TW202319392A - 表面處理劑、表面處理方法及基板表面之區域選擇性製膜方法 - Google Patents
表面處理劑、表面處理方法及基板表面之區域選擇性製膜方法 Download PDFInfo
- Publication number
- TW202319392A TW202319392A TW111127306A TW111127306A TW202319392A TW 202319392 A TW202319392 A TW 202319392A TW 111127306 A TW111127306 A TW 111127306A TW 111127306 A TW111127306 A TW 111127306A TW 202319392 A TW202319392 A TW 202319392A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- substrate
- surface treatment
- regions
- aforementioned
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 177
- 238000000034 method Methods 0.000 title claims abstract description 80
- 239000012756 surface treatment agent Substances 0.000 title claims abstract description 61
- 238000004381 surface treatment Methods 0.000 title claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 93
- 239000002184 metal Substances 0.000 claims abstract description 93
- 239000012212 insulator Substances 0.000 claims abstract description 74
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910001868 water Inorganic materials 0.000 claims abstract description 41
- 150000001875 compounds Chemical class 0.000 claims abstract description 33
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 24
- 239000003960 organic solvent Substances 0.000 claims abstract description 18
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 10
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- 125000001424 substituent group Chemical group 0.000 claims abstract description 5
- 125000004437 phosphorous atom Chemical group 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 239000005871 repellent Substances 0.000 abstract description 3
- 230000002940 repellent Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 70
- -1 phosphorus compound compound Chemical class 0.000 description 70
- 238000000231 atomic layer deposition Methods 0.000 description 44
- 239000010410 layer Substances 0.000 description 36
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 25
- 239000007789 gas Substances 0.000 description 21
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000002243 precursor Substances 0.000 description 15
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000002253 acid Substances 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 8
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 8
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 7
- 238000011282 treatment Methods 0.000 description 7
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 6
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- XUPYJHCZDLZNFP-UHFFFAOYSA-N butyl butanoate Chemical compound CCCCOC(=O)CCC XUPYJHCZDLZNFP-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- FTMKAMVLFVRZQX-UHFFFAOYSA-N octadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCCCCP(O)(O)=O FTMKAMVLFVRZQX-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 4
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- 229940116333 ethyl lactate Drugs 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 3
- 150000007522 mineralic acids Chemical class 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 150000003568 thioethers Chemical class 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- GETTZEONDQJALK-UHFFFAOYSA-N (trifluoromethyl)benzene Chemical compound FC(F)(F)C1=CC=CC=C1 GETTZEONDQJALK-UHFFFAOYSA-N 0.000 description 2
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N 1,3,5-trimethylbenzene Chemical compound CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- VKPSKYDESGTTFR-UHFFFAOYSA-N 2,2,4,6,6-pentamethylheptane Chemical compound CC(C)(C)CC(C)CC(C)(C)C VKPSKYDESGTTFR-UHFFFAOYSA-N 0.000 description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 2
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 2
- TZYRSLHNPKPEFV-UHFFFAOYSA-N 2-ethyl-1-butanol Chemical compound CCC(CC)CO TZYRSLHNPKPEFV-UHFFFAOYSA-N 0.000 description 2
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- QPRQEDXDYOZYLA-UHFFFAOYSA-N 2-methylbutan-1-ol Chemical compound CCC(C)CO QPRQEDXDYOZYLA-UHFFFAOYSA-N 0.000 description 2
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical class O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- HXQPUEQDBSPXTE-UHFFFAOYSA-N Diisobutylcarbinol Chemical compound CC(C)CC(O)CC(C)C HXQPUEQDBSPXTE-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- RZKSECIXORKHQS-UHFFFAOYSA-N Heptan-3-ol Chemical compound CCCCC(O)CC RZKSECIXORKHQS-UHFFFAOYSA-N 0.000 description 2
- ZCZSIDMEHXZRLG-UHFFFAOYSA-N Heptyl acetate Chemical compound CCCCCCCOC(C)=O ZCZSIDMEHXZRLG-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- FFOPEPMHKILNIT-UHFFFAOYSA-N Isopropyl butyrate Chemical compound CCCC(=O)OC(C)C FFOPEPMHKILNIT-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 235000019445 benzyl alcohol Nutrition 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- CRPUJAZIXJMDBK-UHFFFAOYSA-N camphene Chemical compound C1CC2C(=C)C(C)(C)C1C2 CRPUJAZIXJMDBK-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 150000004673 fluoride salts Chemical class 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 150000002357 guanidines Chemical class 0.000 description 2
- 229940083094 guanine derivative acting on arteriolar smooth muscle Drugs 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- AOGQPLXWSUTHQB-UHFFFAOYSA-N hexyl acetate Chemical compound CCCCCCOC(C)=O AOGQPLXWSUTHQB-UHFFFAOYSA-N 0.000 description 2
- 230000000887 hydrating effect Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 150000003951 lactams Chemical class 0.000 description 2
- 150000002596 lactones Chemical class 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- MWTNDITWYWAGLW-UHFFFAOYSA-N methanol 4-methylpentan-2-ol Chemical compound CO.CC(O)CC(C)C MWTNDITWYWAGLW-UHFFFAOYSA-N 0.000 description 2
- YRHYCMZPEVDGFQ-UHFFFAOYSA-N methyl decanoate Chemical compound CCCCCCCCCC(=O)OC YRHYCMZPEVDGFQ-UHFFFAOYSA-N 0.000 description 2
- JGHZJRVDZXSNKQ-UHFFFAOYSA-N methyl octanoate Chemical compound CCCCCCCC(=O)OC JGHZJRVDZXSNKQ-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- CHJJGSNFBQVOTG-UHFFFAOYSA-N methylguanidine Chemical compound CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- YLYBTZIQSIBWLI-UHFFFAOYSA-N octyl acetate Chemical compound CCCCCCCCOC(C)=O YLYBTZIQSIBWLI-UHFFFAOYSA-N 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 2
- CFJYNSNXFXLKNS-UHFFFAOYSA-N p-menthane Chemical compound CC(C)C1CCC(C)CC1 CFJYNSNXFXLKNS-UHFFFAOYSA-N 0.000 description 2
- PGMYKACGEOXYJE-UHFFFAOYSA-N pentyl acetate Chemical compound CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 2
- XOKSLPVRUOBDEW-UHFFFAOYSA-N pinane Chemical compound CC1CCC2C(C)(C)C1C2 XOKSLPVRUOBDEW-UHFFFAOYSA-N 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 2
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000013545 self-assembled monolayer Substances 0.000 description 2
- 150000003505 terpenes Chemical class 0.000 description 2
- 235000007586 terpenes Nutrition 0.000 description 2
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- GGTSAXBNFONRAB-UHFFFAOYSA-N (1-methyl-2-phenyl-4-propan-2-ylcyclohexyl)benzene Chemical compound C1C(C(C)C)CCC(C)(C=2C=CC=CC=2)C1C1=CC=CC=C1 GGTSAXBNFONRAB-UHFFFAOYSA-N 0.000 description 1
- WMUZDBZPDLHUMW-UHFFFAOYSA-N (2-nitrophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC=C1[N+]([O-])=O WMUZDBZPDLHUMW-UHFFFAOYSA-N 0.000 description 1
- RYNQKSJRFHJZTK-UHFFFAOYSA-N (3-methoxy-3-methylbutyl) acetate Chemical compound COC(C)(C)CCOC(C)=O RYNQKSJRFHJZTK-UHFFFAOYSA-N 0.000 description 1
- OWSKJORLRSWYGK-UHFFFAOYSA-N (3-methoxy-3-methylbutyl) propanoate Chemical compound CCC(=O)OCCC(C)(C)OC OWSKJORLRSWYGK-UHFFFAOYSA-N 0.000 description 1
- NQOFYFRKWDXGJP-UHFFFAOYSA-N 1,1,2-trimethylguanidine Chemical compound CN=C(N)N(C)C NQOFYFRKWDXGJP-UHFFFAOYSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- LINDOXZENKYESA-UHFFFAOYSA-N 1,2-dimethylguanidine Chemical compound CNC(N)=NC LINDOXZENKYESA-UHFFFAOYSA-N 0.000 description 1
- YJUUZFWMKJBVFJ-UHFFFAOYSA-N 1,3-dimethylimidazolidin-4-one Chemical compound CN1CN(C)C(=O)C1 YJUUZFWMKJBVFJ-UHFFFAOYSA-N 0.000 description 1
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 1
- LZEFLPFLUMQUPG-UHFFFAOYSA-N 1-(2-hydroxyethoxy)-2-methylbutan-2-ol Chemical compound CC(COCCO)(CC)O LZEFLPFLUMQUPG-UHFFFAOYSA-N 0.000 description 1
- NIOYEYDJTAEDFH-UHFFFAOYSA-N 1-(2-hydroxyethoxy)-2-methylpropan-2-ol Chemical compound CC(C)(O)COCCO NIOYEYDJTAEDFH-UHFFFAOYSA-N 0.000 description 1
- PJEXUIKBGBSHBS-UHFFFAOYSA-N 1-(hydroxymethyl)pyrrolidin-2-one Chemical compound OCN1CCCC1=O PJEXUIKBGBSHBS-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- LIRNFNXOTBZTPP-UHFFFAOYSA-N 1-[2-(2-hydroxyethoxy)ethoxy]-2-methylpropan-2-ol Chemical compound CC(C)(O)COCCOCCO LIRNFNXOTBZTPP-UHFFFAOYSA-N 0.000 description 1
- SNAQINZKMQFYFV-UHFFFAOYSA-N 1-[2-[2-(2-methoxyethoxy)ethoxy]ethoxy]butane Chemical compound CCCCOCCOCCOCCOC SNAQINZKMQFYFV-UHFFFAOYSA-N 0.000 description 1
- HNAGHMKIPMKKBB-UHFFFAOYSA-N 1-benzylpyrrolidine-3-carboxamide Chemical compound C1C(C(=O)N)CCN1CC1=CC=CC=C1 HNAGHMKIPMKKBB-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- WAPNOHKVXSQRPX-UHFFFAOYSA-N 1-phenylethanol Chemical compound CC(O)C1=CC=CC=C1 WAPNOHKVXSQRPX-UHFFFAOYSA-N 0.000 description 1
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 1
- DCALJVULAGICIX-UHFFFAOYSA-N 1-propylpyrrolidin-2-one Chemical compound CCCN1CCCC1=O DCALJVULAGICIX-UHFFFAOYSA-N 0.000 description 1
- VCLJODPNBNEBKW-UHFFFAOYSA-N 2,2,4,4,6,8,8-heptamethylnonane Chemical compound CC(C)(C)CC(C)CC(C)(C)CC(C)(C)C VCLJODPNBNEBKW-UHFFFAOYSA-N 0.000 description 1
- 229940043268 2,2,4,4,6,8,8-heptamethylnonane Drugs 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- WMDZKDKPYCNCDZ-UHFFFAOYSA-N 2-(2-butoxypropoxy)propan-1-ol Chemical compound CCCCOC(C)COC(C)CO WMDZKDKPYCNCDZ-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- LFGALYJNBGSYMZ-UHFFFAOYSA-N 2-(2-hydroxyethylphosphanyl)ethanol Chemical compound OCCPCCO LFGALYJNBGSYMZ-UHFFFAOYSA-N 0.000 description 1
- BJINVQNEBGOMCR-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethyl acetate Chemical compound COCCOCCOC(C)=O BJINVQNEBGOMCR-UHFFFAOYSA-N 0.000 description 1
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 description 1
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- FMVOPJLFZGSYOS-UHFFFAOYSA-N 2-[2-(2-ethoxypropoxy)propoxy]propan-1-ol Chemical compound CCOC(C)COC(C)COC(C)CO FMVOPJLFZGSYOS-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 1
- PFNHSEQQEPMLNI-UHFFFAOYSA-N 2-methyl-1-pentanol Chemical compound CCCC(C)CO PFNHSEQQEPMLNI-UHFFFAOYSA-N 0.000 description 1
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 description 1
- BRRVXFOKWJKTGG-UHFFFAOYSA-N 3,3,5-trimethylcyclohexanol Chemical compound CC1CC(O)CC(C)(C)C1 BRRVXFOKWJKTGG-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- NTKBNCABAMQDIG-UHFFFAOYSA-N 3-butoxypropan-1-ol Chemical compound CCCCOCCCO NTKBNCABAMQDIG-UHFFFAOYSA-N 0.000 description 1
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 1
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 1
- QMYGFTJCQFEDST-UHFFFAOYSA-N 3-methoxybutyl acetate Chemical compound COC(C)CCOC(C)=O QMYGFTJCQFEDST-UHFFFAOYSA-N 0.000 description 1
- LAIUFBWHERIJIH-UHFFFAOYSA-N 3MC7 Natural products CCCCC(C)CC LAIUFBWHERIJIH-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- UQRONKZLYKUEMO-UHFFFAOYSA-N 4-methyl-1-(2,4,6-trimethylphenyl)pent-4-en-2-one Chemical group CC(=C)CC(=O)Cc1c(C)cc(C)cc1C UQRONKZLYKUEMO-UHFFFAOYSA-N 0.000 description 1
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 1
- MQWCXKGKQLNYQG-UHFFFAOYSA-N 4-methylcyclohexan-1-ol Chemical compound CC1CCC(O)CC1 MQWCXKGKQLNYQG-UHFFFAOYSA-N 0.000 description 1
- 125000000590 4-methylphenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- OPFTUNCRGUEPRZ-QLFBSQMISA-N Cyclohexane Natural products CC(=C)[C@@H]1CC[C@@](C)(C=C)[C@H](C(C)=C)C1 OPFTUNCRGUEPRZ-QLFBSQMISA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- AQZGPSLYZOOYQP-UHFFFAOYSA-N Diisoamyl ether Chemical compound CC(C)CCOCCC(C)C AQZGPSLYZOOYQP-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- UDSFAEKRVUSQDD-UHFFFAOYSA-N Dimethyl adipate Chemical compound COC(=O)CCCCC(=O)OC UDSFAEKRVUSQDD-UHFFFAOYSA-N 0.000 description 1
- XXRCUYVCPSWGCC-UHFFFAOYSA-N Ethyl pyruvate Chemical compound CCOC(=O)C(C)=O XXRCUYVCPSWGCC-UHFFFAOYSA-N 0.000 description 1
- IAJILQKETJEXLJ-UHFFFAOYSA-N Galacturonsaeure Natural products O=CC(O)C(O)C(O)C(O)C(O)=O IAJILQKETJEXLJ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910004140 HfO Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- XOBKSJJDNFUZPF-UHFFFAOYSA-N Methoxyethane Chemical compound CCOC XOBKSJJDNFUZPF-UHFFFAOYSA-N 0.000 description 1
- 239000005640 Methyl decanoate Substances 0.000 description 1
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- PXRCIOIWVGAZEP-UHFFFAOYSA-N Primaeres Camphenhydrat Natural products C1CC2C(O)(C)C(C)(C)C1C2 PXRCIOIWVGAZEP-UHFFFAOYSA-N 0.000 description 1
- FCLZCOCSZQNREK-UHFFFAOYSA-N Pyrrolidine, hydrochloride Chemical compound Cl.C1CCNC1 FCLZCOCSZQNREK-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910007926 ZrCl Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- IAJILQKETJEXLJ-QTBDOELSSA-N aldehydo-D-glucuronic acid Chemical compound O=C[C@H](O)[C@@H](O)[C@H](O)[C@H](O)C(O)=O IAJILQKETJEXLJ-QTBDOELSSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- XCPQUQHBVVXMRQ-UHFFFAOYSA-N alpha-Fenchene Natural products C1CC2C(=C)CC1C2(C)C XCPQUQHBVVXMRQ-UHFFFAOYSA-N 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- PGWTYMLATMNCCZ-UHFFFAOYSA-M azure A Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 PGWTYMLATMNCCZ-UHFFFAOYSA-M 0.000 description 1
- 125000002511 behenyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- MBXXQYJBFRRFCK-UHFFFAOYSA-N benzyl fluoride Chemical compound FCC1=CC=CC=C1 MBXXQYJBFRRFCK-UHFFFAOYSA-N 0.000 description 1
- YOUGRGFIHBUKRS-UHFFFAOYSA-N benzyl(trimethyl)azanium Chemical compound C[N+](C)(C)CC1=CC=CC=C1 YOUGRGFIHBUKRS-UHFFFAOYSA-N 0.000 description 1
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 1
- VEZXCJBBBCKRPI-UHFFFAOYSA-N beta-propiolactone Chemical compound O=C1CCO1 VEZXCJBBBCKRPI-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- OBNCKNCVKJNDBV-UHFFFAOYSA-N butanoic acid ethyl ester Natural products CCCC(=O)OCC OBNCKNCVKJNDBV-UHFFFAOYSA-N 0.000 description 1
- BTMVHUNTONAYDX-UHFFFAOYSA-N butyl propionate Chemical compound CCCCOC(=O)CC BTMVHUNTONAYDX-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229930006739 camphene Natural products 0.000 description 1
- ZYPYEBYNXWUCEA-UHFFFAOYSA-N camphenilone Natural products C1CC2C(=O)C(C)(C)C1C2 ZYPYEBYNXWUCEA-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- RLGQACBPNDBWTB-UHFFFAOYSA-N cetyltrimethylammonium ion Chemical compound CCCCCCCCCCCCCCCC[N+](C)(C)C RLGQACBPNDBWTB-UHFFFAOYSA-N 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 125000002592 cumenyl group Chemical group C1(=C(C=CC=C1)*)C(C)C 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- ZJHQDSMOYNLVLX-UHFFFAOYSA-N diethyl(dimethyl)azanium Chemical class CC[N+](C)(C)CC ZJHQDSMOYNLVLX-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- VZZJVOCVAZHETD-UHFFFAOYSA-N diethylphosphane Chemical compound CCPCC VZZJVOCVAZHETD-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 1
- DWCMDRNGBIZOQL-UHFFFAOYSA-N dimethylazanide;zirconium(4+) Chemical compound [Zr+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C DWCMDRNGBIZOQL-UHFFFAOYSA-N 0.000 description 1
- YOTZYFSGUCFUKA-UHFFFAOYSA-N dimethylphosphine Chemical compound CPC YOTZYFSGUCFUKA-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- SVMUEEINWGBIPD-UHFFFAOYSA-N dodecylphosphonic acid Chemical compound CCCCCCCCCCCCP(O)(O)=O SVMUEEINWGBIPD-UHFFFAOYSA-N 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- CKSRFHWWBKRUKA-UHFFFAOYSA-N ethyl 2-ethoxyacetate Chemical compound CCOCC(=O)OCC CKSRFHWWBKRUKA-UHFFFAOYSA-N 0.000 description 1
- GFUIDHWFLMPAGY-UHFFFAOYSA-N ethyl 2-hydroxy-2-methylpropanoate Chemical compound CCOC(=O)C(C)(C)O GFUIDHWFLMPAGY-UHFFFAOYSA-N 0.000 description 1
- ZANNOFHADGWOLI-UHFFFAOYSA-N ethyl 2-hydroxyacetate Chemical compound CCOC(=O)CO ZANNOFHADGWOLI-UHFFFAOYSA-N 0.000 description 1
- FJAKCEHATXBFJT-UHFFFAOYSA-N ethyl 2-oxobutanoate Chemical compound CCOC(=O)C(=O)CC FJAKCEHATXBFJT-UHFFFAOYSA-N 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229940117360 ethyl pyruvate Drugs 0.000 description 1
- YOMFVLRTMZWACQ-UHFFFAOYSA-N ethyltrimethylammonium Chemical compound CC[N+](C)(C)C YOMFVLRTMZWACQ-UHFFFAOYSA-N 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229940097043 glucuronic acid Drugs 0.000 description 1
- 229940093915 gynecological organic acid Drugs 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 description 1
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 1
- 229940011051 isopropyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- YSGBMDFJWFIEDF-UHFFFAOYSA-N methyl 2-hydroxy-3-methylbutanoate Chemical compound COC(=O)C(O)C(C)C YSGBMDFJWFIEDF-UHFFFAOYSA-N 0.000 description 1
- HSDFKDZBJMDHFF-UHFFFAOYSA-N methyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OC HSDFKDZBJMDHFF-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- CWKLZLBVOJRSOM-UHFFFAOYSA-N methyl pyruvate Chemical compound COC(=O)C(C)=O CWKLZLBVOJRSOM-UHFFFAOYSA-N 0.000 description 1
- VFOJFWOVDZGATC-UHFFFAOYSA-N methyl(tripropyl)azanium Chemical compound CCC[N+](C)(CCC)CCC VFOJFWOVDZGATC-UHFFFAOYSA-N 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- WHIVNJATOVLWBW-SNAWJCMRSA-N methylethyl ketone oxime Chemical compound CC\C(C)=N\O WHIVNJATOVLWBW-SNAWJCMRSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229940094933 n-dodecane Drugs 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- SSCVMVQLICADPI-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)silyl]methanamine Chemical compound CN(C)[Si](N(C)C)(N(C)C)N(C)C SSCVMVQLICADPI-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical compound C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
- 230000000414 obstructive effect Effects 0.000 description 1
- SJWFXCIHNDVPSH-UHFFFAOYSA-N octan-2-ol Chemical compound CCCCCCC(C)O SJWFXCIHNDVPSH-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229930004008 p-menthane Natural products 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical class O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229930006728 pinane Natural products 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229960000380 propiolactone Drugs 0.000 description 1
- FKRCODPIKNYEAC-UHFFFAOYSA-N propionic acid ethyl ester Natural products CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 1
- ILPVOWZUBFRIAX-UHFFFAOYSA-N propyl 2-oxopropanoate Chemical compound CCCOC(=O)C(C)=O ILPVOWZUBFRIAX-UHFFFAOYSA-N 0.000 description 1
- HUAZGNHGCJGYNP-UHFFFAOYSA-N propyl butyrate Chemical compound CCCOC(=O)CCC HUAZGNHGCJGYNP-UHFFFAOYSA-N 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- AOJFQRQNPXYVLM-UHFFFAOYSA-N pyridin-1-ium;chloride Chemical compound [Cl-].C1=CC=[NH+]C=C1 AOJFQRQNPXYVLM-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000002094 self assembled monolayer Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 229960001367 tartaric acid Drugs 0.000 description 1
- 229930006978 terpinene Natural products 0.000 description 1
- 150000003507 terpinene derivatives Chemical class 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- BRGJIIMZXMWMCC-UHFFFAOYSA-N tetradecan-2-ol Chemical compound CCCCCCCCCCCCC(C)O BRGJIIMZXMWMCC-UHFFFAOYSA-N 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- OSBSFAARYOCBHB-UHFFFAOYSA-N tetrapropylammonium Chemical compound CCC[N+](CCC)(CCC)CCC OSBSFAARYOCBHB-UHFFFAOYSA-N 0.000 description 1
- 150000000552 thionines Chemical class 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- HJHUXWBTVVFLQI-UHFFFAOYSA-N tributyl(methyl)azanium Chemical compound CCCC[N+](C)(CCCC)CCCC HJHUXWBTVVFLQI-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- XMUJIPOFTAHSOK-UHFFFAOYSA-N undecan-2-ol Chemical compound CCCCCCCCCC(C)O XMUJIPOFTAHSOK-UHFFFAOYSA-N 0.000 description 1
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/28—Phosphorus compounds with one or more P—C bonds
- C07F9/30—Phosphinic acids [R2P(=O)(OH)]; Thiophosphinic acids ; [R2P(=X1)(X2H) (X1, X2 are each independently O, S or Se)]
- C07F9/301—Acyclic saturated acids which can have further substituents on alkyl
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Materials Applied To Surfaces To Minimize Adherence Of Mist Or Water (AREA)
- ing And Chemical Polishing (AREA)
- Chemical Treatment Of Metals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
本發明的課題為提供一種對於包含接近之金屬區域與絕緣體區域的基板表面,可抑制絕緣體區域的撥水化,並可更有選擇性撥水化金屬區域之表面處理劑、表面處理方法及基板表面之區域選擇性製膜方法。
本發明的解決手段為使用一種表面處理劑,其係為了處理基板的表面而使用之表面處理劑,其特徵為前述表面包含二個以上的區域,二個以上之前述區域包含至少一個的金屬區域、與至少一個的絕緣體區域,並且二個以上之前述區域當中之至少一個的前述金屬區域、與至少一個的前述絕緣體區域彼此接近,
包含下述一般式(P-1)表示之化合物(P)及有機溶劑(S),
[式中,R
1及R
2分別獨立為與磷原子鍵結,且可具有氫原子、烷基、氟化烷基或取代基之芳香族烴基,惟,R
1及R
2不會同時為氫原子]。
Description
本發明係關於表面處理劑、表面處理方法及基板表面之區域選擇性製膜方法。
近年來,半導體裝置之高集積化、微小化的傾向正高漲。伴隨此,成為遮罩之經圖型化的有機膜或藉由蝕刻處理所製作之經圖型化的無機膜的微細化正進展。因此,有關形成在半導體基板上之有機膜或無機膜,正尋求原子層等級之膜厚控制。
於基板上以原子層等級形成薄膜之方法,已知有原子層成長法(ALD(Atomic Layer Deposition)法;以下,亦單稱為「ALD法」)。ALD法與一般的CVD(Chemical Vapor Deposition)法比較,已知一併具有高段差被覆性(Step coverage)與膜厚控制性。
ALD法係於基板上交替供給將構成所欲形成之膜的元素作為主成分之2種類的氣體,並重複複數次於基板上以原子層單位形成薄膜,而形成所期望的厚度之膜的薄膜形成技術。
於ALD法,係利用於供給原料氣體之間,除了僅形成1層或數層之原子層程度之原料氣體的成分,被吸附在基板表面之外,多餘之原料氣體無助於成長之所謂成長的自我控制機能(Self-limited function)。
例如,於基板上形成Al
2O
3膜時,係使用由TMA (TriMethyl Aluminum)所構成之原料氣體與包含O之氧化氣體。又,於基板上形成氮化膜時,取代氧化氣體,改使用氮化氣體。
近年來,正利用ALD法,嘗試於基板表面之區域選擇性製膜(參照專利文獻1及非專利文獻1)。
伴隨此,正尋求有可適合適用在藉由於ALD法之基板上的區域選擇性製膜般,具有區域選擇性改質的表面之基板。
作為得到具有這般的區域選擇性改質的表面之基板之方法,揭示有例如使用十二烷基膦酸或十八烷基膦酸,金屬基板與絕緣體基板當中,選擇性撥水化前者之方法(參照專利文獻2)。惟,關於對於絕緣體基板,更加選擇性撥水化金屬基板,尚有改善的餘地。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特表2003-508897號公報
[專利文獻2]日本特開2021-014631號公報
[非專利文獻]
[非專利文獻1]J.Phys.Chem.C 2014,118,10957-10962
[發明欲解決之課題]
本發明係鑑於以上之狀況而完成者,以提供一種相對於包含接近之金屬區域與絕緣體區域的基板表面,可抑制絕緣體區域的撥水化,並可更加選擇性撥水化金屬區域之表面處理劑、表面處理方法及基板表面之區域選擇性製膜方法作為目的。
[用以解決課題之手段]
本發明者們發現藉由使用其係為了處理基板的表面而使用之表面處理劑,其特徵為前述表面包含二個以上的區域,二個以上之前述區域包含至少一個的金屬區域、與至少一個的絕緣體區域,並且二個以上之前述區域當中之至少一個的前述金屬區域、與至少一個的前述絕緣體區域彼此接近,並含有特定之構造的磷化合物之化合物(P)及有機溶劑(S)的表面處理劑,可解決上述之課題,而完成本發明。
本發明之第1態樣為一種表面處理劑,其係為了處理基板的表面而使用之表面處理劑,其特徵為:
上述表面包含二個以上的區域,
二個以上之上述區域包含至少一個的金屬區域、與至少一個的絕緣體區域,
並且二個以上之上述區域當中之至少一個的上述金屬區域、與至少一個的上述絕緣體區域彼此接近,
並含有下述一般式(P-1)表示之化合物(P)及有機溶劑(S),
[式中,R
1及R
2分別獨立為與磷原子鍵結,且可具有氫原子、烷基、氟化烷基或取代基之芳香族烴基,惟,R
1及R
2不會同時為氫原子]。
本發明之第2態樣為一種表面處理方法,其係對於基板的表面之表面處理方法,其特徵為:
上述表面包含二個以上的區域,
二個以上之上述區域包含至少一個的金屬區域、與至少一個的絕緣體區域,
並且二個以上之上述區域當中之至少一個的上述金屬區域、與至少一個的上述絕緣體區域彼此接近,
包含將上述表面曝露在有關第1態樣之表面處理劑,
藉由上述化合物(P)、與上述區域的反應,將上述金屬區域之水的接觸角較接近上述金屬區域之上述絕緣體區域之水的接觸角更提高10°以上。
本發明之第3態樣為一種基板表面之區域選擇性製膜方法,其係包含藉由有關第2態樣之表面處理方法,處理上述基板之上述表面、與
於經表面處理之上述基板的表面,藉由原子層成長法形成膜,
於上述絕緣體區域上較上述金屬區域上堆積更多上述膜的材料。
[發明效果]
根據本發明,可提供一種相對於包含接近之金屬區域與絕緣體區域的基板表面,可抑制絕緣體區域的撥水化,並可更加選擇性撥水化金屬區域之表面處理劑、使用該表面處理劑之表面處理方法,及使用該表面處理方法之基板表面之區域選擇性製膜方法。
<表面處理劑>
表面處理劑係為了處理基板的表面而使用。
基板的表面包含二個以上的區域。二個以上之上述區域包含至少一個的金屬區域、與至少一個的絕緣體區域。二個以上之上述區域當中之至少一個的上述金屬區域、與至少一個的上述絕緣體區域彼此接近。於此,所謂接近,係包含至少一個的上述金屬區域、與至少一個的上述絕緣體區域共有邊界線並相鄰的情況,或未共有邊界線構成在相鄰或離間的位置的情況。
表面處理劑係含有下述一般式(P-1)表示之化合物(P)及有機溶劑(S),
[式中,R
1及R
2分別獨立為與磷原子鍵結,且可具有氫原子、烷基、氟化烷基或取代基之芳香族烴基,惟,R
1及R
2不會同時為氫原子]。
藉由使用上述的表面處理劑,表面處理基板的表面,對於包含接近之金屬區域與絕緣體區域的基板表面,可抑制絕緣體區域的撥水化,並更可有選擇性撥水化金屬區域。
(基板及基板表面)
作為成為表面處理的對象之「基板」,例示有為了半導體裝置製作而使用之基板。作為該基板,例如可列舉矽(Si)基板、氮化矽(SiN)基板、矽氧化膜(SiOx)基板、鎢(W)基板、鈷(Co)基板、鍺(Ge)基板、鋁(Al)基板、鎳(Ni)基板、釕(Ru)基板、銅(Cu)基板、氮化鈦(TiN)基板、氮化鉭(TaN)基板、矽鍺(SiGe)基板等。
所謂「基板的表面」,除了基板本身的表面之外,亦可列舉設置在基板上之經圖型化的無機層及未經圖型化之無機層的表面,作為經圖型化之無機層的表面,定為實質上包含在圖型的側面或表面者。
作為設置在基板上之經圖型化的無機層,例示有藉由光阻法於依存在基板之無機層的表面製作蝕刻遮罩,然後,藉由蝕刻處理所形成之經圖型化的無機層、藉由原子層成長法(ALD法),形成在基板的表面之經圖型化的無機層。尚,即使是在藉由該ALD法,而得到形成在基板的表面之經圖型化的無機層的情況下,亦可使用本實施形態的表面處理劑。藉由使用本實施形態的表面處理劑,作為無機層,可確保相當於金屬區域之區域與相當於絕緣體區域之區域的選擇性。作為無機層,基板本身之外,例示有構成基板之元素的氧化膜、形成在基板的表面之氮化矽(SiN)、矽氧化膜(SiOx)、鎢(W)、鈷(Co)、鍺(Ge)、鋁(Al)、鎳(Ni)、釕(Ru)、銅(Cu)、銀(Ag)、鈦(Ti)、金(Au)、鉻(Cr)、鉬(Mo)、氧化鋁(Al
2O
3)、氧化鈦(TiO
2)、氧化鋯(ZrO
2)、氧化鉿(HfO
2)、氧化鉭(Ta
2O
5)、氮化鈦(TiN)、氮化鉭(TaN)、矽鍺(SiGe)、氧化矽(SiO
2)等之無機物的膜或層等。
作為這般的膜或層,雖並未特別限定,但例示有在半導體裝置的製作過程所形成之無機物的膜或層等。
作為設置在基板上之未經圖型化的無機層,例示有由與設置在基板上之經圖型化的上述無機層為相同材質所構成之無機物的膜或層等。
(基板表面之前處理)
基板表面較佳為進行前處理。
作為前處理基板表面之處理劑(以下,有時稱為「前處理劑」),若為去除存在於基板表面之自然氧化膜,並為可對基板表面賦予羥基者,則並未被特別限定。藉由預先賦予羥基,提昇以有關本發明之表面處理劑處理後之基板表面的撥水性。作為前處理劑,具體而言,可列舉過氧化氫等之過氧化物、過碘酸等之過鹵素酸、硝酸或次氯酸等之含氧酸、磷酸、檸檬酸、乙酸或氫氟酸(HF)等。前處理劑若藉由使用之基板的種類適當選擇即可,例如,為包含W或Ru之基板的情況,較佳為選自由過氧化氫及過鹵素酸所成群組中之至少1種。又,選自由過氧化氫及過鹵素酸所成群組中之至少1種為SiO
2、Al
2O
3等之無機物併存在基板表面時,從不會對該無機物給予損害,來處理金屬表面的觀點來看亦佳。另一方面,為包含Cu之基板時,從自然氧化膜去除性與基板表面的親水性提昇的點來看,作為前處理劑,較佳為使用HF水溶液、乙酸、檸檬酸、磷酸或硝酸等。
前處理劑可1種單獨使用,亦可使用2種以上。
(金屬區域及絕緣體區域)
金屬區域係由金屬或導電性之含金屬化合物所構成。金屬區域可相對於後述之絕緣體區域定義為導電體區域。作為金屬或導電性之含金屬化合物,上述無機物當中,較佳為銅(Cu)、鈷(Co)、鋁(Al)、銀(Ag)、鎳(Ni)、鈦(Ti)、金(Au)、鉻(Cr)、鉬(Mo)、鎢(W)、釕(Ru)、氮化鈦(TiN)、氮化鉭(TaN)等。
絕緣體區域係由選自由氧化物、氮化物、碳化物、碳氮化物、氧氮化物、氧碳氮化物及絕緣性樹脂所成群組中之1種以上之絕緣性之化合物所構成,較佳為氧化物、氮化物、碳化物、碳氮化物、氧氮化物或氧碳氮化物。作為氧化物,較佳為氧化鋁(Al
2O
3)、氧化鈦(TiO
2)、氧化鋯(ZrO
2)、氧化鉿(HfO
2)、氧化鉭(Ta
2O
5)、氧化矽(SiOx(1≦X≦2))、含有氟之氧化矽(SiOF)、含有碳之氧化矽(SiOC)。作為氮化物,較佳為例如氮化矽(SiN)、氮化硼(BN)。作為碳化物,較佳為碳化矽(SiC)。作為碳氮化物,較佳為碳氮化矽(SiCN)。作為氧氮化物,較佳為氧氮化矽(SiON)。作為氧碳氮化物,較佳為氧碳氮化矽(SiOCN)。作為絕緣性樹脂,可列舉聚醯亞胺、聚酯、塑膠樹脂等。
(基板表面由2個的區域所構成之態樣)
作為由2個的區域所構成之基板表面的態樣,例如可列舉將上述2個的區域當中之1個的區域定為第1區域之金屬區域,將與其接近的區域定為第2區域之絕緣體區域的態樣。於此,第1區域及第2區域亦可分別分割成亦可不分割成複數的區域。
作為第1區域及第2區域之例,例如可列舉將基板本身的表面定為第1區域之金屬區域,將形成在由基板的表面之絕緣體所構成之層定為第2區域之絕緣體區域的態樣、將基板本身的表面定為第1區域之絕緣體區域,將形成在由基板的表面之金屬所構成之層定為第2區域之金屬區域的態樣、將形成在由基板的表面之金屬所構成之層定為第1區域之金屬區域,將形成在由基板的表面之絕緣體所構成之層定為第2區域之絕緣體區域的態樣、將絕緣體之基板的表面的一部分定為第1區域之金屬區域,將形成在由並非該金屬區域之基板的表面的至少一部分之絕緣體所構成之層及/或並非該金屬區域之基板表面的至少一部分(或並非金屬區域之基板表面全部)定為第2區域之絕緣體區域的態樣等。
(基板表面由3個以上的區域所構成之態樣)
作為由3個以上的區域所構成之基板表面的態樣,例如可列舉將上述二個以上的區域當中之1個的區域定為第1區域之金屬區域,將與其接近之區域定為第2區域之絕緣體區域,進而將與第2絕緣體區域接近之區域定為第3區域之金屬區域的態樣、將上述二個以上的區域當中之1個的區域定為第1區域之絕緣體區域,將與其接近之區域定為第2區域之金屬區域,進而將與第2金屬區域接近之區域定為第3區域之絕緣體區域的態樣、將上述二個以上的區域當中之1個的區域定為第1區域之金屬區域,將與其接近之區域定為第2區域之金屬區域,進而將與第2金屬區域接近之區域定為第3區域之絕緣體區域的態樣。
於此,於第1區域與第3區域材質不同。
又,第1區域、第2區域及第3區域可分別分割亦可不分割成複數的區域。
作為第1區域、第2區域及第3區域之例,例如可列舉將基板本身的表面定為第1區域之金屬區域,將與該基板接近,並形成在該基板的表面之絕緣體區域的表面定為第2區域,將與第2區域接近,並形成在該基板的表面之金屬區域的表面定為第3區域的態樣、將基板本身的表面定為第1區域之絕緣體區域,將與該基板接近,並形成在該基板的表面之金屬區域的表面定為第2區域,將與第2區域接近,並形成在該基板的表面之絕緣體區域的表面定為第3區域的態樣等。
即使對於存在第4以上的區域的情況下,亦可適用相同的思考方式。
作為材質不同的區域數的上限值,只要不損害本發明的效果,雖並未特別限定,但例如為7以下或6以下,通常而言,為5以下。
(化合物(P))
化合物(P)為次磷酸衍生物。化合物(P)係部位[HO-P(=O)-]為親水性,部位[-R
1]及部位[-R
2]分別為疏水性。因此,除了相對於包含接近之金屬區域與絕緣體區域的基板表面,部位[HO-P(=O)-]被用作對金屬區域之吸附基之外,並推測部位[-R
1]及部位[-R
2]用作撥水基。因此,化合物(P)係用作形成自我組織化單分子膜(self-assembled monolayer)之材料(SAM劑)。
在式(P-1)表示之化合物(P),較佳為作為R
1及R
2之烷基的至少一者為碳原子數8以上之直鏈或分枝鏈狀的烷基。作為R
1及R
2之烷基之碳原子數的上限雖並未特別限定,但通常而言,可為50以下,亦可為30以下。
作為R
1及R
2之烷基的合適之具體例,例如可列舉甲基、乙基、n-丙基、n-丁基、n-戊基、n-己基、n-庚基、n-辛基、n-壬基、n-癸基、n-十一烷基、n-十二烷基、n-十三烷基、n-十四烷基、n-十五烷基、n-十六烷基、n-十七烷基、n-十八烷基、n-十九烷基、n-二十烷基、n-二十一烷基及n-二十二烷基,以及與此等之烷基有構造異構之關係的烷基。
作為R
1及R
2之烷基的至少一者較佳為選自與n-辛基、n-壬基、n-癸基、n-十一烷基、n-十二烷基、n-十三烷基、n-十四烷基、n-十五烷基、n-十六烷基、n-十七烷基、n-十八烷基、n-十九烷基、n-二十烷基、n-二十一烷基及n-二十二烷基,以及與此等之烷基有構造異構之關係的烷基中之基。
在式(P-1)表示之化合物(P),作為R
1及R
2之氟化烷基,較佳為碳原子數8以上之直鏈或分枝鏈狀的氟化烷基。
作為R
1及R
2之氟化烷基的合適之具體例,可列舉上述所例示之R
1及R
2之烷基之氫原子的一部分或全部被氟原子取代之基。
在式(P-1)表示之化合物(P),作為R
1及R
2之具有取代基之芳香族烴基,例如可列舉苯基、萘基、蒽基、p-甲基苯基、p-tert-丁基苯基、p-金剛烷基苯基、甲苯基、二甲苯基、枯烯基、均三甲苯基、聯苯基、菲基、2,6-二乙基苯基、2-甲基-6-乙基苯基。
其中,R
1及R
2當中,較佳為一者為氫原子,另一者為碳原子數8以上之直鏈或分枝鏈狀的烷基。作為碳原子數8以上之直鏈或分枝鏈狀的烷基,更佳為十八烷基、二十二烷基、三十烷基。
化合物(P)可1種單獨使用,亦可使用2種以上。
化合物(P)的含量從抑制絕緣體區域的撥水化,並更加選擇性撥水化金屬區域的觀點來看,相對於表面處理劑的全質量,較佳為0.001質量%以上5質量%以下,更佳為0.005質量%以上4質量%以下,再更佳為0.01質量%以上3質量%以下,特佳為0.03質量%以上3質量%以下。
(有機溶劑(S))
有機溶劑(S)係具有提昇對藉由化合物(P)之金屬區域的撥水化的機能。
作為有機溶劑(S),例如可列舉亞碸類、碸類、醯胺類、內醯胺類、咪唑啉酮類、二烷基甘醇醚類、單醇系溶媒、(聚)烯烴二醇單烷基醚類、(聚)烯烴二醇單烷基醚乙酸酯類、其他醚類、酮類、其他酯類、內酯類、直鏈狀、分枝鏈狀或環狀的脂肪族烴類、芳香族烴類、萜烯類等。
作為亞碸類,可列舉二甲基亞碸。
作為碸類,例如可列舉二甲基碸、二乙基碸、雙(2-羥基乙基)碸、四亞甲基碸。
作為醯胺類,例如可列舉N,N-二甲基甲醯胺、N-甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基乙醯胺、N,N-二乙基乙醯胺。
作為內醯胺類,例如可列舉N-甲基-2-吡咯烷酮、N-乙基-2-吡咯烷酮、N-丙基-2-吡咯烷酮、N-羥基甲基-2-吡咯烷酮、N-羥基乙基-2-吡咯烷酮。
作為咪唑啉酮類,例如可列舉1,3-二甲基-2-咪唑啉酮、1,3-二乙基-2-咪唑啉酮、1,3-二異丙基-2-咪唑啉酮。
作為二烷基甘醇醚類,例如可列舉二甲基甘醇、二甲基二甘醇、二甲基三甘醇、甲基乙基二甘醇、二乙基甘醇、三乙二醇丁基甲基醚。
作為單醇系溶媒,例如可列舉甲醇、乙醇、n-丙醇、異丙醇、n-丁醇、異丁醇、sec-丁醇、tert-丁醇、n-戊醇、異戊醇、2-甲基丁醇、sec-戊醇、tert-戊醇、3-甲氧基丁醇、3-甲基-3-甲氧基丁醇、n-己醇、2-甲基戊醇、sec-己醇、2-乙基-1-丁醇、sec-庚醇、3-庚醇、1-辛醇、2-乙基己醇、sec-辛醇、n-壬基醇、2,6-二甲基-4-庚醇、n-癸醇、sec-十一烷基醇、三甲基壬基醇、sec-十四烷基醇、sec-十七烷基醇、甲基異丁基甲醇(Carbinol)、酚、環己醇、甲基環己醇、3,3,5-三甲基環己醇、苄基醇、苯基甲基甲醇(Carbinol)、二丙酮醇、甲酚。
作為(聚)烯烴二醇單烷基醚類,例如可列舉乙二醇單甲基醚、乙二醇單乙基醚、乙二醇單-n-丙基醚、乙二醇單-n-丁基醚、二乙二醇單甲基醚、二乙二醇單乙基醚、二乙二醇單-n-丙基醚、二乙二醇單-n-丁基醚、三乙二醇單甲基醚、三乙二醇單乙基醚、丙二醇單甲基醚、丙二醇單乙基醚、丙二醇單-n-丙基醚、丙二醇單-n-丁基醚、二丙二醇單甲基醚、二丙二醇單乙基醚、二丙二醇單-n-丙基醚、二丙二醇單-n-丁基醚、三丙二醇單甲基醚、三丙二醇單乙基醚。
作為(聚)烯烴二醇單烷基醚乙酸酯類,例如可列舉乙二醇單甲基醚乙酸酯、乙二醇單乙基醚乙酸酯、乙二醇單丁基醚乙酸酯、二乙二醇單甲基醚乙酸酯、二乙二醇單乙基醚乙酸酯、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚乙酸酯。
作為其他醚類,例如可列舉二甲基醚、二乙基醚、甲基乙基醚、二丙基醚、二異丙基醚、二丁基醚、二異戊基醚、二乙二醇二甲基醚、二乙二醇甲基乙基醚、二乙二醇單丁基醚、二乙二醇二乙基醚、四乙二醇二甲基醚、四氫呋喃。
作為酮類,例如可列舉甲基乙基酮、環己酮、2-庚酮、3-庚酮、2,6-二甲基-4-庚酮。
作為其他酯類,例如可列舉乳酸甲酯、乳酸乙酯等之乳酸烷基酯類;2-羥基-2-甲基丙酸乙酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙氧基乙酸乙酯、羥基乙酸乙酯、2-羥基-3-甲基丁酸甲酯、3-甲氧基丁基乙酸酯、3-甲基-3-甲氧基-1-丁基乙酸酯、3-甲基-3-甲氧基丁基丙酸酯、乙酸乙酯、乙酸n-丙酯、乙酸異丙酯、乙酸n-丁酯、乙酸異丁酯、乙酸n-戊酯、乙酸n-己酯、乙酸n-庚酯、乙酸n-辛酯、甲酸n-戊酯、乙酸異戊酯、丙酸n-丁酯、丁酸乙酯、丁酸n-丙酯、丁酸異丙酯、丁酸丁酯、n-辛酸甲酯、癸烷酸甲酯、丙酮酸甲酯、丙酮酸乙酯、丙酮酸n-丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-側氧基丁酸乙酯、己二酸二甲酯、丙二醇二乙酸酯。
作為內酯類,例如可列舉丙內酯、γ-丁內酯、6-戊內酯。
作為直鏈狀、分枝鏈狀或環狀的脂肪族烴類,例如可列舉n-己烷、n-庚烷、n-辛烷、n-壬烷、甲基辛烷、n-癸烷、n-十一烷、n-十二烷、2,2,4,6,6-五甲基庚烷、2,2,4,4,6,8,8-七甲基壬烷、環己烷、甲基環己烷。
作為芳香族烴類,例如可列舉苯、甲苯、三氟甲基苯、二甲苯、1,3,5-三甲基苯、萘、十氫萘。
作為萜烯類,例如可列舉p-薄荷烷、二苯基薄荷烷、檸烯、萜品烯、莰烷、降冰片烷、蒎烷。
有機溶劑(S)之相對介電常數,從更加選擇性撥水化金屬區域的觀點來看,較佳為35以下,更佳為20以下。
作為具有這般的低相對介電常數之有機溶劑(S),例如可列舉甲醇(相對介電常數:33)、二乙二醇單丁基醚(BDG)(相對介電常數:13.70)、丙二醇單甲基醚(PE)(相對介電常數:12.71)、苄基醇(相對介電常數:13.70)、2-庚酮(相對介電常數:11.74)、乙二醇單丁基醚乙酸酯(相對介電常數:8.66)、tert-丁醇(相對介電常數:12.5)、1-辛醇(相對介電常數:10.21)、異丁醇(相對介電常數:18.22)、三氟甲基苯(相對介電常數:9.18)、十氫萘(相對介電常數:2.16)、環己烷(相對介電常數:1.99)、癸烷(相對介電常數:未滿1)、乳酸乙酯(EL)(相對介電常數:13.22)、二乙二醇單甲基醚(相對介電常數:15.76)、1-壬醇(相對介電常數:9.13)、甲苯(相對介電常數:2.37)、丙二醇單甲基醚乙酸酯(PM)(相對介電常數:9.4)、甲基異丁基甲醇(Carbinol)(MIBC)(相對介電常數:10.47)、2,6-二甲基-4-庚醇(相對介電常數:2.98)、2-乙基-1-丁醇(相對介電常數:12.6)、2-丁酮肟(相對介電常數:2.9)、n-二丁基醚(相對介電常數:3.33)、丁酸丁酯(相對介電常數:4.55)、2,6-二甲基-4-庚酮(相對介電常數:9.82)等。
有機溶劑(S)可1種單獨使用,亦可使用2種以上。
(其他成分)
作為可摻合在表面處理劑之其他成分,相對於包含接近之金屬區域與絕緣體區域的基板表面,可抑制絕緣體區域的撥水化,可提昇更加選擇性撥水化金屬區域的效果,或可於不妨礙的範圍使用,例如可列舉化合物(P)以外之酸、鹼性含氮化合物、pH調整劑、抗氧化劑、紫外線吸收劑、黏度調整劑、消泡劑等。
(化合物(P)以外之酸)
作為酸,若為上述化合物(P)以外,可為有機酸及無機酸之任一者。
作為有機酸,可列舉甲酸、乙酸、檸檬酸、草酸、2-硝基苯基乙酸、2-乙基己烷酸、十二烷酸、2-羥基-1,2,3-丙烷三羧酸等之羧酸;抗壞血酸、酒石酸、葡萄糖醛酸等之糖酸;苯磺酸、p-甲苯磺酸等之磺酸等。
作為無機酸,可列舉氫氟酸(HF)、膦酸(HP(=O)(OH)
2)、磷酸(H
3PO
4)、鹽酸、硝酸、硼酸等。
其中,作為酸,較佳為羧酸或無機酸,更佳為乙酸、2-羥基-1,2,3-丙烷三羧酸、膦酸(HP(=O)(OH)
2)或氫氟酸(HF),再更佳為膦酸(HP(=O)(OH)
2)或氫氟酸(HF),特佳為氫氟酸。
(鹼性含氮化合物)
所謂鹼性含氮化合物,係意指抑制藉由化合物(P)之絕緣體區域的撥水化之化合物。鹼性含氮化合物之這般的性質雖不確定,但推測是起因於鹼性含氮化合物之陽離子種吸附在絕緣體區域,阻礙對化合物(P)之絕緣體區域的吸附。作為鹼性含氮化合物,只要具有這般的性質,雖並未特別限定,但例如可列舉第四級銨化合物、吡啶鎓鹵化物、吡咯烷鎓鹵化物、聯吡啶鎓鹵化物,或pK
b為2.5以下之胺或是其鹽(以下,亦稱為「低pK
b胺」)。
式(b1)中,R
a1~R
a4分別獨立表示碳數1~16之烷基、碳數6~16之芳基、碳數7~16之芳烷基或碳數1~16之羥基烷基。R
a1~R
a4之至少2個可彼此鍵結而形成環狀構造,尤其是R
a1與R
a2的組合及R
a3與R
a4的組合之至少一者可彼此鍵結而形成環狀構造。
式(b1)中,X
-表示氫氧化物離子、氯化物離子、氟化物離子、可具有氟之有機羧酸離子。作為可具有氟之有機羧酸離子,可列舉乙酸離子、三氟乙酸離子等。
式(b1)表示之化合物當中,四甲基銨、四乙基銨、四丙基銨、四丁基銨、甲基三丙基銨、甲基三丁基銨、乙基三甲基銨、二甲基二乙基銨鹽、苄基三甲基銨、十六烷基三甲基銨、(2-羥基乙基)三甲基銨,及螺環-(1,1’)-聯吡咯烷鎓之氫氧化物、氯化物或氟化物,從取得容易的點來看,較佳,以本發明之效果的點,更佳為氫氧化物或氟化物,再更佳為四甲基銨及苄基三甲基銨之氫氧化物或氟化物。
作為吡啶鎓鹵化物,可列舉吡啶鎓之氯化物或氟化物,較佳為氟化物。
作為吡咯烷鎓鹵化物,可列舉吡咯烷鎓之氯化物或氟化物,較佳為氟化物。
作為聯吡啶鎓鹵化物,可列舉聯吡啶鎓之氯化物或氟化物,較佳為氟化物。
作為低pK
b胺之pK
b,較佳為2.0以下,更佳為1.5以下。作為低pK
b胺,例如可列舉胍衍生物。尚,pKb係在25℃所測定之值。
作為胍衍生物,例如可列舉甲基胍、二甲基胍、三甲基胍、四甲基胍或該等之氯化物鹽或是氟化物鹽。於此等當中,較佳為四甲基胍或其氟化物鹽。
表面處理劑係將前述之化合物(P)、有機溶劑(S)、如有必要之其他成分用公知之方法混合而獲得。
<表面處理方法>
接著,針對使用前述之表面處理劑的表面處理方法進行說明。
表面處理方法係對於基板的表面之表面處理方法。基板的表面包含二個以上的區域。二個以上的區域包含至少一個的金屬區域、與至少一個的絕緣體區域。二個以上之上述區域當中之至少一個的上述金屬區域、與至少一個的上述絕緣體區域彼此接近。於此,所謂接近,係包含至少一個的上述金屬區域、與至少一個的上述絕緣體區域共有邊界線並相鄰的情況,或未共有邊界線構成在相鄰或離間的位置的情況。
表面處理方法係包含將上述表面曝露在前述之表面處理劑。在表面處理方法,藉由前述之化合物(P)、與上述區域的反應,將上述金屬區域之水的接觸角較與上述金屬區域接近之上述絕緣體區域之水的接觸角更提高10°以上。
作為表面處理方法的對象之基板及基板表面、金屬區域及絕緣體區域,及使用在表面處理方法之表面處理劑,係與在前述之<表面處理劑>之基板及基板表面、金屬區域及絕緣體區域及表面處理劑相同。
於表面處理方法,上述金屬區域之水的接觸角較與上述金屬區域接近之上述絕緣體區域之水的接觸角更提高10°以上。此事顯示撥水化金屬區域,並抑制絕緣體區域的撥水化。
(曝露)
作為將基板的表面曝露在表面處理劑之方法,可列舉將表面處理劑藉由例如浸漬法或旋轉塗佈法、輥塗法及刮刀塗佈法等之塗佈法等之手段,適用在(例如塗佈)基板的表面並進行曝露之方法。
作為曝露溫度,例如為10℃以上90℃以下,較佳為20℃以上80℃以下,更佳為20℃以上70℃以下,再更佳為20℃以上30℃以下。
作為上述曝露時間,從撥水化金屬區域,並抑制絕緣體區域的撥水化的觀點來看,較佳為20秒以上,更佳為30秒以上,再更佳為45秒以上。
作為上述曝露時間的上限值,雖並未特別限定,但例如為2小時以下等,通常而言,為1小時以下,較佳為15分鐘以下,再更佳為5分鐘以下,特佳為2分鐘以下。
於上述曝露後如有必要可進行洗淨及/或乾燥。洗淨例如藉由水清洗、活性劑清洗等進行。乾燥係藉由氮吹等進行。
藉由上述曝露,所接近之金屬區域及絕緣體區域當中,可相對於金屬區域,選擇性吸附化合物(P)。其結果,可將相對於金屬區域之水的接觸角較相對於與上述金屬區域接近之上述絕緣體區域之水的接觸角更提高10°以上,較佳為提高15°以上,更佳為提高20°以上,再更佳為提高25°以上。
相對於曝露在表面處理劑後之基板表面之水的接觸角,例如可定為50°以上140°以下。
藉由控制基板表面的材質、表面處理劑的種類及使用量以及曝露條件等,相對於水之接觸角可定為50°以上,較佳為60°以上,更佳為70°以上,再更佳為90°以上。作為上述接觸角的上限值,雖並未特別限定,但例如為140°以下、通常而言,為130°以下。
更具體而言,金屬區域之水接觸角較佳為70°以上,更佳為80°以上,更佳為90°以上,再更佳為100°以上。作為上述接觸角的上限值,雖並未特別限定,但例如為140°以下。
絕緣體區域的水接觸角較佳為70°以下,更佳為65°以下,再更佳為60°以下。作為上述接觸角的下限值,雖並未特別限定,但例如為50°以上。
<基板表面之區域選擇性製膜方法>
接著,針對使用上述的表面處理方法之基板表面之區域選擇性製膜方法進行說明。
基板表面之區域選擇性製膜方法包含藉由上述表面處理方法,處理上述基板之上述表面、與於經表面處理之上述基板的表面,藉由原子層成長法(ALD法)形成膜,於上述絕緣體區域上較上述金屬區域上堆積更多上述膜的材料。
上述表面處理的結果,可將金屬區域之水的接觸角較與上述金屬區域接近之上述絕緣體區域之水的接觸角更提高10°以上。水之接觸角於較絕緣體區域更大之金屬區域,藉由ALD法之膜形成材料吸附在基板表面上之上述區域變困難。其結果,藉由重複ALD循環,可選擇性厚膜化上述絕緣體區域上。
(藉由ALD法之膜形成)
作為藉由ALD法之膜形成方法,雖並未特別限定,但較佳為藉由使用至少2個之氣相反應物質(以下亦單稱為「前驅體氣體」)之吸附的薄膜形成方法。使用前驅體氣體之吸附較佳為化學吸附。
具體而言,可列舉包含下述步驟(a)及(b),至少重複1次(1循環)下述步驟(a)及(b),至得到所期望的膜厚為止之方法等。
(a)將藉由有關上述第2態樣之方法的表面處理之基板曝露在第1前驅體氣體的脈衝之步驟及
(b)接著上述步驟(a),將基板曝露在第2前驅體氣體的脈衝之步驟。
於上述步驟(a)之後上述步驟(b)之前,可包含亦可不包含電漿處理步驟、將第1前驅體氣體及其反應物藉由載體氣體、第2前驅體氣體等去除或排氣(清除)之步驟等。
上述步驟(b)之後,可包含亦可不包含電漿處理步驟、第2前驅體氣體及其反應物藉由載體氣體等去除錯或清除之步驟等。
作為載體氣體,可列舉氮氣體、氬氣氣體、氦氣體等之惰性氣體。
每個循環之每個脈衝及所形成之各層較佳為自我控制性,更佳為所形成之各層為單原子層。
作為上述單原子層的膜厚,例如可定為5nm以下,較佳可定為3nm以下,更佳可定為1nm以下,再更佳可定為0.5nm以下。
作為第1前驅體氣體,可列舉有機金屬、金屬鹵化物、金屬氧化鹵化物等,具體而言,五乙氧基鉭、肆(二甲基胺基)鈦、伍(二甲基胺基)鉭、肆(二甲基胺基)鋯、肆(二甲基胺基)鉿、肆(二甲基胺基)矽烷、銅六氟乙醯丙酮酸酯乙烯基三甲基矽烷、Zn(C
2H
5)
2、Zn(CH
3)
2、TMA(三甲基鋁)、TaCl
5、WF
6、WOCl
4、CuCl、ZrCl
4、AlCl
3、TiCl
4、SiCl
4、HfCl
4等。
作為第2前驅體氣體,可列舉可分解第1前驅體之前驅體氣體或可去除第1前驅體的配位子之前驅體氣體,具體而言,可列舉H
2O、H
2O
2、O
2、O
3、NH
3、H
2S、H
2Se、PH
3、AsH
3、C
2H
4或Si
2H
6等。
作為在步驟(a)之曝露溫度,雖並未特別限定,但例如為25℃以上800℃以下,較佳為50℃以上650℃以下,更佳為100℃以上500℃以下,再更佳為150℃以上375℃以下。
作為在步驟(b)之曝露溫度,雖並未特別限定,但可列舉與在步驟(a)之曝露溫度實質上相等或其以上之溫度。
作為藉由ALD法所形成之膜,雖並未特別限定,但可列舉包含純元素之膜(例如Si、Cu、Ta、W)、包含氧化物之膜(例如SiO
2、GeO
2、HfO
2、ZrO
2、Ta
2O
5、TiO
2、Al
2O
3、ZnO、SnO
2、Sb
2O
5、B
2O
3、In
2O
3、WO
3)、包含氮化物之膜(例如Si
3N
4、TiN、AlN、BN、GaN、NbN)、包含碳化物之膜(例如SiC)、包含硫化物之膜(例如CdS、ZnS、MnS、WS
2、PbS)、包含硒化物之膜(例如CdSe、ZnSe)、包含磷化物之膜(GaP、InP)、包含砷化物之膜(例如GaAs、InAs)或該等之混合物等。
[實施例]
以下,雖根據實施例及比較例,更具體說明本發明,但本發明並非被限定於以下之實施例。
[實施例1及比較例1]
(表面處理劑的調製)
於下述有機溶劑(S),將下述化合物(P)以下述表1所記載的含量均一混合,調製實施例1及比較例1的表面處理劑。
作為化合物(P),係使用下述P1~P2。
P1:十八烷基次磷酸
P2:十八烷基膦酸
作為有機溶劑(S),係使用下述S1。
S1:異丁醇
(前處理、表面處理)
使用所得之實施例1及比較例1的表面處理劑,依據以下之方法,進行Cu基板、W基板、TaN基板及SiO
2基板的表面處理。
具體而言,將各基板於濃度25ppm之HF水溶液於25℃浸漬1分鐘,進行前處理。上述前處理後,將各基板以脫離子水洗淨1分鐘。將水洗後之各基板藉由氮氣流乾燥。
將乾燥後之各基板於上述各表面處理劑以25℃浸漬1分鐘,進行各基板的表面處理。將表面處理後之各基板以異丙醇洗淨1分鐘後,進行1分鐘藉由脫離子水之洗淨。將經洗淨之各基板藉由氮氣流乾燥,而得到經表面處理之各基板。
(水之接觸角的測定)
針對僅進行上述表面處理後之各基板及上述前處理之各基板,測定水之接觸角。
水之接觸角的測定係使用Dropmaster700(協和界面科學股份有限公司製),於各基板的表面滴下純水液滴(2.0μL),作為在滴下2秒後之接觸角測定。將結果示於表1。
表1中之「參考比較例1」表示上述前處理及表面處理當中,僅進行前處理之試驗例。從表1,以實施例1的表面處理劑表面處理時,與以比較例1的表面處理劑表面處理的情況相比較,增大金屬基板之Cu基板、W基板、TaN基板上之水接觸角。從此等之實驗結果,瞭解到於實施例1使用之十八烷基次磷酸與於比較例1使用之十八烷基膦酸相比較,可更強力撥水化此等之金屬基板。
另一方面,於實施例1與比較例1之間,絕緣體基板之SiO
2基板上之水接觸角為相同程度。又,以實施例1的表面處理劑表面處理時與參考比較例1之間,SiO
2基板上之水接觸角為相同程度。從此等之實驗結果,瞭解到於實施例1使用之十八烷基次磷酸並未撥水化上述絕緣體基板。
集合以上之實驗結果時,可說十八烷基次磷酸較十八烷基膦酸,可更加選擇性撥水化金屬基板。
(於Cu基板上之Al
2O
3之ALD成膜試驗)
使用實施例1及比較例1的表面處理劑,以下述順序,進行相對於Cu基板之表面處理、與Al
2O
3之ALD成膜試驗。
(順序)
1.將Cu基板於濃度25ppm之HF水溶液以25℃浸漬1分鐘,進行前處理。
2.將前處理後之Cu基板以脫離子水洗淨1分鐘。將水洗後之Cu基板藉由氮氣流乾燥
3.將乾燥後之Cu基板於表面處理劑浸漬1分鐘後,再以異丙醇攪拌洗淨1分鐘,並以脫離子水清洗後,進行氮吹。
4.用以下之條件進行91次、ALD循環處理。
・原子層堆積(ALD)裝置:AT-410(Anric Technologies公司製)
・腔室溫度:150℃
・前驅體:三甲基鋁及H
2O
針對進行0次、45次、91次、ALD循環處理後之Cu基板,分別藉由螢光X光分析,測定Al
2O
3之膜厚。
上述順序1~4當中,未進行藉由順序1~3的表面處理劑之處理,將僅進行順序4之ALD成膜的試驗例作為「參考比較例2」,以與上述相同之方法測定Al
2O
3之膜厚。而且,從以實施例1及比較例1的表面處理劑進行表面處理所得之Al
2O
3之膜厚、與於參考比較例2所得之Al
2O
3之膜厚,依照下述式,算出ALD阻斷率。將結果示於表2。
ALD阻斷率(%)=[1-(以表面處理劑表面處理時之Al
2O
3膜厚)/(參考比較例2之Al
2O
3膜厚)]×100
從參考比較例2之結果,並非以表面處理劑表面處理Cu基板,而是進行ALD成膜時,於91循環後Al
2O
3之膜厚約成為10nm。以比較例1的表面處理劑表面處理Cu基板時,於91循環後,雖減低Al
2O
3之膜厚,而停留在2.6nm,ALD阻斷率亦停留在74.0%。另一方面,以實施例1的表面處理劑表面處理時,於91循環後,Al
2O
3之膜厚大幅減低至0.7nm,ALD阻斷率亦大幅增大為92.7%。
(於SiO
2基板上之Al
2O
3之ALD成膜試驗)
在Cu基板上之Al
2O
3之上述ALD成膜試驗,除了取代Cu基板,改使用SiO
2基板之外,其他藉由與上述相同之順序,以45次之ALD循環處理數進行ALD成膜試驗。將結果示於表3。
從參考比較例2之結果,並非以表面處理劑表面處理SiO
2基板,而是進行ALD成膜時,於45循環後Al
2O
3之膜厚約成為5.0nm。以實施例1及比較例1的表面處理劑表面處理SiO
2基板時,於45循環後,成為幾乎與參考比較例相同,Al
2O
3之膜厚。從此等之實驗結果,瞭解到十八烷基次磷酸係與十八烷基膦酸相同,並未阻礙SiO
2基板上之ALD成膜。
[實施例1~10及比較例2]
(表面處理劑的調製)
作為混合下述化合物(P)、與下述溶劑,在室溫之飽和溶液,調製實施例1~10及比較例2的表面處理劑。
作為化合物(P),係使用下述P1。
P1:十八烷基次磷酸
作為溶劑,係使用相當於有機溶劑(S)之下述S1~S10及下述S11。
S1:異丁醇(相對介電常數:18.22)
S2:甲苯(相對介電常數:2.37)
S3:丁酸丁酯(相對介電常數:4.55)
S4:三氟甲基苯(相對介電常數:9.18)
S5:丙二醇單甲基醚乙酸酯(相對介電常數:9.40)
S6:1-辛醇(相對介電常數:10.21)
S7:甲基異丁基甲醇(Carbinol)(相對介電常數:10.47)
S8:丙二醇單甲基醚(相對介電常數:12.71)
S9:苄基醇(相對介電常數:13.70)
S10:γ-丁內酯(相對介電常數:42.10)
S11:水(相對介電常數:78.36)
(於Cu基板上之Al
2O
3之ALD成膜試驗)
使用實施例1~10及比較例2的表面處理劑,以下述順序進行相對於Cu基板之表面處理、與Al
2O
3之ALD成膜試驗。
(順序)
1.將Cu基板於濃度25ppm之HF水溶液以25℃浸漬1分鐘,進行前處理。
2.將前處理後之Cu基板以脫離子水洗淨1分鐘。將水洗後之Cu基板藉由氮氣流乾燥
3.將乾燥後之Cu基板於表面處理劑浸漬1分鐘後,再以異丙醇攪拌洗淨1分鐘,並以脫離子水清洗後,進行氮吹。
4.用以下之條件進行45次、ALD循環處理。
・原子層堆積(ALD)裝置:AT-410(Anric Technologies公司製)
・腔室溫度:150℃
・前驅體:三甲基鋁及H
2O
針對進行45次之ALD循環處理後之Cu基板,分別藉由螢光X光分析,測定Al
2O
3之膜厚。將結果示於表4。
(水之接觸角的測定)
在上述ALD成膜試驗,針對順序3之氮吹結束後之Cu基板、與順序4之ALD循環處理後之Cu基板,測定水之接觸角。
水之接觸角的測定係使用Dropmaster700(協和界面科學股份有限公司製),於各基板的表面滴下純水液滴(2.0μL),作為在滴下2秒後之接觸角測定。將結果示於表4。
表4中之「參考比較例3」表示上述ALD成膜試驗的順序1~4當中,未進行順序3的表面處理之試驗例。從參考比較例3之結果,並非以表面處理劑表面處理Cu基板,而是進行ALD成膜時,於45循環後Al
2O
3之膜厚約成為5.0nm。以比較例2的表面處理劑表面處理Cu基板時,Al
2O
3之膜厚約成為4.7nm,Al
2O
3之膜厚幾乎未減低。另一方面,以實施例1~10的表面處理劑表面處理時,瞭解到Al
2O
3之膜厚皆減低。實施例1~10當中,以摻合低相對介電常數之有機溶劑的表面處理劑表面處理的情況下,增大Al
2O
3膜厚之減低效果。
Claims (6)
- 如請求項1之表面處理劑,其中,前述有機溶劑(S)的相對介電常數為35以下。
- 如請求項2之表面處理劑,其中,前述有機溶劑(S)的相對介電常數為20以下。
- 如請求項1~3中任一項之表面處理劑,其中,前述金屬為選自由銅、鈷、鋁、銀、鎳、鈦、金、鉻、鉬、鎢、釕、氮化鈦及氮化鉭所成群組中之1種以上,前述絕緣體為選自由氧化鋁、氧化鈦、氧化鋯、氧化鉿、氧化鉭、氧化矽、含有氟之氧化矽、含有碳之氧化矽、氮化矽、氮化硼、碳化矽、碳氮化矽、氧氮化矽及氧碳氮化矽所成群組中之1種以上。
- 一種表面處理方法,其係對於基板的表面之表面處理方法,其特徵為: 前述表面包含二個以上的區域, 二個以上之前述區域包含至少一個的金屬區域、與至少一個的絕緣體區域, 並且二個以上之前述區域當中之至少一個的前述金屬區域、與至少一個的前述絕緣體區域彼此接近, 包含將前述表面曝露在如請求項1~4中任一項之表面處理劑, 藉由前述化合物(P)、與前述區域的反應,將前述金屬區域之水的接觸角較接近前述金屬區域之前述絕緣體區域之水的接觸角更提高10°以上。
- 一種基板表面之區域選擇性製膜方法,其係包含藉由如請求項5之表面處理方法,處理前述基板之前述表面、與 於經表面處理之前述基板的表面,藉由原子層成長法形成膜, 於前述絕緣體區域上較前述金屬區域上堆積更多前述膜的材料。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021121790A JP7097482B1 (ja) | 2021-07-26 | 2021-07-26 | 表面処理剤、表面処理方法及び基板表面の領域選択的製膜方法 |
JP2021-121790 | 2021-07-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202319392A true TW202319392A (zh) | 2023-05-16 |
Family
ID=82320498
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111127306A TW202319392A (zh) | 2021-07-26 | 2022-07-21 | 表面處理劑、表面處理方法及基板表面之區域選擇性製膜方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20230040210A1 (zh) |
JP (2) | JP7097482B1 (zh) |
KR (1) | KR20230016591A (zh) |
TW (1) | TW202319392A (zh) |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3003991A (en) * | 1957-11-13 | 1961-10-10 | Allied Chem | Composition comprising an unsaturated polyester, a substance containing at least one ch2=c< group, a vanadium compound and benzene phosphinic acid, and method of curing same |
EP0902325B1 (en) * | 1997-09-10 | 2002-03-13 | Fuji Photo Film Co., Ltd. | Photosensitive composition |
US6391785B1 (en) * | 1999-08-24 | 2002-05-21 | Interuniversitair Microelektronica Centrum (Imec) | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
JP6191054B2 (ja) * | 2013-11-11 | 2017-09-06 | 平岡織染株式会社 | 遮熱メッシュシェード |
TWI690780B (zh) * | 2014-12-30 | 2020-04-11 | 美商富士軟片電子材料美國股份有限公司 | 用於自半導體基板去除光阻之剝離組成物 |
JP6488890B2 (ja) * | 2015-06-03 | 2019-03-27 | 信越化学工業株式会社 | フルオロオキシアルキレン基含有ポリマー変性ホスホン酸誘導体、該誘導体を含む表面処理剤、該表面処理剤で処理された物品及び光学物品 |
US20190300821A1 (en) * | 2016-09-28 | 2019-10-03 | Fujimi Incorporated | Surface treatment composition |
JP7330000B2 (ja) * | 2019-07-16 | 2023-08-21 | 東京応化工業株式会社 | 表面処理剤、表面処理方法及び基板表面の領域選択的製膜方法 |
-
2021
- 2021-07-26 JP JP2021121790A patent/JP7097482B1/ja active Active
-
2022
- 2022-06-27 JP JP2022102742A patent/JP2023017706A/ja active Pending
- 2022-07-08 US US17/811,528 patent/US20230040210A1/en active Pending
- 2022-07-18 KR KR1020220088134A patent/KR20230016591A/ko unknown
- 2022-07-21 TW TW111127306A patent/TW202319392A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20230040210A1 (en) | 2023-02-09 |
KR20230016591A (ko) | 2023-02-02 |
JP2023017706A (ja) | 2023-02-07 |
JP2023017484A (ja) | 2023-02-07 |
JP7097482B1 (ja) | 2022-07-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102376352B1 (ko) | 다공성의 낮은 유전상수 필름 상에 기공 밀봉 층을 제공하기 위한 방법 및 조성물 | |
US10366878B2 (en) | Selective deposition through formation of self-assembled monolayers | |
TWI802624B (zh) | 表面處理方法、表面處理劑以及於基板上區域選擇性地製膜之方法 | |
JP7428777B2 (ja) | 表面処理方法、表面処理剤、及び基板上に領域選択的に製膜する方法 | |
US11358976B2 (en) | Surface treatment agent, surface treatment method, and area selective deposition method | |
KR20220089634A (ko) | 표면 처리제, 표면 처리 방법 및 기판 표면의 영역 선택적 제막 방법 | |
TW202311548A (zh) | 表面處理方法、基板表面之區域選擇性製膜方法及表面處理劑 | |
TW202319392A (zh) | 表面處理劑、表面處理方法及基板表面之區域選擇性製膜方法 | |
JP7378293B2 (ja) | 表面処理剤、表面処理方法及び基板表面の領域選択的製膜方法 | |
US20220017455A1 (en) | Surface treatment agent, surface treatment method, and region selective film formation method for surface of substrate | |
US20220195591A1 (en) | Surface treatment agent, surface treatment method, and region selective film formation method for surface of substrate | |
JP2023087564A (ja) | 基板表面処理方法、基板表面の領域選択的製膜方法、及び表面処理剤 | |
WO2024111391A1 (ja) | 処理基板の製造方法、基板の処理方法、パターン形成方法及び洗浄液 | |
US20230323528A1 (en) | Substrate processing method and selective deposition method using the same | |
TW202348769A (zh) | 導電體表面用撥水劑、導電體表面之撥水化方法、將具有導電體表面之區域進行選擇性撥水化之方法、表面處理之方法及基板表面之區域選擇性之製膜方法 | |
KR20230139306A (ko) | 기판 처리 방법 및 이를 사용한 선택적 증착 방법 |