TW202226315A - Multibeam image acquisition apparatus and multibeam image acquisition method - Google Patents

Multibeam image acquisition apparatus and multibeam image acquisition method Download PDF

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TW202226315A
TW202226315A TW110146647A TW110146647A TW202226315A TW 202226315 A TW202226315 A TW 202226315A TW 110146647 A TW110146647 A TW 110146647A TW 110146647 A TW110146647 A TW 110146647A TW 202226315 A TW202226315 A TW 202226315A
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substrate
deflector
electron beams
secondary electron
electron beam
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安藤厚司
石井浩一
井上和彦
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日商紐富來科技股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/145—Combinations of electrostatic and magnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/29—Reflection microscopes

Abstract

A multibeam image acquisition apparatus according to an aspect of the present invention is characterized by comprising: a stage for placing a substrate thereon; an objective lens for irradiating the substrate with a multi-primary electron beam; a separator comprising electrodes of two or more polarities for forming an electric field and magnetic poles of two or more polarities for forming a magnetic field, the separator using the electric field and the magnetic field to separate a multi-secondary electron beam emitted due to the irradiation of the substrate with the multi-primary electron beam, from the trajectory of the multi-primary electron beam; a deflector for deflecting the separated multi-secondary electron beam; a detector for detecting the deflected multi-secondary electron beam; an electrostatic electrode disposed between a major surface of the objective lens and the substrate; and a control circuit which, in a state in which the objective lens is controlled such that the multi-primary electron beam is focused on the substrate, controls the electrostatic electrode in such a way that an image-forming point of the multi-secondary electron beam is formed one or more times between the major surface of the objective lens and the substrate, and that an image-forming point of the multi-secondary electron beam is formed along the interior of the deflector.

Description

多射束圖像取得裝置及多射束圖像取得方法Multi-beam image acquisition device and multi-beam image acquisition method

本申請案是主張將2020年12月17日於日本提出申請的JP2020-209636（申請案編號）作為基礎申請案的優先權的申請案。JP2020-209636中記載的所有內容藉由參照而併入本申請案中。This application is an application claiming the priority of JP2020-209636 (application number) filed in Japan on December 17, 2020 as a basic application. All contents described in JP2020-209636 are incorporated into this application by reference.

本發明是有關於一種多射束圖像取得裝置及多射束圖像取得方法。例如，是有關於一種使用起因於多一次電子束的照射的二次電子圖像來進行圖案檢查的多射束檢查裝置的圖像取得手法。The present invention relates to a multi-beam image acquisition device and a multi-beam image acquisition method. For example, there is an image acquisition method of a multi-beam inspection apparatus that performs pattern inspection using a secondary electron image resulting from the irradiation of multiple primary electron beams.

近年來，伴隨大規模積體電路（Large Scale Integrated circuit，LSI）的高積體化及大容量化，半導體元件所要求的電路線寬變得越來越窄。而且，對於花費極大的製造成本的LSI的製造而言，良率的提昇不可或缺。但是，如以1 Gb級的動態隨機存取記憶體（Dynamic Random Access Memory，DRAM）（隨機存取記憶體）為代表般，構成LSI的圖案自次微米（submicron）級變成奈米級。近年來，伴隨形成於半導體晶圓上的LSI圖案尺寸的微細化，必須作為圖案缺陷進行檢測的尺寸亦變得極小。因此，需要對已被轉印至半導體晶圓上的超微細圖案的缺陷進行檢查的圖案檢查裝置的高精度化。In recent years, with the increase in integration and capacity of Large Scale Integrated Circuits (LSIs), the circuit line width required for semiconductor elements has become narrower. In addition, an improvement in yield is indispensable for the manufacture of LSIs, which are expensive to manufacture. However, as represented by a 1 Gb-class Dynamic Random Access Memory (DRAM) (random access memory), the pattern constituting the LSI has changed from a submicron level to a nanometer level. In recent years, with the miniaturization of the size of LSI patterns formed on semiconductor wafers, the size that must be detected as pattern defects has also become extremely small. Therefore, there is a need for a high-precision pattern inspection apparatus that inspects the defects of the ultrafine patterns transferred onto the semiconductor wafer.

於檢查裝置中，例如，對檢查對象基板照射使用了電子束的多射束，並檢測與自檢查對象基板放出的各射束對應的二次電子，從而拍攝圖案圖像。而且已知有如下的方法：藉由將拍攝所得的測定圖像與設計資料、或拍攝基板上的同一圖案所得的測定圖像進行比較來進行檢查。例如，有將拍攝同一基板上的不同地方的同一圖案所得的測定圖像資料彼此進行比較的「晶粒-晶粒（die to die）檢查」，或以進行了圖案設計的設計資料為基礎生成設計圖像資料（參照圖像），並將其與拍攝圖案所得的作為測定資料的測定圖像進行比較的「晶粒-資料庫（die to database）檢查」。所拍攝的圖像作為測定資料而被發送至比較電路。於比較電路中，於圖像彼此的對位後，按照適當的演算法將測定資料與參照資料進行比較，於不一致的情況下，判定有圖案缺陷。In the inspection apparatus, for example, a multi-beam using electron beams is irradiated on the inspection target substrate, and secondary electrons corresponding to each beam emitted from the inspection target substrate are detected, thereby capturing a pattern image. Furthermore, there is known a method for performing inspection by comparing a measurement image obtained by photographing with design data or a measurement image obtained by photographing the same pattern on a substrate. For example, there is a "die-to-die inspection" in which measurement image data obtained by photographing the same pattern at different locations on the same substrate is compared with each other, or it is created based on design data for which pattern design has been performed. "Die-to-database inspection" in which image data (reference image) is designed and compared with the measurement image obtained by photographing the pattern as measurement data. The captured image is sent to the comparison circuit as measurement data. In the comparison circuit, after the images are aligned with each other, the measurement data is compared with the reference data according to an appropriate algorithm, and in the case of inconsistency, it is determined that there is a pattern defect.

此處，於使用多電子束取得檢查圖像的情況下，於一次電子束的軌道上配置電磁場正交（E×B：E cross B）分離器，自一次電子束中分離二次電子束。E×B分離器配置於一次電子束對E×B的影響變小的一次電子束的像面共軛位置。而且，為了提高圖像的精度，理想的是將照射至試樣面的一次電子束的射束直徑收縮得小。因此，利用物鏡使一次電子束於試料面成像。於一次電子束與二次電子束中，由於入射至試樣面的照射電子的能量與產生的二次電子的能量不同且小，所以於使一次電子束在E×B分離器上聚束的情況下，二次電子束在通過物鏡後，於較E×B分離器更靠近前處成像。因此，二次電子束不會於E×B分離器上聚束而擴散。故而，利用E×B分離器分離出的二次電子於檢測光學系統中繼續擴散。因此有以下問題：存在檢測光學系統中產生的像差變大、於檢測器上多二次電子束重疊而難以各別地進行檢測的情況。所述問題並不限於檢查裝置，對於使用多電子束來取得圖像的裝置全體而言亦同樣有可能發生。Here, when an inspection image is acquired using multiple electron beams, an electromagnetic field orthogonal (E×B: E cross B) separator is arranged on the orbit of the primary electron beam, and the secondary electron beam is separated from the primary electron beam. The E×B separator is arranged at the image plane conjugate position of the primary electron beam where the influence of the primary electron beam on E×B is reduced. Furthermore, in order to improve the accuracy of the image, it is desirable to reduce the beam diameter of the primary electron beam irradiated to the sample surface. Therefore, the primary electron beam is imaged on the sample surface by the objective lens. In the primary electron beam and the secondary electron beam, since the energy of the irradiated electrons incident on the sample surface and the energy of the generated secondary electrons are different and small, the primary electron beam is focused on the E×B separator. In this case, after passing through the objective lens, the secondary electron beam is imaged closer to the front than the E×B splitter. Therefore, the secondary electron beams are not converged and spread on the E×B separator. Therefore, the secondary electrons separated by the E×B separator continue to diffuse in the detection optical system. Therefore, there is a problem that the aberration generated in the detection optical system becomes large, and multiple secondary electron beams are superimposed on the detector, making it difficult to perform detection individually. This problem is not limited to inspection apparatuses, and may also occur in all apparatuses that acquire images using multiple electron beams.

此處，揭示了以下技術：於遠離一次電子光學系統的二次電子光學系統內，配置用於修正軸上色像差的、包括四段結構的多極子透鏡的維因濾波器（Wien filter），對分離後的二次電子的軸上色像差進行修正（例如參照專利文獻1）。 [現有技術文獻] [專利文獻] Here, a technique is disclosed in which a Wien filter including a four-stage multipole lens for correcting axial chromatic aberration is arranged in a secondary electron optical system remote from the primary electron optical system , and corrects the axial chromatic aberration of the separated secondary electrons (for example, refer to Patent Document 1). [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2006-244875號公報[Patent Document 1] Japanese Patent Laid-Open No. 2006-244875

[發明所欲解決之課題][The problem to be solved by the invention]

因此，本發明的一形態提供一種能夠將照射至試樣面的一次電子束的射束直徑收縮得小、並且能夠於檢測面分離多二次電子束的各二次電子束的裝置及方法。 [解決課題之手段] Therefore, one aspect of the present invention provides an apparatus and method capable of reducing the beam diameter of the primary electron beam irradiated to the sample surface and separating secondary electron beams of multiple secondary electron beams on the detection surface. [Means of Solving Problems]

本發明一形態的多射束圖像取得裝置包括： 平台，載置基板； 物鏡，利用多一次電子束照射基板； 分離器，具有形成電場的兩極以上的電極以及形成磁場的兩極以上的磁極，且使用電場以及磁場，將因利用多一次電子束照射基板而放出的多二次電子束自多一次電子束的軌道上分離； 偏轉器，使分離出的多二次電子束偏轉； 檢測器，檢測經偏轉的多二次電子束； 靜電電極，配置於物鏡的主面與基板之間；以及 控制電路，將所述物鏡控制為所述多一次電子束對焦於所述基板上的狀態下，對靜電電極進行控制，使得於物鏡的主面與基板之間形成一次以上的多二次電子束的成像點，並且於偏轉器內的中途形成多二次電子束的成像點。 A multi-beam image acquisition device according to an aspect of the present invention includes: platform, on which the substrate is placed; an objective lens, which utilizes one more electron beam to irradiate the substrate; The separator has two or more electrodes that form an electric field and two or more magnetic poles that form a magnetic field, and uses the electric field and the magnetic field to separate the multiple secondary electron beams emitted by irradiating the substrate with the multiple primary electron beams from the orbit of the multiple primary electron beams upper separation; a deflector to deflect the separated multiple secondary electron beams; a detector for detecting the deflected multiple secondary electron beams; an electrostatic electrode, disposed between the main surface of the objective lens and the substrate; and A control circuit controls the objective lens to be in a state where the multiple primary electron beams are focused on the substrate, and controls the electrostatic electrode so that more than one multiple secondary electron beams are formed between the main surface of the objective lens and the substrate The imaging point is formed, and the imaging point of multiple secondary electron beams is formed in the middle of the deflector.

本發明一形態的多射束圖像取得方法，其中， 使用物鏡，利用多一次電子束照射載置於平台上的基板， 使用具有形成電場的兩極以上的電極以及形成磁場的兩極以上的磁極的分離器，使用電場以及磁場，將因利用多一次電子束照射基板而放出的多二次電子束自多一次電子束的軌道上分離， 使用偏轉器，使分離出的多二次電子束偏轉， 利用檢測器檢測經偏轉的多二次電子束，使用檢測出的多二次電子束的訊號取得二次電子圖像並輸出， 將所述物鏡控制為所述多一次電子束對焦於所述基板上的狀態下，使用配置於物鏡的主面與基板之間的靜電電極對多二次電子束的軌道進行控制，使得於物鏡的主面與基板之間形成一次以上的多二次電子束的成像點，並且於偏轉器內的中途形成多二次電子束的成像點。 [發明的效果] A method for acquiring a multi-beam image according to an aspect of the present invention, wherein: Using the objective lens, the substrate placed on the stage is irradiated with one more electron beam, Using a separator having two or more electrodes for forming an electric field and two or more magnetic poles for forming a magnetic field, using the electric field and the magnetic field, the multiple secondary electron beams emitted by irradiating the substrate with the multiple primary electron beams are separated from the orbit of the multiple primary electron beams separate, Using a deflector, the separated multiple secondary electron beams are deflected, A detector is used to detect the deflected multiple secondary electron beams, and the signals of the detected multiple secondary electron beams are used to obtain a secondary electron image and output, The objective lens is controlled to be in a state where the multiple primary electron beams are focused on the substrate, and the trajectory of the multiple secondary electron beams is controlled using an electrostatic electrode disposed between the main surface of the objective lens and the substrate, so that the objective lens An imaging spot of multiple secondary electron beams is formed between the main surface and the substrate, and an imaging spot of multiple secondary electron beams is formed in the middle of the deflector. [Effect of invention]

根據本發明的一形態，可將照射至基板面的一次電子束的射束直徑收縮得小，並且可於檢測面分離多二次電子束的各二次電子束。According to one aspect of the present invention, the beam diameter of the primary electron beam irradiated to the substrate surface can be reduced, and the secondary electron beams of the multiple secondary electron beams can be separated on the detection surface.

