TW202405454A

TW202405454A - Probes with planar unbiased spring elements for electronic component contact, methods for making such probes, and methods for using such probes

Info

Publication number: TW202405454A
Application number: TW112112663A
Authority: TW
Inventors: 艾倫Ｓ維拉馬尼; 明庭吳; 丹尼斯Ｒ史摩里
Original assignee: 美商微製造股份有限公司
Priority date: 2022-04-06
Filing date: 2023-03-31
Publication date: 2024-02-01

Abstract

Probe array for contacting electronic components includes a plurality of probes for making contact between two electronic circuit elements and a dual array plate mounting and retention configuration. The probes may comprise lower retention features that protrudes from a probe body with a size and configuration that limits the longitudinal extent to which the probes can be inserted into lower plate probe holes of a lower array plate and an upper retention feature extending laterally from the probe body and longitudinally spaced from the lower retention feature by a gap that is larger than a thickness of a longitudinal engagement portion of the upper array plate, the upper retention feature having a lateral configuration that is sized to pass through the extension provided by the side wall feature when aligned and after longitudinally locating the upper retention feature above the extension of the upper plate probe hole in the upper array plate, the retention feature undergoes lateral displacement relative to the upper plate probe hole such that the upper retention feature can no longer longitudinally pass through the extension of the upper plate probe hole in the upper array plate.

Description

用於電子組件接觸的具有平面無偏彈簧元件的探針、這種探針的製造方法、及這種探針的使用方法Probes with planar unbiased spring elements for contacting electronic components, methods of making such probes, and methods of using such probes

本發明的實施例涉及微探針(例如，用於集成電路的晶片級測試或插座測試，或者用於與PCB或其他電子元件進行電連接)，並且更具體地涉及針狀微探針(即，垂直或縱向高度大於其寬度的微探針(例如，在一些實施例中大5倍，在其他實施例中大10倍，在還有其他實施例中大20倍)、或按鈕狀探針，其中彈簧元件在處於未偏置狀態時具有平面構造。在一些實施例中，微探針至少部分地通過電化學製造方法並且更具體地通過多層、多材料電化學製造方法來生產，並且其中，在一些實施例中，多個探針以陣列形式保持時投入使用，所述陣列形式包括一個或多個具有通孔的板，通孔接合探針和/或其他陣列保持結構的特徵。Embodiments of the present invention relate to microprobes (e.g., for wafer-level testing or socket testing of integrated circuits, or for making electrical connections to PCBs or other electronic components), and more particularly to needle-shaped microprobes (i.e., , a microprobe with a vertical or longitudinal height greater than its width (e.g., 5 times larger in some embodiments, 10 times larger in other embodiments, 20 times larger in still other embodiments), or a button-shaped probe , wherein the spring element has a planar configuration when in an unbiased state. In some embodiments, the microprobe is produced at least in part by an electrochemical fabrication method and more specifically by a multi-layer, multi-material electrochemical fabrication method, and wherein , in some embodiments, multiple probes are put into use while being held in an array format that includes one or more plates with through-holes that engage the probes and/or other features of the array-holding structure.

探針：Probe:

許多電接觸探針和針配置已經在商業上使用或提出，其中一些可以符合現有技術，而另一些則不符合現有技術。這種針、探針和製造方法的示例在例如專利公開號US 2005-0104609、US 2006-0006888、US 2005-0184748、US 2006-0108678、US 2006-0238209和專利號US 7,640,651、US 7,265,565、US 7,412,767、US 7,273,812、US 10,215,775、US 11,262,383中闡述。Many electrical contact probes and needle configurations have been commercially used or proposed, some of which may be consistent with the prior art, while others are not. Examples of such needles, probes and manufacturing methods are found, for example, in patent publications US 2005-0104609, US 2006-0006888, US 2005-0184748, US 2006-0108678, US 2006-0238209 and patents US 7,640,651, US 7,265,565, US 7,412,767, US 7,273,812, US 10,215,775, US 11,262,383.

電化學製造electrochemical manufacturing

一種用於形成由多個黏合層形成的三維結構的電化學製造技術，已由(或正由)加利福尼亞州Van Nuys的Microfabrica®公司(原MEMGen公司)以製程名稱EFAB和MICA FREEFORM®進行商業開發。An electrochemical fabrication technology for forming three-dimensional structures formed from multiple bonding layers that has been (or is being) commercially developed by Microfabrica® Inc. (formerly MEMGen Inc.) of Van Nuys, Calif., under the process names EFAB and MICA FREEFORM® .

2000 年 2 月 22 日授予 Adam Cohen 的美國專利號 6,027,630 描述了各種電化學製造技術。U.S. Patent No. 6,027,630, issued to Adam Cohen on February 22, 2000, describes various electrochemical fabrication techniques.

Henry Guckel 的美國專利號 5,190,637 教導了另一種使用電化學製造技術形成微結構的方法，題目為“Formation of Microstructs by Multiple Level Deep X-ray Lithography with Sacrificial Metal Layers”。Another method of forming microstructures using electrochemical fabrication techniques is taught by Henry Guckel's U.S. Patent No. 5,190,637, entitled "Formation of Microstructs by Multiple Level Deep X-ray Lithography with Sacrificial Metal Layers."

電化學製造提供了以合理的成本和合理的時間形成原型和商業數量的微型物體、零件、結構、設備等的能力。事實上，電化學製造能夠形成許多迄今為止無法生產的結構。電化學製造為許多工業領域的新設計和產品開闢了新的領域。儘管電化學製造提供了這種新功能，並且應當理解，電化學製造技術可以與各個領域內已知的設計和結構相結合以產生新的結構，電化學製造的某些用途提供了鑑於現有技術而未知或顯而易見的設計、結構、能力和/或特徵。Electrochemical manufacturing provides the ability to form prototype and commercial quantities of microscopic objects, parts, structures, devices, etc. at reasonable cost and reasonable time. In fact, electrochemical fabrication enables the formation of many structures that have hitherto been impossible to produce. Electrochemical manufacturing opens up new frontiers for new designs and products in many industrial sectors. Although electrochemical fabrication provides this new capability, and it should be understood that electrochemical fabrication techniques can be combined with designs and structures known in various fields to produce new structures, certain uses of electrochemical fabrication provide new capabilities in view of existing technologies. and unknown or obvious design, structure, capabilities and/or characteristics.

各個領域都需要具有改進的特性、減少的製造時間、降低的製造成本、簡化的製造工藝、器件設計的更大通用性、改進的材料選擇、改進的材料特性、更具成本效益和更低風險的生產的微型器件此類設備的結構，及/或幾何配置和所選製造工藝之間的更多獨立性。There is a need in various fields for improved properties, reduced manufacturing time, reduced manufacturing costs, simplified manufacturing processes, greater versatility in device design, improved material selection, improved material properties, more cost-effectiveness and lower risk The production of microdevices by such devices provides greater independence between the structure, and/or geometric configuration and the chosen manufacturing process.

本發明一些實施例的目的是提供改進的探針陣列，其包括探針，所述探針包括由多個順應模塊形成的順應元件，所述順應模塊包括平面但非線性(即，非直的)彈簧構造(即，彈簧配置不是沒有彎曲或角度的直條，而是在至少一層提供彎曲或曲線的平面內具有某種二維配置)，當偏置時，其中彈簧的平面垂直於探針的縱軸並且提供沿著探針的縱軸的順應性，其中順應模塊以連串的方式堆疊。具有非線性彈簧構造的探針可以在偏置時提供線性彈簧返迴力或非線性返迴力。It is an object of some embodiments of the present invention to provide improved probe arrays that include probes that include compliant elements formed from a plurality of compliant modules that include planar but non-linear (i.e., non-straight) ) spring configuration (i.e., the spring configuration is not a straight bar without bends or angles, but rather has some two-dimensional configuration in at least one plane that provides bends or curves) where the plane of the spring is perpendicular to the probe when biased the longitudinal axis of the probe and provides compliance along the longitudinal axis of the probe, where the compliant modules are stacked in a series. Probes with nonlinear spring configurations can provide either a linear spring return force or a nonlinear return force when biased.

在本發明的再一方面，探針陣列包括：(1) 多個探針用於在兩個電子電路元件之間進行接觸，每一探針包括：(a) 至少一順應結構，包括：(i) 至少一支座，具有縱向分開的第一端和第二端；(ii) 至少一第一順應元件，包括當未偏置時的一二維實質平面的彈簧，其中，在實質垂直於一平面配置的一方向上，該第一順應元件提供順從性，其中該第一順應元件的一第一部分功能性地結合該至少一支座，並且該第一順應元件的一第二部分功能性地結合一第一尖端臂，該第一尖端臂可相對於該至少一支座彈性移動，其中，當該第一順應元件未偏置時，該第一尖端臂直接或間接地保持一第一尖端縱向延伸超出該至少一支座的第一端；和(iii)至少一個第二順應元件，包括一彈簧，其中，在實質垂直於該平面配置的一方向上，該第二順應元件提供順從性，其中該第二順應元件的一第一部分功能性地結合該至少一支座，並且該第二順應元件的一第二部分功能性地結合一第二尖端臂，該第二尖端臂可以相對於該至少一支座彈性移動，其中，當該第二順應元件未偏置時，該第二尖端臂直接或間接地保持一第二尖端縱向延伸超出該至少一支座的該第二端，其中該第一和第二順應元件的該第一部分經由該至少一支座彼此縱向間隔開，且其中，當該第一和第二尖端中的至少一個朝向另一個偏置時，該第一和第二順應元件的該第二部分以選自於由以下方式所組成的群組的一方式縱向移動：(A)一起移動得更近，和(B)更遠；(2)具有多個下板探針孔的一下陣列板；(3)具有多個上板探針孔的一上陣列板，其中上板探針孔的至少一部分包括至少一個側壁特徵，其提供將該上陣列板上的每個上板探針孔延伸至比下陣列板上的一對應的下板探針孔的一對應部分更寬的寬度，其中該下陣列板被配置為從該下陣列板上方接收該探針；其中上陣列板被配置為從該上陣列板)下方接收該探針；其中該多個探針的至少一部分更包括至少一下保持特徵和至少一上保持特徵，該至少一下保持特徵被配置為至少接合該下陣列板，該至少一上保持特徵被配置為至少接合該上陣列板；其中該至少一下保持特徵包括至少一橫向延伸特徵，該至少一橫向延伸特徵由個別探針的一主體突出，其大小和結構限制個別探針可***下陣列板的下板探針孔)的縱向範圍；其中該至少一上保持特徵包括至少一凸片狀特徵，其在該下保持特徵上方的水平處從個別探針的該主體橫向延伸，且與該下保持特徵縱向間隔開一間隙，該間隙大於該上陣列板的一縱向接合部的厚度，且其中，該至少一上保持特徵具有一橫向配置，其尺寸為對齊時穿過上陣列板上的上板探針孔的側壁特徵所提供的延伸；以及其中，在將該上保持特徵縱向定位在該上陣列板中的上板探針孔的延伸上方之後，該上保持特徵(相對於該上板探針孔進行橫向位移，使得該至少一上保持特徵不能再縱向穿過該上陣列板中的上板探針孔的該延伸。In yet another aspect of the invention, a probe array includes: (1) a plurality of probes for making contact between two electronic circuit components, each probe including: (a) at least one compliant structure including: (a) i) at least one support having longitudinally spaced first and second ends; (ii) at least one first compliant element comprising a two-dimensional substantially planar spring when unbiased, wherein the spring is substantially perpendicular to The first compliant element provides compliance in a planar configuration, wherein a first portion of the first compliant element functionally engages the at least one support, and a second portion of the first compliant element functionally engages the at least one support In conjunction with a first tip arm, the first tip arm is resiliently moveable relative to the at least one base, wherein the first tip arm directly or indirectly retains a first tip when the first compliant element is not biased extending longitudinally beyond the first end of the at least one support; and (iii) at least one second compliant element including a spring, wherein the second compliant element provides compliance in a direction substantially perpendicular to the planar configuration, wherein a first portion of the second compliant element functionally engages the at least one base, and a second portion of the second compliant element functionally engages a second tip arm, the second tip arm can be relative to the At least one mount is resiliently movable, wherein when the second compliant element is unbiased, the second tip arm directly or indirectly maintains a second tip extending longitudinally beyond the second end of the at least one mount, wherein the The first portions of the first and second compliant elements are longitudinally spaced apart from each other via the at least abutment, and wherein when at least one of the first and second tips is biased toward the other, the first and second compliant elements The second portion of the compliant element moves longitudinally in a manner selected from the group consisting of: (A) moving closer together, and (B) farther together; (2) having multiple lower plate probes a lower array plate with pinholes; (3) an upper array plate having a plurality of upper plate probe holes, wherein at least a portion of the upper plate probe holes include at least one sidewall feature that provides connection to each of the upper plate probe holes; The upper plate probe holes extend to a width wider than a corresponding portion of a corresponding lower plate probe hole on the lower array plate, wherein the lower array plate is configured to receive the probe from above the lower array plate; wherein The upper array plate is configured to receive the probe from below the upper array plate; wherein at least a portion of the plurality of probes further includes at least one lower retention feature and at least one upper retention feature, the at least one lower retention feature is configured to at least engage the lower array plate, the at least one upper retention feature configured to at least engage the upper array plate; wherein the at least one lower retention feature includes at least one laterally extending feature projecting from a body of the respective probe, which The size and structure limit the longitudinal extent into which individual probes can be inserted into the lower plate probe holes of the lower array plate; wherein the at least one upper retention feature includes at least one tab-like feature that extends from the individual probe at a level above the lower retention feature. The body of the probe extends transversely and is longitudinally spaced from the lower retention feature by a gap greater than a thickness of a longitudinal joint of the upper array plate, and wherein the at least one upper retention feature has a transverse configuration with Dimensions are the extension provided by the sidewall features through the upper plate probe holes on the upper array plate when aligned; and Thereafter, the upper retaining feature is laterally displaced relative to the upper plate probe hole such that the at least one upper retaining feature can no longer longitudinally pass through the extension of the upper plate probe hole in the upper array board.

本發明的上述方面存在多種變化，並且本領域技術人員在審閱本文的教導後將顯而易見。Various variations exist in the above-described aspects of the invention, and will be apparent to those skilled in the art upon review of the teachings herein.

本領域技術人員在審閱本文的教導後將理解本發明的其他方面。本發明的其他方面可以涉及上述方面的組合。本發明的這些其他方面可以提供上述方面的各種組合，並提供上面未具體闡述但由本文闡述的其他具體教導所教示的其他配置、結構、功能關係和過程，經由整個說明書的教導，或通過引用並引入本文的教導。Those skilled in the art will understand other aspects of the invention upon review of the teachings herein. Other aspects of the invention may involve combinations of the above aspects. These other aspects of the invention may provide various combinations of the above-described aspects and provide other configurations, structures, functional relationships, and processes not specifically set forth above but taught by other specific teachings set forth herein, taught throughout the specification, or by reference and introduce the teachings of this article.

電化學製造概述Electrochemical Manufacturing Overview

圖1A-1I示出示例性多層、多材料電化學製造工藝中的各種狀態的側視圖。圖1A-1G示出了多層製造工藝的單層形成的各個階段，其中第二金屬沉積在第一金屬上以及第一金屬的開口中，使得第一和第二金屬形成該層的一部分。在圖1A中，示出了具有表面88的基底82的側視圖，可圖案化光致抗蝕劑(photeresist)84位於其上，如圖1B所示。在圖1C中，示出了由抗蝕劑(resist)的固化、曝光和顯影產生的抗蝕劑圖案。光致抗蝕劑84的圖案化產生從光致抗蝕劑的表面86穿過光致抗蝕劑的厚度延伸至基底82的表面88的開口或孔92(a)-92(c)。在圖1D中，金屬94(例如，鎳)被示出為已被電鍍到開口92(a)-92(c)中。在圖1E中，光致抗蝕劑已經從基底去除(即，化學地或以其他方式剝離)以暴露基底82的未被第一金屬94覆蓋的區域。在圖1F中，第二金屬96(例如，銀)被示為已被毯式電鍍在基底82的整個暴露部分(其是導電的)之上以及第一金屬94(其也是導電的)之上。圖1G描繪了結構的完成的第一層，其是由將第一金屬和第二金屬平坦化至暴露第一金屬並設定第一層的厚度的高度而產生的。在圖1H中，是顯示重複圖1B-1G所示的處理步驟多次的結果，以形成多層結構，其中每層由兩種材料組成。對於大多數應用，這些材料中的一種被去除，如圖 1I 所示，以產生期望的3-D結構98(例如，組件或裝置)或多個這樣的結構。1A-1I illustrate side views of various states in an exemplary multi-layer, multi-material electrochemical fabrication process. 1A-1G illustrate various stages of single layer formation of a multi-layer manufacturing process in which a second metal is deposited on the first metal and in the openings of the first metal such that the first and second metals form part of the layer. In FIG. 1A , a side view of a substrate 82 is shown having a surface 88 with a patternable photoresist 84 disposed thereon, as shown in FIG. 1B . In Figure 1C, a resist pattern resulting from curing, exposure and development of resist is shown. Patterning of photoresist 84 creates openings or holes 92(a)-92(c) extending from surface 86 of the photoresist through the thickness of the photoresist to surface 88 of substrate 82. In Figure ID, metal 94 (eg, nickel) is shown having been electroplated into openings 92(a)-92(c). In FIG. 1E , the photoresist has been removed (ie, chemically or otherwise stripped) from the substrate to expose areas of substrate 82 not covered by first metal 94 . In FIG. 1F , a second metal 96 (eg, silver) is shown as having been blanket plated over the entire exposed portion of substrate 82 (which is electrically conductive) and over first metal 94 (which is also electrically conductive). . Figure 1G depicts the completed first layer of the structure resulting from planarizing the first and second metals to a height that exposes the first metal and sets the thickness of the first layer. In Figure 1H, the results of repeating the processing steps shown in Figures 1B-1G multiple times are shown to form a multi-layer structure, where each layer is composed of two materials. For most applications, one of these materials is removed, as shown in Figure 1I, to produce the desired 3-D structure 98 (e.g., component or device) or a plurality of such structures.

本發明各個方面的各個實施例涉及由材料形成三維結構，其中一些或全部可以是電沉積或化學沉積的(如圖1A-1I的示例中所示，並且在通過引用併入本文的各種專利申請中進行了討論)。這些結構中的一些可以由一種或由多種沉積材料形成的單個構建層形成，而其他結構由多個構建層形成，每個構建層包括至少兩種材料(例如，兩層或更多層，更優選五層或更多層) ，並且最優選十層或更多層)。在一些實施例中，層厚度可以小至一微米或大至五十微米。在其他實施例中，可以使用較薄的層，而在其他實施例中，可以使用較厚的層。在一些實施例中，微米級結構具有以0.1-10微米級精度定位的橫向特徵以及微米至數十微米量級的最小特徵尺寸。在其他實施例中，可以形成具有不太精確的特徵配置及/或更大的最小特徵的結構。在又一些實施例中，可能需要更高的精度和更小的最小特徵尺寸。在本申請中，介觀尺度(meso-scale)和毫米尺度具有相同的含義，並且指的是可具有可延伸至0.5-50毫米範圍或更大的一個或多個尺寸的裝置，並且特徵定位精度在微米到100微米範圍內，最小特徵尺寸在數十微米到數百微米的量級。Various embodiments of various aspects of the present invention involve forming three-dimensional structures from materials, some or all of which may be electrodeposited or chemically deposited (as shown in the examples of FIGS. 1A-1I and in the various patent applications incorporated herein by reference). discussed in ). Some of these structures may be formed from a single build layer of one or more deposited materials, while other structures are formed from multiple build layers, each build layer including at least two materials (e.g., two or more layers, more Five or more layers are preferred), and ten or more layers are most preferred). In some embodiments, layer thickness can be as small as one micron or as large as fifty microns. In other embodiments, thinner layers may be used, and in other embodiments, thicker layers may be used. In some embodiments, micron-scale structures have lateral features positioned with precision on the order of 0.1-10 microns and minimum feature sizes on the order of microns to tens of microns. In other embodiments, structures may be formed with less precise feature configurations and/or larger minimum features. In still other embodiments, higher accuracy and smaller minimum feature sizes may be required. In this application, meso-scale and millimeter scale have the same meaning and refer to devices that may have one or more dimensions extending into the 0.5-50 mm range or greater, and where features are located The accuracy is in the range of microns to 100 microns, and the minimum feature size is on the order of tens to hundreds of microns.

本文公開的各種實施例、替代方案和技術可以在所有層上使用單一圖案化技術或在不同層上使用不同圖案化技術來形成多層結構。例如，本發明的各種實施例可以執行選擇性圖案化操作，使用適形接觸掩模和掩模操作(即，使用接觸但不粘附到基底的掩模的操作)、接近掩模和掩模操作(即，使用掩模的操作，即使沒有進行接觸，掩模也通過接近基底而至少部分地選擇性地屏蔽基底)、非適形掩模和掩模操作(即掩模和基於接觸表面不明顯適形的掩模的操作)，和/或粘附掩模和掩模操作(掩模和使用粘附到基底的掩模的操作，在該基底上將發生選擇性沉積或蝕刻，而不是僅與其接觸)。適形接觸掩模、接近掩模和非適形接觸掩模具有相同的特性，即它們被預先形成並帶到或接近待處理的表面(即，待處理的表面的暴露部分)。這些掩模通常可以在不損壞掩模或它們所接觸或位於附近的接受處理的表面的情況下被移除。粘附的掩模通常形成在待處理的表面(即，該表面的待被掩模的部分)上並粘合到該表面，使得它們不能與該表面分離，除非在任何再利用點之外被完全破壞或損壞。粘合掩模可以多種方式形成，包括：(1)通過施加光致抗蝕劑，選擇性曝光光致抗蝕劑，然後顯影光致抗蝕劑，(2)選擇性轉移預圖案化掩模材料，及/或( 3)通過計算機控制的材料沉積直接形成掩模。在一些實施例中，粘附的掩模材料可以用作該層的犧牲物，或者可以僅用作掩模材料，在完成層的形成之前，該掩模材料被另一種材料(例如，電介質或導電材料)替換，其中替換材料將被視為相應層的犧牲材料。在將材料沉積到其中所包括的空隙或開口中之前或之後，掩模材料可以被平坦化或可以不被平坦化。Various embodiments, alternatives, and techniques disclosed herein may form multi-layer structures using a single patterning technique on all layers or using different patterning techniques on different layers. For example, various embodiments of the present invention may perform selective patterning operations using conformal contact masks and mask operations (i.e., operations using a mask that contacts but does not adhere to the substrate), proximity masks, and mask operations. operations (i.e., operations using a mask that at least partially selectively shields the substrate by proximity even if no contact is made), non-conformal masking, and masking operations (i.e., the mask and the contact surface are not based on operations with significantly conformable masks), and/or adhesive masks and mask operations (masks and operations with masks that are adhered to a substrate on which selective deposition or etching will occur rather than only contact with it). Conformal contact masks, proximity masks, and non-conformal contact masks have the same characteristic in that they are preformed and brought to or close to the surface to be treated (ie, the exposed portion of the surface to be treated). These masks can generally be removed without damaging the masks or the surfaces being treated that they contact or are located near. Adherent masks are typically formed on the surface to be treated (i.e., the portion of the surface to be masked) and are bonded to the surface such that they cannot be separated from the surface unless removed outside of any point of reuse. Completely destroyed or damaged. Adhesion masks can be formed in a variety of ways, including: (1) by applying photoresist, selectively exposing the photoresist, and then developing the photoresist, (2) selectively transferring a pre-patterned mask materials, and/or (3) direct mask formation by computer-controlled deposition of materials. In some embodiments, the adhered masking material may be used as a sacrifice for the layer, or may be used solely as a masking material that is replaced by another material (e.g., dielectric or conductive material) replacement, where the replacement material will be considered a sacrificial material for the corresponding layer. The mask material may or may not be planarized before or after depositing material into the voids or openings contained therein.

圖案化操作可以用於選擇性沉積材料及/或可以用於選擇性蝕刻材料。選擇性蝕刻的區域可以選擇性地填充或通過毯式沉積等用不同的期望材料填充。在一些實施例中，逐層構建可以涉及同時形成多個層的部分。在一些實施例中，與一些層水平相關聯地進行的沉積可以導致對與其他層水平相關聯的區域(即，位於限定不同層的幾何配置的頂部和底部邊界水平內的區域)的沉積。與多層相關的選擇性蝕刻及/或交錯材料沉積的這種使用在Smalley於2003年5月7日提交的美國專利申請No.10/434,519中有所描述，該專利申請現為美國專利7,252,861，並且其標題為“通過交錯層或通過選擇性蝕刻和填充空隙電化學製造結構的方法和裝置(Methods of and Apparatus for Electrochemically Fabricating Structures Via Interlaced Layers or Via Selective Etching and Filling of Voids)”。該參考申請通過引用併入本文。Patterning operations can be used to selectively deposit material and/or can be used to selectively etch material. The selectively etched areas may be selectively filled or filled with different desired materials by blanket deposition or the like. In some embodiments, layer-by-layer building may involve forming portions of multiple layers simultaneously. In some embodiments, deposition performed in association with some layer levels may result in deposition of regions associated with other layer levels (ie, regions within the top and bottom boundary levels that define the geometric configuration of the different layers). This use of selective etching and/or staggered material deposition in connection with multiple layers is described in Smalley's U.S. Patent Application No. 10/434,519, filed on May 7, 2003, now U.S. Patent 7,252,861, And its title is "Methods of and Apparatus for Electrochemically Fabricating Structures Via Interlaced Layers or Via Selective Etching and Filling of Voids". This referenced application is incorporated herein by reference.

其上可形成結構的臨時基底可以是犧牲型的(即，在沉積材料的分離過程中被破壞或損壞到不能再使用的程度)或非犧牲型的(即，沒有被破壞或過度破壞)損壞，即未損壞到不能重複使用的程度，例如，犧牲層或釋放層位於基底和所形成結構的初始層之間。非犧牲基底可以被認為是可重複使用的，幾乎不需要重工(例如，通過重新平坦化一個或多個選定的表面或施加釋放層等)，儘管它們可能由於多種原因而可以或不可以重複使用。The temporary substrate on which structures may be formed may be sacrificial (i.e., destroyed or damaged during the separation process of the deposited material to the extent that it cannot be reused) or non-sacrificial (i.e., not damaged or excessively damaged) , that is, not damaged to the point that it cannot be reused, for example, a sacrificial layer or a release layer located between the substrate and the initial layer of the formed structure. Non-sacrificial substrates can be considered reusable and require little to no rework (e.g., by re-planarizing one or more selected surfaces or applying a release layer, etc.), although they may or may not be reusable for a variety of reasons .

可用於理解本發明的實施例的各種術語和概念的定義(對於裝置本身、用於製造裝置的某些方法、或用於使用裝置的某些方法)將被本領域技術人員理解。本文討論了一些這樣的術語和概念，而其他這樣的術語在本申請要求其優先權和/或通過引用併入本文的各種專利申請(例如，美國專利申請No.16/584,818)中闡述。Definitions of various terms and concepts that may be used to understand embodiments of the invention (either for the device itself, for certain methods of making the device, or for certain methods of using the device) will be understood by those skilled in the art. Some such terms and concepts are discussed herein, while other such terms are set forth in various patent applications to which this application claims priority and/or are incorporated herein by reference (eg, U.S. Patent Application No. 16/584,818).

如本文所用，“縱向”是指探針的長尺寸、探針的端部到端部尺寸、或尖端到尖端尺寸。縱向可以指的是從探針的一端延伸到探針的另一端的大體直線，或者它可以指的是沿著探針的高度具有傾斜的或者甚至變化的方向的彎曲的或階梯狀的路徑。當提及探針陣列或將被加載到陣列配置中的探針時，縱向尺寸可以指陣列中的探針指向或延伸的特定方向，但它也可以簡單地指陣列的總高度，探針起始於包含多個探針的第一端、尖端或基部的平面，並垂直於包含探針的第二端、尖端或頂部的平面延伸。使用的上下文通常清楚地表明其含義，特別是對於本領域技術人員而言。旨在將應用於本文中的術語的解釋與所提供的描述的細節或使用該術語的上下文所保證的一樣狹窄。然而，如果不保證這種狹義解釋，則旨在適用最廣泛的合理解釋範圍。As used herein, "longitudinal" refers to the long dimension of the probe, the end-to-end dimension, or the tip-to-tip dimension of the probe. Longitudinal may refer to a generally straight line extending from one end of the probe to the other end of the probe, or it may refer to a curved or stepped path with a sloped or even varying direction along the height of the probe. When referring to a probe array or probes that will be loaded into an array configuration, the longitudinal dimension can refer to the specific direction in which the probes in the array point or extend, but it can also simply refer to the overall height of the array, where the probes Beginning in a plane containing the first ends, tips, or bases of the plurality of probes and extending perpendicularly to a plane containing the second ends, tips, or tops of the probes. The context of use usually makes the meaning clear, especially to a person skilled in the art. It is intended that terms applied herein be construed as narrowly as warranted by the details of the description provided or the context in which the term is used. However, where such narrow interpretation is not warranted, the broadest reasonable scope of interpretation is intended to apply.

本文使用的“橫向”與術語縱向相關。就層的堆疊而言，橫向是指每層內的方向，或每層內的兩個垂直方向(即，位於實質垂直於層堆疊方向的層的平面內的一個或多個方向)。當提及探針陣列時，橫向通常具有類似的含義，因為橫向尺寸通常是位於與陣列的頂部或底部的平面平行的平面中的尺寸(即，實質垂直於縱向尺寸)。當提及探針本身時，橫向尺寸可以是垂直於探針的整體縱軸、探針的局部縱軸(即局部橫向尺寸)的尺寸，或者簡單地是與針對陣列或層標註的尺寸類似的尺寸。使用的上下文通常清楚地表明其含義，特別是對於本領域技術人員而言。旨在將應用於本文中的術語的解釋與所提供的描述的細節或使用該術語的上下文所保證的一樣狹窄。如果沒有必要進行此類狹義解釋，則旨在適用最廣泛的合理解釋範圍。As used herein, "horizontal" is related to the term vertical. With respect to a stacking of layers, lateral direction refers to a direction within each layer, or two perpendicular directions within each layer (ie, one or more directions in the plane of the layer that is substantially perpendicular to the direction in which the layers are stacked). When referring to probe arrays, lateral direction generally has a similar meaning, since the lateral dimension is usually a dimension lying in a plane parallel to the plane of the top or bottom of the array (ie, substantially perpendicular to the longitudinal dimension). When referring to the probe itself, the lateral dimension may be a dimension perpendicular to the overall longitudinal axis of the probe, a local longitudinal axis of the probe (i.e., a local lateral dimension), or simply dimensions similar to those noted for the array or layer size. The context of use usually makes the meaning clear, especially to a person skilled in the art. It is intended that terms applied herein be construed as narrowly as warranted by the details of the description provided or the context in which the term is used. Where such a narrow interpretation is not necessary, the broadest reasonable scope of interpretation is intended to apply.

