TW230843B - - Google Patents
Info
- Publication number
- TW230843B TW230843B TW082104256A TW82104256A TW230843B TW 230843 B TW230843 B TW 230843B TW 082104256 A TW082104256 A TW 082104256A TW 82104256 A TW82104256 A TW 82104256A TW 230843 B TW230843 B TW 230843B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920011008A KR950012555B1 (ko) | 1992-06-24 | 1992-06-24 | 메모리셀 캐패시터의 유전막 누설전류 개선방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW230843B true TW230843B (zh) | 1994-09-21 |
Family
ID=19335176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW082104256A TW230843B (zh) | 1992-06-24 | 1993-05-28 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH0689968A (zh) |
KR (1) | KR950012555B1 (zh) |
DE (1) | DE4320089B4 (zh) |
TW (1) | TW230843B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6548854B1 (en) | 1997-12-22 | 2003-04-15 | Agere Systems Inc. | Compound, high-K, gate and capacitor insulator layer |
EP0851473A3 (en) * | 1996-12-23 | 1998-07-22 | Lucent Technologies Inc. | Method of making a layer with high dielectric K, gate and capacitor insulator layer and device |
KR19980060601A (ko) * | 1996-12-31 | 1998-10-07 | 김영환 | 반도체 소자의 캐패시터 제조방법 |
JP4353665B2 (ja) * | 2001-10-31 | 2009-10-28 | 三洋アクアテクノ株式会社 | 濾過装置 |
KR20040019512A (ko) | 2002-08-28 | 2004-03-06 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
US9868902B2 (en) | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6338248A (ja) * | 1986-08-04 | 1988-02-18 | Hitachi Ltd | 半導体装置およびその製造方法 |
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1992
- 1992-06-24 KR KR1019920011008A patent/KR950012555B1/ko not_active IP Right Cessation
-
1993
- 1993-05-28 TW TW082104256A patent/TW230843B/zh not_active IP Right Cessation
- 1993-06-17 DE DE4320089A patent/DE4320089B4/de not_active Expired - Fee Related
- 1993-06-24 JP JP5153478A patent/JPH0689968A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE4320089A1 (de) | 1994-01-05 |
JPH0689968A (ja) | 1994-03-29 |
KR950012555B1 (ko) | 1995-10-18 |
DE4320089B4 (de) | 2007-05-03 |
KR940001405A (ko) | 1994-01-11 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |