TW202312274A - Plasma processing apparatus and plasma processing method - Google Patents

Plasma processing apparatus and plasma processing method Download PDF

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TW202312274A
TW202312274A TW111128882A TW111128882A TW202312274A TW 202312274 A TW202312274 A TW 202312274A TW 111128882 A TW111128882 A TW 111128882A TW 111128882 A TW111128882 A TW 111128882A TW 202312274 A TW202312274 A TW 202312274A
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Taiwan
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radio frequency
frequency power
period
edge ring
bias
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TW111128882A
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Chinese (zh)
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輿水地塩
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日商東京威力科創股份有限公司
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Priority claimed from JP2022106154A external-priority patent/JP2023025675A/en
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Publication of TW202312274A publication Critical patent/TW202312274A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

There is a plasma processing apparatus comprising: a chamber; a substrate support configured to support a substrate and an edge ring; high-frequency power supply configured to generate first high-frequency power via the substrate and second high-frequency power via the edge ring; and bias power supply configured to generate first electric bias energy supplied to the substrate and second electric bias energy supplied to the edge ring, wherein the first electric bias energy and the second electric bias energy have a waveform repeatedly at a cycle, the cycle includes a first period in which voltage of each of the first and second electric bias energies has a positive level with respect to an average value of the voltage within the cycle, and a second period in which the voltage of each of the first and second electric bias energies has a negative level with respect to the average value.

Description

電漿處理裝置及電漿處理方法Plasma treatment device and plasma treatment method

本發明之例示實施形態係有關於電漿處理裝置及電漿處理方法。Exemplary embodiments of the present invention relate to a plasma treatment device and a plasma treatment method.

電漿處理裝置在對基板之電漿處理中使用。電漿處理裝置具備腔室及基板支撐部。基板支撐部設於腔室內。基板支撐部支撐基板及邊緣環(或聚焦環)。邊緣環之厚度會因電漿處理而減少。下述專利文獻1揭示有：當邊緣環之厚度小時，對邊緣環施加負直流電壓的電漿處理裝置。當施加負直流電壓時，邊緣環上之鞘層會增厚，而消除基板上之鞘層的上端位置與邊緣環上之鞘層的上端位置之差。 [先前技術文獻] [專利文獻] Plasma processing equipment is used for plasma processing of substrates. The plasma processing apparatus includes a chamber and a substrate support unit. The substrate supporting part is arranged in the chamber. The substrate supporting part supports the substrate and the edge ring (or focus ring). The thickness of the edge ring is reduced by plasma treatment. The following Patent Document 1 discloses a plasma processing apparatus that applies a negative DC voltage to the edge ring when the thickness of the edge ring is small. When a negative DC voltage is applied, the sheath on the edge ring will thicken, and the difference between the upper end position of the sheath layer on the substrate and the upper end position of the sheath layer on the edge ring will be eliminated. [Prior Art Literature] [Patent Document]

[專利文獻1]日本專利公開公報2008-227063號[Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-227063

[發明欲解決之課題][Problem to be solved by the invention]

本發明提供一種技術，在對邊緣環供給偏壓能量之週期內，縮小基板上之鞘層的上端位置與邊緣環上之鞘層的上端位置之間的差。 [用以解決課題之手段] The present invention provides a technique for narrowing the difference between the upper end position of the sheath on the substrate and the upper end position of the sheath on the edge ring during a period of supplying bias energy to the edge ring. [Means to solve the problem]

在一例示實施形態中提供了電漿處理裝置，該電漿處理裝置具備腔室、基板支撐部、至少一個射頻電源、及至少一個偏壓電源。基板支撐部設於腔室內，用以支撐基板及邊緣環。至少一個射頻電源用以產生經由基板而在基板之上方耦合於電漿的第1射頻電力及經由邊緣環而在邊緣環之上方耦合於電漿的第2射頻電力。至少一個偏壓電源用以產生供給予基板之第1偏壓能量及供給予邊緣環之第2偏壓能量。第1偏壓能量及第2偏壓能量具備以具有偏壓頻率之倒數的時間長度之偏壓週期反覆出現的波形。偏壓週期包含第1期間及第2期間。在第1期間，第1偏壓能量及第2偏壓能量各自之電壓具有相對於偏壓週期內之該電壓的平均值為正的位準。在第2期間，第1偏壓能量及第2偏壓能量各自之電壓具有相對於該平均值為負的位準。在第1期間，將第1射頻電力之功率位準或第2射頻電力之功率位準設定成使基板上之鞘層的上端位置與邊緣環上之鞘層的上端位置之間的差縮小。 [發明之效果] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, at least one radio frequency power source, and at least one bias power source. The substrate supporting part is arranged in the chamber for supporting the substrate and the edge ring. At least one RF power source is used to generate a first RF power coupled to the plasma above the substrate via the substrate and a second RF power coupled to the plasma above the edge ring via the edge ring. At least one bias power supply is used to generate the first bias energy for the substrate and the second bias energy for the edge ring. The first bias energy and the second bias energy have waveforms that repeatedly appear in a bias cycle having a time length that is the reciprocal of the bias frequency. The bias cycle includes a first period and a second period. In the first period, the respective voltages of the first bias energy and the second bias energy have positive levels with respect to the average value of the voltages in the bias cycle. In the second period, each voltage of the first bias energy and the second bias energy has a negative level with respect to the average value. In the first period, the power level of the first radio frequency power or the power level of the second radio frequency power is set to reduce the difference between the upper end position of the sheath on the substrate and the upper end position of the sheath on the edge ring. [Effect of Invention]

根據一例示實施形態，在供給予邊緣環偏壓能量的週期內，可使基板上之鞘層的上端位置與邊緣環上之鞘層的上端位置之間的差縮小。According to an exemplary embodiment, the difference between the position of the upper end of the sheath on the substrate and the position of the upper end of the sheath on the edge ring can be reduced during the cycle of supplying bias energy to the edge ring.

[用以實施發明之形態][Mode for Carrying out the Invention]

以下，參照圖式，就各種例示實施形態，詳細地說明。此外，在各圖式，對同一或相當之部分附上同一符號。Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In addition, in each drawing, the same code|symbol is attached|subjected to the same or equivalent part.

圖1及圖2係概略地顯示一例示實施形態之電漿處理裝置的圖。1 and 2 are diagrams schematically showing a plasma processing apparatus according to an exemplary embodiment.

在一實施形態，電漿處理系統包含電漿處理裝置1及控制部2。電漿處理裝置1包含電漿處理腔室10、基板支撐部11及電漿生成部12。電漿處理腔室10具有電漿處理空間。又，電漿處理腔室10具有用以對電漿處理空間供給至少一種處理氣體之至少一個氣體供給口、用以由電漿處理空間排出氣體之至少一個氣體排出口。氣體供給口連接於後述氣體供給部20，氣體排出口連接於後述排氣系統40。基板支撐部11配置於電漿處理空間內，具有用以支撐基板之基板支撐面。In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2 . The plasma processing apparatus 1 includes a plasma processing chamber 10 , a substrate supporting part 11 and a plasma generating part 12 . The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 to be described later, and the gas discharge port is connected to an exhaust system 40 to be described later. The substrate supporting part 11 is disposed in the plasma processing space and has a substrate supporting surface for supporting the substrate.

電漿生成部12用以由供給予電漿處理空間內之至少一種處理氣體生成電漿。在電漿處理空間形成之電漿亦可為電容耦合電漿(CCP；Capacitively Coupled Plasma)、感應耦合電漿(ICP；Inductively Coupled Plasma)、ECR電漿(Electron-Cyclotron-resonance plasma：電子迴旋共振電漿)、螺旋波激發電漿(HWP：Helicon Wave Plasma)或表面波電漿(SWP：Surface Wave Plasma)等。The plasma generating unit 12 is used for generating plasma from at least one processing gas supplied to the plasma processing space. The plasma formed in the plasma processing space can also be capacitively coupled plasma (CCP; Capacitively Coupled Plasma), inductively coupled plasma (ICP; Inductively Coupled Plasma), ECR plasma (Electron-Cyclotron-resonance plasma: electron cyclotron resonance Plasma), Helicon Wave Plasma (HWP: Helicon Wave Plasma) or Surface Wave Plasma (SWP: Surface Wave Plasma), etc.

控制部2處理可使電漿處理裝置1執行在本發明所述之各種程序的電腦可執行命令。控制部2用以將電漿處理裝置1之各要件控制成執行在此所述之各種程序。在一實施形態，電漿處理裝置1亦可包含控制部2之一部分或全部。控制部2亦可包含例如電腦2a。電腦2a亦可包含例如處理部(CPU：Central Processing Unit：中央處理單元)2a1、記憶部2a2、及通信介面2a3。處理部2a1用以依據儲存於記憶部2a2之程式，進行各種控制動作。記憶部2a2亦可包含RAM(Random Access Memory：隨機存取記憶體)、ROM(Read Only Memory：唯讀記憶體)、HDD(Hard Disk Drive：硬碟機)、SSD(Solid State Drive：固態硬碟)或此等之組合。通信介面2a3亦可藉由LAN(Local Area Network：區域網路)等通信線路與電漿處理裝置1之間進行通信。The control unit 2 processes computer-executable commands that enable the plasma processing apparatus 1 to execute various programs described in the present invention. The control unit 2 is used to control each element of the plasma processing apparatus 1 to execute various programs described herein. In one embodiment, the plasma processing apparatus 1 may also include part or all of the control unit 2 . The control unit 2 may also include, for example, a computer 2a. The computer 2a may also include, for example, a processing unit (CPU: Central Processing Unit: Central Processing Unit) 2a1, a memory unit 2a2, and a communication interface 2a3. The processing unit 2a1 is used to perform various control actions according to the programs stored in the memory unit 2a2. The memory portion 2a2 may also include RAM (Random Access Memory: random access memory), ROM (Read Only Memory: read-only memory), HDD (Hard Disk Drive: hard disk drive), SSD (Solid State Drive: solid state hard drive) disc) or a combination thereof. The communication interface 2a3 can also communicate with the plasma processing device 1 through a communication line such as a LAN (Local Area Network: Local Area Network).

以下，就作為電漿處理裝置1之一例的電容耦合電漿處理裝置之結構例作說明。電容耦合電漿處理裝置1包含電漿處理腔室10、氣體供給部20、及排氣系統40。又，電漿處理裝置1包含基板支撐部11及氣體導入部。氣體導入部用以將至少一種處理氣體導入電漿處理腔室10內。氣體導入部包含噴淋頭13。基板支撐部11配置於電漿處理腔室10內。噴淋頭13配置於基板支撐部11之上方。在一實施形態，噴淋頭13構成電漿處理腔室10之頂部(ceiling)的至少一部分。電漿處理腔室10具有以噴淋頭13、電漿處理腔室10之側壁10a及基板支撐部11定出之電漿處理空間10s。側壁10a接地。噴淋頭13及基板支撐部11與電漿處理腔室10之殼體電性絕緣。Hereinafter, a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10 , a gas supply unit 20 , and an exhaust system 40 . In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction part is used for introducing at least one processing gas into the plasma processing chamber 10 . The gas introduction part includes a shower head 13 . The substrate supporting part 11 is disposed in the plasma processing chamber 10 . The shower head 13 is disposed above the substrate supporting part 11 . In one embodiment, the showerhead 13 forms at least a part of the ceiling of the plasma processing chamber 10 . The plasma processing chamber 10 has a plasma processing space 10 s defined by a shower head 13 , a side wall 10 a of the plasma processing chamber 10 , and a substrate supporting portion 11 . The side wall 10a is grounded. The shower head 13 and the substrate supporting portion 11 are electrically insulated from the casing of the plasma processing chamber 10 .

基板支撐部11設於電漿處理腔室10內。基板支撐部11用以支撐載置於其上之基板W及邊緣環ER。邊緣環ER呈環形，由如矽、碳化矽、石英這樣的材料形成。基板W配置於基板支撐部11上且以邊緣環ER包圍之區域中。又，雖省略圖示，基板支撐部11亦可包含用以將基板W及邊緣環ER中至少一個調節成目標溫度之溫度調節模組。溫度調節模組具有加熱器、導熱媒體、流道、或此等之組合。如鹵水或氣體這樣的導熱媒體於流道流動。又，基板支撐部11亦可包含用以對基板W的背面與基板支撐面之間供給導熱氣體的導熱氣體供給部。The substrate supporting part 11 is disposed in the plasma processing chamber 10 . The substrate supporting portion 11 is used to support the substrate W and the edge ring ER placed thereon. The edge ring ER is annular and is formed of materials such as silicon, silicon carbide, and quartz. The substrate W is disposed on the substrate supporting part 11 and in a region surrounded by the edge ring ER. Also, although not shown, the substrate supporting part 11 may also include a temperature adjustment module for adjusting at least one of the substrate W and the edge ring ER to a target temperature. The temperature regulating module has a heater, a heat conduction medium, a runner, or a combination thereof. A heat transfer medium such as brine or gas flows through the runners. In addition, the substrate support unit 11 may include a heat transfer gas supply unit for supplying a heat transfer gas between the back surface of the substrate W and the substrate support surface.

噴淋頭13用以將來自氣體供給部20之至少一種處理氣體導入電漿處理空間10s內。噴淋頭13具有至少一個氣體供給口13a、至少一個氣體擴散室13b、及複數氣體導入口13c。供給予氣體供給口13a之處理氣體通過氣體擴散室13b，由複數氣體導入口13c導入電漿處理空間10s內。又，噴淋頭13包含導電性構件。噴淋頭13之導電性構件具有上部電極之功能。此外，氣體導入部除了噴淋頭13外，還可包含安裝於形成在側壁10a之一個或複數個開口部的一個或複數個側邊氣體注入部(SGI：Side Gas Injector)。The shower head 13 is used to introduce at least one processing gas from the gas supply part 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b, and is introduced into the plasma processing space 10s through the plurality of gas introduction ports 13c. In addition, shower head 13 includes a conductive member. The conductive member of the shower head 13 functions as an upper electrode. In addition, in addition to the shower head 13, the gas introduction part may also include one or a plurality of side gas injectors (SGI: Side Gas Injector) installed in one or a plurality of openings formed in the side wall 10a.

氣體供給部20亦可包含一個以上之氣體源21及至少一個以上之流量控制器22。在一實施形態，氣體供給部20用以將一種以上之處理氣體，由各自對應之氣體源21，經由各自對應之流量控制器22，供給予噴淋頭13。各流量控制器22亦可包含例如質量流量控制器或壓力控制式流量控制器。再者，氣體供給部20亦可包含將一種以上之處理氣體的流量調變或脈衝化之一個以上的流量調變元件。The gas supply part 20 may also include more than one gas source 21 and at least one flow controller 22 . In one embodiment, the gas supply part 20 is used to supply more than one processing gas to the shower head 13 from the corresponding gas sources 21 through the corresponding flow controllers 22 . Each flow controller 22 may also include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include one or more flow regulating elements that regulate or pulse the flow of one or more processing gases.

排氣系統40可連接於設在例如電漿處理腔室10之底部的氣體排出口10e。排氣系統40亦可包含壓力調整閥及真空泵。以壓力調整閥，調整電漿處理空間10s內之壓力。真空泵亦可包含渦輪分子泵、乾式泵或此等之組合。The exhaust system 40 can be connected to the gas exhaust port 10 e provided at the bottom of the plasma processing chamber 10 , for example. The exhaust system 40 may also include a pressure regulating valve and a vacuum pump. Use the pressure regulator valve to adjust the pressure in the plasma treatment space within 10s. Vacuum pumps may also include turbomolecular pumps, dry pumps, or combinations thereof.

以下，除了圖2外，也參照圖3。圖3係概略地顯示一例示實施形態之電漿處理裝置的圖。基板支撐部11具有第1基台111a、第2基台111b及靜電吸盤113。第1基台111a及第2基台111b由如鋁這樣的導體形成。第1基台111a呈大約圓盤狀。第2基台111b呈大約環狀。第2基台111b在第1基台111a之徑向外側於周向延伸成包圍第1基台111a。介電體區域111c亦可介於第1基台111a與第2基台111b之間。In the following, FIG. 3 is also referred to in addition to FIG. 2 . Fig. 3 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment. The substrate support unit 11 has a first base 111 a, a second base 111 b, and an electrostatic chuck 113 . The first base 111a and the second base 111b are formed of a conductor such as aluminum. The first base 111a has an approximately disk shape. The second base 111b has a substantially ring shape. The second base 111b extends radially outward of the first base 111a in the circumferential direction so as to surround the first base 111a. The dielectric region 111c may also be interposed between the first base 111a and the second base 111b.

靜電吸盤113設於第1基台111a及第2基台111b上。基板支撐部11包含由靜電吸盤113之中央部及第1基台111a構成之第1區域11R1。基板W載置於第1區域11R1上且為靜電吸盤113上。基板支撐部11包含由靜電吸盤113之周緣部及第2基台111b構成之第2區域11R2。邊緣環ER載置於第2區域11R2上且為靜電吸盤113上。The electrostatic chuck 113 is provided on the first base 111a and the second base 111b. The substrate supporting part 11 includes a first region 11R1 constituted by the central part of the electrostatic chuck 113 and the first base 111a. The substrate W is placed on the first region 11R1 and is on the electrostatic chuck 113 . The substrate supporting part 11 includes a second region 11R2 constituted by the peripheral part of the electrostatic chuck 113 and the second base 111b. The edge ring ER is placed on the second region 11R2 and is on the electrostatic chuck 113 .

靜電吸盤113具有介電體部113d。介電體部113d由如氮化鋁、氧化鋁這樣的介電體形成。介電體部113d呈大約圓盤狀。第1區域11R1包含介電體部113d之中央部分。第2區域11R2包含介電體部113d之周緣部分。The electrostatic chuck 113 has a dielectric body portion 113d. The dielectric body portion 113d is formed of a dielectric body such as aluminum nitride or aluminum oxide. The dielectric body portion 113d has an approximately disk shape. The first region 11R1 includes the central portion of the dielectric body portion 113d. The second region 11R2 includes the peripheral portion of the dielectric body portion 113d.

靜電吸盤113更具有吸盤電極113a。吸盤電極113a係由導體形成之膜，設於第1區域11R1內且為介電體部113d之中。直流電源50p經由開關50s，電性連接於吸盤電極113a。當對吸盤電極113a施加來自直流電源50p之直流電壓時，會在基板W與靜電吸盤113之間產生靜電引力。藉產生之靜電引力，基板W被吸引至靜電吸盤113，而以靜電吸盤113固持。The electrostatic chuck 113 further has a chuck electrode 113a. The chuck electrode 113a is a film formed of a conductor, and is provided in the first region 11R1 and in the dielectric body portion 113d. The DC power source 50p is electrically connected to the chuck electrode 113a via the switch 50s. When a DC voltage from the DC power source 50p is applied to the chuck electrode 113a, an electrostatic attraction force is generated between the substrate W and the electrostatic chuck 113. By the generated electrostatic attraction, the substrate W is attracted to the electrostatic chuck 113 and held by the electrostatic chuck 113 .

靜電吸盤113亦可更具有吸盤電極113b及113c。吸盤電極113b及113c分別係由導體形成之膜。吸盤電極113b及113c亦可呈環狀。靜電吸盤113b及113c設於第2區域11R2內且為介電體部113d之中。直流電源51p經由開關51s電性連接於吸盤電極113b。直流電源52p經由開關52s電性連接於吸盤電極113c。當對吸盤電極113b施加來自直流電源51p之直流電壓，對吸盤電極113c施加來自直流電源52p之直流電壓時，會在邊緣環ER與靜電吸盤113之間產生靜電引力。藉產生之靜電引力，邊緣環ER被吸引至靜電吸盤113，而以靜電吸盤113固持。The electrostatic chuck 113 may further have chuck electrodes 113b and 113c. Each of the chuck electrodes 113b and 113c is a film formed of a conductor. The suction cup electrodes 113b and 113c may also be ring-shaped. The electrostatic chucks 113b and 113c are provided in the second region 11R2 and in the dielectric body portion 113d. The DC power source 51p is electrically connected to the chuck electrode 113b via the switch 51s. The DC power source 52p is electrically connected to the chuck electrode 113c via the switch 52s. When the DC voltage from the DC power source 51p is applied to the chuck electrode 113b and the DC voltage from the DC power source 52p is applied to the chuck electrode 113c, an electrostatic attraction force is generated between the edge ring ER and the electrostatic chuck 113 . By the generated electrostatic attraction, the edge ring ER is attracted to the electrostatic chuck 113 and held by the electrostatic chuck 113 .

電漿處理裝置1具備射頻電源31(第1射頻電源)、射頻電源32(第2射頻電源)、偏壓電源41(第1偏壓電源)、及偏壓電源42(第2偏壓電源)。The plasma processing apparatus 1 includes a radio frequency power source 31 (first radio frequency power source), a radio frequency power source 32 (second radio frequency power source), a bias power source 41 (first bias power source), and a bias power source 42 (second bias power source) .

射頻電源31用以產生射頻電力RF1(第1射頻電力)，以在腔室10內生成電漿。射頻電力RF1具有例如13MHz以上、150MHz以下之頻率。射頻電力RF1供給予基板支撐部11，俾使得經由基板支撐部11及基板W而在基板W上耦合於電漿。在圖3之實施形態，射頻電源31經由匹配器31m而電性連接於第1基台111a。匹配器31m包含匹配電路。匹配器31m之匹配電路具有可變阻抗。匹配器31m之匹配電路以後述控制部30控制。匹配器31m之匹配電路的阻抗調整成使射頻電源31之負載側的阻抗與射頻電源31之輸出阻抗匹配。The radio frequency power supply 31 is used to generate radio frequency power RF1 (first radio frequency power) to generate plasma in the chamber 10 . The radio frequency power RF1 has a frequency of, for example, not less than 13 MHz and not more than 150 MHz. The radio frequency power RF1 is supplied to the substrate supporting part 11 so as to be coupled to the plasma on the substrate W through the substrate supporting part 11 and the substrate W. FIG. In the embodiment shown in FIG. 3 , the radio frequency power supply 31 is electrically connected to the first base station 111 a via a matching device 31 m. The matching unit 31m includes a matching circuit. The matching circuit of the matching unit 31m has variable impedance. The matching circuit of the matching unit 31m is controlled by the control unit 30 described later. The impedance of the matching circuit of the matching unit 31m is adjusted so that the impedance of the load side of the RF power supply 31 matches the output impedance of the RF power supply 31 .

射頻電源32用以產生射頻電力RF2(第2射頻電力)，以在腔室10內生成電漿。射頻電力RF2與射頻電力RF1同樣地具有例如13MHz以上、150MHz以下之頻率。射頻電力RF2供給予基板支撐部11，俾使得經由基板支撐部11及邊緣環ER而在邊緣環ER上耦合於電漿。在圖3之實施形態，射頻電源32經由匹配器32m而電性連接於第2基台111b。匹配器32m包含匹配電路。匹配器32m之匹配電路具有可變阻抗。匹配器32m之匹配電路以控制部30控制。匹配器32m之匹配電路的阻抗調整成使射頻電源32之負載側的阻抗與射頻電源32之輸出阻抗匹配。The radio frequency power supply 32 is used to generate radio frequency power RF2 (second radio frequency power) to generate plasma in the chamber 10 . Like the radio frequency power RF1, the radio frequency power RF2 has a frequency of, for example, 13 MHz or more and 150 MHz or less. The radio frequency power RF2 is supplied to the substrate supporting part 11 so as to be coupled to the plasma on the edge ring ER via the substrate supporting part 11 and the edge ring ER. In the embodiment shown in FIG. 3 , the radio frequency power supply 32 is electrically connected to the second base station 111b via a matching device 32m. The matching unit 32m includes a matching circuit. The matching circuit of the matching unit 32m has variable impedance. The matching circuit of the matching unit 32m is controlled by the control unit 30 . The impedance of the matching circuit of the matching unit 32m is adjusted so that the impedance of the load side of the RF power supply 32 matches the output impedance of the RF power supply 32 .

偏壓電源41用以產生偏壓能量BE1(第1偏壓能量)。偏壓能量BE1經由基板支撐部11而供給予基板W。偏壓能量BE1供給予基板W，以調整由電漿供給予基板W之離子的能量。在圖3之實施形態中，偏壓電源41電性連接於第1基台111a。The bias power supply 41 is used to generate bias energy BE1 (first bias energy). The bias energy BE1 is supplied to the substrate W via the substrate supporting portion 11 . The bias energy BE1 is supplied to the substrate W to adjust the energy of ions supplied to the substrate W by the plasma. In the embodiment shown in FIG. 3 , the bias power supply 41 is electrically connected to the first base 111 a.

偏壓電源42用以產生偏壓能量BE2(第2偏壓能量)。偏壓能量BE2經由基板支撐部11而供給予邊緣環ER。偏壓能量BE2供給予邊緣環ER，以調整由電漿供給予邊緣環ER之離子的能量。在圖3之實施形態中，偏壓電源42電性連接於第2基台111b。The bias power supply 42 is used to generate bias energy BE2 (second bias energy). The bias energy BE2 is supplied to the edge ring ER via the substrate supporting portion 11 . The bias energy BE2 is supplied to the edge ring ER to adjust the energy of ions supplied to the edge ring ER by the plasma. In the embodiment shown in FIG. 3 , the bias power supply 42 is electrically connected to the second base 111b.

以下，將圖4與圖2及圖3一同參照。圖4係與一例示實施形態之電漿處理裝置相關的時序圖。於圖4顯示了偏壓能量BE1及偏壓能量BE2各自之波形(電壓波形)。又，於圖4顯示了偏壓能量BE1之位準L BE1及偏壓能量BE2之位準L BE2。又，於圖4顯示射頻電力RF1之功率位準P RF1及射頻電力RF2之功率位準P RF2。 Hereinafter, FIG. 4 is referred to together with FIG. 2 and FIG. 3 . Fig. 4 is a timing chart related to a plasma processing apparatus according to an exemplary embodiment. The respective waveforms (voltage waveforms) of the bias energy BE1 and the bias energy BE2 are shown in FIG. 4 . Moreover, the level L BE1 of the bias energy BE1 and the level L BE2 of the bias energy BE2 are shown in FIG. 4 . Moreover, the power level P RF1 of the radio frequency power RF1 and the power level P RF2 of the radio frequency power RF2 are shown in FIG. 4 .

偏壓能量BE1及偏壓能量BE2分別具備以具有偏壓頻率之倒數的時間長度之週期CY(波形週期)反覆出現的波形。偏壓頻率為例如100kHz以上、13.56MHz以下之頻率。Each of the bias energy BE1 and the bias energy BE2 has a waveform that repeatedly appears in a cycle CY (waveform cycle) having a time length that is the reciprocal of the bias frequency. The bias frequency is, for example, a frequency of not less than 100 kHz and not more than 13.56 MHz.

在一實施形態，偏壓能量BE1及偏壓能量BE2亦可分別為具有偏壓頻率之射頻電力、即射頻偏壓電力LF。射頻偏壓電力LF在週期CY(波形週期)、即偏壓週期，具有正弦波狀波形。週期CY具有偏壓頻率之倒數的時間長度。In one embodiment, the bias energy BE1 and the bias energy BE2 can also be radio frequency power with a bias frequency, ie radio frequency bias power LF. The radio frequency bias power LF has a sinusoidal waveform in a cycle CY (waveform cycle), that is, a bias cycle. The period CY has the time length of the reciprocal of the bias frequency.

偏壓能量BE1為射頻偏壓電力LF時，偏壓電源41經由匹配器41m而連接於第1基台111a。匹配器41m包含匹配電路。匹配器41m之匹配電路具有可變阻抗。匹配器41m之匹配電路以控制部30控制。匹配器41m之匹配電路的阻抗調整成使偏壓電源41之負載側的阻抗與偏壓電源41之輸出阻抗匹配。When the bias energy BE1 is the radio frequency bias power LF, the bias power supply 41 is connected to the first base 111a via the matching unit 41m. The matching unit 41m includes a matching circuit. The matching circuit of the matching unit 41m has variable impedance. The matching circuit of the matching unit 41m is controlled by the control unit 30 . The impedance of the matching circuit of the matching unit 41 m is adjusted so that the impedance on the load side of the bias power supply 41 matches the output impedance of the bias power supply 41 .

偏壓能量BE2為射頻偏壓電力LF時，偏壓電源42經由匹配器42m而連接於第2基台111b。匹配器42m包含匹配電路。匹配器42m之匹配電路具有可變阻抗。匹配器42m之匹配電路以控制部30控制。匹配器42m之匹配電路的阻抗調整成使偏壓電源42之負載側的阻抗與偏壓電源42之輸出阻抗匹配。When the bias energy BE2 is the radio frequency bias power LF, the bias power supply 42 is connected to the second base 111b via the matching unit 42m. The matching unit 42m includes a matching circuit. The matching circuit of the matching unit 42m has variable impedance. The matching circuit of the matching unit 42m is controlled by the control unit 30 . The impedance of the matching circuit of the matching unit 42 m is adjusted so that the impedance on the load side of the bias power supply 42 matches the output impedance of the bias power supply 42 .

在另一實施形態，偏壓能量BE1及偏壓能量BE2亦可分別為以具有偏壓頻率之倒數的時間長度之時間間隔(即，週期CY或波形週期)週期性地產生之電壓脈衝PV。使用作為偏壓能量BE1及偏壓能量BE2之電壓脈衝PV亦可為負的電壓脈衝，也可為負的直流電壓脈衝。電壓脈衝PV亦可具有三角波、矩形波這樣的任意波形。使用電壓脈衝作為偏壓能量BE1時，濾波器亦可取代匹配器41m來連接於偏壓電源41，俾阻斷射頻電力。又，使用電壓脈衝作為偏壓能量BE2時，濾波器亦可取代匹配器42m來連接於偏壓電源42，俾阻斷射頻電力。In another embodiment, the bias energy BE1 and the bias energy BE2 can also be voltage pulses PV periodically generated at time intervals (ie, cycle CY or waveform cycle) of the reciprocal of the bias frequency. The voltage pulse PV used as the bias energy BE1 and the bias energy BE2 may be a negative voltage pulse or a negative DC voltage pulse. The voltage pulse PV may have any waveform such as a triangular wave or a rectangular wave. When voltage pulses are used as the bias energy BE1 , the filter can also replace the matcher 41 m to be connected to the bias power supply 41 to block the radio frequency power. In addition, when voltage pulses are used as the bias energy BE2, a filter can replace the matcher 42m and be connected to the bias power supply 42 to block the radio frequency power.

週期CY(波形週期)包含第1期間T1及第2期間T2。在第1期間T1，偏壓能量BE1及偏壓能量BE2各自之電壓具有相對於在週期CY內之該電壓的平均值為正的位準。在第2期間T2，偏壓能量BE1及偏壓能量BE2各自之電壓具有相對於該平均值為負的位準。The cycle CY (waveform cycle) includes the first period T1 and the second period T2. In the first period T1, the respective voltages of the bias energy BE1 and the bias energy BE2 have positive levels with respect to the average value of the voltages in the period CY. In the second period T2, the respective voltages of the bias energy BE1 and the bias energy BE2 have negative levels with respect to the average value.

射頻電源31亦可在週期CY內使射頻電力RF1之頻率變化，以抑制來自射頻電力RF1之負載的反射。因此，週期CY分成複數相位期間。週期CY內之複數相位期間各自之射頻電力RF1的頻率使用預先準備之頻率的時間序列來設定。頻率之時間序列可由控制部30對射頻電源31指定。The radio frequency power supply 31 can also change the frequency of the radio frequency power RF1 within the cycle CY, so as to suppress the reflection from the load of the radio frequency power RF1. Therefore, the cycle CY is divided into complex phase periods. The frequency of the respective radio frequency power RF1 during the complex number of phases in the cycle CY is set using a pre-prepared time series of frequencies. The time series of frequencies can be designated by the control unit 30 to the radio frequency power supply 31 .

又，射頻電源32亦可在週期CY內使射頻電力RF2之頻率變化，以抑制來自射頻電力RF2之負載的反射。週期CY內之複數相位期間各自之射頻電力RF2的頻率使用預先準備之頻率的時間序列來設定。頻率之時間序列可由控制部30對射頻電源32指定。In addition, the radio frequency power supply 32 can also change the frequency of the radio frequency power RF2 within the cycle CY to suppress the reflection from the load of the radio frequency power RF2. The frequency of the respective radio frequency power RF2 during the complex number of phases in the cycle CY is set using a time series of frequencies prepared in advance. The time series of frequencies can be designated by the control unit 30 to the radio frequency power supply 32 .

控制部30用以控制射頻電源31、射頻電源32、偏壓電源41、及偏壓電源42。控制部30可由CPU這樣的處理器構成。此外，控制部2亦可兼作控制部30。The control unit 30 is used to control the RF power 31 , the RF power 32 , the bias power 41 , and the bias power 42 . The control unit 30 can be constituted by a processor such as a CPU. In addition, the control unit 2 may also serve as the control unit 30 .

以下，將圖5(a)及圖5(b)與圖2~圖4一同參照。圖5(a)係顯示邊緣環之厚度大於預定值時的鞘層之上端位置的圖，圖5(b)係顯示邊緣環之厚度小於預定值時之鞘層的上端位置之圖。Hereinafter, FIG. 5( a ) and FIG. 5( b ) are referred to together with FIGS. 2 to 4 . Fig. 5 (a) is a figure showing the position of the upper end of the sheath when the thickness of the edge ring is greater than a predetermined value, and Fig. 5 (b) is a figure showing the position of the upper end of the sheath when the thickness of the edge ring is less than a predetermined value.

如圖5(a)及圖5(b)所示，在第1期間T1，鞘層之厚度小，第1期間T1之鞘層的上端SH T1的位置低。另一方面，在第2期間T2，鞘層之厚度大，第2期間T2之鞘層的上端SH T2之位置高。此外，鞘層之上端的位置(即，鞘層之上端位置)係鞘層與電漿的界面之高度方向的位置。 As shown in FIG. 5(a) and FIG. 5(b), in the first period T1, the thickness of the sheath is small, and the position of the upper end SH T1 of the sheath in the first period T1 is low. On the other hand, in the second period T2, the thickness of the sheath is large, and the position of the upper end SH T2 of the sheath is high in the second period T2. In addition, the position of the upper end of the sheath (ie, the position of the upper end of the sheath) refers to the position in the height direction of the interface between the sheath and the plasma.

當邊緣環ER之厚度TH ER為預定值TH P時，例如邊緣環ER之頂面的高度方向之位置與基板W的頂面之高度方向的位置相等時，邊緣環ER上之鞘層的上端位置與基板W上的鞘層之上端位置相等。以下，將此時之偏壓能量BE2的位準L BE2稱為基準位準L REF2。又，將此時之射頻電力RF1的功率位準P RF1稱為基準功率位準P REF1。又，將此時之射頻電力RF2的功率位準P RF2稱為基準功率位置P REF2。 When the thickness TH ER of the edge ring ER is a predetermined value TH P , for example, when the height direction position of the top surface of the edge ring ER is equal to the height direction position of the top surface of the substrate W, the upper end of the sheath layer on the edge ring ER The position is equal to the upper end position of the sheath layer on the substrate W. Hereinafter, the level L BE2 of the bias energy BE2 at this time is referred to as the reference level L REF2 . Also, the power level P RF1 of the radio frequency power RF1 at this time is called a reference power level P REF1 . Also, the power level P RF2 of the radio frequency power RF2 at this time is called a reference power position P REF2 .

當邊緣環ER之厚度TH ER大於預定值TH P，位準L BE2為基準位準L REF2時，邊緣環ER上之鞘層的上端位置如在圖5(a)以虛線所示，高於基板W上之鞘層的上端位置。另一方面，當邊緣環ER之厚度TH ER小於預定值TH P，位準L BE2為基準位準L REF2時，邊緣環ER上之鞘層的上端位置如在圖5(b)以虛線所示，低於基板W上之鞘層的上端位置。 When the thickness TH ER of the edge ring ER is greater than the predetermined value TH P and the level L BE2 is the reference level L REF2 , the position of the upper end of the sheath on the edge ring ER is shown by the dotted line in Fig. 5(a), which is higher than The upper end position of the sheath on the substrate W. On the other hand, when the thickness TH ER of the edge ring ER is smaller than the predetermined value TH P and the level L BE2 is the reference level L REF2 , the position of the upper end of the sheath on the edge ring ER is shown by the dotted line in FIG. 5( b ). Shown, lower than the upper end of the sheath on the substrate W.

在電漿處理裝置1，為了在週期CY內，減低基板W上的鞘層之上端位置與邊緣環ER上之鞘層的上端位置之差，而調整偏壓能量BE2之位準L BE2。又，調整射頻電力RF1之功率位準P RF1及/或射頻電力RF2之功率位準P RF2。偏壓能量BE2之位準L BE2、以及射頻電力RF1之功率位準P RF1及射頻電力RF2之功率位準P RF2可由控制部30控制。 In the plasma processing apparatus 1, the level L BE2 of the bias energy BE2 is adjusted to reduce the difference between the upper end position of the sheath on the substrate W and the upper end of the sheath on the edge ring ER within the period CY. Moreover, the power level P RF1 of the radio frequency power RF1 and/or the power level P RF2 of the radio frequency power RF2 are adjusted. The level L BE2 of the bias energy BE2 , the power levels P RF1 of the radio frequency power RF1 and the power levels P RF2 of the radio frequency power RF2 can be controlled by the control unit 30 .

在第2期間T2，基板W上之鞘層的厚度及邊緣環ER上之鞘層的厚度主要以偏壓能量BE1之位準L BE1及偏壓能量BE2之位準L BE2決定。為了在第2期間T2，減低基板W上的鞘層之上端位置與邊緣環ER上之鞘層的上端位置之差，將偏壓能量BE2之位準L BE2設定成因應邊緣環ER之厚度TH ER的減少而增加。偏壓能量BE2之位準L BE2可由控制部30對偏壓電源42指定。 In the second period T2, the thickness of the sheath on the substrate W and the thickness of the sheath on the edge ring ER are mainly determined by the level L BE1 of the bias energy BE1 and the level L BE2 of the bias energy BE2. In order to reduce the difference between the upper end position of the sheath layer on the substrate W and the upper end position of the sheath layer on the edge ring ER during the second period T2, the level L BE2 of the bias energy BE2 is set to correspond to the thickness TH of the edge ring ER ER decreased and increased. The level L BE2 of the bias energy BE2 can be specified by the control unit 30 for the bias power supply 42 .

具體而言，當邊緣環ER之厚度TH ER大於預定值THp時，如圖4所示，位準L BE2設定成低於基準位準L REF2之位準。藉此，如在圖5(a)以實線所示，可減低基板W上之鞘層的上端SH T2之位置與邊緣環ER上之鞘層的上端SH T2之位置的差。此外，邊緣環ER之厚度TH ER亦可藉感測器以光學方式或電氣方式取得。或者，邊緣環ER之厚度TH ER亦可由邊緣環ER曝露於電漿之時間的長度而推定。 Specifically, when the thickness TH ER of the edge ring ER is greater than the predetermined value THp, as shown in FIG. 4 , the level L BE2 is set to be lower than the reference level L REF2 . Thereby, as shown by the solid line in FIG. 5( a ), the difference between the position of the upper end SH T2 of the sheath on the substrate W and the position of the upper end SH T2 of the sheath on the edge ring ER can be reduced. In addition, the thickness TH ER of the edge ring ER can also be obtained optically or electrically by a sensor. Alternatively, the thickness TH ER of the edge ring ER can also be estimated from the length of time the edge ring ER is exposed to the plasma.

另一方面，當邊緣環ER之厚度TH ER小於預定值TH P時，如圖4所示，位準L BE2設定成高於基準位準L REF2之位準。藉此，如在圖5(b)以實線所示，可減低基板W上之鞘層的上端SH T2之位置與邊緣環ER上之鞘層的上端SH T2之位置的差。 On the other hand, when the thickness TH ER of the edge ring ER is smaller than the predetermined value TH P , as shown in FIG. 4 , the level L BE2 is set to be higher than the reference level L REF2 . Thereby, as shown by the solid line in FIG. 5( b ), the difference between the position of the upper end SH T2 of the sheath on the substrate W and the position of the upper end SH T2 of the sheath on the edge ring ER can be reduced.

此外，偏壓能量BE1之位準L BE1越高，基板W之負偏壓電位的絕對值會越大，而在基板W上之鞘層的厚度會越大。又，偏壓能量BE2之位準L BE2越高，邊緣環ER之負偏壓電位的絕對值會越大，而在邊緣環ER上之鞘層的厚度會越大。若偏壓能量BE1為射頻偏壓電力LF，位準L BE1即為偏壓能量BE1之功率位準。若偏壓能量BE2為射頻偏壓電力LF，位準L BE2即為偏壓能量BE2之功率位準。若偏壓能量BE1為電壓脈衝PV，位準L BE1會隨著電壓脈衝PV往電壓位準之負方向的增加而增高。又，若偏壓能量BE2為電壓脈衝PV，位準L BE2會隨著電壓脈衝PV往電壓位準之負方向的增加而增高。 In addition, the higher the level L BE1 of the bias energy BE1 is, the greater the absolute value of the negative bias potential of the substrate W will be, and the thickness of the sheath layer on the substrate W will be greater. Moreover, the higher the level L BE2 of the bias energy BE2 is, the greater the absolute value of the negative bias potential of the edge ring ER will be, and the thickness of the sheath on the edge ring ER will be greater. If the bias energy BE1 is the RF bias power LF, the level L BE1 is the power level of the bias energy BE1. If the bias energy BE2 is the RF bias power LF, the level L BE2 is the power level of the bias energy BE2. If the bias energy BE1 is a voltage pulse PV, the level L BE1 will increase as the voltage pulse PV increases toward the negative direction of the voltage level. Moreover, if the bias energy BE2 is the voltage pulse PV, the level L BE2 will increase as the voltage pulse PV increases toward the negative direction of the voltage level.

在第1期間T1，基板W上之鞘層的厚度及邊緣環ER上之鞘層的厚度主要以射頻電力RF1之功率位準P RF1及射頻電力RF2之功率位準P RF2決定。在電漿處理裝置1，將第1期間T1之功率位準P RF1或功率位準P RF2設定成：在第1期間T1，使基板W上之鞘層的上端位置與邊緣環ER上之鞘層的上端位置之間的差縮小。功率位準P RF1及功率位準P RF2分別由控制部30對射頻電源31及射頻電源32指定。 In the first period T1, the thickness of the sheath on the substrate W and the sheath on the edge ring ER are mainly determined by the power level P RF1 of the radio frequency power RF1 and the power level P RF2 of the radio frequency power RF2 . In the plasma processing apparatus 1, the power level P RF1 or the power level P RF2 of the first period T1 is set such that, in the first period T1, the position of the upper end of the sheath on the substrate W is aligned with the position of the sheath on the edge ring ER. The difference between the upper end positions of the layers is reduced. The power level P RF1 and the power level P RF2 are designated by the control unit 30 for the RF power source 31 and the RF power source 32 respectively.

在電漿處理裝置1，為了在週期CY內調整功率位準P RF1及功率位準P RF2，射頻電源31、射頻電源32、偏壓電源41及偏壓電源42使用同步信號，彼此同步。同步信號亦可由射頻電源31、射頻電源32、偏壓電源41及偏壓電源42中之一個，發送至其他電源。或者，同步信號亦可由控制部30發送至射頻電源31、射頻電源32、偏壓電源41及偏壓電源42。同步信號亦可從「以電壓感測器41v測定之偏壓能量BE1的電壓」、或「以電壓感測器42v測定之偏壓能量BE2的電壓」，由控制部30生成。 In the plasma processing apparatus 1, in order to adjust the power level P RF1 and the power level P RF2 in the cycle CY, the radio frequency power supply 31, the radio frequency power supply 32, the bias power supply 41 and the bias power supply 42 are synchronized with each other using a synchronization signal. The synchronization signal can also be sent from one of the RF power supply 31 , the RF power supply 32 , the bias power supply 41 and the bias voltage power supply 42 to other power supplies. Alternatively, the synchronization signal can also be sent from the control unit 30 to the RF power supply 31 , the RF power supply 32 , the bias power supply 41 and the bias power supply 42 . The synchronization signal can also be generated by the control unit 30 from "the voltage of the bias energy BE1 measured by the voltage sensor 41v" or "the voltage of the bias energy BE2 measured by the voltage sensor 42v".

又，第1期間T1及第2期間T2亦可由控制部30從「以電壓感測器41v測定之偏壓能量BE1的電壓」或「以電壓感測器42v測定之偏壓能量BE2的電壓」而特定出。或者，第1期間T1及第2期間T2亦可分別以具有預定之時間長度的週期CY內之期間設定。In addition, the first period T1 and the second period T2 can also be determined by the control unit 30 from "the voltage of the bias energy BE1 measured by the voltage sensor 41v" or "the voltage of the bias energy BE2 measured by the voltage sensor 42v". And specific out. Alternatively, each of the first period T1 and the second period T2 may be set as a period within a cycle CY having a predetermined time length.

以下，就有關於週期CY之功率位準P RF1及功率位準P RF2之調整的第1~第4例作說明。 Hereinafter, the first to fourth examples of the adjustment of the power level P RF1 and the power level P RF2 of the cycle CY will be described.

[第1例][1st case]

在第1例，邊緣環ER之厚度TH ER大於預定值TH P時，如圖4所示，第1期間T1之功率位準P RF2設定成低於基準功率位準P REF2之功率位準。藉此，如在圖5(a)以實線所示，可減低基板W上之鞘層的上端SH T1之位置與邊緣環ER上之鞘層的上端SH T1之位置的差。又，邊緣環ER之厚度TH ER大於預定值TH P時，如圖4所示，第2期間T2之功率位準P RF2亦可設定成高於基準功率位準P REF2之功率位準。藉此，在第1期間T1減少之功率位準P RF2在第2期間T2被補償，而將週期CY之平均的電漿密度維持在一定之密度。 In the first example, when the thickness TH ER of the edge ring ER is greater than the predetermined value TH P , as shown in FIG. 4 , the power level P RF2 of the first period T1 is set to be lower than the reference power level P REF2 . Thereby, as shown by the solid line in FIG. 5( a ), the difference between the position of the upper end SHT1 of the sheath on the substrate W and the position of the upper end SHT1 of the sheath on the edge ring ER can be reduced. Moreover, when the thickness TH ER of the edge ring ER is greater than the predetermined value TH P , as shown in FIG. 4 , the power level P RF2 of the second period T2 can also be set to be higher than the reference power level P REF2 . Thereby, the power level P RF2 decreased in the first period T1 is compensated in the second period T2, and the average plasma density of the cycle CY is maintained at a constant density.

[第2例][2nd case]

在第2例，邊緣環ER之厚度TH ER大於預定值TH P時，如圖4所示，第1期間T1之功率位準P RF1設定成高於基準功率位準P REF1之功率位準。藉此，可減低基板W上之鞘層的上端SH T1之位置與邊緣環ER上之鞘層的上端SH T1之位置的差。又，邊緣環ER之厚度TH ER大於預定值TH P時，如圖4所示，第2期間T2之功率位準P RF1亦可設定成低於基準功率位準P REF1之功率位準。藉此，將週期CY之平均的功率位準P RF1維持在一定之功率位準，而將週期CY之平均的電漿密度維持在一定之密度。 In the second example, when the thickness TH ER of the edge ring ER is greater than the predetermined value TH P , as shown in FIG. 4 , the power level P RF1 in the first period T1 is set to be higher than the reference power level P REF1 . Thereby, the difference between the position of the upper end SHT1 of the sheath on the substrate W and the position of the upper end SHT1 of the sheath on the edge ring ER can be reduced. Also, when the thickness TH ER of the edge ring ER is greater than the predetermined value TH P , as shown in FIG. 4 , the power level P RF1 in the second period T2 can also be set to be lower than the reference power level P REF1 . Thereby, the average power level P RF1 of the cycle CY is maintained at a certain power level, and the average plasma density of the cycle CY is maintained at a certain density.

[第3例][3rd case]

在第3例，邊緣環ER之厚度TH ER小於預定值TH P時，如圖4所示，第1期間T1之功率位準P RF2設定成高於基準功率位準P REF2之功率位準。藉此，如在圖5(b)以實線所示，可減低基板W上之鞘層的上端SH T1之位置與邊緣環ER上之鞘層的上端SH T1之位置的差。又，邊緣環ER之厚度TH ER小於預定值TH P時，如圖4所示，第2期間T2之功率位準P RF2亦可設定成低於基準功率位準P REF2之功率位準。藉此，將週期CY之平均的功率位準P RF2維持在一定之功率位準，而將週期CY之平均的電漿密度維持在一定之密度。 In the third example, when the thickness TH ER of the edge ring ER is smaller than the predetermined value TH P , as shown in FIG. 4 , the power level P RF2 in the first period T1 is set to be higher than the reference power level P REF2 . Thereby, as shown by the solid line in FIG. 5( b ), the difference between the position of the upper end SHT1 of the sheath on the substrate W and the position of the upper end SHT1 of the sheath on the edge ring ER can be reduced. Also, when the thickness TH ER of the edge ring ER is smaller than the predetermined value TH P , as shown in FIG. 4 , the power level P RF2 in the second period T2 can also be set to be lower than the reference power level P REF2 . Thereby, the average power level P RF2 of the period CY is maintained at a certain power level, and the average plasma density of the period CY is maintained at a certain density.

[第4例][4th case]

在第4例，邊緣環ER之厚度TH ER小於預定值TH P時，如圖4所示，第1期間T1之功率位準P RF1設定成低於基準功率位準P REF1之功率位準。藉此，可減低基板W上之鞘層的上端SH T1之位置與邊緣環ER上之鞘層的上端SH T1之位置的差。又，邊緣環ER之厚度TH ER小於預定值TH P時，如圖4所示，第2期間T2之功率位準P RF1亦可設定成高於基準功率位準P REF1之功率位準。藉此，在第1期間T1減少之功率位準P RF1在第2期間T2被補償，而將週期CY之平均的電漿密度維持在一定之密度。 In the fourth example, when the thickness TH ER of the edge ring ER is smaller than the predetermined value TH P , as shown in FIG. 4 , the power level P RF1 of the first period T1 is set to be lower than the reference power level P REF1 . Thereby, the difference between the position of the upper end SHT1 of the sheath on the substrate W and the position of the upper end SHT1 of the sheath on the edge ring ER can be reduced. Also, when the thickness TH ER of the edge ring ER is smaller than the predetermined value TH P , as shown in FIG. 4 , the power level P RF1 in the second period T2 can also be set to be higher than the reference power level P REF1 . Thereby, the power level P RF1 decreased in the first period T1 is compensated in the second period T2, and the average plasma density of the cycle CY is maintained at a constant density.

在以上所說明之電漿處理裝置1，藉調整第2偏壓能量之位準，在週期CY內之第2期間，可使基板W上之鞘層的上端位置與邊緣環ER上之鞘層的上端位置之間的差縮小。又，在第1期間T1，將射頻電力RF1之功率位準P RF1或射頻電力RF2之功率位準P RF2設定成使基板W上之鞘層的上端位置與邊緣環ER上之鞘層的上端位置之間的差縮小。因而，在第1期間T1，可使基板W上之鞘層的上端位置與邊緣環ER上之鞘層的上端位置之間的差縮小。是故，根據電漿處理裝置1，在供給予邊緣環ER偏壓能量BE2的週期CY內，可使基板W上之鞘層的上端位置與邊緣環ER上之鞘層的上端位置之間的差縮小。 In the plasma processing apparatus 1 described above, by adjusting the level of the second bias energy, the position of the upper end of the sheath on the substrate W and the sheath on the edge ring ER can be aligned during the second period of the cycle CY. The difference between the upper end positions of the . Also, in the first period T1, the power level P RF1 of the radio frequency power RF1 or the power level P RF2 of the radio frequency power RF2 is set so that the position of the upper end of the sheath on the substrate W and the upper end of the sheath on the edge ring ER The difference between the positions is reduced. Therefore, in the first period T1, the difference between the upper end position of the sheath on the substrate W and the upper end position of the sheath on the edge ring ER can be reduced. Therefore, according to the plasma processing apparatus 1, the distance between the upper end position of the sheath on the substrate W and the upper end position of the sheath on the edge ring ER can be made within the period CY of the bias energy BE2 supplied to the edge ring ER. The difference narrowed.

以下，參照圖6~圖14，就數個其他之例示實施形態的電漿處理裝置作說明。圖6係概略地顯示其他之例示實施形態的電漿處理裝置之圖。以下，就圖6所示之電漿處理裝置1B相對於電漿處理裝置1之不同點作說明。Hereinafter, referring to FIGS. 6 to 14 , several other exemplary embodiments of plasma processing apparatuses will be described. Fig. 6 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. The difference between the plasma processing apparatus 1B shown in FIG. 6 and the plasma processing apparatus 1 will be described below.

電漿處理裝置1B具有基台111取代第1基台111a及第2基台111b。基台111呈大約圓盤形狀，由如鋁這樣的導體形成。靜電吸盤113設於基台111上。在電漿處理裝置1B，射頻電源31及偏壓電源41電性連接於基台111。射頻電源32及偏壓電源42電性連接於邊緣環ER。電漿處理裝置1B之其他結構與電漿處理裝置1之對應的結構相同。又，電漿處理裝置1B之各部的動作與電漿處理裝置1之對應的部分之動作相同。The plasma processing apparatus 1B has a base 111 instead of the first base 111a and the second base 111b. The base 111 has an approximately disk shape and is formed of a conductor such as aluminum. The electrostatic chuck 113 is disposed on the base 111 . In the plasma processing apparatus 1B, the radio frequency power supply 31 and the bias power supply 41 are electrically connected to the base 111 . The RF power 32 and the bias power 42 are electrically connected to the edge ring ER. Other structures of the plasma processing device 1B are the same as those of the plasma processing device 1 . In addition, the operation of each part of the plasma processing apparatus 1B is the same as that of the corresponding portion of the plasma processing apparatus 1 .

圖7係概略地顯示又另一例示實施形態之電漿處理裝置的圖。以下，就圖7所示之電漿處理裝置1C相對於電漿處理裝置1B之不同點作說明。Fig. 7 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Hereinafter, differences between the plasma processing apparatus 1C shown in FIG. 7 and the plasma processing apparatus 1B will be described.

電漿處理裝置1C包含設置成包圍基台111之絕緣部115。絕緣部115由如石英這樣的絕緣體形成。邊緣環ER之周緣部分載置於絕緣部115上。於絕緣部115 中設有電極117。電極117亦可於周向延伸，也可呈環狀。電極117配置於邊緣環ER之周緣部的下方。在電漿處理裝置1C，射頻電源32及偏壓電源42電性連接於電極117。電極處理裝置1C之其他結構與電漿處理裝置1B之對應的結構相同。又，電漿處理裝置1C之各部的動作與電漿處理裝置1B之對應的部分之動作相同。The plasma processing apparatus 1C includes an insulating portion 115 provided to surround the base 111 . The insulating portion 115 is formed of an insulator such as quartz. The peripheral portion of the edge ring ER is placed on the insulating portion 115 . An electrode 117 is provided in the insulating part 115 . The electrodes 117 can also extend in the circumferential direction, and can also be ring-shaped. The electrode 117 is arranged below the peripheral portion of the edge ring ER. In the plasma processing apparatus 1C, the radio frequency power source 32 and the bias power source 42 are electrically connected to the electrode 117 . The other structures of the electrode processing apparatus 1C are the same as the corresponding structures of the plasma processing apparatus 1B. In addition, the operation of each part of the plasma processing apparatus 1C is the same as that of the corresponding portion of the plasma processing apparatus 1B.

圖8係概略地顯示又另一例示實施形態之電漿處理裝置的圖。以下，就圖8所示之電漿處理裝置1D相對於電漿處理裝置1B之不同點作說明。Fig. 8 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Hereinafter, differences between the plasma processing apparatus 1D shown in FIG. 8 and the plasma processing apparatus 1B will be described.

在電漿處理裝置1D，電極113h設於第2區域11R2內且為靜電吸盤113之介電體部113d之中。電極113h係由導體形成之膜。電極113h亦可於周向延伸，也可呈環狀。電極113h亦可設於吸盤電極113b及113c各自與介電體部113d的底面之間。在電漿處理裝置1D，射頻電源32及偏壓電源42電性連接於電極113h。電漿處理裝置1D之其他結構與電漿處理裝置1B之對應的結構相同。又，電漿處理裝置1D之各部的動作與電漿處理裝置1B之對應的部分之動作相同。In the plasma processing apparatus 1D, the electrode 113h is provided in the second region 11R2 and is in the dielectric body portion 113d of the electrostatic chuck 113 . The electrode 113h is a film formed of a conductor. The electrode 113h can also extend in the circumferential direction, and can also be in the shape of a ring. The electrode 113h may also be disposed between each of the chuck electrodes 113b and 113c and the bottom surface of the dielectric body portion 113d. In the plasma processing apparatus 1D, the radio frequency power source 32 and the bias power source 42 are electrically connected to the electrode 113h. The other structures of the plasma processing device 1D are the same as the corresponding structures of the plasma processing device 1B. In addition, the operation of each part of the plasma processing apparatus 1D is the same as that of the corresponding portion of the plasma processing apparatus 1B.

圖9係概略地顯示又另一例示實施形態之電漿處理裝置的圖。以下，就圖9所示之電漿處理裝置1E相對於電漿處理裝置1D之不同點作說明。Fig. 9 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. The difference between the plasma processing apparatus 1E shown in FIG. 9 and the plasma processing apparatus 1D will be described below.

在電漿處理裝置1E，電極113g設於第1區域11R1內且為靜電吸盤113之介電體部113d之中。電極113g係由導體形成之膜。電極113g亦可呈圓形。電極113g亦可設於吸盤電極113a與介電體部113d的底面之間。在電漿處理裝置1E，射頻電源31及偏壓電源41電性連接於電極113g。電漿處理裝置1E之其他結構與電漿處理裝置1D之對應的結構相同。又，電漿處理裝置1E之各部的動作與電漿處理裝置1D之對應的部分相同。此外，在電漿處理裝置1E中，基台111亦可由導體、介電體、半導體任一個形成。In the plasma processing apparatus 1E, the electrode 113g is provided in the first region 11R1 and is in the dielectric body portion 113d of the electrostatic chuck 113 . The electrode 113g is a film formed of a conductor. The electrode 113g can also be circular. The electrode 113g may also be disposed between the chuck electrode 113a and the bottom surface of the dielectric part 113d. In the plasma processing apparatus 1E, the radio frequency power source 31 and the bias power source 41 are electrically connected to the electrode 113g. The other structures of the plasma processing device 1E are the same as the corresponding structures of the plasma processing device 1D. In addition, the operation of each part of the plasma processing apparatus 1E is the same as that of the corresponding portion of the plasma processing apparatus 1D. In addition, in the plasma processing apparatus 1E, the base 111 may also be formed of any one of conductors, dielectrics, and semiconductors.

圖10係概略地顯示又另一例示實施形態之電漿處理裝置的圖。以下，就圖10所示之電漿處理裝置1F相對於電漿處理裝置1E之不同點作說明。Fig. 10 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. The difference between the plasma processing apparatus 1F shown in FIG. 10 and the plasma processing apparatus 1E will be described below.

在電漿處理裝置1F，電極113n設於第2區域11R2內且為靜電吸盤113之介電體部113d之中。電極113n係由導體形成之膜。電極113n亦可於周向延伸，也可呈環狀。電極113n亦可設於電極113h與介電體部113d的底面之間。在電漿處理裝置1F，射頻電源32電性連接於電極113n。電漿處理裝置1F之其他結構與電漿處理裝置1E之對應的結構相同。又，電漿處理裝置1F之各部的動作與電漿處理裝置1E之對應的部分之動作相同。In the plasma processing apparatus 1F, the electrode 113n is provided in the second region 11R2 and is in the dielectric body portion 113d of the electrostatic chuck 113 . The electrode 113n is a film formed of a conductor. The electrodes 113n can also extend in the circumferential direction, and can also be in the shape of a ring. The electrode 113n may also be provided between the electrode 113h and the bottom surface of the dielectric part 113d. In the plasma processing device 1F, the radio frequency power source 32 is electrically connected to the electrode 113n. The other structures of the plasma processing apparatus 1F are the same as the corresponding structures of the plasma processing apparatus 1E. In addition, the operation of each part of the plasma processing apparatus 1F is the same as that of the corresponding portion of the plasma processing apparatus 1E.

圖11係概略地顯示又另一例示實施形態之電漿處理裝置的圖。以下，就圖11所示之電漿處理裝置1G相對於電漿處理裝置1F之不同點作說明。Fig. 11 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Hereinafter, differences between the plasma processing apparatus 1G shown in FIG. 11 and the plasma processing apparatus 1F will be described.

在電漿處理裝置1G，電極113m設於第1區域11R1內且為靜電吸盤113之介電體部113d之中。電極113m係由導體形成之膜。電極113m亦可呈圓形。電極113m亦可設於電極113g與介電體部113d的底面之間。在電漿處理裝置1G，射頻電源31電性連接於電極113m。電漿處理裝置1G之其他結構與電漿處理裝置1F之對應的結構相同。又，電漿處理裝置1G之各部的動作與電漿處理裝置1F之對應的部分相同。此外，在電漿處理裝置1G，基台111亦可由導體、介電體、半導體任一個形成。In the plasma processing apparatus 1G, the electrode 113m is provided in the first region 11R1 and is in the dielectric body portion 113d of the electrostatic chuck 113 . The electrode 113m is a film formed of a conductor. The electrode 113m may also be circular. The electrode 113m may also be provided between the electrode 113g and the bottom surface of the dielectric part 113d. In the plasma processing apparatus 1G, the radio frequency power supply 31 is electrically connected to the electrode 113m. Other structures of the plasma processing apparatus 1G are the same as the corresponding structures of the plasma processing apparatus 1F. In addition, the operation of each part of the plasma processing apparatus 1G is the same as that of the corresponding portion of the plasma processing apparatus 1F. In addition, in the plasma processing apparatus 1G, the base 111 may be formed of any one of conductors, dielectrics, and semiconductors.

圖12係概略地顯示又另一例示實施形態之電漿處理裝置的圖。以下，就圖12所示之電漿處理裝置1H相對於電漿處理裝置1E之不同點作說明。Fig. 12 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. The difference between the plasma processing apparatus 1H shown in FIG. 12 and the plasma processing apparatus 1E will be described below.

電漿處理裝置1H不具電極113h。射頻電源32及偏壓電源42電性連接於基台111。在電漿處理裝置1H，使用有關於週期CY之功率位準P RF1及功率位準P RF2之調整的上述第2例及第4例。電漿處理裝置1H之其他結構與電漿處理裝置1E之對應的結構相同。又，電漿處理裝置1H之各部的其他動作與電漿處理裝置1E之對應的部分之動作相同。 The plasma processing device 1H does not have the electrode 113h. The RF power 32 and the bias power 42 are electrically connected to the base 111 . In the plasma processing apparatus 1H, the above-mentioned second example and fourth example regarding the adjustment of the power level P RF1 and the power level P RF2 of the cycle CY are used. The other structures of the plasma processing apparatus 1H are the same as the corresponding structures of the plasma processing apparatus 1E. In addition, the other operations of each part of the plasma processing apparatus 1H are the same as those of the corresponding portions of the plasma processing apparatus 1E.

圖13係概略地顯示又另一例示實施形態之電漿處理裝置的圖。以下，就圖13所示之電漿處理裝置1J相對於電漿處理裝置1G之不同點作說明。Fig. 13 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Hereinafter, differences between the plasma processing apparatus 1J shown in FIG. 13 and the plasma processing apparatus 1G will be described.

電漿處理裝置1J不具電極113n。射頻電源32電性連接於基台111。在電漿處理裝置1J，使用有關於週期CY之功率位準P RF1及功率位準P RF2之調整的上述第2例及第4例。電漿處理裝置1J之其他結構與電漿處理裝置1G之對應的結構相同。又，電漿處理裝置1J之各部的其他動作與電漿處理裝置1G之對應的部分之動作相同。 The plasma processing device 1J does not have the electrode 113n. The radio frequency power supply 32 is electrically connected to the base station 111 . In the plasma processing apparatus 1J, the above-mentioned second example and fourth example regarding the adjustment of the power level P RF1 and the power level P RF2 of the cycle CY are used. Other structures of the plasma processing apparatus 1J are the same as the corresponding structures of the plasma processing apparatus 1G. In addition, the other operations of each part of the plasma processing apparatus 1J are the same as those of the corresponding portions of the plasma processing apparatus 1G.

圖14係概略地顯示又另一例示實施形態之電漿處理裝置的圖。以下，就圖14所示之電漿處理裝置1K相對於電漿處理裝置1之不同點作說明。Fig. 14 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. The difference between the plasma processing apparatus 1K shown in FIG. 14 and the plasma processing apparatus 1 will be described below.

電漿處理裝置1K不具備射頻電源32及偏壓電源42。在電漿處理裝置1K，將以單一射頻電源31產生之射頻電力分成兩部分，而生成射頻電力RF1與射頻電力RF2。射頻電力RF1供給予第1基台111a，射頻電力RF2供給予第2基台111b。The plasma processing apparatus 1K does not include the radio frequency power supply 32 and the bias power supply 42 . In the plasma processing apparatus 1K, the radio frequency power generated by the single radio frequency power supply 31 is divided into two parts to generate radio frequency power RF1 and radio frequency power RF2. The radio frequency power RF1 is supplied to the first base station 111a, and the radio frequency power RF2 is supplied to the second base station 111b.

以單一射頻電源31產生之射頻電力分配成射頻電力RF1與射頻電力RF2之比率係以調整器31a調整。在電漿處理裝置1K，射頻電力RF1之功率位準P RF1及射頻電力RF2之功率位準P RF2係根據以調整器31a所行之分配比率調整而設定。此外，在電漿處理裝置1B~1K，亦可將以單一射頻電源31產生之射頻電力分成兩部分，而生成射頻電力RF1及射頻電力RF2。 The ratio of the RF power generated by the single RF power supply 31 into the RF power RF1 and the RF power RF2 is adjusted by the regulator 31a. In the plasma processing apparatus 1K, the power level P RF1 of the radio frequency power RF1 and the power level P RF2 of the radio frequency power RF2 are set according to the distribution ratio adjustment by the adjuster 31a. In addition, in the plasma processing devices 1B~1K, the radio frequency power generated by the single radio frequency power supply 31 can also be divided into two parts to generate radio frequency power RF1 and radio frequency power RF2.

如圖14所示，調整器31a亦可連接在將射頻電源31連接於第1基台111a之電氣路徑上的節點與第2基台111b之間。調整器31a亦可包含具有可變阻抗之電路。此電路亦可由各自包含固定電容器與開關元件之複數串聯電路之並聯構成。或者，調整器31a亦可為使由射頻電源31供給予第2基台111b之射頻電力衰減的衰減器。此外，調整器31a亦可連接於上述節點與第1基台111a之間。As shown in FIG. 14, the adjuster 31a may be connected between the node on the electrical path connecting the radio frequency power supply 31 to the first base station 111a and the second base station 111b. The adjuster 31a may also include a circuit with variable impedance. This circuit can also be constituted by a parallel connection of a plurality of series circuits each including a fixed capacitor and a switching element. Alternatively, the adjuster 31a may also be an attenuator for attenuating the radio frequency power supplied from the radio frequency power supply 31 to the second base station 111b. In addition, the adjuster 31a may also be connected between the node and the first base 111a.

又，在電漿處理裝置1K，將以單一偏壓電源41產生之偏壓能量分成兩部分，而生成偏壓能量BE1與偏壓能量BE2。偏壓能量BE1供給予第1基台111a，偏壓能量BE2供給予第2基台111b。Moreover, in the plasma processing apparatus 1K, the bias energy generated by the single bias power supply 41 is divided into two parts to generate bias energy BE1 and bias energy BE2. The bias energy BE1 is supplied to the first base 111a, and the bias energy BE2 is supplied to the second base 111b.

以單一偏壓電源41產生之偏壓能量分配成偏壓能量BE1與偏壓能量BE2之比率係以調整器41a調整。在電漿處理裝置1K，偏壓能量BE1之位準L BE1及偏壓能量BE2之位準L BE2係根據以調整器41a所行之分配比率調整而設定。此外，在電漿處理裝置1B~1K，亦可將以單一偏壓電源41產生之偏壓能量分成兩部分，而生成偏壓能量BE1及偏壓能量BE2。 The ratio of the bias energy generated by the single bias power supply 41 into the bias energy BE1 and the bias energy BE2 is adjusted by the regulator 41a. In the plasma processing apparatus 1K, the level L BE1 of the bias energy BE1 and the level L BE2 of the bias energy BE2 are set according to the distribution ratio adjustment performed by the adjuster 41a. In addition, in the plasma processing apparatuses 1B-1K, the bias energy generated by the single bias power supply 41 can also be divided into two parts to generate the bias energy BE1 and the bias energy BE2.

如圖14所示，調整器41a亦可連接在將偏壓電源41連接於第1基台111a之電氣路徑上的節點與第2基台111b之間。調整器41a亦可包含具有可變阻抗之電路。此電路亦可由各自包含固定電容器與開關元件之複數串聯電路之並聯構成。或者，調整器41a亦可為使由偏壓電源41供給予第2基台111b之偏壓能量衰減的衰減器。此外，調整器41a亦可連接於上述節點與第1基台111a之間。As shown in FIG. 14, the regulator 41a may be connected between the node on the electrical path connecting the bias power supply 41 to the first base 111a and the second base 111b. Regulator 41a may also include a circuit with variable impedance. This circuit can also be constituted by a parallel connection of a plurality of series circuits each including a fixed capacitor and a switching element. Alternatively, the adjuster 41a may be an attenuator for attenuating the bias energy supplied from the bias power supply 41 to the second base 111b. In addition, the regulator 41a may also be connected between the node and the first base station 111a.

圖15係概略地顯示又另一例示實施形態之電漿處理裝置的圖。以下，就圖15所示之電漿處理裝置1L相對於電漿處理裝置1之不同點作說明。Fig. 15 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Hereinafter, differences between the plasma processing apparatus 1L shown in FIG. 15 and the plasma processing apparatus 1 will be described.

在電漿處理裝置1L，靜電吸盤113於其中央部與周緣部之間包含區域113e。區域113e可將靜電吸盤113之中央部與周緣部電性分離。區域113e亦可由絕緣體形成。或者，區域113e亦可由不同於靜電吸盤113之中央部的介電體部113d之材料及靜電吸盤113之周緣部的介電體部113d之材料的介電體形成。區域113e亦可以熱噴塗形成。或者，區域113e亦可為空間。又，在電漿處理裝置1L，靜電吸盤113之中央部與周緣部亦可由相互不同之介電體形成。此外，在上述各種例示實施形態之電漿處理裝置各個，靜電吸盤113亦可於其中央部與周緣部之間包含區域113e。In the plasma processing apparatus 1L, the electrostatic chuck 113 includes a region 113e between the central portion and the peripheral portion. The region 113e can electrically separate the central portion and the peripheral portion of the electrostatic chuck 113 . The region 113e may also be formed of an insulator. Alternatively, the region 113e may also be formed of a dielectric body different from the material of the dielectric body portion 113d at the central portion of the electrostatic chuck 113 and the material of the dielectric body portion 113d at the peripheral portion of the electrostatic chuck 113 . The region 113e can also be formed by thermal spraying. Alternatively, the area 113e can also be a space. In addition, in the plasma processing apparatus 1L, the central portion and the peripheral portion of the electrostatic chuck 113 may be formed of different dielectric materials. In addition, in each of the plasma processing apparatuses of the various exemplary embodiments described above, the electrostatic chuck 113 may also include a region 113e between the central portion and the peripheral portion.

以下，參照圖16，就一例示實施形態之電漿處理方法作說明。圖16係一例示實施形態之電漿處理方法的流程圖。圖16所示之電漿處理方法(以下稱為「方法MT」)可使用上述各種例示實施形態之電漿處理裝置來進行。Hereinafter, referring to FIG. 16, a plasma treatment method according to an exemplary embodiment will be described. Fig. 16 is a flowchart illustrating the plasma treatment method of the embodiment. The plasma treatment method shown in FIG. 16 (hereinafter referred to as "method MT") can be performed using the plasma treatment apparatus of the various exemplary embodiments described above.

如圖16所示，方法MT在程序STa開始。在程序STa，將基板載置於基板支撐部11上。接著，在方法MT，同時進行程序STb與程序STc。在進行程序STb與程序STc之期間，從氣體供給部20將氣體供給至腔室10內。又，在進行程序STb與程序STc之期間，以排氣系統40將腔室10內之壓力減壓成指定之壓力。As shown in Fig. 16, the method MT starts at a routine STa. In step STa, the substrate is placed on the substrate support unit 11 . Next, in the method MT, the procedure STb and the procedure STc are performed simultaneously. The gas is supplied from the gas supply part 20 into the chamber 10 while the procedure STb and the procedure STc are being performed. Also, during the execution of the routine STb and the routine STc, the pressure in the chamber 10 is reduced to a predetermined pressure by the exhaust system 40 .

在程序STb，供給射頻電力RF1及射頻電力RF2，以由腔室10內之氣體生成電漿。在程序STc，對基板W供給偏壓能量BE1，對邊緣環ER供給偏壓能量BE2。在方法MT，在第1期間T1，將射頻電力RF1之功率位準P RF1或射頻電力RF2之功率位準P RF2設定成使基板W上之鞘層的上端位置與邊緣環ER上之鞘層的上端位置之間的差縮小。 In the step STb, the radio frequency power RF1 and the radio frequency power RF2 are supplied to generate plasma from the gas in the chamber 10 . In the routine STc, bias energy BE1 is supplied to the substrate W, and bias energy BE2 is supplied to the edge ring ER. In the method MT, during the first period T1, the power level P RF1 of the radio frequency power RF1 or the power level P RF2 of the radio frequency power RF2 is set so that the position of the upper end of the sheath on the substrate W and the sheath on the edge ring ER The difference between the upper end positions of the .

又，為了在週期CY內，減低基板W上之鞘層的上端位置與邊緣環ER上之鞘層的上端位置之間的差，亦可調整偏壓能量BE2之位準L BE2。又，亦可在第2期間T2，調整射頻電力RF1之功率位準P RF1及/或射頻電力RF2之功率位準P RF2。關於偏壓能量BE2之位準L BE2的調整以及射頻電力RF1之功率位準P RF1及/或射頻電力RF2之功率位準P RF2的調整，請參照有關於電漿處理裝置1之上述說明。 Furthermore, in order to reduce the difference between the upper end position of the sheath on the substrate W and the upper end of the sheath on the edge ring ER within the period CY, the level L BE2 of the bias energy BE2 can also be adjusted. Also, during the second period T2, the power level P RF1 of the radio frequency power RF1 and/or the power level P RF2 of the radio frequency power RF2 can be adjusted. For the adjustment of the level L BE2 of the bias energy BE2 and the adjustment of the power level P RF1 of the radio frequency power RF1 and/or the power level P RF2 of the radio frequency power RF2 , please refer to the above description about the plasma processing device 1 .

以上，就各種例示實施形態作了說明，亦可不限於上述例示實施形態，進行各種追加、省略、置換及變更。又，可組合不同之實施形態的要件，形成其他實施形態。As above, various exemplary embodiments have been described, and various additions, omissions, substitutions, and changes are possible without being limited to the above-described exemplary embodiments. In addition, elements of different embodiments can be combined to form other embodiments.

在此，將本發明所包含之各種例示實施形態記載為以下之[E1]~[E16]。Here, various exemplary embodiments included in the present invention are described in the following [E1] to [E16].

[E1] 一種電漿處理裝置，具備： 腔室； 基板支撐部，設於該腔室內，用以支撐基板及邊緣環； 至少一個射頻電源，用以產生經由該基板而在該基板之上方耦合於電漿的第1射頻電力及經由該邊緣環而在該邊緣環之上方耦合於電漿的第2射頻電力； 至少一個偏壓電源，用以產生供給予該基板之第1偏壓能量及供給予該邊緣環之第2偏壓能量； 該第1偏壓能量及該第2偏壓能量具備以具有偏壓頻率之倒數的時間長度之週期反覆出現的波形， 該週期包含第1期間及第2期間，該第1期間係該第1偏壓能量及該第2偏壓能量各自之電壓具有相對於該週期內之該電壓的平均值為正的位準，該第2期間係該第1偏壓能量及該第2偏壓能量各自之電壓具有相對於該平均值為負的位準， 在該第1期間，將該第1射頻電力之功率位準或該第2射頻電力之功率位準設定成使該基板上之鞘層的上端位置與該邊緣環上之鞘層的上端位置之間的差縮小。 [E1] A plasma treatment device, comprising: Chamber; a substrate supporting part is arranged in the chamber for supporting the substrate and the edge ring; at least one radio frequency power source for generating a first radio frequency power coupled to the plasma over the substrate via the substrate and a second radio frequency power coupled to the plasma over the edge ring via the edge ring; at least one bias power supply for generating a first bias energy for the substrate and a second bias energy for the edge ring; The first bias energy and the second bias energy have waveforms that repeatedly appear in a cycle having a time length that is the reciprocal of the bias frequency, The period includes a first period and a second period, the first period being that the respective voltages of the first bias energy and the second bias energy have a positive level relative to the average value of the voltage in the period, In the second period, the respective voltages of the first bias energy and the second bias energy have negative levels relative to the average value, During the first period, the power level of the first radio frequency power or the power level of the second radio frequency power is set so that the upper end position of the sheath on the substrate and the upper end position of the sheath on the edge ring The difference between is reduced.

在第2期間，基板上之鞘層的厚度及邊緣環上之鞘層的厚度主要以第1偏壓能量之位準及第2偏壓能量之位準決定。藉在第2期間，調整第2偏壓能量之位準，可使基板上之鞘層的上端位置與邊緣環上之鞘層的上端位置之間的差縮小。另一方面，基板上之鞘層的厚度及邊緣環上之鞘層的厚度在第1期間，主要以第1射頻電力之功率位準及第2射頻電力之功率位準決定。在[E1]之實施形態，在第1期間，將第1射頻電力之功率位準或第2射頻電力之功率位準設定成使基板上之鞘層的上端位置與邊緣環上之鞘層的上端位置之間的差縮小。因而，在第1期間，可使基板上之鞘層的上端位置與邊緣環上之鞘層的上端位置之間的差縮小。是故，根據[E1]之實施形態，在供給予邊緣環偏壓能量的週期內，可使基板上之鞘層的上端位置與邊緣環上之鞘層的上端位置之間的差縮小。In the second period, the thickness of the sheath on the substrate and the thickness of the sheath on the edge ring are mainly determined by the level of the first bias energy and the level of the second bias energy. By adjusting the level of the second bias energy during the second period, the difference between the upper end position of the sheath layer on the substrate and the upper end position of the sheath layer on the edge ring can be reduced. On the other hand, the thickness of the sheath layer on the substrate and the thickness of the sheath layer on the edge ring are mainly determined by the power level of the first radio frequency power and the power level of the second radio frequency power during the first period. In the embodiment of [E1], during the first period, the power level of the first radio frequency power or the power level of the second radio frequency power is set so that the position of the upper end of the sheath on the substrate and the position of the sheath on the edge ring The difference between the upper end positions is reduced. Therefore, in the first period, the difference between the upper end position of the sheath on the substrate and the upper end position of the sheath on the edge ring can be reduced. Therefore, according to the embodiment [E1], the difference between the upper end position of the sheath on the substrate and the upper end position of the sheath on the edge ring can be reduced during the cycle of supplying bias energy to the edge ring.

[E2] 如[E1]之電漿處理裝置，其中， 該第2偏壓能量之位準設定成因應該邊緣環之厚度的減少而增加。 [E2] Such as the plasma treatment device of [E1], wherein, The level of the second bias energy is set to increase as the thickness of the edge ring decreases.

[E3] 如[E2]之電漿處理裝置，其中， 該邊緣環之厚度大於預定值時、在該第1期間供給之該第2射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第1期間應設定之該第2射頻電力的基準功率位準低。 [E3] Such as the plasma treatment device of [E2], wherein, When the thickness of the edge ring is greater than a predetermined value, the power level of the second radio frequency power supplied during the first period is set to be higher than the power level that should be set during the first period when the thickness of the edge ring is the predetermined value. The reference power level of the second radio frequency power is low.

[E4] 如[E3]之電漿處理裝置，其中， 該邊緣環之厚度大於該預定值時、在該第2期間供給之該第2射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第2期間應設定之該第2射頻電力的基準功率位準高。 [E4] A plasma treatment device such as [E3], wherein, When the thickness of the edge ring is greater than the predetermined value, the power level of the second radio frequency power supplied during the second period is set to be higher than that which should be set during the second period when the thickness of the edge ring is the predetermined value The reference power level of the second radio frequency power is high.

[E5] 如[E2]之電漿處理裝置，其中， 該邊緣環之厚度大於預定值時、在該第1期間供給之該第1射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第1期間應設定之該第1射頻電力的基準功率位準高。 [E5] Such as the plasma treatment device of [E2], wherein, When the thickness of the edge ring is greater than a predetermined value, the power level of the first radio frequency power supplied during the first period is set to be higher than the power level that should be set during the first period when the thickness of the edge ring is the predetermined value. The reference power level of the first radio frequency power is high.

[E6] 如[E5]之電漿處理裝置，其中， 該邊緣環之厚度大於該預定值時、在該第2期間供給之該第1射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第2期間應設定之該第1射頻電力的基準功率位準低。 [E6] Such as the plasma treatment device of [E5], wherein, When the thickness of the edge ring is greater than the predetermined value, the power level of the first radio frequency power supplied during the second period is set to be higher than that which should be set during the second period when the thickness of the edge ring is the predetermined value The reference power level of the first radio frequency power is low.

[E7] 如[E2]之電漿處理裝置，其中， 該邊緣環之厚度小於預定值時、在該第1期間供給之該第2射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第1期間應設定之該第2射頻電力的基準功率位準高。 [E7] Such as the plasma treatment device of [E2], wherein, When the thickness of the edge ring is less than a predetermined value, the power level of the second radio frequency power supplied during the first period is set to be higher than the power level that should be set during the first period when the thickness of the edge ring is the predetermined value. The reference power level of the second radio frequency power is high.

[E8] 如[E7]之電漿處理裝置，其中， 該邊緣環之厚度小於該預定值時、在該第2期間供給之該第2射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第2期間應設定之該第2射頻電力的基準功率位準低。 [E8] Such as the plasma treatment device of [E7], wherein, When the thickness of the edge ring is less than the predetermined value, the power level of the second radio frequency power supplied during the second period is set to be higher than that which should be set during the second period when the thickness of the edge ring is the predetermined value The reference power level of the second radio frequency power is low.

[E9] 如[E2]之電漿處理裝置，其中， 該邊緣環之厚度小於預定值時、在該第1期間供給之該第1射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第1期間應設定之該第1射頻電力的基準功率位準低。 [E9] Such as the plasma treatment device of [E2], wherein, When the thickness of the edge ring is less than a predetermined value, the power level of the first radio frequency power supplied during the first period is set to be higher than the power level that should be set during the first period when the thickness of the edge ring is the predetermined value. The reference power level of the first radio frequency power is low.

[E10] 如[E9]之電漿處理裝置，其中， 該邊緣環之厚度小於該預定值時、在該第2期間供給之該第1射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第2期間應設定之該第1射頻電力的基準功率位準高。 [E10] Such as the plasma treatment device of [E9], wherein, When the thickness of the edge ring is less than the predetermined value, the power level of the first radio frequency power supplied during the second period is set to be higher than that which should be set during the second period when the thickness of the edge ring is the predetermined value The reference power level of the first radio frequency power is high.

[E11] 如[E1]~[E10]中任一項之電漿處理裝置，其中， 具備用以產生該第1射頻電力之第1射頻電源及用以產生該第2射頻電力之第2射頻電源，以作為該至少一個射頻電源。 [E11] The plasma treatment device according to any one of [E1]~[E10], wherein, A first radio frequency power source for generating the first radio frequency power and a second radio frequency power source for generating the second radio frequency power are provided as the at least one radio frequency power source.

[E12] 如[E1]至[E10]中任一項之電漿處理裝置，其中， 具備單一射頻電源作為該至少一個射頻電源， 更具備： 調整器，用以調整以該單一射頻電源產生之射頻電力分配成該第1射頻電力與該第2射頻電力之比率。 [E12] The plasma treatment device according to any one of [E1] to [E10], wherein, having a single radio frequency power source as the at least one radio frequency power source, More with: The regulator is used to adjust the distribution of the radio frequency power generated by the single radio frequency power source to the ratio of the first radio frequency power and the second radio frequency power.

[E13] 如[E1]至[E12]中任一項之電漿處理裝置，其中， 具備用以產生該第1偏壓能量之第1偏壓電源及用以產生該第2偏壓能量之第2偏壓電源，以作為該至少一個偏壓電源。 [E13] The plasma treatment device according to any one of [E1] to [E12], wherein, A first bias power supply for generating the first bias energy and a second bias power supply for generating the second bias energy are provided as the at least one bias power supply.

[E14] 如[E1]至[E12]中任一項之電漿處理裝置，其中， 具備單一偏壓電源作為該至少一個偏壓電源， 更具備： 調整器，用以調整以該單一射頻電源產生之偏壓能量分配成該第1偏壓能量與該第2偏壓能量之比率。 [E14] The plasma treatment device according to any one of [E1] to [E12], wherein, having a single bias power supply as the at least one bias power supply, More with: The adjuster is used to adjust the distribution of the bias energy generated by the single radio frequency power source into the ratio of the first bias energy and the second bias energy.

[E15] 如[E1]至[E14]中任一項之電漿處理裝置，其中， 該第1偏壓能量及該第2偏壓能量分別為射頻偏壓電力或以具有該偏壓頻率之倒數的時間長度之時間間隔週期性地產生之電壓脈衝。 [E15] The plasma treatment device according to any one of [E1] to [E14], wherein, The first bias energy and the second bias energy are respectively radio frequency bias power or voltage pulses periodically generated at time intervals having a time length that is the reciprocal of the bias frequency.

[E16] 一種電漿處理方法，包含下列程序： 在電漿處理裝置之腔室內將基板載置於基板支撐部上，於該基板支撐部上搭載有邊緣環； 供給經由該基板而在該基板之上方耦合於電漿的第1射頻電力及經由該邊緣環而在該邊緣環之上方耦合於電漿的第2射頻電力； 對該基板供給第1偏壓能量，對該邊緣環供給第2偏壓能量； 該第1偏壓能量及該第2偏壓能量具備以具有偏壓頻率之倒數的時間長度之週期反覆出現的波形， 該週期包含第1期間及第2期間，該第1期間係該第1偏壓能量及該第2偏壓能量各自之電壓具有相對於該週期內之該電壓的平均值為正的位準，該第2期間係該第1偏壓能量及該第2偏壓能量各自之電壓具有相對於該平均值為負的位準， 在該第1期間，將該第1射頻電力之功率位準或該第2射頻電力之功率位準設定成使該基板上之鞘層的上端位置與該邊緣環上之鞘層的上端位置之間的差縮小。 [E16] A plasma treatment method comprising the following procedures: In the chamber of the plasma processing device, the substrate is placed on the substrate supporting part, and the edge ring is mounted on the substrate supporting part; supplying first radio frequency power coupled to the plasma over the substrate through the substrate and second radio frequency power coupled to the plasma over the edge ring through the edge ring; supplying a first bias energy to the substrate, and supplying a second bias energy to the edge ring; The first bias energy and the second bias energy have waveforms that repeatedly appear in a cycle having a time length that is the reciprocal of the bias frequency, The period includes a first period and a second period, the first period being that the respective voltages of the first bias energy and the second bias energy have a positive level relative to the average value of the voltage in the period, In the second period, the respective voltages of the first bias energy and the second bias energy have negative levels relative to the average value, During the first period, the power level of the first radio frequency power or the power level of the second radio frequency power is set so that the upper end position of the sheath on the substrate and the upper end position of the sheath on the edge ring The difference between is reduced.

從以上之說明應可理解本發明之各種實施形態係為了說明而在本說明書說明，可在不脫離本發明之範圍及主旨下，進行各種變更。因而，本說明書所揭示之各種實施形態不意在限定，真正之範圍及主旨以附加之申請專利範圍顯示。From the above description, it should be understood that various embodiments of the present invention are described in this specification for the sake of illustration, and that various changes can be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limited, and the true scope and gist are shown by the appended claims.

1:電漿處理裝置 1B:電漿處理裝置 1C:電漿處理裝置 1D:電漿處理裝置 1E:電漿處理裝置 1F:電漿處理裝置 1G:電漿處理裝置 1H:電漿處理裝置 1J:電漿處理裝置 1K:電漿處理裝置 1L:電漿處理裝置 2:控制部 2a:電腦 2a1:處理部 2a2:記憶部 2a3:通信介面 10:腔室 10a:側壁 10e:氣體排出口 10s:電漿處理空間 11:基板支撐部 11R1:第1區域 11R2:第2區域 12:電漿生成部 13:噴淋頭 13a:氣體供給口 13b:氣體擴散室 20:氣體供給部 21:氣體源 22:流量控制器 30:控制部 31:射頻電源 31a:調整器 31m:匹配器 32:射頻電源 32m:匹配器 40:排氣系統 41:偏壓電源 41a:調整器 41m:匹配器 41v:電壓感測器 42:偏壓電源 42m:匹配器 42v:電壓感測器 50p:直流電源 50s:開關 51p:直流電源 51s:開關 52p:直流電源 52s:開關 111:基台 111a:第1基台 111b:第2基台 111c:介電體區域 113:靜電吸盤 113a:吸盤電極 113b:吸盤電極 113c:吸盤電極 113d:介電體部 113e:區域 113g:電極 113h:電極 113n:電極 115:絕緣部 117:電極 BE1:偏壓能量(第1偏壓能量) BE2:偏壓能量(第2偏壓能量) CY:週期 ER:邊緣環 L BE1:位準 L BE2:位準 L REF2:基準位準 LF:射頻偏壓電力 MT:方法 P RF1:功率位準 P RF2:功率位準 P REF1:基準功率位準 P REF2:基準功率位準 PV:電壓脈衝 RF1:射頻電力(第1射頻電力) RF2:射頻電力(第2射頻電力) STa:程序 STb:程序 STc:程序 SH T1:上端 SH T2:上端 T1:第1期間 T2:第2期間 TH ER:厚度 TH P:預定值 W:基板 1: Plasma treatment device 1B: Plasma treatment device 1C: Plasma treatment device 1D: Plasma treatment device 1E: Plasma treatment device 1F: Plasma treatment device 1G: Plasma treatment device 1H: Plasma treatment device 1J: Plasma processing device 1K: plasma processing device 1L: plasma processing device 2: control part 2a: computer 2a1: processing part 2a2: memory part 2a3: communication interface 10: chamber 10a: side wall 10e: gas outlet 10s: electric Plasma processing space 11: substrate support section 11R1: first area 11R2: second area 12: plasma generation section 13: shower head 13a: gas supply port 13b: gas diffusion chamber 20: gas supply section 21: gas source 22: Flow controller 30: Control part 31: RF power supply 31a: Regulator 31m: Matching device 32: RF power supply 32m: Matching device 40: Exhaust system 41: Bias power supply 41a: Regulator 41m: Matching device 41v: Voltage sensing Device 42: bias power supply 42m: matching device 42v: voltage sensor 50p: DC power supply 50s: switch 51p: DC power supply 51s: switch 52p: DC power supply 52s: switch 111: abutment 111a: first abutment 111b: first abutment 2 base 111c: dielectric body region 113: electrostatic chuck 113a: chuck electrode 113b: chuck electrode 113c: chuck electrode 113d: dielectric body part 113e: region 113g: electrode 113h: electrode 113n: electrode 115: insulating part 117: electrode BE1: Bias Energy (1st Bias Energy) BE2: Bias Energy (2nd Bias Energy) CY: Cycle ER: Edge Ring L BE1 : Level L BE2 : Level L REF2 : Reference Level LF: Radio Frequency Bias power MT: method P RF1 : power level P RF2 : power level P REF1 : reference power level P REF2 : reference power level PV: voltage pulse RF1: radio frequency power (first radio frequency power) RF2: radio frequency power (Second radio frequency power) STa: program STb: program STc: program SH T1 : upper end SH T2 : upper end T1: first period T2: second period TH ER : thickness TH P : predetermined value W: substrate

圖1係概略地顯示一例示實施形態之電漿處理裝置的圖。 圖2係概略地顯示一例示實施形態之電漿處理裝置的圖。 圖3係概略地顯示一例示實施形態之電漿處理裝置的圖。 圖4係與一例示實施形態之電漿處理裝置相關的時序圖。 圖5(a)係顯示邊緣環之厚度大於預定值時的鞘 層之上端位置的圖，圖5(b)係顯示邊緣環之厚度小於預定值時的鞘層之上端位置的圖。 圖6係概略地顯示另一例示實施形態之電漿處理裝置的圖。 圖7係概略地顯示又另一例示實施形態之電漿處理裝置的圖。 圖8係概略地顯示又另一例示實施形態之電漿處理裝置的圖。 圖9係概略地顯示又另一例示實施形態之電漿處理裝置的圖。 圖10係概略地顯示又另一例示實施形態之電漿處理裝置的圖。 圖11係概略地顯示又另一例示實施形態之電漿處理裝置的圖。 圖12係概略地顯示又另一例示實施形態之電漿處理裝置的圖。 圖13係概略地顯示又另一例示實施形態之電漿處理裝置的圖。 圖14係概略地顯示又另一例示實施形態之電漿處理裝置的圖。 圖15係概略地顯示又另一例示實施形態之電漿處理裝置的圖。 圖16係一例示實施形態之電漿處理方法的流程圖。 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment. Fig. 2 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment. Fig. 3 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment. Fig. 4 is a timing chart related to a plasma processing apparatus according to an exemplary embodiment. Fig. 5 (a) is a figure showing the position of the upper end of the sheath when the thickness of the edge ring is greater than a predetermined value, and Fig. 5 (b) is a figure showing the position of the upper end of the sheath when the thickness of the edge ring is less than a predetermined value. Fig. 6 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Fig. 7 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Fig. 8 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Fig. 9 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Fig. 10 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Fig. 11 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Fig. 12 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Fig. 13 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Fig. 14 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Fig. 15 is a diagram schematically showing a plasma processing apparatus according to yet another exemplary embodiment. Fig. 16 is a flowchart illustrating the plasma treatment method of the embodiment.

1:電漿處理裝置 1: Plasma treatment device

10:腔室 10: chamber

11:基板支撐部 11: Substrate support part

11R1:第1區域 11R1: Region 1

11R2:第2區域 11R2: Region 2

30:控制部 30: Control Department

31:射頻電源 31: RF power supply

31m:匹配器 31m: matcher

32:射頻電源 32: RF power supply

32m:匹配器 32m: matcher

41:偏壓電源 41: Bias power supply

41m:匹配器 41m: Matcher

41v:電壓感測器 41v: voltage sensor

42:偏壓電源 42: Bias power supply

42m:匹配器 42m: matcher

42v:電壓感測器 42v: voltage sensor

50p:直流電源 50p: DC power supply

50s:開關 50s: switch

51p:直流電源 51p: DC power supply

51s:開關 51s: switch

52p:直流電源 52p: DC power supply

52s:開關 52s: switch

111a:第1基台 111a: the first abutment

111b:第2基台 111b: the second abutment

111c:介電體區域 111c: Dielectric body region

113:靜電吸盤 113: Electrostatic chuck

113a:吸盤電極 113a: suction cup electrode

113b:吸盤電極 113b: suction cup electrode

113c:吸盤電極 113c: suction cup electrode

113d:介電體部 113d: Dielectric body

BE1:偏壓能量(第1偏壓能量) BE1: Bias energy (1st bias energy)

BE2:偏壓能量(第2偏壓能量) BE2: Bias Energy (Second Bias Energy)

ER:邊緣環 ER: Edge Ring

RF1:射頻電力(第1射頻電力) RF1: RF power (1st RF power)

RF2:射頻電力(第2射頻電力) RF2: RF power (2nd RF power)

W:基板 W: Substrate

Claims (16)

一種電漿處理裝置，具備： 腔室； 基板支撐部，設於該腔室內，用以支撐基板及邊緣環； 至少一個射頻電源，用以產生經由該基板而在該基板之上方耦合於電漿的第1射頻電力及經由該邊緣環而在該邊緣環之上方耦合於電漿的第2射頻電力； 至少一個偏壓電源，用以產生供給予該基板之第1偏壓能量及供給予該邊緣環之第2偏壓能量； 該第1偏壓能量及該第2偏壓能量具備以具有偏壓頻率之倒數的時間長度之週期反覆出現的波形， 該週期包含第1期間及第2期間，該第1期間係該第1偏壓能量及該第2偏壓能量各自之電壓具有相對於該週期內之該電壓的平均值為正的位準，該第2期間係該第1偏壓能量及該第2偏壓能量各自之電壓具有相對於該平均值為負的位準， 在該第1期間，將該第1射頻電力之功率位準或該第2射頻電力之功率位準設定成使該基板上之鞘層的上端位置與該邊緣環上之鞘層的上端位置之間的差縮小。 A plasma treatment device, comprising: Chamber; a substrate supporting part is arranged in the chamber for supporting the substrate and the edge ring; at least one radio frequency power source for generating a first radio frequency power coupled to the plasma over the substrate via the substrate and a second radio frequency power coupled to the plasma over the edge ring via the edge ring; at least one bias power supply for generating a first bias energy for the substrate and a second bias energy for the edge ring; The first bias energy and the second bias energy have waveforms that repeatedly appear in a cycle having a time length that is the reciprocal of the bias frequency, The period includes a first period and a second period, the first period being that the respective voltages of the first bias energy and the second bias energy have a positive level relative to the average value of the voltage in the period, In the second period, the respective voltages of the first bias energy and the second bias energy have negative levels relative to the average value, During the first period, the power level of the first radio frequency power or the power level of the second radio frequency power is set so that the upper end position of the sheath on the substrate and the upper end position of the sheath on the edge ring The difference between is reduced. 如請求項1之電漿處理裝置，其中， 該第2偏壓能量之位準設定成因應該邊緣環之厚度的減少而增加。 The plasma processing device according to claim 1, wherein, The level of the second bias energy is set to increase as the thickness of the edge ring decreases. 如請求項2之電漿處理裝置，其中， 該邊緣環之厚度大於預定值時、在該第1期間供給之該第2射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第1期間應設定之該第2射頻電力的基準功率位準低。 The plasma treatment device as claimed in claim 2, wherein, When the thickness of the edge ring is greater than a predetermined value, the power level of the second radio frequency power supplied during the first period is set to be higher than the power level that should be set during the first period when the thickness of the edge ring is the predetermined value. The reference power level of the second radio frequency power is low. 如請求項3之電漿處理裝置，其中， 該邊緣環之厚度大於該預定值時、在該第2期間供給之該第2射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第2期間應設定之該第2射頻電力的基準功率位準高。 The plasma treatment device according to claim 3, wherein, When the thickness of the edge ring is greater than the predetermined value, the power level of the second radio frequency power supplied during the second period is set to be higher than that which should be set during the second period when the thickness of the edge ring is the predetermined value The reference power level of the second radio frequency power is high. 如請求項2之電漿處理裝置，其中， 該邊緣環之厚度大於預定值時、在該第1期間供給之該第1射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第1期間應設定之該第1射頻電力的基準功率位準高。 The plasma treatment device as claimed in claim 2, wherein, When the thickness of the edge ring is greater than a predetermined value, the power level of the first radio frequency power supplied during the first period is set to be higher than the power level that should be set during the first period when the thickness of the edge ring is the predetermined value. The reference power level of the first radio frequency power is high. 如請求項5之電漿處理裝置，其中， 該邊緣環之厚度大於該預定值時、在該第2期間供給之該第1射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第2期間應設定之該第1射頻電力的基準功率位準低。 Such as the plasma treatment device of claim 5, wherein, When the thickness of the edge ring is greater than the predetermined value, the power level of the first radio frequency power supplied during the second period is set to be higher than that which should be set during the second period when the thickness of the edge ring is the predetermined value The reference power level of the first radio frequency power is low. 如請求項2之電漿處理裝置，其中， 該邊緣環之厚度小於預定值時、在該第1期間供給之該第2射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第1期間應設定之該第2射頻電力的基準功率位準高。 The plasma treatment device as claimed in claim 2, wherein, When the thickness of the edge ring is less than a predetermined value, the power level of the second radio frequency power supplied during the first period is set to be higher than the power level that should be set during the first period when the thickness of the edge ring is the predetermined value. The reference power level of the second radio frequency power is high. 如請求項7之電漿處理裝置，其中， 該邊緣環之厚度小於該預定值時、在該第2期間供給之該第2射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第2期間應設定之該第2射頻電力的基準功率位準低。 The plasma treatment device as claimed in item 7, wherein, When the thickness of the edge ring is less than the predetermined value, the power level of the second radio frequency power supplied during the second period is set to be higher than that which should be set during the second period when the thickness of the edge ring is the predetermined value The reference power level of the second radio frequency power is low. 如請求項2之電漿處理裝置，其中， 該邊緣環之厚度小於預定值時、在該第1期間供給之該第1射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第1期間應設定之該第1射頻電力的基準功率位準低。 The plasma treatment device as claimed in claim 2, wherein, When the thickness of the edge ring is less than a predetermined value, the power level of the first radio frequency power supplied during the first period is set to be higher than the power level that should be set during the first period when the thickness of the edge ring is the predetermined value. The reference power level of the first radio frequency power is low. 如請求項9之電漿處理裝置，其中， 該邊緣環之厚度小於該預定值時、在該第2期間供給之該第1射頻電力的功率位準，設定成比該邊緣環之厚度為該預定值時、在該第2期間應設定之該第1射頻電力的基準功率位準高。 Such as the plasma treatment device of claim 9, wherein, When the thickness of the edge ring is less than the predetermined value, the power level of the first radio frequency power supplied during the second period is set to be higher than that which should be set during the second period when the thickness of the edge ring is the predetermined value The reference power level of the first radio frequency power is high. 如請求項1至10中任一項之電漿處理裝置，其中， 具備用以產生該第1射頻電力之第1射頻電源及用以產生該第2射頻電力之第2射頻電源，以作為該至少一個射頻電源。 The plasma treatment device according to any one of claims 1 to 10, wherein, A first radio frequency power source for generating the first radio frequency power and a second radio frequency power source for generating the second radio frequency power are provided as the at least one radio frequency power source. 如請求項1至10中任一項之電漿處理裝置，其中， 具備單一射頻電源作為該至少一個射頻電源， 更具備： 調整器，用以調整以該單一射頻電源產生之射頻電力分配成該第1射頻電力與該第2射頻電力之比率。 The plasma treatment device according to any one of claims 1 to 10, wherein, having a single radio frequency power source as the at least one radio frequency power source, More with: The regulator is used to adjust the distribution of the radio frequency power generated by the single radio frequency power source to the ratio of the first radio frequency power and the second radio frequency power. 如請求項1至10中任一項之電漿處理裝置，其中， 具備用以產生該第1偏壓能量之第1偏壓電源及用以產生該第2偏壓能量之第2偏壓電源，以作為該至少一個偏壓電源。 The plasma treatment device according to any one of claims 1 to 10, wherein, A first bias power supply for generating the first bias energy and a second bias power supply for generating the second bias energy are provided as the at least one bias power supply. 如請求項1至10中任一項之電漿處理裝置，其中， 具備單一偏壓電源作為該至少一個偏壓電源， 更具備： 調整器，用以調整以該單一射頻電源產生之偏壓能量分配成該第1偏壓能量與該第2偏壓能量之比率。 The plasma treatment device according to any one of claims 1 to 10, wherein, having a single bias power supply as the at least one bias power supply, More with: The adjuster is used to adjust the distribution of the bias energy generated by the single radio frequency power source into the ratio of the first bias energy and the second bias energy. 如請求項1至10中任一項之電漿處理裝置，其中 該第1偏壓能量及該第2偏壓能量分別為射頻偏壓電力或以具有該偏壓頻率之倒數的時間長度之時間間隔週期性地產生之電壓脈衝。 The plasma treatment device according to any one of claims 1 to 10, wherein The first bias energy and the second bias energy are respectively radio frequency bias power or voltage pulses periodically generated at time intervals having a time length that is the reciprocal of the bias frequency. 一種電漿處理方法，包含下列程序： 在電漿處理裝置之腔室內將基板載置於基板支撐部上，於該基板支撐部上搭載有邊緣環； 供給經由該基板而在該基板之上方耦合於電漿的第1射頻電力及經由該邊緣環而在該邊緣環之上方耦合於電漿的第2射頻電力； 對該基板供給第1偏壓能量，對該邊緣環供給第2偏壓能量； 該第1偏壓能量及該第2偏壓能量具備以具有偏壓頻率之倒數的時間長度之週期反覆出現的波形， 該週期包含第1期間及第2期間，該第1期間係該第1偏壓能量及該第2偏壓能量各自之電壓具有相對於該週期內之該電壓的平均值為正的位準，該第2期間係該第1偏壓能量及該第2偏壓能量各自之電壓具有相對於該平均值為負的位準， 在該第1期間，將該第1射頻電力之功率位準或該第2射頻電力之功率位準設定成使該基板上之鞘層的上端位置與該邊緣環上之鞘層的上端位置之間的差縮小。 A plasma treatment method comprising the following procedures: In the chamber of the plasma processing device, the substrate is placed on the substrate supporting part, and the edge ring is mounted on the substrate supporting part; supplying first radio frequency power coupled to the plasma over the substrate through the substrate and second radio frequency power coupled to the plasma over the edge ring through the edge ring; supplying a first bias energy to the substrate, and supplying a second bias energy to the edge ring; The first bias energy and the second bias energy have waveforms that repeatedly appear in a cycle having a time length that is the reciprocal of the bias frequency, The period includes a first period and a second period, the first period being that the respective voltages of the first bias energy and the second bias energy have a positive level relative to the average value of the voltage in the period, In the second period, the respective voltages of the first bias energy and the second bias energy have negative levels relative to the average value, During the first period, the power level of the first radio frequency power or the power level of the second radio frequency power is set so that the upper end position of the sheath on the substrate and the upper end position of the sheath on the edge ring The difference between is reduced.
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