TW202337052A - Crystal wafer and method for manufacturing crystal oscillator capable of preventing concave-and-convex for the crystal wafer and reducing cracks during handling and transportation - Google Patents

Abstract

The present invention provides a crystal wafer and a method for manufacturing a crystal oscillator. The crystal wafer can reduce cracks during handling and transportation and can improve productivity. The crystal wafer (10) includes a twinned region (21) in part or all of the peripheral portion (20). The twinned region is a region of at least 2 mm from the outer circumference of the crystal wafer to the center, and more than 80% of the region is twinned. The crystal wafer including the twinned region is formed with an etching-resistant mask (13) formed in a matrix for forming the outlines of a plurality of crystal oscillators, and the crystal wafer is immersed in an etching liquid mainly composed of hydrofluoric acid to form the outlines.

Description

晶體晶圓以及晶體振子的製造方法Crystal wafer and crystal oscillator manufacturing method

本發明是有關於一種在操作（handling）及搬送時難以產生破裂的晶體晶圓以及晶體振子的製造方法。The present invention relates to a crystal wafer that is difficult to crack during handling and transportation, and a method for manufacturing a crystal oscillator.

近年來，隨著電子機器的小型化及通訊頻率的高頻化，對於晶體振子也要求小型且薄，利用機械加工式的製造方法難以製造晶體振子。因此，使用下述方法：藉由微影（photolithography）技術及濕式蝕刻（wet etching）技術，在晶體晶圓將多個晶體振子形成為矩陣（matrix）狀，從晶體晶圓折取各晶體振子而進行單片化。因而，在微影步驟或單片化步驟中，要屢屢進行晶體晶圓的操作或搬送。In recent years, as electronic equipment has been miniaturized and communication frequencies have increased, crystal oscillators have also been required to be small and thin, and it has been difficult to manufacture crystal oscillators using machining manufacturing methods. Therefore, the following method is used: using photolithography technology and wet etching technology, multiple crystal oscillators are formed into a matrix on a crystal wafer, and each crystal is folded from the crystal wafer The vibrator is monolithic. Therefore, in the lithography step or the singulation step, the crystal wafer must be frequently handled or transported.

在濕式蝕刻步驟中，典型的是使用以氫氟酸為主的蝕刻液。而且，專利文獻1中公開了：相對於AT切割（振動區域），成為雙晶的BT切割（非振動區域）的蝕刻速度為2/7左右（專利文獻1的、解決問題的技術手段等）。 [現有技術文獻] [專利文獻] In the wet etching step, an etching solution based on hydrofluoric acid is typically used. Furthermore, Patent Document 1 discloses that the etching rate of twin-crystal BT cutting (non-vibrating region) is about 2/7 compared to AT cutting (vibrating region) (Patent Document 1, technical means to solve the problem, etc.) . [Prior art documents] [Patent Document]

專利文獻1：日本專利特開2003-69374Patent Document 1: Japanese Patent Publication No. 2003-69374

[發明所要解決的問題] 但是，將晶體晶圓進行濕式蝕刻時，在不想要進行蝕刻加工的部位，具體而言，在晶體晶圓的外周部即外框部、或支撐晶體晶圓內的各晶體振子的杆等的部位，成膜Au等金屬膜或抗蝕劑膜（resist film），從而保護外框部或杆免受蝕刻液侵蝕。但是，在進行金屬膜或抗蝕劑膜的成膜時，必須利用夾具來保持晶體晶圓的例如外周部的一部分，因此所述部分無法附著金屬膜或抗蝕劑膜，因此無法利用金屬膜或抗蝕劑膜來保護。因此，會在晶體晶圓的外周部的一部分產生非意圖的蝕刻。因而，例如會產生以下參照圖16所說明的問題。 圖16的（A）是現有的晶體晶圓170的平面圖。而且，圖16的（B）是在現有的晶體晶圓170中產生破裂190的一例的平面圖。 在現有的晶體晶圓170中，如圖16的（A）那樣，在濕式蝕刻步驟時，有時晶體晶圓170的外周部被蝕刻成非意圖的狀態，產生凹凸180。所述凹凸180會因在晶體晶圓的操作及搬送時對晶體晶圓所施加的力，而產生如圖16的（B）圖那樣的破裂190。 [Problem to be Solved by the Invention] However, when a crystal wafer is subjected to wet etching, etching may occur in areas where etching is not intended, specifically, the outer peripheral portion of the crystal wafer, that is, the outer frame portion, or the supporting crystal wafer. A metal film such as Au or a resist film is formed on the rods and other parts of each crystal oscillator to protect the outer frame or rods from erosion by the etching liquid. However, when forming a metal film or a resist film, a jig must be used to hold, for example, a part of the outer peripheral portion of the crystal wafer. Therefore, the metal film or resist film cannot be attached to the portion, and therefore the metal film cannot be used. or resist film for protection. Therefore, unintentional etching may occur on a part of the outer peripheral portion of the crystal wafer. Therefore, for example, the problem described below with reference to FIG. 16 may occur. FIG. 16(A) is a plan view of a conventional crystal wafer 170 . Moreover, FIG. 16(B) is a plan view of an example in which cracks 190 occur in the conventional crystal wafer 170 . In the conventional crystal wafer 170 , as shown in FIG. 16(A) , during the wet etching step, the outer peripheral portion of the crystal wafer 170 may be etched into an unintentional state, causing unevenness 180 . The unevenness 180 may cause cracks 190 as shown in (B) of FIG. 16 due to the force exerted on the crystal wafer during operation and transportation of the crystal wafer.

本發明是鑒於所述問題而完成的，因而本申請的目的在於提供一種具有新穎結構的晶體晶圓以及晶體振子的製造方法，在用於以矩陣狀形成多個晶體振子的晶體晶圓中，能夠防止在外周部產生凹凸，由此能夠減輕操作及搬送時所產生的破裂。 [解決問題的技術手段] The present invention was completed in view of the above problems, and therefore the object of the present application is to provide a crystal wafer having a novel structure and a method for manufacturing a crystal oscillator. In the crystal wafer for forming a plurality of crystal oscillators in a matrix, It is possible to prevent unevenness in the outer peripheral portion, thereby reducing cracking during handling and transportation. [Technical means to solve problems]

為了謀求達成所述目的，根據本申請的晶體晶圓的發明，一種晶體晶圓，用於以矩陣狀形成多個晶體振子，所述晶體晶圓的特徵在於，在晶體晶圓的外周部的一部分或全部包括雙晶化區域。In order to achieve the above object, according to the crystal wafer invention of the present application, a crystal wafer is used to form a plurality of crystal oscillators in a matrix, and the crystal wafer is characterized in that at the outer periphery of the crystal wafer, Part or all of it includes a twinned region.

而且，根據作為本申請的另一發明的晶體振子的製造方法，一種晶體振子的製造方法，是使用微影技術及以氫氟酸為主的蝕刻液，在晶體晶圓以矩陣狀形成多個晶體振子的外形，所述晶體振子的製造方法的特徵在於包括下述步驟：在所述晶體晶圓的至少外周部的一部分或全部形成雙晶化區域的步驟；以及將形成有所述雙晶化區域的晶體晶圓浸漬於所述蝕刻液中而形成所述外形的步驟。 此處，在所述的各發明中，所謂雙晶化區域，是指有其他結晶進入第一結晶中的區域、即所謂的滲入雙晶的區域。即，在晶體晶圓使用右旋晶體的情況下，雙晶化區域是左旋晶體的區域，反之，在晶體晶圓使用左旋晶體的情況下，雙晶化區域是右旋晶體的區域。若進一步利用具體例來進行說明，則在晶體晶圓為AT切割的晶體晶圓的情況下，雙晶化區域是成為接近相當於BT切割的切割區域的區域。 [發明的效果] Furthermore, according to a method of manufacturing a crystal oscillator as another invention of the present application, a method of manufacturing a crystal oscillator uses photolithography technology and an etching liquid mainly containing hydrofluoric acid to form a plurality of crystal oscillators in a matrix on a crystal wafer. The appearance of the crystal oscillator. The manufacturing method of the crystal oscillator is characterized by including the following steps: forming a twinned region in at least part or all of the outer peripheral portion of the crystal wafer; and forming the twinned crystal. The step of immersing the crystal wafer in the etching area into the etching liquid to form the outer shape. Here, in each of the above-described inventions, the twinned region refers to a region where other crystals are incorporated into the first crystal, that is, a so-called twinned region. That is, when the crystal wafer uses a right-handed crystal, the twinned region is a region of a left-handed crystal. Conversely, when the crystal wafer uses a left-handed crystal, the twinned region is a region of a right-handed crystal. To further describe using a specific example, when the crystal wafer is an AT-cut crystal wafer, the twinned region is a region close to a cutting region equivalent to BT cutting. [Effects of the invention]

根據本發明的晶體晶圓，在晶體晶圓的外周部包括雙晶化區域，因此能夠防止（減少）在濕式蝕刻步驟時外周部從與晶體晶圓的主面垂直的方向被蝕刻成非意圖的狀態，因此能夠減輕在晶體晶圓的外周部產生凹凸的現象。因而，能夠減輕晶體晶圓的操作及搬送時所產生的破裂，因此能夠提升生產性，例如減少製造晶體振子時的破損不良等。而且，在不想要進行蝕刻的部位成膜金屬膜或抗蝕劑膜時，即便因固定夾具的影響而在所述外周部產生無法保護的區域，只要在所述外周部設置所述雙晶化區域，則也能夠防止或減輕被蝕刻成非意圖的狀態的現象。因此，能夠提升生產性，例如減少製造晶體振子時的破損不良等，並且不需要考慮固定夾具所造成的影響，因而能夠提升固定夾具的形狀的自由度。 而且，根據本發明的晶體振子的製造方法，在使用以氫氟酸為主的蝕刻液的步驟之前，在晶體晶圓的規定部分形成雙晶化區域，然後進行利用所述蝕刻液的加工，因此能夠防止在濕式蝕刻步驟時外周部被蝕刻成非意圖的狀態的現象。因而，能夠減輕晶體晶圓的操作及搬送時所產生的破裂，因此能夠高生產性地製造晶體振子。 According to the crystal wafer of the present invention, the outer peripheral portion of the crystal wafer includes a dual crystallization region. Therefore, it is possible to prevent (reduce) the outer peripheral portion from being etched in a direction perpendicular to the main surface of the crystal wafer in a wet etching step. Therefore, the occurrence of unevenness on the outer peripheral portion of the crystal wafer can be reduced. Therefore, cracks that occur during handling and transportation of the crystal wafer can be reduced, thereby improving productivity, for example, reducing breakage defects when manufacturing crystal oscillators. Furthermore, when a metal film or a resist film is formed on a portion where etching is not desired, even if an area that cannot be protected is produced in the outer peripheral portion due to the influence of the fixing jig, the twining can be provided in the outer peripheral portion. area, it can also prevent or reduce the phenomenon of being etched into an unintended state. Therefore, productivity can be improved, for example, breakage defects during manufacturing of the crystal oscillator can be reduced, and the influence of the fixing jig does not need to be considered, thereby increasing the degree of freedom in the shape of the fixing jig. Furthermore, according to the method of manufacturing a crystal oscillator of the present invention, before the step of using an etching liquid mainly containing hydrofluoric acid, a twinned region is formed in a predetermined portion of the crystal wafer, and then processing using the etching liquid is performed. Therefore, it is possible to prevent the outer peripheral portion from being etched into an unintended state during the wet etching step. Therefore, cracks that occur during handling and transportation of the crystal wafer can be reduced, so that the crystal oscillator can be manufactured with high productivity.

以下，參照圖式對本發明的晶體晶圓以及晶體振子的製造方法的實施方式分別進行說明。另外，用於說明的各圖僅概略地示出能夠理解這些發明的程度。而且，在用於說明的各圖中，對於相同結構成分標注相同編號進行表示，且有時省略說明。而且，以下說明中所述的形狀、材質等僅為本發明的範圍內的較佳例。因而，本發明不僅限定於以下實施方式。Hereinafter, embodiments of the crystal wafer and crystal oscillator manufacturing method of the present invention will be described with reference to the drawings. In addition, each drawing used for description is only schematically shown to the extent that these inventions can be understood. In addition, in each drawing used for explanation, the same structural components are represented by the same numbers, and descriptions may be omitted. In addition, the shapes, materials, etc. described in the following description are only preferred examples within the scope of the present invention. Therefore, the present invention is not limited to the following embodiments.

1.晶體晶圓的結構 圖1是第一實施方式的晶體晶圓10的平面圖。另外，圖1中的P是表示晶體晶圓10的放大部分的符號。在本實施方式的情況下，晶體晶圓10的平面形狀為圓形，從晶體原石的切斷（切割）的種類為AT切割。但是，平面形狀不限於圓形，也可為方形，而且，切斷切割不限於AT切割，也可為其他切割，例如為Z切割或應力補償（Stress Compensated，SC）切割等雙旋轉切割等。 第一實施方式的晶體晶圓10包括不為晶體振子的形成預定區域的框架（frame）形成預定區域20。框架形成預定區域20典型的是包含外框20a、以及連結各晶體振子的杆20b的區域。在本實施方式中，將外框20a稱作外周部。 圖1所示的示例是使外周部20a的整個區域為雙晶化區域21的示例。藉由將外周部20a進行雙晶化，即便進行以氫氟酸為主的濕式蝕刻，也能夠防止晶體晶圓10的外周部20a被蝕刻成非意圖的狀態的現象，從而能夠減輕在晶體晶圓10的外周部20a產生凹凸的程度。因此，能夠減輕晶體晶圓10的操作及搬送時所產生的破裂。 1. Structure of crystal wafer FIG. 1 is a plan view of the crystal wafer 10 according to the first embodiment. In addition, P in FIG. 1 is a symbol indicating an enlarged portion of the crystal wafer 10 . In the case of this embodiment, the planar shape of the crystal wafer 10 is circular, and the type of cutting (cutting) from the crystal rough stone is AT cutting. However, the planar shape is not limited to a circle and may also be a square, and the cutting cut is not limited to AT cutting, but may also be other cuts, such as Z cutting or double rotation cutting such as Stress Compensated (SC) cutting. The crystal wafer 10 of the first embodiment includes a frame formation predetermined region 20 that is not a frame formation predetermined region of the crystal oscillator. The planned frame formation area 20 is typically an area including the outer frame 20a and the rods 20b connecting the respective crystal oscillators. In this embodiment, the outer frame 20a is called an outer peripheral part. The example shown in FIG. 1 is an example in which the entire area of the outer peripheral portion 20 a is the twinned area 21 . By twin-crystallizing the outer peripheral portion 20a, it is possible to prevent the outer peripheral portion 20a of the crystal wafer 10 from being etched into an unintentional state even if wet etching using hydrofluoric acid is performed, thereby reducing the risk of the crystal wafer 10 being etched into an unintentional state. The outer peripheral portion 20 a of the wafer 10 is uneven to the extent that it is formed. Therefore, cracks caused during handling and transportation of the crystal wafer 10 can be reduced.

在將晶體晶圓10的外周部20a進行雙晶化時，理想的是如圖1所示，將晶體晶圓10的外周部全部進行雙晶化，但如圖2及圖3所示，外周部20a的整個區域的一部分未被雙晶化而產生非雙晶化區域30的情況也為本發明的形態。所述情況下，也可獲得減輕晶體晶圓的操作及搬送時所產生的破裂的效果。而且，在外周部20a中，在晶圓厚度方向的一部分產生非雙晶化區域30的情況下，也能夠同樣地獲得所述效果。而且，如圖4所示，在從晶體晶圓10的最外周部到中心的方向上產生非雙晶化區域30而外周部的雙晶化區域中斷的情況與未中斷的情況相比，有可能晶體晶圓的破損不良的可能性變高，但所述情況下，利用所述非雙晶化區域以外的部位所存在的雙晶化區域的效果，也能夠減少晶體晶圓破損的疑慮。When twining the outer peripheral portion 20a of the crystal wafer 10, it is ideal that the entire outer peripheral portion of the crystal wafer 10 is twinned as shown in Fig. 1. However, as shown in Figs. 2 and 3, the outer peripheral portion The case where part of the entire area of the portion 20a is not twinned and a non-twinned region 30 is generated is also an aspect of the present invention. In this case, the effect of reducing cracks generated during handling and transportation of the crystal wafer can be obtained. Furthermore, even in the case where the non-twinned region 30 is generated in a part of the outer peripheral portion 20 a in the wafer thickness direction, the same effect can be obtained. Furthermore, as shown in FIG. 4 , in the case where the non-twinned region 30 is generated in the direction from the outermost peripheral part to the center of the crystal wafer 10 and the twinned region in the outer peripheral part is interrupted, compared with the case where it is not interrupted, there are There may be a higher possibility of damage to the crystal wafer. However, in such a case, the risk of damage to the crystal wafer can be reduced by utilizing the effect of the twinned regions existing in locations other than the non-twinned regions.

而且，如圖5的（A）所示，在晶體晶圓10的外周部20a的相互分離的一部分區域20aa分別設置雙晶化區域21的情況也為本發明的形態。作為所述形態的具體例，例如在晶體晶圓成膜作為保護膜的金屬膜的情況或覆著抗蝕劑的情況下，為晶體晶圓的一部分由金屬膜成膜用的夾具或抗蝕劑覆著用的夾具予以保持，而未形成金屬膜或抗蝕劑的區域。在所述圖5的（A）的示例的情況下，僅使晶體晶圓的因未被保護膜覆蓋而產生非意圖的蝕刻的機率極高的區域為雙晶區域，因此與將外周部20a整個區域進行雙晶化的情況相比，能夠縮短雙晶化處理的時間。並且，能夠獲得本發明的效果。另外，圖5的（A）的示例是在晶體晶圓的定向平面（orientation flat）附近設有兩個一部分區域20aa的示例，但一部分區域20aa的位置或個數不限於圖5的（A）的示例，可變更為與目的相對應的適當的位置或個數。也可存在一部分區域20aa的個數為一個的情況。Furthermore, as shown in FIG. 5(A) , the case where the twinned regions 21 are respectively provided in the mutually separated partial regions 20aa of the outer peripheral portion 20a of the crystal wafer 10 is also an aspect of the present invention. As a specific example of the above-mentioned form, for example, when a metal film is formed as a protective film on a crystal wafer or when it is covered with a resist, a jig or a resist for forming a metal film on a part of the crystal wafer The area where the metal film or resist is not formed is maintained by a jig that is coated with the agent. In the case of the example of FIG. 5(A) , only the area of the crystal wafer that has a very high probability of unintentional etching due to not being covered by the protective film is made into the twin crystal area. Therefore, the outer peripheral portion 20 a Compared with the case where the entire area is twinned, the twinning process time can be shortened. Furthermore, the effects of the present invention can be obtained. In addition, the example in FIG. 5(A) is an example in which two partial regions 20aa are provided near the orientation flat of the crystal wafer, but the position or number of the partial regions 20aa is not limited to that in FIG. 5(A) The examples can be changed to the appropriate position or number corresponding to the purpose. There may be a case where the number of some areas 20aa is one.

