304256 五、發明説明（） 微尖端卻不能加以分別，因此當-di.微尖端發射大於所流値時,就不能 f別地加以限制它的登封^這種渦度發射的情形,可由某一個微尖端曲率半禅 過小、或局部存在的氣體所引起，特別在此冷陰極系統(cold system)首先啓動 時，更可能發生。因止此技術中近期的技藝都已朝向個別穩定電阻的作法，最 好是每一微尖端都加上單獨的電阻。 圖1說明Borel等人所提出的作法(美國專利4,940,916號），以一個像素的橫剖 面圖來說明。如以上的討論，通往微尖端2的電流是經由陰極線1和閘極線4所供 應，砸县在微尖端的底部和陰極線之間，已***一層高電阻層3，作爲所需的穩定 電阻。這個發明可以使每一微尖端都有自己的穩定電阻，但仍有許多的限制。 電阻層3要作爲穩定電阻，其p阻値需在5X1公分的等級，大大地限制 了可用的材料。此外，橫過一薄膜而持續傳導的電流，比沿著一薄膜傳導的電流 ^斷電。因此以後 更不可靠，因爲前者更容易因局部污染i 的發明都集中發展個別穩莖；1P且丄面且其史15.電適是沿著重阻屢傳導，而不是橫 ---------^------- ------- 過電阻層。304256 V. Description of the invention () The micro-tip cannot be distinguished, so when the -di. Micro-tip emission is greater than the flow value, it can not be limited to its deng sealing ^ This vorticity emission situation can be determined by a certain A microtip whose curvature is too small, or caused by localized gas, is especially likely to occur when the cold cathode system is first started. Since the recent technology in this technology has been towards the practice of individually stabilizing the resistor, it is best to add a separate resistor to each microtip. Figure 1 illustrates the approach proposed by Borel et al. (U.S. Patent No. 4,940,916), illustrated with a cross-sectional view of one pixel. As discussed above, the current to the microtip 2 is supplied via the cathode line 1 and the gate line 4. A high resistance layer 3 has been inserted between the bottom of the microtip and the cathode line as the required stable resistance . This invention allows each microtip to have its own stable resistance, but there are still many limitations. The resistance layer 3 needs to be a stable resistance, and its p-resistance needs to be in the order of 5 × 1 cm, which greatly limits the available materials. In addition, the current continuously conducted across a thin film is de-energized than the current conducted along a thin film. Therefore, it is more unreliable in the future, because the former is more likely to focus on the development of individual stable stems due to the invention of local pollution; 1P and flat and its history 15. The electrical adaption is repeatedly conducted along the heavy resistance, not the horizontal ------ --- ^ ------- ------- Over-resistance layer.
Kane在美國5,142,184號專利中，使用半導體積體電路技術來製作他的冷陰極 顯示器，使每一個別的穩定電阻都以相同的方式作成，並使電阻都位在積體電路 內。圖2以橫剖面圖說明一組三個像素。陰極線203已經沉積在矽基板201上，並經 由擴散電阻2(12連接到微尖端204 »加上閘極206和電子螢光陽極207後，即完成基 礎的設計。這種作法可以^[合;p流著電阻非橫過電阻層傳導的要求，但 須要多加-的步驟，使整個系統的造價更高。此外，擴散電阻也需 要佔用一定量的空間 圖3說明Mever在美國中的作法。這尋二個Φ面圖.，其中陰極 一部份不再作成連續的Mrii層，而是作成由線15與線16交叉形成的網層 (mesh)。電阻層17即夾在網層與基板（未畫出）之間。在電阻層上已經形成微尖 本纸張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） A7 A7 經 濟 部 中 標 準 Μ 員 消 费 合 社 印 製 B7 五、發明説明（ 端，位於網層的空隙中。有一閘極線與陰極線/網相交，而且由網層流出的電流 必須先沿著電阻層7流過，才能到達微尖端。這種作法的一個重要缺失是，網層限 制了顯示器的解板度J以下說明了本案發胆後二知道確實有更簡易的方 法可以作成所需的設計，而不需犧牲解析度。它的另一個缺失是，S由於這種設計 的特殊形狀，不同微尖端的穩定電阻阻値變化很大。 發明的簡要說明 本發明的一個目的是提出一種冷陰極場發射顯示器，其每二個場發射微尖端 個別的穩定電阻。 本多lg_—個目的是，所揋出個別的穩宙雷阳不會隆低顯示器的魅抵度。 本發明另一個且的是使這種個別的穩定重胆既強12又IT靠。 本發明另一個目的是提岀一種顯示器的製法，可用最低的成本達成以上的目 的 要達到這些目的，可在_線1 基板間夾入-i層電阻層，1使陰極-閘極線 交叉處(即各微尖端的位置)的開口具有二特-定的形狀，使摄由風極線流至微尖端 的電流，必須沿著電阻層流過一段距離，才能到達微尖端。 附圖的簡要說明 圖1至圖3說明習知技藝所提出的設計，顯示器中各像素都具有個別的穩定電 圖4是根據本發明所設計的像素的橫剖面圖。 圖5和圖6說明製作本發明之冷陰極場發射顯示器的步驟 發明的詳細說明 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐）In the US Patent No. 5,142,184, Kane uses semiconductor integrated circuit technology to make his cold cathode display, so that each individual stable resistance is made in the same way, and the resistance is located in the integrated circuit. Figure 2 illustrates a set of three pixels in a cross-sectional view. The cathode line 203 has been deposited on the silicon substrate 201, and is connected to the microtip 204 via the diffusion resistor 2 (12). After adding the gate 206 and the electronic fluorescent anode 207, the basic design is completed. This approach can be ^ [合; p flow resistance is not required to conduct across the resistance layer, but requires additional steps to make the entire system more expensive. In addition, the diffusion resistance also needs to occupy a certain amount of space. Figure 3 illustrates Mever's practice in the United States. This Find two Φ planes. Among them, a part of the cathode is no longer a continuous Mrii layer, but a mesh layer formed by crossing lines 15 and 16. The resistance layer 17 is sandwiched between the mesh layer and the substrate ( Not shown). The micro-pointed paper scale has been formed on the resistance layer. It is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm). A7 A7 Standard of the Ministry of Economic Affairs. Printed by the member consumer cooperative. B7. Description of the invention (End, located in the gap of the mesh layer. A gate line intersects the cathode line / mesh, and the current flowing from the mesh layer must first flow along the resistance layer 7 before reaching the microtip. An important aspect of this approach is Missing is that the network layer limit The resolution of the display is made J. The following shows that after this case, the second case knows that there is indeed an easier way to make the desired design without sacrificing resolution. Another lack of it is that S due to this design The special shape of the different microtips varies greatly in resistance resistance. Brief description of the invention An object of the present invention is to propose a cold cathode field emission display which emits individual stable resistances of the microtips every two field emission points. -One purpose is that the individual stability of Leiyang will not lower the charm of the display. Another aspect of the present invention is to make such individual stability both strong and IT dependable. Another aspect of the invention The purpose is to mention a method of manufacturing a display. The above goals can be achieved at the lowest cost. To achieve these goals, a -i resistance layer can be interposed between the _line 1 substrates, 1 where the cathode-gate lines cross (i.e. The position of the tip) has a two-specific shape, so that the current flowing from the wind pole line to the microtip must flow through the resistance layer for a distance to reach the microtip. Brief description of the drawings image 3 According to the design proposed by the conventional technology, each pixel in the display has an individual stable electrical diagram. FIG. 4 is a cross-sectional view of the pixel designed according to the present invention. FIGS. 5 and 6 illustrate the fabrication of the cold cathode field emission display of the present invention. Step-by-step detailed description of the invention This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X 297mm)
A7 B7 五、發明説明（ 圖4中以一個尖端細胞的橫剖面圖，說明本發明的主要特徵。在絕緣基板20上 0^' . T*? ---------- 丨I . ------------------------------ .. ------------------------------------ ---------it- 彷;積電阻層21，在其上再沉積陰極線22。P極猙丰要長度昀所在方向，都與附圖 的平面呈垂直。閘極線2/在陰極線22以上，彼此以介電層23隔開。閱極與陰極線 都可用以下的金屬作成：鉬、鈮、鋁、.鈦或絡等；而介電f可用標準6勺介f材料 作成，如氧化矽、氧化鋁、氧化欽或氮化砂等。 圓錐形的微尖端25，位在閘極線24與陰極線22交叉處的中心。所述圓錐體的 底部位在電阻層，而且由此向上延展，使頂端與閘極線24齊平。閘極線24上 _m. _______. _______—.........·，-'―~~— 有一開口31，並向下沿伸一直到電阻層21的上表面。電阻層21的面電阻通常在103 * ........................--------------------------------------------— — .................... · --- 到1〇9歐姆/平方公分之間，而其厚度通常在500到10000埃之間，所用的材料可以 是一般薄膜電阻所用的材料，如鎳-鉻合金、鉻、鉻-一氧化矽合金、氧化錫、 氧化銦、濺鍍矽或非晶矽等。 本發明的一個關鍵性特徵是，聞Π”的盲麽产罩阴暦？丨附沂，hh靠折閫@媳 24的表面鏖霎去得多。一般來說，陰極線附沂的開口半禅，與介電層附近開口半 徑的比率，是2比1到50比：1。使$面附沂的開口保持相當小，就不致失去使電子加 速通過閘衝往螢光陽極(未畫出）的能力。而使電阻層21附近的開口相當 大，由陰極線22流往微尖端25的電流，就被迫要沿著電阻層21流過。因此，這樣 的設計可以達成使各微尖端具有自己的穩定電阻的目的，示 >w.' 經濟部中央標準局員工消费合作社印製 以下將說明製作本發明之冷陰極顯示器的製程。圖5的橫剖面圖中4在絕緣基 板20上有三條陰極線》這三條陰極線主要長度的所在方向，都與附圖的平面呈垂 直。只有中間的那一條完全畫出，兩側其餘的二條在圖邊緣處的部份都被截去。 陰極線之間由間隔26隔開，使它們彼此電性隔離。 圖6說明製程的下一步。圖5中的結構已經塗佈介電層23，然後形成閘極線 24。須注意，閘極線的材料應與陰極線的材料不同，例如閘極可以用鉬作成，而 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） A7 B7 五、發明説明（） 陰極線用鋁作成。閘極線和介電層23上已用蝕刻形成開口32，蝕刻時可浸於緩衝 氫氟酸2至10分鐘，所形成的開口一直延伸到陰極線22的平面》 接下來的關鍵步驟是，使甩丕同於先前遐逾>，繼續進行形 成開口的製程。在現在的例子中二可選里王侵勉重阻層閘極線層24或介電層 23，但侵蝕陰極線層22的氫氯酸。這個選擇性蝕刻的步驟，使開口在陰極線所在 的平面處持續典加大這樣的歩驟爲「i§度飽刻」（over etching)，可以改變圖姓開口的橫截面外型。 