TW202410446A - Multi-color led pixel unit and micro-led display panel - Google Patents
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Abstract
Description
相關申請的交叉引用Cross-references to related applications
本申請是2022年6月14日提交的申請號17/840,516的部分繼續申請，所述申請是2019年9月11日提交的申請號16/567,123 (現在授予為專利號11,362,133)的部分繼續申請，所有所述申請的全部內容通過引用併入本文。This application is a continuation-in-part of application No. 17/840,516 filed on June 14, 2022, which is a continuation-in-part of application No. 16/567,123 filed on September 11, 2019 (now issued as patent No. 11,362,133), the entire contents of all of which are incorporated herein by reference.
本公開文本總體上涉及微型發光二極體技術領域，並且更具體地涉及多色LED像素單元和微型LED顯示面板。The present disclosure relates generally to the field of micro light emitting diode technology, and more specifically to multi-color LED pixel units and micro LED display panels.
發光二極體(LED)是一種半導體二極體，可以將電能轉換成光能。常規的發光二極體包括具有單向傳導的P-N接面。在正偏壓下，電洞從P區流入N區，並且電子從N區流入P區，並且N區中的電子與P區中的電洞的結合產生激發光的自發輻射。電子和電洞在不同的半導體材料中具有不同的能態，因此由電子與電洞之間的結合所產生的能量是不同的。能量越高，激發光的波長就越短。因此，LED可以發射從紫外光到紅外光的不同波長的不同光，從而產生多色LED。A light emitting diode (LED) is a semiconductor diode that can convert electrical energy into light energy. A conventional light emitting diode includes a P-N junction with unidirectional conduction. Under forward bias, holes flow from the P region into the N region, and electrons flow from the N region into the P region, and the combination of electrons in the N region and holes in the P region produces spontaneous radiation of excited light. Electrons and holes have different energy states in different semiconductor materials, so the energy generated by the combination between electrons and holes is different. The higher the energy, the shorter the wavelength of the excited light. Therefore, LEDs can emit different lights of different wavelengths from ultraviolet light to infrared light, thereby producing multi-color LEDs.
發射白光或其他顏色的光的多色LED具有廣泛的應用，其中大部分應用於顯示領域。常規的LED顯示面板是通過將單色LED逐一組裝在基板上而形成的。用於組裝單色LED的方法包括：利用金屬接合過程或其他過程通過LED的金屬線或連接電極將LED與互連層接合。直到完成組裝單色LED的過程為止才執行組裝其他顏色的LED的過程，導致過程複雜，增加了處理難度，並且增加了生產成本。此外，通過逐一組裝或形成單個LED而製造的多色顯示面板具有較高的功耗以及降低的亮度和顏色。Multicolor LEDs that emit white light or other colors of light have a wide range of applications, most of which are used in the display field. Conventional LED display panels are formed by assembling single-color LEDs one by one on a substrate. Methods used to assemble single-color LEDs include bonding the LEDs to interconnect layers through the LED's metal wires or connecting electrodes using a metal bonding process or other processes. The process of assembling LEDs of other colors is not performed until the process of assembling single-color LEDs is completed, resulting in a complicated process, increasing processing difficulty, and increasing production costs. In addition, multi-color display panels manufactured by assembling or forming individual LEDs one by one have higher power consumption and reduced brightness and color.
根據本公開文本的一個方面，一種用於製造微型發光二極體(LED)顯示面板的方法包括：在晶圓基板上形成堆疊結構，所述堆疊結構按從底至頂的順序包括第一金屬層、第一類型的發光層、第二金屬層和第二類型的發光層；在所述堆疊結構中形成多個溝槽，所述多個溝槽限定多個微型LED顯示面板區域；對所述第二類型的發光層和所述第二金屬層進行圖案化，直到暴露所述第一類型的發光層的頂表面的部分為止；在圖案化所述第二類型的發光層和所述第二金屬層之後，選擇性地蝕刻所述堆疊結構以暴露所述第一金屬層的側表面，從而在每個微型LED顯示面板區域中形成多個第一LED和多個第二LED，每個第一LED包括所述第一金屬層和所述第一類型的發光層，並且每個第二LED包括所述第一金屬層、所述第一類型的發光層、所述第二金屬層、和所述第二類型的發光層；以及切割所述晶圓基板以形成多個微型LED顯示面板。According to one aspect of the present disclosure, a method for manufacturing a micro light-emitting diode (LED) display panel includes forming a stacked structure on a wafer substrate, the stacked structure including a first metal in order from bottom to top layer, a first type of luminescent layer, a second metal layer and a second type of luminescent layer; forming a plurality of trenches in the stacked structure, the plurality of trenches defining a plurality of micro LED display panel areas; The second type of light emitting layer and the second metal layer are patterned until a portion of the top surface of the first type of light emitting layer is exposed; while patterning the second type of light emitting layer and the second metal layer After the two metal layers are formed, the stacked structure is selectively etched to expose side surfaces of the first metal layer, thereby forming a plurality of first LEDs and a plurality of second LEDs in each micro LED display panel area, each The first LED includes the first metal layer and the first type of light-emitting layer, and each second LED includes the first metal layer, the first type of light-emitting layer, the second metal layer, and the second type of light emitting layer; and cutting the wafer substrate to form a plurality of micro LED display panels.
現在將詳細參考所提出的優選實施方案以提供對本發明的進一步理解。所討論的具體實施方案和附圖僅說明進行和使用本發明的具體方式，而不限制本發明或所附請求項的範圍。Reference will now be made in detail to the presented preferred embodiments to provide a further understanding of the invention. The specific embodiments discussed and the drawings illustrate only specific ways of making and using the invention and do not limit the scope of the invention or the appended claims.
在下文中，結合圖1至圖44，通過本公開文本的實施方案來進一步描述本公開文本。應當指出的是，所有附圖都採用了非常簡化的形式，並且不精確的比例僅用於幫助方便且清楚地解釋本公開文本的實施方案。Hereinafter, the present disclosure is further described through embodiments of the present disclosure with reference to FIGS. 1 to 44 . It should be noted that all drawings are in very simplified form and are not to precise proportions solely to aid in the convenience and clarity of explanation of embodiments of the present disclosure.
本文公開的多色發光像素單元至少包括一種類型的發光電晶體，或若干種類型的發光電晶體。各種類型的發光電晶體包括上部導電層、底部導電層以及在上部導電層與底部導電層之間的發光層。所有的發光電晶體共享相同的上部導電層和相同的底部導電層。應當注意的是，發光層可以是單層或多層。中間層可以布置在同一發光二極體中的多個發光層中的兩個發光層之間。假設多色發光像素單元包括第一至第M類型的發光電晶體，其中M是整數並且不小於二。第一至第M類型的發光電晶體中的每一個至少包括相同類型的發光層。例如，第一至第M類型的發光電晶體中的每一個均包括第一類型的發光層。第二類型至第M類型的發光層中的任一個與第一類型的發光層不同。本公開文本還提供了一種包括呈矩陣布置的多個上述像素單元的微型顯示面板。The multicolor light-emitting pixel unit disclosed in this article includes at least one type of light-emitting transistor, or several types of light-emitting transistors. Various types of light-emitting transistors include an upper conductive layer, a bottom conductive layer, and a light-emitting layer between the upper conductive layer and the bottom conductive layer. All light-emitting transistors share the same upper conductive layer and the same bottom conductive layer. It should be noted that the light-emitting layer can be a single layer or multiple layers. The intermediate layer can be arranged between two light-emitting layers of multiple light-emitting layers in the same light-emitting diode. Assume that the multicolor light-emitting pixel unit includes first to M-th types of light-emitting transistors, where M is an integer and is not less than two. Each of the first to M-th types of light-emitting transistors includes at least the same type of light-emitting layer. For example, each of the first to M-th types of light-emitting transistors includes a first type of light-emitting layer. Any of the second to M-th types of light-emitting layers is different from the first type of light-emitting layer. The present disclosure also provides a micro display panel including a plurality of the above-mentioned pixel units arranged in a matrix.
在一些實施方案中，發光電晶體可以是發光二極體(LED)、肖特基發光電晶體等中的至少一種。發光電晶體的頂部導電層是但不限於透明導電層，並且發光電晶體的底部導電層是但不限於金屬層。在下文中，LED用作發光電晶體的例子，但是這並不限制本公開文本的範圍。本領域技術人員可以根據常規技術手段將LED改變成另一種發光電晶體。In some embodiments, the light-emitting transistor may be at least one of a light-emitting diode (LED), a Schottky light-emitting transistor, and the like. The top conductive layer of the light-emitting transistor is, but is not limited to, a transparent conductive layer, and the bottom conductive layer of the light-emitting transistor is, but is not limited to, a metal layer. In the following, LED is used as an example of a light-emitting transistor, but this does not limit the scope of this disclosure. Those skilled in the art can change the LED into another light-emitting transistor according to conventional technical means.
圖1是展示根據本公開文本的實施方案的多色發光像素單元1000的截面視圖。參考圖1，多色發光像素單元1000至少包括並排布置在基板100上的第一類型的LED 01和第二類型的LED 02。第一類型的LED 01的頂部與第二類型的LED 02的頂部不在同一水平面。第一類型的LED 01的類型與第二類型的LED 02的類型不同。在此，如圖1所示，第一類型的LED 01的頂部低於第二類型的LED 02的頂部。根據實施方案，第一類型的LED 01選自紅色LED、綠色LED、藍色LED、黃色LED、橙色LED或青色LED中的一種，並且第二類型的LED 02選自綠色LED、藍色LED、紅色LED、黃色LED、橙色LED或青色LED中的一種。此外，第一類型的LED 01的發光面積的大小不同於第二類型的LED 02的發光面積的大小。例如，第一類型的LED 01為紅色LED，第二類型的LED 02為綠色LED，並且紅色LED的發光面積的大小與綠色LED的發光面積的大小不同。此外，根據可能需要的不同顏色，綠色LED的發光面積可以小於紅色LED的發光面積。FIG. 1 is a cross-sectional view showing a multicolor light-emitting pixel unit 1000 according to an embodiment of the present disclosure. Referring to FIG. 1 , the multicolor light-emitting pixel unit 1000 includes at least a first type of LED 01 and a second type of LED 02 arranged side by side on a substrate 100. The top of the first type of LED 01 is not in the same horizontal plane as the top of the second type of LED 02. The type of the first type of LED 01 is different from the type of the second type of LED 02. Here, as shown in FIG. 1 , the top of the first type of LED 01 is lower than the top of the second type of LED 02. According to an embodiment, the first type of LED 01 is selected from one of a red LED, a green LED, a blue LED, a yellow LED, an orange LED or a cyan LED, and the second type of LED 02 is selected from one of a green LED, a blue LED, a red LED, a yellow LED, an orange LED or a cyan LED. In addition, the size of the light emitting area of the first type of LED 01 is different from the size of the light emitting area of the second type of LED 02. For example, the first type of LED 01 is a red LED, the second type of LED 02 is a green LED, and the size of the light emitting area of the red LED is different from the size of the light emitting area of the green LED. In addition, according to different colors that may be required, the light emitting area of the green LED may be smaller than the light emitting area of the red LED.
此外，隔離結構07被布置在第一類型的LED與第二類型的LED之間。在圖1中所展示的實施方案中，在第一類型的LED 01與第二類型的LED 02之間的隔離結構07是隔離溝槽。多色發光像素單元1000包括第一金屬層、第一類型的發光層、第二金屬層以及第二類型的發光層。如圖1中所展示的，第一類型的LED 01按從底至頂的順序至少包括第一金屬層的第一區段101-1和第一類型的發光層的第一區段102-1。第一金屬層的第一區段101-1構成第一類型的LED 01的底部導電層。第二類型的LED 02按從底至頂的順序至少包括第一金屬層的第二區段101-2、第一類型的發光層的第二區段102-2、第二金屬層的第一區段201-1和第二類型的發光層的第一區段202-2，以及第一電連接器203。第一金屬層的第一區段101-1和第一金屬層的第二區段101-2與基板100電連接。隔離結構07將第一類型的LED 01中的第一金屬層的第一區段101‑1與第二類型的LED 02中的第一金屬層的第二區段101-2隔離。隔離結構07還將第一類型的LED 01中的第一類型的發光層的第一區段102-1與第二類型的LED 02中的第一類型的發光層的第二區段102-2隔離。此外，為了簡化製造過程，第二類型的LED 02中的第二金屬層的第一區段201-1、第一類型的發光層的第二區段102-2和第一金屬層的第二區段101-2通過第一電連接器203來與彼此電連接。根據一個實施方案，第一電連接器203可以附接到並接觸第二類型的LED 02的側壁表面的一部分或全部。替代性地，第一電連接器203可以僅附接到並接觸第二類型的LED 02中的第二金屬層的第一區段201-1和第一金屬層的第二區段101-2的表面。或替代性地，第一電連接器203可以形成為導電側臂，所述導電側臂附接到並接觸第二金屬層的第一區段201-1、第一類型的發光層的第二區段102-2和第一金屬層的第二區段101-2的側壁。在第二類型的LED 02中的第一金屬層的第二區段101-2與第二金屬層的第一區段201-1之間的電連接器203可以具有其他形狀，諸如曲線。在圖1中所展示的實施方案中，第一電連接器203附接到第二類型的LED 02的側壁，使得第一電連接器203遵循第二類型的LED 02的側壁的表面形貌。In addition, an isolation structure 07 is arranged between the first type of LED and the second type of LED. In the embodiment shown in FIG1 , the isolation structure 07 between the first type of LED 01 and the second type of LED 02 is an isolation trench. The multi-color light-emitting pixel unit 1000 includes a first metal layer, a first type of light-emitting layer, a second metal layer, and a second type of light-emitting layer. As shown in FIG1 , the first type of LED 01 includes at least a first segment 101-1 of the first metal layer and a first segment 102-1 of the first type of light-emitting layer in order from bottom to top. The first segment 101-1 of the first metal layer constitutes the bottom conductive layer of the first type of LED 01. The second type of LED 02 includes at least, in order from bottom to top, a second segment 101-2 of the first metal layer, a second segment 102-2 of the first type of light-emitting layer, a first segment 201-1 of the second metal layer, and a first segment 202-2 of the second type of light-emitting layer, and a first electrical connector 203. The first segment 101-1 of the first metal layer and the second segment 101-2 of the first metal layer are electrically connected to the substrate 100. The isolation structure 07 isolates the first segment 101-1 of the first metal layer in the first type of LED 01 from the second segment 101-2 of the first metal layer in the second type of LED 02. The isolation structure 07 also isolates the first segment 102-1 of the first type of light-emitting layer in the first type of LED 01 from the second segment 102-2 of the first type of light-emitting layer in the second type of LED 02. In addition, in order to simplify the manufacturing process, the first segment 201-1 of the second metal layer in the second type of LED 02, the second segment 102-2 of the first type of light-emitting layer, and the second segment 101-2 of the first metal layer are electrically connected to each other through the first electrical connector 203. According to one embodiment, the first electrical connector 203 can be attached to and contact a part or all of the side wall surface of the second type of LED 02. Alternatively, the first electrical connector 203 may be attached to and contact only the surface of the first segment 201-1 of the second metal layer and the second segment 101-2 of the first metal layer in the second type of LED 02. Or alternatively, the first electrical connector 203 may be formed as a conductive side arm that is attached to and contacts the sidewall of the first segment 201-1 of the second metal layer, the second segment 102-2 of the first type of light-emitting layer, and the second segment 101-2 of the first metal layer. The electrical connector 203 between the second segment 101-2 of the first metal layer and the first segment 201-1 of the second metal layer in the second type of LED 02 may have other shapes, such as a curve. In the embodiment shown in FIG. 1 , the first electrical connector 203 is attached to the side wall of the second type of LED 02 such that the first electrical connector 203 follows the surface topography of the side wall of the second type of LED 02.
參考圖1，頂部隔離層04和頂部透明導電層05被布置在第一類型的LED 01中的第一類型的發光層的第一區段102-1和第二類型的LED 02中的第二類型的發光層的第一區段202-1上。頂部隔離層04覆蓋第一類型的發光層的第一區段102-1、第二類型的發光層的第一區段202-1和暴露的基板100。頂部隔離層04具有開口，所述開口暴露第一類型的發光層的第一區段102-1和第二類型的發光層的第一區段202-1的頂表面的部分。頂部透明導電層05覆蓋頂部隔離層04並且形成在頂部隔離層04的開口中，並且從而經由開口與第一類型的發光層的第一區段102-1和第二類型的發光層的第一區段202-1的暴露的頂表面接觸。Referring to FIG. 1 , a top isolation layer 04 and a top transparent conductive layer 05 are arranged in a first section 102 - 1 of a first type of light emitting layer in a first type LED 01 and a second section 102 - 1 in a second type LED 02 type of luminescent layer on the first section 202-1. The top isolation layer 04 covers the first section 102 - 1 of the first type of luminescent layer, the first section 202 - 1 of the second type of luminescent layer and the exposed substrate 100 . The top isolation layer 04 has openings that expose portions of the top surfaces of the first section 102 - 1 of the first type of luminescent layer and the first section 202 - 1 of the second type of luminescent layer. The top transparent conductive layer 05 covers the top isolation layer 04 and is formed in the opening of the top isolation layer 04 and thereby communicates with the first section 102 - 1 of the first type of light emitting layer and the first section of the second type of light emitting layer via the opening. The exposed top surface of section 202-1 contacts.
基板100是積體電路(IC)基板。IC基板包括互連層，所述互連層與第一類型的LED 01中的第一金屬層的第一區段101-1和第二類型的LED 02中的第一金屬層的第二區段101-2電連接。由於第一電連接器203與第二類型的LED 02中的第一金屬層的第二區段101-2連接，因此第一電連接器203與基板100中的互連層連接。此外，參考圖1，第一電連接器203的底部延伸至基板100以與互連層連接。在此，IC基板至少包括驅動電路。驅動電路分別控制每個LED。The substrate 100 is an integrated circuit (IC) substrate. The IC substrate includes an interconnect layer with a first section 101 - 1 of the first metal layer in the LED 01 of the first type and a second section 101 - 1 of the first metal layer in the LED 02 of the second type. Section 101-2 is electrically connected. Since the first electrical connector 203 is connected to the second section 101 - 2 of the first metal layer in the second type LED 02 , the first electrical connector 203 is connected to the interconnection layer in the substrate 100 . Furthermore, referring to FIG. 1 , the bottom of the first electrical connector 203 extends to the substrate 100 to connect with the interconnection layer. Here, the IC substrate includes at least a driver circuit. The driver circuit controls each LED individually.
圖2是展示根據本公開文本的實施方案的多色發光像素單元2000的截面視圖。參考圖2，多色發光像素單元2000至少包括布置在同一基板100上的第一類型的LED 01、第二類型的LED 02和第三類型的LED 03。第三類型的LED 03與第一類型的LED 01和第二類型的LED 02不同。在此，第一類型的LED 01選自紅色LED、綠色LED、藍色LED、黃色LED、橙色LED或青色LED中的一種；第二類型的LED 02選自綠色LED、藍色LED、紅色LED、黃色LED、橙色LED或青色LED中的一種；並且第三類型的LED 03選自藍色LED、紅色LED、綠色LED、黃色LED、橙色LED或青色LED中的一種。例如，紅色LED被選為第一類型的LED 01，綠色LED被選為第二類型的LED 02，並且藍色LED被選為第三類型的LED 03。參考圖2，第三類型的LED 03的高度與第一類型的LED 01的高度不同。此外，第一類型的LED 01的高度與第二類型的LED 02的高度不同，而第二類型的LED 02的高度與第三類型的LED 03的高度相同。在其他實施方案中，第三類型的LED 03的高度、第一類型的LED 01的高度和第二類型的LED 02的高度可以彼此不同，如圖3所示。Fig. 2 is a cross-sectional view showing a multicolor light-emitting pixel unit 2000 according to an embodiment of the present disclosure. Referring to Fig. 2, the multicolor light-emitting pixel unit 2000 includes at least a first type of LED 01, a second type of LED 02, and a third type of LED 03 arranged on the same substrate 100. The third type of LED 03 is different from the first type of LED 01 and the second type of LED 02. Here, the first type of LED 01 is selected from one of a red LED, a green LED, a blue LED, a yellow LED, an orange LED, or a cyan LED; the second type of LED 02 is selected from one of a green LED, a blue LED, a red LED, a yellow LED, an orange LED, or a cyan LED; and the third type of LED 03 is selected from one of a blue LED, a red LED, a green LED, a yellow LED, an orange LED, or a cyan LED. For example, a red LED is selected as the first type of LED 01, a green LED is selected as the second type of LED 02, and a blue LED is selected as the third type of LED 03. Referring to FIG2 , the height of the third type of LED 03 is different from the height of the first type of LED 01. In addition, the height of the first type of LED 01 is different from the height of the second type of LED 02, while the height of the second type of LED 02 is the same as the height of the third type of LED 03. In other embodiments, the height of the third type of LED 03, the height of the first type of LED 01, and the height of the second type of LED 02 may be different from each other, as shown in FIG3 .
在多色發光像素單元2000中，第一類型的LED 01和第二類型的LED 02的結構與多色發光像素單元2000中的第一類型的LED 01和第二類型的LED 02的結構相同，因此不再重複其詳細描述。多色發光像素單元2000中的第三類型的LED 03按從底至頂的順序至少包括第一金屬層的第三區段101-3、第一類型的發光層的第三區段102-3、第三金屬層的第一區段301-1和第三類型的發光層的第一區段302-1，以及連接第一金屬層的第三區段101-3和第三金屬層的第一區段301-1的第二電連接器303。多色發光像素單元2000還包括頂部隔離層04，所述頂部隔離層覆蓋第一類型的LED 01、第二類型的LED 02和第三類型的LED 03並且具有開口，所述開口暴露第一類型的LED 01中的第一類型的發光層102-1的第一區段的一部分、第二類型的發光層的第一區段202-1的一部分以及第三類型的發光層的第一區段302-1的一部分。頂部電極層05被形成在頂部隔離層04的頂部上，並且經由頂部隔離層04的開口與第一類型的發光層的第一區段102-1、第二類型的發光層的第一區段202-1以及第三類型的發光層的第一區段302-1接觸。In the multi-color light-emitting pixel unit 2000, the structures of the first type LED 01 and the second type LED 02 are the same as the structures of the first type LED 01 and the second type LED 02 in the multi-color light-emitting pixel unit 2000, Therefore its detailed description will not be repeated. The third type of LED 03 in the multi-color light-emitting pixel unit 2000 includes at least a third section 101-3 of the first metal layer and a third section 102-3 of the first type of light-emitting layer in order from bottom to top. , the first section 301-1 of the third metal layer and the first section 302-1 of the third type of light-emitting layer, and the third section 101-3 connecting the first metal layer and the third metal layer. A second electrical connector 303 of section 301-1. The multi-color light-emitting pixel unit 2000 further includes a top isolation layer 04 covering the first type LED 01, the second type LED 02 and the third type LED 03 and having an opening exposing the first type A part of the first section of the first type of luminescent layer 102-1, a part of the first section of the second type of luminescent layer 202-1 and a first section of the third type of luminescent layer in the LED 01 Part of 302-1. The top electrode layer 05 is formed on top of the top isolation layer 04 and communicates with the first section 102 - 1 of the first type of light emitting layer, the first section of the second type of light emitting layer via the opening of the top isolation layer 04 202-1 and the first section 302-1 of the third type of luminescent layer.
圖3是展示根據本公開文本的實施方案的多色發光像素單元3000的截面視圖。參考圖3，在多色發光像素單元3000中，第三類型的LED 03的頂部高於第二類型的LED 02的頂部，同時第一類型的LED的高度與第二類型的LED 03的高度不同。3 is a cross-sectional view showing a multi-color light-emitting pixel unit 3000 according to an embodiment of the present disclosure. Referring to Figure 3, in the multi-color light emitting pixel unit 3000, the top of the third type LED 03 is higher than the top of the second type LED 02, while the height of the first type LED is different from the height of the second type LED 03. .
圖4是根據本公開文本的實施方案的多色發光像素單元4000的俯視圖。多色發光像素單元4000可以是圖2中所展示的多色發光像素單元2000或圖3中所展示的多色發光像素單元3000。圖4展示了三種類型的LED 01、02和03在像素單元中的布置，但是本公開文本還包括其他布置，諸如矩陣。在此，第三類型的LED 03的發光面積的大小與第一類型的LED 01的發光面積的大小不同，並且與第二類型的LED 02的發光面積的大小不同。例如，第一類型的LED 01為紅色LED，第二類型的LED 02為綠色LED，並且第三類型的LED 03為藍色LED。第一類型的LED 01、第二類型的LED 02、第三類型的LED 03中的每一個的發光面積的大小可以根據多色發光像素單元4000所需要發射的光的顏色來確定。當需要白光時，紅色LED的發光面積的大小大於綠色LED的發光面積的大小，並且藍色LED的發光面積的大小大於綠色LED的發光面積的大小。如圖4所示，紅色LED與藍色LED之間的空間大於藍色LED與綠色LED之間的空間；紅色LED與綠色LED之間的空間大於藍色LED與綠色LED之間的空間，從而實現更好的發光效果。4 is a top view of a multi-color emitting pixel unit 4000 according to an embodiment of the present disclosure. The multi-color light-emitting pixel unit 4000 may be the multi-color light-emitting pixel unit 2000 shown in FIG. 2 or the multi-color light-emitting pixel unit 3000 shown in FIG. 3 . Figure 4 shows an arrangement of three types of LEDs 01, 02 and 03 in a pixel unit, but this disclosure also includes other arrangements, such as matrices. Here, the size of the light-emitting area of the third type LED 03 is different from the size of the light-emitting area of the first type LED 01 and different from the size of the light-emitting area of the second type LED 02 . For example, the first type of LED 01 is a red LED, the second type of LED 02 is a green LED, and the third type of LED 03 is a blue LED. The size of the light-emitting area of each of the first type LED 01, the second type LED 02, and the third type LED 03 can be determined according to the color of light that the multi-color light-emitting pixel unit 4000 needs to emit. When white light is required, the size of the light-emitting area of the red LED is greater than that of the green LED, and the size of the light-emitting area of the blue LED is greater than the size of the green LED. As shown in Figure 4, the space between red LED and blue LED is larger than the space between blue LED and green LED; the space between red LED and green LED is larger than the space between blue LED and green LED, so Achieve better luminous effect.
返回參考圖3，隔離結構07被布置在第一類型的LED 01、第二類型的LED 02和第三類型的LED 03中的兩個之間。隔離結構是隔離溝槽。第一類型的LED 01、第二類型的LED 02和第三類型的LED 03由第一金屬層101、第一類型的發光層102、第二金屬層201、第二類型的發光層202、第三金屬層301和第三類型的發光層302形成。圖3中的第一類型的LED 01和第二類型的LED 02與圖2中的第一類型的LED 01和第二類型的LED 02相同。具體地，如圖3中所展示的，第一類型的LED 01按從底至頂的順序至少包括第一金屬層的第一區段101-1和第一類型的發光層的第一區段102-1。第二類型的LED 02按從底至頂的順序至少包括第一金屬層的第二區段101-2、第一類型的發光層的第二區段102-2、第二金屬層的第一區段201-1和第二類型的發光層的第一區段202-1，以及第一電連接器203。第三類型的LED 03按從底至頂的順序至少包括第一金屬層的第三區段101-3、第一類型的發光層的第三區段102-3、第二金屬層的第二區段201-2、第二類型的發光層的第二區段202-2、第三金屬層的第一區段301-1和第三類型的發光層的第一區段302-1，以及第二電連接器303。如圖3所示，第一金屬層的第一區段101-1、第一金屬層的第二區段101-2和第一金屬層的第三區段101-3與基板100電連接。第二類型的LED 02中的第一電連接器203將第二金屬層的第一區段201-1與第一金屬層的第二區段101-2電連接。第三類型的LED 03中的第二電連接器303將第三金屬層的第一區段301-1與第二金屬層的第二區段201-2和第一金屬層的第三區段101-3電連接。隔離結構07將第一類型的LED 01中的第一金屬層的第一區段101-1與第二類型的LED 02中的第一金屬層的第二區段101-2和第三類型的LED 03中的第一金屬層的第三區段101-3隔離，將第一類型的LED 01中的第一類型的發光層的第一區段102-1與第二類型的LED 02中的第一類型的發光層的第二區段102-2和第三類型的LED 03中的第一類型的發光層的第三區段102-3隔離，將第二類型的LED 02中的第二金屬層的第一區段201-1與第三類型的LED 03中的第二金屬層的第二區段201-2隔離，並且將第二類型的LED 02中的第二類型的發光層的第一區段202-1與第三類型的LED 03中的第二類型的發光層的第二區段202-2隔離。應當注意的是，第一電連接器203用於將第二類型的LED 02中的第一類型的發光層的第二區段102-2與第一金屬層的第二區段101-2連接，而第二電連接器303用於將第三類型的LED 03中的第二類型的發光層的第二區段202-2和第一類型的發光層的第三區段102-3與第一金屬層的第三區段101-3連接。因此，為了簡化製造過程，以與圖1相同的方式，第一電連接器203還將第一類型的發光層的第二區段102-2與第一金屬層的第二區段101-2連接。即，在第二類型的LED 02中，第一電連接器203將第二金屬層的第一區段201-1和第一類型的發光層的第二區段102-2與第一金屬層的第二區段101-2連接。第二電連接器303還將第二類型的發光層的第二區段202-2與第一金屬層的第三區段101-3連接。即，在第三類型的LED 03中，第二電連接器303將第三金屬層的第一區段301-1、第二類型的發光層的第二區段202-2和第二金屬層的第二區段201-2與第一金屬層的第三區段101-3連接。替代性地，第二電連接器303還將第二類型的發光層的第二區段202-2和第一類型的發光層的第三區段102-3與第一金屬層的第三區段101-3連接。即，在第三類型的LED 03中，第二電連接器303將第三金屬層的第一區段301-1、第二類型的發光層的第二區段202-2、第二金屬層的第二區段201-2和第一類型的發光層的第三區段102-3與第一金屬層的第三區段101-3連接。此外，第一電連接器203的底部和第二電連接器303的底部分別且直接地接觸基板100，從而簡化了製造過程。應當注意的是，第一電連接器203和第二電連接器303的材料由導電金屬形成。在實施方案中，第二電連接器303附接到並接觸第三類型的LED 03的側壁表面。Referring back to Figure 3, an isolation structure 07 is arranged between two of the first type LED 01, the second type LED 02 and the third type LED 03. The isolation structure is an isolation trench. The first type LED 01, the second type LED 02 and the third type LED 03 are composed of a first metal layer 101, a first type luminescent layer 102, a second metal layer 201, a second type luminescent layer 202, a A three-metal layer 301 and a third type light-emitting layer 302 are formed. The first type of LED 01 and the second type of LED 02 in FIG. 3 are the same as the first type of LED 01 and the second type of LED 02 in FIG. 2 . Specifically, as shown in FIG. 3 , the first type LED 01 includes at least a first section 101 - 1 of the first metal layer and a first section of the first type luminescent layer in order from bottom to top. 102-1. The second type LED 02 includes at least a second section 101-2 of the first metal layer, a second section 102-2 of the first type light-emitting layer, and a first section of the second metal layer in order from bottom to top. Section 201 - 1 and a first section 202 - 1 of a second type of luminescent layer, and a first electrical connector 203 . The third type of LED 03 includes at least a third section 101-3 of the first metal layer, a third section 102-3 of the first type of light-emitting layer, and a second section of the second metal layer in order from bottom to top. section 201-2, a second section 202-2 of a second type of luminescent layer, a first section 301-1 of a third metal layer, and a first section 302-1 of a third type of luminescent layer, and Second electrical connector 303. As shown in FIG. 3 , the first section 101 - 1 of the first metal layer, the second section 101 - 2 of the first metal layer, and the third section 101 - 3 of the first metal layer are electrically connected to the substrate 100 . The first electrical connector 203 in the second type LED 02 electrically connects the first section 201 - 1 of the second metal layer with the second section 101 - 2 of the first metal layer. The second electrical connector 303 in the third type LED 03 connects the first section 301 - 1 of the third metal layer with the second section 201 - 2 of the second metal layer and the third section of the first metal layer. 101-3 Electrical connection. The isolation structure 07 separates the first section 101 - 1 of the first metal layer in the LED 01 of the first type with the second section 101 - 2 of the first metal layer in the LED 02 of the second type and the third type The third section 101 - 3 of the first metal layer in the LED 03 isolates the first section 102 - 1 of the first type of luminescent layer in the first type of LED 01 from the first section 102 - 1 of the first type of luminescent layer in the second type of LED 02 The second section 102 - 2 of the first type of luminescent layer and the third section 102 - 3 of the first type of luminescent layer in the third type of LED 03 are isolated, the second section of the second type of LED 02 The first section 201 - 1 of the metal layer is isolated from the second section 201 - 2 of the second metal layer in the third type LED 03 and separates the second section 201 - 2 of the second type luminescent layer in the second type LED 02 The first section 202-1 is isolated from the second section 202-2 of the second type of luminescent layer in the third type of LED 03. It should be noted that the first electrical connector 203 is used to connect the second section 102-2 of the first type of light-emitting layer in the second type of LED 02 with the second section 101-2 of the first metal layer. , and the second electrical connector 303 is used to connect the second section 202-2 of the second type of luminescent layer and the third section 102-3 of the first type of luminescent layer in the third type of LED 03 with the A third section 101-3 of a metal layer is connected. Therefore, in order to simplify the manufacturing process, in the same way as in FIG. 1 , the first electrical connector 203 also connects the second section 102 - 2 of the first type of luminescent layer with the second section 101 - 2 of the first metal layer. connection. That is, in the second type LED 02, the first electrical connector 203 connects the first section 201-1 of the second metal layer and the second section 102-2 of the first type light emitting layer to the first metal layer. The second section 101-2 is connected. The second electrical connector 303 also connects the second section 202-2 of the second type of light-emitting layer with the third section 101-3 of the first metal layer. That is, in the third type LED 03, the second electrical connector 303 connects the first section 301-1 of the third metal layer, the second section 202-2 of the second type light-emitting layer and the second metal layer. The second section 201-2 is connected to the third section 101-3 of the first metal layer. Alternatively, the second electrical connector 303 also connects the second section 202 - 2 of the second type of luminescent layer and the third section 102 - 3 of the first type of luminescent layer to the third section of the first metal layer. Section 101-3 is connected. That is, in the third type LED 03, the second electrical connector 303 connects the first section 301-1 of the third metal layer, the second section 202-2 of the second type light-emitting layer, the second metal layer The second section 201-2 and the third section 102-3 of the first type of luminescent layer are connected to the third section 101-3 of the first metal layer. In addition, the bottoms of the first electrical connector 203 and the second electrical connector 303 respectively and directly contact the substrate 100, thereby simplifying the manufacturing process. It should be noted that the materials of the first electrical connector 203 and the second electrical connector 303 are formed of conductive metal. In an embodiment, the second electrical connector 303 is attached to and contacts the sidewall surface of the third type LED 03 .
在一個實施方案中，第一類型的發光層為紅色發光層，第二類型的發光層為綠色發光層，並且第三類型的發光層為藍色發光層，第一類型的LED 01為紅色LED 01，第二類型的LED 02為綠色LED 02，並且第三類型的LED 03為藍色LED 03。在紅色LED 01中，施加在頂部透明導電層05與第一金屬層的第一區段101-1之間的電壓被施加到紅色發光層的第一區段102-1。因此，紅色LED 01中的紅色發光層的第一區段102-1發射紅光。在綠色LED 02中，第一電連接器203將紅色發光層的第二區段102-2與第一金屬層的第二區段101-2電連接，使得施加在頂部透明導電層05與第一金屬層的第二區段101-2之間的電壓僅施加到綠色發光層的第一區段202-1。因此，僅綠色LED 02中的綠色發光層的第一區段202-1發射綠光，而綠色LED 02中的紅色發光層的第二區段102-2不發射光。在第三類型的LED 03中，第二電連接器303將紅色發光層的第三區段102-3和綠色發光層的第二區段202-2與第一金屬層的第三區段101-3電連接，使得施加在頂部透明導電層05與第一金屬層的第三區段101-3之間的電壓僅施加到藍色發光層的第一區段302-1。因此，僅藍色LED 03中的藍色發光層的第一區段302-1發射藍光，而藍色LED 03中的紅色發光層的第三區段102-3和綠色發光層的第二區段202-2不發射光。In one embodiment, the first type of luminescent layer is a red luminescent layer, the second type of luminescent layer is a green luminescent layer, and the third type of luminescent layer is a blue luminescent layer, and the first type of LED 01 is a red LED. 01, a second type of LED 02 is a green LED 02, and a third type of LED 03 is a blue LED 03. In the red LED 01, the voltage applied between the top transparent conductive layer 05 and the first section 101-1 of the first metal layer is applied to the first section 102-1 of the red light-emitting layer. Therefore, the first section 102-1 of the red light-emitting layer in the red LED 01 emits red light. In the green LED 02, the first electrical connector 203 electrically connects the second section 102-2 of the red light-emitting layer with the second section 101-2 of the first metal layer, such that the top transparent conductive layer 05 is connected to the second section 101-2 of the first metal layer. A voltage between the second section 101-2 of the metal layer is applied only to the first section 202-1 of the green light-emitting layer. Therefore, only the first section 202 - 1 of the green light emitting layer in the green LED 02 emits green light, while the second section 102 - 2 of the red light emitting layer in the green LED 02 does not emit light. In the third type of LED 03, the second electrical connector 303 connects the third section 102-3 of the red emitting layer and the second section 202-2 of the green emitting layer with the third section 101 of the first metal layer. -3 are electrically connected such that the voltage applied between the top transparent conductive layer 05 and the third section 101-3 of the first metal layer is applied only to the first section 302-1 of the blue emitting layer. Therefore, only the first section 302-1 of the blue emitting layer in the blue LED 03 emits blue light, while the third section 102-3 of the red emitting layer and the second section of the green emitting layer in the blue LED 03 Segment 202-2 does not emit light.
再次參考圖3，頂部隔離層04和頂部透明導電層05被布置在第一類型的LED 01、第二類型的LED 02和第三類型的LED 03上。頂部隔離層04覆蓋第一類型的發光層的第一區段102-1、第二類型的發光層的第一區段202-1、第三類型的發光層的第一區段302-1和暴露的基板100。開口被布置在頂部隔離層04中，以暴露第一類型的發光層的第一區段102-1、第二類型的發光層的第一區段202-1和第三類型的發光層的第一區段302-1的頂表面的部分。頂部透明導電層05覆蓋頂部隔離層04並且形成在頂部隔離層04的開口中，從而與第一類型的發光層的第一區段102-1的暴露的頂表面、第二類型的發光層的第一區段202-1的暴露的頂表面以及第三類型的發光層的第一區段302-1的暴露的頂表面接觸。3 again, the top isolation layer 04 and the top transparent conductive layer 05 are arranged on the first type of LED 01, the second type of LED 02, and the third type of LED 03. The top isolation layer 04 covers the first segment 102-1 of the first type of light-emitting layer, the first segment 202-1 of the second type of light-emitting layer, the first segment 302-1 of the third type of light-emitting layer, and the exposed substrate 100. An opening is arranged in the top isolation layer 04 to expose a portion of the top surface of the first segment 102-1 of the first type of light-emitting layer, the first segment 202-1 of the second type of light-emitting layer, and the first segment 302-1 of the third type of light-emitting layer. The top transparent conductive layer 05 covers the top isolation layer 04 and is formed in the opening of the top isolation layer 04, thereby contacting the exposed top surface of the first segment 102-1 of the first type of light-emitting layer, the exposed top surface of the first segment 202-1 of the second type of light-emitting layer, and the exposed top surface of the first segment 302-1 of the third type of light-emitting layer.
對具有至少三種類型的LED的多色發光像素單元3000中的基板100的詳細描述對應於圖1的描述，並且在此將不進行重複。應當注意的是，IC基板100中的互連層與第一類型的LED 01、第二類型的LED 02和第三類型的LED 03電連接。IC基板100中的驅動電路分別控制每個LED。The detailed description of the substrate 100 in the multicolor light-emitting pixel unit 3000 having at least three types of LEDs corresponds to the description of FIG. 1 and will not be repeated here. It should be noted that the interconnect layer in the IC substrate 100 is electrically connected to the first type of LED 01, the second type of LED 02, and the third type of LED 03. The driving circuit in the IC substrate 100 controls each LED separately.
在圖1至圖4中的多色發光像素單元1000至4000中，發光層102、202和302中的一個或多個可以具有微間隙結構。例如，在圖1所示的多色發光像素單元1000中，第一類型的發光層102可以具有微間隙結構，或者第二類型的發光層202可以具有微間隙結構，或者第一類型的發光層102和第二類型的發光層202兩者可以具有微間隙結構。作為另一個例子，在圖3所示的多色發光像素單元3000中，第一類型的發光層102可以具有微間隙結構，或者第二類型的發光層202可以具有微間隙結構，或者第三類型的發光層302可以具有微間隙結構，或者第一類型的發光層102和第二類型的發光層202兩者可以具有微間隙結構，或者第二類型的發光層202和第三類型的發光層302兩者可以具有微間隙結構，或者第一類型的發光層102和第三類型的發光層302兩者可以具有微間隙結構，或者第一類型的發光層102、第二類型的發光層202和第三類型的發光層302均可以具有微間隙結構。在此，圖1至圖3中所展示的多色發光像素單元1000至3000中的微間隙結構中的每一個可以是但不限於空氣間隙。空氣間隙被密封。優選地，空氣間隙的截面尺寸不大於2 nm，從而釋放發光層中的應力，並且避免發光層彎曲，而不影響發光層的發光效率。在此，空氣間隙的截面尺寸可以是空氣間隙的截面的直徑、或空氣間隙的截面的長度或寬度。In the multi-color light-emitting pixel units 1000 to 4000 in Figures 1 to 4, one or more of the light-emitting layers 102, 202, and 302 may have a micro-gap structure. For example, in the multi-color light-emitting pixel unit 1000 shown in Figure 1, the first type of light-emitting layer 102 may have a micro-gap structure, or the second type of light-emitting layer 202 may have a micro-gap structure, or both the first type of light-emitting layer 102 and the second type of light-emitting layer 202 may have a micro-gap structure. As another example, in the multi-color light-emitting pixel unit 3000 shown in Figure 3, the first type of light-emitting layer 102 may have a micro-gap structure, or the second type of light-emitting layer 202 may have a micro-gap structure, or the third type of light-emitting layer 302 may have a micro-gap structure, or both the first type of light-emitting layer 102 and the second type of light-emitting layer 202 may have a micro-gap structure, or both the second type of light-emitting layer 202 and the third type of light-emitting layer 302 may have a micro-gap structure, or both the first type of light-emitting layer 102 and the third type of light-emitting layer 302 may have a micro-gap structure, or the first type of light-emitting layer 102, the second type of light-emitting layer 202, and the third type of light-emitting layer 302 may have a micro-gap structure. Here, each of the micro-gap structures in the multi-color luminescent pixel units 1000 to 3000 shown in FIGS. 1 to 3 may be, but is not limited to, an air gap. The air gap is sealed. Preferably, the cross-sectional size of the air gap is no greater than 2 nm, thereby releasing the stress in the luminescent layer and avoiding bending of the luminescent layer without affecting the luminescent efficiency of the luminescent layer. Here, the cross-sectional size of the air gap may be the diameter of the cross section of the air gap, or the length or width of the cross section of the air gap.
圖5是展示根據本公開文本的實施方案的多色發光像素單元5000的截面視圖。如圖5所示，第一類型的發光層102、第二類型的發光層202和第三類型的發光層302中的每一個可以具有多個微間隙結構06。微間隙結構06中的每一個沿著垂直於基板100的方向延伸，並穿過對應的發光層，諸如第一類型的發光層102、第二類型的發光層202或第三類型的發光層302。當在實施方案中使用多個發光層時，微間隙結構06被布置在至少一個發光層中，優選地在頂部發光層中。5 is a cross-sectional view showing a multi-color light emitting pixel unit 5000 according to an embodiment of the present disclosure. As shown in FIG. 5 , each of the first type of light emitting layer 102 , the second type of light emitting layer 202 and the third type of light emitting layer 302 may have a plurality of micro gap structures 06 . Each of the micro-gap structures 06 extends in a direction perpendicular to the substrate 100 and passes through a corresponding light-emitting layer, such as the first type of light-emitting layer 102 , the second type of light-emitting layer 202 , or the third type of light-emitting layer 302 . When multiple luminescent layers are used in embodiments, the microgap structure 06 is arranged in at least one luminescent layer, preferably in the top luminescent layer.
仍參考圖5，微間隙結構06在多個發光層中相互錯開。即，第一類型的發光層102中的微間隙結構06不與第二類型的發光層202中的微間隙結構06豎直對準，並且第二類型的發光層202中的微間隙結構06不與第三類型的發光層302中的微間隙結構06豎直對準。在第二類型的LED 02和第三類型的LED 03中的每一個中，在第一類型的發光層102中的微間隙結構被隔離和密封在第一類型的發光層102頂部的第二金屬層201與其底部的第一金屬層101之間。在第三類型的LED 03中，在第二類型的發光層202中的微間隙結構06被隔離和密封在第二發光層202頂部的第三金屬層301與其底部的第二金屬層201之間，並且在第三類型的發光層302中的微間隙結構06被隔離和密封在第三類型的發光層302的頂部的頂部隔離層04與其底部的第三金屬層301之間。Still referring to Figure 5, the micro-gap structures 06 are staggered from each other in multiple light-emitting layers. That is, the microgap structures 06 in the first type of light emitting layer 102 are not vertically aligned with the microgap structures 06 in the second type of light emitting layer 202 , and the microgap structures 06 in the second type of light emitting layer 202 are not vertically aligned. Vertically aligned with the microgap structure 06 in the third type of light emitting layer 302 . In each of the second type LED 02 and the third type LED 03 , a microgap structure in the first type light emitting layer 102 is isolated and sealed by a second metal on top of the first type light emitting layer 102 between layer 201 and the first metal layer 101 at its bottom. In the third type of LED 03, the micro-gap structure 06 in the second type of light-emitting layer 202 is isolated and sealed between the third metal layer 301 on top of the second light-emitting layer 202 and the second metal layer 201 on the bottom of the second type of LED 03 , and the micro-gap structure 06 in the third type of light-emitting layer 302 is isolated and sealed between the top isolation layer 04 on the top of the third type of light-emitting layer 302 and the third metal layer 301 on the bottom thereof.
以類似的方式，在本公開文本的另一個實施方案中的包括第一至第M類型的LED的多色發光像素單元中，第M類型的LED具有M個發光層，並且金屬層被布置在每個發光層的底部，其中M是正整數並且大於或等於數量二。在第一至第M類型的LED中的每一個中，頂部導電層(作為上部導電層)被布置在頂部發光層的頂部，使得頂部發光層中的微間隙結構可以被隔離和密封在頂部導電層與頂部發光層底部的金屬層之間。每個發光層中的微間隙結構被隔離和密封在分別處於相對發光層的頂部和底部的金屬層之間。In a similar manner, in another embodiment of the present disclosure, in a multicolor light-emitting pixel unit including first to M-th types of LEDs, the M-th type of LED has M light-emitting layers, and a metal layer is arranged at the bottom of each light-emitting layer, where M is a positive integer and is greater than or equal to the number two. In each of the first to M-th types of LEDs, a top conductive layer (as an upper conductive layer) is arranged at the top of the top light-emitting layer, so that a micro-gap structure in the top light-emitting layer can be isolated and sealed between the top conductive layer and the metal layer at the bottom of the top light-emitting layer. The micro-gap structure in each light-emitting layer is isolated and sealed between the metal layers at the top and bottom of the relative light-emitting layer, respectively.
此外，類似於圖1至圖4中的多色發光像素單元1000至4000，根據本公開文本的另一個實施方案的多色發光像素單元包括多個LED(包括第一類型的LED至第M類型的LED)。第M類型的LED至少包括第(M-1)類型的LED中構造的所有發光層和金屬層以及第M發光層和第M金屬層。在此基礎上，第M類型的LED具有第(M-1)電連接器，所述電連接器連接到第M金屬層、第(M-1)金屬層……以及第一金屬層。此外，第(M-1)電連接器可以連接到第M金屬層、第(M-1)類型的發光層、第(M-1)金屬層……第一類型的發光層以及第一金屬層。第(M-1)電連接器的布置可以參考對圖1中的第一電連接器203的描述。第一至第(M-1)電連接器連接第一至第M金屬層，並且第一至第(M-1)電連接器可以直接接觸基板和第一金屬層。在此，從第一類型的LED到第M類型的LED存在差異。此外，每種LED可以選自紅色LED、綠色LED、藍色LED、黃色LED、橙色LED、紫色LED或青色LED。在此，不同顏色的LED為常規的LED，其為本領域技術人員已知的，並且在此將不進行描述。此外，第一類型的LED至第M類型的LED在同一基板上被間隔開。頂部隔離層覆蓋基板的暴露表面以及第一至第M類型的LED的暴露表面。每一種類型LED的頂部隔離層具有其開口，並且透明導電層覆蓋頂部隔離層的表面並被填充在開口中，其中處於開口的底部的透明導電層與每一種類型的LED的頂部發光層電接觸。參考圖4和圖5，在具有M種類型的LED的像素單元中，第一至第M類型的LED的發光區域的大小彼此不同。根據像素單元中的LED的布置，第一類型的LED的發光面積的大小大於其他類型的LED的發光面積的大小。可選地，第一類型的LED為紅色LED，其發光面積大於其他類型的LED的發光面積。替代性地，其他類型的LED至少包括綠色LED或藍色LED。In addition, similar to the multi-color light emitting pixel units 1000 to 4000 in FIGS. 1 to 4 , a multi-color light emitting pixel unit according to another embodiment of the present disclosure includes a plurality of LEDs (including first to Mth type LEDs). LED). The M-th type LED includes at least all the light-emitting layers and metal layers constructed in the (M-1)-th type LED and the M-th light-emitting layer and the M-th metal layer. On this basis, the M-th type LED has the (M-1)th electrical connector, which is connected to the M-th metal layer, the (M-1)-th metal layer... and the first metal layer. In addition, the (M-1)th electrical connector may be connected to the Mth metal layer, the (M-1)th type luminescent layer, the (M-1)th metal layer... the first type luminescent layer and the first metal layer. The arrangement of the (M-1)th electrical connector may refer to the description of the first electrical connector 203 in FIG. 1 . The first to (M-1)th electrical connectors connect the first to M-th metal layers, and the first to (M-1)th electrical connectors may directly contact the substrate and the first metal layer. Here, there is a difference from the first type of LED to the M-th type of LED. Additionally, each LED can be selected from red LEDs, green LEDs, blue LEDs, yellow LEDs, orange LEDs, violet LEDs, or cyan LEDs. Here, the LEDs of different colors are conventional LEDs, which are known to those skilled in the art and will not be described here. In addition, the first to M-th type LEDs are spaced apart on the same substrate. The top isolation layer covers the exposed surface of the substrate and the exposed surfaces of the first to M-th types of LEDs. The top isolation layer of each type of LED has its opening, and the transparent conductive layer covers the surface of the top isolation layer and is filled in the opening, wherein the transparent conductive layer at the bottom of the opening is in electrical contact with the top light-emitting layer of each type of LED . Referring to FIGS. 4 and 5 , in a pixel unit having M types of LEDs, the sizes of the light emitting areas of the first to M-th types of LEDs are different from each other. According to the arrangement of the LEDs in the pixel unit, the size of the light-emitting area of the first type of LED is larger than the size of the light-emitting area of the other types of LEDs. Optionally, the first type of LED is a red LED, and its light-emitting area is larger than that of other types of LEDs. Alternatively, other types of LEDs include at least green LEDs or blue LEDs.
還提供了根據本公開文本的實施方案的一種多色微型顯示面板。所述微型顯示面板包括呈矩陣布置的多個多色像素單元。在此的多色像素單元可以是上述的LED像素單元。A multi-color micro display panel according to embodiments of the present disclosure is also provided. The micro display panel includes a plurality of multi-color pixel units arranged in a matrix. The multi-color pixel unit here may be the above-mentioned LED pixel unit.
下面結合附圖，將對製造多色發光像素單元的方法進行以下進一步描述。The method of manufacturing a multi-color light-emitting pixel unit will be further described below in conjunction with the accompanying drawings.
圖6是展示根據本公開文本的實施方案的製造圖1所示的多色發光像素單元的方法的流程圖。圖7至圖10是展示根據本公開文本的實施方案的在圖6中所展示的步驟中形成的結構的截面視圖。參考圖6，製造如圖1所示的多色發光像素單元的方法包括以下步驟。FIG6 is a flow chart showing a method for manufacturing the multi-color light-emitting pixel unit shown in FIG1 according to an embodiment of the present disclosure. FIG7 to FIG10 are cross-sectional views showing structures formed in the steps shown in FIG6 according to an embodiment of the present disclosure. Referring to FIG6, the method for manufacturing the multi-color light-emitting pixel unit shown in FIG1 includes the following steps.
在步驟S601中，參考圖7，在基板100上從底至頂形成包括第一金屬層101、第一類型的發光層102、第二金屬層201、以及第二類型的發光層202的堆疊結構。換言之，將第一類型的發光層102和第二類型的發光層202從底至頂堆疊在基板100上。將第一金屬層101形成在第一類型的發光層102的底部。將第二金屬層201形成在第二類型的發光層202的底部。將第二金屬層201布置在第一類型的發光層102與第二發光層202之間。In step S601, referring to FIG. 7, a stacked structure including a first metal layer 101, a first type of luminescent layer 102, a second metal layer 201, and a second type of luminescent layer 202 is formed on the substrate 100 from bottom to top. . In other words, the first type of light emitting layer 102 and the second type of light emitting layer 202 are stacked on the substrate 100 from bottom to top. The first metal layer 101 is formed at the bottom of the first type light emitting layer 102 . A second metal layer 201 is formed at the bottom of the second type light emitting layer 202 . The second metal layer 201 is arranged between the first type of luminescent layer 102 and the second luminescent layer 202 .
更具體地，基板100可以是但不限於IC基板。More specifically, the substrate 100 may be, but is not limited to, an IC substrate.
圖11是展示根據本公開文本的實施方案的在圖6中的步驟S601的細節的流程圖。圖12至圖21是展示根據本公開文本的實施方案的在圖11中所展示的步驟中形成的結構的截面視圖。參考圖11，步驟S601進一步包括以下具體步驟。Fig. 11 is a flow chart showing the details of step S601 in Fig. 6 according to an embodiment of the present disclosure. Fig. 12 to Fig. 21 are cross-sectional views showing the structure formed in the step shown in Fig. 11 according to an embodiment of the present disclosure. Referring to Fig. 11, step S601 further includes the following specific steps.
在步驟S101中，參考圖12，在基板100上形成第一金屬接合層M01，在第一基底B1上形成第一類型的發光層102，並且在第一類型的發光層102的頂部上形成第二金屬接合層M02。In step S101, referring to FIG. 12, a first metal bonding layer M01 is formed on the substrate 100, a first type luminescent layer 102 is formed on the first substrate B1, and a third type luminescent layer 102 is formed on top of the first type luminescent layer 102. Two metal bonding layers M02.
更具體地，第一金屬接合層M01可以通過但不限於物理氣相沉積(諸如蒸發、濺射等)來製備。第一基底B1的材料是根據第一類型的發光層102來設計的。例如，第一基底B1可以是氮化鎵(GaN)基底。第一類型的發光層102可以通過但不限於在第一基底B1上外延生長來形成。第二金屬接合層M02可以通過但不限於物理氣相沉積(諸如蒸發)來製備。More specifically, the first metal bonding layer M01 may be prepared by, but not limited to, physical vapor deposition (such as evaporation, sputtering, etc.). The material of the first substrate B1 is designed according to the first type of light-emitting layer 102 . For example, the first substrate B1 may be a gallium nitride (GaN) substrate. The first type of light-emitting layer 102 may be formed by, but is not limited to, epitaxial growth on the first substrate B1. The second metal bonding layer M02 may be prepared by, but not limited to, physical vapor deposition such as evaporation.
在步驟S102中，結合圖12，參考圖13，將第一基底B1上下倒置，使得第二金屬接合層M02面向第一金屬接合層M01，並且然後將第二金屬接合層M02與第一金屬接合層M01接合以形成第一金屬層101。In step S102 , referring to FIG. 12 and FIG. 13 , the first substrate B1 is turned upside down so that the second metal bonding layer M02 faces the first metal bonding layer M01 , and then the second metal bonding layer M02 is bonded to the first metal bonding layer M01 to form a first metal layer 101 .
在步驟S103中，結合圖13，參考圖14，移除第一基底B1。In step S103, referring to FIG. 13 and FIG. 14, the first substrate B1 is removed.
在此，在移除第一基底B1之後，參考圖15，步驟S103可以進一步包括：減薄第一類型的發光層102。Here, after removing the first substrate B1, referring to FIG. 15 , step S103 may further include: thinning the first type light emitting layer 102.