以下，於實施方式中，作為多電子束圖像取得裝置的一例，對多電子束檢查裝置進行說明。但是，圖像取得裝置並不限於檢查裝置，只要是使用多射束取得圖像的裝置即可。Hereinafter, in the embodiment, a multi-electron beam inspection apparatus will be described as an example of a multi-electron beam image acquisition apparatus. However, the image acquisition apparatus is not limited to the inspection apparatus, and may be any apparatus that acquires images using multiple beams.

[實施方式1] 圖1是表示實施方式1的圖案檢查裝置的結構的結構圖。圖1中，對已形成於基板的圖案進行檢查的檢查裝置100是多電子束檢查裝置的一例。檢查裝置100包括圖像取得機構150及控制系統電路160（控制部）。圖像取得機構150包括：電子束柱102（電子鏡筒）、檢查室103、檢測電路106A、檢測電路106B、晶片圖案記憶體123、平台驅動機構142、及雷射測長系統122。於電子束柱102內，配置有：電子槍201、照明透鏡202、成形孔徑陣列基板203、電磁透鏡205、成批偏轉器212、限制孔徑基板213、電磁透鏡206、電磁透鏡207、主偏轉器208、副偏轉器209、射束分離器（beam separator）214、靜電電極217、偏轉器218、掃描線圈219、投影透鏡224、偏轉器226、及多檢測器222。 [Embodiment 1] FIG. 1 is a configuration diagram showing the configuration of a pattern inspection apparatus according to Embodiment 1. FIG. In FIG. 1 , an inspection apparatus 100 for inspecting a pattern formed on a substrate is an example of a multi-electron beam inspection apparatus. The inspection apparatus 100 includes an image acquisition mechanism 150 and a control system circuit 160 (control unit). The image acquisition mechanism 150 includes an electron beam column 102 (electron lens barrel), an inspection chamber 103 , a detection circuit 106A, a detection circuit 106B, a wafer pattern memory 123 , a stage driving mechanism 142 , and a laser length measurement system 122 . Inside the electron beam column 102 , there are: an electron gun 201 , an illumination lens 202 , a shaped aperture array substrate 203 , an electromagnetic lens 205 , a batch deflector 212 , a limiting aperture substrate 213 , an electromagnetic lens 206 , an electromagnetic lens 207 , and a main deflector 208 , secondary deflector 209 , beam separator 214 , electrostatic electrode 217 , deflector 218 , scan coil 219 , projection lens 224 , deflector 226 , and multi-detector 222 .

由電子槍201、電磁透鏡202、成形孔徑陣列基板203、電磁透鏡205、成批偏轉器212、限制孔徑基板213、電磁透鏡206、電磁透鏡207（物鏡）、主偏轉器208、及副偏轉器209構成一次電子光學系統151。另外，由靜電電極217、掃描線圈219、電磁透鏡207（物鏡）、射束分離器214、偏轉器218、電磁透鏡224、及偏轉器226構成二次電子光學系統152。It consists of electron gun 201, electromagnetic lens 202, shaped aperture array substrate 203, electromagnetic lens 205, batch deflector 212, limited aperture substrate 213, electromagnetic lens 206, electromagnetic lens 207 (objective lens), main deflector 208, and sub-deflector 209 The primary electron optical system 151 is constituted. In addition, the secondary electron optical system 152 is constituted by the electrostatic electrode 217 , the scanning coil 219 , the electromagnetic lens 207 (objective lens), the beam splitter 214 , the deflector 218 , the electromagnetic lens 224 , and the deflector 226 .

於檢查室103內，至少配置可於XY方向上移動的平台105。於平台105上配置作為檢查對象的基板101（試樣）。基板101包含曝光用遮罩基板及矽晶圓等半導體基板。當基板101為半導體基板時，於半導體基板形成有多個晶片圖案（晶圓晶粒（wafer die））。當基板101為曝光用遮罩基板時，於曝光用遮罩基板形成有晶片圖案。晶片圖案包含多個圖形圖案。將已形成於所述曝光用遮罩基板的晶片圖案多次曝光轉印至半導體基板上，藉此於半導體基板形成多個晶片圖案（晶圓晶粒）。以下，主要對基板101為半導體基板的情況進行說明。基板101例如使圖案形成面朝向上側而配置於平台105。另外，於平台105上，配置有將自配置於檢查室103的外部的雷射測長系統122照射的雷射測長用的雷射光反射的反射鏡216。In the inspection room 103, at least a stage 105 movable in the XY directions is arranged. The substrate 101 (sample) to be inspected is placed on the stage 105 . The substrate 101 includes a mask substrate for exposure and a semiconductor substrate such as a silicon wafer. When the substrate 101 is a semiconductor substrate, a plurality of wafer patterns (wafer dies) are formed on the semiconductor substrate. When the substrate 101 is a mask substrate for exposure, a wafer pattern is formed on the mask substrate for exposure. The wafer pattern includes a plurality of graphic patterns. A plurality of wafer patterns (wafer die) are formed on the semiconductor substrate by exposing and transferring the wafer pattern formed on the exposure mask substrate to the semiconductor substrate for multiple times. Hereinafter, the case where the substrate 101 is a semiconductor substrate will be mainly described. The board|substrate 101 is arrange|positioned on the stage 105 so that a pattern formation surface may face upper side, for example. In addition, on the stage 105, a reflecting mirror 216 for reflecting the laser light for laser length measurement irradiated from the laser length measurement system 122 arranged outside the examination room 103 is arranged.

另外，多檢測器222於電子束柱102的外部與檢測電路106A連接。檢測電路106A與晶片圖案記憶體123連接。另外，配置於偏轉器218的中間位置的後述中間孔徑基板由導電性材料的基板或於表面配置有導電膜的基板構成，且於電子束柱102的外部與檢測電路106B連接。檢測電路106B與晶片圖案記憶體123連接。In addition, the multi-detector 222 is connected to the detection circuit 106A outside the electron beam column 102 . The detection circuit 106A is connected to the wafer pattern memory 123 . The intermediate aperture substrate, which will be described later, arranged in the middle of the deflector 218 is composed of a substrate of a conductive material or a substrate of which a conductive film is arranged on the surface, and is connected to the detection circuit 106B outside the electron beam column 102 . The detection circuit 106B is connected to the wafer pattern memory 123 .

於控制系統電路160中，對檢查裝置100整體進行控制的控制計算機110經由匯流排120而與位置電路107、比較電路108、參照圖像製作電路112、平台控制電路114、透鏡控制電路124、遮蔽控制電路126、偏轉控制電路128、延遲控制電路130、電極控制電路132、磁碟裝置等儲存裝置109、監視器117、記憶體118、以及列印機119連接。另外，偏轉控制電路128與數位-類比轉換（Digital-to-Analog Conversion，DAC）放大器144、DAC放大器146、DAC放大器147、DAC放大器148連接。DAC放大器146與主偏轉器208連接，DAC放大器144與副偏轉器209連接。DAC放大器148與偏轉器218連接。In the control system circuit 160 , the control computer 110 that controls the entire inspection apparatus 100 communicates with the position circuit 107 , the comparison circuit 108 , the reference image creation circuit 112 , the stage control circuit 114 , the lens control circuit 124 , the shielding The control circuit 126 , the deflection control circuit 128 , the delay control circuit 130 , the electrode control circuit 132 , the storage device 109 such as a magnetic disk device, the monitor 117 , the memory 118 , and the printer 119 are connected. In addition, the deflection control circuit 128 is connected to a digital-to-analog conversion (DAC) amplifier 144 , a DAC amplifier 146 , a DAC amplifier 147 , and a DAC amplifier 148 . The DAC amplifier 146 is connected to the main deflector 208 , and the DAC amplifier 144 is connected to the sub-deflector 209 . The DAC amplifier 148 is connected to the deflector 218 .

另外，晶片圖案記憶體123與比較電路108連接。另外，於平台控制電路114的控制下，藉由驅動機構142來驅動平台105。於驅動機構142中，例如構成如於平台座標系中的X方向、Y方向、θ方向上進行驅動的三軸（X-Y-θ）馬達般的驅動系統，從而平台105可於XYθ方向上移動。該些未圖示的X馬達、Y馬達、θ馬達例如可使用步進馬達。平台105藉由XYθ各軸的馬達而可於水平方向及旋轉方向上移動。而且，平台105的移動位置藉由雷射測長系統122來測定，並被供給至位置電路107。雷射測長系統122接收來自反射鏡216的反射光，藉此以雷射干涉法的原理對平台105的位置進行測長。平台座標系例如相對於與多一次電子束20的光軸正交的面，設定一次座標系的X方向、Y方向、θ方向。In addition, the wafer pattern memory 123 is connected to the comparison circuit 108 . In addition, under the control of the platform control circuit 114 , the platform 105 is driven by the driving mechanism 142 . The drive mechanism 142 is constituted by, for example, a drive system such as a three-axis (X-Y-θ) motor that drives in the X direction, the Y direction, and the θ direction in the stage coordinate system, so that the stage 105 can move in the XYθ direction. For example, a stepping motor can be used for the X motor, the Y motor, and the θ motor, which are not shown. The stage 105 is movable in the horizontal direction and the rotational direction by the motors of the XYθ axes. Then, the moving position of the stage 105 is measured by the laser length measuring system 122 and supplied to the position circuit 107 . The laser length measuring system 122 receives the reflected light from the mirror 216, thereby measuring the length of the position of the platform 105 based on the principle of laser interferometry. In the stage coordinate system, the X direction, the Y direction, and the θ direction of the primary coordinate system are set, for example, with respect to a plane orthogonal to the optical axis of the plurality of primary electron beams 20 .

電磁透鏡202、電磁透鏡205、電磁透鏡206、電磁透鏡207、電磁透鏡224、掃描線圈219、以及射束分離器214由透鏡控制電路124控制。另外，成批偏轉器212包含兩極以上的電極，且針對每一電極經由未圖示的DAC放大器而由遮蔽控制電路126來控制。副偏轉器209包含四極以上的電極，且針對每一電極經由DAC放大器144而由偏轉控制電路128來控制。主偏轉器208包含四極以上的電極，且針對每一電極經由DAC放大器146而由偏轉控制電路128來控制。偏轉器218包括包含四極以上的電極的兩段偏轉器，且針對每一電極經由DAC放大器148而由偏轉控制電路128來控制。另外，偏轉器226包含四極以上的電極，且針對每一電極經由未圖示的DAC放大器而由偏轉控制電路128來控制。靜電電極217例如包含在中央形成有開口部的電極基板，且由電極控制電路132來控制。靜電電極217配置於電磁透鏡207（物鏡）的主面與基板101之間。延遲控制電路130對基板101施加所需的延遲電位，來調整照射至基板101的多一次電子束20的能量。The electromagnetic lens 202 , the electromagnetic lens 205 , the electromagnetic lens 206 , the electromagnetic lens 207 , the electromagnetic lens 224 , the scanning coil 219 , and the beam splitter 214 are controlled by the lens control circuit 124 . In addition, the batch deflector 212 includes two or more electrodes, and is controlled by the shading control circuit 126 via a DAC amplifier (not shown) for each electrode. The secondary deflector 209 includes four or more electrodes, and is controlled by the deflection control circuit 128 via the DAC amplifier 144 for each electrode. The main deflector 208 includes more than four electrodes and is controlled by the deflection control circuit 128 via the DAC amplifier 146 for each electrode. The deflector 218 includes a two-stage deflector comprising more than four poles of electrodes, and is controlled by the deflection control circuit 128 via the DAC amplifier 148 for each electrode. In addition, the deflector 226 includes four or more electrodes, and is controlled by the deflection control circuit 128 via a DAC amplifier (not shown) for each electrode. The electrostatic electrode 217 includes, for example, an electrode substrate having an opening formed in the center, and is controlled by the electrode control circuit 132 . The electrostatic electrode 217 is arranged between the main surface of the electromagnetic lens 207 (objective lens) and the substrate 101 . The delay control circuit 130 applies a desired delay potential to the substrate 101 to adjust the energy of the multiple primary electron beams 20 irradiated to the substrate 101 .

