TW301062B

TW301062B - A Schottky structure and its manufacturing method

Info

Publication number: TW301062B
Application number: TW85107822A
Authority: TW
Inventors: Lian-Bih Jang; Horng-Tzong Wang
Original assignee: Nat Science Council
Priority date: 1996-06-28
Filing date: 1996-06-28
Publication date: 1997-03-21

Abstract

A Schottky structure includes: - a substrate; - the first expitaxy layer over the substrate which uses low-dopant rare earth element; and - a metal layer over the first expitaxy layer. the first expitaxy layer is used for increasing the reverse bias anddecreasing the reverse leakage current.

Description

A 7 Β· 五、發明説明（1 ) 本案係關於一種蕭基結構之製程與結構，尤指一種形成具耐髙反偏壓與低漏電流特性之蕭基結構之製程與結構具髙耐反向偏壓與低逆向漏電流ΙΠ-ν族化合物之蕭基 (Schottky)結構，進年來持續、稹極地被硏究著，主要是因爲此等蕭基結構具有能隙較髙、快速載子移動速率等特性，故常被工業界採用，例如，將蕭基結構應用於二極體之製造，即可形成蕭基二極體（Schottky diode)，而如應用於電晶體中時，即可製造出應用於髙速通訊領域之砷化鎵電晶體等等，是以，如何進一步改善目前蕭基結構之特性，即成爲吾人所關心之焦點。、-··* 申言之，請參閱第一圖，其係爲習知蕭基結構之結構示意圖，於圖一中係包括：一基板1(例如*爲一具高度摻雜之η型基板）、一磊晶（expitaxy)層2(例如，爲一 η 型磊晶層）以及一金屬層3 ;又，於該磊晶層2與該金屬層3 之表面交接處S則形成一蕭基位障，而該蕭基位障之大小係與該磊晶層2表面21處之表面狀態（surface state)、表面氧化現象與該磊晶層2之背景雜質濃度或缺陷等因素具有極爲密切之關係，易言之，上述因素將形成一蕭基位障 Pinnning 現象。經濟部中央標準局員工消費合作社印取所謂蕭基位障Pinnning現象，即係指蕭基位障無法超過某些特定値，例如，對以砷化鎵（GaAs)所磊晶成長之蕭基結構而言，其蕭基位障之大小乃位於Q.8eV附近，而此對於欲將蕭基結構應用於具更髙速度之要求之領域時，顯將造成極大之問題；再則，蕭基結構之反向偏壓本紙中裡囷家標隼（rNS 1 Λ4現今i 2:，.5、W:.·、.?? ΑΊ ___Β7 五、發明説明（2 ) (reverse bias)之大小係決定於該磊晶層2之背景雜質濃度髙低，而反向漏電流（reverse leakage curirent) 又係決定於上述因素條件之總合，亦即，如能適當地降低表面狀態或該磊晶層2之背景雜質濃度，則顯可提髙蕭基位障與反向偏壓且降低反向漏電流，本案即爲一可達到此一目的之作。本案之主要目的，即係在於提供一種可提髙蕭基位障與反向偏壓且降低反向漏電流之蕭基結構。本案之另一目的，即係在於提供一種可提高蕭基位障與反向偏壓且降低反向漏電流之蕭基結構製程。本案係關於一種蕭基（Schottky)結構，其包括：一基板；一第一裔晶（expitaxy)層，分佈於該基板上方，該第一慕晶層係爲一具稀土元素（rare earth element) 之低雜質（dopant)磊晶層；以及一金靥層，分佈於該第一磊晶層上方；藉由該第一磊晶層，俾可提髙蕭基位障與反向偏壓（reverse bias)，且降低反向漏電流 (reverse leakage current)。依據上述之構想，其中該基板係爲一具高摻雜雜質之 η型基板。經濟部中央標準局工消費合作杜印製依據上述之構想，其中該具稀土元素之低雜質第一磊晶層，係爲一具稀土元素之砷化鎵（GaAs)磊晶層。依據上述之構想，其中該具稀土元素之低雜質第一磊晶層，係爲一具稀土元素之磷化銦（InP)磊晶層。A 7 Β · Fifth, the description of the invention (1) This case relates to a process and structure of a Schottky structure, especially a process and structure of forming a Schottky structure with high reverse bias resistance and low leakage current characteristics. The Schottky structure of the ΠΠ-ν family of compounds with directional bias and low reverse leakage current has been continuous and studied in recent years, mainly because of the high energy gap and fast carrier movement of these Schottky structures. The characteristics such as speed are often adopted by the industry. For example, the Schottky diode can be formed by applying the Schottky structure to the manufacture of diodes, and when applied to transistors, it can be manufactured. The gallium arsenide transistor used in the field of high-speed communication, etc., is how to further improve the characteristics of the current Xiaoji structure, which has become the focus of my concern. ,-· ** Please refer to the first figure, which is a schematic diagram of the conventional Xiaoji structure. In figure 1, it includes: a substrate 1 (for example, * is a highly doped n-type substrate ), An epitaxial (expitaxy) layer 2 (for example, an n-type epitaxial layer) and a metal layer 3; and, at the junction of the surface of the epitaxial layer 2 and the metal layer 3, S forms a dilute base Barriers, and the size of the Schottky barriers is closely related to the surface state of the epitaxial layer 2 surface 21, surface oxidation, and background impurity concentration or defects of the epitaxial layer 2 Relationship, in other words, the above factors will form a Schwann barrier Pinnning phenomenon. Employee consumer cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs have printed the so-called Schottky barrier Pinnning phenomenon, which means that the Schottky barrier cannot exceed certain specific values, for example, for the Schwarz structure grown by epitaxial growth with GaAs In particular, the size of the Schottky barrier is located near Q.8eV, and this will obviously cause great problems when applying the Schottky structure to areas with higher speed requirements; The reverse biased paper in the Lijia family standard falcon (rNS 1 Λ4 now i 2 :, .5, W: ..,. ?? ΑΊ ___ Β7 V. Invention description (2) (reverse bias) The size is determined by The background impurity concentration of the epitaxial layer 2 is low, and the reverse leakage curirent is determined by the sum of the above factors, that is, if the surface state or the epitaxial layer 2 can be appropriately reduced The concentration of background impurities can obviously improve the barrier base and reverse bias voltage and reduce the reverse leakage current. This case is one that can achieve this purpose. The main purpose of this case is to provide a high Schottky barrier and Schottky junction with reverse bias and reduced reverse leakage current Another objective of this case is to provide a Schottky structure process that can increase the Schottky barrier and reverse bias and reduce reverse leakage current. This case relates to a Schottky structure, which includes: A substrate; a first expitaxy layer, distributed above the substrate, the first mujing layer is a low-dopant epitaxial layer with rare earth elements; and a gold plume Layer, distributed above the first epitaxial layer; with the first epitaxial layer, it is possible to raise the Xiao-based barrier and reverse bias and reduce the reverse leakage current According to the above concept, the substrate is an n-type substrate with highly doped impurities. The Central Standards Bureau of the Ministry of Economic Affairs and Industry Co., Ltd. Du Printing Co., Ltd. according to the above concept, where the low impurity first epitaxial with rare earth elements The layer is a gallium arsenide (GaAs) epitaxial layer with rare earth elements. According to the above concept, the low-impurity first epitaxial layer with rare earth elements is an indium phosphide (InP) with rare earth elements ) Epitaxial layer.

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Ν') C A 7 B7 五、發明説明（3 依據上述之構想，其中該具稀土元素之低雜質第一磊晶層，係爲一具低摻雜雜質之η型磊晶層。依據上述之構想，其中該具稀土元素之低雜質η型磊晶層，係可爲一具鐯（Pr)元素之低雜質η型磊晶層。依據上述之構想，其中該具稀土元素之低雜質η型磊晶層，係可爲一具鏟（Yb)元素之低雜質η型磊晶層。依據上述之構想’其中該具稀土元素之低雜質η型磊晶層，係可爲一具稀土元素氧化物之低雜質η型磊晶層。依據上述之構想，其中該具稀土元素氧化物之低雜質 η型磊晶層，係可爲一具三氧化二鐯（pr2〇3)之低雜質η 型磊晶層。依據上述之構想，其中該基板係爲一具高摻雜雜質之 Ρ型基板。依據上述之構想’其中該具稀土元素之低雜質第一磊晶層，係爲一具低摻雜雜質之ρ型磊晶層。依據上述之構想，其中該具稀土元素之低雜質第一磊晶層’其稀土元素或稀土元素氧化物之重量百分比係可小於10_4 。依據上述之構想，其中該金屬層係可爲一鎳（Ni)、金 (Au)、銀（Ag)、銘（A1)、欽（Ti)、t3(Pd)或齡（Pt)金靥層。依據上述之構想，其中該蕭基結構更可包括：一第二磊晶層，其係分佈於該第一磊晶層與該金靥層之間，該第二磊晶層係與該第一磊晶層具相反型別（type)之雜質。 4 五、發明説明（4 A7 B7 依據上述之構想，其中於該基板係爲一具髙摻雜雜質之η型基板、該具稀土元素之低雜質第一磊晶層係爲一具低摻雜雜質之η型磊晶層時，該第二磊晶層係爲一厚度極薄之Ρ型慕晶層。依據上述之構想，其中於該基板係爲一具髙摻雜雜質之Ρ型基板、該具稀土元素之低雜質第一磊晶層係爲一具低摻雜雜質之Ρ型磊晶層時，該第二磊晶層係爲一厚度極薄之η型幕晶層。依據上述之構想，其中該第二磊晶層之厚度係可爲100 背 \1: 再 Jl 装經濟部中央標準局員工消f合作社印裂依據上述之構想，其中該蕭基結構係可使用於二極體中，以作爲一蕭基二極體。依據上述之構想，其中該蕭基結構係可使用於砷化鎵電晶體中。本案亦係關於一種形成蕭基（Schottky)結構之製程，其步驟包括：a)形成一具低雜質（dopant)之第一磊晶（expitaxy)層於一基板上方；其中，該第一磊晶層摻雜具稀土元素（rare earth element)之雜質 (dopant);以及b)形成一金屬層於該第一磊晶層上方；藉由於步驟（a)中所形成之該第一磊晶層，俾可提髙蕭基位障與反向偏壓（reverse bias)，且降低反向漏電流 (reverse leakage current)。訂 3u1〇〇2 A7 B7 五、發明説明（5 ) 經濟部中央標準局員工消費合作社印" 依據上述之構想，其中於該步驟（a )中形成該第一幕晶層之方法係可以液相磊晶沈積法（liquid phase epitaxy，LPE)爲之》依據上述之構想，其中於該步驟（a)中更可包括下列步驟：a 1 )加入該具稀土元素之雜質於一溶劑中；3 2) 加入一溶質於該溶劑中；以及a 3)提供一生長試片並配合該溶劑，俾以成長出該第一磊晶層。依據上述之構想，其中於該步驟（a 1 )中該稀土元素其重量百分比係可小於1 (Γ 4。其中於該步驟（a 1)中該稀土元素其重量百分比係可小於1〇_4。其中於該步驟（a 1)中該稀土元素係可爲一三氧化二鐯（Pr203)之稀土元素氧化物，其重量百分比係可小於1 (Γ4 〇依據上述之構想，其中於該步驟（a 2)之前更可包括步驟：a 1 1 )將該具稀土元素氧化物之溶劑，進行一烘烤與降溫冷卻。依據上述之構想，其中於該步驟（a 1 1 )中，烘烤溫度係可爲9 0 0 °C，烘烤時間則係可爲1 2小時。依據上述之構想，其中於該步驟（a 1 1 )中，降溫速率係可爲1°C/ min，並至780 °C爲止，之後並直接冷卻至室溫溫度。係可爲一鐯（Pr)元素依據上述之構想係可爲一鏡（Yb)元素依據上述之構想Wooden paper guilt scale $ China National Standard Falcon (('\ S):. Ν') CA 7 B7 5. Description of the invention (3 According to the above concept, the low-impurity first epitaxial layer with rare earth elements, is It is an n-type epitaxial layer with low doping impurities. According to the above concept, the low-impurity n-type epitaxial layer with rare earth elements can be a low-impurity n-type epitaxial layer with Pr elements According to the above concept, the low-impurity n-type epitaxial layer with rare earth elements can be a low-impurity n-type epitaxial layer with shovel (Yb) elements. According to the above-mentioned concept, wherein the rare earth elements The low-impurity n-type epitaxial layer can be a low-impurity n-type epitaxial layer with a rare-earth element oxide. According to the above concept, the low-impurity n-type epitaxial layer with a rare-earth element oxide can be It is a low-impurity n-type epitaxial layer with cerium oxide (pr2〇3). According to the above concept, wherein the substrate is a p-type substrate with highly doped impurities. According to the above concept ' The rare-earth element low-impurity first epitaxial layer is a p-type epitaxial with low-doped impurities According to the above concept, the weight percentage of rare earth element or rare earth element oxide of the first low-impurity first epitaxial layer with rare earth element may be less than 10_4. According to the above concept, the metal layer may be a Nickel (Ni), gold (Au), silver (Ag), Ming (A1), Qin (Ti), t3 (Pd) or age (Pt) gold layer. According to the above concept, the Shaw-based structure is more acceptable The method includes: a second epitaxial layer, which is distributed between the first epitaxial layer and the gold layer, the second epitaxial layer and the first epitaxial layer have opposite types of impurities 4. V. Description of the invention (4 A7 B7 According to the above concept, wherein the substrate is an n-type substrate with high doped impurities, the low-impurity first epitaxial layer with rare earth elements is a low-doped In the case of an n-type epitaxial layer of doped impurities, the second epitaxial layer is a p-type eutectic layer with a very thin thickness. According to the above concept, the substrate is a p-type substrate with high impurity doping 2. When the low-impurity first epitaxial layer with rare-earth elements is a p-type epitaxial layer with low-doped impurities, the second epitaxial layer The layer system is an n-type curtain crystal layer with a very thin thickness. According to the above concept, the thickness of the second epitaxial layer can be 100 Å \ 1: Then the equipment is printed by the employees of the Central Standards Bureau of the Ministry of Economic Affairs. According to the above concept, the Schottky structure can be used in a diode as a Schottky diode. According to the above concept, the Schottky structure can be used in a gallium arsenide transistor. It also relates to a process for forming a Schottky structure. The steps include: a) forming a low-dopant first epitaxial layer on a substrate; wherein, the first epitaxial layer Doping dopant with rare earth elements; and b) forming a metal layer above the first epitaxial layer; by the first epitaxial layer formed in step (a), to It can improve the Xiaoji barrier and reverse bias (reverse bias), and reduce the reverse leakage current (reverse leakage current). Order 3u1〇2 A7 B7 V. Description of the invention (5) Printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs " Based on the above concept, in which the method of forming the first act crystal layer in step (a) can be liquid The phase epitaxy method (liquid phase epitaxy, LPE) is based on the above concept, wherein the step (a) may further include the following steps: a 1) adding the impurities with rare earth elements in a solvent; 3 2) Add a solute to the solvent; and a 3) Provide a growth test piece and cooperate with the solvent to grow the first epitaxial layer. According to the above conception, wherein the weight percentage of the rare earth element in the step (a 1) may be less than 1 (Γ 4. Wherein the weight percentage of the rare earth element in the step (a 1) may be less than 1_4 In this step (a 1), the rare earth element may be a rare earth element oxide of Pr 203 (Pr203), and its weight percentage may be less than 1 (Γ4 〇 According to the above concept, in this step ( a 2) Before the step may further include: a 1 1) The solvent with rare earth element oxide is subjected to a baking and cooling cooling. According to the above concept, in this step (a 1 1), the baking temperature It can be 900 ° C, and the baking time can be 12 hours. According to the above concept, in this step (a 1 1), the cooling rate can be 1 ° C / min, and to 780 ° C, and then directly cooled to room temperature. It can be a Pr (Pr) element according to the above concept or a mirror (Yb) element according to the above concept

Hr k 再裴Hr k Zai Bae

五、發明説明（6 ) 依據上述之構想，其中於該步驟（a 2)中該溶質係可爲一砷化鎵（GaAs)溶質，而該溶劑則係可爲一鎵（Ga)溶劑。依據上述之構想，其中該砷化鎵（GaAs)溶質係可爲一多晶或非晶（amorphous)溶質》装— 2·-·'·: 依據上述之構想，其中於該步驟（a 2)中該溶質係可爲一磷化銦（InP)溶質，而該溶劑則係可爲一銦（In)溶劑。依據上述之構想，其中於該步驟（a 3)中需進行加熱至磊晶生長之過飽和溫度，之後並予以降溫。依據上述之構想，其中於該步驟（a 3)中該生長試片係可爲一具高摻雜雜質之n型基板，而該具稀土元素之低雜質第一磊晶層則係爲一具低摻雜雜質之η型磊晶層。依據上述之構想’其中於該步驟（a 3)中該生長試片係可爲一具髙摻雜雜質之p型基板，而該具稀土元素之低雜質第一磊晶層則係爲一具低摻雜雜質之p型磊晶層。依據上述之構想，其中於該步驟（a 1 )中該溶劑係置於—坦渦（crucible)中。經濟部中央標隼局員工消費合作社印袈依據上述之構想’其中該坩堝係可爲一含硼、氮（B、N) 元素之高溫材料（refractory)。依據上述之構想，其中該坩堝係可爲一石墨坩堝，該石墨坩堝具一石墨蓋，其係爲含碳元素之高溫材料 (refractory)。 B' 五、發明説明（7 ) 依據上述之構想，其中於該步驟（a 3)中該生長試片與該溶劑皆置於該具石墨蓋之石墨坩堝中，以於該第一磊晶層之表面處反轉（invert)得致一第二磊晶層。依據上述之構想，其中於該步驟（a 3)中該生長試片係可爲一具髙摻雜雜質之η型基板，該具稀土元素之低雜質第一磊晶層係爲一具低摻雜雜質之η型磊晶層，而該第二磊晶層則係爲一厚度極薄之ρ型磊晶層。依據上述之構想，其中於該步驟（a 3)中該生長試片係可爲一具髙摻雜雜質之ρ型基板，該具稀土元素之低雜質第一磊晶層係爲一具低摻雜雜質之ρ型磊晶層，而該第二磊晶層則係爲一厚度極薄之η型磊晶層。依據上述之構想，其中該第二磊晶層之厚度係可爲100 Α 〇依據上述之構想，其中於該步驟（a )中形成該第一磊晶層之方法係可以金屬有機化學汽相沈積法爲之（metal organic chemical vapor deposition > MOCVD) 爲之。5. Description of the invention (6) According to the above concept, in this step (a 2), the solute may be a gallium arsenide (GaAs) solute, and the solvent may be a gallium (Ga) solvent. According to the above concept, the GaAs solute system can be a polycrystalline or amorphous solute. "Package-2 ·-· '·: According to the above concept, in the step (a 2) The solute system may be an indium phosphide (InP) solute, and the solvent may be an indium (In) solvent. According to the above concept, in this step (a 3), heating to the supersaturation temperature of epitaxial growth is required, and then the temperature is lowered. According to the above concept, in this step (a 3), the growth test piece may be an n-type substrate with highly doped impurities, and the low impurity first epitaxial layer with rare earth elements is a An n-type epitaxial layer with low doping impurities. According to the above concept, wherein in the step (a 3), the growth test piece may be a p-type substrate with high impurity doping, and the low-impurity first epitaxial layer with rare earth element is a P-type epitaxial layer with low doping impurities. According to the above conception, in this step (a 1), the solvent is placed in a crucible. According to the above-mentioned idea, the Central Consumer Bureau of the Ministry of Economic Affairs and Staff Consumer Cooperatives' Indices ”The crucible can be a high-temperature material (refractory) containing boron and nitrogen (B, N) elements. According to the above conception, the crucible may be a graphite crucible with a graphite cover, which is a high-temperature material (refractory) containing carbon element. B '5. Description of the invention (7) According to the above concept, in the step (a 3), the growth test piece and the solvent are both placed in the graphite crucible with graphite cover, so that the first epitaxial layer Inverting at the surface results in a second epitaxial layer. According to the above concept, in the step (a 3), the growth test piece may be an n-type substrate with high impurity doping, and the low-element first epitaxial layer with rare earth element is a low-doping The n-type epitaxial layer of the impurity, and the second epitaxial layer is a p-type epitaxial layer with a very thin thickness. According to the above concept, in the step (a 3), the growth test piece may be a p-type substrate with high doped impurities, and the low-impurity first epitaxial layer with rare earth elements is a low-doped The p-type epitaxial layer of the impurity, and the second epitaxial layer is an n-type epitaxial layer with a very thin thickness. According to the above concept, wherein the thickness of the second epitaxial layer can be 100 Α. According to the above concept, wherein the method of forming the first epitaxial layer in the step (a) can be metal organic chemical vapor deposition The method is (metal organic chemical vapor deposition > MOCVD).