如本文所用，“實質平行”是指平行或接***行的事物，即，在平行的15°之內，更優選地在平行的10°之內，甚至更優選地在平行的5°之內，並且最優選地在平行的1°內。如果在沒有明確說明的情況下使用該術語，則應將其解釋為平行的 15° 以內。當與具體說明一起使用時，該術語應根據具體說明進行解釋。As used herein, "substantially parallel" means something that is parallel or nearly parallel, i.e., within 15° of parallel, more preferably within 10° of parallel, even more preferably within 5° of parallel, and most preferably within 1° of parallel. If this term is used without explicit instruction, it should be interpreted to mean within 15° of parallel. When used in conjunction with a specific description, the term shall be construed in accordance with the specific description.

如本文所用，“實質垂直”或“實質正交”是指垂直或接近垂直的物體，即，在垂直的15°內，更優選地在垂直的10°內，甚至更優選地在垂直的5°內，並且最優選地在垂直的1°之內。如果在沒有明確說明的情況下使用該術語，則應將其解釋為在垂直的15° 以內。當與具體說明一起使用時，該術語應根據具體說明進行解釋。As used herein, "substantially vertical" or "substantially orthogonal" refers to an object that is vertical or nearly vertical, i.e., within 15° of vertical, more preferably within 10° of vertical, even more preferably within 5° of vertical °, and most preferably within 1° of vertical. If this term is used without explicit instruction, it should be interpreted to mean within 15° of vertical. When used in conjunction with a specific description, the term shall be construed in accordance with the specific description.

當提及表面時，如本文所用，“實質平坦的”是指旨在為平坦的表面，儘管如本領域技術人員將理解的，可能存在一些缺陷(即，可能偏離平面度相差高達1-5微米，但當涉及毫米級和微米級裝置時，本質上通常是次微米，如本文所述的主要裝置實施例)。如果在沒有澄清的情況下使用該術語，則應將其解釋為具有偏離平面度不超過 5 微米的缺陷。當與具體說明一起使用時，該術語應根據具體說明進行解釋。當提及結構時，該術語並不是指無限薄的結構，而是指形成有實質平坦的頂表面和底表面的結構，例如，每一層或連續形成的組的頂表面和底表面。使用多材料、多層電化學製造方法形成的結構的各層，特別是當每個層經歷諸如研磨(lapping)、飛切(fly cutting)、化學機械平坦化、以旋轉鋪展(spreading by spinning)等平坦化操作時。在一些情況下，實質平面的結構還可以意味著該結構或該結構的元件與該結構在兩個垂直維度上的尺寸相比在高度或厚度上較小(即，垂直足跡與厚度的比率大於25，優選地大於50，更優選地大於100，並且最優選地大於200)。如果該術語在沒有澄清的情況下用於結構，則其應當被解釋為滿足上表面和下表面的基本平坦的表面標準。在一些情況下，比率要求也可適用，即至少25的比率。當用於具有具體說明的結構時，該術語應根據具體說明進行解釋。When referring to a surface, as used herein, "substantially flat" means a surface that is intended to be flat, although as one skilled in the art will appreciate, some imperfections may be present (i.e., may deviate from flatness by as much as 1-5 Micron, but often sub-micron in nature when it comes to millimeter and micron scale devices, such as the primary device embodiments described herein). If this term is used without clarification, it should be interpreted as having defects that deviate not more than 5 microns from flatness. When used in conjunction with a specific description, the term shall be construed in accordance with the specific description. When referring to a structure, the term does not refer to an infinitely thin structure but rather refers to a structure formed with substantially planar top and bottom surfaces, eg, top and bottom surfaces of each layer or continuously formed group. The layers of a structure formed using multi-material, multi-layer electrochemical fabrication methods, especially when each layer undergoes planarization processes such as lapping, fly cutting, chemical mechanical planarization, spreading by spinning, etc. during operation. In some cases, a substantially planar structure may also mean that the structure or elements of the structure are smaller in height or thickness compared to the dimensions of the structure in two vertical dimensions (i.e., the ratio of vertical footprint to thickness is greater than 25, preferably greater than 50, more preferably greater than 100, and most preferably greater than 200). If this term is used for a structure without clarification, it should be interpreted as meeting the substantially flat surface criteria of upper and lower surfaces. In some cases, a ratio requirement may also apply, i.e. a ratio of at least 25. When applied to a structure with a specific description, the term shall be construed in light of the specific description.

本文所用的“相對剛性”是指當兩個結構元件承受工作負載或應力時兩個結構元件之間的剛性比較，其中相對剛性的結構元件與另一個結構元件相比應經受較小的偏轉或變形至少2倍，更優選5倍，最優選10倍。如果該術語在沒有澄清的情況下用於結構元件，則應解釋為滿足2倍的要求。當用於具有具體說明的結構元素時，該術語應根據具體說明進行解釋。As used herein, "relative stiffness" refers to the comparison of stiffness between two structural elements when the two structural elements are subjected to operating loads or stresses, where the relatively stiff structural element should experience less deflection or The deformation is at least 2 times, more preferably 5 times, and most preferably 10 times. If this term is used for structural elements without clarification, it should be interpreted as meeting the 2x requirement. When applied to a structural element with a specific description, the term shall be interpreted in accordance with the specific description.

本文所用的“非線性配置”是指不是直條狀配置的配置，特別是當應用於實體結構或元件時。非線性配置是一種本質上是二維或三維的配置，其特徵包括一個或多個彎曲或曲線。例如，平面非線性結構可以是扁平螺旋結構。當提及彈簧時，如本文所使用的，非線性構造並不指代力-偏轉關係，除非具體且明確地指示這種關係。As used herein, "nonlinear configuration" refers to a configuration that is not a straight strip configuration, especially when applied to a solid structure or element. A nonlinear configuration is one that is two or three dimensional in nature and is characterized by one or more bends or curves. For example, a planar nonlinear structure may be a flat spiral structure. When referring to a spring, as used herein, nonlinear configuration does not refer to a force-deflection relationship unless such relationship is specifically and unambiguously indicated.

具有平面彈簧模塊的探針：Probe with flat spring module:

本發明的平面彈簧或平面順應元件可以以多種不同的方式形成並且採用多種不同的構造。一般而言，順應元件包括平面彈簧，其具有以懸臂或橋接方式從支座延伸到尖端或尖端臂的部分(例如，兩個或更多個彈簧從不同的側向支座位置開始並接合到共同的尖端臂-本文通常稱為一個或多個懸臂)，位於彈簧在正常操作期間可能偏轉的間隙或開放區域上。這些順應部分通常在橫向平面內具有二維非線性構造以及垂直於該平面(例如，在縱向方向上)延伸的厚度，其中二維構造可以是具有彎曲或彎曲的樑結構的形式。長度遠大於寬度的彎曲或成角度配置，例如，在一些變型中，至少5、10、20或甚至50倍或更多，其中厚度通常小於樑的長度，例如，在一些變型中，至少 5、10、20或甚至50倍或更多，或在一些變型中，彈簧元件的橫向尺寸，例如，2、5、10或甚至20倍或更多。在一些實施例中，當探針或模塊由多個粘附層(例如，X-Y平面)形成時，這種配置的平面可以平行於層平面。彈簧的厚度(例如，在Z方向上)可以是單層的厚度或者可以是多層的厚度。在一些實施例中，順應元件包括多個間隔開的平面彈簧元件。The planar springs or planar compliant elements of the present invention can be formed in many different ways and employ many different configurations. Generally, compliant elements include planar springs with portions extending from the base to the tip or tip arm in a cantilevered or bridging manner (e.g., two or more springs originating from different lateral base locations and joining to A common tip arm - generally referred to herein as one or more cantilever arms), is located over a gap or open area where the spring may deflect during normal operation. These compliant portions typically have a two-dimensional non-linear configuration in the transverse plane and a thickness extending perpendicular to the plane (eg, in the longitudinal direction), where the two-dimensional configuration may be in the form of a beam structure with bends or curves. A curved or angled configuration with a length much greater than the width, e.g., in some variations, at least 5, 10, 20, or even 50 times or more, where the thickness is generally less than the length of the beam, e.g., in some variations, at least 5, 10, 20 or even 50 times or more, or in some variations, 2, 5, 10 or even 20 times or more the lateral dimensions of the spring element. In some embodiments, when a probe or module is formed from multiple adhesive layers (eg, X-Y planes), the plane of such a configuration may be parallel to the layer plane. The thickness of the spring (eg, in the Z direction) may be the thickness of a single layer or may be the thickness of multiple layers. In some embodiments, the compliant element includes a plurality of spaced apart planar spring elements.

在一些實施例中，順應元件可包括平面彈簧元件，其不僅在支座或尖端結構處彼此連接，而且在此類端部元件中間的位置處連接。在一些這樣的實施例中，平面彈簧元件可以從一端(例如，支座或尖端臂)開始，作為具有相對高彈簧常數的一個或多個加厚彈簧，然後通過去除初始彈簧結構的頂部和底部之間的一些中間彈簧材料來提供減小的彈簧常數，使得開始時少量但厚的平面順應元件(例如1、2或3個元件)過渡到大量較薄的平面元件，其中有一些初始平面元件在到達另一端(例如支座的尖端臂)之前，分為2、3、4、5 或更多個平面但較薄的元件，藉此，例如彈簧常數、力要求、超程(overtravel)、應力、應變、載流容量、總體尺寸和其他操作參數可以定制以滿足給定應用的要求。In some embodiments, the compliant elements may include planar spring elements that are connected to each other not only at the abutment or tip structure, but also at locations intermediate such end elements. In some such embodiments, a planar spring element may be started at one end (e.g., a stand or tip arm) as one or more thickened springs with a relatively high spring constant and then removed by removing the top and bottom of the initial spring structure. some intermediate spring material in between to provide a decreasing spring constant such that starting with a small number but thick planar compliant elements (e.g. 1, 2 or 3 elements) transitions to a large number of thinner planar elements with some initially planar elements is divided into 2, 3, 4, 5 or more planar but thinner elements before reaching the other end (e.g. the tip arm of the support), whereby, for example, spring constant, force requirement, overtravel, Stress, strain, ampacity, overall dimensions and other operating parameters can be customized to meet the requirements of a given application.

參考標號包含在圖2至圖5H的許多圖中，其中相同的標號用於表示不同實施例中相似的結構或特徵。Reference numerals are included in many of the figures of FIGS. 2-5H, where the same numerals are used to refer to similar structures or features in different embodiments.

示例性彈簧模塊在圖2-3中示出。圖2描繪了示例性彈簧模塊200的等距視圖，其具有兩個未偏轉的彈簧元件221-1和221-2、與彈簧元件間隔開的一基座201、以及一連接支撐件(例如，支座或橋)211，其橋接彈簧元件和基座之間的縱向模塊間隙MG。在圖2的例子中，兩個彈簧元件中的每一個都採用平面徑向延伸螺旋的形式，該螺旋從徑向移位橋211經由尖端結構的向下延伸部分延伸到居中或軸向定位的尖端元件231。彈簧由間隙SG縱向分開。在該示例中，橋211將每個彈簧元件的一端連接在一起，而尖端元件231經由尖端結構的延伸部分將彈簧元件的另一端連接在一起。尖端元件231形成有在上彈簧上方延伸的期望寬度TW和期望尖端高度TH，並且每個彈簧元件形成有期望的材料、樑厚度或彈簧高度SH、樑寬度或彈簧寬度SW、彈簧線圈之間的間距CS和線圈樑長度，其允許彈簧偏轉期望量而不超過結構和形成彈簧的相關材料的彈性偏轉極限，同時在其偏轉範圍內提供期望的固定或可變彈簧力。特別地，尖端的長度可以使得模塊尖端朝向基座的所需壓縮能夠發生，而基座、橋接件和彈簧元件不會彼此干擾。在一些實施例中，例如，每個模塊的尖端的最大行進距離可以小至5um(um＝微米)或更小，或者多至500um(例如，25um、50um、100um或200um)或更多。例如，在一些實施例中，每個模塊的最大行進距離可以是25um至200um，而在其他示例實施例中，每個模塊的最大行進距離可以是50um至150um。在一些實施例中，尖端的最大行進距離可以通過硬止動(hard stop)來設定，例如通過與基座接觸的彈簧或尖端的偏轉部分、通過基座上的止動結構、或者可能通過接觸與橋的上部接觸的尖端(例如，相鄰模塊的表面)。在其他實施例中，最大行進距離可以通過與軟止動(soft stop)或順應減小結構接觸的順應彈簧或尖端部分逐漸施加。實現最大偏轉(或行程)的力可以小至0.1克力(gram force)，大至20或更大克力。在一些實施例中，0.5克的力目標可能是合適的。在其他情況下，1克、2克、4克、8克或更多可能是合適的。在一些實施例中，可以採用50μm或更小的模塊高度MH(縱向尺寸)為目標，而在其他實施例中，可以採用500μm或更大的模塊高度為目標。在一些實施例中，總模塊徑向直徑或寬度MW可以是100um或更小或者400um或更大(例如，150um、200um或250um)。模塊的彈簧樑元件或多個樑元件可具有從1um或更小到100um或更大(例如，10、20、30或40um)的彈簧高度SH以及樑寬度或彈簧寬度SW從1微米或更小到100微米或更大(例如，10、20、30或40微米)。尖端可以具有統一的或變化的幾何形狀(例如，具有圓柱形、矩形、圓錐形、多尖頭或其他構造或構造的組合)。當連接到彈簧樑時，尖端通常具有比它們所連接的一個或多個樑的寬度SW更大的橫截面寬度TW。An exemplary spring module is shown in Figures 2-3. Figure 2 depicts an isometric view of an exemplary spring module 200 having two undeflected spring elements 221-1 and 221-2, a base 201 spaced apart from the spring elements, and a connection support (eg, Bearing or bridge) 211, which bridges the longitudinal module gap MG between the spring element and the base. In the example of Figure 2, each of the two spring elements takes the form of a planar radially extending helix extending from the radially displaced bridge 211 via the downwardly extending portion of the tip structure to a centrally or axially positioned Tip element 231. The springs are separated longitudinally by gaps SG. In this example, bridge 211 connects one end of each spring element together, while tip element 231 connects the other end of the spring elements together via an extension of the tip structure. The tip elements 231 are formed with a desired width TW and a desired tip height TH extending over the upper spring, and each spring element is formed with a desired material, beam thickness or spring height SH, beam width or spring width SW, between spring coils A spacing CS and a coil beam length that allows the spring to deflect a desired amount without exceeding the elastic deflection limits of the structure and associated materials forming the spring, while providing the desired fixed or variable spring force over its deflection range. In particular, the length of the tip can be such that the required compression of the module tip towards the base can occur without the base, bridge and spring element interfering with each other. In some embodiments, for example, the maximum travel distance of the tip of each module may be as little as 5um (um = micrometers) or less, or as much as 500um (eg, 25um, 50um, 100um, or 200um) or more. For example, in some embodiments, the maximum travel distance of each module may be 25um to 200um, while in other example embodiments, the maximum travel distance of each module may be 50um to 150um. In some embodiments, the maximum travel distance of the tip may be set by a hard stop, such as by a spring or deflection portion of the tip in contact with the base, by a stop structure on the base, or possibly by contact The tip in contact with the upper part of the bridge (e.g., the surface of the adjacent module). In other embodiments, the maximum travel distance may be imposed gradually by a compliant spring or tip portion in contact with a soft stop or compliance reducing structure. The force required to achieve maximum deflection (or travel) can be as small as 0.1 gram force to as large as 20 or more gram force. In some embodiments, a force target of 0.5 grams may be appropriate. In other cases, 1 gram, 2 grams, 4 grams, 8 grams or more may be appropriate. In some embodiments, a module height MH (longitudinal dimension) of 50 μm or less may be targeted, while in other embodiments a module height of 500 μm or greater may be targeted. In some embodiments, the total module radial diameter or width MW may be 100um or less or 400um or greater (eg, 150um, 200um or 250um). The spring beam element or beam elements of the module may have a spring height SH from 1 um or less to 100 um or more (eg, 10, 20, 30 or 40 um) and a beam width or spring width SW from 1 micron or less to 100 microns or larger (e.g., 10, 20, 30, or 40 microns). The tips may have uniform or varying geometries (eg, have a cylindrical, rectangular, conical, multi-pronged, or other configuration or combination of configurations). When connected to spring beams, the tips typically have a greater cross-sectional width TW than the width SW of the beam or beams to which they are connected.

圖3描繪了第二示例性彈簧模塊300的等距視圖，其類似於圖2的模，不同之處在於兩個彈簧元件更厚，因此提供比圖2的元件更大的彈簧常數。從另一個角度來看，圖3的例子對於給定的偏轉需要更大的力，因此，將以比圖2的示例更小的偏轉達到組合材料和結構幾何形狀的屈服強度(例如，達到彈性偏轉極限)。FIG. 3 depicts an isometric view of a second exemplary spring module 300, which is similar to the mold of FIG. 2, except that the two spring elements are thicker, thus providing a greater spring constant than the elements of FIG. 2. Viewed from another perspective, the example of Figure 3 requires a greater force for a given deflection and, therefore, the yield strength of the combined material and structural geometry will be reached (e.g., the elasticity is reached) with a smaller deflection than the example of Figure 2 deflection limit).

在其他實施例中，彈簧模塊可以採用與圖2或圖3所示的不同的形式。例如： (1)模塊可以具有單個彈簧元件或兩個以上的彈簧元件；(2)每個彈簧元件可以在寬度、厚度、長度或旋轉程度中的一個或多個方面具有變化；(3) 彈簧元件可以隨元件的長度變化；(4) 彈簧元件可以具有歐拉(Euler)螺旋以外的結構，例如矩形螺旋、圓角矩形螺旋、S形結構或C形結構；(5) 各個彈簧元件可以連接到一個以上的橋接點，例如橋接連接點位於模塊周圍 180 度、120 度或 90 度；(6) 橋接點可以位於不同的橋樑上； (7) 基座元件可以具有比彈簧/橋接點更小的徑向範圍，使得當模塊堆疊時，當模塊尖端被充分壓縮時，較高模塊的基座可以延伸到下部相鄰模塊的上部範圍之下；(8) 模塊基座可以用額外的彈簧代替，這些彈簧允許在偏轉時從兩個方向壓縮模塊彈簧，(9) 探針尖端可能不會相對於模塊的整體橫向配置橫向居中(即，當逐層形成時，與壓縮主軸或主構建軸不重合或甚至共線)。In other embodiments, the spring module may take a different form than that shown in Figure 2 or Figure 3. For example: (1) A module can have a single spring element or more than two spring elements; (2) Each spring element can vary in one or more aspects of width, thickness, length, or degree of rotation; (3) Spring The element can vary with the length of the element; (4) The spring element can have structures other than Euler spirals, such as rectangular spiral, rounded rectangular spiral, S-shaped structure or C-shaped structure; (5) Individual spring elements can be connected to more than one bridge point, for example the bridge connection point is located at 180, 120 or 90 degrees around the module; (6) the bridge points can be on different bridges; (7) the base element can have a smaller spring/bridge point than radial extent so that when modules are stacked, the base of the higher module can extend below the upper extent of the lower adjacent module when the module tip is fully compressed; (8) the module base can be replaced with an additional spring , these springs allow the module springs to be compressed in both directions upon deflection, (9) the probe tip may not be laterally centered relative to the overall lateral configuration of the module (i.e., not aligned with the compression spindle or the main build axis when formed layer by layer) coincident or even collinear).

圖4A-4D4提供了探針3400或這種探針的部分的各種視圖，其中探針由兩個背對背(或基座對基座)模塊形成，其中這兩個模塊共享一個具有環形配置的公共基座，並且探針具有許多不同的特徵：(1)環形基座或框架3401，其通過其最外側的橫向範圍固定上螺旋彈簧陣列3421-UC和下螺旋彈簧陣列3421-LC以提供基本間隔上彈簧陣列和下彈簧陣列之間的功能，其中基座或框架3401具有帶內部開口的圓形外部，其具有相對的弓形(arcuate)側面3401-A和較窄的相對平坦側面3401-F，其中連接平坦側面的上表面和下表面提供附接區域用於與上部和下支撐件或支座3411-1、3411-2、3412-1和3412-2連接，其依次支撐螺旋彈簧元件的端部，同時弓形區域提供間隙，彈簧的最外懸臂部分在該間隙上可以駐留(在變形之前)，其中基座的厚度充當隔離墊片，其中螺旋彈簧的部分可以在探針尖端彼此壓縮期間偏轉；(2)上彈簧陣列和下彈簧陣列中的每一個從相對的支座對開始其向內路徑，作為兩對縱向分離的共面纏繞螺旋懸臂3421-1U 和 3421-2U 位於基座上方，螺旋懸臂3421-1L 和 3421-2L 位於基座下方，每個元件的每個懸臂在其向內的行程中途分為兩個縱向間隔的懸臂，使得四個上懸臂元件UC1-UC4連接上尖端臂3431-UA的每一側，而四個下懸臂元件LC1-LC4連接下尖端臂3431-LA的任一側，其進而分別支撐接觸或接合尖端3431-U 和 3431-L；(3)連接上接觸尖端的螺旋彈簧元件的旋轉方向相對於連接下接觸尖端的螺旋彈簧元件具有相反的旋轉方向；(4)支座3411-1、3411-2、3412-1和3412-2僅提供上螺旋陣列的多個樑之間以及下螺旋陣列的多個螺旋樑之間的中間支座功能，但不提供位於兩個彈簧組之間的支座功能，因為該功能由基座 3401直接提供。Figures 4A-4D4 provide various views of a probe 3400, or portions of such a probe, where the probe is formed from two back-to-back (or base-to-base) modules, where the two modules share a common ring configuration. base, and the probe has a number of different features: (1) annular base or frame 3401, which secures upper and lower coil spring arrays 3421-UC and 3421-LC by their outermost lateral extent to provide substantial spacing function between an upper spring array and a lower spring array, wherein the base or frame 3401 has a rounded exterior with an internal opening, having opposite arcuate sides 3401-A and narrower opposite flat sides 3401-F, Where the upper and lower surfaces connecting the flat sides provide attachment areas for connection to upper and lower supports or seats 3411-1, 3411-2, 3412-1 and 3412-2, which in turn support the ends of the coil spring elements portion, while the arcuate region provides a gap upon which the outermost cantilevered portion of the spring can reside (before deforming), where the thickness of the base acts as an isolation shim, and where portions of the coiled spring can deflect during compression of the probe tips against each other ;(2) Each of the upper and lower spring arrays begins its inward path from an opposing pair of supports as two pairs of longitudinally separated coplanar wound spiral cantilevers 3421-1U and 3421-2U located above the base, Helical cantilever arms 3421-1L and 3421-2L are located below the base, each element of each cantilever splits into two longitudinally spaced cantilevers midway through its inward stroke, such that the four upper cantilever elements UC1-UC4 connect to the upper tip arm 3431-UA on each side, while four lower cantilever elements LC1-LC4 connect either side of the lower tip arm 3431-LA, which in turn support the contact or engagement tips 3431-U and 3431-L respectively; (3) Connect the upper The rotation direction of the coil spring element of the contact tip is opposite to the rotation direction of the coil spring element connected to the lower contact tip; (4) Supports 3411-1, 3411-2, 3412-1 and 3412-2 only provide upper spiral arrays The intermediate support function between the multiple beams and the multiple spiral beams of the lower spiral array, but does not provide the support function between the two spring groups, because this function is directly provided by the base 3401.

圖4A、4B1和4B2分別提供了探針3400的側視圖、上等距視圖和下等距視圖，其中可以看到探針的不同特徵。圖4B1提供了探針的上彈簧部分的最上面一對螺旋彈簧的視圖，而圖4B2提供了探針的下部彈簧部分的最下面一對螺旋彈簧的視圖。每一圖4A、4B1和4B2提供了上尖端3431-U和下尖端3431-L以及中心基座3401的視圖。圖4A、4B1和4B2還提供上支座3411-1和3411-2以及下支座3412-1和3412-2的視圖，以及縱向分離的上懸臂元件3421-1U和3421-1U的外部的視圖。還可以看到成對的共面懸臂元件的交錯路徑從它們各自的支座向內傳播以在它們各自的中心尖端處相遇。Figures 4A, 4B1, and 4B2 provide side, upper, and lower isometric views, respectively, of probe 3400, in which different features of the probe can be seen. Figure 4B1 provides a view of the uppermost pair of coil springs of the upper spring portion of the probe, while Figure 4B2 provides a view of the lowermost pair of coil springs of the lower spring portion of the probe. Each of Figures 4A, 4B1, and 4B2 provides a view of upper tip 3431-U and lower tip 3431-L as well as center base 3401. Figures 4A, 4B1 and 4B2 also provide views of upper supports 3411-1 and 3411-2 and lower supports 3412-1 and 3412-2, as well as views of the exterior of longitudinally separated upper cantilever elements 3421-1U and 3421-1U . The staggered paths of pairs of coplanar cantilever elements can also be seen propagating inward from their respective supports to meet at their respective central tips.

圖4C1和4C2分別提供了從上透視圖和下透視圖來看的探針3400的分解等距視圖，使得不僅可以看到下懸臂元件的底部和上懸臂元件的頂部，而且還可以看到下懸臂元件的頂部和上懸臂元件的底部，以及包括平坦和弓形側壁3401-F和3401-A的環形基座3401的內部。在圖4C1和4C2中，探針的上彈簧部分或上順應元件3421-UC與中心框架或基座元件3401分離，中心框架或基座元件3401又與探針的下彈簧部分或下順應元件3421-LC分離。上尖端3431-U可以在圖4C1中看到，連同上彈簧部分和下彈簧部分的頂部以及中央框架元件的頂部。下尖端3431-L：可以在圖4C2中看到，連同上彈簧部分3421-UC和下彈簧部分3421-LC的底部以及中心框架元件3401的底部。如連接分解元件的虛線所示，中心框架元件3401支撐上彈簧部分和下彈簧部分的最外面橫向範圍，並且更具體地，支撐這些懸臂元件的支座3411-1、3411-2、3412-1和3412-2。Figures 4C1 and 4C2 provide exploded isometric views of the probe 3400 from an upper perspective and a lower perspective, respectively, such that not only the bottom of the lower cantilever element and the top of the upper cantilever element can be seen, but also the lower cantilever element can be seen. The top of the cantilever element and the bottom of the upper cantilever element, and the interior of the annular base 3401 including flat and arcuate side walls 3401-F and 3401-A. In Figures 4C1 and 4C2, the upper spring portion or upper compliant element 3421-UC of the probe is separated from the central frame or base element 3401, which in turn is separated from the lower spring portion or lower compliant element 3421 of the probe. -LC separation. The upper tip 3431-U can be seen in Figure 4C1, along with the tops of the upper and lower spring portions and the top of the central frame element. Lower tip 3431-L: can be seen in Figure 4C2, together with the bottom of the upper spring portion 3421-UC and the lower spring portion 3421-LC and the bottom of the central frame element 3401. As shown by the dashed lines connecting the exploded elements, the central frame element 3401 supports the outermost lateral extents of the upper and lower spring sections and, more specifically, the supports 3411-1, 3411-2, 3412-1 of these cantilever elements. and 3412-2.

圖4D1-4D4提供了探針3400的四個不同的剖視圖，其中探針側面的逐漸變大的部分被切除，以便揭示探針的內部結構，使得可以更容易地看到和理解懸臂變化。當螺旋元件朝橫向居中的尖端元件向內旋轉時，懸臂元件經歷轉變，由基座3401上方的兩個縱向分離的懸臂元件3421-2U和3421-1U以及基座3401下方的兩個縱向分離的懸臂元件3421-1L和3421-2L，到基座上方的四個縱向分離的懸臂元件 UC1-UC4 和基座下方的四個縱向分離的元件LC1-LC4，其依次連接或分別成為尖端3431-U和3431-L。Figures 4D1-4D4 provide four different cross-sectional views of the probe 3400 in which progressively larger portions of the sides of the probe are cut away to reveal the internal structure of the probe so that cantilever changes can be more easily seen and understood. As the helical element rotates inwardly towards the laterally centered tip element, the cantilever elements undergo a transformation, consisting of two longitudinally separated cantilever elements 3421-2U and 3421-1U above the base 3401 and two longitudinally separated cantilever elements 3421-2U and 3421-1U below the base 3401. Cantilever elements 3421-1L and 3421-2L, to four longitudinally separated cantilever elements UC1-UC4 above the base and four longitudinally separated elements LC1-LC4 below the base, which in turn are connected or respectively become tips 3431-U and 3431-L.

圖4E1提供類似於圖4A的探針3400的側視圖，但是具有17個樣本層級別L1至L17，其中每個層具有沿著探針的縱軸(即，如圖所示的Z軸)的所識別的厚度，可以通過例如多層製造來製造探針，例如使用單一或多種結構材料(連同犧牲材料)並使用對應於探針縱軸的構建軸或層堆疊軸的多層、多材料電化學製造過程。在這樣的形成實施例中，儘管可以一次形成一個探針，但是通常優選的是通過連續的層上層(layer-upon-layer)構建同時形成數百個甚至數千個探針來批量形成探針。Figure 4E1 provides a side view of probe 3400 similar to Figure 4A, but with 17 sample layer levels L1 through L17, where each layer has a With the thickness identified, the probe can be fabricated, for example, by multi-layer fabrication, such as multi-layer, multi-material electrochemical fabrication using single or multiple structural materials (along with sacrificial materials) and using a build axis or layer stacking axis corresponding to the longitudinal axis of the probe. Process. In such formation embodiments, although the probes may be formed one at a time, it is generally preferred to batch form the probes by forming hundreds or even thousands of probes simultaneously through a sequential layer-upon-layer build. .

圖4E2-A至4E9-B示出了層L1-L17的八種獨特配置的俯視圖(-A圖)和等距視圖(-B圖)中所示的橫截面配置。Figures 4E2-A to 4E9-B illustrate cross-sectional configurations shown in top view (panel -A) and isometric view (panel -B) of eight unique configurations of layers L1 -L17.

圖4E2-A和4E2-B示出了層L1和L17的視圖，其中可以看到尖端，該尖端是L1的下尖端3431-L和層L17的上尖端3431-U。Figures 4E2-A and 4E2-B show views of layers L1 and L17 in which the tips are visible, which are the lower tip 3431-L of L1 and the upper tip 3431-U of layer L17.

圖4E3-A和4E3-B示出了L2、L4、L6和L8的視圖，其提供了平面彈簧螺旋3421-1L、3421-2L的部分以及它們形成懸臂部分LC1至LC4(未標記)的最內部區域，下中央尖端臂3431-LA的部分以及下支座3412-1和3412-2的部分，其中可以看到雙交錯的螺旋構造。Figures 4E3-A and 4E3-B show views of L2, L4, L6 and L8 providing portions of planar spring helices 3421-1L, 3421-2L and their final portions forming cantilever portions LC1 to LC4 (not labeled). The inner region, portions of the lower central tip arm 3431-LA and portions of the lower supports 3412-1 and 3412-2, where a double staggered helical configuration can be seen.

圖4E4-A和4E4-B示出了L3和L7的視圖，其中不完整的螺旋元件3421-1L、3421-2L以及支座3412-1和3412-2(類似於圖4E3-A和4E3- B的特徵，但是LC1-LC4 部分缺漏)。這些圖中反映的螺旋部分，結合圖4E3-A和圖4E3-B的覆蓋和下面部分，在彈簧的最外側部分形成加厚的螺旋部分，其中下順應元件3421-LC僅包括兩個加厚的懸臂元件，相反於將尖端臂連接到彈簧的最內側部分的四個更薄的懸臂元件 LC1-LC4。Figures 4E4-A and 4E4-B show views of L3 and L7 with incomplete helical elements 3421-1L, 3421-2L and supports 3412-1 and 3412-2 (similar to Figures 4E3-A and 4E3- Characteristics of B, but LC1-LC4 are missing). The helical portions reflected in these figures, combined with the overlying and lower portions of Figures 4E3-A and 4E3-B, form a thickened helical portion at the outermost portion of the spring, where the lower compliant element 3421-LC includes only two thickenings of cantilever elements, as opposed to the four thinner cantilever elements LC1-LC4 that connect the tip arm to the innermost part of the spring.

圖4E5-A和4E5-B示出L5的視圖，其包括下尖端臂3431-LA的一部分以及支座3412-1和3412-2的部分，提供了 3421-1L 和 3421-2L 懸臂彈簧部分之間的連接。Figures 4E5-A and 4E5-B show views of L5 including a portion of lower tip arm 3431-LA and portions of supports 3412-1 and 3412-2, providing between 3421-1L and 3421-2L cantilever spring portions. connections between.

圖4E6-A和4E6-B示出了L9的視圖，其包括環形基座3401，該基座3401通過充當支座的基座的兩個部分來分隔和連接上部和下順應元件3421-UC和3421-LC，其中基座的一些橫向部分基座在其支座區域3411-1、3411-2、3412-1和3412-2中與彈簧對齊並接合。探針3400的向內旋轉螺旋的實際開始取決於L8的特徵如何與L9的特徵界接，以及同樣地，L9的特徵如何與L10的特徵界接。具體地，界面不垂直於纏繞螺旋的局部長度(例如，提供最小寬度界面)，而是以一定角度形成，使得與基座界接的螺旋樑的外部部分是沿其長度的支撐量與內部部分的支撐量不同。在一些變型中，界面可以以這樣的方式提供，使得界面垂直於樑的局部長度提供，使得由基座(或其他支座區域)提供的支撐在受支撐樑和無支樑區域之間提供橫向垂直或基本垂直的過渡。具體地，在其他樑中提供垂直過渡以隔離區域，如可見於L4和L5、L5和L6、L12和L13以及L13和L14形成的界面以及其他樑分離區域，諸如L2到L3、L3至L4、L6至L7、L7至L8、L10至L11、L11至L12、L14至L15以及L15至L16，其中樑過渡沿實質垂直於樑的直接長度或局部長度的側線延伸。這種垂直界面和非垂直界面以及它們一致或變化的用途可以用於定制探針性能或操作特性。特別地，由於與基座的非垂直界面以及由於懸臂的其他樑提供的界面以及懸臂的其他樑之間的界面，懸臂的外部部分被提供為單個厚樑，而懸臂結構的內部部分開始為兩根中等厚度的樑，探針臂處的懸臂末端為四根較薄的樑。在一些變型中，初始懸臂結構(當它們橫向地離開基座時)可以開始為單個厚樑或遍及其寬度的多個樑。沿著樑長度的其他過渡也可以被設置為提供整齊的或垂直的過渡，或者可以被設置為提供可變的或非垂直的過渡。圖4E7-A和4E7-B示出L10、L12、L14和L16的視圖，其提供(1)上平面彈簧螺旋3421-1U和3421-2U的部分以及它們形成懸臂部分UC1至UC4(未標記)的最內延伸部，(2)上中心尖端臂3431-UA的部分，以及上支座3411-1和3411-2的部分，其中可以看到雙交錯的螺旋構造。這些是與圖4E3-A和4E3-B中所示的下順應元件特徵相對應的上順應元件。這些圖的比較表明，上順應元件和下順應元件的螺旋的旋轉方向具有相反的旋轉方向。這種方向的逆轉在某些情況下可能被認為是有益的，而在其他情況下則被認為是不必要的甚至是有害的。當壓縮彈簧元件時，尖端可能傾向於沿與螺旋元件向內旋轉相反的方向旋轉，這可能導致擦洗(scrubbing)或刮擦(scraping)效果，這可能有助於突破氧化物塗層或對所接觸的表面造成損壞。下探針尖端和上探針尖端之間的擦洗方向的反轉可能是期望的，也可能不是期望的，因此可以在初始探針設計期間予以考慮。類似地，分離的上彈簧元件的相對取向的反轉是可能的，並且分離的下彈簧元件的相對取向的反轉也是可能的。Figures 4E6-A and 4E6-B show views of L9, which includes an annular base 3401 that separates and connects the upper and lower compliant elements 3421-UC and 3421-LC in which some lateral portions of the base are aligned and engaged with springs in their seating areas 3411-1, 3411-2, 3412-1 and 3412-2. The actual onset of the inwardly rotating spiral of probe 3400 depends on how the features of L8 interface with the features of L9, and likewise, how the features of L9 interface with the features of L10. Specifically, the interface is not perpendicular to the local length of the winding helix (e.g., providing a minimum width interface), but is formed at an angle such that the outer portion of the helical beam that interfaces with the base is the same amount of support along its length as the inner portion The amount of support is different. In some variations, the interface may be provided in such a way that the interface is provided perpendicular to the local length of the beam such that the support provided by the base (or other support area) provides transverse direction between the supported and unsupported beam areas. A vertical or nearly vertical transition. Specifically, vertical transitions are provided in other beams to isolate regions, as can be seen at the interfaces formed by L4 and L5, L5 and L6, L12 and L13, and L13 and L14, as well as other beam separation regions, such as L2 to L3, L3 to L4, L6 to L7, L7 to L8, L10 to L11, L11 to L12, L14 to L15, and L15 to L16, where the beam transitions extend along lateral lines substantially perpendicular to the direct or partial length of the beam. Such vertical and non-vertical interfaces and their consistent or varying uses can be used to tailor probe performance or operating characteristics. In particular, the outer part of the cantilever is provided as a single thick beam, while the inner part of the cantilever structure starts as two One medium-thickness beam and the cantilever end at the probe arm are four thinner beams. In some variations, the initial cantilever structures (as they move laterally away from the base) may begin as a single thick beam or as multiple beams across its width. Other transitions along the length of the beam may also be arranged to provide neat or vertical transitions, or may be arranged to provide variable or non-vertical transitions. Figures 4E7-A and 4E7-B show views of L10, L12, L14 and L16 providing (1) the portions of the upper planar spring coils 3421-1U and 3421-2U and the cantilever portions UC1 to UC4 they form (not labeled) The innermost extension of (2) the portion of the upper central tip arm 3431-UA, and the portions of the upper supports 3411-1 and 3411-2, where a double staggered helical configuration can be seen. These are upper compliant elements that correspond to the features of the lower compliant elements shown in Figures 4E3-A and 4E3-B. Comparison of these figures shows that the directions of rotation of the helices of the upper and lower compliant elements have opposite directions of rotation. This reversal of direction may be considered beneficial in some situations and unnecessary or even harmful in others. When the spring element is compressed, the tip may tend to rotate in the opposite direction to the inward rotation of the helical element, which may result in a scrubbing or scraping effect, which may help break through the oxide coating or cause damage to all Damage to the surface in contact. Reversal of the scrubbing direction between the lower and upper probe tips may or may not be desired and therefore can be considered during initial probe design. Similarly, reversal of the relative orientation of separate upper spring elements is possible, and reversal of the relative orientation of separate lower spring elements is also possible.

圖4E8-A和4E8-B示出了層L11和L15的視圖，其中可以看到不完整的螺旋元件3421-1U和3421-2U以及支座3411-1和3411-2的連接區域，而圖4E7-A和4E7-B的螺旋的橋接部分在彈簧的最外側部分形成加厚的螺旋部分，其中上順應元件3421-UC 僅包括兩個加厚元件，而不是四個較薄元件，其在螺旋的最內側區域處連接尖端臂3431-UA。圖4E8-A和圖4E8-B提供了與圖4E4-A和4E4-B所示的下順應元件相互補的上順應元件。Figures 4E8-A and 4E8-B show views of layers L11 and L15, in which the incomplete helical elements 3421-1U and 3421-2U and the connection areas of the supports 3411-1 and 3411-2 can be seen, while Figs. The bridging portion of the helices of the 4E7-A and 4E7-B forms a thickened helical portion at the outermost portion of the spring, where the upper compliant element 3421-UC includes only two thickened elements instead of four thinner elements, which are The innermost region of the spiral is connected to tip arm 3431-UA. Figures 4E8-A and 4E8-B provide upper compliant elements that are complementary to the lower compliant elements shown in Figures 4E4-A and 4E4-B.

圖4E9-A和4E9-B示出了層L13的視圖，層L13包括上尖端臂3431-UA的一部分以及在懸臂3421-1U和3421-2U之間提供連接的支座3411-1和3411-2的部分。圖4E9-A和4E9-B提供了與圖4E5-A和4E5-B中發現的下順應元件互補物互補的上順應元件的部分的圖像。Figures 4E9-A and 4E9-B show views of layer L13 including a portion of upper tip arm 3431-UA and supports 3411-1 and 3411- providing connections between cantilevers 3421-1U and 3421-2U. Part 2. Figures 4E9-A and 4E9-B provide images of portions of an upper compliant element that are complementary to the complement of the lower compliant element found in Figures 4E5-A and 4E5-B.

圖4A~4E9-B的探針的許多其他變體是可能的，並且在審閱本文的教導後對於本領域技術人員來說將是顯而易見的，並且包括例如：(1) 材料的變化；(2) 配置的變化，包括每個彈簧元件所包含的旋轉或部分旋轉的數量、在每個縱向水平處使用的交錯彈簧的數量、使用的縱向間隔彈簧的數量(例如偶數、奇數等)、沿螺旋長度發生的縱樑過渡的數量和位置、連續螺旋所採取的旋轉方向(例如CW-CCW-CW-CCW-CW、CW-CCW-CCW -CCW-CW等)、尖端形狀、懸臂樑的寬度和厚度；(3)使用將上彈簧模塊和下彈簧模塊之一或兩者與環形框架隔開的支座；(4) 使用更靠近探針中心部分而不是探針外周的支座；(5) 使用不同類型的框架或基礎結構及/或此類框架和基礎結構中的開口；(6)使用的彈簧結構不是由不同支座支撐的成對共面交錯螺旋，而是在給定縱向水平上為單個螺旋或在給定縱向水平上為兩個以上交錯螺旋；以及(7)從本文闡述的其他實施例和方面的特徵以及它們的變型中獲得的變型。Many other variations of the probes of Figures 4A-4E9-B are possible and will be apparent to those skilled in the art upon review of the teachings herein, and include, for example: (1) changes in materials; (2) ) variations in configuration, including the number of revolutions or partial revolutions contained in each spring element, the number of staggered springs used at each longitudinal level, the number of longitudinally spaced springs used (e.g. even, odd, etc.), the number of springs used along the spiral The number and location of stringer transitions in length, the direction of rotation taken by the continuous spiral (e.g. CW-CCW-CW-CCW-CW, CW-CCW-CCW-CCW-CW, etc.), tip shape, cantilever beam width and thickness; (3) Use supports that separate one or both of the upper and lower spring modules from the annular frame; (4) Use supports closer to the center portion of the probe than to the periphery of the probe; (5) The use of different types of frames or foundation structures and/or openings in such frames and foundation structures; (6) The use of spring structures that are not pairs of coplanar interleaved spirals supported by different supports, but at a given longitudinal level Be a single helix or be more than two staggered helices at a given longitudinal level; and (7) Variations derived from features of other embodiments and aspects and variations thereof set forth herein.

圖5A1-5H示出了根據本發明實施例的示例探針3500以及雙陣列板安裝和保持配置，其使用橫向滑動鎖或凸片3502和保持環或環形基座3501與兩個陣列板3540-L和3540-U的組合。5A1-5H illustrate an example probe 3500 and dual array plate mounting and retention configuration using a transverse sliding lock or tab 3502 and a retaining ring or annular base 3501 with two array plates 3540- Combination of L and 3540-U.

圖5A1和5A2提供了根據本發明實施例的示例性探針3500的等距視圖，分別從上方和從下方，其中探針包括探針主體3504 (例如探針的不包括橫向延伸外圍特徵的部分，例如其主要目的是安裝或對準的結構)、安裝環、止動環或基座3501，用於接合下接合板或下陣列板3540-L中的圓形通孔或下板探針孔3541-C的頂部邊緣周界，以及探針3500右側上的滑動夾或凸片3502，用於接合上陣列板3540-U中的橢圓形通孔3541-O的右上邊緣區域。以雙重方式，滑動夾子或凸片3502可以設置在探針3500的左側，用於接合上陣列板3540-U中的橢圓形通孔3541-O的左上邊緣區域。5A1 and 5A2 provide isometric views, respectively from above and from below, of an exemplary probe 3500 in accordance with embodiments of the present invention, wherein the probe includes a probe body 3504 (e.g., a portion of the probe that does not include laterally extending peripheral features , such as a structure whose primary purpose is mounting or alignment), mounting ring, stop ring, or base 3501 for engaging a circular through hole or lower plate probe hole in the lower bonding plate or lower array plate 3540-L 3541-C's top edge perimeter, and a sliding clip or tab 3502 on the right side of probe 3500 for engaging the upper right edge area of oval through hole 3541-O in upper array board 3540-U. In a dual fashion, a sliding clip or tab 3502 may be provided on the left side of the probe 3500 for engaging the upper left edge region of the oval through hole 3541-O in the upper array board 3540-U.

探針3500包括順應結構，其包括具有縱向分離的第一端和第二端的支座，第一順應元件3500-U，包括二維實質平面的彈簧3521-U，以及包括彈簧3521-L的第二順應元件3500-L。或者，第一順應元件3500-U和第二順應元件3500-L均包括相應的二維實質平面的彈簧。The probe 3500 includes a compliant structure including a support having longitudinally separated first and second ends, a first compliant element 3500-U including a two-dimensional substantially planar spring 3521-U, and a third compliant element including a spring 3521-L. Two compliant elements 3500-L. Alternatively, the first compliant element 3500-U and the second compliant element 3500-L each include respective two-dimensional substantially planar springs.

更具體地，第一順應元件3500-U在實質垂直於平面構造的方向上提供順應性，其中第一順應元件的第一部分功能性地連接至少一個支座，並且第一順應元件的第二部分功能性地連接第一尖端臂，其可以相對於至少一個支座彈性移動，其中，當第一順應元件未被偏置時，第一尖端臂直接或間接地保持第一尖端3531-U，其縱向延伸超過至少一個支座的第一端。More specifically, first compliant element 3500-U provides compliance in a direction substantially perpendicular to the planar configuration, wherein a first portion of the first compliant element functionally connects the at least one support, and a second portion of the first compliant element Functionally connected to a first tip arm that is resiliently movable relative to the at least one support, wherein the first tip arm directly or indirectly retains the first tip 3531-U when the first compliant element is not biased, which Extending longitudinally beyond the first end of at least one support.

