TW202225858A - Storage device, exposure device, and article manufacturing method which accommodates an original plate including the pattern surface on which the pattern is formed and has low humidity for the storage space - Google Patents

Storage device, exposure device, and article manufacturing method which accommodates an original plate including the pattern surface on which the pattern is formed and has low humidity for the storage space Download PDF

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TW202225858A
TW202225858A TW110138110A TW110138110A TW202225858A TW 202225858 A TW202225858 A TW 202225858A TW 110138110 A TW110138110 A TW 110138110A TW 110138110 A TW110138110 A TW 110138110A TW 202225858 A TW202225858 A TW 202225858A
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airflow
original plate
supply part
gas
storage device
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TW110138110A
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TWI841869B (en
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藤野康平
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日商佳能股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

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  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Library & Information Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention provides a storage device which accommodates an original plate including the pattern surface on which the pattern is formed, and includes: a first supply unit which blows and supplies gas to form airflow of at least one of a first airflow and a second airflow, wherein the first airflow is along the first surface of the original plate opposite to the pattern surface and the second airflow is along the second surface opposite to the pattern surface of the protective member, and the protective member is configured as being away from the pattern surface to protect the pattern surface; a second supply unit which blows and supplies gas to form a third airflow that interferes with at least one airflow formed by the first supply unit; and a member including a receiving surface that intersects the blowing direction of the gas blown from the second supply unit and is used to receive the third airflow formed by the second supply unit, wherein the first supply unit is arranged close to the deep side of the storage space in which the original plate is accommodated with reference to the conveyance port for conveying the original plate, and the second supply unit is arranged close to the front side of the storage space with respect to the conveyance port.

Description

收納裝置、曝光裝置及物品的製造方法Storage device, exposure device, and manufacturing method of articles

本發明有關收納裝置、曝光裝置及物品的製造方法。The present invention relates to a storage device, an exposure device, and a method for manufacturing an article.

在半導體元件或液晶顯示元件的製造工序(光刻(Lithography)工序)中，使用了將原版(遮罩(mask)或者標線片(Reticle))的圖案向配置有抗蝕材料的基板(晶圓)投影而在基板上轉印(形成)圖案的曝光裝置。在曝光裝置中，當將原版的圖案向基板上投影時，即在基板曝光時，若在原版上有異物等存在，則該異物會連同圖案一起被轉印到基板上而成為缺陷(不良)的原因。 因而，一般來講，為了防止在原版的圖案面(形成有圖案的面)上附著異物，在原版上設有被稱為蒙版(Pellicle)的保護構件。在蒙版中例如有由合成樹脂構成的膜狀製品。蒙版經由蒙版支撐框從原版的圖案面偏移了規定距離地被支撐。由此，由於異物附著在從原版的圖案面偏移了規定距離的蒙版膜上，所以，在曝光時在基板上無法結成焦點，只不過是作為光斑顯現。這樣，透過在原版設置蒙版，能夠降低曝光時的異物影響。 另外，在曝光裝置中，為了應對半導體元件的微細化來實現高解析度，正在發展曝光波長的短波長化。當前，對於曝光波長，KrF準分子雷射的248nm、屬於真空紫外區的ArF準分子雷射的193nm是主流，在將ArF準分子雷射那樣的短波長(高能)用作光源的曝光裝置中，原版的模糊成為問題。具體來講，首先，因存在於原版的表面或環境氣體中的氧與鹼基的反應或者有機雜質的光化學反應，會在原版上形成出構成模糊起因的物質。並且，透過水分的存在和紫外線的照射(曝光的能量)使得模糊起因凝聚，成長為構成缺陷原因的尺寸的模糊。 針對原版的模糊，從原版的保管環境以及搬運環境將作為模糊原因物質的揮發性雜質(主要是SO x、NH 3、有機物)或作為模糊生成物質的水分除去(低濕度化)成為了總體上抑制原版模糊的有效對策。作為這樣對策的一例，在日本特開平11-249286號專利公報、日本專利第4585514號專利公報中提出了以下技術：在原版的周圍環境中供給清潔乾燥空氣(CDA)等氣體來進行氣體清洗，即由清洗氣體置換原版的周圍環境。 另外，原版的模糊也因存在於蒙版膜內部的水分而形成。但是，即便蒙版膜內部暴露於低濕度環境，在蒙版膜內部被置換成低濕度之前需要耗費時間。因此，對原版的保管庫等保管環境進行氣體清洗的方式對蒙版膜內部的低濕度化是有效的，對抑制原版的模糊是有效的。 In the manufacturing process (lithography process) of a semiconductor element or a liquid crystal display element, a pattern of a master plate (mask or reticle) is applied to a substrate (crystal plate) on which a resist material is arranged. An exposure device that transfers (forms) a pattern on a substrate by projecting it with a circle). In the exposure apparatus, when the pattern of the original plate is projected onto the substrate, that is, when the substrate is exposed, if foreign matter or the like exists on the original plate, the foreign matter is transferred to the substrate together with the pattern and becomes a defect (defect). s reason. Therefore, in general, in order to prevent foreign matter from adhering to the pattern surface (surface on which the pattern is formed) of the original plate, a protective member called a mask (Pellicle) is provided on the original plate. Among the masks, there are, for example, film-like products made of synthetic resin. The mask is supported by being shifted by a predetermined distance from the pattern surface of the original plate via the mask support frame. As a result, since foreign matter adheres to the mask film displaced by a predetermined distance from the pattern surface of the original plate, it does not focus on the substrate during exposure, but only appears as a flare. In this way, by setting a mask on the original plate, the influence of foreign matter during exposure can be reduced. In addition, in exposure apparatuses, in order to achieve high resolution in response to miniaturization of semiconductor elements, shortening of exposure wavelengths is being developed. Currently, 248 nm of KrF excimer lasers and 193 nm of ArF excimer lasers belonging to the vacuum ultraviolet region are the main exposure wavelengths. In exposure apparatuses that use short wavelengths (high energy) such as ArF excimer lasers as light sources , the blur of the original becomes a problem. Specifically, firstly, due to the reaction of oxygen and bases existing on the surface of the original plate or in the ambient gas, or the photochemical reaction of organic impurities, substances that constitute the cause of blurring are formed on the original plate. In addition, due to the presence of moisture and the irradiation of ultraviolet rays (energy of exposure), the causes of blurring are aggregated, and the blurring of a size that constitutes a cause of defects grows. For the blurring of the original, it is generally necessary to remove volatile impurities (mainly SO x , NH 3 , and organic substances) that are blur-causing substances or moisture as blur-generating substances (lower humidity) from the storage environment and transportation environment of the original. Effective countermeasures to suppress original blur. As an example of such a countermeasure, the following technology is proposed in Japanese Patent Laid-Open No. 11-249286 and Japanese Patent No. 4585514: the gas cleaning is performed by supplying a gas such as clean dry air (CDA) in the surrounding environment of the original plate, That is, the surrounding environment of the original plate is replaced by the cleaning gas. In addition, the blur of the original plate is also caused by the moisture existing inside the mask film. However, even if the inside of the mask film is exposed to a low humidity environment, it takes time until the inside of the mask film is replaced with low humidity. Therefore, the method of gas cleaning the storage environment such as the original plate is effective in reducing the humidity inside the mask film, and is effective in suppressing the blurring of the original plate.

[發明欲解決之課題] 然而，在現有技術中，存在著為了使原版的保管環境等周圍環境低濕度化而需要大量(大流量)的清洗氣體這樣的課題。 本發明提供有利於將原版的收納空間低濕度化的收納裝置。 [解決課題之手段] 為了達成前述目的，作為本發明的一個方面的收納裝置，該收納裝置，係收納原版，前述原版包含形成有圖案的圖案面，具有：第1供給部，其係吹出並供給氣體而形成第1氣流以及第2氣流中的至少其中一方的氣流，前述第1氣流係沿著與前述原版的前述圖案面為相反側的第1面，前述第2氣流係沿著與保護構件的前述圖案面那側為相反側的第2面，前述保護構件被設置成離開前述圖案面而保護前述圖案面；第2供給部，其係吹出並供給氣體而形成第3氣流，前述第3氣流係與由前述第1供給部形成的前述至少一方的氣流干涉；以及構件，其係包含與從前述第2供給部吹出的氣體的吹出方向交叉並用於接受由前述第2供給部形成的前述第3氣流的接受面；其中，前述第1供給部係以用於搬運前述原版的搬運口為基準而配置在收納前述原版的收納空間的進深側；前述第2供給部係以前述搬運口為基準而配置在前述收納空間的近前側。 本發明的另外目的或者其他方面將透過以下參閱附圖來說明的實施方式而明瞭。 [發明效果] 根據本發明，例如可提供有利於將原版的收納空間低濕度化的收納裝置。 [The problem to be solved by the invention] However, in the prior art, there is a problem that a large amount (large flow rate) of cleaning gas is required in order to lower the humidity of the surrounding environment such as the storage environment of the original plate. The present invention provides a storage device which is advantageous in reducing the humidity of the storage space of the original plate. [Means of Solving Problems] In order to achieve the above object, as an aspect of the present invention, a storage device is a storage device that stores an original plate, the original plate includes a pattern surface on which a pattern is formed, and has a first supply portion that blows and supplies gas to form a first At least one of the airflow and the second airflow, the first airflow is along the first surface opposite to the pattern surface of the original plate, and the second airflow is along the pattern surface of the protective member. The second surface on the opposite side, the protective member is provided to be separated from the pattern surface to protect the pattern surface; the second supply part blows and supplies gas to form a third air flow, and the third air flow is connected with the above-mentioned The at least one air flow formed by the first supply part interferes; and a member that intersects the blowing direction of the gas blown from the second supply part and receives the third air flow formed by the second supply part. wherein, the first supply part is arranged on the back side of the storage space for accommodating the original plate with reference to the conveyance port for conveying the original plate; and the second supply part is arranged on the basis of the conveyance port The front side of the storage space. Additional objects or other aspects of the present invention will be apparent from the embodiments described below with reference to the accompanying drawings. [Inventive effect] According to the present invention, for example, it is possible to provide a storage device which is advantageous in reducing the humidity of the storage space of the original plate.

以下，參閱附圖詳細說明實施方式。另外，以下的實施方式並不限定有關申請專利範圍的發明。在實施方式中記載有多個特徵，但這些特徵並非全部都是發明的必要技術特徵，另外多個特徵也可以任意組合。進而，在附圖中，對相同或相似的構成標註相同的參考編號，省略重複說明。 首先，在說明本實施方式之前，對有關收納(保管)原版的收納裝置(保管庫)的現有技術進行說明。 圖11是表示專利文獻1所揭示的收納裝置1000的構成的概略圖。收納裝置1000從一個方向對收納包含形成有圖案的圖案面的原版91的收納空間(原版91的周圍環境)進行氣體清洗。具體來講，供給部94經由噴嘴使氣體95(低濕度氣體)流往原版91的與圖案面相反側的背面92的周圍或保護原版91的圖案面的保護構件(蒙版)的保護面93的周圍，從而進行收納空間的氣體清洗。這樣，若從一個方向對原版91的收納空間進行氣體清洗，則如圖11所示那樣，相對於原版91在下游側產生渦流96，將原版91的周圍的高濕度環境氣體捲入，故而存在無法使收納空間低濕度化這樣的課題。 圖12是表示專利文獻2所揭示的收納裝置2000的構成的概略圖。收納裝置2000對收納包含形成有圖案的圖案面的原版101的收納空間110進行氣體清洗。具體來講，在收納裝置2000中，使氣體104(低濕度氣體)從原版101的收納空間110的開口側朝內側流動，該氣體104在對收納空間110(的內側)進行清洗(purge)之後流向開口側。此時，氣體104在原版101的與圖案面相反側的背面102的周圍、保護原版101的圖案面的保護構件(蒙版)的保護面103的周圍流動。另外，在圖12中，表示出從原版101的收納空間110的內側流向開口側的氣體104的流動。另外，在收納裝置2000，在原版101的收納空間110的開口側(相對於原版101的下游側)的上方，設有經由噴嘴朝下方吹出氣體106(低濕度氣體)而形成氣簾的供給部105。進而，在收納裝置2000，設有將設於規定原版101的收納空間110的腔體108的開口關閉而將收納空間110形成為密閉空間的開閉機構109。 在這樣的收納裝置2000中，在由開閉機構109將收納空間110形成為密閉空間而不進行氣體清洗的場合，相對於原版101在下游側產生渦流107，捲入原版101的周圍的高濕度環境氣體，故而無法使收納空間110低濕度化。為了使原版101的收納空間110低濕度化，必須縮窄產生渦流107的區域來降低周圍的高濕度環境氣體的捲入。因而，考慮利用供給部105來形成將流向原版101的背面102的周圍、保護構件的保護面103的周圍的氣體104的流動遮斷那樣的氣簾。但是，存在為了形成這樣的氣簾而需要大量(大流量)的氣體106這樣的課題。 以下，在各實施方式中，對有利於將原版的收納空間低濕度化的收納裝置進行說明。 ＜第1實施方式＞ 圖1是表示本發明的第1實施方式中的收納裝置1A的構成的概略圖。收納裝置1A在由收納腔體(未圖示)規定的收納空間AS中收納(保管)包含形成有圖案的圖案面14的原版11。 原版11例如經由設於收納腔體的保持槽或保持構件而被保持在收納空間AS中。在原版11上，為了防止異物附著於原版11的圖案面14，設有被稱為蒙版的保護構件12。保護構件12經由支撐框12a從原版11的圖案面14離開(偏置)規定距離地被支撐。 在收納裝置1A中，為了從一個方向對收納原版11的收納空間AS(原版11的周圍環境)進行氣體清洗，設有第1供給部13(噴嘴)。第1供給部13向原版11的與圖案面14相反側的背面15(第1面)的周圍、保護構件12的與圖案面14側相反側的保護面16(第2面)的周圍供給氣體，以該氣體置換收納空間AS。具體來講，第1供給部13具有形成沿著原版11的背面15的(即在背面15的周圍流動的)第1氣流17以及沿著保護構件12的保護面16的(即在保護面16的周圍流動的)第2氣流18中的至少一方氣流的功能。在本實施方式中，第1供給部13以形成第1氣流17以及第2氣流18雙方氣流的方式相對於收納空間AS吹出並供給氣體。這樣，第1供給部13形成從收納空間AS的進深側流向收納空間AS的近前側的一個方向的氣流(第1氣流17以及第2氣流18)。另外，第1供給部13既可以由1個噴嘴形成第1氣流17和第2氣流18，也可以由分體的噴嘴(2個噴嘴)分別形成第1氣流17以及第2氣流18。透過由分體的噴嘴分別形成第1氣流17以及第2氣流18，能單獨地控制(設定)第1氣流17的流量和第2氣流18的流量。 另外，在收納裝置1A中，在設於收納腔體的開口側，具體是在用於在收納裝置1A與外部之間搬運原版11的搬運口CP那側的上方，設有第2供給部21。第2供給部21形成用於將搬運口CP與外部遮斷的氣簾。具體來講，第2供給部21以形成與由第1供給部13形成的第1氣流17以及第2氣流18中的至少一方氣流干涉的第3氣流19的方式吹出並供給氣體。在本實施方式中，第2供給部21以形成與由第1供給部13形成的第1氣流17以及第2氣流18雙方氣流碰撞的(交叉的)第3氣流19的方式朝下方吹出並供給氣體。 如圖1所示那樣，在收納裝置1A中，第1供給部13以搬運口CP為基準配置在收納空間AS的進深側，第2供給部21以搬運口CP為基準配置在收納空間AS的近前側。另外，若以收納於收納空間AS的原版11為基準，則第1供給部13配置在原版11的一方側(-Y方向)，第2供給部13配置在原版11的另一方側(+Y方向)。透過這樣的配置，在收納裝置1A中，能從一個方向對收納空間AS進行氣體清洗。 作為從第1供給部13以及第2供給部21供給的氣體(清洗氣體)，例如可列舉清潔乾燥空氣(CDA)。CDA與通常的空氣相比，其包含作為原版11的模糊生成物質的水分(水蒸氣)的比例極低，在本實施方式中是其濕度為1%以下的氣體。另外，從第1供給部13以及第2供給部21供給的氣體，也可以是包含水分的比例小的非活性氣體，例如氮氣(N 2)。透過以濕度為1%以下的CDA對收納空間AS進行清洗，能將原版11的周圍環境的濕度形成為例如1.5%以下的低濕度，能抑制原版11的模糊的產生。 另外，若能將原版11的周圍環境的濕度設為目標濕度以下，則從第1供給部13供給的氣體與從第2供給部21供給的氣體也可以不同。換言之，形成第3氣流19的氣體也可以是形成第1氣流17以及第2氣流18的氣體以外的氣體。但是，從裝置構成的複雜化觀點出發，優選的是，從第1供給部13供給的氣體和從第2供給部21供給的氣體是相同氣體。 進而，在收納裝置1A中，與第2供給部21相向地設有壁構件20。壁構件20是包含與從第2供給部21吹出的氣體的吹出方向BD交叉並用於接受由第2供給部21形成的第3氣流19的接受面20a的構件。具體來講，以接受面20a相對於保護構件12的保護面16在Y方向(沿著保護面16的方向)自保護面16起朝外側為0mm以上且300mm以下的範圍內延伸的方式構成壁構件20。壁構件20既可以作為規定收納空間AS的收納腔體的一部分構成，也可以與收納腔體分體地構成。 在收納裝置1A中，也如上述那樣，因第1氣流17以及第2氣流18，相對於原版11在下游側產生渦流22。但是，在本實施方式中，透過以由第2供給部21形成的第3氣流19和壁構件20夾入第1氣流17以及第2氣流18，能縮窄產生渦流22的區域(產生區域)。因此，能減少原版11的周圍的高濕度環境氣體的捲入，使收納空間AS低濕度化。另外，從縮窄渦流22的產生區域的觀點出發，優選的是，第2供給部21與壁構件20之間的Z方向(與原版11的圖案面14正交的方向)的距離短。具體來講，壁構件20可以配置成在Z方向使接受面20a與第2供給部21的氣體的吹出口之間的距離為10mm以上且500mm以下。 在此，參閱圖2，對第1氣流17的流量Q1、第2氣流18的流量Q2和第3氣流19的流量Q3的關係進行說明。在圖2中，示出了第3氣流19的流量Q3為第1氣流17的流量Q1與第2氣流18的流量Q2之和(第1氣流17和第2氣流18的總流量)以上的場合、即Q3≥Q1+Q2的場合的原版11的周邊處的氣體的流動。在該場合，如圖2所示那樣，透過第3氣流19碰撞壁構件20的接受面20a，產生其一部分朝原版11那側流動的(逆流的)氣流19a。由此，由於原版11的周圍的高濕度環境氣體被捲入，生成高濕度的氣體流向原版11那側的氣流81，所以，對原版11的周圍環境即收納空間AS的低濕度化不利。因此，優選的是，第3氣流19的流量Q3小於第1氣流17的流量Q1與第2氣流18的流量Q2之和(第1氣流17和第2氣流18的總流量)，即Q3＜Q1+Q2。 另外，收納裝置1A也能如圖3所示那樣構成為透過設置多層收納空間AS即層疊多層原版11的收納架來收納多個原版11。另外，在圖3中，層疊2層收納架，但並不限定收納架的層數，也可以層疊3層以上的收納架。圖3是示出能收納多個原版11的收納裝置1A的構成的圖。在該場合，相對於多個收納空間AS(多個原版11)分別設置第2供給部21以及壁構件20。此時，也可以如圖3所示的收納裝置1A那樣，在設於上層的收納空間AS的壁構件20，設置用於在下層的收納空間AS形成第3氣流19的第2供給部21。另一方面，第1供給部13無需針對多個收納空間AS分別設置，也可以如圖3所示那樣，由1個第1供給部13形成多個收納空間AS各自中的第1氣流17以及第2氣流18。在該場合，相比針對多個收納空間AS分別設置第1供給部13的場合，在裝置構成方面是有利的。 另外，在圖1中，壁構件20僅存在於與第2供給部21相向的部分。但是，壁構件20也可以如圖4所示那樣相比原版11的背面15或保護構件12的保護面16朝第1供給部13那側延伸。在該場合，由第2供給部21形成的第2氣流18透過壁構件20進行整流。同樣，從第1氣流17的整流這樣的觀點出發，也可以如圖4所示那樣使第2供給部21相比原版11的背面15或保護構件12的保護面16朝第1供給部13那側延伸。 圖5是圖1所示的收納裝置1A的XY平面圖。優選的是，第1氣流17如圖5所示那樣在X方向在比原版11的背面15寬的範圍流動。同樣，優選的是，第2氣流18在X方向在比保護構件12的保護面16寬的範圍流動。因此，第1供給部13可以按照在X方向在比原版11的背面15或保護構件12的保護面16寬的範圍形成第1氣流17以及第2氣流18的方式吹出並供給氣體。另外，優選的是，第3氣流19在X方向在比第1氣流17以及第2氣流18寬的範圍流動。因此，第2供給部21可以按照在X方向以在比第1氣流17以及第2氣流18寬的範圍形成第3氣流19的方式吹出並供給氣體。 優選的是，第2供給部21(的氣體的吹出口)在Y方向配置在原版11的附近。其原因在於，若將第2供給部21配置在遠離原版11的位置，則第3氣流19與第1氣流17以及第2氣流18干涉的(交叉的)位置且遠離原版11，渦流22的產生區域在+Y方向擴大，收納空間AS的低濕度化會需要時間。 另外，如上述那樣，第3氣流19只要與壁構件20協同地相對於原版11在下游側夾入第1氣流17以及第2氣流18即可。因此，如圖6所示那樣，無需使第2供給部21與壁構件20在Z方向相向，只要以從第2供給部21吹出的氣體的吹出方向BD與接受面20a交叉的方式配置第2供給部21和壁構件20即可。即便第2供給部21和壁構件20在Y方向錯開，只要從第2供給部21吹出的氣體的吹出方向BD與壁構件20的接受面20a交叉即可。 ＜第2實施方式＞ 參閱圖7A以及圖7B對本發明的第2實施方式中的收納裝置1B進行說明。圖7A是表示本發明的第2實施方式中的收納裝置1B的構成的概略圖，圖7B是圖7A所示的收納裝置1B的XY平面圖。收納裝置1B在由收納腔體(未圖示)規定的收納空間AS中收納(保管)包含形成有圖案的圖案面14的原版11。收納裝置1B具有與收納裝置1A同樣的構成，但與收納裝置1A比較，壁構件20的構成不同。 在本實施方式中，壁構件20在接受面20a中包含朝第2供給部21那側突出的凸部41。凸部41與第2供給部21相向並以與從第2供給部21吹出的氣體的吹出方向BD交叉的方式設置。透過在壁構件20的接受面20a設置凸部41，能縮小第2供給部21與壁構件20之間的Z方向的距離。另外，凸部41的第2供給部21那側的面可以形成為第2供給部21那側的面在Z方向位於比保護構件12的保護面16高的位置(+Z方向)。 如第1實施方式所說明的那樣，能利用由第2供給部21形成的第3氣流19和壁構件20縮窄渦流42的產生區域，但是，像本實施方式那樣能透過設置凸部41來進一步縮窄渦流42的產生區域。因此，能減少原版11的周圍的高濕度環境氣體的捲入，使收納空間AS低濕度化。這樣，凸部41對原版11的周圍環境的低濕度化是有效的。 另外，在本實施方式中，如圖7B所示那樣，相對於原版11在X方向設有側壁43。參閱圖7B，由第1供給部13形成的第1氣流17一般在X方向擴散。但是，在本實施方式中，由於設有側壁43，所以能抑制第1氣流17朝X方向的擴散。因此，在本實施方式中，能使第1氣流17在X方向在比原版11的背面15窄的範圍流動。同樣，能使第2氣流18在X方向在比保護構件12的保護面16窄的範圍流動。另一方面，優選的是，第3氣流19在X方向在比第1氣流17以及第2氣流18寬的範圍流動。 ＜第3實施方式＞ 參閱圖8對本發明的第3實施方式中的收納裝置1C進行說明。圖8是表示本發明的第3實施方式中的收納裝置1C的構成的概略圖。收納裝置1C在由收納腔體(未圖示)規定的收納空間AS中收納(保管)包含形成有圖案的圖案面14的原版11。收納裝置1C具有與收納裝置1A同樣的構成，但與收納裝置1A比較，還具有第3供給部51。另外，在本實施方式中，第1供給部13以僅形成第1氣流17的方式吹出並供給氣體。 第3供給部51與保護構件12的保護面16相向地設置，朝保護面16吹出並供給氣體。由此，如圖8所示那樣，在原版11的收納空間AS中形成氣流52。 從第3供給部51供給的氣體(清洗氣體)相比通常的空氣，其包含作為原版11的模糊生成物質的水分(水蒸氣)的比例極低，在本實施方式中是其濕度為1%以下的氣體。另外，從第3供給部51供給的氣體既可以與從第1供給部13供給的氣體或從第2供給部21供給的氣體不同，也可以相同。 如第1實施方式所說明的那樣，能利用由第2供給部21形成的第3氣流19和壁構件20縮窄渦流53的產生區域，但是，像本實施方式那樣透過形成氣流52而能進一步縮窄渦流53的產生區域。因此，能減少原版11的周圍的高濕度環境氣體的捲入，使收納空間AS低濕度化。這樣，相對於保護構件12的保護面16從第3供給部51吹出氣體而形成氣流52的方式對原版11的周圍環境的低濕度化是有效的。 另外，在本實施方式中，將第3供給部51設於壁構件20，但不限定於此。例如，第3供給部51只要構成為能朝保護構件12的保護面16的整個區域吹出氣體即可，也可以與壁構件20分體地設置第3供給部51。另外，第3供給部51的氣體的吹出口的形狀可選擇狹縫形狀或圓形形狀等任意形狀。 ＜第4實施方式＞ 參閱圖9對本發明的第4實施方式中的收納裝置1D進行說明。圖9是表示本發明的第4實施方式中的收納裝置1D的構成的概略圖。收納裝置1D在由收納腔體(未圖示)規定的收納空間AS中收納(保管)包含形成有圖案的圖案面14的原版11。收納裝置1D具有與收納裝置1A同樣的構成，但與收納裝置1A比較，還具有第4供給部61。 第4供給部61與第2供給部21相向地設於壁構件20。第4供給部61以形成第4氣流62的方式吹出並供給氣體，該第4氣流62與由第1供給部13形成的第1氣流17、第2氣流18干涉且與由第2供給部21形成的第3氣流19相向。另外，優選的是，第4氣流62在X方向在與第3氣流19同等程度的範圍內流動。 從第4供給部61供給的氣體(清洗氣體)相比通常的空氣，其包含作為原版11的模糊生成物質的水分(水蒸氣)的比例極低，在本實施方式中是其濕度為1%以下的氣體。另外，從第4供給部61供給的氣體既可以與從第1供給部13供給的氣體或從第2供給部21供給的氣體不同，也可以相同。 在本實施方式中，由於第4氣流62以與第1氣流17以及第2氣流18干涉(碰撞)的方式形成，所以能獲得與第3實施方式同樣的效果。具體來講，能利用由第2供給部21形成的第3氣流19和壁構件20縮窄渦流63的產生區域，但是，像本實施方式那樣透過形成第4氣流62而能進一步縮窄渦流63的產生區域。因此，能減少原版11的周圍的高濕度環境氣體的捲入，使收納空間AS低濕度化。這樣，形成從第4供給部61吹出氣體而與第3氣流19相向的第4氣流62的方式對原版11的周圍環境的低濕度化是有效的。 在此，對第1氣流17的流量Q1、第2氣流18的流量Q2、第3氣流19的流量Q3和第4氣流62的流量Q4的關係進行說明。例如考慮第3氣流19的流量Q3與第4氣流62的流量Q4之和(總流量)為第1氣流17的流量Q1與第2氣流18的流量Q2之和(總流量)以上的場合、即Q3+Q4≥Q1+Q2的場合。在該場合，透過第3氣流19與第4氣流62碰撞，產生其一部分流往原版11那側的(逆流的)氣流。由此，原版11的周圍的高濕度環境氣體被捲入，生成高濕度的氣體流往原版11那側的氣流，故而對作為原版11的周圍環境的收納空間AS的低濕度化不利。因此，優選的是，第3氣流19的流量Q3與第4氣流62的流量Q4之和小於第1氣流17的流量Q1與第2氣流18的流量Q2之和，即Q3+Q4＜Q1+Q2。 這樣，根據第1實施方式、第2實施方式、第3實施方式以及第4實施方式，無需大量(大流量)的氣體(清洗氣體)，能提供有利於使作為原版11的周圍環境的收納空間AS低濕度化的收納裝置。另外，能適當組合第1實施方式、第2實施方式、第3實施方式和第4實施方式。 以下，參閱圖10，對作為收納原版的收納部應用收納裝置1A的曝光裝置進行說明。另外，在此，將收納裝置1A應用於曝光裝置，但也可以將收納裝置1B、1C或者1D應用於曝光裝置。圖10是表示作為本發明的一個方面的曝光裝置505的構成的概略圖。 曝光裝置505是在作為半導體元件或液晶顯示元件等器件的製造工序的光刻工序中被採用而在基板上形成圖案的光刻裝置。曝光裝置505經由原版對基板進行曝光，將原版的圖案轉印到基板上。曝光裝置505可以採用步進掃描方式、分佈重複方式、其他曝光方式。 如圖10所示那樣，曝光裝置505具有：照明光學系統501、保持並移動原版的原版載臺502(原版保持部)、投影光學系統503、保持並移動基板的基板載臺504、以及收納裝置1A。 照明光學系統501利用來自光源的光對原版載臺502所保持的原版11進行照明。照明光學系統501包含透鏡、反射鏡、光學積分器、光圈等。另外，對於光源例如能使用波長約為193nm的ArF準分子雷射、波長約為248nm的KrF準分子雷射、波長約為157nm的F 2雷射、YAG雷射等雷射。光源所使用的雷射的個數並沒有限定。在光源使用雷射的場合，照明光學系統501可以包含將鐳射(平行光)整形為所期望的形狀的整形光學系統或使相干的鐳射不相干化的不相干化光學系統。另外，光源並不限定於雷射，也可以使用1個或者多個水銀燈或氙氣燈等燈。 投影光學系統503將原版11的圖案投影到基板載臺504所保持的基板上。投影光學系統503能使用僅由多個透鏡元件構成的光學系統、包含多個透鏡元件及至少1個凹面反射鏡的光學系統(反射折射光學系統)。另外，投影光學系統503能使用包含多個透鏡元件和1個衍射成像元件等衍射光學元件的光學系統或全反射鏡型的光學系統等。 收納裝置1A對從曝光裝置505的外部被搬入曝光裝置505並向原版載臺502被搬運的原版11進行收納(保管)。收納裝置1A如上述那樣無需大量(大流量)的氣體(清洗氣體)，能使作為原版11的周圍環境的收納空間AS低濕度化。因此，從收納裝置1A向原版載臺502被搬運並被原版載臺502保持的原版11在曝光時可抑制模糊的產生。由此，曝光裝置505在半導體元件或液晶顯示元件等器件的製造工序的光刻工序中相比以往能以低成本製造出高品位的器件。 本發明的實施方式中的物品製造方法例如適於製造器件(半導體元件、磁性記憶媒體、液晶顯示元件等)等物品。該製造方法包含：使用曝光裝置505對塗敷了感光劑的基板進行曝光(在基板上形成圖案)的工序、以及對經過曝光的基板進行顯影(處理基板)的工序。另外，該製造方法能包含其他周知的工序(氧化、成膜、蒸鍍、摻雜、平坦化、蝕刻、抗蝕劑剝離、切割、黏合、封裝等)。本實施方式的物品製造方法相比以往的方法在物品的性能、品質、生產效率以及生產成本中的至少一個方面是有利的。另外，上述的物品製造方法也可以使用壓印裝置或描畫裝置等光刻裝置來進行。 本發明並不限於上述實施方式，在不脫離發明之精神及範圍下，是可以做各種的改變及變化。因此，為了公開發明的範圍而附上請求項。 Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. In addition, the following embodiment does not limit the invention concerning the claimable scope. Although a plurality of features are described in the embodiments, not all of these features are essential technical features of the invention, and a plurality of features may be combined arbitrarily. Furthermore, in the drawings, the same or similar components are denoted by the same reference numerals, and overlapping descriptions are omitted. First, prior to the description of the present embodiment, the related art of a storage device (storage) for storing (storing) an original plate will be described. FIG. 11 is a schematic diagram showing the configuration of a storage device 1000 disclosed in Patent Document 1. As shown in FIG. The storage device 1000 cleans the storage space (the surrounding environment of the original plate 91 ) in which the original plate 91 including the pattern surface on which the pattern is formed is stored (the surrounding environment of the original plate 91 ) from one direction. Specifically, the supply unit 94 flows the gas 95 (low-humidity gas) to the periphery of the back surface 92 of the original plate 91 opposite to the pattern surface or the protective surface 93 of the protective member (mask) that protects the pattern surface of the original plate 91 through a nozzle. around, so as to carry out the gas cleaning of the storage space. In this way, when the storage space of the original plate 91 is gas purged from one direction, as shown in FIG. 11 , the vortex 96 is generated on the downstream side with respect to the original plate 91 and the high-humidity ambient gas around the original plate 91 is drawn in, so there is There is a problem that the storage space cannot be reduced in humidity. FIG. 12 is a schematic diagram showing the configuration of a storage device 2000 disclosed in Patent Document 2. As shown in FIG. The storage device 2000 performs gas cleaning on the storage space 110 in which the original plate 101 including the patterned surface on which the pattern is stored is stored. Specifically, in the storage device 2000 , the gas 104 (low humidity gas) is made to flow inward from the opening side of the storage space 110 of the original plate 101 , and the gas 104 after cleaning (purge) the storage space 110 (inside) is made to flow. flow to the open side. At this time, the gas 104 flows around the back surface 102 of the original plate 101 opposite to the pattern surface and around the protective surface 103 of the protective member (mask) that protects the pattern surface of the original plate 101 . In addition, in FIG. 12, the flow of the gas 104 which flows from the inside of the storage space 110 of the original plate 101 to the opening side is shown. In addition, the storage device 2000 is provided with a supply unit 105 that blows a gas 106 (low humidity gas) downward through a nozzle to form an air curtain above the opening side (the downstream side with respect to the original plate 101 ) of the storage space 110 of the original plate 101 . Furthermore, the storage apparatus 2000 is provided with the opening and closing mechanism 109 which closes the opening of the cavity 108 provided in the storage space 110 which defines the original plate 101, and forms the storage space 110 as a closed space. In such a storage device 2000 , when the storage space 110 is formed as a closed space by the opening and closing mechanism 109 and the gas cleaning is not performed, the eddy current 107 is generated on the downstream side of the original plate 101 and is drawn into the high-humidity environment around the original plate 101 . Therefore, the humidity of the storage space 110 cannot be lowered. In order to reduce the humidity of the storage space 110 of the original plate 101, it is necessary to narrow the region where the eddy current 107 is generated to reduce the entrainment of the surrounding high-humidity ambient gas. Therefore, it is conceivable to use the supply unit 105 to form a gas curtain that blocks the flow of the gas 104 flowing around the back surface 102 of the original plate 101 and around the protective surface 103 of the protective member. However, there is a problem that a large amount (large flow rate) of the gas 106 is required in order to form such a gas curtain. Hereinafter, in each embodiment, a storage device which is advantageous in reducing the humidity of the storage space of the original plate will be described. <1st Embodiment> FIG. 1 : is a schematic diagram which shows the structure of 1 A of storage apparatuses in 1st Embodiment of this invention. The storage apparatus 1A accommodates (stores) the original plate 11 including the pattern surface 14 on which the pattern is formed in the storage space AS defined by the storage cavity (not shown). The original plate 11 is held in the storage space AS via, for example, a holding groove or a holding member provided in the storage cavity. The original plate 11 is provided with a protective member 12 called a mask in order to prevent foreign matter from adhering to the pattern surface 14 of the original plate 11 . The protective member 12 is supported by a predetermined distance away (offset) from the pattern surface 14 of the original plate 11 via the support frame 12a. In the storage device 1A, a first supply unit 13 (nozzle) is provided in order to purge the storage space AS (the surrounding environment of the original plate 11 ) in which the original plate 11 is stored with gas from one direction. The first supply unit 13 supplies gas to the periphery of the back surface 15 (first surface) of the original plate 11 on the opposite side from the pattern surface 14 and the surrounding of the protective surface 16 (second surface) of the protective member 12 on the opposite side from the pattern surface 14 side , the storage space AS is replaced with this gas. Specifically, the first supply unit 13 has a first airflow 17 along the back surface 15 of the original plate 11 (that is, flowing around the back surface 15 ) and a first airflow 17 along the protective surface 16 of the protective member 12 (that is, on the protective surface 16 ). function of at least one of the second airflows 18 flowing around it. In the present embodiment, the first supply unit 13 blows and supplies gas to the storage space AS so as to form both the first airflow 17 and the second airflow 18 . Thus, the 1st supply part 13 forms the airflow (1st airflow 17 and the 2nd airflow 18) which flows in one direction from the back side of the storage space AS to the front side of the storage space AS. The first supply unit 13 may form the first airflow 17 and the second airflow 18 by one nozzle, or may form the first airflow 17 and the second airflow 18 by separate nozzles (two nozzles). By forming the first airflow 17 and the second airflow 18 by separate nozzles, the flow rate of the first airflow 17 and the flow rate of the second airflow 18 can be individually controlled (set). In addition, in the storage device 1A, the second supply portion 21 is provided on the side of the opening provided in the storage chamber, specifically, above the side of the conveyance port CP for conveying the original plate 11 between the storage device 1A and the outside. . The 2nd supply part 21 forms the air curtain for blocking the conveyance port CP from the outside. Specifically, the second supply unit 21 blows out and supplies gas so as to form a third airflow 19 that interferes with at least one of the first airflow 17 and the second airflow 18 formed by the first supply unit 13 . In the present embodiment, the second supply unit 21 blows downward and supplies the third airflow 19 that collides with both the first airflow 17 and the second airflow 18 formed by the first supply unit 13 (crossed). gas. As shown in FIG. 1 , in the storage device 1A, the first supply part 13 is arranged on the back side of the storage space AS with the conveyance port CP as the reference, and the second supply part 21 is arranged on the back of the storage space AS with the conveyance port CP as the reference near front. In addition, on the basis of the original plate 11 stored in the storage space AS, the first supply part 13 is arranged on one side (-Y direction) of the original plate 11, and the second supply part 13 is arranged on the other side (+Y direction) of the original plate 11 direction). With such an arrangement, in the storage device 1A, the storage space AS can be purged with gas from one direction. As gas (purging gas) supplied from the 1st supply part 13 and the 2nd supply part 21, clean dry air (CDA) is mentioned, for example. Compared with ordinary air, CDA contains a very low ratio of moisture (water vapor), which is a blurring-generating substance of the original plate 11, and is a gas whose humidity is 1% or less in the present embodiment. In addition, the gas supplied from the 1st supply part 13 and the 2nd supply part 21 may be an inert gas such as nitrogen gas (N 2 ), which contains a small proportion of moisture. By cleaning the storage space AS with CDA with a humidity of 1% or less, the humidity of the surrounding environment of the original plate 11 can be reduced to a low humidity of, for example, 1.5% or less, and the occurrence of blurring of the original plate 11 can be suppressed. In addition, the gas supplied from the first supply unit 13 and the gas supplied from the second supply unit 21 may be different if the humidity of the surrounding environment of the original plate 11 can be set to be equal to or lower than the target humidity. In other words, the gas forming the third gas flow 19 may be a gas other than the gas forming the first gas flow 17 and the second gas flow 18 . However, it is preferable that the gas supplied from the 1st supply part 13 and the gas supplied from the 2nd supply part 21 are the same gas from a viewpoint of complicating an apparatus structure. Furthermore, in 1A of storage apparatuses, the wall member 20 is provided so that the 2nd supply part 21 may be opposed. The wall member 20 is a member including a receiving surface 20 a for receiving the third airflow 19 formed by the second supply portion 21 and intersecting the blowing direction BD of the gas blown from the second supply portion 21 . Specifically, the wall is configured such that the receiving surface 20 a extends in the Y direction (the direction along the protective surface 16 ) with respect to the protective surface 16 of the protective member 12 from the protective surface 16 to the outside in a range of 0 mm or more and 300 mm or less. member 20. The wall member 20 may be configured as a part of the storage cavity that defines the storage space AS, or may be configured separately from the storage cavity. Also in the storage device 1A, as described above, the vortex 22 is generated on the downstream side with respect to the original plate 11 by the first airflow 17 and the second airflow 18 . However, in the present embodiment, by sandwiching the first airflow 17 and the second airflow 18 between the third airflow 19 formed by the second supply portion 21 and the wall member 20, the region where the vortex 22 is generated (generating region) can be narrowed. . Therefore, the entrainment of the high-humidity ambient gas around the original plate 11 can be reduced, and the humidity of the storage space AS can be reduced. In addition, from the viewpoint of narrowing the generation area of the eddy current 22 , it is preferable that the distance between the second supply portion 21 and the wall member 20 in the Z direction (direction orthogonal to the pattern surface 14 of the original plate 11 ) is short. Specifically, the wall member 20 may be arranged such that the distance between the receiving surface 20a and the gas outlet of the second supply unit 21 in the Z direction is 10 mm or more and 500 mm or less. Here, referring to FIG. 2 , the relationship between the flow rate Q1 of the first airflow 17 , the flow rate Q2 of the second airflow 18 , and the flow rate Q3 of the third airflow 19 will be described. In FIG. 2 , the case where the flow rate Q3 of the third airflow 19 is equal to or greater than the sum of the flow rate Q1 of the first airflow 17 and the flow rate Q2 of the second airflow 18 (the total flow rate of the first airflow 17 and the second airflow 18 ) is shown. That is, in the case of Q3≧Q1+Q2, the flow of gas in the periphery of the original plate 11. In this case, as shown in FIG. 2 , the permeating third airflow 19 collides with the receiving surface 20a of the wall member 20, and a part of the airflow 19a (reverse flow) flows toward the original plate 11 side is generated. As a result, the high-humidity ambient gas around the original plate 11 is drawn in, and the high-humidity gas is generated to flow toward the airflow 81 on the original plate 11 side. Therefore, it is disadvantageous to reduce the humidity of the storage space AS, which is the surrounding environment of the original plate 11 . Therefore, it is preferable that the flow rate Q3 of the third airflow 19 is less than the sum of the flow rate Q1 of the first airflow 17 and the flow rate Q2 of the second airflow 18 (the total flow rate of the first airflow 17 and the second airflow 18), that is, Q3<Q1 +Q2. Moreover, as shown in FIG. 3, 1 A of storage apparatuses can also be comprised so that the some original plate 11 may be accommodated by providing the storage rack in which the multiple storage space AS, ie, laminated|stacked multiple original plates 11, is provided. In addition, in FIG. 3, although two storage racks are laminated|stacked, the number of storage racks is not limited, and three or more storage racks may be laminated|stacked. FIG. 3 is a diagram showing the configuration of a storage device 1A capable of storing a plurality of original plates 11 . In this case, the second supply portion 21 and the wall member 20 are respectively provided with respect to the plurality of storage spaces AS (the plurality of original plates 11 ). In this case, as in the storage device 1A shown in FIG. 3 , the wall member 20 provided in the upper storage space AS may be provided with a second supply portion 21 for forming the third airflow 19 in the lower storage space AS. On the other hand, the first supply part 13 does not need to be provided separately for the plurality of storage spaces AS, and as shown in FIG. 3 , the first air flow 17 and The second airflow 18 . In this case, compared with the case where the first supply parts 13 are provided for each of the plurality of storage spaces AS, it is advantageous in terms of the device configuration. In addition, in FIG. 1, the wall member 20 exists only in the part which opposes the 2nd supply part 21. However, as shown in FIG. 4 , the wall member 20 may extend toward the side of the first supply part 13 rather than the back surface 15 of the original plate 11 or the protective surface 16 of the protective member 12 . In this case, the second airflow 18 formed by the second supply portion 21 passes through the wall member 20 and is rectified. Similarly, from the viewpoint of the rectification of the first air flow 17 , as shown in FIG. 4 , the second supply portion 21 may be directed toward the first supply portion 13 rather than the back surface 15 of the original plate 11 or the protection surface 16 of the protection member 12 , as shown in FIG. 4 . side extension. FIG. 5 is an XY plan view of the storage device 1A shown in FIG. 1 . Preferably, as shown in FIG. 5 , the first airflow 17 flows in a wider range than the back surface 15 of the original plate 11 in the X direction. Likewise, it is preferable that the second airflow 18 flows in a wider range than the protective surface 16 of the protective member 12 in the X direction. Therefore, the first supply unit 13 can blow out and supply the gas so as to form the first airflow 17 and the second airflow 18 in the X direction in a range wider than the back surface 15 of the original plate 11 or the protective surface 16 of the protective member 12 . In addition, it is preferable that the third airflow 19 flows in a wider range than the first airflow 17 and the second airflow 18 in the X direction. Therefore, the second supply unit 21 can blow out and supply the gas so as to form the third airflow 19 in the X direction in a range wider than the first airflow 17 and the second airflow 18 . It is preferable that the 2nd supply part 21 (the gas blower outlet) is arrange|positioned in the vicinity of the original plate 11 in the Y direction. This is because, when the second supply unit 21 is arranged at a position away from the original plate 11 , the position where the third airflow 19 interferes with the first airflow 17 and the second airflow 18 (intersecting) is away from the original plate 11 , and a vortex 22 is generated. As the area expands in the +Y direction, it takes time to reduce the humidity of the storage space AS. In addition, as described above, the third airflow 19 only needs to sandwich the first airflow 17 and the second airflow 18 on the downstream side with respect to the original plate 11 in cooperation with the wall member 20 . Therefore, as shown in FIG. 6 , it is not necessary to make the second supply part 21 and the wall member 20 face each other in the Z direction, and it is only necessary to arrange the second supply part 21 so that the blowing direction BD of the gas blown from the second supply part 21 intersects the receiving surface 20a. The supply part 21 and the wall member 20 are sufficient. Even if the second supply portion 21 and the wall member 20 are shifted in the Y direction, the blowing direction BD of the gas blown from the second supply portion 21 may intersect the receiving surface 20 a of the wall member 20 . <Second Embodiment> The storage device 1B in the second embodiment of the present invention will be described with reference to FIGS. 7A and 7B . 7A is a schematic view showing the configuration of the storage device 1B in the second embodiment of the present invention, and FIG. 7B is an XY plan view of the storage device 1B shown in FIG. 7A . The storage device 1B accommodates (stores) the original plate 11 including the pattern surface 14 on which the pattern is formed in the storage space AS defined by the storage cavity (not shown). The storage device 1B has the same configuration as the storage device 1A, but is different from the storage device 1A in the configuration of the wall member 20 . In the present embodiment, the wall member 20 includes the convex portion 41 protruding toward the second supply portion 21 side in the receiving surface 20a. The convex portion 41 faces the second supply portion 21 and is provided so as to intersect the blowing direction BD of the gas blown from the second supply portion 21 . By providing the convex portion 41 on the receiving surface 20a of the wall member 20, the distance in the Z direction between the second supply portion 21 and the wall member 20 can be reduced. In addition, the surface on the second supply portion 21 side of the convex portion 41 may be formed such that the surface on the second supply portion 21 side is located higher in the Z direction than the protective surface 16 of the protective member 12 (+Z direction). As described in the first embodiment, the third airflow 19 formed by the second supply portion 21 and the wall member 20 can be used to narrow the generation region of the vortex 42 , but, as in the present embodiment, the protruding portion 41 can be provided. The generation area of the vortex 42 is further narrowed. Therefore, the entrainment of the high-humidity ambient gas around the original plate 11 can be reduced, and the humidity of the storage space AS can be reduced. In this way, the convex portion 41 is effective in reducing the humidity of the surrounding environment of the original plate 11 . In addition, in the present embodiment, as shown in FIG. 7B , the side wall 43 is provided in the X direction with respect to the original plate 11 . Referring to FIG. 7B , the first airflow 17 formed by the first supply portion 13 is generally diffused in the X direction. However, in the present embodiment, since the side wall 43 is provided, the diffusion of the first airflow 17 in the X direction can be suppressed. Therefore, in the present embodiment, the first airflow 17 can flow in a range narrower than the back surface 15 of the original plate 11 in the X direction. Likewise, the second airflow 18 can flow in a range narrower than the protective surface 16 of the protective member 12 in the X direction. On the other hand, it is preferable that the third airflow 19 flows in a wider range than the first airflow 17 and the second airflow 18 in the X direction. <3rd Embodiment> The storage apparatus 1C in 3rd Embodiment of this invention is demonstrated with reference to FIG. 8. FIG. FIG. 8 is a schematic diagram showing the configuration of a storage device 1C in a third embodiment of the present invention. The storage device 1C accommodates (stores) the original plate 11 including the pattern surface 14 on which the pattern is formed in the storage space AS defined by the storage cavity (not shown). The storage device 1C has the same configuration as that of the storage device 1A, but further includes a third supply unit 51 as compared with the storage device 1A. In addition, in this embodiment, the 1st supply part 13 blows out and supplies gas so that only the 1st gas flow 17 may be formed. The third supply part 51 is provided so as to face the protective surface 16 of the protective member 12 , and blows and supplies gas toward the protective surface 16 . Thereby, as shown in FIG. 8 , the airflow 52 is formed in the storage space AS of the original plate 11 . The gas (cleaning gas) supplied from the third supply unit 51 contains a very low ratio of moisture (water vapor), which is a blurring-generating substance of the original plate 11 , compared to normal air, and in this embodiment, the humidity is 1%. the following gases. In addition, the gas supplied from the 3rd supply part 51 may be different from the gas supplied from the 1st supply part 13 or the gas supplied from the 2nd supply part 21, and may be the same. As described in the first embodiment, the generation region of the vortex 53 can be narrowed by the third airflow 19 formed by the second supply part 21 and the wall member 20 , but by forming the airflow 52 as in the present embodiment, it is possible to further The generation area of the vortex 53 is narrowed. Therefore, the entrainment of the high-humidity ambient gas around the original plate 11 can be reduced, and the humidity of the storage space AS can be reduced. In this way, the method of blowing gas from the third supply part 51 to the protective surface 16 of the protective member 12 to form the airflow 52 is effective for reducing the humidity of the surrounding environment of the original plate 11 . In addition, in this embodiment, although the 3rd supply part 51 is provided in the wall member 20, it is not limited to this. For example, the third supply part 51 may be configured to blow gas to the entire area of the protection surface 16 of the protection member 12 , and the third supply part 51 may be provided separately from the wall member 20 . In addition, the shape of the gas outlet of the third supply unit 51 can be selected from any shape such as a slit shape or a circular shape. <4th Embodiment> With reference to FIG. 9, the storage apparatus 1D in 4th Embodiment of this invention is demonstrated. FIG. 9 is a schematic diagram showing the configuration of the storage device 1D in the fourth embodiment of the present invention. The storage device 1D accommodates (stores) the original plate 11 including the pattern surface 14 on which the pattern is formed in the storage space AS defined by the storage cavity (not shown). The storage device 1D has the same configuration as the storage device 1A, but further includes a fourth supply unit 61 as compared with the storage device 1A. The fourth supply portion 61 is provided on the wall member 20 so as to face the second supply portion 21 . The fourth supply part 61 blows out and supplies gas so as to form a fourth airflow 62 which interferes with the first airflow 17 and the second airflow 18 formed by the first supply part 13 and which interfere with the second supply part 21 The formed third airflow 19 faces each other. Moreover, it is preferable that the 4th airflow 62 flows in the X direction in the range equivalent to the 3rd airflow 19. The gas (cleaning gas) supplied from the fourth supply unit 61 contains a very low ratio of moisture (water vapor), which is a blurring-generating substance of the original plate 11, compared to normal air, and in this embodiment, the humidity is 1%. the following gases. In addition, the gas supplied from the 4th supply part 61 may be different from the gas supplied from the 1st supply part 13 or the gas supplied from the 2nd supply part 21, and may be the same. In the present embodiment, since the fourth airflow 62 is formed to interfere (collide with) with the first airflow 17 and the second airflow 18, the same effects as those of the third embodiment can be obtained. Specifically, the generation area of the vortex 63 can be narrowed by the third airflow 19 formed by the second supply unit 21 and the wall member 20 , but the vortex 63 can be further narrowed by forming the fourth airflow 62 as in the present embodiment. production area. Therefore, the entrainment of the high-humidity ambient gas around the original plate 11 can be reduced, and the humidity of the storage space AS can be reduced. In this way, the formation of the fourth air flow 62 , which blows the air from the fourth supply unit 61 and faces the third air flow 19 , is effective for reducing the humidity of the surrounding environment of the original plate 11 . Here, the relationship between the flow rate Q1 of the first airflow 17 , the flow rate Q2 of the second airflow 18 , the flow rate Q3 of the third airflow 19 , and the flow rate Q4 of the fourth airflow 62 will be described. For example, consider the case where the sum (total flow rate) of the flow rate Q3 of the third airflow 19 and the flow rate Q4 of the fourth airflow 62 is equal to or greater than the sum (total flow rate) of the flow rate Q1 of the first airflow 17 and the flow rate Q2 of the second airflow 18, that is, When Q3+Q4≥Q1+Q2. In this case, the permeating third airflow 19 collides with the fourth airflow 62, and a part of the airflow (reverse flow) flows toward the original plate 11 side. As a result, the high-humidity ambient gas around the original plate 11 is drawn in, and the high-humidity gas flows toward the original plate 11 to generate an airflow, which is disadvantageous for lowering the humidity of the storage space AS, which is the surrounding environment of the original plate 11 . Therefore, it is preferable that the sum of the flow rate Q3 of the third airflow 19 and the flow rate Q4 of the fourth airflow 62 is smaller than the sum of the flow rate Q1 of the first airflow 17 and the flow rate Q2 of the second airflow 18, that is, Q3+Q4<Q1+Q2 . In this way, according to the first embodiment, the second embodiment, the third embodiment, and the fourth embodiment, it is possible to provide a storage space that is beneficial to the surrounding environment of the original plate 11 without requiring a large amount (large flow rate) of gas (purging gas). AS low-humidity storage device. In addition, the first embodiment, the second embodiment, the third embodiment and the fourth embodiment can be appropriately combined. Hereinafter, with reference to FIG. 10, the exposure apparatus which applied the storage apparatus 1A as a storage part which accommodates an original plate is demonstrated. In addition, although the storage apparatus 1A is applied to an exposure apparatus here, you may apply the storage apparatus 1B, 1C, or 1D to an exposure apparatus. FIG. 10 is a schematic diagram showing the configuration of an exposure apparatus 505 as one aspect of the present invention. The exposure apparatus 505 is a lithography apparatus which is used in a lithography process as a manufacturing process of devices such as semiconductor elements and liquid crystal display elements, and forms a pattern on a substrate. The exposure device 505 exposes the substrate through the original plate, and transfers the pattern of the original plate onto the substrate. The exposure device 505 may adopt a step-and-scan method, a distributed repetition method, or other exposure methods. As shown in FIG. 10 , the exposure apparatus 505 includes an illumination optical system 501, a master stage 502 (master holding unit) that holds and moves the master, a projection optical system 503, a substrate stage 504 that holds and moves the substrate, and a storage device 1A. The illumination optical system 501 illuminates the original plate 11 held by the original plate stage 502 with light from a light source. The illumination optical system 501 includes lenses, mirrors, optical integrators, apertures, and the like. As the light source, lasers such as ArF excimer laser with a wavelength of about 193 nm, KrF excimer laser with a wavelength of about 248 nm, F 2 laser with a wavelength of about 157 nm, and YAG laser can be used, for example. The number of lasers used for the light source is not limited. When a laser is used as the light source, the illumination optical system 501 may include a shaping optical system for shaping laser light (parallel light) into a desired shape, or an incoherent optical system for incoherentizing coherent laser light. In addition, the light source is not limited to a laser, and lamps such as one or more mercury lamps or xenon lamps may be used. The projection optical system 503 projects the pattern of the original plate 11 on the substrate held by the substrate stage 504 . As the projection optical system 503, an optical system composed of only a plurality of lens elements, and an optical system (a catadioptric optical system) including a plurality of lens elements and at least one concave mirror can be used. In addition, as the projection optical system 503, an optical system including a plurality of lens elements and a diffractive optical element such as one diffractive imaging element, a total reflection mirror type optical system, or the like can be used. The storage device 1A stores (stores) the original plate 11 carried into the exposure device 505 from the outside of the exposure device 505 and conveyed to the original plate stage 502 . The storage device 1A does not require a large amount (large flow rate) of gas (purging gas) as described above, and can reduce the humidity of the storage space AS, which is the surrounding environment of the original plate 11 . Therefore, the original plate 11 conveyed from the storage device 1A to the original plate stage 502 and held by the original plate stage 502 can suppress the occurrence of blur at the time of exposure. Thereby, the exposure apparatus 505 can manufacture a high-quality device at low cost compared with the conventional, in the photolithography process of the manufacturing process of devices, such as a semiconductor element and a liquid crystal display element. The article manufacturing method in the embodiment of the present invention is suitable for manufacturing articles such as devices (semiconductor elements, magnetic memory media, liquid crystal display elements, etc.), for example. This manufacturing method includes the step of exposing the substrate to which the photosensitive agent has been applied (patterning on the substrate) using the exposure apparatus 505, and the step of developing the exposed substrate (processing the substrate). In addition, this manufacturing method can include other well-known processes (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method of the present embodiment is advantageous in at least one of the performance, quality, production efficiency, and production cost of the article compared to the conventional method. In addition, the above-mentioned article manufacturing method can also be performed using a lithography apparatus such as an imprint apparatus or a drawing apparatus. The present invention is not limited to the above-described embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. Therefore, the claims are attached in order to disclose the scope of the invention.

11:原版 12:保護構件 13:第1供給部(噴嘴) 14:圖案面 15:背面(第1面) 16:保護面(第2面) 17:第1氣流 18:第2氣流 19:第3氣流 20:壁構件 21:第2供給部 22:渦流 41:凸部 42:渦流 43:側壁 51:第3供給部 52:氣流 53:渦流 61:第4供給部 62:第4氣流 63:渦流 81:氣流 91:原版 92:背面 93:保護面 94:供給部 95:氣體(低濕度氣體) 96:渦流 101:原版 102:背面 103:保護面 104:氣體(低濕度氣體) 105:供給部 106:氣體(低濕度氣體) 107:渦流 108:腔體 109:開閉機構 110:收納空間 501:照明光學系統 502:原版載臺 503:投影光學系統 504:基板載臺 505:曝光裝置 1000:收納裝置 2000:收納裝置 12a:支撐框 19a:氣流 1A:收納裝置 1B:收納裝置 1C:收納裝置 1D:收納裝置 20a:接受面 AS:收納空間 BD:氣體的吹出方向 CP:搬運口 11: Original 12: Protective components 13: 1st supply part (nozzle) 14: Pattern Surface 15: Back (side 1) 16: Protective Surface (Side 2) 17: 1st airflow 18: 2nd airflow 19: 3rd Airflow 20: Wall Components 21: 2nd supply department 22: Eddy Current 41: convex part 42: Eddy Current 43: Sidewall 51: 3rd Supply Department 52: Airflow 53: Eddy Current 61: 4th Supply Department 62: 4th Airflow 63: Eddy Current 81: Airflow 91: Original 92: Back 93: Protective Surface 94: Supply Department 95: Gas (low humidity gas) 96: Eddy Current 101: Original 102: Back 103: Protective Surface 104: Gas (low humidity gas) 105: Supply Department 106: Gas (low humidity gas) 107: Eddy Current 108: Cavity 109: Opening and closing mechanism 110: Storage space 501: Illumination Optical System 502: Original stage 503: Projection Optical System 504: Substrate stage 505: Exposure device 1000: Storage device 2000: Storage Device 12a: Support frame 19a: Airflow 1A: Storage device 1B: Storage device 1C: Storage device 1D: Storage device 20a: Reception face AS: storage space BD: Blowing direction of gas CP: carrying port

