TW202410287A - Electrostatic chuck and semiconductor process equipment - Google Patents

Abstract

The present invention relates to an electrostatic chuck and semiconductor process equipment, and provides a support apparatus and semiconductor process equipment. The support apparatus comprises an adhesive platen supporting a processed wafer, and a cooling member and a thermal conductive member disposed at the bottom of the adhesive platen, the thermal conductive member is positioned between the adhesive platen and the cooling member; the cooling member is used for cooling the adhesive platen via the thermal conductive member; the thermal conductive member is used to control the rate of thermal conduction between the cooling member and the adhesive platen. The solution of the present invention can solve the problem in the prior art that the electrostatic chuck cannot reach to a higher temperature due to the cooling speed of the water-cooling disc is too high.

Description

靜電卡盤和半導體製程設備Electrostatic chuck and semiconductor process equipment

本發明涉及半導體製造領域，具體地，涉及一種靜電卡盤和半導體製程設備。The present invention relates to the field of semiconductor manufacturing, and in particular, to an electrostatic chuck and semiconductor processing equipment.

靜電卡盤(Electrostatic Chuck，ESC)在半導體製程中用於吸附被加工物體，如晶圓、托盤等，被廣泛應用於物理氣相沉積(Physical Vapor Deposition，PVD)製程，刻蝕(etch)製程，化學氣相沉積(Chemical Vapor Deposition，CVD)製程，以及離子注入製程等等。靜電卡盤的主要作用是在製程過程中，吸附固定晶圓以及對晶圓進行加熱或冷卻，從而滿足各種半導體製程的需求。Electrostatic Chuck (ESC) is used in the semiconductor manufacturing process to absorb processed objects, such as wafers, pallets, etc., and is widely used in Physical Vapor Deposition (PVD) processes and etching (etch) processes. , chemical vapor deposition (Chemical Vapor Deposition, CVD) process, and ion implantation process, etc. The main function of the electrostatic chuck is to adsorb and fix the wafer and heat or cool the wafer during the manufacturing process, so as to meet the needs of various semiconductor manufacturing processes.

靜電卡盤的加熱功能通常是通過在吸附盤中設置加熱絲來實現，而冷卻功能通常是通過在吸附盤下方設置一個水冷盤來實現。但是，在一些特殊的製程中，靜電卡盤既要加熱晶圓，又要冷卻晶圓，以PVD的Al沉積製程為例，需要先通過溫度控制單元控制加熱絲的加熱功率，以將靜電卡盤加熱至所需的製程溫度，然後通過機械手將晶圓傳入到製程腔室中，並放置於靜電卡盤上；之後開始進行磁控濺射製程，在此過程中，會有等離子體中的離子轟擊晶圓表面，離子的動能會被轉換為熱能，這部分熱量是非常高的，會導致晶圓溫度超過製程溫度，在這種情況下，就需要靜電卡盤除了具備加熱功能外，同時還必須具備冷卻功能，以保持晶圓在整個製程過程期間都能維持在製程溫度之下。The heating function of the electrostatic chuck is usually achieved by setting a heating wire in the adsorption disc, while the cooling function is usually achieved by setting a water cooling plate under the adsorption disc. However, in some special processes, the electrostatic chuck needs to both heat and cool the wafer. Taking the Al deposition process of PVD as an example, it is necessary to control the heating power of the heating wire through the temperature control unit to remove the electrostatic chuck. The disc is heated to the required process temperature, and then the wafer is introduced into the process chamber through a robot and placed on the electrostatic chuck; then the magnetron sputtering process begins. During this process, there will be plasma The ions in the wafer bombard the wafer surface, and the kinetic energy of the ions will be converted into heat energy. This part of the heat is very high, which will cause the wafer temperature to exceed the process temperature. In this case, an electrostatic chuck is required in addition to the heating function. , and must also have a cooling function to keep the wafer below the process temperature during the entire process.

但是，現有的靜電卡盤存在因水冷盤的冷卻速度過高而導致靜電卡盤無法上升至較高的溫度的問題，從而無法滿足對靜電卡盤有高溫要求的製程。However, the existing electrostatic chuck has a problem that the cooling rate of the water-cooling plate is too high, causing the electrostatic chuck to be unable to rise to a higher temperature. Therefore, it cannot meet the process that requires high temperature for the electrostatic chuck.

本發明旨在至少解決現有技術中存在的技術問題之一，提出了一種靜電卡盤和半導體製程設備，其可以解決現有技術中因水冷盤的冷卻速度過高而導致靜電卡盤無法上升至較高的溫度的問題。The present invention aims to solve at least one of the technical problems existing in the prior art. It proposes an electrostatic chuck and a semiconductor processing equipment, which can solve the problem in the prior art that the electrostatic chuck cannot rise to a higher level due to the excessive cooling speed of the water cooling plate. High temperature problem.

為實現本發明的目的而提供一種承載裝置，用於半導體設備中，包括用於承載待加工晶圓的吸附盤，以及設置在該吸附盤底部的冷卻部件和導熱部件，該導熱部件位於該吸附盤與該冷卻部件之間；該冷卻部件用於通過該導熱部件對該吸附盤進行冷卻；該導熱部件用於控制在該冷卻部件與該吸附盤之間的熱傳導速率。In order to achieve the purpose of the present invention, a supporting device is provided for use in semiconductor equipment, comprising an adsorption plate for supporting wafers to be processed, and a cooling component and a heat conducting component arranged at the bottom of the adsorption plate, wherein the heat conducting component is located between the adsorption plate and the cooling component; the cooling component is used to cool the adsorption plate through the heat conducting component; and the heat conducting component is used to control the heat conduction rate between the cooling component and the adsorption plate.

可選的，該導熱部件採用薄壁結構，通過設定該薄壁結構的與傳導熱量相關的參數來控制該熱傳導速率；該參數包括該薄壁結構所包含的薄壁數量，和/或該薄壁結構在該吸附盤軸向上的尺寸，和/或該薄壁結構在該吸附盤徑向上的橫截面面積。Optionally, the heat conductive component adopts a thin-walled structure, and the heat conduction rate is controlled by setting parameters of the thin-walled structure related to heat conduction; the parameters include the number of thin walls contained in the thin-walled structure, and/or the size of the thin-walled structure in the axial direction of the adsorption disk, and/or the cross-sectional area of the thin-walled structure in the radial direction of the adsorption disk.

可選的，該薄壁結構包括呈環狀的傳熱本體和設置於該傳熱本體上的至少一個薄壁環；該薄壁環的一端與該傳熱本體連接，該薄壁環的另一端與該吸附盤連接；該冷卻部件與該傳熱本體連接。Optionally, the thin-wall structure includes a ring-shaped heat transfer body and at least one thin-walled ring arranged on the heat transfer body; one end of the thin-walled ring is connected to the heat transfer body, and the other end of the thin-walled ring is connected to the adsorption plate; the cooling component is connected to the heat transfer body.

可選的，每個該薄壁環與該吸附盤連接的一端設置有環狀凸台；該環狀凸台的徑向寬度大於該薄壁環的徑向寬度。Optionally, an annular boss is provided at one end of each thin-walled ring connected to the adsorption plate; the radial width of the annular boss is greater than the radial width of the thin-walled ring.

可選的，在該傳熱本體的底部設置有安裝部，該安裝部上形成有安裝槽；該冷卻部件包括用於輸送冷卻媒介的冷卻管，該冷卻管設置於該安裝槽中。Optionally, a mounting portion is provided at the bottom of the heat transfer body, and a mounting groove is formed on the mounting portion; the cooling component includes a cooling pipe for conveying a cooling medium, and the cooling pipe is arranged in the mounting groove.

可選的，該冷卻部件包括與該傳熱本體密封連接的環狀蓋板，以及在該環狀蓋板的頂面與該傳熱本體的底面之間形成的冷卻通道，用於輸送冷卻媒介。Optionally, the cooling component includes an annular cover plate sealingly connected to the heat transfer body, and a cooling channel formed between the top surface of the annular cover plate and the bottom surface of the heat transfer body for transporting cooling medium. .

可選的，還包括勻熱件，該勻熱件連接於該吸附盤與該導熱部件之間，該勻熱件用於提高熱傳導的均勻性。Optionally, a heat-distributing member is also included, the heat-distributing member is connected between the adsorption disc and the heat-conducting component, and the heat-distributing member is used to improve the uniformity of heat conduction.

可選的，在該勻熱件與該吸附盤之間設置有熱介面材料層。Optionally, a thermal interface material layer is disposed between the uniformly heated element and the adsorption plate.

可選的，該熱介面材料層的材質包括石墨、石墨烯或者鋁箔。Optionally, the material of the thermal interface material layer includes graphite, graphene or aluminum foil.

可選的，還包括固定部件和頂緊組件，其中，該固定部件連接於該吸附盤的底部，且與該吸附盤的底部合圍成一容納空間；該導熱部件、該冷卻部件和該頂緊組件均位於該容納空間中；該頂緊組件位於該導熱部件與該固定部件之間，用於向該導熱部件施加朝向該吸附盤的壓力。Optionally, a fixing component and a clamping component are also included, wherein the fixing component is connected to the bottom of the adsorption disc and forms an accommodation space with the bottom of the adsorption disc; the thermal conductive component, the cooling component and the clamping component are located in the accommodation space; the clamping component is located between the thermally conductive component and the fixing component, and is used to apply pressure to the thermally conductive component toward the adsorption disc.

可選的，該吸附盤的材質為陶瓷，該固定部件的材質包括鐵鈷鎳合金。Optionally, the adsorption disc is made of ceramic, and the fixed component is made of iron-cobalt-nickel alloy.

可選的，該頂緊組件包括限位環和設置於該限位環上的多個彈性件，且多個該彈性件沿該限位環的周向均勻分佈；該限位環的頂面與該導熱部件的底面相接觸；多個該彈性件設置於該限位環與該固定部件之間，用於通過產生彈性變形而向該限位環施加朝向該吸附盤的壓力。Optionally, the top tightening assembly includes a limiting ring and a plurality of elastic parts arranged on the limiting ring, and the plurality of elastic parts are evenly distributed along the circumference of the limiting ring; the top surface of the limiting ring is in contact with the bottom surface of the heat conductive component; the plurality of elastic parts are arranged between the limiting ring and the fixing component, and are used to apply pressure to the limiting ring toward the adsorption plate by generating elastic deformation.

可選的，該限位環的底面上形成有多個安裝孔，多個該彈性件一一對應地設置於多個該安裝孔中。Optionally, a plurality of mounting holes are formed on the bottom surface of the limiting ring, and a plurality of the elastic members are arranged in the plurality of mounting holes in one-to-one correspondence.

可選的，該導熱部件的材質包括不銹鋼、鉬或者鎳基合金。Optionally, the heat conductive component is made of stainless steel, molybdenum or nickel-based alloy.

可選的，該導熱部件與該勻熱件的連接方式包括焊接、壓接或者鉚接。Optionally, the connection method between the heat conductive component and the heat uniform component includes welding, crimping or riveting.

可選的，該冷卻管與該安裝部的連接方式包括焊接、壓接或者鉚接。Optionally, the cooling tube is connected to the mounting portion by welding, pressing or riveting.

作為另一個技術方案，本發明還提供一種半導體製程設備，包括製程腔室和設置在該製程腔室中的承載裝置，該承載裝置採用本發明提供的上述承載裝置。As another technical solution, the present invention also provides a semiconductor processing equipment, including a process chamber and a bearing device disposed in the process chamber. The bearing device adopts the above bearing device provided by the invention.

本發明具有以下有益效果：The invention has the following beneficial effects:

本發明提供的承載裝置，用於半導體設備中，其可以為靜電卡盤裝置，包括用於承載待加工晶圓的吸附盤，以及設置在吸附盤底部的冷卻部件和導熱部件，其冷卻部件用於通過導熱部件對吸附盤進行冷卻，並通過導熱部件控制在冷卻部件與吸附盤之間的熱傳導速率，可以解決現有技術中因水冷盤的冷卻速度過高而導致靜電卡盤無法上升至較高的溫度的問題，從而可以適用於對靜電卡盤有高溫要求的製程。The carrying device provided by the present invention is used in semiconductor equipment. It can be an electrostatic chuck device, including an adsorption disk for carrying the wafer to be processed, and a cooling component and a thermal conductive component arranged at the bottom of the suction disk. The cooling component is By cooling the adsorption disc through the thermal conductive component, and controlling the heat conduction rate between the cooling component and the adsorption disc through the thermal conductive component, it can solve the problem in the existing technology that the electrostatic chuck cannot rise to a high level due to the excessive cooling speed of the water cooling disc. temperature problem, so it can be applied to processes with high temperature requirements for electrostatic chucks.

本發明提供的半導體製程設備，其通過採用本發明提供的上述承載裝置，可以解決現有技術中因水冷盤的冷卻速度過高而導致靜電卡盤無法上升至較高的溫度的問題，從而可以適用於對靜電卡盤有高溫要求的製程。The semiconductor manufacturing equipment provided by the present invention can solve the problem in the prior art that the electrostatic chuck cannot rise to a higher temperature due to the excessive cooling speed of the water-cooling plate by using the above-mentioned carrying device provided by the present invention, and thus can be applied For processes with high temperature requirements for electrostatic chucks.

為使本領域的技術人員更好地理解本發明的技術方案，下面結合附圖來對本發明提供的靜電卡盤和半導體製程設備進行詳細描述。In order to enable technical personnel in this field to better understand the technical solution of the present invention, the electrostatic chuck and semiconductor process equipment provided by the present invention are described in detail below in conjunction with the accompanying drawings.

請一併參閱圖1和圖2A，本發明實施例提供一種承載裝置，用於半導體設備中，其可以為靜電卡盤裝置，包括吸附盤20和設置在該吸附盤20底部的冷卻組件30。在一些可選的實施例中，吸附盤20的材質可以為絕緣材質，例如包括Al ₂O ₃、AlN、SiC等的陶瓷，由於AlN具有更高的熱導率和更低的熱膨脹係數，其更適合應用於高溫工況中。或者，也可以為半導體材質，例如在陶瓷中摻雜金屬氧化物。 Please refer to FIG. 1 and FIG. 2A together. An embodiment of the present invention provides a carrying device for use in semiconductor equipment. It may be an electrostatic chuck device, including an adsorption disk 20 and a cooling assembly 30 disposed at the bottom of the adsorption disk 20 . In some optional embodiments, the material of the adsorption disc 20 can be an insulating material, such as ceramics including Al ₂ O ₃ , AlN, SiC, etc. Since AlN has higher thermal conductivity and lower thermal expansion coefficient, its More suitable for use in high temperature working conditions. Alternatively, it can also be a semiconductor material, for example, ceramic doped with metal oxide.

為了實現較好的熱傳導，如圖1所示，通常會在晶圓11和吸附盤20之間通入一定壓力的背吹氣體，在此基礎上，為了實現較好的勻氣效果，可以在吸附盤20的上表面設置一定數量的溝槽(圖中未示出)和凸點24，用於提高背吹氣體的勻熱效果。但是，由於晶圓本身的重力並不足以維持背吹壓力，這就需要通過晶圓11和吸附盤20之間的靜電力，將晶圓11牢牢吸附在吸附盤20的表面。具體地，在吸附盤20中設置有直流電極22，該直流電極22與直流電源103電連接，直流電源103用於向直流電極22施加直流電壓，產生能夠將晶圓11吸附在吸附盤20表面上的靜電力。根據吸附原理的不同，可以將靜電卡盤的類型分為庫倫型和J‑R型，其中，對於庫倫型靜電卡盤，其吸附盤20的材質為絕緣材料，電阻比較大，在施加上述直流電壓時，直流電極22和晶圓11上分別形成相反的靜電電荷，從而可以通過庫侖力將晶圓11吸附在吸附盤20的表面。對於J‑R型靜電卡盤，其吸附盤20的材質為半導體材料，內部電阻控制在了1×10 ⁸Ω.cm到1×10 ¹²Ω.cm的範圍內，在施加上述直流電壓時，靜電電荷主要分佈在晶圓11和介電層20的表面上。在較低的直流電壓(例如300V‑500V)下，就能產生較大的靜電力，從而實現將晶圓11吸附在介電層20的表面。可選的，直流電極22的材質包括鉬、鎢、鉑等的具備高熔點的金屬。 In order to achieve better heat conduction, as shown in FIG1 , a back-blowing gas with a certain pressure is usually introduced between the wafer 11 and the adsorption plate 20. On this basis, in order to achieve a better uniform air flow effect, a certain number of grooves (not shown in the figure) and bumps 24 can be provided on the upper surface of the adsorption plate 20 to improve the uniform heating effect of the back-blowing gas. However, since the gravity of the wafer itself is not enough to maintain the back-blowing pressure, it is necessary to use the electrostatic force between the wafer 11 and the adsorption plate 20 to firmly adsorb the wafer 11 on the surface of the adsorption plate 20. Specifically, a DC electrode 22 is provided in the adsorption plate 20, and the DC electrode 22 is electrically connected to a DC power source 103. The DC power source 103 is used to apply a DC voltage to the DC electrode 22 to generate an electrostatic force that can adsorb the wafer 11 on the surface of the adsorption plate 20. According to different adsorption principles, the types of electrostatic chucks can be divided into coulomb type and J-R type. For the coulomb type electrostatic chuck, the material of the adsorption plate 20 is an insulating material with a relatively large resistance. When the above DC voltage is applied, opposite electrostatic charges are formed on the DC electrode 22 and the wafer 11, respectively, so that the wafer 11 can be adsorbed on the surface of the adsorption plate 20 by the coulomb force. For the J-R type electrostatic chuck, the material of the adsorption plate 20 is a semiconductor material, and the internal resistance is controlled within the range of 1×10 ⁸ Ω.cm to 1×10 ¹² Ω.cm. When the above DC voltage is applied, the electrostatic charge is mainly distributed on the surface of the wafer 11 and the dielectric layer 20. Under a relatively low DC voltage (e.g., 300V-500V), a relatively large electrostatic force can be generated, thereby achieving adsorption of the wafer 11 on the surface of the dielectric layer 20. Optionally, the material of the DC electrode 22 includes metals with high melting points such as molybdenum, tungsten, and platinum.

此外，為了使靜電卡盤具備加熱功能，在吸附盤20中設置有加熱元件23，該加熱元件23例如為加熱絲，該加熱元件23與交流電源109電連接。為了實現較好的溫度均勻性，加熱元件23通常均勻分佈在吸附盤20中。In addition, in order to make the electrostatic chuck have a heating function, a heating element 23 is provided in the adsorption plate 20. The heating element 23 is, for example, a heating wire, and the heating element 23 is electrically connected to the AC power source 109. In order to achieve better temperature uniformity, the heating elements 23 are usually evenly distributed in the adsorption plate 20.

內部設置有直流電極22和加熱元件23的吸附盤20的製作方式例如可以通過絲網印的方式將對應的圖形印製在多個陶瓷流延片上，並通過靜壓製程將這些陶瓷流延片製成內嵌上述直流電極22和加熱元件23的陶瓷生坯，並進行燒結，製成吸附盤20。或者，也可以通過將預先製作好的直流電極22和加熱元件23放入到配置好的陶瓷粉料中，然後進行熱壓燒結製成吸附盤20。在完成燒結後，如圖2所示，在吸附盤20的上表面加工形成勻氣槽(圖中未示出)、凸點等結構，在吸附盤20中加工形成用於供頂針穿過的多個通孔21，以及在吸附盤20的底部設置上述直流電極22和加熱元件23的四個端子以及相應的引出線纜。The adsorption disc 20 with the DC electrode 22 and the heating element 23 inside can be produced by, for example, printing corresponding patterns on multiple ceramic cast sheets through screen printing, and pressing these ceramic cast sheets through a static pressing process. A ceramic green body embedded with the DC electrode 22 and the heating element 23 is made and sintered to form the adsorption disk 20 . Alternatively, the adsorption disc 20 can also be made by placing the pre-made DC electrode 22 and the heating element 23 into the prepared ceramic powder, and then performing hot-pressing sintering. After sintering is completed, as shown in FIG. 2 , air distribution grooves (not shown in the figure), bumps and other structures are formed on the upper surface of the adsorption disc 20 , and holes for the ejectors to pass through are formed in the adsorption disc 20 . A plurality of through holes 21, as well as four terminals of the above-mentioned DC electrode 22 and heating element 23 and corresponding lead-out cables are provided at the bottom of the suction disk 20.

在一些特殊的製程中，靜電卡盤既要加熱晶圓，又要冷卻晶圓，以PVD的Al沉積製程為例，需要先通過溫度控制單元控制加熱元件23的加熱功率，以將吸附盤20加熱至所需的製程溫度，然後通過機械手將晶圓傳入到製程腔室中，並放置於吸附盤20上；之後開始進行磁控濺射製程，在此過程中，會有等離子體中的離子轟擊晶圓表面，離子的動能會被轉換為熱能，這部分熱量是非常高的，會導致晶圓溫度超過製程溫度，在這種情況下，就需要靜電卡盤除了具備加熱功能外，同時還必須具備冷卻功能，以保持晶圓在整個製程過程期間都能維持在製程溫度之下。In some special processes, the electrostatic chuck needs to both heat and cool the wafer. Taking the Al deposition process of PVD as an example, it is necessary to first control the heating power of the heating element 23 through the temperature control unit to move the adsorption disc 20 Heating to the required process temperature, the wafer is then introduced into the process chamber through a robot and placed on the adsorption disc 20; then the magnetron sputtering process is started. During this process, there will be a plasma in the process chamber. When ions bombard the wafer surface, the kinetic energy of the ions will be converted into heat energy. This part of the heat is very high and will cause the wafer temperature to exceed the process temperature. In this case, in addition to the heating function, the electrostatic chuck is required. It must also have cooling capabilities to keep the wafer below the process temperature throughout the entire process.

對此，本發明實施例提供一種承載裝置，用於半導體設備中，其可以為靜電卡盤裝置。具體地，如圖2A所示，該承載裝置包括用於承載待加工晶圓的吸附盤20，以及設置在吸附盤20底部的冷卻部件33和導熱部件32，導熱部件32位於吸附盤20與冷卻部件33之間；其中，冷卻部件33用於通過導熱部件32對吸附盤20進行冷卻；導熱部件32用於控制在冷卻部件33與勻熱件31之間的熱傳導速率。In this regard, embodiments of the present invention provide a carrying device for use in semiconductor equipment, which may be an electrostatic chuck device. Specifically, as shown in FIG. 2A , the carrying device includes an adsorption disk 20 for carrying the wafer to be processed, as well as a cooling component 33 and a thermal conductive component 32 provided at the bottom of the suction disk 20 . The thermal conductive component 32 is located between the suction disk 20 and the cooling component. between the components 33; wherein, the cooling component 33 is used to cool the adsorption disc 20 through the thermally conductive component 32; the thermally conductive component 32 is used to control the heat conduction rate between the cooling component 33 and the heat-distributing component 31.

通過將冷卻部件33與導熱部件32結合使用，可以在對吸附盤20進行冷卻的基礎上，控制在冷卻部件33與吸附盤20之間的熱傳導速率，以解決現有技術中因水冷盤的冷卻速度過高而導致靜電卡盤無法上升至較高的溫度的問題，從而可以適用於對靜電卡盤有高溫要求的製程。By combining the cooling component 33 with the heat conducting component 32, the heat conduction rate between the cooling component 33 and the adsorption plate 20 can be controlled on the basis of cooling the adsorption plate 20, so as to solve the problem in the prior art that the electrostatic chuck cannot rise to a higher temperature due to the excessively high cooling speed of the water cooling plate. Thus, the electrostatic chuck can be applied to processes that have high temperature requirements for the electrostatic chuck.

導熱部件32用於控制在冷卻部件33與吸附盤20之間的熱傳導速率，從而實現控制整個冷卻組件30的傳熱能力。根據下述熱傳導公式可知： The thermal conductive component 32 is used to control the heat conduction rate between the cooling component 33 and the adsorption disc 20 , thereby controlling the heat transfer capability of the entire cooling assembly 30 . According to the following heat conduction formula, we can know:

其中，Q表示在冷卻部件33與吸附盤20之間傳導的熱量；K表示導熱部件32的熱傳導係數；A表示傳熱面積(即，導熱部件32與吸附盤20的接觸面積)；ΔT表示冷端與熱端之間的溫度差，冷端即為冷卻部件33；熱端即為吸附盤20。ΔL表示冷端與熱端之間的距離，即，導熱部件32在冷卻部件33與吸附盤20之間的長度。Wherein, Q represents the heat transferred between the cooling member 33 and the adsorption plate 20; K represents the thermal conductivity coefficient of the heat conductive member 32; A represents the heat transfer area (i.e., the contact area between the heat conductive member 32 and the adsorption plate 20); ΔT represents the temperature difference between the cold end and the hot end, the cold end is the cooling member 33; the hot end is the adsorption plate 20. ΔL represents the distance between the cold end and the hot end, i.e., the length of the heat conductive member 32 between the cooling member 33 and the adsorption plate 20.

基於上述熱傳導公式可知，在導熱部件32的材質一定的前提下，通過改變上述傳熱面積A和/或導熱部件32在冷卻部件33與吸附盤20之間的長度ΔL，可以實現熱量Q的控制，從而實現對熱傳導速率的控制。在一些可選的實施例中，導熱部件32採用薄壁結構，通過設定該薄壁結構的與熱量Q相關的參數，來控制熱傳導速率。該參數包括上述薄壁結構所包含的薄壁數量，和/或上述薄壁結構在吸附盤20軸向上的尺寸(即，上述長度ΔL)，和/或上述薄壁結構在吸附盤20徑向上的橫截面面積(即，上述傳熱面積A)。具體地，如果需要增強冷卻效果，則可以增加薄壁數量，和/或減小上述薄壁結構在吸附盤20軸向上的尺寸，和/或增大上述薄壁結構在吸附盤20徑向上的橫截面面積；反之，如果需要減弱冷卻效果，則可以減少薄壁數量，和/或增大上述薄壁結構在吸附盤20軸向上的尺寸，和/或減小上述薄壁結構在吸附盤20徑向上的橫截面面積。Based on the above heat conduction formula, it can be seen that under the premise that the material of the heat conduction component 32 is constant, the control of the heat Q can be achieved by changing the heat transfer area A and/or the length ΔL of the heat conduction component 32 between the cooling component 33 and the adsorption plate 20 , thereby achieving control of the heat conduction rate. In some optional embodiments, the thermally conductive component 32 adopts a thin-walled structure, and the heat conduction rate is controlled by setting parameters related to the heat Q of the thin-walled structure. This parameter includes the number of thin walls contained in the above-mentioned thin-walled structure, and/or the size of the above-mentioned thin-walled structure in the axial direction of the adsorption disc 20 (ie, the above-mentioned length ΔL), and/or the size of the above-mentioned thin-walled structure in the radial direction of the adsorption disc 20 cross-sectional area (ie, the above-mentioned heat transfer area A). Specifically, if it is necessary to enhance the cooling effect, the number of thin walls can be increased, and/or the size of the above-mentioned thin-wall structure in the axial direction of the adsorption disc 20 can be reduced, and/or the size of the above-mentioned thin-wall structure in the radial direction of the adsorption disc 20 can be increased. On the contrary, if the cooling effect needs to be weakened, the number of thin walls can be reduced, and/or the size of the above-mentioned thin-walled structure in the axial direction of the adsorption disc 20 can be increased, and/or the above-mentioned thin-walled structure can be reduced in the axial direction of the adsorption disc 20 Radial cross-sectional area.

現有的靜電卡盤還存在因水冷盤與靜電卡盤之間的溫差過大而導致靜電卡盤受熱不均的問題，這不僅會造成吸附盤在高溫狀態下碎裂，而且還會影響製程均勻性。為了解決該問題，在另一些可選的實施例中，如圖2B所示，承載裝置還包括勻熱件31，該勻熱件31連接於吸附盤20與導熱部件32之間，勻熱件31用於提高傳導熱量的均勻性。通過在吸附盤20與導熱部件32之間設置勻熱件31，可以提高傳導熱量的均勻性，從而可以解決現有技術中因水冷盤與靜電卡盤之間的溫差過大而導致靜電卡盤受熱不均的問題，提高製程均勻性。需要說明的是，在設置上述勻熱件31的情況下，上述熱傳導公式中的冷端與熱端之間的溫度差ΔT中的熱端即為勻熱件31，其溫度接近吸附盤20的溫度。在實際應用中，可以根據具體需要選擇是否設置上述勻熱件31。下面均以設置有勻熱件31為例，對本發明實施例提供的靜電卡盤進行詳細描述。The existing electrostatic chuck also has the problem of uneven heating of the electrostatic chuck due to the large temperature difference between the water cooling plate and the electrostatic chuck, which not only causes the adsorption plate to break under high temperature, but also affects the uniformity of the process. To solve this problem, in some other optional embodiments, as shown in FIG. 2B , the carrier device further includes a uniform heating member 31, which is connected between the adsorption plate 20 and the heat conducting component 32, and the uniform heating member 31 is used to improve the uniformity of heat conduction. By providing a uniform heating element 31 between the adsorption plate 20 and the heat conducting component 32, the uniformity of heat conduction can be improved, thereby solving the problem of uneven heating of the electrostatic chuck due to the large temperature difference between the water cooling plate and the electrostatic chuck in the prior art, and improving the uniformity of the process. It should be noted that when the above-mentioned uniform heating element 31 is provided, the hot end in the temperature difference ΔT between the cold end and the hot end in the above-mentioned heat conduction formula is the uniform heating element 31, and its temperature is close to the temperature of the adsorption plate 20. In actual application, it can be selected whether to provide the above-mentioned uniform heating element 31 according to specific needs. The following is a detailed description of the electrostatic chuck provided in the embodiment of the present invention, taking the provision of the uniform heating element 31 as an example.

上述薄壁結構可以有多種，例如，如圖3所示，上述薄壁結構包括呈環狀的傳熱本體321和一個或多個薄壁環322，例如，圖3中示出了三個薄壁環322，在薄壁環322為多個時，多個薄壁環322相互嵌套，且間隔設置；每個薄壁環322的一端與傳熱本體321連接，每個薄壁環322的另一端與勻熱件31連接；冷卻部件33與傳熱本體321連接。上述薄壁環322的徑向厚度小於軸向長度，以構成薄壁結構。The above-mentioned thin-walled structure may have multiple types. For example, as shown in Figure 3, the above-mentioned thin-walled structure includes an annular heat transfer body 321 and one or more thin-walled rings 322. For example, three thin-walled rings 322 are shown in Figure 3. When there are multiple thin-walled rings 322 , the multiple thin-walled rings 322 are nested in each other and arranged at intervals; one end of each thin-walled ring 322 is connected to the heat transfer body 321 , and the other end of each thin-walled ring 322 is connected to the heat-distributing element 31 ; cooling component 33 Connected to the heat transfer body 321. The radial thickness of the thin-walled ring 322 is smaller than the axial length to form a thin-walled structure.

如果需要增強冷卻效果，則可以增加薄壁環322的數量(例如3個或4個)，和/或減小薄壁環322在吸附盤20軸向上的尺寸，和/或增大薄壁環322在吸附盤20徑向上的橫截面面積；反之，如果需要減弱冷卻效果，則可以減少薄壁環322的數量(例如1個或2個)，和/或增大薄壁環322在吸附盤20軸向上的尺寸，和/或減小薄壁環322在吸附盤20徑向上的橫截面面積。If the cooling effect needs to be enhanced, the number of thin-walled rings 322 can be increased (for example, 3 or 4), and/or the size of the thin-walled ring 322 in the axial direction of the adsorption disc 20 can be reduced, and/or the diameter of the thin-walled ring 322 in the axial direction of the adsorption disc 20 can be increased. On the contrary, if the cooling effect needs to be weakened, the number of thin-walled rings 322 can be reduced (for example, 1 or 2), and/or the size of the thin-walled rings 322 in the axial direction of the adsorption plate 20 can be increased, and/or the size of the thin-walled rings 322 can be reduced. The cross-sectional area of the small thin-walled ring 322 in the radial direction of the suction disc 20 is small.

在一些可選的實施例中，每個薄壁環322與勻熱件31連接的一端設置有環狀凸台323，該環狀凸台323與勻熱件31連接；環狀凸台323的徑向寬度大於薄壁環322的徑向寬度。借助環狀凸台323，既可以增大薄壁環322與勻熱件31的接觸面積，又可以提高薄壁環322的強度，從而可以提高對勻熱件31的支撐穩定性。可選的，環狀凸台323可以相對於薄壁環322的內周面凸出，也可以相對於薄壁環322的外周面凸出，還可以相對於薄壁環322的內周面和外周面均凸出。在薄壁環322為多個時，不同的薄壁環322上的環狀凸台323的凸出方向可以相同，也可以不同。In some optional embodiments, an annular boss 323 is provided at one end of each thin-walled ring 322 connected to the uniform heating element 31, and the annular boss 323 is connected to the uniform heating element 31; the radial width of the annular boss 323 is greater than the radial width of the thin-walled ring 322. With the help of the annular boss 323, the contact area between the thin-walled ring 322 and the uniform heating element 31 can be increased, and the strength of the thin-walled ring 322 can be improved, thereby improving the support stability of the uniform heating element 31. Optionally, the annular boss 323 may protrude relative to the inner circumference of the thin-walled ring 322, or relative to the outer circumference of the thin-walled ring 322, or relative to both the inner circumference and the outer circumference of the thin-walled ring 322. When there are multiple thin-walled rings 322, the protruding directions of the annular bosses 323 on different thin-walled rings 322 may be the same or different.

可選的，導熱部件(即，薄壁環322)的材質包括不銹鋼、鉬或者鎳基合金等的熱導率較低，耐溫性能較好的金屬材料。進一步可選的，為了防止導熱部件32在高溫條件下發生氧化，可以在導熱部件32的表面設置保護層，例如在導熱部件32的表面鍍鎳。該保護層的厚度範圍例如為10μm‑30μm。Optionally, the material of the heat-conducting component (i.e., the thin-walled ring 322) includes a metal material with low thermal conductivity and good temperature resistance, such as stainless steel, molybdenum or nickel-based alloy. Further optionally, in order to prevent the heat-conducting component 32 from oxidizing under high temperature conditions, a protective layer can be provided on the surface of the heat-conducting component 32, for example, nickel is plated on the surface of the heat-conducting component 32. The thickness of the protective layer ranges from 10 μm to 30 μm, for example.

在一些可選的實施例中，在傳熱本體321的底部設置有安裝部324，該安裝部324上形成有安裝槽324a；並且，冷卻部件33包括用於輸送冷卻媒介的冷卻管，該冷卻管設置於安裝槽324a，並保證與安裝槽324a的表面接觸良好。這樣，冷卻管中的冷卻媒介可以通過上述導熱部件32和勻熱件31對吸附盤20進行冷卻。為了實現冷卻均勻性，可選的，冷卻管可以沿傳熱本體321的周向呈環狀纏繞。可選的，冷卻管的兩端分別與兩個外接管路34(圖中僅示出了一個)連接，兩個外接管路34用於向冷卻管中通入冷卻媒介，並回收冷卻管中的冷卻媒介，從而實現冷卻媒介的迴圈流動。可選的，冷卻媒介可以是冷卻水、冷卻液或者冷卻氣體等等，冷卻媒介的溫度範圍例如為20℃‑30℃。可選的，上述冷卻管與安裝部324的連接方式包括焊接、壓接或者鉚接等等。In some optional embodiments, a mounting portion 324 is provided at the bottom of the heat transfer body 321, and a mounting groove 324a is formed on the mounting portion 324; and the cooling component 33 includes a cooling pipe for conveying a cooling medium, and the cooling pipe is provided in the mounting groove 324a, and ensures good contact with the surface of the mounting groove 324a. In this way, the cooling medium in the cooling pipe can cool the adsorption disk 20 through the above-mentioned heat conduction component 32 and the uniform heating element 31. In order to achieve cooling uniformity, the cooling pipe can be optionally wound in a ring shape along the circumference of the heat transfer body 321. Optionally, the two ends of the cooling tube are respectively connected to two external pipes 34 (only one is shown in the figure), and the two external pipes 34 are used to pass the cooling medium into the cooling tube and recover the cooling medium in the cooling tube, thereby realizing the circulation flow of the cooling medium. Optionally, the cooling medium can be cooling water, cooling liquid or cooling gas, etc., and the temperature range of the cooling medium is, for example, 20°C-30°C. Optionally, the connection method between the above cooling tube and the mounting portion 324 includes welding, pressing or riveting, etc.

在另一些可選的實施例中，如圖4所示，冷卻部件33還可以包括與傳熱本體321密封連接的環狀蓋板331，以及在該環狀蓋板331的頂面與傳熱本體321的底面之間形成的冷卻通道332，用於輸送冷卻媒介。例如，可以在傳熱本體321的底面上形成冷卻凹道，該冷卻凹道與環狀蓋板331的頂面構成上述冷卻通道332。可選的，冷卻通道332可以沿傳熱本體321的周向呈環狀延伸。可選的，冷卻通道332的兩端分別與兩個外接管路34(圖中僅示出了一個)連接，兩個外接管路34用於向冷卻通道332中通入冷卻媒介，並回收冷卻通道332中的冷卻媒介，從而實現冷卻媒介的迴圈流動。可選的，上述環狀蓋板331與傳熱本體321的連接方式例如為諸如釺焊、電子束、鐳射等的焊接方式。In other optional embodiments, as shown in FIG. 4 , the cooling component 33 may also include an annular cover plate 331 sealedly connected to the heat transfer body 321 , and the top surface of the annular cover plate 331 is connected to the heat transfer body 331 . The cooling channel 332 formed between the bottom surfaces of the body 321 is used to transport cooling medium. For example, a cooling groove may be formed on the bottom surface of the heat transfer body 321 , and the cooling groove and the top surface of the annular cover plate 331 form the above-mentioned cooling channel 332 . Optionally, the cooling channel 332 may extend annularly along the circumferential direction of the heat transfer body 321 . Optionally, both ends of the cooling channel 332 are respectively connected to two external pipes 34 (only one is shown in the figure). The two external pipes 34 are used to pass the cooling medium into the cooling channel 332 and recover the cooling. The cooling medium in the channel 332 realizes the circulation flow of the cooling medium. Optionally, the connection method between the annular cover plate 331 and the heat transfer body 321 is, for example, a welding method such as welding, electron beam, laser, etc.

在一些可選的實施例中，勻熱件31例如為環狀平板。可選的，導熱部件32與勻熱件31的連接方式包括焊接、壓接或者鉚接等等。勻熱件31的作用是防止在導熱部件32和吸附盤20之間的水準介面位置產生較大的溫差，從而可以防止吸附盤20碎裂，同時可以提高吸附盤20的溫度均勻性。勻熱件31的材質例如採用熱導性能較好的金屬、陶瓷、或者複合材料，金屬例如採用Al、Cu等；陶瓷例如採用AlN、SiC等；複合材料例如採用鋁基碳化矽等。如果勻熱件31採用金屬，為了實現勻熱件31和導熱部件32能夠可靠接觸，二者可以採用諸如釺焊、電子束等焊接方式連接。可選的，為了防止勻熱件31高溫氧化，可以在勻熱件31上設置保護層，例如可以在勻熱件31上鍍鎳，保護層的厚度範圍例如為10μm‑30μm。如果勻熱件31為陶瓷或複合材料，可以通過釺焊等的方式將勻熱件31和導熱部件32固定在一起。In some optional embodiments, the heating element 31 is, for example, an annular flat plate. Optionally, the connection method between the heat conductive component 32 and the heat uniform component 31 includes welding, crimping or riveting, etc. The function of the heat-distributing member 31 is to prevent a large temperature difference from occurring at the horizontal interface between the heat-conducting component 32 and the adsorption disc 20 , thereby preventing the adsorption disc 20 from being broken and improving the temperature uniformity of the adsorption disc 20 . The material of the heat distribution member 31 is, for example, metal, ceramic, or composite material with good thermal conductivity. For example, the metal is Al, Cu, etc.; the ceramic is, for example, AlN, SiC, etc.; and the composite material is, for example, aluminum-based silicon carbide. If the heat distribution member 31 is made of metal, in order to achieve reliable contact between the heat distribution member 31 and the heat conductive component 32, the two may be connected by welding methods such as welding or electron beam. Optionally, in order to prevent the uniform heat component 31 from being oxidized at high temperature, a protective layer can be provided on the uniform heat component 31 . For example, the uniform heat component 31 can be plated with nickel. The thickness of the protective layer ranges from 10 μm to 30 μm, for example. If the heat distribution member 31 is made of ceramic or composite material, the heat distribution member 31 and the heat conductive component 32 can be fixed together by welding or the like.

可選的，圖4中示出的薄壁環322為兩個。在這種情況下，在勻熱件31的底面還設置有定位凸部311，其設置於兩個薄壁環322之間，用於限定勻熱件31的位置。Optionally, there are two thin-walled rings 322 shown in Fig. 4. In this case, a positioning protrusion 311 is also provided on the bottom surface of the uniformly heated member 31, which is arranged between the two thin-walled rings 322 to limit the position of the uniformly heated member 31.

在一些可選的實施例中，在勻熱件31與吸附盤20之間設置有熱介面材料層(圖中未示出)。由於勻熱件31和吸附盤20採用的是不同種材料，故兩者擁有不同的熱膨脹係數，不能通過焊接等方式直接固定，在這種情況下，通過在勻熱件31與吸附盤20之間設置有熱介面材料層，其在壓力條件下具備一定的形變能力，以填充勻熱件31與吸附盤20之間的空隙，從而可以使二者始終接觸良好，保證勻熱件31與吸附盤20之間的熱傳導。可選的，上述熱介面材料層採用耐高溫、導熱性能良好且能夠在壓力條件下具備一定的形變能力的材料製作，例如石墨、石墨烯或者鋁箔。In some optional embodiments, a thermal interface material layer (not shown in the figure) is provided between the heat distribution member 31 and the adsorption disc 20 . Since the heat distribution member 31 and the adsorption disc 20 are made of different materials, they have different thermal expansion coefficients and cannot be directly fixed by welding or other methods. In this case, the heat distribution member 31 and the adsorption disc 20 are installed between the heat distribution member 31 and the adsorption disc 20 There is a thermal interface material layer between them, which has a certain deformation ability under pressure conditions to fill the gap between the uniform heat component 31 and the adsorption disc 20, so that the two can always be in good contact, ensuring that the uniform heat component 31 and the adsorption disc 20 are in good contact with each other. heat conduction between the disks 20. Optionally, the thermal interface material layer is made of a material that is high temperature resistant, has good thermal conductivity and has a certain deformation ability under pressure conditions, such as graphite, graphene or aluminum foil.

在一些可選的實施例中，如圖2和圖5所示，為了保證導熱部件32和勻熱件31與吸附盤20之間始終保持良好接觸，以能夠使熱介面材料層充分填充勻熱件31與吸附盤20之間的空隙，靜電卡盤還包括固定部件40和頂緊組件41，其中，固定部件40連接於吸附盤20的底部，且與吸附盤20的底部合圍成一容納空間42；勻熱件31、導熱部件32、冷卻部件33和頂緊組件41均位於容納空間42中；頂緊組件41位於導熱部件32的底面與固定部件40的與容納空間42相對的頂面之間，用於向導熱部件32施加朝向吸附盤20的壓力，即，將導熱部件32和勻熱件31頂緊在吸附盤20的底部，從而可以保證導熱部件32和勻熱件31與吸附盤20之間始終保持良好接觸，以確保實現冷卻組件30與吸附盤20之間的充分導熱。In some optional embodiments, as shown in FIGS. 2 and 5 , in order to ensure that the thermal conductive component 32 and the uniform heat component 31 are always in good contact with the adsorption disc 20 , the thermal interface material layer can be fully filled with uniform heat. The electrostatic chuck also includes a fixing component 40 and a clamping assembly 41. The fixing component 40 is connected to the bottom of the suction disc 20 and forms a receiving space 42 with the bottom of the suction disc 20. ; The heat-distributing component 31, the heat-conducting component 32, the cooling component 33 and the clamping component 41 are all located in the accommodating space 42; the clamping component 41 is located between the bottom surface of the heat-conducting component 32 and the top surface of the fixing component 40 opposite to the accommodating space 42 , used to exert pressure toward the adsorption disc 20 by the heat conduction component 32 , that is, pressing the heat conduction component 32 and the heat uniformity member 31 against the bottom of the adsorption disc 20 , thereby ensuring that the heat conduction component 32 and the heat uniformity member 31 are in contact with the adsorption disc 20 Good contact is always maintained to ensure sufficient heat conduction between the cooling assembly 30 and the adsorption plate 20 .

頂緊組件41的結構可以有多種，在一些可選的實施例中，如圖5所示，頂緊組件41包括限位環41a和設置於限位環41a上的多個彈性件41b，且多個彈性件41b沿限位環41a的周向均勻分佈，這樣，可以在圓周方向上均勻地向導熱部件32施加壓力，從而可以使導熱部件32及其上方的各個部件均勻受力。限位環41a的頂面與導熱部件32的底面相接觸，多個彈性件41b設置於限位環41a與固定部件40之間，用於通過產生彈性變形而向限位環41a施加朝向吸附盤20的壓力，借助多個彈性件41b，可以保證始終將導熱部件32和勻熱件31頂緊在吸附盤20的底部。可選的，彈性件41b為彈簧，其在限位環41a與固定部件40之間處於壓縮狀態。限位環41a的材質可以採用諸如不銹鋼、鈦等的能夠耐受高溫的金屬。可選的，為了防止彈性件41b在長期高溫的情況下發生彈性失效，彈性件41b的材質可以採用耐高溫的合金，例如，鎳基合金等。The structure of the top tightening assembly 41 can be various. In some optional embodiments, as shown in FIG5 , the top tightening assembly 41 includes a limiting ring 41a and a plurality of elastic members 41b disposed on the limiting ring 41a, and the plurality of elastic members 41b are evenly distributed along the circumference of the limiting ring 41a. In this way, pressure can be evenly applied to the heat-conducting component 32 in the circumferential direction, so that the heat-conducting component 32 and the components above it can be evenly stressed. The top surface of the limiting ring 41a contacts the bottom surface of the heat conducting component 32, and a plurality of elastic members 41b are disposed between the limiting ring 41a and the fixing component 40, and are used to apply pressure toward the adsorption plate 20 to the limiting ring 41a by generating elastic deformation. With the help of the plurality of elastic members 41b, it can be ensured that the heat conducting component 32 and the uniform heating member 31 are always pressed against the bottom of the adsorption plate 20. Optionally, the elastic member 41b is a spring, which is in a compressed state between the limiting ring 41a and the fixing component 40. The limiting ring 41a can be made of a metal that can withstand high temperatures, such as stainless steel, titanium, etc. Optionally, in order to prevent the elastic member 41b from elastic failure under long-term high temperature conditions, the material of the elastic member 41b can be a high-temperature resistant alloy, such as a nickel-based alloy.

在一些可選的實施例中，為了實現對彈性件41b的限位，如圖5所示，限位環41a的底面上形成有多個安裝孔41c，多個彈性件41b一一對應地設置于多個安裝孔41c的底面與固定部件40的與容納空間42相對的頂面之間。In some optional embodiments, in order to limit the elastic member 41b, as shown in FIG. 5, a plurality of mounting holes 41c are formed on the bottom surface of the limiting ring 41a, and a plurality of elastic members 41b are arranged one by one correspondingly between the bottom surfaces of the plurality of mounting holes 41c and the top surface of the fixing component 40 opposite to the accommodating space 42.

在一些可選的實施例中，由於需要靜電卡盤位於製程腔室在豎直方向上的不同位置，如傳片位、製程位等，這就要求靜電卡盤是可升降的，且在升降過程中不能破壞製程腔室的真空，為此，如圖2所示，在靜電卡盤底部設置有波紋管50，其內部嵌套有升降軸51，該升降軸51的上端與靜電卡盤連接，下端穿過製程腔室的底壁，並延伸至製程腔室的外部，以能夠與外部的升降驅動源連接，升降軸51是中空的，上述直流電極22和加熱元件23的引出線纜以及上述外接管路34均可以穿過升降軸51，並延伸至製程腔室的外部。In some optional embodiments, since the electrostatic chuck needs to be located at different positions in the vertical direction of the process chamber, such as the film transfer position, the process position, etc., this requires that the electrostatic chuck can be lifted and lowered. The vacuum of the process chamber cannot be destroyed during the process. For this reason, as shown in Figure 2, a bellows 50 is provided at the bottom of the electrostatic chuck, with a lifting shaft 51 nested inside. The upper end of the lifting shaft 51 is connected to the electrostatic chuck. , the lower end passes through the bottom wall of the process chamber and extends to the outside of the process chamber to be able to connect with the external lifting drive source. The lifting shaft 51 is hollow. The lead cables of the above-mentioned DC electrode 22 and heating element 23 and The above-mentioned external pipes 34 can pass through the lifting shaft 51 and extend to the outside of the process chamber.

波紋管50是可伸縮的，其上端與靜電卡盤密封連接，下端與製程腔室的底壁通過法蘭52和密封圈53密封連接，從而可以使波紋管50內側與製程腔室外部連通的大氣空間與製程腔室內位於波紋管50外側的真空空間相隔離，從而保證製程腔室能夠保持真空狀態。波紋管50與靜電卡盤密封連接的方式有多種。The bellows 50 is retractable, and its upper end is sealedly connected to the electrostatic chuck, and its lower end is sealedly connected to the bottom wall of the process chamber through a flange 52 and a sealing ring 53, so that the atmospheric space inside the bellows 50 that is connected to the outside of the process chamber can be separated from the vacuum space outside the bellows 50 in the process chamber, thereby ensuring that the process chamber can maintain a vacuum state. There are many ways to seal the bellows 50 with the electrostatic chuck.

在一些可選的實施例中，波紋管50可以與上述固定部件40密封連接，例如採用諸如電子束焊、鐳射焊等的焊接方式密封連接。波紋管50的材質通常為金屬，而吸附盤20的材質為陶瓷，二者的熱膨脹係數相差較大，例如吸附盤20為AlN陶瓷時，其熱膨脹係數通常在4.7×10 ^‑6/℃左右，而波紋管50為不銹鋼時，其熱膨脹係數在15×10 ^‑6/℃左右，在這種情況下，如果將不銹鋼直接釺焊在AlN陶瓷上，由於兩者熱膨脹係數差距較大，在焊接完成，並冷卻到低溫時產生的應力會導致吸附盤20發生碎裂。為了避免該問題的發生，可選的，固定部件40的材質可以採用鐵鈷鎳合金(也稱為KOVAR)，其熱膨脹係數和陶瓷更為接近，其與吸附盤20密封連接(例如釺焊)不會發生上述吸附盤20發生碎裂的問題，並通過將波紋管50與上述固定部件40密封連接，來實現波紋管50與靜電卡盤的連接。 In some optional embodiments, the bellows 50 can be sealedly connected to the above-mentioned fixing component 40 , for example, by using a welding method such as electron beam welding, laser welding, or the like. The material of the bellows 50 is usually metal, while the material of the adsorption plate 20 is ceramic. The thermal expansion coefficients of the two are quite different. For example, when the adsorption plate 20 is made of AlN ceramic, its thermal expansion coefficient is usually around 4.7× ^10-6 /℃. When the bellows 50 is made of stainless steel, its thermal expansion coefficient is about 15× ^10-6 /℃. In this case, if the stainless steel is directly welded to the AlN ceramic, due to the large difference in thermal expansion coefficient between the two, the , and the stress generated when cooling to a low temperature will cause the adsorption disc 20 to break. In order to avoid this problem, optionally, the material of the fixed component 40 can be iron-cobalt-nickel alloy (also known as KOVAR), whose thermal expansion coefficient is closer to that of ceramics, and it is sealedly connected to the adsorption plate 20 (for example, welded) The problem of the adsorption disk 20 breaking does not occur, and the connection between the bellows 50 and the electrostatic chuck is achieved by sealing the bellows 50 with the fixing component 40 .

