TW202142338A - Solder, substrate assembly and assembly method thereof - Google Patents

Solder, substrate assembly and assembly method thereof Download PDF

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Publication number
TW202142338A
TW202142338A TW109138646A TW109138646A TW202142338A TW 202142338 A TW202142338 A TW 202142338A TW 109138646 A TW109138646 A TW 109138646A TW 109138646 A TW109138646 A TW 109138646A TW 202142338 A TW202142338 A TW 202142338A
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Taiwan
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solder
alloy
substrate
alloy powder
degrees celsius
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TW109138646A
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Chinese (zh)
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莊鑫毅
吳俊毅
顏怡文
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德商羅伯特 博世有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/06—Metallic powder characterised by the shape of the particles
    • B22F1/065—Spherical particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0483—Alloys based on the low melting point metals Zn, Pb, Sn, Cd, In or Ga
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C12/00—Alloys based on antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009—Pre-treatment of the bump connector or the bonding area
    • H01L2224/81024—Applying flux to the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/8121—Applying energy for connecting using a reflow oven
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0212—Resin particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0215—Metallic fillers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0221—Insulating particles having an electrically conductive coating

Abstract

The invention provides solder. The solder comprises first alloy powder with a weight percentage of 90%-99.99% and second alloy powder with a weight percentage of 0.01%-10%, wherein the first alloy powder comprises first alloy with a solidus temperature of 170-250 DEG C, and the first alloy comprises tin or tin alloy; and the second alloy powder comprises second alloy with a solidus temperature above 250 DEG C, and the second alloy comprises bismuth or bismuth alloy. The invention further provides a substrate assembly. The substrate assembly comprises a substrate, and an electronic component which is coupled to the substrate through a solder joint formed by the solder, wherein the solder joint comprises a plurality of spacers which are distributed between the substrate and the electronic component and formed by the second alloy. The substrate assembly has good welding stability and reliability.

Description

焊料、基板組件及其裝配方法Solder, substrate assembly and assembly method thereof

本發明涉及電子和半導體技術領域。尤其涉及用於連接基板和電子部件的焊料、由該焊料形成的基板組件以及基板組件的裝配方法。The invention relates to the field of electronics and semiconductor technology. In particular, it relates to a solder for connecting a substrate and an electronic component, a substrate assembly formed of the solder, and a method of assembling the substrate assembly.

在電子部件和基板之間的焊料中加入間隔元件（Spacer）是在焊接工藝期間保持電子部件和基板之間距離的有效措施，間隔元件可以阻止焊接時焊料可能產生的崩塌，從而阻止了電子部件沉向基板並保持電子部件和基板之間的距離。電子部件和基板之間距離的減少會導致焊料疲勞壽命的衰減以及在電子部件下方的環氧樹脂流動，這在實現環氧樹脂包封的時候可能引起可靠性問題。Adding a spacer element (Spacer) to the solder between the electronic component and the substrate is an effective measure to maintain the distance between the electronic component and the substrate during the soldering process. The spacer element can prevent the possible collapse of the solder during soldering, thereby preventing the electronic component Sink toward the substrate and maintain the distance between the electronic component and the substrate. The reduction of the distance between the electronic component and the substrate will lead to the attenuation of solder fatigue life and the flow of epoxy resin under the electronic component, which may cause reliability problems when epoxy encapsulation is achieved.

與此同時，在焊接工藝期間，間隔元件和焊料之間可能會形成介面金屬共化物（Intermetallic Compound, IMC），由累積的介面金屬共化物產生的應力集中則會降低焊接的強度。此外，間隔元件和焊料之間形成的介面金屬共化物與間隔元件和基板之間形成的介面金屬共化物分別各自累積從而可能影響彼此，從而降低焊接質量。At the same time, during the soldering process, intermetallic compounds (Intermetallic Compound, IMC) may be formed between the spacer element and the solder, and the stress concentration generated by the accumulated intermetallic compounds will reduce the strength of the soldering. In addition, the interfacial metallurgical compound formed between the spacer element and the solder and the interfacial metallurgical compound formed between the spacer element and the substrate respectively accumulate and may affect each other, thereby reducing the quality of soldering.

本發明的目的在於克服上述不足之處，本發明的技術方案解決了現有技術中加入間隔元件的焊料的焊接質量低下的問題。The purpose of the present invention is to overcome the above-mentioned shortcomings. The technical solution of the present invention solves the problem of low soldering quality of the solder added with spacer elements in the prior art.

在本發明一些實施方式中，提供了一種焊料，其包括：按重量計90％至99.99％之間的量的第一合金粉末，其包括固相線溫度在170攝氏度和250攝氏度之間的第一合金，所述第一合金包括錫或錫合金；按重量計0.01％至10％之間的量的第二合金粉末，其包括固相線溫度高於250攝氏度的第二合金，所述第二合金包括鉍或者鉍合金。In some embodiments of the present invention, a solder is provided, which includes: a first alloy powder in an amount between 90% and 99.99% by weight, which includes a first alloy powder having a solidus temperature between 170 degrees Celsius and 250 degrees Celsius An alloy, the first alloy includes tin or tin alloy; the second alloy powder in an amount between 0.01% and 10% by weight, which includes a second alloy whose solidus temperature is higher than 250 degrees Celsius, the first alloy The two alloys include bismuth or bismuth alloys.

進一步地，所述第二合金包括銀鉍合金，所述銀鉍合金中包括按重量計不超過20％的量的銀。Further, the second alloy includes a silver-bismuth alloy, and the silver-bismuth alloy includes silver in an amount not exceeding 20% by weight.

進一步地，所述第二合金粉末的粒徑大於等於10微米並且小於等於200 微米。Further, the particle size of the second alloy powder is greater than or equal to 10 microns and less than or equal to 200 microns.

進一步地，所述第二合金粉末為球形。Further, the second alloy powder is spherical.

進一步地，其包括按照重量計88％至92％的第一合金粉末和第二合金粉末的混合物，以及按重量計8％至12％的助焊劑。Further, it includes a mixture of 88% to 92% by weight of the first alloy powder and the second alloy powder, and 8% to 12% by weight of flux.

根據本發明的一些實施方式，還提供了一種基板組件，包括：基板；以及經由前述中任意一項所述的焊料形成的焊接部而耦合到所述基板的電子部件，所述焊接部包括分佈在所述基板和所述電子部件之間的由所述第二合金構成的若干個間隔元件。According to some embodiments of the present invention, there is also provided a substrate assembly, including: a substrate; and an electronic component coupled to the substrate via a soldering portion formed by the solder described in any one of the foregoing, the soldering portion including a distribution A number of spacer elements composed of the second alloy between the substrate and the electronic component.

進一步地，所述間隔元件呈球形，所述間隔元件的直徑大於等於10微米並且小於等於200微米。Further, the spacer element is spherical, and the diameter of the spacer element is greater than or equal to 10 micrometers and less than or equal to 200 micrometers.

進一步地，所述間隔元件的熔點高於所述焊料的熔點。Further, the melting point of the spacer element is higher than the melting point of the solder.

進一步地，所述間隔元件的熔點高於250攝氏度。Further, the melting point of the spacer element is higher than 250 degrees Celsius.

根據本發明的一些實施方式，還提供了一種將電子部件裝配到基板的方法，包括：將模板設置於在所述基板的表面上，所述基板的表面包括至少一個焊盤，所述模板具有在所述基板的焊盤上方的開口；將前述中任意一項所述的焊料添加在所述開口內；移除所述模板；將所述電子部件的接觸部定位在所述焊料上；以及，加熱到240攝氏度至250攝氏度使焊料回流以耦合所述接觸部和所述焊盤，其中，所述第二合金在焊料回流期間保持固態並且維持所述電子部件與所述基板之間的距離。According to some embodiments of the present invention, there is also provided a method for assembling electronic components to a substrate, including: arranging a template on the surface of the substrate, the surface of the substrate includes at least one pad, and the template has An opening above the pad of the substrate; adding the solder described in any one of the foregoing into the opening; removing the template; positioning the contact portion of the electronic component on the solder; and , Heating to 240 degrees Celsius to 250 degrees Celsius to reflow the solder to couple the contact and the pad, wherein the second alloy remains solid during the solder reflow and maintains the distance between the electronic component and the substrate .

進一步地，所述距離在10至200微米之間。Further, the distance is between 10 and 200 microns.

由以上可以看出，本發明的技術方案所提供的間隔元件在焊接工藝期間依然能保持固態，並且不會與焊料和/或基板之間反應形成介面金屬共化物。由此使得電子部件和基板之間實現穩固的焊接，提高了焊接質量。It can be seen from the above that the spacer element provided by the technical solution of the present invention can still maintain a solid state during the soldering process, and will not react with the solder and/or the substrate to form an interface metal alloy. As a result, stable soldering is realized between the electronic component and the substrate, and the soldering quality is improved.

下面，結合附圖詳細描述本發明的一些具體實施方式。Hereinafter, some specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.

本文公開了與用於在焊接工藝期間維持基板和組件之間距離的間隔元件相關的焊料和裝置。在具體實施方式中，基板組件包括基板和組件，組件可以經由焊接部（Solder Joint）被耦合到基板。其中，焊接部可以包括間隔元件，間隔元件用於在焊接工藝期間保持基板與組件之間的距離。Disclosed herein are solders and devices related to spacer elements used to maintain the distance between the substrate and the component during the soldering process. In a specific embodiment, the substrate assembly includes a substrate and a component, and the component may be coupled to the substrate via a solder joint. Wherein, the soldering part may include a spacer element, and the spacer element is used to maintain the distance between the substrate and the component during the soldering process.

請參考圖1，圖中示出了根據本發明一個實施方式的基板組件100，基板組件100包括基板102，基板102可以包括對本領域普通技術人員來說已知的任何可以為組件提供安裝平臺的部件。例如部件可以包括引線或引腳、芯片安裝板、引線框、襯底、功率電子襯底、印刷電路板、載體或芯片載體、半導體封裝等中的至少一種。具體地，基板102包括介電材料與位於介電材料內的一個或多個導電元件，所述導電元件被用於通過基板102傳導電信號。基板102包括位於基板102的表面106 上的一個或多個焊盤104，焊盤104可以被耦合到基板102內的導電元件中的一個或多個，並且可以允許電信號在焊盤104與焊盤104所耦合到的導電元件之間傳遞。Please refer to FIG. 1, which shows a substrate assembly 100 according to an embodiment of the present invention. The substrate assembly 100 includes a substrate 102. The substrate 102 may include any component known to those skilled in the art that can provide a mounting platform for the component. part. For example, the component may include at least one of a lead or pin, a chip mounting board, a lead frame, a substrate, a power electronic substrate, a printed circuit board, a carrier or a chip carrier, a semiconductor package, and the like. Specifically, the substrate 102 includes a dielectric material and one or more conductive elements located in the dielectric material, and the conductive elements are used to conduct electrical signals through the substrate 102. The substrate 102 includes one or more pads 104 on the surface 106 of the substrate 102. The pads 104 may be coupled to one or more of the conductive elements in the substrate 102, and may allow electrical signals to be connected to the pads 104 and solder. The disk 104 is coupled to the conductive elements.

基板組件100還包括位於與表面106相鄰處的電子部件108，電子部件108 可以包括任何電子元器件，電子元器件包括無源電子部件、有源電子部件、半導體管芯、半導體封裝結構、傳感器等中的至少一種。例如，無源電子部件可以包括電阻器、電容器、電感器等中的至少一種；有源電子部件可以包括二極管、晶體管、集成電路、光電子器件等中的至少一種；半導體管芯包括集成電路、無源電子部件、有源電子部件、微機電結構等。集成電路例如為邏輯集成電路、模擬集成電路、混合信號集成電路、功率集成電路等。電子部件108還包括一個或多個焊盤110。焊盤110可以位於電子部件 108的表面112處或延伸到電子部件108 的表面112，其中，表面112設置為面向基板102。焊盤110可以被耦合到電子部件108內的一個或多個元件（諸如管芯），並且可以允許電信號在焊盤110 與元件之間傳遞。The substrate assembly 100 also includes an electronic component 108 located adjacent to the surface 106. The electronic component 108 can include any electronic component. The electronic component includes passive electronic components, active electronic components, semiconductor dies, semiconductor packaging structures, and sensors. At least one of the others. For example, passive electronic components may include at least one of resistors, capacitors, inductors, etc.; active electronic components may include at least one of diodes, transistors, integrated circuits, optoelectronic devices, etc.; semiconductor dies include integrated circuits, Source electronic components, active electronic components, micro-electromechanical structures, etc. The integrated circuits are, for example, logic integrated circuits, analog integrated circuits, mixed-signal integrated circuits, power integrated circuits, and the like. The electronic component 108 also includes one or more pads 110. The pad 110 may be located at the surface 112 of the electronic component 108 or extend to the surface 112 of the electronic component 108, wherein the surface 112 is arranged to face the substrate 102. The pad 110 may be coupled to one or more elements (such as a die) within the electronic component 108 and may allow electrical signals to pass between the pad 110 and the element.

基板組件100還包括一個或多個焊接部114，焊接部114將基板102的焊盤104耦合到組件108的焊盤110。焊接部114由焊料116形成。焊料116可以是包括基於鉛的焊料、無鉛焊料、銀合金焊料其中之一或者各種組合。在一些實施方式中，焊料116可以包括錫、銀、銅、鉛、氫、氧、氮、或者各種組合。本實施方式中，焊料116包括第一合金粉末和第二合金粉末，其中，第一合金粉末包括固相線溫度在200攝氏度到250攝氏度之間的第一合金，第二合金粉末包括固相線溫度高於250攝氏度的第二合金。具體地，第一合金包括錫或者錫合金，第二合金包括鉍或者鉍合金。The substrate assembly 100 also includes one or more soldering portions 114 that couple the pads 104 of the substrate 102 to the pads 110 of the assembly 108. The soldering part 114 is formed of solder 116. The solder 116 may include one or various combinations of lead-based solder, lead-free solder, and silver alloy solder. In some embodiments, the solder 116 may include tin, silver, copper, lead, hydrogen, oxygen, nitrogen, or various combinations. In this embodiment, the solder 116 includes a first alloy powder and a second alloy powder, wherein the first alloy powder includes the first alloy whose solidus temperature is between 200 degrees Celsius and 250 degrees Celsius, and the second alloy powder includes the solidus powder. A second alloy with a temperature higher than 250 degrees Celsius. Specifically, the first alloy includes tin or tin alloy, and the second alloy includes bismuth or bismuth alloy.

焊接部114還包括一個或多個間隔元件118。間隔元件118可以由第二合金粉末構成。間隔元件118可以是包括一個或多個具有任意的形式或形狀的元件，間隔元件118的粒徑可以在約10微米至約200微米的範圍內。例如，間隔元件118可以至少部分地具有圓形式，即球形、橢圓形、水滴形等。在本實施方式中，間隔元件118是呈球形，間隔元件118的直徑可以在約10微米至約200微米的範圍內。此外，嵌入焊料116中的間隔元件118可以全部具有基本相似的尺寸。例如，嵌入焊料116中的所有的球形間隔元件118可以具有處於上述範圍之一中的相似直徑。The welding part 114 also includes one or more spacer elements 118. The spacing element 118 may be composed of a second alloy powder. The spacing element 118 may include one or more elements having any form or shape, and the particle size of the spacing element 118 may be in the range of about 10 micrometers to about 200 micrometers. For example, the spacer 118 may at least partially have a circular shape, that is, a spherical shape, an oval shape, a drop shape, and the like. In this embodiment, the spacer element 118 is spherical, and the diameter of the spacer element 118 may be in the range of about 10 micrometers to about 200 micrometers. In addition, the spacer elements 118 embedded in the solder 116 may all have substantially similar dimensions. For example, all of the spherical spacer elements 118 embedded in the solder 116 may have similar diameters in one of the aforementioned ranges.

間隔元件118被散佈地嵌入在焊料116內。間隔元件118可以包括具有比第一合金粉末更高熔點的材料。例如，第一合金粉末可以包括具有在170攝氏度與250攝氏度之間的熔點的材料，而間隔元件118可以包括具有比250 攝氏度更高的熔點的材料。比如，第一合金粉末為具有183攝氏度的熔點的錫鉛合金、或者為具有240至250攝氏度的熔點的錫銻合金。而間隔元件118包括具有比250攝氏度更高的熔點的材料。此外，間隔元件118可以由具有比第一合金粉末的熔點更高熔點的金屬、聚合物中的至少一種製成。本實施方式中，包括金屬或由金屬製成的間隔元件118包括例如銅、銀、鎳、鋁、鉍及其合金中的至少一種或其各種組合。具體地，間隔元件118由鉍或者鉍合金形成，例如間隔元件 118為熔點在262攝氏度的銀鉍合金。包括金屬或由金屬製成的間隔元件118可以增加焊料的導熱性和/或導電性，例如，通過嵌入由銅及其合金製成的間隔元件118 可以增加焊料116的傳導性；通過嵌入由鉍及其合金製成的間隔元件118可以增加焊料116的焊接穩定性。與包括金屬或由金屬製成的間隔元件相比，包括聚合物或由聚合物製成的間隔元件118可以提供良好的可壓縮性。此外，在一些實施方式中，包括聚合物或由聚合物製成的間隔元件還可以具有可以增加間隔元件的傳導性的金屬塗層。諸如錫塗層。The spacer elements 118 are interspersedly embedded in the solder 116. The spacer 118 may include a material having a higher melting point than the first alloy powder. For example, the first alloy powder may include a material having a melting point between 170 degrees Celsius and 250 degrees Celsius, and the spacer 118 may include a material having a higher melting point than 250 degrees Celsius. For example, the first alloy powder is a tin-lead alloy having a melting point of 183 degrees Celsius, or a tin-antimony alloy having a melting point of 240 to 250 degrees Celsius. The spacing element 118 includes a material having a melting point higher than 250 degrees Celsius. In addition, the spacer 118 may be made of at least one of a metal and a polymer having a higher melting point than that of the first alloy powder. In this embodiment, the spacer 118 including metal or made of metal includes, for example, at least one of copper, silver, nickel, aluminum, bismuth, and alloys thereof, or various combinations thereof. Specifically, the spacer element 118 is formed of bismuth or a bismuth alloy. For example, the spacer element 118 is a silver-bismuth alloy with a melting point of 262 degrees Celsius. The spacer element 118 including metal or made of metal can increase the thermal conductivity and/or electrical conductivity of the solder. For example, by embedding the spacer element 118 made of copper and its alloy, the conductivity of the solder 116 can be increased; The spacer element 118 made of the alloy and the spacer element 118 can increase the soldering stability of the solder 116. Compared with the spacer element 118 including or made of metal, the spacer element 118 including or made of polymer can provide good compressibility. In addition, in some embodiments, the spacer element including or made of polymer may also have a metal coating that can increase the conductivity of the spacer element. Such as tin coating.

間隔元件118用於在焊接工藝期間保持電子部件108與基板102之間所期望的最小距離。因此，間隔元件118具有與所期望的最小距離相等的粒徑，例如：直徑、長度、寬度和/或高度。本實施方式中，間隔元件118是球形，間隔元件118因此可以具有與所期望的最小距離相等的直徑。在本實施方式中，間隔元件118的直徑可以在約10微米至約200微米的範圍內，更具體地在約10微米至約150微米的範圍內，更具體地在約10微米至約100微米的範圍內，更具體地在約10微米至約60微米的範圍內，更具體地在約10微米至約40微米的範圍內，更具體地在約10微米至約30微米的範圍內。The spacer element 118 is used to maintain a desired minimum distance between the electronic component 108 and the substrate 102 during the soldering process. Therefore, the spacing element 118 has a particle size equal to the desired minimum distance, such as diameter, length, width, and/or height. In this embodiment, the spacer element 118 is spherical, and therefore the spacer element 118 can have a diameter equal to the desired minimum distance. In this embodiment, the diameter of the spacer element 118 may be in the range of about 10 micrometers to about 200 micrometers, more specifically in the range of about 10 micrometers to about 150 micrometers, and more specifically in the range of about 10 micrometers to about 100 micrometers. In the range of about 10 microns to about 60 microns, more specifically in the range of about 10 microns to about 40 microns, more specifically in the range of about 10 microns to about 30 microns.

