TW202332027A - Light sensing device and method for making light sensing device - Google Patents

Light sensing device and method for making light sensing device Download PDF

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TW202332027A
TW202332027A TW111131034A TW111131034A TW202332027A TW 202332027 A TW202332027 A TW 202332027A TW 111131034 A TW111131034 A TW 111131034A TW 111131034 A TW111131034 A TW 111131034A TW 202332027 A TW202332027 A TW 202332027A
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photo
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李建志
陳瑞沛
陳宗漢
陳德銘
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友達光電股份有限公司
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Abstract

A light sensing device includes an active element array substrate and a light sensing substrate. The light sensing substrate is disposed over the active element substrate. The active element array substrate includes a first substrate and a transistor over the first substrate. The light sensing substrate includes a second substrate, a photoelectric conversion element, a data line, an upper common electrode, a first support and a second support. The photoelectric conversion element is under the second substrate. The data line is under the second substrate and near one side of the photoelectric conversion element. The upper electrode is under the second substrate and near another side of the photoelectric conversion element. The first support physically and electrically connects the data line and the active element array substrate. The second support physically and electrically connects the photoelectric conversion element and the active element array substrate. A method of manufacturing the light sensing device is also provided.

Description

光感測裝置以及製造光感測裝置的方法Optical sensing device and method of manufacturing optical sensing device

本揭示內容係關於具有主動元件和光感測元件的像素陣列的光感測裝置及其製造方法。The disclosure relates to a photo-sensing device having an active device and a pixel array of photo-sensing devices and a method of manufacturing the same.

光感測裝置可吸收光能而轉換成電子信號，並可藉此量測光通量或光功率，因此已廣泛地應用於數位相機、錄影機、手機、電腦等電子裝置中。光感測裝置也廣泛應用於安檢、工業檢測、或醫療診斷的非可見光(例如X光)檢測器。The photo-sensing device can absorb light energy and convert it into an electronic signal, which can be used to measure luminous flux or light power. Therefore, it has been widely used in electronic devices such as digital cameras, video recorders, mobile phones, and computers. Light sensing devices are also widely used in non-visible light (such as X-ray) detectors for security inspection, industrial inspection, or medical diagnosis.

現有的製造光感測裝置的方法是在一基板上依序地形成包含主動元件和光感測元件的像素陣列的多層堆疊。然而，設置在一堆疊中的訊號線與閘極線容易因距離相近而產生雜散電容而影響光感測裝置的性能。此外，目前主動元件與光感測元件於從同一基板製作，會發生在形成光感測元件製程時汙染主動元件的狀況，例如，氫汙染金屬氧化物(如，銦鎵鋅氧化物(IGZO)主動元件。The existing method of manufacturing a light sensing device is to sequentially form a multi-layer stack including an active device and a pixel array of light sensing devices on a substrate. However, the signal lines and the gate lines arranged in a stack are likely to generate stray capacitance due to the close distance, which will affect the performance of the photo-sensing device. In addition, the current active device and the photo-sensing device are fabricated from the same substrate, which may contaminate the active device during the process of forming the photo-sensing device. For example, hydrogen contaminates metal oxides (such as Indium Gallium Zinc Oxide (IGZO) active components.

本揭示內容的多個實施方式提供了一種光感測裝置及其製造方法，可將主動元件的製程與光感測元件的製程分開，因此可避免在形成光感測元件的製程時汙染主動元件的狀況，並且可降低在光感測裝置中的雜散電容。Various embodiments of the present disclosure provide a photo-sensing device and a manufacturing method thereof, which can separate the process of the active device from the process of the photo-sensing device, thereby avoiding contamination of the active device during the process of forming the photo-sensing device situation, and can reduce the stray capacitance in the photo-sensing device.

本揭示內容的一些實施方式提供了一種光感測裝置，包含主動元件陣列基板和光感測基板。光感測基板設置主動元件陣列基板上方。主動元件陣列基板包含第一基材和在第一基材上方的電晶體。光感測基板包含第二基材、光電轉換元件、數據線、上部共用電極、第一支撐件、第二支撐件。光電轉換元件在第二基材下方。數據線在第二基材下方並且鄰近光電轉換元件的一側。上部共用電極在第二基材下方並且鄰近光電轉換元件的另一側。第一支撐件物理性和電性連接數據線和主動元件陣列基板。第二支撐件物理性和電性連接光電轉換元件和主動元件陣列基板。在此亦提供製造光感測裝置的方法。Some embodiments of the present disclosure provide a photo-sensing device, including an active element array substrate and a photo-sensing substrate. The light sensing substrate is disposed above the active element array substrate. The active device array substrate includes a first substrate and transistors above the first substrate. The light-sensing substrate includes a second base material, a photoelectric conversion element, a data line, an upper common electrode, a first support member, and a second support member. The photoelectric conversion element is under the second substrate. The data line is under the second substrate and adjacent to one side of the photoelectric conversion element. The upper common electrode is below the second substrate and adjacent to the other side of the photoelectric conversion element. The first supporting member is physically and electrically connected to the data line and the active element array substrate. The second support is physically and electrically connected to the photoelectric conversion element and the active element array substrate. Methods of fabricating light sensing devices are also provided herein.

在一些實施方式中，在光感測裝置中，第一支撐件的高度為約1微米至約10微米。In some embodiments, in the photo-sensing device, the height of the first support is about 1 micron to about 10 microns.

在一些實施方式中，在光感測裝置中，電晶體具有銦鎵鋅氧化物(IGZO)層。In some embodiments, in a light sensing device, the transistor has an indium gallium zinc oxide (IGZO) layer.

在一些實施方式中，在光感測裝置中，介於主動元件陣列基板和光感測基板之間的空間為真空或以空氣填充。In some embodiments, in the photo-sensing device, the space between the active device array substrate and the photo-sensing substrate is vacuum or filled with air.

在一些實施方式中，在光感測裝置中，第一支撐件包含第一主體和在第一主體外側的第一導電層；第二支撐件包含第二主體和在第二主體外側的第二導電層。In some embodiments, in the light sensing device, the first support includes a first body and a first conductive layer outside the first body; the second support includes a second body and a second conductive layer outside the second body. conductive layer.

在一些實施方式中，光感測裝置還包含遮光層，在光感測基板的光電轉換元件下方並且在電晶體上方。In some embodiments, the photo-sensing device further includes a light-shielding layer below the photoelectric conversion element of the photo-sensing substrate and above the transistor.

在一些實施方式中，在光感測裝置中，遮光層與第二支撐件的第二導電層為連接的。In some embodiments, in the photo-sensing device, the light-shielding layer is connected to the second conductive layer of the second support.

在一些實施方式中，在光感測裝置中，遮光層與第二支撐件的第二導電層為分隔的。In some embodiments, in the light sensing device, the light shielding layer is separated from the second conductive layer of the second supporting member.

在一些實施方式中，光感測裝置還包含光波長轉換層，設置在光感測基板的第二基材上方。In some embodiments, the photo-sensing device further includes a light wavelength conversion layer disposed on the second substrate of the photo-sensing substrate.

在一些實施方式中，在光感測裝置中，主動元件陣列基板還包含第一電性連接墊和第二電性連接墊。第一電性連接墊在第一基材上方且側向地鄰近電晶體的第一源極/汲極區域，其中第一支撐件連接至第一電性連接墊。第二電性連接墊在第一基材上方且側向地鄰近電晶體的一第二源極/汲極區域，其中第二支撐件連接至第二電性連接墊。In some embodiments, in the light sensing device, the active device array substrate further includes a first electrical connection pad and a second electrical connection pad. The first electrical connection pad is above the first substrate and laterally adjacent to the first source/drain region of the transistor, wherein the first support member is connected to the first electrical connection pad. The second electrical connection pad is above the first substrate and laterally adjacent to a second source/drain region of the transistor, wherein the second support member is connected to the second electrical connection pad.

在一些實施方式中，在光感測裝置中，數據線和上部共用電極由一相同的金屬層所形成。In some embodiments, in the photo-sensing device, the data line and the upper common electrode are formed by the same metal layer.

在一些實施方式中，其中在俯視圖中，光感測裝置的數據線和上部共用電極呈指叉狀排列。In some embodiments, in a plan view, the data lines and the upper common electrodes of the photo-sensing device are interdigitated.

