TW202348713A - Buffer sheet, method for mounting electronic components, and method for producing electronic component device - Google Patents
Buffer sheet, method for mounting electronic components, and method for producing electronic component device Download PDFInfo
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- TW202348713A TW202348713A TW111121789A TW111121789A TW202348713A TW 202348713 A TW202348713 A TW 202348713A TW 111121789 A TW111121789 A TW 111121789A TW 111121789 A TW111121789 A TW 111121789A TW 202348713 A TW202348713 A TW 202348713A
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- TW
- Taiwan
- Prior art keywords
- buffer sheet
- layer
- electronic component
- thermosetting layer
- electronic components
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 13
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- 239000010410 layer Substances 0.000 claims description 123
- -1 acrylate compound Chemical class 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 25
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- 238000010586 diagram Methods 0.000 description 7
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Landscapes
- Laminated Bodies (AREA)
Abstract
Description
本揭示有關一種緩衝片、電子零件的構裝方法及電子零件裝置的製造方法。The present disclosure relates to a buffer sheet, a construction method of electronic components, and a manufacturing method of an electronic component device.
以往，在使用了發光二極體(Light Emitting Diode，LED)的顯示器中，主要使用約1mm以上的尺寸的LED封裝體(晶片發光二極體(chip LED))，其是藉由打線接合(wire bonding)將LED構裝於基板上來製作而得。近年來，從達成像素密度和響應速率的高度化的觀點來看，逐漸採用藉由覆晶接合(flip-chip bonding)將被稱為微小化發光二極體(mini LED)、微型發光二極體(micro LED)等小型LED直接構裝於基板上的方式。In the past, displays using light emitting diodes (LEDs) mainly used LED packages (chip LEDs) with a size of about 1 mm or more, which were packaged by wire bonding ( Wire bonding) is produced by mounting LEDs on a substrate. In recent years, from the viewpoint of achieving higher pixel density and higher response rate, miniaturized light-emitting diodes (mini LEDs) and micro light-emitting diodes through flip-chip bonding have been gradually adopted. Small LEDs such as micro LEDs are directly mounted on the substrate.
不限於LED等顯示器周邊零件，隨著扇出型晶圓級封裝(Fan Out Wafer Level Package，FO-WLP)、扇入型晶圓級封裝(Fan In Wafer Level Package，FI-WLP)等封裝體形態、電容器等負責單一功能的離散式半導體(discrete semiconductor)等普及，被構裝於基板上的電子零件的尺寸逐漸變小。如果個別地對基板實施經小型化的電子零件的構裝，則需要大量的時間，因此為了提升生產性而有轉換成將複數個一併構裝的方法的傾向。It is not limited to display peripheral parts such as LEDs, but also includes packages such as Fan Out Wafer Level Package (FO-WLP) and Fan In Wafer Level Package (FI-WLP). Discrete semiconductors that perform a single function such as capacitors have spread, and the size of electronic components mounted on a substrate has gradually become smaller. If the miniaturized electronic components are individually assembled on the substrate, it will take a lot of time. Therefore, in order to improve productivity, there is a tendency to switch to a method of integrally mounting a plurality of electronic components.
作為將複數個電子零件一併構裝於基板上的方法，存在下述方法：在將複數個電子零件隔著焊料等連接材料來配置於基板上的狀態下，使用經加熱至連接材料會熔融的溫度後的構件來將電子零件按壓在基板上(熱壓接)。在此方法中，如果電子零件的形狀、高度等不固定，或者加熱後的構件的與電子零件接觸的面傾斜，則電子零件(尤其是與基板連接的連接部)不會受到均等的壓力，可能發生連接不良。作為用以對配置於基板上的LED晶片施加均等的壓力的策略，例如專利文獻1提出了使用一種片材來實行熱壓接，該片材是在耐熱性樹脂膜的雙面上積層矽氧橡膠組成物的硬化物層而得。 [先前技術文獻] (專利文獻) As a method of collectively mounting a plurality of electronic components on a substrate, there is a method in which a plurality of electronic components are arranged on the substrate via a connecting material such as solder, and the connecting material is heated until the connecting material melts. The temperature of the component is used to press the electronic component onto the substrate (thermocompression bonding). In this method, if the shape, height, etc. of the electronic components are not fixed, or if the surface of the heated member that contacts the electronic components is tilted, the electronic components (especially the connection portion connected to the substrate) will not receive equal pressure, A poor connection may occur. As a strategy for applying uniform pressure to an LED chip arranged on a substrate, for example, Patent Document 1 proposes thermocompression bonding using a sheet in which silicone is laminated on both sides of a heat-resistant resin film. Obtained from the hardened layer of rubber composition. [Prior technical literature] (patent document)
專利文獻1：日本特開2015-170690號公報Patent Document 1: Japanese Patent Application Publication No. 2015-170690
[發明所欲解決的問題][Problem to be solved by the invention]
隨著電子零件的小型化進展，而有下述傾向：些微的熱壓接條件的不均等成為原因，從而發生連接不良的可能性提高。除此之外，伴隨電子零件的高密度化，而有配置於基板上的電子零件的間隔變狹窄的傾向。因此，現有的片材無法以對應狹小化後的電子零件的間隔的方式充分變形，無法充分獲得對於電子零件的接觸面積，因此發生無法獲得良好的壓力緩衝效果情況。As the miniaturization of electronic components progresses, there is a tendency that slight unevenness in thermocompression bonding conditions may become the cause, thereby increasing the possibility of connection failure. In addition, as the density of electronic components increases, the intervals between electronic components arranged on the substrate tend to become narrower. Therefore, the conventional sheet cannot be deformed sufficiently to correspond to the narrowed intervals of the electronic components, and the contact area with the electronic components cannot be sufficiently obtained. Therefore, a good pressure buffering effect may not be obtained.
有鑑於上述情事，本揭示的目的在於提供一種緩衝片、使用該緩衝片之電子零件的構裝方法、及使用該緩衝片之電子零件裝置的製造方法，該緩衝片能夠將電子零件良好地構裝於基板上。 [解決問題的技術手段] In view of the above, an object of the present disclosure is to provide a buffer sheet, a method of assembling electronic components using the buffer sheet, and a method of manufacturing an electronic component device using the buffer sheet, which can well structure the electronic components. Mounted on the base plate. [Technical means to solve problems]
用以解決上述問題的手段包含以下實施態樣。 ＜1＞一種緩衝片，其具備熱硬化層、及非熱硬化層，前述非熱硬化層的厚度為10μm以下。 ＜2＞如＜1＞所述之緩衝片，其用於將電子零件構裝於基板上的步驟。 ＜3＞如＜2＞所述之緩衝片，其中，前述電子零件包含微型LED。 ＜4＞如＜2＞或＜3＞所述之緩衝片，其中，前述非熱硬化層配置於與前述電子零件相對的一側。 ＜5＞如＜1＞～＜4＞中任一項所述之緩衝片，其中，前述熱硬化層的厚度為10μm～100μm。 ＜6＞如＜1＞～＜5＞中任一項所述之緩衝片，其中，前述熱硬化層包含(甲基)丙烯酸酯化合物。 ＜7＞如＜1＞～＜6＞中任一項所述之緩衝片，其中，前述熱硬化層包含高分子成分。 ＜8＞如＜1＞～＜7＞中任一項所述之緩衝片，其依序具備前述非熱硬化層、前述熱硬化層及保護層。 ＜9＞一種電子零件的構裝方法，其具有使用加熱用構件來將電子零件與基板熱壓接的步驟，前述熱壓接是在前述加熱用構件與前述電子零件之間配置有＜1＞～＜8＞中任一項所述之緩衝片的狀態下實行。 ＜10＞一種電子零件裝置的製造方法，其具有使用加熱用構件來將電子零件與基板熱壓接的步驟，前述熱壓接是在前述加熱用構件與前述電子零件之間配置有＜1＞～＜8＞中任一項所述之緩衝片的狀態下實行。 [發明的功效] Means for solving the above problems include the following implementation modes. <1> A buffer sheet provided with a thermosetting layer and a non-thermosetting layer, the thickness of the non-thermosetting layer being 10 μm or less. <2> The buffer sheet according to <1>, which is used in the step of mounting electronic components on a substrate. <3> The buffer sheet according to <2>, wherein the electronic component includes a micro LED. <4> The buffer sheet according to <2> or <3>, wherein the non-thermosetting layer is disposed on the side opposite to the electronic component. <5> The buffer sheet according to any one of <1> to <4>, wherein the thickness of the thermosetting layer is 10 μm to 100 μm. <6> The cushioning sheet according to any one of <1> to <5>, wherein the thermosetting layer contains a (meth)acrylate compound. <7> The cushioning sheet according to any one of <1> to <6>, wherein the thermosetting layer contains a polymer component. <8> The buffer sheet according to any one of <1> to <7>, which includes the non-thermosetting layer, the thermosetting layer and a protective layer in this order. <9> A method of assembling an electronic component, which includes the step of thermocompression bonding the electronic component to a substrate using a heating member, the thermocompression bonding having <1> arranged between the heating member and the electronic component. ~Execution in the state of the buffer sheet described in any one of ＜8＞. <10> A method of manufacturing an electronic component device, which includes the step of thermocompression bonding the electronic component to a substrate using a heating member, the thermocompression bonding having <1> arranged between the heating member and the electronic component. ~Execution in the state of the buffer sheet described in any one of ＜8＞. [Efficacy of the invention]
根據本揭示，能夠提供一種緩衝片、使用該緩衝片之電子零件的構裝方法、及使用該緩衝片之電子零件裝置的製造方法，該緩衝片能夠將電子零件良好地構裝於基板上。According to the present disclosure, it is possible to provide a buffer sheet that can satisfactorily mount electronic components on a substrate, a method of mounting electronic components using the buffer sheet, and a method of manufacturing an electronic component device using the buffer sheet.
以下，詳細說明依據本揭示的實施形態。但是，本揭示不限定於以下實施形態。 在以下的實施形態中，其構成要素(亦包含要素步驟等)，除了有特別明示的情況外，否則並非必須。關於數值及其範圍亦相同，並不限制本發明。 在本揭示中，所謂「步驟」的用語，除了獨立於其他步驟的步驟以外，即便在無法明確與其他步驟區分的情況下，只要能夠達成該步驟的目的，亦包含該步驟。 本揭示中使用「～」來表示的數值範圍，包含「～」的前後所記載的數值分別作為最小値及最大値。 在本揭示中階段性地被記載的數值範圍中，在一個數值範圍所記載的上限値或下限値，可置換成其他階段性的記載的數值範圍的上限値或下限値。又，在本揭示中所記載的數值範圍中，其數值範圍的上限値或下限値，亦可置換成實施例所示的值。 在本揭示中，各成分可包含複數種符合的物質。當組成物中存在有複數種符合各成分的物質時，只要未特別說明，各成分的含率或含量意指存在於組成物中的該複數種物質的合計含率或合計含量。 Hereinafter, embodiments according to the present disclosure will be described in detail. However, this disclosure is not limited to the following embodiments. In the following embodiments, the constituent elements (including element steps, etc.) are not essential unless otherwise expressly stated. The same applies to numerical values and their ranges, which do not limit the present invention. In this disclosure, the term "step" includes steps that are independent of other steps and include steps that cannot be clearly distinguished from other steps as long as the purpose of the step can be achieved. The numerical range represented by "～" in this disclosure includes the numerical values described before and after "～" as the minimum value and the maximum value respectively. Among the numerical ranges described in stages in this disclosure, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value in another numerical range described in stages. In addition, in the numerical range described in this disclosure, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the Example. In this disclosure, each component may include a plurality of conforming substances. When there are multiple substances matching each component in the composition, unless otherwise specified, the content rate or content of each component means the total content rate or total content of the plurality of substances present in the composition.
＜緩衝片＞ 本揭示的緩衝片是一種緩衝片，其具備熱硬化層、及非熱硬化層，前述非熱硬化層的厚度為10μm以下。 在本揭示中，「緩衝片」意指一種材料，其用來在將某個物體壓接在另一個物體上時減少這些物體受到的壓力的不均等。 在本揭示中，「熱硬化層」意指一種具有能夠利用加熱進行硬化的性質之層。 在本揭示中，「非熱硬化層」意指一種不具有能夠利用加熱進行硬化的性質之層。 ＜Buffer sheet＞ The buffer sheet of the present disclosure is a buffer sheet that includes a thermosetting layer and a non-thermosetting layer, and the thickness of the non-thermosetting layer is 10 μm or less. In this disclosure, "buffer sheet" means a material that is used to reduce the uneven pressure on one object when the objects are pressed against another object. In this disclosure, "thermally hardened layer" means a layer having the property of being able to be hardened using heat. In this disclosure, a "non-thermally hardenable layer" means a layer that does not have the property of being hardenable by heating.
本揭示的緩衝片能夠用於例如將電子零件構裝於基板上的步驟。藉由使用上述構成的緩衝片，能夠將電子零件良好地構裝於基板上。尤其，即便在以高密度構裝小型電子零件的情況下，亦能夠有效地抑制連接不良的發生。其理由被認為如下所述。The buffer sheet of the present disclosure can be used, for example, in a step of mounting electronic components on a substrate. By using the buffer sheet having the above-mentioned structure, electronic components can be satisfactorily mounted on the substrate. In particular, even when small electronic components are constructed at high density, the occurrence of connection failures can be effectively suppressed. The reason is considered to be as follows.
緩衝片所包含的熱硬化層因由對配置於基板上的電子零件施加熱量和壓力之構件(以下亦稱為加熱用構件)所給予的壓力而以配合電子零件的形狀的方式變形，並且因由加熱用構件所給予的熱量而硬化。亦即，熱硬化層藉由在以配合電子零件的形狀的方式變形後的狀態下硬化，來保持變形後的狀態。The thermosetting layer included in the buffer sheet is deformed to match the shape of the electronic component due to the pressure exerted by a member (hereinafter also referred to as a heating member) that applies heat and pressure to the electronic component disposed on the substrate, and is heated It is hardened by the heat given by the component. That is, the thermosetting layer maintains the deformed state by hardening in the deformed state to match the shape of the electronic component.
緩衝片中包含的非熱硬化層是以對應於熱硬化層的基於電子零件的形狀的方式變形。藉由非熱硬化層的厚度為10μm以下，從而即便在電子零件的間隔較狹窄(例如是100μm以下)的情況下，亦能夠充分追隨熱硬化層的變形。 其結果，能夠充分確保緩衝片對於電子零件的接觸面積，施加於電子零件的壓力的緩衝效果能夠良好地發揮。 The non-thermohardened layer included in the buffer sheet deforms in a manner corresponding to the shape of the electronic component based on the thermohardened layer. Since the thickness of the non-thermosetting layer is 10 μm or less, even when the distance between the electronic components is relatively narrow (for example, 100 μm or less), the deformation of the thermosetting layer can be fully followed. As a result, the contact area of the buffer sheet with respect to the electronic components can be sufficiently ensured, and the buffering effect of the pressure applied to the electronic components can be exerted satisfactorily.
緩衝片較佳是在熱壓接步驟中與電子零件接觸的一側具有厚度為10μm以下的非熱硬化層。 藉由緩衝片在熱壓接步驟中與電子零件接觸的一側具有厚度為10μm以下的非熱硬化層，熱壓接時能夠充分確保緩衝片對於電子零件的接觸面積，施加於電子零件的壓力的緩衝效果能夠良好地發揮。進一步，熱壓接步驟結束後能夠在熱硬化層不附著於電子零件的情況下將緩衝片從電子零件上去除。 The buffer sheet preferably has a non-thermohardening layer with a thickness of 10 μm or less on the side that comes into contact with the electronic component in the thermocompression bonding step. By having a non-thermohardening layer with a thickness of 10 μm or less on the side of the buffer sheet that contacts the electronic components during the thermocompression bonding step, the contact area of the buffer sheet with the electronic components can be fully ensured during thermocompression bonding, and the pressure exerted on the electronic components can be fully ensured. The buffering effect can be exerted well. Furthermore, after the thermocompression bonding step is completed, the buffer sheet can be removed from the electronic component without the thermosetting layer adhering to the electronic component.
從充分確保緩衝片與電子零件的接觸面積的觀點來看，熱硬化層較佳是：藉由熱壓接步驟中所給予的熱量來暫時軟化，然後加以硬化。From the viewpoint of ensuring a sufficient contact area between the buffer sheet and the electronic component, the thermosetting layer is preferably temporarily softened by the heat given in the thermocompression bonding step and then hardened.
從避免非熱硬化層附著於電子零件上等的觀點來看，非熱硬化層中包含的成分的熔點較佳是高於熱壓接步驟中所給予的熱量的溫度。例如當非熱硬化層中包含的成分是熱塑性樹脂時，其熔點較佳是比熱壓接步驟中所給予的熱量的溫度高出30℃以上，更佳是高出50℃以上，進一步更佳是高出70℃以上。 當非熱硬化層中包含的成分是金屬時，其熔點較佳是比熱壓接步驟中所給予的熱量的溫度高出30℃以上，更佳是高出50℃以上，進一步更佳是高出70℃以上。 在本揭示中，熱塑性樹脂的玻璃轉化溫度是使用示差掃描熱量測定裝置(DSC，PerkinElmer公司製造，DSC-7型(型號))，以試樣量為10mg、升溫速度為5℃/min、測定氣氛為空氣的條件所測得的值。 From the viewpoint of preventing the non-thermal hardening layer from adhering to electronic components, etc., the melting point of the component contained in the non-thermal hardening layer is preferably a temperature higher than the heat applied in the thermocompression bonding step. For example, when the component contained in the non-thermosetting layer is a thermoplastic resin, its melting point is preferably at least 30°C higher than the temperature of the heat given in the thermocompression bonding step, more preferably at least 50°C higher, and still more preferably It is more than 70℃ higher. When the component contained in the non-thermal hardening layer is metal, its melting point is preferably at least 30°C higher than the temperature of the heat given in the thermocompression bonding step, more preferably at least 50°C higher, and still more preferably at least 30°C higher. above 70℃. In this disclosure, the glass transition temperature of the thermoplastic resin is measured using a differential scanning calorimeter (DSC, manufactured by PerkinElmer, DSC-7 model (model)) with a sample amount of 10 mg and a temperature rise rate of 5°C/min. Atmosphere is the value measured under air conditions.