間隔元件118維持電子部件108與基板102之間的所期望的最小距離可以提供更好的焊料116疲勞壽命以及在電子部件108下方的更好的環氧樹脂流動性。此外，維持所期望的最小距離的間隔元件118還能夠在電子部件108和基板102之間提供足夠的間隔，以清除在焊接工藝期間在電子部件108與基板102之間可能形成的任何焊料的橋接（Solderbridges）或焊料球（Solder balls）。The spacer element 118 maintaining the desired minimum distance between the electronic component 108 and the substrate 102 can provide better fatigue life of the solder 116 and better epoxy fluidity under the electronic component 108. In addition, the spacer element 118 that maintains the desired minimum distance can also provide sufficient spacing between the electronic component 108 and the substrate 102 to remove any solder bridging that may be formed between the electronic component 108 and the substrate 102 during the soldering process. (Solderbridges) or solder balls.

參考圖2，圖2示出了用於形成基板組件100的方法200，本實施方式中，基板102是由包括銅的材料製成的印刷電路板。方法200包括步驟202至208，具體地，在放置模板步驟202，模板（Stencil）首先被定位在基板102的表面106上。模板可以具有一個或多個開口，所述開口用於在模板被定位在基板102的表面106上的時候使得基板102的一部分被暴露。模板可以被佈置成所述開口位於與基板102的焊盤104相鄰處。然後繼續進行到施加焊料步驟204。Referring to FIG. 2, FIG. 2 shows a method 200 for forming a substrate assembly 100. In this embodiment, the substrate 102 is a printed circuit board made of a material including copper. The method 200 includes steps 202 to 208. Specifically, in the step 202 of placing a template, the template (Stencil) is first positioned on the surface 106 of the substrate 102. The template may have one or more openings for exposing a portion of the substrate 102 when the template is positioned on the surface 106 of the substrate 102. The template may be arranged such that the opening is located adjacent to the pad 104 of the substrate 102. Then proceed to the step 204 of applying solder.

在施加焊料步驟204，焊料116被施加到基板102的表面106。具體地，可以在放置模板步驟202的模板仍定位在基板102的表面106上時將焊料116施加到基板102的表面106，其中，焊料116被施加到被模板的開口所暴露的表面106的部分，被模板的開口暴露的表面106可以包括基板102的焊盤104，這可以使得焊料116被施加到基板102的焊盤104上。焊料116當被施加到表面106的時候可以填充或部分地填充模板的開口。In the solder application step 204, the solder 116 is applied to the surface 106 of the substrate 102. Specifically, the solder 116 may be applied to the surface 106 of the substrate 102 while the template of the placing template step 202 is still positioned on the surface 106 of the substrate 102, wherein the solder 116 is applied to the portion of the surface 106 exposed by the opening of the template The surface 106 exposed by the opening of the template may include the pad 104 of the substrate 102, which may cause the solder 116 to be applied to the pad 104 of the substrate 102. The solder 116 when applied to the surface 106 may fill or partially fill the opening of the template.

焊料116可以包括一個或多個間隔元件118。包含一個或多個間隔元件118的焊料116可以在焊料116被施加到基板102的表面106之前已經被組合。具體地，焊料116包括第一合金粉末和第二合金粉末，間隔元件118由第二合金粉末構成。第一合金粉末可以是包括基於鉛的焊料、無鉛焊料、銀合金焊料其中之一或者各種組合。具體地，第一合金粉末可以包括錫、銀、銅、鉛、氫、氧、氮、或者各種組合。本實施方式中，第一合金粉末包括固相線溫度在200攝氏度到250攝氏度之間的第一合金，第二合金粉末包括固相線溫度高於250攝氏度的第二合金。更具體地，第一合金粉末包括錫或者錫合金，第二合金粉末包括鉍或者鉍合金。更具體地，焊料116包括按重量計90%至99.99%之間的量的第一合金粉末，以及按重量計0.01%至10%之間的量的第二合金粉末。更具體地，第一合金為Sn-Ag-Cu(SAC305)無鉛焊料合金，第二合金包括銀鉍合金，銀鉍合金包括按重量計不超過20%的量的銀。焊料116還可以包括一定重量的助焊劑，例如按重量計8％至12％的助焊劑，其餘為第一合金粉末和第二合金粉末的混合物。在一些實施方式中，焊料116包括按重量計9％的助焊劑，在一些實施方式中，焊料116包括按重量計10％的助焊劑，以及在一些實施方式中，焊料116包括按重量計10％的助焊劑。焊料116為膏狀焊料，焊料116被施加到基板102的表面106時可以維持間隔元件118的定位。在已經將焊料 116施加到基板102的表面106之後，可以移除模板。然後繼續進行到放置電子部件步驟206。The solder 116 may include one or more spacer elements 118. The solder 116 containing one or more spacer elements 118 may have been combined before the solder 116 is applied to the surface 106 of the substrate 102. Specifically, the solder 116 includes a first alloy powder and a second alloy powder, and the spacer 118 is composed of the second alloy powder. The first alloy powder may include one or various combinations of lead-based solder, lead-free solder, and silver alloy solder. Specifically, the first alloy powder may include tin, silver, copper, lead, hydrogen, oxygen, nitrogen, or various combinations. In this embodiment, the first alloy powder includes a first alloy with a solidus temperature between 200 degrees Celsius and 250 degrees Celsius, and the second alloy powder includes a second alloy with a solidus temperature higher than 250 degrees Celsius. More specifically, the first alloy powder includes tin or tin alloy, and the second alloy powder includes bismuth or bismuth alloy. More specifically, the solder 116 includes the first alloy powder in an amount between 90% and 99.99% by weight, and the second alloy powder in an amount between 0.01% and 10% by weight. More specifically, the first alloy is a Sn-Ag-Cu (SAC305) lead-free solder alloy, the second alloy includes a silver-bismuth alloy, and the silver-bismuth alloy includes silver in an amount not exceeding 20% by weight. The solder 116 may also include a certain weight of flux, such as 8% to 12% by weight of flux, and the rest is a mixture of the first alloy powder and the second alloy powder. In some embodiments, the solder 116 includes 9% by weight of flux, in some embodiments, the solder 116 includes 10% by weight of flux, and in some embodiments, the solder 116 includes 10% by weight. % Flux. The solder 116 is a cream solder, and when the solder 116 is applied to the surface 106 of the substrate 102, the positioning of the spacer element 118 can be maintained. After the solder 116 has been applied to the surface 106 of the substrate 102, the template can be removed. Then proceed to step 206 of placing electronic components.

在放置電子部件步驟206，電子部件108可以被定位在基板102上。特別地，電子部件108可以利用焊盤110而被定位在基板102的表面106上，焊盤110可以位於焊料116上。例如，焊盤110可以位於在施加焊料步驟204中所施加的焊料116上，然後繼續進行到執行焊接回流步驟208。In the placing electronic component step 206, the electronic component 108 may be positioned on the substrate 102. In particular, the electronic component 108 may be positioned on the surface 106 of the substrate 102 using the pad 110, and the pad 110 may be located on the solder 116. For example, the pad 110 may be located on the solder 116 applied in the solder applying step 204, and then proceed to perform the solder reflow step 208.

在執行焊接回流步驟208，可以對在放置電子部件步驟206中形成的基板102和電子部件108執行焊接回流工藝（Reflow），焊接回流工藝可以包括將基板102和電子部件108加熱到240攝氏度至255攝氏度之間的一溫度，例如，基板102和電子部件108被加熱到243攝氏度、245攝氏度、248攝氏度或250攝氏度。該溫度在焊料116的第一合金粉末的熔點之上，但是在間隔元件118的熔點之下。例如，當間隔元件118 包括銀鉍合金時，參考圖3，銀鉍合金的二元相圖顯示了銀鉍的固相線和液相線，其中銀鉍合金具有262攝氏度的熔點，高於包括SAC305的焊料116的熔點（217攝氏度）。在執行加熱之後焊料116可以被冷卻，從而使得焊料116凝固（Solidify）形成焊接部114。In performing the solder reflow step 208, a solder reflow process (Reflow) may be performed on the substrate 102 and the electronic component 108 formed in the electronic component placement step 206. The solder reflow process may include heating the substrate 102 and the electronic component 108 to 240 degrees Celsius to 255. A temperature between degrees Celsius, for example, the substrate 102 and the electronic component 108 are heated to 243 degrees Celsius, 245 degrees Celsius, 248 degrees Celsius, or 250 degrees Celsius. This temperature is above the melting point of the first alloy powder of the solder 116, but below the melting point of the spacer element 118. For example, when the spacer element 118 includes a silver-bismuth alloy, referring to FIG. 3, the binary phase diagram of the silver-bismuth alloy shows the solidus and liquidus of silver-bismuth, where the silver-bismuth alloy has a melting point of 262 degrees Celsius, which is higher than the The melting point of the solder 116 of SAC305 (217 degrees Celsius). After the heating is performed, the solder 116 may be cooled, so that the solder 116 is solidified to form the solder portion 114.

在焊接回流工藝期間，由第二合金構成的間隔元件118保持固態。焊接部114包括第一合金粉末和間隔元件118。具體地，當焊料116的第一合金粉末熔化時，由於重力使得間隔元件118可以向下朝向焊盤104移動，從而導致間隔元件118沿著焊盤104 被佈置開。在焊接回流工藝期間，間隔元件118一直保持固態，所以間隔器元件118可維持電子部件108與基板102之間所期望的最小距離。同時，焊料116的第一合金粉末在焊接回流工藝期間可流動以接觸電子部件108的焊盤110與基板102的焊盤104，並且當焊接回流工藝結束時，第一合金粉末凝固從而可以耦合焊盤110和焊盤104。參考圖4，錫鉍合金的二元相圖顯示了當焊接回流工藝結束時，包含錫或錫合金的焊料116的第一合金粉末和間隔元件118在錫鉍界面處沒有形成介面金屬共化物，因此不會在錫鉍的界面處產生應力集中的情況。再參考圖5，銅鉍合金的二元相圖顯示了包含銅的基板102和間隔元件118 在銅鉍界面之間也沒有形成介面金屬共化物，也不會在銅鉍的界面處產生應力集中，從而提高了焊接的可靠性。During the solder reflow process, the spacer element 118 composed of the second alloy remains solid. The welding part 114 includes a first alloy powder and a spacer 118. Specifically, when the first alloy powder of the solder 116 is melted, the spacer element 118 can move downward toward the pad 104 due to gravity, thereby causing the spacer element 118 to be arranged along the pad 104. During the solder reflow process, the spacer element 118 remains solid, so the spacer element 118 can maintain the desired minimum distance between the electronic component 108 and the substrate 102. At the same time, the first alloy powder of the solder 116 can flow during the solder reflow process to contact the pad 110 of the electronic component 108 and the pad 104 of the substrate 102, and when the solder reflow process ends, the first alloy powder solidifies so that the solder can be coupled. The pad 110 and the pad 104. Referring to FIG. 4, the binary phase diagram of the tin-bismuth alloy shows that when the solder reflow process ends, the first alloy powder of the solder 116 containing tin or tin alloy and the spacer element 118 do not form an interfacial metallization at the tin-bismuth interface. Therefore, there will be no stress concentration at the interface of tin and bismuth. Referring again to Figure 5, the binary phase diagram of the copper-bismuth alloy shows that the copper-containing substrate 102 and the spacer element 118 do not form an interfacial metallurgical compound between the copper-bismuth interface, and no stress concentration occurs at the copper-bismuth interface. , Thereby improving the reliability of welding.

以上方法200僅僅是形成基板組件100的示例性描述，本領域技術人員應當知曉，還可以通過以上所述不同步驟的組合來實現形成基板組件100，例如可以先在基板102的表面106上施加焊料116的第一合金粉末，隨後將一個或者多個由第二合金粉末構成的間隔元件118施加在第一合金粉末的頂部。可選地，間隔元件118被施加在焊料116的第一合金粉末頂部之前，可以通過回流（熱處理）對焊料116的第一合金粉末進行預處理，焊料116的第一合金粉末還可以被電鍍/無電鍍或者氣相沉積，從而維持焊料116的定位。The above method 200 is only an exemplary description of forming the substrate assembly 100. Those skilled in the art should know that the substrate assembly 100 can also be formed by a combination of the different steps described above. For example, solder can be applied on the surface 106 of the substrate 102 first. 116 of the first alloy powder, and then one or more spacer elements 118 composed of the second alloy powder are applied on top of the first alloy powder. Optionally, before the spacer element 118 is applied to the top of the first alloy powder of the solder 116, the first alloy powder of the solder 116 may be pretreated by reflow (heat treatment), and the first alloy powder of the solder 116 may also be electroplated/ Electroless plating or vapor deposition, so as to maintain the positioning of the solder 116.

由此可見，與現有技術相比，本發明的實施方式提供的間隔元件在焊接工藝期間依然能保持固態，並且不會與焊料和/或基板之間反應形成介面金屬共化物。由此使得電子部件和基板之間實現穩固的焊接。It can be seen that, compared with the prior art, the spacer element provided by the embodiment of the present invention can still maintain a solid state during the soldering process, and will not react with the solder and/or the substrate to form an interfacial metallurgical compound. This enables stable soldering between the electronic component and the substrate.

本發明的特徵、特點、優點和益處通過以下結合附圖的詳細描述將變得顯而易見。The features, characteristics, advantages and benefits of the present invention will become apparent from the following detailed description in conjunction with the accompanying drawings.

[圖1]顯示一個具體實施方式的基板組件的示意圖。[Fig. 1] A schematic diagram showing a substrate assembly according to a specific embodiment.

[圖2]顯示一個具體實施方式的形成基板組件的方法流程示意圖。[Fig. 2] A schematic diagram showing the process flow of a method for forming a substrate assembly according to a specific embodiment.

[圖3]顯示一個具體實施方式的銀-鉍的二元相圖。[Figure 3] shows a binary phase diagram of silver-bismuth in a specific embodiment.

[圖4]顯示一個具體實施方式的錫-鉍的二元相圖。[Figure 4] shows a binary phase diagram of tin-bismuth according to a specific embodiment.

[圖5]顯示一個具體實施方式的鉍-銅的二元相圖。[Figure 5] shows a binary phase diagram of bismuth-copper in a specific embodiment.

100:基板組件 100: Substrate assembly

102:基板 102: substrate

104:焊盤 104: pad

106:表面 106: Surface

108:電子部件 108: Electronic parts

110:焊盤 110: pad

112:表面 112: Surface

114:焊接部 114: Welding Department

116:焊料 116: Solder

118:間隔元件 118: Spacer element

Claims (11)

一種焊料，其特徵在於，其包括： 按重量計90％至99.99％之間的量的第一合金粉末，其包括固相線溫度在170攝氏度和250攝氏度之間的第一合金，所述第一合金包括錫或錫合金； 按重量計0.01％至10％之間的量的第二合金粉末，其包括固相線溫度高於250 攝氏度的第二合金，所述第二合金包括鉍或者鉍合金。A solder, characterized in that it comprises: The first alloy powder in an amount between 90% and 99.99% by weight, which includes a first alloy having a solidus temperature between 170 degrees Celsius and 250 degrees Celsius, the first alloy including tin or tin alloy; The second alloy powder in an amount between 0.01% and 10% by weight includes a second alloy having a solidus temperature higher than 250 degrees Celsius, and the second alloy includes bismuth or a bismuth alloy. 根據請求項1所述的焊料，其特徵在於，所述第二合金包括銀鉍合金，所述銀鉍合金中包括按重量計不超過20％的量的銀。The solder according to claim 1, wherein the second alloy includes a silver-bismuth alloy, and the silver-bismuth alloy includes silver in an amount not exceeding 20% by weight. 根據請求項1所述的焊料，其特徵在於，所述第二合金粉末的粒徑大於等於10微米並且小於等於200微米。The solder according to claim 1, wherein the particle size of the second alloy powder is greater than or equal to 10 micrometers and less than or equal to 200 micrometers. 根據請求項1 所述的焊料，其特徵在於，所述第二合金粉末為球形。The solder according to claim 1, wherein the second alloy powder is spherical. 根據請求項1至4中任意一項所述的焊料，其特徵在於，其包括按照重量計88％至92％的第一合金粉末和第二合金粉末的混合物，以及按重量計8％至12％的助焊劑。The solder according to any one of claims 1 to 4, characterized in that it comprises a mixture of 88% to 92% by weight of the first alloy powder and the second alloy powder, and 8% to 12% by weight % Flux. 一種基板組件，其特徵在於，包括： 基板；以及經由請求項1至5中任意一項所述的焊料形成的焊接部而耦合到所述基板的電子部件，所述焊接部包括分佈在所述基板和所述電子部件之間的由所述第二合金構成的若干個間隔元件。A substrate assembly, characterized in that it comprises: A substrate; and an electronic component coupled to the substrate via a soldering portion formed of the solder according to any one of claims 1 to 5, the soldering portion including a substrate distributed between the substrate and the electronic component The second alloy is composed of several spacer elements. 根據請求項6所述的基板組件，其特徵在於，所述間隔元件呈球形，所述間隔元件的直徑大於等於10微米並且小於等於200微米。The substrate assembly according to claim 6, wherein the spacer element is spherical, and the diameter of the spacer element is greater than or equal to 10 micrometers and less than or equal to 200 micrometers. 根據請求項6或7所述的基板組件，其特徵在於，所述間隔元件的熔點高於所述焊料的熔點。The substrate assembly according to claim 6 or 7, wherein the melting point of the spacer element is higher than the melting point of the solder. 根據請求項6或7所述的基板組件，其特徵在於，所述間隔元件的熔點高於250攝氏度。The substrate assembly according to claim 6 or 7, wherein the melting point of the spacer element is higher than 250 degrees Celsius. 一種將電子部件裝配到基板的方法，其特徵在於，包括： 放置模板步驟202：將模板設置於在所述基板的表面上，所述基板的表面包括至少一個焊盤，所述模板具有在所述基板的焊盤上方的開口； 施加焊料步驟204：將請求項1至4中任意一項所述的焊料添加在所述開口內並且移除所述模板； 放置電子部件步驟206：將所述電子部件的接觸部定位在所述焊料上； 以及， 執行焊接回流步驟208：加熱到240攝氏度至255攝氏度使焊料回流15以耦合所述接觸部和所述焊盤，其中，所述第二合金在焊料回流期間保持固態並且維持所述電子部件與所述基板之間的距離。A method for assembling electronic components to a substrate, characterized in that it comprises: Step 202 of placing a template: setting a template on the surface of the substrate, the surface of the substrate includes at least one pad, and the template has an opening above the pad of the substrate; Step 204 of applying solder: adding the solder according to any one of the requirements 1 to 4 in the opening and removing the template; Step 206 of placing an electronic component: positioning the contact portion of the electronic component on the solder; as well as, Perform solder reflow step 208: heat to 240 degrees Celsius to 255 degrees Celsius to reflow the solder 15 to couple the contact portion and the pad, wherein the second alloy remains solid during the solder reflow and maintains the electronic components and all The distance between the substrates. 根據請求項10所述的方法，其特徵在於，所述距離在10至200微米之間。The method according to claim 10, wherein the distance is between 10 and 200 microns.
TW109138646A 2019-11-07 2020-11-05 Solder, substrate assembly and assembly method thereof TW202142338A (en)

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EP1266975A1 (en) * 2001-06-12 2002-12-18 ESEC Trading SA Lead-free solder
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