TW202401146A - Exposure apparatus, manufacturing method of flat panel display, device manufacturing method, and exposure method - Google Patents

Exposure apparatus, manufacturing method of flat panel display, device manufacturing method, and exposure method Download PDF

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TW202401146A
TW202401146A TW112135855A TW112135855A TW202401146A TW 202401146 A TW202401146 A TW 202401146A TW 112135855 A TW112135855 A TW 112135855A TW 112135855 A TW112135855 A TW 112135855A TW 202401146 A TW202401146 A TW 202401146A
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exposure
mark
optical system
projection optical
detection device
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TW112135855A
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Chinese (zh)
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內藤一夫
青木保夫
長島雅幸
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日商尼康股份有限公司
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Publication of TW202401146A publication Critical patent/TW202401146A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

Abstract

This liquid crystal exposure device (10) which performs scanning exposure by irradiating a substrate (P) with illuminating light (IL) via a projection optical system (30), and driving the projection optical system (PL) relative to the substrate (P), is equipped with alignment microscopes (60) which perform mark detection of marks (Mk) provided on a substrate (P), a first drive system that drives the alignment microscopes (60), a second drive system that drives the projection optical system (PL), and a control device that controls the first and second drive systems in such a manner that the alignment microscopes (60) are driven before the projection optical system (PL) is driven. As a result of this configuration it is possible to minimize tact time required for exposure.

Description

曝光裝置、平面顯示器之製造方法、元件製造方法、及曝光方法Exposure device, manufacturing method of flat panel display, component manufacturing method, and exposure method

本發明係關於曝光裝置、平面顯示器之製造方法、元件製造方法及曝光方法，詳言之，係關於藉由對物體進行將能量束掃描於既定掃描方向之掃描曝光，將既定圖案形成在物體上之曝光裝置及方法、以及包含前述曝光裝置或方法之平面顯示器或元件之製造方法。The present invention relates to an exposure device, a manufacturing method of a flat panel display, a device manufacturing method and an exposure method. Specifically, it relates to forming a predetermined pattern on an object by performing scanning exposure on the object by scanning an energy beam in a predetermined scanning direction. The exposure device and method, and the manufacturing method of the flat panel display or component including the aforementioned exposure device or method.

一直以來，於製造液晶顯示元件、半導體元件（積體電路等）等電子元件（微元件）之微影製程，係使用曝光裝置，此曝光裝置使用能量束將形成在光罩或標線片（以下，統稱為「光罩」）之圖案轉印至玻璃板或晶圓（以下，統稱為「基板」）上。Traditionally, the lithography process for manufacturing electronic components (microcomponents) such as liquid crystal display components and semiconductor components (integrated circuits, etc.) has used an exposure device. This exposure device uses an energy beam to form a pattern on a mask or reticle ( The pattern (hereinafter, collectively referred to as the "reticle") is transferred to a glass plate or wafer (hereinafter, collectively referred to as the "substrate").

作為此種曝光裝置，已知有一種在使光罩與基板實質靜止之狀態下，將曝光用照明光（能量束）掃描於既定掃描方向，據以在基板上形成既定圖案之線束掃描式的掃描曝光裝置（例如參照專利文獻1）。As this type of exposure apparatus, a line beam scanning type is known which scans the exposure illumination light (energy beam) in a predetermined scanning direction while keeping the mask and the substrate substantially stationary, thereby forming a predetermined pattern on the substrate. Scanning exposure device (for example, see Patent Document 1).

於上述專利文獻1中記載之曝光裝置，為修正基板上之曝光對象區域與光罩之位置誤差，係一邊使投影光學系往與曝光時之掃描方向相反方向移動、一邊透過投影光學系以對準顯微鏡進行基板上及光罩上之標記之測量（對準測量），根據該測量結果修正基板與光罩之位置誤差。此處，由於係透過投影光學系測量基板上之對準標記，因此對準動作與曝光動作係依序（serially）實施，欲抑制所有基板之曝光處理所需之處理時間（生產時間）是非常困難的。 先行技術文獻 The exposure device described in the above-mentioned Patent Document 1 corrects the positional error between the exposure target area on the substrate and the photomask by moving the projection optical system in the opposite direction to the scanning direction during exposure, while aligning the projection optical system with the photomask. The quasi-microscope measures the marks on the substrate and the photomask (alignment measurement), and corrects the positional error between the substrate and the photomask based on the measurement results. Here, since the alignment marks on the substrate are measured through the projection optical system, the alignment action and the exposure action are performed serially. It is very difficult to suppress the processing time (production time) required for the exposure processing of all substrates. Difficult. Prior technical documents

[專利文獻1] 日本特開2000－12422號公報[Patent Document 1] Japanese Patent Application Publication No. 2000-12422

用以解決課題之手段means to solve problems

本發明在上述情事下完成，第1觀點之曝光裝置，係透過投影光學系對物體照射照明光，並相對該物體驅動該投影光學系以進行掃描曝光，其具備：標記檢測部，用以進行設在該物體之標記之標記檢測；第1驅動系，係驅動該標記檢測部；第2驅動系，係驅動該投影光學系；以及控制裝置，係以在該投影光學系之驅動前先進行該標記檢測部之驅動之方式控制該第1及第2驅動系。The present invention was completed under the above circumstances. An exposure device according to a first aspect irradiates an object with illumination light through a projection optical system and drives the projection optical system relative to the object to perform scanning exposure. The exposure device includes a mark detection unit for performing scanning exposure. Mark detection of the mark provided on the object; the first drive system drives the mark detection part; the second drive system drives the projection optical system; and the control device is configured to perform the detection before driving the projection optical system. The driving mode of the mark detection part controls the first and second driving systems.

本發明第2觀點之平面顯示器之製造方法，其包含使用本發明之曝光裝置使該物體曝光之動作、以及使曝光後之該物體顯影之動作。A method for manufacturing a flat-panel display according to a second aspect of the present invention includes the steps of exposing the object using the exposure device of the invention, and the step of developing the exposed object.

本發明第3觀點之元件製造方法，其包含使用本發明之曝光裝置使該物體曝光之動作、以及使曝光後之該物體顯影之動作。A device manufacturing method according to a third aspect of the present invention includes an action of exposing the object using the exposure device of the present invention, and an action of developing the exposed object.

本發明第4觀點之曝光方法，係透過投影光學系對物體照射照明光，並相對該物體驅動該投影光學系以進行掃描曝光，其包含：使用標記檢測部進行之設於該物體之標記之標記檢測；使用第1驅動系之該標記檢測部之驅動；使用第2驅動系之該投影光學系之驅動；以及以在該投影光學系之驅動前先進行該標記檢測部之驅動之方式進行該第1及第2驅動系之控制。An exposure method according to a fourth aspect of the present invention irradiates an object with illumination light through a projection optical system, and drives the projection optical system relative to the object to perform scanning exposure, which includes: using a mark detection unit to detect a mark provided on the object Mark detection; using the first drive system to drive the mark detection part; using the second drive system to drive the projection optical system; and performing the drive of the mark detection part before driving the projection optical system. Control of the first and second drive systems.

本發明第5觀點之平面顯示器之製造方法，其包含使用本發明之曝光方法使該物體曝光之動作、以及使曝光後之該物體顯影之動作。A method for manufacturing a flat-panel display according to a fifth aspect of the present invention includes the steps of exposing the object using the exposure method of the invention, and the step of developing the exposed object.

本發明第6觀點之元件製造方法，其包含使用本發明之曝光方法使該物體曝光之動作、以及使曝光後之該物體顯影之動作。A device manufacturing method according to a sixth aspect of the present invention includes an action of exposing the object using the exposure method of the present invention, and an action of developing the exposed object.

《第1實施形態》 以下，使用圖1～圖7（c）說明第1實施形態。 "First Embodiment" Hereinafter, the first embodiment will be described using FIGS. 1 to 7(c).

圖1中顯示了第1實施形態之液晶曝光裝置10的概念圖。液晶曝光裝置10，係以例如用於液晶顯示裝置（平面顯示器）等之矩形（方型）之玻璃基板P（以下，僅簡稱基板P）為曝光對象物之步進掃描（step & scan）方式之投影曝光裝置，所謂的掃描機。FIG. 1 shows a conceptual diagram of the liquid crystal exposure apparatus 10 of the first embodiment. The liquid crystal exposure device 10 is a step & scan method using, for example, a rectangular (square) glass substrate P (hereinafter, simply referred to as the substrate P) used in a liquid crystal display device (flat panel display) as an exposure object. The projection exposure device is a so-called scanner.

液晶曝光裝置10，具有照射作為曝光用能量束之照明光IL的照明系20、與投影光學系40。以下，將與從照明系20透過投影光學系40照射於基板P之照明光IL之光軸平行之方向稱為Z軸方向，並設定在與Z軸正交之平面内彼此正交之X軸及Y軸以進行說明。又，本實施形態之座標系中，Y軸係與重力方向實質平行。因此，XZ平面與水平面實質平行。此外，以繞Z軸之旋轉（傾斜）方向為θz方向進行說明。The liquid crystal exposure device 10 includes an illumination system 20 that irradiates illumination light IL as an exposure energy beam, and a projection optical system 40. Hereinafter, the direction parallel to the optical axis of the illumination light IL irradiated from the illumination system 20 through the projection optical system 40 to the substrate P is called the Z-axis direction, and is set to the X-axis orthogonal to each other in the plane orthogonal to the Z-axis. and Y-axis for illustration. In addition, in the coordinate system of this embodiment, the Y-axis system is substantially parallel to the direction of gravity. Therefore, the XZ plane is essentially parallel to the horizontal plane. In addition, the rotation (tilt) direction about the Z-axis is referred to as the θz direction.

此處，於本實施形態，一片基板P上設定有複數個曝光對象區域（適當的稱區劃區域、或照射（shot）區域來進行說明），於此等複數個照射區域依序轉印光罩圖案。又，本實施形態，雖係針對基板P上設定有4個區劃區域之情形（所謂取4面之情形）進行說明，但區劃區域之數量不限定於此，可適當變更。Here, in this embodiment, a plurality of exposure target areas (appropriately referred to as divisional areas or shot areas will be described) are set on one substrate P, and the masks are sequentially transferred to these plurality of shot areas. pattern. In addition, this embodiment describes the case where four divided areas are set on the substrate P (the so-called case of taking four sides). However, the number of divided areas is not limited to this and can be changed appropriately.

又，於液晶曝光裝置10，雖係進行所謂的步進掃描方式之曝光動作，但於掃描曝光動作時，光罩M及基板P實質為靜止狀態，而照明系20及投影光學系40（照明光IL）相對光罩M及基板P分別於X軸方向（適當的稱掃描方向）以長行程移動（參照圖1之白箭頭）。相對於此，於為了變更曝光對象之區劃區域而進行之步進動作時，光罩M於X軸方向以既定行程步進移動，基板P於Y軸方向以既定行程步進移動（分別參照圖1之黑箭頭）。In addition, although the liquid crystal exposure device 10 performs an exposure operation of a so-called step scanning method, during the scanning exposure operation, the mask M and the substrate P are substantially stationary, and the illumination system 20 and the projection optical system 40 (illumination The light IL) moves with a long stroke in the X-axis direction (appropriately called the scanning direction) relative to the mask M and the substrate P (refer to the white arrow in Figure 1). On the other hand, during the stepping operation to change the divided area of the exposure target, the mask M moves step by step with a predetermined stroke in the X-axis direction, and the substrate P moves step by step with the predetermined stroke in the Y-axis direction (refer to Figs. 1 black arrow).

圖2中，顯示了統籌控制液晶曝光裝置10之構成各部之主控制裝置90之輸出入關係的方塊圖。如圖2所示，液晶曝光裝置10具備照明系20、光罩載台裝置30、投影光學系40、基板載台裝置50、對準系60等。FIG. 2 is a block diagram showing the input-output relationship of the main control device 90 that collectively controls each component of the liquid crystal exposure device 10 . As shown in FIG. 2 , the liquid crystal exposure apparatus 10 includes an illumination system 20 , a mask stage device 30 , a projection optical system 40 , a substrate stage device 50 , an alignment system 60 and the like.

照明系20，具備包含照明光IL（參照圖1）之光源（例如，水銀燈）等之照明系本體22。於掃描曝光動作時，由主控制裝置90控制例如包含線性馬達等之驅動系24，據以將照明系本體22於X軸方向以既定長行程掃描驅動。主控制裝置90，透過例如包含線性編碼器等之測量系26求出照明系本體22之X軸方向之位置資訊，根據該位置資訊進行照明系本體22之位置控制。於本實施形態中，作為照明光IL，係使用例如g線、h線、i線等。The illumination system 20 includes an illumination system body 22 including a light source (for example, a mercury lamp) containing illumination light IL (see FIG. 1 ). During the scanning exposure operation, the main control device 90 controls the driving system 24 including, for example, a linear motor, thereby scanning and driving the illumination system body 22 in the X-axis direction with a predetermined long stroke. The main control device 90 obtains the position information of the lighting system body 22 in the X-axis direction through the measurement system 26 including, for example, a linear encoder, and performs position control of the lighting system body 22 based on the position information. In this embodiment, as the illumination light IL, for example, g line, h line, i line, etc. are used.

光罩載台裝置30具備保持光罩M之載台本體32。載台本體32，可藉由例如包含線性馬達等之驅動系34於X軸方向及Y軸方向適當的步進移動。於X軸方向為變更曝光對象之區劃區域的步進動作時，主控制裝置90藉由控制驅動系34，將載台本體32步進驅動於X軸方向。又，如後所述，於Y軸方向為變更曝光對象之區劃區域内進行掃描曝光之區域（位置）的步進動作時，主控制裝置90藉由控制驅動系34，將載台本體32步進驅動於Y軸方向。驅動系34，能在後述對準動作時將光罩M適當的微幅驅動於XY平面内之3自由度（X、Y、θz）方向。光罩M之位置資訊，例如以包含線性編碼器等之測量系36加以求出。The mask stage device 30 includes a stage body 32 that holds the mask M. The stage body 32 can be moved stepwise appropriately in the X-axis direction and the Y-axis direction by a drive system 34 including, for example, a linear motor. When the step movement in the X-axis direction is to change the divided area of the exposure object, the main control device 90 controls the drive system 34 to step-drive the stage body 32 in the X-axis direction. In addition, as will be described later, when performing the step operation of the area (position) of the scanning exposure within the divisional area for changing the exposure target in the Y-axis direction, the main control device 90 controls the drive system 34 to move the stage body 32 steps The forward drive is in the Y-axis direction. The drive system 34 can drive the mask M in the three degrees of freedom (X, Y, θz) directions in the XY plane with appropriate micro-width during the alignment operation described below. The position information of the mask M is obtained, for example, using a measurement system 36 including a linear encoder or the like.

投影光學系40，具備包含以等倍系在基板P（參照圖1）上形成光罩圖案之正立正像之光學系等的投影系本體42。投影系本體42配置在基板P與光罩M之間形成之空間内（參照圖1）。於掃描曝光動作時，主控制裝置90藉由例如控制包含線性馬達等之驅動系44，以和照明系本體22同步之方式，於X軸方向以既定長行程掃描驅動投影系本體42。主控制裝置90，透過例如包含線性編碼器等之測量系46求出投影系本體42於X軸方向之位置資訊，根據該位置資訊進行投影系本體42之位置控制。The projection optical system 40 includes a projection system main body 42 including an optical system and the like for forming an erect image of a mask pattern on the substrate P (see FIG. 1 ) at equal magnification. The projection system body 42 is arranged in the space formed between the substrate P and the photomask M (see FIG. 1 ). During the scanning exposure operation, the main control device 90 controls the driving system 44 including a linear motor, etc., to scan and drive the projection system body 42 with a predetermined long stroke in the X-axis direction in synchronization with the lighting system body 22 . The main control device 90 obtains the position information of the projection system body 42 in the X-axis direction through the measurement system 46 including, for example, a linear encoder, and performs position control of the projection system body 42 based on the position information.

回到圖1，於液晶曝光裝置10，當以來自照明系20之照明光IL照明光罩M上之照明區域IAM時，以通過光罩M之照明光IL，透過投影光學系40將該照明區域IAM内之光罩圖案之投影像（部分正立像），形成在基板P上與照明區域IAM共軛之照明光IL之照射區域（曝光區域IA）。並相對光罩M及基板P，使照明光IL（照明區域IAM及曝光區域IA）相對移動於掃描方向據以進行掃描曝光動作。亦即，於液晶曝光裝置10，係以照明系20及投影光學系40在基板P上生成光罩M之圖案，藉由照明光IL使基板P上之感應層（抗蝕層）之曝光，於基板P上形成該圖案。Returning to FIG. 1 , in the liquid crystal exposure device 10 , when the illumination area IAM on the mask M is illuminated with the illumination light IL from the illumination system 20 , the illumination light IL passing through the mask M is used to illuminate the illumination through the projection optical system 40 The projected image (partial erect image) of the mask pattern in the area IAM is formed on the substrate P and is the irradiation area (exposure area IA) of the illumination light IL that is conjugate to the illumination area IAM. And with respect to the mask M and the substrate P, the illumination light IL (illumination area IAM and exposure area IA) is relatively moved in the scanning direction to perform the scanning exposure operation. That is, in the liquid crystal exposure device 10, the illumination system 20 and the projection optical system 40 are used to generate a pattern of the mask M on the substrate P, and the sensing layer (resist layer) on the substrate P is exposed by the illumination light IL. The pattern is formed on the substrate P.

此處，於本實施形態，以照明系20在光罩M上生成之照明區域IAM，包含於Y軸方向分離之一對矩形區域。一個矩形區域之Y軸方向長度，係設定為光罩M之圖案面之Y軸方向長度（亦即設定在基板P上之各區劃區域之Y軸方向長度）之例如1／4。又，一對矩形區域間之間隔亦同樣的設定為光罩M之圖案面之Y軸方向之長度之例如1／4。因此，生成在基板P上之曝光區域IA，亦同樣的包含於Y軸方向分離之一對矩形區域。本實施形態，為將光罩M之圖案完全地轉印至基板P，雖須針對一區劃區域進行二次掃描曝光動作，但具有可使照明系本體22及投影系本體42小型化之優點。關於掃描曝光動作之具體例，留待後敘。Here, in this embodiment, the illumination area IAM generated on the mask M by the illumination system 20 is included in a pair of rectangular areas separated in the Y-axis direction. The Y-axis direction length of a rectangular area is set to, for example, 1/4 of the Y-axis direction length of the pattern surface of the mask M (that is, the Y-axis direction length of each partition area set on the substrate P). In addition, the distance between a pair of rectangular regions is similarly set to, for example, 1/4 of the length of the pattern surface of the mask M in the Y-axis direction. Therefore, the exposure area IA generated on the substrate P also includes a pair of rectangular areas separated in the Y-axis direction. In this embodiment, in order to completely transfer the pattern of the mask M to the substrate P, although a second scanning exposure operation is required for a divided area, it has the advantage that the illumination system body 22 and the projection system body 42 can be miniaturized. Specific examples of the scanning exposure operation will be described later.

基板載台裝置50，具被保持基板P之背面（與曝光面相反之面）之載台本體52。回到圖2，於Y軸方向變更曝光對象之區劃區域的步進動作時，主控制裝置90藉由控制例如包含線性馬達等之驅動系54，將載台本體52往Y軸方向步進驅動。驅動系54，可在後述之基板對準動作時將基板P微幅驅動於XY平面内之3自由度（X、Y、θz）方向。基板P（載台本體52）之位置資訊，係以例如包含線性編碼器等之測量系56加以求出。The substrate stage device 50 has a stage body 52 that holds the back surface (the surface opposite to the exposure surface) of the substrate P. Returning to FIG. 2 , when changing the step action of the divided area of the exposure object in the Y-axis direction, the main control device 90 controls the drive system 54 including, for example, a linear motor to step-drive the stage body 52 in the Y-axis direction. . The drive system 54 can slightly drive the substrate P in the three degrees of freedom (X, Y, θz) directions in the XY plane during the substrate alignment operation described below. The position information of the substrate P (stage body 52 ) is obtained using a measurement system 56 including, for example, a linear encoder.

回到圖1，對準系60例如具備2個對準顯微鏡62、64。對準顯微鏡62、64，被配置在基板P與光罩M之間形成之空間内（於Z軸方向之基板P與光罩M間之位置），檢測形成在基板P之對準標記Mk（以下，僅稱標記Mk）、及形成在光罩M之標記（未圖示）。本實施形態中，標記Mk在各區劃區域之四個角落附近分別形成有1個（1個區劃區域、例如4個），光罩M之標記，透過投影光學系40形成在與標記Mk對應之位置。又，標記Mk及光罩M之標記之數量及位置，不限定於此，可適當變更。此外，於各圖面中，為便於理解，標記Mk係顯示的較實際大。Returning to FIG. 1 , the alignment system 60 includes, for example, two alignment microscopes 62 and 64 . Alignment microscopes 62 and 64 are arranged in the space formed between the substrate P and the mask M (the position between the substrate P and the mask M in the Z-axis direction), and detect the alignment mark Mk formed on the substrate P ( Hereinafter, only the mark Mk) and the mark formed on the photomask M (not shown) are referred to. In this embodiment, one mark Mk is formed near the four corners of each divisional area (one divisional area, for example, four). The mark of the mask M is formed on the surface corresponding to the mark Mk through the projection optical system 40. Location. In addition, the number and position of the marks Mk and the mask M are not limited to this and can be changed appropriately. In addition, in each drawing, the mark Mk is displayed larger than actual for ease of understanding.

其中之一對準顯微鏡62配置在投影系本體42之＋X側，另一對準顯微鏡64則配置在投影系本體42之－X側。對準顯微鏡62、64，分別具有在Y軸方向分離之一對檢測視野（檢測區域），可同時檢測一個區劃區域内於Y軸方向分離之例如2個標記Mk。One of the alignment microscopes 62 is disposed on the +X side of the projection system body 42 , and the other alignment microscope 64 is disposed on the −X side of the projection system body 42 . The alignment microscopes 62 and 64 each have a pair of detection fields of view (detection areas) separated in the Y-axis direction, and can simultaneously detect, for example, two marks Mk separated in the Y-axis direction within a division area.

又，對準顯微鏡62、64，可同時（換言之，在不改變對準顯微鏡62、64之位置之情形下）檢測形成在光罩M之標記、與形成在基板P之標記Mk。主控制裝置90，例如在光罩M每次進行X步進動作、或基板P進行Y步進動作時，求出形成在光罩M之標記與形成在基板P之標記Mk之相對位置偏移資訊，並進行基板P與光罩M在沿XY平面之方向之相對的定位，以修正該位置偏移（抵消、或減少）。又，對準顯微鏡62、64，係由檢測（觀察）光罩M之標記的光罩檢測部、與檢測（觀察）基板P之標記Mk的基板檢測部藉由共通之箱體等一體構成，透過該共通之箱體由驅動系66加以驅動。或者，亦可以是光罩檢測部與基板檢測部由個別之箱體等構成，此場合，最好是構成為例如光罩檢測部與基板檢測部可藉由實質共通之驅動系66以同等之動作特性來進行移動光罩M。In addition, the alignment microscopes 62 and 64 can detect the mark Mk formed on the mask M and the mark Mk formed on the substrate P at the same time (in other words, without changing the positions of the alignment microscopes 62 and 64). The main control device 90 determines the relative positional deviation between the mark Mk formed on the mask M and the mark Mk formed on the substrate P every time the mask M performs the X step motion or the substrate P performs the Y step motion, for example. Information is obtained, and the relative positioning of the substrate P and the mask M in the direction along the XY plane is performed to correct (offset, or reduce) the positional offset. In addition, the alignment microscopes 62 and 64 are integrally composed of a common box and the like, including a mask detection unit that detects (observes) the mark on the mask M, and a substrate detection unit that detects (observes) the mark Mk on the substrate P. It is driven by the driving system 66 through the common box. Alternatively, the mask detection unit and the substrate detection unit may be configured by separate boxes or the like. In this case, it is preferably configured such that the mask detection unit and the substrate detection unit can be driven in the same manner through a substantially common drive system 66 . Move the mask M according to the action characteristics.

主控制裝置90（參照圖2），係藉由控制例如包含線性馬達等之驅動系66，將對準顯微鏡62、64以既定長行程分別獨立的驅動於X軸方向。又，主控制裝置90，透過例如包含線性編碼器等之測量系68求出對準顯微鏡62、64各自之X軸方向之位置資訊，根據該位置資訊分別獨立的進行對準顯微鏡62、64之位置控制。此外，投影系本體42及對準顯微鏡62、64，其Y軸方向之位置幾乎相同，彼此之可移動範圍部分重複。The main control device 90 (see FIG. 2 ) controls the drive system 66 including, for example, a linear motor to independently drive the alignment microscopes 62 and 64 in the X-axis direction with a predetermined long stroke. In addition, the main control device 90 obtains the position information in the X-axis direction of the alignment microscopes 62 and 64 through the measurement system 68 including, for example, a linear encoder, and independently aligns the microscopes 62 and 64 based on the position information. Position control. In addition, the positions of the projection system body 42 and the alignment microscopes 62 and 64 in the Y-axis direction are almost the same, and their movable ranges partially overlap.

此處，對準系60之對準顯微鏡62、64與上述投影光學系40之投影系本體42雖係物理上（機械上）獨立（分離）的要素，由主控制裝置90（參照圖2）以彼此獨立之方式進行驅動（速度、及位置）控制，但驅動對準顯微鏡62、64之驅動系66與驅動投影系本體42之驅動系44，於X軸方向之驅動係共用例如線性馬達、線性導件等之一部分，對準顯微鏡62、64及投影系本體42之驅動特性、或由主控制裝置90進行之控制特性是實質同等的。Here, although the alignment microscopes 62 and 64 of the alignment system 60 and the projection system body 42 of the projection optical system 40 are physically (mechanically) independent (separated) elements, they are controlled by the main control device 90 (see FIG. 2 ) The drive (speed, and position) control is performed independently of each other, but the drive system 66 that drives the alignment microscopes 62 and 64 and the drive system 44 that drives the projection system body 42 share the same drive system in the X-axis direction, such as a linear motor, The drive characteristics of the linear guides and other parts of the alignment microscopes 62 and 64 and the projection system body 42, or the control characteristics of the main control device 90 are substantially the same.

具體的舉一例而言，在例如以動圈式線性馬達將對準顯微鏡62、64、投影系本體42分別驅動於X軸方向之情形時，上述驅動系66與驅動系44係共用固定子磁性體（例如永久磁石等）單元。相對於此，可動子線圈單元則係對準顯微鏡62、64、投影系本體42分別獨立具有，主控制裝置90（參照圖2）藉由個別進行對該線圈單元之電力供應，獨立的控制對準顯微鏡62、64往X軸方向之驅動（速度、及位置）、與投影系本體42往X軸方向之驅動（速度、及位置）。因此，主控制裝置90可變更（任意變更）於X軸方向之對準顯微鏡62、64與投影系本體42之間隔（距離）。此外，主控制裝置90，亦可於X軸方向使對準顯微鏡62、64與投影系本體42以不同的速度移動。To give a specific example, when the alignment microscopes 62 and 64 and the projection system body 42 are respectively driven in the X-axis direction by a moving coil linear motor, the drive system 66 and the drive system 44 share the magnetic stator. body (such as permanent magnet, etc.) unit. In contrast, the movable sub-coil units are independently provided for the alignment microscopes 62 and 64 and the projection system body 42. The main control device 90 (see FIG. 2) independently controls the movable sub-coil units by supplying power to the coil units individually. The quasi-microscopes 62 and 64 are driven (speed, and position) in the X-axis direction, and the projection system body 42 is driven (speed, and position) in the X-axis direction. Therefore, the main control device 90 can change (arbitrarily change) the distance (distance) between the alignment microscopes 62 and 64 and the projection system body 42 in the X-axis direction. In addition, the main control device 90 can also move the alignment microscopes 62 and 64 and the projection system body 42 at different speeds in the X-axis direction.

主控制裝置90（參照圖2），使用對準顯微鏡62（或對準顯微鏡64）檢測形成在基板P上之複數個標記Mk，根據該檢測結果（複數個標記Mk之位置資訊）以公知之全晶圓加強型對準（EGA）方式，算出形成有檢測對象之標記Mk之區劃區域之排列資訊（包含與區劃區域之位置（座標值）、形狀等相關之資訊）。The main control device 90 (refer to FIG. 2 ) uses the alignment microscope 62 (or the alignment microscope 64 ) to detect the plurality of marks Mk formed on the substrate P, and based on the detection results (position information of the plurality of marks Mk), a known The full-wafer enhanced alignment (EGA) method calculates the arrangement information of the area where the mark Mk of the detection object is formed (including information related to the position (coordinate value), shape, etc. of the area).

具體而言，於掃描曝光動作中，在投影系本體42係被驅動於＋X方向時，主控制裝置90（參照圖2），於該掃描曝光動作之前，先使用配置在投影系本體42之＋X側之對準顯微鏡62進行複數個標記Mk之位置檢測，以算出曝光對象之區劃區域之排列資訊。又，於掃描曝光動作中，在投影系本體42係被驅動於－X方向時，於該掃描曝光動作之前，先使用配置在投影系本體42之－X側之對準顯微鏡64進行複數個標記Mk之位置檢測，以算出曝光對象之區劃區域之排列資訊。主控制裝置90根據算出之排列資訊，一邊進行基板P之XY平面内之3自由度方向之慎密的定位（基板對準動作）、一邊適當控制照明系20及投影光學系40進行對對象區劃區域之掃描曝光動作（光罩圖案之轉印）。Specifically, during the scanning exposure operation, when the projection system body 42 is driven in the +X direction, the main control device 90 (see FIG. 2 ) first uses the +X position of the projection system body 42 before the scanning exposure operation. The alignment microscope 62 on the side detects the positions of the plurality of marks Mk to calculate the arrangement information of the divided areas of the exposure object. In addition, during the scanning exposure operation, when the projection system body 42 is driven in the -X direction, before the scanning exposure operation, the alignment microscope 64 arranged on the -X side of the projection system body 42 is used to perform a plurality of marks. Mk's position detection is used to calculate the arrangement information of the exposed areas. Based on the calculated arrangement information, the main control device 90 performs precise positioning (substrate alignment operation) in the three-degree-of-freedom direction of the substrate P in the XY plane, and appropriately controls the lighting system 20 and the projection optical system 40 to divide the object. Scanning and exposure action of area (transfer of mask pattern).

其次，說明用以求出投影光學系40具有之投影系本體42之位置資訊的測量系46（參照圖2）、及用以求出對準系60具有之對準顯微鏡62之位置資訊的測量系68之具體構成。Next, the measurement system 46 (see FIG. 2 ) for obtaining the position information of the projection system body 42 of the projection optical system 40 and the measurement system for obtaining the position information of the alignment microscope 62 of the alignment system 60 will be described. It is the specific composition of 68.

如圖3所示，液晶曝光裝置10具有用以將投影系本體42導向掃描方向之導件80。導件80由與掃描方向平行延伸之構件構成。導件80亦具有引導對準顯微鏡62往掃描方向之移動的功能。又，圖7中，導件80雖係圖示在光罩M與基板P之間，但實際上，導件80係於Y軸方向配置在避開照明光IL之光路的位置。As shown in FIG. 3 , the liquid crystal exposure device 10 has a guide 80 for guiding the projection system body 42 in the scanning direction. The guide 80 is composed of a member extending parallel to the scanning direction. The guide 80 also has the function of guiding the alignment microscope 62 to move in the scanning direction. Furthermore, in FIG. 7 , the guide 80 is shown between the mask M and the substrate P. However, in fact, the guide 80 is arranged in a position avoiding the optical path of the illumination light IL in the Y-axis direction.

於導件80，固定有至少包含以和掃描方向平行之方向（X軸方向）為週期方向之反射型繞射光柵的標尺82。又，投影系本體42具有與標尺82對向配置之讀頭84。於本實施形態，形成有藉由上述標尺82與讀頭84構成用以求出投影系本體42之位置資訊之測量系46（參照圖2）的編碼器系統。此外，對準顯微鏡62、64，分別具有與標尺82對向配置之讀頭86（圖3中，對準顯微鏡64未圖示）。於本實施形態，形成有藉由上述標尺82與讀頭86構成用以求出對準顯微鏡62、64之位置資訊之測量系68（參照圖2）的編碼器系統。此處，讀頭84、86可分別對標尺82照射編碼器測量用光束，並接收透過標尺82之光束（於標尺82之反射光束），根據該受光結果輸出對標尺82之相對位置資訊。A scale 82 including at least a reflective diffraction grating having a periodic direction in a direction parallel to the scanning direction (X-axis direction) is fixed to the guide 80 . Furthermore, the projection system body 42 has a reading head 84 arranged to face the scale 82 . In this embodiment, an encoder system is formed in which the scale 82 and the read head 84 constitute a measurement system 46 (see FIG. 2 ) for obtaining position information of the projection system body 42 . In addition, the alignment microscopes 62 and 64 each have a read head 86 arranged to face the scale 82 (in FIG. 3 , the alignment microscope 64 is not shown). In this embodiment, an encoder system is formed in which the scale 82 and the read head 86 constitute a measurement system 68 (see FIG. 2 ) for obtaining position information of the alignment microscopes 62 and 64. Here, the read heads 84 and 86 can respectively illuminate the encoder measurement beam on the scale 82, receive the beam that passes through the scale 82 (the beam reflected on the scale 82), and output relative position information to the scale 82 based on the light reception result.

如以上所述，於本實施形態，標尺82構成用以求出投影系本體42之位置資訊的測量系46（參照圖2）、亦構成用以求出對準顯微鏡62、64之位置資訊的測量系68（參照圖2）。亦即，投影系本體42與對準顯微鏡62、64係根據以形成在標尺82之繞射光柵所設定之共通的座標系（測長軸）來進行位置控制。又，用以驅動投影系本體42之驅動系44（參照圖2）、及用以驅動對準顯微鏡62、64之驅動系66（參照圖2），其要素可一部分共通、亦可以完全獨立之要素構成。As described above, in this embodiment, the scale 82 constitutes the measurement system 46 (see FIG. 2 ) for obtaining positional information of the projection system body 42 and also constitutes a measuring system for obtaining positional information of the alignment microscopes 62 and 64 . Measurement system 68 (see Figure 2). That is, the projection system body 42 and the alignment microscopes 62 and 64 perform position control based on a common coordinate system (length measuring axis) set by the diffraction grating formed on the scale 82 . In addition, the driving system 44 (see FIG. 2 ) for driving the projection system body 42 and the driving system 66 (see FIG. 2 ) for driving the alignment microscopes 62 and 64 may have some elements in common or may be completely independent. Element composition.

又，構成上述測量系46、68之編碼器系統，可以是測長軸僅為例如X軸方向（掃描方向）之線性（1DOF）編碼器系統、亦可具有多數測長軸。例如，可藉由將讀頭84、86於Y軸方向以既定間隔配置複數個，據以求出投影系本體42、對準顯微鏡62、64之θz方向之旋轉量。又，亦可以是於標尺82形成XY2維繞射光柵，於X、Y、θz方向之3自由度方向具有測長軸之3DOF編碼器系統。再者，亦可作為讀頭84、86使用複數個除繞射光柵之週期方向外亦能進行與標尺面正交之方向之測長之公知的2維讀頭，以求出投影系本體42、對準顯微鏡62、64之6自由度方向之位置資訊。In addition, the encoder system constituting the above-mentioned measurement systems 46 and 68 may be a linear (1 DOF) encoder system in which the length measuring axis is only in the X-axis direction (scanning direction), for example, or may have a plurality of length measuring axes. For example, by arranging a plurality of read heads 84 and 86 at predetermined intervals in the Y-axis direction, the amount of rotation in the θz direction of the projection system body 42 and the alignment microscopes 62 and 64 can be obtained. Alternatively, an XY 2-dimensional diffraction grating is formed on the scale 82, and a 3DOF encoder system having length measuring axes in three degrees of freedom in the X, Y, and θz directions may be used. Furthermore, a plurality of known two-dimensional reading heads that can measure length in a direction orthogonal to the scale plane in addition to the periodic direction of the diffraction grating can also be used as the reading heads 84 and 86 to obtain the projection system body 42 , align the position information of the 6-degree-of-freedom directions of the microscopes 62 and 64.

其次，使用圖4（a）～圖7（c）說明掃描曝光動作時之液晶曝光裝置10之動作之一例。以下之曝光動作（包含對準測量動作）係在主控制裝置90（圖4（a）～圖7（c）中未圖示。參照圖2）之管理下進行。Next, an example of the operation of the liquid crystal exposure device 10 during the scanning exposure operation will be described using FIGS. 4(a) to 7(c). The following exposure operations (including alignment measurement operations) are performed under the management of the main control device 90 (not shown in FIGS. 4(a) to 7(c) . See FIG. 2 ).

本實施形態中，曝光順序最先之區劃區域（以下，稱第1照射區域S 1）係設定在基板P之－X側且－Y側。又，賦予在基板P上之區劃區域之符號S 2～S 4，係分別代表曝光順序為第2～4個之照射區域。 In this embodiment, the first divided area in the exposure sequence (hereinafter referred to as the first irradiation area S 1 ) is set on the −X side and the −Y side of the substrate P. In addition, the symbols S 2 to S 4 given to the divided areas on the substrate P represent the second to fourth irradiation areas in the exposure order, respectively.

如圖4（a）所示，於曝光開始前，投影系本體42及對準顯微鏡62、64之各個，係俯視下配置在設定於第1照射區域S 1之－X側之初期位置。此時，投影系本體42與對準顯微鏡62、64係於X軸方向彼此近接配置。又，對準顯微鏡62之檢測視野之Y軸方向位置與形成在第1及第4照射區域S 1、S 4内之標記Mk之Y軸方向位置幾乎一致。 As shown in FIG. 4(a) , before the exposure is started, the projection system body 42 and the alignment microscopes 62 and 64 are each arranged at an initial position set on the −X side of the first irradiation area S 1 in a plan view. At this time, the projection system body 42 and the alignment microscopes 62 and 64 are arranged close to each other in the X-axis direction. In addition, the Y-axis direction position of the detection field of view of the alignment microscope 62 almost coincides with the Y-axis direction position of the mark Mk formed in the first and fourth irradiation areas S 1 and S 4 .

接著，主控制裝置90，如圖4（b）所示，將對準顯微鏡62驅動於＋X方向，檢測形成在第1照射區域S 1内之例如4個標記Mk中、形成在－X側端部近旁之例如2個標記Mk（參照圖4（b）中之粗線圓標記。以下同）。又，主控制裝置90，如圖4（c）所示，進一步將對準顯微鏡62驅動於＋X方向，以檢測形成在第1照射區域S 1内之例如4個標記Mk中、形成在＋X側端部近旁之例如2個標記Mk。又，圖4（b）中，投影系本體42雖係停止中，但可在對準顯微鏡62開始進行第1照射區域S 1内之標記Mk之檢測後、正在進行該標記Mk之檢測中，例如在檢測－X側之標記Mk後移動至＋X側之標記Mk之期間中（具體而言，在檢測＋X側之標記Mk之前一刻），開始投影系本體42之加速。 Next, as shown in FIG. 4(b) , the main control device 90 drives the alignment microscope 62 in the +X direction, and detects, among the four marks Mk formed in the first irradiation area S 1 , those formed at the −X side end. For example, there are two marks Mk near the part (refer to the thick circle marks in Figure 4(b). The same applies to the following). In addition, as shown in FIG. 4(c) , the main control device 90 further drives the alignment microscope 62 in the +X direction to detect, for example, four marks Mk formed in the first irradiation area S 1 , which are formed on the +X side. For example, there are 2 marks Mk near the end. In addition, in FIG. 4(b) , although the projection system body 42 is stopped, the detection of the mark Mk in the first irradiation area S 1 is started after the alignment microscope 62 is started. For example, while the mark Mk on the -X side is detected and then moved to the mark Mk on the +X side (specifically, immediately before the mark Mk on the +X side is detected), the acceleration of the projection system body 42 is started.

主控制裝置90，根據形成在上述第1照射區域S 1内之例如4個標記Mk之檢測結果（位置資訊），求出第1照射區域S 1之排列資訊。主控制裝置90，如圖4（d）所示，一邊根據第1照射區域S 1之該排列資訊進行基板P之XY平面内之3自由度方向之精密定位（基板對準動作）、一邊將投影系本體42與照明系20之照明系本體22（圖4（d）中未圖示。參照圖1）同步驅動於＋X方向，以進行對第1照射區域S 1之第1次的掃描曝光。 The main control device 90 obtains the arrangement information of the first irradiation area S 1 based on the detection results (position information) of, for example, four marks Mk formed in the first irradiation area S 1 . As shown in FIG. 4(d) , the main control device 90 performs precise positioning (substrate alignment operation) in the three-degree-of-freedom direction of the substrate P in the XY plane based on the arrangement information of the first irradiation area S 1 . The projection system body 42 and the lighting system body 22 of the lighting system 20 (not shown in Figure 4(d). Refer to Figure 1) are synchronously driven in the +X direction to perform the first scanning exposure of the first irradiation area S1 .

又，主控制裝置90，與對第1照射區域S 1之第1次掃描曝光動作之開始並行，使用對準顯微鏡62檢測形成在第4照射區域S 4（第1照射區域S 1之＋X側之區劃區域）内之例如4個標記Mk中、形成在－X側端部近旁之例如2個標記Mk。 In addition, in parallel with the start of the first scanning exposure operation for the first irradiation area S 1 , the main control device 90 uses the alignment microscope 62 to detect the area formed in the fourth irradiation area S 4 (the +X side of the first irradiation area S 1 Among, for example, four marks Mk within the divided area), for example, two marks Mk are formed near the -X side end.

主控制裝置90，可根據新取得之第4照射區域S 4内之例如2個標記Mk之檢測結果、與之前取得（儲存在未圖示之記憶體裝置内）之第1照射區域S 1内之例如4個標記之檢測結果，進行EGA計算以更新第1照射區域S 1之排列資訊。主控制裝置90，可一邊根據此經更新之排列資訊適當進行基板P之XY平面内之3自由度方向之精密定位、一邊續行第1照射區域S 1之掃描曝光動作。為求出第1照射區域S 1之排列資訊而使用第4照射區域S 4内之標記位置資訊，與僅根據設在第1照射區域S 1之4個標記Mk來求出排列資訊相較，可求出就廣範圍考慮了統計上傾向之排列資訊，而能提升關於第1照射區域S 1之對準精度。 The main control device 90 can be based on the detection results of, for example, two markers Mk in the newly obtained fourth irradiation area S 4 and the previously obtained (stored in a memory device not shown) in the first irradiation area S 1 For example, based on the detection results of four markers, EGA calculation is performed to update the arrangement information of the first irradiation area S 1 . The main control device 90 can continue the scanning exposure operation of the first irradiation area S 1 while appropriately performing precise positioning in the three-degree-of-freedom direction in the XY plane of the substrate P based on the updated arrangement information. In order to obtain the arrangement information of the first irradiation area S 1 , using the mark position information in the fourth irradiation area S 4 is compared with obtaining the arrangement information based only on the four markers Mk provided in the first irradiation area S 1 . Arrangement information that takes into account statistical tendencies over a wide range can be obtained, and the alignment accuracy with respect to the first irradiation area S 1 can be improved.

又，主控制裝置90，如圖5（a）所示，一邊將投影系本體42驅動於＋X方向以進行掃描曝光動作、一邊進一步將對準顯微鏡62驅動於＋X方向以檢測形成在第4照射區域S 4内之例如4個標記Mk中、形成在＋X側端部近旁之例如2個標記Mk。主控制裝置90，可根據新取得之第4照射區域S 4内之例如2個標記Mk之檢測結果、與之前取得之標記Mk（本例中，係第1照射區域S 1内之例如4個標記Mk、及第4照射區域S 4内之例如2個標記Mk）之檢測結果進行EGA計算，以更新第1照射區域S 1之排列資訊。主控制裝置90，可一邊根據此經更新之排列資訊進行基板P之XY平面内之3自由度方向之精密定位、一邊續行第1照射區域S 1之掃描曝光動作。 In addition, as shown in FIG. 5(a) , the main control device 90 drives the projection system body 42 in the +X direction to perform the scanning exposure operation, and further drives the alignment microscope 62 in the +X direction to detect the light beam formed in the fourth irradiation. Among the four marks Mk in the area S 4 , for example, two marks Mk are formed near the +X side end. The main control device 90 can, based on the newly acquired detection results of, for example, two markers Mk in the fourth irradiation area S 4 , and the previously acquired marks Mk (in this example, for example, four markers Mk in the first irradiation area S 1 The detection results of the mark Mk and, for example, two marks Mk) in the fourth irradiation area S 4 are subjected to EGA calculation to update the arrangement information of the first irradiation area S 1 . The main control device 90 can continue the scanning exposure operation of the first irradiation area S 1 while accurately positioning the substrate P in the three-degree-of-freedom direction in the XY plane based on the updated arrangement information.

如以上所述，於本實施形態，可使用相對投影系本體42配置在掃描方向前方（＋X方向）之對準顯微鏡62，同時（並行）實施檢測較曝光區域IA（照明光IL）形成在掃描方向前方（＋X方向）之標記Mk的動作、與使投影系本體42掃描於＋X方向的掃描曝光動作中之至少一部分。如此，即能縮短包含對準動作與掃描曝光動作之一連串動作所需之時間。此外，主控制裝置90，可在每次依序測量例如設在不同位置之標記Mk時適當進行EGA計算，以更新曝光對象之區劃區域之排列資訊。據此，能提升曝光對象之區劃區域之對準精度。As described above, in this embodiment, the alignment microscope 62 arranged in front of the projection system body 42 in the scanning direction (+X direction) can be used to simultaneously (in parallel) detect the exposure area IA (illumination light IL) formed in the scanning direction. At least part of the movement of the mark Mk in the forward direction (+X direction) and the scanning exposure movement of the projection system body 42 in the +X direction. In this way, the time required for a series of actions including the alignment action and the scanning exposure action can be shortened. In addition, the main control device 90 can appropriately perform EGA calculations each time the markers Mk located at different positions are sequentially measured to update the arrangement information of the divided areas of the exposure objects. Accordingly, the alignment accuracy of the divided areas of the exposure object can be improved.

