TW351839B - Tungsten nitride [WNx] layer manufacturing method and metal wiring manufacturing method using the same - Google Patents
Tungsten nitride [WNx] layer manufacturing method and metal wiring manufacturing method using the sameInfo
- Publication number
- TW351839B TW351839B TW085113959A TW85113959A TW351839B TW 351839 B TW351839 B TW 351839B TW 085113959 A TW085113959 A TW 085113959A TW 85113959 A TW85113959 A TW 85113959A TW 351839 B TW351839 B TW 351839B
- Authority
- TW
- Taiwan
- Prior art keywords
- manufacturing
- layer
- tungsten nitride
- wnx
- same
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 229910052721 tungsten Inorganic materials 0.000 title abstract 3
- 239000010937 tungsten Substances 0.000 title abstract 3
- -1 Tungsten nitride Chemical class 0.000 title abstract 2
- 229910052751 metal Inorganic materials 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 3
- 238000009413 insulation Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950034565A KR0175016B1 (ko) | 1995-10-09 | 1995-10-09 | 선택적 텅스텐 질화 박막 형성방법 및 이를 이용한 금속배선 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW351839B true TW351839B (en) | 1999-02-01 |
Family
ID=19429630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085113959A TW351839B (en) | 1995-10-09 | 1996-11-14 | Tungsten nitride [WNx] layer manufacturing method and metal wiring manufacturing method using the same |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR0175016B1 (ko) |
TW (1) | TW351839B (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980060532A (ko) * | 1996-12-31 | 1998-10-07 | 김영환 | 반도체 소자의 금속 배선 형성 방법 |
KR100428804B1 (ko) | 2001-02-23 | 2004-04-29 | 삼성전자주식회사 | 반도체 제조 공정의 막질 형성 방법, 이를 이용한 트렌치 격리 형성 방법 및 그에 따른 소자 분리 트렌치 격리 구조 |
-
1995
- 1995-10-09 KR KR1019950034565A patent/KR0175016B1/ko not_active IP Right Cessation
-
1996
- 1996-11-14 TW TW085113959A patent/TW351839B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR970023849A (ko) | 1997-05-30 |
KR0175016B1 (ko) | 1999-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |