TW202319833A - Method of manufacturing photomask blank and method of manufacturing photomask do not easily produce edge roughness at edge of pattern in photomask - Google Patents

Method of manufacturing photomask blank and method of manufacturing photomask do not easily produce edge roughness at edge of pattern in photomask Download PDF

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TW202319833A
TW202319833A TW111140620A TW111140620A TW202319833A TW 202319833 A TW202319833 A TW 202319833A TW 111140620 A TW111140620 A TW 111140620A TW 111140620 A TW111140620 A TW 111140620A TW 202319833 A TW202319833 A TW 202319833A
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film
functional film
manufacturing
photomask blank
etching
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TW111140620A
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TWI838928B (en
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山田慎吾
森山久美子
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日商Ｓｋ電子股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

A problem to be solved in the invention is to provide a method of manufacturing photomask blank and a method of manufacturing photomask. The dimensional control of patterns can be easily carried out while manufacturing the photomask and the dimensional accuracy of the pattern in the photomask can be improved. The method of manufacturing photomask blank is used to manufacture the photomask blank to divide the surface of a transparent substrate into a first pattern area and a second pattern area. A first functional film is formed at the first pattern area while a second functional film is formed at the second pattern area.

Description

光罩坯料的製造方法以及光罩的製造方法Method for manufacturing photomask blank and method for manufacturing photomask

本發明關於一種光罩坯料的製造方法以及光罩的製造方法。 The invention relates to a method for manufacturing a photomask blank and a method for manufacturing a photomask.

作為微影技術，已知有相移遮罩、半色調遮罩。相移遮罩是在透明基板的一部分具備相移膜，具有藉由改變通過該部分的光的相位、強度，來提高解析度的功能、改善焦深（DOF）的功能的光罩。半色調遮罩是在透明基板的一部分上具備半色調膜，具有藉由改變通過該部分的光的強度而實現三灰階以上的多灰階功能的光罩。As lithography techniques, phase shift masks and halftone masks are known. A phase shift mask is a mask that has a phase shift film on a part of the transparent substrate, and has the function of improving the resolution and improving the depth of focus (DOF) by changing the phase and intensity of the light passing through this part. A halftone mask is a mask that has a halftone film on a part of a transparent substrate, and has a multi-grayscale function of more than three grayscales by changing the intensity of light passing through this part.

這種光罩經過如下步驟製造：i）準備在透明基板之上形成有遮光膜之光罩坯料的步驟；ii）在遮光膜上形成抗蝕劑膜的步驟；iii）在抗蝕劑膜上描繪規定的抗蝕劑圖案，藉由顯影去除不需要的抗蝕劑膜，形成規定的抗蝕劑圖案的步驟；iv）將抗蝕劑圖案作為遮罩，藉由蝕刻去除遮光膜的露出部分的步驟；v）去除殘存的抗蝕劑膜的步驟；vi）在去除了遮光膜之透明基板的露出部分以及遮光膜上形成相移膜或半色調膜的步驟；vii）在相移膜或者半色調膜上形成抗蝕劑膜的步驟；viii）在抗蝕劑膜上描繪規定的抗蝕劑圖案，藉由顯影去除不需要的抗蝕劑膜，形成規定的抗蝕劑圖案的步驟；ix）將抗蝕劑圖案作為遮罩，藉由蝕刻去除相移膜或半色調膜的露出部分以及遮光膜的露出部分的步驟；x）去除殘存的抗蝕劑膜的步驟。例如，在專利文獻1中，作為步驟vi），記載了形成半色調膜之光罩的製造方法。 [先前技術文獻] (專利文獻) This photomask is manufactured through the following steps: i) a step of preparing a photomask blank with a light-shielding film formed on a transparent substrate; ii) a step of forming a resist film on the light-shielding film; iii) a step of forming a resist film on the resist film The step of drawing a prescribed resist pattern, removing unnecessary resist film by development, and forming a prescribed resist pattern; iv) using the resist pattern as a mask, and removing the exposed part of the light-shielding film by etching v) a step of removing the remaining resist film; vi) a step of forming a phase shift film or a halftone film on the exposed portion of the transparent substrate from which the light shielding film has been removed and the light shielding film; vii) on the phase shift film or A step of forming a resist film on a halftone film; viii) a step of drawing a prescribed resist pattern on the resist film, removing unnecessary resist film by developing, and forming a prescribed resist pattern; ix) a step of removing the exposed portion of the phase shift film or the halftone film and the exposed portion of the light-shielding film by etching using the resist pattern as a mask; x) the step of removing the remaining resist film. For example, Patent Document 1 describes, as step vi), a method of manufacturing a photomask in which a halftone film is formed. [Prior Art Literature] (patent documents)

專利文獻1：日本特開2005-257712號公報Patent Document 1: Japanese Patent Laid-Open No. 2005-257712

[發明所欲解決的問題] 根據上述以往的光罩的製造方法，遮光部由遮光膜和相移膜或半色調膜的層疊部構成。因此，在對遮光部進行圖案化時，需要對相移膜或半色調膜和遮光膜這兩者進行蝕刻。但是，在兩者的蝕刻速率不同的情況下，在相移膜或半色調膜和遮光膜之間，側蝕刻量產生差異。其結果是，在遮光部的邊緣產生邊緣粗糙，而難以按照預期對遮光部的尺寸精度（遮光部相對於透射部的邊緣位置精度）進行精加工。此外，由於是層疊部，所以蝕刻時間有時也比單層的情況長，而使遮光部的尺寸控制（遮光部相對於透射部的邊緣位置控制（CD（Critical Dimension：臨界尺寸）控制）變得困難。 [Problem to be solved by the invention] According to the manufacturing method of the conventional photomask mentioned above, a light-shielding part is comprised from the lamination part of a light-shielding film and a phase shift film or a halftone film. Therefore, when patterning the light shielding portion, it is necessary to etch both the phase shift film or the halftone film and the light shielding film. However, when both etching rates are different, a difference occurs in the amount of side etching between the phase shift film or the halftone film and the light shielding film. As a result, edge roughness occurs at the edge of the light-shielding portion, making it difficult to finish the expected dimensional accuracy of the light-shielding portion (edge position accuracy of the light-shielding portion with respect to the transmissive portion). In addition, since it is a laminated part, the etching time may be longer than that of a single layer, and the size control of the light-shielding part (control of the edge position of the light-shielding part relative to the transmissive part (CD (Critical Dimension: Critical Dimension) control) becomes difficult. Difficult to get.

因此，本發明是鑒於上述情況而完成的，其所欲解決的問題在於提供一種光罩坯料的製造方法以及光罩的製造方法，在光罩的製造時容易進行圖案的尺寸控制，並能夠在光罩中提高圖案的尺寸精度。 [用以解決問題之手段] Therefore, the present invention is accomplished in view of the above-mentioned circumstances, and the problem to be solved is to provide a method for manufacturing a photomask blank and a method for manufacturing a photomask, which can easily control the size of the pattern during the manufacture of the photomask, and can Improve the dimensional accuracy of the pattern in the mask. [means used to solve problems]

本發明的光罩坯料的製造方法，是將透明基板的表面劃分為第一圖案區域和第二圖案區域，在第一圖案區域形成有第一功能性膜，在第二圖案區域形成有第二功能性膜，該光罩坯料的製造方法，包括： 光罩坯料準備步驟，準備在透明基板之上形成有第一功能性膜之第一次光罩坯料； 第一圖案化步驟，以與第一圖案區域對應的圖案對第一功能性膜進行圖案化，去除第二圖案區域中的第一功能性膜； 功能性膜形成步驟，在去除了第一功能性膜之透明基板的露出部分以及第一功能性膜之上形成第二功能性膜；及， 第二圖案化步驟，以與第二圖案區域對應的圖案對第二功能性膜進行圖案化，去除第一圖案區域中的第二功能性膜。 The manufacturing method of the photomask blank of the present invention is to divide the surface of the transparent substrate into a first pattern area and a second pattern area, a first functional film is formed in the first pattern area, and a second pattern area is formed in the second pattern area. The functional film, the manufacturing method of the photomask blank, comprises: A photomask blank preparation step, preparing the first photomask blank with the first functional film formed on the transparent substrate; A first patterning step, patterning the first functional film with a pattern corresponding to the first pattern area, and removing the first functional film in the second pattern area; a functional film forming step of forming a second functional film on the exposed portion of the transparent substrate from which the first functional film is removed and the first functional film; and, In the second patterning step, the second functional film is patterned in a pattern corresponding to the second pattern area, and the second functional film in the first pattern area is removed.

在此，作為本發明的光罩坯料的製造方法的一種實施方式，可以採用如下構成： 第二圖案化步驟包括：抗蝕劑膜形成步驟，在第二功能性膜之上形成抗蝕劑膜； 抗蝕劑圖案形成步驟，藉由將抗蝕劑圖案的邊緣位置向外偏移，而形成以規定的重疊量在第一功能性膜以及第二功能性膜的層疊部的邊緣部進行重疊的抗蝕劑圖案，該抗蝕劑圖案與第二圖案區域對應；及， 蝕刻步驟，將抗蝕劑圖案作為遮罩，藉由蝕刻去除第二功能性膜在第一圖案區域中的露出部分。 Here, as an embodiment of the manufacturing method of the photomask blank of the present invention, the following configuration can be adopted: The second patterning step includes: a resist film forming step, forming a resist film on the second functional film; In the resist pattern forming step, by shifting the edge position of the resist pattern outward, a predetermined overlapping amount is formed to overlap the edge portion of the laminated portion of the first functional film and the second functional film. a resist pattern corresponding to the second pattern area; and, In the etching step, using the resist pattern as a mask, the exposed part of the second functional film in the first pattern area is removed by etching.

這種情況下，可以採用如下的構成： 還包括：精加工步驟，去除由於規定的重疊量的重疊而殘留的第二功能性膜的殘渣。 In this case, the following composition can be adopted: It further includes: a finishing step of removing residues of the second functional film remaining due to overlapping by a predetermined overlapping amount.

此外，作為本發明的光罩坯料的製造方法的其他實施方式，可以採用如下構成： 作為第一次光罩坯料，使用一種光罩坯料，在透明基板之上形成有第一功能性膜且在第一功能性膜之上形成有具有與第一功能性膜不同的蝕刻特性的中間膜； 作為第二功能性膜，使用具有與第一功能性膜相同的蝕刻特性的膜。 In addition, as another embodiment of the manufacturing method of the photomask blank of this invention, the following structure can be adopted: As the first photomask blank, a photomask blank is used in which a first functional film is formed on a transparent substrate and an intermediate layer having an etching characteristic different from that of the first functional film is formed on the first functional film. membrane; As the second functional film, a film having the same etching characteristics as the first functional film is used.

這種情況下，可以採用如下的構成： 作為第一功能性膜以及第二功能性膜，使用選自Cr(鉻)類、Ni(鎳)類、Ti(鈦)類、Si(矽)類、金屬矽化物類、以及調整了氮含量之金屬之中的材質的膜。 In this case, the following composition can be adopted: As the first functional film and the second functional film, use selected from Cr (chromium) type, Ni (nickel) type, Ti (titanium) type, Si (silicon) type, metal silicide type, and adjusted nitrogen content The film of the material among the metals.

此外，作為本發明的光罩坯料的製造方法的其他實施方式，可以採用如下構成： 作為第一次光罩坯料，使用在透明基板之上形成有第一功能性膜之光罩坯料； 作為第二功能性膜，使用具有與第一功能性膜不同的蝕刻特性的膜。 In addition, as another embodiment of the manufacturing method of the photomask blank of this invention, the following structure can be adopted: As the first photomask blank, a photomask blank with the first functional film formed on the transparent substrate is used; As the second functional film, a film having an etching characteristic different from that of the first functional film is used.

此外，作為本發明的光罩坯料的製造方法的進一步的其他實施方式，可以採用如下構成： 作為第一功能性膜，使用具有調整曝光光源的光學特性的功能的膜； 作為第二功能性膜，使用具有調整曝光光源的光學特性的功能且功能和第一功能性膜不同的膜。 In addition, as a further other embodiment of the manufacturing method of the photomask blank of the present invention, the following configuration can be adopted: As the first functional film, a film having a function of adjusting the optical characteristics of the exposure light source is used; As the second functional film, a film having a function of adjusting the optical characteristics of the exposure light source and having a function different from that of the first functional film is used.

這種情況下，可以採用如下的構成： 作為第一功能性膜和第二功能性膜的任意一者，使用相移膜或者半色調膜； 作為第一功能性膜或者第二功能性膜的任意另一者，使用遮光膜。 In this case, the following composition can be adopted: As any one of the first functional film and the second functional film, a phase shift film or a halftone film is used; A light-shielding film is used as either the first functional film or the second functional film.

此外，作為本發明的光罩坯料的製造方法的進一步的其他實施方式，可以採用如下構成： 調整第一功能性膜和第二功能性膜的任意一者或兩者，使其蝕刻速率與第一功能性膜或者第二功能性膜的任意另一者相同。 In addition, as a further other embodiment of the manufacturing method of the photomask blank of the present invention, the following configuration can be adopted: Either one or both of the first functional film and the second functional film is adjusted to have the same etching rate as the other one of the first functional film or the second functional film.

此外，本發明的光罩的製造方法，包括： 光罩坯料準備步驟，準備藉由上述任一項的光罩坯料的製造方法所製造的光罩坯料；及， 圖案化步驟，以規定的圖案對第一功能性膜以及第二功能性膜進行圖案化。 In addition, the manufacturing method of the photomask of the present invention includes: A photomask blank preparation step, preparing a photomask blank manufactured by any one of the above photomask blank manufacturing methods; and, In the patterning step, the first functional film and the second functional film are patterned in a predetermined pattern.

在此，作為本發明的光罩的製造方法的一種實施方式，可以採用如下構成： 圖案化步驟包括僅一次的描繪步驟。 Here, as an embodiment of the manufacturing method of the photomask of the present invention, the following configuration can be adopted: The patterning step includes only one drawing step.

此外，作為本發明的光罩的製造方法的其他實施方式，可以採用如下構成： 圖案化步驟包括： 抗蝕劑膜形成步驟，在光罩坯料的表面形成抗蝕劑膜； 抗蝕劑圖案形成步驟，形成考慮了第一功能性膜以及第二功能性膜的蝕刻速率的差異的抗蝕劑圖案，該抗蝕劑圖案為規定的圖案的抗蝕劑圖案；及， 蝕刻步驟，將抗蝕劑圖案作為遮罩，藉由蝕刻去除第一功能性膜以及第二功能性膜的露出部分。 (發明之效果) In addition, as another embodiment of the manufacturing method of the photomask of the present invention, the following configuration can be adopted: The patterning steps include: A resist film forming step, forming a resist film on the surface of the photomask blank; a resist pattern forming step of forming a resist pattern in consideration of a difference in etching rates between the first functional film and the second functional film, the resist pattern being a resist pattern of a predetermined pattern; and, In the etching step, using the resist pattern as a mask, the exposed parts of the first functional film and the second functional film are removed by etching. (Effect of Invention)

根據本發明，可製造一種複合型光罩坯料，在透明基板上以第一功能性膜和第二功能性膜彼此邊緣相接並同一平面狀地排列的方式形成。在該光罩坯料中，不存在第一功能性膜以及第二功能性膜的實質上的層疊部，光罩的圖案邊緣分別被規定在實質上為單層的第一功能性膜和第二功能性膜上。這意味著在光罩的圖案的邊緣不容易產生邊緣粗糙，而且蝕刻時間變短。因此，根據本發明，在光罩的製造時容易進行圖案的尺寸控制，能夠在光罩中提高圖案的尺寸精度。According to the present invention, it is possible to manufacture a composite photomask blank in which the first functional film and the second functional film are formed on a transparent substrate so that their edges are in contact with each other and aligned in the same plane. In this photomask blank, there is no substantial lamination of the first functional film and the second functional film, and the pattern edges of the photomask are respectively defined by the first functional film and the second functional film, which are substantially single layers. functional film. This means that edge roughness is less likely to occur at the edge of the pattern of the mask, and the etching time is shortened. Therefore, according to the present invention, the dimensional control of the pattern can be easily performed at the time of manufacture of the photomask, and the dimensional accuracy of the pattern can be improved in the photomask.

＜光罩的結構＞ 首先，對本發明的一個實施方式的光罩的結構進行說明。 ＜Structure of photomask＞ First, the structure of the photomask which concerns on one Embodiment of this invention is demonstrated.

如圖1所示，光罩1是具備透射部（空白部分）、半透射部（陰影部分）及遮光部（塗黑部分）之3灰階的多灰階光罩。透射部由透明基板3構成，半透射部由半透膜4構成，遮光部由遮光膜5構成。即，透明基板3的沒有層疊半透膜4以及遮光膜5的露出部分為透射部，在透明基板3上層疊半透膜4的部分為半透射部，在透明基板3上層疊遮光膜5的部分為遮光部。As shown in FIG. 1 , the mask 1 is a three-tone multi-tone mask including a transmissive portion (blank portion), a semi-transmissive portion (shaded portion), and a light shielding portion (blackened portion). The transmissive part is composed of a transparent substrate 3 , the semi-transmissive part is composed of a semi-permeable film 4 , and the light-shielding part is composed of a light-shielding film 5 . That is, the exposed part of the transparent substrate 3 where the semi-permeable film 4 and the light-shielding film 5 are not laminated is a transmissive part, the part where the semi-permeable film 4 is laminated on the transparent substrate 3 is a semi-transmissive part, and the part where the light-shielding film 5 is laminated on the transparent substrate 3 is a transmissive part. The part is a shading part.

半透射部以規定形狀（在本實施方式中為矩形）的單位要素（島）彼此具有規定間隔地進行二維排列的島圖案的形態形成。遮光部形成為填埋半透射部的區域以外的區域。透射部以孔圖案7的形態形成，該孔圖案7以規定形狀（在本實施方式中為矩形）的單位要素（孔7A、7B）彼此具有規定間隔，並且分別處於半透射部的區域以及遮光部的區域內的方式進行二維排列。The semi-transmissive portion is formed in the form of an island pattern in which unit elements (islands) of a predetermined shape (rectangular in this embodiment) are two-dimensionally arranged at predetermined intervals. The light-shielding portion is formed to fill a region other than the region where the semi-transmissive portion is buried. The transmissive part is formed in the form of a hole pattern 7 in which unit elements (holes 7A, 7B) of a predetermined shape (rectangular in this embodiment) have predetermined intervals from each other, and are located in the region of the semi-transmissive part and the light-shielding part, respectively. A two-dimensional array is performed in a manner within the region of the section.

透明基板3是合成石英玻璃等的基板。透明基板3相對於在使用了光罩1的曝光步驟中使用的曝光光源所包含的代表波長（例如i線、h線或g線）具有95%以上的透射率。另外，曝光光源例如可以是i線、h線或g線，或者也可以是包含它們中的至少兩種光的混合光。或者，曝光光源也可以是相對於這些光，波段向短波長側和/或長波長側移位或者擴展的光。作為一個例子，曝光光源的波段可適用從365nm～436nm的頻寬擴展到300nm～450nm的光。但是，曝光光源並不限定於此。The transparent substrate 3 is a substrate of synthetic quartz glass or the like. The transparent substrate 3 has a transmittance of 95% or more with respect to representative wavelengths (for example, i-line, h-line, or g-line) included in the exposure light source used in the exposure step using the photomask 1 . In addition, the exposure light source may be, for example, i-line, h-line, or g-line, or mixed light including at least two of them. Alternatively, the exposure light source may be light whose wavelength band is shifted or extended to the short-wavelength side and/or long-wavelength side with respect to these lights. As an example, the wavelength band of the exposure light source can be applied to light that extends from a bandwidth of 365nm to 436nm to 300nm to 450nm. However, the exposure light source is not limited to this.

半透膜4使用：Cr或Cr類化合物、Ni或Ni類化合物、Ti或Ti類化合物、Si類化合物、金屬矽化物化合物等公知材質中的Cr類材質。在本實施方式中，半透膜4使用Cr類化合物。半透膜4是相移膜。或者，半透膜4也可以是半色調膜。半透膜4被設定為，相對於曝光光源中所包含的代表波長具有比透明基板3的透射率低、比遮光膜5的透射率高的透射率，相對於代表波長為5%～70%的透射率。另外，半透膜4也可以是藉由調整氮含量來改善光罩1的面內的透射率分佈的半透射型金屬膜。此外，藉由使半透膜4含有其它元素，可改變半透射部的光密度（OD值）。半透膜4藉由濺射法、蒸鍍法等在透明基板3上成膜。The semipermeable membrane 4 is made of Cr-based materials among known materials such as Cr or Cr-based compounds, Ni or Ni-based compounds, Ti or Ti-based compounds, Si-based compounds, and metal silicide compounds. In this embodiment, a Cr-based compound is used for the semipermeable membrane 4 . The semipermeable membrane 4 is a phase shift membrane. Alternatively, the semipermeable membrane 4 may also be a halftone membrane. The semi-permeable film 4 is set to have a transmittance lower than the transmittance of the transparent substrate 3 and higher than that of the light-shielding film 5 with respect to the representative wavelength included in the exposure light source, and is 5% to 70% with respect to the representative wavelength. transmittance. In addition, the semi-transmissive film 4 may also be a semi-transmissive metal film that improves the in-plane transmittance distribution of the photomask 1 by adjusting the nitrogen content. In addition, by making the semi-transmissive film 4 contain other elements, the optical density (OD value) of the semi-transmissive portion can be changed. The semipermeable film 4 is formed on the transparent substrate 3 by a sputtering method, a vapor deposition method, or the like.

遮光膜5使用與半透膜4相同的材質。在本實施方式中，遮光膜5使用Cr類化合物。遮光膜5相對於曝光光源所包含的代表波長具有1%以下的透射率。或者，只要遮光部的光密度（OD值）滿足2.7以上即可。作為一例，遮光膜5是具有第一成膜層和第二成膜層之層疊結構。第一成膜層由Cr膜構成，目的是遮光性。第二成膜層由氧化鉻膜構成，目的是抑制反射。在此情況下，即使第一成膜層的透射率高於1%，只要第一成膜層以及第二成膜層的層疊透射率為1%以下即可。遮光膜5藉由濺射法、蒸鍍法等在透明基板3上成膜。The light-shielding film 5 is made of the same material as that of the semipermeable film 4 . In this embodiment, a Cr-based compound is used for the light-shielding film 5 . The light-shielding film 5 has a transmittance of 1% or less with respect to representative wavelengths included in the exposure light source. Or, what is necessary is just to satisfy the optical density (OD value) of a light-shielding part more than 2.7. As an example, the light-shielding film 5 has a laminated structure of a first film-forming layer and a second film-forming layer. The first film-forming layer is composed of a Cr film, and its purpose is light-shielding properties. The second film-forming layer is composed of a chromium oxide film for the purpose of suppressing reflection. In this case, even if the transmittance of the first film-forming layer is higher than 1%, the laminated transmittance of the first film-forming layer and the second film-forming layer may be 1% or less. The light-shielding film 5 is formed on the transparent substrate 3 by a sputtering method, a vapor deposition method, or the like.

半透膜4以及遮光膜5由於使用相同材質，因此蝕刻特性相同。然而，半透膜4以及遮光膜5和後述的中間膜6由於材質不同，因此蝕刻特性不同。即，半透膜4以及遮光膜5相對於中間膜6具有蝕刻選擇性，中間膜6相對於半透膜4以及遮光膜5具有蝕刻選擇性。Since the semi-permeable film 4 and the light-shielding film 5 are made of the same material, the etching characteristics are the same. However, the semipermeable film 4 and the light-shielding film 5 are different from the intermediate film 6 described later in their materials, so their etching characteristics are different. That is, the semipermeable film 4 and the light shielding film 5 have etching selectivity to the intermediate film 6 , and the intermediate film 6 has etching selectivity to the semipermeable film 4 and the light shielding film 5 .

＜光罩坯料的結構＞ 接著，對本發明的一個實施方式的光罩坯料即作為光罩1的基礎的光罩坯料的結構進行說明。 ＜Structure of photomask blank＞ Next, the structure of the photomask blank which is the base of the photomask 1 which is one Embodiment of this invention is demonstrated.

如圖2所示，光罩坯料2是光罩1的孔圖案7形成之前的狀態的坯料。即，光罩坯料2以在透明基板3的表面（的有效區域）整個面上不具有透射部而使半透膜4以及遮光膜5彼此邊緣相接並排列在同一平面狀的方式而形成。另外，雖然是指同一平面狀，但半透膜4以及遮光膜5的各膜厚不一定是相同的厚度。例如，當然可以存在半透膜4的厚度小於遮光膜5的厚度的情況，或者相反的情況。As shown in FIG. 2, the photomask blank 2 is the blank of the state before the hole pattern 7 of the photomask 1 was formed. That is, the photomask blank 2 is formed so that the semi-permeable film 4 and the light-shielding film 5 are arranged on the same plane while not having a transmissive portion on the entire surface (effective area) of the transparent substrate 3 . In addition, although it refers to the same planar shape, the film thicknesses of the semipermeable film 4 and the light shielding film 5 are not necessarily the same. For example, there may of course be a case where the thickness of the semipermeable film 4 is smaller than that of the light shielding film 5, or vice versa.

＜光罩坯料的第一製造方法＞ 接著，對本發明的實施方式1的光罩坯料2的製造方法（光罩坯料2的第一製造方法）進行說明。 ＜The first manufacturing method of photomask blank＞ Next, the manufacturing method of the mask blank 2 (1st manufacturing method of the mask blank 2) which concerns on Embodiment 1 of this invention is demonstrated.

概略地說，該製造方法是如下的光罩坯料2的製造方法，即，將透明基板3的表面劃分為第一圖案區域和第二圖案區域，在第一圖案區域形成有第一功能性膜，在第二圖案區域形成有第二功能性膜，其中，第一圖案區域為半透膜4的區域，第二圖案區域為遮光膜5的區域，第一功能性膜為半透膜4，第二功能性膜為遮光膜5。另外，功能性膜是指具有調整曝光光源的光學特性的功能的膜。功能性膜包括具有改變曝光光源的相位的功能的相移膜、具有調節曝光光源的透射率的功能的半透膜、具有遮蔽曝光光源的功能的遮光膜等。Roughly speaking, this manufacturing method is a manufacturing method of the photomask blank 2 in which the surface of the transparent substrate 3 is divided into a first pattern area and a second pattern area, and a first functional film is formed in the first pattern area. , a second functional film is formed in the second pattern area, wherein the first pattern area is the area of the semi-permeable film 4, the second pattern area is the area of the light-shielding film 5, and the first functional film is the semi-permeable film 4, The second functional film is the light-shielding film 5 . In addition, a functional film refers to a film having a function of adjusting the optical characteristics of an exposure light source. The functional film includes a phase shift film having the function of changing the phase of the exposure light source, a semi-permeable film having the function of adjusting the transmittance of the exposure light source, a light-shielding film having the function of shielding the exposure light source, and the like.

具體而言，該製造方法包括： i）光罩坯料準備步驟（步驟1） ii）抗蝕劑膜形成步驟（步驟2） iii）描繪步驟（步驟3） iv）顯影步驟（步驟4） v）中間膜蝕刻步驟（步驟5） vi）半透膜蝕刻步驟（步驟6） vii）抗蝕劑膜去除步驟（步驟7） viii）遮光膜形成步驟（步驟8） ix）抗蝕劑膜形成步驟（步驟9） x）描繪步驟（步驟10） xi）顯影步驟（步驟11） xii）遮光膜蝕刻步驟（步驟12） xiii）中間膜蝕刻步驟（步驟13） xiv）抗蝕劑膜去除步驟（步驟14） xv）精加工步驟（步驟15）。 Specifically, the manufacturing method includes: i) Mask blank preparation step (step 1) ii) Resist film formation step (step 2) iii) Delineate steps (step 3) iv) Developing step (step 4) v) Interlayer etching step (step 5) vi) Semi-permeable membrane etching step (step 6) vii) Resist film removal step (step 7) viii) Shading film forming step (step 8) ix) Resist film formation step (step 9) x) Delineate steps (step 10) xi) Developing step (step 11) xii) Light-shielding film etching step (step 12) xiii) Interlayer etching step (step 13) xiv) Resist film removal step (step 14) xv) Finishing step (step 15).

另外，將從抗蝕劑膜形成步驟（步驟2）到抗蝕劑膜去除步驟（步驟7）、從抗蝕劑膜形成步驟（步驟9）到抗蝕劑膜去除步驟（步驟14）分別稱為圖案化步驟。在前者的圖案化步驟中，對光罩坯料2的半透膜4進行圖案化，在後者的圖案化步驟中，對光罩坯料2的遮光膜5進行圖案化。In addition, the resist film formation step (step 2) to the resist film removal step (step 7), and the resist film formation step (step 9) to the resist film removal step (step 14) are respectively called for the patterning step. In the former patterning step, the semipermeable film 4 of the photomask blank 2 is patterned, and in the latter patterning step, the light shielding film 5 of the photomask blank 2 is patterned.

如圖3（a）所示，在光罩坯料準備步驟（步驟1）中，在透明基板3上形成半透膜4，在半透膜4上形成中間膜（蝕刻阻擋膜）6，由此，準備在透明基板3之上層疊形成有半透膜4以及中間膜6之光罩坯料（第一次光罩坯料）。中間膜6使用非Cr類的材質。在本實施方式中，中間膜6使用Ni、Ti或矽化鉬化合物。半透膜4和中間膜6分別藉由濺射法、蒸鍍法等成膜。As shown in Fig. 3(a), in the photomask blank preparation step (step 1), a semipermeable film 4 is formed on a transparent substrate 3, and an intermediate film (etching stop film) 6 is formed on the semipermeable film 4, thereby , prepare a photomask blank (primary photomask blank) in which the semipermeable film 4 and the intermediate film 6 are laminated and formed on the transparent substrate 3 . The intermediate film 6 is made of a material other than Cr. In this embodiment, Ni, Ti, or molybdenum silicide compounds are used for the intermediate film 6 . The semipermeable film 4 and the intermediate film 6 are respectively formed by a sputtering method, a vapor deposition method, or the like.

如圖3（b）所示，在第一次的抗蝕劑膜形成步驟（步驟2）中，抗蝕劑被均勻地塗佈到中間膜6之上，而形成抗蝕劑膜8。抗蝕劑藉由塗佈法或者噴霧法來進行塗佈。As shown in FIG. 3( b ), in the first resist film forming step (step 2 ), a resist is uniformly applied on the intermediate film 6 to form a resist film 8 . The resist is applied by a coating method or a spray method.

如圖3（c）所示，在第一次描繪步驟（步驟3）中，使用描繪裝置的電子束或雷射向抗蝕劑膜8照射曝光光源，描繪與光罩坯料2的半透膜4的區域對應的抗蝕劑圖案。另外，在第一次描繪步驟（步驟3）中，除了描繪抗蝕劑圖案之外，還描繪用於使第二次描繪步驟（步驟10）中的描繪位置對準的標記（對準標記）。雖然未圖示，但對準標記例如在包圍抗蝕劑圖案的週邊區域的適當的3處或4處形成。As shown in FIG. 3(c), in the first drawing step (step 3), the resist film 8 is irradiated with an exposure light source using the electron beam or laser of the drawing device, and the semi-permeable film with the mask blank 2 is drawn. 4 areas correspond to the resist pattern. Also, in the first drawing step (step 3), in addition to drawing the resist pattern, a mark (alignment mark) for aligning the drawing position in the second drawing step (step 10) is also drawn . Although not shown, alignment marks are formed, for example, at appropriate three or four places surrounding the peripheral region of the resist pattern.

如圖3（d）所示，在第一次顯影步驟（步驟4）中，藉由顯影去除不需要的抗蝕劑膜8（部分8a），形成抗蝕劑圖案。顯影藉由浸漬於顯影液中來進行。另外，將描繪步驟（步驟3）和顯影步驟（步驟4）合稱為抗蝕劑圖案形成步驟。As shown in FIG. 3( d ), in the first development step (step 4 ), unnecessary resist film 8 (portion 8 a ) is removed by development to form a resist pattern. Image development is performed by immersing in a developing solution. In addition, the drawing step (step 3) and the development step (step 4) are collectively referred to as a resist pattern forming step.

如圖4（a）所示，在中間膜蝕刻步驟（步驟5）中，使用抗蝕劑圖案作為蝕刻處理用遮罩，藉由蝕刻去除中間膜6的露出部分。蝕刻可以是乾式蝕刻、濕式蝕刻中的任一種，但如果是大型尺寸的光罩，則較佳是濕式蝕刻。蝕刻劑使用蝕刻液或蝕刻氣體。無論是哪種蝕刻劑，都使用對中間膜6具有蝕刻選擇性的蝕刻劑（不蝕刻半透膜4的蝕刻劑）。As shown in FIG. 4( a ), in the intermediate film etching step (step 5 ), the exposed portion of the intermediate film 6 is removed by etching using the resist pattern as an etching mask. Etching may be either dry etching or wet etching, but wet etching is preferable for a large-sized photomask. As the etchant, etchant or etching gas is used. Regardless of the etchant, an etchant having etching selectivity to the intermediate film 6 (an etchant that does not etch the semipermeable film 4 ) is used.

如圖4（b）所示，在半透膜蝕刻步驟（步驟6）中，將中間膜6作為蝕刻處理用遮罩，藉由蝕刻去除半透膜4的露出部分。蝕刻可以是乾式蝕刻、濕式蝕刻中的任一種，但如果是大型尺寸的光罩，則較佳是濕式蝕刻。蝕刻劑使用蝕刻液或蝕刻氣體。無論是哪種蝕刻劑，都使用對半透膜4具有蝕刻選擇性的蝕刻劑（不蝕刻中間膜6的蝕刻劑）。As shown in FIG. 4( b ), in the semipermeable membrane etching step (step 6 ), the exposed portion of the semipermeable membrane 4 is removed by etching using the intermediate film 6 as an etching mask. Etching may be either dry etching or wet etching, but wet etching is preferable for a large-sized photomask. As the etchant, etchant or etching gas is used. Regardless of the etchant, an etchant having etching selectivity to the semipermeable film 4 (an etchant that does not etch the intermediate film 6 ) is used.