在一些可選的實施例中，為了避讓頂針，使其能夠穿過通孔21，上述固定部件40與吸附盤20連接的位置位於通孔21的內側，即，連接位置所在圓周的直徑小於通孔21所在圓周的直徑。In some optional embodiments, in order to avoid the ejection pin and allow it to pass through the through hole 21, the position where the above-mentioned fixing component 40 is connected to the suction plate 20 is located inside the through hole 21, that is, the diameter of the circumference of the connection position is smaller than the diameter of the through hole 21. The diameter of the circle where hole 21 is located.

綜上所述，本發明實施例提供的承載裝置，其冷卻部件用於依次通過導熱部件和勻熱件對吸附盤進行冷卻，並結合使用導熱部件控制在冷卻部件與勻熱件之間傳導的熱量大小，可以解決現有技術中因水冷盤的冷卻速度過高而導致靜電卡盤無法上升至較高的溫度的問題，從而可以適用於對靜電卡盤有高溫要求的製程。In summary, the carrier device provided by the embodiment of the present invention has a cooling component which is used to cool the adsorption plate in sequence through the heat-conducting component and the uniform heating component, and the heat-conducting component is used in combination to control the amount of heat transferred between the cooling component and the uniform heating component, thereby solving the problem in the prior art that the electrostatic chuck cannot rise to a higher temperature due to the excessively high cooling speed of the water-cooled plate, and thus can be applied to processes that have high temperature requirements for the electrostatic chuck.

作為另一個技術方案，本發明實施例還提供一種半導體製程設備，以圖6所示的PVD設備為例，其包括製程腔室100和設置在製程腔室100中的承載裝置101，該承載裝置101採用本發明上述實施例提供的承載裝置。As another technical solution, an embodiment of the present invention further provides a semiconductor process equipment, taking the PVD equipment shown in Figure 6 as an example, which includes a process chamber 100 and a carrier device 101 arranged in the process chamber 100, and the carrier device 101 adopts the carrier device provided by the above embodiment of the present invention.

具體地，上述PVD設備還包括設置於製程腔室100頂部的靶材104、設置於靶材104上方的磁控管106、進氣裝置108和抽真空裝置107，其中，靶材104與直流電源105電連接；進氣裝置108包括進氣管路和設置於該進氣管路上的流量控制閥和通斷閥。在進行PVD製程前，需要通過抽真空裝置107將製程腔室100抽氣達到高真空狀態。然後，通過進氣裝置108向製程腔室100內通入一定壓力的製程氣體，製程氣體可以是氬氣等的惰性氣體，其流量是由安裝在腔室上的品質流量計來控制的，其開關是通過流量控制閥來實現。另外，靜電卡盤中的直流電極和加熱元件的引出線纜以及冷卻部件的外接管路均可以穿過升降軸延伸至製程腔室的外部，其中，加熱元件的引出線纜與外部的交流電源109電連接；直流電極的引出線纜與外部的直流電源103電連接；冷卻部件的外接管路與熱交換器102連接。Specifically, the above-mentioned PVD equipment also includes a target 104 disposed on the top of the process chamber 100, a magnetron 106 disposed above the target 104, an air inlet device 108 and a vacuum device 107, wherein the target 104 and the DC power supply 105 is electrically connected; the air intake device 108 includes an air intake pipeline and a flow control valve and an on-off valve provided on the intake pipeline. Before performing the PVD process, the process chamber 100 needs to be evacuated to a high vacuum state through the vacuum device 107 . Then, a process gas of a certain pressure is introduced into the process chamber 100 through the air inlet device 108. The process gas can be an inert gas such as argon, and its flow rate is controlled by a mass flow meter installed on the chamber. Switching is achieved through a flow control valve. In addition, the lead cables of the DC electrode and the heating element in the electrostatic chuck, as well as the external pipes of the cooling component, can be extended to the outside of the process chamber through the lifting shaft, where the lead cable of the heating element is connected to the external AC power supply. 109 is electrically connected; the lead cable of the DC electrode is electrically connected to the external DC power supply 103; the external pipeline of the cooling component is connected to the heat exchanger 102.

在實際應用中，本發明實施例提供的半導體製程設備還可以應用於刻蝕(etch)製程，化學氣相沉積(Chemical Vapor Deposition，CVD)製程，以及離子注入製程等等。In practical applications, the semiconductor process equipment provided by the embodiment of the present invention can also be applied to etching process, chemical vapor deposition (CVD) process, ion implantation process, etc.

本發明實施例提供的半導體製程設備，其通過採用本發明實施例提供的上述承載裝置，可以解決現有技術中因水冷盤的冷卻速度過高而導致靜電卡盤無法上升至較高的溫度的問題，從而可以適用於對靜電卡盤有高溫要求的製程；同時還可以解決現有技術中因水冷盤與靜電卡盤之間的溫差過大而導致靜電卡盤受熱不均的問題，提高製程均勻性。The semiconductor processing equipment provided by the embodiment of the present invention can solve the problem in the prior art that the electrostatic chuck cannot rise to a higher temperature due to the excessive cooling speed of the water cooling plate by using the above-mentioned carrying device provided by the embodiment of the present invention. , which can be applied to processes that require high temperatures for electrostatic chucks; at the same time, it can also solve the problem of uneven heating of the electrostatic chuck caused by the excessive temperature difference between the water-cooling plate and the electrostatic chuck in the existing technology, and improve the uniformity of the process.

可以理解的是，以上實施方式僅僅是為了說明本發明的原理而採用的示例性實施方式，然而本發明並不局限於此。對於本領域內的普通技術人員而言，在不脫離本發明的精神和實質的情況下，可以做出各種變型和改進，這些變型和改進也視為本發明的保護範圍。It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, but the present invention is not limited thereto. A person skilled in the art may make various modifications and improvements without departing from the spirit and essence of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

11:晶圓 20:吸附盤 21:通孔 22:直流電極 23:加熱元件 24:凸點 30:冷卻組件 31:勻熱件 32:導熱部件 33:冷卻部件 34:外接管路 40:固定部件 41:頂緊組件 41a:限位環 41b:彈性件 41c:安裝孔 42:容納空間 50:波紋管 51:升降軸 52:法蘭 53:密封圈 100:製程腔室 101:承載裝置 102:熱交換器 103:直流電源 104:靶材 105:直流電源 106:磁控管 107:抽真空裝置 108:進氣裝置 109:交流電源 311:定位凸部 321:傳熱本體 322:薄壁環 323:環狀凸台 324:安裝部 324a:安裝槽 331:環狀蓋板 332:冷卻通道 11:wafer 20:Adsorption disc 21:Through hole 22: DC electrode 23:Heating element 24:Bump 30: Cooling components 31: Even heating parts 32: Thermal conductive parts 33: Cooling components 34: External pipe 40: Fixed parts 41:Tightening components 41a: Limit ring 41b: Elastic parts 41c:Mounting hole 42: Accommodation space 50: bellows 51:Lifting shaft 52:Flange 53:Sealing ring 100: Process chamber 101: Carrying device 102:Heat exchanger 103:DC power supply 104:Target 105:DC power supply 106:Magnetron 107: Vacuum device 108:Air intake device 109:AC power supply 311: Positioning convex part 321:Heat transfer body 322: Thin wall ring 323: Annular boss 324:Installation Department 324a: Installation slot 331: Ring cover 332: Cooling channel

當結合附圖閱讀時，從以下詳細描述最佳理解本揭露之態樣。應注意，根據產業中之標準實踐，各種構件未按比例繪製。事實上，為了論述的清楚起見可任意增大或減小各種構件之尺寸。 圖1為本發明實施例採用的吸附盤的結構圖 圖2A為本發明實施例提供的承載裝置的一種結構圖； 圖2B為本發明實施例提供的承載裝置的另一種結構圖； 圖3為本發明實施例採用的冷卻部件的一種立體剖面圖； 圖4為本發明實施例採用的冷卻部件的另一種剖面圖； 圖5為本發明實施例採用的頂緊組件的結構圖； 圖6為本發明實施例提供的半導體製程設備的結構圖。 The present disclosure is best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or reduced for clarity of discussion. Figure 1 is a structural diagram of an adsorption disc used in an embodiment of the present invention. Figure 2A is a structural diagram of a carrying device provided by an embodiment of the present invention; Figure 2B is another structural diagram of a carrying device provided by an embodiment of the present invention; Figure 3 is a perspective cross-sectional view of the cooling component used in the embodiment of the present invention; Figure 4 is another cross-sectional view of the cooling component used in the embodiment of the present invention; Figure 5 is a structural diagram of the clamping assembly used in the embodiment of the present invention; FIG. 6 is a structural diagram of a semiconductor processing equipment provided by an embodiment of the present invention.