以前面t述的製程來塑造開口的形狀，可以得到一層環狀的電阻，夾在閘極 經濟部中央標隼局員工消費合作社印製A7 B7 V. Description of the invention (In FIG. 4, a cross-sectional view of a pointed cell illustrates the main features of the present invention. On the insulating substrate 20 0 ^ '. T *? ---------- 丨 I . ------------------------------ .. ----------------- ------------------- --------- it- Imitate; build-up resistance layer 21, and then deposit the cathode wire 22 on it. P 极 絰 丰 要The direction of the length is perpendicular to the plane of the drawing. The gate line 2 is above the cathode line 22 and separated from each other by a dielectric layer 23. The reading electrode and the cathode line can be made of the following metals: molybdenum, niobium, aluminum, .Titanium or complex; and the dielectric f can be made of standard 6 spoons of dielectric f material, such as silicon oxide, aluminum oxide, oxide oxide or nitride sand. Conical microtip 25, located in the gate line 24 and the cathode line 22 The center of the intersection. The bottom of the cone is located in the resistance layer, and thus extends upwards so that the top is flush with the gate line 24. On the gate line 24 _m. _______. _______—...... ... ·,-'~~~ — has an opening 31 and extends downwards all the way to the upper surface of the resistance layer 21. The surface resistance of the resistance layer 21 is usually 103 * ............ ............----------- ----------------------------------- ............... ..... --- to 1009 ohms / cm2, and its thickness is usually between 500 and 10000 angstroms. The material used can be the material used for general thin film resistors, such as nickel-chromium alloy, Chromium, chromium-silicon monoxide alloy, tin oxide, indium oxide, sputtered silicon or amorphous silicon, etc. A key feature of the present invention is that the blindness of the blunt birth mask is murky? 丨 Fuyi, hh depends on折 阃 @ 婆 24's surface is far away. In general, the ratio of the opening of the cathode line to Yiyi is half-zen, and the radius of the opening near the dielectric layer is 2 to 1 to 50: 1. Make $ 面 附 沂Keep the opening of the electrode relatively small, so as not to lose the ability to accelerate electrons through the gate toward the fluorescent anode (not shown). The opening near the resistance layer 21 is quite large, and the current flowing from the cathode wire 22 to the microtip 25 is It is forced to flow along the resistance layer 21. Therefore, this design can achieve the purpose of making each microtip have its own stable resistance, shown > w. 'Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs The cold shade of the present invention The manufacturing process of the display. In the cross-sectional view of FIG. 5, there are three cathode lines on the insulating substrate 20. The directions of the main lengths of the three cathode lines are all perpendicular to the plane of the drawing. Only the middle one is completely drawn, both sides The remaining two lines are cut off at the edge of the figure. The cathode lines are separated by a space 26 to electrically isolate them from each other. Figure 6 illustrates the next step in the process. The structure in FIG. 5 has been coated with the dielectric layer 23, and then the gate line 24 is formed. It should be noted that the material of the gate wire should be different from the material of the cathode wire. For example, the gate electrode can be made of molybdenum, and this paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) A7 B7 V. Description of invention () The cathode wire is made of aluminum. The gate line and the dielectric layer 23 have been etched to form an opening 32. The etching can be immersed in buffered hydrofluoric acid for 2 to 10 minutes. The formed opening extends to the plane of the cathode line 22. The next key step is to make Leaving Pi is the same as the previous yao>, continue the process of forming openings. In the present example, the second option is that the gate line layer 24 or the dielectric layer 23 of the heavy barrier layer is invaded, but the hydrochloric acid of the cathode line layer 22 is eroded. This selective etching step causes the opening to continue to increase at the plane where the cathode line is located. This step is "over etching", which can change the cross-sectional appearance of the opening of the surname. Using the process described above to shape the opening, a layer of ring-shaped resistance can be obtained, which is sandwiched by the gate and printed by the Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs.