如圖4（c）所示，在第一次抗蝕劑膜去除步驟（步驟7）中，去除抗蝕劑膜8。藉由灰化法或浸漬於抗蝕劑剝離液來去除抗蝕劑膜8。As shown in FIG. 4( c ), in the first resist film removal step (step 7 ), the resist film 8 is removed. The resist film 8 is removed by ashing or dipping in a resist stripping solution.

如圖5（a）所示，在遮光膜形成步驟（步驟8）中，在去除了半透膜4之透明基板3的露出部分以及半透膜4上形成遮光膜5。遮光膜5藉由濺射法、蒸鍍法等成膜。As shown in FIG. 5( a ), in the light shielding film forming step (step 8 ), the light shielding film 5 is formed on the exposed portion of the transparent substrate 3 from which the semipermeable film 4 has been removed and the semipermeable film 4 . The light-shielding film 5 is formed by a sputtering method, a vapor deposition method, or the like.

如圖5（b）所示，在第二次抗蝕劑膜形成步驟（步驟9）中，與第一次抗蝕劑膜形成步驟（步驟2）相同，在遮光膜5上塗佈抗蝕劑，形成抗蝕劑膜8。抗蝕劑藉由塗佈法或者噴霧法來進行塗佈。As shown in Fig. 5(b), in the second resist film forming step (step 9), the resist is coated on the light-shielding film 5 in the same way as the first resist film forming step (step 2). agent to form a resist film 8. The resist is applied by a coating method or a spray method.

如圖5（c）所示，在第二次描繪步驟（步驟10）中，與第一次描繪步驟（步驟3）相同，使用描繪裝置的電子束或雷射向抗蝕劑膜8照射曝光光源，描繪與光罩坯料2的遮光膜5的區域對應的抗蝕劑圖案。描繪裝置是與在第一次描繪步驟（步驟3）中使用的描繪裝置相同的裝置。在第二次描繪步驟（步驟10）中，描繪裝置檢測在第一次描繪步驟（步驟3）中形成的對準標記，進行透明基板3的對位。As shown in FIG. 5(c), in the second drawing step (step 10), as in the first drawing step (step 3), the resist film 8 is irradiated with an electron beam or a laser from a drawing device to expose The light source draws a resist pattern corresponding to the region of the light-shielding film 5 of the photomask blank 2 . The rendering device is the same device as that used in the first rendering step (step 3). In the second drawing step (step 10 ), the drawing device detects the alignment mark formed in the first drawing step (step 3 ), and aligns the transparent substrate 3 .

但是，即使提高對準的精度，完全消除對準偏差也是非常困難的。因此，在第二次描繪步驟（步驟10）中，設定考慮了對準偏差的抗蝕劑圖案。具體而言，藉由將光罩坯料2的遮光膜5的邊緣向外偏移（+偏移），設定以重疊量L在半透膜4、中間膜6以及遮光膜5的層疊部的邊緣部進行重疊（lap）的這種抗蝕劑圖案。重疊量L例如為0.3μm以上且0.5μm以下的值。However, even if the accuracy of alignment is improved, it is very difficult to completely eliminate misalignment. Therefore, in the second drawing step (step 10 ), a resist pattern in consideration of misalignment is set. Specifically, by shifting the edge of the light-shielding film 5 of the photomask blank 2 outward (+offset), an overlap amount L is set at the edge of the laminated portion of the semi-permeable film 4, the intermediate film 6, and the light-shielding film 5. This resist pattern is partially lapped. The overlapping amount L is, for example, a value of not less than 0.3 μm and not more than 0.5 μm.

如圖5（d）所示，在第二次顯影步驟（步驟11）中，與第一次顯影步驟（步驟4）相同，藉由顯影去除不需要的抗蝕劑膜8（部分8a），形成抗蝕劑圖案。顯影藉由浸漬於顯影液中來進行。另外，將描繪步驟（步驟10）和顯影步驟（步驟11）合稱為抗蝕劑圖案形成步驟。As shown in FIG. 5(d), in the second developing step (step 11), the unnecessary resist film 8 (part 8a) is removed by developing in the same way as the first developing step (step 4), A resist pattern is formed. Image development is performed by immersing in a developing solution. In addition, the drawing step (step 10 ) and the development step (step 11 ) are collectively referred to as a resist pattern forming step.

如圖6（a）所示，在遮光膜蝕刻步驟（步驟12）中，將抗蝕劑圖案作為蝕刻處理用遮罩，藉由蝕刻去除遮光膜5的露出部分。蝕刻可以是乾式蝕刻、濕式蝕刻中的任一種，但如果是大型尺寸的光罩，則較佳是濕式蝕刻。蝕刻劑使用蝕刻液或蝕刻氣體。無論是哪種蝕刻劑，都使用對遮光膜5具有蝕刻選擇性的蝕刻劑（不蝕刻中間膜6的蝕刻劑）。As shown in FIG. 6( a ), in the light-shielding film etching step (step 12 ), the exposed portion of the light-shielding film 5 is removed by etching using the resist pattern as an etching mask. Etching may be either dry etching or wet etching, but wet etching is preferable for a large-sized photomask. As the etchant, etchant or etching gas is used. Regardless of the etchant, an etchant having etching selectivity to the light-shielding film 5 (an etchant that does not etch the intermediate film 6 ) is used.

如圖6（b）所示，在中間膜蝕刻步驟（步驟13）中，使用遮光膜5（如果沒有殘留遮光膜5，則為抗蝕劑圖案）作為蝕刻處理用遮罩，藉由蝕刻去除中間膜6的露出部分。蝕刻可以是乾式蝕刻、濕式蝕刻中的任一種，但如果是大型尺寸的光罩，則較佳是濕式蝕刻。蝕刻劑使用蝕刻液或蝕刻氣體。無論是哪種蝕刻劑，都使用對中間膜6具有蝕刻選擇性的蝕刻劑（不蝕刻半透膜4的蝕刻劑）。As shown in Fig. 6(b), in the intermediate film etching step (step 13), the light-shielding film 5 (resist pattern if no light-shielding film 5 remains) is used as a mask for etching, and is removed by etching. The exposed part of the intermediate film 6. Etching may be either dry etching or wet etching, but wet etching is preferable for a large-sized photomask. As the etchant, etchant or etching gas is used. Regardless of the etchant, an etchant having etching selectivity to the intermediate film 6 (an etchant that does not etch the semipermeable film 4 ) is used.

如圖6（c）所示，在第二次抗蝕劑膜去除步驟（步驟14）中，與第一次抗蝕劑膜去除步驟（步驟7）相同，去除抗蝕劑膜8。藉由灰化法或浸漬於抗蝕劑剝離液來去除抗蝕劑膜8。As shown in FIG. 6( c ), in the second resist film removal step (step 14 ), the resist film 8 is removed as in the first resist film removal step (step 7 ). The resist film 8 is removed by ashing or dipping in a resist stripping solution.

如圖6（d）所示，在精加工步驟（步驟15）中，去除由於上述重疊而殘留的中間膜6以及遮光膜5的殘渣9。殘渣9由於寬度窄、剛性低，所以能夠藉由清洗等簡單地去除。或者，如果在遮光膜蝕刻步驟（步驟12）中對遮光膜5進行側蝕刻，並在中間膜蝕刻步驟（步驟13）中對中間膜6進行側蝕刻，從而不殘留殘渣9，則不需要精加工步驟（步驟15）。As shown in FIG. 6( d ), in the finishing step (step 15 ), the residue 9 of the intermediate film 6 and the light-shielding film 5 remaining due to the above overlapping is removed. Since the residue 9 has a narrow width and low rigidity, it can be easily removed by washing or the like. Alternatively, if the light-shielding film 5 is side-etched in the light-shielding film etching step (step 12) and the interlayer film 6 is side-etched in the interlayer film etching step (step 13) so that no residue 9 remains, no finishing is required. Processing step (step 15).

經過以上的步驟1至步驟15，完成作為第二次光罩坯料的光罩坯料2。After the above step 1 to step 15, the photomask blank 2 as the second photomask blank is completed.

＜光罩坯料的第二製造方法＞ 接著，對本發明的實施方式2的光罩坯料2的製造方法（光罩坯料2的第二製造方法）進行說明。 <Second Manufacturing Method of Photomask Blank> Next, the manufacturing method of the mask blank 2 (2nd manufacturing method of the mask blank 2) which concerns on Embodiment 2 of this invention is demonstrated.

概略地說，該製造方法是如下的光罩坯料2的製造方法，即，將透明基板3的表面劃分為第一圖案區域和第二圖案區域，在第一圖案區域形成有第一功能性膜，在第二圖案區域形成有第二功能性膜，其中，第一圖案區域為遮光膜5的區域，第二圖案區域為半透膜4的區域，第一功能性膜為遮光膜5，第二功能性膜為半透膜4。Roughly speaking, this manufacturing method is a manufacturing method of the photomask blank 2 in which the surface of the transparent substrate 3 is divided into a first pattern area and a second pattern area, and a first functional film is formed in the first pattern area. , a second functional film is formed in the second pattern area, wherein the first pattern area is the area of the light-shielding film 5, the second pattern area is the area of the semi-permeable film 4, the first functional film is the light-shielding film 5, and the second pattern area is the area of the semi-permeable film 4. The second functional membrane is a semipermeable membrane 4 .

具體而言，該製造方法包括： i）光罩坯料準備步驟（步驟1） ii）抗蝕劑膜形成步驟（步驟2） iii）描繪步驟（步驟3） iv）顯影步驟（步驟4） v）中間膜蝕刻步驟（步驟5） vi）遮光膜蝕刻步驟（步驟6） vii）抗蝕劑膜去除步驟（步驟7） viii）半透膜形成步驟（步驟8） ix）抗蝕劑膜形成步驟（步驟9） x）描繪步驟（步驟10） xi）顯影步驟（步驟11） xii）半透膜蝕刻步驟（步驟12） xiii）中間膜蝕刻步驟（步驟13） xiv）抗蝕劑膜去除步驟（步驟14） xv）精加工步驟（步驟15）。 Specifically, the manufacturing method includes: i) Mask blank preparation step (step 1) ii) Resist film formation step (step 2) iii) Delineate steps (step 3) iv) Developing step (step 4) v) Interlayer etching step (step 5) vi) Light-shielding film etching step (step 6) vii) Resist film removal step (step 7) viii) Semipermeable Membrane Formation Step (Step 8) ix) Resist film formation step (step 9) x) Delineate steps (step 10) xi) Developing step (step 11) xii) Semi-permeable membrane etching step (step 12) xiii) Interlayer etching step (step 13) xiv) Resist film removal step (step 14) xv) Finishing step (step 15).

另外，將從抗蝕劑膜形成步驟（步驟2）到抗蝕劑膜去除步驟（步驟7）、從抗蝕劑膜形成步驟（步驟9）到抗蝕劑膜去除步驟（步驟14）分別稱為圖案化步驟。在前者的圖案化步驟中，對光罩坯料2的遮光膜5進行圖案化，在後者的圖案化步驟中，對光罩坯料2的半透膜4進行圖案化。In addition, the resist film formation step (step 2) to the resist film removal step (step 7), and the resist film formation step (step 9) to the resist film removal step (step 14) are respectively called for the patterning step. In the former patterning step, the light-shielding film 5 of the photomask blank 2 is patterned, and in the latter patterning step, the semipermeable film 4 of the photomask blank 2 is patterned.

