TW202344720A - Plating apparatus for vacuum plating and vacuum plating method - Google Patents
Plating apparatus for vacuum plating and vacuum plating method Download PDFInfo
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- 238000007747 plating Methods 0.000 title claims abstract description 388
- 238000000034 method Methods 0.000 title claims description 42
- 239000007788 liquid Substances 0.000 claims abstract description 111
- 230000006837 decompression Effects 0.000 claims abstract description 21
- 238000003825 pressing Methods 0.000 claims abstract description 6
- 238000011282 treatment Methods 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 20
- 238000007872 degassing Methods 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000003860 storage Methods 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000007599 discharging Methods 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 description 20
- 230000009467 reduction Effects 0.000 description 17
- 210000004907 gland Anatomy 0.000 description 16
- 238000002203 pretreatment Methods 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 8
- 230000036544 posture Effects 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000007772 electroless plating Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005266 casting Methods 0.000 description 5
- 238000007781 pre-processing Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004800 polyvinyl chloride Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229920000915 polyvinyl chloride Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012510 hollow fiber Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
本發明係關於對於半導體用晶圓及印刷電路板等被鍍物進行鍍覆處理之鍍覆裝置，尤其關於在鍍覆處理時可減壓而進行鍍覆處理之鍍覆裝置及使用該鍍覆裝置之減壓鍍覆處理方法。 The present invention relates to a plating device that performs plating processing on objects to be plated, such as semiconductor wafers and printed circuit boards. In particular, it relates to a plating device that can perform plating processing by reducing pressure during plating processing and the use of the plating device. Pressure reduction plating treatment method of the device.
近年來，係對於半導體用的晶圓及印刷電路板等的電子基板等被鍍物進行各種的鍍覆處理。最近，隨著電子基板等的輕薄短小化的進展，要求微細的鍍覆處理的傾向也增強。例如，半導體用的晶圓之類的被鍍物，會要求藉由鍍覆處理將微小的通孔(via)進行填孔。而且，該通孔的深寬比(aspect ratio)確實地轉換為較大的值。 In recent years, various plating processes have been performed on objects to be plated, such as semiconductor wafers and electronic substrates such as printed circuit boards. Recently, as electronic substrates and the like are becoming lighter, thinner and smaller, there is an increasing tendency to require fine plating processes. For example, objects to be plated, such as semiconductor wafers, require filling of tiny vias through a plating process. Furthermore, the aspect ratio of the through hole is reliably converted to a larger value.
一般而言，在鍍覆處理中，已知的鍍覆不良的主要原因為鍍液中的氣泡、附著於鍍覆處理面的氣泡。在進行微小的通孔的填孔等的鍍覆處理之情況，若通孔內或通孔周邊有氣泡存在，就容易發生鍍覆不良，而無法進行期望的鍍覆處理。 Generally speaking, in plating processing, it is known that the main causes of plating failure are bubbles in the plating solution and bubbles adhering to the plating surface. When performing a plating process such as filling a minute through hole, if bubbles exist in or around the through hole, plating defects are likely to occur and the desired plating process cannot be performed.
已有如下述的先前技術被提出作為如上所述的鍍液中的氣泡的對策。就其中一個技術而言，係提出下列之方法：以使用了脫氣膜模組
及真空泵之脫氣裝置將鍍覆的前處理液中的溶存氧進行脫氣，然後以該經過脫氣的前處理液進行被鍍物的前處理，再進行電解或無電解鍍覆處理(例如專利文獻1)。在此專利文獻1中，也提出了將被鍍物浸到經過脫氣的鍍液中而進行電解或無電解鍍覆處理。
The following prior art has been proposed as a countermeasure against bubbles in the plating solution as described above. As for one of the technologies, the following method is proposed: using a degassing membrane module
The degassing device of the vacuum pump degasses the dissolved oxygen in the plating pre-treatment liquid, and then uses the degassed pre-treatment liquid to pre-treat the object to be plated, and then performs electrolytic or electroless plating treatment (such as Patent document 1). In
此外，也有提出下列技術：在將被鍍物的鍍覆對象面朝向下方的狀態下進行鍍覆處理之噴流式的鍍覆裝置中，進行如下述的前處理，亦即將被鍍物載置於前處理槽上部，且對被鍍物進行加熱，並使得前處理槽內減壓到9hPa至40hPa，同時將10℃至30℃的水供給到前處理槽內，將位在前處理槽內的氣體置換為氣化水，使前處理槽內充滿水而使水與鍍覆對象面接觸，然後，將大氣導入前處理槽內而使其成為大氣壓，使水附著於鍍覆對象面(例如專利文獻2)。再者，就使鍍液等各種液體滲入到微細的凹孔的內部之方法而言，已有提出一種鍍覆裝置，該鍍覆裝置係具備有：用來使由半導體晶圓及帽蓋(cap)所構成的液體收納部減壓之壓力控制手段、以及使晶圓的背面減壓之真空吸盤(vacuum chuck)(專利文獻3)。 In addition, the following technology has also been proposed: in a jet-type plating apparatus that performs plating processing with the plating surface of the object to be plated facing downward, the following preprocessing is performed, that is, the object to be plated is placed on The upper part of the pre-treatment tank is heated, and the pressure in the pre-treatment tank is reduced to 9hPa to 40hPa. At the same time, water at 10°C to 30°C is supplied into the pre-treatment tank, and the water in the pre-treatment tank is The gas is replaced with vaporized water, and the pre-treatment tank is filled with water to bring the water into contact with the surface to be plated. Then, the atmosphere is introduced into the pre-treatment tank to bring it to atmospheric pressure, so that the water adheres to the surface to be plated (for example, patent Document 2). Furthermore, as a method of penetrating various liquids such as a plating solution into the inside of fine concave holes, a plating device has been proposed. The plating device is equipped with a semiconductor wafer and a cap ( cap) and a vacuum chuck that depressurizes the backside of the wafer (Patent Document 3).
而且，在噴流式的鍍覆裝置中，也有提出一種技術，係在具有鍍槽的鍍覆裝置中，鍍槽設置有用來使鍍槽本身轉動之轉動手段，該鍍槽具備有：具備在載置有被鍍物之際防止鍍液洩漏之液封(liquid seal)的開口部、供給鍍液的供液部及將鍍液排出的排液部、以及與所載置的被鍍物相向的陽極(anode)(例如專利文獻4)。 Furthermore, in a jet-type plating device, a technique has also been proposed. In a plating device having a plating tank, the plating tank is provided with a rotation means for rotating the plating tank itself. The plating tank is equipped with: The opening of the liquid seal to prevent leakage of the plating solution when the object to be plated is placed, the liquid supply part for supplying the plating solution, the drain part for discharging the plating solution, and the opening facing the placed object to be plated Anode (for example, Patent Document 4).
根據上述的先前技術的各個鍍覆處理技術，可良好地進行某程度的微小的通孔的填孔、微細配線間的溝槽(trench)等的鍍覆處理。然而，現況是，最近的電子基板等的輕薄短小化越來越進展，使得例如通孔的微 小化也越發顯著，要求一種鍍覆處理技術，能夠確實地對於例如通孔徑5μm，通孔深度100μm這樣的高深寬比的微細的通孔進行良好的鍍覆處理。 According to each of the above-mentioned conventional plating processing techniques, it is possible to perform plating processing satisfactorily for filling a certain degree of minute via holes, trenches between fine wirings, and the like. However, the current situation is that electronic substrates and the like have recently become thinner, thinner and smaller, resulting in micro-structures such as through-holes. Miniaturization is also becoming more and more significant, and a plating processing technology is required that can reliably perform good plating processing on fine via holes with a high aspect ratio such as a via hole diameter of 5 μm and a via hole depth of 100 μm.
此外，在半導體用的晶圓及印刷電路板等的電子基板等被鍍物方面，例如，除了藉由銅進行的通孔之填孔鍍覆處理之外，已知還會施行鎳、鈀、金等複數種鍍覆處理。關於如此的複數種鍍覆處理，可採用電解鍍覆、無電解鍍覆等各種鍍覆處理方法。因此，現況是：在對於被鍍物進行複數種鍍覆處理的情況，一般而言，會分別準備與各種鍍覆處理對應的鍍覆裝置，將被鍍物搬送到各個鍍覆裝置進行各個鍍覆處理。 In addition, in the case of plated objects such as electronic substrates such as semiconductor wafers and printed circuit boards, it is known that in addition to hole filling plating of through holes using copper, nickel, palladium, Gold and other plating treatments. Regarding such plural types of plating treatments, various plating treatment methods such as electrolytic plating and electroless plating can be used. Therefore, the current situation is that when a plurality of plating treatments are performed on an object to be plated, plating devices corresponding to each plating treatment are generally prepared, and the objects to be plated are transported to each plating device and plating is performed on each of the plating devices. Overwrite processing.
如上所述，對於被鍍物進行複數種鍍覆處理之際，要準備與各種鍍覆處理對應的鍍覆裝置，惟如此的對應會導致製造設備大型化，增加製造成本，就有效率的製造而言，仍待改進。因此，若是可用一個鍍覆裝置來對應複數種鍍覆處理，就可謀求製造設備的省空間化，實現有效率的製造，所以也期待能夠實現如此的泛用的鍍覆裝置。 As mentioned above, when a plurality of plating treatments are performed on an object to be plated, plating equipment corresponding to each plating treatment must be prepared. However, such a response will lead to an increase in the size of the manufacturing equipment and an increase in manufacturing costs. Efficient manufacturing However, there is still room for improvement. Therefore, if one plating device can be used to handle a plurality of plating processes, space saving in manufacturing equipment can be achieved and efficient manufacturing can be achieved. Therefore, it is expected that such a universal plating device can be realized.
[先前技術文獻] [Prior technical literature]
[專利文獻] [Patent Document]
[專利文獻1]日本特許4043192號 [Patent Document 1] Japanese Patent No. 4043192
[專利文獻2]日本特開2014-47391號公報 [Patent Document 2] Japanese Patent Application Publication No. 2014-47391
[專利文獻3]日本特開平11-87273號 [Patent Document 3] Japanese Patent Application Laid-Open No. 11-87273
[專利文獻4]日本特許3513130號 [Patent Document 4] Japanese Patent No. 3513130
本發明係有鑒於以上所述的情況而研創者，提供可極力抑制氣泡等對於在被鍍物的鍍覆對象面形成的微小的通孔及溝槽的影響，而確實地進行鍍覆處理之鍍覆處理技術。而且，提供可用一台鍍覆裝置來對應複數種鍍覆處理之鍍覆處理技術。 The present invention was developed in view of the above-mentioned circumstances, and provides a method for reliably performing plating processing while minimizing the influence of bubbles and the like on minute via holes and grooves formed on the surface of the object to be plated. Plating treatment technology. Furthermore, we provide plating treatment technology that can handle multiple types of plating treatments with one plating equipment.
為了解決上述課題，本發明係關於一種減壓鍍覆處理用之鍍覆裝置，該鍍覆裝置係具備有：鍍槽，係具備有開口部、供液部以及排液部，該開口部係具備在載置有被鍍物之際防止鍍液的洩漏之密封件(seal)，該供液部係供給鍍液，該排液部係將鍍液排出；轉動手段，係用來使鍍槽本身轉動；槽內減壓手段，係用來使由載置於開口部的被鍍物的鍍覆對象面與鍍槽所形成的槽內空間減壓；以及被鍍物背面按壓蓋，係按壓載置於開口部的被鍍物的周緣且具備有用來使背面空間減壓的背面減壓手段，該背面空間係形成於屬於鍍覆對象面的反面之被鍍物背面之側；其中，槽內減壓手段係具備：減壓用凹穴(pocket)，係設於在使鍍槽轉動而使被鍍物成為傾斜姿勢之際位於傾斜姿勢的上側的鍍槽內壁；減壓用管，係連接於減壓用凹穴的排氣口；以及排液用管，係用來將殘留於減壓用管的鍍液排出；並且，減壓用管係從減壓用凹穴往鍍槽中央方向延伸設置。根據本發明，可藉由使鍍槽內形成的槽內空間減壓而確實地去除鍍液中的氣泡、附著於被鍍物的鍍覆處理面的氣泡，因此不會有於位在被鍍物的鍍覆對象面的微小區域(例如20以上的高深寬比的通孔及溝槽等)發生鍍覆空洞等的鍍覆不良的情形，可進行所希望的鍍覆處理。 In order to solve the above problems, the present invention relates to a plating device for pressure-reduced plating processing. The plating device is provided with a plating tank and is provided with an opening, a liquid supply part, and a liquid discharge part. The opening is a It is equipped with a seal that prevents the leakage of the plating solution when the object to be plated is placed. The liquid supply part supplies the plating solution, and the drain part discharges the plating solution; the rotation means is used to move the plating tank It rotates by itself; the decompression means in the tank is used to depressurize the space in the tank formed by the plating target surface of the object to be plated placed in the opening and the plating tank; and the pressure cover on the back of the object to be plated is pressed The peripheral edge of the object to be plated is placed in the opening and is provided with a back surface decompression means for decompressing the back surface space formed on the back surface of the object to be plated which is opposite to the surface to be plated; wherein, the groove The internal pressure reducing means includes: a pressure reducing pocket (pocket), which is provided on the inner wall of the plating tank located above the tilted posture when the plating tank is rotated so that the object to be plated is in a tilted posture; and a pressure reducing pipe, It is connected to the exhaust port of the pressure reducing cavity; and a drain pipe is used to discharge the plating liquid remaining in the pressure reducing pipe; and, the pressure reducing pipe is directed from the pressure reducing cavity to the plating tank. Extended setting in the central direction. According to the present invention, air bubbles in the plating solution and air bubbles adhering to the plated surface of the object to be plated can be reliably removed by depressurizing the inner space formed in the plating bath. When plating defects such as plating voids occur in minute areas of the object's plating target surface (for example, via holes and trenches with a high aspect ratio of 20 or more), the desired plating process can be performed.
在本發明之鍍覆裝置中，係使鍍槽的槽內空間減壓到-95至-100kPa(大氣壓0，計示壓力(gauge pressure))，但若只是單純地進行減壓，則在減壓時會產生使供給到鍍槽之液體(例如鍍液、清洗水及前處理液等液體)往減壓用管的方向被抽吸之力。在有液體被抽吸到減壓用管中的狀態時，就難以確實地使鍍槽的槽內空間減壓。因此，為了確實地進行鍍槽的槽內空間的減壓控制，本發明之鍍覆裝置中，進行減壓作業時，係使鍍槽轉動，在使載置於鍍槽的開口部之被鍍物成為傾斜的狀態下進行。被鍍物最初係以鍍覆對象面朝下而水平地載置於鍍槽的開口部，但在減壓之際，係使鍍槽轉動而成為使被鍍物的鍍覆對象面朝上，其轉動角度設為100°至170°。如此使鍍槽轉動時，鍍槽(被鍍物及鍍覆對象面也一樣)係成為傾斜的狀態，且本發明之鍍覆裝置係於以位於該傾斜姿勢的上側之方式形成的鍍槽內壁設有減壓用凹穴。而且，減壓用管係從減壓用凹穴往鍍槽中央方向延伸設置。亦即，在成為傾斜姿勢之際，會使減壓用凹穴在上側，而使減壓用管成為從減壓用凹穴的排氣口朝下方配置之狀態。
In the plating device of the present invention, the pressure of the space inside the plating tank is reduced to -95 to -100 kPa (
本發明之鍍覆裝置係如下述進行減壓操作。首先，將被鍍物載置於開口部，然後使鍍槽轉動到預定的轉動角度。而且，在將鍍液等液體供給到鍍槽之前，使槽內空間減壓到預定的壓力(-95至-100kPa)。於此之際，也會使藉由被鍍物背面按壓蓋而在被鍍物背面之側形成的背面空間減壓(-95至-100kPa)。然後，在減壓的狀態下將液體供給到鍍槽內。進行此液體之供給直到被抽吸到減壓用管內。供給停止後，係在使減壓用管內回到大氣壓之後，藉由與減壓用管連接的排液用管將殘留於減壓用管內之液體排出。本發明之鍍覆裝置中，在使鍍槽轉動而成為傾斜姿勢之際，減 壓用管係從減壓用凹穴的排氣口往鍍槽中央方向延伸設置，因此減壓用管會成為從排氣口朝下配置。因此，供給到鍍槽的液體會成為在鍍槽內供給到減壓用凹穴的排氣口的前方為止之狀態，可防止液體因為減壓而被抽吸到減壓用管內，所以可確實地使鍍槽的槽內空間減壓到預定的壓力(-95至-100kPa)。 The plating device of the present invention performs a pressure reducing operation as follows. First, the object to be plated is placed in the opening, and then the plating tank is rotated to a predetermined rotation angle. Furthermore, before supplying liquid such as a plating solution to the plating tank, the space inside the tank is depressurized to a predetermined pressure (-95 to -100 kPa). At this time, the back space formed on the back side of the object to be plated by pressing the cover on the back surface of the object to be plated is also depressurized (-95 to -100 kPa). Then, the liquid is supplied into the plating tank under reduced pressure. The liquid is supplied until it is sucked into the pressure reducing tube. After the supply is stopped, the pressure inside the pressure reducing pipe is returned to atmospheric pressure, and then the liquid remaining in the pressure reducing pipe is discharged through the drain pipe connected to the pressure reducing pipe. In the plating device of the present invention, when the plating tank is rotated into an inclined posture, the The pressure pipe system extends from the exhaust port of the pressure reducing cavity toward the center of the plating tank, so the pressure reducing pipe is arranged downward from the exhaust port. Therefore, the liquid supplied to the plating tank will be in a state in the plating tank until it is supplied in front of the exhaust port of the pressure reduction cavity, and the liquid can be prevented from being sucked into the pressure reduction pipe due to pressure reduction, so it can Reliably depressurize the space inside the plating tank to a predetermined pressure (-95 to -100 kPa).
