TW202321623A - Exhaust gas scrubber - Google Patents
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本發明是有關於一種半導體處理裝置,特別是有關於一種尾氣滌氣裝置。The invention relates to a semiconductor processing device, in particular to a tail gas scrubbing device.
半導體的生產過程會使用大量的易燃性、腐蝕性或高毒性的反應氣體,但是在許多半導體製程中反應氣體的利用率非常低,因此在製程中未完全反應的殘餘氣體及反應生成物必須排出反應製程室。這些混合氣體一般稱為製程廢氣或是尾氣都必須經由轉化為無害或可處理的物質才能排出。The production process of semiconductors will use a large amount of flammable, corrosive or highly toxic reactive gases, but the utilization rate of reactive gases in many semiconductor processes is very low, so the residual gases and reaction products that have not completely reacted in the process must be Drain the reaction process chamber. These mixed gases are generally called process waste gas or exhaust gas, which must be converted into harmless or treatable substances before they can be discharged.
現行尾氣系統主要由和反應製程室相接的渦輪真空幫浦(turbo pump)、機械幫浦及局部尾氣處理系統(local scrubber system)所構成。尾氣經由渦輪真空幫浦、排氣管道及機械幫浦依序抽出反應製程室,再送入局部尾氣處理系統進行處理後送到中央尾氣處理系統(central scrubber system)排出。The current exhaust system is mainly composed of a turbo pump connected to the reaction process chamber, a mechanical pump and a local scrubber system. The exhaust gas is sequentially extracted from the reaction process chamber through the turbo vacuum pump, exhaust pipe and mechanical pump, and then sent to the local exhaust gas treatment system for treatment, and then sent to the central exhaust gas treatment system (central scrubber system) for discharge.
為了妥善處理尾氣,目前有許多種技術被提出及使用。舉例而言,目前有一種現有技術在排放尾氣之前,會使用抽氣幫浦將尾氣排放至燃燒洗滌塔進行尾氣處理,如臺灣第I487872號發明專利。然而,燃燒洗滌塔對於含氟化合物處理效果不佳,而且須隨時保持運作並提供大量燃料氣體,因此成本大幅增加且耗費能源,且燃料氣體為易燃***性氣體,會增加公安危險。又,目前雖然有另一種現有技術採用觸媒熱裂解法,惟觸媒會有老化及毒化問題,且觸媒更換及回收處理成本相當高。此外,觸媒熱裂解法同樣須隨時保持運作且同樣會耗費大量能源。In order to properly deal with exhaust gas, many technologies have been proposed and used at present. For example, there is currently a prior art that uses a suction pump to discharge the exhaust gas to a combustion scrubber for exhaust gas treatment before discharging the exhaust gas, such as Taiwan Patent No. I487872. However, combustion scrubbers are not effective in treating fluorine-containing compounds, and must be kept in operation at all times to provide a large amount of fuel gas, so the cost is greatly increased and energy is consumed, and the fuel gas is a flammable and explosive gas, which will increase public safety hazards. In addition, although there is another prior art that uses catalytic pyrolysis, the catalyst has problems of aging and poisoning, and the cost of replacing and recycling the catalyst is quite high. In addition, the catalytic pyrolysis method also needs to be kept in operation at all times and also consumes a lot of energy.
除此之外,目前雖有技術使用電漿火炬洗滌塔進行尾氣處理,如臺灣第I285066 號發明專利,電漿雖已被證實可有效分解尾氣,尤其針對須高溫處理的全氟碳化合物((Perfluorinated Compounds, PFCs)。惟其係在大氣壓力下運行,須耗費大量能源,同時因為電漿溫度超過上千度,系統零組件不但成本髙且使用壽命短。尤其大氣電漿的穩定性不佳,容易因為操作條件的變化而產生電漿熄滅的問題。In addition, although there are currently technologies using plasma torch scrubbers for tail gas treatment, such as Taiwan's invention patent No. I285066, plasma has been proven to effectively decompose tail gas, especially for perfluorocarbons that require high-temperature treatment (( Perfluorinated Compounds, PFCs). However, it operates under atmospheric pressure and consumes a lot of energy. At the same time, because the temperature of the plasma exceeds thousands of degrees, the system components are not only costly but also have a short service life. Especially the stability of atmospheric plasma is not good. It is easy to cause the problem of plasma extinguishing due to changes in operating conditions.
另一方面目前已有理論技術提出在機械幫浦前加裝電漿處理裝置,在低氣壓下進行尾氣處理。結果顯示,因為在低氣壓下電子能量較高能有效解離尾氣,雖然處理效果良好,但是因為電漿處理裝置直接和渦輪真空幫浦後端相接,會有氣體反應物回流污染製程的疑慮,故無法被半導體製程所接受,目前並未使用。On the other hand, there are currently theoretical and technical proposals to install a plasma treatment device before the mechanical pump to treat the tail gas under low pressure. The results show that the high energy of the electrons can effectively dissociate the exhaust gas under low pressure. Although the treatment effect is good, but because the plasma treatment device is directly connected to the back end of the turbo vacuum pump, there will be doubts about the backflow of gas reactants to pollute the process, so Unacceptable for semiconductor processes and not currently used.
現行機械幫浦多採兩段式組合,即第一段為增壓幫浦(Booster Pump),第二段為乾式幫浦(Dry Pump)。增壓幫浦因抽氣速率(pumping rate)大能加速系統達到較低氣壓,以利於第二段乾式幫浦達成操作設定氣壓。現有機械幫浦操作必須在第二段(後段)乾式幫浦引入大量吹淨氣體(purge gas),如氮氣以稀釋易燃性、腐蝕性或高毒性的尾氣,同時以減緩在製程中生成之固體微粒造成之管道堵塞問題。由於氣體流量相當大,必須使用大功率的抽氣幫浦,無形中增加運作成本且耗費能源。而且,大量氮氣後續進入現行之局部尾氣處理系統如燃燒式或是熱反應式洗滌塔,會產生大量氮氧化物(NOx)等溫室氣體,造成二次污染環境。The current mechanical pump usually adopts a two-stage combination, that is, the first stage is a booster pump (Booster Pump), and the second stage is a dry pump (Dry Pump). The booster pump can accelerate the system to reach a lower air pressure due to its high pumping rate, which is beneficial for the second-stage dry pump to achieve the operating set air pressure. Existing mechanical pump operation must introduce a large amount of purge gas (purge gas) in the second stage (rear stage) of the dry pump, such as nitrogen to dilute flammable, corrosive or highly toxic exhaust gases, and at the same time to slow down the formation of the gas in the process Pipeline blockage caused by solid particles. Due to the large gas flow, a high-power pump must be used, which will increase the operating cost and consume energy virtually. Moreover, if a large amount of nitrogen enters the current local exhaust gas treatment system such as a combustion type or a thermal reaction type scrubber, a large amount of greenhouse gases such as nitrogen oxides (NOx) will be generated, causing secondary pollution to the environment.
再者,即使引入大量吹淨氣體,在某些製程中固態粒子依然會阻塞第二段(後段)的乾式幫浦,尤其是其出口處。這會嚴重降低 抽氣效率,同時提高乾式幫浦的操作電流,不但增加能源消耗增加營運成本,甚至造成乾式幫浦損壞引發製程停機。 Furthermore, even if a large amount of purge gas is introduced, solid particles will still block the second stage (rear stage) of the dry pump in some processes, especially at its outlet. This will seriously reduce the pumping efficiency, and at the same time increase the operating current of the dry pump, which will not only increase energy consumption and increase operating costs, but may even cause damage to the dry pump and cause process shutdown.
為了解決上述習知技術之問題,本發明之目的係在提供一種可以有效處理尾氣的系統,且能降低機械幫浦能源消耗及大幅減少氮氧化物(NOx)等溫室氣體產生量,同時能有效解決固態粒阻塞的問題以提升乾式幫浦使用壽命。In order to solve the problems of the above-mentioned prior art, the purpose of the present invention is to provide a system that can effectively treat exhaust gas, and can reduce the energy consumption of mechanical pumps and greatly reduce the production of greenhouse gases such as nitrogen oxides (NOx), and can effectively Solve the problem of solid particle clogging to increase the service life of dry pumps.
為達前述目的,本發明提出一種尾氣滌氣裝置,用以捕捉及收集排放自一尾氣產生源之一尾氣,該尾氣滌氣裝置至少包含:一水槽,其係儲存有一水溶液,且該水溶液係產生一水氣;一反應腔,其係利用一負壓吸力將該水氣與該尾氣輸送至該反應腔中,其中該尾氣至少包含可與該水氣產生一反應之一製程廢氣,藉以使得該水氣接觸該尾氣中之該製程廢氣並進行該反應而得到至少一產物;一冷阱結構,其係連接該反應腔,該冷阱結構包含:一第一腔體;一導入管柱經由該第一腔體之一頂側貫穿式設於該第一腔體之一腔室中且朝著該第一腔體之一底側之一開口之方向延伸,該第一腔體之該腔室係經由該導入管柱連通至該反應腔:一導出管設於該第一腔體之一排放口上:以及一冷卻元件設於該第一腔體之該腔室上,藉以對流經該冷阱結構之該產物進行一冷凝捕捉處理,並且從該第一腔體之該排放口排放出該冷凝捕捉處理後之該尾氣;以及一集塵腔,其係設於該冷阱結構之該第一腔體之該底側上,且經由該第一腔體之該底側之該開口連通至該第一腔體之該腔室,用以聚集受離心力甩出以及/或者是受重力掉落之該產物。In order to achieve the aforementioned purpose, the present invention proposes a tail gas scrubber for catching and collecting tail gas discharged from a tail gas generation source. The tail gas scrubber at least includes: a water tank, which stores an aqueous solution, and the aqueous solution is A water vapor is generated; a reaction chamber, which uses a negative pressure suction to transport the water vapor and the tail gas into the reaction chamber, wherein the tail gas at least contains a process waste gas that can react with the water vapor, so that The water vapor contacts the process exhaust gas in the tail gas and performs the reaction to obtain at least one product; a cold trap structure, which is connected to the reaction chamber, and the cold trap structure includes: a first cavity; an introduction column through A top side of the first cavity is penetratingly arranged in a cavity of the first cavity and extends toward an opening of a bottom side of the first cavity, the cavity of the first cavity The chamber is connected to the reaction chamber via the introduction column: an outlet pipe is arranged on a discharge port of the first chamber; and a cooling element is arranged on the chamber of the first chamber to convect the flow through the cooling chamber. The product of the trap structure is subjected to a condensation capture treatment, and the tail gas after the condensation capture treatment is discharged from the discharge port of the first cavity; and a dust collection chamber is arranged on the second cold trap structure On the bottom side of a cavity, and through the opening of the bottom side of the first cavity communicated with the chamber of the first cavity, used to collect the centrifuge thrown out and/or drop by gravity of the product.
其中,更包含一微波產生器設於該反應腔上,藉以提供一微波,輔助該水氣與該尾氣中之該製程廢氣產生該反應以得到該產物。Wherein, a microwave generator is arranged on the reaction chamber to provide a microwave to assist the reaction between the water vapor and the process waste gas in the tail gas to obtain the product.
其中,該微波產生器係以一微波產生源產生該微波,且經由一波導管將該微波導入該反應腔中。Wherein, the microwave generator uses a microwave generating source to generate the microwave, and guides the microwave into the reaction cavity through a waveguide.
其中,該波導管更包含一微波匹配器,利用調整該微波之反射量,以將該微波導入該反應腔中。Wherein, the waveguide further includes a microwave matching device, which is used to guide the microwave into the reaction cavity by adjusting the reflection amount of the microwave.
其中,該水氣係經由一水氣輸送管從該水槽輸送至該反應腔中,且該尾氣係經由一尾氣輸送管從該尾氣產生源輸送至該反應腔中。Wherein, the water gas is transported from the water tank to the reaction chamber through a water gas delivery pipe, and the tail gas is sent from the tail gas generation source to the reaction chamber through a tail gas delivery pipe.
其中,該水氣輸送管具有一流量控制閥,且該流量控制閥之一開啟角度係對應於該尾氣中之該製程廢氣之流量,藉以在維持該尾氣之一抽速之條件下捕集該產物。Wherein, the water-gas delivery pipe has a flow control valve, and the opening angle of the flow control valve is corresponding to the flow rate of the process waste gas in the tail gas, so as to capture the waste gas under the condition of maintaining a pumping speed of the tail gas. product.
其中,該水槽設有一加熱元件,用以將該水槽中之該水溶液加熱至一預設溫度,且該預設溫度係對應於該尾氣中之該製程廢氣之流量,藉以在維持該尾氣之該抽速之條件下捕捉該產物。Wherein, the water tank is provided with a heating element for heating the aqueous solution in the water tank to a preset temperature, and the preset temperature is corresponding to the flow rate of the process waste gas in the tail gas, so as to maintain the flow rate of the tail gas The product was captured under conditions of pumping speed.
其中,該冷阱結構之該第一腔體之該排放口係連通至可產生該負壓吸力之一抽氣幫浦。Wherein, the discharge port of the first cavity of the cold trap structure is connected to a suction pump that can generate the negative pressure suction.
其中,該第一腔體之管徑及長度係對應於該抽氣幫浦之一抽速,藉以在維持該尾氣之一抽速之條件下捕捉該產物。Wherein, the pipe diameter and length of the first cavity correspond to the pumping speed of the pump, so as to capture the product while maintaining the pumping speed of the exhaust gas.
其中,該冷卻元件包含一中空管螺旋狀環繞於該第一腔體之該腔室中以及一冷凝劑位於該中空管中。Wherein, the cooling element comprises a hollow tube spirally wound in the cavity of the first cavity and a condensing agent is located in the hollow tube.
其中,該冷阱結構之該第一腔體上更設有一觀察窗,用以觀察該第一腔體之該腔室。Wherein, the first cavity of the cold trap structure is further provided with an observation window for observing the chamber of the first cavity.
其中,該水槽更包含一水位計,用以顯示該水溶液之高度。Wherein, the water tank further includes a water level gauge for displaying the height of the aqueous solution.
其中,該尾氣所包含之該製程廢氣為三甲基鋁(TMA),且該產物為氫氧化鋁及/或氧化鋁。Wherein, the process waste gas contained in the tail gas is trimethylaluminum (TMA), and the product is aluminum hydroxide and/or aluminum oxide.
其中,該集塵腔之一底側具有一開口,且該集塵腔具有一集塵盒設於該集塵腔之該底側之該開口上。Wherein, a bottom side of the dust collecting chamber has an opening, and the dust collecting chamber has a dust collecting box arranged on the opening of the bottom side of the dust collecting chamber.
其中,該集塵腔更具有一閥門設於該集塵腔之該底側與該集塵盒之間。Wherein, the dust collecting chamber further has a valve disposed between the bottom side of the dust collecting chamber and the dust collecting box.
其中,該集塵腔為錐形腔。Wherein, the dust collecting chamber is a conical chamber.
其中,該反應腔為豎直狀、傾斜狀或螺旋狀之一中空管柱。Wherein, the reaction chamber is a vertical, inclined or helical hollow column.
其中,該反應腔具有一頸部區。Wherein, the reaction chamber has a neck area.
承上所述,本發明之尾氣滌氣裝置具有以下優點:(1)具有反應腔可使水氣與尾氣進行反應以產生對應之產物。(2)具有冷阱結構可捕集水氣與尾氣反應所產生之產物。(3)具有集塵腔可聚集受離心力甩出及/或受重力掉落之產物。(4)具有集塵盒可聚集產物。(5)具有微波產生器可提供微波,輔助水氣與尾氣之反應,且可提供保持溫度之效果避免水氣過早凝結在管壁上。(6)具有流量控制閥可控制水氣輸送管之水氣供應量以對應於尾氣之流量,可最有效率運用水溶液。(7)具有加熱元件可控制水槽中之水溶液之溫度以對應於尾氣之流量,可最有效率運用水溶液。(8)本發明不僅可以有效處理尾氣,且能降低機械幫浦能源消耗及大幅減少氮氧化物(NOx)等溫室氣體產生量,同時能有效解決固態粒阻塞的問題以提升乾式幫浦使用壽命。Based on the above, the tail gas scrubber of the present invention has the following advantages: (1) It has a reaction chamber to allow water vapor and tail gas to react to produce corresponding products. (2) It has a cold trap structure that can capture the products produced by the reaction of water vapor and tail gas. (3) It has a dust collection chamber that can collect products thrown out by centrifugal force and/or dropped by gravity. (4) It has a dust collection box to collect products. (5) A microwave generator can provide microwaves to assist the reaction of water vapor and exhaust gas, and can provide the effect of maintaining temperature to avoid premature condensation of water vapor on the pipe wall. (6) It has a flow control valve that can control the water and gas supply of the water and gas delivery pipe to correspond to the flow of the exhaust gas, so that the aqueous solution can be used most efficiently. (7) With a heating element, the temperature of the aqueous solution in the water tank can be controlled to correspond to the flow rate of the exhaust gas, and the aqueous solution can be used most efficiently. (8) The present invention can not only effectively treat exhaust gas, but also reduce the energy consumption of mechanical pumps and greatly reduce the production of greenhouse gases such as nitrogen oxides (NOx), and at the same time effectively solve the problem of solid particle blockage to increase the service life of dry pumps .
茲為使鈞審對本發明的技術特徵及所能達到的技術功效有更進一步的瞭解與認識,謹佐以較佳的實施例及配合詳細的說明如後。In order to make Jun Shen have a further understanding and understanding of the technical characteristics of the present invention and the technical effects that can be achieved, the preferred embodiment and detailed description are as follows.
為利瞭解本發明之技術特徵、內容與優點及其所能達成之功效,茲將本發明配合圖式,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本發明實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的權利範圍。此外,為使便於理解,下述實施例中的相同元件係以相同的符號標示來說明。In order to facilitate the understanding of the technical features, content and advantages of the present invention and the effects that can be achieved, the present invention is hereby combined with the drawings and described in detail as follows in the form of embodiments, and the purposes of the drawings used therein are only For the purpose of illustrating and assisting the description, it may not be the true proportion and precise configuration of the present invention after implementation, so the scale and configuration relationship of the attached drawings should not be interpreted to limit the scope of rights of the present invention in actual implementation. In addition, for ease of understanding, the same elements in the following embodiments are described with the same symbols.
另外,在全篇說明書與申請專利範圍所使用的用詞,除有特別註明外,通常具有每個用詞使用在此領域中、在此揭露的內容中與特殊內容中的平常意義。某些用以描述本發明的用詞將於下或在此說明書的別處討論,以提供本領域技術人員在有關本發明的描述上額外的引導。In addition, the terms used in the entire specification and patent claims generally have the ordinary meanings of each term used in this field, in the disclosed content and in the special content, unless otherwise specified. Certain terms used to describe the present invention are discussed below or elsewhere in this specification to provide those skilled in the art with additional guidance in describing the present invention.
關於本文中如使用“第一”、“第二”、“第三”等,並非特別指稱次序或順位的意思,亦非用以限定本發明,其僅僅是為了區別以相同技術用語描述的組件或操作而已。Regarding the use of "first", "second", "third", etc. in this article, it does not specifically refer to the order or order, nor is it used to limit the present invention, but it is only for the purpose of distinguishing components described with the same technical terms or operation only.
其次,在本文中如使用用詞“包含”、“包括”、“具有”、“含有”等,其均為開放性的用語,即意指包含但不限於。Secondly, if the words "comprising", "including", "having", "containing" etc. are used in this article, they are all open terms, meaning including but not limited to.
本發明之尾氣滌氣裝置係適用於利用水氣捕集半導體製程室等尾氣產生源所排放之尾氣,能夠有效捕捉及收集水氣與尾氣反應後所產生之產物,且能適時地觀察並移除上述之產物,還可藉由微波加熱降低反應活化能以及提供維持溫度之效果,而且能避免高溫尾氣遇冷凝結在非預期位置上而導致抽速降低或無法有效捕集尾氣。上述之尾氣係至少包含可與水氣產生反應之製程廢氣,且任何尾氣或其所含之任何製程廢氣只要能夠與水氣產生反應,無論其與水氣反應後之產物為固態、液態、氣態或其組合,均可適用於本發明。The tail gas scrubbing device of the present invention is suitable for using water vapor to capture tail gas discharged from tail gas generation sources such as semiconductor process chambers. It can effectively capture and collect the products produced by the reaction between water vapor and tail gas, and can observe and remove them in a timely manner. In addition to the above-mentioned products, microwave heating can also be used to reduce the activation energy of the reaction and provide the effect of maintaining the temperature. It can also prevent the high-temperature tail gas from condensing and condensing in an unexpected position, resulting in a decrease in pumping speed or failure to effectively capture the tail gas. The above-mentioned tail gas includes at least process waste gas that can react with water vapor, and any tail gas or any process waste gas contained in it can react with water vapor, regardless of whether the product after reacting with water vapor is solid, liquid or gaseous Any combination thereof is applicable to the present invention.
詳言之,水氣與尾氣所含之製程廢氣進行反應所得到之產物係依據尾氣及製程廢氣之種類而定。本發明雖以尾氣所含之製程廢氣為三甲基鋁(TMA)為例,三甲基鋁(TMA)與水氣進行反應所得到之產物為氫氧化鋁及/或氧化鋁之固體顆粒粉塵及甲烷氣體,然而本發明不限於此。依據實際半導體製程之所採用之製程氣體不同,水氣與尾氣所含之製程廢氣進行反應後所得之產物,也可為液體、氣體或其組合,較佳為無毒液體、氣體或其組合。In detail, the products obtained from the reaction between water vapor and the process waste gas contained in the tail gas depend on the types of the tail gas and process waste gas. Although the present invention takes the process waste gas contained in the tail gas as trimethylaluminum (TMA) as an example, the product obtained by reacting trimethylaluminum (TMA) with water gas is solid particle dust of aluminum hydroxide and/or aluminum oxide and methane gas, but the present invention is not limited thereto. Depending on the process gas used in the actual semiconductor manufacturing process, the product obtained after the reaction between water vapor and the process waste gas contained in the tail gas can also be liquid, gas or a combination thereof, preferably a non-toxic liquid, gas or a combination thereof.
本發明之尾氣滌氣裝置係適用於捕集尾氣產生源所排放之尾氣,藉此可在此尾氣被吸入抽氣幫浦之前,預先對此尾氣進行捕捉及收集處理,不僅可達到捕集尾氣之功效,還能在最小影響抽速的情況下維持抽氣幫浦之抽速,盡量避免因捕集尾氣而導致抽速降低。The tail gas scrubbing device of the present invention is suitable for capturing the tail gas discharged from the source of the tail gas, so that the tail gas can be captured and collected in advance before the tail gas is sucked into the suction pump, which can not only capture the tail gas It can also maintain the pumping speed of the pumping pump with minimal impact on the pumping speed, and try to avoid the reduction of pumping speed caused by trapping exhaust gas.
請參閱圖1至圖8,在本發明之第一實施例中,如圖1、圖2及圖4至圖8所示,尾氣滌氣裝置100至少包含水槽10、反應腔30、冷阱結構20及集塵腔40。水槽10係儲存有水溶液12用以產生水氣14,水溶液12係例如藉由沸騰或蒸發等汽化作用而產生水氣14。水槽10具有水氣輸送管11,其中水氣輸送管11之水氣入口11a係位於水槽10中水溶液12之上方,水氣輸送管11之水氣出口11b則係位於反應腔30中。本發明所欲處理之尾氣16係排放自尾氣產生源70,其中尾氣輸送管13係連通於尾氣產生源70及反應腔30之間,藉以將尾氣16從反應腔30之入口輸送至反應腔30之內部。上述之尾氣產生源70並無特別限定,其可例如為半導體製程室或任何可排放尾氣之尾氣來源,因此本發明所適用之尾氣16同樣沒有特別限定,只要尾氣16含有任何能夠與水氣14產生反應之製程廢氣,不論所占比例多寡,均可適用於本發明。Please refer to FIGS. 1 to 8. In the first embodiment of the present invention, as shown in FIGS. 20 and
本發明之一特點在於利用抽氣幫浦60所產生之上述負壓吸力將水氣14與尾氣16輸送至反應腔30中,其中尾氣16至少包含可與水氣14產生一反應之一製程廢氣,藉以使得水氣14接觸尾氣16中之製程廢氣並產生反應而得到至少一產物19。上述之抽氣幫浦60例如但不限於乾式幫浦,且抽氣幫浦60可達到之真空度也無特別限定,其可例如但不限於提供介於0.01 torr至10 torr之間之低壓環境。由於水溶液12之沸點與液面上的蒸氣壓成正比關係,亦即蒸氣壓越小,則沸點越低,因此本發明之另一特點在於利用抽氣幫浦60產生低壓環境能夠有效降低水溶液12之沸點,有助於降低水溶液12汽化成水氣14之沸點溫度,例如但不限於可使水溶液12之沸點溫度降至約攝氏40度以下,較佳為約攝氏30度至40度之間。One of the characteristics of the present invention is to use the above-mentioned negative pressure suction generated by the
如圖2所示,本發明之尾氣滌氣裝置100之冷阱結構20係連接反應腔30。冷阱結構20包含第一腔體22、導入管柱24、導出管26及冷卻元件28,其中,導入管柱24係經由第一腔體22之頂側貫穿式設於第一腔體22之腔室23中且朝著第一腔體22之底側之開口22b之方向延伸,且第一腔體22之腔室23係經由導入管柱24連通至反應腔30。導出管26係設於第一腔體22之排放口22c上,且連通於第一腔體22及抽氣幫浦60之間。冷卻元件28係設於第一腔體22之腔室23上,其可提供冷凝作用,藉以對與水氣反應後之尾氣17以及產物19進行冷凝捕捉處理。並且,冷阱結構20係從第一腔體22之排放口22c排放經過冷凝捕捉處理後之尾氣18。本發明係以冷卻元件28設於第一腔體22之腔室23中且纏繞導入管柱24為例,惟本發明並不限於此,本發明亦可選擇性將冷卻元件28設於導入管柱24之內部或是設於第一腔體22之腔室23之外部上。 換言之,只要冷卻元件28能夠使得第一腔體22及/或導入管柱24形成冷凝表面以進行冷凝捕捉處理,均可適用於本發明。As shown in FIG. 2 , the
詳言之,當抽氣幫浦60進行運作時,本發明之尾氣滌氣裝置100可利用抽氣幫浦60所產生之負壓吸力將水氣14與尾氣16分別經由水氣輸送管11及尾氣輸送管13輸送至反應腔30中,使得水氣14在反應腔30中充分接觸尾氣16,且由於尾氣16至少包含可與水氣14產生一反應之一製程廢氣,即全部或部份之尾氣16為上述之製程廢氣,因此水氣14接觸尾氣16後,就可與尾氣16中之製程廢氣產生反應而得到上述之產物19。而且,藉由抽氣幫浦60所產生之負壓吸力,上述與水氣反應後之尾氣17及反應所得之產物19可繼續經由冷阱結構20之導入管柱24之頂端開口24a進入導入管柱24中,並且從導入管柱24之底端開口24b排出。其中,由於冷卻元件28可在第一腔體22中產生冷凝效果,使得第一腔體22、導入管柱24及冷卻元件28產生冷凝表面,因此能夠對上述尾氣16經過與水氣反應後之尾氣17及上述反應後所產生之產物19進行冷凝捕捉處理,亦即可使得上述之產物19以及與水氣反應後之尾氣17中的部份成分(例如油氣或其他廢氣)吸附並累積在冷阱結構20中的第一腔體22、導入管柱24及/或冷卻元件28之冷凝表面上。最後,上述與水氣反應後之尾氣17再經過冷凝捕捉處理後所形成之尾氣(即經過冷凝捕捉處理後之尾氣18)則會再由第一腔體22之腔室23之底側往上移動並從位在第一腔體22之排放口22c上之導出管26排放出。In detail, when the
若尾氣16所包含可與水氣產生反應之製程廢氣為三甲基鋁(TMA),則三甲基鋁(TMA)能夠與水氣14進行反應,且反應所得之產物19為固體顆粒狀之氫氧化鋁及/或氧化鋁及氣態甲烷,其反應式(1)及(2)分別如下所示:If the process exhaust gas that can react with water vapor contained in the
Al(CH 3) 3+ 3H 2O => Al(OH) 3+ 3CH 4…………..(1) Al(CH 3 ) 3 + 3H 2 O => Al(OH) 3 + 3CH 4 …………..(1)
Al(CH 3) 3+ 3/2H 2O => 1/2Al 2O 3+ 3CH 4………..(2) Al(CH 3 ) 3 + 3/2H 2 O => 1/2Al 2 O 3 + 3CH 4 ………..(2)
藉由上述反應式(1)及(2),本發明可依據三甲基鋁(TMA)之流量換算出每小時所需之耗水量,藉以在保持抽速的情況下,獲得較佳之捕獲效果,且能環保地節省水資源。以流量為1.04 mol/hr之三甲基鋁(TMA)為例,最多需要3.12 mol/hr的耗水量。Through the above reaction formulas (1) and (2), the present invention can convert the required water consumption per hour according to the flow rate of trimethylaluminum (TMA), so as to obtain a better capture effect while maintaining the pumping speed , and can save water resources in an environmentally friendly manner. Taking trimethylaluminum (TMA) with a flow rate of 1.04 mol/hr as an example, a maximum water consumption of 3.12 mol/hr is required.
在本發明之尾氣滌氣裝置100中,冷阱結構20之冷卻元件28並無限定於特定類型,其不限於內冷式或外冷式,只要可提供所需冷凝捕集效果,任何形式之冷卻元件均可適用本發明中。舉例而言,如圖7所示,冷卻元件28包含中空管28a及冷凝劑28b,其中中空管28a係螺旋狀環繞於第一腔體22之腔室23中,且較佳為環繞上述之導入管柱24,藉此不僅可提供冷凝作用,還能作為阻擋產物19往上流動至排放口22c之擋板使用。換言之,本發明之第一腔體22之腔室中還可選擇性增設多個擋板,其係例如分散式分布於第一腔體22之側壁上。冷凝劑28b則係位於中空管28a中,冷凝劑28b可例如為冰鹽水、液態氮或乙二醇等可提供降溫效果之流體,且可例如從中空管28a之入口埠29a導入至中空管28a中並從出口埠29b導出。In the tail
由於尾氣16接觸水氣14時會產生反應而形成產物19,例如固態顆粒狀之氫氧化鋁及/或氧化鋁及氣態之甲烷,其中大部分之固態顆粒狀之氫氧化鋁及/或氧化鋁會受重力影響而直接掉落,另一部分之氫氧化鋁及/或氧化鋁以及甲烷則會吸附在冷阱結構20之內部之冷卻表面上,然而當產物19持續吸附在冷阱結構20之冷卻表面,例如第一腔體22之腔室23、導入管柱24及冷卻元件28之表面上時,過多的產物19終究會受到重力影響而掉落。此外,經過冷凝捕捉處理後之尾氣18會從第一腔體22之底側轉向後再往上飄,因此如有產物19伴隨尾氣18轉向,則會受到離心力影響而甩出。因此,本發明之另一特色在於在收集到的產物中,掉落至第一腔體22之底側之氫氧化鋁及/或氧化鋁約佔大部分(約90%至95%),僅有少部分(約10%至5%)之氫氧化鋁及/或氧化鋁以及無毒性之氣態甲烷會伴隨著尾氣(即經過冷凝捕捉處理後之尾氣18)從第一腔體22之底側轉向後再往上飄,並冷凝附著在冷卻元件28或第一腔體22之表面上。所以,本發明之尾氣滌氣裝置100增設有集塵腔40,其中集塵腔40係設於冷阱結構20之第一腔體22之底側上,且集塵腔40之頂側具有開口以經由第一腔體22之底側上之開口22b連通至第一腔體22之腔室23,用以聚集從第一腔體22中受離心力甩出及/或受重力掉落之產物19。Since
為了獲得較佳之收集效果,集塵腔40之輪廓較佳為上寬下窄之錐形腔,但不限於此。集塵腔40之底側亦可具有開口,且集塵腔40之底側之開口處還可選擇性增設有集塵盒42,藉此可收集從第一腔體22中受重力掉落之上述產物,其中集塵盒42較佳為可拆卸式設於集塵腔40之底側,以便清理集塵盒42所收集之產物19,且可例如但不限於採用雙抓式卡鉗。此外,如圖1至圖3所示,集塵腔44與集塵盒42之間或可選擇性設有閥門(41),藉以控制集塵腔40之底側之開口之啟閉。舉例而言,當清理集塵盒42所收集之產物19時,可藉由關閉此閥門以暫時閉合集塵腔40之底側之開口,故在清理所捕獲之產物19時,不需要暫時中斷尾氣處理程序。In order to obtain a better collection effect, the contour of the
在本發明之第二實施例中,如圖1及圖3至圖8所示,除了上述第一實施例所示之結構外,本發明之尾氣滌氣裝置100更包含微波產生器50設於反應腔30上,藉以提供微波輔助水氣14與尾氣16進行反應而產生上述之產物19。詳言之,如圖5所示,本發明之微波產生器50更包含微波產生源54及波導管56,其中微波產生源54係用以產生微波且經由波導管56將此微波導入上述之反應腔30中,藉以利用微波輔助水氣14與尾氣16之混合並輔助反應而產生對應之產物19。其中,微波產生源54及波導管56係設於反應腔30上,且係例如橫向穿設於反應腔30上,藉以在反應腔30中產生微波。上述之微波產生源54例如為磁控管,且波導管56例如為設於磁控管之天線輸出端上,用以將微波產生源54所產生之微波導引至反應腔30之內部。其中,波導管56之結構可例如,但不限於,包含金屬桿56a及以一間距包圍金屬桿56a之石英管56b。此外,波導管56還可具有一微波匹配器56c橫向連接上述之金屬桿56a,用以調整微波之反射量,藉以有效地將微波導入反應腔30中。本發明所產生之微波頻率及波長範圍並無特別限定,其可例如為一般家庭微波爐常用之2.45GHz及12.24cm,或為其他數值,只要可用以輔助水氣14與尾氣16產生反應,即可適用於本發明。In the second embodiment of the present invention, as shown in Fig. 1 and Fig. 3 to Fig. 8, in addition to the structure shown in the above-mentioned first embodiment, the tail
在本發明之第一實施例及第二實施例中,反應腔30可例如為中空管柱,其中反應腔30之管徑從頂側至底側可為相同(即同徑管)或不相同(即非同徑管)。此外,此反應腔30之輪廓不限於豎直狀,其也可例如為螺旋狀,藉以在反應腔30中產生渦漩氣流,或者是為傾斜狀,藉以在冷阱結構20之第一腔體22中產生渦漩氣流,可藉由離心力有效將產物19集中在集塵腔40中,防止產物19從排放口22c排出。除此之外,如圖4至圖6所示,此反應腔30之內部還可選擇性具有頸部區32,其中頸部區32之管徑小於其他區域。舉例而言,反應腔30可例如為由頂側及底側分別往中間段逐漸減縮管徑而形成頸部區32之中空管柱。其中,微波產生源54所產生之微波係例如經由波導管56導入反應腔30之頸部區32之下方區域。而且,依據流體力學,此頸部區32還有助於驅使反應所得之產物19快速離開反應腔30。同理,導入管柱24也可例如為中空管柱,其中導入管柱24之中空管柱之管徑從頂側至底側可為相同(即同徑管)或不相同(即非同徑管)。而且,本發明之導入管柱24係以呈豎直狀且為同徑管之中空管柱為例,然而本發明之導入管柱24之輪廓不限於豎直狀,其也可例如為螺旋狀,藉以在導入管柱24中產生渦漩氣流,或者是為傾斜狀,藉以在第一腔體22及/或導入管柱24中產生渦漩氣流,可藉由離心力有效將產物19集中在集塵腔40中,防止固體顆粒之產物19從排放口22c排出。本發明之冷阱結構20還可選擇性具有振動器設於第一腔體22、導入管柱24及/或冷卻元件28上,其中當尾氣之抽速下降或尾氣捕捉效果下降時,外部之一控制器可例如接收到偵測器之感測訊號,並藉以產生一運作指令,藉此振動器可依據此運作指令產生振動以抖落第一腔體22、導入管柱24及/或冷卻元件28上吸附的產物19,藉以恢復原有的抽速或捕捉效果。此外,本發明雖以反應腔30及第一腔體22為獨立構件舉例,惟本發明不限於此,本發明之反應腔30亦可與第一腔體22整合成一體。In the first embodiment and the second embodiment of the present invention, the
