TW202314921A - Substrate drying apparatus, substrate processing apparatus and substrate drying method capable of reducing the occurrence of pattern clogging with a simple configuration - Google Patents

Substrate drying apparatus, substrate processing apparatus and substrate drying method capable of reducing the occurrence of pattern clogging with a simple configuration Download PDF

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TW202314921A
TW202314921A TW111136084A TW111136084A TW202314921A TW 202314921 A TW202314921 A TW 202314921A TW 111136084 A TW111136084 A TW 111136084A TW 111136084 A TW111136084 A TW 111136084A TW 202314921 A TW202314921 A TW 202314921A
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substrate
volatile solvent
liquid
film
water
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TWI808006B (en
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松下淳
埀野陽子
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日商芝浦機械電子裝置股份有限公司
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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67011—Apparatus for manufacture or treatment
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    • H—ELECTRICITY
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices

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Abstract

A piece of substrate drying apparatus, a piece of substrate processing apparatus, and a substrate drying method, capable of reducing the occurrence of pattern clogging with a simple configuration, are provided. A substrate drying device (300) in a substrate processing apparatus (1) includes: a heating section (36); a first volatile solvent supply section (34); a second volatile solvent supply unit (35) supplying a second volatile solvent (H), wherein the second volatile solvent (H) contains a water repellent agent whose surface tension when vaporized is smaller than the first volatile solvent (V); a drying chamber (31) which the substrate (W) is carried into on which the liquid film is formed; a driving mechanism for rotating the substrate (W); and a control device (400). The first volatile solvent (V) supplied from the first volatile solvent supply section (34) is to replace the liquid film, and the second volatile solvent (H) supplid from the second volatile solvent supply unit (35) is to replace the first volatile solvent (V) and therefore form a water repellent film is formed, so as to enable the heating section (36) to heat the substrate (W), and generate an air layer between the liquid film of the second volatile solvent (H) and the substrate (W), therefore, the liquid film of the second volatile solvent (H) is discharged by the centrifugal force brought by the rotation.

Description

基板乾燥裝置、基板處理裝置及基板乾燥方法Substrate drying device, substrate processing device, and substrate drying method

本發明涉及一種基板乾燥裝置、基板處理裝置及基板乾燥方法。The invention relates to a substrate drying device, a substrate processing device and a substrate drying method.

在製造半導體、液晶面板等的製造工序中，會使用如下基板處理裝置：向晶片、液晶基板等基板的被處理面供給處理液而對被處理面進行處理，在處理後，對被處理面進行洗淨、乾燥。In the manufacturing process of manufacturing semiconductors, liquid crystal panels, etc., the following substrate processing equipment is used: the processing liquid is supplied to the processing surface of substrates such as wafers and liquid crystal substrates to process the processing surface, and after processing, the processing surface is treated. Wash and dry.

在所述基板處理裝置的乾燥工序中，存在因圖案彼此的間隔、結構、處理液的表面張力等而導致例如存儲胞元、柵極周邊等的圖案塌毀而閉塞的情況。特別是，隨著近年來伴隨半導體的高集成化、高容量化而來的微細化，深度相對於配線寬度或開口寬度的比率即縱橫尺寸比變高，因此容易發生圖案塌毀。In the drying process of the substrate processing apparatus, patterns such as memory cells and the periphery of gates, for example, may be collapsed and blocked due to the distance between patterns, structure, surface tension of the processing liquid, and the like. In particular, with recent miniaturization accompanied by higher integration and higher capacity of semiconductors, pattern collapse tends to occur because the ratio of depth to wiring width or opening width, that is, the aspect ratio becomes higher.

為了抑制此種圖案塌毀，提出有在利用去離子水（Deionized Water，DIW）（超純水）進行淋洗處理後使用異丙醇（Isopropyl alcohol，IPA）（2-丙醇：異丙醇）的基板乾燥方法。所述基板乾燥方法是藉由將基板表面上的DIW（超純水）置換為表面張力比DIW小的IPA來減少乾燥處理時表面張力所引起的圖案塌毀。In order to suppress this kind of pattern collapse, it is proposed to use isopropyl alcohol (Isopropyl alcohol, IPA) (2-propanol: isopropanol ) substrate drying method. The substrate drying method is to reduce pattern collapse caused by surface tension during drying process by replacing DIW (ultrapure water) on the surface of the substrate with IPA having a surface tension smaller than DIW.

[現有技術文獻] [專利文獻] [專利文獻1]日本專利特開2008-034779號公報 [Prior art literature] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2008-034779

[發明所要解決的問題] 然而，半導體的微細化在日益發展，即便是在進行使用如IPA那樣揮發性高的有機溶媒（揮發性溶劑）的乾燥的情況下，有時也會因液體的表面張力等而導致晶片的微細圖案塌毀。 [Problem to be Solved by the Invention] However, the miniaturization of semiconductors is progressing day by day, and even in the case of drying using highly volatile organic solvents (volatile solvents) such as IPA, wafers may become micronized due to the surface tension of the liquid, etc. Pattern collapsed.

例如，當在液體乾燥的過程中基板表面的乾燥速度發生不均勻、在一部分圖案間留下液體時，這部分液體的表面張力會導致圖案塌毀。詳細而言，留有液體的部分的圖案彼此因液體的表面張力造成的彈性變形而塌毀，些許溶於所述液體中的殘渣發生集聚。繼而，當液體完全氣化時，已塌毀的圖案彼此便會固接而閉塞。For example, when the drying speed of the substrate surface is uneven during the drying process of the liquid, and the liquid is left between a part of the pattern, the surface tension of this part of the liquid will cause the pattern to collapse. In detail, the patterns of the portion where the liquid remains are collapsed due to elastic deformation caused by the surface tension of the liquid, and a little residue dissolved in the liquid is accumulated. Then, when the liquid is completely vaporized, the collapsed patterns will be solidified and blocked.

為了應對所述問題，除了供給IPA以外，還供給作為能夠對基板W的表面進行撥水化的修飾劑的撥水化劑，由此利用浸透至IPA的液膜的撥水化劑，將基板表面的羥基置換為官能基，從而形成撥水化膜。由此，在圖案之間也形成撥水化膜，親液性降低而液體接觸角上升。即，位於基板表面上的液體的表面張力進一步變低，因此可減弱圖案彼此吸引的力，從而可抑制圖案塌毀。In order to cope with this problem, in addition to supplying IPA, a water-repellent agent, which is a modifier capable of water-repelling the surface of the substrate W, is also supplied, thereby utilizing the water-repellent agent that penetrates into the liquid film of the IPA, and the substrate W is sealed. The hydroxyl groups on the surface are replaced with functional groups to form a water-repellent film. Thereby, a water-repellent film is also formed between the patterns, the lyophilicity is lowered, and the liquid contact angle is increased. That is, since the surface tension of the liquid on the surface of the substrate is further lowered, the force of attracting the patterns to each other can be weakened, and the collapse of the patterns can be suppressed.

在使用撥水化劑的情況下，藉由供給撥水化劑形成撥水化膜後，利用IPA等進行淋洗處理而去除多餘的撥水化劑，然後進行乾燥處理。但是，進行乾燥處理後，形成於基板表面的撥水化膜也會殘留。因此，需要進行去除基板表面的撥水化膜的撥水化膜去除處理。撥水化膜的去除例如藉由用於灰化的等離子體處理或紫外線（Ultraviolet，UV）照射處理來進行。When using a water-repellent agent, after forming a water-repellent film by supplying a water-repellent agent, it rinses with IPA etc. to remove excess water-repellent agent, and then performs drying process. However, the water-repellent film formed on the surface of the substrate remains after the drying treatment. Therefore, it is necessary to perform a water-repellent film removal process for removing the water-repellent film on the surface of the substrate. The removal of the water-repellent film is performed, for example, by plasma treatment for ashing or ultraviolet (Ultraviolet, UV) irradiation treatment.

因此，需要對基板處理裝置追加與乾燥裝置獨立的等離子體處理裝置或UV照射裝置等去除裝置，並且需要從乾燥裝置向去除裝置的搬送工序。於是，基板處理裝置變得複雜化、大型化，並且工序數變多，基板處理的生產性降低。進而，若圖案變深、縱橫尺寸比增加，則藉由UV照射有可能無法將撥水化膜去除直至圖案底部。Therefore, it is necessary to add a removal device such as a plasma processing device or a UV irradiation device independent of the drying device to the substrate processing device, and a transfer process from the drying device to the removal device is required. Then, the substrate processing apparatus becomes complicated and large, and the number of steps increases, thereby reducing the productivity of the substrate processing. Furthermore, if the pattern becomes darker and the aspect ratio increases, the water-repellent film may not be removed to the bottom of the pattern by UV irradiation.

本發明的實施方式的目的在於提供一種能夠以簡單的結構減少圖案閉塞的發生的基板乾燥裝置、基板處理裝置及基板乾燥方法。An object of embodiments of the present invention is to provide a substrate drying apparatus, a substrate processing apparatus, and a substrate drying method capable of reducing occurrence of pattern occlusion with a simple structure.

[解決問題的技術手段] 本發明的實施方式的基板乾燥裝置包括：加熱部，對基板進行加熱；第一揮發性溶劑供給部，向所述基板的被處理面上供給第一揮發性溶劑；第二揮發性溶劑供給部，向所述基板的被處理面上供給第二揮發性溶劑，所述第二揮發性溶劑包含用以形成撥水化膜的撥水化劑且氣化時的表面張力比所述第一揮發性溶劑小；乾燥室，收容有所述加熱部、所述第一揮發性溶劑供給部及所述第二揮發性溶劑供給部，且在其中搬入在被處理面上形成有由處理液形成的液膜的狀態下的所述基板；支撐部，接收搬入至所述乾燥室的所述基板；驅動機構，使支撐於所述支撐部的所述基板旋轉；以及控制裝置，藉由從所述第一揮發性溶劑供給部供給所述第一揮發性溶劑，將形成於所述基板的被處理面上的由所述處理液形成的液膜置換為所述第一揮發性溶劑，藉由從所述第二揮發性溶劑供給部供給所述第二揮發性溶劑，將形成於所述基板的被處理面上的所述第一揮發性溶劑置換為所述第二揮發性溶劑，並且在所述基板的被處理面上形成所述撥水化膜，藉由使所述加熱部對所述基板進行加熱，使包含所述撥水化劑的所述第二揮發性溶劑的液膜與所述基板之間產生氣層，從而藉由所述基板的旋轉所帶來的離心力將所述第二揮發性溶劑的液膜排出。 [Technical means to solve the problem] The substrate drying apparatus according to the embodiment of the present invention includes: a heating unit for heating the substrate; a first volatile solvent supply unit for supplying the first volatile solvent to the surface to be processed of the substrate; a second volatile solvent supply unit , supplying a second volatile solvent to the treated surface of the substrate, the second volatile solvent includes a water-repellent agent for forming a water-repellent film and the surface tension when vaporized is higher than that of the first volatile solvent The volatile solvent is small; the drying chamber accommodates the heating unit, the first volatile solvent supply unit, and the second volatile solvent supply unit, and carries in the drying chamber formed by the treatment liquid on the surface to be treated. The substrate in the state of a liquid film; a support unit that receives the substrate carried into the drying chamber; a drive mechanism that rotates the substrate supported by the support unit; The first volatile solvent supply unit supplies the first volatile solvent to replace the liquid film formed by the processing liquid formed on the surface of the substrate to be processed with the first volatile solvent. The second volatile solvent supply unit supplies the second volatile solvent, replaces the first volatile solvent formed on the surface to be processed of the substrate with the second volatile solvent, and The water-repellent film is formed on the surface to be treated of the substrate, and the liquid film of the second volatile solvent containing the water-repellant agent is combined with the water-repellent film by heating the substrate with the heating unit. An air layer is generated between the substrates, so that the liquid film of the second volatile solvent is discharged by the centrifugal force brought by the rotation of the substrates.

本發明的實施方式的基板處理裝置包括：處理裝置，藉由一邊使所述基板旋轉一邊供給第一處理液來進行處理；洗淨裝置，藉由一邊使由所述處理裝置處理完的所述基板旋轉一邊供給第二處理液來進行洗淨；所述基板乾燥裝置；以及搬送裝置，將在所述洗淨裝置中洗淨後的所述基板在形成有由所述洗淨裝置供給的所述第二處理液所形成的液膜的狀態下搬出並搬入至所述基板乾燥裝置。A substrate processing apparatus according to an embodiment of the present invention includes: a processing apparatus that performs processing by supplying a first processing liquid while rotating the substrate; and a cleaning apparatus that performs processing on the substrate that has been processed by the processing apparatus. The substrate is cleaned by being supplied with a second processing liquid while being rotated; the substrate drying device; The liquid film formed by the second processing liquid is carried out and carried into the substrate drying device.

本發明的實施方式的基板乾燥方法中，形成有由處理液形成的液膜且支撐於支撐部的基板在藉由驅動機構被旋轉的同時，藉由從第一揮發性溶劑供給部供給第一揮發性溶劑而將由所述處理液形成的液膜置換為所述第一揮發性溶劑，藉由從第二揮發性溶劑供給部供給包含用以形成撥水化膜的撥水化劑且氣化時的表面張力比所述第一揮發性溶劑小的第二揮發性溶劑，將所述第一揮發性溶劑的液膜置換為所述第二揮發性溶劑，並且在所述基板上形成撥水化膜，藉由利用加熱部對所述基板進行加熱，使包含所述撥水化劑的所述第二揮發性溶劑的液膜與所述基板之間產生氣層，從而藉由所述基板的旋轉所帶來的離心力將所述第二揮發性溶劑的液膜排出。In the substrate drying method according to the embodiment of the present invention, the substrate on which the liquid film of the processing liquid is formed and supported on the support part is rotated by the drive mechanism, and the first volatile solvent is supplied from the first volatile solvent supply part. Volatile solvent to replace the liquid film formed by the treatment liquid with the first volatile solvent, by supplying a water-repellent agent for forming a water-repellent film from the second volatile solvent supply part and vaporizing it When the surface tension of the second volatile solvent is smaller than that of the first volatile solvent, the liquid film of the first volatile solvent is replaced by the second volatile solvent, and a water-repellent solvent is formed on the substrate. The film is formed by heating the substrate with a heating unit to generate an air layer between the liquid film of the second volatile solvent containing the water-repelling agent and the substrate, thereby passing the substrate The centrifugal force brought by the rotation will discharge the liquid film of the second volatile solvent.

[發明的效果] 本發明的實施方式能夠提供一種以簡單的結構減少圖案閉塞的發生的基板乾燥裝置、基板處理裝置及基板乾燥方法。 [Effect of the invention] Embodiments of the present invention can provide a substrate drying apparatus, a substrate processing apparatus, and a substrate drying method that reduce occurrence of pattern occlusion with a simple structure.

以下，參照附圖，對本發明的實施方式進行說明。Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[概要] 如圖1所示，本實施方式的基板處理裝置1包括收容有進行各種處理的裝置的多個腔室1a，是針對在前一工序中收容於晶片匣（前開式標準晶片盒（Front Opening Unified Pod，FOUP））1b中搬送而來的多塊基板W而在各腔室1a內逐塊進行處理的單張處理裝置。未處理的基板W由搬送機器人1c從晶片匣1b中逐塊取出，暫時載置於緩衝單元1d後，藉由以下說明的各種裝置進行向各腔室1a的搬送及處理。 [summary] As shown in FIG. 1 , the substrate processing apparatus 1 of the present embodiment includes a plurality of chambers 1a accommodating devices for performing various processes, and is designed to accommodate wafer cassettes (Front Opening Unified Wafer Cassettes) in the previous process. Pod, FOUP)) 1b, a single processing device that processes multiple substrates W in each chamber 1a one by one. Unprocessed substrates W are taken out one by one from the wafer cassette 1b by the transfer robot 1c, temporarily placed on the buffer unit 1d, and then transferred and processed to each chamber 1a by various devices described below.

基板處理裝置1包括處理裝置110、洗淨裝置120、搬送裝置200、乾燥裝置300、控制裝置400。處理裝置110例如是如下裝置，即藉由向旋轉的基板W供給第一處理液（例如磷酸水溶液、氫氟酸與硝酸的混合液、乙酸、硫酸與過氧化氫水的混合液（硫酸過氧化氫混合物（Sulfuric acid Hydrogen Peroxide Mixture，SPM）等）而將不需要的膜去除從而留下電路圖案的蝕刻裝置。洗淨裝置120利用洗淨液（第二處理液）對由蝕刻裝置進行了蝕刻處理的基板W進行洗淨。搬送裝置200在緩衝單元1d與各腔室1a之間、各腔室1a之間搬送基板W。例如，搬送裝置200將在處理裝置110中處理完的基板W搬送至洗淨裝置120，並將在洗淨裝置120中洗淨後的基板W搬送至乾燥裝置300。乾燥裝置（基板乾燥裝置）300藉由一邊使利用洗淨液洗淨後的基板W旋轉一邊進行加熱，由此進行乾燥處理。控制裝置400對所述各裝置進行控制。The substrate processing apparatus 1 includes a processing apparatus 110 , a cleaning apparatus 120 , a transfer apparatus 200 , a drying apparatus 300 , and a control apparatus 400 . The processing device 110 is, for example, a device that supplies a first processing liquid (such as an aqueous phosphoric acid solution, a mixed solution of hydrofluoric acid and nitric acid, a mixed solution of acetic acid, sulfuric acid and hydrogen peroxide (sulfuric acid peroxide) Hydrogen mixture (Sulfuric acid Hydrogen Peroxide Mixture, SPM, etc.) to remove unnecessary films to leave an etching device for circuit patterns. The cleaning device 120 etches The processed substrate W is cleaned. The transfer device 200 transfers the substrate W between the buffer unit 1d and each chamber 1a, and between each chamber 1a. For example, the transfer device 200 transfers the substrate W processed in the processing device 110 to the cleaning device 120, and the substrate W cleaned in the cleaning device 120 is transported to the drying device 300. The drying device (substrate drying device) 300 rotates the substrate W cleaned with the cleaning solution. Heating is performed to perform drying treatment. The control device 400 controls the respective devices.

此外，藉由本實施方式加以處理的基板W例如為半導體晶片。以下，將基板W的形成有圖案等的面作為被處理面。作為用於洗淨處理的處理液即洗淨液，使用堿洗淨液（氨過氧化氫混合物（Ammonia peroxide mixture，APM））、超純水（DIW）、第一揮發性溶劑（IPA）。APM是氨水與過氧化氫水混合後的藥液，用於去除殘留有機物。DIW用於對APM處理後殘留於基板W的被處理面上的APM進行沖洗。IPA的表面張力比DIW小，揮發性高，因此用於置換DIW而減少表面張力所引起的圖案塌毀。In addition, the substrate W processed by this embodiment is, for example, a semiconductor wafer. Hereinafter, the surface of the substrate W on which a pattern or the like is formed is referred to as a surface to be processed. As the cleaning liquid that is the processing liquid used in the cleaning treatment, an alkali cleaning liquid (ammonia peroxide mixture (APM)), ultrapure water (DIW), and a first volatile solvent (IPA) are used. APM is a liquid medicine mixed with ammonia water and hydrogen peroxide water, which is used to remove residual organic matter. The DIW is used to rinse the APM remaining on the treated surface of the substrate W after the APM treatment. The surface tension of IPA is smaller than that of DIW, and its volatility is high, so it is used to replace DIW to reduce the pattern collapse caused by surface tension.

另外，在本實施方式中，使用第二揮發性溶劑。第二揮發性溶劑是氣化時的表面張力比第一揮發性溶劑小的溶劑。另外，第二揮發性溶劑氣化的溫度比第一揮發性溶劑高。作為此種第二揮發性溶劑，可使用丙二醇單甲醚乙酸酯（propylene glycol monomethyl ether acetate，PGMEA）。另外，第二揮發性溶劑使用包含撥水化劑的溶劑。撥水化劑是能夠將基板W的被處理面的羥基（-OH）置換為官能基（例如-CH 3、C 2H 5）而形成撥水化膜（Si-O-R（R：官能基））的修飾劑。例如，作為撥水化劑，可使用作為矽烷偶合劑的六甲基二矽氮烷（hexamethyldisilazane，HMDS）。以下說明中第二揮發性溶劑的供給以供給包含撥水化劑的第二揮發性溶劑的形態進行。 In addition, in this embodiment, a second volatile solvent is used. The second volatile solvent has a lower surface tension than the first volatile solvent when vaporized. In addition, the vaporization temperature of the second volatile solvent is higher than that of the first volatile solvent. As such a second volatile solvent, propylene glycol monomethyl ether acetate (PGMEA) may be used. In addition, as the second volatile solvent, a solvent containing a water-repelling agent is used. The water-repellent agent is capable of replacing the hydroxyl group (-OH) on the treated surface of the substrate W with a functional group (such as -CH 3 , C 2 H 5 ) to form a water-repellent film (Si-OR (R: functional group) ) modifier. For example, as a water-repellent agent, hexamethyldisilazane (HMDS) which is a silane coupling agent can be used. In the following description, the supply of the second volatile solvent is performed in the form of supplying the second volatile solvent containing a water-repellent agent.

PGMEA使用包含HMDS的物質的理由在於，HMDS容易與水分發生反應。即，HMDS若與空氣中的水分發生反應，則會喪失基板W上的撥水效果。因此，藉由將HMDS混合於PGMEA中，可防止與空氣中的水分發生反應，從而供給至基板W。此外，PGMEA氣化時的表面張力小於IPA氣化時的表面張力。例如，IPA的沸點溫度為82.5℃時（氣化時）的表面張力的值為15.7 mN/m。另一方面，PGMEA的沸點為145.8℃時（氣化時）的表面張力的值為11.72 mN/m～15.47 mN/m。The reason why PGMEA uses a substance containing HMDS is that HMDS easily reacts with moisture. That is, if HMDS reacts with moisture in the air, the water-repellent effect on the substrate W will be lost. Therefore, by mixing HMDS with PGMEA, it can prevent reaction with the moisture in air, and can supply to the board|substrate W. In addition, the surface tension of PGMEA vaporized is smaller than that of IPA vaporized. For example, when the boiling point temperature of IPA is 82.5° C. (at the time of gasification), the surface tension value is 15.7 mN/m. On the other hand, when the boiling point of PGMEA is 145.8° C. (at the time of gasification), the value of the surface tension is 11.72 mN/m to 15.47 mN/m.

[洗淨裝置] 如圖2所示，洗淨裝置120包括洗淨室11、支撐部12、旋轉機構13、擋罩14、供給部15，所述洗淨室11是在內部進行洗淨處理的容器，所述支撐部12支撐基板W，所述旋轉機構13使支撐部12旋轉，所述擋罩14從基板W周圍接擋飛散的洗淨液L，所述供給部15供給洗淨液L。供給部15設置有滴加洗淨液L的噴嘴15a、使噴嘴15a移動的移動機構15b。 [cleaning device] As shown in FIG. 2 , the cleaning device 120 includes a cleaning chamber 11, a support portion 12, a rotating mechanism 13, a cover 14, and a supply portion 15. The cleaning chamber 11 is a container for cleaning inside. The support unit 12 supports the substrate W, the rotation mechanism 13 rotates the support unit 12 , the cover 14 receives the cleaning liquid L scattered around the substrate W, and the supply unit 15 supplies the cleaning liquid L. The supply part 15 is provided with the nozzle 15a which drops the cleaning liquid L, and the moving mechanism 15b which moves the nozzle 15a.

從噴嘴15a向支撐於支撐部12上、藉由旋轉機構13進行旋轉的基板W的被處理面供給洗淨液L，由此來進行洗淨處理。洗淨處理中，對由處理裝置110進行了蝕刻處理的基板W的被處理面供給APM從而進行APM洗淨，在APM洗淨後利用DIW進行純水淋洗處理，由此利用純水對殘留於基板W的被處理面的APM進行沖洗。由此，基板W的被處理面被DIW的洗淨液L充滿。洗淨室11上設置有搬出搬入基板W的開口11a，開口11a構成為能夠藉由門11b進行開閉。Cleaning treatment is performed by supplying cleaning liquid L from the nozzle 15 a to the surface to be processed of the substrate W that is supported on the support portion 12 and rotated by the rotation mechanism 13 . In the cleaning process, APM is supplied to the surface to be processed of the substrate W etched by the processing apparatus 110 to perform APM cleaning, and after the APM cleaning, a pure water rinse is performed with DIW, whereby the remaining The APM on the surface to be processed of the substrate W is rinsed. Thereby, the surface to be processed of the substrate W is filled with the cleaning solution L of the DIW. The cleaning chamber 11 is provided with an opening 11a through which the substrate W is carried in and out, and the opening 11a is configured to be openable and closable by a door 11b.

[搬送裝置] 搬送裝置200包括搬運裝置20。搬運裝置20包括對基板W進行抓持的機械手21以及移動機構22。機械手21抓持基板W。移動機構22使機械手21移動。搬送裝置200在緩衝單元1d與各種裝置之間、各種裝置之間搬送基板W。例如，將蝕刻處理結束後的基板W從處理裝置110搬出，並在基板W的被處理面上形成有洗淨液（DIW）L的液膜的狀態下將其搬入洗淨裝置120。另外，移動機構22藉由使機械手21移動，將洗淨結束後的基板W從洗淨裝置120搬出，在基板W的被處理面上形成有洗淨液（DIW）L的液膜的狀態下，將其搬入乾燥裝置300。此外，在基板W的被處理面上形成有洗淨液（DIW）L的液膜的狀態下進行搬送的原因在於，在基板W的搬送過程中防止顆粒附著於基板W的被處理面上。 [Conveyor] The transport device 200 includes the transport device 20 . The transfer device 20 includes a robot arm 21 for gripping the substrate W and a moving mechanism 22 . The robot arm 21 grips the substrate W. The moving mechanism 22 moves the manipulator 21 . The transfer device 200 transfers the substrate W between the buffer unit 1d and various devices, and between various devices. For example, the substrate W after the etching process is carried out from the processing apparatus 110 , and carried into the cleaning apparatus 120 with a liquid film of cleaning liquid (DIW) L formed on the surface of the substrate W to be processed. In addition, the moving mechanism 22 moves the robot arm 21 to carry out the cleaned substrate W from the cleaning device 120 , and the liquid film of the cleaning solution (DIW) L is formed on the surface of the substrate W to be processed. Next, it is carried into the drying device 300. In addition, the reason why the substrate W is conveyed with a liquid film of cleaning solution (DIW) L formed on the surface to be processed is to prevent particles from adhering to the surface to be processed of the substrate W during the substrate W being conveyed.

[乾燥裝置] 如圖2所示，乾燥裝置300包括乾燥室31、支撐部32、驅動機構33、第一揮發性溶劑供給部34、第二揮發性溶劑供給部35、加熱部36、擋罩37、測定部38。乾燥室31是用於在內部對基板W進行乾燥處理的腔室1a。乾燥室31例如為長方體或立方體等箱形形狀。為提高防塵性，利用二氧化矽對乾燥室31的內壁進行了塗覆。乾燥室31上設置有用於將基板W搬出或搬入的開口31a。開口31a設置成能夠藉由門31b進行開閉。在此種乾燥室31中，收容有後述的第一揮發性溶劑供給部34、第二揮發性溶劑供給部35、加熱部36。 [drying device] As shown in Figure 2, the drying device 300 includes a drying chamber 31, a support part 32, a drive mechanism 33, a first volatile solvent supply part 34, a second volatile solvent supply part 35, a heating part 36, a shield 37, a measuring part 38. The drying chamber 31 is a chamber 1 a for drying the substrate W inside. The drying chamber 31 is, for example, a box shape such as a rectangular parallelepiped or a cube. The inner wall of the drying chamber 31 is coated with silica to improve dust resistance. The drying chamber 31 is provided with an opening 31a through which the substrate W is carried out or carried in. The opening 31a is provided so that it can be opened and closed by the door 31b. Such a drying chamber 31 houses a first volatile solvent supply unit 34 , a second volatile solvent supply unit 35 , and a heating unit 36 , which will be described later.

另外，在乾燥室31設置有導入口31c、排氣口31d。在導入口31c連接有包括配管、進氣閥及供給清潔氣體（N 2等）的供氣裝置的供氣部31e。在排氣口31d連接有包括配管、排氣閥及對氣體進行排氣的排氣裝置的排氣部31f。藉由從導入口31c向乾燥室31內供給清潔氣體，可使乾燥室31內成為正常的氣氛。另外，藉由形成從導入口31c向乾燥室31內供給氣體、且從排氣口31d排出乾燥室31內的氣體的結構，從而形成乾燥室31內的氣體的流動。由此，成為如下結構：當對基板W進行加熱時產生的處理液的蒸氣不會充滿乾燥室31內而可從乾燥室31排出。 In addition, an introduction port 31c and an exhaust port 31d are provided in the drying chamber 31 . A gas supply unit 31e including a pipe, an intake valve, and a gas supply device for supplying clean gas (N 2 or the like) is connected to the introduction port 31c. An exhaust unit 31f including a pipe, an exhaust valve, and an exhaust device for exhausting gas is connected to the exhaust port 31d. By supplying clean gas into the drying chamber 31 from the introduction port 31c, the inside of the drying chamber 31 can be made into a normal atmosphere. Moreover, the flow of the gas in the drying chamber 31 is formed by forming a structure in which the gas is supplied into the drying chamber 31 from the inlet port 31c and the gas in the drying chamber 31 is exhausted from the exhaust port 31d. Thereby, the vapor of the processing liquid generated when the substrate W is heated can be discharged from the drying chamber 31 without filling the drying chamber 31 .

支撐部32對基板W進行支撐。支撐部32包括旋轉台32a、多個保持構件32b、旋轉軸32c。旋轉台32a為直徑比基板W大的圓筒形狀，上表面呈平坦的圓盤。多個保持構件32b等間隔地配置在沿著基板W外周的位置上，以與旋轉台32a的上表面之間空出間隔的方式將基板W保持在水平狀態。多個保持構件32b設置成能夠藉由未圖示的開閉機構在接觸基板W的緣部的閉位置與離開基板W的緣部的開位置之間移動。旋轉軸32c是從下方支撐旋轉台32a而成為旋轉的中心的鉛垂方向的軸。The support portion 32 supports the substrate W. As shown in FIG. The support unit 32 includes a rotary table 32a, a plurality of holding members 32b, and a rotary shaft 32c. The turntable 32a has a cylindrical shape with a diameter larger than that of the substrate W, and its upper surface is a flat disc. The plurality of holding members 32b are arranged at equal intervals along the outer periphery of the substrate W, and hold the substrate W in a horizontal state with a gap from the upper surface of the turntable 32a. The plurality of holding members 32b are provided so as to be movable between a closed position contacting the edge of the substrate W and an open position separated from the edge of the substrate W by an opening and closing mechanism not shown. The rotating shaft 32c is an axis in the vertical direction that supports the rotating table 32a from below and serves as a center of rotation.

驅動機構33是使支撐於支撐部32的基板W旋轉的機構。驅動機構33包括馬達等驅動源，經由旋轉軸32c使支撐部32旋轉。The drive mechanism 33 is a mechanism that rotates the substrate W supported by the support portion 32 . The driving mechanism 33 includes a driving source such as a motor, and rotates the support portion 32 via the rotating shaft 32c.

第一揮發性溶劑供給部34對搬入至乾燥室31而支撐於支撐部32的基板W上供給第一揮發性溶劑V。第一揮發性溶劑供給部34包括噴嘴34a、擺動臂34b、擺動機構34c。噴嘴34a朝向基板W的被處理面的中心附近供給第一揮發性溶劑V。從乾燥室31外的貯存部經由配管（均未圖示）等對噴嘴34a供給作為第一揮發性溶劑V的IPA。The first volatile solvent supply unit 34 supplies the first volatile solvent V to the substrate W carried into the drying chamber 31 and supported by the support unit 32 . The first volatile solvent supply unit 34 includes a nozzle 34a, a swing arm 34b, and a swing mechanism 34c. The nozzle 34a supplies the first volatile solvent V toward the vicinity of the center of the surface of the substrate W to be processed. IPA as the first volatile solvent V is supplied to the nozzle 34 a from a storage portion outside the drying chamber 31 via piping (both not shown in the figure) and the like.

在洗淨裝置120的洗淨處理中，藉由利用APM進行的堿洗淨後的利用DIW進行的純水淋洗處理，最終基板W的被處理面上被DIW的洗淨液L充滿。藉由在此種充滿的狀態下對從洗淨裝置120搬入至乾燥裝置300的基板W供給IPA，從而將DIW置換為IPA。In the cleaning process of the cleaning device 120 , the surface of the substrate W to be processed is finally filled with the cleaning solution L of the DIW by the pure water rinsing process by the DIW after the alkaline cleaning by the APM. By supplying IPA to the substrate W carried in from the cleaning apparatus 120 to the drying apparatus 300 in such a full state, DIW is replaced with IPA.

