TW329052B - Semiconductor device - Google Patents

Abstract

A semiconductor memory includes a plurality of diffusion layers a plurality of gate electrodes , a plurality of MOS transistors , an interlayer insulating film , and a plurality of metal lines . The diffusion layers are arrayed parallel to each other in the major surface of a semiconductor substrate . The gate electrodes are arrayed parallel to each other on the semiconductor substrate via a gate insulating film in a direction perpendicular to the diffusion layers . The MOS transistors are formed in cross regions including the intersections between the diffusion layers in the major surface of the semiconductor substrate , and the gate electrodes to constitute memory cells . The cross regions include channels through which a channel current flows . Data is written in the memory cells by selectively ion-implanting an impurity in the channels . The interlayer insulating film is formed on the semiconductor substrate including the gate electrodes . The metal lines are formed on the interlayer insulating film in correspondence with the diffusion layers to function as a mask in ion-implanting the impurity .