除此之外,本發明所採用之水氣輸送管11較佳為具有至少一流量控制閥15,且流量控制閥15可藉由控制開啟角度以調整水氣14經由水氣輸送管11輸送至反應腔30之內部之量。而且,流量控制閥15之一開啟角度係對應於尾氣16中之製程廢氣之流量,亦即若尾氣16中之製程廢氣之流量增加,則流量控制閥15之開啟角度則增大,藉以提供較多之水氣14。換言之,本發明可依據欲處理之尾氣16中之製程廢氣之流量,而對應地採用合適之流量控制閥15之開啟角度,例如介於75度至90度之間,且較佳為約75度(其中,0度代表閥門關閉),藉此不僅可在維持尾氣抽速的情況下,獲得較佳之捕獲效果,且能環保地節省水資源。例如,當製程廢氣為三甲基鋁,且三甲基鋁之流量約為75g/hr,抽速約介於24,000L/s至25,160L/s時,本發明可將水溶液之使用量控制在75g/hr~135g/hr之間,且其總捕獲率可達到39%。其中,流量控制閥15可例如為手動球閥15a及/或氣動閥15b。同理,在本發明中,冷阱結構20之第一腔體22之管徑及長度係對應於抽氣幫浦60之抽速,亦即管徑越大,則可達到之抽速較高,長度越長,則可達到之抽速較低。因此,本發明也可依據抽氣幫浦60之抽速,而對應地採用具有合適管徑及長度之第一腔體22,藉此可在維持尾氣抽速的情況下,獲得較佳之捕獲效果,例如捕獲率可高達39.9%。換言之,本發明還可選擇性將多個尾氣滌氣裝置100以串聯、並聯或其組合方式連接,藉此可有效提高捕獲率。以串聯為例,前一個尾氣滌氣裝置100之導出管26係連接後一個尾氣滌氣裝置100之反應腔30之入口,依此類推。以並聯為例,多個尾氣滌氣裝置100之反應腔30之入口係共同連接尾氣產生源70,而其導出管26則共同連接抽氣幫浦60。In addition, the water-
此外,由於本發明係利用水溶液12之沸騰或蒸發等汽化作用而形成水氣14,且較佳為可藉由低壓環境加速使水溶液12汽化形成水氣14,因此冷阱結構20之第一腔體22之排放口22c係連通至可產生上述之負壓吸力之抽氣幫浦60。此外,上述之水槽10還可選擇性設有加熱元件62,其例如為液體加熱用護套加熱器,用以將水槽10中之水溶液12加熱至預設溫度,此預設溫度例如為約攝氏40度以下,較佳為約攝氏30度至40度之間。而且,此預設溫度較佳為對應於尾氣16中之製程廢氣之流量,亦即若尾氣16中之製程廢氣之流量較高,則預設溫度之數值也較高,藉此可提供較多之水氣。基於相同理由,上述之水槽10可選擇性設有溫度感測器64及溫度調節器66,其中溫度感測器64例如為電熱偶,用以偵測水溶液12之溫度,且溫度調節器66可接收溫度感測器64之感測訊號並控制加熱元件62之運作,藉以使得水溶液12之溫度達到上述之預設溫度並維持在此預設溫度。In addition, since the present invention uses vaporization such as boiling or evaporation of the
此外,上述之水槽10還可選擇性設有通氣管件67,其出口位於水槽10中,且具有通氣閥可用以選擇性平衡水槽10/反應腔30與外部環境的壓力,亦即所謂的破真空。此外,本發明還可選擇性經由此通氣管件67通入氮氣,藉以平衡水槽10/反應腔30與外部環境的壓力,還可藉由氮氣提供稀釋作用防止維修時或處理過程中產物19中的氣體可能產生的燃燒現象。其中,上述之水槽10還選擇性包含可用以顯示水溶液之液面高度之水位計68,其中水位計68係例如為兩端分別連通至水槽10之內部之透明觀察管,其係利用連通管原理使得水槽10之內部之水溶液12之高度相同於透明觀察管中之水溶液12之高度,故可用以觀察水溶液12之液面高度。而且,本發明還加大透明觀察管之管徑,且較佳使其管徑約大於25mm,藉此可避免水溶液12沸騰時所產生之氣泡堵塞上述之透明觀察管而造成假水位現象,影響水位判斷。此外,由於水氣14與尾氣16反應所產生之產物19為粉塵狀之固體顆粒,因此為了即時觀察冷阱結構20是否被產物19堵塞,本發明之冷阱結構20之第一腔體22之腔壁上更可選擇性設有觀察窗69,可供使用者即時觀察第一腔體22之腔室23之狀態。此外,上述之水槽10之槽體10a可具有固定式或可拆卸式蓋體10b,且其槽底可選擇性增設具有水閥之排水管路10c,用以選擇性排出水槽10中之水溶液。In addition, the above-mentioned
綜上所述,本發明之尾氣滌氣裝置具有以下優點:(1)具有反應腔可使水氣與尾氣進行反應以產生對應之產物。(2)具有冷阱結構可捕集水氣與尾氣反應所產生之產物。(3)具有集塵腔可聚集受離心力甩出及/或受重力掉落之產物。(4)具有集塵盒可聚集產物。(5)具有微波產生器可提供微波輔助水氣與尾氣之反應,且可提供保持溫度之效果避免水氣過早凝結在管壁上。(6)具有流量控制閥可控制水氣輸送管之水氣供應量以對應於尾氣之流量,可最有效率運用水溶液。(7)具有加熱元件可控制水槽中之水溶液之溫度以對應於尾氣之流量,可最有效率運用水溶液。(8)本發明不僅可以有效處理尾氣,且能降低機械幫浦能源消耗及大幅減少氮氧化物(NOx)等溫室氣體產生量,同時能有效解決固態粒阻塞的問題以提升乾式幫浦使用壽命。To sum up, the tail gas scrubber of the present invention has the following advantages: (1) It has a reaction chamber to allow water vapor and tail gas to react to produce corresponding products. (2) It has a cold trap structure that can capture the products produced by the reaction of water vapor and tail gas. (3) It has a dust collection chamber that can collect products thrown out by centrifugal force and/or dropped by gravity. (4) It has a dust collection box to collect products. (5) A microwave generator can provide microwaves