Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mos Electronics Taiwan IncfiledCriticalMos Electronics Taiwan Inc
Priority to TW85100504ApriorityCriticalpatent/TW283787B/en
Application grantedgrantedCritical
Publication of TW283787BpublicationCriticalpatent/TW283787B/en
A process of golden wafer by barrier film comprises the steps of: supplying one silicon wafer; depositing one boronphosphosilicate glass(BPSG) or one phosphosilicate glass(PSG) on the above silicon wafer by chemical vapor deposition; depositing one barrier film such as Si3N4 etc. on the BPSG or PSG film to complete the process of golden wafer.
TW85100504A1996-01-161996-01-16Golden wafer process
TW283787B
(en)