TW344101B - High aspect ratio low resistivity lines/vias by surface diffusion - Google Patents
High aspect ratio low resistivity lines/vias by surface diffusionInfo
- Publication number
- TW344101B TW344101B TW084108376A TW84108376A TW344101B TW 344101 B TW344101 B TW 344101B TW 084108376 A TW084108376 A TW 084108376A TW 84108376 A TW84108376 A TW 84108376A TW 344101 B TW344101 B TW 344101B
- Authority
- TW
- Taiwan
- Prior art keywords
- vias
- aspect ratio
- germanium
- high aspect
- low resistivity
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 title 1
- 229910052732 germanium Inorganic materials 0.000 abstract 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 4
- 229910001092 metal group alloy Inorganic materials 0.000 abstract 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
Classifications
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
A metallizaton for interconnecting wiring of devices comprising: a metal alloy for forming at least one of a line and via within a dielectric structure having sidewalls, the metal alloy including a first element selected from the group consisting of aluminum, gold and silver and a second element of germanium, the metal alloy having first regions of germanium in a range of from 0 to 40 at. Percent and a second region of germanium in the range of from 60 to 100 at. Percent, the second region filling up the voids existed in the first regions, in which the second region is formed of an alloy consisting of the first element and germanium; the first regions and the second region forming at least one of the lines and vias.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28660594A | 1994-08-05 | 1994-08-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW344101B true TW344101B (en) | 1998-11-01 |
Family
ID=23099349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084108376A TW344101B (en) | 1994-08-05 | 1995-08-11 | High aspect ratio low resistivity lines/vias by surface diffusion |
Country Status (6)
Country | Link |
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US (4) | US5856026A (en) |
EP (2) | EP0697730B1 (en) |
JP (1) | JP3083735B2 (en) |
KR (1) | KR0177537B1 (en) |
DE (2) | DE69513459T2 (en) |
TW (1) | TW344101B (en) |
Families Citing this family (91)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2141576T5 (en) * | 1994-02-25 | 2006-08-01 | Robert E. Fischell | VASCULAR EXTENSIONER |
DE69513459T2 (en) * | 1994-08-05 | 2000-10-26 | Ibm | Process for the production of an Al-Ge alloy with a WGe polishing stop layer |
US5789317A (en) * | 1996-04-12 | 1998-08-04 | Micron Technology, Inc. | Low temperature reflow method for filling high aspect ratio contacts |
US6429120B1 (en) | 2000-01-18 | 2002-08-06 | Micron Technology, Inc. | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals |
US6309971B1 (en) | 1996-08-01 | 2001-10-30 | Cypress Semiconductor Corporation | Hot metallization process |
US5916453A (en) * | 1996-09-20 | 1999-06-29 | Fujitsu Limited | Methods of planarizing structures on wafers and substrates by polishing |
JP3583562B2 (en) | 1996-10-18 | 2004-11-04 | 株式会社東芝 | Semiconductor device |
KR100221656B1 (en) * | 1996-10-23 | 1999-09-15 | 구본준 | Process for forming interconnector |
US6171957B1 (en) * | 1997-07-16 | 2001-01-09 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing method of semiconductor device having high pressure reflow process |
US6100184A (en) * | 1997-08-20 | 2000-08-08 | Sematech, Inc. | Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer |
US6140228A (en) * | 1997-11-13 | 2000-10-31 | Cypress Semiconductor Corporation | Low temperature metallization process |
US6211073B1 (en) | 1998-02-27 | 2001-04-03 | Micron Technology, Inc. | Methods for making copper and other metal interconnections in integrated circuits |
US6015749A (en) * | 1998-05-04 | 2000-01-18 | Taiwan Semiconductor Manufacturing Company | Method to improve adhesion between copper and titanium nitride, for copper interconnect structures, via the use of an ion implantation procedure |
US6362097B1 (en) * | 1998-07-14 | 2002-03-26 | Applied Komatsu Technlology, Inc. | Collimated sputtering of semiconductor and other films |
KR100265772B1 (en) * | 1998-07-22 | 2000-10-02 | 윤종용 | Wiring structure of semicondcutor device and manufacturing method thereof |
US6287977B1 (en) | 1998-07-31 | 2001-09-11 | Applied Materials, Inc. | Method and apparatus for forming improved metal interconnects |
US6284656B1 (en) | 1998-08-04 | 2001-09-04 | Micron Technology, Inc. | Copper metallurgy in integrated circuits |
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-
1995
- 1995-07-05 DE DE69513459T patent/DE69513459T2/en not_active Expired - Lifetime
- 1995-07-05 EP EP95110478A patent/EP0697730B1/en not_active Expired - Lifetime
- 1995-07-05 EP EP99101825A patent/EP0915501B1/en not_active Expired - Lifetime
- 1995-07-05 DE DE69529775T patent/DE69529775T2/en not_active Expired - Lifetime
- 1995-08-01 JP JP07196745A patent/JP3083735B2/en not_active Expired - Fee Related
- 1995-08-04 KR KR1019950024042A patent/KR0177537B1/en not_active IP Right Cessation
- 1995-08-11 TW TW084108376A patent/TW344101B/en not_active IP Right Cessation
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1996
- 1996-02-20 US US08/603,092 patent/US5856026A/en not_active Expired - Fee Related
- 1996-10-28 US US08/738,883 patent/US5897370A/en not_active Expired - Lifetime
- 1996-10-28 US US08/738,901 patent/US5731245A/en not_active Expired - Fee Related
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1997
- 1997-09-30 US US08/941,062 patent/US5877084A/en not_active Expired - Fee Related
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EP0915501B1 (en) | 2003-02-26 |
US5856026A (en) | 1999-01-05 |
EP0697730A3 (en) | 1996-08-14 |
DE69529775T2 (en) | 2003-10-16 |
KR0177537B1 (en) | 1999-04-15 |
DE69513459D1 (en) | 1999-12-30 |
JP3083735B2 (en) | 2000-09-04 |
DE69513459T2 (en) | 2000-10-26 |
JPH0864599A (en) | 1996-03-08 |
US5897370A (en) | 1999-04-27 |
US5731245A (en) | 1998-03-24 |
US5877084A (en) | 1999-03-02 |
KR960009109A (en) | 1996-03-22 |
EP0915501A1 (en) | 1999-05-12 |
DE69529775D1 (en) | 2003-04-03 |
EP0697730B1 (en) | 1999-11-24 |
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