TW332343B - Semiconductor device and method for fabricating the same by irradiating single-crystalline Si substrate with Ne atom to achieve a micromachine with uniform thickness and no junction - Google Patents

Semiconductor device and method for fabricating the same by irradiating single-crystalline Si substrate with Ne atom to achieve a micromachine with uniform thickness and no junction

Info

Publication number
TW332343B
TW332343B TW084105113A TW84105113A TW332343B TW 332343 B TW332343 B TW 332343B TW 084105113 A TW084105113 A TW 084105113A TW 84105113 A TW84105113 A TW 84105113A TW 332343 B TW332343 B TW 332343B
Authority
TW
Taiwan
Prior art keywords
crystalline
micromachine
fabricating
substrate
junction
Prior art date
Application number
TW084105113A
Other languages
Chinese (zh)
Inventor
Akihiro Shindou
Daisuke Kosaka
Tetsuo Koekawa
Akira Takata
Sachihiro Ukai
Original Assignee
Kessho Sochi Kk
Kyo Chip Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kessho Sochi Kk, Kyo Chip Kk filed Critical Kessho Sochi Kk
Application granted granted Critical
Publication of TW332343B publication Critical patent/TW332343B/en

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Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Recrystallisation Techniques (AREA)

Abstract

A method for fabricating a micromachine, which comprises a member in which at least one part of it is split from substrate material, includes the following steps: - step 1: forming a sacrifice layer on the substrate material; - step 2: forming a designated material layer for the member upon the sacrifice layer; - step 3: transferring the designated material layer into single-crystalline layer by emission of plurality of low energy air beams toward the designated material layer form the direction of right angle crossing with plurality of most density crystalline side for generating single-crystalline, when or after step 2 is processed and the optimal temperature is formed for crystallizing and the material is not sputting; - step 4: removing the sacrifice layer after step 3.
TW084105113A 1993-11-19 1995-05-19 Semiconductor device and method for fabricating the same by irradiating single-crystalline Si substrate with Ne atom to achieve a micromachine with uniform thickness and no junction TW332343B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP31414793 1993-11-19
JP34132293 1993-12-10
JP34531493 1993-12-20
JP35029793 1993-12-27
JP1550594 1994-02-09

Publications (1)

Publication Number Publication Date
TW332343B true TW332343B (en) 1998-05-21

Family

ID=60628998

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084105113A TW332343B (en) 1993-11-19 1995-05-19 Semiconductor device and method for fabricating the same by irradiating single-crystalline Si substrate with Ne atom to achieve a micromachine with uniform thickness and no junction

Country Status (1)

Country Link
TW (1) TW332343B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI783329B (en) * 2019-12-23 2022-11-11 日商日立全球先端科技股份有限公司 Plasma treatment device
TWI802663B (en) * 2018-03-30 2023-05-21 日商索尼半導體解決方案公司 Semiconductor memory device, multiply-accumulate computing device, and electronic equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI802663B (en) * 2018-03-30 2023-05-21 日商索尼半導體解決方案公司 Semiconductor memory device, multiply-accumulate computing device, and electronic equipment
TWI783329B (en) * 2019-12-23 2022-11-11 日商日立全球先端科技股份有限公司 Plasma treatment device

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