TW351812B - Procedures for entry to and exit from a built-in-self-test unit in a semiconductor memory - Google Patents
Procedures for entry to and exit from a built-in-self-test unit in a semiconductor memoryInfo
- Publication number
- TW351812B TW351812B TW086105237A TW86105237A TW351812B TW 351812 B TW351812 B TW 351812B TW 086105237 A TW086105237 A TW 086105237A TW 86105237 A TW86105237 A TW 86105237A TW 351812 B TW351812 B TW 351812B
- Authority
- TW
- Taiwan
- Prior art keywords
- enable signal
- entry
- built
- self
- generating unit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5004—Voltage
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
An entry and exit control circuit employed to execute a built-in-self-test in a semiconductor memory, the control circuit includes: an enable signal generating unit; an overvoltage detecting device linked with the terminal of the semiconductor unit, the said overvoltage detecting device will employ a first signal to the enable signal generating unit in response to the overvoltage on the said terminal, the said first signal and the said enable signal generating unit enter a waiting mode, and when the overvoltage employed on the said terminal changes from the first mode to the second mode, the control signal detecting unit will apply the second signal to the enable signal generator to create enable signal from the enable signal generating unit while in a waiting mode.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1640696P | 1996-04-29 | 1996-04-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW351812B true TW351812B (en) | 1999-02-01 |
Family
ID=21776972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086105237A TW351812B (en) | 1996-04-29 | 1997-04-23 | Procedures for entry to and exit from a built-in-self-test unit in a semiconductor memory |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH1055700A (en) |
KR (1) | KR970071845A (en) |
TW (1) | TW351812B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7005873B2 (en) * | 2002-12-31 | 2006-02-28 | Agere Systems Inc. | Built-in self-test hierarchy for an integrated circuit |
-
1997
- 1997-04-23 TW TW086105237A patent/TW351812B/en active
- 1997-04-28 JP JP9111443A patent/JPH1055700A/en active Pending
- 1997-04-29 KR KR1019970016240A patent/KR970071845A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR970071845A (en) | 1997-11-07 |
JPH1055700A (en) | 1998-02-24 |
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