緩衝片的厚度(總厚度)並無特別限制，能夠根據熱壓接的方法、進行熱壓接的對象物的狀態等來選擇。 從確保充分的壓力緩衝效果的觀點來看，緩衝片的厚度較佳是20μm以上，更佳是40μm以上，進一步更佳是60μm以上。 從確保充分的導熱性的觀點來看，緩衝片的厚度較佳是150μm以下，更佳是125μm以下，進一步更佳是100μm。 The thickness (total thickness) of the buffer sheet is not particularly limited and can be selected depending on the thermocompression bonding method, the state of the object to be thermocompression bonded, and the like. From the viewpoint of ensuring a sufficient pressure buffering effect, the thickness of the buffer sheet is preferably 20 μm or more, more preferably 40 μm or more, and still more preferably 60 μm or more. From the viewpoint of ensuring sufficient thermal conductivity, the thickness of the buffer sheet is preferably 150 μm or less, more preferably 125 μm or less, and still more preferably 100 μm.
(熱硬化層) 熱硬化層包含例如硬化性成分。作為硬化性成分，可列舉例如：(甲基)丙烯酸酯化合物、環氧樹脂、雙馬來醯亞胺化合物、氰酸酯化合物、及酚化合物。硬化性成分可以是主劑與硬化劑之組合。 (heat hardened layer) The thermosetting layer contains, for example, a curing component. Examples of the curing component include: (meth)acrylate compounds, epoxy resins, bismaleimide compounds, cyanate ester compounds, and phenol compounds. The hardening component can be a combination of main agent and hardener.
從熱硬化層的硬化反應前的黏度和硬化反應後的熱膨脹係數的觀點來看，硬化性成分較佳是選自由(甲基)丙烯酸酯化合物、環氧樹脂、雙馬來醯亞胺化合物、及酚化合物所組成之群組中的至少一種，更佳是選自由(甲基)丙烯酸酯化合物、環氧樹脂、及雙馬來醯亞胺化合物所組成之群組中的至少一種，從硬化速度的觀點來看，進一步更佳是(甲基)丙烯酸酯化合物。熱硬化層中包含的硬化性成分可以僅為1種，亦可以是2種以上的組合。 在本揭示中，「(甲基)丙烯酸酯」意指丙烯酸酯或甲基丙烯酸酯。 From the viewpoint of the viscosity of the thermosetting layer before the curing reaction and the thermal expansion coefficient after the curing reaction, the curing component is preferably selected from the group consisting of (meth)acrylate compounds, epoxy resins, bismaleimide compounds, and at least one selected from the group consisting of phenolic compounds, more preferably at least one selected from the group consisting of (meth)acrylate compounds, epoxy resins, and bismaleimide compounds, from hardening From the viewpoint of speed, a (meth)acrylate compound is further more preferable. The curable component contained in the thermosetting layer may be only one type or a combination of two or more types. In this disclosure, "(meth)acrylate" means acrylate or methacrylate.
當熱硬化層含有(甲基)丙烯酸酯化合物時，作為(甲基)丙烯酸酯化合物，並無特別限制，能夠從通常使用的(甲基)丙烯酸酯化合物中適當選擇。(甲基)丙烯酸酯化合物可以是單官能(甲基)丙烯酸酯化合物，亦可以是二官能以上的(甲基)丙烯酸酯化合物。作為(甲基)丙烯酸酯化合物，具體而言，可列舉：丁四醇型多(甲基)丙烯酸酯化合物、縮水甘油基醚型(甲基)丙烯酸酯化合物、雙酚A型二(甲基)丙烯酸酯化合物、環癸烷型二(甲基)丙烯酸酯化合物、羥甲基型(甲基)丙烯酸酯化合物、二㗁烷(dioxane)型二(甲基)丙烯酸酯化合物、雙酚F型(甲基)丙烯酸酯化合物、二羥甲基型(甲基)丙烯酸酯化合物、異氰脲酸型二(甲基)丙烯酸酯化合物、異氰脲酸型三(甲基)丙烯酸酯化合物、三羥甲基型三(甲基)丙烯酸酯化合物等。其中，較佳是選自由三羥甲基型三(甲基)丙烯酸酯化合物、異氰脲酸型二(甲基)丙烯酸酯化合物、異氰脲酸型三(甲基)丙烯酸酯化合物、雙酚F型(甲基)丙烯酸酯化合物、環癸烷型二(甲基)丙烯酸酯化合物、及縮水甘油基醚型(甲基)丙烯酸酯化合物所組成之群組中的至少一種。When the thermosetting layer contains a (meth)acrylate compound, the (meth)acrylate compound is not particularly limited and can be appropriately selected from commonly used (meth)acrylate compounds. The (meth)acrylate compound may be a monofunctional (meth)acrylate compound or a bifunctional or higher (meth)acrylate compound. Specific examples of the (meth)acrylate compound include: tetraol-type poly(meth)acrylate compounds, glycidyl ether-type (meth)acrylate compounds, and bisphenol A-type bis(meth)acrylate compounds. ) Acrylate compound, cyclodecane type di(meth)acrylate compound, hydroxymethyl type (meth)acrylate compound, dioxane type di(meth)acrylate compound, bisphenol F type (meth)acrylate compound, dimethylol type (meth)acrylate compound, isocyanuric acid type di(meth)acrylate compound, isocyanuric acid type tri(meth)acrylate compound, tris Hydroxymethyl tri(meth)acrylate compound, etc. Among them, preferred ones are selected from the group consisting of trimethylol-type tri(meth)acrylate compounds, isocyanuric acid-type di(meth)acrylate compounds, isocyanuric acid-type tri(meth)acrylate compounds, and bis(meth)acrylate compounds. At least one of the group consisting of a phenol F type (meth)acrylate compound, a cyclodecane type di(meth)acrylate compound, and a glycidyl ether type (meth)acrylate compound.
從硬化速度和硬化反應後的硬化物的強度的觀點來看，(甲基)丙烯酸酯化合物較佳是二官能以上的(甲基)丙烯酸酯化合物。 從抑制因(甲基)丙烯酸酯化合物的官能基數較多而產生的反應抑制(意指官能基未全部充分反應的現象)的觀點來看，(甲基)丙烯酸酯化合物較佳是二官能的(甲基)丙烯酸酯化合物或三官能的(甲基)丙烯酸酯化合物。 熱硬化層中包含的(甲基)丙烯酸酯化合物可以僅為1種，亦可以是2種以上。 From the viewpoint of the curing speed and the strength of the cured product after the curing reaction, the (meth)acrylate compound is preferably a bifunctional or higher functional (meth)acrylate compound. The (meth)acrylate compound is preferably bifunctional from the viewpoint of suppressing reaction inhibition (a phenomenon in which all functional groups are not fully reacted) due to a large number of functional groups in the (meth)acrylate compound. (meth)acrylate compound or trifunctional (meth)acrylate compound. The number of (meth)acrylate compounds contained in the thermosetting layer may be only one type, or two or more types.
當熱硬化層包含(甲基)丙烯酸酯化合物時，為了促進(甲基)丙烯酸酯化合物的聚合反應，可含有聚合起始劑。作為聚合起始劑，可列舉藉由熱量來產生自由基之化合物(熱自由基聚合起始劑)。When the thermosetting layer contains a (meth)acrylate compound, a polymerization initiator may be included in order to promote the polymerization reaction of the (meth)acrylate compound. Examples of the polymerization initiator include compounds that generate radicals by heat (thermal radical polymerization initiators).
作為熱自由基聚合起始劑，可列舉：偶氮化合物、有機過氧化物等。從操作性和保存穩定性的觀點來看，較佳是有機過氧化物。Examples of thermal radical polymerization initiators include azo compounds, organic peroxides, and the like. From the viewpoint of operability and storage stability, organic peroxides are preferred.
作為熱自由基聚合起始劑，可列舉：酮過氧化物、氫過氧化物、二醯基過氧化物、二烷基過氧化物、過氧縮酮、烷基過氧化酯(alkyl peroxyester)、及過氧碳酸酯。熱自由基聚合起始劑可僅使用1種，亦可將2種以上組合使用。Examples of thermal radical polymerization initiators include ketone peroxides, hydroperoxides, dialkyl peroxides, dialkyl peroxides, peroxyketals, and alkyl peroxyesters. , and peroxycarbonate. Only one type of thermal radical polymerization initiator may be used, or two or more types may be used in combination.
作為酮過氧化物的具體例，可列舉：過氧化甲基乙基酮、過氧化甲基環己酮、過氧化甲基異丁基酮、過氧化乙醯丙酮、過氧化環己酮、及過氧化甲基環己酮。Specific examples of ketone peroxides include methyl ethyl ketone peroxide, methyl cyclohexanone peroxide, methyl isobutyl ketone peroxide, acetylacetone peroxide, cyclohexanone peroxide, and Methylcyclohexanone peroxide.