於電子槍201連接有未圖示的高壓電源電路，藉由自高壓電源電路對於電子槍201內的未圖示的燈絲與引出電極間的加速電壓的施加，並且藉由規定的引出電極（韋乃特（Wehnelt））的電壓的施加與規定的溫度的陰極的加熱，已自陰極放出的電子群得到加速，形成電子束200而被放出。An unillustrated high-voltage power supply circuit is connected to the electron gun 201, and an accelerating voltage is applied between the unillustrated filament and the extraction electrode in the electron gun 201 from the high-voltage power supply circuit, and a predetermined extraction electrode (Wenette) is applied. (Wehnelt)) application of a voltage and heating of the cathode at a predetermined temperature, the electron group that has been released from the cathode is accelerated, and the electron beam 200 is formed and released.

此處，於圖1中記載了在對實施方式1進行說明的方面必要的結構。對於檢查裝置100而言，通常亦可包括必要的其他結構。Here, the configuration necessary for explaining the first embodiment is described in FIG. 1 . For the inspection device 100, other necessary structures may also be generally included.

圖2是表示實施方式1的成形孔徑陣列基板的結構的概念圖。圖2中，於成形孔徑陣列基板203，二維狀的橫（x方向）m 1行×縱（y方向）n 1段（m 1、n 1為2以上的整數）的孔（開口部）22在x方向、y方向上以規定的排列間距形成。於圖2的例子中，示出了形成有23×23的孔（開口部）22的情況。各孔22均由相同尺寸形狀的矩形形成。或者，亦可為相同外徑的圓形。電子束200的一部分分別通過所述多個孔22，藉此形成多一次電子束20。對於成形孔徑陣列基板203，成為形成多一次電子束的多射束形成機構的一例。 FIG. 2 is a conceptual diagram showing the structure of the formed aperture array substrate according to Embodiment 1. FIG. In FIG. 2 , in the forming aperture array substrate 203 , holes (openings) of two-dimensional horizontal (x direction) m 1 row × vertical (y direction) n 1 stages (m 1 and n 1 are integers of 2 or more) are formed. 22 is formed at a predetermined arrangement pitch in the x-direction and the y-direction. In the example of FIG. 2, the case where the hole (opening part) 22 of 23*23 is formed is shown. Each hole 22 is formed by a rectangle of the same size and shape. Alternatively, it may be circular with the same outer diameter. Parts of the electron beams 200 pass through the plurality of holes 22, respectively, thereby forming a plurality of primary electron beams 20. FIG. The shaped aperture array substrate 203 is an example of a multi-beam forming mechanism for forming a plurality of primary electron beams.

圖像取得機構150使用由電子束形成的多射束，自形成有圖形圖案的基板101取得圖形圖案的被檢查圖像。以下，對檢查裝置100的圖像取得機構150的動作進行說明。The image acquisition means 150 acquires an image to be inspected of the graphic pattern from the substrate 101 on which the graphic pattern is formed using a multi-beam formed of electron beams. Hereinafter, the operation of the image acquisition unit 150 of the inspection apparatus 100 will be described.

已自電子槍201（放出源）放出的電子束200被電磁透鏡202折射而對成形孔徑陣列基板203整體進行照明。於成形孔徑陣列基板203，如圖2所示般形成有多個孔22（開口部），電子束200對包含多個孔22的全體在內的區域進行照明。已照射至多個孔22的位置的電子束200的各一部分分別通過所述成形孔徑陣列基板203的多個孔22，藉此形成多一次電子束20。The electron beam 200 emitted from the electron gun 201 (emission source) is refracted by the electromagnetic lens 202 to illuminate the entire shaped aperture array substrate 203 . As shown in FIG. 2 , a plurality of holes 22 (openings) are formed in the shaped aperture array substrate 203 , and the electron beam 200 illuminates an area including the entirety of the plurality of holes 22 . Each part of the electron beam 200 that has been irradiated to the positions of the plurality of holes 22 passes through the plurality of holes 22 of the shaped aperture array substrate 203 , respectively, thereby forming a plurality of primary electron beams 20 .

所形成的多一次電子束20被電磁透鏡205、及電磁透鏡206分別折射，一面反覆形成中間像及交叉（cross over），一面通過配置於多一次電子束20的各射束的中間像面（像面共軛位置：I.I.P）的射束分離器214而前進至電磁透鏡207。另外，藉由在多一次電子束20的交叉位置附近配置通過孔受到限制的限制孔徑基板213，可遮蔽散射射束。另外，利用成批偏轉器212使多一次電子束20整體成批偏轉，並利用限制孔徑基板213將多一次電子束20整體遮蔽，藉此可對多一次電子束20整體進行遮蔽。The formed multi-primary electron beam 20 is refracted by the electromagnetic lens 205 and the electromagnetic lens 206, respectively, and while repeatedly forming an intermediate image and a cross over, it passes through the intermediate image plane ( Image plane conjugate position: I.I.P) of the beam splitter 214 and proceed to the electromagnetic lens 207 . In addition, by arranging the limiting aperture substrate 213 whose passage holes are limited in the vicinity of the intersecting position of the multiple primary electron beams 20, the scattered beams can be shielded. In addition, by using the batch deflector 212 to deflect the entire multiple primary electron beams 20 in a batch, and using the limiting aperture substrate 213 to shield the multiple multiple primary electron beams 20 as a whole, the multiple multiple primary electron beams 20 can be shielded as a whole.

當多一次電子束20入射至電磁透鏡207（物鏡）時，電磁透鏡207將多一次電子束20聚焦於基板101。換言之，電磁透鏡207利用多一次電子束20照射基板101。藉由物鏡207而焦點對準（對焦）於基板101（試樣）面上的多一次電子束20被主偏轉器208及副偏轉器209成批偏轉，並照射至各射束於基板101上的各自的照射位置。如此，一次電子光學系統151利用多一次電子束照射基板101面。When the multi-order electron beam 20 is incident on the electromagnetic lens 207 (objective lens), the electromagnetic lens 207 focuses the multi-order electron beam 20 on the substrate 101 . In other words, the electromagnetic lens 207 irradiates the substrate 101 with the multiple primary electron beams 20 . A plurality of primary electron beams 20 that are in focus (focused) on the surface of the substrate 101 (sample) by the objective lens 207 are deflected in batches by the main deflector 208 and the sub-deflector 209 , and irradiate each beam onto the substrate 101 the respective irradiation positions. In this way, the primary electron optical system 151 irradiates the surface of the substrate 101 with a plurality of primary electron beams.

當多一次電子束20被照射至基板101的所需位置時，由於所述多一次電子束20的照射，自基板101放出與多一次電子束20的各射束對應的包含反射電子的二次電子的射束（多二次電子束300）。When the multiple primary electron beam 20 is irradiated to a desired position of the substrate 101 , secondary electrons including reflected electrons corresponding to each of the multiple primary electron beam 20 are emitted from the substrate 101 due to the irradiation of the multiple primary electron beam 20 . A beam of electrons (multiple secondary electron beams 300).

已自基板101放出的多二次電子束300通過電磁透鏡207而前進至射束分離器214。The multiple secondary electron beams 300 that have been emitted from the substrate 101 pass through the electromagnetic lens 207 and proceed to the beam splitter 214 .

此處，射束分離器214（E×B分離器）具有使用線圈的兩極以上的多個磁極、以及兩極以上的多個電極。而且，利用所述多個磁極產生指向性的磁場。同樣地，利用多個電極產生指向性的電場。具體而言，射束分離器214在與多一次電子束20的中心射束前進的方向（軌道中心軸）正交的面上，使電場與磁場產生於正交的方向上。不論電子的行進方向如何，電場均朝相同的方向帶來力。相對於此，磁場按照弗萊明左手定則（Fleming's left hand rule）而帶來力。因此，可根據電子的侵入方向來使作用於電子的力的方向變化。於自上側侵入射束分離器214的多射束20中，由電場所帶來的力與由磁場所帶來的力相互抵消，多一次電子束20朝下方直線前進。相對於此，於自下側侵入射束分離器214的多二次電子束300中，由電場所帶來的力與由磁場所帶來的力均朝相同的方向發揮作用，多二次電子束300朝斜上方彎曲，從而自多一次電子束20的軌道上分離。Here, the beam splitter 214 (E×B splitter) has a plurality of magnetic poles using two or more poles of a coil, and a plurality of electrodes having two or more poles. Then, a directional magnetic field is generated by the plurality of magnetic poles. Likewise, a directional electric field is generated using a plurality of electrodes. Specifically, the beam splitter 214 generates an electric field and a magnetic field in a plane orthogonal to the direction in which the center beam of the plurality of primary electron beams 20 advances (orbit center axis). The electric field brings the force in the same direction regardless of the electron's direction of travel. In contrast, magnetic fields impart force according to Fleming's left hand rule. Therefore, the direction of the force acting on the electrons can be changed according to the intrusion direction of the electrons. In the multi-beam 20 entering the beam splitter 214 from above, the force due to the electric field and the force due to the magnetic field cancel each other out, and the multi-primary electron beam 20 goes straight downward. On the other hand, in the multiple secondary electron beam 300 entering the beam splitter 214 from the lower side, the force due to the electric field and the force due to the magnetic field act in the same direction, and the multiple secondary electron beams act in the same direction. The beam 300 is bent obliquely upward to be separated from the orbit of the multi-primary electron beam 20 .

已朝斜上方彎曲而自多一次電子束20分離的多二次電子束300藉由二次電子光學系統152被導向多檢測器222。具體而言，自多一次電子束20分離的多二次電子束300藉由被偏轉器218偏轉而進一步彎曲，於遠離多一次電子束20的軌道上的位置，藉由電磁透鏡224而向聚束方向折射，同時被投影至多檢測器222。多檢測器222（多二次電子束檢測器）檢測被折射、投影而成的多二次電子束300。多檢測器222具有多個檢測元件（例如未圖示的二極體型的二維感測器）。而且，多一次電子束20的各射束於多檢測器222的檢測面，與多二次電子束300的各二次電子束所對應的檢測元件碰撞而產生電子，並按照各畫素生成二次電子圖像資料。由多檢測器222檢測出的強度訊號被輸出至檢測電路106A。The multiple secondary electron beams 300 that have been bent obliquely upward and separated from the multiple primary electron beams 20 are guided to the multiple detectors 222 by the secondary electron optical system 152 . Specifically, the multiple secondary electron beam 300 separated from the multiple primary electron beam 20 is further bent by being deflected by the deflector 218 , and is focused by the electromagnetic lens 224 at a position on the track away from the multiple primary electron beam 20 . The beam direction is refracted and simultaneously projected onto the multi-detector 222 . The multiple detector 222 (multiple secondary electron beam detector) detects the refracted and projected multiple secondary electron beam 300 . The multi-detector 222 has a plurality of detection elements (for example, a two-dimensional sensor of a diode type not shown). Furthermore, each beam of the multi-primary electron beam 20 collides with the detection element corresponding to each secondary electron beam of the multi-secondary electron beam 300 on the detection surface of the multi-detector 222 to generate electrons, and generates electrons for each pixel. Secondary electronic image data. The intensity signal detected by the multi-detector 222 is output to the detection circuit 106A.

圖3是表示實施方式1與比較例中的中心射束的軌道一例的圖。圖3中，多一次電子束20的中心的一次電子束21通過配置於像面共軛位置的射束分離器214後擴散，且藉由磁透鏡207（物鏡），軌道向聚束方向彎曲而於基板101面上成像。而且，自基板101放出的多二次電子束300中，與中心的一次電子束21對應的中心的二次電子束301於放出時的能量小於中心一次電子束21向基板101的入射能量。因此，於比較例中，於磁透鏡207將多一次電子束20聚焦於基板101上的條件下，雖然中心二次電子束301藉由磁透鏡207（物鏡）而軌道向聚束方向彎曲，但於到達射束分離器214之前的位置形成中間像面600。其後，中心二次電子束301一邊擴散一邊前進至射束分離器214。而且，於比較例中，中心二次電子束301一邊進一步擴散一邊前進至偏轉器218。FIG. 3 is a diagram showing an example of a trajectory of a center beam in Embodiment 1 and a comparative example. In FIG. 3 , the primary electron beam 21 at the center of the multiple primary electron beams 20 passes through the beam splitter 214 disposed at the conjugate position of the image plane and then spreads, and the orbit is bent in the focusing direction by the magnetic lens 207 (objective lens) The image is formed on the surface of the substrate 101 . Furthermore, among the multiple secondary electron beams 300 emitted from the substrate 101 , the energy of the central secondary electron beam 301 corresponding to the central primary electron beam 21 at the time of emission is smaller than the incident energy of the central primary electron beam 21 on the substrate 101 . Therefore, in the comparative example, under the condition that the magnetic lens 207 focuses the multiple primary electron beams 20 on the substrate 101 , although the center secondary electron beam 301 is curved toward the focusing direction by the magnetic lens 207 (objective lens), An intermediate image plane 600 is formed at a position before reaching the beam splitter 214 . After that, the center secondary electron beam 301 advances to the beam splitter 214 while being diffused. Furthermore, in the comparative example, the center secondary electron beam 301 proceeds to the deflector 218 while being further diffused.

與此相對，於實施方式1中，藉由對靜電電極217施加負電位來降低自基板101放出的多二次電子束300的能量。藉此，即便於磁透鏡207將多一次電子束20聚焦（對焦）於基板101上的條件下，一次以上的多二次電子束300的各二次電子束亦於磁透鏡207（物鏡）的主面與基板101之間形成中間像面（成像點）。因由靜電電極217形成的電場的影響而能量變小的多二次電子束300由於磁透鏡207的磁場的影響，軌道於較磁透鏡207（物鏡）的主面更靠近前的位置彎曲，於磁透鏡207（物鏡）的主面與基板101之間形成一次以上的中間像面601（成像點）。於圖3的例子中，示出了中心二次電子束301於磁透鏡207（物鏡）的主面與基板101之間形成一次中間像面601（成像點）的情況。然後，於形成像面601後一邊擴散一邊前進至磁透鏡207。然後，藉由磁透鏡207（物鏡）而軌道向聚束方向彎曲，並前進至射束分離器214。然後，於偏轉器218內的中途形成中間像面602（成像點）。關於中心二次電子束301以外的各二次電子束，亦同樣地於磁透鏡207（物鏡）的主面與基板101之間形成一次以上的中間像面601（成像點），且於偏轉器218內的中途形成中間像面602（成像點）。On the other hand, in Embodiment 1, the energy of the multiple secondary electron beam 300 emitted from the substrate 101 is reduced by applying a negative potential to the electrostatic electrode 217 . Thereby, even if the magnetic lens 207 focuses (focuses) the multiple primary electron beams 20 on the substrate 101 , the secondary electron beams of the multiple primary electron beams 300 of one or more primary electron beams 300 are also focused on the magnetic lens 207 (objective lens). An intermediate image plane (imaging point) is formed between the main surface and the substrate 101 . Due to the influence of the electric field formed by the electrostatic electrode 217, the energy of the multi-secondary electron beam 300 is reduced due to the influence of the magnetic field of the magnetic lens 207, and the orbit is bent at a position closer to the front than the main surface of the magnetic lens 207 (objective lens), and the magnetic An intermediate image plane 601 (imaging point) is formed once or more between the main surface of the lens 207 (objective lens) and the substrate 101 . In the example of FIG. 3 , the case where the central secondary electron beam 301 forms the primary intermediate image plane 601 (imaging point) between the main surface of the magnetic lens 207 (objective lens) and the substrate 101 is shown. Then, after the image plane 601 is formed, it proceeds to the magnetic lens 207 while spreading. Then, the orbit is bent in the focusing direction by the magnetic lens 207 (objective lens), and proceeds to the beam splitter 214 . Then, an intermediate image plane 602 (imaging point) is formed in the middle of the deflector 218 . For each secondary electron beam other than the central secondary electron beam 301 , an intermediate image plane 601 (imaging point) is formed once or more between the main surface of the magnetic lens 207 (objective lens) and the substrate 101 in the same manner, and the deflector An intermediate image plane 602 (imaging point) is formed midway within 218 .

再者，於實施方式1中，將藉由磁透鏡207（物鏡）的透鏡作用而各一次電子束的軌道彎曲且軌道的方向自發散方向變化為聚束方向的位置設為物鏡的主面。Furthermore, in Embodiment 1, the position where the orbit of each primary electron beam is curved by the lens action of the magnetic lens 207 (objective lens) and the direction of the orbit changes from the divergent direction to the condensing direction is set as the principal surface of the objective lens.

圖4是表示實施方式1的比較例中的多二次電子束的軌道一例的圖。 圖5是表示實施方式1中的多二次電子束的軌道一例的圖。如圖4所示，於比較例中，多二次電子束300的中心二次電子束301在通過磁透鏡207後，於到達射束分離器214之前的位置形成中間像面，之後一邊擴散一邊前進至射束分離器214及偏轉器218。因此，於偏轉器218的位置，中心二次電子束301的射束直徑D1擴大。關於其他的各二次電子束，射束直徑亦同樣會擴大。各二次電子束的射束直徑D1越大，則偏轉器218中產生的像差越大。因此，即便欲藉由通過偏轉器218之後的磁透鏡224的透鏡作業使其收斂，亦無法於多檢測器222的檢測面上使射束直徑收縮，各二次電子束相互重疊，存在二次電子束間的分離變得困難的情況。其結果，難以各別地檢測各二次電子束。再者，於物鏡優先使二次電子束的聚焦對準偏轉器218的位置的情況下，會犧牲一次電子束的聚焦，因此，即便達成了二次電子束間的分離，所獲得的基板的圖案圖像的精度亦會劣化。如此，於原理上，難以利用物鏡對能量不同的一次系統與二次系統兩者的成像點進行控制。 FIG. 4 is a diagram showing an example of the trajectory of the multiple secondary electron beams in the comparative example of Embodiment 1. FIG. FIG. 5 is a diagram showing an example of the trajectory of the multiple secondary electron beam in Embodiment 1. FIG. As shown in FIG. 4 , in the comparative example, after passing through the magnetic lens 207 , the center secondary electron beam 301 of the multiple secondary electron beam 300 forms an intermediate image plane at a position before reaching the beam splitter 214 , and then spreads it. Proceed to beam splitter 214 and deflector 218 . Therefore, at the position of the deflector 218, the beam diameter D1 of the central secondary electron beam 301 is enlarged. As for the other secondary electron beams, the beam diameter is similarly enlarged. The larger the beam diameter D1 of each secondary electron beam, the larger the aberration generated in the deflector 218 . Therefore, even if it is attempted to converge by the lens operation of the magnetic lens 224 after passing through the deflector 218, the beam diameter cannot be reduced on the detection surface of the multi-detector 222, the secondary electron beams overlap each other, and there are secondary electron beams. When separation between electron beams becomes difficult. As a result, it is difficult to detect each secondary electron beam individually. Furthermore, in the case where the objective lens preferentially aligns the focus of the secondary electron beam with the position of the deflector 218, the focus of the primary electron beam is sacrificed. Therefore, even if the separation between the secondary electron beams is achieved, the obtained substrate has The accuracy of the pattern image is also degraded. In this way, in principle, it is difficult to control the imaging points of both the primary system and the secondary system with different energies using the objective lens.

相對於此，於實施方式1中，如圖5所示，電極控制電路132（控制電路）使用靜電電極217對多二次電子束300的軌道進行控制，使得於磁透鏡207（物鏡）的主面與基板101之間形成一次以上的所述多二次電子束的中間像面（成像點），並且於偏轉器218內的中途形成多二次電子束300的中間像面（成像點）。換言之，電極控制電路132將磁透鏡207（物鏡）控制為多一次電子束20對焦於基板101上的狀態下，對靜電電極217進行控制，使得如圖5所示般，於磁透鏡207（物鏡）的主面與基板101之間形成一次以上的多二次電子束300的中間像面（成像點），並且於偏轉器218內的中途形成多二次電子束的中間像面（成像點）。具體而言，對施加至靜電電極217的負電位的大小進行控制。藉此，如圖5所示，可於偏轉器218內的位置減小中心二次電子束301的射束直徑。因此，可抑制偏轉器218中產生的像差。藉此，藉由通過偏轉器218後的磁透鏡224的透鏡作業，可於多檢測器222的檢測面上使射束直徑收縮，可使各二次電子束於分離的狀態下在多檢測器222的檢測面上成像。其結果，可各別地檢測各二次電子束。On the other hand, in Embodiment 1, as shown in FIG. 5 , the electrode control circuit 132 (control circuit) uses the electrostatic electrode 217 to control the trajectory of the multi-secondary electron beam 300 so that the main driver of the magnetic lens 207 (objective lens) The intermediate image planes (imaging spots) of the multiple secondary electron beams are formed one or more times between the surface and the substrate 101 , and the intermediate image planes (imaging spots) of the multiple secondary electron beams 300 are formed in the middle of the deflector 218 . In other words, the electrode control circuit 132 controls the magnetic lens 207 (objective lens) so that one more primary electron beam 20 is focused on the substrate 101 , and controls the electrostatic electrode 217 so that, as shown in FIG. 5 , the magnetic lens 207 (objective lens) ) and the substrate 101 to form an intermediate image plane (imaging spot) of the multiple secondary electron beams 300 , and in the middle of the deflector 218 , an intermediate image plane (imaging spot) of the multiple secondary electron beams is formed . Specifically, the magnitude of the negative potential applied to the electrostatic electrode 217 is controlled. Thereby, as shown in FIG. 5 , the beam diameter of the center secondary electron beam 301 can be reduced at the position within the deflector 218 . Therefore, aberrations generated in the deflector 218 can be suppressed. In this way, by the lens operation of the magnetic lens 224 after passing through the deflector 218, the beam diameter can be contracted on the detection surface of the multi-detector 222, and each secondary electron beam can be separated from the multi-detector beam. 222 is imaged on the detection surface. As a result, each secondary electron beam can be detected individually.

此處，實施方式1的偏轉器218具有第一段的偏轉器52（第一偏轉器）以及第二段的偏轉器54（第二偏轉器）。第二段的偏轉器54配置於自第一段的偏轉器52的配置方向朝多檢測器222側傾斜的方向。第一段的偏轉器52使多二次電子束300偏轉，第二段的偏轉器54使通過了第一段的偏轉器52的多二次電子束300進一步偏轉。如此，偏轉器218藉由兩次偏轉而使多二次電子束300的軌道朝向多檢測器222。第一段的偏轉器52與第二段的偏轉器54分別包含兩極子以上的電極。而且，於第一段的偏轉器52與第二段的偏轉器54中，分別於多二次電子束300通過由兩極子以上的電極包圍的內部時使多二次電子束300偏轉。第一段的偏轉器52與第二段的偏轉器54例如包含兩極子以上的相同電極組，對第一段的偏轉器52的各電極與第二段的偏轉器54各自所對應的電極施加例如相同的電位。Here, the deflector 218 of Embodiment 1 includes the deflector 52 (first deflector) in the first stage and the deflector 54 (second deflector) in the second stage. The deflectors 54 in the second stage are arranged in a direction inclined toward the multi-detector 222 side from the arrangement direction of the deflectors 52 in the first stage. The deflector 52 of the first stage deflects the multiple secondary electron beam 300, and the deflector 54 of the second stage further deflects the multiple secondary electron beam 300 that has passed the deflector 52 of the first stage. In this way, the deflector 218 orients the trajectory of the multiple secondary electron beam 300 toward the multiple detector 222 by deflecting twice. The deflector 52 of the first stage and the deflector 54 of the second stage respectively include electrodes with more than two poles. Further, in the deflector 52 in the first stage and the deflector 54 in the second stage, the multi-secondary electron beam 300 is deflected when the multi-secondary electron beam 300 passes through the interior surrounded by electrodes of two or more poles, respectively. The deflector 52 of the first stage and the deflector 54 of the second stage include, for example, the same electrode group with more than two poles. For example the same potential.