又，主控制裝置90，在為進行掃描曝光動作而將投影系本體42驅動於＋X方向時，可將相對投影系本體42配置在掃描方向後方（－X方向）之對準顯微鏡64，以追循投影系本體42之方式驅動於＋X方向（參照圖5（a）及圖5（b））。此時，主控制裝置90，可使用對準顯微鏡64檢測較曝光區域IA（照明光IL）形成在掃描方向後方（－X方向）之標記Mk，將此檢測結果用於EGA計算。In addition, when the main control device 90 drives the projection system body 42 in the +X direction to perform the scanning exposure operation, the alignment microscope 64 can be arranged behind the projection system body 42 in the scanning direction (-X direction) to track. It is driven in the +X direction in the manner of the projection system body 42 (refer to Figure 5(a) and Figure 5(b)). At this time, the main control device 90 can use the alignment microscope 64 to detect the mark Mk formed behind the exposure area IA (illumination light IL) in the scanning direction (-X direction), and use this detection result for EGA calculation.

如以上所述，本實施形態中，由於光罩M上生成之照明區域IAM（參照圖1）、及基板P上生成之曝光區域IA，係於Y軸方向分離之一對矩形區域，因此以一次掃描曝光動作轉印至基板P之光罩M之圖案像，是形成在於Y軸方向分離之一對延伸於X軸方向之帶狀區域（一個區劃區域之全面積中之一半面積）内。As described above, in this embodiment, since the illumination area IAM (see FIG. 1 ) generated on the mask M and the exposure area IA generated on the substrate P are a pair of rectangular areas separated in the Y-axis direction, they are The pattern image transferred to the mask M of the substrate P by a single scanning exposure operation is formed in a pair of strip-shaped areas separated in the Y-axis direction and extending in the X-axis direction (half of the total area of a divided area).

接著，主控制裝置90，如圖5（b）所示，為進行第1照射區域S 1之第2次（復路）掃描曝光動作，使基板P及光罩M往－Y方向步進移動（參照圖5（b）之黑箭頭）。此時之基板P之步進移動量係一個區劃區域於Y軸方向之長度之例如1／4之長度。此時，在基板P與光罩M往－Y方向之步進移動中，最好是能以基板P與光罩M之相對位置關係不會變化之方式（或、以可修正該相對位置關係之方式）使其步進移動較佳。 Next, as shown in FIG. 5( b ), in order to perform the second (repeated) scanning exposure operation of the first irradiation area S 1 , the main control device 90 moves the substrate P and the mask M stepwise in the −Y direction ( Refer to the black arrow in Figure 5(b)). The step movement amount of the substrate P at this time is, for example, 1/4 of the length of a divided area in the Y-axis direction. At this time, during the stepwise movement of the substrate P and the mask M in the -Y direction, it is best to ensure that the relative positional relationship between the substrate P and the mask M does not change (or in such a way that the relative positional relationship can be corrected). way) to make the step movement better.

本實施形態中，第1照射區域S 1之第2次掃描曝光動作，如圖5（c）所示，係使投影系本體42往－X方向移動來進行。主控制裝置90，將對準顯微鏡64驅動於－X方向，以檢測形成在第1照射區域S 1内之例如＋X側端部近旁之標記Mk（未圖示）。主控制裝置90，一邊根據此對準顯微鏡64之檢測結果及上述第1照射區域S 1之排列資訊進行基板P之XY平面内之3自由度方向之精密定位、一邊進行第1照射區域S 1之第2次掃描曝光動作。據此，如圖5（d）所示，藉由第1次掃描曝光動作轉印之光罩圖案、與藉由第2次掃描曝光動作轉印之光罩圖案即在第1照射區域S 1内接合，光罩M之圖案全體被轉印至第1照射區域S 1。又，對應第1照射區域S 1之第2次掃描曝光之對準動作，由於僅需根據光罩M之標記與基板P之標記Mk之各2點的標記（＋X側標記）測量XY平面内之3自由度（X、Y、θz）方向之位置偏差，因此與第1次對準動作相較，能實質縮短對準所需之時間。 In this embodiment, the second scanning exposure operation of the first irradiation area S 1 is performed by moving the projection system body 42 in the −X direction, as shown in FIG. 5( c ). The main control device 90 drives the alignment microscope 64 in the −X direction to detect a mark Mk (not shown) formed near the +X side end in the first irradiation area S 1 . The main control device 90 performs precise positioning of the 3-degree-of-freedom direction in the XY plane of the substrate P based on the detection results of the alignment microscope 64 and the above-mentioned arrangement information of the first irradiation area S 1 while performing the first irradiation area S 1 The second scanning exposure action. Accordingly, as shown in FIG. 5(d) , the mask pattern transferred by the first scanning exposure operation and the mask pattern transferred by the second scanning exposure operation are in the first irradiation area S 1 By internal bonding, the entire pattern of the mask M is transferred to the first irradiation area S 1 . In addition, the alignment operation corresponding to the second scanning exposure of the first irradiation area S 1 only needs to measure the marks in the XY plane based on the marks of the mask M and the mark Mk of the substrate P at two points each (+ The position deviation in the three degrees of freedom (X, Y, θz) direction can substantially shorten the time required for alignment compared with the first alignment operation.

當對第1照射區域S 1之掃描曝光結束時，主控制裝置90，在為進行對第2照射區域S 2（第1照射區域S 1之＋Y側之區劃區域）之掃描曝光動作而使基板P往－Y方向步進移動後，以和上述對第1照射區域S 1之掃描曝光動作相同之程序進行對第2照射區域S 2之掃描曝光。 When the scanning exposure of the first irradiation area S 1 is completed, the main control device 90 causes the substrate to perform a scanning exposure operation to the second irradiation area S 2 (the +Y-side divided area of the first irradiation area S 1 ). After P moves stepwise in the -Y direction, the second irradiation area S 2 is scanned and exposed in the same procedure as the above-mentioned scanning exposure operation for the first irradiation area S 1 .

亦即，對第2照射區域S 2之第1次掃描曝光動作，如圖6（a）所示，係根據以對準顯微鏡62檢測之第2照射區域S 2、及第3照射區域S 3（第2照射區域S 2之＋X側之區劃區域）内之標記Mk之檢測結果求出第2照射區域S 2之排列資訊，根據此排列資訊進行基板P之XY平面内之3自由度方向之精密定位。其中，第3照射區域S 3内之標記Mk之檢測動作（及排列資訊之更新）與對第2照射區域S 2之掃描曝光動作之至少一部分是並行的。又，主控制裝置90，在使基板P及光罩M往－Y方向步進移動後，以對準顯微鏡64檢測例如形成在＋X側端部近旁之第2照射區域S 2内之標記Mk（未圖示）。主控制裝置90，一邊根據此對準顯微鏡64之檢測結果與第2照射區域S 2之排列資訊進行基板P之XY平面内之3自由度方向之精密定位、一邊如圖6（b）所示，在使投影系本體42往－X方向移動之同時、進行對第2照射區域S 2之第2次掃描曝光動作。 That is, the first scanning exposure operation for the second irradiation area S 2 is based on the second irradiation area S 2 and the third irradiation area S 3 detected by the alignment microscope 62 as shown in FIG. 6( a ). The arrangement information of the second irradiation area S 2 is obtained from the detection results of the mark Mk in the second irradiation area S 2 (the + Precision positioning. Among them, the detection operation of the mark Mk in the third irradiation area S 3 (and the update of the arrangement information) is parallel to at least part of the scanning exposure operation of the second irradiation area S 2 . In addition, after the main control device 90 moves the substrate P and the mask M stepwise in the −Y direction, the alignment microscope 64 detects, for example, the mark Mk formed in the second irradiation area S 2 near the +X side end ( not shown). The main control device 90 performs precise positioning in the three-degree-of-freedom direction of the substrate P in the XY plane based on the detection results of the alignment microscope 64 and the arrangement information of the second irradiation area S 2 , as shown in FIG. 6( b ). , while moving the projection system body 42 in the −X direction, the second scanning exposure operation on the second irradiation area S 2 is performed.

當對第2照射區域S 2之掃描曝光結束時，主控制裝置90，藉由使光罩M（參照圖1）往＋X方向步進移動，以使光罩M與基板P上之第3照射區域S 3對向。主控制裝置90，以對準顯微鏡62檢測例如形成在第3照射區域S 3内之－X側端部近旁之標記Mk。主控制裝置90，在此狀態下，如圖6（c）所示，一邊使投影系本體42往＋X方向移動、一邊進行對第3照射區域S 3之第1次的掃描曝光動作。此時之對準（基板P之精密定位）控制，係視第3照射區域S 3之排列資訊及對準顯微鏡62之檢測結果進行。第3照射區域S 3之排列資訊係根據使第2照射區域S 2曝光時所求出之第2及第3照射區域S 2、S 3内之標記Mk之位置加以計算，於對準顯微鏡62，僅需根據在使第3照射區域S 3與光罩M對向配置之狀態下之光罩M之標記與基板P之標記Mk的各2點之標記，測量XY平面内之3自由度（X、Y、θz）方向之位置偏差即可。因此，與第2照射區域S 2之對準相較，能實質縮短第3照射區域S 3之對準所需之時間。 When the scanning exposure of the second irradiation area S 2 is completed, the main control device 90 moves the mask M (see FIG. 1 ) stepwise in the +X direction, so that the third irradiation on the mask M and the substrate P Area S 3 is opposite. The main control device 90 uses the alignment microscope 62 to detect, for example, the mark Mk formed near the −X side end in the third irradiation area S 3 . In this state, as shown in FIG. 6(c) , the main control device 90 moves the projection system body 42 in the +X direction while performing the first scanning exposure operation on the third irradiation area S 3 . The alignment (precision positioning of the substrate P) control at this time is based on the arrangement information of the third irradiation area S 3 and the detection results of the alignment microscope 62 . The arrangement information of the third irradiation area S 3 is calculated based on the positions of the marks Mk in the second and third irradiation areas S 2 and S 3 obtained when the second irradiation area S 2 is exposed, and is calculated using the alignment microscope 62 , it is only necessary to measure the three degrees of freedom in the XY plane ( The position deviation in the X, Y, θz) directions is sufficient. Therefore, compared with the alignment of the second irradiation area S2 , the time required for the alignment of the third irradiation area S3 can be substantially shortened.

之後，主控制裝置90，為進行對第3照射區域S 3之第2次掃描曝光動作，如圖7（a）所示，使基板P及光罩M於＋Y方向步進移動。據此，對準顯微鏡64之檢測視野之Y軸方向之位置、與形成在第2及第3照射區域S 2、S 3内之標記Mk之Y軸方向之位置即幾乎一致。 Thereafter, in order to perform the second scanning exposure operation on the third irradiation area S 3 , the main control device 90 moves the substrate P and the mask M stepwise in the +Y direction as shown in FIG. 7( a ). Accordingly, the position in the Y-axis direction of the detection field of view of the alignment microscope 64 is almost consistent with the position in the Y-axis direction of the mark Mk formed in the second and third irradiation areas S 2 and S 3 .

主控制裝置90，以和上述對第1照射區域S 1之第1次掃描曝光動作相同之程序（惟，用於標記Mk之檢測之對準顯微鏡不同），進行對第3照射區域S 3之第2次掃描曝光動作。亦即，主控制裝置90，對第3照射區域S 3之第2次掃描曝光動作，如圖7（b）所示，在投影系本體42之前，由對準顯微鏡64檢測形成在第3照射區域S 3内之例如4個標記Mk，視此檢測結果，主控制裝置90更新第3照射區域S 3之排列資訊。主控制裝置90，一邊根據此經更新之排列資訊進行基板P之XY平面内之3自由度方向之精密定位、一邊進行對第3照射區域S 3之掃描曝光動作。又，與此掃描曝光動作並行，對準顯微鏡64，如圖7（c）所示，檢測形成在第2照射區域S 2内之例如4個標記Mk。主控制裝置90，一邊根據新取得之標記Mk之位置資訊更新第3照射區域S 3之排列資訊、一邊與此並行對第3照射區域S 3之第2次掃描曝光動作。 The main control device 90 performs the same procedure as the first scanning exposure operation for the first irradiation area S 1 (except that the alignment microscope used for detecting the mark Mk is different), and performs the exposure operation for the third irradiation area S 3 . The second scan exposure action. That is, the main control device 90 performs the second scanning exposure operation on the third irradiation area S 3 , as shown in FIG. For example, there are four marks Mk in the area S 3 . Based on this detection result, the main control device 90 updates the arrangement information of the third irradiation area S 3 . The main control device 90 performs a scanning exposure operation on the third irradiation area S 3 while accurately positioning the substrate P in the three-degree-of-freedom direction in the XY plane based on the updated arrangement information. In parallel with this scanning exposure operation, the alignment microscope 64 detects, for example, four marks Mk formed in the second irradiation area S 2 as shown in FIG. 7( c ). The main control device 90 updates the arrangement information of the third irradiation area S 3 based on the newly acquired position information of the mark Mk, and performs the second scanning exposure operation on the third irradiation area S 3 in parallel.

以下，雖未圖示，但主控制裝置90係一邊適當進行基板P之Y步進動作、一邊進行對第4照射區域S 4之掃描曝光。對此第4照射區域S 4之掃描曝光動作，因與對第3照射區域S 3之掃描曝光動作大致相同，故省略說明。 Hereinafter, although not shown in the figure, the main control device 90 performs the scanning exposure of the fourth irradiation area S 4 while appropriately performing the Y stepping operation of the substrate P. The scanning exposure operation of the fourth irradiation area S 4 is substantially the same as the scanning exposure operation of the third irradiation area S 3 , so the description is omitted.

又，在對第3及第4照射區域S 3、S 4之掃描曝光動作時，可與對準顯微鏡64一起使用對準顯微鏡62進行標記Mk之檢測，使用此等對準顯微鏡62、64之輸出更新區劃區域之排列資訊。此外，為使第2照射區域S 2以後之區劃區域曝光而在求該區劃區域之排列資訊時，可使用之前為使區劃區域曝光時所求出之標記Mk之位置資訊。具體而言，例如在求第4照射區域S 4之排列資訊時，主控制裝置90雖係使用第1及第4照射區域S 1、S 4内之標記Mk之位置資訊，但亦可與此併用之前求出之第2及第3照射區域S 2、S 3内之標記Mk之位置資訊。 In addition, during the scanning exposure operation of the third and fourth irradiation areas S 3 and S 4 , the alignment microscope 62 can be used together with the alignment microscope 64 to detect the mark Mk. Outputs the arrangement information of the updated zoning area. In addition, when obtaining the arrangement information of the divisional area in order to expose the divisional area after the second irradiation area S2 , the position information of the mark Mk previously obtained when exposing the divisional area can be used. Specifically, for example, when obtaining the arrangement information of the fourth irradiation area S 4 , although the main control device 90 uses the position information of the markers Mk in the first and fourth irradiation areas S 1 and S 4 , it may also use this. The previously obtained position information of the mark Mk in the second and third irradiation areas S 2 and S 3 is also used.

根據以上說明之本實施形態，由於對準顯微鏡62、64係與投影系本體42分開獨立的往掃描方向移動，因此掃描曝光動作與對準動作之至少一部分可同時進行(並行)。從而，能謀求包含對準動作與掃描曝光動作之一連串動作所需之時間、亦即謀求基板P之曝光處理所需之一連串處理時間（生產時間）之縮短。According to the embodiment described above, since the alignment microscopes 62 and 64 move separately and independently from the projection system body 42 in the scanning direction, at least part of the scanning exposure operation and the alignment operation can be performed simultaneously (in parallel). Therefore, the time required for a series of operations including the alignment operation and the scanning exposure operation, that is, the series of processing time (production time) required for the exposure process of the substrate P can be shortened.

又，由於係在掃描方向於投影系本體42之一側及另一側分別配置有對準顯微鏡62、64，因此能與掃描曝光動作時之掃描方向（往路掃描與復路掃描）無關的，縮短包含對準動作與掃描曝光動作之一連串動作所需之時間。In addition, since the alignment microscopes 62 and 64 are respectively disposed on one side and the other side of the projection system body 42 in the scanning direction, the scanning direction can be shortened regardless of the scanning direction (forward scanning and return scanning) during the scanning exposure operation. The time required for a series of actions including alignment action and scanning exposure action.

《第2實施形態》 接著，使用圖8（a）～圖8（d），說明第2實施形態之液晶曝光裝置。第2實施形態之液晶曝光裝置之構成，除對準系之構成及動作不同外，皆與上述第1實施形態相同，因此，以下，僅說明相異點，而針對與上述第1實施形態具有相同構成及功能之要素，則賦予與上述第1實施形態相同之符號並省略其說明。 "Second Embodiment" Next, the liquid crystal exposure apparatus of 2nd Embodiment is demonstrated using FIG.8(a) - FIG.8(d). The structure of the liquid crystal exposure apparatus of the second embodiment is the same as that of the above-mentioned first embodiment except for the structure and operation of the alignment system. Therefore, only the differences will be described below, and only the differences with the above-mentioned first embodiment will be explained. Elements with the same structure and function are assigned the same symbols as those in the above-mentioned first embodiment, and descriptions thereof are omitted.

上述第1實施形態中，係對投影系本體42在掃描方向之前後（＋X側及－X側）分別配置了對準顯微鏡62、64（參照圖1），相對於此，本第2實施形態中，如圖8（a）所示，僅在投影系本體42之＋X側設有對準顯微鏡162。In the above-mentioned first embodiment, the alignment microscopes 62 and 64 (see FIG. 1 ) are respectively arranged before and after the projection system body 42 in the scanning direction (+X side and −X side). In contrast, in the second embodiment, As shown in FIG. 8(a) , an alignment microscope 162 is provided only on the +X side of the projection system body 42 .

又，相較於上述第1實施形態之對準顯微鏡62、64具有在Y軸方向分離之一對檢測視野（參照圖4（b）等），對準顯微鏡162則具有在Y軸方向分離之例如4個檢測視野。對準顯微鏡162所具有之例如4個檢測視野，其彼此之間隔係設定為能同時檢測橫跨形成在Y軸方向相鄰之例如2個區劃區域之標記Mk。In addition, compared with the alignment microscopes 62 and 64 of the first embodiment described above, which have a pair of detection fields separated in the Y-axis direction (refer to FIG. 4(b) etc.), the alignment microscope 162 has a pair of detection fields separated in the Y-axis direction. For example, 4 detection fields. The alignment microscope 162 has, for example, four detection fields, and the intervals between them are set so as to simultaneously detect the mark Mk across, for example, two adjacent divisional areas formed in the Y-axis direction.

本第2實施形態中，主控制裝置90（參照圖2），如圖8（b）及圖8（c）所示，在第1照射區域S 1之掃描曝光動作之前，一邊將對準顯微鏡162驅動於＋X方向、一邊進行形成在基板P之例如合計16個標記Mk之檢測，根據此標記Mk之檢測結果求出第1照射區域S 1之排列資訊，並一邊視該排列資訊進行基板P之精密位置控制、一邊如圖8（d）所示將投影系本體42驅動於＋X方向進行第1照射區域S 1之掃描曝光動作。 In this second embodiment, the main control device 90 (refer to FIG. 2), as shown in FIGS. 8(b) and 8(c), controls the alignment microscope before the scanning exposure operation of the first irradiation area S1 . 162 is driven in the + While performing precise position control, the projection system body 42 is driven in the +X direction to perform the scanning exposure operation of the first irradiation area S 1 as shown in FIG. 8(d).

本第2實施形態中，由於對準顯微鏡162在Y軸方向具有例如4個檢測視野，因此藉由使對準顯微鏡62往＋X方向移動一次，即能檢測形成在基板P之更大範圍處之標記Mk（此第2實施形態中，係所有標記Mk）。因此，與第1實施形態相較，能謀求基板P之曝光處理所需之一連串處理時間（生產時間）之更進一步的縮短。In the second embodiment, since the alignment microscope 162 has, for example, four detection fields in the Y-axis direction, by moving the alignment microscope 62 once in the +X direction, it is possible to detect a larger area formed on the substrate P. Marker Mk (in this second embodiment, all markers Mk). Therefore, compared with the first embodiment, the series of processing time (production time) required for the exposure processing of the substrate P can be further shortened.

本第2實施形態中，亦與上述第1實施形態同樣的，係藉由進行基板P之Y步進動作、及／或光罩M（參照圖1）之X步進動作，以進行曝光對象之區劃區域之移動。又，於本第2實施形態，由於係在第1照射區域S 1之掃描曝光前，檢測形成在基板P之所有標記Mk，因此在第2照射區域S 2以後之掃描曝光時，無需再次進行EGA計算。當然，亦可在第2照射區域S 2以後之掃描曝光時，重新進行對準測量（EGA計算）以更新各區劃區域之排列資訊。 In this second embodiment, similarly to the above-mentioned first embodiment, the exposure object is exposed by performing the Y step motion of the substrate P and/or the X step motion of the mask M (see FIG. 1 ). Movement of divided areas. In addition, in the second embodiment, since all the marks Mk formed on the substrate P are detected before the scanning exposure of the first irradiation area S1 , there is no need to perform it again during the scanning exposure of the second irradiation area S2 and thereafter. EGA calculation. Of course, during the scanning exposure after the second irradiation area S 2 , the alignment measurement (EGA calculation) can also be performed again to update the arrangement information of each divided area.

《第3實施形態》 接著，使用圖9（a）及圖9（b）說明第3實施形態之液晶曝光裝置。第3實施形態之液晶曝光裝置之構成，除對準系之構成及動作不同外，皆與上述第1實施形態相同，因此，以下，僅說明相異點，而針對與上述第1實施形態具有相同構成及功能之要素，則賦予與上述第1實施形態相同之符號並省略其說明。 "Third Embodiment" Next, the liquid crystal exposure apparatus of the 3rd Embodiment is demonstrated using FIG.9(a) and FIG.9(b). The structure of the liquid crystal exposure device of the third embodiment is the same as that of the above-mentioned first embodiment except for the structure and operation of the alignment system. Therefore, only the differences will be described below, and only the differences with the above-mentioned first embodiment will be explained. Elements with the same structure and function are assigned the same symbols as those in the above-mentioned first embodiment, and descriptions thereof are omitted.

上述第1實施形態中，對準系60係在投影系本體42之掃描方向前後（＋X側及－X側）具有對準顯微鏡62、64，相對於此，本第3實施形態中之不同點在於，僅在投影系本體42之＋X側設有對準顯微鏡62。In the above-described first embodiment, the alignment system 60 has alignment microscopes 62 and 64 before and after the projection system body 42 in the scanning direction (+X side and −X side). In contrast, the third embodiment is different from this. The alignment microscope 62 is provided only on the +X side of the projection system body 42 .

本第3實施形態中，主控制裝置90（參照圖2），在使基板P相對投影系本體42進行Y步進時，係使對準顯微鏡62與投影系本體42回歸到既定初期位置。具體而言，例如圖9（a）所示，當第1照射區域S 1之掃描曝光動作結束時，主控制裝置90，與上述第1實施形態同樣的，如圖9（b）所示，使基板P往－Y方向Y步進動作（參照圖9（b）之黑箭頭）。 In the third embodiment, the main control device 90 (see FIG. 2 ) returns the alignment microscope 62 and the projection system body 42 to a predetermined initial position when the substrate P moves Y relative to the projection system body 42 . Specifically, for example, as shown in FIG. 9(a) , when the scanning exposure operation of the first irradiation area S 1 is completed, the main control device 90 is the same as the above-described first embodiment, as shown in FIG. 9(b) . The substrate P is moved stepwise in the -Y direction Y (refer to the black arrow in Figure 9(b)).

又，主控制裝置90，與上述基板P往－Y方向之Y步進動作並行，分別將對準顯微鏡62與投影系本體42驅動於－X方向，使其回歸（參照圖9（b）之白箭頭）至初期位置（參照圖4（a））。本實施形態中，對準顯微鏡62及投影系本體42之初期位置，係各自之可移動範圍之－X側端部近旁。之後，主控制裝置90，分別將對準顯微鏡62及投影系本體42驅動於＋X方向，據以進行對第1照射區域S 1之第2次掃描曝光動作。此外，亦可在此第2次掃描曝光動作前，以對準顯微鏡62進行形成在基板P之標記Mk之檢測動作，根據其輸出，更新第1照射區域S 1之排列資訊。 In addition, the main control device 90 drives the alignment microscope 62 and the projection system body 42 in the -X direction in parallel with the Y step movement of the substrate P in the -Y direction, respectively (refer to Figure 9(b) white arrow) to the initial position (see Figure 4(a)). In this embodiment, the initial positions of the alignment microscope 62 and the projection system body 42 are near the −X-side ends of their respective movable ranges. After that, the main control device 90 drives the alignment microscope 62 and the projection system body 42 in the +X direction respectively, thereby performing the second scanning exposure operation on the first irradiation area S 1 . In addition, before the second scanning exposure operation, the alignment microscope 62 can also be used to detect the mark Mk formed on the substrate P, and the arrangement information of the first irradiation area S 1 can be updated based on the output.

根據本第3實施形態，即使對準顯微鏡62只有一個，亦能獲得與上述第1實施形態同樣的效果。According to the third embodiment, even if there is only one alignment microscope 62, the same effects as those of the above-described first embodiment can be obtained.

又，以上說明之第1～第3各實施形態之構成，可適當加以變更。例如，於上述第2實施形態，可與上述第1實施形態同樣的，於掃描方向在投影系本體42之兩側（＋X側及－X側）配置對準顯微鏡162。此場合，即使掃描方向是－X方向亦能在投影系本體42之移動前，先進行對準測量。In addition, the structures of the first to third embodiments described above can be appropriately changed. For example, in the above-described second embodiment, the alignment microscope 162 may be disposed on both sides (+X side and −X side) of the projection system body 42 in the scanning direction, similarly to the above-described first embodiment. In this case, even if the scanning direction is the -X direction, alignment measurement can be performed before moving the projection system body 42 .

又，上述第1實施形態，雖係在第1照射區域S 1之所有標記Mk之檢測結束後，開始該第1照射區域S 1之掃描曝光動作，但不限於此，亦可在形成於第1照射區域S 1内之複數個標記Mk之測量中，開始該第1照射區域S 1之掃描曝光動作。 Furthermore, in the above-mentioned first embodiment, the scanning exposure operation of the first irradiation area S 1 is started after the detection of all the marks Mk in the first irradiation area S 1 is completed. However, it is not limited to this, and it may also be formed in the first irradiation area S 1 During the measurement of the plurality of marks Mk in the first irradiation area S 1 , the scanning exposure operation of the first irradiation area S 1 is started.

又，上述各實施形態中，對準測量動作與掃描曝光動作雖係對單一基板P並行，但不限於此，亦可例如準備二片基板P，一邊進行對其中之一基板P之掃描曝光、一邊進行對另一基板P之對準測量。In addition, in each of the above embodiments, the alignment measurement operation and the scanning exposure operation are performed in parallel for a single substrate P, but the present invention is not limited to this. For example, two substrates P may be prepared, and scanning exposure of one of the substrates P may be performed while performing the scanning exposure. On one side, alignment measurement of the other substrate P is performed.

又，上述各實施形態中，雖係在第1照射區域S 1之掃描曝光後，進行設定在該第1照射區域S 1之＋Y（上）側之第2照射區域S 2之掃描曝光，但不限於此，亦可在第1照射區域S 1之掃描曝光之其次，進行對第4照射區域S 4之掃描曝光。此場合，可藉由使用例如與第1照射區域S 1對向之光罩、以及與第4照射區域S 4對向之光罩（合計二枚光罩），對第1及第4照射區域S 1、S 4連續進行掃描曝光。此外，亦可在第1照射區域S 1之掃描曝光後，使光罩M往＋X方向步進移動以進行第4照射區域S 4之掃描曝光。 Furthermore, in each of the above embodiments, after the scanning exposure of the first irradiation area S 1 , the scanning exposure of the second irradiation area S 2 set on the +Y (upper) side of the first irradiation area S 1 is performed. However, It is not limited to this, and scanning exposure of the fourth irradiation area S 4 may be performed next to the scanning exposure of the first irradiation area S 1 . In this case, for example, the first and fourth irradiation areas can be illuminated by using, for example, a mask opposing the first irradiation area S 1 and a mask opposing the fourth irradiation area S 4 (two masks in total). S 1 and S 4 perform scanning exposure continuously. In addition, after the scanning exposure of the first irradiation area S 1 , the mask M can be moved stepwise in the +X direction to perform the scanning exposure of the fourth irradiation area S 4 .

又，於上述各實施形態，標記Mk雖係形成在各區劃區域（第1～第4照射區域S 1～S 4）内，但不限於此，亦可形成在相鄰區劃區域間之區域（所謂的劃線（scribe line））内。 Furthermore, in each of the above embodiments, the mark Mk is formed in each divided area (the first to fourth irradiation areas S 1 to S 4 ), but it is not limited to this and may also be formed in the area between adjacent divided areas ( within the so-called scribe line).

又，上述各實施形態中，雖係將在Y軸方向分離之一對照明區域IAM、曝光區域IA分別生成在光罩M、基板P上（參照圖1），但照明區域IAM及曝光區域IA之形狀、長度不限於此，可適當加以變更。例如，照明區域IAM、曝光區域IA之Y軸方向長度，可分別與光罩M之圖案面、基板P上之一個區劃區域之Y軸方向長度相等。此場合，對各區劃區域進行1次掃描曝光動作即結束光罩圖案之轉印。或者，照明區域IAM、曝光區域IA，可以是Y軸方向長度分別為光罩M之圖案面、基板P上之一個區劃區域之Y軸方向長度之一半的一個區域。此場合，與上述實施形態同樣的，必須對一個區劃區域進行2次掃描曝光動作。In addition, in each of the above embodiments, a pair of illumination area IAM and exposure area IA separated in the Y-axis direction are respectively generated on the mask M and the substrate P (see FIG. 1 ). However, the illumination area IAM and the exposure area IA are The shape and length are not limited to this and can be changed appropriately. For example, the Y-axis direction length of the illumination area IAM and the exposure area IA can be equal to the Y-axis direction length of the pattern surface of the photomask M and a divided area on the substrate P respectively. In this case, one scan exposure operation is performed on each divided area to complete the transfer of the mask pattern. Alternatively, the illumination area IAM and the exposure area IA may be an area whose length in the Y-axis direction is half of the Y-axis direction length of the pattern surface of the mask M or a division area on the substrate P, respectively. In this case, similarly to the above-mentioned embodiment, two scanning exposure operations must be performed on one divided area.