另外，在使外周部20a的一部分區域20aa為雙晶化區域21的情況下，例如，如圖5的（B）所示，有時也會晶體晶圓的邊緣部成為非雙晶化區域30。並且，將此種晶體晶圓在氫氟酸系的濕式蝕刻液中浸漬規定時間後，由於邊緣部為非雙晶化區域30，因此與雙晶化區域相比更被蝕刻。圖5的（C）是表示所述狀況的觀察結果。即，圖5的（C）是蝕刻後的晶體晶圓沿著圖5的（B）的A-B線的剖面的觀察結果。在圖5的（C）中，橫軸是沿著A-B線的掃描距離（單位：mm），縱軸是所述區域中因蝕刻所產生的高度的變化（單位：μm）。在圖5的（C）中，可知雙晶化區域20aa（21）在蝕刻後高度也不變化，相對於此，晶體晶圓的邊緣部的非雙晶化區域30因被蝕刻而高度減小。但是，即便晶體晶圓的邊緣部被蝕刻，由於在接近所述邊緣部的區域存在雙晶區域，因此能夠降低在晶體晶圓的直徑方向的中心側產生起因於蝕刻的凹凸的程度。In addition, when a part of the region 20aa of the outer peripheral portion 20a is made into the twinned region 21, for example, as shown in FIG. 5(B), the edge portion of the crystal wafer may become the non-twinned region 30. . Furthermore, after such a crystal wafer is immersed in a hydrofluoric acid-based wet etching liquid for a predetermined time, the edge portion is etched more than the twinned region because it is the non-twinned region 30 . (C) of FIG. 5 is an observation result showing the above situation. That is, FIG. 5(C) is an observation result of a cross-section of the etched crystal wafer along line A-B of FIG. 5(B) . In (C) of FIG. 5 , the horizontal axis is the scanning distance (unit: mm) along line A-B, and the vertical axis is the change in height (unit: μm) caused by etching in the region. In (C) of FIG. 5 , it can be seen that the height of the twinned region 20aa ( 21 ) does not change after etching. In contrast, the height of the non-twinned region 30 at the edge of the crystal wafer is reduced by etching. . However, even if the edge portion of the crystal wafer is etched, since a twin crystal region exists in a region close to the edge portion, the degree of unevenness caused by etching on the center side in the diameter direction of the crystal wafer can be reduced.

即，在圖5所示的形態中，在不想要進行蝕刻的部位存在金屬膜或抗蝕劑膜，另一方面，在被蝕刻成非意圖的狀態的疑慮高的部位，例如在因成膜金屬膜或抗蝕劑膜等保護膜時的夾具等而無法形成金屬膜或抗蝕劑膜等保護膜的部位，存在雙晶化區域，因此利用雙晶化區域的效果，能夠減少從晶體晶圓的邊緣產生凹凸的現象。That is, in the form shown in FIG. 5 , a metal film or a resist film exists in a portion where etching is not intended, and on the other hand, there is a high risk of being etched into an unintentional state, such as a portion due to film formation. There are twinned regions in areas where a protective film such as a metal film or resist film cannot be formed, such as a jig when a protective film such as a metal film or a resist film is used. Therefore, the effect of the twinned region can be used to reduce the number of crystals from the crystal. The edges of the circle are concave and convex.

另外，如圖5的（B）所示，即便在晶體晶圓的邊緣產生非雙晶化區域30的情況下，如果所述非雙晶化區域30過大，則本發明的效果也會降低，因此在晶體晶圓的邊緣產生非雙晶化區域30的情況下，從非雙晶化區域30的晶體晶圓的邊緣向中心的寬度（深度尺寸）h1宜為2 mm以內，較佳為1 mm以內，更佳為0.5 mm以內。並且，雙晶化區域21本身從晶體晶圓的邊緣向中心的寬度（深度尺寸）h2或與h2正交的方向的尺寸W1、尺寸W2考慮成膜金屬膜或抗蝕劑膜等保護膜時的夾具的大小決定即可。但是，W1與W2相互可相同也可不同。所述尺寸h2、尺寸W1、尺寸W2分別宜為例如至少2 mm，但不限於此。在晶體晶圓為例如直徑四英寸（inch）的圓形的晶體晶圓的情況下，從外周向中心的雙晶化區域的h2較佳為例如2 mm以上且12.5 mm以下。更佳為h2為例如3 mm以上且12.5 mm以下。如果用相對於四英寸晶圓的直徑的比率來表示，則為2/101.6≒0.02以上且12.5/101.6≒0.213以下，因此所述比率為2%以上且12%以下。而且，W1、W2較佳為3 mm以上且16 mm以下，更佳為4 mm以上且16 mm以下。這是因為，如上所述在雙晶化區域過窄的情況下，無法充分地獲得防止被蝕刻成非意圖的狀態的效果，因此無法減輕晶體晶圓的操作及搬送時所產生的破裂。另一方面，這是因為，在雙晶化區域過寬的情況下，晶體振子的形成預定區域變窄，晶體振子的生產性受損。In addition, as shown in FIG. 5(B) , even if a non-twinned region 30 is generated at the edge of the crystal wafer, if the non-twinned region 30 is too large, the effect of the present invention will be reduced. Therefore, when the non-twinned region 30 is formed at the edge of the crystal wafer, the width (depth dimension) h1 from the edge of the non-twinned region 30 to the center of the crystal wafer is preferably within 2 mm, preferably 1 Within mm, preferably within 0.5 mm. In addition, the width (depth dimension) h2 of the twinned region 21 itself from the edge to the center of the crystal wafer or the dimensions W1 and W2 in the direction orthogonal to h2 are considered when forming a protective film such as a metal film or a resist film. It depends on the size of the fixture. However, W1 and W2 may be the same as or different from each other. The dimensions h2, W1, and W2 are each preferably at least 2 mm, for example, but are not limited thereto. When the crystal wafer is, for example, a circular crystal wafer with a diameter of four inches, h2 of the twinned region from the outer circumference to the center is preferably, for example, 2 mm or more and 12.5 mm or less. More preferably, h2 is, for example, 3 mm or more and 12.5 mm or less. Expressed as a ratio relative to the diameter of a four-inch wafer, it is 2/101.6≒0.02 or more and 12.5/101.6≒0.213 or less, so the ratio is 2% or more and 12% or less. Moreover, W1 and W2 are preferably 3 mm or more and 16 mm or less, more preferably 4 mm or more and 16 mm or less. This is because, as described above, when the twinned region is too narrow, the effect of preventing the crystal wafer from being etched into an unintentional state cannot be sufficiently obtained, and therefore cracks occurring during handling and transportation of the crystal wafer cannot be reduced. On the other hand, this is because when the twinned region is too wide, the area where the crystal oscillator is to be formed becomes narrow, and the productivity of the crystal oscillator is impaired.

而且，在雙晶化區域的範圍內，雙晶化率不限於此，但較佳為80%以上。這是因為，如圖3所示，有時晶體晶圓的外周部的一部分未被雙晶化而產生非雙晶化區域30，如果雙晶化區域變少，則無法充分地獲得防止被蝕刻成非意圖的狀態的效果，無法減輕晶體晶圓的操作及搬送時所產生的破裂。Furthermore, within the range of the twinned region, the twinned rate is not limited to this, but is preferably 80% or more. This is because, as shown in FIG. 3 , a part of the outer peripheral portion of the crystal wafer may not be twinned and a non-twinned region 30 may be generated. If the twinned region is reduced, sufficient protection against etching cannot be obtained. The effect of the crystal wafer being in an unintended state cannot reduce cracking caused by handling and transporting crystal wafers.

圖6是第二實施方式的晶體晶圓40的平面圖。第二實施方式的晶體晶圓40在外周部包括雙晶化區域50，且在連結各晶體振子60的杆的一部分或全部包括雙晶化區域70。藉由將所述杆的一部分或全部進行雙晶化，能夠防止各晶體振子的連結部分被蝕刻成非意圖的狀態而維持強度，從而能夠減輕在各晶體振子的連結部分產生破裂的現象。FIG. 6 is a plan view of the crystal wafer 40 of the second embodiment. The crystal wafer 40 of the second embodiment includes the twinned region 50 in the outer peripheral portion, and the twinned region 70 is included in part or all of the rods connecting the crystal oscillators 60 . By twin-crystalizing part or all of the rods, the strength can be maintained while preventing the connecting portions of the crystal oscillators from being etched into an unintentional state, thereby reducing the occurrence of cracks in the connecting portions of the crystal oscillators.

圖7是第三實施方式的晶體晶圓80的平面圖。第三實施方式的晶體晶圓80在外周部包括雙晶化區域90，且僅在各晶體振子100與杆連結的連結部包括雙晶化區域110。在僅將所述連結部進行雙晶化的情況下，也與第二實施方式同樣地，能夠防止各晶體振子的連結部分的非意圖的蝕刻，減輕在各晶體振子的連結部分產生破裂的現象。FIG. 7 is a plan view of the crystal wafer 80 of the third embodiment. The crystal wafer 80 of the third embodiment includes the twinned region 90 in the peripheral portion, and includes the twinned region 110 only in the connection portion where each crystal oscillator 100 and the rod are connected. Even when only the connection portion is twinned, unintentional etching of the connection portion of each crystal oscillator can be prevented and the occurrence of cracks in the connection portion of each crystal oscillator can be reduced, as in the second embodiment. .

2.晶體振子的製造方法 接下來，參照圖8～圖15，對本發明的晶體振子的製造方法的實施方式進行說明。本發明的製造方法是使用微影技術及濕式蝕刻技術的製造方法，且包括被稱作雙晶化的特殊步驟。因此，在圖9～圖15中，示出了晶體晶圓的平面圖、及將晶體晶圓的一部分Q放大的平面圖。進而，在圖9～圖15中的一部分的圖式中，也並用晶體晶圓的一部分Q沿著R-R線的剖面圖。 2. Manufacturing method of crystal oscillator Next, an embodiment of the crystal oscillator manufacturing method of the present invention will be described with reference to FIGS. 8 to 15 . The manufacturing method of the present invention uses photolithography technology and wet etching technology, and includes a special step called twining. Therefore, FIGS. 9 to 15 show a plan view of the crystal wafer and an enlarged plan view of a part Q of the crystal wafer. Furthermore, in some of the drawings in FIGS. 9 to 15 , a cross-sectional view of a part Q of the crystal wafer along line R-R is also used.

在所述製造方法中，首先，如圖8所示，準備晶體晶圓11，利用例如來自熱源120的雷射（laser）130將晶體晶圓11局部加熱，使外周部的一部分或全部雙晶化。另外，雙晶化的方法不限於利用雷射的局部加熱，也可為點加熱器（spot heater）等其他方法。而且，在所述製造方法的實施方式的情況下，為了認識圖1所示的晶體晶圓，而示出了將晶體晶圓的外周部20a及杆20b進行雙晶化的示例。然後，在晶體晶圓11形成用於形成耐蝕刻罩幕的金屬膜（未圖示）。In the manufacturing method, first, as shown in FIG. 8 , the crystal wafer 11 is prepared, and the crystal wafer 11 is locally heated using, for example, a laser 130 from a heat source 120 , so that part or all of the outer peripheral part is twinned. change. In addition, the method of twin crystallization is not limited to local heating using laser, but may also be other methods such as spot heater. Furthermore, in the embodiment of the manufacturing method, in order to recognize the crystal wafer shown in FIG. 1 , an example is shown in which the outer peripheral portion 20 a and the rod 20 b of the crystal wafer are twinned. Then, a metal film (not shown) for forming an etching-resistant mask is formed on the crystal wafer 11 .

如圖9所示，藉由眾所周知的微影技術，將形成於晶體晶圓11的金屬膜進行加工，在所述晶體晶圓11的表背兩面形成用於形成晶體片12的外形的耐蝕刻性罩幕13。 本實施方式的情況下的耐蝕刻性罩幕13包含：與晶體片12的外形相對應的部分、保持各晶體片的杆部分及連結晶體片與杆部分的部分（圖9中的連結部14）。而且，耐蝕刻性罩幕13是以對向的方式形成於晶體晶圓11的表背。 As shown in FIG. 9 , the metal film formed on the crystal wafer 11 is processed by well-known photolithography technology, and an etching-resistant film for forming the outer shape of the crystal sheet 12 is formed on both the front and back sides of the crystal wafer 11 . Sexual veil 13. The etching-resistant mask 13 in the present embodiment includes a portion corresponding to the outer shape of the crystal piece 12 , a rod portion that holds each crystal piece, and a portion that connects the crystal piece and the rod portion (the connecting portion 14 in FIG. 9 ). Moreover, the etching-resistant mask 13 is formed on the front and back of the crystal wafer 11 in an opposing manner.

接下來，將已形成耐蝕刻性罩幕13的晶體晶圓11在以氫氟酸為主的蝕刻液中浸漬規定時間。藉由所述處理，使得晶體晶圓11的未被耐蝕刻性罩幕13覆蓋的部分溶解，如圖10所示，可獲得晶體片的大致的外形。晶體晶圓11由於將外周部及杆進行雙晶化，因此在形成晶體片的外形的蝕刻步驟時，能夠防止外周部及杆被蝕刻成非意圖的狀態的現象。Next, the crystal wafer 11 on which the etching-resistant mask 13 has been formed is immersed in an etching liquid containing mainly hydrofluoric acid for a predetermined time. Through the above process, the portion of the crystal wafer 11 that is not covered by the etching-resistant mask 13 is dissolved, and as shown in FIG. 10 , a rough outline of the crystal wafer can be obtained. Since the crystal wafer 11 has the outer peripheral portion and the rods twinned, it is possible to prevent the outer peripheral portion and the rods from being etched into unintended states during the etching step for forming the outer shape of the crystal wafer.

接下來，從晶體晶圓11移除耐蝕刻性罩幕13。此時，在本發明的製造方法中，如圖11所示，僅移除耐蝕刻性罩幕13的相當於晶體片12的部分，而殘留相當於杆或連結部的部分。這是為了維持杆或連結部的強度。當然，根據設計，也可將相當於杆及連結部的部分的各自一部分或全部的耐蝕刻罩幕移除。Next, the etch-resistant mask 13 is removed from the crystal wafer 11 . At this time, in the manufacturing method of the present invention, as shown in FIG. 11 , only the portion of the etching-resistant mask 13 corresponding to the crystal piece 12 is removed, and the portion corresponding to the rod or the connecting portion remains. This is to maintain the strength of the rod or link. Of course, depending on the design, part or all of the etching-resistant mask may be removed from the parts corresponding to the rod and the connecting part.

接下來，再次將所述晶體晶圓11在以氫氟酸為主的蝕刻液中浸漬規定時間。此處，所謂規定時間，是指晶體片12的形成預定區域的厚度達到能夠滿足所要求的振盪頻率的規格的厚度為止的時間。圖12的（B）中示出了獲得了所述厚度的晶體片。晶體晶圓11由於將外周部及杆進行雙晶化，因此能夠防止外周部及杆被蝕刻成非意圖的狀態的現象。 另外，在本實施方式中，設置了使晶體片12的形成預定區域的厚度變薄的蝕刻步驟，但在晶體晶圓本身從最初便是能夠獲得規定的振盪頻率的厚度的情況下，不需要所述步驟。 Next, the crystal wafer 11 is again immersed in an etching liquid mainly containing hydrofluoric acid for a predetermined time. Here, the predetermined time refers to the time until the thickness of the region to be formed of the crystal piece 12 reaches a thickness that can satisfy the specifications of the required oscillation frequency. A crystal sheet having the above thickness is shown in (B) of FIG. 12 . Since the crystal wafer 11 has the outer peripheral portion and the rods twinned, it is possible to prevent the outer peripheral portion and the rods from being etched into unintended states. In addition, in this embodiment, an etching step is provided to thin the thickness of the region where the crystal wafer 12 is to be formed. However, this is not necessary when the crystal wafer itself has a thickness that can obtain a predetermined oscillation frequency from the beginning. described steps.

接下來，如圖13所示，從所述蝕刻結束的晶體晶圓11移除耐蝕刻性罩幕13，使晶體面露出。然後，藉由眾所周知的成膜方法，在所述晶體晶圓11整面形成用於形成晶體振子的激振電極及引出電極的金屬膜（未圖示）。Next, as shown in FIG. 13 , the etching-resistant mask 13 is removed from the etched crystal wafer 11 to expose the crystal surface. Then, a metal film (not shown) for forming the excitation electrode and extraction electrode of the crystal oscillator is formed on the entire surface of the crystal wafer 11 by a well-known film forming method.

接下來，如圖14所示，藉由眾所周知的微影技術及金屬蝕刻技術，將所述金屬膜圖案化成電極形狀，在晶體晶圓11形成作為電極15的激振電極15a及引出電極15b。由此，能夠獲得包括晶體片12、激振電極15a及引出電極15b的晶體振子16。Next, as shown in FIG. 14 , the metal film is patterned into an electrode shape using well-known lithography technology and metal etching technology, and the excitation electrode 15 a and the extraction electrode 15 b as the electrode 15 are formed on the crystal wafer 11 . Thereby, the crystal oscillator 16 including the crystal piece 12, the excitation electrode 15a, and the extraction electrode 15b can be obtained.

另外，一般而言，將晶體振子16安裝於較佳容器所得的結構物多稱作晶體振子。以下，使用圖15來說明所述晶體振子的典型例。另外，圖15是藉由平面圖及沿著圖中S-S線的剖面圖來表示將晶體振子16安裝於容器140的順序。In addition, generally speaking, a structure obtained by mounting the crystal oscillator 16 in a preferred container is often called a crystal oscillator. Hereinafter, a typical example of the crystal oscillator will be described using FIG. 15 . In addition, FIG. 15 shows the procedure of mounting the crystal oscillator 16 on the container 140 through a plan view and a cross-sectional view along the S-S line in the figure.