此外，第二順應元件3500-L在實質垂直於平面配置的方向上提供順應性，其中第二順應元件的第一部分功能性地連接至少一個支座，並且第二順應元件的第二部分功能性地連接第二尖端臂，其可以相對於至少一個支座彈性移動，其中，當第二順從元件未被偏壓時，第二尖端臂直接或間接地保持第二尖端3531-L，其縱向延伸超過至少一個支座的第二端。Additionally, the second compliant element 3500-L provides compliance in a direction substantially perpendicular to the planar configuration, wherein a first portion of the second compliant element functionally connects the at least one support, and a second portion of the second compliant element functionally Groundly connected to a second tip arm that is resiliently movable relative to the at least one support, wherein when the second compliant element is not biased, the second tip arm directly or indirectly retains the second tip 3531-L, which extends longitudinally beyond the second end of at least one support.

圖5B1和5B2分別提供下陣列板3540-L部分的等距視圖和俯視圖，示出單個下板探針孔，特別是單個圓形通孔3541-C，圖5A1和5A2的探針3500的下部部分可通過此而***。Figures 5B1 and 5B2 provide isometric and top views, respectively, of portions of the lower array board 3540-L showing a single lower board probe hole, specifically a single circular through hole 3541-C, the lower portion of the probe 3500 of Figures 5A1 and 5A2 Sections can be inserted through this.

圖5C1和5C2分別提供了上陣列板3540-U部分的等距視圖和俯視圖，示了單個上板探針孔，特別是單個橢圓形通孔 3541-O，圖5A1和5A2的探針3500的上部通過此可縱向***然後橫向移位，使得設置在探針3500的一側上的滑動夾子或凸片3502將接合橢圓形通孔3541-O的上邊緣區域。Figures 5C1 and 5C2 provide isometric and top views of portions of the upper array board 3540-U, respectively, illustrating a single upper board probe hole, specifically a single oval through hole 3541-O, of the probe 3500 of Figures 5A1 and 5A2 The upper portion can be inserted longitudinally through this and then laterally displaced so that a sliding clip or tab 3502 provided on one side of the probe 3500 will engage the upper edge area of the oval through hole 3541-O.

圖5D提供圖5A1和5A2的探針3500的等距視圖，橫向對齊在圖5B1和5B2的下陣列板3540-L部分的圓形通孔3541-C上方，藉由沿箭頭3545所示的方向相對移動探針3500，以準備將探針3500相對縱向移動或裝載到下陣列板3540-L中的圓形通孔3541-C中。5D provides an isometric view of the probe 3500 of FIGS. 5A1 and 5A2, laterally aligned above the circular through hole 3541-C of the lower array plate 3540-L portion of FIGS. 5B1 and 5B2, by moving in the direction indicated by arrow 3545. The probe 3500 is relatively moved in preparation for relatively longitudinal movement or loading of the probe 3500 into the circular through hole 3541-C in the lower array plate 3540-L.

圖5E提供了圖5A1和5A2、5B1和5B及5D的探針3500和下陣列板3540-L部分的等距視圖，在將探針 3500 縱向加載到下陣列板 3540-L 中的圓形通孔或開口 3541-C 中之後，使得探針3500的保持環3501靠在下陣列板3540-L的上表面上，並且通過探針直徑和下陣列板3540-L中的圓形通孔3541-C的直徑的適當尺寸和公差設置，使得探針3500和下陣列板3540-L的橫向對準可保持。以這種方式，保持環3501充當探針3500的下保持特徵，被配置為至少接合功率陣列板3540-L。Figure 5E provides an isometric view of the probe 3500 and lower array plate 3540-L portion of Figures 5A1 and 5A2, 5B1 and 5B, and 5D, with the probe 3500 longitudinally loaded into the circular passage in the lower array plate 3540-L. After opening 3541-C in the hole or opening 3541-C, the retaining ring 3501 of the probe 3500 is placed against the upper surface of the lower array plate 3540-L and passed through the diameter of the probe and the circular through hole 3541-C in the lower array plate 3540-L. The diameter of the probe is appropriately sized and toleranced so that the lateral alignment of the probe 3500 and the lower array plate 3540-L is maintained. In this manner, retention ring 3501 acts as a lower retention feature of probe 3500 configured to engage at least power array board 3540-L.

圖5F提供了圖5A1和5A2的探針3500的等距視圖，於相對於圖5B1和5B2的下陣列板3540-L部分的最終位置，且橫向對齊在圖5C1和5C2的上陣列板3540-U部分的橢圓形通孔或開口3541-O下方，藉由上陣列板3540-U沿箭頭3545指示的方向的相對移動，以準備相對縱向移動或將探針 3500 裝入橢圓形通孔 3541-O，其中橫向對齊使得單獨的縱向移動將允許上陣列板3540-U滑過至保持凸片3502下方和旁邊的位置，其充當被配置為至少接合上陣列板3540-U的上保持特徵。保持凸片3502與保持環3501縱向間隔開一間隙3543，其大於上陣列板3540-U的縱向接合部分的厚度。Figure 5F provides an isometric view of the probe 3500 of Figures 5A1 and 5A2 in its final position relative to the lower array plate 3540-L portion of Figures 5B1 and 5B2, and laterally aligned with the upper array plate 3540- of Figures 5C1 and 5C2 Under the oval through hole or opening 3541-O of the U part, the upper array plate 3540-U is relatively moved in the direction indicated by the arrow 3545 to prepare for relative longitudinal movement or to install the probe 3500 into the oval through hole 3541-O. O, where the transverse alignment is such that longitudinal movement alone would allow upper array plate 3540-U to slide to a position below and beside retention tab 3502, which acts as an upper retaining feature configured to engage at least upper array plate 3540-U. The retaining tab 3502 is longitudinally spaced apart from the retaining ring 3501 by a gap 3543 that is greater than the thickness of the longitudinal joint portion of the upper array plate 3540-U.

圖5G提供了處於其最終縱向位置的探針3500、下陣列板3540-L和上陣列板3540-U部分的等距視圖，在圖5F所示的移動之後，但沒有完成上陣列板3540-U相對於探針3500和下陣列板3540-L的必要的相對橫向移動，如箭頭3545所示，將間隙3543從探針主體3504的右側移動至探針主體3504的左側，以完成探針保持環3501和保持凸片3502之間的上陣列板3540-U的邊緣的互鎖。Figure 5G provides an isometric view of portions of probe 3500, lower array plate 3540-L, and upper array plate 3540-U in their final longitudinal positions, after the movement shown in Figure 5F, but without completion of upper array plate 3540- The necessary relative lateral movement of U relative to probe 3500 and lower array plate 3540-L, as indicated by arrow 3545, moves gap 3543 from the right side of probe body 3504 to the left side of probe body 3504 to complete probe retention Interlocking between ring 3501 and retaining tab 3502 on edge of array plate 3540-U.

圖5H提供了處於其最終縱向和橫向位置的探針3500、下陣列板3540-L和上陣列板3540-U部分的等距視圖，在圖5G所示的移動之後，使得探針主體與上陣列板3540-U中的長方形開口3541-O的邊緣之間的間隙3543從探針主體3504的右側(在保持環3501與保持凸片3502之間)移動到探針主體3504左側，使得板的縱向定位保持在它們的相對位置以提供探針3500的保持，其位置和對準由為這三個組件設置的尺寸和公差所支配。Figure 5H provides an isometric view of probe 3500, lower array plate 3540-L, and upper array plate 3540-U portions in their final longitudinal and lateral positions, after the movement shown in Figure 5G such that the probe body is aligned with the upper array plate 3540-U. The gap 3543 between the edges of the rectangular opening 3541-O in the array plate 3540-U moves from the right side of the probe body 3504 (between the retaining ring 3501 and the retaining tab 3502) to the left side of the probe body 3504 such that the plate The longitudinal positioning remains in their relative position to provide retention of the probe 3500, the position and alignment of which are governed by the dimensions and tolerances set for these three components.

圖5A1-5H的實施例的多種替代方案是可能的，並且包括例如：(1)將開口形狀從圓形和長方形圓形構造中的一種或兩種改變為某種其他構造，例如正方形、矩形、三角形或某種其他簡單或複雜的多邊形或閉合彎曲配置，可能會或可能不會限制探針加載到頂板和底板之一或兩者中的單個旋轉方向，甚至定向方向以確保探針和每個板在加載及/或過程中正面朝上或確保下板和上板正確堆疊；(2)改變探針主體、凸片及/或保持環的形狀；(3)陣列板中的孔或開口可以不是筆直的縱向延伸的通孔，而是可以包括梯級、凸緣、凹口等，或者可以提供增強的彼此接合或探測自身的沉頭(counter suck)部分； (4)關於本文闡述的其他實施例指出的其他變型。在大多數實際實施中，每個陣列板將包括具有所需陣列圖案的多個通孔。在一些變型中，陣列板可限於電介質，而探針可限於導電材料。在其他變型中，陣列板可以包括向一些或全部探針提供電接觸的導電元件(例如跡線)，並且探針包括提供單個探針中或相鄰探針之間的不同元件的電隔離的介電元件。Various alternatives to the embodiment of Figures 5A1-5H are possible and include, for example: (1) Changing the opening shape from one or both of the circular and rectangular circular configurations to some other configuration, such as square, rectangular , triangle, or some other simple or complex polygon or closed curve configuration that may or may not limit probe loading to a single rotational direction in one or both of the top and bottom plates, or even orient the direction to ensure that the probe and each Each plate is face up during loading and/or ensuring that the lower and upper plates are stacked correctly; (2) Changing the shape of the probe body, tabs and/or retaining rings; (3) Holes or openings in the array plate Rather than being straight longitudinally extending through-holes, they may include steps, flanges, notches, etc., or may provide enhanced counter suck portions that engage each other or detect themselves; (4) Regarding others described herein Other variations are indicated in the examples. In most practical implementations, each array board will include multiple vias with the desired array pattern. In some variations, the array plate may be limited to dielectric and the probes may be limited to conductive material. In other variations, the array plate may include conductive elements (eg, traces) that provide electrical contact to some or all of the probes, and the probes may include electrical isolation of different elements within a single probe or between adjacent probes. Dielectric components.

進一步的評論和結論：Further comments and conclusions:

上面已經給出了許多實施例，但是在不背離本發明的精神的情況下，許多另外的實施例也是可能的。這些附加實施例中的一些可以基於本文的教導與通過引用併入本文的各種教導的組合。一些製造實施例可以使用多層電化學沉積工藝，而其他製造實施例則可以不使用。一些實施例可以使用選擇性沉積和毯式沉積工藝的組合，而其他實施例可以兩者都不使用，而還有一些實施例可以使用不同工藝的組合。例如，一些實施例可以不使用任何毯式沉積工藝及/或它們在連續層的形成中可以不使用平坦化工藝。一些實施例可以在不是電沉積工藝的一些層上使用選擇性沉積工藝或毯式沉積工藝。例如，一些實施例可以使用鎳(Ni)、鎳-磷(Ni-P)、鎳-鈷(NiCo)、金(Au)、銅(Cu)、錫(Sn)、銀(Ag)、鋅( Zn)、焊料、銠(Rh)、錸(Re)、鈹銅(BeCu)、鎢(W)、錸鎢(ReW)、鋁銅(AlCu)、鈀(Pd)、鈀鈷(PdCo)、鉑(Pt)、鉬(Mo)、錳(Mn)、鋼、P7合金、黃銅、鉻(Cr)、鉻、鉻銅(CrCu)、其他鈀合金、銅銀合金，作為結構材料或犧牲材料，而其他實施例可以使用不同的材料。例如，上述材料中的一些材料可因其彈簧特性而被優先使用，而其他材料可因其增強的導電性、其耐磨性、其阻隔特性、其熱特性(例如在高溫或高熱導率的屈服強度)而被使用。而有些材料可以根據其粘合特性、與其他材料的可分離性、甚至在所需應用或用途中感興趣的其他特性來選擇。其他實施例可以使用不同的材料或不同的材料組合，包括電介質(例如陶瓷、塑料、光致抗蝕劑、聚酰亞胺、玻璃、陶瓷或其他聚合物)、其他金屬、半導體、如犧牲材料或圖案化材料等相似物作為結構材料。例如，一些實施例可以使用銅、錫、鋅、焊料、光致抗蝕劑或其他材料作為犧牲材料。一些實施例可以在不同層上或在單層的不同部分上使用不同的結構材料。一些實施例可以去除犧牲材料，而其他實施例則不能。一些實施例可以形成探針結構，而其他實施例可以使用本發明的彈簧模塊用於非探測目的(例如，以期望的彈簧力或順應性接合來偏壓其他操作裝置)。A number of embodiments have been given above, but many further embodiments are possible without departing from the spirit of the invention. Some of these additional embodiments may be based on the teachings herein in combination with various teachings incorporated herein by reference. Some fabrication embodiments may use a multi-layer electrochemical deposition process, while other fabrication embodiments may not. Some embodiments may use a combination of selective deposition and blanket deposition processes, while other embodiments may use neither, and still other embodiments may use a combination of different processes. For example, some embodiments may not use any blanket deposition processes and/or they may not use planarization processes in the formation of successive layers. Some embodiments may use selective deposition processes or blanket deposition processes on some layers that are not electrodeposition processes. For example, some embodiments may use nickel (Ni), nickel-phosphorus (Ni-P), nickel-cobalt (NiCo), gold (Au), copper (Cu), tin (Sn), silver (Ag), zinc ( Zn), solder, rhodium (Rh), rhenium (Re), beryllium copper (BeCu), tungsten (W), rhenium tungsten (ReW), aluminum copper (AlCu), palladium (Pd), palladium cobalt (PdCo), platinum (Pt), molybdenum (Mo), manganese (Mn), steel, P7 alloy, brass, chromium (Cr), chromium, chromium copper (CrCu), other palladium alloys, copper-silver alloys, as structural materials or sacrificial materials, Other embodiments may use different materials. For example, some of the above materials may be preferred for their spring properties, while other materials may be preferred for their enhanced electrical conductivity, their wear resistance, their barrier properties, their thermal properties (e.g., at high temperatures or with high thermal conductivity). Yield strength) is used. And some materials can be selected based on their adhesive properties, separability from other materials, or even other properties of interest in the desired application or use. Other embodiments may use different materials or different combinations of materials, including dielectrics (such as ceramics, plastics, photoresists, polyimides, glass, ceramics, or other polymers), other metals, semiconductors, such as sacrificial materials or patterned materials and the like as structural materials. For example, some embodiments may use copper, tin, zinc, solder, photoresist, or other materials as sacrificial materials. Some embodiments may use different structural materials on different layers or on different parts of a single layer. Some embodiments can remove sacrificial material, while other embodiments cannot. Some embodiments may form probe structures, while other embodiments may use the spring module of the present invention for non-probing purposes (eg, to bias other operating devices with a desired spring force or compliant engagement).

還應當理解，本發明的一些方面的探針元件可以用與本文闡述的工藝非常不同的工藝來形成，並且並不意味著本發明的結構方面需要僅通過本文教導的那些過程來形成，或通過本文教導的人員而變得顯而易見的過程。It should also be understood that probe elements of some aspects of the invention may be formed using processes very different from those set forth herein, and it is not intended that structural aspects of the invention need to be formed solely by those processes taught herein, or by This article teaches the process that becomes apparent to people.

雖然本說明書的各個部分已經提供有標題，但並不旨在使用標題來限制在本說明書的一個部分中發現的教導的應用以應用於本說明書的其他部分。例如，與一個實施例相關的承認的替代方案旨在應用於所有實施例，只要不同實施例的特徵使這種應用發揮作用並且不會以其他方式反駁或消除所採用的實施例的所有優點。Although various portions of this specification have been provided with headings, the use of headings is not intended to limit the application of teachings found in one portion of this specification to other portions of this specification. For example, alternatives admitted with respect to one embodiment are intended to apply to all embodiments to the extent that features of the different embodiments enable such application and do not otherwise contradict or eliminate all advantages of the embodiment employed.