又，如上述實施形態般，為將一個光罩圖案形成在區劃區域，而使投影系本體42往復以進行接合曝光之情形時，可將具有互異之檢測視野之往路用及復路用對準顯微鏡於掃描方向（X方向）配置在投影系本體42之前後。此場合，例如可使用往路用（第1次曝光動作用）之對準顯微鏡檢測區劃區域四角之標記Mk，使用復路用（第2次曝光動作用）之對準顯微鏡檢測接合部近旁之標記Mk。此處，所謂接合部，係指以往路之掃描曝光曝光之區域（圖案轉印之區域）與以復路之掃描曝光曝光之區域（圖案轉印之區域）的接合部分。作為接合部近旁之標記Mk，可預先於基板P形成標記Mk、亦可將曝光完成之圖案作為標記Mk。於上述各實施形態，在將投影系本體42驅動於＋X方向以進行掃描曝光動作時，往路用對準顯微鏡係對準顯微鏡62、復路用對準顯微鏡則係對準顯微鏡64。此外，在將投影系本體42驅動於－X方向以進行掃描曝光動作時，往路用對準顯微鏡係對準顯微鏡64、復路用對準顯微鏡則係對準顯微鏡62。In addition, as in the above-mentioned embodiment, in order to form a mask pattern in a divided area and reciprocate the projection system body 42 for joint exposure, it is possible to align the forward and return paths with different detection fields. The microscope is arranged in front of and behind the projection system body 42 in the scanning direction (X direction). In this case, for example, an alignment microscope for the forward path (first exposure function) can be used to detect the marks Mk at the four corners of the area, and an alignment microscope for the return path (second exposure function) can be used to detect the marks Mk near the joint. . Here, the so-called joint part refers to the joint part between the area exposed by the scanning exposure of the forward path (the area of pattern transfer) and the area exposed by the scanning exposure of the backward path (the area of pattern transfer). As the mark Mk near the joint part, the mark Mk may be formed on the substrate P in advance, or the exposed pattern may be used as the mark Mk. In each of the above embodiments, when the projection system body 42 is driven in the +X direction to perform the scanning exposure operation, the forward alignment microscope is the alignment microscope 62 and the return alignment microscope is the alignment microscope 64 . In addition, when the projection system body 42 is driven in the −X direction to perform the scanning exposure operation, the forward alignment microscope is the alignment microscope 64 and the return alignment microscope is the alignment microscope 62 .

又，上述實施形態（及第1、第2變形例）中，雖係針對用以驅動照明系20之照明系本體22的驅動系24、用以驅動光罩載台裝置30之載台本體32的驅動系34、用以驅動投影光學系40之投影光學系本體42的驅動系44、用以驅動基板載台裝置50之載台本體52的驅動系54、及用以驅動對準系60之對準顯微鏡62的驅動系66（分別參照圖2）分別為線性馬達之情形做了說明，但用以驅動上述照明系本體22、載台本體32、投影光學系本體42、載台本體52及對準顯微鏡62之致動器之種類不限於此，可適當變更，例如可適當使用進給螺桿（滾珠螺桿）裝置、皮帶驅動裝置等之各種致動器。In addition, in the above-mentioned embodiment (and the first and second modifications), although the driving system 24 for driving the lighting system body 22 of the lighting system 20 and the stage body 32 for driving the mask stage device 30 The drive system 34, the drive system 44 for driving the projection optical system body 42 of the projection optical system 40, the drive system 54 for driving the stage body 52 of the substrate stage device 50, and the alignment system 60 The driving system 66 of the alignment microscope 62 (refer to FIG. 2 respectively) has been described as a linear motor, but is used to drive the above-mentioned illumination system body 22, stage body 32, projection optical system body 42, stage body 52 and The type of actuator used to align the microscope 62 is not limited to this and may be appropriately changed. For example, various actuators such as a feed screw (ball screw) device and a belt drive device may be appropriately used.

又，上述各實施形態中，投影系本體42與對準顯微鏡62雖係共用往掃描方向之驅動系之一部分（例如線性馬達、導件等），但只要能個別驅動投影系本體42與對準顯微鏡62的話，不限於此，用以驅動對準顯微鏡62之驅動系66、與用以驅動投影光學系40之投影系本體42之驅動系44可以是完全獨立的構成。亦即，如圖10所示之曝光裝置10A般，可將投影光學系40A具有之投影光學系本體42與對準系60A具有之對準顯微鏡62，以Y位置彼此不重複之方式配置，以使用以驅動對準顯微鏡62之驅動系66（例如包含線性馬達、導件等）與用以驅動投影系本體42之驅動系44（例如包含線性馬達、導件等），成為完全獨立之構成。此場合，藉由在曝光對象之區劃區域之掃描曝光動作開始前，使基板P往Y軸方向步進移動（往復移動），據以進行該區劃區域之對準測量。又，亦可如圖11所示之曝光裝置10B般，藉由將用以驅動投影光學系40B具有之投影光學系本體42的驅動系44（例如包含線性馬達、導件等）、與將用以驅動對準系60B具有之對準顯微鏡62的驅動系66（例如包含線性馬達、導件等）配置成Y位置不重複，使驅動系44與驅動系66成為完全獨立之構成。In addition, in each of the above embodiments, although the projection system body 42 and the alignment microscope 62 share a part of the driving system in the scanning direction (such as a linear motor, a guide, etc.), as long as the projection system body 42 and the alignment microscope can be driven individually The microscope 62 is not limited to this. The drive system 66 for driving the alignment microscope 62 and the drive system 44 for driving the projection system body 42 of the projection optical system 40 may be completely independent structures. That is, like the exposure device 10A shown in FIG. 10 , the projection optical system body 42 included in the projection optical system 40A and the alignment microscope 62 included in the alignment system 60A can be arranged so that the Y positions do not overlap each other, so that The driving system 66 (for example, including linear motors, guides, etc.) used to drive the alignment microscope 62 and the driving system 44 (for example, including linear motors, guides, etc.) used to drive the projection system body 42 become completely independent structures. In this case, before starting the scanning exposure operation of the divided area of the exposure target, the substrate P is moved stepwise (reciprocatingly) in the Y-axis direction, thereby performing alignment measurement of the divided area. In addition, like the exposure device 10B shown in FIG. 11 , the drive system 44 (including, for example, a linear motor, a guide, etc.) for driving the projection optical system body 42 of the projection optical system 40B can also be used. The drive system 66 (including, for example, a linear motor, a guide, etc.) of the alignment microscope 62 included in the drive alignment system 60B is arranged so that the Y positions do not overlap, so that the drive system 44 and the drive system 66 become completely independent structures.

又，上述各實施形態中，雖係針對用以進行照明系20之照明系本體22之位置測量的測量系26、用以進行光罩載台裝置30之載台本體32之位置測量的測量系36、用以進行投影光學系40之投影光學系本體42之位置測量的測量系46、用以進行基板載台裝置50之載台本體52之位置測量的測量系56、及用以進行對準系60之對準顯微鏡62之位置測量的測量系68（分別參照圖2），皆包含線性編碼器之情形做了說明，但用以進行上述照明系本體22、載台本體32、投影系投影光學系本體42、載台本體52及對準顯微鏡62之位置測量之測量系統之種類不限於此，可適當變更，例如可適當使用光干涉儀、或並用線性編碼器與光干涉儀之測量系等的各種測量系統。Furthermore, in each of the above embodiments, the measurement system 26 for measuring the position of the lighting system body 22 of the lighting system 20 and the measurement system for measuring the position of the stage body 32 of the mask stage device 30 are referred to. 36. The measurement system 46 used to measure the position of the projection optical system body 42 of the projection optical system 40, the measurement system 56 used to measure the position of the stage body 52 of the substrate stage device 50, and the measurement system 56 used to perform alignment. The measurement system 68 of the system 60 for measuring the position of the microscope 62 (refer to FIG. 2 respectively) has been described as including a linear encoder, but is used to perform the above-mentioned illumination system body 22, stage body 32, and projection system projection. The type of measurement system for position measurement of the optical system body 42 , the stage body 52 and the alignment microscope 62 is not limited to this and can be appropriately changed. For example, an optical interferometer can be appropriately used, or a measurement system that uses a linear encoder and an optical interferometer together. Various measurement systems, etc.

此處，照明系20、光罩載台裝置30、投影光學系40、基板載台裝置50、對準系60可以被模組化。以下，將照明系20稱照明系模組12M、光罩載台裝置30稱光罩載台模組14M、投影光學系40稱投影光學系模組16M、基板載台裝置50稱基板載台模組18M、對準系60稱對準系模組20M。以下，雖適當的稱為「各模組12M～20M」，但係藉由載置於對應之架台28A～28E上，而將彼此在物理上獨立配置。Here, the illumination system 20, the mask stage device 30, the projection optical system 40, the substrate stage device 50, and the alignment system 60 can be modularized. Hereinafter, the illumination system 20 will be called an illumination system module 12M, the mask stage device 30 will be called a mask stage module 14M, the projection optical system 40 will be called a projection optical system module 16M, and the substrate stage device 50 will be called a substrate stage module. The group 18M and the alignment system 60 are called the alignment system module 20M. Hereinafter, although they are appropriately referred to as "each module 12M to 20M", they are physically arranged independently from each other by being placed on the corresponding racks 28A to 28E.

因此，如圖12所示，於液晶曝光裝置10，可將上述各模組12M～20M（圖12中，例如係基板載台模組18M）中之任意（1個、或複數個）模組，與其他模組獨立的加以更換。此時，更換對象之模組係與支承該模組之架台28A～28E（圖12中係架台28E）一體更換。Therefore, as shown in FIG. 12 , in the liquid crystal exposure apparatus 10 , any (one or a plurality of) modules among the modules 12M to 20M (in FIG. 12 , for example, the substrate stage module 18M) can be used. , to be replaced independently from other modules. At this time, the module to be replaced is replaced integrally with the stands 28A to 28E (stand 28E in FIG. 12 ) supporting the module.

於上述各模組12M～20M之更換動作時，作為更換對象之各模組12M～20M（及支承該模組之架台28A～28E），係沿地面26之面往X軸方向移動。因此，於架台28A～28E，以設有例如能在地面26上容易移動之例如車輪、或氣浮式裝置等較佳。如上所述，於本實施形態之液晶曝光裝置10，由於能使各模組12M～20M中之任意模組個別地與其他模組容易地分離，因此保養維修性優異。又，圖12中，雖係顯示基板載台模組18M與架台28E一起相對其他要素（投影光學系模組16M等）往＋X方向（紙面內側）移動，據以與他要素分離之態樣，但移動對象模組（及架台）之移動方向不限定於此，例如可以是－X方向（紙面前）、亦可以是＋Y方向（紙面上方）。此外，亦可設置用以確保各架台28A～28E在地面26上之設置後位置再現性的定位裝置。該定位裝置可設於各架台28A～28E，亦可藉由設在各架台28A～28E之構件與設在地面26之構件的協力動作，來再現各架台28A～28E之設置位置。During the above-mentioned replacement operation of each module 12M - 20M, each module 12M - 20M (and the stand 28A - 28E supporting the module) as the replacement target moves in the X-axis direction along the surface of the ground 26 . Therefore, it is preferable to provide the stands 28A to 28E with wheels or air-floating devices that can move easily on the ground 26 . As described above, in the liquid crystal exposure apparatus 10 of the present embodiment, any module among the modules 12M to 20M can be easily separated from other modules individually, so the maintenanceability is excellent. In addition, in FIG. 12 , the substrate stage module 18M and the gantry 28E are shown moving in the +X direction (inside the paper) relative to other elements (projection optical system module 16M, etc.) and separated from other elements. However, the moving direction of the moving object module (and the stand) is not limited to this. For example, it can be the -X direction (in front of the paper) or the +Y direction (above the paper). In addition, a positioning device may be provided to ensure reproducibility of the position of each stand 28A to 28E after being installed on the ground 26 . The positioning device can be provided on each of the stands 28A to 28E, and can also reproduce the installation position of each of the stands 28A to 28E through the cooperative action of the components provided on the stands 28A to 28E and the components on the ground 26 .

又，本實施形態之液晶曝光裝置10，由於係可獨立分離上述各模組12M～20M之構成，因此能個別地將各模組12M～20M加以升級。所謂升級，除例如用以因應曝光對象基板P之大型化等的升級外，亦包含雖然基板P大小相同，但將各模組12M～20M更換為性能更佳者之情形。Moreover, since the liquid crystal exposure apparatus 10 of this embodiment is configured to be able to independently separate each of the above-mentioned modules 12M to 20M, each of the modules 12M to 20M can be upgraded individually. The so-called upgrade includes, for example, an upgrade to cope with the increase in the size of the substrate P to be exposed, but also includes the case where the substrate P is the same size, but each module 12M to 20M is replaced with one with better performance.

此處，例如在使基板P大型化時，僅是基板P之面積（本實施形態中，係X軸及Y軸方向之尺寸）變大，通常基板P之厚度（Z軸方向之尺寸）實質上不會變化。因此，例如在因應基板P之大型化而將液晶曝光裝置10之基板載台模組18M加以升級時，如圖12所示，取代基板載台模組18M，新***之基板載台模組18AM及支承基板載台模組18AM之架台28G，雖然X軸及／或Y軸方向之尺寸會改變，但Z軸方向之尺寸實質上不會變化。同樣的，光罩載台模組14M亦不會因為因應光罩M之大型化之升級，使Z軸方向之尺寸實質變化。Here, for example, when the substrate P is enlarged, only the area of the substrate P (dimensions in the X-axis and Y-axis directions in this embodiment) becomes larger. Normally, the thickness of the substrate P (dimensions in the Z-axis direction) is substantially larger. will not change. Therefore, for example, when the substrate stage module 18M of the liquid crystal exposure apparatus 10 is upgraded in response to the increase in the size of the substrate P, as shown in FIG. 12 , a new substrate stage module 18AM is inserted instead of the substrate stage module 18M. As for the stand 28G that supports the substrate stage module 18AM, although the dimensions in the X-axis and/or Y-axis directions will change, the dimensions in the Z-axis direction will not substantially change. Similarly, the size of the mask stage module 14M will not substantially change in the Z-axis direction due to the upgrade in response to the enlargement of the mask M.

又，例如為擴大照明區域IAM、曝光區域IA（分別參照圖1等），可藉由增加照明系模組12M所具有之照明光學系之數量、投影光學系模組16M所具有之投影透鏡模組之數量，來將照明系模組12M、投影光學系模組16M分別加以升級。升級後之照明系模組、投影光學系模組（皆未未圖示）與升級前相較，僅X軸及／或Y軸方向之尺寸變化，Z軸方向之尺寸實質上不會變化。In addition, for example, in order to expand the illumination area IAM and the exposure area IA (refer to FIG. 1 etc. respectively), the number of illumination optical systems included in the illumination system module 12M and the number of projection lens modules included in the projection optical system module 16M can be increased. According to the number of sets, 12M of lighting system modules and 16M of projection optical system modules can be upgraded respectively. Compared with the upgraded lighting module and projection optical module (neither shown in the figure), only the size in the X-axis and/or Y-axis direction changes, and the size in the Z-axis direction will not change substantially.

因此，本實施形態之液晶曝光裝置10，支承各模組12M～20M之架台28A～28E、及支承升級後各模組之架台（參照支承圖12所示之基板載台模組18AM之架台28G），其Z軸方向之尺寸是固定的。此處，所謂尺寸固定，係指更換前之架台與更換後之架台，其Z軸方向之尺寸共通，亦即支承功能相同之模組之架台之Z軸方向尺寸大致一定。如此，本實施形態之液晶曝光裝置10，由於各架台28A～28E之Z軸方向尺寸固定，因此能謀求設計各模組時之時間縮短。Therefore, the liquid crystal exposure apparatus 10 of this embodiment has stands 28A to 28E that support each module 12M to 20M, and a stand that supports each upgraded module (refer to the stand 28G that supports the substrate stage module 18AM shown in Figure 12 ), its size in the Z-axis direction is fixed. Here, the so-called fixed size means that the size of the Z-axis direction of the rack before replacement and the rack after replacement are the same, that is, the size of the Z-axis direction of the rack supporting modules with the same function is roughly the same. In this way, in the liquid crystal exposure apparatus 10 of this embodiment, since the Z-axis direction dimensions of each of the stages 28A to 28E are fixed, the time required for designing each module can be shortened.

