TW202422791A

TW202422791A - Electronic device

Info

Publication number: TW202422791A
Application number: TW111143661A
Authority: TW
Inventors: 黃進明; 王程麒; 林冠斈
Original assignee: 群創光電股份有限公司
Filing date: 2022-11-16
Publication date: 2024-06-01

Abstract

An electronic device is disclosed. The electronic device includes a circuit structure, a bonding element and an electronic unit. The circuit structure includes a conductive pad, and the conductive pad has an accommodating groove. At least a portion of the bonding element is disposed in the accommodating groove. The electronic unit is electrically connected to the conductive pad through the bonding element. The accommodating groove has a bottom surface and an opening opposite to the bottom surface, and a width of the bottom surface is greater than a width of the opening.

Description

電子裝置Electronic devices

本揭露涉及一種電子裝置，特別是涉及一種包括具有容置槽的導電墊的電子裝置。The present disclosure relates to an electronic device, and more particularly to an electronic device including a conductive pad having a receiving groove.

近年來，電子裝置中的電子元件逐漸趨向小型化與高密集化，為此發展出多樣化的電子元件封裝技術。然而，在習知技術中，電子裝置中的元件彼此對位相接時，可能會造成位移或公差，而使得接合後裝置的電性與可靠度表現不佳。In recent years, electronic components in electronic devices have gradually become smaller and more dense, and a variety of electronic component packaging technologies have been developed. However, in the prior art, when components in electronic devices are aligned and connected to each other, displacement or tolerance may occur, resulting in poor electrical performance and reliability of the device after bonding.

本揭露的目的之一在於提供一種電子裝置，以解決現有電子裝置所遭遇的問題，透過導電墊的結構設計，可提升元件之間的對位精準度，進而提升電子裝置的可靠度。One of the purposes of the present disclosure is to provide an electronic device to solve the problems encountered by the existing electronic devices. Through the structural design of the conductive pad, the alignment accuracy between components can be improved, thereby improving the reliability of the electronic device.

本揭露的一實施例提供一種電子裝置，電子裝置包括電路結構、接合元件以及電子單元。電路結構包括導電墊，其中導電墊具有容置槽。至少部分的接合元件設置在容置槽中。電子單元透過接合元件電性連接導電墊。其中，容置槽具有底面以及與底面相對的開口，且底面的寬度大於開口的寬度。An embodiment of the present disclosure provides an electronic device, which includes a circuit structure, a bonding element, and an electronic unit. The circuit structure includes a conductive pad, wherein the conductive pad has a receiving groove. At least part of the bonding element is disposed in the receiving groove. The electronic unit is electrically connected to the conductive pad through the bonding element. The receiving groove has a bottom surface and an opening opposite to the bottom surface, and the width of the bottom surface is greater than the width of the opening.

下文結合具體實施例和附圖對本揭露的內容進行詳細描述，須注意的是，為了使讀者能容易瞭解及圖式的簡潔，本揭露中的多張圖式只繪出裝置的一部分，且圖式中的特定元件並非依照實際比例繪圖。此外，圖中各元件的數量及尺寸僅作為示意，並非用來限制本揭露的範圍。The following is a detailed description of the contents of the present disclosure in conjunction with specific embodiments and drawings. It should be noted that, in order to facilitate the reader's understanding and simplify the drawings, the multiple drawings in the present disclosure only depict a portion of the device, and the specific elements in the drawings are not drawn according to the actual scale. In addition, the number and size of each element in the drawing are only for illustration and are not used to limit the scope of the present disclosure.

本揭露通篇說明書與申請專利範圍中會使用某些詞彙來指稱特定元件。本領域技術人員應理解，電子設備製造商可能會以不同的名稱來指稱相同的元件。本文並不意在區分那些功能相同但名稱不同的元件。在下文說明書與申請專利範圍中，「含有」與「包括」等詞為開放式詞語，因此其應被解釋為「含有但不限定為…」之意。當在本說明書中使用術語「包含」、「包括」和/或「具有」時，其指定了所述特徵、區域、步驟、操作和/或元件的存在，但並不排除一個或多個其他特徵、區域、步驟、操作、元件和/或其組合的存在或增加。Certain terms are used throughout the specification and patent application to refer to specific components. It should be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. This document is not intended to distinguish between components that have the same function but different names. In the following specification and patent application, the words "contain" and "include" are open-ended words, so they should be interpreted as "contains but is not limited to..." When the terms "include", "include" and/or "have" are used in this specification, they specify the presence of the features, regions, steps, operations and/or elements, but do not exclude the presence or addition of one or more other features, regions, steps, operations, elements and/or combinations thereof.

當元件或膜層被稱為在另一個元件或膜層「上」或「連接到」另一個元件或膜層時，它可以直接在此另一元件或膜層上或直接連接到此另一元件或膜層，或者兩者之間存在有***的元件或膜層。相反地，當元件被稱為「直接」在另一個元件或膜層「上」或「直接連接到」另一個元件或膜層時，兩者之間不存在有***的元件或膜層。When an element or a layer is referred to as being "on" or "connected to" another element or layer, it may be directly on or directly connected to the other element or layer, or there may be intervening elements or layers therebetween. Conversely, when an element is referred to as being "directly on" or "directly connected to" another element or layer, there may be no intervening elements or layers therebetween.

本文中所提到的方向用語，例如：「上」、「下」、「前」、「後」、「左」、「右」等，僅是參考附圖的方向。因此，使用的方向用語是用來說明，而並非用來限制本揭露。The directional terms mentioned in this article, such as "up", "down", "front", "back", "left", "right", etc., are only with reference to the directions of the accompanying drawings. Therefore, the directional terms used are used for explanation, and are not used to limit the present disclosure.

術語「大約」、「等於」、「相等」或「相同」、「實質上」或「大致上」一般解釋為在所給定的值或範圍的20%以內，或解釋為在所給定的值或範圍的10%、5%、3%、2%、1%或0.5%以內。The terms "approximately," "equal to," "equal" or "same," "substantially" or "substantially" are generally interpreted as being within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1% or 0.5% of a given value or range.

說明書與申請專利範圍中所使用的序數例如「第一」、「第二」等之用詞用以修飾元件，其本身並不意含及代表該(或該些)元件有任何之前的序數，也不代表某一元件與另一元件的順序、或是製造方法上的順序，該些序數的使用僅用來使具有某命名的元件得以和另一具有相同命名的元件能作出清楚區分。申請專利範圍與說明書中可不使用相同用詞，據此，說明書中的第一構件在申請專利範圍中可能為第二構件。The ordinal numbers used in the specification and patent application, such as "first", "second", etc., are used to modify the components. They do not imply or represent any previous ordinal number of the component (or components), nor do they represent the order of one component to another component, or the order of the manufacturing method. The use of these ordinal numbers is only used to make a component with a certain name clearly distinguishable from another component with the same name. The patent application and the specification may not use the same terms. Accordingly, the first component in the specification may be the second component in the patent application.

本揭露所述的電子裝置可包括半導體裝置、封裝裝置、顯示裝置、發光裝置、背光裝置、太陽能電池(solar cell)、感測裝置、天線裝置、車用裝置或高頻裝置，但不以此為限。電子裝置可為可彎折或可撓式電子裝置。顯示裝置可為非自發光型顯示裝置或自發光型顯示裝置。天線裝置可為液晶型態的天線裝置或非液晶型態的天線裝置，感測裝置可為感測電容、光線、熱能或超聲波的感測裝置，但不以此為限。電子裝置可例如包括被動元件與主動元件等電子元件，例如電容、電阻、電感、二極體、電晶體等。需注意的是，電子裝置可為前述之任意排列組合，但不以此為限。The electronic devices described in the present disclosure may include semiconductor devices, packaging devices, display devices, light-emitting devices, backlight devices, solar cells, sensing devices, antenna devices, automotive devices or high-frequency devices, but are not limited thereto. The electronic device may be a bendable or flexible electronic device. The display device may be a non-self-luminous display device or a self-luminous display device. The antenna device may be a liquid crystal antenna device or a non-liquid crystal antenna device, and the sensing device may be a sensing device for sensing capacitance, light, heat or ultrasound, but are not limited thereto. The electronic device may, for example, include electronic components such as passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. It should be noted that the electronic device may be any combination of the aforementioned arrangements, but is not limited thereto.

須知悉的是，在不脫離本揭露的精神下，可將數個不同實施例中的特徵進行替換、重組、混合以完成其他實施例。It should be understood that features of several different embodiments may be replaced, reorganized, or mixed to implement other embodiments without departing from the spirit of the present disclosure.

請參考圖1與圖2。圖1為本揭露一實施例的電子裝置的剖面示意圖。圖2為圖1所示導電墊與接合元件的局部放大示意圖。如圖1與圖2所示，本揭露一實施例的電子裝置ED可包括電路結構100、接合元件200以及電子單元300。電路結構100包括導電墊110，其中導電墊110具有容置槽120。具體而言，電路結構100可包括在方向Y上堆疊的至少一層導電層112(例如導電層112a與導電層112b)、至少一層絕緣層114(例如絕緣層114a與絕緣層114b)以及一個或多個導電墊110。導電墊110可設置在最上層的絕緣層114上並電性連接電路結構100中最上層的導電層112，例如設置在絕緣層114b上並電性連接導電層112b，但不以此為限。電路結構100可為重佈線層(redistribution layer，RDL)，以使線路重佈，例如可透過金屬佈線製程改變線路接點位置或提升線路扇出(fan out)面積，但不以此為限。在本揭露中，方向Y可為電子裝置ED的法線方向，亦即相反於電子裝置ED的俯視方向，而方向X可平行於水平方向，亦即平行於電子單元300的一表面(例如上表面或下表面)，而方向Y垂直於方向X，但不以此為限。Please refer to FIG. 1 and FIG. 2. FIG. 1 is a cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure. FIG. 2 is a partially enlarged schematic diagram of the conductive pad and the bonding element shown in FIG. 1. As shown in FIG. 1 and FIG. 2, the electronic device ED according to an embodiment of the present disclosure may include a circuit structure 100, a bonding element 200, and an electronic unit 300. The circuit structure 100 includes a conductive pad 110, wherein the conductive pad 110 has a receiving groove 120. Specifically, the circuit structure 100 may include at least one conductive layer 112 (e.g., conductive layer 112a and conductive layer 112b) stacked in the direction Y, at least one insulating layer 114 (e.g., insulating layer 114a and insulating layer 114b), and one or more conductive pads 110. The conductive pad 110 may be disposed on the uppermost insulating layer 114 and electrically connected to the uppermost conductive layer 112 in the circuit structure 100, for example, disposed on the insulating layer 114b and electrically connected to the conductive layer 112b, but is not limited thereto. The circuit structure 100 may be a redistribution layer (RDL) to redistribute the circuits, for example, the circuit contact position may be changed or the circuit fan-out area may be increased through a metal wiring process, but the invention is not limited thereto. In the present disclosure, the direction Y may be the normal direction of the electronic device ED, that is, opposite to the top view direction of the electronic device ED, and the direction X may be parallel to the horizontal direction, that is, parallel to a surface (such as the upper surface or the lower surface) of the electronic unit 300, and the direction Y is perpendicular to the direction X, but the invention is not limited thereto.

在一些實施例中，可在方向Y上依序交替形成圖案化的導電層112a、絕緣層114a、導電層112b及絕緣層114b，再將導電墊110形成在絕緣層114b上或是絕緣層114b的凹槽114G中，以構成電路結構100。絕緣層114中可包括一個或多個連接孔，導電層112a、導電層112b及導電墊110可透過連接孔而電連接，但不以此為限。導電墊110可例如但不限於為凸塊底層金屬(under-bump metallization，UBM)。導電墊110可包括銅、鎳、金、銀、鈦、其他合適的導電材料或上述材料的組合，例如為在導電墊110進行對接時的溫度與壓力(例如200-400°C與1-100MPa)下可產生機械形變的材料，但不以此為限。導電墊110與導電層112可分別為單層結構或多層堆疊結構。導電墊110的材料可相同或不同於導電層112的材料。導電層112可包括鈦、銅、鋁、錫、鎳、金或銀等金屬材料或其他合適的導電材料。絕緣層114可包括有機材料或無機材料。有機材料例如包括聚醯亞胺(polyimide，PI)、感光型聚醯亞胺(photosensitive polyimide，PSPI)、環氧樹脂(epoxy)、Ajinomoto增層膜(Ajinomoto build-up film，ABF)材料或其他合適的材料，無機材料例如包括氧化矽(silicon oxide，SiOx)、氮化矽(silicon nitride，SiNx)或其他合適的材料，但不以此為限。電路結構100還可包括主動元件及/或被動元件，例如二極體、電晶體、電容、電阻、電感、天線單元，並可電性連接於導電層112形成的導線等。電晶體例如包括薄膜電晶體(thin film transistor，TFT)，薄膜電晶體可包括閘極、源極、汲極及半導體層，但不以此為限。In some embodiments, a patterned conductive layer 112a, an insulating layer 114a, a conductive layer 112b, and an insulating layer 114b may be alternately formed in sequence in the direction Y, and then a conductive pad 110 may be formed on the insulating layer 114b or in the groove 114G of the insulating layer 114b to form the circuit structure 100. The insulating layer 114 may include one or more connection holes, and the conductive layer 112a, the conductive layer 112b, and the conductive pad 110 may be electrically connected through the connection holes, but the present invention is not limited thereto. The conductive pad 110 may be, for example, but not limited to, an under-bump metallization (UBM). The conductive pad 110 may include copper, nickel, gold, silver, titanium, other suitable conductive materials or a combination of the above materials, for example, a material that can produce mechanical deformation under the temperature and pressure (for example, 200-400°C and 1-100MPa) when the conductive pad 110 is docked, but is not limited to this. The conductive pad 110 and the conductive layer 112 may be a single-layer structure or a multi-layer stacked structure respectively. The material of the conductive pad 110 may be the same as or different from the material of the conductive layer 112. The conductive layer 112 may include metal materials such as titanium, copper, aluminum, tin, nickel, gold or silver, or other suitable conductive materials. The insulating layer 114 may include an organic material or an inorganic material. Organic materials include, for example, polyimide (PI), photosensitive polyimide (PSPI), epoxy, Ajinomoto build-up film (ABF) material or other suitable materials, and inorganic materials include, for example, silicon oxide (SiOx), silicon nitride (SiNx) or other suitable materials, but are not limited thereto. The circuit structure 100 may also include active components and/or passive components, such as diodes, transistors, capacitors, resistors, inductors, antenna units, and may be electrically connected to wires formed by the conductive layer 112. Transistors include, for example, thin film transistors (TFTs), which may include gates, sources, drains, and semiconductor layers, but are not limited thereto.

至少部分的接合元件200設置在導電墊110的容置槽120中，且電子單元300透過接合元件200電性連接導電墊110，從而使電子單元300與電路結構100電性連接。具體而言，電子裝置ED可包括一個或多個接合元件200，接合元件200的其中一個的至少一部分可對應設置在導電墊110的容置槽120中並與導電墊110相接，使得電子單元300可透過接合元件200電性連接導電墊110。接合元件200可例如為柱體(pillar)、凸塊(bump)、焊球(solder ball)或接墊(pad)，接合元件200可包括銅、錫、鎳、金、鉛、鋁、其他合適的導電材料或上述材料的組合，但不以此為限。電子單元300可例如為印刷電路板(printed circuit board，PCB)、晶粒(die)、晶片(chip)、積體電路(IC)、二極體、電容、電阻或其他合適的主動元件或被動元件，但不以此為限。At least a portion of the bonding element 200 is disposed in the receiving groove 120 of the conductive pad 110, and the electronic unit 300 is electrically connected to the conductive pad 110 through the bonding element 200, so that the electronic unit 300 is electrically connected to the circuit structure 100. Specifically, the electronic device ED may include one or more bonding elements 200, and at least a portion of one of the bonding elements 200 may be correspondingly disposed in the receiving groove 120 of the conductive pad 110 and connected to the conductive pad 110, so that the electronic unit 300 may be electrically connected to the conductive pad 110 through the bonding element 200. The bonding element 200 may be, for example, a pillar, a bump, a solder ball or a pad, and may include copper, tin, nickel, gold, lead, aluminum, other suitable conductive materials or a combination of the above materials, but not limited thereto. The electronic unit 300 may be, for example, a printed circuit board (PCB), a die, a chip, an integrated circuit (IC), a diode, a capacitor, a resistor or other suitable active or passive components, but not limited thereto.

根據本揭露實施例，導電墊110的容置槽120具有底面122以及與底面122相對的開口124，且底面122的寬度W1大於開口124的寬度W2。本揭露中所指“容置槽的底面的寬度”可表示在方向X上由容置槽的底面的一端量測到另一端所得到的寬度，而所指“容置槽的開口的寬度”可表示在方向X上由容置槽的開口的一端量測到另一端所得到的最小寬度。舉例而言，如圖2所示，容置槽120是形成在導電墊110的上表面110a的凹槽，容置槽120可具有底面122、開口124及側壁126，開口124與底面122相對，且側壁126與底面122相接。其中，可在方向X上由容置槽120的底面122一端量測到另一端以得到寬度W1，且可在方向X上由容置槽120的開口124的一端量測到另一端以得到最小寬度W2。並且，底面122的寬度W1大於開口124的寬度W2(即W1＞W2)。透過使接合元件200的至少一部分設置在具有下部寬度W1大於上部寬度W2的容置槽120中，可提升接合元件200與導電墊110之間的對位精準度，減少接合元件200位移，進而提升電子裝置ED的可靠度。According to the disclosed embodiment, the receiving groove 120 of the conductive pad 110 has a bottom surface 122 and an opening 124 opposite to the bottom surface 122, and the width W1 of the bottom surface 122 is greater than the width W2 of the opening 124. The "width of the bottom surface of the receiving groove" referred to in the disclosure may refer to the width measured from one end of the bottom surface of the receiving groove to the other end in the direction X, and the "width of the opening of the receiving groove" may refer to the minimum width measured from one end of the opening of the receiving groove to the other end in the direction X. For example, as shown in FIG. 2 , the receiving groove 120 is a groove formed on the upper surface 110a of the conductive pad 110. The receiving groove 120 may have a bottom surface 122, an opening 124, and a side wall 126. The opening 124 is opposite to the bottom surface 122, and the side wall 126 is connected to the bottom surface 122. The width W1 can be measured from one end of the bottom surface 122 of the receiving groove 120 to the other end in the direction X, and the minimum width W2 can be measured from one end of the opening 124 of the receiving groove 120 to the other end in the direction X. In addition, the width W1 of the bottom surface 122 is greater than the width W2 of the opening 124 (i.e., W1>W2). By disposing at least a portion of the bonding element 200 in the receiving groove 120 having a lower width W1 greater than an upper width W2, the alignment accuracy between the bonding element 200 and the conductive pad 110 can be improved, the displacement of the bonding element 200 can be reduced, and the reliability of the electronic device ED can be improved.

在如圖2所示的實施例中，容置槽120的深度T1可小於導電墊110的厚度T2(即T1＜T2)，在一些實施例中，容置槽120的深度T1可小於或等於導電墊110的厚度T2的三分之二，以使容置槽120可容置至少部分的接合元件200，進而提升對位精準度，但不以此為限。其中，可例如在方向Y上由開口124量測到底面122以得到容置槽120的深度T1，且可在方向Y上由導電墊110的上表面110a量測到與上表面相對的下表面110b以得到導電墊110的厚度T2，但不以此為限。In the embodiment shown in FIG. 2 , the depth T1 of the receiving groove 120 may be less than the thickness T2 of the conductive pad 110 (i.e., T1<T2). In some embodiments, the depth T1 of the receiving groove 120 may be less than or equal to two-thirds of the thickness T2 of the conductive pad 110, so that the receiving groove 120 can accommodate at least a portion of the bonding element 200, thereby improving the alignment accuracy, but the present invention is not limited thereto. For example, the depth T1 of the receiving groove 120 may be obtained by measuring from the opening 124 to the bottom surface 122 in the direction Y, and the thickness T2 of the conductive pad 110 may be obtained by measuring from the upper surface 110a of the conductive pad 110 to the lower surface 110b opposite to the upper surface in the direction Y, but the present invention is not limited thereto.

在一些實施例中，在如圖2所示的剖視圖中，導電墊110的邊緣110e與容置槽120的底面122之間的最短距離為第一距離H1，導電墊100的邊緣110e與容置槽120的開口124之間的最短距離為第二距離H2，且第一距離H1小於第二距離H2(即H1＜H2)。也就是說，在方向X上，導電墊110的邊緣110e與底面122鄰近邊緣110e的一端之間具有第一距離H1，且導電墊110的邊緣110e與開口124鄰近邊緣110e的一端之間具有第二距離H2，其中第一距離H1小於第二距離H2。In some embodiments, in the cross-sectional view shown in FIG. 2 , the shortest distance between the edge 110e of the conductive pad 110 and the bottom surface 122 of the receiving groove 120 is a first distance H1, the shortest distance between the edge 110e of the conductive pad 100 and the opening 124 of the receiving groove 120 is a second distance H2, and the first distance H1 is smaller than the second distance H2 (i.e., H1<H2). That is, in direction X, there is a first distance H1 between the edge 110e of the conductive pad 110 and one end of the bottom surface 122 adjacent to the edge 110e, and there is a second distance H2 between the edge 110e of the conductive pad 110 and one end of the opening 124 adjacent to the edge 110e, wherein the first distance H1 is smaller than the second distance H2.

在一些實施例中，如圖2所示，容置槽120的側壁126與底面122之間具有夾角θ，且夾角θ可小於90度。根據一些實施例，夾角θ為容置槽120的側壁126延伸線與底面122延伸線所定義。在一些實施例中，容置槽120的寬度可由底面122往開口124漸減，即側壁126可為斜壁，而底面122的寬度W1為容置槽120的最大寬度，開口124的寬度W2為容置槽120的最小寬度，使得容置槽120可例如具有梯形的剖視形狀，亦即容置槽120的底面122面積大於開口124的面積，但不以此為限。In some embodiments, as shown in FIG2 , there is an angle θ between the sidewall 126 and the bottom surface 122 of the receiving groove 120 , and the angle θ may be less than 90 degrees. According to some embodiments, the angle θ is defined by an extension line of the sidewall 126 and the bottom surface 122 of the receiving groove 120 . In some embodiments, the width of the accommodating groove 120 may gradually decrease from the bottom surface 122 to the opening 124, that is, the side wall 126 may be an inclined wall, and the width W1 of the bottom surface 122 is the maximum width of the accommodating groove 120, and the width W2 of the opening 124 is the minimum width of the accommodating groove 120, so that the accommodating groove 120 may have a trapezoidal cross-sectional shape, that is, the area of the bottom surface 122 of the accommodating groove 120 is larger than the area of the opening 124, but not limited to this.