本發明之鍍覆裝置以將槽內空間容量係被調整為使鍍槽的供給量成為從被鍍物的鍍覆對象面算起有2.0mm至10.0mm的液厚較佳。本發明之鍍覆裝置中，為了確實地實現鍍槽的槽內空間的減壓，係以對於鍍槽的槽內空間容量進行調整較佳。當槽內空間容量太大，則要耗費長時間進行減壓到預定壓力之減壓操作，作業效率會變差。當槽內空間容量太小，就會有不能做到良好的鍍覆處理之傾向。本發明之鍍覆裝置中，係以從被鍍物的鍍覆對象面算起的液厚來界定鍍槽的槽內空間容量，就具體的容量而言，在被鍍物為6吋的矽製晶圓的情況，為約32mL至153mL，在8吋的情況，為約57mL至284mL，在12吋的情況，為約132mL至660mL，這些都可說是較佳的槽內空間容量。 The plating device of the present invention is preferably such that the space capacity in the tank is adjusted so that the supply volume of the plating tank has a liquid thickness of 2.0 mm to 10.0 mm from the plating target surface of the object to be plated. In the plating device of the present invention, in order to reliably depressurize the space inside the plating tank, it is preferable to adjust the space capacity inside the plating tank. When the space capacity in the tank is too large, it will take a long time to reduce the pressure to the predetermined pressure, and the operating efficiency will deteriorate. When the space capacity in the tank is too small, there will be a tendency that good plating processing cannot be achieved. In the plating device of the present invention, the space capacity in the plating tank is defined by the liquid thickness calculated from the plating surface of the object to be plated. As for the specific capacity, when the object to be plated is 6 inches of silicon In the case of wafer manufacturing, it is about 32mL to 153mL, in the case of 8 inches, it is about 57mL to 284mL, and in the case of 12 inches, it is about 132mL to 660mL. These can be said to be better space capacities in the tank.
在實現本發明之鍍覆裝置時，鍍槽的開口部較佳為使形成密封件之密封構件及形成鍍槽之鍍槽構件相固著而成型者。本發明之鍍覆裝置中，為了使由載置於開口部的被鍍物的鍍覆對象面及鍍槽所形成的槽內空間減壓，必須使液體洩漏不會發生在載置於開口部的被鍍物與開口部的密封件的接觸部分。為了使槽內空間減壓到-95至-100kPa，確實地防止液體從設於開口部的密封件洩漏很重要。因此，開口部必須由形成密封件之密封構件及形成鍍槽之鍍槽構件相固著。所謂的固著，係指密封構件與鍍 槽構件成為液密地相接的狀態。採用形成密封件之密封構件及形成鍍槽之鍍槽構件為相固著的狀態的鍍槽的開口部時，可藉由使用同時澆鑄進行成型來實現。該同時澆鑄係指將鍍槽構件及密封構件投入至用來形成開口部之模箱，並對模箱進行加壓而使開口部成型之澆鑄方法。具體而言，係對預先投入至模箱的鍍槽構件的開口部的相當於密封件部分之位置(開口部的周緣部分)塗佈接著劑(primer，底層接著劑)，再將密封構件投入至塗佈有接著劑的密封件部分，然後對模箱進行加壓。在密封構件硬化後，當將模箱拆除而使開口部成型時，就會使形成密封件之密封構件及形成鍍槽之鍍槽構件成為相固著的狀態。若是形成為如此的固著狀態之開口部，就可確實地防止隨著鍍槽內的減壓而發生的鍍液在密封件的液體洩漏。鍍槽構件及密封構件的材質並沒有特別的限制，但若考慮加工性及耐鍍液性，以採用聚氯乙烯(PVC)作為鍍槽構件，採用矽膠(silicone)作為密封構件較佳。另外，可在相當於密封件部分的位置(開口部的周緣部分)使要與被鍍物接觸的陰極(cathode)同時成型。 When realizing the plating apparatus of the present invention, it is preferable that the opening of the plating tank is formed by fixing the sealing member forming the seal and the plating tank member forming the plating tank. In the plating apparatus of the present invention, in order to depressurize the space in the tank formed by the plating target surface of the object to be plated placed in the opening and the plating bath, it is necessary to prevent liquid leakage from occurring in the plating tank placed in the opening. The contact part between the plated object and the seal of the opening. In order to depressurize the space inside the tank to -95 to -100 kPa, it is important to reliably prevent liquid from leaking from the seal provided in the opening. Therefore, the opening must be fixed by the sealing member forming the seal and the plating bath member forming the plating bath. The so-called fixation refers to the sealing component and the plating The groove members are in liquid-tight contact with each other. When the sealing member forming the seal and the plating bath member forming the plating bath are fixed to each other at the opening of the plating bath, this can be achieved by molding using simultaneous casting. This simultaneous casting is a casting method in which the plating tank member and the sealing member are put into a mold box for forming the opening, and the mold box is pressurized to form the opening. Specifically, a primer (primer adhesive) is applied to the position corresponding to the sealing portion (the peripheral portion of the opening) of the opening of the plating tank member that has been put into the mold box in advance, and then the sealing member is put in to the sealing part coated with adhesive, and then pressurize the mold box. After the sealing member is hardened, when the mold box is removed and the opening is formed, the sealing member forming the sealing member and the plating bath member forming the plating bath are fixed to each other. If the opening is formed in such a fixed state, it is possible to reliably prevent the leakage of the plating liquid from the seal due to the pressure reduction in the plating tank. There are no special restrictions on the materials of the plating tank components and sealing components. However, if processability and plating solution resistance are taken into consideration, it is better to use polyvinyl chloride (PVC) as the plating tank components and silicone as the sealing components. In addition, the cathode (cathode) that is to be in contact with the object to be plated can be molded simultaneously at a position corresponding to the sealing portion (peripheral portion of the opening).
本發明之鍍覆裝置以具備用來將要供給到鍍槽之液體中含有的溶存氧去除之脫氣手段較佳。要供給到鍍槽之液體(例如鍍液及清洗水及前處理液等)處於大氣中時，就會溶存有某程度的氧，因此，為了防止氣泡的發生，較理想為預先將液體中的溶存氧去除。脫氣手段雖然沒有特別的限制，但較理想為採用使用中空絲之脫氣模組。 The plating apparatus of the present invention is preferably equipped with a degassing means for removing dissolved oxygen contained in the liquid to be supplied to the plating tank. When the liquid to be supplied to the plating tank (such as plating solution, cleaning water, pre-treatment liquid, etc.) is in the atmosphere, oxygen will be dissolved to a certain extent. Therefore, in order to prevent the occurrence of bubbles, it is ideal to remove the oxygen in the liquid in advance. Dissolved oxygen removal. Although the degassing means is not particularly limited, it is ideal to use a degassing module using hollow fibers.
本發明之鍍覆裝置中，較佳為設有可將兩種以上的鍍液個別地儲存之複數個鍍液儲槽，且具備有用以切換要供給到鍍槽的鍍液之鍍液切換手段。本發明之鍍覆裝置雖為可在減壓的狀態下進行鍍覆處理者，但 當然也可在大氣壓的狀態下進行鍍覆處理。此外，只要在開口部的密封件中填充電極，在鍍槽內配置陽極，就可進行電解鍍覆處理。因此，可藉由變更要供給到鍍槽的鍍液的種類，而實施複數種鍍覆處理。此情況，當為了變更鍍液的種類而配備鍍液切換手段時，就可進行連續的複數種鍍覆處理。例如，對於如半導體晶圓之被鍍物進行鍍覆處理的情況，雖然有時係按照鎳、鈀、金的順序進行鍍覆處理，但還可藉由下列方式來應對：準備可個別地儲存鎳鍍液、鈀鍍液、金鍍液之三個鍍液儲槽，並以鍍液切換手段切換要供給到鍍槽的鍍液而進行鍍覆處理。此方式對於少量多樣的製品的鍍覆處理很有效，且可謀求鍍覆裝置的配置空間的省空間化。 The plating apparatus of the present invention is preferably provided with a plurality of plating liquid storage tanks capable of storing two or more plating liquids individually, and is preferably equipped with a plating liquid switching means for switching the plating liquid to be supplied to the plating tanks. . Although the plating device of the present invention can perform plating processing under reduced pressure, it Of course, plating can also be performed under atmospheric pressure. In addition, electrolytic plating can be performed by filling the seal in the opening with electrodes and placing the anode in the plating bath. Therefore, a plurality of types of plating treatments can be performed by changing the type of plating solution to be supplied to the plating tank. In this case, when a plating solution switching means is provided to change the type of plating solution, multiple types of plating processes can be performed continuously. For example, when plating a target object such as a semiconductor wafer, the plating process is sometimes performed in the order of nickel, palladium, and gold. However, the following method can also be used: Prepare and store them individually. There are three plating liquid storage tanks for nickel plating liquid, palladium plating liquid and gold plating liquid, and the plating liquid switching means is used to switch the plating liquid to be supplied to the plating tank for plating processing. This method is effective for plating a small amount of various products, and can save the installation space of the plating device.
本發明係關於一種減壓鍍覆處理方法，該減壓鍍覆處理方法具有下列步驟：將被鍍物載置於鍍槽的開口部，藉由被鍍物液密地封閉開口部，且從載置於開口部的被鍍物的背面側按壓被鍍物的周緣而予以固定；使鍍槽轉動而使載置於開口部的被鍍物的姿勢變化，且供給鍍液而以鍍液充滿於鍍槽內，藉此使鍍液與被鍍物接觸；使用槽內減壓手段的減壓用管使鍍槽的槽內空間減壓，同時使形成於未進行鍍覆處理之被鍍物的背面側的背面空間減壓；以及使鍍槽的槽內空間減壓到預定壓力後，將殘留於減壓用管內的鍍液從排液用管排出，然後進行鍍覆處理。 The present invention relates to a reduced pressure plating treatment method. The reduced pressure plating treatment method has the following steps: placing an object to be plated in an opening of a plating tank, sealing the opening liquid-tightly with the object to be plated, and from The back side of the object to be plated placed in the opening is pressed against the periphery of the object to be plated to fix it; the plating tank is rotated to change the posture of the object to be plated placed in the opening, and the plating solution is supplied and filled with the plating solution In the plating tank, the plating solution is brought into contact with the object to be plated; the decompression tube using the decompression means in the tank is used to depressurize the space in the plating tank, and at the same time, the plating solution formed on the object to be plated that has not been plated is The back space on the back side of the plating tank is depressurized; and after depressurizing the inner space of the plating tank to a predetermined pressure, the plating liquid remaining in the decompression pipe is discharged from the drain pipe, and then the plating process is performed.
本發明之減壓鍍覆處理方法以對要供給到鍍槽之液體預先進行脫氣處理較佳。 In the reduced pressure plating treatment method of the present invention, it is preferable to degas the liquid to be supplied to the plating tank in advance.
本發明之減壓鍍覆處理方法以切換要供給到鍍槽之鍍液而進行複數種鍍覆處理較佳。 In the reduced pressure plating treatment method of the present invention, it is preferable to perform a plurality of plating treatments by switching the plating solution supplied to the plating tank.
在本發明中，當然可不進行減壓而在大氣壓下進行鍍覆處理。因此，可依鍍液的種類而在大氣壓或低壓的狀態下進行鍍覆處理。在對被鍍物進行複數種鍍覆處理之情況，以切換要供給到鍍槽的鍍液而進行鍍覆處理較佳。 In the present invention, it is of course possible to perform plating treatment under atmospheric pressure without reducing pressure. Therefore, the plating process can be performed under atmospheric pressure or low pressure depending on the type of plating solution. When a plurality of plating treatments are performed on an object to be plated, it is preferable to perform the plating treatments by switching the plating liquid to be supplied to the plating tank.
另外，本發明之鍍覆裝置及減壓鍍覆處理方法可應用於電解鍍覆處理，也可應用於無電解鍍覆處理。 In addition, the plating device and the reduced pressure plating treatment method of the present invention can be applied to electrolytic plating treatment and can also be applied to electroless plating treatment.
根據本發明，可極力抑制氣泡等對於在被鍍物的鍍覆對象面形成的微小的通孔及溝槽的影響，而確實地進行鍍覆處理，且可用一台鍍覆裝置來對應複數種鍍覆處理。 According to the present invention, it is possible to reliably perform plating processing by minimizing the influence of bubbles and the like on minute through holes and grooves formed on the surface of the object to be plated, and one plating device can be used to cope with multiple types of plating. Plating treatment.
1:鍍覆單元 1: Plating unit
2:壓蓋 2: Capping
3:翻轉驅動機構 3: Flip drive mechanism
4:壓臂 4: Pressure arm
10:鍍覆單元本體 10: Plating unit body
11:開口部 11:Opening part
12:排氣口 12:Exhaust port
13:減壓用凹穴 13: Pocket for pressure relief
14:供液口 14:Liquid supply port
15:排出口 15: Discharge outlet
16:減壓用管 16: Pressure reducing pipe
17:排液用管 17: Drainage tube
20:壓蓋本體 20: Gland body
21:背面減壓機構 21:Back pressure reducing mechanism
22:減壓手段 22: Stress reduction means
23:減壓用溝 23: Ditch for pressure relief
50:排放承接部 50: Emissions Undertaking Department
51:排液槽 51: Drainage tank
60,60’,60”:供液單元 60, 60’, 60”: Liquid supply unit
61:儲液槽 61:Liquid storage tank
62:脫氣處理槽 62: Degassing treatment tank
63:脫氣模組 63: Degassing module
圖1係本實施型態之鍍覆裝置的斜視圖。 Fig. 1 is a perspective view of the plating device of this embodiment.
圖1A係本實施型態之鍍覆裝置的右側視圖。 FIG. 1A is a right side view of the plating device of this embodiment.
圖1B係本實施型態之鍍覆裝置的左側視圖。 FIG. 1B is a left side view of the plating device of this embodiment.
圖1C係本實施型態之鍍覆裝置的前視圖。 FIG. 1C is a front view of the plating device of this embodiment.
圖1D係本實施型態之鍍覆裝置的俯視圖。 FIG. 1D is a top view of the plating device of this embodiment.
圖2係鍍覆裝置的鍍覆單元本體的斜視圖。 Figure 2 is a perspective view of the plating unit body of the plating device.
圖2A係鍍覆裝置的鍍覆單元本體的俯視圖。 FIG. 2A is a top view of the plating unit body of the plating device.
圖2B係鍍覆裝置的鍍覆單元本體的仰視圖。 FIG. 2B is a bottom view of the plating unit body of the plating device.
圖3係鍍覆裝置的壓蓋本體的斜視圖。 Figure 3 is a perspective view of the gland body of the plating device.
圖3A係鍍覆裝置的壓蓋本體的俯視圖。 Figure 3A is a top view of the gland body of the plating device.
圖3B係鍍覆裝置的壓蓋本體的仰視圖。 Figure 3B is a bottom view of the gland body of the plating device.
圖4係鍍覆處理時的鍍覆裝置的斜視圖。 Fig. 4 is a perspective view of the plating device during plating processing.
圖5係排液時的鍍覆裝置的斜視圖。 Figure 5 is a perspective view of the plating device during liquid discharge.
圖6係本實施型態之鍍覆裝置的配管概略圖。 Fig. 6 is a schematic diagram of the piping of the plating device according to this embodiment.
圖7係鍍覆的通孔剖面之觀察照片(減壓)。 Figure 7 is an observation photograph (decompressed) of a plated through-hole cross-section.
圖8係鍍覆的通孔剖面之觀察照片(大氣壓)。 Figure 8 is an observation photograph of the plated through-hole cross-section (atmospheric pressure).
參照圖式來說明本發明的實施型態。圖1顯示本實施型態之鍍覆裝置的斜視圖。此外，圖1A顯示鍍覆裝置的右側視圖，圖1B顯示左側視圖，圖1C顯示前視圖，圖1D顯示俯視圖。 Embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows a perspective view of the plating device of this embodiment. In addition, FIG. 1A shows a right side view of the plating device, FIG. 1B shows a left side view, FIG. 1C shows a front view, and FIG. 1D shows a top view.
本實施型態之鍍覆裝置係具有鍍覆單元1及壓蓋2。在鍍覆單元1設有翻轉驅動機構3。此外，在壓蓋2設有壓臂4，壓臂4係用來進行將壓蓋2載置於鍍覆單元1及使壓蓋2從鍍覆單元1脫離之操作。
The plating device of this embodiment has a
圖2顯示鍍覆單元本體的斜視圖。此外，圖2A顯示鍍覆裝置的鍍覆單元本體的俯視圖，圖2B顯示鍍覆單元本體的仰視圖。而且，圖3顯示壓蓋2本體的斜視圖。另外，圖1中顯示的壓蓋2，係將壓克力製的蓋(cover)安裝在圖3的壓蓋本體之後的狀態的圖示。此外，圖3A顯示圖3的壓蓋本體的俯視圖，圖3B顯示壓蓋本體的仰視圖。
Figure 2 shows a perspective view of the plating unit body. In addition, FIG. 2A shows a top view of the plating unit body of the plating device, and FIG. 2B shows a bottom view of the plating unit body. Furthermore, FIG. 3 shows a perspective view of the body of the
圖2顯示的鍍覆單元本體10係具有開口部11，且形成有減壓用凹穴13，減壓用凹穴13具有排氣口12，排氣口12係用來使由載置
於該開口部11的被鍍物的鍍覆對象面與鍍覆單元本體10所形成的單元內空間減壓。此外，還設置有用來將鍍液供給到鍍覆單元內之供液口14及用來將鍍液排出到單元外之排出口15。此外，在鍍覆單元內設置有陽極(未圖示)。而且，如圖2B所示，在鍍覆單元本體10的底部側，係設有連接到排氣口12之減壓用管16。此減壓用管16係從排氣口12往鍍覆單元本體10的中央方向延伸設置，且經由捕集槽(trap tank)(未圖示)而連結到真空泵(未圖示)。再者，排液用管17也連接到該減壓用管16所連接之排氣口12。
The
具備有該開口部11之鍍覆單元本體10係藉由同時澆鑄製法形成。具體而言，係對用來形成開口部之模箱預先塗佈接著劑(primer，底層接著劑)，並投入聚氯乙烯(鍍覆單元本體的構成材料)，在聚氯乙烯固化之後，將矽膠投入至開口部的相當於密封件部分之位置(開口部的周緣部分)之塗佈有接著劑的密封件部分，然後對模箱進行加壓。密封構件硬化後，將模箱拆除，使開口部的聚氯乙烯及形成密封件之矽膠成為相固著的狀態。另外，在此同時澆鑄製法之際，將陰極設置於密封件部分，形成為可將鍍覆電流供給到載置於開口部的被鍍物。
The
接著，針對圖3之壓蓋本體進行說明。如圖3A所示，在壓蓋本體20設有矽膠製的背面減壓機構21。此背面減壓機構21係由減壓手段22所連接的減壓用溝23所構成。對於載置於鍍覆單元本體10的開口部11之被鍍物，從被鍍物的背面側配置壓蓋2，當對被鍍物進行按壓時，就會使壓蓋本體20的背面減壓機構21緊貼於被鍍物的背面側。在此狀態下，將圖3B所示的減壓用溝23的空氣進行排氣而減壓，藉此使被鍍物的背面空間減壓。
Next, the gland body of FIG. 3 will be described. As shown in FIG. 3A , the
接下來，說明藉由本實施型態之鍍覆裝置進行鍍覆處理的步驟。首先，在圖1所示的狀態的鍍覆裝置，藉由壓臂4使鍍覆裝置的壓蓋2從鍍覆單元1脫離。在使鍍覆單元1的開口部11開放的狀態下，將被鍍物(例如半導體晶圓)載置於開口部11。在被鍍物載置於開口部11的狀態下，驅動壓臂4以壓蓋2從被鍍物的背面側按壓。
Next, the steps of plating processing using the plating device of this embodiment will be described. First, in the plating device in the state shown in FIG. 1 , the
然後，藉由翻轉驅動機構3使鍍覆單元1及壓蓋2一體地轉動，使其變更到圖4所示的姿勢，使被鍍物的鍍覆對象面朝向上方側。此時的轉動角度係從最初將被鍍物載置於開口部的狀態(亦即從被鍍物的鍍覆對象面朝下之水平位置)算起為100°至170°。在此圖4的狀態下，係在將鍍液等液體供給到鍍覆單元1內之前，藉由鍍覆單元本體10的排氣口12將鍍覆單元內減壓。此時的減壓係進行到-95至-100kPa。同時，藉由壓蓋本體20的背面減壓機構21，使被鍍物的背面側的背面空間減壓到-95至-100kPa。
Then, the
鍍覆單元1的減壓完成之後，將預先進行過脫氣處理的液體，亦即鍍液、用來提高鍍覆對象面的潤濕性之純水及稀硫酸溶液等前處理液、無電解鍍覆處理用的催化溶液等液體供給到鍍覆單元1。此處，以供給預先進行過脫氣處理的稀硫酸之前處理液的情況為例進行說明。進行前處理液的供給直到前處理液被抽吸到減壓用管16內。供給預定量之後，將設於捕集槽與真空泵之間的減壓閥(未圖示)關閉，將與捕集槽連接的大氣解放閥(未圖示)打開，使減壓用管16內回到大氣壓，藉由排液用管17將殘留於減壓用管16內的前處理液排出。
After the decompression of the
將減壓用管內的前處理液排出之後，將與捕集槽連接的大氣解放閥關閉，將位在捕集槽與真空泵之間的減壓閥打開，再次進行減壓到-95至-100kPa。減壓完成之後，進行預定時間的被鍍物的鍍覆對象面的前處理。前處理後，藉由翻轉驅動機構3使鍍覆單元1及壓蓋2一體地轉動，使其姿勢變更到如圖5所示的垂直狀態。而且，使鍍覆單元內呈大氣開放，將前處理液從位於鍍覆單元的下側之排出口15排出。藉此，完成稀硫酸溶液之前處理。
After draining the pretreatment liquid from the pressure reduction pipe, close the atmospheric release valve connected to the collection tank, open the pressure reducing valve between the collection tank and the vacuum pump, and reduce the pressure again to -95 to - 100kPa. After the pressure reduction is completed, the plating target surface of the object to be plated is pre-processed for a predetermined period of time. After the preprocessing, the
前處理完成後，使鍍覆裝置回到圖4所示的姿勢，供給預定的鍍液。關於減壓處理及鍍液的供給，係與前述的前處理液的情況一樣地進行。在保持著-95至-100kPa的減壓狀態之狀態下進行鍍覆處理。若為電解鍍覆，則供給預定的電解電流。若為無電解鍍覆處理，則是放置預定時間。在此鍍覆處理之際，可視需要而調整鍍覆裝置的轉動角度，以進行鍍覆處理，所以可一邊將鍍覆中產生的氣泡有效率地從鍍覆對象面去除一邊進行鍍覆處理。鍍覆處理後，與上述的前處理液一樣，進行鍍液的排出。視情況，供給清洗液而進行鍍覆對象面的洗淨處理。另外，在使鍍覆單元內減壓之情況，係在減壓裝置(例如真空泵)與鍍覆單元之間設置捕集槽(未圖示)，以使鍍液及前處理液不會直接被抽吸到減壓裝置。 After the pretreatment is completed, the plating device is returned to the posture shown in Figure 4 and the predetermined plating solution is supplied. The pressure reduction treatment and the supply of the plating solution are performed in the same manner as in the case of the aforementioned pretreatment solution. The plating process is performed while maintaining a reduced pressure of -95 to -100kPa. In the case of electrolytic plating, a predetermined electrolytic current is supplied. In the case of electroless plating, it is left for a predetermined time. During this plating process, the rotation angle of the plating device can be adjusted as necessary to perform the plating process. Therefore, the plating process can be performed while efficiently removing bubbles generated during plating from the surface to be plated. After the plating treatment, the plating liquid is discharged in the same manner as the above-mentioned pretreatment liquid. Depending on the situation, a cleaning solution is supplied to clean the surface to be plated. In addition, when depressurizing the plating unit, a trap tank (not shown) is installed between the decompression device (such as a vacuum pump) and the plating unit so that the plating liquid and pretreatment liquid are not directly Aspirate to pressure reducing device.
圖6顯示本實施型態之鍍覆裝置的配管概略圖。此圖6中，係將鍍覆單元1及壓蓋2等簡化顯示。從鍍覆單元1的排出口15排出的液體、從排液用管17排出的減壓用管內的液體係洩放到排放承接部50，且投入至排液槽51。鍍液及前處理液等液體係藉由供液單元60而供給到鍍覆單元1。供液單元60係藉由儲液槽61及脫氣處理槽62及脫氣模組63
所構成。用以進行所要進行的處理所需的液體(亦即鍍液及前處理液、清洗水等)係先供給到儲液槽61。儲液槽61的液體預先在脫氣處理槽62中將溶存氧去除。經脫氣處理槽62予以脫氣過的液體係通過使用中空絲之脫氣模組63，藉此進一步將溶存氧去除，並供給到鍍覆單元1。如此的供液單元係依各種鍍液之各者設置而設置有複數個供液單元60,60’,61”，且使用鍍液切換手段(未圖示)變更要供給的鍍液，藉此，可藉由一台本實施型態之鍍覆裝置進行複數種鍍覆處理。
FIG. 6 shows a schematic diagram of the piping of the plating device according to this embodiment. In this figure, the
本實施型態之鍍覆裝置為對於作為被鍍物之半導體晶圓進行鍍覆處理之類型。該半導體晶圓的材質並沒有特別的限制，可使用Si、SiC、GaAs、GaN、InP等。此外，藉由變更鍍覆單元的開口部的形狀，也可應用於電子基板之類的矩形板狀的被鍍物。 The plating apparatus of this embodiment is a type that performs a plating process on a semiconductor wafer that is a target object to be plated. The material of the semiconductor wafer is not particularly limited, and Si, SiC, GaAs, GaN, InP, etc. can be used. In addition, by changing the shape of the opening of the plating unit, it can also be applied to rectangular plate-shaped objects to be plated such as electronic substrates.