又，於液晶曝光裝置10，由於基板P之曝光面、及光罩M之圖案面分別與重力方向平行（所謂的縱列配置），因此可將照明系模組12M、光罩載台模組14M、投影光學系模組16M及基板載台模組18M之各模組，在地面26面上直列設置。如此，由於上述各模組不會有彼此自重之作用，因此，無需如將例如相當於上述各模組之基板載台裝置、投影光學系、光罩載台裝置及照明系於重力方向重疊配置之習知曝光裝置般，設置支承各要素之高剛性主機架（機體）。此外，由於構造簡單，裝置之設置工程、各模組12M～20M之維修保養作業、更換作業等皆能容易、且在短時間內進行。又，由於能沿地面26配置上述各模組，因此能降低裝置全體之高度。如此，可使收容上述各模組之腔室小型化，謀求成本降低且縮短設置工期。In addition, in the liquid crystal exposure device 10, since the exposure surface of the substrate P and the pattern surface of the mask M are parallel to the direction of gravity (so-called tandem arrangement), the illumination system module 12M and the mask stage module can be arranged Each module 14M, the projection optical system module 16M and the substrate carrier module 18M are arranged in series on 26 surfaces on the ground. In this way, since the above-mentioned modules do not have the effect of each other's own weight, there is no need to overlap and arrange the substrate stage device, projection optical system, mask stage device and lighting system corresponding to the above-mentioned modules in the direction of gravity. Like conventional exposure devices, a highly rigid main frame (body) is provided to support each element. In addition, due to the simple structure, the installation process of the device, maintenance work, and replacement work of each module 12M to 20M can be easily carried out in a short time. In addition, since each of the above-mentioned modules can be arranged along the floor 26, the height of the entire device can be reduced. In this way, the chamber housing each of the above-mentioned modules can be miniaturized, thereby reducing costs and shortening the installation period.

又，上述各實施形態中，於照明系20使用之光源、及從該光源照射之照明光IL之波長並無特別限定，可以是例如ArF準分子雷射光（波長193nm）、KrF準分子雷射光（波長248nm）等之紫外光、或F 2雷射光（波長157nm）等真空紫外光。 In addition, in each of the above embodiments, the light source used in the illumination system 20 and the wavelength of the illumination light IL irradiated from the light source are not particularly limited, and may be, for example, ArF excimer laser light (wavelength 193 nm) or KrF excimer laser light. (wavelength 248nm) and other ultraviolet light, or F 2 laser light (wavelength 157nm) and other vacuum ultraviolet light.

又，上述實施形態中，雖係包含光源之照明系本體22被驅動於掃描方向，但不限於此，亦可與例如特開2000－12422號公報所揭示之曝光裝置同樣的，將光源固定，僅使照明光IL掃描於掃描方向。Furthermore, in the above embodiment, the illumination system body 22 including the light source is driven in the scanning direction, but the invention is not limited to this. For example, the light source may be fixed like the exposure device disclosed in Japanese Patent Application Laid-Open No. 2000-12422. Only the illumination light IL is scanned in the scanning direction.

又，照明區域IAM、曝光區域IA，於上述實施形態中係形成為延伸於Y軸方向之帶狀，但不限於此，可例如美國專利第5,729,331號說明書所揭示，將配置成鋸齒狀之複數個區域加以組合。In addition, the illumination area IAM and the exposure area IA are formed in a strip shape extending in the Y-axis direction in the above embodiment. However, they are not limited to this. For example, as disclosed in US Pat. No. 5,729,331, they may be arranged in a zigzag shape. areas are combined.

又，上述各實施形態中，光罩M及基板P雖係配置成與水平面正交（所謂的縱列配置），但不限於此，亦可將光罩M及基板P配置成與水平面平行。此場合，照明光IL之光軸與重力方向大致平行。In each of the above embodiments, the mask M and the substrate P are arranged orthogonally to the horizontal plane (so-called tandem arrangement). However, the mask M and the substrate P may be arranged parallel to the horizontal plane. In this case, the optical axis of the illumination light IL is substantially parallel to the direction of gravity.

又，雖係在掃描曝光動作時根據對準測量之結果進行基板P之XY平面内之微幅定位，但亦可與此並行，於掃描曝光動作前（或與掃描曝光動作並行）求出基板P之面位置資訊，於掃描曝光動作中進行基板P之面位置控制（所謂的自動對焦控制）。In addition, although the micro positioning of the substrate P in the XY plane is performed based on the results of the alignment measurement during the scanning exposure operation, the substrate P can also be obtained in parallel before the scanning exposure operation (or in parallel with the scanning exposure operation). The surface position information of P is used to control the position of the surface of the substrate P (so-called autofocus control) during the scanning exposure operation.

又，曝光裝置之用途不限於將液晶顯示元件圖案轉印至方型玻璃板之液晶用曝光裝置，亦能廣泛地適用於例如有機EL（Electro-Luminescence）面板製造用之曝光裝置、半導體製造用之曝光裝置、用以製造薄膜磁頭、微機器及DNA晶片等之曝光裝置。此外，不僅是半導體元件等之微元件，亦能適用於為製造於光曝光裝置、EUV曝光裝置、X線曝光裝置及電子線曝光裝置等使用之光罩或標線片，將電路圖案轉印至玻璃基板或矽晶圓等之曝光裝置。In addition, the use of the exposure device is not limited to the exposure device for liquid crystal that transfers the liquid crystal display element pattern to the square glass plate. It can also be widely used in exposure devices for organic EL (Electro-Luminescence) panel manufacturing and semiconductor manufacturing. Exposure equipment used to manufacture thin film magnetic heads, micromachines, DNA chips, etc. In addition, it can be applied not only to micro-components such as semiconductor components, but also to photomasks or reticles used in manufacturing optical exposure equipment, EUV exposure equipment, X-ray exposure equipment, and electron beam exposure equipment to transfer circuit patterns. Exposure equipment to glass substrates or silicon wafers.

又，曝光對象之物體不限於玻璃板，亦可以是例如晶圓、陶瓷基板、薄膜構件、或光罩母板等其他物體。此外，在曝光對象物係平面顯示器用基板之情形時，該基板之厚度並無特別限定，亦包含例如片狀物（具可撓性之片狀構件）。又，本實施形態之曝光裝置，在曝光對象物係一邊長度、或對角長在500mm以上之基板時尤為有效。此外，在曝光對象之基板為具有可撓性之片狀（片材）之情形時，該片材可以是形成為捲筒狀。此場合，無需依賴載台裝置之步進動作，只要使捲筒旋轉（捲繞）即能容易的相對照明區域（照明光）變更（步進移動）曝光對象之區劃區域。In addition, the object to be exposed is not limited to the glass plate, but may also be other objects such as wafers, ceramic substrates, thin film members, or photomask motherboards. In addition, when the object to be exposed is a flat panel display substrate, the thickness of the substrate is not particularly limited and may include, for example, a sheet (a flexible sheet member). In addition, the exposure device of this embodiment is particularly effective when the exposure object is a substrate with a side length or a diagonal length of 500 mm or more. In addition, when the substrate to be exposed is a flexible sheet (sheet), the sheet may be formed in a roll shape. In this case, there is no need to rely on the step motion of the stage device. By simply rotating (winding) the drum, the divided area of the exposure target can be easily changed (stepped moved) relative to the illumination area (illumination light).

液晶顯示元件（或半導體元件）等之電子元件，係經由進行元件之功能、性能設計的步驟、根據此設計步驟製作光罩（或標線片）的步驟、製作玻璃基板（或晶圓）的步驟、以上述各實施形態之曝光裝置及其曝光方法將光罩（標線片）圖案轉印至玻璃基板的微影步驟、使曝光後之玻璃基板顯影的顯影步驟、將殘存有光阻之部分以外部分之露出構件藉蝕刻加以去除的蝕刻步驟、將蝕刻完成後無需之光阻加以除去的光阻除去步驟、元件組裝步驟、檢査步驟等而被製造。此場合，於微影步驟使用上述實施形態之曝光裝置實施前述曝光方法，於玻璃基板上形成元件圖案，因此能以良好生產性製造高積體度之元件。 產業上 之可 利用性 Electronic components such as liquid crystal display components (or semiconductor components) are processed through the steps of designing the function and performance of the component, the steps of making a photomask (or reticle) based on this design step, and the step of making a glass substrate (or wafer). Steps: a photolithography step of transferring the photomask (reticle) pattern to a glass substrate using the exposure device and the exposure method of each of the above embodiments; a development step of developing the exposed glass substrate; and removing the remaining photoresist. Parts of the exposed components are removed by etching, a photoresist removal step that removes unnecessary photoresist after etching, a component assembly step, an inspection step, etc. are manufactured. In this case, in the photolithography step, the exposure apparatus of the above embodiment is used to implement the exposure method to form a device pattern on the glass substrate. Therefore, high-density devices can be manufactured with good productivity. industrial availability _

如以上之說明，本發明之曝光裝置及方法適於對物體進行掃描曝光。又，本發明之平面顯示器之製造方法適於平面顯示器之生產。此外，本發明之元件製造方法適於微元件之生產。As explained above, the exposure device and method of the present invention are suitable for scanning exposure of objects. Furthermore, the method for manufacturing a flat-panel display of the present invention is suitable for the production of flat-panel displays. In addition, the component manufacturing method of the present invention is suitable for the production of micro components.

10、10A、10B:液晶曝光裝置 12M:照明系模組 14M:光罩載台模組 16M:投影光學系模組 18M:基板載台模組 18AM:基板載台模組 20:照明系 20M:對準系模組 22:照明系本體 28A～28G:架台 30:光罩載台裝置 32:載台本體 40、40A、40B:投影光學系 42:投影系本體 44:驅動系 46:測量系 50:基板載台裝置 52:載台本體 60、60A、60B:對準系 62、64:對準顯微鏡 66:驅動系 80:導件 82:標尺 84、86:讀頭 IA:曝光區域 IAM:照明區域 IL:照明光 M:光罩 Mk:標記 P:基板 S 1～S 4:照射區域 10, 10A, 10B: Liquid crystal exposure device 12M: Illumination system module 14M: Mask stage module 16M: Projection optical system module 18M: Substrate stage module 18AM: Substrate stage module 20: Illumination system 20M: Alignment system module 22: Illumination system body 28A～28G: Stand 30: Mask stage device 32: Stage body 40, 40A, 40B: Projection optical system 42: Projection system body 44: Drive system 46: Measurement system 50 :Substrate stage device 52: Stage body 60, 60A, 60B: Alignment system 62, 64: Alignment microscope 66: Drive system 80: Guide 82: Scale 84, 86: Reading head IA: Exposure area IAM: Illumination Area IL: illumination light M: mask Mk: mark P: substrate S 1 to S 4 : irradiation area

[圖1]係第1實施形態之液晶曝光裝置的概念圖。 [圖2]係顯示以圖1之液晶曝光裝置之控制系為中心構成之主控制裝置之輸出入關係的方塊圖。 [圖3]係用以說明投影系本體、及對準顯微鏡之測量系之構成的圖。 [圖4（a）～圖4（d）]係用以說明曝光動作時之液晶曝光裝置之動作的圖（其1～其4）。 [圖5（a）～圖5（d）]係用以說明曝光動作時之液晶曝光裝置之動作的圖（其5～其8）。 [圖6（a）～圖6（c）]係用以說明曝光動作時之液晶曝光裝置之動作的圖（其9～其11）。 [圖7（a）～圖7（c）]係用以說明曝光動作時之液晶曝光裝置之動作的圖（其12～其15）。 [圖8（a）～圖8（d）]係用以說明第2實施形態之對準系之動作的圖（其1～其4）。 [圖9（a）及圖9（b）]係用以說明第3實施形態之對準系、及投影光學系之動作的圖（其1及其2）。 [圖10]係顯示投影光學系、及對準系之驅動系之變形例（其1）的圖。 [圖11]係顯示投影光學系、及對準系之驅動系之變形例（其2）的圖。 [圖12]係液晶曝光裝置之模組更換的概念圖。 [Fig. 1] is a conceptual diagram of the liquid crystal exposure apparatus according to the first embodiment. [Fig. 2] is a block diagram showing the input-output relationship of the main control device, which is centered on the control system of the liquid crystal exposure device of Fig. 1. [Fig. 3] is a diagram illustrating the structure of the main body of the projection system and the measurement system of the alignment microscope. [Fig. 4(a) to Fig. 4(d)] are diagrams (parts 1 to 4) for explaining the operation of the liquid crystal exposure device during the exposure operation. [Figs. 5(a) to 5(d)] are diagrams (Parts 5 to 8) for explaining the operation of the liquid crystal exposure device during the exposure operation. [Figs. 6(a) to 6(c)] are diagrams (9 to 11) for explaining the operation of the liquid crystal exposure device during the exposure operation. [Figs. 7(a) to 7(c)] are diagrams (No. 12 to No. 15) for explaining the operation of the liquid crystal exposure device during the exposure operation. [Figs. 8(a) to 8(d)] are diagrams (parts 1 to 4) for explaining the operation of the alignment system of the second embodiment. [Fig. 9(a) and Fig. 9(b)] are diagrams (Parts 1 and 2) for explaining the operations of the alignment system and the projection optical system of the third embodiment. [Fig. 10] is a diagram showing a modification (Part 1) of the projection optical system and the drive system of the alignment system. [Fig. 11] is a diagram showing a modification (part 2) of the projection optical system and the drive system of the alignment system. [Figure 12] is a conceptual diagram of module replacement of the liquid crystal exposure device.