此外，根據實施方案，在移除第一基底B1或減薄第一類型的發光層102之後，並且在形成第三金屬接合層之前，參考圖16，步驟S103可以進一步包括：在第一類型的發光層102中形成微間隙結構06。微間隙結構06是通過但不限於光刻法和蝕刻形成的。在光刻法中，根據微間隙結構06的尺寸來設計光刻圖案。根據實施方案，微間隙結構圖案的截面尺寸不大於2 nm。在此，空氣間隙的截面尺寸可以是空氣間隙的截面的直徑、或空氣間隙的截面的長度或寬度。In addition, according to an embodiment, after removing the first substrate B1 or thinning the first type of light-emitting layer 102 and before forming the third metal bonding layer, referring to FIG. 16 , step S103 may further include: Micro-gap structures 06 are formed in the light-emitting layer 102 . Microgap structure 06 is formed by, but not limited to, photolithography and etching. In the photolithography method, the photolithography pattern is designed according to the size of the microgap structure 06 . According to an embodiment, the cross-sectional size of the microgap structural pattern is no greater than 2 nm. Here, the cross-sectional size of the air gap may be the diameter of the cross-section of the air gap, or the length or width of the cross-section of the air gap.
在步驟S104中，參考圖17，在第一類型的發光層102上形成第三金屬接合層M03，在第二基底B2上形成第二類型的發光層202，並且在第二類型的發光層202的頂部上形成第四金屬接合層M04。In step S104, referring to FIG. 17 , a third metal bonding layer M03 is formed on the first type of light emitting layer 102, a second type of light emitting layer 202 is formed on the second substrate B2, and a fourth metal bonding layer M04 is formed on the top of the second type of light emitting layer 202.
在步驟S105中，結合圖17，參考圖18，將第二基底B2上下倒置，使得第四金屬接合層M04面向第三金屬接合層M03，並且將第四金屬接合層M04與第三金屬接合層M03接合以形成第二金屬層201。In step S105 , referring to FIG. 17 and FIG. 18 , the second substrate B2 is turned upside down so that the fourth metal bonding layer M04 faces the third metal bonding layer M03 , and the fourth metal bonding layer M04 is bonded to the third metal bonding layer M03 to form a second metal layer 201 .
在步驟S106中，結合圖18，參考圖19，移除第二基底B2。In step S106, referring to FIG. 18 and FIG. 19, the second substrate B2 is removed.
在此，在移除第二基底B2之後，參考圖20，在步驟S106中，減薄第二類型的發光層202。Here, after the second substrate B2 is removed, referring to FIG. 20 , in step S106 , the second type light-emitting layer 202 is thinned.
根據實施方案，在移除第二基底B2或減薄第二類型的發光層202之後，參考圖21，在步驟S106中，在第二類型的發光層202中形成微間隙結構06。微間隙結構06採用類似於在第一類型的發光層102中形成微間隙結構06的過程來形成。因此，將不重複描述在第二類型的發光層202中形成微間隙結構06的過程。According to the embodiment, after removing the second substrate B2 or thinning the second type of light emitting layer 202, referring to FIG. 21, in step S106, a micro-gap structure 06 is formed in the second type of light emitting layer 202. The micro-gap structure 06 is formed by a process similar to that of forming the micro-gap structure 06 in the first type of light emitting layer 102. Therefore, the process of forming the micro-gap structure 06 in the second type of light emitting layer 202 will not be repeatedly described.
返回參考圖6至圖10，在下文中將進一步描述根據本公開文本的實施方案的在步驟S601之後的過程。Referring back to FIGS. 6 to 10 , the process after step S601 according to embodiments of the present disclosure will be further described below.
在步驟S602中，參考圖8，對第二類型的發光層202和第二金屬層201進行圖案化，直到暴露第一類型的發光層102的頂部的一部分為止，從而在第一類型的發光層102上形成由第二類型的發光層202製成的台階結構。In step S602, referring to FIG. 8 , the second type of light emitting layer 202 and the second metal layer 201 are patterned until a portion of the top of the first type of light emitting layer 102 is exposed, thereby forming a step structure made of the second type of light emitting layer 202 on the first type of light emitting layer 102.
更具體地，對第二類型的發光層202和第二金屬層201進行圖案化的過程可以通過光刻法和電漿蝕刻來執行。對第二類型的發光層202和第二金屬層201進行圖案化的過程還包括：對第一類型的發光層102的頂部進行過蝕刻。圖案化過程的參數可以根據實際需要進行設定，在此將不對其進行限制。More specifically, the process of patterning the second type light emitting layer 202 and the second metal layer 201 may be performed by photolithography and plasma etching. The process of patterning the second type of light-emitting layer 202 and the second metal layer 201 also includes: over-etching the top of the first type of light-emitting layer 102. The parameters of the patterning process can be set according to actual needs and will not be limited here.
在步驟S603中，參考圖9，根據預設的第一類型的發光區A01和預設的第二類型的發光區A02，對第二類型的發光層202、第二金屬層201、第一類型的發光層102和第一金屬層101進行蝕刻，從而將第一類型的發光區A01中的第一類型的發光層102與第二類型的發光區A02中的第一類型的發光層102進行劃分，並且將第一類型的發光區A01中的第一金屬層101與第二類型的發光區A02中的第一金屬層101進行劃分。作為步驟S603的結果，形成包括第一金屬層的第一區段101-1和第一類型的發光層的第一區段102-1的第一類型的LED 01，以及包括第一金屬層的第二區段101-2、第一類型的發光層的第二區段102-2、第二金屬層的第一區段201-1和第二類型的發光層的第二區段202-1的第二類型的LED 02。In step S603, referring to FIG9, according to the preset first type of light-emitting area A01 and the preset second type of light-emitting area A02, the second type of light-emitting layer 202, the second metal layer 201, the first type of light-emitting layer 102 and the first metal layer 101 are etched to separate the first type of light-emitting layer 102 in the first type of light-emitting area A01 from the first type of light-emitting layer 102 in the second type of light-emitting area A02, and to separate the first metal layer 101 in the first type of light-emitting area A01 from the first metal layer 101 in the second type of light-emitting area A02. As a result of step S603, a first type of LED 01 including a first segment 101-1 of a first metal layer and a first segment 102-1 of a first type of light-emitting layer, and a second type of LED 02 including a second segment 101-2 of a first metal layer, a second segment 102-2 of a first type of light-emitting layer, a first segment 201-1 of a second metal layer, and a second segment 202-1 of a second type of light-emitting layer are formed.
在此，對第二類型的發光層202、第二金屬層201、第一類型的發光層102和第一金屬層101進行蝕刻的過程是通過光刻法和蝕刻來執行的。蝕刻過程的參數可以根據實際需要進行設定。Here, the process of etching the second type light emitting layer 202, the second metal layer 201, the first type light emitting layer 102 and the first metal layer 101 is performed by photolithography and etching. The parameters of the etching process can be set according to actual needs.
根據實施方案，作為步驟S603的結果，根據預設的像素單元陣列將多個多色發光像素單元相互劃分。以此方式，像素單元和/或像素單元陣列中的發光電晶體可以通過一個劃分步驟來製備，這簡化了過程，並且降低了生產成本，尤其促進了大規模生產。According to an embodiment, as a result of step S603, a plurality of multi-color emitting pixel units are divided into each other according to a preset pixel unit array. In this way, the pixel unit and/or the light-emitting transistor in the pixel unit array can be prepared in one divided step, which simplifies the process and reduces the production cost, especially facilitating mass production.
在步驟S604中，參考圖10，在第一類型的發光層的第一區段102-1和第二類型的發光區A02中的第二類型的發光層的第一區段202-1的頂部上形成用作第二金屬層201的引出電極的共享頂部電極層05。In step S604, referring to FIG. 10 , a shared top electrode layer 05 serving as an extraction electrode of the second metal layer 201 is formed on top of the first segment 102-1 of the first type of light emitting layer and the first segment 202-1 of the second type of light emitting layer in the second type of light emitting area A02.
圖22是展示根據本公開文本的實施方案的在圖6中的步驟S604的細節的流程圖。圖23至圖25是展示根據本公開文本的實施方案的在圖22中所展示的步驟中形成的結構的截面視圖。參考圖22，步驟S604的具體過程包括以下步驟。Fig. 22 is a flow chart showing the details of step S604 in Fig. 6 according to an embodiment of the present disclosure. Fig. 23 to Fig. 25 are cross-sectional views showing the structure formed in the step shown in Fig. 22 according to an embodiment of the present disclosure. Referring to Fig. 22, the specific process of step S604 includes the following steps.
在步驟S401中，參考圖23，移除第二類型的發光層的第一區段202-1的一部分，從而暴露第二金屬層的第一區段201-1的一部分。In step S401, referring to FIG. 23, a part of the first section 202-1 of the second type of light-emitting layer is removed, thereby exposing a part of the first section 201-1 of the second metal layer.
在步驟S402中，參考圖24，在第二類型的發光區A02中的第二金屬層的第一區段201-1的側壁和頂部上、第一類型的發光層的第二區段102-2的側壁上和第一金屬層的第二區段101-2的側壁上形成第一電連接器203。In step S402, referring to FIG. 24, on the sidewalls and top of the first section 201-1 of the second metal layer in the second type light-emitting area A02, the second section 102- of the first type of light-emitting layer is A first electrical connector 203 is formed on the sidewall of the first metal layer 2 and on the sidewall of the second section 101-2 of the first metal layer.
圖26至圖27是展示根據本公開文本的實施方案的在製造第一電連接器203的步驟中形成的結構的截面視圖。在步驟S402中，第一電連接器203通過以下具體步驟形成。26-27 are cross-sectional views showing structures formed in a step of manufacturing the first electrical connector 203 according to embodiments of the present disclosure. In step S402, the first electrical connector 203 is formed through the following specific steps.
在步驟S4021中，結合圖24，參考圖26，形成遮罩Y以遮蔽沒有第一電連接器203的區，從而暴露第二類型的發光區A02中的第二金屬層的第一區段201-1的頂部和側壁、第一類型的發光層的第二區段102-2的側壁和第一金屬層的第二區段101-2的側壁。In step S4021, in combination with Figure 24 and referring to Figure 26, a mask Y is formed to shield the area without the first electrical connector 203, thereby exposing the top and side walls of the first segment 201-1 of the second metal layer in the second type of light-emitting area A02, the side walls of the second segment 102-2 of the first type of light-emitting layer, and the side walls of the second segment 101-2 of the first metal layer.
在步驟S4022中，參考圖27，在完成步驟S4021之後，在基板100上沉積導電材料203’。In step S4022, referring to FIG. 27 , after completing step S4021, a conductive material 203′ is deposited on the substrate 100.
在步驟S4023中，再次參考圖10，移除遮罩Y和遮罩Y上的導電材料203’，從而在第二類型的發光區A02的第二金屬層的第一區段201-1的頂部和側壁上、第一類型的發光層的第二區段102-2的側壁上和第一金屬層的第二區段101-2的側壁上形成第一電連接器203。In step S4023, referring again to FIG. 10, the mask Y and the conductive material 203' on the mask Y are removed, so that on top of the first section 201-1 of the second metal layer of the second type light-emitting area A02 A first electrical connector 203 is formed on the sidewalls, on the sidewalls of the second section 102-2 of the first type of light-emitting layer, and on the sidewalls of the second section 101-2 of the first metal layer.
在下文中將進一步描述製造共享頂部電極層05的過程。The process of manufacturing the shared top electrode layer 05 will be further described below.
在步驟S403中，參考圖25，形成隔離層04以覆蓋第一類型的發光區A01、第二類型的發光區A02和暴露的基板100的表面。隔離層04在第一類型的發光區A01的第一類型的發光層的第一區段102-1和第二類型的發光區A02的第二類型的發光層的第一區段202-1上具有開口。In step S403 , referring to FIG. 25 , an isolation layer 04 is formed to cover the first type light emitting area A01 , the second type light emitting area A02 and the exposed surface of the substrate 100 . The isolation layer 04 is on the first section 102 - 1 of the first type of luminescent layer of the first type of luminescent region A01 and the first section 202 - 1 of the second type of luminescent layer of the second type of luminescent region A02 Has an opening.
在步驟S404中，再次參考圖10，在步驟S403之後，通過例如沉積來在整個基板100上形成連續的共享頂部電極層05。形成在開口中的共享頂部電極層05連接至第一類型的發光區A01中的第一類型的發光層的第一區段102-1和第二類型的發光區A02中的第二類型的發光層的第一區段202-1。In step S404, referring again to FIG10, after step S403, a continuous shared top electrode layer 05 is formed on the entire substrate 100 by, for example, deposition. The shared top electrode layer 05 formed in the opening is connected to the first segment 102-1 of the first type of light emitting layer in the first type of light emitting region A01 and the first segment 202-1 of the second type of light emitting layer in the second type of light emitting region A02.
圖28展示了根據本公開文本的實施方案的多色發光像素單元的結構，所述多色發光像素單元在第一類型的發光層102和第二類型的發光層202中具有微間隙結構。FIG28 shows the structure of a multi-color light-emitting pixel unit according to an implementation scheme of the present disclosure, wherein the multi-color light-emitting pixel unit has a micro-gap structure in the first type of light-emitting layer 102 and the second type of light-emitting layer 202.
圖29是展示根據本公開文本的實施方案的製造如圖3所示的多色發光像素單元3000的方法的流程圖。圖30至圖34是展示根據本公開文本的實施方案的在圖6中所展示的步驟中形成的結構的截面視圖。參考圖29，製造如圖3所示的多色發光像素單元3000的方法包括以下步驟。29 is a flowchart illustrating a method of manufacturing the multi-color light-emitting pixel unit 3000 shown in FIG. 3 according to an embodiment of the present disclosure. 30-34 are cross-sectional views showing structures formed in the steps shown in FIG. 6 according to embodiments of the present disclosure. Referring to FIG. 29 , a method of manufacturing the multi-color emitting pixel unit 3000 shown in FIG. 3 includes the following steps.