而且，於第一段的偏轉器52與第二段的偏轉器54之間配置中間孔徑基板56。於中間孔徑基板56，在中央部形成有用於供多二次電子束300通過的開口部55。電極控制電路132對靜電電極217進行控制，使得於作為偏轉器218內的中途的中間孔徑基板56的位置形成多二次電子束300的各二次電子束的中間像面（成像點）。Furthermore, an intermediate aperture substrate 56 is arranged between the deflectors 52 of the first stage and the deflectors 54 of the second stage. The intermediate aperture substrate 56 is formed with an opening 55 in the center portion through which the multiple secondary electron beams 300 pass. The electrode control circuit 132 controls the electrostatic electrode 217 so that an intermediate image plane (imaging spot) of each secondary electron beam of the multiple secondary electron beam 300 is formed at the position of the intermediate aperture substrate 56 in the deflector 218 .

圖6A至圖6C是表示實施方式1中的電子束的軌道的模擬結果一例的圖。於圖6A的例子中，示出自E×B分離器（射束分離器214）至基板101之間的、多一次電子束20的中心一次電子束21的軌道。於圖6B的例子中，示出自基板101至中間孔徑基板56之間的、多二次電子束300的中心二次電子束301的軌道。於圖6C的例子中，示出自中間孔徑基板56附近至多檢測器222之間的、多二次電子束300的中心二次電子束301的軌道。再者，圖6A～圖6C中，縱軸表示射束直徑。橫軸表示位置。再者，於圖6A～圖6C間，縱軸及橫軸的比例尺不一致。如圖6A的例子所示，藉由物鏡，中心一次電子束21聚焦於基板101上。於所述狀態下，如圖6B的例子所示，中心二次電子束301於基板101與物鏡主面之間形成中間像面後，於中間孔徑基板56的位置進一步形成中間像面。於所述情況下，如圖6C的例子所示般可知，中心二次電子束301可於多檢測器222的位置聚焦。如此，根據實施方式1，可於維持一次系統的高解析度（於基板面上的成像）的狀態下，使二次系統於中間孔徑基板56的位置上成像。6A to 6C are diagrams showing an example of simulation results of the trajectory of the electron beam in Embodiment 1. FIG. In the example of FIG. 6A , the trajectories of the central primary electron beams 21 of the multiple primary electron beams 20 are shown from the E×B splitter (beam splitter 214 ) to the substrate 101 . In the example of FIG. 6B , the trajectory of the center secondary electron beam 301 of the multiple secondary electron beam 300 from the substrate 101 to the intermediate aperture substrate 56 is shown. In the example of FIG. 6C , the trajectory of the central secondary electron beam 301 of the multiple secondary electron beam 300 is shown from the vicinity of the intermediate aperture substrate 56 to between the multiple detectors 222 . 6A to 6C, the vertical axis represents the beam diameter. The horizontal axis represents the position. 6A to 6C, the scales of the vertical axis and the horizontal axis do not match. As shown in the example of FIG. 6A , the central primary electron beam 21 is focused on the substrate 101 by the objective lens. In this state, as shown in the example of FIG. 6B , after the central secondary electron beam 301 forms an intermediate image plane between the substrate 101 and the main surface of the objective lens, an intermediate image plane is further formed at the position of the intermediate aperture substrate 56 . In this case, as shown in the example of FIG. 6C , the central secondary electron beam 301 can be focused at the position of the multi-detector 222 . In this way, according to Embodiment 1, the secondary system can be imaged at the position of the intermediate aperture substrate 56 while maintaining the high resolution of the primary system (imaging on the substrate surface).

圖7是表示實施方式1與比較例中的多檢測器的檢測面上多二次電子束的射束直徑一例的圖。於所述比較例中，由於偏轉器218中的像差變大，因此多檢測器222的檢測面上多二次電子束300的各射束15的射束直徑變大。其結果，射束15彼此有可能如圖7所示般重疊。與此相對，根據實施方式1，可抑制偏轉器218中的像差，因此可減小多檢測器222的檢測面上多二次電子束300的各射束14的射束直徑。其結果，可避免如圖7所示般射束14彼此重疊。藉此，可於多檢測器222的位置使二次系統為高解析度（可達成檢測面上的分離）。7 is a diagram showing an example of beam diameters of multiple secondary electron beams on the detection surfaces of the multiple detectors in the first embodiment and the comparative example. In the comparative example, since the aberration in the deflector 218 increases, the beam diameter of each beam 15 of the multi-secondary electron beam 300 on the detection surface of the multi-detector 222 increases. As a result, the beams 15 may overlap each other as shown in FIG. 7 . On the other hand, according to Embodiment 1, since the aberration in the deflector 218 can be suppressed, the beam diameter of each beam 14 of the multi-secondary electron beam 300 on the detection surface of the multi-detector 222 can be reduced. As a result, the beams 14 can be prevented from overlapping each other as shown in FIG. 7 . Thereby, the secondary system can be made high-resolution at the position of the multi-detector 222 (separation of the detection surface can be achieved).

圖8A與圖8B是表示實施方式1中的基板上的圖案的SEM圖像一例與檢測面上多二次電子束的射束直徑一例的圖。於使多二次電子束300在中間孔徑基板56上成像的條件下，如圖8B所示般可知，於多檢測器222的檢測面上多二次電子束300經分離。進而，於實施方式1中，由於利用物鏡使一次電子束聚焦於基板上，因此如圖8A所示，可清晰地視認到圖案像。8A and 8B are diagrams showing an example of a SEM image of a pattern on a substrate in Embodiment 1 and an example of beam diameters of multiple secondary electron beams on a detection surface. Under the condition that the multiple secondary electron beams 300 are imaged on the intermediate aperture substrate 56 , as shown in FIG. 8B , the multiple secondary electron beams 300 are separated on the detection surface of the multi-detector 222 . Furthermore, in Embodiment 1, since the primary electron beam is focused on the substrate by the objective lens, the pattern image can be clearly seen as shown in FIG. 8A .

圖9是用於說明實施方式1中的偏轉器內的成像點的位置與射束直徑的關係的圖。像差依存於距光軸的離軸距離。產生的像差依存於最大離軸距離。於圖9的例子中，當於兩個偏轉器52、54的正中間點形成中間像面時，偏轉器內產生的距光軸的離軸距離最大為d。與此相對，例如當於第一段的偏轉器52的中間點附近形成中間像面時，偏轉器218內產生的距光軸的離軸距離最大會變為大於d的D'。因此，當於圖9所示的兩個偏轉器52、54的正中間點形成像面時，可使離軸距離最小。再者，減小各射束的擴散的情況可減小像差。因此，較佳為進行控制以使得於兩個偏轉器52、54的正中間點形成各二次電子束的中間像面而非多二次電子束300的交叉。9 is a diagram for explaining the relationship between the position of the imaging point in the deflector and the beam diameter in Embodiment 1. FIG. Aberrations depend on the off-axis distance from the optical axis. The resulting aberrations depend on the maximum off-axis distance. In the example of FIG. 9 , when the intermediate image plane is formed at the midpoint of the two deflectors 52 and 54 , the off-axis distance from the optical axis generated in the deflector is at most d. On the other hand, when the intermediate image plane is formed near the midpoint of the deflector 52 in the first stage, for example, the off-axis distance from the optical axis generated in the deflector 218 becomes at most D' greater than d. Therefore, when the image plane is formed at the midpoint of the two deflectors 52, 54 shown in FIG. 9, the off-axis distance can be minimized. Furthermore, reducing the spread of each beam can reduce aberrations. Therefore, it is preferable to control so that the intermediate image plane of each secondary electron beam is formed at the exact middle point of the two deflectors 52 , 54 rather than the intersection of the multiple secondary electron beams 300 .

於檢查裝置100中，例如以如下方式進行調整。 （1）暫時設定規定的加速電壓、延遲電壓、施加至靜電電極217的電壓、施加至E×B分離器的電壓及勵磁的電流、以及對物鏡勵磁的電流。 （2）對基板101上方的掃描線圈219進行掃描，並對E×B分離器的值進行調整，使得可於中間孔徑基板56檢測二次電子束的訊號。將於中間孔徑基板56檢測出的訊號輸出至檢測電路106B。於檢測電路106B內，利用未圖示的A/D轉換器將模擬的檢測資料轉換為數位資料，並例如輸出至比較電路108。藉此，可將中間孔徑基板56作為檢測器來取得像。 （3）使物鏡的值可變來調整多一次電子束20於基板101上的聚焦位置。 （4）擴大掃描線圈219的掃描範圍以使得可辨識出中間孔徑基板56的開口部55，並調整E×B分離器的值以使得開口部55位於掃描範圍的中央。自將中間孔徑基板56作為檢測器而獲得的像中可辨識出開口部55。 （5）對施加至靜電電極217的電壓進行調整，使得於中間孔徑基板56的開口部55形成中間像面。即，對施加至靜電電極217的電壓進行調整，使得開口部55的像變得鮮明。 （6）於大幅變更施加至靜電電極217的電壓的情況下，多一次電子束20的焦點位置會發生變化，因此再次重覆按照（2）～（5）的順序的調整，從而進行調整以使得多一次電子束20對焦於基板101上，且開口部55的像變得鮮明。換言之，重覆進行以下的一系列控制：變更施加至靜電電極217的電位，使多一次電子束20聚焦於基板101上；以及對施加至靜電電極217的電位進行調整，使得配置於偏轉器218內的中途的中間孔徑基板56上形成的開口部55的像變得清晰。另外，本調整例是以使開口部55的像變得鮮明的方式進行，但亦可對靜電電極217進行調整以使得二次射束300將焦點建立於多檢測器222上。 In the inspection apparatus 100, adjustment is performed as follows, for example. (1) Predetermined acceleration voltage, delay voltage, voltage applied to the electrostatic electrode 217 , voltage applied to the E×B separator, current for excitation, and current for excitation of the objective lens are temporarily set. (2) Scan the scanning coil 219 above the substrate 101 , and adjust the value of the E×B separator, so that the signal of the secondary electron beam can be detected on the intermediate aperture substrate 56 . The signal detected by the intermediate aperture substrate 56 is output to the detection circuit 106B. In the detection circuit 106B, an A/D converter (not shown) is used to convert the analog detection data into digital data and output to the comparison circuit 108, for example. Thereby, an image can be acquired using the intermediate aperture substrate 56 as a detector. (3) The value of the objective lens is changed to adjust the focus position of the multiple primary electron beams 20 on the substrate 101 . (4) The scanning range of the scanning coil 219 is enlarged so that the opening 55 of the intermediate aperture substrate 56 can be recognized, and the value of the E×B separator is adjusted so that the opening 55 is located in the center of the scanning range. The opening 55 can be recognized from an image obtained by using the intermediate aperture substrate 56 as a detector. (5) The voltage applied to the electrostatic electrode 217 is adjusted so that an intermediate image plane is formed in the opening 55 of the intermediate aperture substrate 56 . That is, the voltage applied to the electrostatic electrode 217 is adjusted so that the image of the opening portion 55 becomes clear. (6) In the case where the voltage applied to the electrostatic electrode 217 is greatly changed, the focal position of the electron beam 20 is changed once more. Therefore, the adjustment in the order of (2) to (5) is repeated again to perform the adjustment to The primary electron beam 20 is focused on the substrate 101, and the image of the opening 55 becomes clear. In other words, the following series of controls are repeated: changing the potential applied to the electrostatic electrode 217 so that the primary electron beam 20 is focused on the substrate 101 ; and adjusting the potential applied to the electrostatic electrode 217 so as to be arranged on the deflector 218 The image of the opening 55 formed in the intermediate aperture substrate 56 in the middle becomes clear. In addition, although this adjustment example is performed so that the image of the opening part 55 may become clear, the electrostatic electrode 217 may be adjusted so that the secondary beam 300 may focus on the multi-detector 222.

於如上所述般調整了電子光學系統的基礎上，進行被檢查基板的檢查處理。After adjusting the electron optical system as described above, the inspection process of the substrate to be inspected is performed.

圖10是表示實施方式1中的形成於半導體基板的多個晶片區域一例的圖。圖10中，於半導體基板（晶圓）101的檢查區域330，多個晶片（晶圓晶粒）332形成為二維的陣列狀。藉由未圖示的曝光裝置（步進機），將已形成於曝光用遮罩基板的一個晶片量的遮罩圖案例如縮小成1/4而轉印至各晶片332。10 is a diagram showing an example of a plurality of wafer regions formed on a semiconductor substrate in Embodiment 1. FIG. In FIG. 10 , in the inspection area 330 of the semiconductor substrate (wafer) 101 , a plurality of wafers (wafer dies) 332 are formed in a two-dimensional array. The mask pattern for one wafer that has been formed on the mask substrate for exposure is reduced to, for example, 1/4 and transferred to each wafer 332 by an exposure device (stepper) not shown.