在圖14所示的狀態下，晶體振子16是經由連結部14結合於晶體晶圓11的狀態。因此，首先，對連結部14施加適當的外力，將晶體振子16從晶體晶圓11分離，如圖15的（A）圖所示進行單片化。 另一方面，作為容器，例如準備眾所周知的陶瓷封裝體（ceramic package）140（以下也稱作封裝體140）。如圖15的（B）及圖15的（C）圖所示，所述情況的封裝體140包括：收納晶體振子17的凹部140a、設置於所述凹部140a的底面的用於固定晶體振子的凸塊（bump）140b、以及設置於封裝體140的背面的安裝端子140c。凸塊140b與安裝端子140c藉由通孔配線（via wiring）（未圖示）電性連接。 In the state shown in FIG. 14 , the crystal oscillator 16 is coupled to the crystal wafer 11 via the connection portion 14 . Therefore, first, an appropriate external force is applied to the connection portion 14 to separate the crystal oscillator 16 from the crystal wafer 11 and then separate it into individual pieces as shown in (A) of FIG. 15 . On the other hand, as the container, for example, a well-known ceramic package 140 (hereinafter also referred to as package 140 ) is prepared. As shown in FIGS. 15(B) and 15(C) , the package 140 in this case includes a recess 140a for accommodating the crystal oscillator 17, and a recess 140a for fixing the crystal oscillator provided on the bottom surface of the recess 140a. A bump 140 b and a mounting terminal 140 c provided on the back surface of the package 140 . The bump 140b and the mounting terminal 140c are electrically connected through via wiring (not shown).

如圖15的（D）圖所示，在所述封裝體140的凹部140a內安裝晶體振子17。詳細而言，如圖15的（E）圖所示，在凸塊140b上塗布導電性黏接劑150，藉由所述導電性黏接劑150，將晶體振子17以引出電極15b的部位固定在凸塊140b。 然後，藉由眾所周知的方法將晶體片12的振盪頻率調整為規定值，接下來，使封裝體140的凹部140a內成為適度的真空或惰性氣體環境等，然後藉由眾所周知的方法利用蓋160來密封凹部140a。 如此獲得在封裝體140中收納有晶體振子17的結構的晶體振子。 As shown in (D) of FIG. 15 , the crystal oscillator 17 is installed in the recess 140 a of the package 140 . Specifically, as shown in (E) of FIG. 15 , a conductive adhesive 150 is applied to the bump 140 b, and the crystal oscillator 17 is fixed at the location where the electrode 15 b is extracted by the conductive adhesive 150 . at bump 140b. Then, the oscillation frequency of the crystal chip 12 is adjusted to a predetermined value by a well-known method. Next, the recess 140a of the package 140 is made into a moderate vacuum or an inert gas environment, and then the cover 160 is used by a well-known method. The recess 140a is sealed. In this manner, a crystal oscillator having a structure in which the crystal oscillator 17 is housed in the package 140 is obtained.

另外，在所述製造方法的實施方式中，說明了將晶體晶圓的外周部20a及杆20b進行雙晶化的示例，但如使用圖5所說明，在晶體晶圓10的外周部20a的相互分離的一部分區域20aa分別設置雙晶化區域21的情況也為本申請的製造方法的發明的形態。作為所述形態的具體例，例如，在晶體晶圓成膜作為保護膜的金屬膜的情況或覆著抗蝕劑的情況下，為晶體晶圓的一部分由金屬膜成膜用的夾具或抗蝕劑覆著用的夾具予以保持，而未形成金屬膜或抗蝕劑的區域。在晶體晶圓10的外周部20a的由所述夾具等覆蓋的一部分區域20aa分別設置雙晶化區域21的情況下，與將外周部20a整個區域進行雙晶化的情況相比，能夠縮短雙晶化處理的時間，因此就製造產能（throughput）的觀點而言較佳。In addition, in the embodiment of the manufacturing method, an example in which the outer peripheral portion 20a and the rod 20b of the crystal wafer 10 are twinned has been described. However, as explained using FIG. 5, in the outer peripheral portion 20a of the crystal wafer 10, The case where the twinned regions 21 are respectively provided in some of the regions 20aa that are separated from each other is also an aspect of the invention of the manufacturing method of the present application. As a specific example of the above-mentioned form, for example, when a metal film is formed as a protective film on a crystal wafer or when it is covered with a resist, a jig or a resist is used to form a metal film on a part of the crystal wafer. The etch-coated jig is used to maintain the area without forming a metal film or resist. When twining areas 21 are respectively provided in the partial area 20aa of the outer peripheral portion 20a of the crystal wafer 10 that is covered by the jig or the like, compared with the case where the entire outer peripheral portion 20a is twinned, the double crystallization time can be shortened. The time of the crystallization treatment is therefore better from the perspective of manufacturing throughput.

10:第一實施方式的晶體晶圓 11:晶體晶圓 12:晶體片 13:耐蝕刻罩幕 14:連結部 15:電極 15a:激振電極 15b:引出電極 16:晶體振子 20:框架形成預定區域 20a:外框 20b:杆 20aa:一部分區域 21:雙晶化區域 30:非雙晶化區域 40:第二實施方式的晶體晶圓 50:雙晶化區域 60:晶體振子 70:雙晶化區域 80:第三實施方式的晶體晶圓 90:雙晶化區域 100:晶體振子 110:雙晶化區域 120:熱源 130:雷射 140:陶瓷封裝體（封裝體）（容器） 140a:凹部 140b:凸塊 140c:安裝端子 150:導電性黏接劑 160:蓋 170:現有的晶體晶圓 180:凹凸 190:破裂 A-B、R-R、S-S:線 h1:寬度（深度尺寸） h2:寬度（深度尺寸）（尺寸） P、Q:晶體晶圓的一部分 W1、W2:尺寸 10: Crystal wafer of first embodiment 11:Crystal wafer 12: Crystal piece 13: Etching-resistant mask 14:Connection Department 15:Electrode 15a: Excitation electrode 15b: lead out electrode 16:Crystal oscillator 20: The frame forms a predetermined area 20a:Outer frame 20b: Rod 20aa: part of the area 21:Twin crystallization area 30: Non-twinned area 40: Crystal wafer of second embodiment 50:Twin crystallization area 60:Crystal oscillator 70:Twin crystallization area 80: Crystal wafer of third embodiment 90:Twin crystallization area 100:Crystal oscillator 110:Twin crystallization area 120:Heat source 130:Laser 140: Ceramic package (package) (container) 140a: concave part 140b: Bump 140c: Installation terminals 150: Conductive adhesive 160: cover 170: Existing crystal wafers 180: concave and convex 190:Broken A-B, R-R, S-S: lines h1: width (depth size) h2: width (depth size) (size) P, Q: part of the crystal wafer W1, W2: size