作為氫過氧化物的具體例，可列舉：氫過氧化1,1,3,3-四甲基丁基、氫過氧化異丙苯、氫過氧化三級丁基、氫過氧化對薄荷烷(p-menthane hydroperoxide)、及氫過氧化二異丙苯。Specific examples of the hydroperoxide include 1,1,3,3-tetramethylbutyl hydroperoxide, cumene hydroperoxide, tertiary butyl hydroperoxide, and p-menthane hydroperoxide. (p-menthane hydroperoxide), and dicumyl hydroperoxide.
作為二醯基過氧化物的具體例，可列舉：過氧化二異丁醯、過氧化雙-3,5,5-三甲基己醯、過氧化二月桂醯、過氧化二苯甲醯、過氧化間甲苯甲醯、及過氧化琥珀醯。Specific examples of the dihydroxyperoxide include: diisobutylperoxide, bis-3,5,5-trimethylhexylperoxide, dilaurylperoxide, dibenzoylperoxide, m-toluene peroxide, and succinate peroxide.
作為二烷基過氧化物的具體例，可列舉：過氧化二異丙苯、2,5-二甲基-2,5-雙(三級丁基過氧基)己烷、1,3-雙(三級丁基過氧基異丙基)己烷、過氧化三級丁基異丙苯、過氧化二-三級丁基、過氧化二-三級己基、2,5-二甲基-2,5-雙(三級丁基過氧基)己炔-3、及雙(三級丁基過氧基)二異丙苯。Specific examples of dialkyl peroxides include: dicumyl peroxide, 2,5-dimethyl-2,5-bis(tertiary butylperoxy)hexane, 1,3- Bis(tertiary butylperoxyisopropyl)hexane, tertiary butylcumyl peroxide, di-tertiary butyl peroxide, di-tertiary hexyl peroxide, 2,5-dimethyl -2,5-bis(tertiary butylperoxy)hexyne-3, and bis(tertiary butylperoxy)dicumylbenzene.
作為過氧縮酮的具體例，可列舉：1,1-雙(三級己基過氧基)-3,3,5-三甲基環己烷、1,1-雙(三級己基過氧基)環己烷、1,1-雙(三級丁基過氧基)-2-甲基環己烷、1,1-雙(三級丁基過氧基)環己烷、2,2-雙(三級丁基過氧基)丁烷、及4,4-雙[(三級丁基)過氧基]戊酸丁酯。Specific examples of peroxy ketals include: 1,1-bis(tertiary hexylperoxy)-3,3,5-trimethylcyclohexane, 1,1-bis(tertiary hexylperoxy) base) cyclohexane, 1,1-bis(tertiary butylperoxy)-2-methylcyclohexane, 1,1-bis(tertiary butylperoxy)cyclohexane, 2,2 -Bis(tertiary butylperoxy)butane, and 4,4-bis[(tertiary butyl)peroxy]butyl valerate.
作為烷基過氧化酯(alkyl peroxyester)的具體例，可列舉：過氧新癸酸1,1,3,3,-四甲基丁酯、過氧新癸酸α-異丙苯酯、過氧新癸酸三級丁酯、過氧新癸酸三級己酯、過氧新庚酸三級丁酯、過氧三甲基乙酸三級己酯、過氧三甲基乙酸三級丁酯、過氧-2-乙基己酸1,1,3,3-四甲基丁酯、過氧-2-乙基己酸三級戊酯、過氧-2-乙基己酸三級丁酯、過氧異丁酸三級丁酯、過氧六氫化對苯二甲酸二-三級丁酯、過氧-3,5,5-三甲基己酸1,1,3,3-四甲基丁酯、過氧-3,5,5-三甲基己酸三級戊酯、過氧-3,5,5-三甲基己酸三級丁酯、過氧乙酸三級丁酯、過氧苯甲酸三級丁酯、過氧三甲基己二酸二丁酯、2,5-二甲基-2,5-雙(2-乙基己醯基過氧基)己烷、過氧-2-乙基己酸三級己酯、O,O-過氧碳酸三級己酯異丙酯、過氧月桂酸三級丁酯、O,O-過氧碳酸三級丁酯異丙酯、O,O-過氧碳酸三級丁酯2-乙基己酯、及2,5-二甲基-2,5-雙(苯甲醯基過氧基)己烷。Specific examples of alkyl peroxyester include 1,1,3,3-tetramethylbutyl peroxyneodecanoate, α-cumyl peroxyneodecanoate, and peroxyneodecanoate. Tertiary butyl oxyneodecanate, tertiary hexyl peroxyneodecanoate, tertiary butyl peroxyneoheptanoate, tertiary hexyl peroxytrimethylacetate, tertiary butyl peroxytrimethylacetate , 1,1,3,3-tetramethylbutyl peroxy-2-ethylhexanoate, tertiary amyl peroxy-2-ethylhexanoate, tertiary butyl peroxy-2-ethylhexanoate Ester, tertiary butyl peroxyisobutyrate, di-tertiary butyl peroxyhexahydroterephthalate, 1,1,3,3-tetramethylperoxy-3,5,5-trimethylhexanoate Methyl butyl ester, peroxy-3,5,5-trimethylhexanoic acid tertiary amyl ester, peroxy-3,5,5-trimethylhexanoic acid tertiary butyl ester, peroxyacetic acid tertiary butyl ester , tertiary butyl peroxybenzoate, dibutyl peroxytrimethyladipate, 2,5-dimethyl-2,5-bis(2-ethylhexylperoxy)hexane, Tertiary hexyl peroxy-2-ethylhexanoate, O,O-tertiary hexyl peroxycarbonate isopropyl ester, tertiary butyl peroxylaurate, O,O-tertiary butyl peroxycarbonate isopropyl Propyl ester, O,O-tertiary butylperoxycarbonate 2-ethylhexyl ester, and 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane.
作為過氧碳酸酯的具體例，可列舉：過氧二碳酸二正丙酯、過氧碳酸二異丙基酯、過氧碳酸雙(4-三級丁基環己基)酯、過氧碳酸二-2-乙基己酯、過氧碳酸二-二級丁酯、過氧二碳酸二-3-甲氧基丁酯、過氧二碳酸二-2-乙基己酯、過氧二碳酸二異丙酯、過氧碳酸三級戊酯異丙酯、過氧碳酸三級丁酯異丙酯、過氧碳酸三級丁酯2-乙基己酯、1,6-雙(三級丁基過氧基羧氧基)己烷。Specific examples of peroxycarbonate include di-n-propyl peroxydicarbonate, diisopropyl peroxycarbonate, bis(4-tertiary butylcyclohexyl)peroxycarbonate, and di-propylperoxycarbonate. -2-Ethylhexyl ester, di-secondary butyl peroxycarbonate, di-3-methoxybutyl peroxydicarbonate, di-2-ethylhexyl peroxydicarbonate, di-peroxydicarbonate Isopropyl ester, tertiary amyl peroxycarbonate isopropyl ester, tertiary butyl peroxycarbonate isopropyl ester, tertiary butyl peroxycarbonate 2-ethylhexyl, 1,6-bis(tertiary butyl Peroxycarboxyoxy)hexane.
從反應速度和保存穩定性的觀點來看，作為聚合起始劑，較佳是1,1-雙(三級丁基過氧基)環己烷、二(三級丁基過氧基)二異丙苯、過氧化二異丙苯、2,5-二甲基-2,5-二(三級丁基過氧基)己烷、過氧化三級丁基異丙苯、及過氧化二-三級丁基。From the viewpoint of reaction speed and storage stability, preferred polymerization initiators are 1,1-bis(tertiary butylperoxy)cyclohexane and di(tertiary butylperoxy)di Cumene, dicumyl peroxide, 2,5-dimethyl-2,5-di(tertiary butylperoxy)hexane, tertiary butylcumyl peroxide, and dicumyl peroxide -Tertiary butyl.
當熱硬化層含有聚合起始劑時，相對於熱硬化層中包含的硬化性成分100質量份，其含量較佳是0.1質量份～20質量份，更佳是1質量份～10質量份，進一步更佳是2質量份～5質量份。When the thermosetting layer contains a polymerization initiator, its content is preferably 0.1 to 20 parts by mass, and more preferably 1 to 10 parts by mass relative to 100 parts by mass of the curable component contained in the thermosetting layer. More preferably, it is 2 to 5 parts by mass.
從調整硬化反應前的膜形成性和黏度、硬化反應後的機械物性等的觀點來看，熱硬化層可含有高分子成分。The thermosetting layer may contain a polymer component from the viewpoint of adjusting the film formability and viscosity before the curing reaction, the mechanical properties after the curing reaction, and the like.
作為熱硬化層中包含的高分子成分，可列舉：丙烯酸樹脂、苯乙烯樹脂、丁二烯樹脂、醯亞胺樹脂、醯胺樹脂等熱塑性樹脂。 熱硬化層中包含的高分子成分可以僅為1種，亦可以是2種以上的組合。 Examples of the polymer component contained in the thermosetting layer include thermoplastic resins such as acrylic resin, styrene resin, butadiene resin, amide resin, and amide resin. The polymer component contained in the thermosetting layer may be only one type or a combination of two or more types.
能夠藉由例如使聚合性單體進行自由基聚合，來製造高分子成分。作為聚合性單體，可列舉例如：(甲基)丙烯酸；(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸苯甲酯等(甲基)丙烯酸酯；二丙酮(甲基)丙烯醯胺等(甲基)丙烯醯胺；苯乙烯、乙烯基甲苯、α-甲基苯乙烯等苯乙烯或苯乙烯衍生物；乙烯基正丁基醚等乙烯醇的醚類；馬來酸；馬來酸單甲酯、馬來酸單乙酯等馬來酸單酯；延胡索酸；桂皮酸；伊康酸；及，巴豆酸。這些聚合性單體可使用單獨1種，亦可將2種以上組合使用。高分子成分可以是藉由嵌段共聚所獲得的丙烯酸系嵌段共聚物，其是將選自作為硬化性成分的上述 (甲基)丙烯酸酯化合物中的至少一種作為聚合成分。 在本揭示中，「(甲基)丙烯酸」意指丙烯酸或甲基丙烯酸，「(甲基)丙烯醯胺」意指丙烯醯胺或甲基丙烯醯胺。 The polymer component can be produced, for example, by subjecting a polymerizable monomer to radical polymerization. Examples of the polymerizable monomer include: (meth)acrylic acid; (meth)acrylate esters such as methyl (meth)acrylate, ethyl (meth)acrylate, and benzyl (meth)acrylate; diacetone (Meth)acrylamide such as (meth)acrylamide; styrene or styrene derivatives such as styrene, vinyl toluene, α-methylstyrene; vinyl alcohol ethers such as vinyl n-butyl ether ; Maleic acid; maleic acid monoesters such as monomethyl maleate and monoethyl maleate; fumaric acid; cinnamic acid; itaconic acid; and, crotonic acid. These polymerizable monomers may be used individually by 1 type, or in combination of 2 or more types. The polymer component may be an acrylic block copolymer obtained by block copolymerization using at least one selected from the above (meth)acrylate compounds as a curable component as a polymerization component. In this disclosure, "(meth)acrylic acid" means acrylic acid or methacrylic acid, and "(meth)acrylamide" means acrylamide or methacrylamide.
從成膜性及流動性的觀點來看，高分子成分的重量平均分子量較佳是5000～1000000，更佳是20000～500000。 本揭示中的高分子成分的重量平均分子量是根據凝膠滲透層析(GPC)法進行測定，並根據使用標準聚苯乙烯所作成的校準曲線換算而得的值。將GPC的條件示於下文。 泵：L-6000型(日立製作所股份有限公司製造，商品名) 管柱：Gelpack GL-R420＋Gelpack GL-R430＋Gelpack GL-R440(共3支)(昭和電工材料股份有限公司製造，商品名) 溶析液：四氫呋喃(THF) 測定溫度：40℃ 流速：2.05mL/分鐘 偵測器：L-3300型RI(日立製作所股份有限公司製造，商品名) From the viewpoint of film-forming properties and fluidity, the weight average molecular weight of the polymer component is preferably 5,000 to 1,000,000, more preferably 20,000 to 500,000. The weight average molecular weight of the polymer component in this disclosure is a value measured by gel permeation chromatography (GPC) and converted from a calibration curve prepared using standard polystyrene. The conditions of GPC are shown below. Pump: L-6000 type (manufactured by Hitachi Manufacturing Co., Ltd., trade name) Pipe string: Gelpack GL-R420 + Gelpack GL-R430 + Gelpack GL-R440 (3 pieces in total) (manufactured by Showa Denko Materials Co., Ltd., trade name) Eluate: Tetrahydrofuran (THF) Measuring temperature: 40℃ Flow rate: 2.05mL/min Detector: L-3300 type RI (manufactured by Hitachi Manufacturing Co., Ltd., trade name)
當熱硬化層含有硬化性成分和高分子成分時，例如相對於硬化性成分100質量份，高分子成分的含量較佳是1質量份～500質量份，更佳是10質量份～400質量份，進一步更佳是100質量份～300質量份。 如果相對於硬化性成分100質量份，高分子成分的含量為1質量份以上，則有成膜性提升的傾向。如果相對於硬化性成分100質量份，高分子成分的含量為500質量份以下，則有下述傾向：能夠充分確保熱硬化層的硬化性，能夠獲得充分的壓力緩衝效果。 When the thermosetting layer contains a curable component and a polymer component, for example, relative to 100 parts by mass of the curable component, the content of the polymer component is preferably 1 to 500 parts by mass, and more preferably 10 to 400 parts by mass. , further preferably 100 parts by mass to 300 parts by mass. If the content of the polymer component is 1 part by mass or more relative to 100 parts by mass of the curable component, film-forming properties tend to be improved. If the content of the polymer component is 500 parts by mass or less based on 100 parts by mass of the curable component, the curability of the thermosetting layer will tend to be sufficiently ensured and a sufficient pressure buffering effect will be obtained.
熱硬化層可含有無機充填材。作為無機充填材，可列舉例如：熔融二氧化矽、結晶二氧化矽等二氧化矽；碳酸鈣、黏土、氧化鋁、氮化矽、碳化矽、氮化硼、矽酸鈣、鈦酸鉀、氮化鋁、氧化鈹、氧化鋯、鋯石、鎂橄欖石(forsterite)、塊滑石(steatite)、尖晶石、富鋁紅柱石(mullite)、氧化鈦、玻璃等無機材料。 作為無機充填材的形狀，可列舉：粒子、使粒子球形化後的珠粒、纖維等。 熱硬化層中包含的無機充填材可以僅為1種，亦可以是2種以上的組合。 The thermosetting layer may contain inorganic filler materials. Examples of inorganic fillers include silica such as fused silica and crystalline silica; calcium carbonate, clay, alumina, silicon nitride, silicon carbide, boron nitride, calcium silicate, potassium titanate, Inorganic materials such as aluminum nitride, beryllium oxide, zirconia, zircon, forsterite, steatite, spinel, mullite, titanium oxide, glass. Examples of the shape of the inorganic filler include particles, beads formed by spheroidizing the particles, and fibers. The inorganic filler material contained in the thermosetting layer may be only one type or a combination of two or more types.
當無機充填材是粒子時，例如，其體積平均粒徑較佳是在0.01μm～15.0μm的範圍內，更佳是在0.3μm～5.0μm的範圍內。如果無機充填材的體積平均粒徑為0.01μm以上，則能夠充分獲得藉由無機充填材的添加來進行的熱硬化層的黏度調整等效果。如果無機充填材的體積平均粒徑為15.0μm以下，則能夠在不損害熱硬化層的電子零件的形狀追隨性的情形下有效地控制熱硬化層的硬化性和硬化後的彈性模數。 在本揭示中，所謂「體積平均粒徑」，是根據雷射繞射散射法來進行測定。具體而言，是將下述粒徑設為體積平均粒徑：在使用雷射繞射式粒度分布測定裝置而獲得的以體積為基準的粒度分布曲線中，從小粒徑側起算累積成為50%時的粒徑(D50)。 When the inorganic filler is particles, for example, the volume average particle diameter is preferably in the range of 0.01 μm to 15.0 μm, and more preferably in the range of 0.3 μm to 5.0 μm. If the volume average particle diameter of the inorganic filler is 0.01 μm or more, effects such as viscosity adjustment of the thermosetting layer by the addition of the inorganic filler can be sufficiently obtained. If the volume average particle diameter of the inorganic filler is 15.0 μm or less, the curability of the thermosetting layer and the elastic modulus after curing can be effectively controlled without impairing the shape followability of the electronic component of the thermosetting layer. In this disclosure, the so-called "volume average particle size" is measured based on the laser diffraction scattering method. Specifically, the following particle size is defined as the volume average particle size: In the volume-based particle size distribution curve obtained using a laser diffraction particle size distribution measuring device, the cumulative particle size from the small particle size side becomes 50%. particle size (D50).
當熱硬化層含有無機充填材時，例如，無機充填材的含量較佳是熱硬化層中包含的非揮發成分整體的5質量%～90質量%，更佳是20質量%～80質量%，進一步更佳是60質量%～75質量%。 如果無機充填材的含量為熱硬化層中包含的非揮發成分整體的5質量%以上，則有熱硬化層的熱膨張係數的減少效果變大的傾向，並且有耐濕可靠性提升的傾向。如果無機充填材的含量為熱硬化層中包含的非揮發成分整體的90質量%以下，則有能夠抑制因無機充填材的添加而導致的熱硬化層的成形性下降、粉末掉落等影響。 When the thermosetting layer contains an inorganic filler, for example, the content of the inorganic filler is preferably 5% to 90% by mass, more preferably 20% to 80% by mass of the total non-volatile components contained in the thermosetting layer. More preferably, it is 60% by mass to 75% by mass. If the content of the inorganic filler is 5% by mass or more of the total nonvolatile components contained in the thermosetting layer, the effect of reducing the thermal expansion coefficient of the thermosetting layer tends to be greater, and the moisture resistance reliability tends to be improved. If the content of the inorganic filler is 90% by mass or less of the total nonvolatile components contained in the thermosetting layer, it is possible to suppress the effects of the addition of the inorganic filler on the formability of the thermosetting layer, such as reduced formability and powder dropout.
熱硬化層可根據需要而含有上述成分以外的成分。作為其他成分，可列舉：聚合抑制劑、硬化促進劑、偶合劑、著色劑、界面活性劑、離子捕捉劑等。The thermosetting layer may contain components other than the above components as necessary. Examples of other components include polymerization inhibitors, hardening accelerators, coupling agents, colorants, surfactants, ion scavengers, and the like.
從良好地進行熱硬化層的形成的觀點來看，用於形成熱硬化層的材料可包含溶劑。例如，如果用於形成熱硬化層的材料處於包含溶劑之狀態(清漆狀)，則能夠精度良好地形成希望的厚度的熱硬化層。 作為溶劑，可列舉：甲基乙基酮、二甲苯、甲苯、丙酮、乙二醇單乙基醚、環己酮、乙氧基丙酸乙酯、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺等。 用於形成熱硬化層的材料中包含的溶劑可以僅為1種，亦可以是2種以上的組合。 用於形成熱硬化層的材料中包含的溶劑的比例並無特別限制，能夠配合熱硬化層的製作條件來調節。 From the viewpoint of favorably performing the formation of the thermosetting layer, the material used to form the thermosetting layer may contain a solvent. For example, if the material used to form the thermosetting layer is in a state containing a solvent (in a varnish state), the thermosetting layer can be formed with a desired thickness with high accuracy. Examples of the solvent include: methyl ethyl ketone, xylene, toluene, acetone, ethylene glycol monoethyl ether, cyclohexanone, ethoxyethyl propionate, N,N-dimethylformamide, N,N-dimethylacetamide, etc. The material used to form the thermosetting layer may contain only one type of solvent or a combination of two or more types. The proportion of the solvent contained in the material used to form the thermosetting layer is not particularly limited and can be adjusted according to the production conditions of the thermosetting layer.
從確保充分的壓力緩衝效果的觀點來看，熱硬化層的厚度較佳是10μm以上，更佳是20μm以上，進一步更佳是30μm以上。 從確保充分的導熱性的觀點來看，熱硬化層的厚度較佳是100μm以下，更佳是80μm以下，進一步更佳是60μm以下。 From the viewpoint of ensuring a sufficient pressure buffering effect, the thickness of the thermosetting layer is preferably 10 μm or more, more preferably 20 μm or more, and still more preferably 30 μm or more. From the viewpoint of ensuring sufficient thermal conductivity, the thickness of the thermosetting layer is preferably 100 μm or less, more preferably 80 μm or less, and still more preferably 60 μm or less.
(非熱硬化層) 非熱硬化層的材質並無特別限制，能夠考慮熱壓接時的對於熱量的耐熱性、熱壓接步驟後的從電子零件上剝離的剝離性等來進行選擇。 從對於電子零件的形狀的追隨性和從電子零件上剝離的剝離性的觀點來看，非熱硬化層較佳是具有熱塑性(當進行加熱時會軟化、當進行冷卻時會變硬固之性質)。 (Non-heat hardened layer) The material of the non-thermohardening layer is not particularly limited, and can be selected taking into consideration the heat resistance during thermocompression bonding, the peelability from the electronic component after the thermocompression bonding step, and the like. From the viewpoint of the ability to follow the shape of electronic components and the peelability from electronic components, the non-thermosetting layer preferably has thermoplastic properties (softens when heated and hardens when cooled). ).
非熱硬化層例如可以是包含熱塑性樹脂、銅、鋁等金屬、無機氧化物等之層。 作為熱塑性樹脂，具體而言，可列舉：聚乙烯、聚丙烯等聚烯烴；聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚對苯二甲酸丁二酯等聚酯；聚氯乙烯、聚碳酸酯、聚醯亞胺、丙烯腈-丁二烯-苯乙烯(ABS)樹脂、丙烯腈-苯乙烯(AS)樹脂、丙烯酸樹脂、聚醯胺、聚醯胺醯亞胺等。 非熱硬化層中包含的熱塑性樹脂可以僅為1種，亦可以是2種以上。 The non-thermosetting layer may be a layer containing, for example, a thermoplastic resin, a metal such as copper or aluminum, an inorganic oxide, or the like. Specific examples of the thermoplastic resin include polyolefins such as polyethylene and polypropylene; polyesters such as polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate; Vinyl chloride, polycarbonate, polyimide, acrylonitrile-butadiene-styrene (ABS) resin, acrylonitrile-styrene (AS) resin, acrylic resin, polyamide, polyamide imide, etc. . The thermoplastic resin contained in the non-thermosetting layer may be only one type, or may be two or more types.
當非熱硬化層包含熱塑性樹脂時，從耐熱性和加工性(外形加工、厚度調整等)的觀點來看，作為熱塑性樹脂，較佳是聚對苯二甲酸乙二酯和聚醯亞胺。When the non-thermosetting layer contains a thermoplastic resin, from the viewpoint of heat resistance and workability (shape processing, thickness adjustment, etc.), polyethylene terephthalate and polyimide are preferred as the thermoplastic resin.
非熱硬化層可以是單層，亦可以是複數層積層而成的狀態。例如，非熱硬化層可以是包含熱塑性樹脂之層與包含金屬之層積層而成的狀態。The non-thermal hardening layer may be a single layer or a plurality of layers laminated. For example, the non-thermosetting layer may be a state in which a layer containing a thermoplastic resin and a layer containing a metal are laminated.
從對於電子零件的形狀的追隨性的觀點來看，非熱硬化層的厚度較佳是9μm以下，更佳是8μm以下，進一步更佳是7μm以下。 從避免熱壓接時的破損等不良狀況的觀點來看，非熱硬化層的厚度較佳是1μm以上，更佳是2μm以上，進一步更佳是3μm以上。 From the viewpoint of conformability to the shape of electronic components, the thickness of the non-thermosetting layer is preferably 9 μm or less, more preferably 8 μm or less, and still more preferably 7 μm or less. From the viewpoint of avoiding defects such as damage during thermocompression bonding, the thickness of the non-thermosetting layer is preferably 1 μm or more, more preferably 2 μm or more, and still more preferably 3 μm or more.
(保護層) 緩衝片可根據需要而在熱硬化層的與非熱硬化層相對的一側的相反側具有保護層。亦即，緩衝片可依序具有非熱硬化層、熱硬化層及保護層。 保護層能夠發揮例如保護緩衝片的熱硬化層的表面之作用、熱壓接步驟後的緩衝片容易從加熱用構件上剝離之作用等。 (protective layer) If necessary, the buffer sheet may have a protective layer on the opposite side of the thermosetting layer to the side opposite to the non-thermosetting layer. That is, the buffer sheet may have a non-thermohardening layer, a thermosetting layer and a protective layer in this order. The protective layer can function, for example, to protect the surface of the thermosetting layer of the cushioning sheet, to facilitate the cushioning sheet to be peeled off from the heating member after the thermocompression bonding step, and the like.
保護層的材質並無特別限制，能夠根據希望的功能來選擇。例如可以是包含樹脂、銅、鋁等金屬、無機氧化物等之層。樹脂可以是作為熱硬化層中包含的硬化性成分來例示的硬化性成分、作為非熱硬化層中包含的熱塑性樹脂來例示的熱塑性樹脂等。The material of the protective layer is not particularly limited and can be selected according to the desired function. For example, it may be a layer containing resin, metals such as copper and aluminum, inorganic oxides, and the like. The resin may be a curable component exemplified as the curable component contained in the thermosetting layer, a thermoplastic resin exemplified as the thermoplastic resin contained in the non-thermosetting layer, or the like.
保護層的厚度並無特別限制，能夠根據其功能來選擇。例如可在1μm～50μm的範圍內。從確保充分的強度的觀點來看，保護層的厚度較佳是10μm以上。從確保充分的導熱性的觀點來看，保護層的厚度較佳是50μm以下。The thickness of the protective layer is not particularly limited and can be selected according to its function. For example, it may be in the range of 1 μm to 50 μm. From the viewpoint of ensuring sufficient strength, the thickness of the protective layer is preferably 10 μm or more. From the viewpoint of ensuring sufficient thermal conductivity, the thickness of the protective layer is preferably 50 μm or less.
參照圖式來說明本揭示的緩衝片和使用緩衝片的熱壓接步驟的具體例。但是本揭示不限定於此具體例。Specific examples of the buffer sheet of the present disclosure and the thermocompression bonding step using the buffer sheet will be described with reference to the drawings. However, the present disclosure is not limited to this specific example.
第1圖是繪示緩衝片的構成的一例的概略圖。第1圖所示的緩衝片1依序具有保護層1-a、熱硬化層1-b及非熱硬化層1-c。FIG. 1 is a schematic diagram showing an example of the structure of a buffer sheet. The buffer sheet 1 shown in Figure 1 has a protective layer 1-a, a thermosetting layer 1-b and a non-thermosetting layer 1-c in this order.
第2圖～第5圖是繪示使用緩衝片的熱壓接步驟的一例的概略圖。 如第2圖所示，以電子零件2的凸塊3與基板5上的焊墊(pad)或線路4相對向的方式將電子零件2配置於基板5上。凸塊3和焊墊或線路4是由焊料等能夠利用熱壓接的熱量來熔融的金屬材料所構成。 Figures 2 to 5 are schematic diagrams illustrating an example of a thermocompression bonding step using a buffer sheet. As shown in FIG. 2 , the electronic component 2 is arranged on the substrate 5 such that the bumps 3 of the electronic component 2 face the pads or lines 4 on the substrate 5 . The bumps 3 and the pads or lines 4 are made of metal materials such as solder that can be melted by the heat of thermocompression bonding.