經濟部中央標準局Μ工消費合作社印U 依據上述之構想，其中於該步驟（b)中形成該金靥層之方法係可以一蒸鍍（evaporator)、濺鍍 (sputtering)或電鍍之方式爲之。依據上述之構想，其中於該步驟（b)中該金屜層係可爲一鎳（Ni)、金（Au)、銀（Ag)、鋁（A1)、鈦（Ti)、鈀 (Pd)或銷（Pt)金靥層。 8 本呔疚乂叉遢K中家標准（CNS : ：： i .： < A? B7 五、發明説明（8 ) 依據上述之構想，其中於該步驟（b)之後更可包括步驟：c )遂行一回火（annealing)程序，以形成該蕭基結構。依據上述之構想，其中於該步驟（c )中該回火程序係可爲一快速加熱回火（rapid thermal annealing， R . T . A .)程序。乾------訂— 本案關於一種形成蕭基（Schottky)結構之另一較佳製程，其步驟包括：a )形成一具低雜質（dopant)之第一磊晶（expitaxy)層於一基板上方；其中，該第一磊晶層具一稀土元素（rare earth element)之雜質（dopant) b)形成一第二磊晶層於該第一磊晶層表面處；其中，該第二磊晶層具與該第一磊晶層相反型別（type)之雜質；以及 c )成一金屬層於該第二磊晶層上方；藉由於步驟（a )、 (b)中所形成之該第一與第二磊晶層，俾可提高蕭基位障與反向偏壓（reverse bias)，且降低反向漏電流 (reverse leakage current)。經濟部中央標準局員工消費合作社印製依據上述之構想，其中於該步驟（a )中更可包括下列步驟：a 1 )加入該具稀土元素之雜質於一溶劑中；a 2) 加入一溶質於該溶劑中；以及a 3)提供一生長試片並配合該溶劑，俾以成長出該第一磊晶層。依據上述之構想，其中於該步驟（a 2)之前更可包括步驟：a 1 1 )將該具稀土元素氧化物之溶劑，進行一烘烤與降溫冷卻。 9 乂度湟家漂莩（c\s ) .\4d: ,:厂义々According to the above concept, the Central Standards Bureau of the Ministry of Economic Affairs, M Industry and Consumer Cooperatives, according to the above concept, wherein the method of forming the gold layer in step (b) can be an evaporator, sputtering or electroplating method as Of it. According to the above concept, in the step (b), the gold drawer layer system may be a nickel (Ni), gold (Au), silver (Ag), aluminum (A1), titanium (Ti), palladium (Pd) Or pin (Pt) gold layer. 8 This guilt is for the K-home standard (CNS ::: i .: < A? B7. V. Description of the invention (8) According to the above-mentioned concept, the step (b) may further include a step: c ) An annealing procedure is then carried out to form the dike structure. According to the above conception, the tempering procedure in step (c) may be a rapid thermal annealing (R.T.A.) procedure. Dry ------ ordered—This case is about another preferred process for forming a Schottky structure. The steps include: a) forming a first low-impurity (dopant) epitaxial layer Above a substrate; wherein, the first epitaxial layer has a rare earth element (dopant) b) forming a second epitaxial layer on the surface of the first epitaxial layer; wherein, the second The epitaxial layer has impurities of the opposite type to the first epitaxial layer; and c) forming a metal layer above the second epitaxial layer; by the formation of the step (a), (b) The first and second epitaxial layers can increase the Schottky barrier and reverse bias (reverse bias), and reduce the reverse leakage current (reverse leakage current). The printing of the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs is based on the above concept, and the following steps can be included in this step (a): a 1) adding the impurities with rare earth elements in a solvent; a 2) adding a solute In the solvent; and a 3) providing a growth test piece and matching the solvent to grow the first epitaxial layer. According to the above concept, before the step (a 2), the method may further include the step: a 1 1) The solvent with the rare earth element oxide is subjected to a baking and cooling down. 9 乂度湟 Home float (c \ s). \ 4d:,: Factory meaning々