圖1是第一實施方式的晶體晶圓的平面圖。 圖2是第一實施方式的晶體晶圓的一例的平面圖。 圖3是第一實施方式的晶體晶圓的一例的平面圖。 圖4是第一實施方式的晶體晶圓的一例的平面圖。 圖5是第一實施方式的晶體晶圓的一例的平面圖。 圖6是第二實施方式的晶體晶圓的平面圖。 圖7是第三實施方式的晶體晶圓的平面圖。 圖8是說明本發明的晶體振子的製造方法的實施方式的說明圖。 圖9是接著圖8的製法例的說明圖。 圖10是接著圖9的製法例的說明圖。 圖11是接著圖10的製法例的說明圖。 圖12是接著圖11的製法例的說明圖。 圖13是接著圖12的製法例的說明圖。 圖14是接著圖13的製法例的說明圖。 圖15是接著圖14的製法例的說明圖。 圖16中，圖16的（A）圖是現有的晶體晶圓的平面圖。圖16的（B）圖是在現有的晶圓產生破裂的一例的平面圖。 FIG. 1 is a plan view of the crystal wafer according to the first embodiment. FIG. 2 is a plan view of an example of the crystal wafer according to the first embodiment. FIG. 3 is a plan view of an example of the crystal wafer according to the first embodiment. FIG. 4 is a plan view of an example of the crystal wafer according to the first embodiment. FIG. 5 is a plan view of an example of the crystal wafer according to the first embodiment. FIG. 6 is a plan view of the crystal wafer according to the second embodiment. FIG. 7 is a plan view of the crystal wafer according to the third embodiment. FIG. 8 is an explanatory diagram illustrating an embodiment of the crystal oscillator manufacturing method of the present invention. FIG. 9 is an explanatory diagram following the manufacturing method example of FIG. 8 . FIG. 10 is an explanatory diagram following the manufacturing method example of FIG. 9 . FIG. 11 is an explanatory diagram following the manufacturing method example of FIG. 10 . FIG. 12 is an explanatory diagram following the manufacturing method example of FIG. 11 . FIG. 13 is an explanatory diagram following the manufacturing method example of FIG. 12 . FIG. 14 is an explanatory diagram following the manufacturing method example of FIG. 13 . FIG. 15 is an explanatory diagram following the manufacturing method example of FIG. 14 . In FIG. 16 , (A) of FIG. 16 is a plan view of a conventional crystal wafer. (B) of FIG. 16 is a plan view of an example of cracking in a conventional wafer.

10:第一實施方式的晶體晶圓 10: Crystal wafer of first embodiment

20:框架形成預定區域 20: The frame forms a predetermined area

20a:外框 20a:Outer frame

20b:杆 20b: Rod

21:雙晶化區域 21:Twin crystallization area

P:晶體晶圓的一部分 P: part of the crystal wafer

Claims (9)

一種晶體晶圓，用於以矩陣狀形成多個晶體振子，所述晶體晶圓的特徵在於： 在晶體晶圓的外周部的一部分或全部包括雙晶化區域。 A crystal wafer used to form multiple crystal oscillators in a matrix, the crystal wafer is characterized by: A twinned region is included in part or all of the outer peripheral portion of the crystal wafer. 如請求項1所述的晶體晶圓，其中 所述晶體晶圓的外周部的一部分是下述區域，即，因將所述晶體晶圓進行濕式蝕刻時的耐蝕刻膜的成膜時所使用的固定夾具而無法成膜所述耐蝕刻膜的區域。 The crystal wafer according to claim 1, wherein A part of the outer peripheral portion of the crystal wafer is a region where the etching-resistant film cannot be formed due to a fixing jig used to form the etching-resistant film when the crystal wafer is wet-etched. membrane area. 如請求項1或2所述的晶體晶圓，其中 所述雙晶化區域是從晶體晶圓的外周向中心具有至少2 mm的寬度的區域。 A crystal wafer as claimed in claim 1 or 2, wherein The twinned area is an area having a width of at least 2 mm from the outer circumference to the center of the crystal wafer. 如請求項1或2所述的晶體晶圓，其中， 所述雙晶化區域是從晶體晶圓的外周向中心具有直徑的2%～12%的寬度的區域。 The crystal wafer according to claim 1 or 2, wherein, The twinned region is a region having a width of 2% to 12% of the diameter from the outer circumference to the center of the crystal wafer. 如請求項1或2所述的晶體晶圓，其中， 所述雙晶化區域內的雙晶化率為80%以上。 The crystal wafer according to claim 1 or 2, wherein, The twin crystallization rate in the twin crystallization region is more than 80%. 如請求項1所述的晶體晶圓，包括用於連結所述多個晶體振子的杆，且所述杆的一部分或全部為雙晶化區域。The crystal wafer according to claim 1 includes a rod for connecting the plurality of crystal oscillators, and a part or all of the rod is a twinned region. 如請求項6所述的晶體晶圓，包括連結所述多個晶體振子及所述杆的連結部，且所述連結部為雙晶化區域。The crystal wafer according to claim 6, including a connecting portion connecting the plurality of crystal oscillators and the rod, and the connecting portion is a twinned region. 一種晶體振子的製造方法，是使用微影技術及以氫氟酸為主的蝕刻液，在晶體晶圓以矩陣狀形成多個晶體振子的外形，所述晶體振子的製造方法的特徵在於包括下述步驟： 在所述晶體晶圓的至少外周部的一部分或全部形成雙晶化區域的步驟；以及 將形成有所述雙晶化區域的晶體晶圓浸漬於所述蝕刻液中而形成所述外形的步驟。 A method of manufacturing a crystal oscillator is to use photolithography technology and an etching solution mainly composed of hydrofluoric acid to form the shapes of multiple crystal oscillators in a matrix on a crystal wafer. The manufacturing method of the crystal oscillator is characterized by including the following Described steps: The step of forming a twinned region in at least part or all of the outer peripheral portion of the crystal wafer; and The step of immersing the crystal wafer on which the twinned region is formed in the etching liquid to form the outer shape. 如請求項8所述的晶體振子的製造方法，其中， 外周部的所述一部分是下述區域，即，當為了形成所述晶體振子的外形而在晶體晶圓的表背製膜針對所述蝕刻液的保護膜時，晶體晶圓的一部分由所述成膜用的夾具或抗蝕劑覆著用的夾具予以保持，而未形成金屬膜或抗蝕劑的區域。 The manufacturing method of a crystal oscillator as described in claim 8, wherein, The part of the outer peripheral portion is a region where a protective film against the etching liquid is formed on the front and back of the crystal wafer in order to form the outer shape of the crystal oscillator. The part of the crystal wafer is formed by the The area where the metal film or resist is not formed is maintained by a jig for film formation or a jig for resist coating.