在一些實施方式中，在光感測裝置中，在光感測裝置的周邊區域中，主動元件陣列基板還包含下部共用電極和銀膠。銀膠連接主動元件陣列基板的下部共用電極和光感測基板的上部共用電極。In some embodiments, in the photo-sensing device, in the peripheral area of the photo-sensing device, the active device array substrate further includes a lower common electrode and silver glue. The silver glue connects the lower common electrode of the active element array substrate and the upper common electrode of the light sensing substrate.

在一些實施方式中，在光感測裝置中，在光感測裝置的周邊區域中主動元件陣列基板還包含下部數據線，並且光感基板還包含第三支撐件，第三支撐件物理性和電性連接數據線和下部數據線。In some embodiments, in the photo-sensing device, the active element array substrate further includes a lower data line in the peripheral area of the photo-sensing device, and the photo-sensing substrate further includes a third support, the third support is physically and Electrically connect the data line and the lower data line.

本揭示內容的一些實施方式提供了一種製造光感測裝置的方法，包含形成主動元件陣列基板；形成光感測基板；以及組裝主動元件陣列基板和光感測基板。主動元件陣列基板包含第一基材和在第一基材上方的電晶體。光感測基板包含第二基材、光電轉換元件、數據線、上部共用電極、第一支撐件、和第二支撐件。光電轉換元件在第二基材上方。數據線在第二基材上方並且鄰近光電轉換元件的一側。上部共用電極在第二基材上方並且鄰近光電轉換元件的另一側。第一支撐件在數據線上方。第二支撐件在光電轉換元件上方。其中經由第一支撐件而物理性和電性連接數據線和主動元件陣列基板，並且經由第二支撐件而物理性和電性連接光電轉換元件和主動元件陣列基板。Some embodiments of the present disclosure provide a method of manufacturing a photo-sensing device, including forming an active device array substrate; forming a photo-sensing substrate; and assembling the active device array substrate and the photo-sensing substrate. The active device array substrate includes a first substrate and transistors above the first substrate. The photo-sensing substrate includes a second base material, a photoelectric conversion element, a data line, an upper common electrode, a first support, and a second support. The photoelectric conversion element is over the second substrate. The data line is above the second substrate and adjacent to one side of the photoelectric conversion element. The upper common electrode is above the second substrate and adjacent to the other side of the photoelectric conversion element. The first supporting member is above the data line. The second support is above the photoelectric conversion element. The data line is physically and electrically connected to the active element array substrate through the first support, and the photoelectric conversion element is physically and electrically connected to the active element array substrate through the second support.

在一些實施方式中，在所述組裝主動元件陣列基板和光感測基板之後，介於主動元件陣列基板和光感測基板之間的空間為真空或以空氣填充。In some embodiments, after the assembly of the active device array substrate and the photo-sensing substrate, the space between the active device array substrate and the photo-sensing substrate is vacuumed or filled with air.

在一些實施方式中，製造光感測裝置的方法還包含薄化第一基材或第二基材。In some embodiments, the method of manufacturing a photo-sensing device further includes thinning the first substrate or the second substrate.

在一些實施方式中，在製造光感測裝置的方法中，光感測基板還包含遮光層，在光電轉換元件的與第二基材相對的一側上，並且在所述組裝主動元件陣列基板和光感測基板之後，遮光層在電晶體上方。In some embodiments, in the method of manufacturing a photo-sensing device, the photo-sensing substrate further includes a light-shielding layer on the side of the photoelectric conversion element opposite to the second substrate, and on the assembled active element array substrate After the light-sensing substrate, the light-shielding layer is above the transistor.

在一些實施方式中，製造光感測裝置的方法還包含在所述組裝主動元件陣列基板和光感測基板之後，在光感測基板的第二基材上方設置光波長轉換層。In some embodiments, the method for manufacturing a photo-sensing device further includes disposing an optical wavelength conversion layer on the second base material of the photo-sensing substrate after said assembling the active device array substrate and the photo-sensing substrate.

在一些實施方式中，在製造光感測裝置的方法中，主動元件陣列基板還包含第一電性連接墊和第二電性接墊。第一電性連接墊在基板上方且側向地鄰近電晶體的第一源極/汲極區域。第二電性連接墊在基板上方且側向地鄰近電晶體的第二源極/汲極區域。其中所述組裝主動元件陣列基板和光感測基板包含將第一支撐件對準和連接第一電性連接墊、和將第二支撐件對準和連接第二電性連接墊。In some embodiments, in the method of manufacturing the photo-sensing device, the active device array substrate further includes a first electrical connection pad and a second electrical contact pad. The first electrical connection pad is above the substrate and laterally adjacent to the first source/drain region of the transistor. The second electrical connection pad is above the substrate and laterally adjacent to the second source/drain region of the transistor. Wherein the assembling of the active device array substrate and the photo-sensing substrate includes aligning and connecting the first support to the first electrical connection pad, and aligning and connecting the second support to the second electrical connection pad.

在一些實施方式中，在製造光感測裝置的方法中，主動元件陣列基板的周邊區域還包含下部共用電極。其中所述組裝主動元件陣列基板和光感測基板包含在下部共用電極上方設置銀膠；和經由銀膠連接主動元件陣列基板的下部共用電極和光感測基板的上部共用電極。In some embodiments, in the method of manufacturing a photo-sensing device, the peripheral area of the active device array substrate further includes a lower common electrode. Wherein the assembling of the active element array substrate and the photo-sensing substrate includes setting silver glue above the lower common electrode; and connecting the lower common electrode of the active element array substrate and the upper common electrode of the photo-sensing substrate through the silver glue.

在一些實施方式中，在製造光感測裝置的方法中，主動元件陣列基板的周邊區域還包含下部數據線，並且在光感測基板的周邊區域還包含第三支撐件，並且所述組裝主動元件陣列基板和光感測基板還包含經由第三支撐件而物理性和電性連接數據線和下部數據線。In some embodiments, in the method for manufacturing a photo-sensing device, the peripheral area of the active element array substrate further includes a lower data line, and a third support member is further included in the peripheral area of the photo-sensing substrate, and the assembling active The element array substrate and the photo-sensing substrate also include physically and electrically connecting the data line and the lower data line through the third supporting member.

以下將以圖式及詳細說明清楚說明本揭示內容之精神，任何所屬技術領域中具有通常知識者在瞭解本揭示內容之較佳實施方式和實施例後，當可由本揭示內容所教示之技術，加以改變及修飾，其並不脫離本揭示內容之精神與範圍。The following will clearly illustrate the spirit of the disclosure with drawings and detailed descriptions. Anyone with ordinary knowledge in the technical field can learn the technology taught by the disclosure after understanding the preferred implementation modes and examples of the disclosure. Changes and modifications are made without departing from the spirit and scope of the disclosure.

在整個說明書中，相同的附圖標記表示相同的元件。應當理解，當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時，其可以直接在另一元件上或與另一元件連接，或者中間元件可以也存在。如本文所使用的，「連接」可以指物理及/或電性連接。再者，「電性連接」或「耦合」係可為二元件間存在其它元件。Throughout the specification, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" means that other elements exist between two elements.

應當理解，儘管術語「第一」、「第二」、「第三」等在本文中可以用於描述各種元件、組件、區域、或層，但是這些元件、組件、區域、或層不應受這些術語的限制。這些術語僅用於將一個元件、組件、區域、或層與另一個元件、組件、區域、或層區分開。因此，下面討論的「第一」元件、組件、區域、或層可以被稱為「第二」元件、組件、區域、或層而不脫離本文的教導。It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions or layers, these elements, components, regions or layers should not be constrained by limitations of these terms. These terms are only used to distinguish one element, component, region or layer from another element, component, region or layer. Thus, a "first" element, component, region or layer discussed below could be termed a "second" element, component, region or layer without departing from the teachings herein.

此外，諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係，如圖所示。應當理解，相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如，如果一個附圖中的裝置翻轉，則被描述為在其他元件的「下」側的元件將被定向在其他元件的「上」側。Additionally, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element as shown in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements.

本文參考作為理想化實施例的俯視示意圖來描述示例性實施例。因此，可以預期到作為例如製造技術及/或公差的結果的圖示的形狀變化。因此，本文所述的實施例不應被解釋為限於如本文所示的區域的特定形狀，而是包括例如由製造導致的形狀偏差。例如，示出或描述為平坦的區域通常可以具有粗糙及/或非線性特徵。此外，所示的銳角可以是圓的。因此，圖中所示的區域本質上是示意性的，並且它們的形狀不是旨在示出區域的精確形狀，並且不是旨在限制權利要求的範圍。Exemplary embodiments are described herein with reference to top schematic illustrations that are idealized embodiments. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances are to be expected. Thus, embodiments described herein should not be construed as limited to the particular shapes of regions as illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region shown or described as flat, may, typically, have rough and/or non-linear features. Additionally, acute corners shown may be rounded. Thus, the regions shown in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the claims.

第1圖繪示根據一些實施方式的光感測裝置的截面視圖。光感測裝置10包含像素陣列區域AR和周邊區域PR。為了清楚起見，在第1圖中僅繪示像素陣列區域AR包含一個像素區域，但像素陣列區域AR可包含多個像素區域所組成的陣列。在第1圖中的截面視圖顯示光感測裝置10包含主動元件陣列基板100、設置在主動元件陣列基板上方的光感測基板200、以及設置在光感基測基板上方的光波長轉換層300。主動元件陣列基板100包含第一基材102和在其上的堆疊層，光感測基板200包含第二基材202以及在第二基材202下方的堆疊層。也就是說，光感測裝置10是將包含主動元件的堆疊層和包含光感測元件的堆疊層分別地形成在不同的基板上，之後將包含主動元件的基板和包含光感測元件的基板對準並連接以形成光感測裝置。FIG. 1 illustrates a cross-sectional view of a light sensing device according to some embodiments. The light sensing device 10 includes a pixel array area AR and a peripheral area PR. For the sake of clarity, only one pixel area is shown in the pixel array area AR in FIG. 1 , but the pixel array area AR may include an array composed of a plurality of pixel areas. The cross-sectional view in FIG. 1 shows that the light sensing device 10 includes an active element array substrate 100, a light sensing substrate 200 disposed above the active element array substrate, and an optical wavelength conversion layer 300 disposed above the light sensing base substrate. . The active device array substrate 100 includes a first substrate 102 and stacked layers thereon, and the light sensing substrate 200 includes a second substrate 202 and stacked layers below the second substrate 202 . That is to say, in the photo-sensing device 10, the stacked layer including the active element and the stacked layer including the photo-sensing element are respectively formed on different substrates, and then the substrate including the active element and the substrate including the photo-sensing element are formed on different substrates. aligned and connected to form a light sensing device.

在一些實施方式中，光感測裝置10是偵測X光的感測器。在另一些實施方式中，光感測裝置10也可能是感測其它的光的感測器，例如紅外線或紫外線。In some embodiments, the light sensing device 10 is a sensor for detecting X-rays. In other embodiments, the light sensing device 10 may also be a sensor for sensing other light, such as infrared or ultraviolet.

在像素陣列區域AR中，主動元件陣列基板100包含第一基材102、電晶體110、第一電性連接墊140、和第二電性連接墊142。電晶體110設置在第一基材102上方。第一電性連接墊140設置在第一基材102上方且側向地鄰近電晶體110的一側。第二電性連接墊142設置在第一基材102上方且側向地鄰近電晶體110的另一側。In the pixel array area AR, the active device array substrate 100 includes a first substrate 102 , a transistor 110 , a first electrical connection pad 140 , and a second electrical connection pad 142 . The transistor 110 is disposed above the first substrate 102 . The first electrical connection pad 140 is disposed above the first substrate 102 and laterally adjacent to one side of the transistor 110 . The second electrical connection pad 142 is disposed above the first substrate 102 and laterally adjacent to the other side of the transistor 110 .

在一些實施方式中，第一基材102可能是硬質的基板，例如玻璃基板，或是可撓的基板，例如聚醯亞胺。In some embodiments, the first substrate 102 may be a rigid substrate, such as a glass substrate, or a flexible substrate, such as polyimide.

在一些實施方式中，電晶體110是薄膜電晶體，包含設置在第一基材102上方的導體層112(亦可稱為閘極)、設置在第一基材102上方和導體層112上方的第一介電層114(亦可稱為閘極介電層)、設置在第一介電層114上方的通道層116、在通道層116上方且分隔的第一源極/汲極區域120和第二源極/汲極區域122、以及覆蓋第一源極/汲極區域120、第二源極/汲極區域122、和通道層116的第二介電層130。In some embodiments, the transistor 110 is a thin film transistor, including a conductor layer 112 (also referred to as a gate) disposed above the first substrate 102 , a gate disposed above the first substrate 102 and above the conductor layer 112 . A first dielectric layer 114 (also referred to as a gate dielectric layer), a channel layer 116 disposed above the first dielectric layer 114, a first source/drain region 120 above and separated from the channel layer 116, and The second source/drain region 122 , and the second dielectric layer 130 covering the first source/drain region 120 , the second source/drain region 122 , and the channel layer 116 .

電晶體110是底部閘極型薄膜電晶體。在其他的實施方式中，其他類型的電晶體亦是可行的。導體層112位在第一金屬層M1，並且與閘極線電性連接(見第3A圖)。在一些實施方式中，通道層的材料可能是非晶態矽(a-Si)或是銦鎵鋅氧化物(InGaZnO, IGZO)。Transistor 110 is a bottom-gate thin film transistor. In other embodiments, other types of transistors are also possible. The conductive layer 112 is located on the first metal layer M1 and is electrically connected to the gate line (see FIG. 3A ). In some embodiments, the material of the channel layer may be amorphous silicon (a-Si) or indium gallium zinc oxide (InGaZnO, IGZO).

如在第1圖中所示，第一電性連接墊140與第一源極/汲極區域120是連續的金屬層，第二電性連接墊142與第二源極/汲極區域122是連續的金屬層。換言之，第一電性連接墊140、第一源極/汲極區域120、和第二源極/汲極區域122是在相同的第二金屬層M2。As shown in FIG. 1, the first electrical connection pad 140 and the first source/drain region 120 are a continuous metal layer, and the second electrical connection pad 142 and the second source/drain region 122 are a continuous metal layer. continuous metal layer. In other words, the first electrical connection pad 140, the first source/drain region 120, and the second source/drain region 122 are in the same second metal layer M2.

在像素陣列區域AR中，第二介電層130覆蓋第二金屬層M2，並且有多個開口，用以電性連接光感測基板200。In the pixel array area AR, the second dielectric layer 130 covers the second metal layer M2 and has a plurality of openings for electrically connecting the photo-sensing substrate 200 .

如在第1圖中所示，光感測基板200包含第二基材202、透明電極210、光電轉換元件220、數據線230、上部共用電極240、第三介電層250、第一支撐件260、和第二支撐件270。As shown in FIG. 1 , the light-sensing substrate 200 includes a second substrate 202, a transparent electrode 210, a photoelectric conversion element 220, a data line 230, an upper common electrode 240, a third dielectric layer 250, and a first support member. 260, and a second support 270.

如在第1圖中所示，透明電極210設置在第二基材202下方，光電轉換元件220設置在透明電極210下方。透明電極210的材料可例如是銦錫氧化物(ITO)。光電轉換元件220可例如是PIN二極體，包含第一型半導體材料層222、本徵半導體材料層224、和第二型半導體材料層226。As shown in FIG. 1 , the transparent electrode 210 is provided under the second substrate 202 , and the photoelectric conversion element 220 is provided under the transparent electrode 210 . The material of the transparent electrode 210 can be, for example, indium tin oxide (ITO). The photoelectric conversion element 220 can be, for example, a PIN diode, including a first-type semiconductor material layer 222 , an intrinsic semiconductor material layer 224 , and a second-type semiconductor material layer 226 .

數據線230設置在第二基材202下方並且鄰近透明電極210和光電轉換元件220的一側。數據線230與透明電極210是分隔的。The data line 230 is disposed under the second substrate 202 and adjacent to one side of the transparent electrode 210 and the photoelectric conversion element 220 . The data line 230 is separated from the transparent electrode 210 .

上部共用電極240設置在第二基材下方並且鄰近透明電極210和光電轉換元件220的另一側。上部共用電極240直接接觸透明電極210。如在第1圖中所示，數據線230和上部共用電極240由第三金屬層M3所形成。The upper common electrode 240 is disposed under the second substrate and adjacent to the other side of the transparent electrode 210 and the photoelectric conversion element 220 . The upper common electrode 240 directly contacts the transparent electrode 210 . As shown in FIG. 1, the data line 230 and the upper common electrode 240 are formed of the third metal layer M3.

第三介電層250覆蓋第三金屬層M3以及部分的光電轉換元件220。第三介電層250具有多個開口，以提供與主動元件陣列基板100的電性連接。The third dielectric layer 250 covers the third metal layer M3 and part of the photoelectric conversion element 220 . The third dielectric layer 250 has a plurality of openings for providing electrical connection with the active device array substrate 100 .

第一支撐件260位在數據線230下方並且連接至主動元件陣列基板100的第一電性連接墊140。第一支撐件260包含第一主體262和在第一主體262外側的第一導電層264。第一主體262的材料可以是光阻劑的材料。第一導電層264的材料可以是金屬。第一支撐件260可提供物理性連接以及電性連接的功能，將數據線230與第一電性連接墊140連接。在一些實施方式中，第一支撐件260的高度H1可在1微米至10微米的範圍內。The first supporting member 260 is located below the data line 230 and connected to the first electrical connection pad 140 of the active device array substrate 100 . The first supporter 260 includes a first body 262 and a first conductive layer 264 outside the first body 262 . The material of the first body 262 may be a material of photoresist. The material of the first conductive layer 264 may be metal. The first supporting member 260 can provide functions of physical connection and electrical connection, and connect the data line 230 with the first electrical connection pad 140 . In some embodiments, the height H1 of the first supporter 260 may be in the range of 1 micron to 10 microns.

第二支撐件270設置在光電轉換元件220下方，第二支撐件270用以連接光電轉換元件220和主動元件陣列基板100的第二電性連接墊142。第二支撐件270包含第二主體272和在第二主體272外側的第二導電層274。第二主體272的材料可以是光阻劑的材料。第二導電層274的材料可以是金屬。第二支撐件270可提供物理性連接以及電性連接的功能，將光電感測元件220與第二電性連接墊142連接。The second support 270 is disposed under the photoelectric conversion element 220 , and the second support 270 is used to connect the photoelectric conversion element 220 and the second electrical connection pad 142 of the active device array substrate 100 . The second supporter 270 includes a second body 272 and a second conductive layer 274 outside the second body 272 . The material of the second body 272 may be a material of photoresist. The material of the second conductive layer 274 may be metal. The second supporting member 270 can provide functions of physical connection and electrical connection, and connects the photoelectric sensing element 220 with the second electrical connection pad 142 .

遮光層276設置在光電轉換元件220下方，並與下方的主動元件陣列基板100的電晶體110至少部分地重疊。遮光層276用以避免光線照射到電晶體110。在一些實施方式中，遮光層276為金屬，並且與第二支撐件270的第二導電層274是一相同的金屬層面。在一些實施方式中，遮光層276與第二導電層274是連接的。在另一些實施方式中，遮光層276與第二導電層274是分隔的(參見第7B圖)。The light shielding layer 276 is disposed under the photoelectric conversion element 220 and at least partially overlaps with the transistor 110 of the underlying active device array substrate 100 . The light-shielding layer 276 is used to prevent light from irradiating the transistor 110 . In some embodiments, the light-shielding layer 276 is metal, and is the same metal layer as the second conductive layer 274 of the second supporter 270 . In some embodiments, the light shielding layer 276 is connected to the second conductive layer 274 . In other embodiments, the light shielding layer 276 is separated from the second conductive layer 274 (see FIG. 7B ).

如在第1圖中所示，在光感測裝置10的周邊區域PR中，在外側設置有框膠162，以連接主動元件陣列基板100的第一基材102和光感測基板200的第二基材202。此外，在周邊區域PR中，主動元件陣列基板100設置有下部共用電極150，並且經由銀膠160電性連接在主動元件陣列基板100的下部共用電極150和在光感測基板200的上部共用電極240。As shown in FIG. 1 , in the peripheral region PR of the photo-sensing device 10 , a sealant 162 is provided on the outside to connect the first substrate 102 of the active device array substrate 100 and the second substrate 102 of the photo-sensing substrate 200 . Substrate 202 . In addition, in the peripheral region PR, the active device array substrate 100 is provided with a lower common electrode 150, and is electrically connected to the lower common electrode 150 on the active device array substrate 100 and the upper common electrode on the photo-sensing substrate 200 via the silver glue 160. 240.

如在第1圖中所示，光波長轉換層300設置在光感測基板200的第二基材202上方。光波長轉換層300可將非可見光(例如X光)轉換成可對光電轉換元件220產生光電流效應的光。在一些實施方式中，光波長轉換層300包含閃爍體，閃爍體的材料可例如是碘化銫、鉈摻雜的碘化銫、或鈉摻雜的碘化銫、鋱摻雜的硫氧化釓、碲化鎘、或類似者。As shown in FIG. 1 , the light wavelength conversion layer 300 is disposed above the second substrate 202 of the light sensing substrate 200 . The light wavelength conversion layer 300 can convert non-visible light (such as X-ray) into light that can generate a photocurrent effect on the photoelectric conversion element 220 . In some embodiments, the optical wavelength conversion layer 300 includes a scintillator, and the material of the scintillator can be, for example, cesium iodide, thallium-doped cesium iodide, or sodium-doped cesium iodide, cerium-doped gadolinium oxysulfide , cadmium telluride, or the like.

如在第1圖中所示，將電晶體110設置在主動元件陣列基板100中，以及將光感測元件220、數據線230、上部共用電極240設置在光感測基板200中，並且將主動元件陣列基板100和光感測基板200對準並組裝。利用第一支撐件260來提供數據線230與主動元件陣列基板100的物理性和電性連接，並且利用第二支撐件270來提供光電轉換元件220與主動元件陣列基板的物理性和電性連接。因此，可將介於數據線和電晶體之間的距離增大。介於數據線和電晶體之間的距離增大可導致較少的寄生電容，和增加開口率。As shown in Figure 1, the transistor 110 is disposed in the active element array substrate 100, and the photo-sensing element 220, the data line 230, and the upper common electrode 240 are disposed in the photo-sensing substrate 200, and the active The element array substrate 100 and the light sensing substrate 200 are aligned and assembled. The first support 260 is used to provide the physical and electrical connection between the data line 230 and the active element array substrate 100, and the second support 270 is used to provide the physical and electrical connection between the photoelectric conversion element 220 and the active element array substrate. . Therefore, the distance between the data line and the transistor can be increased. The increased distance between the data lines and the transistors results in less parasitic capacitance, and increases the aperture ratio.

此外，介於主動元件陣列基板100和光感測基板200之間的空間290無設置固體材料，也就是說，空間290為空氣填充的。或是在另一些實施方式中，可在組裝完成後，抽除介於主動元件陣列基板100和光感測基板200之間的空間的空氣並將組裝完成的光感測裝置10密封，因此空間290為真空的。由於空間290無固態的介質，因此可更進一步降低介於數據線230和電晶體110之間的雜散電容。In addition, the space 290 between the active device array substrate 100 and the photo-sensing substrate 200 is not provided with solid material, that is, the space 290 is filled with air. Or in some other embodiments, after the assembly is completed, the air in the space between the active device array substrate 100 and the photo-sensing substrate 200 can be extracted and the assembled photo-sensing device 10 can be sealed, so the space 290 for vacuum. Since the space 290 has no solid medium, the stray capacitance between the data line 230 and the transistor 110 can be further reduced.

在通道層的材料為銦鎵鋅氧化物(IGZO)的實施方式中，由於IGZO的遷移率較高，漏電較低，因此所形成的光感測裝置具有較好的性能。但是，IGZO組件容易遭受氫離子的影響而造成薄膜電晶體的閾值電壓出現負漂移，導致IGZO薄膜電晶體的噪聲偏高，進而影響光感測裝置的品質。由於例如PIN二極體的光電轉換元件在製程中會使用到矽烷和氫；因此，避免電晶體的IGZO層受到PIN二極體的製程的氫的影響是極待解決的問題。根據本揭示內容的多個實施方式的光感測裝置，由於將包含IGZO的通道層116的電晶體110形成在主動元件陣列基板100，和將光電轉換層220形成在光感測基板200，因此光電轉換層220的製程氣體中的氫不會影響到包含IGZO的通道層116的電晶體110，因此可避免氫對IGZO電晶體的不利影響。In an embodiment in which the material of the channel layer is Indium Gallium Zinc Oxide (IGZO), since IGZO has higher mobility and lower leakage, the formed photo-sensing device has better performance. However, the IGZO component is easily affected by hydrogen ions, which causes a negative shift in the threshold voltage of the thin film transistor, which leads to high noise of the IGZO thin film transistor, thereby affecting the quality of the light sensing device. Since silane and hydrogen are used in the process of photoelectric conversion elements such as PIN diodes; therefore, preventing the IGZO layer of transistors from being affected by the hydrogen in the process of PIN diodes is an urgent problem to be solved. According to the photo-sensing device of various embodiments of the present disclosure, since the transistor 110 including the channel layer 116 of IGZO is formed on the active element array substrate 100, and the photoelectric conversion layer 220 is formed on the photo-sensing substrate 200, therefore The hydrogen in the process gas of the photoelectric conversion layer 220 will not affect the transistor 110 of the channel layer 116 including IGZO, so the adverse effect of hydrogen on the IGZO transistor can be avoided.

第2圖繪示根據一些實施方式的製造光感測裝置的方法。第3A圖至第7B圖繪示根據一些實施方式在製造光感測裝置的多個中間階段的視圖。FIG. 2 illustrates a method of fabricating a photo-sensing device according to some embodiments. 3A-7B illustrate views at various intermediate stages in the fabrication of a photo-sensing device according to some embodiments.

在第2圖的方法500中，步驟502為形成主動元件陣列基板。請參看第3A圖和第3B圖。第3A圖繪示在主動元件陣列基板100中的像素陣列區域AR的一局部的俯視佈局圖，第3B圖繪示沿著第3A圖的線A-A’所截取的截面視圖。為了清楚起見，第3A圖僅繪示包含導體層112和閘極線170的第一金屬層M1、通道層116、和第二金屬層M2。In the method 500 of FIG. 2 , step 502 is to form an active device array substrate. Please refer to Figure 3A and Figure 3B. FIG. 3A shows a partial top layout view of the pixel array region AR in the active device array substrate 100, and FIG. 3B shows a cross-sectional view taken along line A-A' of FIG. 3A. For clarity, FIG. 3A only shows the first metal layer M1 including the conductor layer 112 and the gate line 170 , the channel layer 116 , and the second metal layer M2 .

主動元件陣列基板100包含第一基材102、設置在第一基材102上方的第一金屬層M1、設置在第一基材上方的第一介電層114、設置在第一介電層114上方的第二金屬層M2、和設置在第一介電層114上方和介於分隔的第二金屬層M2之間的通道層116、以及設置在第二金屬層M2和通道層116上方的第二介電層130。The active device array substrate 100 includes a first substrate 102, a first metal layer M1 disposed above the first substrate 102, a first dielectric layer 114 disposed above the first substrate, and a first dielectric layer 114 disposed on the first dielectric layer 114. The upper second metal layer M2, and the channel layer 116 disposed above the first dielectric layer 114 and between the separated second metal layer M2, and the second metal layer M2 and the channel layer 116 disposed above The second dielectric layer 130 .

在第2圖的方法500中，步驟504為形成光感測基板。請參看第4A圖和第4B圖。第4A圖繪示在光感測基板200中的像素陣列區域AR的一局部的俯視佈局圖，第4B圖繪示沿著第4A圖的線A-A’所截取的截面視圖。為了清楚起見，第4A圖僅繪示光電轉換元件220的層面、數據線230和上部共用電極240的層面、以及第一導電層264和第二導電層274的層面。In the method 500 of FIG. 2 , step 504 is to form a photo-sensing substrate. See Figures 4A and 4B. FIG. 4A shows a partial top layout view of the pixel array region AR in the photo-sensing substrate 200, and FIG. 4B shows a cross-sectional view taken along line A-A' of FIG. 4A. For clarity, FIG. 4A only shows the level of the photoelectric conversion element 220 , the level of the data line 230 and the upper common electrode 240 , and the level of the first conductive layer 264 and the second conductive layer 274 .

形成光感測基板200包含形成第二基材202、在第二基材上方的透明電極210、光電轉換元件220、數據線230、上部共用電極240、第三介電層250、在數據線上方的第一支撐件260、在光電轉換元件220上方的第二支撐件270、和在光電轉換元件上方的遮光層276。Forming the photo-sensing substrate 200 includes forming the second substrate 202, the transparent electrode 210 above the second substrate, the photoelectric conversion element 220, the data line 230, the upper common electrode 240, the third dielectric layer 250, and the above data line. The first support 260, the second support 270 above the photoelectric conversion element 220, and the light shielding layer 276 above the photoelectric conversion element.

在第2圖的方法500中，步驟506組裝主動元件陣列基板和光感測基板。第5A圖繪示將光感測基板200上下翻轉，使第二基材202在上方，並且第一支撐件260對準主動元件陣列基板100的第一電性連接墊140，第二支撐件270對準主動元件陣列基板100的第二電性連接墊142。In the method 500 of FIG. 2 , step 506 assembles the active device array substrate and the light sensing substrate. FIG. 5A shows that the photo-sensing substrate 200 is turned upside down, so that the second substrate 202 is on top, and the first supporting member 260 is aligned with the first electrical connection pad 140 of the active device array substrate 100, and the second supporting member 270 Align the second electrical connection pad 142 of the active device array substrate 100 .

第5B圖繪示將主動元件陣列基板100與光感測基板200組裝連接之後的截面視圖。在一些實施方式中，，將第一支撐件260的第一導電層264與第一電性連接墊140連接，將第二支撐件270的第二導電層274與第二電性連接墊142連接。FIG. 5B shows a cross-sectional view after the active device array substrate 100 and the photo-sensing substrate 200 are assembled and connected. In some embodiments, the first conductive layer 264 of the first support 260 is connected to the first electrical connection pad 140 , and the second conductive layer 274 of the second support 270 is connected to the second electrical connection pad 142 .

在一些實施方式中，在組裝時，在周邊區域PR(未繪示)的連接為在主動元件陣列基板100的第一基材102的邊緣設置框膠162，以及在下部共用電極150上設置銀膠160。之後，框膠162連接主動元件陣列基板100的第一基材102的邊緣和光感測基板200的第二基材202的邊緣。銀膠160連接主動元件陣列基板100的下部共用電極150和光感測基板200的上部共用電極240。In some embodiments, during assembly, the connection in the peripheral region PR (not shown) is to set the sealant 162 on the edge of the first base material 102 of the active device array substrate 100, and set silver on the lower common electrode 150. Glue 160. Afterwards, the sealant 162 connects the edge of the first substrate 102 of the active device array substrate 100 and the edge of the second substrate 202 of the light sensing substrate 200 . The silver glue 160 connects the lower common electrode 150 of the active device array substrate 100 and the upper common electrode 240 of the light sensing substrate 200 .

在一些實施方式中，在連接主動元件陣列基板100和光感測基板200之後，可選地，可將內部的空間290的空氣抽除，因此介於主動元件陣列基板100和光感測基板200之間的空間290為真空的，因此可降低介於數據線230和電晶體110之間的雜散電容。In some embodiments, after connecting the active device array substrate 100 and the photo-sensing substrate 200, optionally, the air in the inner space 290 can be pumped, so that it is interposed between the active device array substrate 100 and the photo-sensing substrate 200 The space 290 is vacuum, so the stray capacitance between the data line 230 and the transistor 110 can be reduced.

在第2圖的方法500中，可選的，步驟508為將主動元件陣列基板的基材減薄或將光感測基板的基材減薄。參看第6圖，在主動元件陣列基板100的第一基材102或光感測基板200的第二基材202的材料是玻璃的實施方式中，在組裝完成之後，可將第一基材102、第二基材202、或二者減薄。減薄之後的第一基材102、或第二基材202的厚度可在約300微米至約500微米的範圍內，例如，300微米、350微米、400微米、450微米、500微米。因此可將光感測裝置10薄化，薄化後的光感測裝置10可形成為較輕薄的光感測裝置。此外，薄化後的玻璃基材具有可撓性，因此之後可施加應力，使光感測裝置10形成為具有曲面的裝置。薄化後的光感測裝置可更佳地運用於不同場域的光感測，例如，在應用於工業檢測時，以X光感測裝置來檢測管線(例如油管)內部，可將X光感測裝置製造成具有圓形或橢圓形截面的形狀。In the method 500 of FIG. 2 , optionally, step 508 is thinning the base material of the active device array substrate or thinning the base material of the light sensing substrate. Referring to FIG. 6, in an embodiment where the material of the first base material 102 of the active element array substrate 100 or the second base material 202 of the light sensing substrate 200 is glass, after the assembly is completed, the first base material 102 can be , the second substrate 202, or both are thinned. The thickness of the thinned first substrate 102 or the second substrate 202 may be in the range of about 300 microns to about 500 microns, for example, 300 microns, 350 microns, 400 microns, 450 microns, 500 microns. Therefore, the photo-sensing device 10 can be thinned, and the thinned photo-sensing device 10 can be formed into a lighter and thinner photo-sensing device. In addition, the thinned glass substrate is flexible, so stress can be applied thereafter to form the photo-sensing device 10 into a device with a curved surface. The thinned optical sensing device can be better used in optical sensing in different fields. For example, when it is applied to industrial inspection, the X-ray sensing device is used to detect the inside of the pipeline (such as oil pipe), and the X-ray can be used The sensing device is fabricated in a shape with a circular or oval cross-section.

