TW349256B - Process for producing stack capacitor having horizontal finger grooves - Google Patents

Abstract

A process for producing an integrated circuit capacitor, which comprises the following steps: forming a first conductive layer on a semiconductor substrate; forming a composite layer including a BPSG layer and a silicon dioxide layer on the first conductive layer; forming a photoresist pattern on the composite layer; removing the first conductive layer and the composite layer which are not covered by the photoresist; etching the composite layer to etch the BPSG layer in the composite layer with a high selectivity thereby forming a finger structure; forming a second conductive layer on the substrate and the composite layer; forming a spacer on the second conductive layer on the side wall of the composite layer; removing the composite layer; forming a dielectric film on the surface of the first conductive layer and the second conductive layer; and forming a third conductive layer on the dielectric film.