TW202142965A

TW202142965A - Pattern transfer method for seamless hologram

Info

Publication number: TW202142965A
Application number: TW109115442A
Authority: TW
Inventors: 林劉恭
Original assignee: 光群雷射科技股份有限公司
Priority date: 2020-05-08
Filing date: 2020-05-08
Publication date: 2021-11-16
Also published as: TWI822997B

Abstract

A pattern transfer method for seamless hologram is provided herein. The present invention includes the following steps. A cylindrical roller having a first light sensitive layer is provided. A first patterned light sensitive layer is formed by performing a lithography process on the first light sensitive layer with a predefined pattern and a light with a first wavelength. A mother film carrier is provided and a film-to-film pattern transfer process is performed so that the pattern of the first patterned light sensitive layer can be transferred on the mother film carrier. The present invention utilizes the light sensitive layer in an imprinting process, therefore the yield-cost optimization can be achieved.

Description

無縫全像圖圖案轉移方法Seamless holographic pattern transfer method

本發明是有關一種全像圖圖案轉移製程，尤指一種形成無接縫全像圖的圖案轉移方法。The invention relates to a holographic image pattern transfer process, in particular to a pattern transfer method for forming a seamless holographic image.

以往在製作全像圖圖案轉移時，請參考圖1，先於滾輪10上組裝薄片狀的全像版11，再將全像版11上的全像紋路圖案轉移至材料20上，使材料20具有相對應的全像紋路圖案21。上述全像紋路圖案轉移方式，轉移後的材料20上兩相鄰的全像紋路圖案21之間，會留下對應於全像板11的接縫12的間隙22。因此，轉移後的材料20在後續使用時，因為間隙22的存在而會造成材料20極大的浪費。一種改良的技術如圖3所示，利用製作光阻、顯影以將圖案轉移，其中當形成光阻層時，滾輪10傾斜設置，光阻材料係利用滴塗(drip coating)的方式慢慢塗佈於滾輪10上，此種製程程序需耗費十幾個工作天，且塗佈的均勻度不是非常好。In the past, when making holographic pattern transfer, please refer to Figure 1. First assemble a sheet-like holographic plate 11 on the roller 10, and then transfer the holographic pattern on the holographic plate 11 to the material 20 to make the material 20 There is a corresponding holographic pattern 21. In the above-mentioned holographic texture pattern transfer method, a gap 22 corresponding to the seam 12 of the holographic plate 11 will be left between two adjacent holographic texture patterns 21 on the transferred material 20. Therefore, when the transferred material 20 is subsequently used, the material 20 will be greatly wasted due to the existence of the gap 22. An improved technique is shown in Figure 3, using photoresist and developing to transfer the pattern. When the photoresist layer is formed, the roller 10 is arranged obliquely, and the photoresist material is slowly applied by drip coating. It takes more than ten working days for this kind of process to be placed on the roller 10, and the uniformity of the coating is not very good.

有鑑於上述習知結構之缺失，製造品質良好、符合成本效益又適合於全像圖圖案轉移的圖案轉移方法便是目前極需努力的目標。In view of the deficiencies of the above-mentioned conventional structures, a pattern transfer method with good manufacturing quality, cost-effectiveness and suitable for holographic pattern transfer is a goal that needs to be worked hard at present.

本發明提供一種無縫全像圖圖案轉移方法，利用感光膠製程來執行圓柱形滾輪的轉印製程，以達良率及成本最佳化。The present invention provides a seamless holographic pattern transfer method, which utilizes the photosensitive glue manufacturing process to perform the transfer process of the cylindrical roller to optimize the yield and cost.

本發明一實施例之一種無縫全像圖圖案轉移方法，包括以下步驟：提供一圓柱形滾輪，其上具有一第一感光膠層。利用一預設圖案以一第一波長的光線對第一感光膠層進行一微影製程，以形成一第一圖案化感光膠層。提供一母版載體。以及進行一薄膜對薄膜圖案化製程，以將第一圖案化感光膠層之圖案轉移至母版載體上。其中薄膜對薄膜圖案化製程步驟包含：於母版載體上塗佈一第二感光膠層；使第一圖案化感光膠層壓印於第二感光膠層上；以及使用一第二波長的光線固化被壓印的第二感光膠層，使第二感光膠層圖案化成一第二圖案化感光膠層，其中第一波長不同於第二波長。A seamless holographic pattern transfer method according to an embodiment of the present invention includes the following steps: providing a cylindrical roller with a first photosensitive adhesive layer thereon. A lithography process is performed on the first photoresist layer with light of a first wavelength using a preset pattern to form a first patterned photoresist layer. Provide a master carrier. And performing a film-to-film patterning process to transfer the pattern of the first patterned photoresist layer to the master carrier. The film-to-film patterning process includes: coating a second photoresist layer on the master carrier; laminating and printing the first patterned photoresist on the second photoresist layer; and using a second wavelength of light Curing the imprinted second photoresist layer to pattern the second photoresist layer into a second patterned photoresist layer, wherein the first wavelength is different from the second wavelength.

以下藉由具體實施例配合所附的圖式詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。The following detailed descriptions are provided with specific embodiments in conjunction with the accompanying drawings to make it easier to understand the purpose, technical content, features, and effects of the present invention.

以下將詳述本發明之各實施例，並配合圖式作為例示。除了這些詳細說明之外，本發明亦可廣泛地施行於其它的實施例中，任何所述實施例的輕易替代、修改、等效變化都包含在本發明之範圍內，並以申請專利範圍為準。在說明書的描述中，為了使讀者對本發明有較完整的瞭解，提供了許多特定細節；然而，本發明可能在省略部分或全部特定細節的前提下，仍可實施。此外，眾所周知的步驟或元件並未描述於細節中，以避免對本發明形成不必要之限制。圖式中相同或類似之元件將以相同或類似符號來表示。特別注意的是，圖式僅為示意之用，並非代表元件實際之尺寸或數量，有些細節可能未完全繪出，以求圖式之簡潔。Hereinafter, each embodiment of the present invention will be described in detail, and the drawings will be used as examples. In addition to these detailed descriptions, the present invention can also be widely implemented in other embodiments, and easy substitutions, modifications, and equivalent changes of any of the embodiments are included in the scope of the present invention, and the scope of the patent application is regarded as allow. In the description of the specification, in order to enable the reader to have a more complete understanding of the present invention, many specific details are provided; however, the present invention may still be implemented under the premise of omitting some or all of the specific details. In addition, well-known steps or elements are not described in details to avoid unnecessary limitation of the present invention. The same or similar elements in the drawings will be represented by the same or similar symbols. It should be noted that the drawings are for illustrative purposes only, and do not represent the actual size or quantity of the components. Some details may not be completely drawn in order to keep the drawings concise.

本發明之一實施例之一種無縫全像圖圖案轉移方法，其包括以下步驟：先以感光膠製程製作一預設圖案，並將預設圖案以感光膠製程轉移至一圓柱形滾輪上，而圓柱形滾輪上的圖案可在以適當方式，例如感光膠製程、電鑄方式(electroforming)或熱壓方式(hot embossing)轉移至其他載體上。圖案化之步驟詳細說明如下。A seamless holographic pattern transfer method according to an embodiment of the present invention includes the following steps: first, a preset pattern is made by a photosensitive glue process, and the preset pattern is transferred to a cylindrical roller by the photosensitive glue process. The pattern on the cylindrical roller can be transferred to other carriers in a suitable manner, such as a photoresist process, electroforming, or hot embossing. The steps of patterning are described in detail as follows.

請先參考圖4及圖5-1至圖5-3，圖4顯示本發明之一實施例之無縫全像圖圖案轉移方法之流程示意圖；而圖5-1至圖5-3顯示本發明之一實施例之圖案化感光層製造方法的結構剖視示意圖。首先，請參考圖5-1，提供一圓柱形滾輪100(substrate)，於一實施例中，圓柱形滾輪為金屬材質所製成，圓柱形滾輪100上具有一第一感光膠層200(步驟S100)，於一實施例中，第一感光膠層200為紫外線樹脂(UV resin)，且以適當方式形成於圓柱形滾輪100的表面上。接著，利用一預設圖案以一第一波長的光線對第一感光膠層200進行一微影製程(lithography)，以形成一第一圖案化感光膠層(步驟S101)，於圖5-2的圖示中可見，移除尚未固化的第一感光膠層201以形成第一圖案化感光膠層202。於一實施例中，請參考圖5-3，第一圖案化感光膠層202可為具有一連續正弦波圖案的感光膠層。於又一實施例中，連續正弦波圖案之兩正弦波之間距距離203介於0.4um(微米)至2.0um(微米)之間。連續正弦波圖案之任一正弦波的波幅高度204介於0.2um(微米)至1.5um(微米)之間。再者，提供一母版載體，於一實施例中，母版載體為聚乙烯對苯二甲酸酯(PET)材質所製成(步驟S102)，其可為薄膜型態。接著，進行一薄膜對薄膜(film-to-film)圖案化製程，以將第一圖案化感光膠層之圖案轉移至母版載體上(步驟S103)。Please refer to Figure 4 and Figures 5-1 to 5-3. Figure 4 shows a schematic flow diagram of a seamless holographic pattern transfer method according to an embodiment of the present invention; and Figures 5-1 to 5-3 show this A schematic cross-sectional view of the structure of a method for manufacturing a patterned photosensitive layer according to an embodiment of the invention. First, please refer to FIG. 5-1, a cylindrical roller 100 (substrate) is provided. In one embodiment, the cylindrical roller is made of a metal material, and the cylindrical roller 100 has a first photosensitive adhesive layer 200 (step S100). In one embodiment, the first photoresist layer 200 is UV resin and is formed on the surface of the cylindrical roller 100 in a suitable manner. Next, perform a lithography process on the first photoresist layer 200 using a predetermined pattern and a first wavelength of light to form a first patterned photoresist layer (step S101), as shown in FIG. 5-2 As can be seen in the figure, the uncured first photoresist layer 201 is removed to form the first patterned photoresist layer 202. In one embodiment, referring to FIG. 5-3, the first patterned photoresist layer 202 may be a photoresist layer with a continuous sine wave pattern. In another embodiment, the distance 203 between the two sine waves of the continuous sine wave pattern is between 0.4 um (micrometer) and 2.0 um (micrometer). The amplitude height 204 of any sine wave of the continuous sine wave pattern is between 0.2 um (micrometer) and 1.5 um (micrometer). Furthermore, a master carrier is provided. In one embodiment, the master carrier is made of polyethylene terephthalate (PET) material (step S102), which may be in the form of a film. Then, a film-to-film patterning process is performed to transfer the pattern of the first patterned photoresist layer to the master carrier (step S103).

接續上述，請參考圖6及圖7，其中薄膜對薄膜圖案化製程步驟包含：首先，於母版載體300上以適當方式塗佈一第二感光膠層400(步驟S104)。接著，使第一圖案化感光膠202層壓印於第二感光膠層400上(步驟S105)。再來，使用一第二波長的光線500固化被壓印的第二感光膠層400，使第二感光膠層400圖案化成一第二圖案化感光膠層401，其中第一波長不同於第二波長(步驟S106)。於一實施例中，第一波長為365nm(奈米)，而該第二波長為405nm(奈米)，然而，可以理解的是，依據不同需求或製程工序，第一波長可為405nm(奈米)，而該第二波長為365nm(奈米)。於又一實施例中，請參考圖7，使第一圖案化感光膠層202壓印於第二感光膠層400上的步驟包含：提供圓柱形滾輪100設置於該母版載體300上方，且提供該第二波長的光線500於母版載體300下方；使圓柱形滾輪100與母版載體300產生相對運動使第一圖案化感光膠202層壓印於第二感光膠層400上。最後將第二波長的光線500照射於圓柱形滾輪100壓印於第二感光膠層400的位置。於又一實施例中，請繼續參考圖7，使圓柱形滾輪100與母版載體300產生相對運動的方法包含定點轉動圓柱形滾輪100並且母版載體300往圓柱形滾輪100方向移動。在不同階段使用不同波長的光進行感光膠製程，可避免圓柱形滾輪或母版載體上的圖案化感光膠層老化。Following the above, please refer to FIG. 6 and FIG. 7, where the film-to-film patterning process steps include: firstly, a second photoresist layer 400 is coated on the master carrier 300 in an appropriate manner (step S104). Next, the first patterned photoresist 202 is laminated and printed on the second photoresist layer 400 (step S105). Then, a second wavelength of light 500 is used to cure the imprinted second photoresist layer 400, so that the second photoresist layer 400 is patterned into a second patterned photoresist layer 401, wherein the first wavelength is different from the second photoresist layer. Wavelength (step S106). In one embodiment, the first wavelength is 365nm (nanometers), and the second wavelength is 405nm (nanometers). However, it is understandable that, depending on different requirements or process steps, the first wavelength can be 405nm (nanometers). Meters), and the second wavelength is 365nm (nanometers). In another embodiment, referring to FIG. 7, the step of embossing the first patterned photoresist layer 202 on the second photoresist layer 400 includes: providing a cylindrical roller 100 disposed above the master carrier 300, and The light 500 of the second wavelength is provided below the master carrier 300; the cylindrical roller 100 and the master carrier 300 are moved relative to each other, so that the first patterned photoresist 202 is laminated and printed on the second photoresist layer 400. Finally, the light 500 of the second wavelength is irradiated to the position where the cylindrical roller 100 is imprinted on the second photosensitive adhesive layer 400. In another embodiment, please continue to refer to FIG. 7, the method of making the cylindrical roller 100 and the master carrier 300 move relative to each other includes rotating the cylindrical roller 100 at a fixed point and the master carrier 300 moves toward the cylindrical roller 100. The use of different wavelengths of light for the photoresist process at different stages can prevent the aging of the patterned photoresist layer on the cylindrical roller or the master carrier.

根據上述，本發明之無縫全像圖圖案轉移方法，使用感光膠塗佈取代一般光阻塗佈，可依據需求使用或不使用電鍍製程，且感光膠形成的圖案之硬度大於光阻層。此外，於不同感光膠製程步驟中採用不同波長的光固化感光膠，可有效避免膠層老化。而最終無縫全像圖產品(end product)，可使用薄膜對薄膜(film-to-film)熱壓製程，以有效達成無接縫的目的。According to the above, the seamless holographic pattern transfer method of the present invention uses photoresist coating instead of general photoresist coating. The electroplating process can be used or not according to requirements, and the pattern formed by the photoresist is harder than the photoresist layer. In addition, the use of different wavelengths of photocurable photoresist in different photoresist manufacturing process steps can effectively prevent the adhesive layer from aging. For the final seamless holographic product (end product), a film-to-film hot pressing process can be used to effectively achieve the goal of seamless joints.

綜合上述，本發明之無縫全像圖圖案轉移方法，利用感光膠製程來執行圓柱形滾輪的轉印製程，以達良率及成本最佳化。In summary, the seamless holographic pattern transfer method of the present invention uses the photosensitive glue process to perform the transfer process of the cylindrical roller to optimize the yield and cost.

以上所述之實施例僅是為說明本發明之技術思想及特點，其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施，當不能以之限定本發明之專利範圍，即大凡依本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本發明之專利範圍內。The above-mentioned embodiments are only to illustrate the technical ideas and features of the present invention, and their purpose is to enable those who are familiar with the art to understand the content of the present invention and implement them accordingly. When they cannot be used to limit the patent scope of the present invention, That is, all equal changes or modifications made in accordance with the spirit of the present invention should still be covered by the patent scope of the present invention.