本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐） A7 A7 經 濟 部 中 央 標 準 員 消 费 合 h 社 印 製 B7 五、發明説明（ 發明背景 (1)發明領域 本發明係關於冷陰極場發射顯示器 (2)習知技藝 冷陰極場發射元件的甚礎甚射的現即所用材料表面如果有足夠 ;夭的局部電_，即使此材料係在室溫下，也可將電承發射至眞空環境。而要產生 這種夭_場，如里定須要施加很高的電 罢導體aMamMUf進，使辑發展產這種類型的冷陰^^矩陣 滅爲可能。彦太逢1雌形下，冷陰極場發射顯示器包含一假由許冬微小的圓錐 遐發射器組成的軍渾，@中盘二個發射器都經由陰橄導媪連榇到售雷壓μ·另有 一組g線_(稱爲閩gaiai連接於正電壓源，位在陰極導線上方距離很近的地方， 與陰極導線彼此呈二個角度ί通當是90° )器或徵尖端所在的位 環想玄叉。夠大，使某一微尖端的冷陰極發射前，必需先驅動 (activate)相關的陰極導線與閘極導線。 冷陰極所發射的電子通過閘極導線上的開口，再撞擊與閛極導線相距不遠的 .螢光面板，通f每個像孝內有數十個至數百個尖端。一般而言，即使微尖端尾圍 附近的局部電壓超過1G6伏特/公分，外加的電壓不過是10G伏特的等級，然而即 使是這種數量級的低電壓」一旦短路，很明顯地也足以弓丨至很嚴重果。 #11^·期的習知使^用&加的電阻，放在gli或源丨§應 器(power str^y)之間，作爲穩定(ballast)之用τ起裹麗悉器虫某處發生短路， _______—一 ~............— ^限tn雪流。這種作@以保護電源供應器，對特定陰極或閘極線上個別的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）This paper scale is applicable to the Chinese National Standard (CNS) Λ4 specification (210X297mm) A7 A7 Printed by the Central Standards Department of the Ministry of Economic Affairs, B7. Description of the invention (Background of the invention (1) Field of the invention The present invention relates to cold cathode field Emission display (2) Known technology Cold cathode field emission element is very basic, if the surface of the material currently used is sufficient; the local electric charge is low, even if this material is at room temperature, the electric carrier can be emitted to The empty environment. To produce such a field, for example, it is necessary to apply a high electric strike conductor aMamMUf to make it possible to produce this type of cold shadow ^^ matrix. Yan Taifeng 1 female form, The cold cathode field emission display contains a fake army consisting of Xu Dong ’s tiny cone-shaped emitter. Both mid-launch transmitters are connected to the thunder pressure through the Yin olive. There is another set of g-line _ ( It is called Mingaiai and is connected to a positive voltage source and is located very close to the cathode lead. It is at two angles to the cathode lead and is at 90 °.) The bit ring where the device or sign tip is located is large enough. , Making a micro-tip cold cathode Before firing, the relevant cathode wire and gate wire must be activated. The electrons emitted by the cold cathode pass through the opening in the gate wire, and then hit the fluorescent panel that is not far away from the gate electrode wire. There are dozens to hundreds of tips in this image. Generally speaking, even if the local voltage near the tail of the microtip exceeds 1G6 volts / cm, the applied voltage is only 10G volts, but even this order of magnitude Once the "low voltage" is short-circuited, it is obviously enough to achieve a very serious result. # 11 ^ · The conventional knowledge uses the resistance added by & put it in the gli or source 丨 § device (power str ^ y) Between, as a stabilization (ballast), there is a short circuit somewhere in the body of the insect pest, _______— 一 ~ ............ ^ Limit tn snow flow. This kind of action @ 以Protect the power supply, and apply the Chinese National Standard (CNS) A4 specification (210X297mm) to the specific paper size of the specific cathode or gate line