[圖1]是表示本發明的第1實施方式中的收納裝置的構成的概略圖。 [圖2]是用於說明第1氣流的流量、第2氣流的流量和第3氣流的流量的關係的圖。 [圖3]是表示本發明的第1實施方式中的收納裝置的構成的概略圖。 [圖4]是表示本發明的第1實施方式中的收納裝置的構成的概略圖。 [圖5]是表示本發明的第1實施方式中的收納裝置的構成的概略圖。 [圖6]是表示本發明的第1實施方式中的收納裝置的構成的概略圖。 [圖7A]以及[圖7B]是表示本發明的第2實施方式中的收納裝置的構成的概略圖。 [圖8]是表示本發明的第3實施方式中的收納裝置的構成的概略圖。 [圖9]是表示本發明的第4實施方式中的收納裝置的構成的概略圖。 [圖10]是表示作為本發明的一個方面的曝光裝置的構成的概略圖。 [圖11]是表示現有技術中的收納裝置的構成的概略圖。 [圖12]是表示現有技術中的收納裝置的構成的概略圖。 1 is a schematic diagram showing the configuration of the storage device in the first embodiment of the present invention. 2 is a diagram for explaining the relationship between the flow rate of the first airflow, the flow rate of the second airflow, and the flow rate of the third airflow. [ Fig. 3] Fig. 3 is a schematic diagram showing the configuration of the storage device in the first embodiment of the present invention. [ Fig. 4] Fig. 4 is a schematic diagram showing the configuration of the storage device in the first embodiment of the present invention. [ Fig. 5] Fig. 5 is a schematic diagram showing the configuration of the storage device in the first embodiment of the present invention. [ Fig. 6] Fig. 6 is a schematic diagram showing the configuration of the storage device in the first embodiment of the present invention. [ Fig. 7A ] and [ Fig. 7B ] are schematic diagrams showing the configuration of the storage device in the second embodiment of the present invention. [ Fig. 8] Fig. 8 is a schematic diagram showing a configuration of a storage device in a third embodiment of the present invention. [ Fig. 9] Fig. 9 is a schematic diagram showing a configuration of a storage device in a fourth embodiment of the present invention. 10 is a schematic diagram showing the configuration of an exposure apparatus as one aspect of the present invention. [ Fig. 11 ] is a schematic diagram showing the configuration of a conventional storage device. [ Fig. 12 ] A schematic diagram showing the configuration of a conventional storage device.

