TW345699B - Process for reducing surface dissolution of photoresist - Google Patents

Process for reducing surface dissolution of photoresist

Info

Publication number
TW345699B
TW345699B TW086118428A TW86118428A TW345699B TW 345699 B TW345699 B TW 345699B TW 086118428 A TW086118428 A TW 086118428A TW 86118428 A TW86118428 A TW 86118428A TW 345699 B TW345699 B TW 345699B
Authority
TW
Taiwan
Prior art keywords
photoresist
pattern region
photoresist layer
dissolution
semiconductor substrate
Prior art date
Application number
TW086118428A
Other languages
Chinese (zh)
Inventor
Dong-Yuan Kuanq
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW086118428A priority Critical patent/TW345699B/en
Application granted granted Critical
Publication of TW345699B publication Critical patent/TW345699B/en

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A photoresist treatment process for reducing surface dissolution of a photoresist, the process at least comprising: providing a semiconductor substrate including an un-exposed photoresist layer formed on the semiconductor substrate; forming a dissolution inhibiting layer on the photoresist layer; exposing the semiconductor substrate thereby transferring a pattern defined on a mask to the photoresist layer, the photoresist layer containing a pattern region which is to be retained and a non-pattern region which is to be removed; and developing the photoresist layer thereby removing the non-pattern region and retaining the pattern region, the dissolution inhibiting layer being used to inhibit the dissolution of the pattern region on the photoresist layer during the process of developing, thereby reducing the dissolution of a surface portion of the pattern region.
TW086118428A 1997-12-03 1997-12-03 Process for reducing surface dissolution of photoresist TW345699B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086118428A TW345699B (en) 1997-12-03 1997-12-03 Process for reducing surface dissolution of photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086118428A TW345699B (en) 1997-12-03 1997-12-03 Process for reducing surface dissolution of photoresist

Publications (1)

Publication Number Publication Date
TW345699B true TW345699B (en) 1998-11-21

Family

ID=58263845

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086118428A TW345699B (en) 1997-12-03 1997-12-03 Process for reducing surface dissolution of photoresist

Country Status (1)

Country Link
TW (1) TW345699B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7989146B2 (en) * 2007-10-09 2011-08-02 Eastman Kodak Company Component fabrication using thermal resist materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7989146B2 (en) * 2007-10-09 2011-08-02 Eastman Kodak Company Component fabrication using thermal resist materials

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