TW234763B - - Google Patents
Info
- Publication number
- TW234763B TW234763B TW082106081A TW82106081A TW234763B TW 234763 B TW234763 B TW 234763B TW 082106081 A TW082106081 A TW 082106081A TW 82106081 A TW82106081 A TW 82106081A TW 234763 B TW234763 B TW 234763B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920013685A KR950008789B1 (ko) | 1992-07-30 | 1992-07-30 | 멀티-이씨씨(ecc)회로를 내장하는 반도체 메모리 장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW234763B true TW234763B (zh) | 1994-11-21 |
Family
ID=19337249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW082106081A TW234763B (zh) | 1992-07-30 | 1993-07-29 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5469450A (zh) |
EP (1) | EP0581602B1 (zh) |
JP (1) | JP3982641B2 (zh) |
KR (1) | KR950008789B1 (zh) |
CN (1) | CN1033607C (zh) |
DE (1) | DE69326511T2 (zh) |
RU (1) | RU2134916C1 (zh) |
TW (1) | TW234763B (zh) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5872802A (en) * | 1996-05-03 | 1999-02-16 | Cypress Semiconductor Corp. | Parity generation and check circuit and method in read data path |
US6397365B1 (en) * | 1999-05-18 | 2002-05-28 | Hewlett-Packard Company | Memory error correction using redundant sliced memory and standard ECC mechanisms |
KR100322542B1 (ko) * | 1999-08-11 | 2002-03-18 | 윤종용 | 파이프 라인상의 고속동작을 구현하는 ecc 회로를 구비하는동기식 반도체 메모리장치 및 이 동기식 반도체 메모리장치의 에러 체크 및 정정방법 |
US20030120858A1 (en) * | 2000-09-15 | 2003-06-26 | Matrix Semiconductor, Inc. | Memory devices and methods for use therewith |
US6591394B2 (en) | 2000-12-22 | 2003-07-08 | Matrix Semiconductor, Inc. | Three-dimensional memory array and method for storing data bits and ECC bits therein |
US6700827B2 (en) | 2001-02-08 | 2004-03-02 | Integrated Device Technology, Inc. | Cam circuit with error correction |
KR100440491B1 (ko) * | 2001-08-10 | 2004-07-15 | 김진수 | 새우 가공부산물을 사용한 발효 액젓과 그 제조 방법 |
US7219271B2 (en) * | 2001-12-14 | 2007-05-15 | Sandisk 3D Llc | Memory device and method for redundancy/self-repair |
US6901549B2 (en) * | 2001-12-14 | 2005-05-31 | Matrix Semiconductor, Inc. | Method for altering a word stored in a write-once memory device |
US6928590B2 (en) * | 2001-12-14 | 2005-08-09 | Matrix Semiconductor, Inc. | Memory device and method for storing bits in non-adjacent storage locations in a memory array |
US7301961B1 (en) | 2001-12-27 | 2007-11-27 | Cypress Semiconductor Corportion | Method and apparatus for configuring signal lines according to idle codes |
US6868022B2 (en) * | 2003-03-28 | 2005-03-15 | Matrix Semiconductor, Inc. | Redundant memory structure using bad bit pointers |
US6987684B1 (en) | 2003-07-15 | 2006-01-17 | Integrated Device Technology, Inc. | Content addressable memory (CAM) devices having multi-block error detection logic and entry selective error correction logic therein |
US7193876B1 (en) | 2003-07-15 | 2007-03-20 | Kee Park | Content addressable memory (CAM) arrays having memory cells therein with different susceptibilities to soft errors |
US6870749B1 (en) | 2003-07-15 | 2005-03-22 | Integrated Device Technology, Inc. | Content addressable memory (CAM) devices with dual-function check bit cells that support column redundancy and check bit cells with reduced susceptibility to soft errors |
US7304875B1 (en) | 2003-12-17 | 2007-12-04 | Integrated Device Technology. Inc. | Content addressable memory (CAM) devices that support background BIST and BISR operations and methods of operating same |
JP4041076B2 (ja) | 2004-02-27 | 2008-01-30 | 株式会社東芝 | データ記憶システム |
KR100632952B1 (ko) * | 2004-09-30 | 2006-10-11 | 삼성전자주식회사 | 정전으로 인한 프로그램 페일의 유무를 판별할 수 있는방법 및 장치 |
US7277336B2 (en) * | 2004-12-28 | 2007-10-02 | Sandisk 3D Llc | Method and apparatus for improving yield in semiconductor devices by guaranteeing health of redundancy information |
US7212454B2 (en) * | 2005-06-22 | 2007-05-01 | Sandisk 3D Llc | Method and apparatus for programming a memory array |
JP4790386B2 (ja) * | 2005-11-18 | 2011-10-12 | エルピーダメモリ株式会社 | 積層メモリ |
JP4846384B2 (ja) * | 2006-02-20 | 2011-12-28 | 株式会社東芝 | 半導体記憶装置 |
