TW351839B - Tungsten nitride [WNx] layer manufacturing method and metal wiring manufacturing method using the same - Google Patents

Tungsten nitride [WNx] layer manufacturing method and metal wiring manufacturing method using the same

Info

Publication number
TW351839B
TW351839B TW085113959A TW85113959A TW351839B TW 351839 B TW351839 B TW 351839B TW 085113959 A TW085113959 A TW 085113959A TW 85113959 A TW85113959 A TW 85113959A TW 351839 B TW351839 B TW 351839B
Authority
TW
Taiwan
Prior art keywords
manufacturing
layer
tungsten nitride
wnx
same
Prior art date
Application number
TW085113959A
Other languages
English (en)
Chinese (zh)
Inventor
Byung-Lyul Park
Jung-Min Ha
Dae-Hong Ko
Sang-In Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW351839B publication Critical patent/TW351839B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW085113959A 1995-10-09 1996-11-14 Tungsten nitride [WNx] layer manufacturing method and metal wiring manufacturing method using the same TW351839B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950034565A KR0175016B1 (ko) 1995-10-09 1995-10-09 선택적 텅스텐 질화 박막 형성방법 및 이를 이용한 금속배선 방법

Publications (1)

Publication Number Publication Date
TW351839B true TW351839B (en) 1999-02-01

Family

ID=19429630

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085113959A TW351839B (en) 1995-10-09 1996-11-14 Tungsten nitride [WNx] layer manufacturing method and metal wiring manufacturing method using the same

Country Status (2)

Country Link
KR (1) KR0175016B1 (ko)
TW (1) TW351839B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980060532A (ko) * 1996-12-31 1998-10-07 김영환 반도체 소자의 금속 배선 형성 방법
KR100428804B1 (ko) 2001-02-23 2004-04-29 삼성전자주식회사 반도체 제조 공정의 막질 형성 방법, 이를 이용한 트렌치 격리 형성 방법 및 그에 따른 소자 분리 트렌치 격리 구조

Also Published As

Publication number Publication date
KR970023849A (ko) 1997-05-30
KR0175016B1 (ko) 1999-04-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees