TW202123381A - Substrate support unit, and apparatus and method for depositing a layer using the same - Google Patents

Substrate support unit, and apparatus and method for depositing a layer using the same Download PDF

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TW202123381A
TW202123381A TW109134578A TW109134578A TW202123381A TW 202123381 A TW202123381 A TW 202123381A TW 109134578 A TW109134578 A TW 109134578A TW 109134578 A TW109134578 A TW 109134578A TW 202123381 A TW202123381 A TW 202123381A
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substrate
driver
support unit
axis
substrate support
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TW109134578A
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Chinese (zh)
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佛羅里安 海格曼
克勞斯 慕朵
安德烈思 馬克
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瑞士商艾維太克股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A substrate support unit comprising: a turntable (2) which is rotatable around a first axis (A1) and which is driven by a first drive (22), a plurality of substrate carrier units (3) which are arranged concentric to the first axis (A1) on the turntable (2), each comprising a substrate carrier (34) which is rotatable around a corresponding second axis (A2) and which is driven by a second drive (31), wherein all second axes (A2) are parallel to the first axis (A1).

Description

基板支撐單元、以及用於使用該單元沉積層體的設備及方法Substrate support unit, and equipment and method for depositing layer body using the unit

本發明係關於基板支撐單元及用於使用該支撐單元沉積薄膜的設備及方法，尤其是關於經構造成支撐複數個基板的基板支撐單元及用於使用該支撐單元沉積薄膜於基板上的方法。The present invention relates to a substrate support unit and an apparatus and method for depositing a thin film using the support unit, and more particularly to a substrate support unit configured to support a plurality of substrates and a method for depositing a thin film on a substrate using the support unit.

概言之，半導體裝置係透過各種處理如沉積處理、微影處理、蝕刻處理及清除處理等製造。在這些處理中，在基板上實行沉積處理以形成材料層體。沉積處理包含例如物理蒸氣沉積(PVD)處理、化學蒸氣沉積(CVD)處理、原子層沉積(ALD)處理等。In general, semiconductor devices are manufactured through various processes such as deposition, lithography, etching, and cleaning. In these processes, a deposition process is performed on the substrate to form a material layer body. The deposition treatment includes, for example, physical vapor deposition (PVD) treatment, chemical vapor deposition (CVD) treatment, atomic layer deposition (ALD) treatment, and the like.

例如美國專利第2012/0145080公開號揭示一種基板支撐單元，其具有轉動板及可轉動安裝於該轉動板上的複數個基板載體，其中單一驅動器驅動轉動板轉動及轉動板上的基板載體轉動。此概念複雜且因而涉及繁複維護。隨著所有基板載體彼此剛性耦合，調整個別基板載體極為複雜且耗時，尤其是當僅需置換一基板載體時。For example, US Patent No. 2012/0145080 discloses a substrate support unit, which has a rotating plate and a plurality of substrate carriers rotatably mounted on the rotating plate, wherein a single driver drives the rotating plate to rotate and the substrate carrier on the rotating plate to rotate. This concept is complicated and therefore involves complicated maintenance. As all substrate carriers are rigidly coupled to each other, adjusting individual substrate carriers is extremely complicated and time-consuming, especially when only one substrate carrier needs to be replaced.

因此，在本發明中的一待解決任務在於提供一台支撐體(table support)，允許簡易維護(亦即置換基板載體)且相對於各基板載體的定位更精確。Therefore, a task to be solved in the present invention is to provide a table support that allows easy maintenance (that is, replacement of the substrate carrier) and more precise positioning with respect to each substrate carrier.

此任務係由具有請求項1的特徵的基板支撐單元解決。基板支撐單元；利用該基板支撐單元沉積薄膜於基板上的設備與方法的另一實施例係由另一請求項的特徵界定。This task is solved by a substrate support unit having the features of claim 1. Substrate support unit; another embodiment of the apparatus and method for depositing a thin film on a substrate using the substrate support unit is defined by the characteristics of another claim.

依本發明的基板支撐單元包括一轉台，其可繞一第一軸線轉動且係由一第一驅動器驅動；複數個基板載體單元，其配置在該轉台上與該第一軸線同心，每一個基板載體單元包括一基板載體，其可繞一對應的第二軸線轉動且係由一第二驅動器驅動，其中所有的第二軸線與該第一軸線平行。The substrate support unit according to the present invention includes a turntable that can rotate around a first axis and is driven by a first driver; a plurality of substrate carrier units are arranged on the turntable and are concentric with the first axis, and each substrate The carrier unit includes a substrate carrier, which can rotate around a corresponding second axis and is driven by a second driver, wherein all the second axes are parallel to the first axis.

按此設計，每一基板載體可獨立於該轉台及彼此定向。此外，易於置換一基板載體單元且無需使被置換的基板載體的定向與其他基板載體的定向同步。因而減輕置換工作。待塗布的基板可直接放置於可轉動載體上。亦可將基板定位於中間載體上及將中間載體併同所安裝基板置放於可轉動載體上。According to this design, each substrate carrier can be independent of the turntable and oriented with each other. In addition, it is easy to replace one substrate carrier unit and there is no need to synchronize the orientation of the replaced substrate carrier with the orientation of other substrate carriers. Therefore, the replacement work is reduced. The substrate to be coated can be directly placed on the rotatable carrier. It is also possible to position the substrate on the intermediate carrier and place the intermediate carrier together with the mounted substrate on the rotatable carrier.

在一實施例中，第二驅動器適用於真空。此驅動器可安裝得更接近基板載體。因傳輸距離較短，可增加基板載體定位精確度。適用於真空的驅動器需要排氣處理且需要具較高的耐溫(higher temperature resistance)的組件。此外，若驅動器適用於真空，則無需自周遭至真空的複雜電力傳輸。In one embodiment, the second actuator is suitable for vacuum. This driver can be installed closer to the substrate carrier. Due to the short transmission distance, the positioning accuracy of the substrate carrier can be increased. Drivers suitable for vacuum require exhaust treatment and components with higher temperature resistance. In addition, if the driver is suitable for vacuum, there is no need for complicated power transmission from the surrounding to the vacuum.

在一實施例中，第一驅動器及/或第二驅動器係步進馬達(stepper motor)。或者，第一驅動器及/或第二驅動器可係伺服驅動器。若需定位判斷，則操作步進馬達所需電纜少於伺服驅動器。In one embodiment, the first driver and/or the second driver are stepper motors. Alternatively, the first driver and/or the second driver may be servo drivers. If positioning judgment is required, the cable required to operate the stepping motor is less than that of the servo drive.

在一實施例中，轉台包括一圓盤狀上台板，其具有用以收容一基板載體單元的複數個孔，其中所有的孔配置在一共同的直徑上而與第一軸線同心。按此設計，可配置基板載體單元於所有的孔中或可藉由一遮蓋封閉的一個以上孔中。孔可均勻或非均勻地繞著轉台的圓周分布。In one embodiment, the turntable includes a disc-shaped upper platen with a plurality of holes for receiving a substrate carrier unit, wherein all the holes are arranged on a common diameter and are concentric with the first axis. According to this design, the substrate carrier unit can be arranged in all the holes or in more than one hole that can be closed by a cover. The holes can be evenly or non-uniformly distributed around the circumference of the turntable.

在一實施例中，每一基板載體單元包括一殼體，其中收容有該第二驅動器且每一基板載體單元係藉由殼體配置於該轉台的該對應孔中。若需置換基板載體單元，易於併同殼體移除，減少停工期。In an embodiment, each substrate carrier unit includes a housing in which the second driver is accommodated and each substrate carrier unit is disposed in the corresponding hole of the turntable by the housing. If it is necessary to replace the substrate carrier unit, it is easy to remove it with the housing, reducing downtime.

在一實施例中，一安裝凸緣係沿著該第二軸線可滑動地配置在該第二驅動器的一第一軸上，其中該第一軸突出該殼體的一頂表面。可以此安裝凸緣調整基板載體的垂直位置。殼體的頂表面垂直於該第一軸延伸且基本上與該上台板的一頂表面齊平。In an embodiment, a mounting flange is slidably disposed on a first shaft of the second driver along the second axis, wherein the first shaft protrudes from a top surface of the housing. The vertical position of the substrate carrier can be adjusted by this mounting flange. The top surface of the casing extends perpendicular to the first axis and is substantially flush with a top surface of the upper platen.

在一實施例中，一絕緣體配置在該安裝凸緣與該基板載體之間。該絕緣體減少在安裝凸緣及連帶第二驅動器上的熱應力。In an embodiment, an insulator is disposed between the mounting flange and the substrate carrier. The insulator reduces the thermal stress on the mounting flange and the second driver.

在一實施例中，一位置偵測系統該第一軸的相對側配置在該第二驅動器上。一定位旗標配置於該第二驅動器的一第二軸上。該第二軸與該第一軸共線且在該第一軸的相對側離開該第二驅動器。該定位旗標係圓盤狀的，延伸超過該第二驅動器的寬度且包括至少一個開口，其延伸於該圓盤延伸超過該第二驅動器的該寬度的部分的圓周的一部分上。一反射體配置在與該第二驅動器相鄰的該基板載體單元的該殼體中，該反射體係配置成基本上垂直於該第一軸線與該對應的第二軸線的連接線，定向成平行於該第二軸線且面向該定位旗標。In one embodiment, a position detection system is disposed on the second driver on the opposite side of the first shaft. A positioning flag is arranged on a second shaft of the second driver. The second shaft is collinear with the first shaft and leaves the second driver on the opposite side of the first shaft. The positioning flag is disk-shaped, extends beyond the width of the second driver, and includes at least one opening that extends on a part of the circumference of the portion of the disk that extends beyond the width of the second driver. A reflector is arranged in the housing of the substrate carrier unit adjacent to the second driver, and the reflector system is arranged to be substantially perpendicular to the connecting line between the first axis and the corresponding second axis, and is oriented in parallel On the second axis and facing the positioning flag.

在一實施例中，一上遮板係圍繞該等基板載體配置，覆蓋該轉台的一頂表面，其中該上遮板的一頂表面基本上與該等基板載體的該頂表面齊平。該遮板具輕質設設，減少轉台上的熱負載且避免轉台在操作期間被塗布。該遮板易於置換且易於移除。In one embodiment, an upper shutter is arranged around the substrate carriers to cover a top surface of the turntable, wherein a top surface of the upper shutter is substantially flush with the top surface of the substrate carriers. The shutter has a lightweight design, reduces the heat load on the turntable and prevents the turntable from being coated during operation. The shutter is easy to replace and easy to remove.

在一實施例中，一下台板配置於該等第二驅動器下方，延伸於該轉台的整個圓周上。該下台板保護基板載體單元免受相對於上台板的側邊影響。In one embodiment, the lower platen is disposed under the second drivers and extends over the entire circumference of the turntable. The lower platen protects the substrate carrier unit from the side relative to the upper platen.

在一實施例中，一基板升降體配置於每一基板載體處。可將基板或基板併同中間載體自基板載體抬升或降至基板載體上。例如基板升降體包括銷，可利用銷直接升降機板或升降中間載體。藉由彼此平面獨立的三個銷，基板或中間載體始終穩定置於銷上。In one embodiment, a substrate lifting body is disposed at each substrate carrier. The substrate or the substrate and the intermediate carrier can be lifted or lowered from the substrate carrier to the substrate carrier. For example, the substrate lifting body includes pins, and the pins can be used to directly lift the board or lift the intermediate carrier. With three pins that are plane independent from each other, the substrate or intermediate carrier is always stably placed on the pins.

在一實施例中，一升降機於該轉台下方配置在一基板裝載位置處。該升降機經設計為能與位於該基板裝載位置中的每一基板升降體接合。藉此僅需一升降機(亦即致動器)即可升降所有基板。In one embodiment, an elevator is arranged at a substrate loading position under the turntable. The elevator is designed to be able to engage with each substrate lifting body located in the substrate loading position. In this way, only one elevator (that is, an actuator) can lift all the substrates.

或者，可使用裝載機器人取代基板升降體或升降機。裝載機器人可藉由執行水平與鉛直移動來轉移基板或具基板的中間載體至可轉動的基板載體處。水平移動可以是線性移動和/或樞轉移動。Alternatively, a loading robot can be used instead of the substrate lifting body or elevator. The loading robot can transfer the substrate or the intermediate carrier with the substrate to the rotatable substrate carrier by performing horizontal and vertical movement. The horizontal movement may be linear movement and/or pivotal movement.

在一實施例中，一雷射感測器於該轉台下方配置在該基板裝載位置處。該雷射基本上垂直於該第一軸線與該對應的第二軸線的連接線，且定向成平行於該第二軸線且面向該定位旗標。自該雷射感測器至該連接線的距離等於自該反射體至該連接線的距離。以此雷射感測器與反射體的配置，可達成在基板裝載位置中的基板載體的位置最高精確度。但亦可實現雷射感測器與反射體的其他位置。In one embodiment, a laser sensor is disposed at the substrate loading position under the turntable. The laser is substantially perpendicular to the connecting line of the first axis and the corresponding second axis, and is oriented parallel to the second axis and facing the positioning flag. The distance from the laser sensor to the connecting line is equal to the distance from the reflector to the connecting line. With this configuration of the laser sensor and the reflector, the highest accuracy of the position of the substrate carrier in the substrate loading position can be achieved. However, other positions of the laser sensor and reflector can also be realized.

在一實施例中，第二驅動器的至少兩者串聯電連接。藉此，可減少所需的電纜數。希望電纜數較少是因為所有纜線均需自旋轉中的轉台導引至靜止基座處。纜線數愈少，所需旋轉饋孔愈少。In an embodiment, at least two of the second drivers are electrically connected in series. In this way, the number of cables required can be reduced. It is desirable to have fewer cables because all cables need to be guided from the rotating turntable to the stationary base. The fewer the number of cables, the fewer the rotating feed holes required.

在一實施例中，基板支撐單元包括一控制單元，其配置於大氣(atmospheric)與靜止地點中，其中每一系列的第二驅動器藉由一真空饋孔與一旋轉饋孔連接至該控制單元。就緊密度而言，此設計對真空旋轉饋孔的強制要求較少。In one embodiment, the substrate support unit includes a control unit, which is disposed in an atmosphere and a stationary location, wherein each series of second drivers is connected to the control unit through a vacuum feed hole and a rotary feed hole . In terms of compactness, this design has fewer mandatory requirements for the vacuum rotary feed hole.

在一實施例中，每一第二驅動器包括一溫度感測器。每一系列的第二驅動器中的一個第二驅動器的該溫度感測器連接至該控制單元。類似地，可減少需通過旋轉饋孔的電纜數。例如若具有串聯電連接的2、3、4或5個第二驅動器，每一第二驅動器包括一溫度感測器，但這些溫度感測器中僅有一個連接至控制單元。In one embodiment, each second driver includes a temperature sensor. The temperature sensor of one second driver in each series of second drivers is connected to the control unit. Similarly, the number of cables that need to pass through the rotating feed hole can be reduced. For example, if there are 2, 3, 4, or 5 second drivers electrically connected in series, each second driver includes a temperature sensor, but only one of these temperature sensors is connected to the control unit.

上述基板支撐單元實施例的特徵除非互斥，否則均可任意組合使用。The features of the above embodiments of the substrate support unit can be used in any combination unless they are mutually exclusive.

一種依本發明的用於沉積一薄膜於一基板上之設備包括一處理室，在該處理室的一第一側上的至少一個源，及依據一前述實施例之一之基板支撐單元。基板支撐單元界定該處理室的一第二側，其與該處理室的第一側相對。基板支撐單元可界定下側邊且該源可配置於上側邊，反之亦然。還可能具有這樣的配置，其中轉台的軸水平定向，因而基板支撐單元界定處理室的一橫向側邊且該源界定一相對的橫向側邊。An apparatus for depositing a thin film on a substrate according to the present invention includes a processing chamber, at least one source on a first side of the processing chamber, and a substrate support unit according to one of the foregoing embodiments. The substrate support unit defines a second side of the processing chamber, which is opposite to the first side of the processing chamber. The substrate support unit can define the lower side and the source can be arranged on the upper side, and vice versa. It is also possible to have a configuration in which the axis of the turntable is oriented horizontally so that the substrate support unit defines a lateral side of the processing chamber and the source defines an opposite lateral side.

在一實施例中，設備包括一轉移模組，其配置於該基板支撐單元的該基板裝載位置處、及至少一個裝載模組，其於該基板支撐單元的該相對側上配置於該轉移模組處。亦可具有兩個以上裝載模組，其等彼此相鄰配置於基板支撐單元的相對側邊上。在一裝載模組中，可配置單一基板或一批基板，有無中間載體均可。轉移模組可將基板或中間載體併同所載基板自至少一個裝載模組轉移至基板裝載位置或直接進入處理室中。In one embodiment, the device includes a transfer module, which is disposed at the substrate loading position of the substrate support unit, and at least one loading module, which is disposed on the transfer mold on the opposite side of the substrate support unit. Group Office. There may also be more than two loading modules, which are arranged adjacent to each other on opposite sides of the substrate support unit. In a loading module, a single substrate or a batch of substrates can be configured, with or without intermediate carriers. The transfer module can transfer the substrate or the intermediate carrier together with the carried substrate from at least one loading module to the substrate loading position or directly into the processing chamber.

依本發明的一種用於沉積一薄膜於一基板上之處理包括以下步驟： 提供依據先前實施例之一之基板支撐單元； 提供具有至少一個源的一處理室於該處理室的一第一側上，其中該基板支撐單元界定該處理室的一第二側，其與該處理室的該第一側相對； 以第一驅動器將該等基板載體單元之一者配置於該基板裝載位置； 以該對應的第二驅動器定向在該基板裝載位置的該基板載體單元的該基板載體； 將一基板裝載於該基板載體； 在通過該至少一個源的影響區域時，轉動該第一驅動器，以便沉積一定向薄膜於被裝載的該基板上，或者 在通過該至少一個源的影響區域時，轉動該第一驅動器及該第二驅動器，以便沉積一非定向薄膜於被裝載的該基板上。A process for depositing a thin film on a substrate according to the present invention includes the following steps: Provide a substrate support unit according to one of the previous embodiments; Providing a processing chamber with at least one source on a first side of the processing chamber, wherein the substrate support unit defines a second side of the processing chamber opposite to the first side of the processing chamber; Arranging one of the substrate carrier units in the substrate loading position by the first driver; The substrate carrier of the substrate carrier unit oriented at the substrate loading position by the corresponding second driver; Loading a substrate on the substrate carrier; When passing through the affected area of the at least one source, rotate the first driver to deposit a directional thin film on the substrate to be loaded, or When passing through the affected area of the at least one source, the first driver and the second driver are rotated to deposit a non-directional film on the loaded substrate.

圖1顯示具有依本發明的基板支撐單元的用於沉積薄膜於基板上的設備的部分剖面圖及圖2顯示自圖1之轉台2上方所見透視圖。設備1包括殼體10，其至少於一上側邊上與橫向側邊上界定處理室。在所繪實施例中，轉台2至少部分配置於處理室11中。轉台2配置成緊密且可轉動地繞著殼體10中的第一軸線A1。可於處理室11中實現真空。轉台2的台軸21係以緊密軸承210安裝於殼體10上。轉台2進一步包括上台板20與下台板24，其中下台板24連接至台軸21且上台板20連接至下台板24。兩台板完全配置於處理室11內。上台板20與下台板24兩者係圓盤狀。上台板20放置於圓形壁240上，其基本上自下台板24的上表面垂直延伸的。密封墊241配置於圓形壁的上表面與上台板20的下表面間。在上台板20上，數個基板載體單元3分別均勻分布於其圓周或繞著第一軸線A1。各基板載體單元3包括至少一個基板驅動器31與一基板載體34。基板載體34配置於基板驅動器31上且可繞第二軸線A2轉動。在如同各基板載體單元3至第一軸線A1的相同橫向距離，用於塗布基板的至少一個源12配置於殼體10上，使得源12的一側邊面向基板載體34。基板載體單元3可在轉台2轉動時通過源12下方。在上台板20的上側邊上配置上遮板23，環繞基板載體34且完全遮蓋上台板20的上表面。由於基板載體34為圓形盤，故在上遮板23中的切口(cut-out)為對應的圓形。在各基板載體圓盤23的橫向側邊與對應切口之間具有小空隙。各基板載體單元3藉由電纜電連接至控制單元7。電纜穿過真空饋孔26與旋轉饋孔27，各基板載體單元3的真空饋孔26配置在圓形壁240中，隔離處理室11與周圍空氣。用於所有基板載體單元3的共用旋轉饋孔27配置於台軸21內部。轉台2可藉由接合台軸21的台驅動器22轉動。在裝載/卸載位置處配置基板升降體4與升降機5。基板升降體4包括配置於共用的銷保持器(pin holder)40上的銷4。在確切裝載位置中配置轉台2與基板載體單元3且定向使得栓40可穿過下台板24、上台板20與基板載體34中的對應穿孔且將基板自基板載體34抬升或下降至基板載體34上。可藉由轉移模組提供或卸載基板，示如圖6。為了分別判定轉台2的確切位置、其定位，在轉台2周圍設置台旗標(table flag)25。在圖2的實施例中，台   旗標25配置在下台板24上且橫向向外延伸到下台板24周圍上。台旗標25包括至少一槽，其併同光學感測器達成轉台2之定向的確切判定。FIG. 1 shows a partial cross-sectional view of an apparatus for depositing a thin film on a substrate with a substrate support unit according to the present invention, and FIG. 2 shows a perspective view from above the turntable 2 of FIG. 1. The device 1 includes a housing 10, which defines a processing chamber on at least one upper side and a lateral side. In the depicted embodiment, the turntable 2 is at least partially configured in the processing chamber 11. The turntable 2 is configured to tightly and rotatably surround the first axis A1 in the housing 10. A vacuum can be achieved in the processing chamber 11. The table shaft 21 of the turntable 2 is mounted on the housing 10 with a tight bearing 210. The turntable 2 further includes an upper platen 20 and a lower platen 24, wherein the lower platen 24 is connected to the table shaft 21 and the upper platen 20 is connected to the lower platen 24. The two plates are completely arranged in the processing chamber 11. Both the upper platen 20 and the lower platen 24 are disc-shaped. The upper platen 20 is placed on the circular wall 240, which extends substantially perpendicularly from the upper surface of the lower platen 24. The gasket 241 is arranged between the upper surface of the circular wall and the lower surface of the upper platen 20. On the upper platen 20, several substrate carrier units 3 are respectively evenly distributed on its circumference or around the first axis A1. Each substrate carrier unit 3 includes at least one substrate driver 31 and a substrate carrier 34. The substrate carrier 34 is disposed on the substrate driver 31 and can rotate around the second axis A2. At the same lateral distance as each substrate carrier unit 3 to the first axis A1, at least one source 12 for coating the substrate is arranged on the housing 10 such that one side of the source 12 faces the substrate carrier 34. The substrate carrier unit 3 can pass under the source 12 when the turntable 2 rotates. An upper shutter 23 is arranged on the upper side of the upper platen 20 to surround the substrate carrier 34 and completely cover the upper surface of the upper platen 20. Since the substrate carrier 34 is a circular disk, the cut-out in the upper shutter 23 is a corresponding circular shape. There is a small gap between the lateral side of each substrate carrier disc 23 and the corresponding cutout. Each substrate carrier unit 3 is electrically connected to the control unit 7 by a cable. The cable passes through the vacuum feed hole 26 and the rotary feed hole 27. The vacuum feed hole 26 of each substrate carrier unit 3 is arranged in the circular wall 240 to isolate the processing chamber 11 from the surrounding air. The common rotary feed hole 27 for all the substrate carrier units 3 is arranged inside the table shaft 21. The turntable 2 can be rotated by a table driver 22 that engages a table shaft 21. The substrate lift body 4 and the lifter 5 are arranged at the loading/unloading position. The substrate lifting body 4 includes pins 4 arranged on a common pin holder 40. The turntable 2 and the substrate carrier unit 3 are arranged in the exact loading position and are oriented so that the bolt 40 can pass through the corresponding perforations in the lower platen 24, the upper platen 20 and the substrate carrier 34 and lift or lower the substrate from the substrate carrier 34 to the substrate carrier 34 on. The substrate can be provided or unloaded by the transfer module, as shown in Figure 6. In order to determine the exact position and positioning of the turntable 2 respectively, a table flag 25 is set around the turntable 2. In the embodiment of FIG. 2, the platform flag 25 is arranged on the lower platform 24 and extends laterally outward to the periphery of the lower platform 24. The table flag 25 includes at least one slot, which, together with the optical sensor, achieves the exact determination of the orientation of the turntable 2.

圖3顯示圖1之基板載體單元3的剖面圖。基板載體單元3包括殼體30，其中配置有基板驅動器31。殼體30包括一凸緣，其配置於上台板20中的對應開口200中。凸緣上表面基本上與上台板20的上表面齊平。殼體30及因而基板驅動器31的定向使得第二轉軸A2垂直於上台板20延伸。基板驅動器31包括一第一軸310，其沿著第二軸線A2延伸於殼體30的上表面上。一安裝凸緣32配置在第一軸31上。該安裝凸緣32係圓盤狀且可沿第二軸線A2移動並可藉由固定手段(例如固定螺釘)固定於第一軸上。圓盤狀絕緣體33配置於安裝凸緣32上。基板載體34配置於絕緣體33上。絕緣體33係熱絕緣體，其包括具低導熱率的材料且因而減少在安裝凸緣32上的熱負載。在基板載體34的頂側邊上具有用以支撐基板或將基板保持在適當位置的***部(elevations)。該等***部可為點狀、線性或區域性。例如此等***部可為凸脊。周邊凸脊可避免在基板載體34上的基板橫移。基板驅動器31包括在其與第一軸310相對側邊上的第二軸311。第二軸311係可繞著第二軸線A2轉動。圓盤狀驅動器旗標35配置於第二軸311上。驅動器旗標35包括至少一槽，延伸於驅動器旗標35的周遭區域上。在該至少一槽的區域中，反射體36配置於殼體30上，驅動器旗標35面向基板載體34的側邊上。下台板24配置於驅動器旗標35下方。在下台板24中形成與反射體36對齊的穿孔。各基板載體單元3的反射體36配置使得在與第一軸線A1垂直的平面上，第一軸線A1與第二軸線A2間的連接線基本上和第二軸線A2與反射體36間的連接線垂直。FIG. 3 shows a cross-sectional view of the substrate carrier unit 3 of FIG. 1. The substrate carrier unit 3 includes a housing 30 in which a substrate driver 31 is arranged. The housing 30 includes a flange which is disposed in the corresponding opening 200 in the upper platen 20. The upper surface of the flange is substantially flush with the upper surface of the upper platen 20. The orientation of the housing 30 and thus the substrate driver 31 is such that the second rotation axis A2 extends perpendicular to the upper platen 20. The substrate driver 31 includes a first shaft 310 extending on the upper surface of the housing 30 along the second axis A2. A mounting flange 32 is arranged on the first shaft 31. The mounting flange 32 is disk-shaped and can move along the second axis A2 and can be fixed on the first shaft by a fixing means (for example, a fixing screw). The disc-shaped insulator 33 is arranged on the mounting flange 32. The substrate carrier 34 is disposed on the insulator 33. The insulator 33 is a thermal insulator, which includes a material with low thermal conductivity and thus reduces the thermal load on the mounting flange 32. There are elevations on the top side of the substrate carrier 34 for supporting the substrate or holding the substrate in place. The protuberances can be point-shaped, linear or regional. For example, these ridges may be ridges. The peripheral ridges can prevent the substrate on the substrate carrier 34 from moving laterally. The substrate driver 31 includes a second shaft 311 on the side opposite to the first shaft 310. The second shaft 311 is rotatable about the second axis A2. The disc-shaped driver flag 35 is disposed on the second shaft 311. The driver flag 35 includes at least one slot extending on the surrounding area of the driver flag 35. In the area of the at least one groove, the reflector 36 is disposed on the housing 30, and the driver flag 35 faces the side of the substrate carrier 34. The lower platen 24 is disposed under the driver flag 35. A perforation aligned with the reflector 36 is formed in the lower platen 24. The reflector 36 of each substrate carrier unit 3 is arranged such that on a plane perpendicular to the first axis A1, the connecting line between the first axis A1 and the second axis A2 is substantially the same as the connecting line between the second axis A2 and the reflector 36 vertical.

圖4顯示自圖1之設備1的裝載位置下方所見透視展開圖。一基板載體單元3與基板升降體4、升降機5和裝載位置的位置感測器6對齊。在抬升前，栓60的上緣位於轉台2的下台板24下方。用以固持所有的栓銷40的銷保持器41連接至起降機5，其在啟動時即可於鉛直方向抬升銷40且朝向基板載體單元3。位置感測器6可發射雷射束60，其在裝載位置中可穿過下台板24中的穿孔且根據驅動器旗標35中的槽位置，可達到基板載體單元3的反射體36。為了對齊特定基板載體單元3於裝載位置，轉台2可轉動直到該特定基板載體單元3位於裝載位置。此可藉由位置感測器併同台旗標25或藉由台驅動器22的編碼器達成。接著轉動基板載體34直到位置感測器6併同驅動器旗標36指示正確的基板載體34的定向。之後可啟動基板升降體4用於在個別載體34上裝載或卸載基板。Fig. 4 shows a perspective development view seen from below the loading position of the device 1 of Fig. 1. A substrate carrier unit 3 is aligned with the substrate lift body 4, the lifter 5 and the position sensor 6 of the loading position. Before lifting, the upper edge of the bolt 60 is located under the lower platen 24 of the turntable 2. The pin holder 41 for holding all the bolt pins 40 is connected to the hoisting machine 5, which can lift the pin 40 in the vertical direction and face the substrate carrier unit 3 when it is started. The position sensor 6 can emit a laser beam 60 that can pass through the perforation in the lower platen 24 in the loading position and can reach the reflector 36 of the substrate carrier unit 3 according to the slot position in the driver flag 35. In order to align the specific substrate carrier unit 3 at the loading position, the turntable 2 can be rotated until the specific substrate carrier unit 3 is located at the loading position. This can be achieved by using a position sensor in conjunction with the flag 25 or by the encoder of the driver 22. Then rotate the substrate carrier 34 until the position sensor 6 and the driver flag 36 indicate the correct orientation of the substrate carrier 34. The substrate lift body 4 can then be activated for loading or unloading substrates on individual carriers 34.

圖5顯示圖1之基板載體單元3的概略連接平面圖。在所繪實施例中，5個基板驅動器31一起聚集在一單元內。各驅動器31包括第一線圈、第二線圈及整合溫度感測器312。各驅動器藉由個別的真空饋孔26及共用旋轉饋孔27連接至控制單元7。第一線圈連接至輸入線3100與輸出線3102且第二線圈連接至輸入線3101與輸出線3103。由於驅動器31串聯，故後續驅動器的輸入線對應於先前驅動器的輸出線。當電力流經該等線時，所有驅動器彼此同步轉動。此外，線數減少為2輸入線與2輸出線。溫度感測器連接至輸入線3120與輸出線3121。對於各單元，僅一驅動器31的溫度感測器312連接至控制單元。因此，對於各單元，僅有關於驅動器的4電線與關於溫度感測器312的2電線需要通過旋轉饋孔27。FIG. 5 shows a schematic connection plan view of the substrate carrier unit 3 of FIG. 1. In the depicted embodiment, five substrate drivers 31 are gathered together in a unit. Each driver 31 includes a first coil, a second coil and an integrated temperature sensor 312. Each driver is connected to the control unit 7 through an individual vacuum feed hole 26 and a common rotary feed hole 27. The first coil is connected to the input line 3100 and the output line 3102 and the second coil is connected to the input line 3101 and the output line 3103. Since the drivers 31 are connected in series, the input line of the subsequent driver corresponds to the output line of the previous driver. When power flows through these lines, all drives rotate in synchronization with each other. In addition, the number of lines is reduced to 2 input lines and 2 output lines. The temperature sensor is connected to the input line 3120 and the output line 3121. For each unit, only one temperature sensor 312 of the driver 31 is connected to the control unit. Therefore, for each unit, only the 4 wires related to the driver and the 2 wires related to the temperature sensor 312 need to pass through the rotary feed hole 27.

圖6顯示自具有圖1之設備1的用於沉積薄膜於基板上的完整系統上方所見之透視圖。在設備1的頂側邊上，數個源12配置於周邊。相鄰於裝載位置配置轉移模組8。轉移模組8分別密封地連接至設備1，轉移模組8內部連接至設備1的處理室。轉移模組8包括一校準器80，用於在預定定向來定向待塗布的基板。相鄰於轉移模組8，在設備1的相對側邊上配置裝載模組9。裝載模組9密封地連接至轉移模組8。在所繪實施例中的裝載模組9包括兩個裝載站，可在該處裝載待塗布的基板，單一或成批均可。FIG. 6 shows a perspective view from above the complete system for depositing a thin film on a substrate with the apparatus 1 of FIG. 1. On the top side of the device 1, several sources 12 are arranged on the periphery. The transfer module 8 is arranged adjacent to the loading position. The transfer modules 8 are respectively connected to the equipment 1 in a sealed manner, and the transfer modules 8 are internally connected to the processing chamber of the equipment 1. The transfer module 8 includes an aligner 80 for orienting the substrate to be coated in a predetermined orientation. Adjacent to the transfer module 8, a loading module 9 is arranged on the opposite side of the device 1. The loading module 9 is hermetically connected to the transfer module 8. The loading module 9 in the depicted embodiment includes two loading stations, where the substrate to be coated can be loaded, either single or batch.

1:設備 2:轉台 3:基板載體單元 4:基板升降體 5:升降機 6:位置感測器 7:控制單元 8:轉移模組 9:裝載模組 10:殼體 11:處理室 12:源 20:上台板 21:台軸 22:台驅動器 23:上遮板 24:下台板 25:台旗標 26:真空饋孔 27:旋轉饋孔 30:殼體 31:基板驅動器 32:安裝凸緣 33:絕緣體 34:基板載體 35:驅動旗標 36:反射體 40:銷 41:銷保持器 60:雷射束 80:校準器 200:開口 201:遮蓋 210:軸承 240:圓形壁 241:密封墊 310:第一軸 311:第二軸 312:溫度感測器 3100:第一供應線 3101:第二供應線 3102:第一返還線 3103:第二返還線 3120:供應線 3121:返還線 A1:第一軸線 A2:第二軸線1: equipment 2: turntable 3: Substrate carrier unit 4: substrate lifting body 5: Lift 6: Position sensor 7: Control unit 8: Transfer module 9: Load the module 10: Shell 11: Processing room 12: source 20: upper plate 21: axis 22: drives 23: Upper shutter 24: Lower plate 25: Taiwan flag 26: Vacuum feed hole 27: Rotating feed hole 30: shell 31: Substrate driver 32: mounting flange 33: Insulator 34: Substrate carrier 35: drive flag 36: reflector 40: pin 41: Pin retainer 60: Laser beam 80: Calibrator 200: opening 201: Cover 210: Bearing 240: round wall 241: gasket 310: first axis 311: second axis 312: temperature sensor 3100: The first supply line 3101: The second supply line 3102: The first return line 3103: second return line 3120: supply line 3121: return line A1: The first axis A2: second axis

以下參考圖式詳述本發明的實施例。這些圖式僅供闡釋之用而無限制之意。其中顯示 圖1係具有依本發明的基板支撐單元的用於沉積薄膜於基板上的設備的部分剖面圖； 圖2係自圖1的轉台(turntable)上方所見透視圖； 圖3係圖1之基板載體單元的剖面圖； 圖4係自圖1之設備的裝載位置下方所見透視展開圖； 圖5係圖1之基板載體單元的概略連接平面圖；及 圖6係自具有圖1之設備的用於沉積薄膜於基板上的完整系統上方所見透視圖。The embodiments of the present invention will be described in detail below with reference to the drawings. These diagrams are for explanatory purposes only and are not meant to be limiting. Which shows 1 is a partial cross-sectional view of an apparatus for depositing a thin film on a substrate with a substrate supporting unit according to the present invention; Figure 2 is a perspective view from the top of the turntable in Figure 1; FIG. 3 is a cross-sectional view of the substrate carrier unit of FIG. 1; Figure 4 is a perspective exploded view seen from below the loading position of the equipment of Figure 1; Fig. 5 is a schematic connection plan view of the substrate carrier unit of Fig. 1; and FIG. 6 is a perspective view from above of a complete system for depositing thin films on a substrate with the equipment of FIG. 1. FIG.