在步驟S701中，參考圖30，在基板100上按從底至頂的順序形成包括第一金屬層101、第一類型的發光層102、第二金屬層201、第二類型的發光層202、第三金屬層301和第三類型的發光層302的堆疊結構。換言之，將第一類型的發光層102、第二類型的發光層202和第三類型的發光層302從底至頂堆疊在基板100上。將第一金屬層101形成在第一類型的發光層102的底部。將第二金屬層201形成在第二類型的發光層202的底部。將第三金屬層301形成在第三類型的發光層302的底部。將第二金屬層201布置在第一類型的發光層102與第二類型的發光層202之間。將第三金屬層301布置在第二類型的發光層202與第三類型的發光層302之間。In step S701, referring to FIG. 30 , a stacked structure including a first metal layer 101, a first type of light emitting layer 102, a second metal layer 201, a second type of light emitting layer 202, a third metal layer 301, and a third type of light emitting layer 302 is formed in order from bottom to top on a substrate 100. In other words, the first type of light emitting layer 102, the second type of light emitting layer 202, and the third type of light emitting layer 302 are stacked from bottom to top on the substrate 100. The first metal layer 101 is formed at the bottom of the first type of light emitting layer 102. The second metal layer 201 is formed at the bottom of the second type of light emitting layer 202. The third metal layer 301 is formed at the bottom of the third type light emitting layer 302. The second metal layer 201 is arranged between the first type light emitting layer 102 and the second type light emitting layer 202. The third metal layer 301 is arranged between the second type light emitting layer 202 and the third type light emitting layer 302.
圖35是展示根據本公開文本的實施方案的在圖29中的步驟S701的細節的流程圖。結合圖30，參考圖35，步驟S701進一步包括以下步驟。應注意，在本實施方案的步驟S801至S809中形成的結構在附圖中未示出。但是本領域技術人員可以參考上述實施方案的步驟S101至S109來理解本實施方案的步驟S801至S809。35 is a flowchart showing details of step S701 in FIG. 29 according to an embodiment of the present disclosure. With reference to Figure 30 and Figure 35, step S701 further includes the following steps. It should be noted that the structures formed in steps S801 to S809 of this embodiment are not shown in the drawings. However, those skilled in the art can refer to steps S101 to S109 of the above embodiment to understand steps S801 to S809 of this embodiment.
在步驟S801中，在基板100上形成第一金屬接合層，在第一基底上形成第一類型的發光層102，並且在第一類型的發光層102的頂部上形成第二金屬接合層。In step S801, a first metal bonding layer is formed on the substrate 100, a first type of light emitting layer 102 is formed on the first base, and a second metal bonding layer is formed on top of the first type of light emitting layer 102.
更具體地，第一金屬接合層可以通過但不限於物理氣相沉積(諸如蒸發、濺射等)來製備。第一基底的材料是根據第一類型的發光層10來設計的。例如，第一基底可以是氮化鎵(GaN)基底。第一類型的發光層102可以通過但不限於在第一基底上外延生長來製成。第二金屬接合層可以通過但不限於物理氣相沉積(諸如蒸發)來製備。More specifically, the first metal bonding layer may be prepared by, but not limited to, physical vapor deposition (such as evaporation, sputtering, etc.). The material of the first substrate is designed according to the first type of light-emitting layer 10 . For example, the first substrate may be a gallium nitride (GaN) substrate. The first type of light-emitting layer 102 may be made by, but not limited to, epitaxial growth on a first substrate. The second metal bonding layer may be prepared by, but is not limited to, physical vapor deposition such as evaporation.
在步驟S802中，將第一基底上下倒置，使得第二金屬接合層面向第一金屬接合層，並且將第二金屬接合層與第一金屬接合層接合以形成第一金屬層101。In step S802, the first substrate is turned upside down so that the second metal bonding layer faces the first metal bonding layer, and the second metal bonding layer is bonded to the first metal bonding layer to form the first metal layer 101.
在步驟S803中，移除第一基底。In step S803, the first substrate is removed.
在此，在移除第一基底之後，步驟S803可以進一步包括：減薄第一類型的發光層102。此外，在移除第一基底或減薄第一類型的發光層102之後，並且在形成第三金屬接合層之前，參考圖36，步驟S803可以進一步包括：在第一類型的發光層102中形成微間隙結構06。微間隙結構06是通過但不限於光刻法和蝕刻形成的。在光刻法中，根據微間隙結構06的尺寸來設計光刻圖案。根據實施方案，微間隙結構圖案的截面尺寸不大於2 nm。Here, after removing the first substrate, step S803 may further include: thinning the first type of light emitting layer 102. In addition, after removing the first substrate or thinning the first type of light emitting layer 102, and before forming the third metal bonding layer, referring to FIG. 36, step S803 may further include: forming a micro-gap structure 06 in the first type of light emitting layer 102. The micro-gap structure 06 is formed by, but not limited to, photolithography and etching. In the photolithography, the photolithography pattern is designed according to the size of the micro-gap structure 06. According to the embodiment, the cross-sectional size of the micro-gap structure pattern is not greater than 2 nm.
在步驟S804中，在第一類型的發光層102上形成第三金屬接合層，在第二基底上形成第二類型的發光層202，並且在第二類型的發光層202的頂部上形成第四金屬接合層。In step S804, a third metal bonding layer is formed on the first type of light emitting layer 102, a second type of light emitting layer 202 is formed on the second substrate, and a fourth metal bonding layer is formed on the top of the second type of light emitting layer 202.
在步驟S805中，將第二基底上下倒置，使得第四金屬接合層面向第三金屬接合層，並且然後將第四金屬接合層與第三金屬接合層接合以形成第二金屬層201。In step S805, the second substrate is turned upside down so that the fourth metal bonding layer faces the third metal bonding layer, and then the fourth metal bonding layer is bonded to the third metal bonding layer to form a second metal layer 201.
在步驟S806中，移除第二基底。In step S806, the second substrate is removed.
在此，在移除第二基底之後，步驟S106可以進一步包括：減薄第二類型的發光層202。此外，在移除第二基底或減薄第二類型的發光層202之後，參考圖36，步驟S106進一步包括：在第二類型的發光層202中形成微間隙結構06。微間隙結構06可以使用與上述形成微間隙結構06的過程類似的過程來形成。因此，將不重複描述形成微間隙結構06的過程。Here, after removing the second substrate, step S106 may further include: thinning the second type of light emitting layer 202. In addition, after removing the second substrate or thinning the second type of light emitting layer 202, referring to FIG. 36, step S106 further includes: forming a micro-gap structure 06 in the second type of light emitting layer 202. The micro-gap structure 06 may be formed using a process similar to the above-described process of forming the micro-gap structure 06. Therefore, the process of forming the micro-gap structure 06 will not be repeatedly described.
在步驟S807中，在第二類型的發光層202上形成第五金屬接合層，在第三基底上形成第三類型的發光層302，並且在第三類型的發光層302的頂部上形成第六金屬接合層。In step S807, a fifth metal bonding layer is formed on the second type of luminescent layer 202, a third type of luminescent layer 302 is formed on the third substrate, and a sixth type of luminescent layer 302 is formed on top of the third type of luminescent layer 302. Metal bonding layer.
在步驟S808中，將第三基底上下倒置，使得第六金屬接合層面向第五金屬接合層，並且然後將第六金屬接合層與第五金屬接合層接合以形成第三金屬層301。In step S808, the third substrate is turned upside down so that the sixth metal bonding layer faces the fifth metal bonding layer, and then the sixth metal bonding layer is bonded to the fifth metal bonding layer to form a third metal layer 301.
在步驟S809中，移除第三基底。In step S809, the third substrate is removed.
在此，在移除第三基底之後，步驟S109可以進一步包括：減薄第三類型的發光層302。此外，在移除第三基底或減薄第三類型的發光層302之後，參考圖36，步驟S109進一步包括：在第三類型的發光層302中形成微間隙結構06。微間隙結構06可以使用與上述形成微間隙結構06的過程類似的過程來形成。因此，將不重複描述形成微間隙結構06的過程。Here, after removing the third substrate, step S109 may further include: thinning the third type of light-emitting layer 302. In addition, after removing the third substrate or thinning the third type of light-emitting layer 302, referring to FIG. 36, step S109 further includes: forming a micro-gap structure 06 in the third type of light-emitting layer 302. Micro-gap structure 06 may be formed using a process similar to that described above for forming micro-gap structure 06. Therefore, the process of forming the microgap structure 06 will not be described repeatedly.
圖36展示了第一類型的發光層102、第二類型的發光層202和第三類型的發光層302中的微間隙結構06。Figure 36 shows the microgap structure 06 in the first type of light emitting layer 102, the second type of light emitting layer 202 and the third type of light emitting layer 302.
返回參考圖30至圖34，在下文中將進一步描述步驟S701之後的過程。Referring back to FIGS. 30 to 34 , the process after step S701 will be further described below.
在步驟S702中，參考圖31，對第三類型的發光層302和第三金屬層301進行圖案化，直到暴露第二類型的發光層202的頂部的一部分為止，從而在第二類型的發光層202上形成由第三類型的發光層302製成的台階結構。In step S702, referring to FIG. 31 , the third type of light emitting layer 302 and the third metal layer 301 are patterned until a portion of the top of the second type of light emitting layer 202 is exposed, thereby forming a step structure made of the third type of light emitting layer 302 on the second type of light emitting layer 202.
更具體地，台階結構包括第三類型的發光層302和第三金屬層301。對第三類型的發光層302和第三金屬層301進行圖案化的過程還包括：對第一類型的發光層102的頂部進行過蝕刻。More specifically, the stepped structure includes a third type of light emitting layer 302 and a third metal layer 301. The process of patterning the third type of light emitting layer 302 and the third metal layer 301 further includes: etching the top of the first type of light emitting layer 102.
在步驟S703中，參考圖32，進一步對第二類型的發光層202和第二金屬層201進行圖案化，直到暴露第一類型的發光層202的頂部的一部分為止，從而在第一類型的發光層102上形成由第二類型的發光層202製成的台階結構。In step S703, referring to FIG. 32 , the second type of light emitting layer 202 and the second metal layer 201 are further patterned until a portion of the top of the first type of light emitting layer 202 is exposed, thereby forming a step structure made of the second type of light emitting layer 202 on the first type of light emitting layer 102.
更具體地，台階結構由第二類型的發光層202和第二金屬層201製成。圖案化過程可以通過光刻法和電漿蝕刻來執行。對第二類型的發光層202和第二金屬層201進行圖案化的過程還包括：對第一類型的發光層102的頂部進行過蝕刻。圖案化過程的參數可以根據實際需要進行設定，在此將不對其進行限制。More specifically, the step structure is made of the second type of light emitting layer 202 and the second metal layer 201 . The patterning process can be performed by photolithography and plasma etching. The process of patterning the second type of light-emitting layer 202 and the second metal layer 201 also includes: over-etching the top of the first type of light-emitting layer 102. The parameters of the patterning process can be set according to actual needs and will not be limited here.
在步驟S704中，參考圖33，根據預設的第一類型的發光區A01、預設的第二類型的發光區A02和預設的第三類型的發光區A03，對第三類型的發光層302、第三金屬層301、第二類型的發光層202、第二金屬層201、第一類型的發光層102和第一金屬層101進行蝕刻，從而將第一類型的發光區A01中的第一類型的發光層102與第二類型的發光區A02和第三類型的發光區A03中的第一類型的發光層進行劃分，將第一類型的發光區A01中的第一金屬層101與第二類型的發光區A02和第三類型的發光區A03中的第一金屬層進行劃分，將第二類型的發光區A02中的第二類型的發光層202與第三類型的發光區A03中的第二類型的發光層進行劃分，並且將第二類型的發光區A02中的第二金屬層201與第三類型的發光區A03中的第二金屬層進行劃分。作為步驟S704的結果，形成了：包括第一金屬層的第一區段101-1和第一類型的發光層的第一區段102-1的第一類型的LED 01；包括第一金屬層的第二區段101-2、第一類型的發光層的第二區段102-2、第二金屬層的第一區段201-1和第二類型的發光層的第一區段202-1的第二類型的LED 02；以及包括第一金屬層的第三區段101-3、第一類型的發光層的第三區段102-3、第二金屬層的第二區段201-2、第二類型的發光層的第二區段202-2、第三金屬層的第一區段301-1和第三類型的發光層的第一區段302-1的第三類型的LED 03。In step S704, referring to FIG. 33, according to the preset first type of luminescent area A01, the preset second type of luminescent area A02 and the preset third type of luminescent area A03, the third type of luminescent layer 302, the third metal layer 301, the second type of luminescent layer 202, the second metal layer 201, the first type of luminescent layer 102 and the first metal layer 101 are etched, so as to separate the first type of luminescent layer 102 in the first type of luminescent area A01 from the second type of luminescent area A02 and the third type of luminescent area A03. The first type of light-emitting layer in area A03 is divided, the first metal layer 101 in the first type of light-emitting area A01 is divided from the second type of light-emitting area A02 and the first metal layer in the third type of light-emitting area A03, the second type of light-emitting layer 202 in the second type of light-emitting area A02 is divided from the second type of light-emitting layer in the third type of light-emitting area A03, and the second metal layer 201 in the second type of light-emitting area A02 is divided from the second metal layer in the third type of light-emitting area A03. As a result of step S704, there are formed: a first type of LED 01 including a first segment 101-1 of a first metal layer and a first segment 102-1 of a first type of light-emitting layer; a second type of LED 02 including a second segment 101-2 of the first metal layer, a second segment 102-2 of the first type of light-emitting layer, a first segment 201-1 of the second metal layer, and a first segment 202-1 of the second type of light-emitting layer; and a third type of LED 03 including a third segment 101-3 of the first metal layer, a third segment 102-3 of the first type of light-emitting layer, a second segment 201-2 of the second metal layer, a second segment 202-2 of the second type of light-emitting layer, a first segment 301-1 of the third metal layer, and a first segment 302-1 of the third type of light-emitting layer.
在此，蝕刻過程是通過光刻法和蝕刻過程執行的，其參數可以根據實際需要進行設定。Here, the etching process is performed through photolithography and etching process, and its parameters can be set according to actual needs.
根據實施方案，作為步驟S704的結果，根據預設的像素單元陣列將多個多色發光像素單元相互劃分。因此，像素單元和/或像素單元陣列中的發光電晶體可以透過一個劃分步驟來製備，這簡化了過程，並且降低了生產成本，尤其促進了大規模生產。According to an embodiment, as a result of step S704, a plurality of multi-color emitting pixel units are divided into each other according to a preset pixel unit array. Therefore, the light-emitting transistors in the pixel unit and/or the pixel unit array can be prepared in one dividing step, which simplifies the process and reduces the production cost, especially facilitating mass production.
