TW335456B - LCD device - Google Patents

LCD device

Info

Publication number
TW335456B
TW335456B TW085112146A TW85112146A TW335456B TW 335456 B TW335456 B TW 335456B TW 085112146 A TW085112146 A TW 085112146A TW 85112146 A TW85112146 A TW 85112146A TW 335456 B TW335456 B TW 335456B
Authority
TW
Taiwan
Prior art keywords
electrode
contact hole
source
drain
lcd device
Prior art date
Application number
TW085112146A
Other languages
English (en)
Inventor
Tomoko Kitazawa
Tetsuya Iizuka
Takuya Shimano
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW335456B publication Critical patent/TW335456B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
TW085112146A 1995-10-11 1996-10-04 LCD device TW335456B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26301295A JPH09105952A (ja) 1995-10-11 1995-10-11 アクティブマトリクス型液晶表示装置

Publications (1)

Publication Number Publication Date
TW335456B true TW335456B (en) 1998-07-01

Family

ID=17383668

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085112146A TW335456B (en) 1995-10-11 1996-10-04 LCD device

Country Status (4)

Country Link
US (1) US5920082A (zh)
JP (1) JPH09105952A (zh)
KR (1) KR100262227B1 (zh)
TW (1) TW335456B (zh)

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KR100448934B1 (ko) * 1996-12-27 2004-12-04 삼성전자주식회사 액정표시장치의제조방법
JP3191745B2 (ja) * 1997-04-23 2001-07-23 日本電気株式会社 薄膜トランジスタ素子及びその製造方法
US6330047B1 (en) 1997-07-28 2001-12-11 Sharp Kabushiki Kaisha Liquid crystal display device and method for fabricating the same
US6195140B1 (en) 1997-07-28 2001-02-27 Sharp Kabushiki Kaisha Liquid crystal display in which at least one pixel includes both a transmissive region and a reflective region
KR100269520B1 (ko) * 1997-07-29 2000-10-16 구본준 박막트랜지스터, 액정표시장치와 그 제조방법
US6295109B1 (en) * 1997-12-26 2001-09-25 Sharp Kabushiki Kaisha LCD with plurality of pixels having reflective and transmissive regions
KR100590742B1 (ko) 1998-05-11 2007-04-25 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법
US6313481B1 (en) * 1998-08-06 2001-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
US7022556B1 (en) * 1998-11-11 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Exposure device, exposure method and method of manufacturing semiconductor device
KR100469109B1 (ko) * 1998-11-26 2005-02-02 세이코 엡슨 가부시키가이샤 전기 광학 장치 및 그 제조방법 및 전자기기
US6104042A (en) * 1999-06-10 2000-08-15 Chi Mei Optoelectronics Corp. Thin film transistor with a multi-metal structure a method of manufacturing the same
KR100498630B1 (ko) 1999-09-01 2005-07-01 엘지.필립스 엘시디 주식회사 액정표시장치
JP3374911B2 (ja) * 1999-09-30 2003-02-10 日本電気株式会社 透過液晶パネル、画像表示装置、パネル製造方法
KR100611042B1 (ko) * 1999-12-27 2006-08-09 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
KR100583979B1 (ko) 2000-02-11 2006-05-26 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
US6511869B2 (en) * 2000-12-05 2003-01-28 International Business Machines Corporation Thin film transistors with self-aligned transparent pixel electrode
TWI272556B (en) 2002-05-13 2007-02-01 Semiconductor Energy Lab Display device
CN100368904C (zh) * 2003-08-29 2008-02-13 友达光电股份有限公司 薄膜晶体管液晶显示器基板
CN101452893B (zh) * 2003-11-14 2011-04-13 株式会社半导体能源研究所 显示装置及其制造法
JP4287337B2 (ja) * 2003-11-24 2009-07-01 三星モバイルディスプレイ株式會社 有機電界発光表示装置及びその製造方法
KR100684825B1 (ko) * 2003-11-24 2007-02-20 삼성에스디아이 주식회사 유기 전계발광 표시 장치 및 그 제조 방법
JP5117667B2 (ja) * 2005-02-28 2013-01-16 カシオ計算機株式会社 薄膜トランジスタパネル
JP4772395B2 (ja) * 2005-06-24 2011-09-14 三菱電機株式会社 電気光学表示装置およびその製造方法
JP4301227B2 (ja) * 2005-09-15 2009-07-22 セイコーエプソン株式会社 電気光学装置及びその製造方法、電子機器並びにコンデンサー
WO2007108181A1 (ja) 2006-03-15 2007-09-27 Sharp Kabushiki Kaisha アクティブマトリクス基板、表示装置、テレビジョン受像機
JP4297505B2 (ja) * 2006-07-28 2009-07-15 株式会社フューチャービジョン 液晶表示装置
JP4285533B2 (ja) * 2006-12-04 2009-06-24 エプソンイメージングデバイス株式会社 液晶表示装置及びその製造方法
KR100858822B1 (ko) * 2007-05-11 2008-09-17 삼성에스디아이 주식회사 박막 트랜지스터, 이를 포함한 유기 발광 표시장치 및 유기발광 표시장치의 제조방법
TWI349805B (en) * 2007-07-31 2011-10-01 Au Optronics Corp Pixel structures, methods of forming the same and multi domain vertical alignment lcds
TWI373141B (en) * 2007-12-28 2012-09-21 Au Optronics Corp Liquid crystal display unit structure and the manufacturing method thereof
JP2009180981A (ja) * 2008-01-31 2009-08-13 Mitsubishi Electric Corp アクティブマトリックス基板及びその製造方法
JP5182993B2 (ja) * 2008-03-31 2013-04-17 株式会社半導体エネルギー研究所 表示装置及びその作製方法
CN102576174B (zh) * 2009-10-09 2018-02-23 株式会社半导体能源研究所 液晶显示装置及包括该液晶显示装置的电子设备
US9368521B2 (en) 2012-11-30 2016-06-14 Sharp Kabushiki Kaisha TFT substrate
JP6209434B2 (ja) * 2013-12-06 2017-10-04 株式会社ジャパンディスプレイ 配線基板及び表示装置
CN105575978A (zh) * 2016-02-25 2016-05-11 昆山龙腾光电有限公司 薄膜晶体管阵列基板及其制造方法以及液晶显示装置

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JPH03132626A (ja) * 1989-10-18 1991-06-06 Matsushita Electric Ind Co Ltd 半導体装置と半導体装置の製造方法
JP2667304B2 (ja) * 1991-05-13 1997-10-27 シャープ株式会社 アクティブマトリクス基板
EP0603866B1 (en) * 1992-12-25 2002-07-24 Sony Corporation Active matrix substrate
JP2812851B2 (ja) * 1993-03-24 1998-10-22 シャープ株式会社 反射型液晶表示装置
KR0173692B1 (ko) * 1993-10-06 1999-03-20 모리시타 요이찌 박막트랜지스터의 제조방법

Also Published As

Publication number Publication date
KR970022459A (ko) 1997-05-28
JPH09105952A (ja) 1997-04-22
KR100262227B1 (ko) 2000-07-15
US5920082A (en) 1999-07-06

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