1:設備 1: equipment

2:轉台 2: turntable

3:基板載體單元 3: Substrate carrier unit

4:基板升降體 4: substrate lifting body

5:升降機 5: Lift

7:控制單元 7: Control unit

10:殼體 10: Shell

11:處理室 11: Processing room

12:源 12: source

20:上台板 20: upper plate

21:台軸 21: axis

22:台驅動器 22: drives

23:上遮板 23: Upper shutter

24:下台板 24: Lower plate

26:真空饋孔 26: Vacuum feed hole

27:旋轉饋孔 27: Rotating feed hole

31:基板驅動器 31: Substrate driver

34:基板載體 34: Substrate carrier

40:銷 40: pin

41:銷保持器 41: Pin retainer

210:軸承 210: Bearing

240:圓形壁 240: round wall

241:密封墊 241: gasket

A1:第一軸線 A1: The first axis

A2:第二軸線 A2: second axis

Claims (19)

一種基板支撐單元，其包括： 一轉台(2)，其可繞一第一軸線(A1)轉動且係由一第一驅動器(22)驅動； 複數個基板載體單元(3)，其配置在該轉台(2)上與該第一軸線(A1)同心，每一個基板載體單元包括一基板載體(34)，其可繞一對應的第二軸線(A2)轉動且係由一第二驅動器(31)驅動， 其中所有的第二軸線(A2)與該第一軸線(A1)平行。A substrate support unit, which includes: A turntable (2), which can rotate around a first axis (A1) and is driven by a first driver (22); A plurality of substrate carrier units (3) are arranged on the turntable (2) concentric with the first axis (A1), and each substrate carrier unit includes a substrate carrier (34), which can be around a corresponding second axis (A2) rotates and is driven by a second driver (31), All the second axes (A2) are parallel to the first axis (A1). 如請求項1之基板支撐單元，其中該第二驅動器(31)適用於真空。Such as the substrate support unit of claim 1, wherein the second driver (31) is suitable for vacuum. 如請求項1或2之基板支撐單元，其中該第一驅動器(22)及/或該第二驅動器(31)係一步進馬達。Such as the substrate support unit of claim 1 or 2, wherein the first driver (22) and/or the second driver (31) is a stepping motor. 如請求項1至3中任一項之基板支撐單元，其中該轉台(2)包括一圓盤狀上台板(20)，其具有用以收容一個基板載體單元(3)的複數個孔(200)，其中所有的孔(200)配置在一共同的直徑上而與該第一軸線(A1)同心。Such as the substrate support unit of any one of claims 1 to 3, wherein the turntable (2) includes a disc-shaped upper platen (20) with a plurality of holes (200) for accommodating a substrate carrier unit (3) ), wherein all the holes (200) are arranged on a common diameter and are concentric with the first axis (A1). 如請求項4之基板支撐單元，其中每一基板載體單元(3)包括一殼體(30)，其中收容有該第二驅動器(31)且每一基板載體單元(3)係藉由該殼體(30)配置於該轉台(2)的該對應孔(200)中。For example, the substrate support unit of claim 4, wherein each substrate carrier unit (3) includes a housing (30) in which the second driver (31) is accommodated and each substrate carrier unit (3) is supported by the housing The body (30) is arranged in the corresponding hole (200) of the turntable (2). 如請求項5之基板支撐單元，其中一安裝凸緣(32)係沿著該第二軸線(A2)可滑動地配置在該第二驅動器(31)的一第一軸(310)上，其中該第一軸(310)突出該殼體(30)的一頂表面，其中該殼體(30)的該頂表面垂直於該第一軸(310)延伸且基本上與該上台板(20)的一頂表面齊平。Such as the substrate support unit of claim 5, wherein a mounting flange (32) is slidably arranged on a first shaft (310) of the second driver (31) along the second axis (A2), wherein The first shaft (310) protrudes from a top surface of the casing (30), wherein the top surface of the casing (30) extends perpendicular to the first shaft (310) and is substantially aligned with the upper platen (20) One top surface is flush. 如請求項6之基板支撐單元，其中一絕緣體(33)配置在該安裝凸緣(32)與該基板載體(34)之間。Such as the substrate support unit of claim 6, wherein an insulator (33) is disposed between the mounting flange (32) and the substrate carrier (34). 如請求項6或7之基板支撐單元，其中一位置偵測系統(35, 36)係於該第一軸(310)的相對側配置在該第二驅動器(31)上，其中一定位旗標(35)配置於該第二驅動器(31)的一第二軸(311)上，其中該第二軸(311)與該第一軸(310)共線且在該第一軸(310)的相對側離開該第二驅動器(31)，其中該定位旗標(35)係圓盤狀的，延伸超過該第二驅動器(31)的寬度且包括至少一個開口，其延伸於該圓盤延伸超過該第二驅動器(31)的該寬度的部分的圓周的一部分上，及其中一反射體(36)配置在與該第二驅動器(31)相鄰的該基板載體單元(3)的該殼體(30)中，該反射體(36)係配置成基本上垂直於該第一軸線(A1)與該對應的第二軸線(A2)的連接線，定向成平行於該第二軸線(A2)且面向該定位旗標(35)。For example, the substrate support unit of claim 6 or 7, one of the position detection systems (35, 36) is arranged on the second driver (31) on the opposite side of the first shaft (310), and one of the positioning flags (35) is arranged on a second shaft (311) of the second driver (31), wherein the second shaft (311) is collinear with the first shaft (310) and is at the center of the first shaft (310) The opposite side leaves the second driver (31), wherein the positioning flag (35) is disc-shaped, extends beyond the width of the second driver (31) and includes at least one opening, which extends beyond the disc On a part of the circumference of the width portion of the second driver (31), and a reflector (36) is disposed on the housing of the substrate carrier unit (3) adjacent to the second driver (31) In (30), the reflector (36) is configured to be substantially perpendicular to the connecting line of the first axis (A1) and the corresponding second axis (A2), and is oriented parallel to the second axis (A2) And face the positioning flag (35). 如請求項1至8中任一項之基板支撐單元，其中一上遮板(23)係圍繞該等基板載體(34)配置，覆蓋該轉台(2)的一頂表面，其中該上遮板(23)的一頂表面基本上與該等基板載體(34)的該頂表面齊平。For example, the substrate support unit of any one of claims 1 to 8, wherein an upper shutter (23) is arranged around the substrate carriers (34) and covers a top surface of the turntable (2), wherein the upper shutter A top surface of (23) is substantially flush with the top surface of the substrate carriers (34). 