在步驟S705中，參考圖34，在第一類型的發光層的第一區段102-1、第二類型的發光層的第一區段202-1和第三類型的發光層中的第一區段302-1的頂部上形成用作第二金屬層的第一區段201-1的引出電極和第三金屬層的第一區段301-1的引出電極的共享頂部電極層05。In step S705, referring to Figure 34, a shared top electrode layer 05 serving as a lead-out electrode of the first segment 201-1 of the second metal layer and a lead-out electrode of the first segment 301-1 of the third metal layer is formed on the top of the first segment 102-1 of the first type of light-emitting layer, the first segment 202-1 of the second type of light-emitting layer, and the first segment 302-1 of the third type of light-emitting layer.
圖37是展示根據本公開文本的實施方案的在圖29中的步驟S705的細節的流程圖。圖38至圖40是展示在圖37中所展示的步驟中形成的結構的截面視圖。參考圖37，步驟S705進一步包括以下步驟。Figure 37 is a flowchart showing details of step S705 in Figure 29, according to an embodiment of the present disclosure. 38 to 40 are cross-sectional views showing the structure formed in the steps shown in FIG. 37 . Referring to Figure 37, step S705 further includes the following steps.
在步驟S501中，參考圖38，移除第三類型的發光層的第一區段302-1的一部分和第二類型的發光層的第一區段202-1的一部分，從而暴露第二金屬層的第一區段201-1的一部分和第三金屬層的第一區段301-1的一部分。In step S501, referring to FIG. 38, a portion of the first segment 302-1 of the third type light emitting layer and a portion of the first segment 202-1 of the second type light emitting layer are removed, thereby exposing a portion of the first segment 201-1 of the second metal layer and a portion of the first segment 301-1 of the third metal layer.
在步驟S502中，參考圖39，在第二類型的發光區A02中的第二金屬層的第一區段201-1的側壁和頂部上、第一類型的發光層的第二區段102-2的側壁上和第一金屬層的第二區段101-2的側壁上形成第一電連接器203，並且在第三類型的發光區A03中的第三金屬層的第一區段301-1的頂部和側壁上、第二類型的發光層的第二區段202-2的側壁上、第二金屬層的第二區段201-2的側壁上、第一類型的發光層的第三區段102-3的側壁上和第一金屬層的第三區段101-3的側壁上形成第二電連接器303。In step S502, referring to FIG. 39, a first electrical connector 203 is formed on the side walls and top of the first segment 201-1 of the second metal layer in the second type of light-emitting area A02, on the side walls of the second segment 102-2 of the first type of light-emitting layer, and on the side walls of the second segment 101-2 of the first metal layer, and a second electrical connector 303 is formed on the top and side walls of the first segment 301-1 of the third metal layer in the third type of light-emitting area A03, on the side walls of the second segment 202-2 of the second type of light-emitting layer, on the side walls of the second segment 201-2 of the second metal layer, on the side walls of the third segment 102-3 of the first type of light-emitting layer, and on the side walls of the third segment 101-3 of the first metal layer.
更具體地，參考圖39，製造第一電連接器203和第二電連接器303的過程進一步包括以下步驟。應注意，以下步驟S5021至S5023在附圖中未示出，但是本領域技術人員可以參考上述實施方案的步驟S4021至S4023來理解步驟S5021至S5023。More specifically, referring to FIG. 39 , the process of manufacturing the first electrical connector 203 and the second electrical connector 303 further includes the following steps. It should be noted that the following steps S5021 to S5023 are not shown in the drawings, but those skilled in the art can understand steps S5021 to S5023 with reference to steps S4021 to S4023 of the above embodiment.
在步驟S5021中，在基板100上形成遮罩以遮蔽沒有第一電連接器203和第二電連接器303的區，從而暴露第二類型的發光區A02中的第二金屬層的第一區段201-1的頂部和側壁、第一類型的發光層的第二區段102-2的側壁和第一金屬層的第二區段101-2的側壁，並且暴露第三類型的發光區A03中的第三金屬層的第一區段301-1的頂部和側壁、第二類型的發光層的第二區段202-2的側壁、第二金屬層的第二區段201-2的側壁、第一類型的發光層的第三區段102-3的側壁和第一金屬層的第三區段101-3的側壁。In step S5021, a mask is formed on the substrate 100 to shield an area without the first electrical connector 203 and the second electrical connector 303, thereby exposing the first area of the second metal layer in the second type light emitting area A02. The top and side walls of the section 201-1, the side walls of the second section 102-2 of the first type of luminescent layer and the side walls of the second section 101-2 of the first metal layer, and expose the third type of luminescent area A03 The top and side walls of the first section 301-1 of the third metal layer, the side walls of the second section 202-2 of the second type of luminescent layer, the side walls of the second section 201-2 of the second metal layer , the sidewalls of the third section 102-3 of the first type of luminescent layer and the sidewalls of the third section 101-3 of the first metal layer.
在步驟S5022中，在完成步驟S5021之後，在基板100上沉積導電材料。In step S5022, after completing step S5021, a conductive material is deposited on the substrate 100.
在步驟S5023中，參考圖39，移除遮罩和遮罩上的導電材料，從而在第二類型的發光區A02中的第二金屬層的第一區段201-1的頂部和側壁上、第一類型的發光層的第二區段102-2的側壁上和第一金屬層的第二區段101-2的側壁上形成第一電連接器203，並且在第三類型的發光區A03中的第三金屬層的第一區段301-1的頂部和側壁上、第二類型的發光層的第二區段202-2的側壁上、第二金屬層的第二區段201-2的側壁上、第一類型的發光層的第三區段102-3的側壁上和第一金屬層的第三區段101-3的側壁上形成第二電連接器303。In step S5023, referring to FIG. 39, the mask and the conductive material on the mask are removed, so that on the top and side walls of the first section 201-1 of the second metal layer in the second type light-emitting area A02, A first electrical connector 203 is formed on the sidewall of the second section 102-2 of the first type of luminescent layer and on the sidewall of the second section 101-2 of the first metal layer, and is formed in the third type of luminescent area A03 On the top and side walls of the first section 301-1 of the third metal layer, on the side walls of the second section 202-2 of the second type of light-emitting layer, on the second section 201-2 of the second metal layer A second electrical connector 303 is formed on the sidewall of the third section 102-3 of the first type of light-emitting layer and on the sidewall of the third section 101-3 of the first metal layer.
在下文中將進一步描述製造共享頂部電極層05的過程。The process of manufacturing the shared top electrode layer 05 will be further described below.
在步驟S503中，參考圖40，形成隔離層04以覆蓋第一類型的發光區A01、第二類型的發光區A02、第三類型的發光區A03和暴露的基板100的表面。隔離層04在第一類型的發光層的第一區段102-1上、第二類型的發光層的第一區段202-1上和第三類型的發光層的第一區段302-1上具有開口。In step S503 , referring to FIG. 40 , an isolation layer 04 is formed to cover the first type light emitting area A01 , the second type light emitting area A02 , the third type light emitting area A03 and the exposed surface of the substrate 100 . The isolation layer 04 is on the first section 102 - 1 of the luminescent layer of the first type, the first section 202 - 1 of the luminescent layer of the second type and the first section 302 - 1 of the luminescent layer of the third type. There is an opening on it.
在步驟S504中，再次參考圖34，在步驟S503之後，在整個基板100上形成連續的共享頂部電極層05。在開口中沉積的共享頂部電極層05連接至第一類型的發光層的第一區段102-1、連接至第二類型的發光層的第一區段202-1以及連接至第三類型的發光層302的第一區段。In step S504, referring again to FIG. 34, after step S503, a continuous shared top electrode layer 05 is formed on the entire substrate 100. The shared top electrode layer 05 deposited in the opening is connected to the first section 102-1 of the luminescent layer of the first type, to the first section 202-1 of the luminescent layer of the second type, and to the first section 202-1 of the luminescent layer of the third type. First section of luminescent layer 302 .
如上所提及的，在根據本公開文本的實施方案的製造多色發光像素單元的方法中，由於在每種類型的LED的膜沉積過程可以同時執行，因此LED可以同時製備而無需分別製備，從而簡化了製造多色發光像素單元和微型LED顯示面板的過程，並且促進了大規模生產。由於根據本公開文本的實施方案的製造方法，不同類型的LED並排布置在同一基板上，其彼此之間的距離短。因此，可以減小LED和由LED製成的顯示面板的大小。例如，每個LED的大小可以是40 µm × 40 µm。此外，不同類型的LED的頂部不在同一水平面。也就是說，不同類型的LED的高度不同，從而在不同類型的LED的頂部上暴露不同類型的發光層，因此確保了發光面積並改善了每個LED的發光效率，並且改善了各種LED的整合度。由本公開文本的實施方案的像素單元形成的微型LED顯示面板具有清晰的畫面顯示和高分辨率。此外，由於電連接器連接第M類型的LED中的每個金屬層，因此第M類型的LED中的第M類型的發光層(其為頂部發光層)可以發射光，而第M類型的LED中的其他發光層由於設置在其他每個發光層兩側的金屬層彼此電連接而短路。例如，在第M類型的LED中，第一類型的發光層由於設置在第一類型的發光層兩側的第一類型的金屬層和第二類型的金屬層相互電連接而短路；第二類型的發光層由於設置在第二類型的發光層兩側的第二類型的金屬層和第三類型的金屬層相互電連接而短路；以此類推。因此，各種類型的LED在不相互影響的情況下單獨地發射光。此外，發光層中的微間隙可以釋放發光層內部的應力，並且避免其翹曲，而不影響發光層的發光效率，因此改善了產品良率。As mentioned above, in the method for manufacturing a multi-color light-emitting pixel unit according to the embodiment of the present disclosure, since the film deposition process of each type of LED can be performed simultaneously, the LEDs can be prepared at the same time without being prepared separately, thereby simplifying the process of manufacturing multi-color light-emitting pixel units and micro-LED display panels and promoting large-scale production. Due to the manufacturing method according to the embodiment of the present disclosure, different types of LEDs are arranged side by side on the same substrate with a short distance between them. Therefore, the size of the LED and the display panel made of the LED can be reduced. For example, the size of each LED can be 40 µm × 40 µm. In addition, the tops of different types of LEDs are not on the same horizontal plane. That is, different types of LEDs have different heights, thereby exposing different types of light-emitting layers on the tops of different types of LEDs, thereby ensuring the light-emitting area and improving the light-emitting efficiency of each LED, and improving the integration of various LEDs. The micro-LED display panel formed by the pixel unit of the embodiment of the present disclosure has a clear picture display and high resolution. In addition, since the electrical connector connects each metal layer in the Mth type of LED, the Mth type of light-emitting layer (which is the top light-emitting layer) in the Mth type of LED can emit light, while the other light-emitting layers in the Mth type of LED are short-circuited because the metal layers arranged on both sides of each other light-emitting layer are electrically connected to each other. For example, in the Mth type of LED, the first type of light-emitting layer is short-circuited due to the mutual electrical connection between the first type of metal layer and the second type of metal layer disposed on both sides of the first type of light-emitting layer; the second type of light-emitting layer is short-circuited due to the mutual electrical connection between the second type of metal layer and the third type of metal layer disposed on both sides of the second type of light-emitting layer; and so on. Therefore, the various types of LEDs emit light individually without affecting each other. In addition, the micro gaps in the light-emitting layer can release the stress inside the light-emitting layer and prevent its warping without affecting the light-emitting efficiency of the light-emitting layer, thereby improving the product yield.
圖41是展示根據本公開文本的實施方案的製造微型LED顯示面板的方法的流程圖。41 is a flowchart illustrating a method of manufacturing a micro LED display panel according to an embodiment of the present disclosure.
在步驟S4101中，也參考圖42 (其是展示在步驟S4101中形成的結構的截面視圖)，在晶圓基板500上按從底至頂的順序形成包括第一金屬層101、第一類型的發光層102、第二金屬層201、以及第二類型的發光層202的堆疊結構。在晶圓基板500上形成堆疊結構的過程類似於參考圖11-圖21所解釋的在基板100上形成堆疊結構的過程。因此，將不再重複對步驟S4101的詳細解釋。In step S4101, with reference also to FIG. 42 (which is a cross-sectional view showing the structure formed in step S4101), a first metal layer including a first metal layer 101, a first type of A stack structure of the light-emitting layer 102, the second metal layer 201, and the second type of light-emitting layer 202. The process of forming the stacked structure on the wafer substrate 500 is similar to the process of forming the stacked structure on the substrate 100 explained with reference to FIGS. 11-21 . Therefore, the detailed explanation of step S4101 will not be repeated.
在步驟S4102中，參考圖43 (其是展示在步驟S4102中形成的結構的截面視圖)和圖44 (其是展示在步驟S4102中形成的結構的俯視圖)，在堆疊結構中形成溝槽600。可以通過從堆疊結構的頂部蝕刻到堆疊結構的底部，直到暴露晶圓基板500來形成溝槽600。溝槽600在晶圓基底500上限定多個微型LED顯示面板區域550。相鄰的微型LED顯示面板區域550通過形成在其間的溝槽600而彼此分離。所述多個微型LED顯示面板區域550用於形成多個微型LED顯示面板。In step S4102, with reference to FIG. 43 (which is a cross-sectional view showing the structure formed in step S4102) and FIG. 44 (which is a top view showing the structure formed in step S4102), a trench 600 is formed in the stacked structure. Trench 600 may be formed by etching from the top of the stacked structure to the bottom of the stacked structure until wafer substrate 500 is exposed. The trenches 600 define a plurality of micro LED display panel areas 550 on the wafer substrate 500 . Adjacent micro LED display panel areas 550 are separated from each other by trenches 600 formed therebetween. The multiple micro LED display panel areas 550 are used to form multiple micro LED display panels.
在步驟S4103中，參考圖45 (其是在執行步驟S4103後圖43的結構的M部分的截面視圖)，對整個晶圓基板500上的第二類型的發光層202和第二金屬層201進行圖案化(即選擇性地蝕刻)，直到第一類型的發光層102的頂表面的部分被暴露，從而在整個晶圓基板500上形成多個台階結構。在步驟S4103中執行的過程與在步驟S602中執行的過程類似，其參考圖8進行解釋。因此，將不再重複對步驟S4103的詳細解釋。在步驟S4103中的蝕刻過程期間，通過蝕刻產生的應力可以經由溝槽600釋放，從而防止晶圓基板500由於應力而翹曲。In step S4103, referring to FIG. 45 (which is a cross-sectional view of the M portion of the structure of FIG. 43 after executing step S4103), the second type of light emitting layer 202 and the second metal layer 201 on the entire wafer substrate 500 are patterned (i.e., selectively etched) until a portion of the top surface of the first type of light emitting layer 102 is exposed, thereby forming a plurality of step structures on the entire wafer substrate 500. The process performed in step S4103 is similar to the process performed in step S602, which is explained with reference to FIG. 8. Therefore, the detailed explanation of step S4103 will not be repeated. During the etching process in step S4103, stress generated by etching may be released through the groove 600, thereby preventing the wafer substrate 500 from warping due to stress.