本文闡述的本發明的任何方面旨在代表獨立的發明描述，申請人將其視為充分且完整的發明描述，申請人認為可以將其闡述為獨立申請專利範圍，而不需要從其他實施例引入額外的限製或要素或本文闡述的方面，以用於解釋或澄清，除非在此類獨立申請專利範圍一旦書面明確闡述時。還應當理解，本文闡述的方面的任何變體代表可以形成單獨的獨立申請專利範圍、單獨地添加到獨立申請專利範圍、或者作為從屬申請專利範圍添加以進一步限定由那些相應的從屬申請專利範圍要求保護的發明的單獨的和分開的特徵，並且其被寫下來。Any aspect of the invention set forth herein is intended to represent a self-contained description of the invention, which Applicant considers to be a sufficient and complete description of the invention, which Applicant believes can be set forth as a self-contained patent claim without the need to be introduced from other embodiments Additional limitations or elements or aspects set forth herein are provided for the purpose of explanation or clarification, except as otherwise expressly set forth in writing once the patentable scope of such an independent claim is made. It will also be understood that any variation representation of the aspects set forth herein may form a separate independent claim, be added separately to the independent claim, or be added as a dependent claim to further define the scope claimed by those corresponding dependent claims. Separate and separate features of the protected invention and it is written down.

鑑於本文的教導，本發明的實施例的許多進一步的實施例、設計的替代方案和用途對於本領域技術人員來說將是顯而易見的。因此，本發明並非限於上述特定說明性實施例、替代方案和用途，而是僅由下文提出的申請專利範圍所限制。Many further examples, design alternatives, and uses of embodiments of the invention will be apparent to those skilled in the art in view of the teachings herein. Accordingly, the present invention is not limited to the specific illustrative embodiments, alternatives and uses described above, but only by the scope of the claims set forth below.

88:表面 82:基底 84:光致抗蝕劑 92(a)-92(c):開口或孔 94、96:金屬 98:3-D結構 200:彈簧模塊 221-1、221-2:彈簧元件 201:基座 211:連接支撐件(或支座或橋) 231:尖端元件 300:彈簧模塊 3400:探針 3401:基座(或框架或基座元件或框架元件) 3421-UC、3421-LC:螺旋彈簧陣列 3401-A、3401-F:側面 3421-1U、3421-2U、3421-1L、3421-2L:螺旋懸臂 UC1-UC4、LC1-LC4:懸臂元件 3431-UA、3431-LA:尖端臂 3431-U、3431-L:尖端 3411-1、3411-2、3412-1、3412-2:支座 3401-F、3401-A:側壁 3421-UC、3421-LC、3500-L:順應元件 3421-UC、3421-LC:上彈簧部分 3411-1、3411-2、3412-1、3412-2:支座(或支座區域) 3421-2U、3421-1U、3421-1L、3421-2L、UC1-UC4:懸臂元件(或彈簧螺旋或螺旋元件或懸臂) 3502:凸片 3540-L、3540-U:陣列板 3504:探針主體 3541-C:下板探針孔(或通孔) 3500:探針 3541-O:上板探針孔(或橢圓形通孔或長方形開口) 3521-U，3521-L:彈簧 3545:箭頭 3543:間隙 3501:保持環 88:Surface 82: Base 84:Photoresist 92(a)-92(c): Opening or hole 94, 96: Metal 98:3-D Structure 200:Spring module 221-1, 221-2: spring element 201:Pedestal 211: Connecting supports (or supports or bridges) 231: Cutting-edge components 300:Spring module 3400: probe 3401: Base (or frame or base element or frame element) 3421-UC, 3421-LC: Coil spring array 3401-A, 3401-F: Side 3421-1U, 3421-2U, 3421-1L, 3421-2L: Spiral cantilever UC1-UC4, LC1-LC4: cantilever elements 3431-UA, 3431-LA: Tip arm 3431-U, 3431-L: Tip 3411-1, 3411-2, 3412-1, 3412-2: Support 3401-F, 3401-A: side wall 3421-UC, 3421-LC, 3500-L: Compliant element 3421-UC, 3421-LC: upper spring part 3411-1, 3411-2, 3412-1, 3412-2: Support (or support area) 3421-2U, 3421-1U, 3421-1L, 3421-2L, UC1-UC4: Cantilever element (or spring spiral or spiral element or cantilever) 3502: Tab 3540-L, 3540-U: array board 3504: Probe body 3541-C: Lower plate probe hole (or through hole) 3500:Probe 3541-O: Upper plate probe hole (or oval through hole or rectangular opening) 3521-U, 3521-L: spring 3545:arrow 3543:Gap 3501:Retaining ring

圖1A-1F示意性地描繪了使用粘附掩模電鍍形成結構的第一層，其中第二材料的毯式沉積覆蓋第一材料的沉積位置之間的開口和第一材料本身。Figures 1A-1F schematically depict the use of adhesion mask electroplating to form a first layer of a structure in which a blanket deposition of a second material covers the opening between the deposition location of the first material and the first material itself.

圖1G描繪了由於將沉積的材料平坦化至期望水平而完成的第一層的形成。Figure 1G depicts the formation of the first layer completed as a result of planarizing the deposited material to the desired level.

圖1H和1I分別描繪了在形成多層結構之後以及在從犧牲材料釋放該結構之後的處理狀態。Figures 1H and 1I depict processing states after forming the multilayer structure and after releasing the structure from the sacrificial material, respectively.

圖2描繪了示例性彈簧模塊或順應模塊的等距視圖，其具有兩個連接的彈簧元件、基座以及可在探針中使用或用作探針的連接支撐件或支座。Figure 2 depicts an isometric view of an exemplary spring module or compliant module with two connected spring elements, a base and a connection support or stand that may be used in or as a probe.

圖3描繪了可用於探針中或用作探針的第二示例性彈簧模塊或順應模塊的等距視圖，類似於圖2的模塊，不同之處在於兩個彈簧元件更厚，因此提供比圖2的元件更大的彈簧常數。Figure 3 depicts an isometric view of a second exemplary spring module or compliant module that may be used in or as a probe, similar to the module of Figure 2, except that the two spring elements are thicker, thus providing a The element of Figure 2 has a larger spring constant.

圖4A-4D4提供了探針的各種視圖，其中探針由兩個背對背的模塊形成，並且這兩個模塊共享公共基座，該公共基座也用作支座並且具有環形構造。Figures 4A-4D4 provide various views of a probe formed from two back-to-back modules, and the two modules share a common base that also serves as a stand and has a ring-shaped configuration.

圖4E1提供了圖4A-4D4的探針的側視圖，示出了可以製造探針的17個樣品層級別，其中並非所有層都具有獨特的配置。Figure 4E1 provides a side view of the probe of Figures 4A-4D4, showing the 17 sample layer levels at which the probe can be fabricated, not all of which have unique configurations.

圖4E2-A至4E9-B示出了層L1-L17的獨特配置的俯視圖(-A圖)和等角視圖(-B圖)中所示的橫截面配置，以圖4E2-A和4E2-B所示的層L1和L17的視圖；圖4E3-A和4E3-B示出了層L2、L4、L6和L8的視圖；圖4E4-A和4E4-B示出了層L3和L7的視圖；圖4E5-A和4E5-B示出了層L5的視圖；圖4E6-A和4E6-B示出了層L9的視圖；圖4E7-A和4E7-B示出了層L10、L12、L14和L16的視圖；圖4E8-A和4E8-B示出了層L11和L15的視圖；和圖4E9-A和4E9-B示出了層L13的視圖。Figures 4E2-A to 4E9-B illustrate the cross-sectional configuration shown in Figures 4E2-A and 4E2- Views of layers L1 and L17 shown in B; Figures 4E3-A and 4E3-B show views of layers L2, L4, L6 and L8; Figures 4E4-A and 4E4-B show views of layers L3 and L7 ; Figures 4E5-A and 4E5-B show views of layer L5; Figures 4E6-A and 4E6-B show views of layer L9; Figures 4E7-A and 4E7-B show layers L10, L12, L14 and a view of L16; Figures 4E8-A and 4E8-B show a view of layers L11 and L15; and Figures 4E9-A and 4E9-B show a view of layer L13.

圖5A1-5H示出了根據本發明實施例的示例探針和雙陣列板安裝和保持配置，其使用與兩個陣列板組合的橫向滑動鎖或凸片和保持環。Figures 5A1-5H illustrate example probe and dual array plate mounting and retention configurations using transverse sliding locks or tabs and retention rings combined with two array plates in accordance with embodiments of the present invention.

圖5A1和5A2分別提供了根據本發明的實施例的示例性探針的從上方和從下方的等距視圖，其中探針包括用於接合下接合板中的圓形通孔的頂部邊緣的安裝環或止動環，並且探針右側的滑動夾或凸片，用於接合上陣列板中的橢圓形通孔的右上邊緣。Figures 5A1 and 5A2 provide isometric views from above and below, respectively, of an exemplary probe including a mounting for engaging the top edge of a circular through-hole in a lower bonding plate in accordance with an embodiment of the present invention. ring or stop ring, and a sliding clip or tab on the right side of the probe that engages the upper right edge of the oval through hole in the upper array board.

圖5B1和圖5B2分別提供了下陣列板部分的等距視圖和俯視圖，示出了圖5A1和5A2的探針的下部部分可以***的單個圓形通孔。Figures 5B1 and 5B2 provide isometric and top views, respectively, of the lower array plate portion, showing a single circular through hole into which the lower portion of the probe of Figures 5A1 and 5A2 can be inserted.

圖5C1和5C2分別提供了上陣列板部分的等軸視圖和俯視圖，示出了圖5A1和5A2的探針的上部部分可以縱向***然後橫向移動的單個橢圓形通孔。Figures 5C1 and 5C2 provide an isometric and top view of an upper array plate portion, respectively, showing a single oval through hole into which the upper portion of the probe of Figures 5A1 and 5A2 can be inserted longitudinally and then moved laterally.

圖5D提供了圖5A1和5A2的探針的等距視圖，在圖5B1和圖5B2的下陣列板部分的圓形開口上方橫向對準，準備通過沿箭頭所示的方向相對移動探針來相對縱向移動或將探針裝載到下陣列板中的圓形開口中。Figure 5D provides an isometric view of the probes of Figures 5A1 and 5A2, aligned laterally over the circular opening of the lower array plate portion of Figures 5B1 and 5B2, prepared to move relative to each other by moving the probes relative to each other in the directions indicated by the arrows. Move or load the probe lengthwise into the circular opening in the lower array plate.

圖5E提供了圖5A1和5A2、5B1和5B以及5D的探針和下陣列板部分的等距視圖，將探針縱向裝載到下陣列板部分的圓形開口中之後，使得探針的保持環靠在下陣列板的上表面上，並且使得通過探針直徑和陣列板中開口的直徑的適當尺寸和公差設置來維持探針和下陣列板的橫向對準。Figure 5E provides an isometric view of the probe and lower array plate portion of Figures 5A1 and 5A2, 5B1 and 5B, and 5D after loading the probe lengthwise into the circular opening of the lower array plate portion such that the probe's retaining ring against the upper surface of the lower array plate and such that lateral alignment of the probe and lower array plate is maintained by appropriate sizing and tolerance settings of the diameter of the probe and the diameter of the opening in the array plate.

圖5F提供了圖5A1和圖5A2的探針的等距視圖，在相對於圖5B1和5B2的下陣列板部分處於最終位置，且在圖5C1和圖5C2的上陣列板部分的橢圓形開口下方橫向對齊，通過上陣列板沿箭頭指示的方向的相對運動，準備相對縱向移動或將探針加載到橢圓形開口中，其中橫向對準使得單獨的縱向移動將允許上陣列板滑過保持凸片下方和旁邊的位置。Figure 5F provides an isometric view of the probe of Figures 5A1 and 5A2 in its final position relative to the lower array plate portion of Figures 5B1 and 5B2 and below the oval opening of the upper array plate portion of Figures 5C1 and 5C2 Lateral alignment, by relative movement of the upper array plate in the direction indicated by the arrow, prepares for relative longitudinal movement or loading of the probe into the oval opening, where the transverse alignment is such that longitudinal movement alone will allow the upper array plate to slide past the retaining tabs below and to the side.

圖5G提供了在圖5F所示的移動之後處於其最終縱向位置的探針、下陣列板和上陣列板部分的等距視圖，但沒有完成如箭頭所示的上陣列板相對於探針和下陣列板的必要的相對橫向移動，以完成上陣列板的邊緣在探針保持環和保持凸片之間的互鎖。Figure 5G provides an isometric view of the probe, lower array plate, and upper array plate portions in their final longitudinal position after the movement shown in Figure 5F, but without completing the upper array plate relative to the probe and The necessary relative lateral movement of the lower array plate is required to complete the interlocking of the edge of the upper array plate between the probe retaining ring and the retaining tab.

圖5H提供了在圖5G所示的移動之後處於其最終縱向和橫向位置的探針、下陣列板和上陣列板部分的等距視圖，使得板的縱向定位保持在它們的相對位置提供了探針的保持，其位置和對準由設置這三個組件的尺寸和公差決定。Figure 5H provides an isometric view of the probe, lower array plate, and upper array plate portions in their final longitudinal and lateral positions after the movement shown in Figure 5G, such that the longitudinal positioning of the plates remains in their relative positions to provide probe The retention of the needle, its position and alignment are determined by the dimensions and tolerances set for these three components.