擺動臂34b在前端設置有噴嘴34a，使噴嘴34a移動至與支撐部32上的基板W的被處理面的中心附近相向的供給位置以及從所述供給位置退避而使得基板W能夠搬入或搬出的退避位置。擺動機構34c是使擺動臂34b擺動的機構。The swing arm 34b is provided with a nozzle 34a at the front end, and moves the nozzle 34a to a supply position facing the vicinity of the center of the surface to be processed of the substrate W on the support portion 32 and retracts from the supply position so that the substrate W can be carried in or out. Retreat position. The swing mechanism 34c is a mechanism for swinging the swing arm 34b.

第二揮發性溶劑供給部35向對基板W上的DIW進行了置換的IPA供給作為第二揮發性溶劑H的PGMEA（包含HMDS的溶劑）（參照圖4的（A））。第二揮發性溶劑供給部35包括噴嘴35a、擺動臂35b、擺動機構35c。噴嘴35a朝向基板W的被處理面的中心附近供給第二揮發性溶劑H。從乾燥室31外的貯存部經由配管（均未圖示）等對噴嘴35a供給PGMEA。The second volatile solvent supply unit 35 supplies PGMEA (a solvent containing HMDS) as a second volatile solvent H to the IPA that has substituted DIW on the substrate W (see FIG. 4(A) ). The second volatile solvent supply unit 35 includes a nozzle 35a, a swing arm 35b, and a swing mechanism 35c. The nozzle 35a supplies the second volatile solvent H toward the vicinity of the center of the surface of the substrate W to be processed. PGMEA is supplied to the nozzle 35 a from a storage part outside the drying chamber 31 through piping (both not shown in the figure) and the like.

藉由供給包含撥水化劑的第二揮發性溶劑H，在基板W的被處理面形成撥水化膜，因此，將基板W的被處理面從親水性的矽烷醇基改變為撥水性的甲基，降低基板W的被處理面上的界面能，由此使第一揮發性溶劑V浮起，從而可促進基板W的被處理面上的液體的去除。此外，此處所說的撥水性是指排斥液體的性質、即撥液性，並不限定於排斥水的性質。By supplying the second volatile solvent H containing a water-repellent agent, a water-repellent film is formed on the treated surface of the substrate W, thereby changing the treated surface of the substrate W from a hydrophilic silanol group to a water-repellent one. The methyl group lowers the interfacial energy on the surface of the substrate W to be processed, thereby floating the first volatile solvent V, thereby promoting the removal of the liquid on the surface of the substrate W to be processed. In addition, the water repellency mentioned here means the property of repelling liquid, that is, liquid repellency, and is not limited to the property of repelling water.

擺動臂35b在前端設置有噴嘴35a，使噴嘴35a移動至與支撐部32上的基板W的被處理面的中心附近相向的供給位置以及從所述供給位置退避而使得基板W能夠搬入或搬出的退避位置。擺動機構35c是使擺動臂35b擺動的機構。The swing arm 35b is provided with a nozzle 35a at the front end, and moves the nozzle 35a to a supply position facing the vicinity of the center of the surface to be processed of the substrate W on the support part 32 and retreats from the supply position so that the substrate W can be carried in or out. Retreat position. The swing mechanism 35c is a mechanism for swinging the swing arm 35b.

加熱部36是對基板W進行加熱的裝置。加熱部36設置於乾燥室31內的上部。加熱部36包括鹵素燈、紅外線燈等燈36a。此外，燈36a為能夠照射紫外光、可見光、紅外光的燈。本實施方式的燈36a為直管形，相互以水平狀態平行配置的多根燈36a以重疊成兩層的方式加以配置，第一層燈36a與第二層燈36a的方向正交，因此整體上呈格子狀。由此，以加熱均勻的方式構成。The heating unit 36 is a device for heating the substrate W. As shown in FIG. The heating unit 36 is provided in the upper part of the drying chamber 31 . The heating unit 36 includes a lamp 36 a such as a halogen lamp or an infrared lamp. In addition, the lamp 36a is a lamp capable of irradiating ultraviolet light, visible light, and infrared light. The lamp 36a of this embodiment is a straight tube shape, and a plurality of lamps 36a arranged parallel to each other in a horizontal state are arranged in two layers. The top is latticed. Thereby, it is comprised so that heating may be uniform.

此外，加熱部36使用與基板W的被處理面上的液體自身、即第一揮發性溶劑V及第二揮發性溶劑H相比基板W自身更容易被加熱的波長的電磁波（紅外線），由此，可促進源於基板W的熱的氣層的產生。作為加熱溫度，例如優選為設為300℃以上。In addition, the heating unit 36 uses electromagnetic waves (infrared rays) of a wavelength that are easier to heat the substrate W itself than the liquid itself on the surface of the substrate W to be processed, that is, the first volatile solvent V and the second volatile solvent H. Thus, the generation of the gas layer due to the heat of the substrate W can be promoted. As heating temperature, it is preferable to set it as 300 degreeC or more, for example.

此外，在乾燥室31設置有窗部36b。窗部36b是使來自加熱部36的電磁波透過的構件。作為窗部36b，例如可使用石英等的板狀體。窗部36b設置於乾燥室31內的加熱部36的正下方，將加熱部36與支撐部32之間隔開，由此，防止因燈36a反復點亮而發生的燈36a的連接器部的構件的伸縮所產生的微粒從上部附著至基板W而發生金屬污染。Moreover, the window part 36b is provided in the drying chamber 31. As shown in FIG. The window portion 36 b is a member that transmits electromagnetic waves from the heating portion 36 . As the window portion 36b, for example, a plate-shaped body such as quartz can be used. The window part 36b is provided directly below the heating part 36 in the drying chamber 31, and separates the heating part 36 from the support part 32, thereby preventing the member of the connector part of the lamp 36a from being repeatedly turned on by the lamp 36a. Particles generated by the expansion and contraction of the substrate W adhere to the substrate W from above to cause metal contamination.

擋罩37以從周圍環繞支撐部32的方式形成為圓筒形狀（參照圖2）。擋罩37的周壁的上部朝向徑向的內側傾斜，以支撐部32上的基板W露出的方式敞開。擋罩37接擋從旋轉的基板W飛散出來的洗淨液L而流至下方。在擋罩37的底面形成有將流下的洗淨液L排出用的排出口（未圖示）。此外，擋罩37連接於驅動機構33，設置成能夠與支撐部32一起升降。The shield 37 is formed in a cylindrical shape so as to surround the support portion 32 from around (see FIG. 2 ). The upper portion of the peripheral wall of the shield 37 is inclined radially inward, and is opened so that the substrate W on the support portion 32 is exposed. The hood 37 catches the cleaning liquid L scattered from the rotating substrate W and flows downward. A discharge port (not shown) for discharging the washing liquid L flowing down is formed on the bottom surface of the hood 37 . In addition, the shutter 37 is connected to the drive mechanism 33 and is provided so as to be able to move up and down together with the support part 32 .

測定部38對搬入至乾燥室31而支撐於支撐部32的基板W上的液體的膜厚進行測定。測定部38包括檢測部38a、擺動臂38b、擺動機構38c。作為檢測部38a，例如使用激光位移計或攝像機等。擺動臂38b在前端設置有檢測部38a，使檢測部38a移動至測定位置以及待機位置，所述測定位置是使檢測部38a與支撐部32上的基板W的被處理面的中心和外周緣之間的中央附近相向的位置，所述待機位置是從所述測定位置退避而使得基板W能夠搬入或搬出的位置。擺動機構38c是使擺動臂38b擺動的機構。The measurement unit 38 measures the film thickness of the liquid carried into the drying chamber 31 and supported on the substrate W by the support unit 32 . The measurement unit 38 includes a detection unit 38a, a swing arm 38b, and a swing mechanism 38c. As the detection unit 38a, for example, a laser displacement meter, a camera, or the like is used. The swing arm 38b is provided with a detection part 38a at the front end, and the detection part 38a is moved to a measurement position and a standby position. The standby position is a position that retreats from the measurement position so that the substrate W can be carried in or out. The swing mechanism 38c is a mechanism for swinging the swing arm 38b.

作為測定部38採用的膜厚測定法，例如可使用光干涉原理。此外，作為其他的例子，能夠在支撐部32內使用重量計。在使用所述重量計的情況下，以理論或實驗方式將基板W上的液膜的重量（液膜的重量＝包含液膜的基板的重量－基板的重量）換算為液膜的厚度。As the film thickness measurement method employed by the measurement unit 38 , for example, the principle of light interference can be used. In addition, as another example, a weighing scale can be used in the support part 32 . When using the weight meter, the weight of the liquid film on the substrate W (weight of the liquid film=weight of the substrate including the liquid film−weight of the substrate) is theoretically or experimentally converted into the thickness of the liquid film.

[控制裝置] 控制裝置400是對基板處理裝置1的各部進行控制的計算機。控制裝置400包括處理器、存儲器、驅動電路，所述處理器執行程序，所述存儲器存儲程序或動作條件等各種信息，所述驅動電路驅動各構件。此外，控制裝置400包括輸入裝置、顯示裝置，所述輸入裝置輸入信息，所述顯示裝置顯示信息。 [control device] The control device 400 is a computer that controls each unit of the substrate processing apparatus 1 . The control device 400 includes a processor, a memory for executing programs, a memory for storing various information such as programs and operating conditions, and a drive circuit for driving various components. Furthermore, the control device 400 includes an input device for inputting information and a display device for displaying information.

控制裝置400對處理裝置110、洗淨裝置120、搬送裝置200、乾燥裝置300進行控制。例如，控制裝置400使支撐於支撐部32的基板W旋轉的同時，藉由從第一揮發性溶劑供給部34供給第一揮發性溶劑V而將液膜置換為第一揮發性溶劑V，並藉由從第二揮發性溶劑供給部35供給第二揮發性溶劑H而將供給至基板W的被處理面上的第一揮發性溶劑V置換為第二揮發性溶劑H後，藉由加熱部36對基板W的加熱，使作為第二揮發性溶劑H的PGMEA氣化後，使撥水化膜從基板W的被處理面脫離。由此，藉由基板W旋轉所帶來的離心力使第二揮發性溶劑H的液膜排出。例如，PGMEA的沸點為140℃～150℃，作為撥水化劑的HMDS的沸點約為300℃，因此，在加熱所引起的瞬時溫度上升的過程中，PGMEA先氣化後，撥水化膜的化學鍵被熱切斷而去除。此外，控制裝置400在判定為測定部38進行測定而得的作為測定結果的膜厚為規定的閾值的範圍內的情況下，開始利用加熱部36進行加熱。The control device 400 controls the processing device 110 , the cleaning device 120 , the conveying device 200 , and the drying device 300 . For example, the control device 400 replaces the liquid film with the first volatile solvent V by supplying the first volatile solvent V from the first volatile solvent supply part 34 while rotating the substrate W supported by the support part 32, and After the first volatile solvent V supplied to the surface to be processed of the substrate W is replaced by the second volatile solvent H by supplying the second volatile solvent H from the second volatile solvent supply part 35, the heating part 36 The substrate W is heated to vaporize PGMEA as the second volatile solvent H, and then the water-repellent film is detached from the surface of the substrate W to be processed. Thus, the liquid film of the second volatile solvent H is discharged by the centrifugal force caused by the rotation of the substrate W. For example, the boiling point of PGMEA is 140°C to 150°C, and the boiling point of HMDS as a water-repelling agent is about 300°C. Therefore, in the process of instantaneous temperature rise caused by heating, PGMEA first gasifies and then water-repellent film The chemical bonds are removed by thermal severing. Furthermore, the control device 400 starts heating by the heating unit 36 when it is determined that the film thickness as a measurement result obtained by the measurement unit 38 is within a predetermined threshold range.