10:滾輪 11:全像版 12:接縫 20:材料 21:全像紋路圖案 22:間隙 100:圓柱形滾輪 200:第一感光膠層 201:未固化的第一感光膠層 202:第一圖案化感光膠層 203:間距距離 204:波幅高度 300:母版載體 400:第二感光膠層 401:第二圖案化光感膠層 500:光線 S100:提供一圓柱形滾輪，其上具有一第一感光膠層 S101:利用一預設圖案以一第一波長的光線對第一感光膠層進行一微影製程，以形成一第一圖案化感光膠層 S102:提供一母版載體 S103:進行一薄膜對薄膜(film-to-film)圖案化製程，以將第一圖案化感光膠層之圖案轉移至母版載體上 S104:於母版載體上塗佈一第二感光膠層 S105:將第一圖案化光感膠層壓印於第二光感膠層上 S106:使用一第二波長的光線固化被壓印的第二光感膠層，以使第二光感膠層圖案化成一第二圖案化光感膠層，其中第一波長不同於第二波長10: Roller 11: Holographic version 12: Seam 20: Material 21: Holographic pattern 22: gap 100: Cylindrical roller 200: The first photosensitive layer 201: Uncured first photosensitive adhesive layer 202: The first patterned photosensitive adhesive layer 203: spacing distance 204: volatility height 300: master carrier 400: The second photosensitive layer 401: second patterned photosensitive adhesive layer 500: light S100: Provide a cylindrical roller with a first photosensitive layer on it S101: Perform a photolithography process on the first photoresist layer with light of a first wavelength using a preset pattern to form a first patterned photoresist layer S102: Provide a master carrier S103: Perform a film-to-film patterning process to transfer the pattern of the first patterned photoresist layer to the master carrier S104: Coating a second photosensitive adhesive layer on the master carrier S105: Laminate and print the first patterned photosensitive adhesive on the second photosensitive adhesive layer S106: Use a second wavelength of light to cure the imprinted second photoresist layer, so that the second photoresist layer is patterned into a second patterned photoresist layer, wherein the first wavelength is different from the second wavelength

［圖1至圖3］顯示本發明之先前技術之一示意圖。［圖4］顯示本發明之一實施例之無縫全像圖圖案轉移方法之流程示意圖。［圖5-1至圖5-3］顯示本發明之一實施例之圖案化感光層製造方法的結構剖視示意圖。［圖6］顯示本發明一實施例之薄膜對薄膜(film-to-film)圖案化製程之流程示意圖。［圖7］顯示本發明一實施例之薄膜對薄膜(film-to-film)圖案化製程之結構示意圖。[Figure 1 to Figure 3] shows a schematic diagram of the prior art of the present invention. [Figure 4] shows a schematic flow diagram of a seamless holographic pattern transfer method according to an embodiment of the present invention. [FIG. 5-1 to FIG. 5-3] A schematic cross-sectional view showing the structure of a method for manufacturing a patterned photosensitive layer according to an embodiment of the present invention. [FIG. 6] A schematic diagram showing the flow of film-to-film patterning process according to an embodiment of the present invention. [FIG. 7] A schematic diagram showing the structure of a film-to-film patterning process according to an embodiment of the present invention.

S100:提供一圓柱形滾輪，其上具有一第一感光膠層S100: Provide a cylindrical roller with a first photosensitive layer on it

S101:利用一預設圖案以一第一波長的光線對第一感光膠層進行一微影製程，以形成一第一圖案化感光膠層S101: Perform a photolithography process on the first photoresist layer with light of a first wavelength using a preset pattern to form a first patterned photoresist layer

S102:提供一母版載體S102: Provide a master carrier

S103:進行一薄膜對薄膜(film-to-film)圖案化製程，以將第一圖案化感光膠層之圖案轉移至母版載體上S103: Perform a film-to-film patterning process to transfer the pattern of the first patterned photoresist layer to the master carrier

Claims

一種無縫全像圖圖案轉移方法，其步驟包含：提供一圓柱形滾輪，該圓柱形滾輪上具有一第一感光膠層；利用一預設圖案以一第一波長的光線對該第一感光膠層進行一微影製程，以形成一第一圖案化感光膠層；提供一母版載體；以及進行一薄膜對薄膜圖案化製程，以將該第一圖案化感光膠層之圖案轉移至該母版載體上，其步驟包含：於該母版載體上塗佈一第二感光膠層；使該第一圖案化感光膠層壓印於該第二感光膠層上；以及使用一第二波長的光線固化被壓印的該第二感光膠層，使該第二感光膠層圖案化成一第二圖案化感光膠層，其中該第一波長不同於該第二波長。A seamless holographic pattern transfer method, the steps include: Provide a cylindrical roller with a first photosensitive adhesive layer on the cylindrical roller; Performing a photolithography process on the first photoresist layer with light of a first wavelength using a preset pattern to form a first patterned photoresist layer; Provide a master carrier; and A film-to-film patterning process is performed to transfer the pattern of the first patterned photoresist layer to the master carrier, and the steps include: Coating a second photosensitive adhesive layer on the master carrier; Lamination and printing the first patterned photoresist on the second photoresist layer; and Using a second wavelength of light to cure the imprinted second photoresist layer to pattern the second photoresist layer into a second patterned photoresist layer, wherein the first wavelength is different from the second wavelength.