1A:收納裝置 1A: Storage device

11:原版 11: Original

12:保護構件 12: Protective components

12a:支撐框 12a: Support frame

13:第1供給部(噴嘴) 13: 1st supply part (nozzle)

14:圖案面 14: Pattern Surface

15:背面(第1面) 15: Back (side 1)

16:保護面(第2面) 16: Protective Surface (Side 2)

17:第1氣流 17: 1st airflow

18:第2氣流 18: 2nd airflow

19:第3氣流 19: 3rd Airflow

20:壁構件 20: Wall Components

20a:接受面 20a: Reception face

21:第2供給部 21: 2nd supply department

22:渦流 22: Eddy Current

AS:收納空間 AS: storage space

BD:氣體的吹出方向 BD: Blowing direction of gas

CP:搬運口 CP: carrying port

Claims (14)

一種收納裝置，係收納原版，前述原版包含形成有圖案的圖案面，具有： 第1供給部，其係吹出並供給氣體而形成第1氣流以及第2氣流中的至少其中一方的氣流，前述第1氣流係沿著與前述原版的前述圖案面為相反側的第1面，前述第2氣流係沿著與保護構件的前述圖案面那側為相反側的第2面，前述保護構件被設置成離開前述圖案面而保護前述圖案面； 第2供給部，其係吹出並供給氣體而形成第3氣流，前述第3氣流係與由前述第1供給部形成的前述至少一方的氣流干涉；以及 構件，其係包含與從前述第2供給部吹出的氣體的吹出方向交叉並用於接受由前述第2供給部形成的前述第3氣流的接受面； 其中， 前述第1供給部係以用於搬運前述原版的搬運口為基準而配置在收納前述原版的收納空間的進深側； 前述第2供給部係以前述搬運口為基準而配置在前述收納空間的近前側。 A storage device is used to store an original plate, wherein the original plate includes a pattern surface formed with a pattern, and has: A first supply unit that blows and supplies gas to form at least one of a first airflow and a second airflow, the first airflow being along a first surface on the opposite side of the pattern surface of the original plate, The second airflow is along a second surface opposite to the pattern surface side of the protection member, and the protection member is arranged to be separated from the pattern surface to protect the pattern surface; a second supply part that blows and supplies gas to form a third airflow, and the third airflow interferes with the at least one airflow formed by the first supply part; and a member including a receiving surface for receiving the third gas flow formed by the second supply part, intersecting the blowing direction of the gas blown from the second supply part; in, The first supply part is arranged on the back side of the storage space for storing the original plate with reference to a conveyance port for conveying the original plate; The said 2nd supply part is arrange|positioned on the front side of the said storage space with the said conveyance port as a reference. 如請求項1的收納裝置，其中， 前述第1供給部係吹出並供給氣體而形成從前述收納空間的進深側朝向前述收納空間的近前側的一個方向的氣流，作為前述至少一方氣流。 The storage device of claim 1, wherein, The said 1st supply part blows and supplies gas, and forms the air flow in one direction from the back side of the said storage space toward the front side of the said storage space as the said at least one air flow. 如請求項1的收納裝置，其中， 前述第2供給部係吹出並供給氣體而形成與由前述第1供給部形成的前述至少一方氣流碰撞的氣流，作為前述第3氣流。 The storage device of claim 1, wherein, The said 2nd supply part blows out and supplies gas, and forms the airflow which collides with the said at least one airflow formed by the said 1st supply part, and is used as the said 3rd airflow. 如請求項1的收納裝置，其中， 前述構件被配置成，前述接受面在與前述圖案面正交的方向上位於比前述第2面靠下方的位置。 The storage device of claim 1, wherein, The said member is arrange|positioned so that the said receiving surface may be located in the downward position rather than the said 2nd surface in the direction orthogonal to the said pattern surface. 如請求項1的收納裝置，其中， 前述構件被配置成，在與前述圖案面正交的方向上的前述接受面與前述第2供給部的氣體的吹出口之間的距離為10mm以上且500mm以下。 The storage device of claim 1, wherein, The said member is arrange|positioned so that the distance between the said receiving surface in the direction orthogonal to the said pattern surface and the blower outlet of the gas of the said 2nd supply part may be 10 mm or more and 500 mm or less. 如請求項1的收納裝置，其中， 前述接受面係相對於前述保護構件的前述第2面在沿著前述第2面的方向上在自前述第2面起向外側為0mm以上且300mm以下的範圍內延伸。 The storage device of claim 1, wherein, The said receiving surface is extended in the range of 0 mm or more and 300 mm or less from the said 2nd surface outward with respect to the said 2nd surface of the said protection member in the direction along the said 2nd surface. 如請求項1的收納裝置，其中， 前述第1供給部係吹出並供給氣體而形成前述第1氣流以及前述第2氣流； 前述第3氣流的流量係小於前述第1氣流的流量與前述第2氣流的流量之和。 The storage device of claim 1, wherein, The first supply part blows and supplies gas to form the first airflow and the second airflow; The flow rate of the third airflow is smaller than the sum of the flow rate of the first airflow and the flow rate of the second airflow. 如請求項1的收納裝置，其中， 前述接受面包含：向前述第2供給部那側突出的凸部。 The storage device of claim 1, wherein, The said receiving surface contains the convex part which protrudes toward the said 2nd supply part side. 如請求項1的收納裝置，其中， 前述第1供給部係吹出並供給氣體而僅形成前述第1氣流； 前述收納裝置還具有第3供給部，該第3供給部係被設置成與前述保護構件的前述第2面相對向，並朝向前述第2面吹出並供給氣體。 The storage device of claim 1, wherein, The first supply part blows and supplies gas to form only the first airflow; The said storage apparatus further has a 3rd supply part provided so that it may oppose the said 2nd surface of the said protection member, and the said 3rd supply part blows and supplies gas toward the said 2nd surface. 如請求項1的收納裝置，其中，還具有： 第4供給部，其係被設置於前述構件，並吹出並供給氣體而形成第4氣流，前述第4氣流與由前述第1供給部形成的前述至少一方氣流干涉且與由前述第2供給部形成的前述第3氣流相對向。 The storage device of claim 1, further comprising: A fourth supply unit is provided on the member and blows out and supplies gas to form a fourth gas flow, the fourth gas flow interferes with the at least one gas flow formed by the first supply section and with the second supply section The formed third air flow is opposed to each other. 如請求項1的收納裝置，其中， 前述收納裝置收納多個前述原版； 相對於前述原版分別設置有前述第2供給部以及前述構件。 The storage device of claim 1, wherein, The aforementioned storage device accommodates a plurality of the aforementioned original plates; The said 2nd supply part and the said member are provided with respect to the said original plate, respectively. 如請求項1的收納裝置，其中， 前述氣體包含濕度為1%以下的氣體。 The storage device of claim 1, wherein, The aforementioned gas includes a gas whose humidity is 1% or less. 一種曝光裝置，係對基板進行曝光，具有： 收納部，其係收納原版，前述原版包含形成有圖案的圖案面； 原版保持部，其係保持從前述收納部所搬運的前述原版；以及 投影光學系統，其係將前述原版保持部所保持的前述原版的圖案投影到前述基板上； 其中， 前述收納部具有： 第1供給部，其係吹出並供給氣體而形成第1氣流以及第2氣流中的至少其中一方的氣流，前述第1氣流係沿著與前述原版的前述圖案面為相反側的第1面，前述第2氣流係沿著與保護構件的前述圖案面那側為相反側的第2面，前述保護構件被設置成離開前述圖案面而保護前述圖案面； 第2供給部，其係吹出並供給氣體而形成第3氣流，前述第3氣流係與由前述第1供給部形成的前述至少一方的氣流干涉；以及 構件，其係包含與從前述第2供給部吹出的氣體的吹出方向交叉並用於接受由前述第2供給部形成的前述第3氣流的接受面； 其中， 前述第1供給部係以用於搬運前述原版的搬運口為基準而配置在收納前述原版的收納空間的進深側； 前述第2供給部係以前述搬運口為基準而配置在前述收納空間的近前側。 An exposure device for exposing a substrate, comprising: an accommodating part for accommodating an original plate, wherein the original plate includes a pattern surface formed with a pattern; an original plate holding portion for holding the aforementioned original plate conveyed from the aforementioned storage portion; and a projection optical system for projecting the pattern of the original plate held by the original plate holding part onto the substrate; in, The aforementioned storage part has: A first supply unit that blows and supplies gas to form at least one of a first airflow and a second airflow, the first airflow being along a first surface on the opposite side of the pattern surface of the original plate, The second airflow is along a second surface opposite to the pattern surface side of the protection member, and the protection member is arranged to be separated from the pattern surface to protect the pattern surface; a second supply part that blows and supplies gas to form a third airflow, and the third airflow interferes with the at least one airflow formed by the first supply part; and a member including a receiving surface for receiving the third gas flow formed by the second supply part, intersecting the blowing direction of the gas blown from the second supply part; in, The first supply part is arranged on the back side of the storage space for storing the original plate with reference to a conveyance port for conveying the original plate; The said 2nd supply part is arrange|positioned on the front side of the said storage space with the said conveyance port as a reference. 一種物品的製造方法，具有： 使用請求項13的曝光裝置對基板進行曝光的工序； 對經過曝光的前述基板進行顯影的工序；以及 從經過顯影的前述基板來製造物品的工序。 A method of making an article, having: A process of exposing a substrate using the exposure apparatus of claim 13; a process of developing the exposed substrate; and A process of manufacturing an article from the developed substrate.
TW110138110A 2020-12-16 2021-10-14 Storage device, exposure device and method for manufacturing article TWI841869B (en)

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