TW202138330A - Laser texturing of glass - Google Patents
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- 239000010937 tungsten Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/06—Forming glass sheets
- C03B17/065—Forming profiled, patterned or corrugated sheets
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/025—Purification; Separation; Stabilisation; Desodorisation of organo-phosphorus compounds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/06—Phosphorus compounds without P—C bonds
- C07F9/08—Esters of oxyacids of phosphorus
- C07F9/141—Esters of phosphorous acids
- C07F9/145—Esters of phosphorous acids with hydroxyaryl compounds
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2204/00—Glasses, glazes or enamels with special properties
- C03C2204/08—Glass having a rough surface
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Life Sciences & Earth Sciences (AREA)
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Abstract
Description
本申請案主張2020年1月27日申請之美國臨時申請案第62/966,324序列號之權益，該申請案之內容被依賴並以全文引用之方式併入本文，如同在下文被完全闡述一樣。This application claims the rights of U.S. Provisional Application Serial No. 62/966,324 filed on January 27, 2020. The content of this application is relied on and incorporated herein by reference in its entirety, as if fully explained below.
本揭露總體上係關於玻璃基板的刻紋，且更特定而言係關於玻璃基板的雷射刻紋。The present disclosure generally relates to the engraving of glass substrates, and more specifically, it relates to the laser engraving of glass substrates.
薄玻璃基板通常在平板顯示器(flat panel display；FPD)裝置(諸如液晶顯示器(liquid crystal display；LCD)及有機發光二極體(organic light emitting diode；OLED)顯示器)中利用。在FPD裝置中使用的基板通常具有薄膜電晶體在其上製造的功能A側表面及與A側表面相背對的非功能背側或B側表面。在製造FPD裝置期間，玻璃基板之B側表面可與具有各種材料(諸如金屬、陶瓷、聚合材料及類似物)的輸送和處置設備接觸。在基板與這些材料之間的相互作用通常經由摩擦帶電效應或接觸帶電而產生電荷。因此，電荷被轉移到玻璃表面且可累積在基板上。隨著電荷累積在玻璃基板之表面上，玻璃基板之表面電壓也改變。Thin glass substrates are commonly used in flat panel display (FPD) devices such as liquid crystal displays (LCD) and organic light emitting diode (OLED) displays. The substrate used in the FPD device generally has a functional A-side surface on which a thin film transistor is fabricated, and a non-functional backside or B-side surface opposite to the A-side surface. During the manufacture of the FPD device, the B-side surface of the glass substrate may be in contact with conveying and handling equipment with various materials, such as metals, ceramics, polymeric materials, and the like. The interaction between the substrate and these materials usually generates electric charges through the triboelectric effect or contact charging. Therefore, the charge is transferred to the glass surface and can be accumulated on the substrate. As the charge accumulates on the surface of the glass substrate, the surface voltage of the glass substrate also changes.
FPD裝置中使用的玻璃基板之B側表面之靜電起電(Electrostatic charging；ESC)可降低玻璃基板之性能且/或損壞玻璃基板。例如，B側表面之靜電起電可經由介電崩潰或電場感應起電對沉積在玻璃基板之A側表面上的薄膜電晶體(thin film transistor；TFT)裝置造成閘極損壞。此外，玻璃基板之B側表面的起電可吸引顆粒(諸如灰塵或其他顆粒碎屑)，這可損壞玻璃基板或降低玻璃基板之表面質量。在任一種情況下，玻璃基板之靜電起電可降低FPD裝置製造產率，從而增加製造製程的總成本。Electrostatic charging (ESC) on the B-side surface of the glass substrate used in the FPD device can reduce the performance of the glass substrate and/or damage the glass substrate. For example, the electrostatic electrification of the B-side surface can cause gate damage to the thin film transistor (TFT) devices deposited on the A-side surface of the glass substrate through dielectric breakdown or electric field induced electrification. In addition, the electrification of the B-side surface of the glass substrate can attract particles (such as dust or other particle debris), which can damage the glass substrate or reduce the surface quality of the glass substrate. In either case, the electrostatic charging of the glass substrate can reduce the manufacturing yield of FPD devices, thereby increasing the total cost of the manufacturing process.
進一步地，玻璃基板與處置及/或輸送設備之間的摩擦接觸可致使此類設備磨損，從而降低設備之使用壽命。修復或更換經磨損設備導致產生製程停工時間，從而降低製造產率並增加FPD裝置製造製程的總成本。Furthermore, the frictional contact between the glass substrate and the handling and/or conveying equipment can cause such equipment to wear, thereby reducing the service life of the equipment. Repairing or replacing worn-out equipment results in process downtime, thereby reducing manufacturing yield and increasing the total cost of the FPD device manufacturing process.
解決這些問題的一種方法涉及向玻璃基板之至少B側施加濕蝕刻化學物質。示範性濕蝕刻化學物質係包含NaF及H3 PO4 的水溶液。在典型的製程中，濕蝕刻化學溶液循環用於處理多個玻璃板，在該製程期間此類溶液最終經歷劣化並需要更換。此外，此類製程通常在用於處置危險副產物(諸如HF)的安全設備方面涉及附加加工步驟、相當大的加工佔有面積以及顯著投資。另外，濕蝕刻製程不太適於針對不同玻璃類型或所要表面特性進行調整，而無需製程停工時間及/或對加工材料或設備進行實質性改造。One way to solve these problems involves applying wet etching chemicals to at least the B side of the glass substrate. An exemplary wet etching chemistry includes an aqueous solution of NaF and H 3 PO 4. In a typical manufacturing process, wet etching chemical solutions are circulated to process multiple glass plates, during which such solutions eventually undergo deterioration and need to be replaced. In addition, such processes usually involve additional processing steps, a considerable processing footprint, and significant investment in safety equipment for the disposal of hazardous by-products such as HF. In addition, the wet etching process is not suitable for adjusting for different glass types or desired surface characteristics without the need for process downtime and/or substantial modification of processing materials or equipment.
因此，存在對解決這些問題中的一或多個的玻璃基板加工方法的需要。Therefore, there is a need for a glass substrate processing method that solves one or more of these problems.
本文揭示之實施例包括一種製備玻璃製品之方法。該方法包括將原料熔化到熔融玻璃中。該方法還包括由該熔融玻璃形成該玻璃製品。該玻璃製品包括第一主表面及該玻璃製品的與該第一主表面相背對的一側上的第二主表面。此外，該方法包括將至少一個雷射源的射束引導到該玻璃製品的至少該第二主表面上，使得該射束在該第二主表面上賦予複數個刻紋特徵。該複數個刻紋特徵具有在約5奈米至約40奈米範圍內的峰谷高度H。The embodiments disclosed herein include a method of making glass products. The method involves melting raw materials into molten glass. The method also includes forming the glass article from the molten glass. The glass product includes a first major surface and a second major surface on a side of the glass product opposite to the first major surface. In addition, the method includes directing a beam of at least one laser source onto at least the second major surface of the glass article such that the beam imparts a plurality of engraved features on the second major surface. The plurality of engraved features have a peak-to-valley height H in the range of about 5 nanometers to about 40 nanometers.
本文揭示之實施例還包括一種處理玻璃製品之方法。該方法包括將至少一個雷射源的射束引導到該玻璃製品的至少一主表面上，使得該射束在該主表面上賦予複數個刻紋特徵。該複數個刻紋特徵具有在約5奈米至約40奈米範圍內的峰谷高度H。The embodiments disclosed herein also include a method of processing glass products. The method includes directing a beam of at least one laser source onto at least one major surface of the glass article so that the beam imparts a plurality of engraved features on the major surface. The plurality of engraved features have a peak-to-valley height H in the range of about 5 nanometers to about 40 nanometers.
本文揭示之實施例的附加特徵及優點將在以下實施方式中闡述，並部分內容將根據該描述被熟悉此項技術者容易地瞭解或者藉由實踐如本文所描述的揭示實施例(包括以下實施方式、發明申請專利範圍以及附圖)來認識。The additional features and advantages of the embodiments disclosed herein will be described in the following embodiments, and part of the content will be easily understood by those skilled in the art based on the description or by practicing the disclosed embodiments described herein (including the following implementations) Method, the scope of invention patent application and the drawings).
應理解，前述一般描述及以下實施方式兩者都呈現了旨在提供用於理解所主張保護的實施例之性質及特性的概述或框架的實施例。附圖被包括以提供進一步的理解且被併入本說明書中並構成本說明書的一部分。附圖例示本揭露之各種實施例且與描述一起用於解釋其原理及操作。It should be understood that both the foregoing general description and the following embodiments present embodiments intended to provide an overview or framework for understanding the nature and characteristics of the claimed embodiments. The drawings are included to provide further understanding and are incorporated into this specification and constitute a part of this specification. The accompanying drawings illustrate various embodiments of the present disclosure and together with the description serve to explain the principle and operation thereof.
現將詳細參考本揭露之當前較佳實施例，該等實施例之實例說明於附圖中。無論何時，貫穿附圖，相同附圖標號將用於係指相同或相似部件。然而，本揭露可以許多不同形式體現且不應解釋為限於本文闡述之實施例。Reference will now be made in detail to the presently preferred embodiments of the present disclosure, and examples of these embodiments are illustrated in the accompanying drawings. Whenever, throughout the drawings, the same reference numerals will be used to refer to the same or similar parts. However, the present disclosure can be embodied in many different forms and should not be construed as being limited to the embodiments described herein.
範圍在本文中可表達為從「約」一個特定值及/或到「約」另一個特定值。當表達此範圍時，另一個實施例包括從一個特定值及/或到另一個特定值。類似地，當例如藉助於使用先行詞「約」將值表達為近似值時，將理解特定值形成另一個實施例。進一步將理解，每個範圍的端點與另一個端點相關及獨立於另一個端點都是重要的。Ranges can be expressed herein as from "about" one specific value and/or to "about" another specific value. When expressing this range, another embodiment includes from one specific value and/or to another specific value. Similarly, when a value is expressed as an approximation, for example by means of the use of the antecedent "about," it will be understood that a particular value forms another embodiment. It will be further understood that it is important that the endpoint of each range is related to and independent of the other endpoint.
本文所使用的方向術語——例如上、下、右、左、前、後、頂部、底部——僅參考所繪製附圖進行且並不旨在暗示絕對取向。Directional terms used herein—for example, up, down, right, left, front, back, top, bottom—are only made with reference to the drawn drawings and are not intended to imply absolute orientation.
除非另外明確說明，否則決不旨在將本文闡述的任何方法解釋為要求以特定順序執行其步驟，也不需要以任何設備特定的取向進行解釋。因此，在方法請求項並未實際上敘述其步驟要遵循的順序，或者任何設備請求項並未實際上敘述單個部件的順序或取向，或者在發明申請專利範圍或描述中並未另外特別聲明步驟受限於特定順序，或者並未陳述設備組件的特定順序或取向的情況下，在任何方面絕不旨在推斷順序或取向。這適用於任何可能的非表達的解釋基礎，包括：關於步驟安排、操作流程、部件順序或組件取向的邏輯問題；源自語法組織或標點符號的簡潔含義；以及說明書中描述的實施例的數量或類型。Unless explicitly stated otherwise, it is by no means intended to interpret any method set forth herein as requiring its steps to be performed in a specific order, nor does it need to be interpreted in any device-specific orientation. Therefore, the method claim does not actually state the order in which the steps are to be followed, or any equipment claim does not actually describe the order or orientation of the individual components, or the scope or description of the invention application does not specifically state the steps. Limited to a specific order, or where a specific order or orientation of device components is not stated, it is never intended to infer the order or orientation in any respect. This applies to any possible non-expressive interpretation basis, including: logical issues regarding the arrangement of steps, operating procedures, component order, or component orientation; concise meaning derived from grammatical organization or punctuation; and the number of embodiments described in the specification Or type.
除非上下文另外清楚指示，否則如本文所用，單數形式「一個」、「一種」及「該」包括複數個參考對象。因此，例如，除非上下文另外明確指示，否則對「一個」組件的參考包括具有二或更多個此類組件的方面。Unless the context clearly indicates otherwise, as used herein, the singular forms "a", "a" and "the" include plural reference objects. Thus, for example, unless the context clearly dictates otherwise, a reference to "a" component includes an aspect having two or more such components.
如本文所用，術語「玻璃製品」係指可處於各種加工狀態的一定量的玻璃，諸如玻璃帶或其一部分及/或玻璃板或其一部分。本文揭示之實施例包括其中玻璃製品包含第一主表面及相背對的第二主表面的彼等實施例。在一些實施例中，第一主表面可與第二主表面實質上平行。As used herein, the term "glass article" refers to a certain amount of glass that can be in various processing states, such as a glass ribbon or a part thereof and/or a glass plate or a part thereof. The embodiments disclosed herein include those in which the glass article includes a first major surface and an opposite second major surface. In some embodiments, the first major surface may be substantially parallel to the second major surface.
第1圖中示出的是示範性玻璃製造設備10。在一些實例中，玻璃製造設備10可包含玻璃熔化爐12，該玻璃熔化爐12可包括熔化容器14。除熔化容器14之外，玻璃熔化爐12可視情況包括一或多個附加部件，諸如加熱原料並將原料轉化為熔融玻璃的加熱元件(例如，燃燒燈或電極)。在另外的實例中，玻璃熔化爐12可包括減少從熔化容器附近損失的熱量的熱管理裝置(例如，絕緣部件)。在另外的實例中，玻璃熔化爐12可包括有利於將原料熔化為玻璃熔體的電子裝置及/或電機裝置。更進一步地，玻璃熔化爐12可包括支撐結構(例如，支撐底盤、支撐構件等)或其他部件。Shown in Figure 1 is an exemplary
玻璃熔化容器14通常包含耐火材料，諸如耐火陶瓷材料(例如包含氧化鋁或氧化鋯的耐火陶瓷材料)。在一些實例中，玻璃熔化容器14可由耐火陶瓷磚構成。玻璃熔化容器14的具體實施例將在下文更詳細地描述。The
在一些實例中，玻璃熔化爐可被併入為玻璃製造設備的部件以製造玻璃板，例如具有連續長度的玻璃帶。在一些實例中，本揭露的玻璃熔化爐可被併入為玻璃製造設備的部件，該玻璃製造設備包含狹槽拉製設備、浮浴設備、下拉設備(諸如熔合製程)、上拉設備、壓軋設備、管拉製設備或將受益於本文揭示之態樣的任何其他玻璃製造設備。藉由實例的方式，第1圖示意性地將玻璃熔化爐12例示為熔合下拉玻璃製造設備10的部件，該熔合下拉玻璃製造設備10用於熔合拉製玻璃帶以供隨後加工為單個玻璃板。In some examples, the glass melting furnace may be incorporated as a part of glass manufacturing equipment to manufacture glass sheets, such as glass ribbons having a continuous length. In some examples, the glass melting furnace of the present disclosure can be incorporated as a part of glass manufacturing equipment, which includes slot drawing equipment, floating bath equipment, pull-down equipment (such as a fusion process), pull-up equipment, press Rolling equipment, tube drawing equipment or any other glass manufacturing equipment that would benefit from the aspects disclosed herein. By way of example, Fig. 1 schematically illustrates the
玻璃製造設備10 (例如，熔合下拉設備10)可視情況包括相對於玻璃熔化容器14定位在上游的上游玻璃製造設備16。在一些實例中，上游玻璃製造設備16的一部分或整個上游玻璃製造設備16可被併入為玻璃熔化爐12的一部分。The glass manufacturing facility 10 (for example, the fusion down-drawing facility 10) may optionally include an upstream glass manufacturing facility 16 positioned upstream with respect to the
如所例示的實例所示，上游玻璃製造設備16可包括儲存倉18、原料遞送裝置20及連接到原料遞送裝置的電機22。儲存倉18可經組配來儲存一定量的原料24，該一定量的原料24可被餽送到玻璃熔化爐12的熔化容器14中，如箭頭26所指示。原料24通常包含一或多種形成玻璃的金屬氧化物及一或多種改性劑。在一些實例中，原料遞送裝置20可由電機22供電，使得原料遞送裝置20將預定量的原料24從儲存倉18遞送至熔化容器14。在另外的實例中，電機22可基於在熔化容器14的下游感測到的熔融玻璃的液位來給原料遞送裝置20供電以便以受控速率引入原料24。此後可加熱熔化容器14內的原料24以形成熔融玻璃28。As shown in the illustrated example, the upstream glass manufacturing equipment 16 may include a
玻璃製造設備10還可視情況包括相對於玻璃熔化爐12定位在下游的下游玻璃製造設備30。在一些實例中，下游玻璃製造設備30的一部分可被併入為玻璃熔化爐12的一部分。在一些情況下，下游玻璃製造設備30的下文論述的第一連接導管32或其他部分可被併入為玻璃熔化爐12的一部分。下游玻璃製造設備的元件(包括第一連接導管32)可由貴金屬形成。合適的貴金屬包括選自由鉑、銥、銠、鋨、釕及鈀或它們的合金組成的金屬之群的鉑族金屬。例如，玻璃製造設備之下游部件可由鉑-銠合金形成，該鉑-銠合金包括約70重量%至約90重量%的鉑及約10重量%至約30重量%的銠。然而，其他合適的金屬可包括鉬、鈀、錸、鉭、鈦、鎢及其合金。The
下游玻璃製造設備30可包括位於熔化容器14的下游且經由上述第一連接導管32耦接到熔化容器14的第一調節(即，加工)容器，諸如澄清容器34。在一些實例中，可將熔融玻璃28經由第一連接導管32從熔化容器14重力餽送至澄清容器34。例如，重力可致使熔融玻璃28穿過第一連接導管32的從熔化容器14到澄清容器34的內部路徑。然而，應理解，其他調節容器可定位在熔化容器14的下游，例如定位在熔化容器14與澄清容器34之間。在一些實施方案中，可在熔化容器與澄清容器之間採用調節容器，其中將來自初級熔化容器的熔融玻璃進一步加熱以繼續熔化製程，或者冷卻至低於熔化容器中熔融玻璃的溫度的溫度，之後進入澄清容器。The downstream
可藉由各種技術從澄清容器34內的熔融玻璃28移除氣泡。例如，原料24可包括多價化合物(即，澄清劑)(諸如氧化錫)，該多價化合物在被加熱時經歷化學還原反應並釋放氧氣。其他合適的澄清劑包括但不限於砷、銻、鐵及鈰。將澄清容器34加熱至高於熔化容器溫度的溫度，從而加熱熔融玻璃及澄清劑。由一或多種澄清劑的溫度誘導的化學還原產生的氧氣泡穿過澄清容器內的熔融玻璃上升，其中在熔化爐中產生的熔融玻璃中的氣體可擴散或聚結到由澄清劑產生的氧氣泡中。然後，擴大的氣體氣泡可上升到澄清容器中熔融玻璃的自由表面，且然後從澄清容器排出。氧氣泡可進一步誘導澄清容器中熔融玻璃的機械混合。The bubbles can be removed from the
下游玻璃製造設備30可進一步包括另一個調節容器，諸如用於混合熔融玻璃的混合容器36。混合容器36可位於澄清容器34的下游。混合容器36可用於提供均質玻璃熔體組合物，從而減少可原本存在於離開澄清容器的已澄清熔融玻璃內的化學或熱非均質性簾線。如圖所示，澄清容器34可經由第二連接導管38耦接到混合容器36。在一些實例中，可將熔融玻璃28經由第二連接導管38從澄清容器34重力餽送至混合容器36。例如，重力可致使熔融玻璃28穿過第二連接導管38的從澄清容器34到混合容器36的內部路徑。應注意，雖然示出混合容器36位於澄清容器34的下游，但是混合容器36可定位在澄清容器34的上游。在一些實施例中，下游玻璃製造設備30可包括多個混合容器，例如在澄清容器34上游的混合容器及在澄清容器34下游的混合容器。這些多個混合容器可具有相同設計，或者它們可具有不同設計。The downstream
下游玻璃製造設備30可進一步包括另一個調節容器，諸如可位於混合容器36下游的遞送容器40。遞送容器40可調節熔融玻璃28以餽送到下游形成裝置中。例如，遞送容器40可用作蓄積器及/或流量控制器以調整熔融玻璃28且/或經由出口導管44將恆定流量的熔融玻璃28提供至形成主體42。如圖所示，混合容器36可經由第三連接導管46耦接到遞送容器40。在一些實例中，可將熔融玻璃28經由第三連接導管46從混合容器36重力餽送至遞送容器40。例如，重力可驅動熔融玻璃28穿過第三連接導管46的從混合容器36到遞送容器40的內部路徑。The downstream
下游玻璃製造設備30可進一步包括形成設備48，該形成設備48包含上述形成主體42及入口導管50。出口導管44可定位成將熔融玻璃28從遞送容器40遞送至形成設備48之入口導管50。例如，出口導管44可嵌套在入口導管50之內表面內並與該內表面間隔開，從而提供熔融玻璃之定位在出口導管44之外表面與入口導管50之內表面之間的自由表面。熔合下拉玻璃製備設備中的形成主體42可包含槽52，該槽52定位在形成主體之上表面中；以及會聚形成表面54，該會聚形成表面54沿著形成主體之底部邊緣56在拉製方向上會聚。經由遞送容器40、出口導管44及入口導管50遞送至形成主體槽的熔融玻璃溢出槽之側壁，且作為熔融玻璃之單獨流沿著會聚形成表面54下降。熔融玻璃之單獨流在底部邊緣56下方並沿著底部邊緣56匯合以產生藉由例如由重力、邊緣輥72及拉輥82向玻璃帶施加張力而在拉製或流動方向60上從底部邊緣56拉製的單一玻璃帶58，以便在玻璃冷卻並玻璃黏度增加時控制玻璃帶之尺寸。因此，玻璃帶58經歷黏彈性轉變且獲得給予玻璃帶58穩定尺寸特性的機械性質。在一些實施例中，玻璃帶58可藉由玻璃分離裝置100在玻璃帶之彈性區域中分離成單個玻璃板62。然後，機器人64可使用夾持工具65將單個玻璃板62轉移至輸送機系統，隨後可進一步加工單個玻璃板。The downstream
第2圖示出玻璃板62之透視圖，該玻璃板62具有第一主表面162；第二主表面164，該第二主表面164在與第一主表面162大體平行的方向上延伸(在玻璃板62的與第一主表面相背對的一側上)；及邊緣表面166，該邊緣表面166在第一主表面162與第二主表面164之間延伸且在大體垂直於第一主表面162及第二主表面164的方向上延伸。Figure 2 shows a perspective view of a
第3圖示出熔合拉製玻璃的雷射刻紋的示範性實施例之示意性側視圖。如第3圖所示，熔融玻璃之單獨流作為熔融玻璃之單獨流沿著會聚形成表面54下降，該熔融玻璃之單獨流在形成主體42之底部邊緣56下方並沿著該底部邊緣56匯合以產生在拉製或流動方向60上拉製的單一玻璃帶58。當玻璃帶58在拉製或流動方向60上拉製時，將至少一個雷射源150之射束152引導到玻璃帶58的一側，諸如旨在成為玻璃板62的B側表面或第二主表面164的那側。Figure 3 shows a schematic side view of an exemplary embodiment of laser engraving of fusion drawn glass. As shown in Fig. 3, the separate flow of molten glass descends along the convergent forming
在一個實施例中，雷射源150之射束152聚焦在玻璃帶58之表面上。在另一個實施例中，雷射源150之射束152以玻璃帶58之厚度聚焦在玻璃帶58之表面下方。雷射源150通常以防止玻璃從玻璃帶58顯著燒蝕並防止雷射源150之射束152穿透玻璃帶58的波長及功率操作。然而，在一些實施例中，當玻璃帶處於黏性狀態時，玻璃帶58之表面可發生輕微燒蝕，而不會從玻璃帶58之表面形成相關聯顆粒碎屑。在這些實施例中，在雷射射束152撞擊之後玻璃帶58的回流導致形成複數個刻紋特徵。In one embodiment, the
第4圖示出示範性玻璃板62的一部分之示意性橫截面圖，該玻璃板62具有第一主表面162及包括複數個刻紋特徵166的第二主表面164。刻紋特徵166從玻璃板62之第二主表面164或B側表面延伸。刻紋特徵166之峰谷高度在第4圖中示出為H且相鄰刻紋特徵166之間的中心對中心間距在第4圖中示出為P。如本文所使用，「峰谷高度」係指在厚度方向(例如，正交於第一主表面或第二主表面中的至少一者的方向)上在刻紋特徵的最接近玻璃板主表面(例如，第二主表面164)之平面的部分與刻紋特徵的與玻璃板主表面之平面相距最遠的部分之間的距離。如本文所使用，「相鄰刻紋特徵之間的中心對中心間距」係指相鄰刻紋特徵的與玻璃板主表面(例如，第二主表面164)之平面相距最遠的部分之間的最短距離。FIG. 4 shows a schematic cross-sectional view of a portion of an
第5圖示出包括複數個刻紋特徵166的示範性玻璃板62的一部分之示意性頂視圖。相鄰刻紋特徵之間的中心對中心間距在第5圖中示出為P。第5圖中示出的玻璃板62的部分之表面積係尺寸X與Y的乘積，且刻紋特徵166在該表面積內的密度可藉由對表面積內觀察到的刻紋特徵進行計數(第5圖中示出為五個刻紋特徵)並除以表面積來獲得。Figure 5 shows a schematic top view of a portion of an
本文揭示之實施例包括將至少一個雷射源之雷射射束引導到玻璃製品(諸如玻璃帶)之至少第二主表面上，使得該射束在該第二主表面上賦予複數個刻紋特徵，該複數個刻紋特徵具有在約5奈米至約40奈米，諸如約10奈米至約35奈米，且進一步諸如約15奈米至約30奈米範圍內的峰谷高度H。The embodiments disclosed herein include directing a laser beam of at least one laser source onto at least a second major surface of a glass article (such as a glass ribbon) such that the beam imparts a plurality of engravings on the second major surface Features, the plurality of engraved features have a peak-to-valley height H in the range of about 5 nanometers to about 40 nanometers, such as about 10 nanometers to about 35 nanometers, and further such as about 15 nanometers to about 30 nanometers .
在某些示範性實施例中，該第二主表面上的該複數個刻紋特徵的密度係至少約0.1個/平方微米，諸如至少約0.2個/平方微米，且進一步諸如至少約0.5個/平方微米，且再進一步諸如至少約1個/平方微米，諸如約0.1個/平方微米至約100個/平方微米，諸如約0.2個/平方微米至約50個/平方微米且進一步諸如約0.5個/平方微米至約10個/平方微米。In certain exemplary embodiments, the density of the plurality of engraved features on the second major surface is at least about 0.1 per square micrometer, such as at least about 0.2 per square micrometer, and further such as at least about 0.5 per square micrometer. Square micrometer, and still further such as at least about 1/square micrometer, such as about 0.1/square micrometer to about 100/square micrometer, such as about 0.2/square micrometer to about 50/square micrometer and further such as about 0.5 / Square micron to about 10 / square micron.
在某些示範性實施例中，該第二主表面上的相鄰刻紋特徵之間的中心對中心間距P在至少一個方向上在約0.1微米至約20微米，諸如在至少一個方向上在約0.2微米至約10微米，且進一步諸如在至少一個方向上在約0.5微米至約5微米的範圍內。In certain exemplary embodiments, the center-to-center spacing P between adjacent engraved features on the second major surface is about 0.1 micrometers to about 20 micrometers in at least one direction, such as in at least one direction. About 0.2 microns to about 10 microns, and further such as in the range of about 0.5 microns to about 5 microns in at least one direction.
在某些示範性實施例中，該第二主表面之表面粗糙度Ra係至少約0.5奈米，諸如至少約0.6奈米，且進一步諸如至少約0.7奈米，諸如約0.5奈米至約1.0奈米，如藉由原子力顯微術(atomic force microscopy；AFM)所測量。Ra被計算為表面輪廓之算術平均離差。In certain exemplary embodiments, the surface roughness Ra of the second main surface is at least about 0.5 nanometers, such as at least about 0.6 nanometers, and further such as at least about 0.7 nanometers, such as about 0.5 nanometers to about 1.0 nanometers. Nanometers, as measured by atomic force microscopy (AFM). Ra is calculated as the arithmetic mean deviation of the surface profile.
在某些示範性實施例中，當將該至少一個雷射源之該雷射射束引導到該玻璃製品之至少該第二主表面上時該玻璃製品之黏度小於約1013 泊(退火點)，諸如介於約104 泊(工作點)與約1013 泊之間，且進一步諸如介於約107.6 泊(軟化點)與約1013 泊之間。In certain exemplary embodiments, when the laser beam of the at least one laser source is directed onto at least the second major surface of the glass product, the viscosity of the glass product is less than about 10 13 poise (annealing point) ), such as between about 104 poise (operating point) of between and about 1,013 poise, and further such as between about 10 7.6 poises (softening point) between about 1013 and poise.
在某些示範性實施例中，當將該至少一個雷射源之該雷射射束引導在該玻璃製品之至少該第二主表面上時，該玻璃製品之溫度係至少約800℃，諸如約800℃至約1,000℃。In certain exemplary embodiments, when the laser beam of the at least one laser source is directed on at least the second major surface of the glass article, the temperature of the glass article is at least about 800°C, such as About 800°C to about 1,000°C.