^_____R 五、發明説明（9 ) 依據上述之構想，其中該生長試片係可爲一具髙摻雜雜質之η型基板’該具稀土元素之低雜質第一磊晶層係爲一具低摻雜雜質之η型磊晶層，而該第二磊晶層則係爲一厚度極薄之Ρ型磊晶層》依據上述之構想，其中該生長試片係可爲一具髙摻雜雜質之Ρ型基板，該具稀土元素之低雜質第一磊晶層係爲一具高摻雜雜質之Ρ型磊晶層，而該第二磊晶層則係爲一厚度極薄之η型磊晶層。依據上述之構想，其中該第二磊晶層之厚度係可爲100 Α。依據上述之構想，其中於該步驟（b)中形成該第二磊晶層之方法係可以一化學汽相沈積法（chemical vapor deposition)爲之。依據上述之構想，其中於該步驟（c )之後更可包括步驟：d)遂行一回火（annealing)程序，以形成該蕭基結構。本案得藉由下列圖式及詳細說明，俾得一更深入之了解：第一圖：其係爲習知蕭基結構之結構示意圖；第二圖：其係爲本案之一較佳實施例之結構示意圖；第三圖：其係爲本案之一較佳實施例製程中以由鎳 (Ni)、鈀（Pd)、金（Au)、銀（Ag)等貴重金屬所形成之蕭基結構，並配合於該磊晶層中所摻雜對應相異Pr2〇3之摻量和相關變數之量測結果示意圖； 10 ( CNS ； ( 210 - ό^1ΰ〇2 五、發明説明（ι〇) 「尤閱讀泞而之注意""·、Λ填心第四圖：其係爲本案之一較佳實施例製程中以鎳/砷化鎵磊晶層（Ni/GaAs)構成蕭基結構爲例，並配合於該砷化鎵磊晶層中所摻雜對應相異Pr2〇3之摻量和電流一電壓 (I-V)特性量測結果示意圖；第五圖：其係爲圖四中所列舉之鎳/砷化鎵磊晶層（Ni /GaAs)蕭基結構之歐階深度分析曲線圖：第六圖：其係爲圖四中晶片表面化學成份比較分析圖，、-» 經濟部中央標準局員工消費合作社印製請參閱第二圖，其係爲本案之一較佳實施例之結構示意圖，於圖二中係包括：一基板1(例如，爲一具髙度摻雜之η型基板）、一磊晶層2、一厚度極薄之反轉 (inversion)磊晶層3以及一金屬層4 ;其中，該磊晶層2 係可爲接雜有稀土元素（r a r e e a r t h e 1 e m e n t )或稀土元素氧化物之低度摻雜雜質之n型磊晶層，該反轉磊晶層3 則係可爲一厚度約爲100A之極薄p型磊晶層；當然，於該反轉磊晶層3與該金屬層4之表面交接處S1則係具一位障，而該磊晶層2與該反轉磊晶層3間之表面交接處S2亦係具一位障，是以，由於該反轉磊晶層3之厚度極薄，故位於表面交接處SI、S2之位障係可構成一蕭基位障，易言之，以本案所得致之蕭基位障顯將較習知蕭基位障爲高。較佳者，該磊晶層2係可爲一具稀土元素之砷化鎵 (GaAs)磊晶層或一具稀土元素之磷化銦（InP)磊晶層。又，該稀土元素（rare earth element)係可爲一鐯（Pr)元素或鏡（Yb)元素；而該稀土元素氧化物則係可 1.1 中國部家樣辛（c:\s ; ;:丨'2 A7 _____ 五、發明説明（11 ) 爲三氧化二鐯（Pr203);當然，該稀土元素或該稀土元素氧化物之重量百分比係小於1 (Γ 4。另一較佳作法，該基板1係可爲一具髙摻雜雜質之p型基板，該磊晶層2則係可爲一具低摻雜雜質之p型磊晶層，至於該反轉磊晶層3則係可爲一厚度約爲10GA之極薄η型晶晶層。至於該金屬層4，其係可爲一鎳（Ni)、金（An)、銀 (Ag)、鋁（A1)、鈦（Ti)、鈀（Pd)或鉑（Pt)金屬層。以本案所揭示之蕭基結構係可使用於二極體中，以作爲一蕭基二極體，或係使用應用於高速通訊領域之砷化鎵電晶體中。再請參閱下列所示形成本案較佳實施例結構之一較佳實施例製程流程說明（並請配合參閱第一圖所示之結構），該較佳實施例製程之特徵所在即係以一液相磊晶沈積法 (liquid phase epitaxy，LPE)形成該具低雜質 (dopant)之磊晶層2於一具髙摻雜雜質之基板（生長試片）1上方，於其中，係可包括下列步驟： a)磊晶生長前，先行加入一重量百分比小於10_4 之三氧化二鐯（Pr2〇3)之稀土元素氧化物於一位於石墨坩堝（crucible)內欲預烤之鎵（Ga)溶劑中，之後並將該摻雜有稀土元素之鎵溶劑進行一烘烤程序，其中，烘烤溫度係可爲9 0 0 °C以上，而烘烤時間則可爲1 2小時，同時，降溫速率可爲l°C/niin並降至78G°C爲止；最後，便可推開加熱爐將該鎵溶劑予以直接冷卻至室溫；當然，該石墨坩 12 本故中ϋ家漂净-(CNS ; \4^.^ i Ό,Ά^ _____ R 5. Description of the invention (9) According to the above concept, the growth test piece may be an n-type substrate with high impurity doping. The low-element first epitaxial layer with rare earth element is a low Impurity-doped n-type epitaxial layer, and the second epitaxial layer is a very thin p-type epitaxial layer. According to the above concept, the growth test piece may be a high-doped impurity For a p-type substrate, the low-element first epitaxial layer with rare earth elements is a p-type epitaxial layer with highly doped impurities, and the second epitaxial layer is an n-type epitaxy with a very thin thickness晶层。 Crystal layer. According to the above conception, the thickness of the second epitaxial layer may be 100 Å. According to the above concept, the method of forming the second epitaxial layer in the step (b) may be a chemical vapor deposition method. According to the above-mentioned concept, after the step (c), it may further include the step: d) performing an annealing process to form the scholastic structure. This case can get a deeper understanding through the following diagrams and detailed descriptions: The first picture: it is a structural schematic diagram of the conventional Xiaoji structure; the second picture: it is a preferred embodiment of this case Structure diagram; The third picture: it is a Schottky structure formed by precious metals such as nickel (Ni), palladium (Pd), gold (Au), silver (Ag), etc. In addition, it is a schematic diagram of the measurement results of the doping amount and related variables corresponding to the different Pr2〇3 doped in the epitaxial layer; 10 (CNS; (210-^^ 1ΰ〇2 V. Description of the invention (ι〇) You should pay attention to it " " ·, ΛFourth figure: This is one of the preferred embodiments of this case. In the process, the nickel / gallium arsenide epitaxial layer (Ni / GaAs) constitutes a Schottky structure as Example, and in conjunction with the doping amount and current-voltage (IV) characteristic measurement results of the different Pr2〇3 doped in the epitaxial layer of gallium arsenide; Fifth figure: it is listed in FIG. 4 European-level depth analysis curve of the Ni / GaAs epitaxial layer (Ni / GaAs) Schottky structure: Figure 6: This is the wafer surface chemistry in Figure 4 A comparative analysis chart,-»Printed by the Employees’ Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economics, please refer to the second figure, which is a schematic structural diagram of a preferred embodiment of the case. In FIG. 2, it includes: a substrate 1 (eg , Is a high-doped n-type substrate), an epitaxial layer 2, an extremely thin inversion epitaxial layer 3 and a metal layer 4; wherein, the epitaxial layer 2 can be The n-type epitaxial layer contaminated with rare earth element (rareearthe 1 ement) or rare-earth element oxide is doped with a low degree of impurity, and the inverted epitaxial layer 3 may be a very thin p-type epitaxial layer with a thickness of about 100A Of course, there is a barrier at the junction S1 of the surface of the inverted epitaxial layer 3 and the metal layer 4, and the junction S2 of the surface of the epitaxial layer 2 and the inverted epitaxial layer 3 It also has a barrier. Therefore, because the thickness of the inverted epitaxial layer 3 is extremely thin, the barrier at the junction of SI and S2 on the surface can constitute a Schottky barrier, which is easy to say The resulting Schottky barrier will be higher than the conventional Schottky barrier. Preferably, the epitaxial layer 2 may be arsenic with a rare earth element A gallium (GaAs) epitaxial layer or an indium phosphide (InP) epitaxial layer with a rare earth element. Furthermore, the rare earth element can be a Pr element or a mirror (Yb) element; and The rare-earth element oxides can be 1.1 Chinese family-like symptom (c: \ s;;: 丨 '2 A7 _____ V. Description of the invention (11) is trioxide (Pr203); of course, the rare earth element or the The weight percentage of the rare earth element oxide is less than 1 (Γ 4. Another preferred method, the substrate 1 can be a p-type substrate with high doped impurities, and the epitaxial layer 2 can be a low doped The p-type epitaxial layer of impurity impurities, as for the inverted epitaxial layer 3, may be an extremely thin n-type crystal layer with a thickness of about 10GA. As for the metal layer 4, it may be a nickel (Ni), gold (An), silver (Ag), aluminum (A1), titanium (Ti), palladium (Pd) or platinum (Pt) metal layer. The Schottky structure disclosed in this case can be used in diodes as a Schottky diode, or in gallium arsenide transistors used in the field of high-speed communications. Please also refer to the following description of the preferred embodiment process flow for forming a preferred embodiment structure of this case (and please refer to the structure shown in the first figure). The feature of this preferred embodiment process is a liquid The liquid phase epitaxy (LPE) forms the epitaxial layer 2 with low impurity (dopant) on a substrate (growth test piece) 1 with high impurity doping, in which the following steps may be included : A) Before epitaxial growth, first add a rare-earth element oxide with a weight percentage of less than 10_4 cerium oxide (Pr2〇3) in a gallium (Ga) solvent to be pre-baked in a graphite crucible, Afterwards, the gallium solvent doped with rare earth elements is subjected to a baking process, wherein the baking temperature can be above 900 ° C, and the baking time can be 12 hours, and at the same time, the cooling rate can be l ° C / niin and drop to 78G ° C; finally, you can push the heating furnace to cool the gallium solvent directly to room temperature; of course, the graphite crucible 12 home bleaching-(CNS; \ 4 ^. ^ I Ό, Ά