繼而，如第3圖所示，使用加熱用構件6來將電子零件2向基板5側按壓。此時，在加熱用構件6與電子零件2之間配置有緩衝片1。第3圖所示的緩衝片1是以非熱硬化層1-c與電子零件2接觸的方式配置。Next, as shown in FIG. 3 , the heating member 6 is used to press the electronic component 2 toward the substrate 5 side. At this time, the buffer sheet 1 is arranged between the heating member 6 and the electronic component 2 . The buffer sheet 1 shown in FIG. 3 is arranged so that the non-thermosetting layer 1 - c is in contact with the electronic component 2 .
如第4圖所示，當使用加熱用構件6來將電子零件2向基板5側按壓時，緩衝片1的熱硬化層1-b會以配合電子零件2的形狀的方式變形。此時，非熱硬化層1-c亦會以配合熱硬化層1-b的形狀的方式變形。 本揭示的緩衝片的非熱硬化層1-c的厚度為10μm以下，因此非熱硬化層1-c對於熱硬化層1-b的變形的追隨性優異。因此，能夠充分確保緩衝片1與電子零件2的接觸面積。 利用由加熱用構件6所給予的熱量使熱硬化層1-b硬化，凸塊3和焊墊或線路4中包含的金屬材料熔融，來將兩者接合。 As shown in FIG. 4 , when the heating member 6 is used to press the electronic component 2 toward the substrate 5 side, the thermosetting layer 1 - b of the buffer sheet 1 is deformed to match the shape of the electronic component 2 . At this time, the non-thermosetting layer 1-c is also deformed to match the shape of the thermosetting layer 1-b. The thickness of the non-thermosetting layer 1-c of the buffer sheet of the present disclosure is 10 μm or less, so the non-thermosetting layer 1-c has excellent followability to the deformation of the thermosetting layer 1-b. Therefore, the contact area between the buffer sheet 1 and the electronic component 2 can be sufficiently ensured. The thermosetting layer 1 - b is hardened by the heat given by the heating member 6 , and the metal material contained in the bump 3 and the bonding pad or the wiring 4 is melted, and the two are joined.
熱壓接步驟結束後，如第5圖所示，將脫模片1從電子零件2上去除。緩衝片1由於在與電子零件2接觸的一側具有非熱硬化層1-c，因此能夠在熱硬化層1-b不附著於電子零件2上的情形下將緩衝片1從電子零件2去除。After the thermocompression bonding step is completed, remove the release sheet 1 from the electronic component 2 as shown in Figure 5. Since the buffer sheet 1 has the non-thermosetting layer 1-c on the side in contact with the electronic component 2, the buffer sheet 1 can be removed from the electronic component 2 without the thermosetting layer 1-b adhering to the electronic component 2. .
＜電子零件的構裝方法及電子零件裝置的製造方法＞ 本揭示的電子零件的構裝方法是一種電子零件的構裝方法，其具有使用加熱用構件來將電子零件與基板熱壓接的步驟，前述熱壓接是在前述加熱用構件與前述電子零件之間配置有上述緩衝片的狀態下實行。 ＜Construction method of electronic components and manufacturing method of electronic component device＞ The method of assembling electronic components of the present disclosure is a method of assembling electronic components, which has the step of using a heating member to thermally compress the electronic component and the substrate. The thermal compression bonding is performed between the heating member and the electronic component. It is executed with the above-mentioned buffer sheet arranged between them.
本揭示的電子零件裝置的製造方法是一種電子零件裝置的製造方法，其具有使用加熱用構件來將電子零件與基板熱壓接的步驟，前述熱壓接是在前述加熱用構件與前述電子零件之間配置有上述緩衝片的狀態下實行。The manufacturing method of the electronic component device of the present disclosure is a manufacturing method of the electronic component device, which has the step of using a heating member to thermally compress the electronic component and the substrate. The thermal compression bonding is between the heating member and the electronic component. It is executed with the above-mentioned buffer sheet arranged between them.
以下，有時將本揭示的電子零件的構裝方法和本揭示的電子零件裝置的製造方法一併稱為「本揭示的方法」。 根據本揭示的方法，能夠以良好的狀態將電子零件構裝於基板上。尤其適合於將複數の電子零件構裝於基板上的情況。例如即便在以高密度構裝小型電子零件的情況下，亦能夠有效地抑制連接不良的發生。 Hereinafter, the method of constructing the electronic component of the present disclosure and the method of manufacturing the electronic component device of the present disclosure may be collectively referred to as “the method of the present disclosure”. According to the method of the present disclosure, electronic components can be mounted on the substrate in a good state. It is particularly suitable for mounting multiple electronic components on a substrate. For example, even when small electronic components are constructed at high density, the occurrence of connection failures can be effectively suppressed.
本揭示的方法可以是以高密度將電子零件構裝於基板上(亦即，鄰接的電子零件間的距離較小)的方法。 例如，鄰接的電子零件間的距離(在距離為固定的情況下為其最小值)可以是300μm以下，亦可以是200μm以下，亦可以是100μm以下，亦可以是50μm以下。鄰接的電子零件間的距離的下限值(在距離不固定的情況下為其最小值)並無特別限制，可以是10μm以上。 The method of the present disclosure may be a method of mounting electronic components on a substrate with high density (that is, the distance between adjacent electronic components is small). For example, the distance between adjacent electronic components (the minimum value when the distance is fixed) may be 300 μm or less, 200 μm or less, 100 μm or less, or 50 μm or less. The lower limit of the distance between adjacent electronic components (the minimum value when the distance is not fixed) is not particularly limited, and may be 10 μm or more.
在本揭示的方法中，實施熱壓接時的條件並無特別限制。例如，加熱用構件的溫度可在25℃～400℃的範圍內。 從獲得良好的壓力緩衝效果的觀點來看，加熱用構件的溫度較佳是緩衝片成為可變形的狀態的溫度。 從避免緩衝片附著於電子零件的觀點來看，加熱用構件的溫度較佳是緩衝片中包含的成分不會熔融的溫度。 加熱用構件與電子零件接觸的時間(熱壓接時間)可在1秒～600秒的範圍內。 In the method of the present disclosure, the conditions when performing thermocompression bonding are not particularly limited. For example, the temperature of the heating member may be in the range of 25°C to 400°C. From the viewpoint of obtaining a good pressure buffering effect, the temperature of the heating member is preferably a temperature at which the buffer sheet becomes deformable. From the viewpoint of preventing the buffer sheet from adhering to electronic components, the temperature of the heating member is preferably a temperature at which components contained in the buffer sheet do not melt. The contact time between the heating member and the electronic component (thermocompression bonding time) can be in the range of 1 second to 600 seconds.
本揭示的方法中使用的電子零件的種類並無特別限制。可列舉例如：二極體、電晶體、閘流體(thyristor)等半導體元件；及，用於電子零件裝置的各種零件。 半導體元件的種類並無特別限制，能夠從下述中選擇：LED；矽、鍺等元素半導體；砷化鎵、磷化銦等化合物半導體等。 The types of electronic components used in the method of the present disclosure are not particularly limited. Examples include semiconductor components such as diodes, transistors, and thyristors; and various components used in electronic component devices. The type of semiconductor element is not particularly limited and can be selected from the following: LED; element semiconductors such as silicon and germanium; compound semiconductors such as gallium arsenide and indium phosphide; and the like.
在某一實施態樣中，本揭示的方法使用微型LED作為電子零件。微型LED是一種比以往的LED更小的小型(例如最大直徑小於1000μm)LED，被用於液晶畫面的直下式背光等。為了實現圖像的高精細化，有在基板上以高密度構裝微型LED(亦即，微型LED的間隔較狹窄)的傾向。根據本揭示的方法，能夠良好地實行微型LED的高密度構裝。In one implementation, the disclosed method uses micro-LEDs as electronic components. Micro LED is a small LED that is smaller than conventional LEDs (for example, the maximum diameter is less than 1000 μm) and is used in direct-lit backlights of LCD screens. In order to realize high-definition images, there is a tendency to construct micro-LEDs at a high density on a substrate (that is, the intervals between micro-LEDs are relatively narrow). According to the method of the present disclosure, high-density packaging of micro-LEDs can be successfully implemented.
本揭示的方法中使用的電子零件的凸塊的材質並無特別限制。可列舉例如：金、銀、銅、焊料、錫、鎳、氧化銦錫(ITO)、銦等。作為焊料，可列舉以錫-銀、錫-鉛、錫-鉍、錫-銅等作為主成分之合金。凸塊的材質可以僅為1種，亦可以是2種以上的組合。凸塊可具有複數種金屬積層而成的狀態的結構。The material of the bumps of the electronic component used in the disclosed method is not particularly limited. Examples include gold, silver, copper, solder, tin, nickel, indium tin oxide (ITO), indium, and the like. Examples of the solder include alloys containing tin-silver, tin-lead, tin-bismuth, tin-copper, etc. as main components. The material of the bump may be only one type, or may be a combination of two or more types. The bump may have a structure in which a plurality of metals are laminated.