根據如圖2所示導電墊110的結構設計，導電墊110可接觸接合元件200，使得接合元件200可嵌入導電墊110的容置槽120中，即導電墊110的容置槽120的上部(例如開口124處邊緣)可與接合元件200相接觸，以固定接合元件200，從而可提升接合元件200與導電墊110之間的對位精準度。此外，由於導電墊110可接觸接合元件200，使得導電墊110整體的尺寸不需要太大就足以與接合元件200相接，亦即可使導電墊110整體的尺寸減少，例如導電墊110整體的寬度W3可較小，從而可減少導電墊110在結構中所占空間，以使扇出線路的設計可具有更多彈性。另一方面，由於導電墊110的尺寸減少，能夠節省其材料成本。According to the structural design of the conductive pad 110 as shown in FIG. 2 , the conductive pad 110 can contact the bonding element 200, so that the bonding element 200 can be embedded in the receiving groove 120 of the conductive pad 110, that is, the upper portion of the receiving groove 120 of the conductive pad 110 (e.g., the edge of the opening 124) can contact the bonding element 200 to fix the bonding element 200, thereby improving the alignment accuracy between the bonding element 200 and the conductive pad 110. In addition, since the conductive pad 110 can contact the bonding element 200, the size of the conductive pad 110 as a whole does not need to be too large to be connected to the bonding element 200, that is, the size of the conductive pad 110 as a whole can be reduced, for example, the width W3 of the conductive pad 110 as a whole can be smaller, thereby reducing the space occupied by the conductive pad 110 in the structure, so that the design of the fan-out circuit can have more flexibility. On the other hand, since the size of the conductive pad 110 is reduced, its material cost can be saved.

在一些實施例中，如圖1與圖2所示，接合元件200可包括接合部210及導電柱220，導電柱220位在電子單元300與接合部210之間，且容置槽120的深度T1可大於或等於接合部210的厚度T3。其中，可例如在方向Y上由接合部210的上表面(例如接合部210與導電柱220之間的界面I)量測到接合部210最靠近容置槽120的底面122的一端以得到接合部210的厚度T3。接合部210可包括焊料(solder)，例如但不限於錫、鎵、鎳、金、銅、鋁、銀、在接合元件200進行對接時的溫度(例如200-400°C)下可熔化的其他材料或上述材料的組合，使得接合部210可填充容置槽120的至少一部分，即一部分的容置槽120可被接合部210所填充(如圖1所示)，或者整個容置槽120可被接合部210所填充(如圖3所示)。由於接合部210設置在容置槽120中，使得接合部210的尺寸不需要太大就足以使接合元件200與導電墊110充分相接，亦即可使接合部210的尺寸減少，能夠節省其材料成本。In some embodiments, as shown in FIG. 1 and FIG. 2 , the bonding element 200 may include a bonding portion 210 and a conductive pillar 220, the conductive pillar 220 is located between the electronic unit 300 and the bonding portion 210, and the depth T1 of the receiving groove 120 may be greater than or equal to the thickness T3 of the bonding portion 210. The thickness T3 of the bonding portion 210 may be obtained by measuring, for example, from the upper surface of the bonding portion 210 (e.g., the interface I between the bonding portion 210 and the conductive pillar 220) in the direction Y to the end of the bonding portion 210 closest to the bottom surface 122 of the receiving groove 120. The joint portion 210 may include solder, such as but not limited to tin, gallium, nickel, gold, copper, aluminum, silver, other materials that can be melted at the temperature (e.g., 200-400° C.) at which the joint element 200 is connected, or a combination of the above materials, so that the joint portion 210 can fill at least a portion of the receiving groove 120, that is, a portion of the receiving groove 120 can be filled by the joint portion 210 (as shown in FIG. 1 ), or the entire receiving groove 120 can be filled by the joint portion 210 (as shown in FIG. 3 ). Since the joint portion 210 is disposed in the receiving groove 120, the size of the joint portion 210 does not need to be too large to fully connect the joint element 200 with the conductive pad 110, that is, the size of the joint portion 210 can be reduced, which can save its material cost.

導電柱220可包括銅、鎳、金、銀、其他合適的導電材料或上述材料的組合，例如為在接合元件200進行對接時的溫度下不會熔化的材料，但不以此為限。當容置槽120的深度T1大於接合部210的厚度T3時，接合部210與導電柱220之間的界面I可低於容置槽120的上表面110a，使得接合部210設置在容置槽120中，且導電墊110可接觸部分的導電柱220，即容置槽120的上部(例如開口124處邊緣)與導電柱220相接觸，以固定接合元件200。The conductive pillar 220 may include copper, nickel, gold, silver, other suitable conductive materials or a combination of the above materials, for example, a material that does not melt at the temperature at which the bonding element 200 is connected, but is not limited thereto. When the depth T1 of the receiving groove 120 is greater than the thickness T3 of the bonding portion 210, the interface I between the bonding portion 210 and the conductive pillar 220 may be lower than the upper surface 110a of the receiving groove 120, so that the bonding portion 210 is disposed in the receiving groove 120, and the conductive pad 110 may contact part of the conductive pillar 220, that is, the upper portion of the receiving groove 120 (for example, the edge of the opening 124) contacts the conductive pillar 220, so as to fix the bonding element 200.

請參考圖3，其為本揭露另一實施例的電子裝置的剖面示意圖。如圖3所示，在一些實施例中，接合元件200的接合部210可填充容置槽120至少90%以上的空間。舉例而言，在經過製程(例如但不限於潤濕製程(wetting process))的反應之後，接合元件200的接合部210可完全填滿容置槽120，而使得接合元件200與容置槽120之間不具有空隙，但不以此為限。在如圖3所示的剖面圖中，導電墊110的容置槽120與接合元件200的接合部210的交界處(例如容置槽120與接合部210之間的界面I1)可例如呈弧形，但不以此為限。在一些實施例中，接合元件200的接合部210與導電墊110還可例如但不限於形成金屬間化合物(intermetallic compound，IMC)結構。根據圖3所示實施例，透過部分的接合元件200(例如接合部210)設置在容置槽120中，可增加接合元件200與導電墊110之間的接觸面積，以減少反應後因兩者接觸面積不足而造成接觸不良等風險，或者能夠節省其材料成本，但不以此為限。Please refer to FIG. 3 , which is a cross-sectional schematic diagram of an electronic device according to another embodiment of the present disclosure. As shown in FIG. 3 , in some embodiments, the joint portion 210 of the joint element 200 may fill at least 90% of the space of the receiving groove 120 . For example, after a reaction through a process (such as but not limited to a wetting process), the joint portion 210 of the joint element 200 may completely fill the receiving groove 120 , so that there is no gap between the joint element 200 and the receiving groove 120 , but the present invention is not limited thereto. In the cross-sectional diagram shown in FIG. 3 , the junction between the receiving groove 120 of the conductive pad 110 and the joint portion 210 of the joint element 200 (such as the interface I1 between the receiving groove 120 and the joint portion 210 ) may be, for example, arc-shaped, but the present invention is not limited thereto. In some embodiments, the joint portion 210 of the joint element 200 and the conductive pad 110 may also form an intermetallic compound (IMC) structure, for example but not limited to. According to the embodiment shown in FIG. 3 , by disposing a portion of the joint element 200 (such as the joint portion 210) in the receiving groove 120, the contact area between the joint element 200 and the conductive pad 110 may be increased to reduce the risk of poor contact due to insufficient contact area between the two after the reaction, or to save the material cost, but not limited to this.

根據上述導電墊110的結構與接合元件200包括接合部210及導電柱220的結構，在一些實施例的電子裝置ED的製程中，在將電子單元300透過接合元件200電性連接導電墊110時，即在接合元件200與導電墊110進行對接時，可同時對結構進行加熱與施加壓力，使得接合部210的焊料在製程溫度(例如200-400°C)下由固態熔化為液態，且導電墊110在製程壓力(例如1-100MPa)下產生形變而接觸或箝制住導電柱220。由於在施壓時接合部210呈液態，可提供緩衝的功能以減輕應力。在另一些實施例的電子裝置ED的製程中，在接合元件200與導電墊110進行對接時，可先只對結構施加壓力而不加熱，由於此時接合元件200整體為固態，可對導電墊110施予更大的壓力而使導電墊110產生更大的形變量，在製程管控不傷害結構的情況下，導電墊110可提供更大的箝制力以接觸或箝制住導電柱220。接著，再對結構加熱，使得接合部210的焊料在製程溫度下熔化以填充容置槽120。然而，本揭露實施例的電子裝置ED的製程並不以上述為限。According to the structure of the conductive pad 110 and the structure of the bonding element 200 including the bonding portion 210 and the conductive pillar 220, in the manufacturing process of the electronic device ED in some embodiments, when the electronic unit 300 is electrically connected to the conductive pad 110 through the bonding element 200, that is, when the bonding element 200 and the conductive pad 110 are connected, the structure can be heated and pressure applied at the same time, so that the solder of the bonding portion 210 melts from solid to liquid at the process temperature (e.g., 200-400° C.), and the conductive pad 110 is deformed under the process pressure (e.g., 1-100 MPa) to contact or clamp the conductive pillar 220. Since the bonding portion 210 is in liquid when pressure is applied, it can provide a buffering function to reduce stress. In the manufacturing process of the electronic device ED of other embodiments, when the joint element 200 and the conductive pad 110 are connected, pressure can be applied to the structure without heating. Since the joint element 200 is solid at this time, a greater pressure can be applied to the conductive pad 110 to cause a greater deformation of the conductive pad 110. Under the condition that the process control does not damage the structure, the conductive pad 110 can provide a greater clamping force to contact or clamp the conductive pillar 220. Then, the structure is heated again, so that the solder of the joint part 210 melts at the process temperature to fill the accommodating groove 120. However, the manufacturing process of the electronic device ED of the disclosed embodiment is not limited to the above.

請參考圖4。圖4為本揭露導電墊與接合元件的變化實施例的局部剖面示意圖。如圖4所示，在一些實施例中，電子裝置ED還可包括中介層130，其中至少部分的中介層130設置在導電墊110的容置槽120中且與接合元件200相接，例如中介層130可覆蓋容置槽120的底面122及/或側壁126，或者中介層130還可覆蓋導電墊110的部分上表面110a。中介層130可例如為焊料或導電膠，焊料例如包括錫、鎵、銀、在接合元件200進行對接時的溫度下可熔化的其他材料或上述材料的組合，導電膠例如包括異方性導電膜(anisotropic conductive film，ACF)，但不以此為限。因此，導電墊110可透過中介層130與接合元件200相接，以進一步提升導電墊110與接合元件200之間的接合強度。Please refer to FIG4. FIG4 is a partial cross-sectional schematic diagram of a modified embodiment of the conductive pad and the bonding element disclosed in the present invention. As shown in FIG4, in some embodiments, the electronic device ED may further include an interposer 130, wherein at least a portion of the interposer 130 is disposed in the receiving groove 120 of the conductive pad 110 and connected to the bonding element 200, for example, the interposer 130 may cover the bottom surface 122 and/or the side wall 126 of the receiving groove 120, or the interposer 130 may also cover a portion of the upper surface 110a of the conductive pad 110. The interposer 130 may be, for example, solder or conductive glue. The solder may include, for example, tin, gallium, silver, other materials that can melt at the temperature at which the bonding element 200 is connected, or a combination of the above materials. The conductive glue may include, for example, anisotropic conductive film (ACF), but is not limited thereto. Therefore, the conductive pad 110 may be connected to the bonding element 200 through the interposer 130 to further enhance the bonding strength between the conductive pad 110 and the bonding element 200.

本揭露中電子裝置ED的製程可例如為面板級封裝(panel-level package，FOPLP)製程，且可為先重佈線層(RDL-first)或先晶片(chip-first)的製程，但不以此為限。請再參考圖1，圖1所示的電子裝置ED可例如透過先重佈線層的製程所製造，先形成包括重佈線層的電路結構100，接著可例如透過覆晶接合(flip-chip bonding)將電子單元300設置在電路結構100上，但不以此為限。根據圖1所示的實施例，電子裝置ED還可包括保護層400，其中保護層400可圍繞電子單元300及接合元件200，以隔絕水氣、空氣及/或減少電子單元300及接合元件200損傷。本揭露中所指“圍繞”可表示在電子裝置ED的剖視圖中，元件或膜層至少接觸對應的被圍繞元件或膜層的側表面。舉例而言，保護層400可至少接觸電子單元300的側表面及接合元件200的側表面。如圖1所示，保護層400可覆蓋電子單元300的側表面與上表面並覆蓋接觸一部分的電路結構100表面，但不以此為限。在另一些實施例中，電子單元300的上表面沒有被保護層400所覆蓋，例如可透過研磨(grinding)製程使保護層400暴露出電子單元300的上表面。保護層400可例如包括環氧樹脂、陶瓷、環氧樹脂封裝材料(epoxy molding compound，EMC)、其他合適的材料或上述材料的組合，但不以此為限。The process of the electronic device ED in the present disclosure may be, for example, a panel-level package (FOPLP) process, and may be a redistribution layer first (RDL-first) or chip-first process, but is not limited thereto. Referring again to FIG. 1 , the electronic device ED shown in FIG. 1 may be manufactured, for example, by a redistribution layer first process, first forming a circuit structure 100 including a redistribution layer, and then, for example, the electronic unit 300 may be disposed on the circuit structure 100 by flip-chip bonding, but is not limited thereto. According to the embodiment shown in FIG. 1 , the electronic device ED may further include a protective layer 400, wherein the protective layer 400 may surround the electronic unit 300 and the bonding element 200 to isolate moisture, air and/or reduce damage to the electronic unit 300 and the bonding element 200. The term “surrounding” in the present disclosure may mean that in a cross-sectional view of the electronic device ED, an element or a film layer at least contacts the side surface of the corresponding surrounded element or film layer. For example, the protective layer 400 may at least contact the side surface of the electronic unit 300 and the side surface of the bonding element 200. As shown in FIG1 , the protective layer 400 may cover the side surface and the upper surface of the electronic unit 300 and cover the surface of the circuit structure 100 that contacts a portion thereof, but the present invention is not limited thereto. In other embodiments, the upper surface of the electronic unit 300 is not covered by the protective layer 400, and for example, the protective layer 400 may be exposed to the upper surface of the electronic unit 300 through a grinding process. The protective layer 400 may include, for example, epoxy, ceramic, epoxy molding compound (EMC), other suitable materials, or a combination of the above materials, but the present invention is not limited thereto.