此種控制裝置400包括機構控制部41、膜厚解析部42以及加熱控制部43。機構控制部41對各部的機構進行控制。例如，機構控制部41藉由控制驅動機構33來控制支撐部32的旋轉速度、旋轉開始及旋轉停止的時刻。另外，對噴嘴34a的擺動及第一揮發性溶劑V的噴出、噴嘴35a的擺動及第二揮發性溶劑H的噴出、檢測部38a的擺動及測定等的動作進行控制。Such a control device 400 includes a mechanism control unit 41 , a film thickness analysis unit 42 , and a heating control unit 43 . The mechanism control part 41 controls the mechanism of each part. For example, the mechanism control part 41 controls the rotation speed of the support part 32, and the timing of rotation start and rotation stop by controlling the drive mechanism 33. In addition, operations such as swinging of the nozzle 34a, discharge of the first volatile solvent V, swinging of the nozzle 35a, discharge of the second volatile solvent H, swinging and measurement of the detection unit 38a are controlled.

膜厚解析部42對測定部38進行測定而得的測定結果、即由測定部38測定出的第一揮發性溶劑V及第二揮發性溶劑H的液膜的厚度進行解析。膜厚解析部42對由測定部38測定出的液膜的厚度（液膜厚度值）是否處於規定閾值的範圍內進行判定。然後，膜厚解析部42在判定為測定出的液膜的厚度處於規定閾值的範圍內的情況下認為液膜的厚度恰當，加熱控制部43向加熱部36發送命令加熱的信號。The film thickness analysis unit 42 analyzes the measurement results obtained by the measurement unit 38 , that is, the thicknesses of the liquid films of the first volatile solvent V and the second volatile solvent H measured by the measurement unit 38 . The film thickness analyzing unit 42 determines whether or not the thickness of the liquid film (liquid film thickness value) measured by the measuring unit 38 is within a range of a predetermined threshold value. Then, when the film thickness analysis unit 42 determines that the measured thickness of the liquid film is within the range of the predetermined threshold value, the thickness of the liquid film is deemed appropriate, and the heating control unit 43 sends a signal commanding heating to the heating unit 36 .

此外，供給包含HMDS（撥水化劑）的PGMEA（第二揮發性溶劑）時的適當膜厚例如為100 μm以下。所述膜厚是使加熱部36的加熱所引起的從基板W的蒸發延遲，進行基於萊頓弗羅斯特現象的乾燥處理的基礎上，可良好地乾燥的液膜厚度。但是，這些數值為示例，實際上，可預先藉由實驗等來求出恰當的液膜厚度。另外，基板W的旋轉速度例如為200 rpm～300 rpm左右，即使進行液膜調整，在此種旋轉速度的範圍內，液膜厚度也可維持在規定的厚度。In addition, an appropriate film thickness when supplying PGMEA (second volatile solvent) containing HMDS (hydrating agent) is, for example, 100 μm or less. The above-mentioned film thickness is a liquid film thickness that can be dried well after delaying evaporation from the substrate W by heating by the heating unit 36 and performing a drying process based on the Leidenfrost phenomenon. However, these numerical values are examples, and in practice, an appropriate liquid film thickness can be obtained in advance by experiments or the like. In addition, the rotation speed of the substrate W is, for example, about 200 rpm to 300 rpm. Even if the liquid film adjustment is performed, the liquid film thickness can be maintained at a predetermined thickness within this rotation speed range.

[動作] 除了參照所述的圖1及圖2以外，還參照圖3的（A）及圖3的（B）～圖5的說明圖、圖6的流程圖、圖7的（A）～圖7的（E）及圖8的說明圖對如上所述的本實施方式的基板處理裝置1的動作進行說明。此外，藉由按照以下那樣的順序對基板W進行處理來製造基板的基板製造方法、使基板W乾燥的基板乾燥方法也是本實施方式的一形態。 [action] In addition to referring to the above-mentioned Fig. 1 and Fig. 2, also refer to Fig. 3(A) and Fig. 3(B) to Fig. (E) and the explanatory diagram of FIG. 8 demonstrate the operation|movement of the substrate processing apparatus 1 of this embodiment mentioned above. In addition, a substrate manufacturing method for manufacturing a substrate by processing the substrate W in the following procedure, and a substrate drying method for drying the substrate W are also one aspect of the present embodiment.

首先，如圖2所示，處理裝置110中的蝕刻處理後的基板W藉由搬送裝置200搬入至洗淨裝置120內。在洗淨裝置120中，在保持有基板W的支撐部12旋轉的同時，供給部15向基板W的被處理面的旋轉中心供給APM而利用堿進行淋洗處理，然後藉由供給DIW而進行純水淋洗處理。搬送裝置200將在洗淨後，由作為DIW的洗淨液L充滿的基板W從洗淨裝置120搬出，並搬入至乾燥裝置300。First, as shown in FIG. 2 , the substrate W after etching in the processing device 110 is carried into the cleaning device 120 by the transfer device 200 . In the cleaning device 120, while the support part 12 holding the substrate W is rotated, the supply part 15 supplies APM to the rotation center of the surface to be processed of the substrate W to perform a rinse process with alkaloid, and then perform a rinse process by supplying DIW. Rinse with pure water. The transfer device 200 carries out the substrate W filled with the cleaning liquid L serving as DIW from the cleaning device 120 after cleaning, and carries it into the drying device 300 .

如圖3的（A）所示，在被處理面上形成有洗淨液L的液膜（DIW）的狀態下，支撐部32的保持構件32b對從乾燥裝置300的乾燥室31的開口31a搬入的基板W進行保持（步驟S01）。如圖3的（B）所示，在驅動機構33使基板W與支撐部32一起旋轉的同時（步驟S02），第一揮發性溶劑供給部34向基板W的被處理面的旋轉中心供給作為第一揮發性溶劑V的IPA（步驟S03）。由此，藉由基板W的旋轉所帶來的離心力，IPA遍佈基板W的被處理面的整個區域，而進行將充滿於基板W的被處理面上的DIW置換為IPA的堿淋洗處理。此外，此處，由於置換為表面張力比DIW低的IPA，因此作用於基板W的被處理面上所形成的圖案之間的表面張力減小。As shown in (A) of FIG. 3 , in a state where a liquid film (DIW) of cleaning liquid L is formed on the surface to be treated, the holding member 32 b of the support part 32 faces the opening 31 a of the drying chamber 31 of the drying device 300 . The loaded substrate W is held (step S01 ). As shown in (B) of FIG. 3 , while the drive mechanism 33 rotates the substrate W together with the support part 32 (step S02 ), the first volatile solvent supply part 34 supplies IPA of the first volatile solvent V (step S03 ). As a result, the IPA spreads over the entire area of the surface to be processed of the substrate W by the centrifugal force caused by the rotation of the substrate W, and an alkaline rinsing process is performed to replace the DIW filled on the surface to be processed of the substrate W with IPA. In addition, here, by substituting IPA with a surface tension lower than that of DIW, the surface tension between the patterns formed on the surface to be processed acting on the substrate W is reduced.

然後，如圖4的（A）所示，在驅動機構33使基板W與支撐部32一起旋轉的同時，第二揮發性溶劑供給部35向基板W的被處理面的旋轉中心供給作為第二揮發性溶劑H的PGMEA（步驟S04）。由此，藉由基板W的旋轉所帶來的離心力，PGMEA遍佈基板W的被處理面的整個區域，並且HMDS與基板W的被處理面結合而形成撥水化膜。即，存在於基板W的被處理面上的第一揮發性溶劑被置換為第二揮發性溶劑的PGMEA，被處理面的羥基置換為官能基，而形成撥水化膜。第二揮發性溶劑與第一揮發性溶劑相比，作用於基板W圖案之間的表面張力小。因此，作用於圖案之間的表面張力減小。與此同時，測定部38的檢測部38a對基板W上的膜厚進行測定（步驟S06）。Then, as shown in (A) of FIG. PGMEA of volatile solvent H (step S04). Thus, the PGMEA spreads over the entire area of the surface to be processed of the substrate W due to the centrifugal force caused by the rotation of the substrate W, and the HMDS is combined with the surface to be processed of the substrate W to form a water-repellent film. That is, the first volatile solvent present on the surface to be treated of the substrate W is replaced with PGMEA of the second volatile solvent, and the hydroxyl groups on the surface to be treated are replaced with functional groups to form a water-repellent film. Compared with the first volatile solvent, the second volatile solvent acts on the surface tension between the substrate W patterns smaller. Therefore, the surface tension acting between the patterns is reduced. At the same time, the detection unit 38 a of the measurement unit 38 measures the film thickness on the substrate W (step S06 ).

在由測定部38測定的膜厚在規定閾值的範圍內恰當的情況下（步驟S07的是（YES）），如圖5所示，一邊使基板W旋轉，一邊使加熱部36的燈36a點亮規定時間（幾秒至十幾秒以內的範圍內），由此將基板W急速加熱至產生萊頓弗羅斯特現象的溫度（PGMEA的沸點以上）（步驟S08）。由此，進行瞬時去除第二揮發性溶劑H的液膜的乾燥處理。When the film thickness measured by the measurement unit 38 is within the range of the predetermined threshold value (YES in step S07), as shown in FIG. By turning on for a predetermined time (within a few seconds to less than ten seconds), the substrate W is rapidly heated to a temperature at which the Leidenfrost phenomenon occurs (above the boiling point of PGMEA) (step S08 ). Thus, a drying process for instantaneously removing the liquid film of the second volatile solvent H is performed.

此處所說的乾燥處理並非單純的揮發所引起，而是利用在急速加熱過程中產生的萊頓弗羅斯特現象及撥水化膜的脫離、以及基板W的旋轉所帶來的離心力。即，藉由利用加熱在基板W的被處理面與未完全氣化的PGMEA的液膜的界面產生的氣層所引起的萊頓弗羅斯特現象，液膜上浮而成為液珠（液珠化）。其後，基板W上的撥水化膜的結合狀態被解除而去除。化學鍵的解除的機制如下所述。首先，藉由加熱至高溫，官能基（-CHx）藉由熱分解切斷與Si的鍵結，基板W上的位於周圍的氧與基板W上的Si及官能基相鍵合。由此，基板W上的Si氧化而熱氧化膜成長。即，在基板W的被處理面上形成氧化膜，但所述氧化膜殘留並無特別問題。另外，氧化後的官能基會變化為H 2O或CO 2等，但由於處於高溫下，因此H 2O蒸發，CO 2作為氣體而被排出。此外，加熱時，也可藉由關閉排氣部31f中的排氣閥，防止產生氣層前液膜氣化而產生過加熱狀態。 The drying process mentioned here is not simply caused by volatilization, but utilizes the Leidenfrost phenomenon, detachment of the water-repellent film, and centrifugal force caused by the rotation of the substrate W generated during the rapid heating process. That is, by utilizing the Leidenfrost phenomenon caused by the gas layer generated at the interface between the surface to be processed of the substrate W and the liquid film of the incompletely vaporized PGMEA by heating, the liquid film floats up to form droplets (beading). ). Thereafter, the bonded state of the water-repellent film on the substrate W is released and removed. The mechanism of chemical bond release is as follows. First, by heating to a high temperature, the functional group (-CHx) is thermally decomposed to break the bond with Si, and the surrounding oxygen on the substrate W is bonded to Si and the functional group on the substrate W. As a result, Si on the substrate W is oxidized to grow a thermally oxidized film. That is, although an oxide film is formed on the surface of the substrate W to be processed, there is no particular problem in that the oxide film remains. In addition, the oxidized functional group changes to H2O , CO2 , etc., but since it is at a high temperature, H2O evaporates and CO2 is discharged as a gas. In addition, during heating, it is also possible to close the exhaust valve in the exhaust portion 31f to prevent the liquid film from vaporizing before the gas layer is generated, resulting in an overheated state.

若示意性地表示所述現象，則如圖7的（A）所示隔著撥水化膜R存在於基板W的被處理面的圖案P上的包含HMDS的PGMEA的液膜F如圖7的（B）所示，由於燈36a的點亮而僅基板W被瞬間加熱，基板W的撥水化膜與PGMEA的界面比其他部分的PGMEA更早開始氣化，因此生成液膜F進行氣化而得的氣體的層、即氣層G。If this phenomenon is schematically represented, as shown in (A) of FIG. As shown in (B), only the substrate W is heated instantaneously due to the lighting of the lamp 36a, and the interface between the water-repellent film of the substrate W and the PGMEA starts to vaporize earlier than the other parts of the PGMEA, so a liquid film F is formed and gasifies. The layer of the gas obtained by melting, that is, the gas layer G.

因此，如圖7的（C）所示，圖案P上的液膜F藉由氣層G瞬間從圖案P浮起，如圖7的（D）所示，立即進行液珠化（萊頓弗羅斯特現象），從而切斷基板W的被處理面上的Si與-CHx的鍵結而去除撥水化膜R。如此，液膜F液珠化後，撥水化膜R從基板W被去除，但由於藉由燈36a可達成撥水化膜R瞬間（幾秒鐘內）氣化的300℃，因此可認為液珠化與撥水化膜R的去除幾乎同時發生。圖中，如塗黑的箭頭所示，對液膜F施加由旋轉帶來的離心力，所生成的各液珠由於離心力而從基板W上飛散，因此，如圖7的（E）所示，基板W的被處理面乾燥。此外，如上所述，由於與Si切斷鍵結的官能基與氧鍵合，而形成H 2O或CO 2，作為撥水化劑的矽烷偶合劑蒸發，因此乾燥室31內的氣氛優選為包含氧。 Therefore, as shown in (C) of FIG. 7 , the liquid film F on the pattern P instantly floats from the pattern P by the gas layer G, and as shown in (D) of FIG. Rost phenomenon), thereby cutting the bond between Si and -CHx on the surface of the substrate W to be processed, and removing the water-repellent film R. In this way, after the liquid film F is beaded, the water-repellent film R is removed from the substrate W. However, since the lamp 36a can reach 300°C where the water-repellent film R vaporizes instantly (within a few seconds), it can be considered The beading and the removal of the water-repellent membrane R occurred almost simultaneously. In the figure, as indicated by the blacked-in arrows, the centrifugal force due to the rotation is applied to the liquid film F, and the generated droplets are scattered from the substrate W by the centrifugal force. Therefore, as shown in (E) of FIG. 7 , The surface to be processed of the substrate W is dried. In addition, as described above, since the functional group that cuts the bond with Si bonds with oxygen to form H 2 O or CO 2 , and the silane coupling agent as a water-repellent agent evaporates, the atmosphere in the drying chamber 31 is preferably Contains oxygen.

如圖8所示，若為在基板W上的圖案P之間殘留有液膜F的狀態，則殘留有液膜F的部分的圖案P因液膜F的表面張力，而使圖案P靠近，從而使圖案P塌毀。在本實施方式中，如圖7的（A）所示，在整個基板W，由於圖案P的表面上存在撥水化膜R，而難以在圖案P之間形成液膜F，從而成為難以在圖案P之間存在液膜F的狀態。如此，由於無拉近圖案P彼此的液膜F，因此可防止圖案P的塌毀。同時使撥水化膜R從基板W脫離，而在基板W的被處理面上可去除不需要的撥水化膜R。因此，可減少圖案P的塌毀，使基板W乾燥。As shown in FIG. 8 , if the liquid film F remains between the patterns P on the substrate W, the pattern P at the portion where the liquid film F remains is brought closer to the pattern P by the surface tension of the liquid film F, The pattern P is thereby collapsed. In the present embodiment, as shown in (A) of FIG. 7 , since the water-repellent film R exists on the surface of the pattern P on the entire substrate W, it is difficult to form the liquid film F between the patterns P, making it difficult to A state where the liquid film F exists between the patterns P. In this way, since there is no liquid film F that draws the patterns P close together, the collapse of the patterns P can be prevented. At the same time, the water-repellent film R is detached from the substrate W, and unnecessary water-repellent film R can be removed from the surface of the substrate W to be treated. Therefore, the collapse of the pattern P can be reduced, and the substrate W can be dried.

其後，停止利用加熱部36進行加熱，使基板W旋轉的同時進行放置，從而進行冷卻（步驟S09），在驅動機構33停止基板W與支撐部32一起的旋轉後（步驟S10），搬送裝置200將基板W從開口31a搬出（步驟S11）。Thereafter, the heating by the heating unit 36 is stopped, and the substrate W is placed while being rotated to be cooled (step S09 ). 200 carries out the substrate W from the opening 31 a (step S11 ).

[效果] （1）如上所述的本實施方式的乾燥裝置（基板乾燥裝置）300包括：加熱部36，對基板W進行加熱；第一揮發性溶劑供給部34，向基板W的被處理面上供給第一揮發性溶劑V；第二揮發性溶劑供給部35，向基板W的被處理面上供給第二揮發性溶劑H，所述第二揮發性溶劑H包含用以形成撥水化膜的撥水化劑且氣化時的表面張力比第一揮發性溶劑V小；乾燥室31，收容有加熱部36、第一揮發性溶劑供給部34及第二揮發性溶劑供給部35，且在其中搬入在被處理面上形成有由處理液形成的液膜的狀態下的基板W；支撐部32，接收搬入至乾燥室31的基板W；驅動機構33，使支撐於支撐部32的基板W旋轉；以及控制裝置400，藉由從第一揮發性溶劑供給部34供給第一揮發性溶劑V，將形成於基板W的被處理面上的由處理液形成的液膜置換為第一揮發性溶劑V，藉由從第二揮發性溶劑供給部35供給第二揮發性溶劑H，將形成於基板W的被處理面上的第一揮發性溶劑V置換為第二揮發性溶劑H，並且在被處理面上形成撥水化膜，藉由使加熱部36對基板W進行加熱，使包含撥水化劑的第二揮發性溶劑H的液膜與基板W之間產生氣層，從而藉由基板W的旋轉所帶來的離心力將第二揮發性溶劑H的液膜排出。 [Effect] (1) The drying apparatus (substrate drying apparatus) 300 of this embodiment as described above includes: the heating unit 36 for heating the substrate W; A volatile solvent V; the second volatile solvent supply part 35 supplies the second volatile solvent H to the surface to be processed of the substrate W, and the second volatile solvent H includes water repellent for forming a water repellent film. Vaporization agent and the surface tension when gasification is smaller than the first volatile solvent V; Drying chamber 31 accommodates heating part 36, first volatile solvent supply part 34 and second volatile solvent supply part 35, and carries in it The substrate W in the state where a liquid film formed by the processing liquid is formed on the surface to be processed; the support part 32 receives the substrate W carried into the drying chamber 31; the drive mechanism 33 rotates the substrate W supported on the support part 32; And the control device 400, by supplying the first volatile solvent V from the first volatile solvent supply part 34, replaces the liquid film formed of the processing liquid formed on the surface of the substrate W to be processed by the first volatile solvent V , by supplying the second volatile solvent H from the second volatile solvent supply part 35, the first volatile solvent V formed on the surface to be processed of the substrate W is replaced with the second volatile solvent H, and the processed A water-repellent film is formed on the surface, and by heating the substrate W with the heating unit 36, an air layer is generated between the liquid film of the second volatile solvent H containing the water-repellent agent and the substrate W, so that the substrate W The centrifugal force brought by the rotation will discharge the liquid film of the second volatile solvent H.

本實施方式的基板處理裝置1包括：處理裝置110，藉由一邊使基板W旋轉一邊供給第一處理液來進行處理；洗淨裝置120，藉由一邊使由處理裝置110處理完的基板W旋轉一邊供給第二處理液來進行洗淨；乾燥裝置300；以及搬送裝置200，將在洗淨裝置120中洗淨後的基板W在形成有由洗淨裝置120供給的第二處理液形成的液膜的狀態下搬出並搬入至乾燥裝置300。The substrate processing apparatus 1 of this embodiment includes: a processing apparatus 110 that performs processing by supplying the first processing liquid while rotating the substrate W; and a cleaning apparatus 120 that rotates the substrate W that has been processed by the processing apparatus 110 Cleaning is performed while supplying the second processing liquid; the drying device 300; The film is unloaded and loaded into the drying device 300 in the film state.

本實施方式的基板乾燥方法中，形成由處理液形成的液膜，藉由驅動機構33使支撐於支撐部32的基板W旋轉的同時，藉由從第一揮發性溶劑供給部34供給第一揮發性溶劑V而將液膜置換為第一揮發性溶劑V，藉由從第二揮發性溶劑供給部35供給包含用以形成撥水化膜的撥水化劑且氣化時的表面張力比第一揮發性溶劑V小的第二揮發性溶劑，將第一揮發性溶劑V的液膜置換為第二揮發性溶劑H，並且在基板W上形成撥水化膜，藉由利用加熱部36對基板W進行加熱，使包含撥水化劑的第二揮發性溶劑H的液膜與基板W之間產生氣層，從而藉由基板W的旋轉所帶來的離心力將第二揮發性溶劑H的液膜排出。In the substrate drying method of the present embodiment, a liquid film formed of a processing liquid is formed, and the substrate W supported by the support portion 32 is rotated by the drive mechanism 33 , and the first volatile solvent is supplied from the first volatile solvent supply portion 34 . Volatile solvent V to replace the liquid film with the first volatile solvent V, by supplying a water-repellent agent for forming a water-repellent film from the second volatile solvent supply part 35 and vaporizing the surface tension ratio The second volatile solvent with a smaller first volatile solvent V replaces the liquid film of the first volatile solvent V with the second volatile solvent H, and forms a water-repellent film on the substrate W by using the heating unit 36 The substrate W is heated to generate an air layer between the liquid film of the second volatile solvent H containing the water-repelling agent and the substrate W, so that the second volatile solvent H is released by the centrifugal force caused by the rotation of the substrate W. liquid film discharge.

如此，在一邊使基板W旋轉一邊進行加熱而成為過加熱狀態時，在由於撥水化膜難以在圖案之間形成液膜的基礎上，藉由萊頓弗羅斯特現象使液膜浮起，由此能夠利用離心力瞬間去除整個液膜。In this way, when the substrate W is heated while rotating to become an overheated state, since it is difficult to form a liquid film between the patterns due to the water-repellent film, the liquid film is floated due to the Leidenfrost phenomenon, This enables the entire liquid film to be removed instantaneously by centrifugal force.

因此，能夠在同一裝置內、同一處理室內對基板W進行乾燥，不需要與乾燥裝置300獨立的等離子體處理裝置或UV照射裝置等去除撥水化膜的去除裝置，並且不需要從乾燥裝置300向去除裝置的搬送工序。因此，可使基板處理裝置1簡化、小型化，並且工序數減少，從而生產性提高。進而，也能夠去除利用UV照射難以去除的圖案底部的液膜。Therefore, the substrate W can be dried in the same device and in the same processing chamber, and there is no need for a removal device for removing the water-repellent film, such as a plasma processing device or a UV irradiation device independent of the drying device 300, and it is not necessary to remove the water-repellent film from the drying device 300. Transfer process to removal device. Therefore, the substrate processing apparatus 1 can be simplified and downsized, the number of steps can be reduced, and productivity can be improved. Furthermore, it is also possible to remove the liquid film at the bottom of the pattern which is difficult to remove by UV irradiation.

另外，由於可將第二揮發性溶劑H的液膜整體與撥水化膜一起瞬間去除，因此在基板W的被處理面上，難以產生部分的液膜的殘留。因此，能夠降低在鄰接的圖案之間因液膜的殘留的有無、殘留量的不同而張力產生差異，從而發生圖案塌毀的可能性。進而，也可降低由基板W的中心與外周的離心力的差、液膜向外周側的集中等引起的液膜的殘留偏差。In addition, since the entire liquid film of the second volatile solvent H can be removed instantaneously together with the water-repellent film, it is difficult for a part of the liquid film to remain on the surface of the substrate W to be processed. Therefore, it is possible to reduce the possibility of occurrence of pattern collapse due to differences in tension between adjacent patterns due to differences in the presence or absence and amount of remaining liquid film. Furthermore, it is also possible to reduce residual variation of the liquid film caused by a difference in centrifugal force between the center and the outer periphery of the substrate W, concentration of the liquid film toward the outer peripheral side, and the like.

（2）藉由加熱部36對基板W進行加熱，使供給至基板W的被處理面的第二揮發性溶劑H的液膜與基板W之間產生氣層，此時形成於基板W的被處理面的撥水化膜從基板W的被處理面上被去除。因此，能夠藉由加熱解除撥水化膜的結合，利用基板W旋轉的離心力瞬間去除液膜及撥水化膜。(2) The substrate W is heated by the heating unit 36 to generate an air layer between the liquid film of the second volatile solvent H supplied to the surface to be processed of the substrate W and the substrate W. The water-repellent film on the treatment surface is removed from the surface of the substrate W to be treated. Therefore, the bond of the water-repellent film can be released by heating, and the liquid film and the water-repellent film can be instantly removed by the centrifugal force of the rotation of the substrate W.

此外，為了藉由加熱使撥水化膜脫離，即使要從噴嘴供給過熱液，也需要處理亞臨界液的系統，因此安全機構增加，成本變高，但在本實施方式中，藉由一邊使基板W旋轉一邊利用加熱部36對基板W進行加熱，不需要追加的裝置，從而能夠瞬間去除液膜。In addition, in order to remove the water-repellent film by heating, even if the superheated liquid is supplied from the nozzle, a subcritical liquid treatment system is required, so the safety mechanism increases and the cost increases. However, in this embodiment, by using The substrate W is heated by the heating unit 36 while the substrate W is rotating, and the liquid film can be removed instantaneously without requiring an additional device.

（3）包括對支撐於支撐部32的基板W的第一揮發性溶劑的膜厚進行測定的測定部38，控制裝置400在判定為測定部38進行測定而得的作為測定結果的膜厚處於規定的閾值的範圍內的情況下，開始利用加熱部36進行加熱。由此，可將基板W上的液膜調整為恰當的膜厚，然後使基板W乾燥。若膜厚過薄，則加熱時基板W的被處理面上的液膜會不均勻地乾燥，因此會產生一部分圖案的圖案塌毀。另外，若膜厚過厚，則液珠數量增加，因此在液珠藉由旋轉的基板W的離心力而向被處理面外排出之前，與基板W的被處理面接觸的接觸部位增加。由於基板W的被處理面藉由與液珠接觸時的氣化熱而被冷卻，因此，若液珠數過多，則即使在急速加熱過程中，在基板W的被處理面的一部分上也會產生成為產生萊頓弗羅斯特現象的溫度以下的部位、即藉由通常乾燥而非急速乾燥進行乾燥的部分。在本實施方式中，由於在調整為恰當的膜厚後對基板W進行加熱，因此可防止產生此種由通常乾燥引起的乾燥狀態。(3) The measurement unit 38 that measures the film thickness of the first volatile solvent of the substrate W supported by the support unit 32 is included, and the control device 400 determines that the film thickness as a measurement result obtained by the measurement unit 38 is between If it is within the range of the predetermined threshold value, heating by the heating unit 36 is started. Thereby, the liquid film on the substrate W can be adjusted to an appropriate film thickness, and the substrate W can be dried after that. If the film thickness is too thin, the liquid film on the surface to be processed of the substrate W will be dried unevenly during heating, so that a part of the pattern will be collapsed. In addition, if the film thickness is too thick, the number of liquid droplets increases, so the number of contact sites with the surface to be processed of the substrate W increases before the liquid droplets are discharged out of the surface to be processed by the centrifugal force of the rotating substrate W. Since the surface to be processed of the substrate W is cooled by the heat of vaporization when it comes into contact with the liquid droplets, if the number of liquid droplets is too large, even in the rapid heating process, a part of the surface to be processed of the substrate W will be cooled. A temperature lower than the temperature at which the Leidenfrost phenomenon occurs occurs, that is, a part that is dried by normal drying instead of rapid drying. In this embodiment, since the substrate W is heated after adjusting to an appropriate film thickness, such a dry state due to normal drying can be prevented.

（變形例） （1）第一揮發性溶劑並不限於IPA。例如，可使用氫氟醚（hydrogen fluoride ether，HFE）等。作為撥水化劑的矽烷偶合劑並不限定於HMDS。例如，可使用四甲基矽烷基二乙胺（tetramethyl silyl diethyl amine，TMSDEA）等。第二揮發性溶劑也並不限定於所述PGMEA。例如，也可使用IPA。 (modified example) (1) The first volatile solvent is not limited to IPA. For example, hydrofluoroether (hydrogen fluoride ether, HFE) etc. can be used. The silane coupling agent used as a water-repellent agent is not limited to HMDS. For example, tetramethyl silyl diethylamine (TMSDEA) etc. can be used. The second volatile solvent is also not limited to the PGMEA. For example, IPA may also be used.

（2）關於處理裝置100的處理，只要是最終需要洗淨以及乾燥的處理，則處理的內容及處理液便不限定於上文中的示例。成為處理對象的基板W以及處理液也不限定於上文中的示例。(2) As for the processing by the processing device 100 , as long as washing and drying are finally required, the content of the processing and the processing liquid are not limited to the above examples. The substrate W and the processing liquid to be processed are also not limited to the above examples.

[其他實施方式] 以上對本發明的實施方式及各部的變形例進行了說明，但所述實施方式或各部的變形例是作為一例來提示的，並非意圖限定發明的範圍。上文所述的這些新穎的實施方式能夠以其他各種形態加以實施，可在不脫離發明主旨的範圍內進行各種省略、替換、變更。這些實施方式及其變形包含在發明的範圍或主旨內，並且包含在申請專利範圍記載的發明中。 [Other implementations] As mentioned above, although embodiment of this invention and the modification of each part were demonstrated, the said embodiment and the modification of each part were shown as an example, and it does not intend limiting the range of invention. The novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope or spirit of the invention, and are included in the invention described in the claims.

1:基板處理裝置 1a:腔室 1b:晶片匣 1c:搬送機器人 1d:緩衝單元 11:洗淨室 11a:開口 11b:門 12:支撐部 13:旋轉機構 14:擋罩 15:供給部 15a:噴嘴 15b:移動機構 20:搬運裝置 21:機械手 22:移動機構 31:乾燥室 31a:開口 31b:門 31c:導入口 31d:排氣口 31e:供氣部 31f:排氣部 32:支撐部 32a:旋轉台 32b:保持構件 32c:旋轉軸 33:驅動機構 33a:旋轉部 33b:升降部 34:第一揮發性溶劑供給部 34a:噴嘴 34b:擺動臂 34c:擺動機構 35:第二揮發性溶劑供給部 35a:噴嘴 35b:擺動臂 35c:擺動機構 36:加熱部 36a:燈 36b:窗部 37:擋罩 38:測定部 38a:檢測部 38b:擺動臂 38c:擺動機構 41:機構控制部 42:膜厚解析部 43:加熱控制部 110:處理裝置 120:洗淨裝置 200:搬送裝置 300:乾燥裝置（基板乾燥裝置） 400:控制裝置 F:液膜 G:氣層 H:第二揮發性溶劑 L:洗淨液 P:圖案 R:撥水化膜 W:基板 V:第一揮發性溶劑 1: Substrate processing device 1a: chamber 1b: wafer cassette 1c: Transfer robot 1d: buffer unit 11: Clean room 11a: opening 11b: door 12: Support part 13: Rotating mechanism 14: Shield 15: Supply Department 15a: Nozzle 15b: Mobile Mechanism 20: Handling device 21: Manipulator 22: Mobile Mechanism 31: drying room 31a: opening 31b: door 31c: import port 31d: Exhaust port 31e: Gas supply department 31f: exhaust part 32: support part 32a: Rotary table 32b: Holding member 32c: axis of rotation 33: Driving mechanism 33a: rotating part 33b: Lifting part 34: The first volatile solvent supply part 34a: Nozzle 34b: swing arm 34c: Swing mechanism 35: Second volatile solvent supply unit 35a: Nozzle 35b: swing arm 35c: Swing mechanism 36: heating part 36a: lamp 36b: window 37: Shield 38: Measurement Department 38a: Detection Department 38b: Swing arm 38c: Swing mechanism 41: Institutional Control Department 42:Film thickness analysis department 43: Heating Control Department 110: processing device 120: cleaning device 200: Conveying device 300: drying device (substrate drying device) 400: Control device F: liquid film G: air layer H: second volatile solvent L: washing liquid P: pattern R: water repellent film W: Substrate V: the first volatile solvent

圖1為表示實施方式的基板處理裝置的簡略結構圖。 圖2為表示圖1的基板處理裝置的洗淨裝置及乾燥裝置的結構圖。 圖3的（A）及圖3的（B）為表示乾燥裝置的基板搬入時（A）、第一揮發性溶劑供給時（B）的內部結構圖。 圖4的（A）及圖4的（B）為表示乾燥裝置的第二撥水性溶劑供給時（A）、第一揮發性溶劑供給時及膜厚測定時（B）的內部結構圖。 圖5為表示乾燥裝置的基板乾燥時的內部結構圖。 圖6為表示實施方式的基板乾燥處理的次的流程圖。 圖7的（A）～圖7的（E）為示意性地表示利用了萊頓弗羅斯特現象的乾燥處理的流程的說明圖。 圖8為表示殘留在圖案內的液膜的說明圖。 FIG. 1 is a schematic configuration diagram showing a substrate processing apparatus according to an embodiment. FIG. 2 is a configuration diagram showing a cleaning device and a drying device of the substrate processing apparatus in FIG. 1 . FIG. 3(A) and FIG. 3(B) are internal configuration diagrams showing the drying apparatus at the time of board loading (A) and the time of supplying the first volatile solvent (B). 4(A) and 4(B) are diagrams showing the internal structure of the drying device at the time of supplying the second water-repellent solvent (A), the time of supplying the first volatile solvent, and the time of film thickness measurement (B). Fig. 5 is a view showing the internal structure of the drying device when the substrate is dried. FIG. 6 is a flow chart showing the sequence of the substrate drying process according to the embodiment. 7(A) to 7(E) are explanatory diagrams schematically showing the flow of the drying process using the Leidenfrost phenomenon. FIG. 8 is an explanatory view showing a liquid film remaining in a pattern.

1:基板處理裝置 1: Substrate processing device

11:洗淨室 11: Clean room

11a:開口 11a: opening

11b:門 11b: door

12:支撐部 12: Support part

13:旋轉機構 13: Rotating mechanism

14:擋罩 14: Shield

15:供給部 15: Supply Department

15a:噴嘴 15a: Nozzle

15b:移動機構 15b: Mobile Mechanism

20:搬運裝置 20: Handling device

21:機械手 21: Manipulator

22:移動機構 22: Mobile Mechanism

31:乾燥室 31: drying room

31a:開口 31a: opening

31b:門 31b: door

31c:導入口 31c: import port

31d:排氣口 31d: Exhaust port

31e:供氣部 31e: Gas supply department

31f:排氣部 31f: exhaust part

32:支撐部 32: support part

32a:旋轉台 32a: Rotary table

32b:保持構件 32b: Holding member

32c:旋轉軸 32c: axis of rotation

33:驅動機構 33: Driving mechanism

34:第一揮發性溶劑供給部 34: The first volatile solvent supply part

34a:噴嘴 34a: Nozzle

34b:擺動臂 34b: swing arm

34c:擺動機構 34c: Swing mechanism

35:第二揮發性溶劑供給部 35: Second volatile solvent supply unit

35a:噴嘴 35a: Nozzle

35b:擺動臂 35b: swing arm

35c:擺動機構 35c: Swing mechanism

36:加熱部 36: heating part

36a:燈 36a: lamp

36b:窗部 36b: window

37:擋罩 37: Shield

38:測定部 38: Measurement Department

38a:檢測部 38a: Detection Department

38b:擺動臂 38b: Swing arm

38c:擺動機構 38c: Swing mechanism

41:機構控制部 41: Institutional Control Department

42:膜厚解析部 42:Film thickness analysis department

43:加熱控制部 43: Heating Control Department

120:洗淨裝置 120: cleaning device

200:搬送裝置 200: Conveying device

300:乾燥裝置(基板乾燥裝置) 300: drying device (substrate drying device)

400:控制裝置 400: Control device

Claims (5)

一種基板乾燥裝置，包括： 加熱部，對基板進行加熱； 第一揮發性溶劑供給部，向所述基板的被處理面上供給第一揮發性溶劑； 第二揮發性溶劑供給部，向所述基板的被處理面上供給第二揮發性溶劑，所述第二揮發性溶劑包含用以形成撥水化膜的撥水化劑且氣化時的表面張力比所述第一揮發性溶劑小； 乾燥室，收容有所述加熱部、所述第一揮發性溶劑供給部及所述第二揮發性溶劑供給部，且在其中搬入在被處理面上形成有由處理液形成的液膜的狀態下的所述基板； 支撐部，接收搬入至所述乾燥室的所述基板； 驅動機構，使支撐於所述支撐部的所述基板旋轉；以及 控制裝置，藉由從所述第一揮發性溶劑供給部供給所述第一揮發性溶劑，將形成於所述基板的被處理面上的由所述處理液形成的液膜置換為所述第一揮發性溶劑， 藉由從所述第二揮發性溶劑供給部供給所述第二揮發性溶劑，將形成於所述基板的被處理面上的所述第一揮發性溶劑置換為所述第二揮發性溶劑，並且在所述基板的被處理面上形成所述撥水化膜， 藉由使所述加熱部對所述基板進行加熱，使包含所述撥水化劑的所述第二揮發性溶劑的液膜與所述基板之間產生氣層，從而藉由所述基板的旋轉所帶來的離心力將所述第二揮發性溶劑的液膜排出。 A substrate drying device, comprising: The heating part is used to heat the substrate; a first volatile solvent supply unit, which supplies a first volatile solvent to the surface to be processed of the substrate; The second volatile solvent supply unit supplies a second volatile solvent to the surface of the substrate to be processed, and the second volatile solvent includes a water-repellent agent for forming a water-repellent film and is vaporized on the surface less tension than said first volatile solvent; a drying chamber that accommodates the heating unit, the first volatile solvent supply unit, and the second volatile solvent supply unit, and carries in a state where a liquid film formed of a treatment liquid is formed on the surface to be treated; under said substrate; a support part for receiving the substrate carried into the drying chamber; a driving mechanism to rotate the substrate supported by the support part; and The control device replaces the liquid film of the processing liquid formed on the surface to be processed of the substrate with the first volatile solvent by supplying the first volatile solvent from the first volatile solvent supply unit. a volatile solvent, By supplying the second volatile solvent from the second volatile solvent supply unit, the first volatile solvent formed on the surface to be processed of the substrate is replaced by the second volatile solvent, and forming the water-repellent film on the treated surface of the substrate, By heating the substrate with the heating unit, an air layer is generated between the liquid film of the second volatile solvent containing the water-repelling agent and the substrate, thereby The centrifugal force brought by the rotation expels the liquid film of the second volatile solvent. 如請求項1所述的基板乾燥裝置，其中藉由所述加熱部對所述基板進行加熱，使供給至所述基板的被處理面的所述第二揮發性溶劑的液膜與所述基板之間產生氣層，此時形成於所述基板的被處理面的所述撥水化膜從所述基板的被處理面上被去除。The substrate drying apparatus according to claim 1, wherein the substrate is heated by the heating unit so that the liquid film of the second volatile solvent supplied to the surface to be processed of the substrate is mixed with the substrate. At this time, the water-repellent film formed on the surface to be processed of the substrate is removed from the surface to be processed of the substrate. 如請求項2所述的基板乾燥裝置，其中包括測定部，所述測定部對支撐於所述支撐部的所述基板的所述第一揮發性溶劑及所述第二揮發性溶劑的液膜的膜厚進行測定， 所述控制裝置在判定為所述測定部進行測定而得的作為測定結果的膜厚處於規定的閾值的範圍內的情況下，開始利用所述加熱部進行加熱。 The substrate drying apparatus according to claim 2, further comprising a measurement unit that measures liquid films of the first volatile solvent and the second volatile solvent on the substrate supported by the support unit The film thickness was measured, The control device starts heating by the heating unit when it is determined that the film thickness as a measurement result obtained by the measurement unit is within a predetermined threshold range. 一種基板處理裝置，包括： 處理裝置，藉由一邊使所述基板旋轉一邊供給第一處理液來進行處理； 洗淨裝置，藉由一邊使由所述處理裝置處理完的所述基板旋轉一邊供給第二處理液來進行洗淨； 如請求項1至3中任一項所述的基板乾燥裝置；以及 搬送裝置，將在所述洗淨裝置中洗淨後的所述基板在形成有由所述洗淨裝置供給的所述第二處理液所形成的液膜的狀態下搬出並搬入至所述基板乾燥裝置。 A substrate processing device, comprising: a processing apparatus that performs processing by supplying a first processing liquid while rotating the substrate; a cleaning device for cleaning by supplying a second processing liquid while rotating the substrate processed by the processing device; The substrate drying device as described in any one of claims 1 to 3; and a transfer device for carrying out and carrying the substrate cleaned by the cleaning device into the substrate in a state where a liquid film of the second processing liquid supplied from the cleaning device is formed. Drying device. 一種基板乾燥方法，包括： 形成有由處理液形成的液膜且支撐於支撐部的基板在藉由驅動機構被旋轉的同時，藉由從第一揮發性溶劑供給部供給第一揮發性溶劑而將由所述處理液形成的液膜置換為所述第一揮發性溶劑， 藉由從第二揮發性溶劑供給部供給包含用以形成撥水化膜的撥水化劑且氣化時的表面張力比所述第一揮發性溶劑小的第二揮發性溶劑，將所述第一揮發性溶劑的液膜置換為所述第二揮發性溶劑，並且在所述基板上形成撥水化膜， 藉由利用加熱部對所述基板進行加熱，使包含所述撥水化劑的所述第二揮發性溶劑的液膜與所述基板之間產生氣層，從而藉由所述基板的旋轉所帶來的離心力將所述第二揮發性溶劑的液膜排出。 A substrate drying method, comprising: The substrate formed with the liquid film of the processing liquid and supported on the support part is rotated by the drive mechanism, and the substrate formed of the processing liquid is supplied by supplying the first volatile solvent from the first volatile solvent supply part. The liquid film is replaced by the first volatile solvent, By supplying a second volatile solvent containing a water-repellent agent for forming a water-repellent film from a second volatile solvent supply part and having a surface tension lower than that of the first volatile solvent when vaporized, the the liquid film of the first volatile solvent is replaced by the second volatile solvent, and a water-repellent film is formed on the substrate, By heating the substrate with the heating unit, an air layer is generated between the liquid film of the second volatile solvent containing the water-repelling agent and the substrate, and the substrate is rotated by the substrate. The resulting centrifugal force expels the liquid film of the second volatile solvent.
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