在某些示範性實施例中，該玻璃製品在該第一主表面與該第二主表面之間的厚度小於或等於約0.5毫米，諸如約0.1毫米至約0.5毫米且進一步諸如約0.2毫米至約0.4毫米。In certain exemplary embodiments, the thickness of the glass article between the first major surface and the second major surface is less than or equal to about 0.5 mm, such as about 0.1 mm to about 0.5 mm and further such as about 0.2 mm to about 0.5 mm. Approximately 0.4 mm.
在某些示範性實施例中，該雷射源包含CO2 雷射，該CO2 雷射操作來引導一雷射射束，該雷射射束包含約1瓦至約5瓦，諸如約2瓦至約4瓦的功率。該雷射射束能夠跨越該玻璃製品之整個尺寸，例如該玻璃帶之寬度在正交於拉製方向的方向上以約1釐米/秒至約5釐米/秒，諸如約2釐米/秒至約4釐米/秒的掃描速率進行掃描。該雷射射束的掃描能夠例如藉由使用沿著預定路徑引導該雷射射束的電流計驅動的光學器件(例如，鏡)來完成。In certain exemplary embodiments, the laser source includes a CO 2 laser, and the CO 2 laser operates to direct a laser beam, the laser beam comprising about 1 watt to about 5 watts, such as about 2 watts. Watt to about 4 watts of power. The laser beam can span the entire size of the glass article. For example, the width of the glass ribbon is about 1 cm/sec to about 5 cm/sec, such as about 2 cm/sec to about 5 cm/sec in the direction orthogonal to the drawing direction. Scan at a scan rate of about 4 cm/sec. The scanning of the laser beam can be accomplished, for example, by using an optical device (for example, a mirror) driven by a galvanometer that guides the laser beam along a predetermined path.
在此類功率範圍及掃描速率內將該雷射源操作到玻璃製品諸如玻璃帶之至少該第二主表面上能夠實現形成本文描述之關於例如峰谷高度H、密度、中心對中心間距P或表面粗糙度Ra中的一或多者的刻紋特徵形貌，該玻璃製品具有小於約1013 泊的黏度及/或至少約800℃的溫度。Operating the laser source on at least the second major surface of a glass article such as a glass ribbon within such a power range and scan rate can achieve formation of the peak-to-valley height H, density, center-to-center spacing P or The etched feature topography of one or more of the surface roughness Ra, the glass article has a viscosity of less than about 10 13 poise and/or a temperature of at least about 800°C.
本文揭示之實施例能夠與多種玻璃組合物一起使用。此類組合物能夠例如包括玻璃組合物，諸如無鹼玻璃組合物，該無鹼玻璃組合物包含58-65重量% SiO2 、14-20重量% Al2 O3 、8-12重量% B2 O3 、1-3重量% MgO、5-10重量% CaO及0.5-2重量% SrO。此類組合物還能夠包括玻璃組合物，諸如無鹼玻璃組合物，該無鹼玻璃組合物包含58-65重量% SiO2 、16- 22重量% Al2 O3 、1-5重量% B2 O3 、1-4重量% MgO、2-6重量% CaO、1-4重量% SrO及5-10重量% BaO。此類組合物進一步能夠包括玻璃組合物，諸如無鹼玻璃組合物，該無鹼玻璃組合物包含57-61重量% SiO2 、17-21重量% Al2 O3 、5-8重量% B2 O3 、1-5重量% MgO、3- 9重量% CaO、0-6重量% SrO及0-7重量% BaO。此類組合物另外能夠包括玻璃組合物，諸如無鹼玻璃組合物，該無鹼玻璃組合物包含55-72重量% SiO2 、12-24重量% Al2 O3 、10-18重量% Na2 O、0-10重量% B2 O3 、0-5重量% K2 O、0-5重量% MgO及0- 5重量% CaO，該無鹼玻璃組合物在某些實施例中也能夠包括1-5重量% K2 O及1-5重量% MgO。The embodiments disclosed herein can be used with a variety of glass compositions. Such a composition can, for example, include a glass composition, such as an alkali-free glass composition, the alkali-free glass composition comprising 58-65% by weight SiO 2 , 14-20% by weight Al 2 O 3 , and 8-12% by weight B 2 O 3 , 1-3% by weight MgO, 5-10% by weight CaO, and 0.5-2% by weight SrO. Such compositions can also include glass compositions, such as alkali-free glass compositions comprising 58-65% by weight SiO 2 , 16-22% by weight Al 2 O 3 , and 1-5% by weight B 2 O 3 , 1-4% by weight MgO, 2-6% by weight CaO, 1-4% by weight SrO, and 5-10% by weight BaO. Such compositions can further include glass compositions, such as alkali-free glass compositions comprising 57-61% by weight SiO 2 , 17-21% by weight Al 2 O 3 , and 5-8% by weight B 2 O 3 , 1-5 wt% MgO, 3-9 wt% CaO, 0-6 wt% SrO, and 0-7 wt% BaO. Such compositions can additionally include glass compositions, such as alkali-free glass compositions comprising 55-72% by weight SiO 2 , 12-24% by weight Al 2 O 3 , and 10-18% by weight Na 2 O, 0-10 wt% B 2 O 3 , 0-5 wt% K 2 O, 0-5 wt% MgO and 0-5 wt% CaO, the alkali-free glass composition can also include 1-5% by weight K 2 O and 1-5% by weight MgO.
本文揭示之實施例可導致玻璃基板的表面電壓實質性降低，這進而可能夠減少對沉積在玻璃基板之A側表面上的TFT裝置的閘極損壞以及減少玻璃基板之表面上的顆粒物質(諸如灰塵或其他顆粒碎屑)。特別地，與具有在該些範圍之外的峰谷高度H、密度及/或中心對中心間距P的刻紋特徵相比，具有在本文揭示之實施例的此等範圍內的峰谷高度H、密度及/或中心對中心間距P的刻紋特徵可實現足夠的電場變化以實現改良的表面電壓降低水平。The embodiments disclosed herein can result in a substantial reduction in the surface voltage of the glass substrate, which in turn can reduce the gate damage to the TFT device deposited on the A-side surface of the glass substrate and reduce the particulate matter on the surface of the glass substrate (such as Dust or other particulate debris). In particular, compared with the engraved feature having the peak-to-valley height H, density, and/or center-to-center spacing P outside these ranges, the peak-to-valley height H within these ranges of the embodiments disclosed herein , Density and/or center-to-center spacing P can achieve sufficient electric field changes to achieve an improved surface voltage reduction level.
儘管已經參考熔合下拉製程描述了上述實施例，但是應理解，此類實施例也適用於其他玻璃形成製程，諸如浮式製程、狹槽拉製製程、上拉製程、管拉製製程及壓軋製程。Although the above embodiments have been described with reference to the fusion down-draw process, it should be understood that such embodiments are also applicable to other glass forming processes, such as floating processes, slot drawing processes, up-drawing processes, tube-drawing processes, and rolling Process.
熟習此項技術者將明白，在不脫離本揭露之精神及範疇的情況下，可對本揭露之實施例做出修改及變化。因此，預期本揭露涵蓋此類修改及變化，只要它們在附隨請求項及其等效物之範疇內。Those familiar with the technology will understand that modifications and changes can be made to the embodiments of the present disclosure without departing from the spirit and scope of the present disclosure. Therefore, this disclosure is expected to cover such modifications and changes as long as they are within the scope of the accompanying claims and their equivalents.
10:玻璃製造設備、熔合下拉設備 12:玻璃熔化爐 14:玻璃熔化槽 16:上游玻璃製造設備 18:儲存倉 20:原料遞送裝置 22:電機 24:原料 26:箭頭 28:熔融玻璃 30:下游玻璃製造設備 32:第一連接導管 34:澄清槽 36:混合容器 38:第二連接導管 40:遞送容器 42:形成主體 44:出口導管 46:第三連接導管 48:形成設備 50:入口導管 52:槽 54:會聚形成表面 56:底部邊緣 58:玻璃帶 60:拉製或流動方向 62:玻璃板 64:機器人 65:夾持工具 72:邊緣輥 82:拉輥 100:玻璃分離裝置 150:雷射源 152:雷射射束 162:第一主表面 164:第二主表面 166:邊緣表面、刻紋特徵10: Glass manufacturing equipment, fusion pull-down equipment 12: Glass melting furnace 14: Glass melting tank 16: Upstream glass manufacturing equipment 18: Storage warehouse 20: Material delivery device 22: Motor 24: raw materials 26: Arrow 28: molten glass 30: Downstream glass manufacturing equipment 32: The first connecting duct 34: Clarification tank 36: mixing container 38: second connecting duct 40: delivery container 42: Form the main body 44: Outlet duct 46: third connecting duct 48: forming equipment 50: inlet duct 52: Slot 54: Converge to form a surface 56: bottom edge 58: glass ribbon 60: drawing or flow direction 62: glass plate 64: Robot 65: Clamping tool 72: edge roller 82: Pull roll 100: Glass separation device 150: Laser source 152: Laser beam 162: The first major surface 164: Second Major Surface 166: Edge surface, engraved features
第1圖係示範性熔合下拉式玻璃製備設備及製程之示意圖；Figure 1 is a schematic diagram of an exemplary fusion pull-down glass manufacturing equipment and process;
第2圖係玻璃板之透視圖；Figure 2 is a perspective view of the glass plate;
第3圖係熔合拉製玻璃的示範性雷射刻紋之示意性側視圖；Figure 3 is a schematic side view of an exemplary laser engraving of fusion drawn glass;
第4圖係包括複數個刻紋特徵的示範性玻璃板的一部分之示意性橫截面圖；且Figure 4 is a schematic cross-sectional view of a portion of an exemplary glass plate including a plurality of engraved features; and
第5圖係包括複數個刻紋特徵的示範性玻璃板的一部分之示意性頂視圖。Figure 5 is a schematic top view of a portion of an exemplary glass plate including a plurality of engraved features.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無Domestic deposit information (please note in the order of deposit institution, date and number) without Foreign hosting information (please note in the order of hosting country, institution, date, and number) without
62:玻璃板 62: glass plate
166:刻紋特徵 166: engraved features
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