US7958390B2 (en) * | 2007-05-15 | 2011-06-07 | Sandisk Corporation | Memory device for repairing a neighborhood of rows in a memory array using a patch table |
US7966518B2 (en) * | 2007-05-15 | 2011-06-21 | Sandisk Corporation | Method for repairing a neighborhood of rows in a memory array using a patch table |
US8234539B2 (en) * | 2007-12-06 | 2012-07-31 | Sandisk Il Ltd. | Correction of errors in a memory array |
US8553441B1 (en) | 2010-08-31 | 2013-10-08 | Netlogic Microsystems, Inc. | Ternary content addressable memory cell having two transistor pull-down stack |
US8462532B1 (en) | 2010-08-31 | 2013-06-11 | Netlogic Microsystems, Inc. | Fast quaternary content addressable memory cell |
US8625320B1 (en) | 2010-08-31 | 2014-01-07 | Netlogic Microsystems, Inc. | Quaternary content addressable memory cell having one transistor pull-down stack |
US8582338B1 (en) | 2010-08-31 | 2013-11-12 | Netlogic Microsystems, Inc. | Ternary content addressable memory cell having single transistor pull-down stack |
US8837188B1 (en) | 2011-06-23 | 2014-09-16 | Netlogic Microsystems, Inc. | Content addressable memory row having virtual ground and charge sharing |
US8773880B2 (en) | 2011-06-23 | 2014-07-08 | Netlogic Microsystems, Inc. | Content addressable memory array having virtual ground nodes |
KR102048765B1 (ko) * | 2013-01-15 | 2020-01-22 | 삼성전자주식회사 | 메모리 시스템의 동작 방법 및 메모리 시스템 |
US9251915B2 (en) * | 2013-11-11 | 2016-02-02 | Advantest Corporation | Seamless fail analysis with memory efficient storage of fail lists |
KR101768741B1 (ko) * | 2013-11-29 | 2017-08-16 | 씨제이제일제당 (주) | 액젓의 제조방법 및 그 제조방법에 의해 제조된 액젓 |
US9800271B2 (en) | 2015-09-14 | 2017-10-24 | Qualcomm Incorporated | Error correction and decoding |
KR20170051039A (ko) * | 2015-11-02 | 2017-05-11 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 구동 방법 |
CN105895162B (zh) * | 2016-03-30 | 2019-10-11 | 上海华虹宏力半导体制造有限公司 | 只读存储器及其数据读取方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61134988A (ja) * | 1984-12-04 | 1986-06-23 | Toshiba Corp | 半導体メモリにおける誤り検出訂正機能制御系 |
JPS63129600A (ja) * | 1986-11-19 | 1988-06-01 | Nec Corp | 誤り検出・訂正回路付半導体記憶装置 |
JPS63285800A (ja) * | 1987-05-19 | 1988-11-22 | Fujitsu Ltd | 半導体メモリ装置 |
JPH01201736A (ja) * | 1988-02-08 | 1989-08-14 | Mitsubishi Electric Corp | マイクロコンピュータ |
JPH03217051A (ja) * | 1990-01-23 | 1991-09-24 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
US5134616A (en) * | 1990-02-13 | 1992-07-28 | International Business Machines Corporation | Dynamic ram with on-chip ecc and optimized bit and word redundancy |
JPH04332995A (ja) * | 1991-05-07 | 1992-11-19 | Sony Corp | 半導体記憶装置 |
US5282173A (en) * | 1991-05-07 | 1994-01-25 | Sony Corporation | Semiconductor memory device with high speed transmission of address signals between a predecoder and a main decoder |
KR960000681B1 (ko) * | 1992-11-23 | 1996-01-11 | 삼성전자주식회사 | 반도체메모리장치 및 그 메모리쎌 어레이 배열방법 |
-
1992
- 1992-07-30 KR KR1019920013685A patent/KR950008789B1/ko not_active IP Right Cessation
-
1993
- 1993-07-29 RU RU93046416A patent/RU2134916C1/ru not_active IP Right Cessation
- 1993-07-29 TW TW082106081A patent/TW234763B/zh active
- 1993-07-29 JP JP18817993A patent/JP3982641B2/ja not_active Expired - Lifetime
- 1993-07-30 CN CN93109191A patent/CN1033607C/zh not_active Expired - Fee Related
- 1993-07-30 EP EP93306029A patent/EP0581602B1/en not_active Expired - Lifetime
- 1993-07-30 DE DE69326511T patent/DE69326511T2/de not_active Expired - Fee Related
- 1993-07-30 US US08/099,331 patent/US5469450A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR940002864A (ko) | 1994-02-19 |
EP0581602A3 (en) | 1996-07-17 |
EP0581602B1 (en) | 1999-09-22 |
CN1083962A (zh) | 1994-03-16 |
DE69326511T2 (de) | 2000-05-04 |
CN1033607C (zh) | 1996-12-18 |
EP0581602A2 (en) | 1994-02-02 |
RU2134916C1 (ru) | 1999-08-20 |
KR950008789B1 (ko) | 1995-08-08 |
US5469450A (en) | 1995-11-21 |
DE69326511D1 (de) | 1999-10-28 |
JP3982641B2 (ja) | 2007-09-26 |
JPH06187795A (ja) | 1994-07-08 |