TW202316620A

TW202316620A - Method of manufacturing optoelectronic products, manufacturing apparatus thereof, and method of manufacturing led devices

Info

Publication number: TW202316620A
Application number: TW111120508A
Authority: TW
Inventors: 謝明勳
Original assignee: 晶元光電股份有限公司
Priority date: 2021-10-05
Filing date: 2022-06-01
Publication date: 2023-04-16

Abstract

An embodiment of the application provides a method of manufacturing optoelectronic products. A first carrier substrate is provided with LED devices positioned in a first array with first rows and first columns. Two adjacent first rows are separated from each other by a first row pitch, and two adjacent first columns are separated from each other by a first column pitch. A first transferring step is performed to move the LED devices from the first carrier substrate to a second carrier substrate, to form a second array with second rows and second columns. Two adjacent second rows are separated from each other by a second row pitch equal to the first row pitch. Two adjacent second columns are separated from each other by a second column pitch larger than the first column pitch. A second transferring step is performed to move the LED devices from the second carrier substrate to a third carrier substrate, to form a third array with third rows and third columns. Two adjacent third rows are separated from each other by a third row pitch larger to the second row pitch. Two adjacent third columns are separated from each other by a third column pitch equal to the second column pitch.

Description

光電產品製造方法、相關設備、以及LED裝置之製造方法Manufacturing method of optoelectronic product, related equipment, and manufacturing method of LED device

本申請主要是有關於光電產品之製造方法與相關設備，且特別是有關於一種關於製造LED螢幕…等LED裝置之製造方法與相關設備。This application is mainly related to the manufacturing method and related equipment of optoelectronic products, and in particular to a manufacturing method and related equipment related to manufacturing LED screens... and other LED devices.

發光二極體（Light-Emitting Diode；LED）為一種光電半導體元件，具有耗能低、低發熱、操作壽命長、防震、體積小、以及反應速度快等良好特性，因此適用於各種照明及顯示用途。Light-emitting diode (Light-Emitting Diode; LED) is an optoelectronic semiconductor element with good characteristics such as low energy consumption, low heat generation, long operating life, shockproof, small size, and fast response, so it is suitable for various lighting and display use.

當半導體製程技術不斷地突破，LED 晶粒（Chip）的尺寸低於肉眼可辨的地步之後，例如：小於100μm、50μm、或是30μm，其用途就不再只侷限於液晶顯示器的背光源。紅、藍、綠三種顏色的LED晶粒，可以直接組成一個顯示器的畫素（Pixel），意味不再需要液晶顯示器中的濾光片和液晶層。LED晶粒本身就會發光，所以也不用額外的背光模組。When the semiconductor process technology continues to break through and the size of the LED chip (Chip) is lower than the naked eye, for example: less than 100μm, 50μm, or 30μm, its use is no longer limited to the backlight of the liquid crystal display. Red, blue, and green LED grains can directly form a display pixel (Pixel), which means that the filter and liquid crystal layer in the liquid crystal display are no longer needed. The LED grain itself will emit light, so there is no need for an additional backlight module.

但是，以一塊75吋4K解析度的LED顯示器來說，約需要安裝約2,400萬顆LED晶粒。要將數百萬乃至數千萬顆LED晶粒，從成長基板或暫時載板，轉移至顯示器的背板（Backplane）上，且需要排列整齊，就是所謂的巨量轉移（Mass Transfer）。如何有效率地進行巨量轉移，使得轉移的結果有高精度、高良率、低成本，就是業界所努力的目標。However, for a 75-inch LED display with 4K resolution, about 24 million LED chips need to be installed. To transfer millions or even tens of millions of LED dies from the growth substrate or temporary carrier to the backplane of the display, and arrange them neatly, this is the so-called mass transfer. How to efficiently carry out mass transfer so that the transfer result has high precision, high yield, and low cost is the goal of the industry.

本申請之實施例揭露一種光電產品之製造方法。此製造方法提供至少第一載板，其上設有複數電子元件，排列成第一矩陣，具有沿著第一方向之數個第一主排列線，以及沿著第二方向之數個第一次排列線。第一方向不同於第二方向。兩相鄰之第一主排列線相距第一主線距。兩相鄰之第一次排列線相距第一次線距；從第一載板轉移複數電子元件至第二載板並排列成第二矩陣。第二矩陣具有沿著第一方向之數個第二主排列線，以及沿著第二方向之數個第二次排列線。兩相鄰之第二主排列線相距第二主線距。兩相鄰之第二次排列線相距第二次線距。第二主線距等於第一主線距，第二次線距大於第一次線距；從第二載板轉移複數電子元件至第三載板並排列成第三矩陣。第三矩陣具有沿著第一方向之數個第三主排列線，以及沿著第二方向之數個第三次排列線。兩相鄰之第三主排列線相距第三主線距。兩相鄰之第三次排列線相距第三次線距。第三主線距大於第二主線距。第三次線距等於第二次線距。The embodiment of the application discloses a manufacturing method of an optoelectronic product. The manufacturing method provides at least a first carrier on which a plurality of electronic components are arranged in a first matrix, with several first main alignment lines along the first direction, and several first main alignment lines along the second direction. Secondary line. The first direction is different from the second direction. Two adjacent first main alignment lines are separated by a first main line distance. The distance between two adjacent first arrangement lines is the first line distance; the plurality of electronic components are transferred from the first carrier to the second carrier and arranged into a second matrix. The second matrix has several second main alignment lines along the first direction, and several second alignment lines along the second direction. Two adjacent second main alignment lines are separated by a second main line pitch. The distance between two adjacent second arrangement lines is the second line distance. The second main line spacing is equal to the first main line spacing, and the second line spacing is greater than the first line spacing; the plurality of electronic components are transferred from the second carrier to the third carrier and arranged in a third matrix. The third matrix has a plurality of third main alignment lines along the first direction, and a plurality of third alignment lines along the second direction. The distance between two adjacent third main alignment lines is the third main line distance. The distance between two adjacent third arrangement lines is the third line distance. The third main pitch is greater than the second main pitch. The third line distance is equal to the second line distance.

本申請之實施例揭露一種用來轉移數個電子元件的設備，具有雷射模組、供體載具、以及受體載具。雷射模組用以產生雷射光束；供體載具用以承載成長基板，成長基板具有數個電子元件。供體載具與雷射模組架構可以相對移動，使雷射光束可照射數個電子元件中之數個第一電子元件；受體載具用以承載載板。供體載具與受體載具架構可以相對移動，使數個第一電子元件可以轉移至載板上之預設位置。數個第一電子元件於成長基板上具有第一間距，轉移至載板上後具有不同於第一間距之第二間距。Embodiments of the present application disclose an apparatus for transferring a plurality of electronic components, including a laser module, a donor carrier, and a receiver carrier. The laser module is used to generate laser beams; the donor carrier is used to carry the growth substrate, and the growth substrate has several electronic components. The donor carrier and the laser module structure can move relatively, so that the laser beam can irradiate several first electronic components among the plurality of electronic components; the acceptor carrier is used to carry the carrier board. The donor carrier and the acceptor carrier structure can move relative to each other, so that several first electronic components can be transferred to preset positions on the carrier board. The plurality of first electronic components have a first pitch on the growth substrate, and have a second pitch different from the first pitch after being transferred to the carrier.

本申請之實施例揭露一種LED裝置之製造方法，包括：提供成長基板，其上形成有數個LED晶粒；從成長基板轉移數個LED晶粒至暫時基板；於暫時基板上形成光轉換層，包覆數個LED晶粒，其中，光轉換層用以轉換數個LED晶粒所發出的第一光線，成為具有預設波長的第二光線；圖案化光轉換層；於光轉換層上形成濾光層，包覆光轉換層與數個LED晶粒，其中，濾光層用來阻擋第一光線；以及，圖案化濾光層，以使每一LED元件具有數個LED晶粒其中之一、光轉換層、以及濾光層。The embodiment of the present application discloses a method for manufacturing an LED device, including: providing a growth substrate on which several LED crystal grains are formed; transferring several LED crystal grains from the growth substrate to a temporary substrate; forming a light conversion layer on the temporary substrate, Coating several LED crystal grains, wherein the light conversion layer is used to convert the first light emitted by several LED crystal grains into second light with a predetermined wavelength; patterning the light conversion layer; forming on the light conversion layer a light filter layer covering the light conversion layer and several LED dies, wherein the filter layer is used to block the first light; and patterning the filter layer so that each LED element has several LED dies among them 1. The light conversion layer and the filter layer.

下文中，將參照圖式詳細地描述本申請之示例性實施例，已使得本申請領域技術人員能夠充分地理解本申請之精神。本申請並不限於以下之實施例，而是可以以其他形式實施。在本說明書中，有一些相同的符號，其表示具有相同或是類似之結構、功能、原理的元件，且為業界具有一般知識能力者可以依據本說明書之教導而推知。為說明書之簡潔度考量，相同之符號的元件將不再重述。Hereinafter, exemplary embodiments of the present application will be described in detail with reference to the accompanying drawings, so that those skilled in the art of the present application can fully understand the spirit of the present application. The present application is not limited to the following embodiments, but can be implemented in other forms. In this specification, there are some same symbols, which represent elements with the same or similar structure, function, and principle, and can be inferred by those with general knowledge in the industry based on the teaching of this specification. For the sake of brevity in the description, elements with the same symbols will not be repeated.

在本申請的實施例中，提供第一載板，第一載板上有排列成數行與數列的數個LED元件，此數個LED元件排列成第一矩陣。第一矩陣具有數個第一行以及數個第一列。兩相鄰第一行相距第一行間距。兩相鄰第一列相距第一列間距。這些LED元件先經歷第一次轉移，從第一載板轉移到第二載板，並排列成第二矩陣。第二矩陣具有數個第二行以及數個第二列。兩相鄰第二行相距第二行間距，第二行間距大於第一行間距。兩相鄰第二列相距第二列間距，第二列間距相等第一列間距。這些LED元件接著經歷第二次轉移，從第二載板轉移到第三載板，並排列成第三矩陣。第三矩陣具有數個第三行以及數個第三列。兩相鄰第三行相距第三行間距，第三行間距等於第二行間距。兩相鄰第三列相距第三列間距，第三列間距大於第二列間距。In an embodiment of the present application, a first carrier is provided, and a plurality of LED elements arranged in rows and columns are provided on the first carrier, and the plurality of LED elements are arranged in a first matrix. The first matrix has several first rows and several first columns. The first row spacing between two adjacent first rows. Two adjacent first columns are separated by the first column spacing. These LED elements are first transferred from the first carrier to the second carrier and arranged in a second matrix. The second matrix has several second rows and several second columns. Two adjacent second rows are separated by a second row spacing, and the second row spacing is greater than the first row spacing. Two adjacent second columns are separated by a second column spacing, and the second column spacing is equal to the first column spacing. These LED elements are then subjected to a second transfer from the second carrier to the third carrier and arranged in a third matrix. The third matrix has several third rows and several third columns. Two adjacent third rows are separated by a third row spacing, and the third row spacing is equal to the second row spacing. Two adjacent third columns are separated by a third column spacing, and the third column spacing is greater than the second column spacing.

從矩陣的角度來看，第一次轉移先放大第一行間距，第二次轉移則放大第一列間距。所以，第三行間距大於第一行間距，第三列間距大於第一列間距。From the perspective of the matrix, the first transfer first enlarges the first row spacing, and the second transfer enlarges the first column spacing. Therefore, the third row spacing is greater than the first row spacing, and the third column spacing is greater than the first column spacing.

在另一實施例中，第一次轉移可以先放大第一列間距，第二次轉移才放大第一行間距。從矩陣的角度來看，最終，第三行間距大於第一行間距，第三列間距大於第一列間距。In another embodiment, the first transfer can first enlarge the first column pitch, and the second transfer can enlarge the first row pitch. From the perspective of the matrix, ultimately, the third row spacing is greater than the first row spacing, and the third column spacing is greater than the first column spacing.

在實施例中，第三載板的第三行間距與第三列間距可以大約等於另一畫素載板上的畫素行間距與畫素列間距。所以，第三載板上的該些LED元件可以一次性的轉移到另一畫素載板上，提升畫素載板的量產速度。In an embodiment, the third row pitch and the third column pitch of the third carrier may be approximately equal to the pixel row pitch and pixel column pitch of another pixel carrier. Therefore, the LED elements on the third carrier board can be transferred to another pixel carrier board at one time, so as to increase the mass production speed of the pixel carrier board.

第一載板上的第一行間距與第一列間距在製程工藝允許下可以儘可能地縮小，第一載板上單位面積中的LED元件數量得以最大化，第一載板的使用效率因此可以增加。而且，在一些實施例中，在LED元件尚未被移轉前，可以在第一載板上直接對該些LED元件中的部分進行加工，得以降低製程過程中耗損的材料。關於降低製程過程中材料耗損部分的細節，請參考後續說明書第[0080]段部分的描述。The spacing between the first row and the first column on the first carrier can be reduced as much as possible as the process technology allows, the number of LED elements per unit area on the first carrier can be maximized, and the use efficiency of the first carrier is therefore can increase. Moreover, in some embodiments, before the LED elements are transferred, some of the LED elements can be directly processed on the first carrier, so as to reduce the material loss during the process. For details on reducing material loss during the manufacturing process, please refer to the description in paragraph [0080] of the follow-up specification.

請參閱圖1A與1B。圖1A顯示依據本申請之實施例的製作方法M01；圖1B顯示製作方法M01下，所依序產生的載板100、120與140。製作方法M01有兩次的LED元件轉移，一次從載板100轉移到載板120，另一次從載板120轉移到載板140。Please refer to Figures 1A and 1B. FIG. 1A shows a manufacturing method M01 according to an embodiment of the present application; FIG. 1B shows the sequentially produced substrates 100 , 120 and 140 under the manufacturing method M01 . Manufacturing method M01 has two transfers of LED elements, one transfer from the carrier 100 to the carrier 120 , and the other transfer from the carrier 120 to the carrier 140 .

製作方法M01的步驟S02先提供載板100。如同圖1B所示，載板100上設置有數個LED元件102。舉例來說，一LED元件102可以是一LED晶粒，LED晶粒可以具有單一個發光區或是多個發光區，具有多個發光區的LED晶粒中的發光區可以串聯、並聯或串並聯混合，串聯的多個發光區的LED晶粒也被稱為高壓晶片（High Voltage Chip）。在另一些實施例中，LED元件102也可以被雷射二極體（Laser Diode）、光電二極體（Photo Diode）、或是集成電路元件（integrated circuit component）所取代。The step S02 of the manufacturing method M01 firstly provides the carrier 100 . As shown in FIG. 1B , several LED elements 102 are disposed on the carrier board 100 . For example, an LED element 102 can be an LED die, and the LED die can have a single light-emitting area or multiple light-emitting areas, and the light-emitting areas in an LED die with multiple light-emitting areas can be connected in series, in parallel, or in series. Parallel mixed, LED grains with multiple light-emitting areas in series are also called High Voltage Chips. In some other embodiments, the LED element 102 may also be replaced by a laser diode (Laser Diode), a photodiode (Photo Diode), or an integrated circuit component (integrated circuit component).

在載板100上，數個LED元件102排列成矩陣101，具有沿著垂直方向的行X01-X05，以及沿著水平方向的列Y01-Y08。圖1B舉例顯示行X01與行X02之間、X02與行X03之間相距有行間距104H，以及列Y04與列Y05、列Y05與列Y06之間相距有列間距104V。儘管圖1B顯示載板100上的所有行間距104H大致都相等，所有列間距104V大致都相等，但本申請並不限於此。在一些實施例中，載板100上的行間距104H彼此不盡相同，列間距104V彼此也不盡相同。如圖所示，LED元件102之間的距離指的是兩個LED元件的邊長中心點在特定方向上的距離，但本申請並不限於此，也可以是兩個LED元件的側邊在特定方向上的距離。On the carrier board 100, several LED elements 102 are arranged in a matrix 101 with rows X01-X05 along the vertical direction and columns Y01-Y08 along the horizontal direction. FIG. 1B shows for example that there is a row spacing 104H between row X01 and row X02 , between X02 and row X03 , and there is a column spacing 104V between column Y04 and column Y05 , and column Y05 and column Y06 . Although FIG. 1B shows that all row pitches 104H and all column pitches 104V on the carrier 100 are approximately equal, the present application is not limited thereto. In some embodiments, the row spacing 104H on the carrier 100 is different from each other, and the column spacing 104V is also different from each other. As shown in the figure, the distance between the LED elements 102 refers to the distance between the center points of the side lengths of the two LED elements in a specific direction, but the application is not limited thereto. distance in a particular direction.

製作方法M01的步驟S04接續步驟S02，將LED元件102從載板100轉移到載板120，改變行與行之間的行間距，但維持列與列之間的列間距不變。如同圖1B所示，在載板120上，數個LED元件102排列成矩陣121，具有垂直方向的行X21-X25，以及水平方向的列Y21-Y28。圖1B舉例顯示行X21與行X22、X24與行X25之間相距有行間距124H，以及列Y21與列Y22、列Y27與列Y28之間相距有列間距124V。步驟S04使得載板120上的所有行間距124H彼此大致都相等，但載板120上的行間距124H大於載板100上的行間距104H。然而，步驟S04並沒有改變列與列之間的列間距，所以，載板120上的所有列間距124V大致都相等於載板100上的對應的列間距104V。The step S04 of the manufacturing method M01 is continued from the step S02, and the LED element 102 is transferred from the carrier 100 to the carrier 120, and the row spacing between the rows is changed, but the column spacing between the columns is kept unchanged. As shown in FIG. 1B , on the carrier board 120 , a plurality of LED elements 102 are arranged in a matrix 121 with vertical rows X21 - X25 and horizontal columns Y21 - Y28 . FIG. 1B shows an example that there is a row spacing 124H between row X21 and row X22 , and row X24 and row X25 , and there is a column spacing 124V between column Y21 and column Y22 , and column Y27 and column Y28 . Step S04 makes all the row spacings 124H on the carrier 120 substantially equal to each other, but the row spacing 124H on the carrier 120 is larger than the row spacing 104H on the carrier 100 . However, step S04 does not change the column spacing between columns, so all the column spacing 124V on the carrier 120 is roughly equal to the corresponding column spacing 104V on the carrier 100 .

在一實施例中，步驟S04是一次批次轉移一行，一行接著一行的將LED元件102從載板100批次轉移到載板120。舉例來說，載板100上位於行X01的LED元件102，同時間批次轉移到載板120上，成為位於行X21的LED元件102；接著同時間批次轉移位於行X02的LED元件102，成為行X22的LED元件102。依此類推，可以將載板100上所有的LED元件102，批次轉移到載板120上，使得載板100上行與行之間的行順序關係，就等於載板120上行與行之間的行順序關係。從一個角度來看，載板120上的矩陣121近似於載板100上的矩陣101，所有LED元件102在空間上的相對位置都一樣，只是矩陣121的行間距124H不同於矩陣101的行間距104H。所以，載板120上的行X21-X25分別來自載板100上的行X01-X05；但本申請不限於此。In one embodiment, step S04 is to transfer the LED elements 102 from the carrier 100 to the carrier 120 in batches one row at a time, row by row. For example, the LED elements 102 located in the row X01 on the carrier board 100 are transferred to the carrier board 120 in batches at the same time to become the LED elements 102 located in the row X21; then the LED elements 102 located in the row X02 are transferred in batches at the same time, It becomes the LED element 102 of row X22. By analogy, all the LED elements 102 on the carrier board 100 can be transferred to the carrier board 120 in batches, so that the row sequence relationship between the upper row and the row of the carrier board 100 is equal to the row sequence relationship between the upper row and the row of the carrier board 120. row order relationship. From one point of view, the matrix 121 on the carrier 120 is similar to the matrix 101 on the carrier 100, and all the LED elements 102 have the same relative position in space, but the row spacing 124H of the matrix 121 is different from the row spacing of the matrix 101. 104H. Therefore, the rows X21-X25 on the carrier 120 are respectively from the rows X01-X05 on the carrier 100; but the application is not limited thereto.

承上所述，因為是一行接著一行的批次轉移，所以行X22的LED元件102彼此之間的距離關係，將會跟行X01的LED元件102彼此之間的距離關係一樣。換言之，所有列間距124V大致都相等於相對的列間距104V。As mentioned above, because of the row-by-row batch transfer, the distance relationship between the LED elements 102 in the row X22 will be the same as the distance relationship between the LED elements 102 in the row X01. In other words, all column pitches 124V are approximately equal to the opposing column pitches 104V.

在另一實施例中，步驟S04也是一次一行地將LED元件102從載板100批次轉移到載板120，但是行與行之間的排列順序已經被改變或重新排列。舉例來說，載板120的行X21是由載板100的行X01轉移過來，載板120的行X22（鄰接行X21）則是由載板100的行X03（沒有鄰接行X01）轉移過來。換言之，步驟S04可以不只改變行與行之間的行間距，也改變了行與行之間的行順序關係。In another embodiment, step S04 also transfers the LED elements 102 from the carrier 100 to the carrier 120 in batches one row at a time, but the arrangement sequence between the rows has been changed or rearranged. For example, the row X21 of the carrier 120 is transferred from the row X01 of the carrier 100 , and the row X22 of the carrier 120 (adjacent to the row X21 ) is transferred from the row X03 of the carrier 100 (not adjacent to the row X01 ). In other words, step S04 may not only change the row spacing between rows, but also change the row sequence relationship between rows.

製作方法M01的步驟S06接續步驟S04，將LED元件102從載板120轉移到載板140，改變列與列之間的距離，但維持行與行之間的距離。如同圖1B所示，在載板140上，LED元件102排列成矩陣141，具有垂直方向的行X41-X45，以及水平方向的列Y41-Y48。圖1B舉例顯示行X44與行X45之間相距有行間距144H，以及列Y47與列Y48之間相距有列間距144V。圖1B舉例顯示，步驟S06使得載板140上的所有列間距144V大致都相等，而且，載板140上的列間距144V大於載板120上的列間距124V。步驟S04並沒有改變行與行之間的距離，所以，載板140上的所有行間距144H大致都相等，而且都大約等於載板120上的行間距124H。The step S06 of the manufacturing method M01 continues the step S04, and the LED element 102 is transferred from the carrier 120 to the carrier 140, and the distance between the columns is changed, but the distance between the rows is maintained. As shown in FIG. 1B , on the carrier board 140 , the LED elements 102 are arranged in a matrix 141 , with rows X41 - X45 in the vertical direction and columns Y41 - Y48 in the horizontal direction. FIG. 1B shows an example that there is a row spacing 144H between the row X44 and the row X45 , and a column spacing 144V between the column Y47 and the column Y48 . FIG. 1B shows that step S06 makes all the column pitches 144V on the carrier 140 approximately equal, and the column pitch 144V on the carrier 140 is greater than the column pitch 124V on the carrier 120 . Step S04 does not change the row-to-row distance, so all the row pitches 144H on the carrier 140 are approximately equal and approximately equal to the row pitch 124H on the carrier 120 .

在一實施例中，步驟S06是一次轉移一列，一列接著一列的將LED元件102從載板120批次轉移到載板140。舉例來說，載板120上位於列Y21的LED元件102，同時間批次轉移到載板140上，成為位於列Y41的LED元件102；接著批次轉移位於列Y22的LED元件102，成為列Y42的LED元件102。依此類推，可以將載板120上所有的LED元件102，批次轉移到載板140上，使得載板120上列與列之間的列順序關係，就等於載板140上列與列之間的列順序關係。從一個角度來看，載板140上的矩陣141近似於載板120上的矩陣121，所有LED元件在空間上的相對位置都一樣，只是矩陣141的列間距124V不同於矩陣121的列間距104V。所以，載板140上的列Y41- Y48分別來自載板120上的行Y21-Y28；但本申請不限於此。在一些實施例中，步驟S06可以不只改變了改變列與列之間的列間距，也改變了列與列之間的列順序關係。In one embodiment, the step S06 is to transfer one column at a time, and batch transfer the LED elements 102 from the carrier 120 to the carrier 140 row by row. For example, the LED elements 102 located in column Y21 on the carrier 120 are transferred to the carrier 140 in batches at the same time to become the LED elements 102 located in column Y41; then the LED elements 102 located in column Y22 are transferred in batches to form columns LED element 102 of Y42. By analogy, all the LED elements 102 on the carrier board 120 can be transferred to the carrier board 140 in batches, so that the column sequence relationship between the columns on the carrier board 120 is equal to the relationship between the columns on the carrier board 140 and the columns. The column order relationship between them. From one point of view, the matrix 141 on the carrier board 140 is similar to the matrix 121 on the carrier board 120, and the relative positions of all LED elements in space are the same, except that the column spacing 124V of the matrix 141 is different from the column spacing 104V of the matrix 121 . Therefore, the columns Y41-Y48 on the carrier 140 are respectively from the rows Y21-Y28 on the carrier 120; but the application is not limited thereto. In some embodiments, step S06 may not only change the column spacing between columns, but also change the column sequence relationship between columns.

從以上可知，步驟S06大致上等同於步驟S04，只是改變方向上的不同。步驟S04改變了行間距，而步驟S06改變了列間距。From the above, it can be seen that step S06 is substantially the same as step S04, except that the direction of change is different. Step S04 changes the row spacing, and step S06 changes the column spacing.

在圖1A中的製作方法M01中，步驟S04先放大行間距，而後步驟S06接續步驟S04來放大列間距，但本申請不限於此。在一實施例中，在行間距不改變下，一步驟先改變或放大列間距；之後，在列間距不改變下，另一步驟改變或放大行間距。In the manufacturing method M01 in FIG. 1A , step S04 enlarges the row spacing first, and then step S06 follows step S04 to enlarge the column spacing, but the present application is not limited thereto. In one embodiment, when the row spacing does not change, a step first changes or enlarges the column spacing; then, without changing the column spacing, another step changes or enlarges the row spacing.

圖1B中，載板140上的行間距144H與列間距144V的整數倍可以設計來分別對應到一畫素載板或是一螢幕電路載板上的一畫素行間距與一畫素列間距。在一實施例中，畫素行間距可以是行間距144H的1倍，畫素列間距是列間距144V的4倍。在其他實施例中，畫素行間距可以是行間距144H的數倍，而畫素列間距是等於列間距144V。如此，載板140上的LED元件102，可批次轉移到畫素載板上。In FIG. 1B , the integer multiples of the row pitch 144H and the column pitch 144V on the carrier 140 can be designed to correspond to the pixel row pitch and the pixel column pitch on a pixel carrier or a screen circuit carrier respectively. In an embodiment, the row pitch of pixels may be 1 time of the row pitch 144H, and the pixel column pitch may be 4 times of the column pitch 144V. In other embodiments, the pixel row pitch may be several times the row pitch 144H, while the pixel column pitch is equal to the column pitch 144V. In this way, the LED elements 102 on the carrier 140 can be transferred to the pixel carrier in batches.

圖1C顯示由四個畫素載板800所構成的一螢幕。在圖1C的實施例中，畫素載板800有排列成陣列的畫素P，每個畫素P有三個LED元件102、102x與102y，舉例來說，分別提供紅、藍、綠光。在另一個實施例中，每個畫素P有不止三個LED元件，舉例來說，可以具有四個LED元件，分別提供紅、藍、綠、青(cyan)光。在一畫素P中，LED元件可以排列成一直線，這直線可是橫的、直的、或是斜的。在一畫素P中，LED元件也可以排列成非一直線的圖案，例如：三角形、四角形。畫素載板800的畫素行間距844H等於載板140的行間距144H，畫素列間距844V等於載板140的列間距144V。在這邊，畫素行間距844H與畫素列間距844V指的是一畫素P的兩側邊在特定方向上的距離，但本申請並不限於此，也可以是兩相鄰畫素P的邊長中心點在特定方向上的距離。所以，要轉移載板140上的LED元件102到畫素載板800上，只需要從載板140上一次地將LED元件102批次轉移到畫素載板800上，不必改變行間距144H與列間距144V，製程上可以非常的快速。FIG. 1C shows a screen composed of four pixel carriers 800 . In the embodiment of FIG. 1C , the pixel carrier 800 has pixels P arranged in an array, and each pixel P has three LED elements 102 , 102x and 102y , for example, providing red, blue and green light respectively. In another embodiment, each pixel P has more than three LED elements, for example, there may be four LED elements to provide red, blue, green, and cyan light respectively. In a pixel P, the LED elements can be arranged in a straight line, and the straight line can be horizontal, straight, or oblique. In a pixel P, the LED elements can also be arranged in a non-linear pattern, such as a triangle or a quadrangle. The pixel row pitch 844H of the pixel carrier 800 is equal to the row pitch 144H of the carrier 140 , and the pixel column pitch 844V is equal to the column pitch 144V of the carrier 140 . Here, the pixel row spacing 844H and pixel column spacing 844V refer to the distance between the two sides of a pixel P in a specific direction, but this application is not limited thereto, it can also be the distance between two adjacent pixels P The distance in a specific direction from the center point of the side length. Therefore, to transfer the LED elements 102 on the carrier 140 to the pixel carrier 800, it is only necessary to transfer the LED elements 102 batches from the carrier 140 to the pixel carrier 800 one time, without changing the row spacing 144H and the pixel carrier 800. The column spacing is 144V, and the process can be very fast.

圖1D顯示由四個畫素載板800a所構成的一螢幕。圖1D與1C相似或是相同的部分，可以參考圖1C與相對應的段落，不再累述。在圖1D的實施例中，畫素載板800a的畫素行間距846H等於載板140的行間距144H，而畫素列間距846V等於載板140的列間距144V的四倍。所以，要轉移載板140上的LED元件102到畫素載板800a上，只需要從載板140上一次性地將四分之一數量的LED元件102批次轉移到畫素載板800a上，不必改變行間距144H與列間距144V，製程上可以非常的快速。舉例來說，可以用一拾取頭拾起載板140上所有要轉移的LED元件102，一次地放置到畫素載板800a上。FIG. 1D shows a screen composed of four pixel carriers 800a. For similar or identical parts in FIG. 1D and 1C , reference may be made to FIG. 1C and the corresponding paragraphs, and will not be repeated here. In the embodiment of FIG. 1D , the pixel row pitch 846H of the pixel carrier 800a is equal to the row pitch 144H of the carrier 140 , and the pixel column pitch 846V is equal to four times the column pitch 144V of the carrier 140 . Therefore, to transfer the LED elements 102 on the carrier 140 to the pixel carrier 800a, it is only necessary to transfer a quarter of the LED elements 102 batches from the carrier 140 to the pixel carrier 800a at one time. , there is no need to change the row spacing 144H and the column spacing 144V, and the manufacturing process can be very fast. For example, a pick-up head can be used to pick up all the LED elements 102 to be transferred on the carrier 140 and place them on the pixel carrier 800a at one time.

圖1A之製作方法M01，在提供載板100時，可以不必受限於畫素載板800上的畫素行間距與畫素列間距，所以可以盡量縮小載板100上的行間距104H與列間距104V，增加載板100的面積利用效率。The manufacturing method M01 of FIG. 1A, when providing the carrier 100, does not need to be limited to the pixel row spacing and pixel column spacing on the pixel carrier 800, so the row spacing 104H and column spacing on the carrier 100 can be reduced as much as possible. 104V, increasing the area utilization efficiency of the carrier board 100 .

載板100可以是一成長基板，而 LED元件102直接在該成長基板上生成。成長基板的材料可以是鍺（Ge）、砷化鎵（GaAs）、銦化磷（InP）、矽（Si）、藍寶石（Sapphire）、碳化矽（SiC）、鋁酸鋰（LiAlO ₂）、氮化鎵（GaN）、或氮化鋁（AlN）等等。在一實施例中，載板100、120與140的材料可以是矽、玻璃、藍寶石、碳化矽、熱移除膠帶（thermal release tape）、光解膠膜（UV release tape）、化學移除膠帶（Chemical release tape）、耐熱膠帶、或藍膜（Blue Tape）等等。 The carrier 100 may be a growth substrate, and the LED element 102 is directly formed on the growth substrate. The material of the growth substrate can be germanium (Ge), gallium arsenide (GaAs), indium phosphorus (InP), silicon (Si), sapphire (Sapphire), silicon carbide (SiC), lithium aluminate (LiAlO ₂ ), nitrogen gallium nitride (GaN), or aluminum nitride (AlN), etc. In one embodiment, the materials of the substrates 100 , 120 and 140 may be silicon, glass, sapphire, silicon carbide, thermal release tape, UV release tape, or chemical release tape. (Chemical release tape), heat-resistant tape, or blue film (Blue Tape), etc.

圖2A顯示其上形成有複數LED元件102的成長基板150，可以作為載板100的一實施例；圖2B與2C分別舉例顯示沿著圖2A中線BB與線CC的剖面圖。在圖2A中，LED元件102完全地佈滿了整個成長基板150，但是在成長基板150邊緣的一些LED元件102並沒有完整的結構。在其他實施例中，成長基板150上的LED元件102都有完整的結構。圖2B顯示了LED元件102形成於成長基板150，每個LED元件102具有朝上的正電極152p及負電極152n。當施加適當的電壓於正電極152 p及/或負電極152n上時，可以使得LED元件102中的一發光層發光。FIG. 2A shows a growth substrate 150 on which a plurality of LED elements 102 are formed, which can be used as an embodiment of the carrier 100; FIGS. 2B and 2C show cross-sectional views along line BB and line CC in FIG. 2A respectively. In FIG. 2A , the LED elements 102 completely cover the entire growth substrate 150 , but some LED elements 102 at the edge of the growth substrate 150 do not have a complete structure. In other embodiments, the LED elements 102 on the growth substrate 150 have a complete structure. FIG. 2B shows that the LED elements 102 are formed on the growth substrate 150, and each LED element 102 has a positive electrode 152p and a negative electrode 152n facing upward. When an appropriate voltage is applied to the positive electrode 152p and/or the negative electrode 152n, a light-emitting layer in the LED element 102 can be made to emit light.

圖3A顯示成長基板150上曝光區域164中，數個LED元件102被雷射光束照射。圖3B顯示圖2B中的數個LED元件102，因為雷射光束（Laser Beam）168照射而脫離了成長基板150，並透過黏著層162，黏著於載板160上。因此，LED元件102從成長基板150，轉移到載板160。圖3C顯示圖2C中，曝光區域164中的LED元件102a轉移到載板160上。圖3C中，曝光區域164以外的區域內，因為遮光板166阻擋了雷射光束168，所以LED元件102停留在成長基板150上。圖3D、3E分別與圖3B、3C類似，但是沒有遮光板166。在圖3D、3E中，雷射光束168具備了類似線光源的預設光型，只會照射到曝光區域164所涵蓋的排列成一直線的LED元件102，並沒有照射到其他的LED元件102。所以，只有曝光區域164內的LED元件102轉移到載板160上。FIG. 3A shows that several LED elements 102 are irradiated by laser beams in the exposure area 164 on the growth substrate 150 . FIG. 3B shows that several LED elements 102 in FIG. 2B are detached from the growth substrate 150 due to the irradiation of a laser beam (Laser Beam) 168 , and are adhered to the carrier 160 through the adhesive layer 162 . Therefore, the LED element 102 is transferred from the growth substrate 150 to the carrier 160 . FIG. 3C shows that the LED elements 102 a in the exposed area 164 are transferred onto the carrier 160 in FIG. 2C . In FIG. 3C , in the area other than the exposure area 164 , because the light shielding plate 166 blocks the laser beam 168 , the LED element 102 stays on the growth substrate 150 . FIGS. 3D and 3E are similar to FIGS. 3B and 3C respectively, but without the gobo 166 . In FIGS. 3D and 3E , the laser beam 168 has a preset light pattern similar to a line light source, and only irradiates the LED elements 102 arranged in a line covered by the exposure area 164 , and does not irradiate other LED elements 102 . Therefore, only the LED elements 102 in the exposed area 164 are transferred to the carrier 160 .

圖4顯示了依據本申請所實施的一種雷射轉移裝置A01，用來將LED元件102從成長基板150轉移到載板160。雷射轉移裝置A01具有雷射模組204、供體載具（Donor Stage）202、以及受體載具（Receiving Stage）206。舉例來說，雷射模組204具有，但不限於，雷射產生器、光束外型調整系統（Beam Shaping Optical System）、可調整之光圈（Adjustable Aperture）、光罩（Optical Mask）等等，用來產生具有預設切面圖形的雷射光束168。舉例來說，雷射光束168可以具備了類似線光源的光型。供體載具202承載成長基板150，並且可以相對於雷射模組204在一個預定平面上進行二維移動，以使得雷射光束168照射到陣列中選定的一個或是多個排列成一直線的LED元件102。受體載具206承載載板160，可以相對於供體載具202在一個預定平面上進行二維移動，可使被雷射光束168照射到的LED元件102轉移到載板160所預設的位置。圖4顯示雷射模組204提供雷射光束168。供體載具202水平地移動成長基板150，使得雷射光束168僅僅照射到包含有LED元件102e的一行LED元件，讓LED元件102e與同行LED元件容易自成長基板150被剝離。受體載具206也水平地移動，使得LED元件102e與同行LED元件被剝離時，透過黏著層162，LED元件102e穩定地黏著於載板160上的位置102ee。換言之，雷射轉移裝置A01可以使得雷射光束168、LED元件102e、以及位置102ee大致對齊。運用一樣的過程，圖4也顯示LED元件102b、102c與102d經過雷射光束168照射後，從成長基板150轉移至載板160上。供體載具202每次的水平移動距離，跟受體載具206每次的水平移動距離不同。因此，從圖4可以看出，載板160上LED元件102b與LED元件102c之間的行間距（或是間距），會大於LED元件102b與LED元件102c先前在成長基板150上彼此之間的行間距（或是間距）。雷射轉移裝置A01可以實現圖1A中的步驟S04，用來改變或放大行間距或是列間距。FIG. 4 shows a laser transfer device A01 implemented according to the present application, which is used to transfer the LED device 102 from the growth substrate 150 to the carrier 160 . The laser transfer device A01 has a laser module 204 , a donor stage (Donor Stage) 202 , and a recipient stage (Receiving Stage) 206 . For example, the laser module 204 has, but is not limited to, a laser generator, a beam shaping optical system (Beam Shaping Optical System), an adjustable aperture (Adjustable Aperture), a reticle (Optical Mask), etc. Used to generate a laser beam 168 with a preset sectional pattern. For example, the laser beam 168 may have a light pattern similar to a line light source. The donor carrier 202 carries the growth substrate 150, and can move two-dimensionally on a predetermined plane relative to the laser module 204, so that the laser beam 168 irradiates the selected one or more arrays in the array. LED element 102 . The receptor carrier 206 carries the carrier plate 160 and can move two-dimensionally relative to the donor carrier 202 on a predetermined plane, so that the LED element 102 irradiated by the laser beam 168 can be transferred to the preset position of the carrier plate 160. Location. FIG. 4 shows laser module 204 providing laser beam 168 . The donor carrier 202 moves the growth substrate 150 horizontally, so that the laser beam 168 only irradiates a row of LED elements including the LED element 102e, so that the LED element 102e and the LED elements of the same row are easily peeled off from the growth substrate 150. The receiver carrier 206 also moves horizontally, so that when the LED element 102e is peeled off from the same LED element, the LED element 102e is stably adhered to the position 102ee on the carrier 160 through the adhesive layer 162 . In other words, the laser transfer device A01 can substantially align the laser beam 168, the LED element 102e, and the position 102ee. Using the same process, FIG. 4 also shows that the LED elements 102 b , 102 c , and 102 d are transferred from the growth substrate 150 to the carrier 160 after being irradiated by the laser beam 168 . The horizontal movement distance of the donor carrier 202 each time is different from the horizontal movement distance of the recipient carrier 206 each time. Therefore, it can be seen from FIG. 4 that the row spacing (or spacing) between the LED elements 102b and the LED elements 102c on the carrier board 160 will be greater than the previous distance between the LED elements 102b and the LED elements 102c on the growth substrate 150. Line spacing (or spacing). The laser transfer device A01 can implement step S04 in FIG. 1A to change or enlarge the row spacing or the column spacing.

圖5A-5E顯示拾取頭169將數個LED元件102從其上形成有LED元件的成長基板150轉移到載板160的製程。在圖5A中，成長基板150僅僅是一個例子，並非用以限制本申請的範圍。在本申請的其他實施例中，成長基板150可以是替換為具有黏著層的一承載基板，例如熱移除膠帶、光解膠膜、化學移除膠帶、耐熱膠帶、或藍膜。FIGS. 5A-5E show a process in which a pick-up head 169 transfers a plurality of LED devices 102 from a growth substrate 150 on which the LED devices are formed to a carrier 160 . In FIG. 5A , the growth substrate 150 is just an example, and is not intended to limit the scope of the present application. In other embodiments of the present application, the growth substrate 150 may be replaced by a carrier substrate with an adhesive layer, such as thermal removal tape, photolytic adhesive film, chemical removal tape, heat-resistant tape, or blue film.

如同圖5A與5B所示，拾取頭169貼住成長基板150上一行LED元件102。圖5C顯示LED元件102脫離了成長基板150，貼付於拾取頭169上。圖5D顯示拾取頭169與載板160一起將LED元件102夾於其中。圖5E顯示拾取頭169離開，遺留下LED元件102，透過黏著層162固定於載板160上。As shown in FIGS. 5A and 5B , the pick-up head 169 sticks to a row of LED elements 102 on the growth substrate 150 . FIG. 5C shows that the LED element 102 is detached from the growth substrate 150 and attached to the pick-up head 169 . FIG. 5D shows that the pick-up head 169 clamps the LED element 102 together with the carrier plate 160 . FIG. 5E shows that the pick-up head 169 leaves, leaving the LED element 102 fixed on the carrier 160 through the adhesive layer 162 .

圖6A顯示成長基板150上一區域的數個LED元件102被批次轉移到載板180上。舉例來說，可以用圖3A-3C所介紹的雷射剝離方法，或是圖5A-5E所介紹的拾取頭169製程，將成長基板150之區域170內的數個LED元件102，轉移到載板180上。區域170可以是成長基板150上最大、可以涵蓋完整之LED元件102的正方形，例如是一個成長基板150的最大內接正方形。在一些實施例中，成長基板150被切割，區域170內的LED元件102以及位於其下方的部分成長基板150一同被轉移到載板180上。如此轉移了數個區域170後，可以得到如圖6A中下半部的載板180。載板180可以作為圖1A與1B中的載板100用於進行兩次轉移，以生產具有行間距144H與列間距144V的載板140。FIG. 6A shows that several LED devices 102 in a region on the growth substrate 150 are batch-transferred onto the carrier 180 . For example, the laser lift-off method described in FIGS. 3A-3C , or the pick-up head 169 process described in FIGS. plate 180 on. The area 170 can be the largest square on the growth substrate 150 that can cover the entire LED element 102 , for example, the largest inscribed square of the growth substrate 150 . In some embodiments, the growth substrate 150 is cut, and the LED elements 102 in the area 170 and a part of the growth substrate 150 located therebelow are transferred onto the carrier 180 together. After transferring several regions 170 in this way, a carrier 180 as shown in the lower half of FIG. 6A can be obtained. The carrier 180 can be used as the carrier 100 in FIGS. 1A and 1B for two transfers to produce the carrier 140 with a row pitch 144H and a column pitch 144V.

從圖6A可以看出，成長基板150之區域170以外的LED元件102很可能被浪費掉。圖6B顯示批次轉移成長基板150之一區塊172內的LED元件102，到載板180上，可以用雷射剝離、拾取頭等的方法。部分之成長基板150，在切割後，也可以隨著區塊172內之LED元件102，一同被轉移到載板180上。轉移數個區塊172後，可以得到如圖6B下半部的載板180。載板180可以作為圖1A與1B中的載板100，經過兩次轉移後，可以產出具有行間距144H與列間距144V的載板140。It can be seen from FIG. 6A that the LED elements 102 outside the region 170 of the growth substrate 150 are likely to be wasted. FIG. 6B shows batch transfer of the LED elements 102 in a block 172 of the growth substrate 150 onto the carrier 180 by methods such as laser lift-off, pick-up head, and the like. Part of the growth substrate 150 may also be transferred to the carrier 180 together with the LED elements 102 in the block 172 after dicing. After transferring several blocks 172, a carrier 180 as shown in the lower half of FIG. 6B can be obtained. The carrier 180 can be used as the carrier 100 in FIGS. 1A and 1B . After two transfers, the carrier 140 with a row pitch 144H and a column pitch 144V can be produced.

圖6B也顯示了，原本在成長基板150的兩相鄰區塊172，在轉移到載板180上後，不必然相鄰。換言之，在成長基板150上的所有區塊172的相對位置，可以在載板180上被重新安排。這樣的好處為：可以使得載板180上的LED元件102在視覺效果上，大致上是一致的。舉例來說，在成長基板150上，可能因為製程不平整性的問題，靠近成長基板150左半邊的LED元件102，會跟靠近成長基板150右半邊的LED元件102，儘管都符合製造標準，但仍有肉眼可辨的差異。如果LED元件102依照圖6A的方式轉移到載板180上，左右兩半邊（大範圍區域）之間的顯著差異，將完整的複製到載板180上，依然存在。圖6A之載板180，視覺上可能依然可以看出左右兩半邊之間的不同。然而，依照圖6B的方式，LED元件102轉移到載板180上後，原本位於不同半邊的區塊172，有機會可以彼此混雜在一起，因此，圖6B之載板180就可能可以減少或是消彌大區域範圍之間的差異，視覺上呈現一致性。FIG. 6B also shows that two adjacent blocks 172 originally on the growth substrate 150 are not necessarily adjacent after being transferred to the carrier 180 . In other words, the relative positions of all the blocks 172 on the growth substrate 150 can be rearranged on the carrier 180 . The advantage of this is that the visual effect of the LED elements 102 on the carrier board 180 can be substantially consistent. For example, on the growth substrate 150, the LED elements 102 close to the left half of the growth substrate 150 may be different from the LED elements 102 close to the right half of the growth substrate 150 due to the unevenness of the manufacturing process. There are still visible differences. If the LED element 102 is transferred to the carrier board 180 in the manner shown in FIG. 6A , the significant difference between the left and right halves (large areas) will be fully replicated on the carrier board 180 and still exist. In the carrier board 180 shown in FIG. 6A , the difference between the left and right halves may still be seen visually. However, according to the method of FIG. 6B, after the LED components 102 are transferred to the carrier board 180, the blocks 172 originally located on different halves may be mixed with each other. Therefore, the carrier board 180 of FIG. 6B may be reduced or Eliminates the differences between large areas and presents visual consistency.

請參閱圖7A與7B，其顯示成長基板150上的LED元件102轉移到暫時基板190的剖面圖。圖7A接續圖2B，使如圖2B中具有LED元件102的成長基板150上下翻轉，與下方具有黏著層192的暫時基板190相對，以使後續轉移到暫時基板190上的LED元件102的正負電極朝下。接著，每個LED元件102透過正電極152p及負電極152n以及黏著層192，黏著固定於暫時基板190上。圖7B顯示成長基板150脫離，遺留下LED元件102在暫時基板190的表面。圖8顯示暫時基板190上具有LED元件102，其排列成的矩陣，大致映射成長基板150上之LED元件102所構成的矩陣。需注意的是，在圖8之實施例中，在成長基板150上不完整的LED元件102，不會轉移至暫時基板190。在另一實施例不完整的LED元件102也被轉移至暫時基板190上。接著，這樣具有電極朝下之LED元件102的暫時基板190，便可以繼續採用圖1A之製作方法M01以及先前所述的轉移方法，來增大行間距以及列間距。Please refer to FIGS. 7A and 7B , which show cross-sectional views of the LED device 102 on the growth substrate 150 being transferred to the temporary substrate 190 . 7A is a continuation of FIG. 2B , so that the growth substrate 150 with the LED element 102 as shown in FIG. 2B is turned upside down, facing the temporary substrate 190 with the adhesive layer 192 below, so that the positive and negative electrodes of the LED element 102 that are subsequently transferred to the temporary substrate 190 face down. Next, each LED element 102 is adhered and fixed on the temporary substrate 190 through the positive electrode 152p, the negative electrode 152n and the adhesive layer 192 . FIG. 7B shows that the growth substrate 150 is detached, leaving the LED device 102 on the surface of the temporary substrate 190 . FIG. 8 shows that there are LED elements 102 on the temporary substrate 190 , and the matrix arranged therein roughly mirrors the matrix formed by the LED elements 102 on the growth substrate 150 . It should be noted that in the embodiment of FIG. 8 , the incomplete LED elements 102 on the growth substrate 150 will not be transferred to the temporary substrate 190 . In another embodiment incomplete LED elements 102 are also transferred onto the temporary substrate 190 . Then, the temporary substrate 190 with the LED elements 102 with the electrodes facing down can continue to use the manufacturing method M01 in FIG. 1A and the transfer method described above to increase the row pitch and the column pitch.

在一些實施例中，LED元件可以是封裝後的LED晶粒。圖9A-9C顯示在暫時基板190上封裝LED元件102的過程。In some embodiments, the LED component may be a packaged LED die. 9A-9C illustrate the process of encapsulating LED elements 102 on a temporary substrate 190 .

圖9A接續圖7B，在暫時基板190上形成光轉換層193。舉例來說，可以用旋轉塗佈（Spin Coating）的方式，將光轉換層193配置在暫時基板190上。在一實施例中，光轉換層193為量子點光阻劑(Quantum Dot Resist)，本身的形狀可以圖案化，後續也可以轉換穿過此光轉換層193的藍光或是紫外光，使其成為預設頻率或是波長的光線。FIG. 9A continues FIG. 7B , and a light conversion layer 193 is formed on a temporary substrate 190 . For example, the light conversion layer 193 may be disposed on the temporary substrate 190 by means of spin coating. In one embodiment, the light conversion layer 193 is a quantum dot photoresist (Quantum Dot Resist), the shape itself can be patterned, and the blue light or ultraviolet light passing through the light conversion layer 193 can also be converted later to make it a Light of a predetermined frequency or wavelength.

圖9B接續圖9A，用曝光顯影或是雷射切割的方式，去除掉部分位於LED元件102之間的光轉換層193，形成數片不相連的光轉換層193。每片光轉換層193僅包覆一LED元件102。換言之，圖9B顯示圖案化（Pattern）光轉換層193的步驟。FIG. 9B continues FIG. 9A , using exposure and development or laser cutting to remove part of the light conversion layer 193 located between the LED elements 102 to form several unconnected light conversion layers 193 . Each light conversion layer 193 covers only one LED element 102 . In other words, FIG. 9B shows the step of patterning the light conversion layer 193 .

圖9C接續圖9B，可以用類似形成光轉換層193的方法，先塗佈，後圖案化，來形成數片不相連的濾光層194。每片濾光層194包覆住一片光轉換層193以及一個LED元件102。舉例來說，濾光層194用以大致阻擋LED元件102所發出但未被光轉換層193轉換的光線，但允許光轉換層193所產生的光線通過。LED元件102p為帶有濾光層194與光轉換層193的LED元件。FIG. 9C is a continuation of FIG. 9B . A method similar to the formation of the light conversion layer 193 can be used to form several discrete filter layers 194 by first coating and then patterning. Each filter layer 194 covers one light conversion layer 193 and one LED element 102 . For example, the filter layer 194 is used to substantially block the light emitted by the LED element 102 but not converted by the light conversion layer 193 , but allows the light generated by the light conversion layer 193 to pass through. The LED element 102 p is an LED element with a filter layer 194 and a light conversion layer 193 .

舉例來說，圖9C中的LED元件102p可以是一綠光LED元件。LED元件102可以是一紫外光LED晶粒。光轉換層193用以將LED元件102所發出的紫外光轉換為綠光。濾光層194大致阻擋光轉換層193未轉換成功而穿透過去的紫外光，但容許光轉換層193所產生的綠光通過。換言之，濾光層194可以避免漏出的紫外光傷害人體。LED元件102p也可以選擇採用不同於紫外光LED晶粒的其他顏色LED晶粒，也可以設計來產生不同於綠色的光線，只要選用適當的光轉換層193以及濾光層194。For example, the LED element 102p in FIG. 9C may be a green LED element. The LED element 102 may be an ultraviolet LED die. The light converting layer 193 is used for converting the ultraviolet light emitted by the LED element 102 into green light. The filter layer 194 roughly blocks the ultraviolet light that is not successfully converted by the light conversion layer 193 and passes through, but allows the green light generated by the light conversion layer 193 to pass through. In other words, the filter layer 194 can prevent the leaked ultraviolet light from harming the human body. The LED element 102p can also choose to use other color LED grains than ultraviolet LED grains, and can also be designed to generate light different from green, as long as the appropriate light conversion layer 193 and filter layer 194 are selected.

接著，圖9C中的暫時基板190，可以作為圖1B中的載板100，再經歷圖1A與1B中所揭示的兩次轉移，將LED元件轉移至載板140。載板140上具有如圖9C中的LED元件102p，可以產生特定顏色的光線。Next, the temporary substrate 190 in FIG. 9C can be used as the carrier 100 in FIG. 1B , and undergoes two transfers disclosed in FIGS. 1A and 1B to transfer the LED components to the carrier 140 . The carrier board 140 has an LED element 102p as shown in FIG. 9C , which can generate light of a specific color.

在另一個實施例中，可以將圖9C中的暫時基板190上的LED元件102p，採用圖6A或6B中的方法，先轉移到載板180上。載板180可以作為圖1A與1B中的載板100，進行兩次LED元件轉移，來生產出載板140。In another embodiment, the LED elements 102p on the temporary substrate 190 shown in FIG. 9C can be transferred to the carrier board 180 by using the method shown in FIG. 6A or 6B. The carrier 180 can be used as the carrier 100 in FIGS. 1A and 1B , and the LED element is transferred twice to produce the carrier 140 .

圖9A-9C所顯示的方法，可以用來快速量產製造出具有濾光層194與光轉換層193的LED元件102p。The method shown in FIGS. 9A-9C can be used to rapidly mass-produce the LED element 102p having the filter layer 194 and the light conversion layer 193 .

在暫時基板190上生產具有帶有濾光層194與光轉換層193的LED元件102p，可以節省濾光層194與光轉換層193的使用量。如同先前所述，因為圖1A與1B中所揭示的兩次LED元件轉換，所以圖9C中LED元件102p彼此之間的列間距或是行間距，都不會受到一畫素載板上的畫素行間距與畫素列間距的限制，可以盡量的縮小。換言之，圖9C中LED元件102p彼此之間的距離，只要留下足夠的寬度，足以避免相鄰LED元件102p彼此因為濾光層194與光轉換層193去除不乾淨而相連。因此，為了生產LED元件102p所消耗掉的濾光層194與光轉換層193就可以最少化，避免價格高貴之濾光層194與光轉換層193的損耗，節省生產上的成本。Manufacturing the LED element 102p with the filter layer 194 and the light conversion layer 193 on the temporary substrate 190 can save the usage of the filter layer 194 and the light conversion layer 193 . As previously mentioned, because of the two LED element transitions disclosed in FIGS. 1A and 1B , the column spacing or row spacing between the LED elements 102p in FIG. The limitation of pixel row spacing and pixel column spacing can be reduced as much as possible. In other words, as long as the distance between the LED elements 102p in FIG. 9C is sufficient, it is enough to avoid the adjacent LED elements 102p from being connected to each other due to the unclean removal of the filter layer 194 and the light conversion layer 193 . Therefore, the consumption of the filter layer 194 and the light conversion layer 193 for the production of the LED element 102p can be minimized, avoiding the loss of the expensive filter layer 194 and the light conversion layer 193, and saving production costs.

圖9C中的LED元件102p也適用於畫素封裝結構（Pixel Package），畫素封裝結構是可以作為一個螢幕上的一個畫素的封裝結構。畫素封裝結構包含可以被獨立控制並發出不同色光的三個以上LED元件，例如，藍色、綠色、紅色LED元件，LED元件可以採用表面貼裝技術（Surface Mount Technology；SMT）貼付焊接在一電路基板上並被封裝層覆蓋。The LED element 102p in FIG. 9C is also applicable to a pixel package structure (Pixel Package), which is a package structure that can be used as a pixel on a screen. The pixel package structure contains more than three LED components that can be independently controlled and emit different colors of light, for example, blue, green, and red LED components. The LED components can be soldered together by surface mount technology (Surface Mount Technology; SMT) on the circuit substrate and covered by the encapsulation layer.

圖10A顯示畫素封裝結構500a，包含有藍色LED元件102B、綠色LED元件102G、以及紅色LED元件102R，都以SMT技術固定於電路基板504上。電路基板504具有金屬佈線506，用來改變LED元件102B、102G與102R的電性連接位置。畫素封裝結構500a並具有透明的封裝層（Transparent Encapsulation Layer）502，保護LED元件102B、102G與102R免於受到外界水氣的破壞。LED元件102B、102G與102R都可以採用圖7A-圖9C的方法來製造。舉例來說，綠色LED元件102G具有紫外光LED晶粒102v、光轉換層193G中的綠色量子點用以轉換紫外光LED晶粒102v所發出的紫外光而發出綠光、以及濾光層194大致阻擋LED晶粒102v所發出的紫外光。在圖10A中，LED元件102B、102G與102R彼此的差異在於擁有不同的光轉換層。綠色LED元件102G的光轉換層193G用來發出綠光，藍色LED元件102B中的光轉換層193B用來發出藍光，而紅色LED元件102R中的光轉換層193R用來發出紅光。FIG. 10A shows a pixel package structure 500a, including a blue LED element 102B, a green LED element 102G, and a red LED element 102R, all of which are fixed on a circuit substrate 504 by SMT technology. The circuit substrate 504 has metal wires 506 for changing the electrical connection positions of the LED elements 102B, 102G and 102R. The pixel encapsulation structure 500 a also has a transparent encapsulation layer 502 to protect the LED elements 102B, 102G and 102R from being damaged by external moisture. The LED elements 102B, 102G and 102R can be manufactured by the method shown in FIGS. 7A-9C . For example, the green LED element 102G has an ultraviolet LED die 102v, green quantum dots in the light conversion layer 193G are used to convert the ultraviolet light emitted by the ultraviolet LED die 102v to emit green light, and the filter layer 194 is approximately Block the ultraviolet light emitted by the LED die 102v. In FIG. 10A , the LED elements 102B, 102G and 102R differ from each other in that they have different light conversion layers. The light conversion layer 193G in the green LED element 102G is used to emit green light, the light conversion layer 193B in the blue LED element 102B is used to emit blue light, and the light conversion layer 193R in the red LED element 102R is used to emit red light.

圖10B顯示畫素封裝結構500b，其相同或是類似於圖10A之部分，可參考先前說明與相關圖式。畫素封裝結構500b包含有藍色LED元件102BL、綠色LED元件102G、以及紅色LED元件102R。藍色LED元件102BL為未封裝的藍光LED晶粒102bl，並沒有被光轉換層與濾光層包覆。在圖10B中，綠色LED元件102G以及紅色LED元件102R都採用藍光LED晶粒102bl作為光源。因此，舉例來說，光轉換層193G其中的量子點（quantum dot）是可以轉換藍光而產生綠光，而濾光層194用來阻擋未被光轉換層193G轉換而漏出的藍光；光轉換層193R其中的量子點是可以轉換藍光而產生紅光，而濾光層194用來阻擋未被光轉換層193G轉換而漏出的藍光。相較於畫素封裝結構500a，畫素封裝結構500b另外有不透明之遮光層508。遮光層508的表面大致與藍色LED元件102BL之表面切齊或接近。遮光層508可以避免藍色LED元件102BL所發出的藍光，射入鄰近綠色LED元件102G以及紅色LED元件102R中而導致其發光。FIG. 10B shows a pixel packaging structure 500b, which is the same or similar to that in FIG. 10A , and reference may be made to previous descriptions and related drawings. The pixel packaging structure 500b includes a blue LED element 102BL, a green LED element 102G, and a red LED element 102R. The blue LED element 102BL is an unpackaged blue LED chip 102b1, which is not covered by the light conversion layer and the filter layer. In FIG. 10B , both the green LED element 102G and the red LED element 102R use the blue LED die 102b1 as the light source. Therefore, for example, the quantum dot (quantum dot) in the light conversion layer 193G can convert blue light to generate green light, and the filter layer 194 is used to block the blue light that is not converted by the light conversion layer 193G and leaks; the light conversion layer The quantum dots in 193R can convert blue light to generate red light, and the filter layer 194 is used to block the blue light that is not converted by the light conversion layer 193G and leaks out. Compared with the pixel packaging structure 500a, the pixel packaging structure 500b additionally has an opaque light-shielding layer 508 . The surface of the light-shielding layer 508 is substantially aligned with or close to the surface of the blue LED element 102BL. The light-shielding layer 508 can prevent the blue light emitted by the blue LED element 102BL from entering into the adjacent green LED element 102G and the red LED element 102R to cause them to emit light.

為了防止LED元件彼此之間的光串擾（Cross Talk），圖10A之畫素封裝結構500a也可以採用類似圖10B中的遮光層508，形成於封裝層502與電路基板504之間，隔開LED元件102B、102G與102R。In order to prevent optical crosstalk between LED elements (Cross Talk), the pixel package structure 500a in FIG. 10A can also use a light-shielding layer 508 similar to that in FIG. 10B, which is formed between the packaging layer 502 and the circuit substrate 504 to separate the LEDs Elements 102B, 102G and 102R.

圖11顯示畫素封裝結構500c，其相同或是類似於圖10A與10B之部分，可參考先前說明與相關圖式。與畫素封裝結構500a與500b不同的，畫素封裝結構500c中，綠色LED元件102G、紅色LED元件102R與藍色LED元件102B所分別使用的光轉換層193G、193R與193B，並沒有完全包覆了紫外光LED晶粒102v，而只有覆蓋在紫外光LED晶粒102v的上方。在圖11中，紫外光LED晶粒102v的側壁則被遮光層508所遮蔽。FIG. 11 shows a pixel packaging structure 500c, which is the same as or similar to FIG. 10A and 10B, and reference may be made to previous descriptions and related drawings. Different from the pixel packaging structures 500a and 500b, in the pixel packaging structure 500c, the light conversion layers 193G, 193R, and 193B respectively used by the green LED element 102G, the red LED element 102R, and the blue LED element 102B are not completely encapsulated. The UV LED chip 102v is covered, and only the top of the UV LED chip 102v is covered. In FIG. 11 , the sidewall of the ultraviolet LED chip 102v is shielded by the light shielding layer 508 .

以下將說明，相較於生產畫素封裝結構500a與500b，在生產畫素封裝結構500c的過程中，光轉換層193G、193R與193B是如何的被浪費。圖12A到12C顯示生產畫素封裝結構500c的製程剖面圖，其與圖10A與10B相同或相似之部分，可參考先前說明與相關圖式。It will be described below how the light conversion layers 193G, 193R and 193B are wasted in the process of producing the pixel package structure 500c compared to the process of producing the pixel package structure 500a and 500b. FIGS. 12A to 12C show cross-sectional views of the manufacturing process of the pixel package structure 500c. For parts that are the same or similar to those in FIGS. 10A and 10B , please refer to the previous description and related drawings.

圖12A顯示遮光層508在三個紫外光LED晶粒102v上面形成三個孔洞510G、510R與510B。舉例來說，可以先在紫外光LED晶粒102v上塗佈上遮光層508，然後用區域性的蝕刻方式，去除掉紫外光LED晶粒102v上方的遮光層508，產生三個孔洞510G、510R與510B。在這邊，除了塗佈製程之外，也可以透過壓合的製程方式將一整片的遮光層508配置在紫外光晶粒102v上方。FIG. 12A shows that the light-shielding layer 508 forms three holes 510G, 510R and 510B on the three UV LED dies 102v. For example, the light-shielding layer 508 can be coated on the ultraviolet LED die 102v first, and then the light-shielding layer 508 above the ultraviolet LED die 102v can be removed by regional etching to produce three holes 510G, 510R with 510B. Here, in addition to the coating process, a whole piece of light-shielding layer 508 can also be disposed on the ultraviolet light chip 102v through a lamination process.

圖12B顯示在圖12A上均勻地塗佈上光轉換層193G，使其填滿孔洞510G、510R與510B。舉例來說，光轉換層193G為量子點光阻劑(Quantum Dot Resist)。圖12C顯示圖12B中的光轉換層193G，經過曝光顯影後，只有遺留下部分填入孔洞510G，其他的光轉換層193G都移除。圖12B與12C顯示如何在孔洞510G中填入光轉換層193G。類似的方法，可以在孔洞510R中填入光轉換層193R，在孔洞510B中填入光轉換層193B，如同圖12D所示。之後，可以用研磨的方式，去除圖12D中，光轉換層193G 、193R與193B凸出於孔洞510G、510R與510B之部分，使得光轉換層193G 、193R、193B與遮光層508共平面（未繪示）。接著，塗佈上濾光層194與封裝層502，完成圖11中的畫素封裝結構500c。FIG. 12B shows that the upper light converting layer 193G is uniformly coated on FIG. 12A to fill holes 510G, 510R and 510B. For example, the light conversion layer 193G is a quantum dot photoresist (Quantum Dot Resist). FIG. 12C shows the light conversion layer 193G in FIG. 12B . After exposure and development, only the remaining part fills the hole 510G, and the other light conversion layer 193G is removed. 12B and 12C show how to fill the hole 510G with the light conversion layer 193G. In a similar way, the light conversion layer 193R can be filled in the hole 510R, and the light conversion layer 193B can be filled in the hole 510B, as shown in FIG. 12D . Afterwards, in FIG. 12D, parts of the light conversion layers 193G, 193R, and 193B protruding from the holes 510G, 510R, and 510B can be removed by grinding, so that the light conversion layers 193G, 193R, and 193B are coplanar with the light shielding layer 508 (not shown). drawn). Next, the upper filter layer 194 and the encapsulation layer 502 are coated to complete the pixel encapsulation structure 500c in FIG. 11 .

請參閱圖12C，光轉換層193G的利用率σG，可以定義為圖12C中留下來的光轉換層193G自俯視圖觀察的表面面積532G，除以圖12C中畫素封裝結構500c自俯視圖觀察的整個表面面積530。在實務上，因為綠色LED元件102G，相較於畫素封裝結構500c的整個表面面積530，所占的面積非常的小，所以圖12C之光轉換層193G的利用率σG可能只有大約2%。量子點光阻劑是昂貴的。圖12C中，超過9成以上的昂貴的光轉換層193G被浪費掉的，就畫素封裝結構的量產成本而言，是非常不利的。Please refer to FIG. 12C, the utilization ratio σG of the light conversion layer 193G can be defined as the remaining surface area 532G of the light conversion layer 193G viewed from the top view in FIG. Surface area 530. In practice, since the green LED element 102G occupies a very small area compared to the entire surface area 530 of the pixel packaging structure 500c, the utilization ratio σG of the light conversion layer 193G in FIG. 12C may only be about 2%. Quantum dot photoresists are expensive. In FIG. 12C , more than 90% of the expensive light conversion layer 193G is wasted, which is very unfavorable in terms of mass production cost of the pixel packaging structure.

請參閱圖9B。圖9B中，光轉換層193的利用率σ’，可以定義為圖9B中留下來的光轉換層193自俯視圖觀察的上表面面積，除以圖9B中暫時基板190整個自俯視圖觀察的上表面面積。圖9B中，LED元件單元面積130等於元件淨面積130C與分隔區域130T的總和。圖9B中，光轉換層193的利用率σ’大約會等於元件淨面積130C，除以LED元件單元面積130。實務上，圖9B中光轉換層193的利用率σ’，可以高達70%以上，遠遠高於圖12C中2%的利用率σG，可以大幅減少生產成本。所以採用圖9A-9C的方式來量產圖10A與10B中的畫素封裝結構500a與500b，具有量產成本上的優勢。See Figure 9B. In FIG. 9B, the utilization rate σ' of the light conversion layer 193 can be defined as the upper surface area of the light conversion layer 193 left in FIG. 9B viewed from the top view, divided by the entire upper surface of the temporary substrate 190 viewed from the top view in FIG. 9B area. In FIG. 9B , the LED element unit area 130 is equal to the sum of the element net area 130C and the separation area 130T. In FIG. 9B , the utilization rate σ' of the light conversion layer 193 is approximately equal to the net area 130C of the element divided by the unit area 130 of the LED element. In practice, the utilization rate σ' of the light conversion layer 193 in FIG. 9B can be as high as 70%, which is much higher than the utilization rate σG of 2% in FIG. 12C , which can greatly reduce the production cost. Therefore, mass production of the pixel packaging structures 500 a and 500 b shown in FIGS. 10A and 10B in the manner of FIGS. 9A-9C has advantages in terms of mass production cost.

在一實施例中，成長基板150可以先預先形成一粗糙表面，使得之後形成的LED元件也相對應的具有一粗糙出光面。圖13A顯示LED元件102z形成於成長基板150x，成長基板150x上有預先處理形成的凹陷，構成一粗糙表面。圖13A與圖2A相同或相似之部分，可參考先前說明與相關圖式。圖13B顯示畫素封裝結構500d，其相同或是類似於圖10A之部分，可參考先前說明與相關圖式。簡單的說，畫素封裝結構500d採用圖13A中的LED元件102z作為主要的光源。LED元件102z具有粗糙出光面144，可以增加LED元件102z的光摘出率，也就是LED元件102z的發光層透過粗糙出光面144所射出的光量會增加。LED元件102z的粗糙出光面144也可以增加圖13B中光轉換層193G、193R以及濾光層194附著於LED元件102z的黏著力。於一實施例中，粗糙出光面144的粗糙結構的尺寸大於LED元件102z的發光波長，LED元件102z的一部份光線會穿過粗糙出光面144，另一部分光線會被粗糙出光面144反射，在粗糙出光面144的兩側形成漫射光（Diffusion Light）。In one embodiment, the growth substrate 150 may be pre-formed with a rough surface, so that the LED elements formed later also have a corresponding rough light-emitting surface. FIG. 13A shows that the LED element 102z is formed on the growth substrate 150x, and the growth substrate 150x has pre-processed depressions to form a rough surface. For the same or similar parts in FIG. 13A as in FIG. 2A , reference may be made to the previous description and related drawings. FIG. 13B shows a pixel packaging structure 500d, which is the same or similar to that in FIG. 10A , and reference may be made to the previous description and related drawings. In short, the pixel package structure 500d uses the LED element 102z shown in FIG. 13A as the main light source. The LED element 102z has a rough light-emitting surface 144, which can increase the light extraction rate of the LED element 102z, that is, the amount of light emitted by the light-emitting layer of the LED element 102z through the rough light-emitting surface 144 will increase. The rough light-emitting surface 144 of the LED element 102z can also increase the adhesion of the light conversion layers 193G, 193R and the filter layer 194 attached to the LED element 102z in FIG. 13B . In one embodiment, the size of the rough structure of the rough light-emitting surface 144 is larger than the light-emitting wavelength of the LED element 102z, part of the light from the LED element 102z will pass through the rough light-emitting surface 144, and the other part of the light will be reflected by the rough light-emitting surface 144, Diffusion Light is formed on both sides of the rough light-emitting surface 144 .

綜上所述，雖然本申請已以實施例揭露如上，然其並非用以限定本申請。本申請所屬技術領域中具有通常知識者，在不脫離本申請之精神和範圍內，當可作各種之更動與潤飾。因此，本申請之保護範圍當視後附之申請專利範圍所界定者為準。To sum up, although the present application has disclosed the above with the embodiments, it is not intended to limit the present application. Those with ordinary knowledge in the technical field to which this application belongs may make various changes and modifications without departing from the spirit and scope of this application. Therefore, the scope of protection of this application should be defined by the scope of the appended patent application.

100、120、140:載板 101、121、141:矩陣 104H、124H、144H:行間距 104V、124V、144V:列間距 102、102a、102b、102c、102d、102e、102p、102x、102y、102z:LED元件 102bl:藍光LED晶粒 102B、102BL:藍色LED元件 102ee:位置 102G:綠色LED元件 102R:紅色LED元件 102v:紫外光LED晶粒 130:LED元件單元面積 130C:元件淨面積 130T:分隔區域 144:粗糙出光面 150、150x:成長基板 152n:負電極 152p:正電極 160:載板 162:黏著層 164:曝光區域 166:遮光板 168:雷射光束 169:拾取頭 170:區域 172:區塊 180:載板 190:暫時基板 192:黏著層 193、193G、193R、193B:光轉換層 194:濾光層 202:供體載具 204:雷射模組 206:受體載具 500a、500b、500c、500d:畫素封裝結構 502:封裝層 504:電路基板 508:遮光層 510G、510R、510B:孔洞 530:整個表面面積 532G:表面面積 800、800a:畫素載板 844H、846H:畫素行間距 844V、846V:畫素列間距 A01:雷射轉移裝置 BB、CC:線 M01:製作方法 P:畫素 S02、S04、S06步驟 X01-X05、X21-X25、X41-X45:行 Y01-Y08、Y21-Y28、Y41-Y48:列 100, 120, 140: carrier board 101, 121, 141: Matrix 104H, 124H, 144H: line spacing 104V, 124V, 144V: column spacing 102, 102a, 102b, 102c, 102d, 102e, 102p, 102x, 102y, 102z: LED elements 102bl: Blue LED grain 102B, 102BL: blue LED components 102ee: location 102G: Green LED component 102R: Red LED component 102v: Ultraviolet LED grain 130: LED component unit area 130C: net area of components 130T: separate area 144: Rough light surface 150, 150x: growth substrate 152n: negative electrode 152p: positive electrode 160: carrier board 162: Adhesive layer 164: Exposure area 166: visor 168:Laser Beam 169: pick up head 170: area 172: block 180: carrier board 190: Temporary substrate 192: Adhesive layer 193, 193G, 193R, 193B: light conversion layer 194: filter layer 202: Donor carrier 204:Laser module 206: Receptor Vehicle 500a, 500b, 500c, 500d: pixel packaging structure 502: encapsulation layer 504: circuit substrate 508: shading layer 510G, 510R, 510B: holes 530: entire surface area 532G: surface area 800, 800a: pixel carrier board 844H, 846H: pixel line spacing 844V, 846V: pixel column spacing A01:Laser transfer device BB, CC: line M01: Production method P: pixel S02, S04, S06 steps X01-X05, X21-X25, X41-X45: OK Y01-Y08, Y21-Y28, Y41-Y48: columns

圖1A顯示依據本申請一實施例的製作方法。FIG. 1A shows a fabrication method according to an embodiment of the present application.

圖1B顯示在圖1A的製作方法下依序產生的三種載板。FIG. 1B shows three substrates produced sequentially by the fabrication method in FIG. 1A .

圖1C顯示依據本申請一實施例之由數個畫素載板所構成的螢幕。FIG. 1C shows a screen composed of several pixel substrates according to an embodiment of the present application.

圖1D顯示依據本申請一實施例之由數個畫素載板所構成的另一螢幕。FIG. 1D shows another screen composed of several pixel carriers according to an embodiment of the present application.

圖2A顯示其上形成有LED元件的成長基板。FIG. 2A shows a growth substrate with LED elements formed thereon.

圖2B與2C分別顯示沿著圖2A中線BB與線CC的剖面圖。2B and 2C are cross-sectional views along line BB and line CC in FIG. 2A , respectively.

圖3A顯示圖2A之成長基板上特定曝光區域中數個LED元件被雷射光束照射。FIG. 3A shows that several LED elements in a specific exposure area on the growth substrate of FIG. 2A are irradiated by laser beams.

圖3B顯示圖2B中的數個LED元件自成長基板脫離。FIG. 3B shows several LED elements in FIG. 2B detached from the growth substrate.

圖3C顯示圖2C中，特定曝光區域中的一個LED元件轉移到載板上。FIG. 3C shows the transfer of one LED element in the specific exposure area of FIG. 2C to the carrier.

圖3D顯示圖2B中的數個LED元件自成長基板脫離。FIG. 3D shows several LED elements in FIG. 2B detached from the growth substrate.

圖3E顯示圖2C中，特定曝光區域中的一個LED元件轉移到載板上。Figure 3E shows the transfer of one LED element in the specific exposure area of Figure 2C to the carrier.

圖4顯示依據本申請之實施例的一種雷射轉移設備。FIG. 4 shows a laser transfer device according to an embodiment of the present application.

圖5A-5E顯示，依據本申請一實施例，拾取頭將數個LED元件從成長基板轉移到載板的製程。5A-5E show, according to an embodiment of the present application, a pick-up head transferring several LED components from a growth substrate to a carrier.

圖6A顯示，依據本申請一實施例，將成長基板上的數個LED元件轉移到載板上。FIG. 6A shows that several LED elements on a growth substrate are transferred to a carrier according to an embodiment of the present application.

圖6B顯示，依據本申請一實施例，將成長基板之數個區塊內的數個LED元件逐次轉移到載板上。FIG. 6B shows that according to an embodiment of the present application, several LED elements in several sections of the growth substrate are transferred to the carrier board one by one.

圖7A與7B顯示，依據本申請一實施例，成長基板上的數個LED元件被轉移到暫時基板的過程剖面示意圖。7A and 7B are schematic cross-sectional views showing a process of transferring several LED elements on a growth substrate to a temporary substrate according to an embodiment of the present application.

圖8顯示暫時基板上具有LED元件。Figure 8 shows a temporary substrate with LED elements on it.

圖9A-9C顯示在暫時基板上封裝LED元件的過程。9A-9C illustrate the process of encapsulating LED elements on a temporary substrate.

圖10A與10B顯示二種畫素封裝結構剖面圖。10A and 10B show cross-sectional views of two pixel packaging structures.

圖11顯示依據本申請另一實施例之一種畫素封裝結構之剖面圖。FIG. 11 shows a cross-sectional view of a pixel packaging structure according to another embodiment of the present application.

圖12A到12D顯示圖11之畫素封裝結構的製程剖面示意圖。12A to 12D are schematic cross-sectional views showing the manufacturing process of the pixel packaging structure in FIG. 11 .

圖13A顯示數個LED元件形成於成長基板的剖面圖。Figure 13A shows a cross-sectional view of several LED elements formed on a growth substrate.

圖13B顯示一種畫素封裝結構剖面圖，具有圖13A中的LED元件。FIG. 13B shows a cross-sectional view of a pixel package structure with the LED element in FIG. 13A .

M01:製作方法 M01: Production method

S02、S04、S06:步驟 S02, S04, S06: steps

Claims

一種光電產品之製造方法，包括：提供至少一第一載板，其上設有複數電子元件，排列成一第一矩陣，具有沿著一第一方向之數個第一主排列線（primary lines），以及沿著一第二方向之數個第一次排列線（secondary lines），其中，該第一方向不同於該第二方向，兩相鄰之第一主排列線相距一第一主線距，以及兩相鄰之第一次排列線相距一第一次線距；轉移該等電子元件，從該第一載板至一第二載板，排列成一第二矩陣，具有沿著該第一方向之數個第二主排列線，以及沿著該第二方向之數個第二次排列線，其中，兩相鄰之第二主排列線相距一第二主線距，以及兩相鄰之第二次排列線相距一第二次線距，該二主線距等於該第一主線距，以及該二次線距大於該第一次線距；以及轉移該等電子元件，從該第二載板至一第三載板，排列成一第三矩陣，具有沿著該第一方向之數個第三主排列線，以及沿著該第二方向之數個第三次排列線，其中，兩相鄰之第三主排列線相距一第三主線距，以及兩相鄰之第三次排列線相距一第三次線距，該三主線距大於該第二主線距，以及該三次線距等於該第二次線距。 A method of manufacturing an optoelectronic product, comprising: At least one first carrier is provided, on which a plurality of electronic components are arranged in a first matrix, with several first primary lines along a first direction, and a plurality of primary lines along a second direction Several secondary lines, wherein the first direction is different from the second direction, two adjacent first main alignment lines are separated by a first main line distance, and two adjacent first alignment lines The line distance is the first line distance; transferring the electronic components from the first carrier to a second carrier, arranged in a second matrix, having a plurality of second main alignment lines along the first direction, and a plurality of second main alignment lines along the second direction second arrangement lines, wherein two adjacent second main arrangement lines are separated by a second main line distance, and two adjacent second arrangement lines are separated by a second line distance, and the two main line distances are equal to the second main line distance a main line spacing, and the secondary line spacing is greater than the primary line spacing; and transferring the electronic components from the second carrier to a third carrier, arranged in a third matrix, having a plurality of third main alignment lines along the first direction, and a plurality of third main alignment lines along the second direction third arrangement lines, wherein two adjacent third main arrangement lines are separated by a third main line distance, and two adjacent third arrangement lines are separated by a third line distance, and the three main line distances are greater than the third main line distance The second main line spacing, and the third line spacing is equal to the second secondary line spacing.

如申請專利範圍第1項所述之製造方法，其中，轉移該等電子元件，從該第一載板至該第二載板之步驟，是一第一次排列線接著一第一次排列線，將該等電子元件批次轉移至該第二載板，成為該等第二次排列線。The manufacturing method described in claim 1, wherein the step of transferring the electronic components from the first carrier to the second carrier is a first alignment line followed by a first alignment line , transferring the batches of electronic components to the second carrier to become the second arrangement lines.

如申請專利範圍第2項所述之製造方法，其中，該等第一次排列線之間具有一第一次順序關係，該等第二次排列線之間具有一第二次順序關係，等於該第一次順序關係。The manufacturing method described in item 2 of the scope of the patent application, wherein there is a first order relationship between the first arrangement lines, and a second order relationship between the second arrangement lines, which is equal to The first order relationship.

如申請專利範圍第2項所述之製造方法，其中，轉移該等電子元件，從該第二載板至該第三載板之步驟，是一第二主排列線接著一第二主排列線，將該等電子元件批次轉移至該第三載板，成為該等第三主排列線。The manufacturing method described in item 2 of the scope of the patent application, wherein the step of transferring the electronic components from the second carrier to the third carrier is a second main alignment line followed by a second main alignment line , transferring the batches of the electronic components to the third carrier to become the third main alignment lines.

如申請專利範圍第2項所述之製造方法，另包含有：。從該第三載板，轉移至少數個該等電子元件，至一畫素載板，排列成沿著該第一方向之數個畫素主排列線，以及沿著該第二方向之數個畫素次排列線，其中，兩相鄰之畫素主排列線相距有一畫素主線距，以及兩相鄰之畫素次排列線相距有一畫素次線距，該畫素主線距為該第三主線距之一第一正整數倍，以及該畫素次線距為該第三次線距之一第二正整數倍。 The manufacturing method described in item 2 of the scope of the patent application also includes:. From the third carrier, transfer at least several of the electronic components to a pixel carrier, arrange a plurality of pixel main alignment lines along the first direction, and a plurality of pixel main alignment lines along the second direction Pixel sub-arrangement lines, wherein, two adjacent pixel main-arrangement lines are separated by a pixel main line distance, and two adjacent pixel sub-arrangement lines are separated by a pixel sub-line distance, and the pixel main line distance is the pixel main line distance The first positive integer multiple of one of the three main line spacings, and the second positive integer multiple of the pixel sub-line spacing.

如申請專利範圍第1項所述之製造方法，其中，該等電子元件為數個LED元件。The manufacturing method described in item 1 of the scope of the patent application, wherein the electronic components are several LED components.

如申請專利範圍第6項所述之製造方法，其中，每一該等LED元件具有一光轉換層，包覆一LED晶粒。The manufacturing method described in item 6 of the scope of the patent application, wherein each of the LED elements has a light conversion layer covering an LED die.

一種用來轉移數個電子元件的設備，包括：一雷射模組，可產生一雷射光束，具有一預設光型；一供體載具，用以承載一成長基板，其具有該等電子元件，該供體載具與該雷射模組架構來可以相對移動，使該雷射光束可照射該等電子元件中之數個第一電子元件，且該等第一電子元件排列成一直線；以及一受體載具，用以承載一載板，該供體載具與該受體載具架構來可以相對移動，使該等第一電子元件可以轉移至該載板上之一預設位置。 A device used to transfer several electronic components, including: A laser module capable of generating a laser beam with a preset light pattern; A donor carrier, used to carry a growth substrate, which has the electronic components, the donor carrier and the laser module structure can move relatively, so that the laser beam can irradiate the electronic components a plurality of first electronic components, and the first electronic components are arranged in a straight line; and A receiver carrier is used to carry a carrier board, and the donor carrier and the receiver carrier structure are relatively movable, so that the first electronic components can be transferred to a predetermined position on the carrier board.

如申請專利範圍第8項所述之設備，其中，該等第一電子元件於該成長基板上具有一第一間距，轉移至該載板上後具有不同於該第一間距之一第二間距。The device described in claim 8 of the scope of the patent application, wherein the first electronic components have a first pitch on the growth substrate, and have a second pitch different from the first pitch after being transferred to the carrier .

一種LED裝置之製造方法，包括：提供一成長基板，其上形成有數個LED晶粒；轉移該等LED晶粒，從該成長基板至一暫時基板；於該暫時基板上形成一光轉換層，包覆該等LED晶粒，其中，該光轉換層用以轉換該等LED晶粒所發出的第一光線，成為具有一預設波長的第二光線；圖案化該光轉換層；於該光轉換層上形成一濾光層，包覆該光轉換層與該等LED晶粒，其中，該濾光層用來阻擋該第一光線；以及圖案化該濾光層，以使每一LED元件具有該等LED晶粒其中之一、該光轉換層、以及該濾光層。 A method of manufacturing an LED device, comprising: providing a growth substrate on which several LED crystal grains are formed; transferring the LED dies from the growth substrate to a temporary substrate; A light conversion layer is formed on the temporary substrate to cover the LED chips, wherein the light conversion layer is used to convert the first light emitted by the LED chips into second light with a predetermined wavelength ; patterning the light conversion layer; forming a filter layer on the light conversion layer to cover the light conversion layer and the LED chips, wherein the filter layer is used to block the first light; and The filter layer is patterned so that each LED element has one of the LED dies, the light conversion layer, and the filter layer.