20:吸附盤 20:Adsorption disc

21:通孔 21:Through hole

22:直流電極 22: DC electrode

23:加熱元件 23: Heating element

30:冷卻組件 30: Cooling components

32:導熱部件 32: Heat conducting components

33:冷卻部件 33: Cooling components

40:固定部件 40: Fixed parts

41:頂緊組件 41:Tightening components

41a:限位環 41a: Limiting ring

41b:彈性件 41b: Elastic parts

42:容納空間 42: Accommodation space

50:波紋管 50: Bellows

51:升降軸 51: Lifting shaft

52:法蘭 52:France

53:密封圈 53: Sealing ring

Claims (17)

一種承載裝置，用於一半導體設備中，包括用於一承載待加工晶圓的一吸附盤，以及設置在該吸附盤底部的一冷卻部件和一導熱部件，該導熱部件位於該吸附盤與該冷卻部件之間； 該冷卻部件用於通過該導熱部件對該吸附盤進行冷卻； 該導熱部件用於控制在該冷卻部件與該吸附盤之間的熱傳導速率。 A carrier device, used in a semiconductor device, includes an adsorption plate for carrying a wafer to be processed, and a cooling component and a heat conducting component arranged at the bottom of the adsorption plate, wherein the heat conducting component is located between the adsorption plate and the cooling component; The cooling component is used to cool the adsorption plate through the heat conducting component; The heat conducting component is used to control the heat conduction rate between the cooling component and the adsorption plate. 如請求項1所述的承載裝置，該導熱部件採用一薄壁結構，通過設定該薄壁結構的與傳導熱量相關的一參數來控制該熱傳導速率； 該參數包括該薄壁結構所包含的一薄壁數量，和/或該薄壁結構在該吸附盤軸向上的尺寸，和/或該薄壁結構在該吸附盤徑向上的一橫截面面積。 As described in claim 1, the heat-conducting component adopts a thin-walled structure, and the heat conduction rate is controlled by setting a parameter of the thin-walled structure related to the heat conduction; The parameter includes the number of thin walls contained in the thin-walled structure, and/or the size of the thin-walled structure in the axial direction of the adsorption disk, and/or the cross-sectional area of the thin-walled structure in the radial direction of the adsorption disk. 如請求項2所述的承載裝置，該薄壁結構包括呈環狀的一傳熱本體和設置於該傳熱本體上的至少一個薄壁環；該薄壁環的一端與該傳熱本體連接， 該薄壁環的另一端與該吸附盤連接； 該冷卻部件與該傳熱本體連接。 As for the carrying device of claim 2, the thin-walled structure includes an annular heat transfer body and at least one thin-walled ring disposed on the heat transfer body; one end of the thin-walled ring is connected to the heat transfer body, and the thin-walled ring is connected to the heat transfer body. The other end is connected to the adsorption disc; The cooling component is connected with the heat transfer body. 如請求項3所述的承載裝置，每個該薄壁環與該吸附盤連接的一端設置有一環狀凸台；該環狀凸台的一徑向寬度大於該薄壁環的一徑向寬度。As described in claim 3, the supporting device is provided with an annular boss at one end of each thin-walled ring connected to the adsorption plate; a radial width of the annular boss is greater than a radial width of the thin-walled ring. 如請求項3所述的承載裝置，在該傳熱本體的底部設置有一安裝部，該安裝部上形成有一安裝槽； 該冷卻部件包括用於輸送冷卻媒介的一冷卻管，該冷卻管設置於該安裝槽中。 The carrying device according to claim 3, wherein a mounting part is provided at the bottom of the heat transfer body, and a mounting groove is formed on the mounting part; The cooling component includes a cooling pipe for transporting cooling medium, and the cooling pipe is arranged in the installation groove. 如請求項3所述的承載裝置，該冷卻部件包括與該傳熱本體密封連接的一環狀蓋板，以及在該環狀蓋板的一頂面與該傳熱本體的一底面之間形成的一冷卻通道，用於輸送冷卻媒介。As for the carrying device of claim 3, the cooling component includes an annular cover plate sealingly connected to the heat transfer body, and a top surface of the annular cover plate and a bottom surface of the heat transfer body are formed between A cooling channel for transporting cooling medium. 如請求項1-6任意一項所述的承載裝置，還包括一勻熱件，該勻熱件連接於該吸附盤與該導熱部件之間，該勻熱件用於提高熱傳導的均勻性。The carrying device according to any one of claims 1 to 6, further comprising a heat-distributing member connected between the adsorption plate and the heat-conducting component, and the heat-distributing member is used to improve the uniformity of heat conduction. 如請求項7所述的承載裝置，在該勻熱件與該吸附盤之間設置有一熱介面材料層。In the supporting device as described in claim 7, a thermal interface material layer is arranged between the uniform heating element and the adsorption plate. 如請求項8所述的承載裝置，該熱介面材料層的材質包括石墨、石墨烯或者鋁箔。In the carrier device as described in claim 8, the material of the thermal interface material layer includes graphite, graphene or aluminum foil. 如請求項1‑6任意一項所述的承載裝置，還包括一固定部件和一頂緊元件，其中，該固定部件連接於該吸附盤的底部，且與該吸附盤的底部合圍成一容納空間；該導熱部件、該冷卻部件和該頂緊元件均位於該容納空間中； 該頂緊元件位於該導熱部件與該固定部件之間，用於向該導熱部件施加朝向該吸附盤的壓力。 The carrier device as described in any one of claim items 1-6 further comprises a fixing component and a top tightening element, wherein the fixing component is connected to the bottom of the adsorption plate and encloses a receiving space with the bottom of the adsorption plate; the heat conductive component, the cooling component and the top tightening element are all located in the receiving space; the top tightening element is located between the heat conductive component and the fixing component, and is used to apply pressure to the heat conductive component toward the adsorption plate. 如請求項10所述的承載裝置，該吸附盤的材質為陶瓷，該固定部件的材質包括鐵鈷鎳合金。As for the carrying device described in claim 10, the material of the adsorption plate is ceramic, and the material of the fixed component includes iron-cobalt-nickel alloy. 如請求項11所述的承載裝置，該頂緊組件包括一限位環和設置於該限位環上的多個彈性件，且多個該彈性件沿該限位環的周向均勻分佈； 該限位環的一頂面與該導熱部件的一底面相接觸； 多個該彈性件設置於該限位環與該固定部件之間，用於通過產生彈性變形而向該限位環施加朝向該吸附盤的壓力。 As described in claim 11, the top tightening assembly includes a limiting ring and a plurality of elastic members disposed on the limiting ring, and the plurality of elastic members are evenly distributed along the circumference of the limiting ring; A top surface of the limiting ring contacts a bottom surface of the heat conducting component; The plurality of elastic members are disposed between the limiting ring and the fixing component, and are used to apply pressure to the limiting ring toward the adsorption plate by generating elastic deformation. 如請求項12所述的承載裝置，該限位環的底面上形成有多個安裝孔，多個該彈性件一一對應地設置於多個該安裝孔中。As described in claim 12, the supporting device has a plurality of mounting holes formed on the bottom surface of the limiting ring, and the plurality of elastic members are arranged in the plurality of mounting holes in a one-to-one correspondence. 如請求項1所述的承載裝置，該導熱部件的材質包括不銹鋼、鉬或者鎳基合金。In the supporting device as described in claim 1, the material of the heat-conducting component includes stainless steel, molybdenum or nickel-based alloy. 如請求項7所述的承載裝置，該導熱部件與該勻熱件的連接方式包括焊接、壓接或者鉚接。As for the carrying device described in claim 7, the connection method between the heat conductive component and the heat dissipating component includes welding, crimping or riveting. 如請求項5所述的承載裝置，該冷卻管與該安裝部的連接方式包括焊接、壓接或者鉚接。As for the carrying device according to claim 5, the connection method between the cooling pipe and the mounting part includes welding, crimping or riveting. 一種半導體製程設備，包括一製程腔室和設置在該製程腔室中的一承載裝置，該承載裝置採用如請求項1至16中任一項所述的承載裝置。A semiconductor processing equipment includes a process chamber and a bearing device disposed in the process chamber. The bearing device adopts the bearing device described in any one of claims 1 to 16.