在第2圖的方法500中，步驟510為在光感測基板上設置光波長轉換層。參見第7A圖，光波長轉換層300設置在光感測基板200的第二基材202上方。之後，當偵測非可見光(例如X光)時，可轉換為光電二極體220可感應的光。在一些實施方式中，光波長轉換層300是閃爍體層，可利用蒸鍍的方式，將閃爍體層設置於第二基材202上方。In the method 500 of FIG. 2 , step 510 is disposing an optical wavelength conversion layer on the light sensing substrate. Referring to FIG. 7A , the light wavelength conversion layer 300 is disposed on the second substrate 202 of the light sensing substrate 200 . Afterwards, when detecting non-visible light (such as X-ray), it can be converted into light that can be sensed by the photodiode 220 . In some embodiments, the light wavelength conversion layer 300 is a scintillator layer, and the scintillator layer can be disposed on the second substrate 202 by evaporation.

第7B圖是根據一些實施方式的光感測裝置的截面圖。第7B圖的光感測裝置類似於第7A圖的光感測裝置，因此不再重複描述，差異之處在於第7A圖的遮光層276與第二支撐件270的第二導電層274為連續的層面；而第7B圖的遮光層276與第二支撐件270的第二導電層274為分隔的。Figure 7B is a cross-sectional view of a light sensing device according to some embodiments. The photo-sensing device in FIG. 7B is similar to the photo-sensing device in FIG. 7A, so the description will not be repeated. The difference is that the light-shielding layer 276 in FIG. 7A is continuous with the second conductive layer 274 of the second support member 270 level; and the light shielding layer 276 of FIG. 7B is separated from the second conductive layer 274 of the second support member 270 .

第8A圖至第8E圖繪示根據一些實施方式的主動元件陣列基板和光感測基板的線路的對準方式。為了清楚起見，第8A圖至第8E圖繪示閘極層、數據線、上部共用電極、下部共用電極、以及在周邊區域的轉接點。FIG. 8A to FIG. 8E illustrate the alignment of the lines of the active device array substrate and the photo-sensing substrate according to some embodiments. For clarity, FIG. 8A to FIG. 8E illustrate gate layers, data lines, upper common electrodes, lower common electrodes, and transition points in peripheral areas.

第8A圖繪示主動元件陣列基板的線路的分佈。主動元件陣列基板100包含多條閘極線170、多條下部數據線180、和下部共用電極150。FIG. 8A shows the distribution of lines on the active device array substrate. The active device array substrate 100 includes a plurality of gate lines 170 , a plurality of lower data lines 180 , and a lower common electrode 150 .

多條閘極線170從周邊區域PR延伸至像素陣列區域AR，沿著第一方向(X方向)延伸並且平行地排列。多條下部數據線180設置在主動元件陣列基板100的周邊區域PR，並且沿著第二方向(Y方向)延伸並且平行地排列。下部共用電極150設置在主動元件陣列基板100的周邊區域PR。在周邊區域PR的下部數據線180與在光感測基板200的對應的數據線230連接，並且將線路導出至光感測裝置10的外圍接線。在周邊區域PR的下部共用電極150與上部共用電極240連接，之後將線路導出至光感測裝置10的外圍接線。The plurality of gate lines 170 extend from the peripheral region PR to the pixel array region AR, extend along the first direction (X direction) and are arranged in parallel. A plurality of lower data lines 180 are disposed at the peripheral region PR of the active device array substrate 100 , extend along the second direction (Y direction) and are arranged in parallel. The lower common electrode 150 is disposed on the peripheral region PR of the active device array substrate 100 . The lower data line 180 in the peripheral region PR is connected to the corresponding data line 230 in the photo-sensing substrate 200 , and leads the line to the peripheral wiring of the photo-sensing device 10 . The lower common electrode 150 in the peripheral region PR is connected to the upper common electrode 240 , and then leads to the peripheral wiring of the photo-sensing device 10 .

第8B圖繪示光感測基板200的數據線230和上部共用電極240的配置。多條數據線230從周邊區域PR延伸至像素陣列區域AR，沿著第二方向(Y方向)平行地排列。在周邊區域PR的轉接點232為數據線230與下部數據線180的電性轉接處。FIG. 8B shows the arrangement of the data line 230 and the upper common electrode 240 of the photo-sensing substrate 200 . A plurality of data lines 230 extend from the peripheral region PR to the pixel array region AR, and are arranged in parallel along the second direction (Y direction). The transition point 232 in the peripheral area PR is an electrical transition point between the data line 230 and the lower data line 180 .

如在第8B圖中所示，在光感測基板200的上部共用電極240包含在周邊區域PR的第一部分240A，以及延伸至像素陣列區域AR的多個第二部分240B。上部共用電極240的第一部分240A在周邊區域PR沿著第一方向延伸，上部共用電極240的多個第二部分240B從第一部分240A沿著第二方向延伸且平行地排列。從第8B圖的俯視圖可見，上部共用電極240的多個第二部分240B與多條數據線230呈指叉狀排列。在周邊區域PR的轉接點242為上部共用電極240與下部共用電極150的電性連接處。As shown in FIG. 8B, the common electrode 240 on the upper portion of the photo-sensing substrate 200 includes a first portion 240A in the peripheral region PR, and a plurality of second portions 240B extending to the pixel array region AR. The first portion 240A of the upper common electrode 240 extends along the first direction in the peripheral region PR, and the plurality of second portions 240B of the upper common electrode 240 extend from the first portion 240A along the second direction and are arranged in parallel. It can be seen from the top view of FIG. 8B that the plurality of second portions 240B of the upper common electrode 240 and the plurality of data lines 230 are interdigitated. The transition point 242 in the peripheral region PR is an electrical connection between the upper common electrode 240 and the lower common electrode 150 .

第8C圖繪示將主動元件陣列基板和光感測基板基板組裝之後的俯視圖。多條閘極線170沿著第一方向延伸，多條數據線230和上部共用電極240(多個第二部分240B)沿著第二方向延伸並且與閘極線170相交。在光感測裝置10的周邊區域PR，在轉接點232處，在光感測基板200的數據線230轉接至在主動元件陣列基板100的下部數據線。在轉接點242處，在光感測基板200的上部共用電極240轉接至在主動元件陣列基板100的下部共用電極150。在一些實施方式中，在周邊區域PR的主動元件陣列基板100的下部數據線180是數據線的扇出區，也就是說，在組裝主動元件陣列基板100和光感測基板200時，將在光感測基板的多條數據線230對準於在主動元件陣列基板100的扇出區(亦即下部數據線180)。FIG. 8C is a top view after assembling the active device array substrate and the photo-sensing substrate. A plurality of gate lines 170 extends along a first direction, and a plurality of data lines 230 and upper common electrodes 240 (a plurality of second parts 240B) extend along a second direction and intersect the gate lines 170 . In the peripheral region PR of the photo-sensing device 10 , at the transfer point 232 , the data line 230 on the photo-sensing substrate 200 is transferred to the lower data line on the active device array substrate 100 . At the transition point 242 , the upper common electrode 240 on the photo-sensing substrate 200 is transitioned to the lower common electrode 150 on the active device array substrate 100 . In some embodiments, the lower data line 180 of the active device array substrate 100 in the peripheral region PR is the fan-out area of the data line, that is, when the active device array substrate 100 and the light sensing substrate 200 are assembled, the optical The plurality of data lines 230 of the sensing substrate are aligned to the fan-out area (ie, the lower data lines 180 ) of the active device array substrate 100 .

第8D圖繪示在周邊區域的轉接點232處的截面視圖。在周邊區域PR，光感測基板200還包含第三支撐件280，第三支撐件280物理性和電性連接在光感測基板200的數據線230和在主動元件陣列基板100的下部數據線180。第三支撐件280的結構類似於第一支撐件260和第二支撐件270。第三支撐件280包含第三主體282和在第三主體282外側的第三導電層284。FIG. 8D shows a cross-sectional view at the transition point 232 in the peripheral area. In the peripheral area PR, the photo-sensing substrate 200 also includes a third support 280, the third support 280 is physically and electrically connected to the data line 230 on the photo-sensing substrate 200 and the lower data line on the active element array substrate 100. 180. The structure of the third supporter 280 is similar to that of the first supporter 260 and the second supporter 270 . The third supporter 280 includes a third body 282 and a third conductive layer 284 outside the third body 282 .

第8E圖繪示在周邊區域的轉接點242處的截面視圖。在周邊區域PR，光感測基板200的上部共用電極240經由銀膠160而電性連接至在主動元件陣列基板100的下部共用電極150。FIG. 8E shows a cross-sectional view at the transition point 242 in the peripheral area. In the peripheral region PR, the upper common electrode 240 of the photo-sensing substrate 200 is electrically connected to the lower common electrode 150 of the active device array substrate 100 through the silver glue 160 .

根據本揭示內容的多個實施方式的光感測裝置，由於數據線在上層的基板(光感測基板)，而連接多個電晶體的閘極的閘極線在下層的基板(主動元件陣列基板)，因此數據線和閘極線之間的距離較遠，例如約1微米至10微米，因此可減少介於數據線和閘極線之間的雜散電容，增加開口率。再者，將上層的基板和下層的基板組裝之後，可將外側的基材薄化，因此可製作較輕薄的產品、或是可撓性的產品。此外，將具有主動元件陣列的基板和具有光感測元件的基板分開地製造，可減少製程的時間，並且各自的基板的製程可花較少道的工序。According to the photo-sensing device of various embodiments of the present disclosure, since the data lines are on the upper substrate (photo-sensing substrate), the gate lines connecting the gates of multiple transistors are on the lower substrate (active element array). substrate), so the distance between the data line and the gate line is relatively long, such as about 1 micron to 10 microns, so that the stray capacitance between the data line and the gate line can be reduced and the aperture ratio can be increased. Furthermore, after the upper substrate and the lower substrate are assembled, the outer base material can be thinned, so that lighter and thinner products or flexible products can be produced. In addition, manufacturing the substrate with the active device array and the substrate with the light-sensing device separately can reduce the processing time, and the processing of the respective substrates can take fewer steps.

此外，在包含銦鎵鋅氧化物(IGZO)作為通道層的電晶體的光感測裝置中，由於可將電晶體的製程與光電轉換元件(例如PIN二極體)的製程分隔，因此可避免在光電轉換元件的製程中的氫對於IGZO通道層的不利影響。In addition, in a photo-sensing device including an indium gallium zinc oxide (IGZO) transistor as a channel layer, since the process of the transistor can be separated from the process of the photoelectric conversion element (such as a PIN diode), it can avoid Adverse effects of hydrogen in the process of photoelectric conversion elements on the IGZO channel layer.

雖然本揭示內容已以多個實施方式和實施例揭露如上，然其並非用以限定本揭示內容，任何熟習此技藝者，在不脫離本揭示內容之精神和範圍內，當可作各種之更動與潤飾，因此本揭示內容之保護範圍當視後附之申請專利範圍所界定者為準。Although the present disclosure has been disclosed above with multiple implementations and examples, it is not intended to limit the present disclosure. Anyone skilled in the art can make various changes without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of this disclosure should be defined by the scope of the appended patent application.

10:光感測裝置 100:主動元件陣列基板 102:第一基材 110:電晶體 112:導體層 114:第一介電層 116:通道層 120:第一源極/汲極區域 122:第二源極/汲極區域 130:第二介電層 140:第一電性連接墊 142:第二電性連接墊 150:下部共用電極 160:銀膠 162:框膠 170:閘極線 180:下部數據線 200:光感測基板 202:第二基材 210:透明電極 220:光電轉換元件 222:第一型半導體材料層 224:本徵半導體材料層 226:第二型半導體材料層 230:數據線 232:轉接點 240:上部共用電極 240A:第一部分 240B:第二部分 242:轉接點 250:第三介電層 260:第一支撐件 262:第一主體 264:第一導電層 270:第二支撐件 272:第二主體 274:第二導電層 276:遮光層 280:第三支撐件 282:第三主體 284:第三導電層 290:空間 300:光波長轉換層 500:方法 502:步驟 504:步驟 506:步驟 508:步驟 510:步驟 AR:像素陣列區域 H1:高度 M1:第一金屬層 M2:第二金屬層 M3:第三金屬層 PR:周邊區域 X:第一方向 Y:第二方向 10: Light sensing device 100: active element array substrate 102: The first substrate 110: Transistor 112: conductor layer 114: the first dielectric layer 116: Channel layer 120: first source/drain region 122: Second source/drain region 130: second dielectric layer 140: the first electrical connection pad 142: the second electrical connection pad 150: lower common electrode 160: silver glue 162: frame glue 170: gate line 180: Lower data line 200: Light sensing substrate 202: Second substrate 210: transparent electrode 220: photoelectric conversion element 222: first type semiconductor material layer 224: Intrinsic semiconductor material layer 226: second type semiconductor material layer 230: data line 232: Transition point 240: Upper common electrode 240A: Part I 240B: Part Two 242: Transition point 250: the third dielectric layer 260: the first support 262: The first subject 264: The first conductive layer 270: Second support 272: Second subject 274: second conductive layer 276: shading layer 280: The third support 282: The third subject 284: The third conductive layer 290: space 300: Optical wavelength conversion layer 500: method 502: Step 504: step 506: Step 508: Step 510: step AR: Pixel Array Area H1: height M1: first metal layer M2: second metal layer M3: The third metal layer PR: Surrounding area X: first direction Y: the second direction

為讓本揭示內容之上述和其他目的、特徵、優點與實施方式能更明顯易懂，所附圖式之說明如下。 第1圖是根據一些實施方式的光感測裝置的截面視圖。 第2圖是根據一些實施方式的製造光感測裝置的方法的流程圖。 第3A圖是根據一些實施方式的光感測裝置的主動元件陣列基板的局部俯視佈局圖。 第3B圖是沿著第3A圖的線A-A’的主動元件陣列基板的截面視圖。 第4A圖是根據一些實施方式的光感測裝置的光感測基板的局部俯視佈局圖。 第4B圖是沿著第4A圖的線A-A’的光感測基板的截面視圖。 第5A圖是根據一些實施方式，繪示將主動元件陣列基板與光感測基板對準。 第5B圖是根據一些實施方式，將主動元件陣列基板和光感測基板組裝後的光感測裝置的截面視圖。 第6圖是根據一些實施方式，在將光感測裝置減薄之後的截面視圖。 第7A圖是根據一些實施方式，在設置閃爍體層之後的感測裝置的截面視圖。 第7B圖是根據一些實施方式，在設置閃爍體層之後的感測裝置的截面視圖。 第8A圖是根據一些實施方式的光感測裝置的主動元件陣列基板的俯視圖。 第8B圖是根據一些實施方式的光感測裝置的光感測基板的俯視圖。 第8C圖是根據一些實施方式將主動元件陣列基板和光感測基板組裝之後的俯視圖。 第8D圖繪示根據一些實施方式的光感測裝置的周邊區域的轉接點的截面視圖。 第8E圖繪示根據一些實施方式的光感測裝置的周邊區域的轉接點的截面視圖。 In order to make the above and other objects, features, advantages and implementations of the present disclosure more comprehensible, the accompanying drawings are described as follows. FIG. 1 is a cross-sectional view of a light sensing device according to some embodiments. FIG. 2 is a flowchart of a method of fabricating a light sensing device according to some embodiments. FIG. 3A is a partial top layout view of an active device array substrate of a light sensing device according to some embodiments. FIG. 3B is a cross-sectional view of the active device array substrate along line A-A' of FIG. 3A. FIG. 4A is a partial top layout view of a photo-sensing substrate of a photo-sensing device according to some embodiments. FIG. 4B is a cross-sectional view of the photo-sensing substrate along line A-A' of FIG. 4A. FIG. 5A illustrates the alignment of the active device array substrate and the photo-sensing substrate according to some embodiments. FIG. 5B is a cross-sectional view of a photo-sensing device after an active device array substrate and a photo-sensing substrate are assembled according to some embodiments. Figure 6 is a cross-sectional view of a photo-sensing device after thinning, according to some embodiments. Figure 7A is a cross-sectional view of a sensing device after providing a scintillator layer, according to some embodiments. Figure 7B is a cross-sectional view of a sensing device after providing a scintillator layer, according to some embodiments. FIG. 8A is a top view of an active device array substrate of a light sensing device according to some embodiments. FIG. 8B is a top view of a light-sensing substrate of a light-sensing device according to some embodiments. FIG. 8C is a top view after assembling the active device array substrate and the photo-sensing substrate according to some embodiments. FIG. 8D illustrates a cross-sectional view of a transition point in a peripheral region of a light sensing device according to some embodiments. FIG. 8E shows a cross-sectional view of a transition point in a peripheral region of a light sensing device according to some embodiments.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

