TW202214918A

TW202214918A - Systems and methods for reduced swinging and dropping of silicon crystals during production of silicon

Info

Publication number: TW202214918A
Application number: TW110127209A
Authority: TW
Inventors: 徵陸; 陳智勇; 蔡豐鍵; 林姍慧
Original assignee: 環球晶圓股份有限公司
Priority date: 2020-07-23
Filing date: 2021-07-23
Publication date: 2022-04-16
Also published as: JP2023536410A; CN116096946A; WO2022020551A1

Abstract

A method for producing a silicon ingot by the Czochralski method includes rotating a crucible containing a silicon melt, contacting the silicon melt with a seed crystal, withdrawing the seed crystal from the silicon melt along an axis of symmetry while rotating the crucible about the axis of symmetry to form a silicon ingot, and inducing currents in the silicon ingot to oppose movement of the silicon ingot away from the axis of symmetry.

Description

用於減少矽生產過程中的矽晶體搖晃及跌落的系統及方法System and method for reducing silicon crystal shake and drop during silicon production

本發明大體上係關於矽晶錠之生產，且更明確言之，本發明係關於用於減少矽生產過程中之矽晶體搖晃及跌落(例如由於地震)之系統及方法。The present invention generally relates to the production of silicon ingots, and more specifically, the present invention relates to systems and methods for reducing shaking and falling of silicon crystals (eg, due to earthquakes) during silicon production.

在丘克拉斯基(Czochralski)晶體生長期間，由於振動、未對準、湍流氣流及其類似者，會發生不利於高品質晶體生長之矽晶體之軌道運行或搖晃。此外，在地震的情況下，晶體搖晃可能非常嚴重，以至晶體撞擊生長室或拉晶器之部件。當晶體擊中腔室或部件時，晶體及部件通常受損。在一些情況中，接觸可導致晶體之頸部斷裂及晶體跌落。任何晶體跌落可引起對部件及可能對拉晶器本身之嚴重損壞，以及對工具時間、材料及營收及其類似者之負面影響。跌落晶體本身通常受損且不可用。During Czochralski crystal growth, due to vibration, misalignment, turbulent airflow, and the like, orbiting or shaking of silicon crystals, which is not conducive to high-quality crystal growth, occurs. Additionally, in the event of an earthquake, crystal shaking can be so severe that the crystal strikes parts of the growth chamber or crystal puller. When the crystal hits the chamber or component, the crystal and component are often damaged. In some cases, contact can cause the neck of the crystal to break and the crystal to fall. Any crystal drop can cause serious damage to the components and possibly the crystal puller itself, as well as negatively impact tooling time, materials and revenue and the like. The drop crystal itself is usually damaged and unusable.

至少一些已知系統利用依賴於主動反向移動來減少或消除由軌道運行或地震引起之晶體中之移動之一阻尼裝置。歸因於假陽性信號處理或歸因於缺乏信號或信號敏感度或兩者而錯過異常事件(諸如一真實地震)，此等系統可能負面影響正常晶體生長。At least some known systems utilize a damping device that relies on active reverse movement to reduce or eliminate movement in the crystal caused by orbiting or earthquakes. Such systems may negatively affect normal crystal growth due to false positive signal processing or missing anomalous events (such as a true earthquake) due to lack of signal or signal sensitivity or both.

因此，存在對在矽生產期間自動且可靠地減少晶體之搖晃及跌落而不透過錯誤偵測負面影響晶體生長之方法及系統之一需要。Accordingly, there exists a need for a method and system for automatically and reliably reducing crystal shake and drop during silicon production without negatively affecting crystal growth through false detection.

[先前技術]部分意在向讀者介紹可與本發明之各種態樣相關之技術之各種態樣，該等態樣在下文中描述及/或主張。據信此討論有助於為讀者提供背景資訊以促進較佳理解本發明之各種態樣。因此，應瞭解，此等陳述係在此意義上閱讀且並非作為先前技術之認可。The [Prior Art] section is intended to introduce the reader to various aspects of technology that may be related to the various aspects of this disclosure, which are described and/or claimed below. This discussion is believed to be helpful in providing the reader with background information to facilitate a better understanding of the various aspects of the present invention. Accordingly, it should be understood that these statements are read in this sense and are not admissions of prior art.

本發明之一態樣係一種用於生產一矽晶錠之晶體生長系統。該系統包含一真空室、安置於該真空室內之一坩堝、一拉引軸、一控制單元及至少一磁體。該坩堝可圍繞一對稱軸旋轉且經組態以固持包含熔融矽之一熔體。該拉引軸可沿該對稱軸移動且可圍繞該對稱軸旋轉，且經組態以固持一晶種。該控制單元包含一處理器及一記憶體。該記憶體儲存在由該處理器執行時引起該處理器自該坩堝中之該熔體撤回該晶種以形成該矽晶錠之指令。該至少一磁體誘發該矽晶錠中之電流以抵抗該矽晶錠遠離該對稱軸之移動。該至少一磁體經組態以在該熔體之一表面上方產生具有一非零磁通量梯度之一水平磁場，該磁通量梯度在該對稱軸周圍達到一最大值。One aspect of the present invention is a crystal growth system for producing a silicon ingot. The system includes a vacuum chamber, a crucible arranged in the vacuum chamber, a pulling shaft, a control unit and at least one magnet. The crucible is rotatable about an axis of symmetry and is configured to hold a melt comprising molten silicon. The pull axis is movable along and rotatable about the axis of symmetry, and is configured to hold a seed crystal. The control unit includes a processor and a memory. The memory stores instructions that, when executed by the processor, cause the processor to withdraw the seed from the melt in the crucible to form the silicon ingot. The at least one magnet induces a current in the silicon ingot to resist movement of the silicon ingot away from the axis of symmetry. The at least one magnet is configured to generate a horizontal magnetic field above a surface of the melt with a non-zero magnetic flux gradient that reaches a maximum around the symmetry axis.

本發明之另一態樣係一種用於藉由丘克拉斯基法來生產一矽晶錠之方法。該方法包含使含有一矽熔體之一坩堝旋轉，使該矽熔體與一晶種接觸，在該坩堝圍繞一對稱軸旋轉的同時沿該對稱軸自該矽熔體撤回該晶種以形成一矽晶錠，及誘發該矽晶錠中之電流以抵抗該矽晶錠遠離該對稱軸之移動。Another aspect of the present invention is a method for producing a silicon ingot by the Chukraski method. The method includes rotating a crucible containing a silicon melt, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt along the axis of symmetry while the crucible is rotated about an axis of symmetry to form a silicon ingot, and inducing a current in the silicon ingot to resist movement of the silicon ingot away from the axis of symmetry.

關於上文所提及之態樣所注意之特徵存在各種細分。進一步特徵亦可併入上文所提及之態樣中。此等改善及額外特徵可個別或依任何組合存在。例如，下文關於繪示實施例之任何者討論之各種特徵可單獨或依任何組合併入上文所描述之態樣中。There are various subdivisions of the features noted above for the aspect mentioned above. Further features may also be incorporated into the aspects mentioned above. These improvements and additional features may exist individually or in any combination. For example, various features discussed below with respect to any of the illustrated embodiments may be incorporated into the aspects described above, alone or in any combination.

相關申請案之交叉參考本申請案主張2020年7月23日申請之美國臨時專利申請案第63/055,426號之優先權，該案之全文以引用方式全部併入本文中。 Cross-references to related applications This application claims priority to US Provisional Patent Application No. 63/055,426, filed July 23, 2020, which is incorporated herein by reference in its entirety.

首先參考圖1及圖2，一實施例之一坩堝一般用10指示。坩堝10之一圓柱座標系包含一徑向方向R 12、一角度方向θ 14及一軸向方向Z 16。坩堝10含有具有一熔體表面36之一熔體25。一晶體27 (有時亦指稱晶錠27或矽晶錠27)自熔體25中生長。熔體25可含有藉由加熱坩堝10及在角方向θ 14上旋轉坩堝10及/或晶體27來誘發之一或多個對流流動池17、18。此等一或多個對流流動池17、18之結構及相互作用係經由調節一或多個程序參數及/或施加一磁場來調變，如下文將詳細描述。Referring first to Figures 1 and 2, one embodiment of a crucible is generally designated 10. A cylindrical coordinate system of the crucible 10 includes a radial direction R 12 , an angular direction θ 14 and an axial direction Z 16 . Crucible 10 contains a melt 25 having a melt surface 36 . A crystal 27 (also sometimes referred to as ingot 27 or silicon ingot 27 ) grows from melt 25 . The melt 25 may contain one or more convective flow cells 17 , 18 induced by heating the crucible 10 and rotating the crucible 10 and/or the crystal 27 in an angular direction θ 14 . The structure and interaction of the one or more convective flow cells 17, 18 are modulated by adjusting one or more program parameters and/or applying a magnetic field, as will be described in detail below.

圖3係繪示一晶體生長設備中施加至含有熔體25之坩堝10之一水平磁場的一圖式。如圖中所展示，坩堝10含有一晶體27自其生長之矽熔體25。熔體與晶體之間的轉變通常指稱晶體-熔體界面(替代地指稱熔體-晶體、固體-熔體或熔體-固體界面)且通常係非線性，例如相對於熔體表面呈凹面、凸面或鷗翼形。兩個磁極29對置放置以產生大致垂直於晶體生長方向且大致平行於熔體表面36之一磁場。磁極29可為一習知電磁體、一超導體電磁體或用於產生具有所要強度及磁通量梯度之水平磁場之任何其他適合磁體。水平磁場之施加產生沿軸向方向、在與流體運動相反之一方向上之勞倫茲力(Lorentz force)，驅動熔體對流之反向力。熔體中之對流因此被抑制，且界面附近之晶體中之軸向溫度梯度增加。熔體-晶體界面接著向上移動至晶體側以適應界面附近之晶體中增加之軸向溫度梯度且坩堝中熔體對流之貢獻減少。水平組態具有有效抑制熔體表面36處之對流之優點。再者，磁極29用於減少晶體27之搖晃及跌落，如下文將描述。FIG. 3 is a diagram illustrating a horizontal magnetic field applied to crucible 10 containing melt 25 in a crystal growth apparatus. As shown in the figure, crucible 10 contains a silicon melt 25 from which crystals 27 are grown. The transition between melt and crystal is often referred to as a crystal-melt interface (alternatively referred to as a melt-crystal, solid-melt, or melt-solid interface) and is often nonlinear, such as concave with respect to the melt surface, Convex or gull-wing. The two poles 29 are placed opposite to generate a magnetic field approximately perpendicular to the crystal growth direction and approximately parallel to the melt surface 36 . The pole 29 can be a conventional electromagnet, a superconductor electromagnet, or any other suitable magnet for generating a horizontal magnetic field of the desired strength and flux gradient. The application of the horizontal magnetic field produces a Lorentz force in the axial direction, in a direction opposite to the fluid motion, the opposite force driving melt convection. Convection in the melt is thus suppressed and the axial temperature gradient in the crystal near the interface increases. The melt-crystal interface then moves up to the crystal side to accommodate the increased axial temperature gradient in the crystal near the interface and the reduced contribution of melt convection in the crucible. The horizontal configuration has the advantage of effectively suppressing convection at the melt surface 36 . Furthermore, the poles 29 are used to reduce wobble and drop of the crystal 27, as will be described below.

圖4係一晶體生長系統100之一方塊圖。系統100採用一丘克拉斯基晶體生長方法來生產一矽半導體晶錠。在該實施例中，系統100經組態以生產具有一百五十毫米(150 mm)之一晶錠直徑、大於一百五十毫米(150 mm)、更具體而言在約150 mm至460 mm之一範圍內且甚至更具體而言約三百毫米(300 mm)之一直徑之一圓柱形半導體晶錠。在其他實施例中，系統100經組態以生產具有兩百毫米(200 mm)晶錠直徑或四百五十毫米(450 mm)晶錠直徑之一半導體晶錠。另外，在一實施例中，系統100經組態以生產具有至少九百毫米(900 mm)之一總晶錠長度之一半導體晶錠。在一些實施例中，系統經組態以生產具有一千九百五十毫米(1950 mm)、兩千二百五十毫米(2250 mm)、兩千三百五十毫米(2350 mm)或長於2350 mm之一長度之一半導體晶錠。在其他實施例中，系統100經組態以生產具有在約九百毫米(900 mm)至一千二百毫米(1200 mm)之範圍內、在約900毫米至約兩千毫米(2000 mm)之間或在約900毫米至約2500毫米(2500 mm)之間的一總晶錠長度之一半導體晶錠。在一些實施例中，系統經組態以生產具有大於2000 mm之一總晶錠長度之一半導體晶錠。FIG. 4 is a block diagram of a crystal growth system 100 . System 100 employs a Chukraski crystal growth method to produce a silicon semiconductor ingot. In this embodiment, the system 100 is configured to produce ingots having an ingot diameter of one hundred fifty millimeters (150 mm), greater than one hundred fifty millimeters (150 mm), and more specifically between about 150 mm and 460 mm A cylindrical semiconductor ingot with a diameter in the range of one mm and even more specifically about three hundred millimeters (300 mm). In other embodiments, the system 100 is configured to produce a semiconductor ingot having a two hundred millimeter (200 mm) ingot diameter or a four hundred fifty millimeter (450 mm) ingot diameter. Additionally, in one embodiment, the system 100 is configured to produce a semiconductor ingot having an overall ingot length of at least nine hundred millimeters (900 mm). In some embodiments, the system is configured to produce two thousand nine hundred fifty millimeters (1950 mm), two thousand two hundred fifty millimeters (2250 mm), two thousand three hundred fifty millimeters (2350 mm), or longer than A semiconductor ingot with a length of 2350 mm. In other embodiments, the system 100 is configured to produce products with a range of from about nine hundred millimeters (900 mm) to one thousand two hundred millimeters (1200 mm), from about 900 millimeters to about two thousand millimeters (2000 mm) A semiconductor ingot of a total ingot length between or between about 900 millimeters and about 2500 millimeters (2500 mm). In some embodiments, the system is configured to produce a semiconductor ingot having a total ingot length greater than 2000 mm.

晶體生長系統100包含一圍封坩堝10之一真空室101。一側部加熱器105 (例如一電阻加熱器)環繞坩堝10。一底部加熱器106 (例如一電阻加熱器)定位於坩堝10下方。在加熱及拉晶期間，一坩堝驅動單元107 (例如一馬達)使坩堝10旋轉，例如在沿箭頭108所指示之順時針方向上旋轉。坩堝驅動單元107亦可在生長程序期間根據需要升高及/或降低坩堝10。坩堝10內係具有一熔體水平面或熔體表面36之矽熔體25。在操作中，系統100自附接至一拉引軸或纜線117之一晶種115開始自熔體25拉出一單晶27。拉引軸或纜線117之一端藉由一滑輪(圖中未展示)連接至一捲筒(圖中未展示)或任何其他適合類型之升降機構，例如一軸，且另一端連接至固持晶種115及自晶種115生長之晶體27之一夾盤(圖中未展示)。Crystal growth system 100 includes a vacuum chamber 101 enclosing crucible 10 . A side heater 105, such as a resistive heater, surrounds the crucible 10. A bottom heater 106 (eg, a resistive heater) is positioned below the crucible 10 . During heating and crystal pulling, a crucible drive unit 107 (eg, a motor) rotates the crucible 10 , eg, in a clockwise direction as indicated by arrow 108 . The crucible drive unit 107 may also raise and/or lower the crucible 10 as needed during the growth process. Inside crucible 10 is silicon melt 25 having a melt level or melt surface 36 . In operation, the system 100 begins pulling a single crystal 27 from the melt 25 from a seed crystal 115 attached to a pull shaft or cable 117 . One end of the pulling shaft or cable 117 is connected by a pulley (not shown) to a reel (not shown) or any other suitable type of lifting mechanism, such as a shaft, and the other end is connected to the holding seed crystal 115 and a chuck of crystal 27 grown from seed crystal 115 (not shown).

坩堝10及單晶27具有一共同對稱軸38。當熔體25耗盡時，坩堝驅動單元107可沿軸線38升高坩堝10以將熔體水平面36維持在一所要高度。一晶體驅動單元121類似地在坩堝驅動單元107旋轉坩堝10所沿之方向相反之一方向110上(例如，反向旋轉)旋轉拉引軸或纜線117。在使用共旋轉之實施例中，晶體驅動單元121可在坩堝驅動單元107旋轉坩堝10所沿之相同方向上(例如，在順時針方向上)旋轉拉引軸或纜線117。共旋轉亦可指稱一共轉。另外，晶體驅動單元121在生長過程中根據需要相對於熔體水平面36升高及降低晶體27。Crucible 10 and single crystal 27 have a common axis of symmetry 38 . When melt 25 is depleted, crucible drive unit 107 may raise crucible 10 along axis 38 to maintain melt level 36 at a desired height. A crystal drive unit 121 similarly rotates the pull shaft or cable 117 in a direction 110 opposite (eg, reverse rotation) in which the crucible drive unit 107 rotates the crucible 10 . In embodiments using co-rotation, crystal drive unit 121 may rotate pull shaft or cable 117 in the same direction in which crucible drive unit 107 rotates crucible 10 (eg, in a clockwise direction). Co-rotation can also refer to co-rotation. In addition, the crystal driving unit 121 raises and lowers the crystal 27 relative to the melt level 36 as needed during the growth process.

根據丘克拉斯基單晶生長程序，將一定量之多晶矽(polycrystalline silicon或polysilicon)充裝至坩堝10。一加熱器電源123為電阻加熱器105及106供電，且絕緣體125加襯於真空室101之內壁。當一真空泵131自真空室101移除氣體時，一氣體供應器127 (例如一瓶子)經由一氣流控制器129將氬氣供給至真空室101。被供給來自一儲器135之冷卻水之一外室133環繞真空室101。A certain amount of polycrystalline silicon (polysilicon) is filled into the crucible 10 according to the Chukraski single crystal growth procedure. A heater power supply 123 powers the resistance heaters 105 and 106 , and an insulator 125 lines the inner wall of the vacuum chamber 101 . When a vacuum pump 131 removes gas from the vacuum chamber 101 , a gas supply 127 (eg, a bottle) supplies argon gas to the vacuum chamber 101 via a gas flow controller 129 . The vacuum chamber 101 is surrounded by an outer chamber 133 supplied with cooling water from a reservoir 135 .

冷卻水接著被排放至一冷卻水回流歧管137。通常，諸如光電池139 (或高溫計)之一溫度感測器量測熔體25表面處之溫度，且一直徑傳感器141量測晶體27之一直徑。在該實施例中，系統100不包含一上部加熱器。存在上部加熱器或缺少上部加熱器改變晶體27之冷卻特性。The cooling water is then discharged to a cooling water return manifold 137 . Typically, a temperature sensor such as photovoltaic 139 (or pyrometer) measures the temperature at the surface of melt 25 and a diameter sensor 141 measures a diameter of crystal 27 . In this embodiment, the system 100 does not include an upper heater. The presence or absence of the upper heater changes the cooling characteristics of the crystal 27 .

磁極29定位於真空室101外以產生一水平磁場(如圖3中所展示)。儘管繪示為大致以熔體表面36為中心，但磁極29相對於熔體表面36之位置可變動以調整最大高斯平面(MGP)相對於熔體表面36之位置。一儲器153在經由冷卻水回流歧管137排放之前將冷卻水提供至磁極29。一鐵屏蔽體155環繞磁極29以減少雜散磁場且增強產生場之強度。The poles 29 are positioned outside the vacuum chamber 101 to generate a horizontal magnetic field (as shown in Figure 3). Although shown generally centered on the melt surface 36 , the position of the poles 29 relative to the melt surface 36 can be varied to adjust the position of the maximum Gaussian plane (MGP) relative to the melt surface 36 . A reservoir 153 provides cooling water to the poles 29 before being discharged through the cooling water return manifold 137 . An iron shield 155 surrounds the pole 29 to reduce stray magnetic fields and enhance the strength of the generated field.

一控制單元143用於調節複數個程序參數，包含(但不限於)晶體旋轉速率、坩堝旋轉速率及磁場強度之至少一者。在各種實施例中，控制單元143可包含一記憶體173及處理器144，處理器144處理自系統100之各種感測器(包含(但不限於)光電池139及直徑傳感器141)接收之信號，以及控制系統100之一或多個裝置，包含(但不限於)：坩堝驅動單元107、晶體驅動單元121、加熱器電源123、真空泵131、氣流控制器129 (例如氬氣流控制器)、磁極電源149及151及其等之任何組合。記憶體173可儲存在由處理器144執行時引起處理器執行本文中所描述之一或多個方法之指令。即，指令將控制單元143組態為執行本文中所描述之一或多個方法、程序、流程及其類似者。A control unit 143 is used to adjust a plurality of program parameters, including (but not limited to) at least one of crystal rotation rate, crucible rotation rate, and magnetic field strength. In various embodiments, the control unit 143 may include a memory 173 and a processor 144 that processes signals received from various sensors of the system 100, including but not limited to the photocell 139 and the diameter sensor 141, and one or more devices of control system 100, including (but not limited to): crucible drive unit 107, crystal drive unit 121, heater power supply 123, vacuum pump 131, gas flow controller 129 (eg, argon gas flow controller), magnetic pole power supply Any combination of 149 and 151 and their equivalents. Memory 173 may store instructions that, when executed by processor 144, cause the processor to perform one or more of the methods described herein. That is, the instructions configure the control unit 143 to perform one or more of the methods, procedures, processes and the like described herein.

控制單元143可為一電腦系統。如本文中所描述，電腦系統指代任何已知之運算裝置及電腦系統。如本文中所描述，所有此等電腦系統包含一處理器及一記憶體。然而，本文所指代之一電腦系統中之任何處理器亦可指代一或多個處理器，其中處理器可位於一運算裝置或並行作用之複數個運算裝置中。另外，本文所指代之一電腦裝置中之任何記憶體亦可指代一或多個記憶體，其中記憶體可位於一運算裝置或並行作用之複數個運算裝置中。此外，電腦系統可位於系統100附近(例如，在相同房間中，或在相鄰房間中)，或可遠程定位且經由一網路(諸如乙太網路、網際網路或其類似者)耦合至系統之剩餘部分。The control unit 143 can be a computer system. As described herein, a computer system refers to any known computing device and computer system. As described herein, all such computer systems include a processor and a memory. However, any reference herein to a processor in a computer system may also refer to one or more processors, where a processor may be located in one computing device or a plurality of computing devices operating in parallel. In addition, any memory in a computer device referred to herein may also refer to one or more memories, where memory may be located in a computing device or a plurality of computing devices operating in parallel. Additionally, the computer system may be located near system 100 (eg, in the same room, or in an adjacent room), or may be located remotely and coupled via a network (such as Ethernet, the Internet, or the like) to the rest of the system.

如本文使用之術語處理器係指中央處理單元、微處理器、微控制器、精簡指令集電路(RISC)、專用積體電路(ASIC)、邏輯電路及能夠執行本文中所描述之功能之任何其他電路或處理器。以上僅為實例，且因此決不旨在限制術語「處理器」之定義及/或含義。記憶體可包含(但不限於)隨機存取記憶體(RAM)(諸如動態RAM (DRAM)或靜態RAM (SRAM))、唯讀記憶體(ROM)、可擦除可程式化唯讀記憶體(EPROM)、電可擦除可程式化唯讀記憶體(EEPROM)及非揮發性RAM (NVRAM)。The term processor as used herein refers to a central processing unit, microprocessor, microcontroller, reduced instruction set circuit (RISC), application specific integrated circuit (ASIC), logic circuit and any other capable of performing the functions described herein other circuits or processors. The above are examples only, and are therefore in no way intended to limit the definition and/or meaning of the term "processor." Memory may include, but is not limited to, random access memory (RAM) such as dynamic RAM (DRAM) or static RAM (SRAM), read only memory (ROM), erasable programmable read only memory (EPROM), Electrically Erasable Programmable Read-Only Memory (EEPROM), and Nonvolatile RAM (NVRAM).

在一實施例中，提供一電腦程式以啟用控制單元143，且該程序體現於一電腦可讀媒體上。電腦可讀媒體可包含控制單元143之記憶體173。在一實例性實施例中，電腦系統在一單一電腦系統上執行。替代地，電腦系統可包括多個電腦系統、與一伺服器電腦之連接、一雲端運算環境或其類似者。在一些實施例中，電腦系統包含分佈於複數個運算裝置中之多個組件。一或多個組件可呈體現於一電腦可讀媒體中之電腦可執行指令之形式。In one embodiment, a computer program is provided to enable the control unit 143, and the program is embodied on a computer-readable medium. The computer-readable medium may include the memory 173 of the control unit 143 . In an exemplary embodiment, the computer system executes on a single computer system. Alternatively, the computer system may include multiple computer systems, connections to a server computer, a cloud computing environment, or the like. In some embodiments, a computer system includes a plurality of components distributed among a plurality of computing devices. One or more components may be in the form of computer-executable instructions embodied in a computer-readable medium.

電腦系統及程序不限於本文中所描述之特定實施例。另外，各電腦系統之組件及各程序都可獨立於及與本文中所描述之其他組件及程序分開實踐。各組件及程序亦可與其他總成封裝及程序結合使用。The computer systems and programs are not limited to the specific embodiments described herein. In addition, the components and procedures of each computer system can be practiced independently of and separately from other components and procedures described herein. Components and procedures may also be used in combination with other assembly packages and procedures.

在一實施例中，電腦系統可經組態以自一或多個感測器(包含(但不限於)：溫度感測器139、直徑傳感器141及其等之任何組合)接收量測，以及控制系統100之一或多個裝置，包含(但不限於)：坩堝驅動單元107、晶體驅動單元121、加熱器電源123、真空泵131、氣流控制器129 (例如一氬氣流控制器)、磁極電源149及151及其等之任何組合，如本文中所描述及在一實施例中在圖4中所繪示。電腦系統執行用於控制系統100之一或多個裝置之所有步驟，如本文中所描述。In one embodiment, the computer system may be configured to receive measurements from one or more sensors (including but not limited to: temperature sensor 139, diameter sensor 141, and any combination thereof), and One or more devices of control system 100, including (but not limited to): crucible drive unit 107, crystal drive unit 121, heater power supply 123, vacuum pump 131, gas flow controller 129 (eg, an argon gas flow controller), magnetic pole power supply Any combination of 149 and 151 and the like, as described herein and in one embodiment shown in FIG. 4 . The computer system performs all steps for controlling one or more devices of system 100, as described herein.

磁極29另外用於減少及防止(例如)歸因於地震之晶體27之搖晃及跌落。The magnetic poles 29 are additionally used to reduce and prevent shaking and falling of the crystal 27 due, for example, to earthquakes.

當諸如晶體27之一矽晶體移動通過一磁場時，晶體內誘發之渦流引起與此運動相反之一電磁力。儘管此阻尼或制動力歸因於典型磁場分佈之複雜性及晶體在生長期間被拉動時電導率分佈之複雜性而非常複雜，但該力一直與以下成比例：通過晶體之磁場通量密度B、運動方向上磁通量之空間梯度dB/dx、晶體之電導率、運動速度v及其類似者。矽晶體在生長溫度或接近生長溫度時係良導體，其中電導率σ約為10 ⁵S/m。藉由使用具有自1000高斯至5000高斯(0.1 T至0.5 T)之一磁通量密度B之磁極29以及高導電晶體，晶體在晶體之顯著偏心運動中產生之阻尼力相當大。增加磁通量梯度進一步增加用於抵抗晶體移動所產生之力。 When a silicon crystal such as crystal 27 moves through a magnetic field, eddy currents induced within the crystal cause an electromagnetic force that opposes this movement. Although this damping or braking force is very complex due to the complexity of the typical magnetic field distribution and the complexity of the conductivity distribution as the crystal is pulled during growth, the force is always proportional to the magnetic field flux density B through the crystal , the spatial gradient dB/dx of the magnetic flux in the moving direction, the electrical conductivity of the crystal, the moving speed v and the like. Silicon crystals are good conductors at or near the growth temperature, and the conductivity σ is about 10 ⁵ S/m. By using poles 29 with a magnetic flux density B of from 1000 to 5000 Gauss (0.1 T to 0.5 T) and a highly conductive crystal, the damping force produced by the crystal in the significant eccentric motion of the crystal is considerable. Increasing the magnetic flux gradient further increases the force against crystal movement.

因此，為減少晶錠27之搖晃及跌落，系統100包含且使用一磁體(例如磁極29)以晶錠27中誘發電流以抵抗晶錠27遠離對稱軸38之運動。磁極29經組態(即，設計、構建、組成、定向、定位及其類似者)以在熔體之表面36上方產生具有一非零磁通量梯度之一水平磁場。磁通量梯度在對稱軸38周圍達到一最大值。Thus, to reduce shaking and falling of ingot 27 , system 100 includes and uses a magnet (eg, pole 29 ) to induce a current in ingot 27 to resist movement of ingot 27 away from axis of symmetry 38 . The poles 29 are configured (ie, designed, constructed, composed, oriented, positioned, and the like) to generate a horizontal magnetic field with a non-zero magnetic flux gradient above the surface 36 of the melt. The magnetic flux gradient reaches a maximum around the axis of symmetry 38 .

磁極29在晶體27附近或周圍傳遞一強且均勻之水平磁場以熔化界面以及傳遞於矽熔體25內，且以對稱軸38為中心且定位。然而，在不影響正常晶體生長之區域(例如，在熔體表面36上方)中，磁極29之線圈經組態以產生一大磁通量梯度。就晶體27處之一強磁場及遠高於熔體25之晶體27處之一大磁通量梯度而言，每當晶體移動離開對稱軸38時，導電晶體27內誘發之渦流足夠強以抵消此非所要運動。此導致晶體27在無需任何感測器的情況下回應於離開對稱軸38之任何移動而沿對稱軸38自定心。離開對稱軸38之非所要移動越大及/或越快，使晶體27沿對稱軸38返回其中心軸之反作用力越大。當晶體27以對稱軸38為中心時，不存在反作用力，且因此不存在假陽性作用之風險及對正常晶體生長之相應負面影響。The poles 29 deliver a strong and uniform horizontal magnetic field near or around the crystal 27 to melt the interface and into the silicon melt 25, and are centered and positioned about the axis of symmetry 38. However, in regions that do not affect normal crystal growth (eg, above melt surface 36), the coils of poles 29 are configured to create a large magnetic flux gradient. With a strong magnetic field at the crystal 27 and a large magnetic flux gradient at the crystal 27 well above the melt 25, whenever the crystal moves away from the axis of symmetry 38, the eddy currents induced within the conducting crystal 27 are strong enough to counteract this inconvenience. desired movement. This causes the crystal 27 to self-center along the axis of symmetry 38 in response to any movement away from the axis of symmetry 38 without any sensors. The greater and/or faster the unwanted movement away from the axis of symmetry 38, the greater the reaction force that returns the crystal 27 to its central axis along the axis of symmetry 38. When the crystal 27 is centered on the axis of symmetry 38, there is no reaction force, and therefore there is no risk of false positive effects and corresponding negative effects on normal crystal growth.

圖5係用於晶體生長系統100之一磁性總成之一實例性線圈500。圖6係包含用於形成磁極29之圖5中所展示之兩個線圈之一磁性總成600。產生之磁通量梯度取決於線圈500之組態、形狀、尺寸及匝數。磁體總成600利用在相同方向上排列且包繞磁體外殼602內之一對鞍形線圈500。在實例性實施例中，圓柱形磁體外殼602具有1194 mm之一ID、1556 mm之OD及1088 mm之高度。各線圈500具有240匝，承載高達718安培之電流。其他實施例可使用包含不同線圈形狀、不同匝數、不同間距及其類似者之線圈及/或磁性總成。FIG. 5 is an example coil 500 for a magnetic assembly of the crystal growth system 100 . FIG. 6 is a magnetic assembly 600 including one of the two coils shown in FIG. 5 used to form pole 29 . The resulting magnetic flux gradient depends on the configuration, shape, size, and number of turns of the coil 500 . Magnet assembly 600 utilizes a pair of saddle coils 500 aligned in the same direction and wrapped within magnet housing 602 . In an exemplary embodiment, the cylindrical magnet housing 602 has an ID of 1194 mm, an OD of 1556 mm, and a height of 1088 mm. Each coil 500 has 240 turns and carries up to 718 amps of current. Other embodiments may use coils and/or magnetic assemblies that include different coil shapes, different numbers of turns, different spacings, and the like.

在實例性實施例中，磁極29產生約1500高斯之一最大磁通量密度。在一些實施例中，磁極產生至少1500高斯之一最大磁通量密度。在其他實施例中，磁極29產生2200高斯或至少2200高斯之一最大磁通量密度。在其他實施例中，磁極產生介於1500高斯與5000高斯之間之一最大磁通量密度。在實例性實施例中，磁極29之線圈(圖中未展示)係超導線圈。替代地，線圈可由一習知導體製成。In an exemplary embodiment, the poles 29 produce a maximum magnetic flux density of about 1500 Gauss. In some embodiments, the poles produce a maximum magnetic flux density of at least 1500 Gauss. In other embodiments, the poles 29 produce a maximum magnetic flux density of 2200 Gauss or at least one of 2200 Gauss. In other embodiments, the poles produce a maximum magnetic flux density between 1500 Gauss and 5000 Gauss. In an exemplary embodiment, the coils of poles 29 (not shown) are superconducting coils. Alternatively, the coil may be made of a known conductor.

如上所述，磁極29在熔體25內及晶體27與熔體表面36之間的界面處產生一相對均勻之磁通量密度(即，具有一非常低磁通量密度梯度)。在熔體25上方，磁極29產生沿水平方向變動且在對稱軸38周圍具有一最大值之一磁場。圖7係比較依據與對稱軸38 (由曲線圖中之半徑0指示)之距離而變化之熔體25內之磁通量密度702與熔體25上方之磁通量密度704之一模擬曲線圖700。熔體內之磁通量密度702及熔體上方之磁通量密度704兩者具有約2200高斯之一最大值。熔體25內之磁通量密度702之梯度幾乎為零，隨著與對稱軸之距離增加，變化非常小。然而，吾人可見，對於熔體25上方之磁通量密度704，變動及因此梯度在偏離軸中心(r=0)時明顯更大。事實上，熔體25上方之磁通量密度704展示在對稱軸38之約200毫米內磁通量減少約250高斯(或最大值之至少百分之十)。由於晶體27處之如此強之磁場，遠高於熔體25之晶體中之大梯度，導電晶體27內產生之渦流及因此每當晶體移動離開對稱軸38時抵抗移動之力足夠強以抑制此所要移動。As described above, the poles 29 produce a relatively uniform magnetic flux density (ie, with a very low magnetic flux density gradient) within the melt 25 and at the interface between the crystal 27 and the melt surface 36 . Above the melt 25, the poles 29 generate a magnetic field that varies horizontally and has a maximum around the axis of symmetry 38. 7 is a simulated graph 700 comparing magnetic flux density 702 within melt 25 and magnetic flux density 704 above melt 25 as a function of distance from symmetry axis 38 (indicated by radius 0 in the graph). Both the magnetic flux density 702 within the melt and the magnetic flux density 704 above the melt have a maximum value of about 2200 Gauss. The gradient of the magnetic flux density 702 within the melt 25 is almost zero, with very little variation with increasing distance from the axis of symmetry. However, we can see that for the magnetic flux density 704 above the melt 25, the variation and thus the gradient is significantly larger off-axis (r=0). In fact, the magnetic flux density 704 above the melt 25 shows a flux reduction of about 250 Gauss (or at least ten percent of the maximum value) within about 200 millimeters of the axis of symmetry 38 . With such a strong magnetic field at crystal 27, well above the large gradient in the crystal of melt 25, the eddy currents created within conducting crystal 27 and thus the forces resisting movement whenever the crystal moves away from symmetry axis 38 are strong enough to suppress this to be moved.

尖形磁系統不提供對晶體離開對稱軸之移動之阻尼。在33次地震中，關於使用尖形磁鐵及無振動阻尼之類似晶體生長系統之資料具有24.2%之一丟棄率。即，在系統經歷之33次地震中，24.2%中晶體自拉晶器脫落且掉落。基於資料及實驗，預期本發明之實例性系統具有6.7%或更高之丟棄率。6.7%之丟棄率係以使用較低高斯(例如1500高斯)磁鐵之系統為前提。當使用2200高斯磁鐵時，預期丟棄率係約0%。The pointed magnetic system does not provide damping against the movement of the crystal away from the axis of symmetry. In 33 earthquakes, data on similar crystal growth systems using pointed magnets and no vibration damping had a 24.2% drop rate. That is, of the 33 earthquakes the system experienced, 24.2% of the crystals were detached and dropped from the crystal puller. Based on data and experiments, exemplary systems of the present invention are expected to have a discard rate of 6.7% or higher. The 6.7% drop rate is premised on a system using a lower Gaussian (eg, 1500 Gauss) magnet. When using a 2200 Gaussian magnet, the expected drop rate is about 0%.

與先前方法及系統相比，本文中所描述之方法之實施例達成優異結果。例如，本文中所描述之方法及系統不接觸且不侵入正常晶體生長。系統始終在作用中。無需用於纜線或晶體移動之任何感測器，或用於偵測地震事件之任何地震計。即使因為反向移動或阻尼機制始終處於在作用中，亦不存在遺漏真正異常之風險。再者，特定設計之磁鐵誘發足夠強之力以抑制晶體之非所要移動。Embodiments of the methods described herein achieve superior results compared to previous methods and systems. For example, the methods and systems described herein do not contact and do not invade normal crystal growth. The system is always in action. There is no need for any sensors for movement of cables or crystals, or any seismometers for detecting seismic events. There is no risk of missing a true anomaly, even if the reverse movement or damping mechanism is always in action. Furthermore, the specially designed magnet induces a force strong enough to inhibit unwanted movement of the crystal.

