TW241381B - - Google Patents

Info

Publication number: TW241381B
Authority: TW; Taiwan

Application number

TW083104241A

Original Assignee

Zaidanhozin Handotai Kenkyu Shinkokai

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-05-12

Filing date

1994-05-11

Publication date

1995-02-21

1994-05-11 Application filed by Zaidanhozin Handotai Kenkyu Shinkokai filed Critical Zaidanhozin Handotai Kenkyu Shinkokai

1995-02-21 Application granted granted Critical

1995-02-21 Publication of TW241381B publication Critical patent/TW241381B/zh

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66356—Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8616—Charge trapping diodes

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Ceramic Engineering (AREA)
Manufacturing & Machinery (AREA)
Junction Field-Effect Transistors (AREA)
Semiconductor Memories (AREA)
Non-Volatile Memory (AREA)

TW083104241A 1993-05-12 1994-05-11 TW241381B (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP14712893		1993-05-12

Publications (1)

Publication Number	Publication Date
TW241381B true TW241381B (zh)	1995-02-21

Family

ID=15423194

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW083104241A TW241381B (zh)	1993-05-12	1994-05-11

Country Status (5)

Country	Link
US (1)	US5485017A (zh)
EP (1)	EP0631326B1 (zh)
KR (1)	KR0157662B1 (zh)
DE (1)	DE69416619T2 (zh)
TW (1)	TW241381B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5665978A (en) *	1995-05-25	1997-09-09	Matsushita Electric Industrial Co., Ltd.	Nonlinear element and bistable memory device
JP3397516B2 (ja) *	1995-06-08	2003-04-14	三菱電機株式会社	半導体記憶装置及び半導体集積回路装置
EP0843360A1 (en) *	1996-11-15	1998-05-20	Hitachi Europe Limited	Memory device
JP3853905B2 (ja) *	1997-03-18	2006-12-06	株式会社東芝	量子効果装置とｂｌトンネル素子を用いた装置
US6421682B1 (en)	1999-07-26	2002-07-16	Microsoft Corporation	Catalog management system architecture having data table objects and logic table objects
KR101167651B1 (ko) *	2008-10-29	2012-07-20	후지쯔 가부시끼가이샤	화합물 반도체 장치 및 그 제조 방법
US10103226B2 (en) *	2012-04-30	2018-10-16	International Business Machines Corporation	Method of fabricating tunnel transistors with abrupt junctions
US9508854B2 (en)	2013-12-06	2016-11-29	Ecole Polytechnique Federale De Lausanne (Epfl)	Single field effect transistor capacitor-less memory device and method of operating the same
DE102016015475B3 (de) *	2016-12-28	2018-01-11	3-5 Power Electronics GmbH	IGBT Halbleiterstruktur
KR20180129457A (ko) *	2017-05-26	2018-12-05	에스케이하이닉스 주식회사	반도체 장치 및 그 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3972059A (en) *	1973-12-28	1976-07-27	International Business Machines Corporation	Dielectric diode, fabrication thereof, and charge store memory therewith
JPS5591166A (en) *	1978-12-28	1980-07-10	Nippon Gakki Seizo Kk	Semiconductor memory
JPS56124273A (en) *	1980-03-04	1981-09-29	Semiconductor Res Found	Semiconductor device
JPS5940576A (ja) *	1982-08-30	1984-03-06	Junichi Nishizawa	フオトサイリスタ
JPS60254777A (ja) *	1984-05-31	1985-12-16	Fujitsu Ltd	半導体装置
JPS61158184A (ja) *	1984-12-29	1986-07-17	Fujitsu Ltd	半導体装置
US5216262A (en) *	1992-03-02	1993-06-01	Raphael Tsu	Quantum well structures useful for semiconductor devices

1994
- 1994-05-10 DE DE69416619T patent/DE69416619T2/de not_active Expired - Fee Related
- 1994-05-10 EP EP94107261A patent/EP0631326B1/en not_active Expired - Lifetime
- 1994-05-11 TW TW083104241A patent/TW241381B/zh active
- 1994-05-11 US US08/241,447 patent/US5485017A/en not_active Expired - Lifetime
- 1994-05-12 KR KR1019940010400A patent/KR0157662B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
EP0631326B1 (en)	1999-02-24
EP0631326A3 (en)	1995-05-31
KR0157662B1 (ko)	1998-10-15
US5485017A (en)	1996-01-16
KR940027148A (ko)	1994-12-10
DE69416619D1 (de)	1999-04-01
DE69416619T2 (de)	1999-09-30
EP0631326A2 (en)	1994-12-28

Publication	Publication Date	Title
FR2706985B1 (zh)	1995-08-25
IN181732B (zh)	1998-09-12
FR2706820B1 (zh)	1995-12-08
TW241381B (zh)	1995-02-21
FR2701428B1 (zh)	1997-02-21
FR2706845B1 (zh)	1995-08-25
FR2706824B1 (zh)	1995-08-04
DK0648636T3 (zh)	1997-03-17
FR2707048B1 (zh)	1995-09-01
FR2706779B1 (zh)	1995-07-28
FR2706994B1 (zh)	1995-10-13
FR2706918B1 (zh)	1999-02-19
FR2706922B1 (zh)	1995-09-08
FR2706742B1 (zh)	1995-08-25
IN179833B (zh)	1997-12-20
IN176220B (zh)	1996-03-16
IN178517B (zh)	1997-05-03
GB9412707D0 (zh)	1994-08-17
IN180498B (zh)	1998-02-07
IN181260B (zh)	1998-05-02
IN186237B (zh)	2001-07-14
IN178630B (zh)	1997-05-24
ATA199793A (zh)	1995-01-15
IN178856B (zh)	1997-07-05
IN186252B (zh)	2001-07-21