在一些實施例中，如圖1所示，電子裝置ED還可包括另一接合元件500，其中接合元件500與接合元件200分別設置在該電路結構100的相對兩側，即接合元件500可設置在電路結構100相對於電子單元300的一側，且接合元件500電性連接電路結構100。接合元件500可例如為凸塊底層金屬、凸塊、焊球或接墊，接合元件500可包括銅、錫、鎳、金、鉛、其他適合的導電材料或上述材料的組合，但不以此為限。在一些實施例中，電子裝置ED還可包括另一電子單元(圖1中未示出)，此另一電子單元與電子單元300分別設置在電路結構100的相對兩側，且此另一電子單元可透過接合元件500電性連接電路結構100，但不以此為限。In some embodiments, as shown in FIG. 1 , the electronic device ED may further include another bonding element 500, wherein the bonding element 500 and the bonding element 200 are respectively disposed on opposite sides of the circuit structure 100, that is, the bonding element 500 may be disposed on a side of the circuit structure 100 opposite to the electronic unit 300, and the bonding element 500 is electrically connected to the circuit structure 100. The bonding element 500 may be, for example, a bump bottom metal, a bump, a solder ball, or a pad, and the bonding element 500 may include copper, tin, nickel, gold, lead, other suitable conductive materials, or a combination of the above materials, but is not limited thereto. In some embodiments, the electronic device ED may further include another electronic unit (not shown in FIG. 1 ), which is disposed on opposite sides of the circuit structure 100 from the electronic unit 300 and which may be electrically connected to the circuit structure 100 via a bonding element 500, but is not limited thereto.

下文將繼續詳述本揭露電子裝置與電子裝置的製程的其他實施例，爲了簡化說明，下文中使用相同標號標注相同元件，以下主要針對不同實施例間的差異詳加敘述，且不再贅述相同的特徵。本揭露的各實施例與實施例可以互相組合與變化。Other embodiments of the electronic device and the process of manufacturing the electronic device disclosed in the present disclosure will be described in detail below. To simplify the description, the same reference numerals are used below to mark the same components. The following mainly describes the differences between different embodiments, and does not repeat the same features. The various embodiments and embodiments disclosed in the present disclosure can be combined and varied with each other.

請參考圖5。圖5為本揭露又一實施例的電子裝置的剖面示意圖，其中圖5所示的電子裝置ED可例如透過先晶片的製程所製造，但不以此為限。根據圖5所示的實施例，接合元件200’的態樣可不同於圖1所示實施例的接合元件200的態樣，且至少部分的接合元件200’可設置在導電墊110的容置槽120中，而電子單元300可透過接合元件200’電性連接導電墊110，從而使電子單元300與電路結構100電性連接。但在其他實施例中，接合元件200’的態樣也可相同於圖1所示實施例的接合元件200的態樣，並不以此為限。在一些實施例中，如圖5所示，電子裝置ED還可包括另一電子單元600，電子單元600與電子單元300分別設置在電路結構100的相對兩側，且電子單元600可電性連接電路結構100。電子單元600可例如為印刷電路板、晶粒、晶片、積體電路、二極體、電容、電阻或其他合適的主動元件或被動元件，但不以此為限。電子單元600還可例如包括接合墊610，且電路結構100中的導電層112可電性連接電子單元600的接合墊610，接合墊610可包括鋁、銅、錫、鎳、金、鉛、其他適合的導電材料或上述材料的組合，但不以此為限。此外，如圖5所示，電子裝置ED還可包括保護層410，保護層410圍繞電子單元600，例如保護層410可覆蓋接觸電子單元600的側表面與下表面並覆蓋接觸一部分的電路結構100表面，但不以此為限。在另一些實施例中，電子單元600的下表面沒有被保護層410所覆蓋，例如可透過研磨製程使保護層410暴露出電子單元600的下表面。保護層410可例如包括環氧樹脂、陶瓷、環氧樹脂封裝材料、其他合適的材料或上述材料的組合，但不以此為限。Please refer to FIG5. FIG5 is a cross-sectional schematic diagram of an electronic device according to another embodiment of the present disclosure, wherein the electronic device ED shown in FIG5 can be manufactured, for example, through a chip-first process, but is not limited thereto. According to the embodiment shown in FIG5, the state of the bonding element 200' may be different from the state of the bonding element 200 of the embodiment shown in FIG1, and at least a portion of the bonding element 200' may be disposed in the receiving groove 120 of the conductive pad 110, and the electronic unit 300 may be electrically connected to the conductive pad 110 through the bonding element 200', thereby electrically connecting the electronic unit 300 to the circuit structure 100. However, in other embodiments, the state of the bonding element 200' may also be the same as the state of the bonding element 200 of the embodiment shown in FIG1, but is not limited thereto. In some embodiments, as shown in FIG. 5 , the electronic device ED may further include another electronic unit 600, the electronic unit 600 and the electronic unit 300 are respectively disposed on opposite sides of the circuit structure 100, and the electronic unit 600 may be electrically connected to the circuit structure 100. The electronic unit 600 may be, for example, a printed circuit board, a die, a chip, an integrated circuit, a diode, a capacitor, a resistor, or other suitable active or passive components, but is not limited thereto. The electronic unit 600 may further include, for example, a bonding pad 610, and the conductive layer 112 in the circuit structure 100 may be electrically connected to the bonding pad 610 of the electronic unit 600, and the bonding pad 610 may include aluminum, copper, tin, nickel, gold, lead, other suitable conductive materials, or a combination of the above materials, but is not limited thereto. In addition, as shown in FIG5 , the electronic device ED may further include a protective layer 410, the protective layer 410 surrounds the electronic unit 600, for example, the protective layer 410 may cover the side surface and the bottom surface of the electronic unit 600 and cover the surface of the circuit structure 100 that contacts a portion, but is not limited thereto. In other embodiments, the bottom surface of the electronic unit 600 is not covered by the protective layer 410, for example, the protective layer 410 may be exposed to the bottom surface of the electronic unit 600 through a grinding process. The protective layer 410 may include, for example, epoxy resin, ceramic, epoxy resin packaging material, other suitable materials, or a combination of the above materials, but is not limited thereto.

請參考圖6至圖8。圖6至圖8為本揭露電子裝置的另一實施例的導電墊的部分製程示意圖。為了簡化說明，在圖6至圖8中省略了電路結構100中的導電層，且將電路結構100中的多層絕緣層的整體以絕緣層114表示，電路結構100中的多層絕緣層114與多層導電層112的配置例如可參考圖1，但不以圖1為限。如圖6至圖8所示，本揭露另一實施例的導電墊140的製程可例如包括以下步驟。首先，如圖6所示，可圖案化最上層的絕緣層114以形成一個或多個凹槽114G，然後在絕緣層114上形成種子層(seed layer)140S，再在種子層140S上形成金屬層140M1。例如但不限於可透過電鍍製程形成金屬層140M1，其中種子層140S可有助於金屬層140M的形成或提升附著力。然後，可在金屬層140M1上形成圖案化的光阻PR，其中圖案化的光阻PR例如形成在不對應凹槽114G所在區域的金屬層140M1上，例如凹槽114G可位於相鄰的光阻圖案之間。Please refer to Figures 6 to 8. Figures 6 to 8 are schematic diagrams of a portion of the manufacturing process of a conductive pad of another embodiment of the electronic device disclosed herein. In order to simplify the description, the conductive layer in the circuit structure 100 is omitted in Figures 6 to 8, and the entire multi-layer insulation layer in the circuit structure 100 is represented by the insulation layer 114. The configuration of the multi-layer insulation layer 114 and the multi-layer conductive layer 112 in the circuit structure 100 can be, for example, referred to Figure 1, but is not limited to Figure 1. As shown in Figures 6 to 8, the manufacturing process of the conductive pad 140 of another embodiment of the present disclosure may, for example, include the following steps. First, as shown in FIG6 , the topmost insulating layer 114 may be patterned to form one or more grooves 114G, and then a seed layer 140S may be formed on the insulating layer 114, and then a metal layer 140M1 may be formed on the seed layer 140S. For example, but not limited to, the metal layer 140M1 may be formed by an electroplating process, wherein the seed layer 140S may help to form the metal layer 140M or enhance adhesion. Then, a patterned photoresist PR may be formed on the metal layer 140M1, wherein the patterned photoresist PR is formed, for example, on the metal layer 140M1 in an area not corresponding to the groove 114G, such as the groove 114G may be located between adjacent photoresist patterns.