Λ7 IV 五、發明説明（12 ) 堝係具一石墨蓋，其爲一含碳元素之高溫材料 (refractory)； -：i 意項再填預烤該鎵溶劑之目的係爲使於其中之該三氧化二鐯進行氧化還原；當然，另一作法亦係可直接將爲稀土元素之鐯（Pr)元素加入於該鎵溶劑中； b )加入一多晶或非晶（amorphous)之砷化鎵 (GaAs)溶質於該鎵溶劑中，其重量恰可爲可供給8〇〇°C飽合溫度磊晶生長之値，例如，於每1克鎵溶劑中即加入 0.03至Q. 05克之砷化鎵溶質； c )提供該具髙摻雜雜質之η型基板（生長試片）1，並予以置於該石墨坩堝中，俾於蓋上該石墨蓋及放入生長石英管後，配合亦位於該石墨坩堝中之該摻雜有稀土元素之鎵溶劑，以加熱成長出該具低雜質之η型磊晶層 2 ;其中，因應該具碳元素之石墨蓋以及該具低雜質濃度之 η型磊晶層2，俾可於該η型磊晶層2之表面處反轉 (invert)得致爲ρ型之該反轉磊晶層3 ; 經濟部中央標孪局y(工消費合作社印製同時，當將加熱該石墨坩堝至磊晶生長所需之過飽和溫度：820 °C後，即予以徐徐降溫（l°C/min)至 800 °C，俾形成該磊晶層2與該反轉磊晶層3 ;其中，降溫幕晶生長（l°C/min)時間爲7min ; d)將磊晶生長完成之生長試片，藉用單一電子槍 (眞空度小於lXl(T6t〇rr)形成該金屬層4於該反轉磊晶層3上方； 13 A7 B7 五、發明説明（13 ) 其中，形成該金靥層4之方法係可以一蒸鍍 Evaporator)、濺鍍（sputtering)或電鍍之方式爲之；而該金屬層4係可爲一鎳（Ni)、金（Au)、銀（Ag)、銘（A1)、鈦（Ti)、鈀（Pd)或鉑（Pt)金屬層：以及 e )遂行一回火（annealing)程序，溫度550 °C ’時間爲20秒，以形成該蕭基結構；該回火程序係可爲快速加熱回火（rapid thermal annealing， R · T · A .)程序。另一較佳者，於該步驟（a )中該稀土元素係可爲一鏡 (Yb)元素，其重量百分比係可小於1Q_4 ;又，於該步驟 (b )中該溶質係可爲一磷化銦（InP)溶質，該溶劑則係可爲一銦（In)溶劑，其生長溫度係爲620 ΐ左右，而生長飽和溫度則係爲6 3 0°C左右。又一較佳者，於該步驟（b)中該溶質係可爲一磷化銦 (InP)溶質’而該溶劑則係可爲一銦（In)溶劑。當然，於該步驟（c )中之該生長試片亦係可爲一具髙摻雜雜質之P型基板，是以，該具稀土元素之低雜質磊晶層2則係爲一具低摻雜雜質之P型磊晶層，而該反轉磊晶層 3則係爲一具高摻雜雜質且厚度極薄之n型磊晶層。再一較佳作法，其中形成圖二中所示之該磊晶層2與該反轉晶晶層3之方法係可以金屬有機化學汽相沈積法爲之 (metal organic chemical vapor deposition， MOCVD)爲之；或形成該反轉磊晶層3之方法係可以一化學汽相沈.積法（chemical vapor deposition)爲之。 14 本呔張 :中家嘌隹：（’NS D ':r 公 $ .i-rf:r • I —裝經濟部中央標準局員工消费合作社印裂 ϋ〇2五、發明説明（）經濟部中央標準局負工消费合作社印长爲揭露本案可達之功效，茲以由鎳（Ni)、鈀（Pd)、金（Au)、銀（Ag)等貴重金靥所形成之蕭基結構，並配合於該磊晶層2中所摻雜對應相異Pr203之摻量（分別爲樣品 #1、#2、#3及#4)和相關變數之量測結果，以圖三表示之；於圖三中，摻雜有稀土元素之該磊晶層2其所形成蕭基結構中之蕭基位障與未摻雜有稀土元素之該磊晶層2其所形成蕭基結構中之蕭基位障相較之下，不論以電流電壓特性量測或以電容電壓特性量測之結果，可知摻雜有稀土元素之該磊晶層2其所形成蕭基結構中之蕭基位障均有明顯上升之現象，例如，P r 2 0 3之摻量重量比小於5 X 1 (Γ 5以下時 (如樣品#3及#4所示者），其各類金屬所形成之蕭基位障可達0 . 9 2 e V以上，而其理想因子η則可維持小於1 . 0 3。請參閱第四圖，其係爲以鎳/砷化鎵磊晶層（Ni/ GaAs)構成蕭基結構爲例，並配合於該砷化鎵磊晶層中所摻雜對應相異Pr203之摻量和電流一電壓（I-V)特性量測結果，於圖四中可得知，摻雜有稀土元素之該砷化鎵磊晶層其所形成蕭基結構與未摻雜有稀土元素之該砷化鎵磊晶層其所形成蕭基結構之反向電流，於適當摻雜之下其反向電流當確有明顯降低之現象；然，若摻雜過量之稀土元素，則將導致晶格破壞而使漏電流再次加大’是以，稀土元素並不宜摻雜過量，以重量百分比小於1Q 4較佳。當然，於圖四中所列舉之鎳/砷化鎵磊晶層（Ni/ GaAs)蕭基結構，其電容一電壓（C-V)特性係可自第五圖 15 中阈為家嘌达 ί C \S ：ί- - ： ^ ;.1κ·.·..ί,ΐ,·ΐΛ;之·;.ί-.ΐ爭項裝. 訂 A: B' 五、發明説明（15) 中所示蕭基結構之歐階深度分析曲線圖得知，蓋，圖五中顯示之截距，於適當摻雜下係有明顯降低之現象。再當然，於適當摻雜稀土元素時，具低雜質濃度磊晶層之晶片表面氧（〇)成份（如樣品#3)將較未摻雜稀土元素之磊晶層晶片（如樣品#1)爲低，因而可減少表面狀態；同時，碳（C)濃度也升高，因而將導致具低雜質濃度磊晶層之晶片（如樣品#3)表面呈現極薄之反轉磊晶層，進而提升蕭基結構之蕭基位障，上述事實顯當可自一晶片表面化學成份比較分析圖（第六圖）中得知。又一較佳者，於前述較佳實施例內所示該步驟（a )中之該鎵溶劑係可改置於一含硼、氮元素之坩堝中，如此一來，便無產生如圖一所示之該反轉磊晶層3，然以此法所形成之蕭基結構之特性仍顯將較習知蕭基結構爲佳。經濟部中央標準局.負工消費合作社印裝綜上論述，透過本案之作法，於不需大幅變更製程步驟且僅需於磊晶過程中添加適量稀土元素或稀土元素氧化物之情況下，即可提髙蕭基結構中之蕭基位障與反向偏壓 (reverse bias)，且降低反向漏電流（reverse leakage current)，俾使改良所得之蕭基結構具有低成本且適合大量生產之特性，當然，更可廣泛地應用於需髙速通訊之領域，故本案實爲一極具產業價値之作。本案得由熟悉本技藝之人士任施匠思而爲諸般修飾，然皆不脫如附申請專利範圍所欲保護者。 16 仁汰家揉苹；C'NS ) : 2:、';Λ7 IV V. Description of the invention (12) The crucible is equipped with a graphite cover, which is a high-temperature material (refractory) containing carbon element;-: i The purpose of pre-baking the gallium solvent is for the purpose of making it Carbide trioxide is used for oxidation and reduction; of course, another method can also be to directly add the rare earth element (Pr) element to the gallium solvent; b) add a polycrystalline or amorphous (amorphous) gallium arsenide (GaAs) solute in the gallium solvent, the weight of which is just enough to supply epitaxial growth at a saturation temperature of 800 ° C, for example, 0.03 to Q.05 grams of arsenide is added to every 1 gram of gallium solvent Gallium solute; c) Provide the n-type substrate (growth test piece) 1 with high doped impurities, and place it in the graphite crucible, after the graphite lid is covered and placed in the growth quartz tube, the coordination is also located The gallium solvent doped with rare earth elements in the graphite crucible is heated to grow the n-type epitaxial layer 2 with low impurities; wherein, due to the graphite cover with carbon elements and the n-type with low impurity concentration Epitaxial layer 2 so that it can be inverted at the surface of the n-type epitaxial layer 2 so as to be ρ The inverted epitaxial layer 3 of the type; printed by the Central Standard Bureau of the Ministry of Economic Affairs (printed by the Industrial and Consumer Cooperative Society), and when the graphite crucible is heated to the supersaturation temperature required for epitaxial growth: 820 ° C, it will be gradually cooled (L ° C / min) to 800 ° C, to form the epitaxial layer 2 and the inverted epitaxial layer 3; wherein, the cooling curtain growth (l ° C / min) time is 7min; d) the epitaxial After the growth test is completed, use a single electron gun (with a space of less than 1 × 1 (T6t〇rr) to form the metal layer 4 above the inverted epitaxial layer 3; 13 A7 B7 5. Description of the invention (13) The method of the gold layer 4 can be a method of evaporation, sputtering or electroplating; and the metal layer 4 can be a nickel (Ni), gold (Au), silver (Ag), Ming (A1), titanium (Ti), palladium (Pd) or platinum (Pt) metal layers: and e) perform an annealing process at a temperature of 550 ° C for a period of 20 seconds to form the Schottky structure ; The tempering procedure can be rapid thermal annealing (rapid thermal annealing, R · T · A.) Procedure. Preferably, in the step (a), the rare earth element system may be a mirror (Yb) element, and its weight percentage may be less than 1Q_4; in addition, in the step (b), the solute system may be a phosphorus Indium (InP) solute, the solvent can be an indium (In) solvent, the growth temperature is about 620 l, and the growth saturation temperature is about 6 3 0 ° C. Still preferably, in the step (b), the solute system may be an indium phosphide (InP) solute 'and the solvent may be an indium (In) solvent. Of course, the growth test piece in the step (c) can also be a P-type substrate with high doped impurities, so the low impurity epitaxial layer 2 with rare earth elements is a low doped P-type epitaxial layer with impurity impurities, and the inverted epitaxial layer 3 is an n-type epitaxial layer with highly doped impurities and extremely thin thickness. Still another preferred method, wherein the method of forming the epitaxial layer 2 and the inverted crystal layer 3 shown in FIG. 2 can be metal organic chemical vapor deposition (MOCVD) as Or, the method of forming the inverted epitaxial layer 3 can be a chemical vapor deposition. Accumulation method (chemical vapor deposition). 14 This 呔弔张: Zhongjia purine: ('NS D': r public $ .i-rf: r • I — installed by the Ministry of Economic Affairs Central Standards Bureau employee consumer cooperatives to print the crack ϋ〇2 5. Invention description () Ministry of Economic Affairs In order to reveal the achievable effect of this case, the chief of the Central Bureau of Standards ’Consumer Labor Cooperatives has used a diminutive structure formed by precious gold deposits such as nickel (Ni), palladium (Pd), gold (Au), and silver (Ag). In conjunction with the measurement results of the doping amount corresponding to the different Pr203 doped in the epitaxial layer 2 (samples # 1, # 2, # 3, and # 4, respectively) and related variables, shown in Figure 3; In FIG. 3, the Schottky barrier in the Schottky structure formed by the epitaxial layer 2 doped with rare earth elements and the Schottky structure in the Schottky structure formed by the epitaxial layer 2 not doped with rare earth elements By comparison, whether measured by current voltage characteristics or measured by capacitor voltage characteristics, it can be known that the epitaxial layer 2 doped with rare earth elements has a Schottky barrier in the Schottky structure. The phenomenon of obvious rise, for example, when the doping weight ratio of Pr 2 0 3 is less than 5 X 1 (lower than Γ 5 (as shown in samples # 3 and # 4), the various metals form The Schottky barrier can reach more than 0.92 e V, and its ideal factor η can be maintained less than 1.03. Please refer to the fourth figure, which is a nickel / gallium arsenide epitaxial layer (Ni / GaAs) constitutes a Schottky structure as an example, and the measurement results of the doping amount and current-voltage (IV) characteristics corresponding to the different Pr203 doped in the gallium arsenide epitaxial layer are shown in FIG. 4, The reverse current of the Schottky structure formed by the gallium arsenide epitaxial layer doped with rare earth elements and the Schottky structure formed by the gallium arsenide epitaxial layer not doped with rare earth elements is appropriately doped The reverse current does have a significant reduction phenomenon; however, if the excessive doping of rare earth elements will lead to the destruction of the lattice and the leakage current will increase again. Therefore, the rare earth elements should not be excessively doped. The percentage is preferably less than 1Q 4. Of course, for the nickel / gallium arsenide epitaxial layer (Ni / GaAs) Schottky structure listed in Figure 4, the capacitance-voltage (CV) characteristic can be selected from the threshold in Figure 15 For home pura ί C \ S: ί--: ^; .1κ ·. · ..Ί, Ι, · ΙΛ; Zhi ·; .ί-.Ι Item item. Order A: B 'V. Description of invention ( 15) The Euclidean depth analysis curve of the Schottky structure shown in Figure 5 shows that the intercept shown in Figure 5 is significantly reduced under proper doping. Of course, when properly doped with rare earth elements , The oxygen (〇) component on the surface of the wafer with a low impurity concentration epitaxial layer (such as sample # 3) will be lower than the epitaxial layer wafer (such as sample # 1) that is not doped with rare earth elements, thus reducing the surface state; , The concentration of carbon (C) also increases, which will result in the wafer with a low impurity concentration epitaxial layer (such as sample # 3) showing a very thin inverted epitaxial layer on the surface, thereby enhancing the Schottky barrier of the Schottky structure, The above facts can be clearly seen from the comparative analysis of the chemical composition on the surface of a wafer (Figure 6). Still another preferred, the gallium solvent in the step (a) shown in the foregoing preferred embodiment can be replaced in a crucible containing boron and nitrogen elements, so that no production occurs as shown in FIG. The inverted epitaxial layer 3 is shown, but the characteristics of the Schottky structure formed by this method will still be better than the conventional Schottky structure. The Central Bureau of Standards of the Ministry of Economic Affairs. A summary of the printing work of the Consumer Labor Cooperative, through the method of this case, without significantly changing the process steps and only adding an appropriate amount of rare earth elements or rare earth element oxides in the epitaxy process, that is It can improve the Schottky barrier and reverse bias in the Schottky structure, and reduce the reverse leakage current, so that the improved Schottky structure has low cost and is suitable for mass production. The characteristics, of course, can be more widely used in the field of high-speed communication, so this case is really a very valuable industry. This case may be modified by anyone familiar with this skill, such as Shi Jiangsi, but none of them are as protected as the scope of the patent application. 16 Renji's rubbing apple; C'NS): 2 :, ';

