TW202124747A - Film forming device capable of adjusting film formation conditions for obtaining a desired film on the basis of accurately understanding the status of energy distribution - Google Patents

Film forming device capable of adjusting film formation conditions for obtaining a desired film on the basis of accurately understanding the status of energy distribution Download PDF

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TW202124747A
TW202124747A TW109145448A TW109145448A TW202124747A TW 202124747 A TW202124747 A TW 202124747A TW 109145448 A TW109145448 A TW 109145448A TW 109145448 A TW109145448 A TW 109145448A TW 202124747 A TW202124747 A TW 202124747A
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film
energy
film forming
plasma
energy distribution
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北見尚久
山本哲也
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日商住友重機械工業股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3142—Ion plating

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Abstract

The present invention provides a film forming device capable of forming a film under more appropriate conditions in order to obtain a desired film. In the film forming device (1), a monitoring part (52) is capable of monitoring the energy of a plurality of feature parts (FP1, FP2, FP3) in the energy distribution of particles used for forming a film of a predetermined material. The monitoring part (52) does not monitor a single feature part of the energy distribution (for example, only monitors the feature part (FP3), etc.), but monitors the energy of a plurality of feature parts (FP1, FP2, FP3), thereby allowing a more accurate understanding of the status of energy distribution. Therefore, a film formation control part (54) is capable of adjusting the film formation conditions for obtaining the desired film, on the basis of accurately understanding the status of energy distribution. As described above, in order to obtain a desired film, film formation can be undertaken under more appropriate conditions.

Description

成膜裝置Film forming device

本發明有關一種成膜裝置。The present invention relates to a film forming device.

作為使成膜材料的粒子附著於對象物而形成膜之成膜裝置，已知專利文獻1中所記載者。該成膜裝置係使用電漿槍於腔室內生成電漿，且於腔室內使成膜材料蒸發。成膜材料附著於基板，藉此於該基板上形成膜。 [先前技術文獻] [專利文獻]As a film forming apparatus that makes particles of a film forming material adhere to an object to form a film, what is described in Patent Document 1 is known. The film forming device uses a plasma gun to generate plasma in the chamber, and evaporates the film forming material in the chamber. The film-forming material is attached to the substrate, thereby forming a film on the substrate. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本特開2016-141856號專利公報[Patent Document 1] Japanese Patent Application Laid-Open No. 2016-141856

[發明欲解決之課題][The problem to be solved by the invention]

在此，於上述成膜裝置測量電漿槍的陰極與陽極之間的電壓，並基於該測量結果調整了成膜條件。該電壓的測量結果能夠用於粒子入射到基板時的能量分布中最大能量的監視。然而，無法僅藉由最大能量掌握能量分布整體的狀態。因此，需要一種為了得到所希望的膜而能夠在更適當的條件下進行成膜的成膜裝置。Here, the voltage between the cathode and the anode of the plasma gun was measured in the above-mentioned film forming apparatus, and the film forming conditions were adjusted based on the measurement result. The measurement result of this voltage can be used to monitor the maximum energy in the energy distribution when the particles are incident on the substrate. However, it is not possible to grasp the overall state of the energy distribution based on the maximum energy alone. Therefore, there is a need for a film forming apparatus that can perform film formation under more appropriate conditions in order to obtain a desired film.

於是，本發明的課題為提供一種為了得到所希望的膜而能夠在更適當的條件下進行成膜之成膜裝置。 [解決課題之手段]Therefore, the subject of the present invention is to provide a film forming apparatus capable of forming a film under more appropriate conditions in order to obtain a desired film. [Means to solve the problem]

本發明之成膜裝置係使成膜材料的粒子附著於對象物而形成膜；其特徵為具備：成膜部，係藉由向對象物供給粒子而形成膜；監視部，係監視相對於前述對象物之粒子的能量分布中的複數個特徵部的能量；以及調整部，係基於藉由資訊及監視部得到之監視結果來調整成膜條件。The film-forming apparatus of the present invention attaches particles of a film-forming material to an object to form a film; and is characterized by including: a film-forming section that forms a film by supplying particles to the object; and a monitoring section that monitors The energy of a plurality of characteristic parts in the energy distribution of the particles of the object; and the adjustment part, which adjusts the film forming conditions based on the monitoring results obtained by the information and monitoring part.

本發明之成膜裝置中，監視部能夠監視用於形成既定物質的膜之粒子的能量分布中的複數個特徵部的能量。監視部並非監視能量分布的單一特徵部而是監視複數個特徵部的能量，藉此能夠更準確地掌握能量分布的狀況。因此，調整部在準確地掌握能量分布的狀況之基礎上，還能夠調整用於得到所希望的膜的成膜條件。依以上所述，為了得到所希望的膜而能夠在更適當的條件下進行成膜。In the film forming apparatus of the present invention, the monitoring unit can monitor the energy of a plurality of characteristic portions in the energy distribution of the particles used to form the film of the predetermined substance. The monitoring unit does not monitor a single characteristic part of the energy distribution but monitors the energy of a plurality of characteristic parts, thereby being able to more accurately grasp the status of the energy distribution. Therefore, the adjustment part can adjust the film formation conditions for obtaining a desired film in addition to accurately grasping the state of the energy distribution. As described above, in order to obtain a desired film, film formation can be performed under more appropriate conditions.

監視部可以監視從能量低之一側觀察能量分布時形成之第1峰的能量、於比第1峰高之能量側形成之第2峰的能量及能量分布中的最大能量中的至少任一個作為特徵部。藉此，監視部能夠準確地掌握能量分布的狀況。The monitoring unit can monitor at least one of the energy of the first peak formed when observing the energy distribution from the lower energy side, the energy of the second peak formed on the energy side higher than the first peak, and the maximum energy of the energy distribution As a feature part. Thereby, the monitoring unit can accurately grasp the status of the energy distribution.

成膜部具備射出電漿之電漿槍及保持成膜材料的同時將電漿導引至成膜材料之陽極，藉此藉由離子鍍法進行成膜，監視部可以基於測量電漿電位而得之測量結果、測量為了使電漿槍的電漿收斂而具有電磁線圈之中間電極與陽極之間的電壓而得之測量結果及測量電漿槍的陰極與陽極之間的電壓而得之測量結果中的至少任一個進行監視。藉此，監視部能夠適當地監視能量分布的特徵部的能量。 [發明效果]The film-forming part is equipped with a plasma gun that injects plasma and guides the plasma to the anode of the film-forming material while holding the film-forming material, so that the film is formed by the ion plating method, and the monitoring part can measure the plasma potential. The measurement result, the measurement result of the voltage between the middle electrode and the anode of the electromagnetic coil in order to make the plasma of the plasma gun converge, and the measurement result of the voltage between the cathode and the anode of the plasma gun At least any one of the results is monitored. Thereby, the monitoring unit can appropriately monitor the energy of the characteristic part of the energy distribution. [Effects of the invention]

依本發明，能夠提供一種為了得到所希望的膜而能夠在更適當的條件下進行成膜之成膜裝置。According to the present invention, it is possible to provide a film forming apparatus capable of forming a film under more appropriate conditions in order to obtain a desired film.

以下，參閱附圖並對本發明的一實施形態之成膜裝置進行說明。另外，在附圖的說明中，對相同的要件賦予相同的元件符號，並省略重複說明。Hereinafter, referring to the drawings, a film forming apparatus according to an embodiment of the present invention will be described. In addition, in the description of the drawings, the same reference numerals are given to the same elements, and repeated descriptions are omitted.

首先，參閱圖1對本發明的實施形態之成膜裝置的結構進行說明。圖1係本實施形態之成膜裝置的區塊結構圖。成膜裝置1係使成膜材料的粒子附著於對象物而形成膜之裝置。如圖1所示，成膜裝置1具備成膜部100、第1測量部101、第2測量部102、第3測量部103及控制部50。成膜部100針對作為對象物之基板進行成膜。第1測量部101、第2測量部102及第3測量部103進行用於監視在成膜時針對基板飛來之粒子的能量之測量。控制部50進行成膜裝置1整體的控制。First, referring to FIG. 1, the structure of the film forming apparatus according to the embodiment of the present invention will be described. Fig. 1 is a block diagram of the film forming apparatus of this embodiment. The film forming apparatus 1 is an apparatus for forming a film by attaching particles of a film forming material to an object. As shown in FIG. 1, the film forming apparatus 1 includes a film forming unit 100, a first measuring unit 101, a second measuring unit 102, a third measuring unit 103, and a control unit 50. The film forming part 100 forms a film on a substrate as an object. The first measurement unit 101, the second measurement unit 102, and the third measurement unit 103 perform measurement for monitoring the energy of particles flying to the substrate during film formation. The control unit 50 controls the entire film forming apparatus 1.

參閱圖2對成膜部100、第1測量部101、第2測量部102及第3測量部103進行說明。圖2為表示成膜裝置1的結構之概略剖面圖。如圖2所示，本實施形態的成膜裝置1為所謂離子鍍法中所使用之離子鍍裝置。另外，為了方便說明，圖2中示出XYZ座標系統。Y軸方向為搬運後述基板之方向。Z軸方向為基板與後述爐缸機構相對向之位置。X軸方向為與Y軸方向和Z軸方向正交之方向。The film forming part 100, the first measuring part 101, the second measuring part 102, and the third measuring part 103 will be described with reference to FIG. 2. FIG. 2 is a schematic cross-sectional view showing the structure of the film forming apparatus 1. As shown in FIG. 2, the film forming apparatus 1 of this embodiment is an ion plating apparatus used in a so-called ion plating method. In addition, for the convenience of description, the XYZ coordinate system is shown in FIG. 2. The Y-axis direction is the direction in which the substrate described later is transported. The Z-axis direction is the position where the substrate faces the hearth mechanism described later. The X-axis direction is a direction orthogonal to the Y-axis direction and the Z-axis direction.

成膜裝置1係基板11以基板11的板厚方向成為大致垂直方向之方式配置於真空腔室10內而被搬運之所謂臥式成膜裝置。此時，X軸及Y軸方向為水平方向，Z軸方向成為垂直方向且板厚方向。另外，成膜裝置1亦可以為以基板11的板厚方向成為水平方向(圖1及圖2中為Z軸方向)之方式在使基板11直立或從直立之狀態傾斜之狀態下，基板11配置於真空腔室10內而被搬運之所謂立式成膜裝置。此時，Z軸方向為水平方向且基板11的板厚方向，Y軸方向為水平方向，X軸方向成為垂直方向。The film forming apparatus 1 is a so-called horizontal film forming apparatus in which the substrate 11 is arranged in a vacuum chamber 10 and conveyed so that the thickness direction of the substrate 11 becomes a substantially vertical direction. At this time, the X-axis and Y-axis directions are the horizontal directions, and the Z-axis direction is the vertical direction and the plate thickness direction. In addition, the film forming apparatus 1 may be such that the thickness direction of the substrate 11 becomes the horizontal direction (the Z-axis direction in FIGS. 1 and 2). A so-called vertical film forming apparatus arranged in the vacuum chamber 10 and transported. At this time, the Z-axis direction is the horizontal direction and the thickness direction of the substrate 11, the Y-axis direction is the horizontal direction, and the X-axis direction is the vertical direction.

成膜部100係藉由向基板11供給成膜材料Ma的粒子Mb而於基板11的表面形成膜之部分。成膜部100具備真空腔室10、搬運機構3、成膜機構14、氣體供給部40及電流供給部80。The film forming part 100 is a part where a film is formed on the surface of the substrate 11 by supplying the particles Mb of the film forming material Ma to the substrate 11. The film forming unit 100 includes a vacuum chamber 10, a conveying mechanism 3, a film forming mechanism 14, a gas supply unit 40, and a current supply unit 80.

真空腔室10為用於收納基板11並進行成膜處理之構件。真空腔室10具有：搬運室10a，用於搬運形成成膜材料Ma的膜之基板11；成膜室10b，使成膜材料Ma擴散；及電漿口10c，將從電漿槍7以束狀照射之電漿P接收到真空腔室10中。搬運室10a、成膜室10b及電漿口10c相互連通。搬運室10a沿既定的搬運方向(圖中的箭頭A)(沿Y軸)被設定。並且，真空腔室10由導電性的材料構成且與接地電位連接。The vacuum chamber 10 is a member for storing the substrate 11 and performing film formation processing. The vacuum chamber 10 has: a transport chamber 10a for transporting the substrate 11 for forming a film of the film forming material Ma; a film forming chamber 10b for spreading the film forming material Ma; and a plasma port 10c, which beams the plasma gun 7 The irradiated plasma P is received into the vacuum chamber 10. The transfer chamber 10a, the film formation chamber 10b, and the plasma port 10c communicate with each other. The conveyance room 10a is set along the predetermined conveyance direction (arrow A in the figure) (along the Y axis). In addition, the vacuum chamber 10 is made of a conductive material and is connected to the ground potential.

成膜室10b作為壁部10W，具有：沿著搬運方向(箭頭A)之一對側壁、沿著與搬運方向(箭頭A)交叉之方向(Z軸方向)之一對側壁10h、10i、及與X軸方向交叉而配置之底面壁10j。The film forming chamber 10b, as the wall portion 10W, has a pair of side walls along the conveying direction (arrow A), a pair of side walls 10h, 10i along a direction (Z-axis direction) crossing the conveying direction (arrow A), and The bottom wall 10j is arranged to cross the X-axis direction.

搬運機構3沿搬運方向(箭頭A)搬運在與成膜材料Ma對向之狀態下保持基板11之基板保持構件16。例如，基板保持構件16為保持基板11的外周緣之框體。搬運機構3由設置於搬運室10a內之複數個搬運輥15構成。搬運輥15沿搬運方向(箭頭A)等間隔配置，在支撐基板保持構件16的同時沿搬運方向(箭頭A)進行搬運。另外，基板11例如使用玻璃基板或塑膠基板等板狀構件。The transport mechanism 3 transports the substrate holding member 16 that holds the substrate 11 in a state facing the film-forming material Ma in the transport direction (arrow A). For example, the substrate holding member 16 is a frame that holds the outer periphery of the substrate 11. The conveying mechanism 3 is composed of a plurality of conveying rollers 15 installed in the conveying chamber 10a. The conveyance rollers 15 are arranged at equal intervals in the conveyance direction (arrow A), and convey the substrate holding member 16 in the conveyance direction (arrow A) while supporting the substrate holding member 16. In addition, for the substrate 11, a plate-shaped member such as a glass substrate or a plastic substrate is used, for example.

接著，對成膜機構14的結構進行詳細說明。成膜機構14藉由離子鍍法使成膜材料Ma的粒子附著於基板11。成膜機構14具有電漿槍7、轉向線圈5、爐缸機構2及環爐缸6。Next, the structure of the film forming mechanism 14 will be described in detail. The film forming mechanism 14 adheres the particles of the film forming material Ma to the substrate 11 by an ion plating method. The film forming mechanism 14 has a plasma gun 7, a steering coil 5, a hearth mechanism 2 and a ring hearth 6.

電漿槍7例如為壓力梯度型的電漿槍，其主體部分經由設置於成膜室10b的側壁之電漿口10c與成膜室10b連接。電漿槍7在真空腔室10內生成電漿P。在電漿槍7中所生成之電漿P從電漿口10c向成膜室10b內以射束狀射出。藉此，在成膜室10b內生成電漿P。The plasma gun 7 is, for example, a pressure gradient type plasma gun, and its main body is connected to the film forming chamber 10b via a plasma port 10c provided on the side wall of the film forming chamber 10b. The plasma gun 7 generates plasma P in the vacuum chamber 10. The plasma P generated in the plasma gun 7 is emitted in a beam shape from the plasma port 10c into the film forming chamber 10b. Thereby, plasma P is generated in the film forming chamber 10b.

電漿槍7藉由陰極60封閉一端。在陰極60與電漿口10c之間，同心地配置有第1中間電極(柵格)61及第2中間電極(柵格)62。在第1中間電極61內內裝有用於收斂電漿P之環狀永久磁鐵61a。在第2中間電極62內亦內裝有用於收斂電漿P之電磁體線圈62a。The plasma gun 7 is closed at one end by the cathode 60. Between the cathode 60 and the plasma port 10c, a first intermediate electrode (grid) 61 and a second intermediate electrode (grid) 62 are arranged concentrically. A ring-shaped permanent magnet 61a for converging the plasma P is installed in the first intermediate electrode 61. An electromagnet coil 62a for converging the plasma P is also installed in the second intermediate electrode 62.

轉向線圈5設置於安裝有電漿槍之電漿口10c的周圍。轉向線圈5將電漿P引導至成膜室10b內。轉向線圈5藉由轉向線圈用電源(未圖示)被激勵。The steering coil 5 is arranged around the plasma port 10c where the plasma gun is installed. The steering coil 5 guides the plasma P into the film forming chamber 10b. The steering coil 5 is excited by a power supply (not shown) for the steering coil.

爐缸機構2保持成膜材料Ma。爐缸機構2設置於真空腔室10的成膜室10b內，從搬運機構3觀察時配置於Z軸方向的負方向上。爐缸機構2具有作為將從電漿槍7射出之電漿P引導至成膜材料Ma之主陽極或從電漿槍7射出之電漿P被引導之主陽極之主爐缸17。The hearth mechanism 2 holds the film forming material Ma. The hearth mechanism 2 is installed in the film forming chamber 10b of the vacuum chamber 10, and is arranged in the negative direction of the Z-axis direction when viewed from the conveying mechanism 3. The hearth mechanism 2 has a main hearth 17 as a main anode that guides the plasma P injected from the plasma gun 7 to the film-forming material Ma or the main anode that guides the plasma P injected from the plasma gun 7.

主爐缸17具有：筒狀的填充部17a，填充有成膜材料Ma且沿Z軸方向的正方向延伸；及凸緣部17b，從填充部17a突出。主爐缸17相對於真空腔室10所具有之地電位保持為正電位，因此主爐缸17放電時成為陽極並吸引電漿P。入射有該電漿P之主爐缸17的填充部17a中形成有用於填充成膜材料Ma之貫通孔17c。並且，成膜材料Ma的前端部分在該貫通孔17c的一端露出到成膜室10b。The main hearth 17 has a cylindrical filling part 17a filled with the film-forming material Ma and extending in the positive direction of the Z-axis direction, and a flange part 17b protruding from the filling part 17a. The main hearth 17 is maintained at a positive potential with respect to the ground potential of the vacuum chamber 10, so the main hearth 17 becomes an anode when it is discharged and attracts the plasma P. A through hole 17c for filling the film forming material Ma is formed in the filling portion 17a of the main hearth 17 into which the plasma P is incident. The tip portion of the film forming material Ma is exposed to the film forming chamber 10b at one end of the through hole 17c.

關於成膜材料Ma，並無特別限定，能夠依所希望的膜而適當地選擇，例如可例示ITO(Indium Tin Oxide：銦錫氧化物)和ZnO等透明導電材料、SiON等絕緣密封材料。當成膜材料Ma由絕緣性物質組成時，若對主爐缸17照射電漿P束，則藉由來自電漿P束之電流而主爐缸17被加熱，成膜材料Ma的前端部分蒸發，且藉由電漿P束被離子化之粒子Mb向成膜室10b內擴散。又，當成膜材料Ma由導電性物質組成時，若對主爐缸17照射電漿P束，則電漿P束直接入射到成膜材料Ma，成膜材料Ma的前端部分被加熱而蒸發，且藉由電漿P束被離子化之粒子Mb向成膜室10b內擴散。向成膜室10b內擴散之粒子Mb向成膜室10b的Z軸正方向移動，並在搬運室10a內附著於基板11的表面。另外，成膜材料Ma係成形為既定長度的圓柱形狀之固體物，並且複數種成膜材料Ma一次填充於爐缸機構2。而且，依據成膜材料Ma的消耗，從爐缸機構2的Z軸負方向側依序擠出成膜材料Ma，以使最前端側的成膜材料Ma的前端部分與主爐缸17的上端保持既定的位置關係。The film forming material Ma is not particularly limited, and can be appropriately selected depending on the desired film. For example, transparent conductive materials such as ITO (Indium Tin Oxide) and ZnO, and insulating sealing materials such as SiON can be exemplified. When the film-forming material Ma is composed of an insulating material, if the main hearth 17 is irradiated with a plasma P beam, the main hearth 17 is heated by the current from the plasma P beam, and the tip part of the film-forming material Ma evaporates. And the particles Mb ionized by the plasma P beam diffuse into the film forming chamber 10b. Also, when the film-forming material Ma is composed of a conductive material, if the main hearth 17 is irradiated with the plasma P beam, the plasma P beam will directly enter the film-forming material Ma, and the tip portion of the film-forming material Ma is heated and evaporated. And the particles Mb ionized by the plasma P beam diffuse into the film forming chamber 10b. The particles Mb diffused into the film formation chamber 10b move in the positive direction of the Z axis of the film formation chamber 10b, and adhere to the surface of the substrate 11 in the transfer chamber 10a. In addition, the film-forming material Ma is shaped into a cylindrical solid object of a predetermined length, and plural kinds of film-forming materials Ma are filled in the hearth mechanism 2 at a time. Furthermore, according to the consumption of the film forming material Ma, the film forming material Ma is sequentially extruded from the negative direction side of the Z-axis of the hearth mechanism 2 so that the tip portion of the film forming material Ma on the foremost side and the upper end of the main hearth 17 Maintain the established positional relationship.

環爐缸6為具有用於感應電漿P之電磁體之輔助陽極。環爐缸6配置於保持成膜材料Ma之主爐缸17的填充部17a的周圍。環爐缸6具有環狀的線圈9、環狀的永久磁鐵部20及環狀的容器12，線圈9及永久磁鐵部20容納於容器12。本實施形態中，從搬運機構3觀察時沿Z軸負方向依序設置有線圈9、永久磁鐵部20，但亦可以沿Z軸負方向依序設置有永久磁鐵部20、線圈9。環爐缸6依據流過線圈9之電流的大小來控制入射到成膜材料Ma之電漿P的朝向或入射到主爐缸17之電漿P的朝向。The ring hearth 6 is an auxiliary anode with an electromagnet for inducing plasma P. The ring hearth 6 is arranged around the filling portion 17a of the main hearth 17 holding the film forming material Ma. The ring hearth 6 has a ring-shaped coil 9, a ring-shaped permanent magnet portion 20 and a ring-shaped container 12, and the coil 9 and the permanent magnet portion 20 are housed in the container 12. In this embodiment, the coil 9 and the permanent magnet portion 20 are sequentially arranged along the negative direction of the Z-axis when viewed from the conveying mechanism 3, but the permanent magnet portion 20 and the coil 9 may be sequentially arranged along the negative direction of the Z-axis. The ring hearth 6 controls the direction of the plasma P incident on the film-forming material Ma or the direction of the plasma P incident on the main hearth 17 according to the magnitude of the current flowing through the coil 9.

氣體供給部40向真空腔室10內供給載氣及氧氣。作為載體氣體中含有之物質，例如採用氬氣、氦氣等稀有氣體。氣體供給部40配置於真空腔室10的外部，藉由設置於成膜室10b的側壁(例如，側壁10h)之氣體供給口41向真空腔室10內供給原料氣體。氣體供給部40供給基於來自控制部50的控制訊號之流量的載氣及氧氣。The gas supply unit 40 supplies carrier gas and oxygen into the vacuum chamber 10. As the substance contained in the carrier gas, for example, rare gases such as argon and helium are used. The gas supply unit 40 is arranged outside the vacuum chamber 10, and supplies the raw material gas into the vacuum chamber 10 through the gas supply port 41 provided on the side wall (for example, the side wall 10h) of the film forming chamber 10b. The gas supply unit 40 supplies carrier gas and oxygen based on the flow rate of the control signal from the control unit 50.

電流供給部80向電漿槍7供給用於進行成膜材料的離子化之電流。電流供給部80向電漿槍7的陰極60供給電流。藉此，電漿槍7以既定值的放電電流進行放電。電流供給部80供給基於來自控制部50的控制訊號之電流值的電流。The current supply unit 80 supplies a current for ionizing the film-forming material to the plasma gun 7. The current supply unit 80 supplies current to the cathode 60 of the plasma gun 7. Thereby, the plasma gun 7 discharges with the discharge current of a predetermined value. The current supply unit 80 supplies a current based on the current value of the control signal from the control unit 50.

在此，在對測量部101、102、103及控制部50進行說明之前，對向基板11飛來而入射的粒子Mb的能量進行說明。圖3為表示粒子Mb入射到基板11的表面而形成膜70時的狀況之示意圖。若飛來而入射之粒子Mb(狀態A)到達現有膜70的表面70a(在初始狀態下，基板11的表面11a)(狀態B)，則在表面70a上擴散(狀態B～C)。而且，粒子Mb進入到膜70的內部，並於該膜70內擴散(狀態D)而進入到既定空隙中。若以平台/階梯/扭結模型而言，亦能夠表達為到達表面70a之粒子Mb到達階梯、扭結並結合而形成膜(狀態B～C)或進入空隙，擴散並與周圍原子結合而形成膜(狀態D)。Here, before describing the measurement units 101, 102, 103 and the control unit 50, the energy of the particles Mb that fly to and enter the substrate 11 will be described. FIG. 3 is a schematic diagram showing a situation when particles Mb are incident on the surface of the substrate 11 to form a film 70. When the particles Mb flying and incident (state A) reach the surface 70a of the existing film 70 (in the initial state, the surface 11a of the substrate 11) (state B), they diffuse on the surface 70a (states B to C). Then, the particles Mb enter the film 70, diffuse in the film 70 (state D), and enter a predetermined gap. In terms of the platform/stairs/kink model, it can also be expressed as the particles Mb reaching the surface 70a reach the stairs, kink and combine to form a film (states B to C) or enter the gap, diffuse and combine with surrounding atoms to form a film ( State D).

本申請發明人等鑑於上述行為，關於需要控制成所飛來之粒子Mb(狀態A)具有多少能量，得到了如下見解。具體而言，粒子Mb於膜70內擴散(狀態D)時需要的能量亦即體內擴散能量係低熔點金屬時為3eV左右，高熔點金屬時為9eV左右。而且，粒子Mb於表面70a擴散(狀態B～C)時需要的能量亦即表面擴散能量(還稱為凝聚能量)係如圖4所示依元素而不同，且具有2～9eV的範圍。亦即，所入射之粒子Mb(狀態B的粒子Mb)需要至少具有5～12eV左右的擴散能量(=體內擴散能量+表面擴散能量)。進而，若假定粒子Mb與表面70a碰撞而能量的6～8成變為熱能量，則剩餘能量的2～4成變為擴散能量。若考慮該方面，則需要將飛來之粒子Mb(狀態A)的能量(以下，有時稱為入射能量)控制在12.5～60eV的範圍內。此外，假定7～8成能量變為熱能量時，將入射能量控制在16.6～60eV的範圍內。In view of the above behavior, the inventors of the present application have obtained the following knowledge regarding how much energy must be controlled so that the flying particles Mb (state A) have. Specifically, the energy required for the particles Mb to diffuse in the film 70 (state D), that is, the internal diffusion energy is about 3 eV when the low melting point metal is used, and about 9 eV when the high melting point metal is used. In addition, the energy required for the particles Mb to diffuse on the surface 70a (states B to C), that is, the surface diffusion energy (also referred to as aggregation energy) is different depending on the element as shown in FIG. 4, and has a range of 2-9 eV. That is, the incident particles Mb (particles Mb in state B) need to have at least about 5-12 eV of diffusion energy (=internal diffusion energy + surface diffusion energy). Furthermore, assuming that the particles Mb collide with the surface 70a and 60% to 80% of the energy becomes thermal energy, 20% to 40% of the remaining energy becomes diffusion energy. Considering this aspect, it is necessary to control the energy of the flying particles Mb (state A) (hereinafter, sometimes referred to as incident energy) within the range of 12.5 to 60 eV. In addition, assuming that 70% to 80% of energy becomes thermal energy, the incident energy is controlled within the range of 16.6 to 60 eV.

又，發明人等得到了如下見解，亦即能夠藉由調整粒子Mb的入射能量來調整所得到之膜70的取向度。圖5(a)係表示作為一例控制入射能量而形成了ZnO的膜70時的結果之圖表。關於ZnO的成膜，在成膜裝置1中Zn具有充分的離子能量和通量，若O側不充分則結晶性發生變化。圖5(a)的圖表中，以O+ 的能量通量與O的能量通量之比為橫軸，以作為結晶性的指標之取向性的半值寬度為縱軸。隨著O+ 的能量通量的增加而半值寬度變小，且取向趨於對齊(從圖表的左上側朝向右下側)。亦即，圖表的右下側區域為得到如圖5(c)使取向對齊之膜之區域，圖表的左上側區域為得到如圖5(b)破壞取向之膜之區域，圖表的中間區域為得到中間取向度的膜之區域。上述12.5～60eV(或者16.6～60eV)之類的入射能量為得到如圖5(c)所示取向對齊之膜70時需要的元素(在此為Zn或O)的粒子Mb的入射能量。欲得到如圖5(b)所示故意破壞取向之膜70時，如下控制即可，亦即作為更高的入射能量而引起濺射，或者相反地進而降低能量以免表面擴散。此外，在以下說明中，有時將為了故意破壞取向而額外需要的入射能量稱為「取向調整能量」。該取向調整能量既有正能量亦有負能量。又，為了與取向調整能量區分而將上述12.5～60eV(或者16.6～60eV)之類的入射能量稱為「基本能量」。In addition, the inventors have obtained the knowledge that the degree of orientation of the obtained film 70 can be adjusted by adjusting the incident energy of the particles Mb. FIG. 5(a) is a graph showing the result when the ZnO film 70 is formed by controlling the incident energy as an example. Regarding the film formation of ZnO, Zn has sufficient ion energy and flux in the film forming apparatus 1, and if the O side is insufficient, the crystallinity changes. In the graph of Fig. 5(a), the ratio of the energy flux of O+ to the energy flux of O is taken as the horizontal axis, and the half-value width of the orientation, which is an index of crystallinity, is taken as the vertical axis. As the energy flux of O+ increases, the half-value width becomes smaller, and the orientation tends to be aligned (from the upper left side of the graph to the lower right side). That is, the lower right area of the graph is the area where the film with the orientation aligned as shown in Figure 5(c) is obtained, the upper left area of the graph is the area where the film with the broken orientation is obtained as shown in Figure 5(b), and the middle area of the graph is A region of the film with an intermediate degree of orientation is obtained. The above-mentioned incident energy of 12.5-60 eV (or 16.6-60 eV) is the incident energy of the particles Mb of the element (here, Zn or O) required to obtain the aligned film 70 as shown in FIG. 5(c). To obtain a film 70 with intentional destruction of orientation as shown in FIG. 5(b), the following control is sufficient, that is, as a higher incident energy to cause sputtering, or conversely, reduce the energy to prevent surface diffusion. In addition, in the following description, the incident energy that is additionally required to intentionally destroy the orientation may be referred to as "orientation adjustment energy". The orientation adjustment energy has both positive energy and negative energy. In order to distinguish it from the alignment adjustment energy, the aforementioned incident energy such as 12.5 to 60 eV (or 16.6 to 60 eV) is referred to as "basic energy".

依以上見解，本發明人等關於成膜裝置的控制，進而得到了如下見解。亦即，只要了解用哪種物質形成哪種取向的膜，則依圖4所示之圖表獲取目標膜的物質的表面擴散能量，並基於圖5(a)所示之圖表獲取為了得到目標取向而需要多少取向調整能量，藉此能夠掌握將粒子Mb的入射能量控制成多少即可。而且，能夠事先藉由實驗來掌握用於得到這種所希望的膜之入射能量的能量分布。又，亦能夠預先獲取用於得到該能量分布之成膜條件。藉由以上所述，目標膜的特性、用於得到該膜之粒子的能量分布及成膜條件能夠預先存儲在資料庫中。例如，圖6中示出在某一物質中改變氣體的壓力，並固定其他成膜條件而測量能量分布時的結果的圖表G1、G2、G3。橫軸表示粒子的入射能量，縱軸(例如，對數標度)表示具有相對應之入射能量之粒子的計數。能夠藉由以圖表G1、G2、G3的能量分布進行成膜來得到特性不同之膜。Based on the above findings, the inventors of the present invention have further obtained the following findings regarding the control of the film forming apparatus. That is, as long as you know which material is used to form which orientation film, you can obtain the surface diffusion energy of the material of the target film according to the graph shown in FIG. 4, and obtain the target orientation based on the graph shown in FIG. 5(a) And how much energy for orientation adjustment is needed, so as to be able to grasp how much the incident energy of the particle Mb is controlled to. Furthermore, it is possible to grasp the energy distribution of incident energy for obtaining such a desired film through experiments in advance. In addition, it is also possible to obtain the film forming conditions for obtaining the energy distribution in advance. Based on the above, the characteristics of the target film, the energy distribution of the particles used to obtain the film, and the film forming conditions can be stored in the database in advance. For example, FIG. 6 shows graphs G1, G2, and G3 of the results when the pressure of a gas is changed in a certain substance and other film forming conditions are fixed to measure the energy distribution. The horizontal axis represents the incident energy of the particle, and the vertical axis (for example, a logarithmic scale) represents the count of particles with the corresponding incident energy. Films with different characteristics can be obtained by forming films with the energy distribution of graphs G1, G2, and G3.

因此，控制成膜裝置而得到所希望的膜時，從資料庫等讀取用於得到該膜之粒子的能量分布，並且在與該能量分布建立了關聯之成膜條件下進行成膜即可。但是，即使成膜條件相同時，有時能量分布亦不會與資料庫的能量分布完全相同。因此，本發明人等發現監視粒子的能量分布中的複數個特徵部的能量，並且當所監視之能量中產生偏離時，有效的是調整成膜條件。尤其，本發明人等發現當藉由離子鍍法進行成膜時，監視「(1)從能量低之一側觀察能量分布時形成之第1峰(圖6的FP1)的能量(來自電漿鞘的能量)」、「(2)於比第1峰高之能量側形成之第2峰(圖6的FP2)的能量(成膜時的主要能量)」、「(3)能量分布中的最大能量(圖6的FP3)」作為能量分布的特徵部為較佳。例如，即使特徵部FP1、FP3中無偏離，當特徵部FP2中有偏離時，亦調整成膜條件以消除該偏離。而且，為了監視上述(1)～(3)的能量而能夠使用測量部101、102、103的測量結果。此外，依能量分布的形狀，上述能量分布的第1峰、第2峰有時亦不會明確地顯示為峰(例如，圖表G3中的特徵部FP2)。該情況下，可以將能量分布的平均值或中央值視作峰。Therefore, when controlling the film forming device to obtain the desired film, read the energy distribution of the particles used to obtain the film from a database, etc., and perform film formation under the film forming conditions associated with the energy distribution. . However, even when the film-forming conditions are the same, sometimes the energy distribution may not be exactly the same as the energy distribution of the database. Therefore, the inventors of the present invention discovered that the energy of a plurality of characteristic parts in the energy distribution of the particles is monitored, and when a deviation occurs in the monitored energy, it is effective to adjust the film forming conditions. In particular, the inventors of the present invention found that when the film is formed by the ion plating method, the energy of the first peak (FP1 in FIG. 6) (from the plasma Sheath energy)”, “(2) The energy of the second peak (FP2 in Figure 6) formed on the energy side higher than the first peak (the main energy during film formation)”, “(3) The energy distribution in the energy distribution Maximum energy (FP3 in FIG. 6)" is preferable as the characteristic part of the energy distribution. For example, even if there is no deviation in the feature portions FP1 and FP3, when there is a deviation in the feature portion FP2, the film forming conditions are adjusted to eliminate the deviation. In addition, in order to monitor the energy of (1) to (3) described above, the measurement results of the measurement units 101, 102, and 103 can be used. In addition, depending on the shape of the energy distribution, the first and second peaks of the energy distribution may not be clearly displayed as peaks (for example, the characteristic part FP2 in the graph G3). In this case, the average or central value of the energy distribution can be regarded as the peak.

返回到圖2，第1測量部101測量用於監視上述「(1)從能量低之一側觀察能量分布時形成之第1峰(圖6的FP1)的能量(來自電漿鞘的能量)」之資訊。在此，第1測量部101用設置在基板11的高度位置附近之朗繆爾探針101a測量電漿電位。第1測量部101向控制部50發送測量結果。Returning to FIG. 2, the first measurement unit 101 measures the energy (energy from the plasma sheath) of the first peak (FP1 in FIG. 6) formed when the energy distribution is observed from the lower energy side as described above. "The information. Here, the first measuring unit 101 measures the plasma potential with a Langmuir probe 101a provided near the height position of the substrate 11. The first measurement unit 101 transmits the measurement result to the control unit 50.

第2測量部102測量用於監視「(2)於比第1峰高之能量側形成之第2峰(圖6的FP2)的能量(成膜時的主要能量)」之資訊。在此，第2測量部102測量具有用於使電漿槍7的電漿收斂之電磁線圈之中間電極與陽極之間的電壓。第2測量部102與電漿槍7的第2中間電極62及主爐缸17連接，並測量兩者之間的電壓。第2測量部102向控制部50發送測量結果。The second measurement unit 102 measures information for monitoring "(2) the energy of the second peak (FP2 in FIG. 6) formed on the energy side higher than the first peak (the main energy at the time of film formation)". Here, the second measuring unit 102 measures the voltage between the intermediate electrode and the anode of the electromagnetic coil for converging the plasma of the plasma gun 7. The second measuring unit 102 is connected to the second intermediate electrode 62 of the plasma gun 7 and the main hearth 17 and measures the voltage between the two. The second measurement unit 102 transmits the measurement result to the control unit 50.

第3測量部103測量用於監視「(3)能量分布中的最大能量(圖6的FP3)」之資訊。在此，第3測量部103測量電漿槍7的陰極與陽極之間的電壓。第3測量部103與電漿槍7的陰極60及主爐缸17連接，並測量兩者之間的電壓。第3測量部103向控制部50發送測量結果。The third measurement unit 103 measures information for monitoring "(3) Maximum energy in energy distribution (FP3 in FIG. 6)". Here, the third measuring unit 103 measures the voltage between the cathode and the anode of the plasma gun 7. The third measuring unit 103 is connected to the cathode 60 of the plasma gun 7 and the main hearth 17, and measures the voltage between the two. The third measurement unit 103 transmits the measurement result to the control unit 50.

如圖1所示，控制部50為控制成膜裝置1整體之裝置，其由CPU、RAM、ROM及輸入/輸出接口等構成。控制部50配置於真空腔室10的外部。又，控制部50具備資訊記憶部51、監視部52、資訊取得部53及成膜控制部54(調整部)。As shown in FIG. 1, the control unit 50 is a device that controls the entire film forming apparatus 1 and is composed of a CPU, a RAM, a ROM, an input/output interface, and the like. The control unit 50 is arranged outside the vacuum chamber 10. In addition, the control unit 50 includes an information storage unit 51, a monitoring unit 52, an information acquisition unit 53, and a film formation control unit 54 (adjustment unit).

資訊儲存部51中儲存有成膜裝置1的控制中所使用之各種資訊。資訊記憶部51中記憶有用於得到既定膜之粒子Mb的入射能量的能量分布及用於設為該能量分布之成膜條件的資料表。該資料表可預先進行實驗等而得到。資訊記憶部51中記憶有與膜的物質、取向性等各條件對應之資料表。Various information used in the control of the film forming apparatus 1 is stored in the information storage unit 51. The information storage unit 51 stores a data table for obtaining the energy distribution of the incident energy of the particles Mb of a predetermined film and the film forming conditions for setting the energy distribution. The data sheet can be obtained by conducting experiments in advance. The information storage unit 51 stores data tables corresponding to various conditions such as the substance and orientation of the film.

監視部52監視相對於基板11之粒子Mb的能量分布中的複數個特徵部FP1、FP2、FP3的能量。監視部52基於第1測量部101的測量結果，監視「(1)從能量低之一側觀察能量分布時形成之第1峰(圖6的FP1)的能量(來自電漿鞘的能量)」作為特徵部。監視部52基於第2測量部102的測量結果，監視「(2)於比第1峰高之能量側形成之第2峰(圖6的FP2)的能量(成膜時的主要能量)」作為特徵部。監視部52基於第3測量部103的測量結果，監視「(3)能量分布中的最大能量(圖6的FP3)」作為特徵部。The monitoring unit 52 monitors the energy of the plurality of characteristic portions FP1, FP2, and FP3 in the energy distribution of the particles Mb with respect to the substrate 11. The monitoring unit 52 monitors "(1) the energy (energy from the plasma sheath) of the first peak (FP1 in FIG. 6) formed when the energy distribution is observed from the lower energy side based on the measurement result of the first measurement unit 101. As a feature part. Based on the measurement result of the second measurement unit 102, the monitoring unit 52 monitors "(2) the energy of the second peak (FP2 in FIG. 6) formed on the energy side higher than the first peak (the main energy during film formation)" as Features. The monitoring unit 52 monitors "(3) Maximum energy in the energy distribution (FP3 in FIG. 6)" as a characteristic unit based on the measurement result of the third measurement unit 103.

資訊取得部53從資訊記憶部51的資料庫獲取與用於得到用戶所希望的膜之能量分布及成膜條件有關之資訊。資訊取得部53藉由用戶的輸入等而獲取所希望的膜的物質及取向性等，並將該輸入資訊與資料庫進行對照而獲取與能量分布及成膜條件有關之資訊。例如，當為了得到用戶所希望的膜而需要圖6所示之圖表G2的能量分布時，資訊取得部53從資料庫獲取圖表G2的能量分布，並且獲取與該圖表G2建立了關聯之成膜條件。The information acquisition unit 53 acquires information related to the energy distribution and film formation conditions of the film desired by the user from the database of the information storage unit 51. The information acquiring unit 53 acquires the desired film material and orientation, etc. through user input, etc., and compares the input information with a database to acquire information related to energy distribution and film forming conditions. For example, when the energy distribution of the graph G2 shown in FIG. 6 is required in order to obtain the film desired by the user, the information obtaining unit 53 obtains the energy distribution of the graph G2 from the database, and obtains the film formation associated with the graph G2 condition.

成膜控制部54基於藉由資訊取得部53得到之成膜條件而控制成膜部100。成膜控制部54控制由氣體供給部40供給之氣體的流量及由電流供給部80供給之電流。成膜控制部54以得到作為基本能量之12.5～60eV的範圍(或16.6～60eV的範圍)內的入射能量之方式進行控制，並且當為了破壞取向而需要取向調整能量時，以得到「基本能量+取向調整能量」這一入射能量之方式進行控制。The film formation control unit 54 controls the film formation unit 100 based on the film formation conditions obtained by the information acquisition unit 53. The film formation control unit 54 controls the flow rate of the gas supplied by the gas supply unit 40 and the current supplied by the current supply unit 80. The film formation control section 54 controls to obtain incident energy in the range of 12.5 to 60 eV (or the range of 16.6 to 60 eV) as the basic energy, and when the orientation adjustment energy is required to destroy the orientation, it can obtain the "basic energy +Orientation adjustment energy" is controlled by the method of incident energy.

此外，成膜控制部54未必一定需要從資訊取得部53獲取能量分布及成膜條件，成膜控制部54自身可以基於所希望的膜的條件進行運算，並藉由運算獲取能量分布及成膜條件。In addition, the film formation control section 54 does not necessarily need to obtain the energy distribution and film formation conditions from the information acquisition section 53. The film formation control section 54 itself can perform calculations based on the desired film conditions, and obtain the energy distribution and film formation by calculations. condition.

又，成膜控制部54基於藉由監視部52得到之監視結果而調整成膜條件。例如，當藉由監視部52監視到與特徵部FP2對應之能量偏離了圖表G2的特徵部FP2時，成膜控制部54以抑制該偏離之方式調整成膜條件而進行成膜控制。例如，成膜控制部54調整電流及壓力中的至少一者的條件。此外，偏離的判定藉由與閾值的比較等進行即可。又，偏離量的判定藉由階段性地設定閾值而判定即可。In addition, the film formation control unit 54 adjusts the film formation conditions based on the monitoring result obtained by the monitoring unit 52. For example, when the monitoring unit 52 monitors that the energy corresponding to the characteristic portion FP2 deviates from the characteristic portion FP2 of the graph G2, the film formation control unit 54 adjusts the film formation conditions to suppress the deviation and performs the film formation control. For example, the film formation control unit 54 adjusts conditions of at least one of current and pressure. In addition, the determination of deviation may be performed by comparison with a threshold value or the like. In addition, the determination of the deviation amount may be determined by setting the threshold value step by step.

接著，參閱圖7對藉由本實施形態之成膜裝置1進行之成膜方法進行說明。圖7為表示藉由控制部50執行之處理內容之流程圖。Next, referring to FIG. 7, a film forming method performed by the film forming apparatus 1 of this embodiment will be described. FIG. 7 is a flowchart showing the processing content executed by the control unit 50.

首先，控制部50基於用戶的輸入等獲取所希望的膜的資訊，並設定成膜條件(步驟S10)。此時，資訊取得部53獲取所希望的膜的物質及膜的取向性的資訊。接著，資訊取得部53藉由將所希望的膜的資訊與記憶在資訊記憶部51中之資料表進行對照而獲取用於形成該膜之能量分布及成膜條件。而且，成膜控制部54設定所讀取之成膜條件。接著，成膜控制部54在步驟S10中設定之成膜條件下進行成膜(步驟S20)。此時，測量部101、102、103開始測量。First, the control part 50 acquires the information of a desired film based on a user's input etc., and sets a film formation condition (step S10). At this time, the information acquiring unit 53 acquires information on the substance of the desired film and the orientation of the film. Next, the information obtaining section 53 obtains the energy distribution and film forming conditions for forming the film by comparing the information of the desired film with the data table stored in the information storage section 51. Then, the film formation control unit 54 sets the read film formation conditions. Next, the film formation control unit 54 performs film formation under the film formation conditions set in step S10 (step S20). At this time, the measurement units 101, 102, and 103 start measurement.

接著，監視部52基於測量部101、102、103的測量結果監視相對於基板11之粒子Mb的能量分布中的複數個特徵部FP1、FP2、FP3的能量(步驟S30)。而且，監視部52監視各特徵部FP1、FP2、FP3的能量是否偏離了在步驟S10得到之能量分布，並判定是否不需要調整成膜條件(步驟S40)。當在步驟S40中判定為無需調整時，成膜控制部54判定是否結束了成膜(步驟S50)。當在步驟S50中判定為結束了成膜時，結束圖7所示之處理。當在步驟S50中判定為未結束成膜時，從步驟S20重新開始進行處理，並在相同的成膜條件下持續進行成膜。Next, the monitoring unit 52 monitors the energy of the plurality of characteristic portions FP1, FP2, FP3 in the energy distribution of the particles Mb with respect to the substrate 11 based on the measurement results of the measurement units 101, 102, and 103 (step S30). Furthermore, the monitoring part 52 monitors whether the energy of each characteristic part FP1, FP2, FP3 deviates from the energy distribution obtained in step S10, and determines whether it is unnecessary to adjust the film forming conditions (step S40). When it is determined in step S40 that the adjustment is unnecessary, the film formation control unit 54 determines whether or not the film formation is completed (step S50). When it is determined in step S50 that the film formation has ended, the processing shown in FIG. 7 is ended. When it is determined in step S50 that the film formation has not been completed, the process is restarted from step S20, and the film formation is continued under the same film formation conditions.

另一方面，當在步驟S40中判定為需要調整成膜條件時，返回到步驟S10，成膜控制部54調整成膜條件。例如，當正在監視之特徵部FP2的能量偏離了圖6的圖表G2的特徵部FP2的能量時，成膜控制部54調整成膜條件以抑制該偏離。在步驟S10中成膜控制部54調整了成膜條件之後，在該調整後的成膜條件下重複進行步驟S20以後的處理。On the other hand, when it is determined in step S40 that the film formation conditions need to be adjusted, the process returns to step S10, and the film formation control unit 54 adjusts the film formation conditions. For example, when the energy of the characteristic part FP2 being monitored deviates from the energy of the characteristic part FP2 of the graph G2 of FIG. 6, the film formation control unit 54 adjusts the film formation conditions to suppress the deviation. After the film formation control unit 54 adjusts the film formation conditions in step S10, the process after step S20 is repeated under the adjusted film formation conditions.

接著，對本實施形態之成膜裝置1的作用/效果進行說明。Next, the action/effect of the film forming apparatus 1 of this embodiment will be described.

本實施形態之成膜裝置1中，監視部52能夠監視用於形成既定物質的膜之粒子的能量分布中的複數個特徵部FP1、FP2、FP3的能量。監視部52並非監視能量分布的單一特徵部(例如僅監視特徵部FP3等)而是監視複數個特徵部FP1、FP2、FP3的能量，藉此能夠更準確地掌握能量分布的狀況。因此，成膜控制部54在準確地掌握能量分布的狀況之基礎上，還能夠調整用於得到所希望的膜之成膜條件。依以上所述，為了得到所希望的膜而能夠在更適當的條件下進行成膜。In the film forming apparatus 1 of the present embodiment, the monitoring unit 52 can monitor the energy of a plurality of characteristic portions FP1, FP2, and FP3 in the energy distribution of particles used to form a film of a predetermined substance. The monitoring unit 52 does not monitor a single characteristic part of the energy distribution (for example, only the characteristic part FP3, etc.) but monitors the energy of a plurality of characteristic parts FP1, FP2, FP3, and thereby can more accurately grasp the state of the energy distribution. Therefore, the film formation control unit 54 can adjust the film formation conditions for obtaining a desired film in addition to accurately grasping the state of the energy distribution. As described above, in order to obtain a desired film, film formation can be performed under more appropriate conditions.

監視部52可以監視於從能量低之一側觀察能量分布時形成之第1峰的能量(特徵部FP1)、於比第1峰高之能量側形成之第2峰的能量(特徵部FP2)及能量分布中的最大能量(特徵部FP3)中的至少任一個作為特徵部。藉此，監視部52能夠準確地掌握能量分布的狀況。The monitoring unit 52 can monitor the energy of the first peak formed when the energy distribution is observed from the lower energy side (feature part FP1), and the energy of the second peak formed on the energy side higher than the first peak (feature part FP2) And at least any one of the maximum energy (feature part FP3) in the energy distribution as a feature part. Thereby, the monitoring unit 52 can accurately grasp the state of the energy distribution.

成膜部100具備射出電漿之電漿槍7及保持成膜材料Ma的同時將電漿導引至成膜材料Ma之主爐缸17(陽極)，藉此藉由離子鍍法進行成膜，監視部52可以基於測量電漿電位而得之測量結果(第1測量部101的測量結果)、測量為了使電漿槍7的電漿收斂而具有電磁線圈之第2中間電極62與主爐缸17之間的電壓而得之測量結果(第2測量部102的測量結果)及測量電漿槍7的陰極60與主爐缸17之間的電壓而得之測量結果(第3測量部103的測量結果)中的至少任一個進行監視。藉此，監視部52能夠適當地監視能量分布的特徵部FP1、FP2、FP3的能量。The film forming part 100 is provided with a plasma gun 7 for injecting plasma and holding the film forming material Ma while guiding the plasma to the main hearth 17 (anode) of the film forming material Ma, thereby forming a film by an ion plating method The monitoring unit 52 can measure the measurement result obtained by measuring the plasma potential (the measurement result of the first measurement unit 101), and measure the second intermediate electrode 62 having an electromagnetic coil and the main furnace in order to converge the plasma of the plasma gun 7 The measurement result of the voltage between the cylinder 17 (the measurement result of the second measurement section 102) and the measurement result of the measurement result of the voltage between the cathode 60 of the plasma gun 7 and the main hearth 17 (the third measurement section 103 At least any one of the measurement results). Thereby, the monitoring unit 52 can appropriately monitor the energy of the characteristic parts FP1, FP2, and FP3 of the energy distribution.

本發明並不限定於上述實施形態。The present invention is not limited to the above-mentioned embodiment.

上述實施形態中，作為成膜部而使用了蒸發源與電漿源藉由電漿連接之離子鍍裝置，但成膜部的成膜方式並無特別限定。例如，作為成膜部可以採用蒸發源(電阻加熱或電子束加熱等)與用於活化之電漿分離之離子鍍裝置、濺射裝置、電漿CVD等成膜方式。如此，當成膜方式發生了變化時，對應於各方式而變更能量分布的特徵部的獲取方法、用於監視該特徵部之測量部的測量部位即可。例如，如圖8及圖9所示，對於採用了藉由電漿CVD進行之成膜方法之成膜裝置，可以適用本發明。In the above-mentioned embodiment, an ion plating apparatus in which an evaporation source and a plasma source are connected by plasma is used as the film forming part, but the film forming method of the film forming part is not particularly limited. For example, as the film forming part, a film forming method such as an ion plating device, a sputtering device, plasma CVD, etc., which separates the evaporation source (resistance heating or electron beam heating, etc.) from the plasma used for activation, can be used. In this way, when the film formation method is changed, the method of acquiring the characteristic part of the energy distribution and the measurement location of the measurement part for monitoring the characteristic part may be changed in accordance with each method. For example, as shown in FIGS. 8 and 9, the present invention can be applied to a film forming apparatus that uses a film forming method by plasma CVD.

圖8(a)表示DC放電類型的電漿CVD的成膜裝置150。成膜裝置150在與DC電源152連接之電極151之間產生電漿P。基板11沿與電極151對向方向正交之方向配置，並與偏置電源153連接。又，基板11亦可以配置在一個電極151上。供給到腔室內之原料氣體藉由電漿P被離子化而作為粒子Mb對基板11進行照射。此時，如圖8(b)所示，粒子Mb的入射能量以電漿電位Vs為入射能量的基準而形成峰。因此，能夠監視該峰作為特徵部FP4。為了監視該特徵部FP4，可以於電漿P的基板11附近的部位設置探針156而測量電壓。又，相當於放電電壓的能量成為能量分布中的最大能量。因此，能夠監視能量分布中的最大能量作為特徵部FP5。為了監視該特徵部FP5，可以設置測量DC電源152的電壓之測量部157。FIG. 8(a) shows a plasma CVD film forming apparatus 150 of the DC discharge type. The film forming device 150 generates plasma P between the electrodes 151 connected to the DC power supply 152. The substrate 11 is arranged in a direction orthogonal to the opposing direction of the electrode 151 and is connected to a bias power supply 153. In addition, the substrate 11 may also be arranged on one electrode 151. The raw material gas supplied into the chamber is ionized by the plasma P and irradiates the substrate 11 as particles Mb. At this time, as shown in FIG. 8(b), the incident energy of the particle Mb forms a peak based on the plasma potential Vs as the incident energy. Therefore, the peak can be monitored as the characteristic part FP4. In order to monitor the characteristic portion FP4, a probe 156 may be provided at a location near the substrate 11 of the plasma P to measure the voltage. In addition, the energy corresponding to the discharge voltage becomes the maximum energy in the energy distribution. Therefore, the maximum energy in the energy distribution can be monitored as the characteristic part FP5. In order to monitor the characteristic part FP5, a measuring part 157 for measuring the voltage of the DC power supply 152 may be provided.

圖9(a)表示RF放電類型的電漿CVD的成膜裝置160。成膜裝置160在與經由匹配器165與高頻電源162連接之電極161之間產生電漿P。基板11配置於一個電極161，且該電極161與偏置電源163連接。供給到腔室內之原料氣體藉由電漿P被離子化而作為粒子Mb對基板11進行照射。此時，如圖9(b)所示，粒子Mb的入射能量呈以相當於偏置電壓的電壓VDC 為基準左右對稱且分別形成峰之形狀。該圖表成為越增加高頻電壓則越扁平地擴展的能量分布(參閱虛線所示之圖表)。又，藉由變更該頻率亦能夠控制擴展。於這種能量分布中，能夠監視於基準部位成為朝下之峰之部位作為特徵部FP6。為了監視該特徵部FP6，可以設置測量偏置電源163的電壓之測量部168。又，分布中，在基於高頻的最低值和最大值的部位具有峰，因此能夠監視最低值側的峰作為特徵部FP7a，並監視最大值側的峰作為特徵部FP7b。為了監視該等特徵部FP7a、FP7b，可以設置測量高頻電源162的高頻電壓之測量部167。又，可以於電漿P的基板11附近的部位設置探針166而測量電壓。藉此，可以監視能量的平均值。FIG. 9(a) shows the plasma CVD film forming apparatus 160 of the RF discharge type. The film forming device 160 generates plasma P between the electrode 161 connected to the high-frequency power source 162 via the matching device 165. The substrate 11 is disposed on an electrode 161, and the electrode 161 is connected to a bias power source 163. The raw material gas supplied into the chamber is ionized by the plasma P and irradiates the substrate 11 as particles Mb. At this time, as shown in FIG. 9(b), the incident energy of the particle Mb is symmetrical with respect to the voltage V DC corresponding to the bias voltage as a reference, and each forms a peak shape. This graph becomes an energy distribution that expands flatly as the high-frequency voltage increases (refer to the graph shown by the dotted line). In addition, the expansion can be controlled by changing the frequency. In this energy distribution, the part that becomes the downward peak at the reference part can be monitored as the characteristic part FP6. In order to monitor the characteristic part FP6, a measuring part 168 for measuring the voltage of the bias power supply 163 may be provided. In addition, since the distribution has peaks at the lowest value and the highest value based on the high frequency, the peak on the lowest value side can be monitored as the characteristic portion FP7a, and the peak on the maximum value side can be monitored as the characteristic portion FP7b. In order to monitor the characteristic parts FP7a and FP7b, a measuring part 167 for measuring the high-frequency voltage of the high-frequency power supply 162 may be provided. In addition, a probe 166 may be provided near the substrate 11 of the plasma P to measure the voltage. In this way, the average value of energy can be monitored.

除此以外，可以使用ECR電漿CVD、感應耦合型電漿CVD、表面波電漿CVD及螺旋波電漿CVD等電漿CVD的成膜裝置。該情況下，針對藉由各種方式得到之能量分布任意地設定特徵部，且設置用於監視該特徵部之測量部即可。In addition, plasma CVD film forming apparatuses such as ECR plasma CVD, inductively coupled plasma CVD, surface wave plasma CVD, and spiral wave plasma CVD can be used. In this case, the characteristic part may be arbitrarily set for the energy distribution obtained by various methods, and a measurement part for monitoring the characteristic part may be provided.

1,150,160:成膜裝置 7:電漿槍 17:主爐缸(陽極) 11:基板(對象物) 54:成膜控制部(調整部) 60:陰極 62:第2中間電極 70:膜 100:成膜部 101,102,103:測量部 FP1,FP2,FP3,FP4,FP5,FP6,FP7a,FP7b:特徵部 Ma:成膜材料 Mb:粒子1,150,160: Film forming device 7: Plasma gun 17: Main hearth (anode) 11: Board (object) 54: Film formation control part (adjustment part) 60: Cathode 62: 2nd middle electrode 70: Membrane 100: Film forming department 101, 102, 103: measurement department FP1, FP2, FP3, FP4, FP5, FP6, FP7a, FP7b: Features Ma: Film-forming material Mb: particles

[圖1]為本發明的實施形態之成膜裝置的區塊結構圖。 [圖2]為示出表示成膜裝置之結構之概略剖面圖。 [圖3]為表示粒子入射到基板的表面而形成膜時的狀況之示意圖。 [圖4]為表示與各元素對應之表面擴散能量之圖表。 [圖5]為用於對膜的取向進行說明之圖表及示意圖。 [圖6]為表示能量分布的一例之圖表。 [圖7]為表示由控制部執行之處理內容之流程圖。 [圖8]為對變形例之成膜裝置的監視部進行說明之圖。 [圖9]為對變形例之成膜裝置的監視部進行說明之圖。[Fig. 1] is a block diagram of a film forming apparatus according to an embodiment of the present invention. [Fig. 2] A schematic cross-sectional view showing the structure of a film forming apparatus. Fig. 3 is a schematic diagram showing the state when particles are incident on the surface of the substrate to form a film. [Figure 4] is a graph showing the surface diffusion energy corresponding to each element. [Fig. 5] is a graph and a schematic diagram for explaining the orientation of the film. [Fig. 6] is a graph showing an example of energy distribution. [Fig. 7] is a flowchart showing the processing content executed by the control unit. [Fig. 8] A diagram for explaining the monitoring unit of the film forming apparatus of the modification example. [Fig. 9] A diagram for explaining the monitoring unit of the film forming apparatus of the modification example.

1:成膜裝置 1: Film forming device

50:控制部 50: Control Department

51:資訊記憶部 51: Information Memory Department

52:監視部 52: Surveillance Department

53:資訊取得部 53: Information Acquisition Department

54:成膜控制部 54: Film Formation Control Department

100:成膜裝置 100: Film forming device

101:測量部 101: Measurement Department

102:測量部 102: Measurement Department

103:測量部 103: Measurement Department

Claims (3)

一種成膜裝置，係使成膜材料的粒子附著於對象物而形成膜；其特徵為具備： 成膜部，係藉由向前述對象物供給前述粒子而形成前述膜； 監視部，係監視相對於前述對象物之前述粒子的能量分布中的複數個特徵部的能量；以及 調整部，係基於藉由前述監視部得到之監視結果來調整成膜條件。A film-forming device that attaches particles of film-forming material to an object to form a film; it is characterized by: The film forming part forms the film by supplying the particles to the object; The monitoring part monitors the energy of a plurality of characteristic parts in the energy distribution of the particles relative to the object; and The adjustment unit adjusts the film forming conditions based on the monitoring result obtained by the aforementioned monitoring unit. 如請求項1之成膜裝置，其中， 前述監視部監視如下能量中的至少任一個作為前述特徵部： 於從能量低之一側觀察前述能量分布時形成之第1峰的能量； 於比前述第1峰高之能量側形成之第2峰的能量；以及 前述能量分布中的最大能量。Such as the film forming device of claim 1, in which, The aforementioned monitoring part monitors at least any one of the following energies as the aforementioned characteristic part: The energy of the first peak formed when observing the aforementioned energy distribution from the lower energy side; The energy of the second peak formed on the energy side higher than the aforementioned first peak; and The maximum energy in the aforementioned energy distribution. 如請求項1或請求項2之成膜裝置，其中， 前述成膜部具備射出電漿之電漿槍及保持前述成膜材料的同時將前述電漿導引至前述成膜材料之陽極，藉此藉由離子鍍法進行成膜； 前述監視部基於如下測量結果中的至少任一個進行監視： 測量電漿電位而得之測量結果； 測量為了使前述電漿槍的前述電漿收斂而具有電磁線圈之中間電極與前述陽極之間的電壓而得之測量結果；以及 測量前述電漿槍的陰極與前述陽極之間的電壓而得之測量結果。Such as the film forming device of claim 1 or claim 2, in which, The film forming part is provided with a plasma gun for injecting plasma, and while holding the film forming material, the plasma is guided to the anode of the film forming material, thereby forming a film by an ion plating method; The aforementioned monitoring unit performs monitoring based on at least any of the following measurement results: The measurement result obtained by measuring the plasma potential; The measurement result obtained by measuring the voltage between the intermediate electrode of the electromagnetic coil and the anode in order to converge the plasma of the plasma gun; and The measurement result is obtained by measuring the voltage between the cathode of the plasma gun and the anode.
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