第二製造方法與第一製造方法的不同之處在於，在第一製造方法中，先對半透膜4進行圖案化，然後對遮光膜5進行圖案化，而在第二製造方法中，先對遮光膜5進行圖案化，然後對半透膜4進行圖案化。除了與此相關的事項以外，兩者相同。因此，以下說明不同點，對於相同點，作為與第一製造方法的說明相同而省略說明。The difference between the second manufacturing method and the first manufacturing method is that in the first manufacturing method, the semi-permeable film 4 is patterned first, and then the light-shielding film 5 is patterned, while in the second manufacturing method, the light-shielding film 5 is patterned first. The light-shielding film 5 is patterned, and then the semipermeable film 4 is patterned. Both are the same except for things related to that. Therefore, the difference will be described below, and the description of the same point will be omitted as it is the same as the description of the first manufacturing method.

如圖7（a）所示，在光罩坯料準備步驟（步驟1）中，在透明基板3上形成遮光膜5，在遮光膜5上形成中間膜（蝕刻阻擋膜）6，由此，準備在透明基板3之上層疊形成有遮光膜5以及中間膜6之光罩坯料（第一次光罩坯料）。As shown in Fig. 7(a), in the photomask blank preparation step (step 1), a light-shielding film 5 is formed on a transparent substrate 3, and an intermediate film (etching stopper film) 6 is formed on the light-shielding film 5, thereby preparing A mask blank (primary mask blank) in which a light-shielding film 5 and an interlayer film 6 are formed is laminated on the transparent substrate 3 .

如圖7（c）所示，在第一次描繪步驟（步驟3）中，描繪與光罩坯料2的遮光膜5的區域對應的抗蝕劑圖案。As shown in FIG. 7( c ), in the first drawing step (step 3 ), a resist pattern corresponding to the region of the light-shielding film 5 of the mask blank 2 is drawn.

如圖8（a）所示，在中間膜蝕刻步驟（步驟5）中，使用抗蝕劑圖案作為蝕刻處理用遮罩，藉由蝕刻去除中間膜6的露出部分。蝕刻劑使用對中間膜6具有蝕刻選擇性的蝕刻劑（不蝕刻遮光膜5的蝕刻劑）。As shown in FIG. 8( a ), in the intermediate film etching step (step 5 ), the exposed portion of the intermediate film 6 is removed by etching using the resist pattern as an etching mask. As the etchant, an etchant having etching selectivity to the intermediate film 6 (an etchant that does not etch the light-shielding film 5 ) is used.

如圖8（b）所示，在遮光膜蝕刻步驟（步驟6）中，將中間膜6作為蝕刻處理用遮罩，藉由蝕刻去除遮光膜5的露出部分。蝕刻劑使用對遮光膜5具有蝕刻選擇性的蝕刻劑（不蝕刻中間膜6的蝕刻劑）。As shown in FIG. 8( b ), in the light-shielding film etching step (step 6 ), the exposed portion of the light-shielding film 5 is removed by etching using the intermediate film 6 as an etching mask. As the etchant, an etchant having etching selectivity to the light-shielding film 5 (an etchant that does not etch the intermediate film 6 ) is used.

如圖9（a）所示，在半透膜形成步驟（步驟8）中，在去除了遮光膜5之透明基板3的露出部分以及遮光膜5上形成半透膜4。As shown in FIG. 9( a ), in the semipermeable film forming step (step 8 ), the semipermeable film 4 is formed on the exposed portion of the transparent substrate 3 from which the light shielding film 5 has been removed and the light shielding film 5 .

如圖9（c）所示，在第二次描繪步驟（步驟10）中，描繪與光罩坯料2的半透膜4的區域對應的抗蝕劑圖案。但是，抗蝕劑圖案是藉由將光罩坯料2的半透膜4的邊緣向外偏移（+偏移），設定以重疊量L在遮光膜5、中間膜6以及半透膜4的層疊部的邊緣部進行重疊（lap）的這種抗蝕劑圖案。As shown in FIG. 9( c ), in the second drawing step (step 10 ), a resist pattern corresponding to the region of the semipermeable film 4 of the photomask blank 2 is drawn. However, the resist pattern is set to overlap the light shielding film 5, the intermediate film 6, and the semipermeable film 4 by an overlapping amount L by shifting (+offset) the edge of the semipermeable film 4 of the photomask blank 2 outward. This resist pattern is such that the edges of the laminated portion are lapped.

如圖10（a）所示，在半透膜蝕刻步驟（步驟12）中，將抗蝕劑圖案作為蝕刻處理用遮罩，藉由蝕刻去除半透膜4的露出部分。蝕刻劑使用對半透膜4具有蝕刻選擇性的蝕刻劑（不蝕刻中間膜6的蝕刻劑）。As shown in FIG. 10( a ), in the semipermeable membrane etching step (step 12 ), the exposed portion of the semipermeable membrane 4 is removed by etching using the resist pattern as an etching mask. As the etchant, an etchant having etching selectivity to the semipermeable membrane 4 (an etchant that does not etch the intermediate film 6 ) is used.

如圖10（b）所示，在中間膜蝕刻步驟（步驟13）中，使用半透膜4（如果沒有殘留半透膜4，則為抗蝕劑圖案）作為蝕刻處理用遮罩，藉由蝕刻去除中間膜6的露出部分。蝕刻劑使用對中間膜6具有蝕刻選擇性的蝕刻劑（不蝕刻遮光膜5的蝕刻劑）。As shown in FIG. 10(b), in the intermediate film etching step (step 13), the semipermeable film 4 (resist pattern if no semipermeable film 4 remains) is used as a mask for etching, by The exposed portion of the intermediate film 6 is removed by etching. As the etchant, an etchant having etching selectivity to the intermediate film 6 (an etchant that does not etch the light-shielding film 5 ) is used.

＜光罩坯料的第三製造方法＞ 接著，對本發明的實施方式3的光罩坯料2的製造方法（光罩坯料2的第三製造方法）進行說明。 <Third Manufacturing Method of Photomask Blank> Next, the manufacturing method of the mask blank 2 (3rd manufacturing method of the mask blank 2) which concerns on Embodiment 3 of this invention is demonstrated.

概略地說，該製造方法是如下的光罩坯料2的製造方法，即，將透明基板3的表面劃分為第一圖案區域和第二圖案區域，在第一圖案區域形成有第一功能性膜，在第二圖案區域形成有第二功能性膜，其中，第一圖案區域為半透膜4的區域，第二圖案區域為遮光膜5的區域，第一功能性膜為半透膜4，第二功能性膜為遮光膜5。Roughly speaking, this manufacturing method is a manufacturing method of the photomask blank 2 in which the surface of the transparent substrate 3 is divided into a first pattern area and a second pattern area, and a first functional film is formed in the first pattern area. , a second functional film is formed in the second pattern area, wherein the first pattern area is the area of the semi-permeable film 4, the second pattern area is the area of the light-shielding film 5, and the first functional film is the semi-permeable film 4, The second functional film is the light-shielding film 5 .

具體而言，該製造方法包括： i）光罩坯料準備步驟（步驟1） ii）抗蝕劑膜形成步驟（步驟2） iii）描繪步驟（步驟3） iv）顯影步驟（步驟4） v）半透膜蝕刻步驟（步驟5） vi）抗蝕劑膜去除步驟（步驟6） vii）遮光膜形成步驟（步驟7） viii）抗蝕劑膜形成步驟（步驟8） ix）描繪步驟（步驟9） x）顯影步驟（步驟10） xi）遮光膜蝕刻步驟（步驟11） xii）抗蝕劑膜去除步驟（步驟12） xiii）精加工步驟（步驟13）。 Specifically, the manufacturing method includes: i) Mask blank preparation step (step 1) ii) Resist film formation step (step 2) iii) Delineate steps (step 3) iv) Developing step (step 4) v) Semi-permeable membrane etching step (step 5) vi) Resist film removal step (step 6) vii) Light-shielding film forming step (step 7) viii) Resist film formation step (step 8) ix) Delineate steps (step 9) x) Developing step (step 10) xi) Light-shielding film etching step (step 11) xii) Resist film removal step (step 12) xiii) Finishing step (step 13).

另外，將從抗蝕劑膜形成步驟（步驟2）到抗蝕劑膜去除步驟（步驟6）、從抗蝕劑膜形成步驟（步驟8）到抗蝕劑膜去除步驟（步驟12）分別稱為圖案化步驟。在前者的圖案化步驟中，對光罩坯料2的半透膜4進行圖案化，在後者的圖案化步驟中，對光罩坯料2的遮光膜5進行圖案化。In addition, the steps from the resist film formation step (step 2) to the resist film removal step (step 6), and from the resist film formation step (step 8) to the resist film removal step (step 12) are respectively called for the patterning step. In the former patterning step, the semipermeable film 4 of the photomask blank 2 is patterned, and in the latter patterning step, the light shielding film 5 of the photomask blank 2 is patterned.

第三製造方法與第一製造方法的不同之處在於，在第三製造方法中，i）使用未層疊中間膜6而在透明基板3上僅形成有半透膜4之光罩坯料作為第一次光罩坯料，以及相應地，不存在第一製造方法的中間膜蝕刻步驟（步驟5）以及中間膜蝕刻步驟（步驟13）；ii）半透膜4或者遮光膜5中的任何一者例如使用Cr類材質的膜，任意另一者使用非Cr類材質的膜，由此，半透膜4以及遮光膜5由於材質不同而蝕刻特性不同，以及相應地，所使用的蝕刻劑不同。除了與此相關的事項以外，兩者相同。因此，關於第三製造方法，作為與第一製造方法的說明相同而省略說明。The difference between the third manufacturing method and the first manufacturing method is that in the third manufacturing method, i) a photomask blank with no intermediate film 6 and only a semipermeable film 4 formed on a transparent substrate 3 is used as the first The sub-reticle blank, and correspondingly, there is no intermediate film etching step (step 5) and intermediate film etching step (step 13) of the first manufacturing method; ii) any one of the semi-permeable film 4 or the light shielding film 5 such as A Cr-based film is used, and any other film is made of a non-Cr-based film. Therefore, the semipermeable film 4 and the light-shielding film 5 have different etching characteristics due to different materials, and correspondingly, the used etchant is different. Both are the same except for things related to that. Therefore, the description of the third manufacturing method is omitted as it is the same as that of the first manufacturing method.

＜光罩坯料的第四製造方法＞ 接著，對本發明的實施方式4的光罩坯料2的製造方法（光罩坯料2的第四製造方法）進行說明。 <Fourth Manufacturing Method of Photomask Blank> Next, the manufacturing method of the mask blank 2 (4th manufacturing method of the mask blank 2) which concerns on Embodiment 4 of this invention is demonstrated.

概略地說，該製造方法是如下的光罩坯料2的製造方法，即，將透明基板3的表面劃分為第一圖案區域和第二圖案區域，在第一圖案區域形成有第一功能性膜，在第二圖案區域形成有第二功能性膜，其中，第一圖案區域為遮光膜5的區域，第二圖案區域為半透膜4的區域，第一功能性膜為遮光膜5，第二功能性膜為半透膜4。Roughly speaking, this manufacturing method is a manufacturing method of the photomask blank 2 in which the surface of the transparent substrate 3 is divided into a first pattern area and a second pattern area, and a first functional film is formed in the first pattern area. , a second functional film is formed in the second pattern area, wherein the first pattern area is the area of the light-shielding film 5, the second pattern area is the area of the semi-permeable film 4, the first functional film is the light-shielding film 5, and the second pattern area is the area of the semi-permeable film 4. The second functional membrane is a semipermeable membrane 4 .

具體而言，該製造方法包括： i）光罩坯料準備步驟（步驟1） ii）抗蝕劑膜形成步驟（步驟2） iii）描繪步驟（步驟3） iv）顯影步驟（步驟4） v）遮光膜蝕刻步驟（步驟5） vi）抗蝕劑膜去除步驟（步驟6） vii）半透膜形成步驟（步驟7） viii）抗蝕劑膜形成步驟（步驟8） ix）描繪步驟（步驟9） x）顯影步驟（步驟10） xi）半透膜蝕刻步驟（步驟11） xii）抗蝕劑膜去除步驟（步驟12） xiii）精加工步驟（步驟13）。 Specifically, the manufacturing method includes: i) Mask blank preparation step (step 1) ii) Resist film formation step (step 2) iii) Delineate steps (step 3) iv) Developing step (step 4) v) Light-shielding film etching step (step 5) vi) Resist film removal step (step 6) vii) Semipermeable Membrane Formation Step (Step 7) viii) Resist film formation step (step 8) ix) Delineate steps (step 9) x) Developing step (step 10) xi) semi-permeable membrane etching step (step 11) xii) Resist film removal step (step 12) xiii) Finishing step (step 13).

另外，將從抗蝕劑膜形成步驟（步驟2）到抗蝕劑膜去除步驟（步驟6）、從抗蝕劑膜形成步驟（步驟8）到抗蝕劑膜去除步驟（步驟12）分別稱為圖案化步驟。在前者的圖案化步驟中，對光罩坯料2的遮光膜5進行圖案化，在後者的圖案化步驟中，對光罩坯料2的半透膜4進行圖案化。In addition, the steps from the resist film formation step (step 2) to the resist film removal step (step 6), and from the resist film formation step (step 8) to the resist film removal step (step 12) are respectively called for the patterning step. In the former patterning step, the light-shielding film 5 of the photomask blank 2 is patterned, and in the latter patterning step, the semipermeable film 4 of the photomask blank 2 is patterned.

第四製造方法與第三製造方法的不同點在於，在第三製造方法中，先對半透膜4進行圖案化，然後對遮光膜5進行圖案化，而在第四製造方法中，先對遮光膜5進行圖案化，然後對半透膜4進行圖案化。除了與此相關的事項以外，兩者相同。因此，關於第四製造方法，作為與第一製造方法以及第二製造方法的說明相同而省略說明。The difference between the fourth manufacturing method and the third manufacturing method is that in the third manufacturing method, the semi-permeable film 4 is first patterned, and then the light-shielding film 5 is patterned, while in the fourth manufacturing method, the light-shielding film 5 is patterned first. The light shielding film 5 is patterned, and then the semipermeable film 4 is patterned. Both are the same except for things related to that. Therefore, the description of the fourth manufacturing method is omitted as it is the same as that of the first manufacturing method and the second manufacturing method.

＜光罩的製造方法＞ 接著，對本發明的一個實施方式的光罩1的製造方法進行說明。 ＜Manufacturing method of photomask＞ Next, the manufacturing method of the photomask 1 which concerns on one Embodiment of this invention is demonstrated.

該製造方法包括： i）光罩坯料準備步驟（步驟1） ii）抗蝕劑膜形成步驟（步驟2） iii）描繪步驟（步驟3） iv）顯影步驟（步驟4） v）膜蝕刻步驟（步驟5） vi）抗蝕劑膜去除步驟（步驟6）。 The manufacturing method includes: i) Mask blank preparation step (step 1) ii) Resist film formation step (step 2) iii) Delineate steps (step 3) iv) Developing step (step 4) v) Membrane etching step (step 5) vi) Resist film removal step (step 6).

另外，將從抗蝕劑膜形成步驟（步驟2）到抗蝕劑膜去除步驟（步驟7）稱為圖案化步驟。在圖案化步驟中，對光罩1的透射部進行圖案化。In addition, the steps from the resist film formation step (step 2) to the resist film removal step (step 7) are referred to as patterning steps. In the patterning step, the transmissive portion of the reticle 1 is patterned.

如圖15（a）所示，在光罩坯料準備步驟（步驟1）中，準備藉由上述光罩坯料2的任一種製造方法所製造的光罩坯料2（第二次光罩坯料）。As shown in FIG. 15( a ), in the mask blank preparation step (step 1 ), the mask blank 2 (secondary mask blank) manufactured by any of the above-mentioned mask blank 2 manufacturing methods is prepared.

如圖15（b）所示，在抗蝕劑膜形成步驟（步驟2）中，抗蝕劑被均勻地塗佈到半透膜4以及遮光膜5之上，而形成抗蝕劑膜8。抗蝕劑藉由塗佈法或者噴霧法來進行塗佈。As shown in FIG. 15( b ), in the resist film forming step (step 2 ), a resist is uniformly applied on the semipermeable film 4 and the light shielding film 5 to form a resist film 8 . The resist is applied by a coating method or a spray method.

如圖15（c）所示，在描繪步驟（步驟3）中，使用描繪裝置的電子束或雷射向抗蝕劑膜8照射曝光光源，描繪與光罩1的透射部（孔圖案7）的區域對應的抗蝕劑圖案。As shown in FIG. 15(c), in the drawing step (step 3), the resist film 8 is irradiated with an exposure light source using an electron beam or laser from a drawing device, and the transmissive part (hole pattern 7) corresponding to the mask 1 is drawn. The regions correspond to the resist pattern.

但是，雖然半透膜4以及遮光膜5的蝕刻特性相同，但是在兩者的蝕刻速率不同的情況下，在膜蝕刻步驟（步驟5）中，半透膜4和遮光膜5在側蝕刻量方面會產生差異。其結果是，光罩1的孔圖案7中的位於半透射部的區域內的孔7A、……或者位於遮光部的區域內的孔7B、……中的至少一者的尺寸精度（光罩1的半透射部或者遮光部中的至少一者相對於透射部的邊緣位置精度）變差。因此，在描繪步驟（步驟3）中，設定考慮了蝕刻速率偏差的抗蝕劑圖案。具體地說，例如在半透膜4的蝕刻速率比遮光膜5高的情況下，設定如下的抗蝕劑圖案：相對於圖17（a）以及圖17（b）所示的孔7A、7B為本來的尺寸形狀，如圖17（c）所示，相對於位於半透射部的區域內的孔7A、……，使邊緣向內側偏移（-偏移）；或者如圖17（d）所示，相對於位於遮光部的區域內的孔7B、……，使邊緣向外側偏移（+偏移）。當然，在半透膜4以及遮光膜5的蝕刻速率相同或者近似的情況下，不需要進行偏移處理。However, although the semi-permeable film 4 and the light-shielding film 5 have the same etching characteristics, in the case where the etching rates of the two are different, in the film etching step (step 5), the semi-permeable film 4 and the light-shielding film 5 are etched by the amount at the side. aspects will differ. As a result, in the hole pattern 7 of the reticle 1, the dimensional accuracy of at least one of the holes 7A located in the region of the semi-transmissive part, ... or the holes 7B located in the region of the light shielding part, ... (reticle 1, the edge position accuracy of at least one of the semi-transmissive portion or the light-shielding portion relative to the transmissive portion) deteriorates. Therefore, in the drawing step (step 3 ), a resist pattern is set in consideration of variation in etching rate. Specifically, for example, when the etching rate of the semipermeable film 4 is higher than that of the light-shielding film 5 , a resist pattern is set as follows: For the holes 7A and 7B shown in FIG. 17( a ) and FIG. 17( b ), For the original size and shape, as shown in Figure 17(c), relative to the hole 7A, ... located in the area of the semi-transmissive part, the edge is shifted inward (-shift); or as shown in Figure 17(d) As shown, the edges are offset (+offset) to the outside with respect to the holes 7B, . Of course, in the case where the etching rates of the semipermeable film 4 and the light shielding film 5 are the same or similar, no offset processing is required.

另外，作為關於蝕刻速率的另一種方法，可採用這樣的方法，即：以使半透膜4以及遮光膜5的蝕刻速率相同或近似的方式來形成（成膜）半透膜4以及遮光膜5。這是在光罩坯料2的製造階段，在半透膜4的膜厚方向改變含有化合物的組成比，藉由組成漸變來調整蝕刻速率。例如，能夠採用藉由在膜厚方向朝向蝕刻所進行的方向提高蝕刻難度來減慢蝕刻速率的方法。或者，也可以是與此相反的調整方法。In addition, as another method regarding the etching rate, a method may be adopted in which the semi-permeable film 4 and the light-shielding film 5 are formed (formed) so that the etching rates of the semi-permeable film 4 and the light-shielding film 5 are the same or similar. 5. This is to adjust the etching rate by changing the composition ratio of the compound in the film thickness direction of the semipermeable film 4 during the manufacturing stage of the photomask blank 2 . For example, a method of slowing down the etching rate by increasing the etching difficulty in the film thickness direction toward the direction in which etching proceeds can be employed. Alternatively, an adjustment method opposite to this may be used.

如圖15（d）所示，在顯影步驟（步驟4）中，藉由顯影去除不需要的抗蝕劑膜8（部分8a），形成抗蝕劑圖案。顯影藉由浸漬於顯影液中來進行。另外，將描繪步驟（步驟3）和顯影步驟（步驟4）合稱為抗蝕劑圖案形成步驟。As shown in FIG. 15( d ), in the development step (step 4 ), unnecessary resist film 8 (portion 8 a ) is removed by development to form a resist pattern. Image development is performed by immersing in a developing solution. In addition, the drawing step (step 3) and the development step (step 4) are collectively referred to as a resist pattern forming step.

如圖16（a）所示，在膜蝕刻步驟（步驟5）中，將抗蝕劑圖案作為蝕刻處理用遮罩，藉由蝕刻去除半透膜4以及遮光膜5的露出部分。蝕刻可以是乾式蝕刻、濕式蝕刻中的任一種，但如果是大型尺寸的光罩，則較佳是濕式蝕刻。蝕刻劑使用蝕刻液或蝕刻氣體。As shown in FIG. 16( a ), in the film etching step (step 5 ), the exposed portions of the semipermeable film 4 and the light shielding film 5 are removed by etching using the resist pattern as an etching mask. Etching may be either dry etching or wet etching, but wet etching is preferable for a large-sized photomask. As the etchant, etchant or etching gas is used.

但是，在採用上述光罩坯料2的第三製造方法以及第四製造方法製造的光罩坯料2的情況下，由於半透膜4和遮光膜5的蝕刻特性不同，使用的蝕刻劑不同，因此膜蝕刻步驟（步驟5）分為圖16（b）所示的半透膜蝕刻步驟（步驟5-1）和圖16（c）所示的遮光膜蝕刻步驟（步驟5-2）。順序是哪個在前都可以。However, in the case of the photomask blanks 2 manufactured by the third manufacturing method and the fourth manufacturing method of the above-mentioned photomask blank 2, since the etching properties of the semipermeable film 4 and the light shielding film 5 are different, the etchant used is different, so The film etching step (step 5) is divided into a semipermeable film etching step (step 5-1) shown in FIG. 16(b) and a light-shielding film etching step (step 5-2) shown in FIG. 16(c). It doesn't matter which one comes first.

如圖16（d）所示，在抗蝕劑膜去除步驟（步驟6）中，去除抗蝕劑膜8。藉由灰化法或浸漬於抗蝕劑剝離液來去除抗蝕劑膜8。As shown in FIG. 16( d ), in the resist film removal step (step 6 ), the resist film 8 is removed. The resist film 8 is removed by ashing or dipping in a resist stripping solution.

經過以上的步驟1至步驟6，完成光罩1。After the above steps 1 to 6, the mask 1 is completed.

＜實施方式的效果＞ 根據上述光罩坯料2的各製造方法，可製造一種複合型的光罩坯料2，其在透明基板3上以半透膜4以及遮光膜5彼此邊緣相接並同一平面狀地排列的方式形成，即，具有光學特性不同的兩個區域之光罩坯料2。在該光罩坯料2中，不存在半透膜4以及遮光膜5的實質上的層疊部，光罩1的圖案的邊緣分別被規定在實質上為單層的半透膜4以及遮光膜5上。即，光罩1的圖案在整體上膜厚小、縱橫比（圖案的尺寸與高度之比）小的光罩坯料2上進行圖案化。這意味著在光罩1的圖案的邊緣不容易產生邊緣粗糙，而且蝕刻時間變短。因此，在光罩1的製造時容易進行圖案的尺寸控制，能夠在光罩1中提高圖案的尺寸精度。 <Effects of the implementation> According to the respective manufacturing methods of the photomask blank 2 described above, it is possible to manufacture a composite photomask blank 2 formed on a transparent substrate 3 such that the semipermeable film 4 and the light-shielding film 5 are arranged in the same plane with their edges in contact with each other. , that is, a mask blank 2 having two regions with different optical properties. In this photomask blank 2, there is no substantially laminated portion of the semipermeable film 4 and the light shielding film 5, and the edges of the pattern of the photomask 1 are respectively defined by the semipermeable film 4 and the light shielding film 5 which are substantially single layers. superior. That is, the pattern of the photomask 1 is patterned on the photomask blank 2 whose film thickness is small as a whole and an aspect ratio (ratio of a pattern size and height) is small. This means that edge roughness is less likely to occur at the edge of the pattern of the photomask 1, and the etching time becomes shorter. Therefore, it is easy to perform dimensional control of the pattern at the time of manufacture of the photomask 1, and the dimensional accuracy of a pattern can be improved in the photomask 1.

具體而言，如圖18所示，半透膜4以及遮光膜5分別實質上是單層的，光罩1的孔圖案7的孔7A、……在半透膜4的區域形成，孔7B、……在遮光膜5的區域形成。因此，在光罩1中，各孔7A的尺寸SA以及各孔7B的尺寸SB忠實於設計而完成。由此，與在層疊部上形成孔圖案的情況相比，能夠提高各孔7A、7B的尺寸精度，能夠圖案化出忠實於設計的高精度的孔圖案7。Specifically, as shown in FIG. 18 , the semipermeable film 4 and the light shielding film 5 are substantially single-layer respectively, and the holes 7A, ... of the hole pattern 7 of the photomask 1 are formed in the region of the semipermeable film 4, and the hole 7B is formed in the region of the semipermeable film 4. , ... are formed in the region of the light-shielding film 5 . Therefore, in the photomask 1, the dimension SA of each hole 7A and the dimension SB of each hole 7B are completed faithfully to design. Thereby, compared with the case where the hole pattern is formed in the lamination part, the dimensional accuracy of each hole 7A, 7B can be improved, and the highly accurate hole pattern 7 faithful to the design can be patterned.

此外，根據上述光罩1的製造方法，藉由一次圖案化步驟而在半透膜4形成孔7A、……的圖案和在遮光膜5形成孔7B、……的圖案，而並非分開的圖案化步驟。因此，當然不會產生對準偏差，在光罩1中，相鄰的孔7A、7B的距離D的這樣的各孔7A、7B的相對位置關係忠實於設計而完成。由此，能夠提高各孔7A、7B的位置精度，在這一點上，也能夠圖案化出忠實於設計的高精度的孔圖案7。In addition, according to the manufacturing method of the above-mentioned photomask 1, the pattern of the holes 7A, ... and the pattern of the holes 7B, ... are formed in the semi-permeable film 4 through one patterning step, rather than separate patterns. transformation step. Therefore, of course, misalignment does not occur, and in the photomask 1 , the relative positional relationship of each hole 7A, 7B such as the distance D between the adjacent holes 7A, 7B is completed faithfully to the design. Thereby, the positional accuracy of each hole 7A, 7B can be improved, and also in this point, the highly accurate hole pattern 7 faithful to the design can be patterned.

此外，根據上述光罩坯料2的第一製造方法以及第二製造方法，使用Cr類材質的膜作為半透膜4以及遮光膜5。Cr類具有耐高壓性以及耐化學品性，並且具有膜強度。因此，能夠得到與普通的光罩同等的耐清洗性。Moreover, according to the 1st manufacturing method and 2nd manufacturing method of the said photomask blank 2, the film of Cr system material is used as the semipermeable film 4 and the light-shielding film 5. The Cr type has high pressure resistance and chemical resistance, and has film strength. Therefore, cleaning resistance equivalent to that of a general photomask can be obtained.

＜其他實施方式＞ 另外，本發明並不限定於上述各實施方式，可在不脫離本發明的要旨的範圍內進行各種改變。 ＜Other Embodiments＞ In addition, this invention is not limited to each said embodiment, Various changes are possible in the range which does not deviate from the summary of this invention.

在上述光罩坯料2的第一製造方法以及第二製造方法中，作為第一功能性膜以及第二功能性膜，選擇蝕刻特性相同的膜（另外，在整個本說明書中，涉及蝕刻特性“相同”、膜的材質“相同”時，包括“近似”的概念）。但是，本發明並非限定於此。例如，i）作為第一功能性膜，可以選擇蝕刻特性分別與第二功能性膜、中間膜不同的膜，作為第二功能性膜，可以選擇蝕刻特性分別與第一功能性膜、中間膜不同的膜。或者，ii）作為第一功能性膜，可以選擇蝕刻特性分別與第二功能性膜、中間膜不同的膜，作為第二功能性膜，可以選擇蝕刻特性與第一功能性膜不同但是蝕刻特性與中間膜相同的膜。In the first manufacturing method and the second manufacturing method of the above-mentioned photomask blank 2, as the first functional film and the second functional film, a film having the same etching characteristic is selected (in addition, throughout this specification, referring to the etching characteristic " The concept of "approximate" is included when the material of the membrane is "same". However, the present invention is not limited thereto. For example, i) as the first functional film, a film whose etching characteristics are respectively different from those of the second functional film and the intermediate film can be selected; different membranes. Or, ii) as the first functional film, a film whose etching characteristics are different from the second functional film and the intermediate film can be selected, and as the second functional film, a film whose etching characteristic is different from the first functional film but has an etching characteristic can be selected. The same membrane as the intermediate membrane.

此外，在上述光罩坯料2的各製造方法中，殘渣9被去除，層疊部完全消失。但是，本發明並非限定於此。例如，在光罩中，如果是圖案的邊緣不相關（不經過）的部位，則如圖19所示，也可以殘留層疊部10。在該情況下，重疊量L設定得較大，例如為1μm以上且10μm以下的值。另外，圖19是與上述光罩坯料2的第一製造方法對應的圖。In addition, in each manufacturing method of the above-mentioned photomask blank 2, the residue 9 was removed, and the laminated part disappeared completely. However, the present invention is not limited thereto. For example, in the photomask, as long as the edge of the pattern is irrelevant (does not pass), as shown in FIG. 19 , the laminated portion 10 may remain. In this case, the overlapping amount L is set to be large, for example, to a value of not less than 1 μm and not more than 10 μm. In addition, FIG. 19 is a figure corresponding to the 1st manufacturing method of the said photomask blank 2. As shown in FIG.

此外，作為光罩坯料，也可以在上述光罩坯料2之上進一步形成具有不同透射率的半透膜。在此情況下，下層的半透膜4（第一半透膜）的透射率，藉由上層的半透膜（第二半透膜）被重新調整。即，第二半透膜用作透射率調整膜。In addition, as a photomask blank, a semipermeable film having a different transmittance may be further formed on the above-mentioned photomask blank 2 . In this case, the transmittance of the lower semipermeable membrane 4 (first semipermeable membrane) is readjusted by the upper semipermeable membrane (second semipermeable membrane). That is, the second semipermeable film functions as a transmittance adjusting film.

此外，作為光罩坯料，也可以在上述光罩坯料2上形成相移膜。在此情況下，下層的半透膜4可以設置為不影響相移效果的程度，即，可以將相移量設置為0度以上且20度以下。In addition, a phase shift film may be formed on the above-mentioned photomask blank 2 as a photomask blank. In this case, the semipermeable membrane 4 of the lower layer can be set to such an extent that the phase shift effect is not affected, that is, the phase shift amount can be set to not less than 0 degrees and not more than 20 degrees.

此外，在上述實施方式中，光罩1的圖案是孔圖案7。但是，孔圖案不過是一個例子，本發明並不限於此。作為光罩的圖案可以包括：圖案的邊緣不通過第一功能性膜的區域（第一圖案區域）和第二功能性膜的區域（第二圖案區域）的邊界而設定在第一功能性膜的區域以及第二功能性膜的區域的各區域內之圖案、以及圖案的邊緣通過第一功能性膜的區域和第二功能性膜的區域的邊界而橫跨第一功能性膜的區域和第二功能性膜的區域而設定之圖案這兩者，並可以適當採用各種圖案。In addition, in the above-described embodiment, the pattern of the photomask 1 is the hole pattern 7 . However, the hole pattern is just an example, and the present invention is not limited thereto. The pattern as a photomask may include: the edge of the pattern is not set on the first functional film by the boundary of the region of the first functional film (first pattern region) and the region of the second functional film (second pattern region) The pattern in each region of the region of the region and the region of the second functional film, and the edge of the pattern crosses the region of the first functional film and the region of the second functional film through the boundary of the region of the first functional film and the region of the second functional film. Both of the patterns set for the regions of the second functional film, various patterns can be appropriately adopted.

此外，在上述實施方式中，第一功能性膜和第二功能性膜的任意一者是半透膜4，任意另一者是遮光膜5。但是，本發明並非限定於此。作為第一功能性膜以及第二功能性膜，可以從各種功能性膜中選擇適當的功能性膜。例如，也可以是不作為半透膜的用途的相移膜。In addition, in the above-described embodiment, either one of the first functional film and the second functional film is the semipermeable film 4 , and the other is the light-shielding film 5 . However, the present invention is not limited thereto. As the first functional film and the second functional film, appropriate functional films can be selected from various functional films. For example, it may be a phase shift film not used as a semipermeable film.

另外，只要不是物理上的干擾，將以上記載的技術特徵應用於其他實施方式乃至例子、將以上記載的技術特徵置換為其他實施方式乃至例子的技術特徵、將以上記載的技術特徵彼此組合等當然也是可能的，這是本發明的當然意圖。In addition, as long as there is no physical interference, it is natural to apply the technical features described above to other embodiments or examples, replace the technical features described above with technical features of other embodiments or examples, or combine the technical features described above. It is also possible, which is of course the intention of the present invention.