圖11是用於說明實施方式1中的圖像取得處理的圖。如圖11所示，各晶片332的區域例如朝向y方向以規定的寬度分割成多個條紋區域32。由圖像取得機構150執行的掃描動作例如針對每一條紋區域32而實施。例如，一邊使平台105於-x方向上移動，一邊相對地於x方向上進行條紋區域32的掃描動作。各條紋區域32朝向長度方向被分割成多個矩形區域33。射束於作為對象的矩形區域33中的移動是藉由主偏轉器208執行的多一次電子束20整體的成批偏轉而進行。FIG. 11 is a diagram for explaining image acquisition processing in Embodiment 1. FIG. As shown in FIG. 11 , the region of each wafer 332 is divided into a plurality of stripe regions 32 with a predetermined width in the y direction, for example. The scanning operation performed by the image acquisition means 150 is performed for each stripe region 32 , for example. For example, while moving the stage 105 in the -x direction, the scanning operation of the striped area 32 is performed relative to the x direction. Each striped region 32 is divided into a plurality of rectangular regions 33 in the longitudinal direction. The movement of the beam in the rectangular area 33 as the object is performed by the batch deflection of the entire primary electron beam 20 by the main deflector 208 .

於圖11的例子中，例如示出了5×5行的多一次電子束20的情況。藉由多一次電子束20的一次照射而可照射的照射區域34由（基板101面上的多一次電子束20的x方向的射束間間距乘以x方向的射束數所得的x方向尺寸）×（基板101面上的多一次電子束20的y方向的射束間間距乘以y方向的射束數所得的y方向尺寸）來定義。照射區域34成為多一次電子束20的視場。而且，構成多一次電子束20的各一次電子束10照射至由自身的射束所在的x方向的射束間間距與y方向的射束間間距包圍的子照射區域29內，並於所述子照射區域29內進行掃描（掃描動作）。各一次電子束10負責互不相同的任一個子照射區域29。而且，各一次電子束10對負責子照射區域29內的相同位置進行照射。副偏轉器209（第一偏轉器）藉由使多一次電子束20成批偏轉，利用多一次電子束20於形成有圖案的基板101面上進行掃描。換言之，一次電子束10於子照射區域29內的移動是藉由由副偏轉器209執行的多一次電子束20整體的成批偏轉而進行。重覆所述動作，利用一個一次電子束10於一個子照射區域29內依次進行照射。In the example of FIG. 11 , for example, the case where there are more than one primary electron beam 20 in 5×5 rows is shown. The irradiated region 34 that can be irradiated by one more primary electron beam 20 irradiation is the x-direction size obtained by multiplying the x-direction beam spacing of the multiple primary electron beams 20 on the substrate 101 surface by the number of x-direction beams )×(the dimension in the y direction obtained by multiplying the inter-beam spacing in the y direction of the plurality of primary electron beams 20 on the surface of the substrate 101 by the number of beams in the y direction). The irradiation area 34 becomes the field of view of the primary electron beam 20 . Then, each primary electron beam 10 constituting the plurality of primary electron beams 20 is irradiated into the sub-irradiation area 29 surrounded by the inter-beam spacing in the x-direction and the inter-beam spacing in the y-direction where its own beam is located, and is Scanning is performed in the sub-irradiation region 29 (scanning operation). Each primary electron beam 10 is responsible for any one of the sub-irradiation regions 29 that are different from each other. Then, each primary electron beam 10 irradiates the same position in the responsible sub-irradiation region 29 . The sub deflector 209 (first deflector) deflects the multiple primary electron beams 20 in a batch, and scans the patterned substrate 101 surface with the multiple primary electron beams 20 . In other words, the movement of the primary electron beam 10 in the sub-irradiation area 29 is performed by the batch deflection of the entire primary electron beam 20 performed by the sub-deflector 209 . By repeating the above-described operations, one primary electron beam 10 is sequentially irradiated in one sub-irradiation region 29 .

各條紋區域32的寬度較佳為設定成與照射區域34的y方向尺寸相同、或者較照射區域34的y方向尺寸窄了掃描裕度量的尺寸。於圖11的例子中，示出了照射區域34與矩形區域33為相同尺寸的情況。但是，並不限於此。照射區域34亦可小於矩形區域33。或者亦可大於矩形區域33。而且，構成多一次電子束20的各一次電子束10照射至自身的射束所在的子照射區域29內，並於所述子照射區域29內進行掃描（掃描動作）。而且，若一個子照射區域29的掃描結束，則照射位置藉由由主偏轉器208執行的多一次電子束20整體的成批偏轉而朝相同條紋區域32內的鄰接的矩形區域33移動。重覆所述動作而於條紋區域32內依次進行照射。若一個條紋區域32的掃描結束，則照射區域34藉由平台105的移動或/及由主偏轉器208執行的多一次電子束20整體的成批偏轉而朝下一條紋區域32移動。如以上所述般藉由各一次電子束10的照射而進行每一子照射區域29的掃描動作及二次電子圖像的取得。藉由組合所述每一子照射區域29的二次電子圖像，而構成矩形區域33的二次電子圖像、條紋區域32的二次電子圖像、或者晶片332的二次電子圖像。另外，於實際進行圖像比較的情況下，將各矩形區域33內的子照射區域29進一步分割為多個圖框區域30，對作為每一圖框區域30的測定圖像的圖框圖像31進行比較。於圖11的例子中，示出了將由一個一次電子束10掃描的子照射區域29分割成例如藉由在x方向、y方向上分別分割成兩部分而形成的四個圖框區域30的情況。The width of each stripe region 32 is preferably set to be the same as the y-direction dimension of the irradiation region 34 , or smaller than the y-direction dimension of the irradiation region 34 by a scan margin. In the example of FIG. 11, the case where the irradiation area|region 34 and the rectangular area|region 33 are the same size is shown. However, it is not limited to this. The irradiation area 34 may also be smaller than the rectangular area 33 . Alternatively, it can also be larger than the rectangular area 33 . Then, each primary electron beam 10 constituting the plurality of primary electron beams 20 is irradiated into the sub-irradiation region 29 where its own beam is located, and the sub-irradiation region 29 is scanned (scanning operation). Then, when scanning of one sub-irradiation area 29 is completed, the irradiation position is moved toward the adjacent rectangular area 33 in the same stripe area 32 by the batch deflection of the entire primary electron beam 20 by the main deflector 208 . The above-described operation is repeated to sequentially irradiate the stripe region 32 . When the scanning of one stripe area 32 is completed, the irradiation area 34 is moved toward the next stripe area 32 by the movement of the stage 105 or/and the bulk deflection of the primary electron beam 20 performed by the main deflector 208 . As described above, the scanning operation for each sub-irradiation region 29 and the acquisition of the secondary electron image are performed by the irradiation of each primary electron beam 10 . By combining the secondary electron images of each of the sub-irradiation areas 29 , the secondary electron image of the rectangular area 33 , the secondary electron image of the striped area 32 , or the secondary electron image of the wafer 332 is constituted. In addition, when the image comparison is actually performed, the sub-irradiation area 29 in each rectangular area 33 is further divided into a plurality of frame areas 30, and the frame images that are the measurement images for each frame area 30 are compared. 31 for comparison. In the example of FIG. 11, the case where the sub-irradiation area 29 scanned by one primary electron beam 10 is divided into four frame areas 30 formed by dividing into two parts in the x-direction and the y-direction, for example, is shown. .

此處，於一邊使平台105連續移動一邊將多一次電子束20照射至基板101的情況下，以多一次電子束20的照射位置追隨平台105的移動的方式進行由主偏轉器208進行成批偏轉而實施的追蹤動作。因此，多二次電子束300的放出位置相對於多一次電子束20的軌道中心軸而時刻變化。同樣地，當於子照射區域29內進行掃描時，各二次電子束的放出位置於子照射區域29內時刻變化。例如偏轉器226使多二次電子束300成批偏轉，以使如此般放出位置已變化的各二次電子束照射至多檢測器222的對應的檢測區域內。亦可與偏轉器226分開地於二次電子光學系統內配置對準線圈等，來修正所述放出位置的變化。Here, in the case of irradiating the substrate 101 with one more electron beam 20 while continuously moving the stage 105 , batch processing by the main deflector 208 is performed so that the irradiation position of the one more electron beam 20 follows the movement of the stage 105 . Tracking action performed by deflection. Therefore, the emission position of the multi-secondary electron beam 300 changes from time to time with respect to the orbital center axis of the multi-primary electron beam 20 . Similarly, when scanning is performed in the sub-irradiation region 29 , the emission positions of the respective secondary electron beams change over time in the sub-irradiation region 29 . For example, the deflector 226 deflects the multiple secondary electron beams 300 in batches so that the respective secondary electron beams whose emission positions have been changed in this way are irradiated into the corresponding detection regions of the multiple detectors 222 . An alignment coil or the like may be disposed in the secondary electron optical system separately from the deflector 226 to correct the change in the discharge position.

圖像取得機構150以如上方式於每一條紋區域32中推進掃描動作。如上所述般照射多一次電子束20，因多一次電子束20的照射而自基板101放出的多二次電子束300於偏轉器218內形成中間像面，並且被偏轉器218偏轉，然後被多檢測器222檢測。所檢測的多二次電子束300中可包含反射電子。或者，反射電子可於在二次電子光學系統中移動的過程中發散而未到達多檢測器222。而且，使用檢測出的多二次電子束300的訊號來取得二次電子圖像。具體而言，利用多檢測器222檢測出的各子照射區域29內的每一畫素的二次電子的檢測資料（測定圖像資料：二次電子圖像資料：被檢查圖像資料）按照測定順序被輸出至檢測電路106A。於檢測電路106A內，利用未圖示的A/D轉換器將模擬的檢測資料轉換為數位資料，並保存於晶片圖案記憶體123中。而且，所獲得的測定圖像資料與來自位置電路107的表示各位置的資訊一起被轉送至比較電路108。The image acquisition mechanism 150 advances the scanning action in each stripe region 32 as described above. The multiple primary electron beam 20 is irradiated as described above, and the multiple secondary electron beam 300 emitted from the substrate 101 by the irradiation of the multiple primary electron beam 20 forms an intermediate image plane in the deflector 218, is deflected by the deflector 218, and is then Multi-detector 222 detects. The detected multiple secondary electron beams 300 may contain reflected electrons. Alternatively, the reflected electrons may diverge without reaching the multi-detector 222 during travel in the secondary electron optical system. Then, a secondary electron image is acquired using the detected signals of the multiple secondary electron beams 300 . Specifically, the detection data (measurement image data: secondary electron image data: image data to be inspected) of secondary electrons for each pixel in each sub-irradiation area 29 detected by the multi-detector 222 are based on The measurement sequence is output to the detection circuit 106A. In the detection circuit 106A, an A/D converter not shown is used to convert the analog detection data into digital data, and store the data in the chip pattern memory 123 . Then, the obtained measurement image data is transferred to the comparison circuit 108 together with the information indicating each position from the position circuit 107 .

另一方面，參照圖像製作電路112基於成為形成於基板101的多個圖形圖案的基礎的設計資料，針對每一圖框區域30，製作與圖框圖像31對應的參照圖像。具體而言，以如下方式運作。首先，經由控制計算機110而自儲存裝置109讀出設計圖案資料，將由經讀出的所述設計圖案資料定義的各圖形圖案轉換成二值或多值的影像資料。On the other hand, the reference image creation circuit 112 creates a reference image corresponding to the frame image 31 for each frame area 30 based on the design data serving as the basis of the plurality of graphic patterns formed on the substrate 101 . Specifically, it operates as follows. First, the design pattern data is read out from the storage device 109 via the control computer 110, and each graphic pattern defined by the read design pattern data is converted into binary or multi-valued image data.

如上所述般，由設計圖案資料定義的圖形例如將長方形或三角形作為基本圖形，例如，保存有如下圖形資料：利用圖形的基準位置的座標（x、y）、邊的長度、作為對長方形或三角形等圖形種類進行區分的識別符的圖形碼等資訊，對各圖案圖形的形狀、大小、位置等進行了定義。As described above, the figure defined by the design pattern data uses, for example, a rectangle or a triangle as a basic figure, and for example, the following figure data are stored: using the coordinates (x, y) of the reference position of the figure, the length of the side, as a pair of rectangle or Information such as a graphic code of an identifier for distinguishing types of figures such as a triangle defines the shape, size, position, etc. of each pattern figure.

若作為所述圖形資料的設計圖案資料被輸入至參照圖像製作電路112，則展開至每一圖形的資料為止，並對該圖形資料的表示圖形形狀的圖形碼、圖形尺寸等進行解釋。而且，作為配置於以規定的量子化尺寸的格子（grid）為單位的柵格內的圖案，展開成二值或多值的設計圖案圖像資料並予以輸出。換言之，讀入設計資料，在將檢查區域設為以規定的尺寸為單位的柵格來進行假想分割而成的每一柵格中，演算設計圖案中的圖形所佔的佔有率，並輸出n位元的佔有率資料。例如，較佳為將一個柵格設定為一個畫素。而且，若使一個畫素具有1/2 8（=1/256）的解析度，則與配置於畫素內的圖形的區域量相應地分配1/256的小區域並演算畫素內的佔有率。而且，形成8位元的佔有率資料。所述柵格（檢查畫素）只要與測定資料的畫素一致即可。 When the design pattern data as the graphic data is input to the reference image creation circuit 112, it expands to the data of each graphic, and interprets the graphic code representing the graphic shape, the graphic size, and the like of the graphic data. Then, as a pattern arranged in a grid with a predetermined quantization size grid as a unit, it is developed into binary or multi-valued design pattern image data and output. In other words, the design data is read, and the occupancy rate of the figure in the design pattern is calculated for each grid in which the inspection area is divided into grids of predetermined size units, and n is output. Bit share data. For example, it is preferable to set one grid to one pixel. Furthermore, if one pixel has a resolution of 1/2 8 (=1/256), a small area of 1/256 is allocated in accordance with the area amount of the graphics arranged in the pixel, and the occupation in the pixel is calculated. Rate. Furthermore, occupancy data of 8 bits are formed. The grid (checking pixel) only needs to match the pixels of the measurement data.

接著，參照圖像製作電路112對作為圖形的影像資料的設計圖案的設計圖像資料，使用規定的濾波函數實施濾波處理。藉此，可使作為圖像強度（濃淡值）為數位值的設計側的影像資料的設計圖像資料符合藉由多一次電子束20的照射而獲得的像生成特性。製作而成的參照圖像的每一畫素的圖像資料被輸出至比較電路108。Next, the reference image creation circuit 112 performs filtering processing using a predetermined filter function on the design image data, which is the design pattern of the video data of the graphics. Thereby, the design image data, which is the image data on the design side where the image intensity (shade value) is a digital value, can be made to conform to the image generation characteristics obtained by irradiating the electron beam 20 one more time. The image data for each pixel of the created reference image is output to the comparison circuit 108 .

於比較電路108內，針對每一圖框區域30，以子畫素為單位對作為被檢查圖像的圖框圖像31（第一圖像）與該圖框圖像所對應的參照圖像（第二圖像）進行對位。例如，可利用最小平方法進行對位。In the comparison circuit 108, for each frame area 30, the frame image 31 (the first image) serving as the image to be inspected and the reference image corresponding to the frame image are compared in units of sub-pixels. (Second image) for alignment. For example, the alignment can be performed using the least squares method.

然後，比較電路108對圖框圖像31（第一圖像）與參照圖像（第二圖像）進行比較。比較電路108針對每一畫素36，按照規定的判定條件對兩者進行比較，並判定有無例如形狀缺陷等缺陷。例如，若每一畫素36的灰階值差較判定臨限值Th大，則判定為缺陷。然後，輸出比較結果。比較結果被輸出至儲存裝置109、監視器117、或記憶體118，或者只要自列印機119輸出即可。Then, the comparison circuit 108 compares the frame image 31 (the first image) with the reference image (the second image). The comparison circuit 108 compares the two in accordance with predetermined determination conditions for each pixel 36, and determines the presence or absence of defects such as shape defects. For example, if the grayscale value difference of each pixel 36 is larger than the determination threshold value Th, it is determined as a defect. Then, output the comparison result. The comparison result is output to the storage device 109 , the monitor 117 , or the memory 118 , or only from the printer 119 .

再者，除了上述晶粒-資料庫檢查之外，亦較佳為進行將拍攝同一基板上的不同地方的同一圖案所得的測定圖像資料彼此進行比較的晶粒-晶粒（die to die）檢查。或者，亦可僅使用自身的測定圖像進行檢查。Furthermore, in addition to the above-mentioned die-to-database inspection, it is also preferable to perform a die-to-die method in which measurement image data obtained by photographing the same pattern at different places on the same substrate are compared with each other. examine. Alternatively, inspection can be performed using only its own measurement image.

如上所述，根據實施方式1，可將照射至基板面的一次電子束的射束直徑收縮得小，並且可於檢測面分離多二次電子束的各二次電子束。As described above, according to the first embodiment, the beam diameter of the primary electron beam irradiated to the substrate surface can be reduced, and each secondary electron beam of the multiple secondary electron beams can be separated on the detection surface.

於以上的說明中，一系列的「～電路」包含處理電路，所述處理電路包含電性回路、電腦、處理器、電路基板、量子電路、或半導體裝置等。另外，各「～電路」亦可使用共同的處理電路（同一個處理電路）。或者，亦可使用不同的處理電路（各自不同的處理電路）。使處理器等執行的程式只要被記錄於磁碟裝置、磁帶裝置、軟性磁碟（Flexible Disk，FD）、或唯讀記憶體（Read Only Memory，ROM）等記錄介質即可。例如，位置電路107、比較電路108、及參照圖像製作電路112等亦可包含上述至少一個處理電路。In the above description, a series of "-circuits" include processing circuits including electrical circuits, computers, processors, circuit substrates, quantum circuits, or semiconductor devices, and the like. In addition, each "-circuit" may use a common processing circuit (the same processing circuit). Alternatively, different processing circuits (each different processing circuit) may be used. The program to be executed by the processor or the like may be recorded on a recording medium such as a magnetic disk device, a magnetic tape device, a flexible disk (FD), or a read only memory (ROM). For example, the position circuit 107 , the comparison circuit 108 , the reference image generation circuit 112 and the like may also include at least one processing circuit described above.

以上，一邊參照具體例一邊對實施方式進行了說明。但是，本發明並不限定於該些具體例。The embodiments have been described above with reference to specific examples. However, the present invention is not limited to these specific examples.

另外，省略了對裝置結構或控制手法等於本發明的說明中不直接需要的部分等的記載，但可適宜選擇使用必要的裝置結構或控制手法。In addition, description of the device configuration and control method which are not directly necessary in the description of the present invention is omitted, but the necessary device configuration or control method can be appropriately selected and used.

此外，包括本發明的要素、且本領域從業人員可適宜進行設計變更的所有多電子束圖像取得裝置及多電子束圖像取得方法包含於本發明的範圍內。 [產業上之可利用性] In addition, all multi-electron-beam image acquisition apparatuses and multi-electron-beam image acquisition methods that include the elements of the present invention and whose designs can be appropriately changed by those skilled in the art are included in the scope of the present invention. [Industrial Availability]

本發明是有關於一種多射束圖像取得裝置及多射束圖像取得方法。例如，可用於使用起因於多一次電子束的照射的二次電子圖像來進行圖案檢查的多射束檢查裝置的圖像取得手法。The present invention relates to a multi-beam image acquisition device and a multi-beam image acquisition method. For example, it can be used as an image acquisition method for a multi-beam inspection apparatus that performs pattern inspection using a secondary electron image resulting from the irradiation of multiple primary electron beams.

10、21:一次電子束 14、15:射束 20:多一次電子束（多射束） 22:孔（開口部） 29:子照射區域 30:圖框區域 31:圖框圖像 32:條紋區域 33:矩形區域 34:照射區域 52:偏轉器（第一偏轉器） 54:偏轉器（第二偏轉器） 55:開口部 56:中間孔徑基板（孔徑基板） 100:檢查裝置 101:基板（晶圓） 102:電子束柱 103:檢查室 105:平台 106A、106B:檢測電路 107:位置電路 108:比較電路 109:儲存裝置 110:控制計算機 112:參照圖像製作電路 114:平台控制電路 117:監視器 118:記憶體 119:列印機 120:匯流排 122:雷射測長系統 123:晶片圖案記憶體 124:透鏡控制電路 126:遮蔽控制電路 128:偏轉控制電路 130:延遲控制電路 132:電極控制電路 142:平台驅動機構（驅動機構） 144、146、148:DAC放大器 150:圖像取得機構 151:一次電子光學系統 152:二次電子光學系統 160:控制系統電路 200:電子束 201:電子槍 202:電磁透鏡（照明透鏡） 203:成形孔徑陣列基板 205、206:電磁透鏡 207:電磁透鏡（磁透鏡、物鏡） 208:主偏轉器 209:副偏轉器 212:成批偏轉器 213:限制孔徑基板 214:射束分離器 216:反射鏡 217:靜電電極 218:偏轉器 219:掃描線圈 222:多檢測器 224:投影透鏡（電磁透鏡、磁透鏡） 226:偏轉器 300:多二次電子束（二次射束） 301:二次電子束（中心二次電子束） 330:檢查區域 332:晶片（晶圓晶粒） 600、602:中間像面 601:中間像面（像面） d、D':離軸距離 D1:射束直徑 x、y:方向 10, 21: Primary electron beam 14, 15: Beam 20: One more electron beam (multi-beam) 22: Hole (opening) 29: Sub-irradiation area 30: Frame area 31: Framed Image 32: Striped area 33: Rectangular area 34: Irradiation area 52: Deflector (first deflector) 54: Deflector (second deflector) 55: Opening 56: Intermediate aperture substrate (aperture substrate) 100: Inspection device 101: Substrate (wafer) 102: Electron beam column 103: Exam Room 105: Platform 106A, 106B: detection circuit 107: Position Circuit 108: Comparison circuit 109: Storage Device 110: Control computer 112: Reference image production circuit 114: Platform control circuit 117: Monitor 118: Memory 119: Printer 120: Busbar 122: Laser Length Measuring System 123: Chip Pattern Memory 124: Lens Control Circuit 126: Shading control circuit 128: deflection control circuit 130: Delay control circuit 132: Electrode control circuit 142: Platform drive mechanism (drive mechanism) 144, 146, 148: DAC amplifiers 150: Image acquisition mechanism 151: Primary Electron Optical System 152: Secondary Electron Optical Systems 160: Control system circuit 200: electron beam 201: Electron Gun 202: Electromagnetic lens (illumination lens) 203: Formed Aperture Array Substrate 205, 206: Electromagnetic lens 207: Electromagnetic lens (magnetic lens, objective lens) 208: Main Deflector 209: Secondary deflector 212: Bulk Deflectors 213: Restricted Aperture Substrate 214: Beam Splitter 216: Reflector 217: Electrostatic electrode 218: Deflector 219: Scan Coil 222: Multi-Detector 224: Projection lens (electromagnetic lens, magnetic lens) 226: Deflector 300: Multiple secondary electron beams (secondary beams) 301: Secondary electron beam (center secondary electron beam) 330: Inspection area 332: Wafer (Wafer Die) 600, 602: Intermediate image plane 601: Intermediate image surface (image surface) d, D': off-axis distance D1: Beam diameter x, y: direction

圖1是表示實施方式1中的圖案檢查裝置的結構的結構圖。 圖2是表示實施方式1中的成形孔徑陣列基板的結構的概念圖。 圖3是表示實施方式1與比較例中的中心射束的軌道一例的圖。 圖4是表示實施方式1的比較例中的多二次電子束的軌道一例的圖。 圖5是表示實施方式1中的多二次電子束的軌道一例的圖。 圖6A是表示實施方式1中的電子束的軌道的模擬結果一例的圖。 圖6B是表示實施方式1中的電子束的軌道的模擬結果一例的圖。 圖6C是表示實施方式1中的電子束的軌道的模擬結果一例的圖。 圖7是表示實施方式1與比較例中的多檢測器的檢測面上多二次電子束的射束直徑一例的圖。 圖8A是表示實施方式1中的基板上的圖案的掃描式電子顯微鏡（scanning electron microscope，SEM）圖像一例與檢測面上多二次電子束的射束直徑一例的圖。 圖8B是表示實施方式1中的基板上的圖案的SEM圖像一例與檢測面上多二次電子束的射束直徑一例的圖。 圖9是用於說明實施方式1中的偏轉器內的成像點的位置與射束直徑的關係的圖。 圖10是表示實施方式1中的形成於半導體基板的多個晶片區域一例的圖。 圖11是用於說明實施方式1中的圖像取得處理的圖。 FIG. 1 is a configuration diagram showing the configuration of a pattern inspection apparatus in Embodiment 1. FIG. FIG. 2 is a conceptual diagram showing the structure of the formed aperture array substrate in Embodiment 1. FIG. FIG. 3 is a diagram showing an example of a trajectory of a center beam in Embodiment 1 and a comparative example. FIG. 4 is a diagram showing an example of the trajectory of the multiple secondary electron beams in the comparative example of Embodiment 1. FIG. FIG. 5 is a diagram showing an example of the trajectory of the multiple secondary electron beam in Embodiment 1. FIG. 6A is a diagram showing an example of a simulation result of the trajectory of the electron beam in Embodiment 1. FIG. 6B is a diagram showing an example of a simulation result of the trajectory of the electron beam in Embodiment 1. FIG. 6C is a diagram showing an example of a simulation result of the trajectory of the electron beam in Embodiment 1. FIG. 7 is a diagram showing an example of beam diameters of multiple secondary electron beams on the detection surfaces of the multiple detectors in the first embodiment and the comparative example. 8A is a diagram showing an example of a scanning electron microscope (SEM) image of a pattern on a substrate in Embodiment 1 and an example of beam diameters of multiple secondary electron beams on a detection surface. 8B is a diagram showing an example of a SEM image of a pattern on a substrate in Embodiment 1 and an example of beam diameters of multiple secondary electron beams on a detection surface. 9 is a diagram for explaining the relationship between the position of the imaging point in the deflector and the beam diameter in Embodiment 1. FIG. 10 is a diagram showing an example of a plurality of wafer regions formed on a semiconductor substrate in Embodiment 1. FIG. FIG. 11 is a diagram for explaining image acquisition processing in Embodiment 1. FIG.