如請求項1所述之無縫全像圖圖案轉移方法，其中該圓柱形滾輪為金屬材質所製成。The seamless holographic pattern transfer method according to claim 1, wherein the cylindrical roller is made of metal material.

如請求項1所述之無縫全像圖圖案轉移方法，其中該第一圖案化感光膠層為具有一連續正弦波圖案的感光膠層。The seamless holographic pattern transfer method according to claim 1, wherein the first patterned photoresist layer is a photoresist layer with a continuous sine wave pattern.

如請求項3所述之無縫全像圖圖案轉移方法，其中該連續正弦波圖案之兩正弦波之間距距離介於0.4um(微米)至2.0um(微米)之間。The seamless holographic pattern transfer method according to claim 3, wherein the distance between the two sine waves of the continuous sine wave pattern is between 0.4um (micrometer) and 2.0um (micrometer).

如請求項3所述之無縫全像圖圖案轉移方法，其中該連續正弦波圖案之任一正弦波的波幅高度介於0.2um(微米)至1.5um(微米)之間。The seamless holographic pattern transfer method according to claim 3, wherein the amplitude of any sine wave of the continuous sine wave pattern is between 0.2um (micrometer) and 1.5um (micrometer).

如請求項1所述之無縫全像圖圖案轉移方法，其中該第一波長為365nm(奈米)且該第二波長為405nm(奈米)。The seamless holographic pattern transfer method according to claim 1, wherein the first wavelength is 365 nm (nanometers) and the second wavelength is 405 nm (nanometers).

如請求項1所述之無縫全像圖圖案轉移方法，其中該第一波長為405nm(奈米)且該第二波長為365nm(奈米)。The seamless holographic pattern transfer method according to claim 1, wherein the first wavelength is 405 nm (nanometers) and the second wavelength is 365 nm (nanometers).

如請求項1所述之無縫全像圖圖案轉移方法，其中使該第一圖案化感光膠層壓印於該第二感光膠層上的步驟包含：提供該圓柱形滾輪設置於該母版載體上方，且提供該第二波長的光線於該母版載體下方；使該圓柱形滾輪與該母版載體產生相對運動使該第一圖案化感光膠層壓印於該第二感光膠層上；以及將該第二波長的光線照射於該圓柱形滾輪壓印於該第二感光膠層的位置。The seamless holographic pattern transfer method of claim 1, wherein the step of laminating and printing the first patterned photoresist on the second photoresist layer comprises: Providing the cylindrical roller set above the master carrier, and providing the light of the second wavelength below the master carrier; Causing the cylindrical roller and the master carrier to move relative to each other so that the first patterned photoresist is laminated and printed on the second photoresist layer; and The second wavelength light is irradiated to the position where the cylindrical roller is imprinted on the second photosensitive adhesive layer.

如請求項8所述之無縫全像圖圖案轉移方法，其中使該圓柱形滾輪與該母版載體產生相對運動的方法包含定點轉動該圓柱形滾輪並且該母版載體往該圓柱形滾輪方向移動。The seamless holographic pattern transfer method according to claim 8, wherein the method of making the cylindrical roller and the master carrier move relative to each other includes rotating the cylindrical roller at a fixed point and the master carrier moves toward the cylindrical roller move.

如請求項1所述之無縫全像圖圖案轉移方法，其中該母版載體為聚乙烯對苯二甲酸酯(PET)材質所製成。The seamless holographic pattern transfer method according to claim 1, wherein the master carrier is made of polyethylene terephthalate (PET) material.