本實施型態之鍍覆裝置可應用於電解鍍覆處理，也可應用於無電解鍍覆處理。電解鍍覆處理的情況，係藉由在鍍覆單元的開口部的密封件之處配置電極，並將鍍覆電流供給到被鍍物的鍍覆對象面而進行。此外，鍍液以使用進行過脫氣處理者較佳。而且，就前處理液而言，可使用純水及稀硫酸溶液等各種前處理液，例如使用與所使用的鍍液配合之前處理液，且較佳為使用進行過脫氣處理的前處理液。 The plating device of this embodiment can be applied to electrolytic plating processing or electroless plating processing. In the case of electrolytic plating, an electrode is arranged at the sealing member of the opening of the plating unit and a plating current is supplied to the plating target surface of the object to be plated. In addition, it is better to use a plating solution that has been degassed. Moreover, as the pretreatment liquid, various pretreatment liquids such as pure water and dilute sulfuric acid solution can be used. For example, a pretreatment liquid that is combined with the plating solution used, and a pretreatment liquid that has been degassed is preferably used. .
在本實施型態之鍍覆裝置中，鍍覆單元內的減壓、被鍍物的背面空間的減壓較佳為以-95kPa至-100kPa進行。另外，本實施型態之鍍覆裝置中，也可配合鍍液的種類而在大氣壓或低壓的狀態下進行鍍覆處理。 In the plating apparatus of this embodiment, the pressure reduction in the plating unit and the pressure reduction in the space behind the object to be plated are preferably performed at -95 kPa to -100 kPa. In addition, in the plating apparatus of this embodiment, the plating process can also be performed under atmospheric pressure or low pressure according to the type of plating solution.
以下，說明藉由本實施型態之鍍覆裝置，使用硫酸銅鍍液進行銅的填充鍍覆處理的結果。 Hereinafter, the results of copper fill plating using a copper sulfate plating solution using the plating apparatus of this embodiment will be described.
使用8吋的矽製晶圓作為被鍍物。在該晶圓的鍍覆對象面設有複數個直徑20μm，深度200μm的通孔。硫酸銅鍍液採用市售的MICROFAB Cu525(EEJA股份有限公司製)。此外，前處理液使用進行過脫氣處理的純水。 An 8-inch silicon wafer is used as the object to be plated. A plurality of through holes with a diameter of 20 μm and a depth of 200 μm are provided on the plating target surface of the wafer. Commercially available MICROFAB Cu525 (manufactured by EEJA Co., Ltd.) was used as the copper sulfate plating solution. In addition, degassed pure water is used as the pretreatment liquid.
此銅的填充鍍覆處理，係將電流密度設定為0.5A/dm2而在通孔內形成目標厚度8μm的鍍銅，且在使用純水之前處理時進行減壓，在大氣壓的狀態下進行鍍銅。為了比較，也進行了在使用純水之前處理時不減壓(大氣壓)，但一樣是在大氣壓的狀態下進行之鍍銅。在前處理時進行減壓之情況，鍍覆單元內及被鍍物的背面空間係減壓到-95kPa。 This copper fill plating treatment was performed by setting the current density to 0.5 A/dm 2 to form copper plating with a target thickness of 8 μm in the through hole, and reducing the pressure during the pretreatment using pure water, and performing it under atmospheric pressure. Copper plated. For comparison, copper plating was also performed under atmospheric pressure without reducing the pressure (atmospheric pressure) before using pure water. When the pressure is reduced during pre-treatment, the pressure in the plating unit and the space behind the object to be plated is reduced to -95kPa.
藉由前處理時有無減壓進行銅的填充鍍覆處理，觀察鍍覆後的通孔剖面。圖7及圖8顯示鍍覆後的通孔剖面照片。圖7係在前處理時有減壓之情況，圖8係無減壓(大氣壓)而進行鍍覆前處理之情況。另外，此圖7及圖8係在倍率50倍的觀察照片之下顯示倍率100倍、200倍之放大照片。如同觀看此觀察照片可得知，在有減壓而進行鍍覆前處理之情況，可確認到銅鍍覆進行到通孔的底部(通孔內看起來呈白色的部分)。相對於此，在前處理時無減壓(大氣壓)之情況，可確認到鍍覆處理並未進行到通孔的底部(通孔內看起來呈黑色之處)。 The copper fill plating process was performed with or without pressure reduction during pre-processing, and the cross-section of the through hole after plating was observed. Figures 7 and 8 show cross-sectional photos of the through holes after plating. Figure 7 shows the case where pressure is reduced during pre-treatment, and Figure 8 shows the case where plating pre-treatment is performed without pressure reduction (atmospheric pressure). In addition, Figures 7 and 8 show magnified photos at 100x and 200x under the observation photos at 50x magnification. As can be seen from this observation photograph, when pre-plating treatment is performed under reduced pressure, it can be confirmed that copper plating proceeds to the bottom of the through hole (the portion inside the through hole that appears white). On the other hand, there was no pressure reduction (atmospheric pressure) during the preprocessing, and it was confirmed that the plating process did not proceed to the bottom of the through hole (the part inside the through hole that looks black).
1:鍍覆單元 1: Plating unit
2:壓蓋 2: Capping
3:翻轉驅動機構 3: Flip drive mechanism
4:壓臂 4: Pressure arm
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| PCT/JP2022/019503 WO2023214449A1 (en) | 2022-05-02 | 2022-05-02 | Plating device for reduced-pressure plating treatment and reduced-pressure plating treatment method |
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| TWI624567B (en) * | 2012-12-11 | 2018-05-21 | 諾發系統有限公司 | Electrofill vacuum plating cell |
| KR101621813B1 (en) * | 2014-09-26 | 2016-05-17 | 주식회사 티케이씨 | Apparatus For Plating Having Function For Draining Bubble On The Surface Of Work |
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