Claims

A 8 B8 C8 D8 經濟部中央標準局爲工消費合作社印製六、申請專利範圍 1 .—種蕭基（Schottky)結構，其包括：一基板；一第一裔晶（expitaxy)層，分佈於該基板上方，該第一晶晶層係爲一具稀土元素（rare earth element) 之低雜質（dopant)磊晶層；以及一金靥層，分佈於該第一磊晶層上方；藉由該第一磊晶層，俾可提髙蕭基位障與反向偏壓（reverse bias)，且降低反向漏電流（reverse leakage current) · 2·如申請專利範圍第1項所述之蕭基結構，其中該基板係爲一具髙摻雜雜質之η型基板。 3 ·如申請專利範圍第2項所述之蕭基結構，其中該具稀土元素之低雜質第一磊晶層，係爲一具稀土元素之砷化鎵 (GaAs)磊晶層。 4 ·如申請專利範圍第2項所述之蕭基結構，其中該具稀土元素之低雜質第一磊晶層，係爲一具稀土元素之磷化銦 (InP)磊晶層。 5·如申請專利範圍第2項所述之蕭基結構，其中該具稀土元素之低雜質第一磊晶層，係爲一具低摻雜雜質之n型晶晶層。 6 ·如申請專利範圍第5項所述之蕭基結構，其中該具稀土元素之低雜質η型磊晶層，係可爲一具鐯（Pr)元素之低雜質η型磊晶層。 17 (請先閱讀背面之注意事項再4寫本頁)A 8 B8 C8 D8 Printed by the Central Bureau of Standards of the Ministry of Economy for the Industrial and Consumer Cooperatives 6. Patent application scope 1. A Schottky structure, including: a substrate; an expitaxy layer, distributed in Above the substrate, the first crystal layer is a low-dopant epitaxial layer with rare earth elements; and a gold layer is distributed above the first epitaxial layer; by the The first epitaxial layer, so that it can raise the Xiaoji barrier and reverse bias (reverse bias), and reduce the reverse leakage current (reverse leakage current) · 2 · as described in item 1 of the scope of patent application In the structure, the substrate is an n-type substrate with high impurity doping. 3. The Schottky structure as described in item 2 of the patent application scope, wherein the low-impurity first epitaxial layer with rare earth elements is a gallium arsenide (GaAs) epitaxial layer with rare earth elements. 4. The Schottky structure as described in item 2 of the patent application, wherein the low-impurity first epitaxial layer with rare earth elements is an indium phosphide (InP) epitaxial layer with rare earth elements. 5. The Schottky structure as described in item 2 of the patent application scope, wherein the low-impurity first epitaxial layer with rare earth elements is an n-type crystal layer with low-doped impurities. 6. The Schottky structure as described in item 5 of the patent application scope, wherein the low-impurity n-type epitaxial layer with rare earth elements may be a low-impurity n-type epitaxial layer with Pr elements. 17 (Please read the notes on the back before writing this page 4)