to assist the reaction of water vapor and exhaust gas, and can provide the effect of maintaining temperature to avoid premature condensation of water vapor on the pipe wall. (6) It has a flow control valve that can control the water and gas supply of the water and gas delivery pipe to correspond to the flow of the exhaust gas, so that the aqueous solution can be used most efficiently. (7) With a heating element, the temperature of the aqueous solution in the water tank can be controlled to correspond to the flow rate of the exhaust gas, and the aqueous solution can be used most efficiently. (8) The present invention can not only effectively treat exhaust gas, but also reduce the energy consumption of mechanical pumps and greatly reduce the production of greenhouse gases such as nitrogen oxides (NOx), and at the same time effectively solve the problem of solid particle blockage to increase the service life of dry pumps .
以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。The above descriptions are illustrative only, not restrictive. Any equivalent modification or change made without departing from the spirit and scope of the present invention shall be included in the scope of the appended patent application.
圖1為本發明之尾氣滌氣裝置應用於尾氣產生源及抽氣幫浦之間之示意圖。Fig. 1 is a schematic diagram of the exhaust gas scrubbing device of the present invention applied between the exhaust gas generation source and the exhaust pump.
圖2為本發明之第一實施例之尾氣滌氣裝置之側視示意圖。Fig. 2 is a schematic side view of the tail gas scrubbing device of the first embodiment of the present invention.
圖3為本發明之第二實施例之尾氣滌氣裝置之側視示意圖。Fig. 3 is a schematic side view of the tail gas scrubbing device of the second embodiment of the present invention.
圖4為本發明之尾氣滌氣裝置之反應腔增設微處理裝置之立體示意圖。4 is a three-dimensional schematic diagram of adding a micro-processing device to the reaction chamber of the tail gas scrubbing device of the present invention.
圖5為圖4所示之反應腔之剖面示意圖。FIG. 5 is a schematic cross-sectional view of the reaction chamber shown in FIG. 4 .
圖6為圖4所示之反應腔之上視示意圖。FIG. 6 is a schematic top view of the reaction chamber shown in FIG. 4 .
圖7為本發明之尾氣滌氣裝置之冷阱結構之剖面示意圖。Fig. 7 is a schematic cross-sectional view of the cold trap structure of the tail gas scrubbing device of the present invention.
圖8為本發明之尾氣滌氣裝置之冷阱結構之立體示意圖。Fig. 8 is a three-dimensional schematic view of the cold trap structure of the tail gas scrubbing device of the present invention.
10:水槽 10: Sink
13:尾氣輸送管 13: Exhaust gas delivery pipe
20:冷阱結構 20: Cold trap structure
22:第一腔體 22: The first cavity
26:導出管 26: Export pipe
30:反應腔 30: reaction chamber
40:集塵腔 40: Dust collection chamber
42:集塵盒 42: Dust box
50:微波產生器 50:Microwave generator
60:抽氣幫浦 60:Exhaust pump
70:尾氣產生源 70: Exhaust gas generation source
100:尾氣滌氣裝置 100: Tail gas scrubber
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