接著，可進行電鍍製程以在圖6所示的金屬層140M1繼續生長金屬材料，形成如圖7所示的金屬層140M2。具體而言，可例如透過調控電鍍液中的添加劑(additive agent)，使添加劑更容易吸附在圖6中虛線框所示的端部P且可增加端部P處金屬的生長速率，從而形成如圖7所示的金屬層140M2。然後，如圖8所示，可移除光阻PR，即可得到包括一個或多個導電墊140的電路結構100。根據圖6至圖8所示實施例，種子層140S的材料可例如包括鈦、銅、鉬、鋁、鎳、銀、錫、其他合適的導電材料或上述材料的組合，但不以此為限。金屬層140M1及/或金屬層140M2的材料可例如包括銅、鎳、金、銀、其他合適的導電材料或上述材料的組合，例如為在所形成的導電墊140進行對接時的溫度與壓力(例如200-400°C與1-100MPa)下可產生機械形變的材料，但不以此為限。Next, an electroplating process may be performed to continue growing metal material on the metal layer 140M1 shown in FIG6 to form a metal layer 140M2 as shown in FIG7 . Specifically, the additive in the electroplating solution may be adjusted to make the additive more easily adsorbed on the end P shown in the dotted frame in FIG6 and to increase the growth rate of the metal at the end P, thereby forming the metal layer 140M2 as shown in FIG7 . Then, as shown in FIG8 , the photoresist PR may be removed to obtain a circuit structure 100 including one or more conductive pads 140 . According to the embodiments shown in FIGS. 6 to 8 , the material of the seed layer 140S may include, for example, titanium, copper, molybdenum, aluminum, nickel, silver, tin, other suitable conductive materials, or a combination of the above materials, but is not limited thereto. The material of the metal layer 140M1 and/or the metal layer 140M2 may include, for example, copper, nickel, gold, silver, other suitable conductive materials or a combination of the above materials, such as a material that can produce mechanical deformation under the temperature and pressure (e.g., 200-400°C and 1-100MPa) when the formed conductive pad 140 is docked, but is not limited to this.

請參考圖9，圖9為圖8所示導電墊與接合元件相接的局部剖面示意圖。如圖9所示，導電墊140可具有容置槽141，容置槽141具有底面142以及與底面142相對的開口144，且底面142的寬度W4大於開口144的寬度W5(即W4＞W5)。其中，可在方向X上由容置槽141的底面142的一端量測到另一端以得到寬度W4，且可在方向X上由容置槽141的開口144的一端量測到另一端以得到最小寬度W5。具體而言，導電墊140可包括突起部146，突起部146環繞開口144，其中突起部146之間的最小距離可為開口144的寬度W5。在一些實施例中，導電墊140的突起部146可接觸接合元件200，使得接合元件200可嵌入導電墊140的容置槽141中，即突起部146可與接合元件200相接觸，以固定接合元件200。舉例而言，接合元件200的接合部210可設置在容置槽141中，且突起部146可接觸接合元件200的導電柱220的一部分，但不以此為限，其中接合元件200的接合部210與導電柱220的細部結構及材料可例如參考前述實施例，於此不再贅述。突起部146接觸接合元件200的一側可具有弧形表面146S，其中弧形表面146S是例如透過如圖6與圖7所示的添加劑吸附在端部P並增加端部P處金屬的生長速率所形成，但不以此為限。根據圖9所示的實施例，導電墊140還可包括延伸部148，延伸部148由突起部146向相反於開口144的方向延伸，其中延伸部148的上表面148a與突起部146的上表面146a之間可具有段差S。即在方向Y上，延伸部148的上表面148a與突起部146的上表面146a之間的最短距離為段差S，其中延伸部148的上表面148a可大致上平行於方向X，但不以此為限。Please refer to FIG. 9, which is a partial cross-sectional schematic diagram of the conductive pad and the joint element shown in FIG. 8. As shown in FIG. 9, the conductive pad 140 may have a receiving groove 141, and the receiving groove 141 has a bottom surface 142 and an opening 144 opposite to the bottom surface 142, and the width W4 of the bottom surface 142 is greater than the width W5 of the opening 144 (i.e., W4>W5). The width W4 can be measured from one end of the bottom surface 142 of the receiving groove 141 to the other end in the direction X, and the minimum width W5 can be measured from one end of the opening 144 of the receiving groove 141 to the other end in the direction X. Specifically, the conductive pad 140 may include a protrusion 146, and the protrusion 146 surrounds the opening 144, wherein the minimum distance between the protrusions 146 may be the width W5 of the opening 144. In some embodiments, the protrusion 146 of the conductive pad 140 may contact the joint element 200, so that the joint element 200 may be embedded in the receiving groove 141 of the conductive pad 140, that is, the protrusion 146 may contact the joint element 200 to fix the joint element 200. For example, the joint portion 210 of the joint element 200 may be disposed in the receiving groove 141, and the protrusion 146 may contact a portion of the conductive pillar 220 of the joint element 200, but the present invention is not limited thereto. The detailed structures and materials of the joint portion 210 and the conductive pillar 220 of the joint element 200 may refer to the aforementioned embodiments, and will not be described in detail here. The side of the protrusion 146 contacting the joint element 200 may have an arc surface 146S, wherein the arc surface 146S is formed, for example, by adsorbing an additive on the end P as shown in FIG. 6 and FIG. 7 and increasing the growth rate of the metal at the end P, but the present invention is not limited thereto. According to the embodiment shown in FIG. 9 , the conductive pad 140 may further include an extension portion 148, the extension portion 148 extends from the protrusion portion 146 in a direction opposite to the opening 144, wherein an upper surface 148a of the extension portion 148 and an upper surface 146a of the protrusion portion 146 may have a step S. That is, in the direction Y, the shortest distance between the upper surface 148a of the extension portion 148 and the upper surface 146a of the protrusion portion 146 is the step S, wherein the upper surface 148a of the extension portion 148 may be substantially parallel to the direction X, but is not limited thereto.

綜上所述，根據本揭露實施例的電子裝置，透過設置具有下部寬度大於上部寬度的容置槽的導電墊，並使至少部分的接合元件設置在容置槽中，可提升接合元件與導電墊之間的對位精準度，進而提升電子裝置的可靠度。此外，透過導電墊接觸接合元件，可使導電墊有效地電連接接合元件，因此相較於習知技術，本揭露電子裝置中的接合元件與導電墊可以具有較小的尺寸，從而可使扇出線路的設計具有更多彈性及/或能夠節省成本。In summary, according to the electronic device of the embodiment of the present disclosure, by providing a conductive pad having a receiving groove whose lower width is greater than the upper width, and by disposing at least a portion of the bonding element in the receiving groove, the alignment accuracy between the bonding element and the conductive pad can be improved, thereby improving the reliability of the electronic device. In addition, by contacting the bonding element with the conductive pad, the conductive pad can be effectively electrically connected to the bonding element, so that compared with the prior art, the bonding element and the conductive pad in the electronic device disclosed in the present disclosure can have a smaller size, thereby making the design of the fan-out circuit more flexible and/or saving costs.