20:多一次電子束 20: One more electron beam

100:檢查裝置 100: Inspection device

101:基板(晶圓) 101: Substrate (wafer)

102:電子束柱 102: Electron beam column

103:檢查室 103: Exam Room

105:平台 105: Platform

106A、106B:檢測電路 106A, 106B: detection circuit

107:位置電路 107: Position Circuit

108:比較電路 108: Comparison circuit

109:儲存裝置 109: Storage Device

110:控制計算機 110: Control computer

112:參照圖像製作電路 112: Reference image production circuit

114:平台控制電路 114: Platform control circuit

117:監視器 117: Monitor

118:記憶體 118: Memory

119:列印機 119: Printer

120:匯流排 120: Busbar

122:雷射測長系統 122: Laser Length Measuring System

123:晶片圖案記憶體 123: Chip Pattern Memory

124:透鏡控制電路 124: Lens Control Circuit

126:遮蔽控制電路 126: Shading control circuit

128:偏轉控制電路 128: deflection control circuit

130:延遲控制電路 130: Delay control circuit

132:電極控制電路 132: Electrode control circuit

142:平台驅動機構(驅動機構) 142: Platform drive mechanism (drive mechanism)

144、146、148:DAC放大器 144, 146, 148: DAC amplifiers

150:圖像取得機構 150: Image acquisition mechanism

151:一次電子光學系統 151: Primary Electron Optical System

152:二次電子光學系統 152: Secondary Electron Optical Systems

160:控制系統電路 160: Control system circuit

200:電子束 200: electron beam

201:電子槍 201: Electron Gun

202:電磁透鏡(照明透鏡) 202: Electromagnetic Lens (Illumination Lens)

203:成形孔徑陣列基板 203: Formed Aperture Array Substrate

205、206:電磁透鏡 205, 206: Electromagnetic lens

207:電磁透鏡(磁透鏡) 207: Electromagnetic Lens (Magnetic Lens)

208:主偏轉器 208: Main Deflector

209:副偏轉器 209: Secondary deflector

212:成批偏轉器 212: Bulk Deflectors

213:限制孔徑基板 213: Restricted Aperture Substrate

214:射束分離器 214: Beam Splitter

216:反射鏡 216: Reflector

217:靜電電極 217: Electrostatic electrode

218:偏轉器 218: Deflector

219:掃描線圈 219: Scan Coil

222:多檢測器 222: Multi-Detector

224:投影透鏡(電磁透鏡、磁透鏡) 224: Projection lens (electromagnetic lens, magnetic lens)

226:偏轉器 226: Deflector

300:多二次電子束 300: Multiple secondary electron beams

Claims (10)

一種多射束圖像取得裝置，包括： 平台，載置基板； 物鏡，利用多一次電子束照射所述基板； 分離器，具有形成電場的兩極以上的電極以及形成磁場的兩極以上的磁極，且使用所述電場以及所述磁場，將因利用所述多一次電子束照射所述基板而放出的多二次電子束自所述多一次電子束的軌道上分離； 偏轉器，使分離出的所述多二次電子束偏轉； 檢測器，檢測經偏轉的所述多二次電子束； 靜電電極，配置於所述物鏡的主面與所述基板之間；以及 控制電路，將所述物鏡控制為所述多一次電子束對焦於所述基板上的狀態下，對所述靜電電極進行控制，使得於所述物鏡的主面與所述基板之間形成一次以上的所述多二次電子束的成像點，並且於所述偏轉器內的中途形成所述多二次電子束的成像點。 A multi-beam image acquisition device, comprising: platform, on which the substrate is placed; an objective lens that irradiates the substrate with one more electron beam; A separator having two or more electrodes for forming an electric field and two or more magnetic poles for forming a magnetic field, and using the electric field and the magnetic field to separate multiple secondary electrons emitted by irradiating the substrate with the multiple primary electron beams beams are separated from the orbits of the plurality of primary electron beams; a deflector to deflect the separated multiple secondary electron beams; a detector to detect the deflected plurality of secondary electron beams; an electrostatic electrode, disposed between the main surface of the objective lens and the substrate; and A control circuit controls the objective lens so that the plurality of primary electron beams are focused on the substrate, and controls the electrostatic electrode so that more than one formation is formed between the principal surface of the objective lens and the substrate The imaging point of the multiple secondary electron beams is formed, and the imaging point of the multiple secondary electron beams is formed in the middle of the deflector. 如請求項1所述的多射束圖像取得裝置，其中， 所述偏轉器具有： 第一偏轉器，使所述多二次電子束偏轉；以及 第二偏轉器，使通過了所述第一偏轉器的所述多二次電子束進一步偏轉，且所述第二偏轉器配置於自所述第一偏轉器的配置方向傾斜的方向。 The multi-beam image acquisition device according to claim 1, wherein, The deflector has: a first deflector to deflect the multiple secondary electron beams; and A second deflector further deflects the multiple secondary electron beams that have passed through the first deflector, and the second deflector is arranged in a direction inclined from the arrangement direction of the first deflector. 如請求項2所述的多射束圖像取得裝置，更包括： 孔徑基板，所述孔徑基板配置於所述第一偏轉器與所述第二偏轉器之間，且形成有開口部， 所述控制電路對所述靜電電極進行控制，使得於所述偏轉器內的中途的所述孔徑基板的位置形成所述多二次電子束的成像點。 The multi-beam image acquisition device according to claim 2, further comprising: an aperture substrate, the aperture substrate is disposed between the first deflector and the second deflector, and an opening is formed, The control circuit controls the electrostatic electrode so that an imaging spot of the multiple secondary electron beams is formed at a position of the aperture substrate in the middle of the deflector. 如請求項1所述的多射束圖像取得裝置，其中， 所述控制電路對所述靜電電極施加負電位。 The multi-beam image acquisition device according to claim 1, wherein, The control circuit applies a negative potential to the electrostatic electrode. 如請求項3所述的多射束圖像取得裝置，其中， 所述控制電路變更施加至所述靜電電極的電位，並於進行了變更的狀態下將所述物鏡控制為所述多一次電子束對焦於所述基板上的狀態下，對施加至所述靜電電極的電位進行調整，使得形成於所述孔徑基板上的所述開口部的像變得清晰。 The multi-beam image acquisition device according to claim 3, wherein: The control circuit changes the potential applied to the electrostatic electrode, and controls the objective lens so that the plurality of primary electron beams are focused on the substrate in the changed state, and controls the electric potential applied to the electrostatic electrode. The potential of the electrode is adjusted so that the image of the opening formed in the aperture substrate becomes clear. 如請求項2所述的多射束圖像取得裝置，更包括： 孔徑基板，所述孔徑基板配置於所述偏轉器內的中途，且形成有開口部， 所述控制電路對所述靜電電極進行控制，使得於所述孔徑基板的位置形成所述多二次電子束的成像點。 The multi-beam image acquisition device according to claim 2, further comprising: an aperture substrate, wherein the aperture substrate is disposed in the middle of the deflector and has an opening portion formed thereon, The control circuit controls the electrostatic electrodes so that imaging spots of the multiple secondary electron beams are formed at the positions of the aperture substrate. 一種多射束圖像取得方法，其中， 使用物鏡，利用多一次電子束照射載置於平台上的基板， 使用具有形成電場的兩極以上的電極以及形成磁場的兩極以上的磁極的分離器，使用所述電場以及所述磁場，將因利用所述多一次電子束照射所述基板而放出的多二次電子束自所述多一次電子束的軌道上分離， 使用偏轉器，使分離出的所述多二次電子束偏轉， 利用檢測器檢測經偏轉的所述多二次電子束，使用檢測出的所述多二次電子束的訊號取得二次電子圖像並輸出， 將所述物鏡控制為所述多一次電子束對焦於所述基板上的狀態下，使用配置於所述物鏡的主面與所述基板之間的靜電電極，對所述多二次電子束的軌道進行控制，使得於所述物鏡的主面與所述基板之間形成一次以上的所述多二次電子束的成像點，並且於所述偏轉器內的中途形成所述多二次電子束的成像點。 A multi-beam image acquisition method, wherein, Using the objective lens, the substrate placed on the stage is irradiated with one more electron beam, Using a separator having two or more electrodes for forming an electric field and two or more magnetic poles for forming a magnetic field, and using the electric field and the magnetic field, multiple secondary electrons emitted by irradiating the substrate with the multiple primary electron beams are separated beams are separated from the orbits of the multiple primary electron beams, Using a deflector, the separated multiple secondary electron beams are deflected, The deflected multiple secondary electron beams are detected by a detector, and a secondary electron image is obtained and output by using the detected signals of the multiple secondary electron beams, In a state where the objective lens is controlled so that the multiple primary electron beams are focused on the substrate, an electrostatic electrode disposed between the main surface of the objective lens and the substrate is used to control the multiple secondary electron beams. Orbits are controlled so that the imaging point of the multiple secondary electron beams is formed more than once between the main surface of the objective lens and the substrate, and the multiple secondary electron beams are formed in the middle of the deflector. imaging point. 如請求項7所述的多射束圖像取得方法，其中， 重覆進行以下的一系列控制：變更施加至所述靜電電極的電位而使一次電子束聚焦於所述基板上、以及對施加至所述靜電電極的電位進行調整以使得配置於所述偏轉器內的中途的孔徑基板上所形成的開口部的像變得清晰。 The multi-beam image acquisition method according to claim 7, wherein, A series of controls of changing the potential applied to the electrostatic electrode to focus the primary electron beam on the substrate, and adjusting the potential applied to the electrostatic electrode so as to be arranged on the deflector are repeated. The image of the opening formed in the aperture substrate in the middle becomes clear. 如請求項7所述的多射束圖像取得方法，其中， 於所述偏轉器內的中途配置形成有開口部的孔徑基板， 對所述多二次電子束的軌道進行控制，使得於所述孔徑基板的位置形成所述多二次電子束的成像點。 The multi-beam image acquisition method according to claim 7, wherein, An aperture substrate having an opening formed in the middle of the deflector is arranged, The orbits of the multiple secondary electron beams are controlled so that imaging spots of the multiple secondary electron beams are formed at the positions of the aperture substrate. 如請求項7所述的多射束圖像取得方法，其中， 所述偏轉器具有： 第一偏轉器，使所述多二次電子束偏轉；以及 第二偏轉器，與所述所述第一偏轉器鄰接，且所述第二偏轉器配置於自所述第一偏轉器的配置方向傾斜的方向， 使用所述第二偏轉器，使通過了所述第一偏轉器的所述多二次電子束進一步偏轉。 The multi-beam image acquisition method according to claim 7, wherein, The deflector has: a first deflector to deflect the multiple secondary electron beams; and a second deflector adjacent to the first deflector, and the second deflector is arranged in a direction inclined from the arrangement direction of the first deflector, Using the second deflector, the multiple secondary electron beams that have passed through the first deflector are further deflected.
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