當介紹本發明或其(若干)實施例之元件時，冠詞「一(a、an)」、「該」、「該等(the及said)」意欲意謂存在元件之一或多者。術語「包括」、「包含」及「具有」意在包含且意謂可存在除所列元件之外之額外元件。When introducing elements of the invention or the embodiment(s) thereof, the articles "a," "the," "the and said" are intended to mean that there are one or more of the elements. The terms "comprising," "including," and "having" are intended to include and mean that there may be additional elements other than the listed elements.

如本文中在整個說明書及申請專利範圍中所使用，近似語言可用於修飾可允許在不導致與其相關之基本功能改變的情況下變動之任何定量表示。因此，由諸如「約」、「近似」及「實質上」之一或多個術語修飾之一值不限於指定之精確值。在至少一些例項中，近似語言可對應於用於測量值之儀器之精度。此處及整個說明書及申請專利範圍中，範圍限制可組合及/或互換；此等範圍已確定且包含其中含有之所有子範圍，除非內文或語言另有指示。As used herein throughout the specification and claims, approximation language may be used to modify any quantitative representation that may allow variation without causing a change in the basic function with which it is associated. Thus, a value modified by one or more terms such as "about", "approximately" and "substantially" is not limited to the precise value specified. In at least some instances, the approximation language may correspond to the precision of the instrument used to measure the value. Here and throughout the specification and claimed scope, range limitations may be combined and/or interchanged; such ranges are identified and include all subranges contained therein unless context or language indicates otherwise.

由於可在不背離本發明之範疇的情況下在上文中進行各種改變，所以旨在應將以上描述中所含及附圖中所展示之所有事項解譯為闡釋性且非限制意義。As various changes could be made in the above without departing from the scope of the invention, it is intended that all matter contained in the above description and shown in the accompanying drawings shall be interpreted in an illustrative and non-limiting sense.

10:坩堝 12:徑向方向 14:角度方向 16:軸向方向 17:對流流動池 18:對流流動池 25:熔體 27:晶體 29:磁極 36: (熔體)表面/熔體水平面 38:軸(對稱) 100: (晶體生長)系統 101:真空室 105:側部加熱器 106:底部加熱器 107:坩堝驅動單元 108:箭頭 110:方向 115:晶種 117:拉引軸/纜線 121:晶體驅動單元 123:加熱器電源 125:絕緣體 127:氣體供應器 129:氣流控制器 131:真空泵 133:外室 135:儲器 137:冷卻水回流歧管 139:光電池 141:直徑傳感器 143:控制單元 144:處理器 149:磁極電源 151:磁極電源 153:儲器 155:鐵屏蔽體 173:記憶體 500:線圈 600:磁性總成 602:圓柱形磁體外殼 700:模擬曲線圖 702:磁通量密度 704:磁通量密度 10: Crucible 12: Radial direction 14: Angular direction 16: Axial direction 17: Convective Flow Cell 18: Convective Flow Cell 25: Melt 27: Crystals 29: Magnetic Pole 36: (melt) surface/melt level 38: Axis (symmetric) 100: (Crystal Growth) System 101: Vacuum Chamber 105: Side heater 106: Bottom heater 107: Crucible drive unit 108: Arrow 110: Directions 115: Seed 117: Pull shaft/cable 121: Crystal drive unit 123: Heater power supply 125: Insulator 127: Gas supply 129: Airflow Controller 131: Vacuum pump 133: Outer Room 135: Storage 137: Cooling water return manifold 139: Photocell 141: Diameter sensor 143: Control Unit 144: Processor 149: Magnetic pole power supply 151: Magnetic pole power supply 153: Storage 155: Iron shield 173: Memory 500: Coil 600: Magnetic assembly 602: Cylindrical magnet housing 700: Analog Graph 702: Magnetic flux density 704: Magnetic flux density

圖1係一實施例之一坩堝之一俯視圖。Figure 1 is a top view of an embodiment of a crucible.

圖2係圖1中所展示之坩堝之一側視圖。FIG. 2 is a side view of the crucible shown in FIG. 1 .

圖3係繪示一晶體生長設備中施加至含有一熔體之一坩堝之一水平磁場的一示意圖。3 is a schematic diagram illustrating a horizontal magnetic field applied to a crucible containing a melt in a crystal growth apparatus.

圖4係一晶體生長系統之一方塊圖。Figure 4 is a block diagram of a crystal growth system.

圖5係圖4中所展示之晶體生長系統之一磁體之一實例性線圈。FIG. 5 is an example coil of one of the magnets of the crystal growth system shown in FIG. 4 .

圖6係包含圖5中所展示之線圈之一磁性總成。FIG. 6 is a magnetic assembly including the coil shown in FIG. 5 .

圖7係比較依據與對稱軸之距離而變化之熔體內之磁通量密度與熔體上方之磁通量密度之一曲線圖。Figure 7 is a graph comparing the magnetic flux density within the melt and the magnetic flux density above the melt as a function of distance from the axis of symmetry.

各種圖式中之相同元件符號指示相同元件。The same reference numerals in the various figures indicate the same elements.

10:坩堝 10: Crucible

25:熔體 25: Melt

27:晶體 27: Crystals

29:磁極 29: Magnetic Pole

Claims

一種用於生產結晶材料之一晶錠之晶體生長系統，該系統包括：一腔室；一坩堝，其安置於該腔室內，該坩堝可圍繞一對稱軸旋轉且經塑形以固持一熔體；一拉引軸，其可沿該對稱軸移動且可圍繞該對稱軸旋轉，且經組態以固持一晶種；一控制單元，其包括一處理器及一記憶體，該記憶體儲存在由該處理器執行時引起該處理器自該坩堝中之該熔體撤回該晶種以形成該晶錠之指令，及一磁體，其用於誘發該晶錠中之電流以抵抗該晶錠遠離該對稱軸之移動，該磁體經安置以在該熔體之一表面上方產生具有一非零磁通量梯度之一水平磁場，該磁通量梯度在該對稱軸周圍達到一最大值。 A crystal growth system for producing an ingot of crystalline material, the system comprising: a chamber; a crucible positioned within the chamber, the crucible rotatable about an axis of symmetry and shaped to hold a melt; a pull axis movable along and rotatable about the axis of symmetry and configured to hold a seed; a control unit comprising a processor and a memory storing instructions that, when executed by the processor, cause the processor to withdraw the seed crystal from the melt in the crucible to form the ingot, and a magnet for inducing a current in the ingot to resist movement of the ingot away from the axis of symmetry, the magnet positioned to generate a horizontal magnetic field with a non-zero magnetic flux gradient above a surface of the melt, The magnetic flux gradient reaches a maximum around the symmetry axis.

如請求項1之系統，其中該磁體經安置以在該熔體之該表面處產生具有一較低磁通量梯度之該水平磁場。The system of claim 1, wherein the magnet is positioned to generate the horizontal magnetic field with a lower magnetic flux gradient at the surface of the melt.

如請求項2之系統，其中該熔體之該表面處之該較低磁通量梯度實質上為零。The system of claim 2, wherein the lower magnetic flux gradient at the surface of the melt is substantially zero.

如請求項1之系統，其中該磁體經組態以產生該非零磁通量梯度，其中磁通量在該對稱軸之約200毫米內減少該最大值之至少百分之十。The system of claim 1, wherein the magnet is configured to generate the non-zero magnetic flux gradient, wherein the magnetic flux decreases by at least ten percent of the maximum value within about 200 millimeters of the axis of symmetry.

如請求項1之系統，其中該至少一磁體包括具有一導電線圈之一電磁體。The system of claim 1, wherein the at least one magnet includes an electromagnet having a conductive coil.

如請求項5之系統，其中該導電線圈包括一超導線圈。The system of claim 5, wherein the conductive coil comprises a superconducting coil.

如請求項1之系統，其中該磁體經組態以產生具有至少1500高斯之一最大磁通量密度之該水平磁場。The system of claim 1, wherein the magnet is configured to generate the horizontal magnetic field having a maximum magnetic flux density of at least 1500 Gauss.

如請求項7之系統，其中該磁體經組態以產生具有至少2200高斯之一最大磁通量密度之該水平磁場。The system of claim 7, wherein the magnet is configured to generate the horizontal magnetic field having a maximum magnetic flux density of at least 2200 Gauss.

一種使用任何前述請求項之系統來生產之矽晶錠。A silicon ingot produced using the system of any preceding claim.

如請求項9之矽晶錠，其中該矽晶錠在一地震期間使用請求項1之系統來產生而無斷裂。The silicon ingot of claim 9, wherein the silicon ingot is produced without fracture using the system of claim 1 during an earthquake.

一種自請求項9之一矽晶錠產生之晶圓。A wafer produced from the silicon ingot of claim 9.

一種用於藉由丘克拉斯基法來產生一矽晶錠之方法，該方法包括：旋轉含有一矽熔體之一坩堝；使該矽熔體與一晶種接觸；在使該坩堝圍繞一對稱軸旋轉的同時沿該對稱軸自該矽熔體撤回該晶種以形成一矽晶錠；及誘發該矽晶錠中之電流以抵抗該矽晶錠遠離該對稱軸之移動。 A method for producing a silicon ingot by the Chukraski method, the method comprising: rotating a crucible containing a silicon melt; contacting the silicon melt with a seed crystal; withdrawing the seed crystal from the silicon melt along the axis of symmetry while rotating the crucible about an axis of symmetry to form a silicon ingot; and A current in the silicon ingot is induced to resist movement of the silicon ingot away from the axis of symmetry.

如請求項12之方法，其中誘發該矽晶錠中之電流以抵抗該矽晶錠遠離該對稱軸之移動包括使用磁體以在該矽熔體之一表面上方產生具有一非零磁通量梯度之一水平磁場，該磁通量梯度在該對稱軸周圍達到一最大值。The method of claim 12, wherein inducing a current in the silicon ingot to resist movement of the silicon ingot away from the axis of symmetry comprises using a magnet to generate a magnetic flux gradient having a non-zero magnetic flux over a surface of the silicon melt Horizontal magnetic field, the magnetic flux gradient reaches a maximum around the symmetry axis.

如請求項13之方法，其進一步包括使用該磁體以在該熔體之該表面處產生具有一較低磁通量梯度之該水平磁場。The method of claim 13, further comprising using the magnet to generate the horizontal magnetic field with a lower magnetic flux gradient at the surface of the melt.

如請求項14之方法，其中該熔體之該表面處之該較低磁通量梯度實質上為零。The method of claim 14, wherein the lower magnetic flux gradient at the surface of the melt is substantially zero.

如請求項13之方法，其中使用該磁體來產生該水平磁場包括使用該磁體來產生該非零磁通量梯度，其中磁通量在該對稱軸之約200毫米內減少該最大值之至少百分之十。The method of claim 13, wherein using the magnet to generate the horizontal magnetic field comprises using the magnet to generate the non-zero magnetic flux gradient, wherein the magnetic flux decreases by at least ten percent of the maximum value within about 200 millimeters of the symmetry axis.

如請求項13之方法，其中使用一磁體來產生該水平磁場包括使用具有一導電線圈之一電磁體。The method of claim 13, wherein using a magnet to generate the horizontal magnetic field includes using an electromagnet having a conductive coil.

如請求項17之方法，其中使用具有一導電線圈之至少一電磁體包括使用具有一超導線圈之一磁體。18. The method of claim 17, wherein using at least one electromagnet with a conductive coil includes using a magnet with a superconducting coil.

如請求項13之方法，其中使用一磁體來產生該水平磁場包括使用一磁體來產生具有至少1500高斯之一最大磁通量密度之該水平磁場。The method of claim 13, wherein using a magnet to generate the horizontal magnetic field comprises using a magnet to generate the horizontal magnetic field having a maximum magnetic flux density of at least 1500 Gauss.

如請求項19之方法，其中使用一磁體來產生該水平磁場包括使用一磁體來產生具有至少2200高斯之一最大磁通量密度之該水平磁場。The method of claim 19, wherein using a magnet to generate the horizontal magnetic field comprises using a magnet to generate the horizontal magnetic field having a maximum magnetic flux density of at least 2200 Gauss.

一種使用請求項13之方法來生產之矽晶錠。A silicon ingot produced using the method of claim 13.

如請求項21之矽晶錠，其中該矽晶錠在一地震期間產生而無斷裂。The silicon ingot of claim 21, wherein the silicon ingot is produced without fracture during an earthquake.

一種自請求項13之一矽晶錠產生之晶圓。A wafer produced from a silicon ingot of claim 13.