以上所述僅為本揭露的實施例而已，並不用於限制本揭露，對於本領域的技術人員來說，本揭露可以有各種更改和變化。凡在本揭露的精神和原則之內，所作的任何修改、等同替換、改進等，均應包含在本揭露的保護範圍之內。The above is only an embodiment of the present disclosure and is not intended to limit the present disclosure. For those skilled in the art, the present disclosure may be modified and varied in various ways. Any modification, equivalent substitution, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

100:電路結構 110,140:導電墊 110a,146a,148a:上表面 110b:下表面 110e:邊緣 112,112a,112b:導電層 114,114a,114b:絕緣層 114G:凹槽 120,141:容置槽 122,142:底面 124,144:開口 126:側壁 130:中介層 140M1,140M2:金屬層 140S:種子層 146:突起部 146S:弧形表面 148:延伸部 200,200’,500:接合元件 210:接合部 220:導電柱 300,600:電子單元 400,410:保護層 610:接合墊 ED:電子裝置 H1:第一距離 H2:第二距離 I,I1:界面 P:端部 PR:光阻 S:段差 T1:深度 T2,T3:厚度 W1,W2,W3,W4,W5:寬度 X,Y:方向 θ:夾角 100: Circuit structure 110,140: Conductive pad 110a,146a,148a: Upper surface 110b: Lower surface 110e: Edge 112,112a,112b: Conductive layer 114,114a,114b: Insulating layer 114G: Groove 120,141: Accommodating groove 122,142: Bottom surface 124,144: Opening 126: Side wall 130: Intermediate layer 140M1,140M2: Metal layer 140S: Seed layer 146: Protrusion 146S: Arc surface 148: Extension part 200,200’,500: junction element 210: junction part 220: conductive column 300,600: electronic unit 400,410: protective layer 610: junction pad ED: electronic device H1: first distance H2: second distance I,I1: interface P: end PR: photoresist S: step T1: depth T2,T3: thickness W1,W2,W3,W4,W5: width X,Y: direction θ: angle

圖1為本揭露一實施例的電子裝置的剖面示意圖。圖2為圖1所示導電墊與接合元件的局部放大示意圖。圖3為本揭露另一實施例的電子裝置的剖面示意圖。圖4為本揭露導電墊與接合元件的變化實施例的局部剖面示意圖。圖5為本揭露又一實施例的電子裝置的剖面示意圖。圖6至圖8為本揭露電子裝置的另一實施例的導電墊的部分製程示意圖。圖9為圖8所示導電墊與接合元件相接的局部剖面示意圖。 FIG. 1 is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure. FIG. 2 is a partially enlarged schematic view of the conductive pad and the bonding element shown in FIG. 1. FIG. 3 is a schematic cross-sectional view of an electronic device according to another embodiment of the present disclosure. FIG. 4 is a schematic cross-sectional view of a modified embodiment of the conductive pad and the bonding element of the present disclosure. FIG. 5 is a schematic cross-sectional view of an electronic device according to another embodiment of the present disclosure. FIG. 6 to FIG. 8 are schematic views of a portion of the manufacturing process of the conductive pad of another embodiment of the electronic device of the present disclosure. FIG. 9 is a schematic cross-sectional view of a portion of the conductive pad and the bonding element shown in FIG. 8 connected to each other.

100:電路結構 100: Circuit structure

110:導電墊 110: Conductive pad

112,112a,112b:導電層 112,112a,112b: Conductive layer

114,114a,114b:絕緣層 114,114a,114b: Insulating layer

114G:凹槽 114G: Groove

120:容置槽 120: Storage tank

200,500:接合元件 200,500:Jointing elements

210:接合部 210: Joint

220:導電柱 220: Conductive column

300:電子單元 300: Electronic unit

400:保護層 400: Protective layer

ED:電子裝置 ED: Electronic devices

X,Y:方向 X,Y: direction

Claims

一種電子裝置，包括：一電路結構，包括一導電墊，其中該導電墊具有一容置槽；一接合元件，至少部分的該接合元件設置在該容置槽中；以及一電子單元，該電子單元透過該接合元件電性連接該導電墊；其中，該容置槽具有一底面以及與該底面相對的一開口，且該底面的寬度大於該開口的寬度。 An electronic device includes: a circuit structure including a conductive pad, wherein the conductive pad has a receiving groove; a bonding element, at least part of which is disposed in the receiving groove; and an electronic unit, which is electrically connected to the conductive pad through the bonding element; wherein the receiving groove has a bottom surface and an opening opposite to the bottom surface, and the width of the bottom surface is greater than the width of the opening.

如請求項1所述的電子裝置，其中該容置槽的深度小於該導電墊的厚度。An electronic device as described in claim 1, wherein the depth of the receiving groove is less than the thickness of the conductive pad.

如請求項1所述的電子裝置，其中在該電子裝置的剖視圖中，該導電墊的一邊緣與該底面之間的最短距離為一第一距離，該導電墊的該邊緣與該開口之間的最短距離為一第二距離，且該第一距離小於該第二距離。An electronic device as described in claim 1, wherein in a cross-sectional view of the electronic device, the shortest distance between an edge of the conductive pad and the bottom surface is a first distance, the shortest distance between the edge of the conductive pad and the opening is a second distance, and the first distance is smaller than the second distance.

如請求項1所述的電子裝置，其中該容置槽具有一側壁，該側壁與該底面相接，其中該側壁與該底面之間的夾角小於90度。An electronic device as described in claim 1, wherein the receiving groove has a side wall connected to the bottom surface, wherein the angle between the side wall and the bottom surface is less than 90 degrees.

如請求項1所述的電子裝置，其中該接合元件包括一接合部及一導電柱，該導電柱位在該電子單元與該接合部之間，其中該容置槽的深度大於或等於該接合部的厚度。An electronic device as described in claim 1, wherein the joining element includes a joining portion and a conductive post, the conductive post is located between the electronic unit and the joining portion, and the depth of the accommodating groove is greater than or equal to the thickness of the joining portion.

如請求項5所述的電子裝置，其中該接合部設置在該容置槽中，且該導電墊接觸部分的該導電柱。An electronic device as described in claim 5, wherein the joint portion is disposed in the receiving groove, and the conductive pad contacts the conductive column of the portion.

如請求項5所述的電子裝置，其中該接合部包括焊料，且該接合部填充該容置槽的至少一部分。An electronic device as described in claim 5, wherein the joint includes solder and fills at least a portion of the receiving groove.

如請求項1所述的電子裝置，其中該導電墊接觸該接合元件。An electronic device as described in claim 1, wherein the conductive pad contacts the bonding element.

如請求項1所述的電子裝置，還包括一中介層，至少部分的該中介層設置在該容置槽中且與該接合元件相連接。The electronic device as described in claim 1 further includes an intermediate layer, at least a portion of which is disposed in the receiving groove and connected to the bonding element.

如請求項1所述的電子裝置，其中該容置槽的寬度由該底面往該開口漸減。An electronic device as described in claim 1, wherein the width of the receiving groove gradually decreases from the bottom surface toward the opening.