10:光感測裝置 10: Light sensing device

100:主動元件陣列基板 100: active element array substrate

102:第一基材 102: The first substrate

110:電晶體 110: Transistor

112:導體層 112: conductor layer

114:第一介電層 114: the first dielectric layer

116:通道層 116: Channel layer

120:第一源極/汲極區域 120: first source/drain region

122:第二源極/汲極區域 122: Second source/drain region

130:第二介電層 130: second dielectric layer

140:第一電性連接墊 140: the first electrical connection pad

142:第二電性連接墊 142: the second electrical connection pad

150:下部共用電極 150: lower common electrode

160:銀膠 160: silver glue

162:框膠 162: frame glue

200:光感測基板 200: Light sensing substrate

202:第二基材 202: Second substrate

210:透明電極 210: transparent electrode

220:光電轉換元件 220: photoelectric conversion element

222:第一型半導體材料層 222: first type semiconductor material layer

224:本徵半導體材料層 224: Intrinsic semiconductor material layer

226:第二型半導體材料層 226: second type semiconductor material layer

230:數據線 230: data line

240:上部共用電極 240: Upper common electrode

250:第三介電層 250: the third dielectric layer

260:第一支撐件 260: the first support

262:第一主體 262: The first subject

264:第一導電層 264: The first conductive layer

270:第二支撐件 270: Second support

272:第二主體 272: Second subject

274:第二導電層 274: second conductive layer

276:遮光層 276: shading layer

290:空間 290: space

300:光波長轉換層 300: Optical wavelength conversion layer

AR:像素陣列區域 AR: Pixel Array Area

H1:高度 H1: height

M1:第一金屬層 M1: first metal layer

M2:第二金屬層 M2: second metal layer

M3:第三金屬層 M3: The third metal layer

PR:周邊區域 PR: Surrounding area

Claims (12)

一種光感測裝置，包含： 一主動元件陣列基板，包含： 一第一基材；和 一電晶體，在該第一基材上方；以及 一光感測基板，設置在該主動元件陣列基板上方，包含： 一第二基材； 一光電轉換元件，在該第二基材下方； 一數據線，在該第二基材下方並且鄰近該光電轉換元件的一側； 一上部共用電極，在該第二基材下方並且鄰近該光電轉換元件的另一側； 一第一支撐件，物理性和電性連接該數據線和該主動元件陣列基板；和 一第二支撐件，物理性和電性連接該光電轉換元件和該主動元件陣列基板。 A light sensing device comprising: An active element array substrate, including: a first substrate; and a transistor over the first substrate; and A light-sensing substrate, arranged above the active element array substrate, includes: a second substrate; a photoelectric conversion element under the second substrate; a data line, under the second substrate and adjacent to one side of the photoelectric conversion element; an upper common electrode, under the second substrate and adjacent to the other side of the photoelectric conversion element; A first supporting member physically and electrically connects the data line and the active element array substrate; and A second supporting member physically and electrically connects the photoelectric conversion element and the active element array substrate. 如請求項1所述之光感測裝置，其中該第一支撐件的高度為約1微米至約10微米。The photo-sensing device as claimed in claim 1, wherein the height of the first support member is about 1 μm to about 10 μm. 如請求項1所述之光感測裝置，其中該電晶體具有銦鎵鋅氧化物(IGZO)層。The light sensing device as claimed in claim 1, wherein the transistor has an indium gallium zinc oxide (IGZO) layer. 如請求項1所述之光感測裝置，其中： 該第一支撐件包含一第一主體和在該第一主體外側的一第一導電層；和 該第二支撐件包含一第二主體和在該第二主體外側的一第二導電層。 The light sensing device as claimed in item 1, wherein: The first support includes a first body and a first conductive layer outside the first body; and The second support includes a second body and a second conductive layer outside the second body. 如請求項1所述之光感測裝置，還包含： 一遮光層，在該光感測基板的該光電轉換元件下方並且在該電晶體上方。 The light sensing device as described in claim 1, further comprising: A light-shielding layer is below the photoelectric conversion element of the light-sensing substrate and above the transistor. 如請求項1所述之光感測裝置，還包含： 一光波長轉換層，設置在該光感測基板的該第二基材上方。 The light sensing device as described in claim 1, further comprising: A light wavelength conversion layer is disposed on the second base material of the light sensing substrate. 如請求項1所述之光感測裝置，其中該主動元件陣列基板還包含： 一第一電性連接墊，在該第一基材上方且側向地鄰近該電晶體的一第一源極/汲極區域，其中該第一支撐件連接至該第一電性連接墊；和 一第二電性連接墊，在該第一基材上方且側向地鄰近該電晶體的一第二源極/汲極區域，其中該第二支撐件連接至該第二電性連接墊。 The photo-sensing device as described in Claim 1, wherein the active element array substrate further comprises: a first electrical connection pad over the first substrate and laterally adjacent to a first source/drain region of the transistor, wherein the first support member is connected to the first electrical connection pad; and A second electrical connection pad is above the first substrate and laterally adjacent to a second source/drain region of the transistor, wherein the second support is connected to the second electrical connection pad. 如請求項1所述之光感測裝置，其中該數據線和該上部共用電極由一相同的金屬層所形成。The photo-sensing device as claimed in claim 1, wherein the data line and the upper common electrode are formed of a same metal layer. 如請求項1所述之光感測裝置，其中在一俯視圖中，該數據線和該上部共用電極呈指叉狀排列。The photo-sensing device as claimed in claim 1, wherein in a top view, the data line and the upper common electrode are interdigitated. 如請求項1所述之光感測裝置，其中在該光感測裝置的一周邊區域中，該主動元件陣列基板還包含： 一下部共用電極；和 一銀膠，連接該主動元件陣列基板的該下部共用電極和該光感測基板的該上部共用電極。 The photo-sensing device according to claim 1, wherein in a peripheral area of the photo-sensing device, the active device array substrate further includes: a lower common electrode; and A silver paste is used to connect the lower common electrode of the active device array substrate and the upper common electrode of the photo-sensing substrate. 如請求項1所述之光感測裝置，其中在光感測裝置的一周邊區域中，該主動元件陣列基板還包含一下部數據線，並且該光感基板還包含一第三支撐件，該第三支撐件物理性和電性連接該數據線和該下部數據線。The photo-sensing device according to claim 1, wherein in a peripheral area of the photo-sensing device, the active device array substrate further includes a lower data line, and the photo-sensing substrate further includes a third support member, the The third supporting member physically and electrically connects the data line and the lower data line. 一種製造光感測裝置的方法，包含： 形成一主動元件陣列基板其包含： 一第一基材； 一電晶體，在該第一基材上方； 形成一光感測基板其包含： 一第二基材； 一光電轉換元件，在該第二基材上方； 一數據線，在該第二基材上方並且鄰近該光電轉換元件的一側； 一上部共用電極，在該第二基材上方並且鄰近該光電轉換元件的另一側； 一第一支撐件，在該數據線上方；和 一第二支撐件，在該光電轉換元件上方；以及 組裝該主動元件陣列基板和該光感測基板，其中經由該第一支撐件而物理性和電性連接該數據線和該主動元件陣列基板，並且經由該第二支撐件而物理性和電性連接該光電轉換元件和該主動元件陣列基板。 A method of manufacturing a light sensing device, comprising: Forming an active element array substrate which includes: a first substrate; a transistor, on the first substrate; forming a light-sensing substrate comprising: a second substrate; a photoelectric conversion element on the second substrate; a data line, on the side of the second substrate and adjacent to the photoelectric conversion element; an upper common electrode, above the second substrate and adjacent to the other side of the photoelectric conversion element; a first support, above the data line; and a second support, above the photoelectric conversion element; and Assembling the active element array substrate and the photo-sensing substrate, wherein the data line and the active element array substrate are physically and electrically connected via the first support, and physically and electrically connected via the second support connecting the photoelectric conversion element and the active element array substrate.
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