疚尺ΐ 家漂準（CNS ) 烙（2丨ΰ,.Ά:公空1 經濟部中央標準局員工消费合忭社印货 C8 DS 六、申請專利範圍 7 .如申請專利範圍第5項所述之蕭基結構，其中該具稀土元素之低雜質η型磊晶層，係可爲一具鏟（Yb)元素之低雜質η型磊晶層。 8·如申請專利範圍第5項所述之蕭基結構，其中該具稀土元素之低雜質η型磊晶層，係可爲一具稀土元素氧化物之低雜質η型磊晶層。 9·如申請專利範圍第8項中所述之蕭基結構，其中該具稀土兀素氧化物之低雜質η型幕晶層，係可爲一具三氧化二鐯（Pr2〇3)之低雜質η型磊晶層。 1 0 ·如申請專利範圍第1項所述之蕭基結構，其中該基板係爲一具髙摻雜雜質之ρ型基板。 1 1 ·如申請專利範圍第1 〇項所述之蕭基結構，其中該具稀土元素之低雜質第一磊晶層，係爲一具低摻雜雜質之 Ρ型磊晶層》 1 2 ·如申請專利範圍第1項所述之蕭基結構，其中該具稀土元素之低雜質第一磊晶層，其稀土元素或稀土元素氧化物之重量百分比係可小於1 (Γ 4。 1 3 ·如申請專利範圍第1項所述之蕭基結構，其中該金屬層係可爲一鎳（Ni)、金（Au)、銀（Ag)、銀（Α1)、欽 (Ti )、鈀（Pd)或鉑（Pt)金屬層。 1 4 ·如申請專利範圍第1項所述之蕭基結構，其中該蕭基結構更可包括= 18 (請先閱讀背面之注意事項再填巧本页) 、-° 丨線 AS Βλ C8 DS 經濟部中央標準局負工消費合作社印-ΐ' 六、申請專利範圍一第二磊晶層，其係分佈於該第一磊晶層與該金屬層之間，該第二磊晶層係與該第一磊晶層具相反型別（type) 之雜質。 1 5 ·如申請專利範圍第1 4項所述之蕭基結構，其中於該基板係爲一具髙摻雜雜質之η型基板、該具稀土元素之低雜質第一磊晶層係爲一具低摻雜雜質之η型磊晶層時，該第二磊晶層係爲一厚度極薄之Ρ型磊晶層。 16·如申請專利範圍第14項所述之蕭基結構，其中於該基板係爲一具髙摻雜雜質之Ρ型基板、該具稀土元素之低雜質第一磊晶層係爲一具低摻雜雜質之Ρ型磊晶層時，該第二磊晶層係爲一厚度極薄之η型磊晶層。 17·如申請專利範圍第14項所述之形成蕭基結構之製程，其中該第二磊晶層之厚度係可爲100Α。 1 8 ·如申請專利範圍第1項所述之蕭基結構，其中該蕭基結構係可使用於二極體中，以作爲一蕭基二極體。 1 9 ·如申請專利範圍第1項所述之蕭基結構，其中該蕭基結構係可使用於砷化鎵電晶體中。 20 ·—種形成蕭基（Schottky)結構之製程，其步驟包括： a )形成一具低雜質（dopant)之第一磊晶 (expitaxy)層於一基板上方；其中，該第一幕晶層接雜具稀土元素（rare earth element)之雜質 (dopant);以及 b)形成一金屬層於該第一磊晶層上方； 19 (請先間讀背而之注意事項再Μ·.·,·.'.·本百:'. 裝、γό .丨级 ο ο \BCD 經濟部中央標準局5貝工消費合作社印製々、申請專利範圍藉由於步驟（a )中所形成之該第一磊晶層，俾可提高蕭基位障與反向偏壓（reverse bias)，且降低反向漏電流（reverse leakage current) · 2 1 ·如申請專利範圍第2 0項所述之形成蕭基結構之製程，其中於該步驟（a )中形成該第一磊晶層之方法係可以液相磊晶沈積法（liquid phase epitaxy， LPE)爲之。 2 2 ·如申請專利範圍第2 1項所述之形成蕭基結構之製程，其中於該步驟（a )中更可包括下列步驟： a 1 )加入該具稀土元素之雜質於一溶劑中； a 2)加入一溶質於該溶劑中；以及 a 3)提供一生長試片並配合該溶劑，俾以成長出該第一晶晶層。 2 3 ·如申請專利範圍第2 2項所述之形成蕭基結構之製程’其中於該步驟（a 1)中該稀土元素係可爲一镨（pr)元素，其重量百分比係可小於1〇_4。 2 4 ·如申請專利範圍第2 2項所述之形成蕭基結構之製程’其中於該步驟（a 1)中該稀土元素係可爲一鏡（Yb)元素’其重量百分比係可小於1(Γ4。 2 5 ‘如申請專利範圍第2 2項所述之形成蕭基結構之製程’其中於該步驟（a 1 )中該稀土元素係可爲一三氧化二鐯（Pr2〇3)之稀土元素氧化物，其重量百分比係可小於1〇_ 4 (請先閱讀背面之注意事項再填V·:〕本頁 -" ，丨^, HH I i 髮 n 20 經濟部中央標牟局員工消費合作杜印裝 AS B8 C8 _____ D8 六、申請專利範圍 2 6 ·如申請專利範圍第2 2項所述之形成蕭基結構之製程，其中於該步驟（a 2)之前更可包括步驟： a 1 1 )將該具稀土元素氧化物之溶劑，進行一烘烤與降溫冷卻。 2 7 ·如申請專利範圍第2 6項所述之形成蕭基結構之製程’其中於該步驟（a 1 1 )中，烘烤溫度係可爲900 t，烘烤時間則係可爲1 2小時。 2 8 ·如申請專利範圔第2 6項所述之形成蕭基結構之製程，其中於該步驟（a 1 1 )中，降溫速率係可爲1-C /min，並至780 °C爲止，之後並直接冷卻至室溫溫度。 2 9 ·如申請專利範圍第2 2項所述之形成蕭基結構之製程’其中於該步驟（a 2)中該溶質係可爲一砷化鎵（GaAs) 溶質，而該溶劑則係可爲一鎵（Ga)溶劑。 3 0 ·如申請專利範圍第2 9項所述之形成蕭基結構之製程’其中該砷化鎵（GaAs)溶質係可爲一多晶或非晶 (amorphous)溶質。 3 1 ·如申請專利範圍第2 2項所述之形成蕭基結構之製程，其中於該步驟（a 2)中該溶質係可爲一磷化銦（InP) 溶質，而該溶劑則係可爲一銦（In)溶劑。 3 2 ·如申請專利範圍第2 2項所述之形成蕭基結構之製程’其中於該步驟（a 3)中需進行加熱至磊晶生長之過飽和溫度，之後並予以降溫。 3 3 ·如申請專利範圍第2 2項所述之形成蕭基結構之製程’其中於該步驟（a 3)中該生長試片係可爲一具髙摻雜 ______ 4,-_____I τ II_____； , . Ηγ 、-0 ,-、 (請先閱讀背面之注意事項再填艿本1Γ) 21 經濟部中央標準局負工消費合作社印裴 C8 DS 六、申請專利範圍雜質之η型基板，而該具稀土元素之低雜質第一磊晶層貝(1 係爲一具低摻雜雜質之η型磊晶層。 3 4 ·如申請專利範圍第2 2項所述之形成蕭基結構之製程’其中於該步驟（a 3)中該生長試片係可爲一具高摻雜雜質之P型基板’而該具稀土元素之低雜質第一磊晶厝則係爲一具低摻雜雜質之p型磊晶層。 3 5 ·如申請專利範圍第2 2項所述之形成蕭基結構之製程’其中於該步驟（a 1 )中該溶劑係置於一坩堝 (crucible)中。 3 6 ·如申請專利範圍第3 5項所述之形成蕭基結構之製程’其中該坩堝係可爲一含硼、氮（B、N)元素之髙溫材料 (refractory) ° 3 7 ·如申請專利範圍第3 5項所述之形成蕭基結構之製程，其中該坩堝係可爲一石墨坩堝，該石墨坩堝具一石墨蓋’其係爲含碳兀素之高溫材料（refract〇ry)。 3 8 ·如申請專利範圍第3 7項所述之形成蕭基結構之製程’其中於該步驟（a 3)中該生長試片與該溶劑皆置於該具石墨蓋之石墨坩堝中，以於該第一磊晶層之表面處反轉 (invert)得致一第二磊晶層。 3 9 ·如申請專利範圍第3 8項所述之形成蕭基結構之製程’其中於該步驟（a 3 )中該生長試片係可爲一具髙摻雜雜質之η型基板，該具稀土元素之低雜質第一磊晶層係爲一具低摻雜雜質之η型磊晶層，而該第二磊晶層則係爲— 厚度極薄之ρ型磊晶層。請先間讀背面之注意事項再填Ϊ·:"本頁) __ +.-!1.1 · u m ;,···1 丨 1 太中:¾¾ 家樣隼（CNS ) y 公g ' 經濟部中央標準局負工消资合作社印装 A；S BS C8 D8 六、申請專利範圍 4 0 ·如申請專利範圍第3 8項所述之形成蕭基結構之製程，其中於該步驟（a 3)中該生長試片係可爲一具髙摻雜雜質之P型基板，該具稀土元素之低雜質第一磊晶層係爲一具低摻雜雜質之P型磊晶層，而該第二磊晶層則係爲一厚度極薄之η型磊晶層。 41·如申請專利範圍第38項所述之形成蕭基結構之製程，其中該第二磊晶層之厚度係可爲100Α。 4 2 ·如申請專利範圍第2 0項所述之形成蕭基結構之製程，其中於該步驟（a)中形成該第一磊晶層之方法係可以金屬有機化學汽相沈積法爲之（metal organic chemical vapor deposition，M0CVD)爲之。 43·如申請專利範圍第20項所述之形成蕭基結構之製程，其中於該步驟（b)中形成該金屬層之方法係可以一蒸鍍（evaporator)、涵鍍（sputtering)或電鑛之方式爲之。 4 4 ·如申請專利範圍第2 0項所述之形成蕭基結構之製程’其中於該步驟（b )中該金屬層係可爲一鎳（Ni)、金 (Au)、銀（Ag)、鋁（A1)、鈦（Ti)、銷（Pd)或銷（Pt)金靥層。 45·如申請專利範圍第20項所述之形成蕭基結構之製程’其中於該步驟（b )之後更可包括步驟： c )遂行一回火（annealing)程序，以形成該蕭基結構。 23 _ It .、 — TJ Ά I 、=α 铃 (請先κ-背而之注意事項再填A本頁) 本^中^园家培达；C\S .,\4叹柊（2::) <2 經濟部中央標準局负工消費合作社印敦 Λ 8 Β8 C8 D8 六、申請專利範圍 4 6 ·如申請專利範圍第4 5項所述之形成蕭基結構之製程，其中於該步驟（c )中該回火程序係可爲一快速加熱回火（rapid thermal annealing，R.T.A.)程序。 4 7 ·—種形成蕭基（Schottky)結構之製程，其步驟包括： a )形成一具低雜質（dopant)之第一幕晶 * (expitaxy)層於一基板上方；其中，該第一磊晶層具一稀土元素（rare earth element)之雜質（dopant) b) 形成一第二磊晶層於該第一磊晶層表面處；其中，該第二磊晶層具與該第一磊晶層相反型別（type)之雜質；以及 c) 成一金屣層於該第二磊晶層上方；藉由於步驟（a )、（b)中所形成之該第一與第二磊晶層，俾可提高蕭基位障與反向偏壓（reverse bias)，且降低反向漏電流（reverse leakage current) · 4 8 ·如申請專利範圍第4 7項所述之形成蕭基結構之製程，其中於該步驟（a)中更可包括下列步驟： a 1)加入該具稀土元素之雜質於一溶劑中； a 2 )加入一溶質於該溶劑中；以及 a 3)提供一生長試片並配合該溶劑，俾以成長出該第 . 一裔晶層》 49·如申請專利範圍第47項所述之形成蕭基結構之製程’其中於該步驟（a 2)之前更可包括步驟： 24 ________ —I________丁______i 永、v'口"· (請先閱讀背面之注意事項再填巧本頁) 家標涑（CNS ) A4W 怀；：厂公窄 > ABCD 六經濟部中央標準局員工消#合作社印製申請專利範圍 a 1 1 )將該具稀土元素氧化物之溶劑，進行一烘烤與降溫冷卻。 5 0 ·如申請專利範圍第4 7項所述之形成蕭基結構之製程’其中該生長試片係可爲一具髙摻雜雜質之η型基板，該具稀土元素之低雜質第一磊晶層係爲一具低摻雜雜質之 η型磊晶層，而該第二磊晶層則係爲一厚度極薄之ρ型磊 * 晶層。 5 1 ·如申請專利範圍第4 7項所述之形成蕭基結構之製程’其中該生長試片係可爲一具髙摻雜雜質之ρ型基板，該具稀土元素之低雜質第一磊晶層係爲一具低摻雜雜質之 Ρ型磊晶層，而該第二磊晶層則係爲一厚度極薄之η型磊晶層。 5 2 ·如申請專利範圍第4 7項所述之形成蕭基結構之製程，其中該第二磊晶層之厚度係可爲100Α。 5 3 ·如申請專利範圍第4 7項所述之形成蕭基結構之製程’其中於該步驟（b)中形成該第二磊晶層之方法係可以一化學汽相沈積法（chemical vapor deposition)爲之。 5 4 ·如申請專利範圍第4 7項所述之形成蕭基結構之製程，其中於該步驟（c )之後更可包括步驟： d)遂行一回火（annealing)程序，以形成該蕭基結構。 (对先¾讀背而之注意事項再填巧本頁) 裝 *-» 25Guilin l Home drift standard (CNS) branding (2 丨 ΰ, .Ά: public air 1 Central Ministry of Economic Affairs Employee Consumption Union printed goods C8 DS VI. Patent application scope 7. If applying for patent scope item 5 In the Xiao-based structure described above, the low-impurity n-type epitaxial layer with rare earth elements may be a low-impurity n-type epitaxial layer with shovel (Yb) elements. 8. As described in item 5 of the patent application scope The low-base structure, wherein the low-impurity n-type epitaxial layer with rare earth elements, can be a low-impurity n-type epitaxial layer with rare earth element oxides. 9. As described in item 8 of the patent application scope The structure of the Schottky structure, in which the low-impurity n-type curtain crystal layer with rare-earth element oxide can be a low-impurity n-type epitaxial layer with cerium oxide (Pr2〇3). The Schottky structure as described in item 1 of the scope, wherein the substrate is a p-type substrate with high doped impurities. 1 1 · The Schottky structure as described in item 10 of the patent application scope, where the The low-impurity first epitaxial layer is a p-type epitaxial layer with low-doped impurities "1 2 · If the patent application is No. 1 The Xiao-based structure described in the item, wherein the weight percentage of the rare earth element or rare earth element oxide of the low-impurity first epitaxial layer with rare earth element may be less than 1 (Γ 4. 1 3 The Schottky structure described in item 1, wherein the metal layer system may be a nickel (Ni), gold (Au), silver (Ag), silver (Α1), Qin (Ti), palladium (Pd) or platinum (Pt) Metal layer. 1 4 · As shown in item 1 of the patent application scope, the structure of the Shaw-based structure may include = 18 (please read the precautions on the back before filling in this page),-° 丨线 AS Βλ C8 DS Printed by the Consumer Labor Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. 6. Patent application-a second epitaxial layer, which is distributed between the first epitaxial layer and the metal layer, the second epitaxial layer The layer and the first epitaxial layer have opposite type impurities. 1 5 · The Xiao-based structure as described in item 14 of the patent application scope, wherein the substrate is a high impurity doped impurity When the n-type substrate and the low-element first epitaxial layer with rare earth elements are an n-type epitaxial layer with low doped impurities, the second epitaxial layer The crystal layer is a p-type epitaxial layer with a very thin thickness. 16. The Schottky structure as described in item 14 of the patent application, wherein the substrate is a p-type substrate with high doped impurities, the device When the rare-earth element low-impurity first epitaxial layer is a p-type epitaxial layer with low-doped impurities, the second epitaxial layer is an n-type epitaxial layer with a very thin thickness. The process for forming a Schottky structure as described in item 14 of the scope, wherein the thickness of the second epitaxial layer can be 100 Α. 1 8 · The Schottky structure as described in item 1 of the patent application scope, wherein the Schottky structure The system can be used in diodes as a Schottky diode. 1 9 • The Schottky structure as described in item 1 of the patent application scope, wherein the Schottky structure can be used in gallium arsenide transistors. 20.—A process for forming a Schottky structure, the steps of which include: a) forming a first low-dopant (expanty) layer on a substrate; wherein, the first curtain layer Dopant with rare earth element; and b) Form a metal layer on top of the first epitaxial layer; 19 (Please read the relevant notes first and then M ····· . '. · 本百:'. Installed, γό. 丨 level ο ο \ BCD Central Ministry of Economic Affairs 5 Beigong Consumer Cooperative printed 々, patent application scope due to the first Lei formed in step (a) Crystalline layer, so as to increase the Schottky barrier and reverse bias (reverse bias), and reduce the reverse leakage current (reverse leakage current) · 2 1 · the formation of a Schottky structure as described in item 20 of the patent application Process, wherein the method of forming the first epitaxial layer in the step (a) can be liquid phase epitaxy (LPE). 2 2 · As claimed in item 21 of the scope of patent application The process of forming a Schottky structure as described above, in which step (a) may further include the following steps : A 1) adding the impurities with rare earth elements in a solvent; a 2) adding a solute in the solvent; and a 3) providing a growth test piece and cooperating with the solvent to grow the first crystal Floor. 2 3 · The process of forming a Schottky structure as described in item 2 of the scope of the patent application 'wherein the rare earth element in this step (a 1) may be a praseodymium (pr) element, and its weight percentage may be less than 1. 〇_4. 2 4 · The process of forming a Schottky structure as described in item 2 of the scope of patent application 'where the rare earth element in this step (a 1) can be a mirror (Yb) element' whose weight percentage can be less than 1 (Γ4. 2 5 'Process for forming a schizophrenia structure as described in item 22 of the patent scope' wherein the rare earth element in the step (a 1) may be a trioxide (Pr2〇3) Rare earth element oxides, the weight percentage can be less than 1_ 4 (please read the notes on the back before filling V · :) this page- ", 丨 ^, HH I i Fat n 20 Ministry of Economic Affairs Central Standards Bureau Employee consumption cooperation Du Printing AS B8 C8 _____ D8 VI. Scope of patent application 2 6 · The process of forming a Xiaoji structure as described in item 2 of the scope of patent application, including the step before this step (a 2) ： A 1 1) The solvent with rare earth element oxide is subjected to a baking and cooling down. 2 7 · The process of forming a Schottky structure as described in item 26 of the scope of patent application 'wherein in this step (a In 1 1), the baking temperature can be 900 t, and the baking time can be 12 hours. 2 8 · The process of forming a Schottky structure as described in Item 26 of the patent application, where in this step (a 1 1), the cooling rate can be 1-C / min and up to 780 ° C , And then directly cooled to room temperature. 2 9 · The process of forming a Schottky structure as described in item 22 of the patent scope 'where the solute system in this step (a 2) may be a gallium arsenide ( GaAs) solute, and the solvent may be a gallium (Ga) solvent. 3 0 · The process of forming a Schottky structure as described in item 29 of the patent scope 'wherein the gallium arsenide (GaAs) solute may be It is a polycrystalline or amorphous solute. 3 1 · The process of forming a Schottky structure as described in item 22 of the patent application scope, wherein the solute in the step (a 2) may be a phosphating Indium (InP) solute, and the solvent can be an indium (In) solvent. 3 2 · The process of forming a Schottky structure as described in item 22 of the patent scope 'is included in this step (a 3) It needs to be heated to the supersaturation temperature for epitaxial growth, and then to lower the temperature. 3 3 · The formation of Xiao as described in item 2 of the scope of patent application The manufacturing process of the structure 'where the growth test piece in this step (a 3) can be a high-doped ______ 4, -_____ I τ II_____;,. Ηγ, -0,-, (please read the notes on the back first Matters refilled in 1Γ) 21 Inner C8 DS of the Consumer Labor Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. 6. Patent-applicable impurity type n-type substrates, and the rare-earth element low-element first epitaxial layer shell (1 series is An n-type epitaxial layer with low doping impurities. 3 4 · The process for forming a Schottky structure as described in item 2 of the patent scope 'where the growth test piece in this step (a 3) can be a P-type substrate with highly doped impurities' and the The low-impurity first epitaxial compound with rare earth elements is a p-type epitaxial layer with low-doped impurities. 3 5 • The process of forming a Schottky structure as described in item 2 of the scope of the patent application wherein the solvent is placed in a crucible in this step (a 1). 3 6 · The process of forming a schizophrenic structure as described in item 35 of the patent scope 'wherein the crucible can be a refractory containing boron and nitrogen (B, N) elements ° 3 7 · If The process of forming a Schottky structure as described in item 35 of the patent application scope, wherein the crucible may be a graphite crucible with a graphite cover which is a high temperature material (refractry) containing carbon elements . 3 8 · The process of forming a Schottky structure as described in item 37 of the scope of the patent application 'wherein the growth test piece and the solvent are placed in the graphite crucible with graphite lid in the step (a 3), to Inverting at the surface of the first epitaxial layer results in a second epitaxial layer. 3 9 · The process of forming a Schottky structure as described in item 38 of the patent application scope, wherein in this step (a 3) the growth test piece may be an n-type substrate with high doped impurities, the The low-impurity rare-earth element first epitaxial layer is an n-type epitaxial layer with low-doped impurities, and the second epitaxial layer is a p-type epitaxial layer with a very thin thickness. Please read the precautions on the back before filling in Ϊ ·: " this page) __ + .-! 1.1 · um;, ··· 1 丨 1 Taizhong: ¾¾ Family Falcon (CNS) y Gongg 'Ministry of Economic Affairs Printed and printed by the Central Standards Bureau's negative work consumer capital cooperative A; S BS C8 D8 6. Scope of patent application 4 0 · The process of forming a Xiaoji structure as described in item 38 of the patent application scope, in which step (a 3) The growth test piece can be a P-type substrate with high impurity doping, the low-element first epitaxial layer with rare earth elements is a P-type epitaxial layer with low doping impurities, and the second The epitaxial layer is an n-type epitaxial layer with extremely thin thickness. 41. The process for forming a Schottky structure as described in item 38 of the patent application scope, wherein the thickness of the second epitaxial layer may be 100 Å. 4 2 · The process of forming a Schottky structure as described in item 20 of the patent application scope, wherein the method of forming the first epitaxial layer in the step (a) can be a metal organic chemical vapor deposition method ( metal organic chemical vapor deposition (MOCVD). 43. The process of forming a Schottky structure as described in item 20 of the patent application scope, wherein the method of forming the metal layer in the step (b) can be an evaporator, sputtering or electroplating Way. 4 4 · The process of forming a Schottky structure as described in item 20 of the patent application scope 'wherein the metal layer in this step (b) can be a nickel (Ni), gold (Au), silver (Ag) , Aluminum (A1), titanium (Ti), pin (Pd) or pin (Pt) gold layer. 45. The process for forming a Schottky structure as described in item 20 of the patent application scope, wherein after this step (b) may further include a step: c) performing an annealing process to form the Schottky structure. 23 _ It. 、 — TJ Ά I 、 = α 鈴 (please pay attention to κ- back then fill in this page A) This ^ 中 ^ Yuanjia Peida; C \ S., \ 4 Sigh (2: :) < 2 The Ministry of Economic Affairs, Central Standards Bureau, Negative Labor Consumer Cooperative Indone Λ 8 Β8 C8 D8 6. Patent application scope 4 6 · The process of forming the Shaw base structure as described in item 4 of the patent application scope, in which In step (c), the tempering process may be a rapid thermal annealing (RTA) process. 4 7-a process for forming a Schottky structure, the steps of which include: a) forming a first-stage crystal * (expitaxy) layer with low dopant on a substrate; The crystal layer has a rare earth element (dopant) b) forming a second epitaxial layer on the surface of the first epitaxial layer; wherein, the second epitaxial layer has the first epitaxial layer Layer of opposite type (type) impurities; and c) forming a gold layer on the second epitaxial layer; by the first and second epitaxial layers formed in steps (a) and (b), In order to increase the Schottky barrier and reverse bias (reverse bias), and reduce the reverse leakage current (reverse leakage current) · 4 8 · The process of forming a Schottky structure as described in item 4 of the patent application scope, The step (a) may further include the following steps: a 1) adding the rare earth element impurity in a solvent; a 2) adding a solute in the solvent; and a 3) providing a growth test piece and With the solvent, so as to grow the first-generation crystal layer "49. If the 47 The process of forming a Shaw-based structure ', which can include steps before this step (a 2): 24 ________ —I ________ 丁 ______i Yong, v' 口 " · (Please read the notes on the back and fill in this copy Page) Home Standard (CNS) A4W Huai ;: Factory Public Narrows> ABCD Six Ministry of Economic Affairs Central Standards Bureau Employee Consumers #Cooperative printed patent application scope a 1 1) The solvent with rare earth element oxides was baked Bake and cool down. 5 0 · The process for forming a Schottky structure as described in item 4 of the patent application scope 'wherein the growth test piece may be an n-type substrate with high impurity doping, the low impurity first rare earth element The crystal layer is an n-type epitaxial layer with low doping impurities, and the second epitaxial layer is a p-type epitaxial * crystal layer with a very thin thickness. 5 1 · The process of forming a Schottky structure as described in Item 4 7 of the patent application scope wherein the growth test piece may be a p-type substrate with high impurity doping, the low impurity first rare earth element The crystal layer is a p-type epitaxial layer with low doping impurities, and the second epitaxial layer is an n-type epitaxial layer with a very thin thickness. 5 2 • The process for forming a Schottky structure as described in item 47 of the scope of the patent application, wherein the thickness of the second epitaxial layer may be 100 Å. 5 3 · The process of forming a Schottky structure as described in item 4 of the scope of patent application 'wherein the method of forming the second epitaxial layer in step (b) can be a chemical vapor deposition method (chemical vapor deposition method) ) For it. 5 4 · The process of forming a Schaeffler structure as described in item 4 of the scope of patent application, wherein after this step (c) may further include steps: d) An annealing process is performed to form the Schaeffer structure. 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