如請求項1至9中任一項之基板支撐單元，其中一下台板(24)配置於該等第二驅動器(31)下方，延伸於該轉台(2)的整個圓周。Such as the substrate support unit of any one of claims 1 to 9, wherein the lower platen (24) is arranged under the second drivers (31) and extends over the entire circumference of the turntable (2). 如請求項1至10中任一項之基板支撐單元，其中一基板升降體(4)配置於每一基板載體(34)處。Such as the substrate supporting unit of any one of claims 1 to 10, wherein a substrate lifting body (4) is arranged at each substrate carrier (34). 如請求項11之基板支撐單元，其中一升降機(5)於該轉台(2)下方配置在一基板裝載位置處，該升降機(5)經設計為能與位於該基板裝載位置中的每一基板升降體(4)接合。For example, in the substrate support unit of claim 11, one of the elevators (5) is arranged at a substrate loading position under the turntable (2), and the elevator (5) is designed to be able to interact with each substrate in the substrate loading position. The lifting body (4) is engaged. 如請求項8至12中任一項之基板支撐單元，其中一雷射感測器(6)於該轉台(2)下方配置在該基板裝載位置處，基本上垂直於該第一軸線(A1)與該對應的第二軸線(A2)的連接線，且定向成平行於該第二軸線(A2)且面向該定位旗標(35)，其中自該雷射感測器至該連接線的距離等於自該反射體(36)至該連接線的距離。Such as the substrate support unit of any one of claims 8 to 12, wherein a laser sensor (6) is arranged at the substrate loading position under the turntable (2), substantially perpendicular to the first axis (A1) ) A connecting line with the corresponding second axis (A2) and oriented parallel to the second axis (A2) and facing the positioning flag (35), wherein the line from the laser sensor to the connecting line The distance is equal to the distance from the reflector (36) to the connecting line. 如請求項1至13中任一項之基板支撐單元，其中該等第二驅動器(31)的至少兩者串聯電連接。According to the substrate support unit of any one of claims 1 to 13, wherein at least two of the second drivers (31) are electrically connected in series. 如請求項14之基板支撐單元，其包括一控制單元(7)，其配置於大氣與靜止地點中，其中每一系列的第二驅動器(31)藉由一真空饋孔(26)與一旋轉饋孔(27)連接至該控制單元(7)。For example, the substrate support unit of claim 14, which includes a control unit (7), which is arranged in the atmosphere and a static place, wherein each series of second actuators (31) use a vacuum feed hole (26) and a rotating The feed hole (27) is connected to the control unit (7). 如請求項14或15之基板支撐單元，其中每一第二驅動器(31)包括一溫度感測器(312)且其中每一系列的第二驅動器(31)中的一個第二驅動器(31)的該溫度感測器(312)連接至該控制單元(7)。Such as the substrate support unit of claim 14 or 15, wherein each second driver (31) includes a temperature sensor (312) and one second driver (31) in each series of second drivers (31) The temperature sensor (312) is connected to the control unit (7). 一種用於沉積一薄膜於一基板上之設備(1)，其包括： 一處理室(11)， 在該處理室(11)的一第一側上的至少一個源(12)，及 如請求項1至16中任一項之基板支撐單元， 其中該基板支撐單元界定該處理室(11)的一第二側，其與該處理室(11)的第一側相對。A device (1) for depositing a thin film on a substrate, comprising: A processing room (11), At least one source (12) on a first side of the processing chamber (11), and Such as the substrate support unit of any one of claims 1 to 16, The substrate supporting unit defines a second side of the processing chamber (11), which is opposite to the first side of the processing chamber (11). 如請求項17之設備，其包括： 一轉移模組(8)，其配置於該基板支撐單元的該基板裝載位置處，及 至少一個裝載模組(9)，其係於該基板支撐單元的該相對側上配置於該轉移模組(8)處。Such as the equipment of claim 17, which includes: A transfer module (8) arranged at the substrate loading position of the substrate support unit, and At least one loading module (9) is arranged at the transfer module (8) on the opposite side of the substrate supporting unit. 一種用於沉積一薄膜於一基板上之處理，其包括以下步驟： 提供如請求項1至16中任一項之基板支撐單元； 提供具有至少一個源(12)的一處理室(11)於該處理室(11)的一第一側上，其中該基板支撐單元界定該處理室(11)的一第二側，其與該處理室(11)的該第一側相對； 以該第一驅動器(22)將該等基板載體單元(3)之一者配置於該基板裝載位置； 以該對應的第二驅動器(31)定向在該基板裝載位置的該基板載體單元(3)的該基板載體(34)； 將一基板裝載於該基板載體(34)； 在通過該至少一個源(12)的影響區域時，轉動該第一驅動器(22)，以便沉積一定向薄膜於被裝載的該基板上，或者 在通過該至少一個源(12)的影響區域時，轉動該第一驅動器(22)及該第二驅動器(31)，以便沉積一非定向薄膜於被裝載的該基板上。A process for depositing a thin film on a substrate, which includes the following steps: Provide a substrate support unit as claimed in any one of claims 1 to 16; A processing chamber (11) with at least one source (12) is provided on a first side of the processing chamber (11), wherein the substrate support unit defines a second side of the processing chamber (11), which is connected to the The first side of the processing chamber (11) is opposite; Arranging one of the substrate carrier units (3) at the substrate loading position by the first driver (22); The substrate carrier (34) of the substrate carrier unit (3) oriented at the substrate loading position by the corresponding second driver (31); Loading a substrate on the substrate carrier (34); When passing through the affected area of the at least one source (12), rotate the first driver (22) to deposit a directional film on the substrate to be loaded, or When passing through the affected area of the at least one source (12), the first driver (22) and the second driver (31) are rotated so as to deposit a non-directional film on the loaded substrate.
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