10:液晶曝光裝置 10:LCD exposure device

20:照明系 20:Lighting Department

22:照明系本體 22:Lighting system body

30:光罩載台裝置 30: Mask stage device

40:投影光學系 40:Department of Projection Optics

42:投影系本體 42:Projection system ontology

50:基板載台裝置 50: Substrate carrier device

52:載台本體 52: Carrier body

62、64:對準顯微鏡 62, 64: Align the microscope

IA:曝光區域 IA: exposure area

IAM:照明區域 IAM: lighting area

IL:照明光 IL: illumination light

M:光罩 M: photomask

Mk:對準標記 Mk: Alignment mark

P:基板 P:Substrate

Claims (37)

一種曝光裝置，其係一邊使投影光學系相對物體移動於掃描方向、一邊透過該投影光學系對該物體照射光以對該物體進行掃描曝光，其具備： 標記檢測裝置，其於該掃描方向設於該投影光學系之一側，檢測於該掃描方向設於該物體之不同位置之第1標記及第2標記；以及 控制裝置，使該投影光學系及該標記檢測裝置沿該掃描方向移動； 該控制裝置， 使該標記檢測裝置移動至可檢測配置於該物體之第1區劃區域附近之該第1標記之第1位置、及可檢測於該掃描方向配置於與該物體之該第1區劃區域並排之第2區劃區域附近之該第2標記之第2位置中的各個， 根據以該標記檢測裝置進行之該第1標記之檢測結果，使該投影光學系相對於該第1區劃區域移動， 根據以該標記檢測裝置進行之該第2標記之檢測結果，使該投影光學系相對於該第2區劃區域移動。 An exposure device that moves a projection optical system relative to an object in a scanning direction and irradiates light through the projection optical system to the object to scan and expose the object, and is provided with: A mark detection device, which is disposed on one side of the projection optical system in the scanning direction, and detects the first mark and the second mark disposed at different positions of the object in the scanning direction; and A control device to move the projection optical system and the mark detection device along the scanning direction; The control device, The mark detection device is moved to a first position that can detect the first mark arranged near the first divided area of the object, and can detect the first mark arranged side by side with the first divided area of the object in the scanning direction. Each of the second positions of the second mark near the 2 zoned area, Based on the detection result of the first mark by the mark detection device, the projection optical system is moved relative to the first divided area, Based on the detection result of the second mark by the mark detection device, the projection optical system is moved relative to the second divided area. 如請求項1所述之曝光裝置，其中，該控制裝置，在以該標記檢測裝置進行之設於該物體之標記之至少一部分的檢測結束後，使該投影光學系移動。The exposure device according to claim 1, wherein the control device moves the projection optical system after the detection of at least a part of the mark provided on the object by the mark detection device is completed. 如請求項1或2所述之曝光裝置，其進一步具有： 第2檢測裝置，於該掃描方向設於該投影光學系之另一側； 該控制裝置， 在從該另一側往該一側之該掃描曝光中，根據該標記檢測裝置進行之設於該物體之標記之檢測結果，使該投影光學系移動， 在從該一側往該另一側之該掃描曝光中，根據該第2檢測裝置進行之設於該物體之標記之檢測結果，使該投影光學系移動。 The exposure device as described in claim 1 or 2, further having: The second detection device is provided on the other side of the projection optical system in the scanning direction; The control device, In the scanning exposure from the other side to the side, the projection optical system is moved according to the detection result of the mark provided on the object by the mark detection device, During the scanning exposure from one side to the other side, the projection optical system is moved based on the detection result of the mark provided on the object by the second detection device. 如請求項3所述之曝光裝置，其中，該控制裝置，係在進行對該第2區劃區域之從該一側往該另一側之該掃描曝光之前，使該第2檢測裝置移動至可檢測該第2標記之位置。The exposure device as claimed in claim 3, wherein the control device is to move the second detection device to an appropriate position before performing the scanning exposure from one side to the other side of the second divided area. The position of the second mark is detected. 如請求項3所述之曝光裝置，其中，該控制裝置，在從該另一側往該一側之該掃描曝光中，一邊使該標記檢測裝置及該投影光學系從該另一側往該一側移動，一邊使該第2檢測裝置從該另一側往該一側移動。The exposure device as claimed in claim 3, wherein the control device, during the scanning exposure from the other side to the one side, causes the mark detection device and the projection optical system to move from the other side to the side. While one side is moving, the second detection device is moved from the other side to this side. 如請求項1或2所述之曝光裝置，其中，與包含該標記檢測裝置進行之設於該物體之標記之檢測之標記檢測動作至少一部分並行，來進行包含該掃描曝光之掃描曝光動作。The exposure device according to claim 1 or 2, wherein the scanning exposure operation including the scanning exposure is performed at least partially in parallel with the mark detection operation including detection of the mark provided on the object by the mark detection device. 如請求項6所述之曝光裝置，其中， 該標記檢測動作，包含該標記檢測裝置往進行該標記之檢測之位置移動之動作； 該掃描曝光動作，包含在該掃描曝光之開始前該投影光學系移動之動作。 The exposure device according to claim 6, wherein, The mark detection action includes the movement of the mark detection device to the position where the mark is detected; The scanning exposure action includes an action of moving the projection optical system before starting the scanning exposure. 如請求項6所述之曝光裝置，其中，該控制裝置，於該標記檢測動作及該掃描曝光動作之至少一方之動作中，使該投影光學系之移動速度與該標記檢測裝置之移動速度不同。The exposure device according to claim 6, wherein the control device causes the moving speed of the projection optical system to be different from the moving speed of the mark detection device in at least one of the mark detection action and the scanning exposure action. . 如請求項8所述之曝光裝置，其中，該標記檢測裝置之移動速度，與僅進行該標記檢測動作時相較，在與該掃描曝光動作並列進行該標記檢測動作時較慢。The exposure device according to claim 8, wherein the moving speed of the mark detection device is slower when the mark detection operation is performed in parallel with the scanning exposure operation, compared with when only the mark detection operation is performed. 請求項1或2所述之曝光裝置，其中，該標記檢測裝置，係可檢測於與該掃描方向交叉之方向，與該光照射之區域之長度相較，設在該物體上之複數個標記間之距離較長之標記。The exposure device according to claim 1 or 2, wherein the mark detection device is capable of detecting a plurality of marks provided on the object in a direction intersecting the scanning direction and compared with the length of the area illuminated by the light. Marks with a longer distance between them. 如請求項10所述之曝光裝置，其中， 該物體具有在與該掃描方向交叉之方向並排設置之第3及第4區劃區域； 該標記檢測裝置，於與該掃描方向交叉之方向，可同時檢測配置於該第3區劃區域附近之第3標記與配置於該第4區劃區域附近之第4標記。 The exposure device according to claim 10, wherein, The object has third and fourth divisional areas arranged side by side in the direction crossing the scanning direction; The mark detection device can simultaneously detect the third mark arranged near the third division area and the fourth mark arranged near the fourth division area in the direction intersecting the scanning direction. 如請求項11所述之曝光裝置，其中，該控制裝置，在將進行掃描曝光動作之區域從該第3區劃區域變更為第4區劃區域之情形時，使該物體與該投影光學系往與該掃描方向交叉之方向相對移動，與該相對移動並行，使該標記檢測裝置與該投影光學系移動至檢測開始位置。The exposure device according to claim 11, wherein the control device causes the object to interact with the projection optical system when the area where the scanning exposure operation is performed is changed from the third division area to the fourth division area. The direction in which the scanning direction intersects moves relatively in parallel with the relative movement, causing the mark detection device and the projection optical system to move to the detection start position. 如請求項1或2所述之曝光裝置，其中， 該投影光學系之光軸與水平面平行； 該物體係以被該光照射之曝光面相對該水平面成正交之狀態配置。 The exposure device according to claim 1 or 2, wherein, The optical axis of the projection optical system is parallel to the horizontal plane; The object system is arranged in a state where the exposure surface irradiated by the light is orthogonal to the horizontal surface. 如請求項13所述之曝光裝置，其中，該標記檢測裝置與該投影光學系配置成彼此可分離。The exposure device according to claim 13, wherein the mark detection device and the projection optical system are configured to be separable from each other. 如請求項1或2所述之曝光裝置，其中，該物體係用於平面顯示器裝置之基板。The exposure device according to claim 1 or 2, wherein the object is used as a substrate for a flat-panel display device. 如請求項15所述之曝光裝置，其中，該基板之至少一邊之長度或對角長為500mm以上。The exposure device according to claim 15, wherein the length or diagonal length of at least one side of the substrate is 500 mm or more. 一種平面顯示器之製造方法，其包含： 使用如請求項1或2所述之曝光裝置使該物體曝光之動作；以及 使曝光後之該物體顯影之動作。 A method for manufacturing a flat-panel display, which includes: The act of exposing the object using an exposure device as described in claim 1 or 2; and The action of developing the object after exposure. 一種元件製造方法，其包含： 使用如請求項1或2所述之曝光裝置使該物體曝光之動作；以及 使曝光後之該物體顯影之動作。 A component manufacturing method comprising: The act of exposing the object using an exposure device as described in claim 1 or 2; and The action of developing the object after exposure. 一種曝光方法，其係一邊使投影光學系相對物體移動於掃描方向、一邊透過該投影光學系對該物體照射光以對該物體進行掃描曝光，其包含： 使用於該掃描方向設於該投影光學系之一側之標記檢測裝置，檢測於該掃描方向設於該物體之不同位置之第1標記及第2標記之動作； 使該投影光學系及該標記檢測裝置沿該掃描方向移動之動作； 使該標記檢測裝置移動至可檢測配置於該物體之第1區劃區域附近之該第1標記之第1位置、及可檢測於該掃描方向配置於與該物體之該第1區劃區域並排之第2區劃區域附近之該第2標記之第2位置中的各個之動作； 根據以該標記檢測裝置進行之該第1標記之檢測結果，使該投影光學系相對於該第1區劃區域移動之動作；以及 根據以該標記檢測裝置進行之該第2標記之檢測結果，使該投影光學系相對於該第2區劃區域移動之動作。 An exposure method, which is to move the projection optical system relative to the object in the scanning direction while irradiating the object with light through the projection optical system to perform scanning exposure on the object, which includes: Use a mark detection device disposed on one side of the projection optical system in the scanning direction to detect the movements of the first mark and the second mark disposed at different positions of the object in the scanning direction; The action of moving the projection optical system and the mark detection device along the scanning direction; The mark detection device is moved to a first position that can detect the first mark arranged near the first divided area of the object, and to a first position that can detect the first mark arranged side by side with the first divided area of the object in the scanning direction. 2. Actions of each of the second positions of the second mark near the divided area; The action of moving the projection optical system relative to the first divided area based on the detection result of the first mark by the mark detection device; and An action of moving the projection optical system relative to the second divided area based on the detection result of the second mark by the mark detection device. 如請求項19所述之曝光方法，其中，在以該標記檢測裝置進行之設於該物體之標記之至少一部分的檢測結束後，使該投影光學系移動。The exposure method according to claim 19, wherein the projection optical system is moved after the detection of at least part of the mark provided on the object by the mark detection device is completed. 如請求項19或20所述之曝光方法，其中， 於該掃描方向在從該投影光學系之另一側往該一側之該掃描曝光中，根據該標記檢測裝置進行之設於該物體之標記之檢測結果，使該投影光學系移動， 在從該一側往該另一側之該掃描曝光中，根據於該掃描方向設於該投影光學系之該另一側之第2檢測裝置進行之設於該物體之標記之檢測結果，使該投影光學系移動。 The exposure method as described in claim 19 or 20, wherein, In the scanning direction from the other side of the projection optical system to the one side, the projection optical system is moved according to the detection result of the mark provided on the object by the mark detection device, In the scanning exposure from one side to the other side, based on the detection result of the mark provided on the object by the second detection device provided on the other side of the projection optical system in the scanning direction, The projection optical system moves. 如請求項21所述之曝光方法，其中，在進行對該第2區劃區域之從該一側往該另一側之該掃描曝光之前，使該第2檢測裝置移動至可檢測該第2標記之位置。The exposure method as described in claim 21, wherein before performing the scanning exposure from one side to the other side of the second divided area, the second detection device is moved to a position that can detect the second mark. location. 如請求項21所述之曝光方法，其中，在從該另一側往該一側之該掃描曝光中，一邊使該標記檢測裝置及該投影光學系從該另一側往該一側移動，一邊使該第2檢測裝置從該另一側往該一側移動。The exposure method according to claim 21, wherein during the scanning exposure from the other side to the one side, the mark detection device and the projection optical system are moved from the other side to the one side, On one side, the second detection device is moved from the other side to the one side. 如請求項19或20所述之曝光方法，其中，與包含設於該物體之標記之檢測之標記檢測動作至少一部分並行，來進行包含該掃描曝光之掃描曝光動作。The exposure method according to claim 19 or 20, wherein the scanning exposure operation including the scanning exposure is performed at least partially in parallel with the mark detection operation including detection of the mark provided on the object. 如請求項24所述之曝光方法，其中， 該標記檢測動作，包含該標記檢測裝置往進行該標記檢測動作之位置移動之動作； 該掃描曝光動作，包含在該掃描曝光之開始前該投影光學系移動之動作。 The exposure method as described in claim 24, wherein, The mark detection action includes the action of moving the mark detection device to the position where the mark detection action is performed; The scanning exposure action includes an action of moving the projection optical system before starting the scanning exposure. 如請求項24所述之曝光方法，其中，於該標記檢測動作及該掃描曝光動作之至少一方之動作中，使該投影光學系之移動速度與該標記檢測裝置之移動速度不同。The exposure method according to claim 24, wherein in at least one of the mark detection action and the scanning exposure action, the moving speed of the projection optical system is different from the moving speed of the mark detection device. 如請求項26所述之曝光方法，其中，該標記檢測裝置之移動速度，與僅進行該標記檢測動作時相較，在與該掃描曝光動作並列進行該標記檢測動作時較慢。The exposure method according to claim 26, wherein the moving speed of the mark detection device is slower when the mark detection operation is performed in parallel with the scanning exposure operation, compared with when only the mark detection operation is performed. 如請求項19或20所述之曝光方法，其中，該標記檢測裝置，係可檢測於與該掃描方向交叉之方向，與該光照射之區域之長度相較，設在該物體上之複數個標記間之距離較長之標記。The exposure method as described in claim 19 or 20, wherein the mark detection device can detect a plurality of marks on the object in a direction crossing the scanning direction, compared with the length of the area illuminated by the light. Marks with a longer distance between them. 如請求項28所述之曝光方法，其中， 該物體具有在與該掃描方向交叉之方向並排設置之第3及第4區劃區域； 該標記檢測裝置，於與該掃描方向交叉之方向，可同時檢測配置於該第3區劃區域附近之第3標記與配置於該第4區劃區域附近之第4標記。 The exposure method as described in claim 28, wherein, The object has third and fourth divisional areas arranged side by side in the direction crossing the scanning direction; The mark detection device can simultaneously detect the third mark arranged near the third division area and the fourth mark arranged near the fourth division area in the direction intersecting the scanning direction. 如請求項29所述之曝光方法，其中，在將進行掃描曝光動作之區域從該第3區劃區域變更為第4區劃區域之情形時，使該物體與該投影光學系往與該掃描方向交叉之方向相對移動，與該相對移動並行，使該標記檢測裝置與該投影光學系移動至檢測開始位置。The exposure method according to claim 29, wherein when changing the area where the scanning exposure operation is performed from the third division area to the fourth division area, the object and the projection optical system are made to intersect with the scanning direction. In parallel with the relative movement, the mark detection device and the projection optical system move to the detection start position. 如請求項19或20所述之曝光方法，其中， 該投影光學系之光軸與水平面平行； 該物體係以被該光照射之曝光面相對該水平面成正交之狀態配置。 The exposure method as described in claim 19 or 20, wherein, The optical axis of the projection optical system is parallel to the horizontal plane; The object system is arranged in a state where the exposure surface irradiated by the light is orthogonal to the horizontal surface. 如請求項31所述之曝光方法，其中，該標記檢測裝置與該投影光學系配置成彼此可分離。The exposure method according to claim 31, wherein the mark detection device and the projection optical system are configured to be separable from each other. 如請求項19或20所述之曝光方法，其中，該物體係用於平面顯示器裝置之基板。The exposure method according to claim 19 or 20, wherein the object is used for a substrate of a flat display device. 如請求項33所述之曝光方法，其中，該基板之至少一邊之長度或對角長為500mm以上。The exposure method according to claim 33, wherein the length or diagonal length of at least one side of the substrate is 500 mm or more. 一種平面顯示器之製造方法，其包含： 使用如請求項19或20所述之曝光方法使該物體曝光之動作；以及 使曝光後之該物體顯影之動作。 A method for manufacturing a flat-panel display, which includes: The act of exposing the object using an exposure method as described in claim 19 or 20; and The action of developing the object after exposure. 一種元件製造方法，其包含： 使用如請求項19或20所述之曝光方法使該物體曝光之動作；以及 使曝光後之該物體顯影之動作。 A component manufacturing method comprising: The act of exposing the object using an exposure method as described in claim 19 or 20; and The action of developing the object after exposure. 如請求項1或2所述之曝光裝置，其中，該控制裝置，係在對該第1區劃區域進行從該一側往該另一側之該掃描曝光之期間，以該標記檢測裝置檢測該第2標記之方式，使該標記檢測裝置從該一側往該另一側移動。The exposure device according to claim 1 or 2, wherein the control device detects the mark detection device with the mark detection device during the scanning exposure of the first division area from one side to the other side. The mode of the second mark causes the mark detection device to move from one side to the other side.
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