在步驟S4104中，參考圖46 (其是展示在執行步驟S4104後的M部分的截面視圖)，整個晶圓基板500上的第二類型的發光層202、第二金屬層201、第一類型的發光層102、以及第一金屬層101被選擇性地蝕刻以暴露第一金屬層101的側表面。作為執行步驟S4104的結果，在每個微型LED顯示面板區域550中形成多個第一類型的LED 01和多個第二類型的LED 02。每個第一類型的LED 01包括第一金屬層的第一區段101-1和第一類型的發光層的第一區段102-1。每個第二類型的LED 02包括第一金屬層的第二區段101-2、第一類型的發光層的第二區段102-2、第二金屬層的第一區段201-1和第二類型的發光層的第一區段202-1。在步驟S4104中執行的過程與在步驟S603中執行的過程類似，其參考圖9進行解釋。因此，將不再重複對步驟S4104的詳細解釋。在步驟S4104中的蝕刻過程期間，通過蝕刻產生的應力可以經由溝槽600釋放，從而防止晶圓基板500由於應力而翹曲。In step S4104, referring to FIG. 46 (which is a cross-sectional view showing part M after step S4104 is performed), the second type of light emitting layer 202, the second metal layer 201, the first type of light emitting layer 202 on the entire wafer substrate 500 The light-emitting layer 102 and the first metal layer 101 are selectively etched to expose side surfaces of the first metal layer 101. As a result of performing step S4104, a plurality of first type LEDs 01 and a plurality of second type LEDs 02 are formed in each micro LED display panel area 550. Each first type LED 01 includes a first section 101 - 1 of a first metal layer and a first section 102 - 1 of a first type luminescent layer. Each second type LED 02 includes a second section 101-2 of the first metal layer, a second section 102-2 of the first type luminescent layer, a first section 201-1 of the second metal layer and First section 202-1 of a second type of luminescent layer. The process performed in step S4104 is similar to the process performed in step S603, which is explained with reference to FIG. 9 . Therefore, the detailed explanation of step S4104 will not be repeated. During the etching process in step S4104, stress generated by etching may be released via the trench 600, thereby preventing the wafer substrate 500 from warping due to stress.
在步驟S4105中，參考圖47 (其是執行步驟S4105後的M部分的截面視圖)，在每個第二類型的LED 02中，形成用於電連接第一金屬層的第二區段101-2和第二金屬層的第一區段201-1的電連接器。此外，在每個微型LED顯示面板區域550中，在所述多個第一類型的LED 01中的第一類型的發光層的第一區段102-1的頂部上以及在所述多個第二類型的LED 02中的第二類型的發光層的第一區段202-1的頂部上形成共享頂部電極層05 (其作為第二金屬層201的引出電極)。步驟S4105中執行的過程與在步驟S604中執行的過程類似，其參考圖10和圖22-28進行解釋。因此，將不再重複對步驟S4105的詳細解釋。In step S4105, referring to FIG. 47 (which is a cross-sectional view of the M portion after executing step S4105), an electrical connector for electrically connecting the second segment 101-2 of the first metal layer and the first segment 201-1 of the second metal layer is formed in each second type LED 02. In addition, in each micro LED display panel region 550, a shared top electrode layer 05 (which serves as an extraction electrode of the second metal layer 201) is formed on the top of the first segment 102-1 of the first type of light-emitting layer in the plurality of first type LEDs 01 and on the top of the first segment 202-1 of the second type of light-emitting layer in the plurality of second type LEDs 02. The process performed in step S4105 is similar to the process performed in step S604, which is explained with reference to Figure 10 and Figures 22-28. Therefore, the detailed explanation of step S4105 will not be repeated.
在步驟S4106中，參考圖48 (其是展示在步驟S4106中形成的結構的俯視圖)，具有在步驟S4101至S4105中形成的結構的晶圓基板500沿著圖44中展示的溝槽600被切割貫穿晶圓基板500，從而形成多個微型LED顯示面板650。In step S4106, referring to FIG. 48 (which is a top view showing the structure formed in step S4106), the wafer substrate 500 having the structure formed in steps S4101 to S4105 is cut through the wafer substrate 500 along the grooves 600 shown in FIG. 44, thereby forming a plurality of micro LED display panels 650.
如上所提及的，在根據本公開文本的實施方案的製造微型LED顯示面板的方法中，在蝕刻堆疊結構之前，在堆疊結構中形成溝槽。因此，在堆疊結構的蝕刻過程中產生的應力可以經由溝槽釋放，從而防止晶圓基板由於應力而翹曲。因此，由此可以提高微型LED顯示面板的品質。As mentioned above, in the method of manufacturing a micro LED display panel according to embodiments of the present disclosure, the trench is formed in the stack structure before etching the stack structure. Therefore, stress generated during the etching process of the stacked structure can be released via the trench, thereby preventing the wafer substrate from warping due to stress. Therefore, the quality of the micro LED display panel can be improved.
雖然本發明已經參考其優選實施方案進行了具體地示出和描述，但本領域技術人員將理解，在不脫離由所附申請專利範圍限定的本發明的精神和範圍的情況下，可以對本文做出形式和細節上的各種改變。While the present invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
01:第一類型的LED,紅色LED 02:第二類型的LED,綠色LED 03:第三類型的LED,藍色LED 04:頂部隔離層,隔離層 05:頂部透明導電層,頂部電極層,共享頂部電極層 06:微間隙結構 07:隔離結構 100:IC基板,基板 101:第一金屬層 101-1:第一金屬層的第一區段 101-2:第一金屬層的第二區段 101-3:第一金屬層的第三區段 102,202,302:發光層 102:第一類型的發光層 102-1:第一類型的發光層的第一區段,紅色發光層的第一區段 102-2:第一類型的發光層的第二區段,紅色發光層的第二區段 102-3:第一類型的發光層的第三區段,紅色發光層的第三區段 201:第二金屬層 201-1:第二金屬層的第一區段 201-2:第二金屬層的第二區段 202:第二類型的發光層 202-1:第二類型的發光層的第一區段,綠色發光層的第一區段 202-2:第二類型的發光層的第二區段,綠色發光層的第二區段 203:第一電連接器 203’:導電材料 301:第三金屬層 301-1:第三金屬層的第一區段 302:第三類型的發光層 302-1:第三類型的發光層的第一區段,藍色發光層的第一區段 303:第二電連接器 500:晶圓基板 550:微型LED顯示面板區域 600:溝槽 1000,2000,3000,4000:多色發光像素單元 A01:第一類型的發光區 A02:第二類型的發光區 A03:第三類型的發光區 B1:第一基底 B2:第二基底 M01:第一金屬接合層 M02:第二金屬接合層 M03:第三金屬接合層 M04:第四金屬接合層 S101~S106,S401~S404,S501~S504,S601~S604,S701~S705,S801~S809,S4101~S4106,S5021~S5023:步驟 Y:遮罩 01: first type of LED, red LED 02: second type of LED, green LED 03: third type of LED, blue LED 04: top isolation layer, isolation layer 05: top transparent conductive layer, top electrode layer, shared top electrode layer 06: micro-gap structure 07: isolation structure 100: IC substrate, substrate 101: first metal layer 101-1: first section of first metal layer 101-2: second section of first metal layer 101-3: third section of first metal layer 102,202,302: light-emitting layer 102: first type of light-emitting layer 102-1: first segment of the first type of light-emitting layer, first segment of the red light-emitting layer 102-2: second segment of the first type of light-emitting layer, second segment of the red light-emitting layer 102-3: third segment of the first type of light-emitting layer, third segment of the red light-emitting layer 201: second metal layer 201-1: first segment of the second metal layer 201-2: second segment of the second metal layer 202: second type of light-emitting layer 202-1: first segment of the second type of light-emitting layer, first segment of the green light-emitting layer 202-2: second segment of the second type of light-emitting layer, second segment of the green light-emitting layer 203: first electrical connector 203': conductive material 301: third metal layer 301-1: first section of the third metal layer 302: third type of light-emitting layer 302-1: first section of the third type of light-emitting layer, first section of the blue light-emitting layer 303: second electrical connector 500: wafer substrate 550: micro LED display panel area 600: groove 1000, 2000, 3000, 4000: multi-color light-emitting pixel unit A01: first type of light-emitting area A02: second type of light-emitting area A03: third type of light-emitting area B1: first substrate B2: second substrate M01: first metal bonding layer M02: second metal bonding layer M03: third metal bonding layer M04: fourth metal bonding layer S101~S106,S401~S404,S501~S504,S601~S604,S701~S705,S801~S809,S4101~S4106,S5021~S5023: Steps Y: Mask
圖1是展示根據本公開文本的實施方案的多色發光像素單元的截面視圖。1 is a cross-sectional view showing a multi-color light emitting pixel unit according to an embodiment of the present disclosure.
圖2是展示根據本公開文本的實施方案的多色發光像素單元的截面視圖。2 is a cross-sectional view showing a multi-color light emitting pixel unit according to an embodiment of the present disclosure.
圖3是展示根據本公開文本的實施方案的多色發光像素單元的截面視圖。FIG3 is a cross-sectional view showing a multi-color light-emitting pixel unit according to an embodiment of the present disclosure.
圖4是根據本公開文本的實施方案的多色發光像素單元的俯視圖。FIG4 is a top view of a multi-color light-emitting pixel unit according to an implementation scheme of the present disclosure.
圖5是展示根據本公開文本的實施方案的多色發光像素單元的截面視圖。5 is a cross-sectional view showing a multi-color light emitting pixel unit according to an embodiment of the present disclosure.
圖6是展示根據本公開文本的實施方案的製造在圖1中所展示的多色發光像素單元的方法的流程圖。FIG. 6 is a flow chart showing a method for manufacturing the multi-color light-emitting pixel unit shown in FIG. 1 according to an implementation scheme of the present disclosure.
圖7至圖10是展示根據本公開文本的實施方案的在圖6中的方法的步驟中形成的結構的截面視圖。7 to 10 are cross-sectional views showing structures formed in the steps of the method in FIG. 6 according to an embodiment of the present disclosure.
圖11是展示根據本公開文本的實施方案的在圖6中的步驟S601的細節的流程圖。FIG11 is a flow chart showing the details of step S601 in FIG6 according to an implementation scheme of the present disclosure.
圖12至圖21是展示根據本公開文本的實施方案的在圖11中的步驟中形成的結構的截面視圖。12-21 are cross-sectional views showing structures formed in the steps of FIG. 11 according to embodiments of the present disclosure.
圖22是展示根據本公開文本的實施方案的在圖6中的步驟S604的細節的流程圖。Figure 22 is a flowchart showing details of step S604 in Figure 6, according to an embodiment of the present disclosure.
圖23至圖25是展示根據本公開文本的實施方案的在圖22中的步驟中形成的結構的截面視圖。23-25 are cross-sectional views showing structures formed in the steps of FIG. 22 according to embodiments of the present disclosure.
圖26和圖27是展示根據本公開文本的實施方案的在製造第一電連接器的過程中形成的結構的截面視圖。26 and 27 are cross-sectional views showing a structure formed in a process of manufacturing a first electrical connector according to an embodiment of the present disclosure.
圖28是展示根據本公開文本的實施方案的具有微間隙結構的多色發光像素單元的截面視圖。28 is a cross-sectional view showing a multi-color light-emitting pixel unit having a micro-gap structure according to an embodiment of the present disclosure.
圖29是展示根據本公開文本的實施方案的製造在圖3中所展示的多色發光像素單元的方法的流程圖。Figure 29 is a flow chart showing a method for manufacturing the multi-color light-emitting pixel unit shown in Figure 3 according to an implementation scheme of the present disclosure.
圖30至圖34是展示根據本公開文本的實施方案的在圖29中的方法的步驟中形成的結構的截面視圖。Figures 30 to 34 are cross-sectional views showing the structure formed in the steps of the method in Figure 29 according to an embodiment of the present disclosure.
圖35是展示根據本公開文本的實施方案的在圖29中的步驟S701的細節的流程圖。35 is a flowchart showing details of step S701 in FIG. 29 according to an embodiment of the present disclosure.
圖36是根據本公開文本的實施方案的形成在三種類型的發光層中的微間隙結構的截面視圖。Figure 36 is a cross-sectional view of a micro-gap structure formed in three types of light-emitting layers according to an implementation scheme of the present disclosure.
圖37是展示根據本公開文本的實施方案的在圖29中的步驟S705的細節的流程圖。Figure 37 is a flow chart showing the details of step S705 in Figure 29 according to the implementation scheme of the present disclosure.
圖38至圖40是展示根據本公開文本的實施方案的在圖37中的步驟中形成的結構的截面視圖。38-40 are cross-sectional views showing structures formed in the steps of FIG. 37 according to embodiments of the present disclosure.
圖41是展示根據本公開文本的實施方案的製造微型LED顯示面板的方法的流程圖。41 is a flowchart illustrating a method of manufacturing a micro LED display panel according to an embodiment of the present disclosure.
圖42是展示在圖41的方法的步驟中形成的結構的截面視圖。42 is a cross-sectional view showing a structure formed during steps of the method of FIG. 41 .
圖43是展示在圖41的方法的步驟中形成的結構的截面視圖。43 is a cross-sectional view showing a structure formed during steps of the method of FIG. 41 .
圖44是展示在圖41的方法的步驟中形成的結構的俯視圖。44 is a top view showing a structure formed during the steps of the method of FIG. 41 .
圖45是展示在圖41的方法的步驟中形成的結構的截面視圖。FIG. 45 is a cross-sectional view showing a structure formed in the steps of the method of FIG. 41.
圖46是展示在圖41的方法的步驟中形成的結構的截面視圖。FIG. 46 is a cross-sectional view showing a structure formed in the steps of the method of FIG. 41.
圖47是展示在圖41的方法的步驟中形成的結構的截面視圖。47 is a cross-sectional view showing a structure formed during steps of the method of FIG. 41 .
圖48是展示在圖41的方法的步驟中形成的結構的俯視圖。FIG. 48 is a top view showing the structure formed in the steps of the method of FIG. 41.
S4101~S4106:步驟 S4101~S4106: Steps
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