本揭示的方法中使用的基板的材質並無特別限制。可列舉例如：玻璃、玻璃環氧樹脂、聚酯、陶瓷、環氧樹脂、雙馬來醯亞胺三𠯤、聚醯亞胺等。The material of the substrate used in the method of the present disclosure is not particularly limited. Examples include glass, glass epoxy resin, polyester, ceramics, epoxy resin, bismaleimide triamide, polyimide, and the like.
基板可在表面具有線路圖案。作為線路圖案，可列舉：將形成於基板表面的金屬層的不需要的地方蝕刻去除而形成的線路圖案、對基板表面施加金屬鍍覆而形成的線路圖案、在基板表面印刷導電性物質而形成的線路圖案等。 線路圖案的材質並無特別限制，可列舉：金、銀、銅、焊料、錫、鎳、氧化銦錫(ITO)、銦等。作為焊料，可列舉以錫-銀、錫-鉛、錫-鉍、錫-銅等作為主成分之合金。線路圖案的材質可以僅為1種，亦可以是2種以上的組合。線路圖案可具有複數種金屬積層而成的狀態的結構。 The substrate may have a circuit pattern on the surface. Examples of the circuit pattern include: a circuit pattern formed by etching and removing unnecessary areas of a metal layer formed on the substrate surface; a circuit pattern formed by metal plating the substrate surface; and a circuit pattern formed by printing a conductive material on the substrate surface. line patterns, etc. The material of the circuit pattern is not particularly limited, and may include: gold, silver, copper, solder, tin, nickel, indium tin oxide (ITO), indium, etc. Examples of the solder include alloys containing tin-silver, tin-lead, tin-bismuth, tin-copper, etc. as main components. The material of the circuit pattern may be only one type, or may be a combination of two or more types. The wiring pattern may have a structure in which a plurality of types of metals are laminated.
基板可在表面具有被稱為焊墊的連接部。作為焊墊，可列舉：將形成於基板表面的金屬層的不需要的地方蝕刻去除而形成的焊墊、對基板表面施加金屬鍍覆而形成的焊墊、在基板表面印刷導電性物質而形成的焊墊等。 焊墊的材質並無特別限制，可列舉：金、銀、銅、焊料、錫、鎳、氧化銦錫(ITO)、銦等。作為焊料，可列舉以錫-銀、錫-鉛、錫-鉍、錫-銅等作為主成分之合金。焊墊的材質可以僅為1種，亦可以是2種以上的組合。焊墊可具有複數種金屬積層而成的狀態的結構。 The substrate may have connections called pads on the surface. Examples of the bonding pad include: a bonding pad formed by etching away unnecessary areas of the metal layer formed on the substrate surface; a bonding pad formed by metal plating the substrate surface; and a pad formed by printing a conductive material on the substrate surface. soldering pads, etc. The material of the soldering pad is not particularly limited, and can include: gold, silver, copper, solder, tin, nickel, indium tin oxide (ITO), indium, etc. Examples of the solder include alloys containing tin-silver, tin-lead, tin-bismuth, tin-copper, etc. as main components. The material of the soldering pad can be only one type, or a combination of two or more types. The bonding pad may have a structure in which a plurality of metals are laminated.
利用本揭示的方法來獲得的電子零件裝置並無特別限制。例如可以是電腦、電視、遊戲機、行動電話、汽車導航等具有圖像顯示功能的電子零件裝置。 本揭示的方法能夠以高密度構裝小型電子零件於基板上，因此亦能夠適合用於製造具備直下式背光之圖像顯示裝置。 [實施例] The electronic component device obtained by the method of the present disclosure is not particularly limited. For example, it may be an electronic component device with an image display function such as a computer, a television, a game console, a mobile phone, a car navigation system, or the like. The disclosed method can assemble small electronic components on a substrate at high density, and therefore can also be suitable for manufacturing image display devices with direct backlights. [Example]
以下，根據實施例來具體地說明本揭示，但是本揭示不限定於這些實施例。Hereinafter, the present disclosure will be specifically described based on Examples, but the present disclosure is not limited to these Examples.
(熱硬化層用組成物的製備) 在具備攪拌機之燒瓶中，裝入4g作為高分子成分的丙烯酸系嵌段共聚物(可樂麗股份有限公司製造，商品名「LA4285」)、2g作為硬化性成分的異氰脲酸參(2-丙烯醯氧乙基)酯(昭和電工材料股份有限公司製造，商品名「FA731A」)，進一步加入0.08g作為聚合起始劑的過氧化二異丙苯(日油股份有限公司製造，商品名「PERCUMYL D」)、16．7g作為無機充填材的二氧化矽粒子(Admatechs股份有限公司製造，商品名「SE2050」，體積平均粒徑：0.5μm)、12.8g作為溶劑的甲基乙基酮。將該等攪拌來進行混合，而獲得清漆狀的熱硬化層用組成物。 (Preparation of composition for thermosetting layer) In a flask equipped with a stirrer, 4 g of acrylic block copolymer (manufactured by Kuraray Co., Ltd., trade name "LA4285") as a polymer component and 2 g of ginseng isocyanurate (2- Acryloxyethyl) ester (manufactured by Showa Denko Materials Co., Ltd., trade name "FA731A"), and further added 0.08g of dicumyl peroxide (manufactured by NOF Co., Ltd., trade name "FA731A") as a polymerization initiator PERCUMYL D"), 16.7 g of silica particles as an inorganic filler (manufactured by Admatechs Co., Ltd., trade name "SE2050", volume average particle diameter: 0.5 μm), and 12.8 g of methyl ethyl ketone as a solvent. These were stirred and mixed to obtain a varnish-like composition for a thermosetting layer.
(緩衝片的製作) 將所獲得的熱硬化層用組成物塗佈在作為保護層的聚醯亞胺膜(東麗杜邦股份有限公司製造，商品名「Kapton 100H」，厚度：25μm)上，以70℃的乾燥機利用10分鐘的加熱來加以乾燥，而在聚醯亞胺膜上形成厚度為50μm的熱硬化層。 將作為非熱硬化層的聚對苯二甲酸乙二酯膜(東麗股份有限公司製造，厚度：6μm)重疊在熱硬化層上，使用熱輥層壓機以100℃、0.5MPa、1.0m/分鐘的條件加以貼合，藉此獲得緩衝片，該緩衝片依序具有保護層、熱硬化層及非熱硬化層。 (Production of buffer sheet) The obtained composition for the thermosetting layer was coated on a polyimide film (manufactured by Toray DuPont Co., Ltd., trade name "Kapton 100H", thickness: 25 μm) as a protective layer, and dried in a dryer at 70°C. It was dried by heating for 10 minutes, and a thermosetting layer with a thickness of 50 μm was formed on the polyimide film. A polyethylene terephthalate film (manufactured by Toray Co., Ltd., thickness: 6 μm) as a non-thermosetting layer was laminated on the thermosetting layer, using a heat roller laminator at 100°C, 0.5MPa, 1.0m /min conditions to obtain a buffer sheet, which has a protective layer, a thermosetting layer and a non-thermosetting layer in this order.
本說明書所記載之所有文獻、專利申請案及技術規格，是以等同於具體且個別記述以參照來納入各文獻、專利申請案、及技術規格的方式，而引用來納入本說明書中。All documents, patent applications, and technical specifications described in this specification are incorporated by reference into this specification in the same manner as if each document, patent application, or technical specification was specifically and individually stated to be incorporated by reference.
1:緩衝片 1-a:保護層 1-b:熱硬化層 1-c:非熱硬化層 2:電子零件 3:凸塊 4:線路 5:基板 6:加熱用構件 1: Buffer sheet 1-a:Protective layer 1-b: Thermal hardened layer 1-c: Non-heat hardening layer 2: Electronic parts 3: Bump 4: Line 5:Substrate 6: Heating components
第1圖是繪示緩衝片的構成的一例的概略圖。 第2圖是繪示使用緩衝片的熱壓接步驟的一例的概略圖。 第3圖是繪示使用緩衝片的熱壓接步驟的一例的概略圖。 第4圖是繪示使用緩衝片的熱壓接步驟的一例的概略圖。 第5圖是繪示使用緩衝片的熱壓接步驟的一例的概略圖。 FIG. 1 is a schematic diagram showing an example of the structure of a buffer sheet. FIG. 2 is a schematic diagram illustrating an example of a thermocompression bonding step using a buffer sheet. FIG. 3 is a schematic diagram illustrating an example of a thermocompression bonding step using a buffer sheet. FIG. 4 is a schematic diagram illustrating an example of a thermocompression bonding step using a buffer sheet. FIG. 5 is a schematic diagram illustrating an example of a thermocompression bonding step using a buffer sheet.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in order of storage institution, date and number) without Overseas storage information (please note in order of storage country, institution, date, and number) without
1:緩衝片 1: Buffer sheet
1-a:保護層 1-a:Protective layer
1-b:熱硬化層 1-b: Thermal hardened layer
1-c:非熱硬化層 1-c: Non-heat hardening layer
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| TW111121789A TW202348713A (en) | 2022-06-13 | 2022-06-13 | Buffer sheet, method for mounting electronic components, and method for producing electronic component device |
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