TW273037B - Fabricating method for T shaped capacitor of IC - Google Patents

Abstract

A fabricating method for T shaped capacitor of IC comprises the steps of: forming field oxide needed by isolation active area; forming field effect transistor including gate dielectric, gate electrode, spacer and source/drain; depositing the first isolation and the second isolation; with lithography defining photoresist pattern of node contact; anisotropically etching one portion of the above second isolation; with oxygen plasma laterally etching one portion of the above photoresist pattern; with plasma etch anisotropically etching the above first isolation and one portion of the above second isolation, to form ladder-shaped node contact; depositing one doped first polysilicon layer that will fill up the above ladder-shaped node contact; with plasma etch anisotropically etching back the above doped first polysilicon layer, and stopping one the above second isolation surface, to form polysilicon plug in the above ladder-shaped node contact; etching the above second isolation; forming one very thin capacitor dielectric; forming one doped second polysilicon layer, and defining plate electrode of capacitor.