1:光罩 2:光罩坯料 3:透明基板 4:半透膜 5:遮光膜 6:中間膜（蝕刻阻擋膜） 7:孔圖案 7A:半透射部中的孔 7B:遮光部中的孔 8:抗蝕劑膜 8a:部分 9:殘渣 10:層疊部 1: mask 2: Mask blank 3: Transparent substrate 4: Semi-permeable membrane 5: Shading film 6: Intermediate film (etching stop film) 7: Hole pattern 7A: Holes in the semi-transmissive part 7B: Hole in the shade 8: Resist film 8a: part 9: Residue 10: Lamination section

圖1（a）是本發明的一實施方式的光罩的主要部分放大俯視圖；圖1（b）是圖1（a）的A-A線剖視圖。 圖2（a）是本發明的一個實施方式的光罩坯料，是成為圖1的光罩的基礎的光罩坯料的主要部分放大俯視圖；圖2（b）是圖2（a）的B-B線剖視圖。 圖3（a）～（d）是本發明的實施方式1的光罩坯料的製造方法的說明圖。 圖4（a）～（c）是接著圖3的說明圖。 圖5（a）～（d）是接著圖4的說明圖。 圖6（a）～（d）是接著圖5的說明圖。 圖7（a）～（d）是本發明的實施方式2的光罩坯料的製造方法的說明圖。 圖8（a）～（c）是接著圖7的說明圖。 圖9（a）～（d）是接著圖8的說明圖。 圖10（a）～（d）是接著圖9的說明圖。 圖11（a）～（d）是本發明的實施方式3的光罩坯料的製造方法的說明圖。 圖12（a）～（b）是接著圖11的說明圖。 圖13（a）～（d）是接著圖12的說明圖。 圖14（a）～（c）是接著圖13的說明圖。 圖15（a）～（d）是本發明的一個實施方式的光罩的製造方法的說明圖。 圖16（a）～（d）是接著圖15的說明圖。 圖17（a）～（d）是圖15（c）的步驟3的補充說明圖。 圖18是圖1（a）以及圖16（d）的局部放大剖視圖。 圖19（a）～（d）是本發明的其他實施方式的光罩坯料的製造方法的說明圖。 FIG. 1( a ) is an enlarged plan view of main parts of a photomask according to one embodiment of the present invention; and FIG. 1( b ) is a sectional view taken along line A-A of FIG. 1( a ). Fig. 2(a) is a photomask blank according to an embodiment of the present invention, and is an enlarged plan view of main parts of the photomask blank which is the basis of the photomask in Fig. 1; Fig. 2(b) is a line B-B in Fig. 2(a) cutaway view. 3( a ) to ( d ) are explanatory diagrams of the manufacturing method of the photomask blank according to Embodiment 1 of the present invention. 4( a ) to ( c ) are explanatory diagrams following FIG. 3 . 5( a ) to ( d ) are explanatory diagrams following FIG. 4 . 6( a ) to ( d ) are explanatory diagrams following FIG. 5 . 7( a ) to ( d ) are explanatory diagrams of the manufacturing method of the photomask blank according to Embodiment 2 of the present invention. 8( a ) to ( c ) are explanatory diagrams following FIG. 7 . 9( a ) to ( d ) are explanatory diagrams following FIG. 8 . 10( a ) to ( d ) are explanatory diagrams following FIG. 9 . FIGS. 11( a ) to ( d ) are explanatory diagrams of a method of manufacturing a photomask blank according to Embodiment 3 of the present invention. 12( a ) to ( b ) are explanatory diagrams following FIG. 11 . 13( a ) to ( d ) are explanatory diagrams following FIG. 12 . 14( a ) to ( c ) are explanatory diagrams following FIG. 13 . 15( a ) to ( d ) are explanatory diagrams of a method of manufacturing a photomask according to one embodiment of the present invention. 16( a ) to ( d ) are explanatory diagrams following FIG. 15 . 17( a ) to ( d ) are supplementary explanatory diagrams of step 3 in FIG. 15( c ). FIG. 18 is a partially enlarged cross-sectional view of FIG. 1( a ) and FIG. 16( d ). Fig.19 (a) - (d) is explanatory drawing of the manufacturing method of the photomask blank which concerns on other embodiment of this invention.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

2:光罩坯料 2: Mask blank

3:透明基板 3: Transparent substrate

4:半透膜 4: Semi-permeable membrane

5:遮光膜 5: Shading film

Claims (12)

一種光罩坯料的製造方法，是將透明基板的表面劃分為第一圖案區域和第二圖案區域，在第一圖案區域形成有第一功能性膜，在第二圖案區域形成有第二功能性膜，該光罩坯料的製造方法的特徵在於，包括： 光罩坯料準備步驟，準備在透明基板之上形成有第一功能性膜之第一次光罩坯料； 第一圖案化步驟，以與第一圖案區域對應的圖案對第一功能性膜進行圖案化，去除第二圖案區域中的第一功能性膜； 功能性膜形成步驟，在去除了第一功能性膜之透明基板的露出部分以及第一功能性膜之上形成第二功能性膜；及， 第二圖案化步驟，以與第二圖案區域對應的圖案對第二功能性膜進行圖案化，去除第一圖案區域中的第二功能性膜。 A method for manufacturing a photomask blank, which is to divide the surface of a transparent substrate into a first pattern area and a second pattern area, a first functional film is formed in the first pattern area, and a second functional film is formed in the second pattern area. Film, the manufacturing method of the photomask blank is characterized in that, comprising: A photomask blank preparation step, preparing the first photomask blank with the first functional film formed on the transparent substrate; A first patterning step, patterning the first functional film with a pattern corresponding to the first pattern area, and removing the first functional film in the second pattern area; a functional film forming step of forming a second functional film on the exposed portion of the transparent substrate from which the first functional film is removed and the first functional film; and, In the second patterning step, the second functional film is patterned in a pattern corresponding to the second pattern area, and the second functional film in the first pattern area is removed. 如請求項1所述之光罩坯料的製造方法，其中，第二圖案化步驟包括： 抗蝕劑膜形成步驟，在第二功能性膜之上形成抗蝕劑膜； 抗蝕劑圖案形成步驟，藉由將抗蝕劑圖案的邊緣位置向外偏移，而形成以規定的重疊量在第一功能性膜以及第二功能性膜的層疊部的邊緣部進行重疊的抗蝕劑圖案，該抗蝕劑圖案與第二圖案區域對應；及， 蝕刻步驟，將抗蝕劑圖案作為遮罩，藉由蝕刻去除第一圖案區域中的第二功能性膜的露出部分。 The method for manufacturing a photomask blank as claimed in claim 1, wherein the second patterning step comprises: a resist film forming step of forming a resist film on the second functional film; In the resist pattern forming step, by shifting the edge position of the resist pattern outward, a predetermined overlapping amount is formed to overlap the edge portion of the laminated portion of the first functional film and the second functional film. a resist pattern corresponding to the second pattern area; and, In the etching step, the exposed part of the second functional film in the first pattern area is removed by etching using the resist pattern as a mask. 如請求項2所述之光罩坯料的製造方法，其中，還包括：精加工步驟，去除由於規定的重疊量的重疊而殘留的第二功能性膜的殘渣。The method for manufacturing a photomask blank according to claim 2, further comprising: a finishing step of removing residues of the second functional film remaining due to overlapping by a predetermined overlapping amount. 如請求項1至3中任一項所述之光罩坯料的製造方法，其中，作為第一次光罩坯料，使用一種光罩坯料，在透明基板之上形成有第一功能性膜且在第一功能性膜之上形成有具有與第一功能性膜不同的蝕刻特性的中間膜； 作為第二功能性膜，使用具有與第一功能性膜相同的蝕刻特性的膜。 The method for manufacturing a photomask blank according to any one of Claims 1 to 3, wherein, as the first photomask blank, a photomask blank is used in which a first functional film is formed on a transparent substrate and an intermediate film having an etching characteristic different from that of the first functional film is formed over the first functional film; As the second functional film, a film having the same etching characteristics as the first functional film is used. 如請求項4所述之光罩坯料的製造方法，其中，作為第一功能性膜以及第二功能性膜，使用選自Cr類、Ni類、Ti類、Si類、金屬矽化物類、以及調整了氮含量之金屬之中的材質的膜。The method for manufacturing a photomask blank as claimed in Claim 4, wherein, as the first functional film and the second functional film, a film selected from Cr-based, Ni-based, Ti-based, Si-based, metal silicide-based, and Adjusted the membrane of the material among metals with nitrogen content. 如請求項1至3中任一項所述之光罩坯料的製造方法，其中，作為第一次光罩坯料，使用在透明基板之上形成有第一功能性膜之光罩坯料； 作為第二功能性膜，使用具有與第一功能性膜不同的蝕刻特性的膜。 The method for manufacturing a photomask blank according to any one of claims 1 to 3, wherein, as the first photomask blank, a photomask blank with a first functional film formed on a transparent substrate is used; As the second functional film, a film having an etching characteristic different from that of the first functional film is used. 如請求項1至3中任一項所述之光罩坯料的製造方法，其中，作為第一功能性膜，使用具有調整曝光光源的光學特性的功能的膜； 作為第二功能性膜，使用具有調整曝光光源的光學特性的功能且功能和第一功能性膜不同的膜。 The method for manufacturing a photomask blank according to any one of Claims 1 to 3, wherein, as the first functional film, a film having a function of adjusting the optical characteristics of the exposure light source is used; As the second functional film, a film having a function of adjusting the optical characteristics of the exposure light source and having a function different from that of the first functional film is used. 如請求項7所述之光罩坯料的製造方法，其中，作為第一功能性膜和第二功能性膜的任意一者，使用相移膜或者半色調膜； 作為第一功能性膜或者第二功能性膜的任意另一者，使用遮光膜。 The method for manufacturing a photomask blank according to claim 7, wherein, as any one of the first functional film and the second functional film, a phase shift film or a halftone film is used; A light-shielding film is used as either the first functional film or the second functional film. 如請求項1至3中任一項所述之光罩坯料的製造方法，其中，調整第一功能性膜和第二功能性膜的任意一者或兩者，使其蝕刻速率與第一功能性膜或者第二功能性膜的任意另一者相同。The method for manufacturing a photomask blank according to any one of Claims 1 to 3, wherein any one or both of the first functional film and the second functional film is adjusted so that its etching rate is consistent with the first functional film Any other of the functional film or the second functional film is the same. 一種光罩的製造方法，其特徵在於，包括： 光罩坯料準備步驟，準備藉由請求項1至9中任一項所述之光罩坯料的製造方法所製造的光罩坯料；及， 圖案化步驟，以規定的圖案對第一功能性膜以及第二功能性膜進行圖案化。 A method for manufacturing a photomask, comprising: A photomask blank preparation step, preparing a photomask blank manufactured by the method for manufacturing a photomask blank according to any one of Claims 1 to 9; and, In the patterning step, the first functional film and the second functional film are patterned in a predetermined pattern. 如請求項10所述之光罩的製造方法，其中，圖案化步驟包括僅一次的描繪步驟。The method for manufacturing a photomask as claimed in claim 10, wherein the patterning step includes only one drawing step. 如請求項10或11所述之光罩的製造方法，其中，圖案化步驟包括： 抗蝕劑膜形成步驟，在光罩坯料的表面形成抗蝕劑膜； 抗蝕劑圖案形成步驟，形成考慮了第一功能性膜以及第二功能性膜的蝕刻速率的差異的抗蝕劑圖案，該抗蝕劑圖案為規定的圖案的抗蝕劑圖案；及， 蝕刻步驟，將抗蝕劑圖案作為遮罩，藉由蝕刻去除第一功能性膜以及第二功能性膜的露出部分。 The method for manufacturing a photomask as claimed in item 10 or 11, wherein the patterning step includes: A resist film forming step, forming a resist film on the surface of the photomask blank; a resist pattern forming step of forming a resist pattern in consideration of a difference in etching rates between the first functional film and the second functional film, the resist pattern being a resist pattern of a predetermined pattern; and, In the etching step, using the resist pattern as a mask, the exposed parts of the first functional film and the second functional film are removed by etching.
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