3545:箭頭 3545:arrow

3501:保持環 3501:Retaining ring

3541-O:上板探針孔 3541-O: Upper plate probe hole

3500:探針 3500:Probe

3540-L、3540-U:陣列板 3540-L, 3540-U: array board

3502:凸片 3502: Tab

Claims

一種探針陣列，包括： (1) 多個探針 (3500) 用於在兩個電子電路元件之間進行接觸，每一探針包括： (a) 至少一順應結構，包括： (i) 至少一支座，具有縱向分開的第一端和第二端； (ii) 至少一第一順應元件 (3500-U)，包括當未偏置時的一二維實質平面的彈簧 (3521-U)，其中，在實質垂直於一平面配置的一方向上，該第一順應元件 (3500-U)提供順從性，其中該第一順應元件的一第一部分功能性地結合該至少一支座，並且該第一順應元件的一第二部分功能性地結合一第一尖端臂，該第一尖端臂可相對於該至少一支座彈性移動，其中，當該第一順應元件未偏置時，該第一尖端臂直接或間接地保持一第一尖端(3531-U)縱向延伸超出該至少一支座的第一端；和 (iii)至少一個第二順應元件(3500-L)，包括一彈簧(3521-L)，其中，在實質垂直於該平面配置的一方向上，該第二順應元件(3500-L)提供順從性，其中該第二順應元件的一第一部分功能性地結合該至少一支座，並且該第二順應元件的一第二部分功能性地結合一第二尖端臂，該第二尖端臂可以相對於該至少一支座彈性移動，其中，當該第二順應元件未偏置時，該第二尖端臂直接或間接地保持一第二尖端(3531-L)縱向延伸超出該至少一支座的該第二端，其中該第一和第二順應元件(3500-U，3500-L)的該第一部分經由該至少一支座彼此縱向間隔開，且其中，當該第一和第二尖端中的至少一個朝向另一個偏置時，該第一和第二順應元件的該第二部分以選自於由以下方式所組成的群組的一方式縱向移動：(A)一起移動得更近，和(B)更遠； (2)具有多個下板探針孔(3541-C)的一下陣列板(3540-L)； (3)具有多個上板探針孔(3541-O)的一上陣列板(3540-U)，其中上板探針孔(3541-O)的至少一部分包括至少一個側壁特徵，其提供將該上陣列板(3540-U)上的每個上板探針孔(3541-O)延伸至比下陣列板(3541-C)上的一對應的下板探針孔(3541-C)的一對應部分更寬的寬度(3540-L), 其中，該下陣列板(3540-L)被配置為從該下陣列板(3540-L)上方接收該探針(3500)；其中，該上陣列板(3540-U)被配置為從該上陣列板(3540-U)下方接收該探針；其中，該多個探針的至少一部分更包括至少一下保持特徵(3501)和至少一上保持特徵(3502)，該至少一下保持特徵(3501)被配置為至少接合該下陣列板(3540-L)，該至少一上保持特徵(3502)被配置為至少接合該上陣列板(3540-U)；其中，該至少一下保持特徵(3501)包括至少一橫向延伸特徵，該至少一橫向延伸特徵由個別探針(3500)的一主體突出，其大小和結構限制個別探針(3500)可***該下陣列板(3540-L)的下板探針孔(3541-C)的縱向範圍；其中，該至少一上保持特徵(3502)包括至少一凸片狀特徵，其在該下保持特徵(3501)上方的水平處從個別探針(3500)的該主體橫向延伸，且與該下保持特徵(3501)縱向間隔開一間隙(3543)，該間隙大於該上陣列板(3540-U)的一縱向接合部的厚度，且其中，該至少一上保持特徵(3502)具有一橫向配置，其尺寸為對齊時穿過上陣列板(3540-U)上的上板探針孔(3541-O)的側壁特徵所提供的延伸；以及其中，在將該上保持特徵(3502)縱向定位在該上陣列板(3540-U)中的上板探針孔(3541-O)的延伸上方之後，該上保持特徵(3502)相對於該上板探針孔(3541-O)進行橫向位移，使得該至少一上保持特徵(3502)不能再縱向穿過該上陣列板(3540-U)中的上板探針孔(3541-O)的該延伸。 A probe array including: (1) Multiple probes (3500) for making contact between two electronic circuit components, each probe including: (a) At least one compliant structure, including: (i) at least one support having longitudinally separated first and second ends; (ii) At least one first compliant element (3500-U), comprising a two-dimensional substantially planar spring (3521-U) when unbiased, wherein the first compliant element (3500-U) is configured in a direction substantially perpendicular to a plane. A compliant element (3500-U) provides compliance, wherein a first portion of the first compliant element functionally engages the at least one support, and a second portion of the first compliant element functionally engages a first a tip arm, the first tip arm being resiliently movable relative to the at least one base, wherein the first tip arm directly or indirectly retains a first tip when the first compliant element is not biased (3531-U ) extends longitudinally beyond the first end of the at least one support; and (iii) At least one second compliant element (3500-L), including a spring (3521-L), wherein the second compliant element (3500-L) provides compliance in a direction disposed substantially perpendicular to the plane , wherein a first portion of the second compliant element functionally engages the at least one base, and a second portion of the second compliant element functionally engages a second tip arm, the second tip arm can be relative to The at least one mount is resiliently movable, wherein the second tip arm directly or indirectly retains a second tip (3531-L) extending longitudinally beyond the at least one mount when the second compliant element is unbiased. second end, wherein the first portions of the first and second compliant elements (3500-U, 3500-L) are longitudinally spaced apart from each other via the at least one support, and wherein when at least one of the first and second tips is directed towards the other During a bias, the second portions of the first and second compliant elements move longitudinally in a manner selected from the group consisting of: (A) moving closer together, and (B) moving closer together. far; far (2) A lower array plate (3540-L) with multiple lower plate probe holes (3541-C); (3) An upper array plate (3540-U) having a plurality of upper plate probe holes (3541-O), wherein at least a portion of the upper plate probe holes (3541-O) includes at least one sidewall feature that provides Each upper plate probe hole (3541-O) on the upper array plate (3540-U) extends further than a corresponding lower plate probe hole (3541-C) on the lower array plate (3541-C). One corresponds to the wider width of the part (3540-L), Wherein, the lower array plate (3540-L) is configured to receive the probe (3500) from above the lower array plate (3540-L); Wherein, the upper array board (3540-U) is configured to receive the probe from below the upper array board (3540-U); Wherein, at least a portion of the plurality of probes further includes at least one lower retention feature (3501) and at least one upper retention feature (3502), the at least one lower retention feature (3501) is configured to engage at least the lower array plate (3540-L ), the at least one upper retention feature (3502) configured to engage at least the upper array plate (3540-U); Wherein, the at least one lower retaining feature (3501) includes at least one laterally extending feature protruding from a body of the individual probe (3500), the size and structure of which limits the insertion of the individual probe (3500) into the lower part. The longitudinal extent of the probe hole (3541-C) on the lower plate of the array plate (3540-L); wherein the at least one upper retaining feature (3502) includes at least one tab-like feature extending laterally from the body of the individual probe (3500) at a level above the lower retaining feature (3501) and aligned with the lower retaining feature (3501). the features (3501) are longitudinally spaced apart by a gap (3543) that is greater than the thickness of a longitudinal joint of the upper array plate (3540-U), and wherein the at least one upper retention feature (3502) has a transverse configuration, The dimensions are the extension provided by the sidewall feature through the upper plate probe hole (3541-O) on the upper array plate (3540-U) when aligned; and wherein the upper retaining feature (3502) is positioned relative to the The upper plate probe hole (3541-O) is laterally displaced such that the at least one upper retention feature (3502) can no longer longitudinally pass through the upper plate probe hole (3541-O) in the upper array plate (3540-U) of that extension.

如請求項1所述的探針陣列，其中，該上陣列板(3540-U)的橫向位移導致該上陣列板(3540-U)滑過到該上保持特徵(3502)下方且旁邊的位置。The probe array of claim 1, wherein lateral displacement of the upper array plate (3540-U) causes the upper array plate (3540-U) to slide to a position below and beside the upper retention feature (3502) .

如請求項1所述的探針陣列，其中，該上保持特徵(3502)相對於該上陣列板(3540-U)中的上板探針孔(3541-O)的側向移位導致該上保持特徵(3502)之間的間隙(3543)相應探針(3500)的主體和上陣列板(3540-U)中的上板探針孔(3541-O)的邊緣從主體的一側移動到主體的相對側，使得將下陣列板(3540-L) 和上陣列板(3540-U) 的縱向定位保持在其相對位置，提供了探針(3500)的保持，其位置和對準由為該上保持特徵(3502)、該上板探針孔(3541-O)和該探針(3500)的直徑設置的尺寸和公差所規定。The probe array of claim 1, wherein lateral displacement of the upper retaining feature (3502) relative to the upper plate probe hole (3541-O) in the upper array plate (3540-U) causes the The gap (3543) between the upper retaining feature (3502) corresponding to the body of the probe (3500) and the edge of the upper plate probe hole (3541-O) in the upper array plate (3540-U) moves from the side of the body to opposite sides of the body such that the longitudinal positioning of the lower array plate (3540-L) and the upper array plate (3540-U) is maintained in their relative positions, providing for retention of the probe (3500) whose position and alignment are determined by Dimensions and tolerances are specified for the diameter arrangement of the upper retention feature (3502), the upper plate probe hole (3541-O), and the probe (3500).

如請求項1所述的探針陣列，其中，該下陣列板(3540-L)的該下板探針孔(3541-C)具有選自於由以下形狀所組成的群組： (A)圓形； (B) 長圓形； (C) 正方形； (D) 長方形； (E) 三角形； (F) 簡單多邊形； (G) 複雜多邊形； (H) 閉合彎曲結構。The probe array of claim 1, wherein the lower plate probe hole (3541-C) of the lower array plate (3540-L) has a shape selected from the group consisting of: (A) Circle; (B) Oblong; (C) Square; (D) Rectangle; (E) Triangle; (F) Simple polygon; (G) Complex polygon; (H) Closed curved structure.

如請求項1所述的探針陣列，其中，該上陣列板(3540-U)的上板探針孔(3541-O)具有選自於由以下形狀所組成的群組： (A)圓形； (B) 長圓形； (C) 正方形； (D) 長方形； (E) 三角形； (F) 簡單多邊形； (G) 複雜多邊形； (H) 閉合彎曲結構。The probe array of claim 1, wherein the upper plate probe holes (3541-O) of the upper array plate (3540-U) have shapes selected from the group consisting of: (A) Circle Shape; (B) Oblong; (C) Square; (D) Rectangle; (E) Triangle; (F) Simple polygon; (G) Complex polygon; (H) Closed curved structure.

如請求項1所述的探針陣列，其中，該下陣列板(3540-L)的下板探針孔(3541-C)具有選自於由以下形狀所組成的群組：(A)直的縱向延伸通孔(B)包括梯級的孔洞； (C)包括壁架的孔洞； (D)包括槽口的孔洞； (E) 包括彼此接合的沉頭部分的孔洞； (F)包括與該個別探針接合的沉頭部分的孔洞。The probe array of claim 1, wherein the lower plate probe holes (3541-C) of the lower array plate (3540-L) have shapes selected from the group consisting of: (A) Straight (B) a hole that includes a step; (C) a hole that includes a ledge; (D) a hole that includes a slot; (E) a hole that includes countersunk portions that engage each other; (F) a hole that includes the Holes in the countersunk section where individual probes engage.

如請求項1所述的探針陣列，其中，該上陣列板(3541-U)的該上板探針孔(3541-O)具有選自於由以下形狀所組成的群組： (A )直的縱向延伸的通孔(B)包括梯級的孔洞； (C)包括壁架的孔洞； (D)包括槽口的孔洞； (E) 包括彼此接合的沉頭部分的孔洞； (F)包括與該個別探針接合的沉頭部分的孔洞。The probe array of claim 1, wherein the upper plate probe hole (3541-O) of the upper array plate (3541-U) has a shape selected from the group consisting of: (A) A straight longitudinally extending through hole (B) a hole including a step; (C) a hole including a ledge; (D) a hole including a slot; (E) a hole including countersunk portions engaging each other; (F) including The hole in the countersunk portion that engages the individual probe.

如請求項1所述的探針陣列，其中，該探針(3500)由導電材料製成。The probe array of claim 1, wherein the probe (3500) is made of conductive material.

如請求項1所述的探針陣列，其中，該下陣列板(3540-L)和該上陣列板(3540-U)由介電材料製成。The probe array of claim 1, wherein the lower array plate (3540-L) and the upper array plate (3540-U) are made of dielectric material.

如請求項9所述的探針陣列，其中，該下陣列板(3540-L)和該上陣列板(3540-U)還包括導電元件以向至少一個探針(3500)提供電接觸。The probe array of claim 9, wherein the lower array plate (3540-L) and the upper array plate (3540-U) further include conductive elements to provide electrical contact to at least one probe (3500).

如請求項8所述的探針陣列，其中，該探針(3500)包括電介質元件，其提供單個探針中或相鄰探針之間的不同元件的電隔離。The probe array of claim 8, wherein the probes (3500) include dielectric elements that provide electrical isolation of different elements within a single probe or between adjacent probes.

如請求項1所述的探針陣列，其中，該下保持特徵(3501)具有環形構造。The probe array of claim 1, wherein the lower retention feature (3501) has an annular configuration.

一種用於在兩個電子電路元件之間進行接觸的探針，包括： (a)至少一個順應結構，包括： (i) 至少一支座，具有縱向分開的第一端和第二端； (ii) 至少一第一順應元件 (3500-U)，包括當未偏置時的一二維實質平面的彈簧 (3521-U)，其中，在實質垂直於一平面配置的一方向上，該第一順應元件 (3500-U)提供順從性，其中該第一順應元件的一第一部分功能性地結合該至少一支座，並且該第一順應元件的一第二部分功能性地結合一第一尖端臂，該第一尖端臂可相對於該至少一支座彈性移動，其中，當該第一順應元件未偏置時，該第一尖端臂直接或間接地保持一第一尖端(3531-U)縱向延伸超出該至少一支座的第一端；和 (iii)至少一個第二順應元件(3500-L)，包括一彈簧(3521-L)，其中，在實質垂直於該平面配置的一方向上，該第二順應元件(3500-L)提供順從性，其中該第二順應元件的一第一部分功能性地結合該至少一支座，並且該第二順應元件的一第二部分功能性地結合一第二尖端臂，該第二尖端臂可以相對於該至少一支座彈性移動，其中，當該第二順應元件未偏置時，該第二尖端臂直接或間接地保持一第二尖端(3531-L)縱向延伸超出該至少一支座的該第二端，其中，該第一和第二順應元件(3500-U，3500-L)的該第一部分經由該至少一支座彼此縱向間隔開，且其中，當該第一和第二尖端中的至少一個朝向另一個偏置時，該第一和第二順應元件的該第二部分以選自於由以下方式所組成的群組的一方式縱向移動：(A)一起移動得更近，和(B)更遠；其中，該探針的至少一部分還包括至少一個下保持特徵(3501)和至少一個上保持特徵(3502)；其中，該至少一個下保持特徵(3501)包括至少一個從探針(3500)的主體突出的橫向延伸特徵；其中，該至少一個上保持特徵(3502)包括至少一個凸片狀特徵，其在下保持特徵(3501)上方的水平處從探針(3500)的主體橫向延伸並且與下保持特徵(3501)縱向間隔開一間距(3543)。 A probe used to make contact between two electronic circuit components, including: (a) At least one compliant structure, including: (i) at least one support having longitudinally separated first and second ends; (ii) At least one first compliant element (3500-U), comprising a two-dimensional substantially planar spring (3521-U) when unbiased, wherein the first compliant element (3500-U) is configured in a direction substantially perpendicular to a plane. A compliant element (3500-U) provides compliance, wherein a first portion of the first compliant element functionally engages the at least one support, and a second portion of the first compliant element functionally engages a first a tip arm, the first tip arm being resiliently movable relative to the at least one base, wherein the first tip arm directly or indirectly retains a first tip when the first compliant element is not biased (3531-U ) extends longitudinally beyond the first end of the at least one support; and (iii) At least one second compliant element (3500-L), including a spring (3521-L), wherein the second compliant element (3500-L) provides compliance in a direction disposed substantially perpendicular to the plane , wherein a first portion of the second compliant element functionally engages the at least one base, and a second portion of the second compliant element functionally engages a second tip arm, the second tip arm can be relative to The at least one mount is resiliently movable, wherein the second tip arm directly or indirectly retains a second tip (3531-L) extending longitudinally beyond the at least one mount when the second compliant element is unbiased. second end, wherein the first portions of the first and second compliant elements (3500-U, 3500-L) are longitudinally spaced apart from each other via the at least one support, and wherein when at least one of the first and second tips is oriented towards In another bias, the second portions of the first and second compliant elements move longitudinally in a manner selected from the group consisting of: (A) moving closer together, and (B) farther; further; wherein at least a portion of the probe further includes at least one lower retention feature (3501) and at least one upper retention feature (3502); wherein the at least one lower retention feature (3501) includes at least one laterally extending feature protruding from the body of the probe (3500); wherein the at least one upper retention feature (3502) includes at least one tab-like feature extending laterally from the body of the probe (3500) at a level above the lower retention feature (3501) and longitudinally spaced from the lower retention feature (3501) Open a gap (3543).

如請求項13所述的探針，其中，該探針(3500)由導電材料製成。The probe of claim 13, wherein the probe (3500) is made of conductive material.

如請求項14所述的探針，其中，該探針(3500)包括介電元件，其提供單個探針中或相鄰探針之間的不同元件的電隔離。The probe of claim 14, wherein the probe (3500) includes a dielectric element that provides electrical isolation of different elements within a single probe or between adjacent probes.

如請求項13所述的探針，其中，該下保持特徵(3501)具有環形構造。The probe of claim 13, wherein the lower retention feature (3501) has an annular configuration.