TW288173B - - Google Patents

Info

Publication number
TW288173B
TW288173B TW084112670A TW84112670A TW288173B TW 288173 B TW288173 B TW 288173B TW 084112670 A TW084112670 A TW 084112670A TW 84112670 A TW84112670 A TW 84112670A TW 288173 B TW288173 B TW 288173B
Authority
TW
Taiwan
Application number
TW084112670A
Original Assignee
Samsug Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsug Electronics Co Ltd filed Critical Samsug Electronics Co Ltd
Application granted granted Critical
Publication of TW288173B publication Critical patent/TW288173B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Compression Or Coding Systems Of Tv Signals (AREA)
  • Bipolar Integrated Circuits (AREA)
TW084112670A 1994-11-30 1995-11-28 TW288173B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940032135A KR0151011B1 (ko) 1994-11-30 1994-11-30 바이폴라 트랜지스터 및 그 제조방법

Publications (1)

Publication Number Publication Date
TW288173B true TW288173B (zh) 1996-10-11

Family

ID=19399778

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084112670A TW288173B (zh) 1994-11-30 1995-11-28

Country Status (6)

Country Link
US (2) US5675386A (zh)
EP (1) EP0715356B1 (zh)
JP (1) JPH08227899A (zh)
KR (1) KR0151011B1 (zh)
DE (1) DE69525316T2 (zh)
TW (1) TW288173B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5926224A (en) * 1995-07-31 1999-07-20 Sony Corporation Imaging, system, video processing apparatus, encoding apparatus, encoding method, and method of removing random noise
US6108039A (en) * 1996-05-23 2000-08-22 C-Cube Microsystems, Inc. Low bandwidth, two-candidate motion estimation for interlaced video
US6157675A (en) * 1997-04-04 2000-12-05 Sony Corporation Image transmission device and image transmission method
FR2786608B1 (fr) * 1998-11-30 2001-02-09 St Microelectronics Sa Procede de fabrication de circuits integres bicmos sur un substrat cmos classique
US6979908B1 (en) * 2000-01-11 2005-12-27 Texas Instruments Incorporated Input/output architecture for integrated circuits with efficient positioning of integrated circuit elements
KR100398581B1 (ko) * 2001-02-22 2003-09-19 주식회사 하이닉스반도체 반도체 소자의 바이폴라 트랜지스터 제조방법
JP2003197908A (ja) * 2001-09-12 2003-07-11 Seiko Instruments Inc 半導体素子及びその製造方法
US7759924B2 (en) * 2003-11-25 2010-07-20 Northwestern University Cascaded MOSFET embedded multi-input microcantilever
KR100731087B1 (ko) * 2005-10-28 2007-06-22 동부일렉트로닉스 주식회사 바이씨모스 소자 및 그의 제조방법
EP2920962A4 (en) 2012-11-13 2016-07-20 Intel Corp ADAPTIVE TRANSFORMATION ENCODING OF CONTENT FOR NEXT GENERATION VIDEO
EP2952003B1 (en) 2013-01-30 2019-07-17 Intel Corporation Content adaptive partitioning for prediction and coding for next generation video

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836998A (en) * 1969-01-16 1974-09-17 Signetics Corp High voltage bipolar semiconductor device and integrated circuit using the same and method
JPS60242660A (ja) * 1985-04-05 1985-12-02 Hitachi Ltd 半導体集積回路
DE3789110D1 (de) * 1987-11-20 1994-03-24 Itt Ind Gmbh Deutsche Monolithisch integrierter Leistungsbreitbandverstärker.
US4929996A (en) * 1988-06-29 1990-05-29 Texas Instruments Incorporated Trench bipolar transistor
US5286986A (en) * 1989-04-13 1994-02-15 Kabushiki Kaisha Toshiba Semiconductor device having CCD and its peripheral bipolar transistors
US4960726A (en) * 1989-10-19 1990-10-02 International Business Machines Corporation BiCMOS process
US5107345A (en) * 1990-02-27 1992-04-21 Qualcomm Incorporated Adaptive block size image compression method and system
US5124271A (en) * 1990-06-20 1992-06-23 Texas Instruments Incorporated Process for fabricating a BiCMOS integrated circuit
FR2672733B1 (fr) * 1991-02-13 1997-08-22 France Telecom Perfectionnement au collecteur d'un transistor bipolaire compatible avec la technologie mos.
US5179432A (en) * 1991-08-15 1993-01-12 Micrel, Inc. Integrated PNP power bipolar transistor with low injection into substrate
US5214506A (en) * 1991-08-30 1993-05-25 Bell Communications Research, Inc. Low bit-rate video coding technique
US5351086A (en) * 1991-12-31 1994-09-27 Daewoo Electronics Co., Ltd. Low-bit rate interframe video encoder with adaptive transformation block selection
US5387553A (en) * 1992-03-24 1995-02-07 International Business Machines Corporation Method for forming a lateral bipolar transistor with dual collector, circular symmetry and composite structure
US5253058A (en) * 1992-04-01 1993-10-12 Bell Communications Research, Inc. Efficient coding scheme for multilevel video transmission
KR950002658B1 (ko) * 1992-04-11 1995-03-24 주식회사금성사 영상신호의 압축 부호화 및 복호화장치
EP0608999B1 (en) * 1993-01-29 1997-03-26 National Semiconductor Corporation Bipolar transistors and methods for fabrication thereof
US5389552A (en) * 1993-01-29 1995-02-14 National Semiconductor Corporation Transistors having bases with different shape top surfaces
JPH0786296A (ja) * 1993-09-10 1995-03-31 Toshiba Corp 高速バイポーラトランジスタの製造方法
US5717241A (en) * 1993-12-09 1998-02-10 Northern Telecom Limited Gate controlled lateral bipolar junction transistor
US5548158A (en) * 1994-09-02 1996-08-20 National Semiconductor Corporation Structure of bipolar transistors with improved output current-voltage characteristics
US5581115A (en) * 1994-10-07 1996-12-03 National Semiconductor Corporation Bipolar transistors using isolated selective doping to improve performance characteristics

Also Published As

Publication number Publication date
KR960019765A (ko) 1996-06-17
US5675386A (en) 1997-10-07
US5989968A (en) 1999-11-23
JPH08227899A (ja) 1996-09-03
EP0715356B1 (en) 2002-02-06
DE69525316T2 (de) 2002-08-29
DE69525316D1 (de) 2002-03-21
KR0151011B1 (ko) 1998-10-01
EP0715356A1 (en) 1996-06-05

Similar Documents

Publication Publication Date Title
FR2715984B1 (zh)
TW275088B (zh)
BR9508234A (zh)
TW280065B (zh)
EP0718614A3 (zh)
TW274119B (zh)
FR2720969B1 (zh)
TW265452B (zh)
EP0666470A3 (zh)
EP0665261A3 (zh)
TW288173B (zh)
EP0713889A3 (zh)
FR2728318B1 (zh)
TW267990B (zh)
DK0685247T3 (zh)
BY1704C1 (zh)
TW274105B (zh)
FR2721180B1 (zh)
BR7402039U (zh)
ECSDI940183S (zh)
BRPI9401073A2 (zh)
IN179249B (zh)
ECSDI940187S (zh)
BR7402097U (zh)
CU22450A3 (zh)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees