TW202118992A

TW202118992A - X-ray reflectometry and method thereof for measuring three dimensional nanostructures on flat substrate

Info

Publication number: TW202118992A
Application number: TW109123688A
Authority: TW
Inventors: 劉軍廷; 吳文立; 何柏青; 陳國棟; 吳昇勳; 傅尉恩
Original assignee: 財團法人工業技術研究院
Priority date: 2019-10-14
Filing date: 2020-07-14
Publication date: 2021-05-16
Also published as: TWI753490B

Abstract

This invention relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this invention is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode or 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR measurements of samples with limited sample area and scattering volumes.

Description

用於檢測平面基板上之三維奈米結構的X光反射儀與其方法X-ray reflectometer and method for detecting three-dimensional nanostructure on plane substrate

本發明是有關於一種檢測裝置，且特別是有關於一種用於檢測平面基板上之三維奈米結構的X光反射儀（X-ray reflectometry, XRR）與其方法。The present invention relates to a detection device, and in particular to an X-ray reflectometry (XRR) and its method for detecting three-dimensional nanostructures on a flat substrate.

X射線反射儀是一可透過電子密度進行深度分析單層和多層奈米樣品之方法，並可研究表面和介面，包括其粗糙度、介面層之擴散以及單層和多層膜的厚度。另外，文獻指出X射線反射儀能夠檢測表面圖案之橫截面輪廓，例如，奈米壓印（nanoimprint）製造的週期性光柵橫截面。以上X射線反射儀應用於表面圖案之橫截面輪廓為基於有效介質近似（effective medium approximation, EMA）法。EMA之等效概念已用於橢圓偏振或散射的多孔材料，用以估計有效折射率。 EMA對奈米結構的有效性取決於入射X射線的干涉長度（coherence length）；當干涉長度大於奈米結構沿檢測方向的橫向特徵長度時，EMA才變得適用。在此種情況下，可以從X射線反射儀結果推論出在任何給定樣品深度之結構空間比。當入射X射線沿檢測方向具有足夠的有效干涉長度時，X射線反射儀可以用於測量膜厚以及光柵陣列的橫截面形狀。在X射線反射儀之鏡面幾何中，沿y軸的有效干涉長度為微米單位，沿x軸的有效干涉長度為奈米單位。對於光柵而言，沿x軸的結構變化很小，幾乎沒有變化，但並不適於3D奈米結構；本案之3D奈米結構樣品，不存在最佳的方位角方向。因此，除了在平面基板上奈米結構的X射線反射儀測量的橫向干涉長度方面的挑戰外，還存在使用較寬的狹縫寬度設計聚光X射線，將散射光以及非鏡面（off-specular）反射光集中到目標樣品。非鏡面反射強度在高qz區域可以達到相當的強度，可用以量測具有顯著橫向結構（如本文所述的3D奈米結構）的樣品。X-ray reflectometer is a method that can deeply analyze single-layer and multi-layer nano samples through electron density, and can study the surface and interface, including its roughness, the diffusion of the interface layer, and the thickness of single-layer and multi-layer films. In addition, the literature points out that X-ray reflectometers can detect the cross-sectional profile of surface patterns, for example, the cross-section of periodic gratings manufactured by nanoimprint. The cross-sectional profile of the above X-ray reflectometer applied to the surface pattern is based on the effective medium approximation (EMA) method. The equivalent concept of EMA has been used in elliptically polarized or scattered porous materials to estimate the effective refractive index. The effectiveness of EMA for nanostructures depends on the coherence length of incident X-rays; when the interference length is greater than the lateral characteristic length of the nanostructure along the detection direction, EMA becomes applicable. In this case, the structure space ratio at any given sample depth can be inferred from the X-ray reflectometer results. When the incident X-ray has a sufficient effective interference length along the detection direction, the X-ray reflectometer can be used to measure the film thickness and the cross-sectional shape of the grating array. In the mirror geometry of the X-ray reflectometer, the effective interference length along the y-axis is in micrometers, and the effective interference length along the x-axis is in nanometers. For the grating, the structural change along the x-axis is very small and almost unchanged, but it is not suitable for 3D nanostructures; the 3D nanostructure sample in this case does not have the best azimuth direction. Therefore, in addition to the challenge of measuring the lateral interference length of a nanostructured X-ray reflectometer on a flat substrate, there are also the use of a wider slit width to design the condensing X-rays, which will reduce the scattered light and the off-specular (off-specular surface). ) The reflected light is concentrated on the target sample. The intensity of non-specular reflection can reach considerable intensity in the high qz region, and can be used to measure samples with significant lateral structure (such as the 3D nanostructure described in this article).

NOVA在2018年之發明專利（US 2018/10119925 B2）為使用錐形光源，其散射張角為20至40度，其光源不同於本申請中所使用之光源。此發明專利中的聚焦光束在z方向上受到狹縫限制，使得散射張角小於或等於1度；在x方向上，張角為15到25度，故在該方向上可得到多角度之散射圖。在散射圖上之每個角度執行切線計算 (line cut)，以獲得鏡面反射之強度值。然後，將張角範圍內之光強度全部積分以獲得入射角θ的反射訊號。NOVA所開發的方法只能在整個2D檢測器屏幕上獲得2D散射圖案，許多非鏡面反射訊號會在屏幕上重疊，很難分析和區分。NOVA嘗試提出的一種解決方案是使用不同的方位角來分離混雜的多角度散射圖案。但是，仍缺乏獲得每個xyz方向上的光強度訊號的結果和實用方法，這使得無法分析複雜的3D結構。在NOVA發明專利中，無法根據不同的入射角來分析樣品在z方向上之深度值。NOVA's invention patent in 2018 (US 2018/10119925 B2) uses a conical light source with a scattering angle of 20 to 40 degrees, and its light source is different from the light source used in this application. The focused beam in this invention patent is limited by the slit in the z direction, so that the scattering angle is less than or equal to 1 degree; in the x direction, the angle is 15 to 25 degrees, so a multi-angle scattering pattern can be obtained in this direction. Perform a line cut at each angle on the scatter map to obtain the intensity value of the specular reflection. Then, the light intensity within the range of the opening angle is all integrated to obtain the reflection signal at the incident angle θ. The method developed by NOVA can only obtain 2D scattering patterns on the entire 2D detector screen. Many non-specular reflection signals will overlap on the screen, which is difficult to analyze and distinguish. One solution NOVA tried to propose was to use different azimuths to separate mixed multi-angle scattering patterns. However, there is still a lack of results and practical methods for obtaining light intensity signals in each xyz direction, which makes it impossible to analyze complex 3D structures. In the NOVA invention patent, the depth value of the sample in the z direction cannot be analyzed according to different incident angles.

KLA在2019年發布的專利（US 2019/0017946 A1）提出可使用不同的聚焦光學元件產生具有不同波長的聚焦光束，例如，在聚焦光學透鏡上使用多層塗層將不同波長聚焦在樣品上。但是，聚焦光束仍將同時在xyz方向上遇到多重散射，使得無法進行精確分析和區別。在KLA專利中也沒有描述如何精確地將不同波長照射到樣品上。反之，在前案專利發明（US 2016/0341674 A1）中描述的長波長光源可以通過單分光器（monochomator）和在z方向上的狹縫有效地聚焦於樣品上。The patent issued by KLA in 2019 (US 2019/0017946 A1) proposes that different focusing optical elements can be used to generate focused beams with different wavelengths. For example, a multi-layer coating is used on a focusing optical lens to focus different wavelengths on the sample. However, the focused beam will still encounter multiple scattering in the xyz direction at the same time, making accurate analysis and distinction impossible. The KLA patent also does not describe how to accurately irradiate different wavelengths onto the sample. Conversely, the long-wavelength light source described in the previous patent invention (US 2016/0341674 A1) can be effectively focused on the sample through a monochomator and a slit in the z direction.

此外，KLA專利提到響應函數模型可用於計算和擬合3D結構。但是，由於3D圖案的散射圖案極其複雜，因此在此之前難以構建3D模型。In addition, the KLA patent mentions that the response function model can be used to calculate and fit 3D structures. However, since the scattering pattern of the 3D pattern is extremely complicated, it is difficult to construct a 3D model before this.

根據本發明之一實施例，提出一種用於檢測平面基板上之三維奈米結構的X射線反射儀，包括X射線光源、X射線反射器、一入射狹縫以及X射線偵測器。X射線光源用以發出光波長大於0.154奈米之X射線。X射線反射器用於將一扇形X射線聚焦於一樣品的一表面。此入射狹縫位在X射線反射器和樣品之間，此入射狹縫的寬度比其開口大10倍或更大，且其寬度垂直於X射線的反射平面。X射線偵測器具有良好像素解析度，用於收集樣品的表面反射之扇形X射線。其中，扇形X射線具有在預定範圍內可調節之一入射角，扇形X射線的入射張角通過此組狹縫的開口大小來控制，扇形X射線的一發散張角通過此組狹縫的寬度來控制，其中，在X射線偵測器上收集的扇形X射線的每個方位角中，計算非鏡面反射值，並將非鏡面反射值從反射X射線強度中去除。According to an embodiment of the present invention, an X-ray reflectometer for detecting three-dimensional nanostructures on a flat substrate is provided, which includes an X-ray light source, an X-ray reflector, an incident slit, and an X-ray detector. The X-ray light source is used to emit X-rays with a light wavelength greater than 0.154 nanometers. The X-ray reflector is used to focus a fan-shaped X-ray on a surface of a sample. The entrance slit is located between the X-ray reflector and the sample, and the width of the entrance slit is 10 times or more larger than its opening, and its width is perpendicular to the X-ray reflection plane. The X-ray detector has good pixel resolution and is used to collect fan-shaped X-rays reflected on the surface of the sample. Among them, the fan X-ray has an angle of incidence that can be adjusted within a predetermined range, the incidence angle of the fan X-ray is controlled by the opening size of the group of slits, and a divergence angle of the fan X-ray is controlled by the width of the group of slits , Where, in each azimuth angle of the fan-shaped X-rays collected on the X-ray detector, the non-specular reflection value is calculated, and the non-specular reflection value is removed from the reflected X-ray intensity.

根據本發明之一實施例，提出一種用於X射線反射儀（XRR）的方法，用以檢測平面基板上之三維奈米結構，包括下列步驟。將一扇形X射線點聚焦到一樣品的一表面上，其中，扇形X射線的入射角在預設的角度範圍內可調整，並且扇形X射線的光波長大於0.154奈米。當入射角改變時，根據入射角調整扇形X射線的入射張角，其中扇形X射線的入射張角通過一入射狹縫的開口大小來控制。通過此入射狹縫的寬度來調節扇形X射線的一發散張角。使用一X射線偵測器收集扇形反射之X射線。在X射線偵測器上收集的扇形X射線的每個方位角中，計算非鏡面反射值，並將非鏡面反射值從反射X射線強度中去除。在每個方位角中剩餘的反射X射線強度的鏡面反射分量，將其積分以獲得每個入射角之鏡面反射強度。在預定的入射角範圍內，收集鏡面反射強度與入射光束的總強度之比，用以分析樣品之表面結構訊息。According to an embodiment of the present invention, a method for X-ray reflectometer (XRR) is provided for detecting three-dimensional nanostructures on a planar substrate, including the following steps. Focusing a fan-shaped X-ray spot on a surface of a sample, wherein the incident angle of the fan-shaped X-ray is adjustable within a preset angle range, and the light wavelength of the fan-shaped X-ray is greater than 0.154 nm. When the incident angle is changed, the incident opening angle of the fan-shaped X-ray is adjusted according to the incident angle, wherein the incident opening angle of the fan-shaped X-ray is controlled by the opening size of an incident slit. The divergence angle of the fan-shaped X-ray is adjusted by the width of the incident slit. An X-ray detector is used to collect fan-shaped X-rays. In each azimuth angle of the fan-shaped X-rays collected on the X-ray detector, the non-specular reflection value is calculated, and the non-specular reflection value is removed from the reflected X-ray intensity. The specular reflection component of the remaining reflected X-ray intensity in each azimuth angle is integrated to obtain the specular reflection intensity for each incident angle. Within a predetermined range of incident angle, the ratio of the intensity of the specular reflection to the total intensity of the incident beam is collected to analyze the surface structure information of the sample.

根據本發明之一實施例，提出一種用於X射線反射儀（XRR）的方法，用以檢測平面基板上之三維奈米結構，包括下列步驟。使用一X射線偵測器收集鏡面反射和非鏡面反射的一扇形X射線。在X射線偵測器上收集的扇形X射線的每個方位角中，計算非鏡面反射值，並將非鏡面反射值從反射X射線強度中去除。According to an embodiment of the present invention, a method for X-ray reflectometer (XRR) is provided for detecting three-dimensional nanostructures on a planar substrate, including the following steps. An X-ray detector is used to collect specular and non-specular X-rays. In each azimuth angle of the fan-shaped X-rays collected on the X-ray detector, the non-specular reflection value is calculated, and the non-specular reflection value is removed from the reflected X-ray intensity.

為了對本發明之上述及其他方面有更佳的瞭解，下文特舉實施例，並配合所附圖式詳細說明如下：In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are given in conjunction with the accompanying drawings to describe in detail as follows:

以下係提出實施例進行詳細說明，實施例僅用以作為範例說明，並非用以限縮本發明欲保護之範圍。以下是以相同/類似的符號表示相同/類似的元件做說明。以下實施例中所提到的方向用語，例如：上、下、左、右、前或後等，僅是參考所附圖式的方向。因此，使用的方向用語是用來說明並非用來限制本發明。The following examples are provided for detailed description. The examples are only used as examples for description, and are not intended to limit the scope of the present invention to be protected. In the following description, the same/similar symbols represent the same/similar elements. The directional terms mentioned in the following embodiments, for example: up, down, left, right, front or back, etc., are only the directions with reference to the accompanying drawings. Therefore, the directional terms used are used to illustrate but not to limit the present invention.

本發明係關於如何檢測平面基板上的3D奈米結構特徵。更具體來說，本發明之X射線反射儀適用於具有複雜3D結構並且具有有限的厚度或高度（奈米級）並且同時具有有限的樣品檢測面積。在前案發明專利中（US 2016/0341674 A1），針對微小樣品體積、厚度和面積的樣品，使用聚光的光源和光路來提高入射光通量，從而提高反射訊號的強度，同時就散射向量Qz而言，維持了理想的解析度，其Qz定義為（4π/λ）sinθ； λ代表X射線的波長，θ代表樣品表面和入射X射線之間的入射角。由於前案專利僅涉及鏡面反射（specular reflection），因此入射角θ也是相對於樣品表面的偵測角度。在此前案發明專利中，長波長X射線以嚴格控制的張角δθ聚焦於目標樣品上，同時保持方位角方向之最大張角，以允許足夠的X射線光通量打到樣品。本發明的目的是擴展上述X射線反射儀以測量在平面基板上的3D奈米結構。The present invention relates to how to detect 3D nanostructure features on a planar substrate. More specifically, the X-ray reflectometer of the present invention is suitable for complex 3D structures with limited thickness or height (nano-level) and at the same time a limited sample detection area. In the previous invention patent (US 2016/0341674 A1), for samples with a small sample volume, thickness and area, a condensed light source and optical path are used to increase the incident luminous flux, thereby increasing the intensity of the reflected signal, and at the same time, the scattering vector Qz is improved. In other words, the ideal resolution is maintained, and its Qz is defined as (4π/λ)sinθ; λ represents the wavelength of the X-ray, and θ represents the incident angle between the sample surface and the incident X-ray. Since the previous patent only relates to specular reflection, the incident angle θ is also the detection angle relative to the sample surface. In the previous invention patent, long-wavelength X-rays are focused on the target sample with a strictly controlled opening angle δθ while maintaining the maximum opening angle in the azimuth direction to allow sufficient X-ray flux to hit the sample. The purpose of the present invention is to extend the above-mentioned X-ray reflectometer to measure 3D nanostructures on a flat substrate.

本案使用2D偵測器收集X射線反射儀之鏡面反射和非鏡面反射或散射的X射線，非鏡面反射或散射來自於有限的干涉長度 (coherence length) 和複雜之3D奈米結構造成的有限橫向散射量Qx和Qy，將以上積分去除則可獲得鏡面反射強度。In this case, a 2D detector is used to collect the specular reflection and non-specular reflection or scattering of X-rays from the X-ray reflectometer. The non-specular reflection or scattering comes from the limited interference length (coherence length) and the limited lateral direction caused by the complex 3D nanostructure. Scattering quantities Qx and Qy, the above integration can be removed to obtain the specular reflection intensity.

X射線反射儀用於奈米結構表面分析時，重要可用的訊息皆沿著樣本厚度方向（相對於樣本表面給定的z軸）。X射線反射儀推導出的結構結果為在一特定深度，從干涉長度上之橫向平均值得出的結果。為了從X射線反射儀獲得精確奈米結構的3D長度，需要附加外部特徵長度，從法向入射之穿透式小角度X射線散射（transmission small-angle X-ray scattering, tSAXS）可獲得相關特徵值。故在本文內的分析過程可將tSAXS數據與以上之X射線反射儀數據一起使用。When the X-ray reflectometer is used for surface analysis of nanostructures, the important and available information is along the thickness direction of the sample (relative to the given z-axis of the sample surface). The structure result deduced by the X-ray reflectometer is the result obtained from the lateral average value over the interference length at a specific depth. In order to obtain the precise 3D length of the nanostructure from the X-ray reflectometer, the external feature length needs to be added, and the relevant features can be obtained from the transmission small-angle X-ray scattering (tSAXS) from the normal incidence. value. Therefore, in the analysis process in this article, tSAXS data can be used together with the above X-ray reflectometer data.

在本文中所示之聚光光束中，散射向量Qx和Qy為從入射狹縫和偵測器狹縫之開合角度投射在樣品表面或x-y表面上。為了簡化，將入射狹縫和偵測器狹縫之開口大小設為相同，並表示為Φ。從簡單的幾何考慮出發，可列出以下公式； Qx = (π/λ) cos θ [-2Φ, 2Φ] Qy = (π/λ) cos θ [-Φ² , Φ² ]In the focused beam shown in this article, the scattering vectors Qx and Qy are projected on the sample surface or xy surface from the opening and closing angles of the incident slit and the detector slit. For the sake of simplicity, the opening size of the incident slit and the detector slit are set to be the same, and expressed as Φ. Starting from simple geometric considerations, the following formulas can be listed: Qx = (π/λ) cos θ [-2Φ, 2Φ] Qy = (π/λ) cos θ [-Φ ² , Φ ² ]

Φ以弧度為單位且其值通常小於1，當Φ=0.26或15

時，Qx的範圍為

0.52 (π/λ) cos θ，而Qy的範圍為

0.068 (π/λ) cos θ。聚光X射線反射儀設置中，光學設計之的狹縫開口角度通常為15

至 20

，這導致在大多數聚光之X射線反射儀測量中Qx＞Qy的情況。對於薄膜樣品，因為沒有橫向結構變化，有限的散射向量Qx、Qy和橫向干涉長度使得聚光X射線反射儀之應用沒有什麼限制。對於量測光柵樣品，希望將光柵與x軸對齊以減輕X射線反射儀測量中Qx之影響。對於橫向干涉長度而言，沿著x軸對齊也至關緊要，因為其干涉長度相當小。使用高度准直之帶狀入射光束，傳統X射線反射儀測量也可以看到光柵未對齊之結果。Φ is in radians and its value is usually less than 1. When Φ=0.26 or 15

, The range of Qx is

0.52 (π/λ) cos θ, and the range of Qy is

0.068 (π/λ) cos θ. In the setting of the concentrating X-ray reflectometer, the slit opening angle of the optical design is usually 15

Up to 20

, Which leads to the situation of Qx>Qy in most concentrated X-ray reflectometer measurements. For thin film samples, because there is no lateral structural change, the limited scattering vectors Qx, Qy and lateral interference length make the application of the concentrating X-ray reflectometer have no restrictions. For measuring grating samples, it is desirable to align the grating with the x-axis to reduce the influence of Qx in the X-ray reflectometer measurement. For the lateral interference length, alignment along the x-axis is also critical because the interference length is quite small. Using a highly collimated band-shaped incident beam, traditional X-ray reflectometer measurement can also see the result of grating misalignment.

即使不是使用本文聚光的入射光束，討論干涉長度以及散射向量Qx、Qy仍然非常重要，因為使用聚光或帶狀光束唯一的區別為Φ的值，本案使用之聚光入射光束的Φ值介於15

至25

，且對於帶狀光束來說，Φ值約為1

或更小。Even if it is not the incident light beam that is condensed in this article, it is still very important to discuss the interference length and the scattering vectors Qx and Qy, because the only difference between using condensed or ribbon beams is the value of Φ. The value of Φ of the condensed incident beam used in this case is related to At 15

To 25

, And for a ribbon beam, the value of Φ is about 1

Or smaller.

對於3D奈米結構樣品，相對於傳統X射線反射儀的軸（例如第2A圖所示的x軸或y軸），通常沒有明顯的橫向方向對齊，用以降低由於有限的干涉長度以及橫向散射向量Qx和Qy而產生之缺失。本發明的目的是解決使用聚光X射線反射儀方法之缺失來測量平面基板上的3D奈米結構。For 3D nanostructured samples, relative to the axis of a traditional X-ray reflectometer (such as the x-axis or y-axis shown in Figure 2A), there is usually no obvious lateral alignment to reduce the limited interference length and lateral scattering. The vectors Qx and Qy are missing. The purpose of the present invention is to solve the shortcomings of using the concentrating X-ray reflectometer method to measure 3D nanostructures on a flat substrate.

本發明可以解決習知聚光X射線反射儀的問題。首先，本文中的方法採用不同的入射角θ，可以分析樣品在z方向上的深度值。聚焦光將3D樣品的xy訊號與反射訊號集合在一起。通過分析沿z方向的電子密度對應於不同深度的結構組成，並結合已知外部之線寬或線距值，可成功解析3D材料的成分和大小。The invention can solve the problems of the conventional concentrating X-ray reflector. First, the method in this paper uses different incident angles θ to analyze the depth value of the sample in the z direction. The focused light brings together the xy signal and the reflected signal of the 3D sample. By analyzing the electron density along the z direction corresponding to the structural composition of different depths, combined with the known external line width or line spacing value, the composition and size of the 3D material can be successfully analyzed.

本案所欲解決的問題在於，以往檢測關鍵尺寸之常見方法有原子力顯微鏡(AFM)以及掃描電子顯微鏡(SEM)，但在量測關鍵尺寸皆遇到瓶頸。本發明提出以X射線反射儀長波長聚光檢測平面基板上之3D奈米結構之關鍵尺寸的方法，藉由扇形聚光可有效提升光強度、縮小檢測面積，並可同時收到不同平面方位角 (azimuthal angle) 之訊號，藉由積分以及EMA近似法可得到厚度以及密度資訊，配合密度對深度圖進行分析，可用於高精度檢測元件製程圖案(pattern)厚度，以及檢測元件的線寬以及線距之變化且具有高解析度(小於0.1nm)。The problem to be solved in this case is that in the past, common methods for detecting critical dimensions include atomic force microscope (AFM) and scanning electron microscope (SEM), but they have encountered bottlenecks in the measurement of critical dimensions. The present invention proposes a method for detecting the key dimensions of 3D nanostructures on a planar substrate with long-wavelength X-ray reflectometer. The fan-shaped condensing light can effectively increase the light intensity, reduce the detection area, and receive different plane orientations at the same time. The signal of azimuthal angle can obtain thickness and density information by integration and EMA approximation method, and analyze the depth map with density, which can be used for high-precision detection of component manufacturing process pattern thickness and detection component line width and Variation of line pitch and high resolution (less than 0.1nm).

請參照第1圖，其繪示依照本發明一實施例之X射線反射儀10的示意圖。X射線反射儀10可包括X射線光源100、X射線反射器102、入射狹縫200、偵測器狹縫201、X射線偵測器300以及至少一個分析儀301。X射線光源100用以發出光波長大於0.154奈米之X射線。X射線反射器102用於將一扇形X射線聚焦於一樣品400的一表面401，此扇形X射線具有在預定範圍內可調節之一入射角θ。在一實施例中，樣品400位於一平面基板410上，並可藉由樣品台500旋轉360度。平面基板410例如是半導體基板。Please refer to FIG. 1, which shows a schematic diagram of an X-ray reflectometer 10 according to an embodiment of the present invention. The X-ray reflectometer 10 may include an X-ray light source 100, an X-ray reflector 102, an incident slit 200, a detector slit 201, an X-ray detector 300, and at least one analyzer 301. The X-ray light source 100 is used to emit X-rays with a light wavelength greater than 0.154 nm. The X-ray reflector 102 is used to focus a fan-shaped X-ray on a surface 401 of a sample 400, and the fan-shaped X-ray has an incident angle θ that can be adjusted within a predetermined range. In one embodiment, the sample 400 is located on a flat substrate 410 and can be rotated 360 degrees by the sample stage 500. The planar substrate 410 is, for example, a semiconductor substrate.

此外，此入射狹縫200位在X射線反射器102和樣品400之間，且其寬度垂直於X射線的反射平面。此入射狹縫200的寬度比其開口202例如大10倍或更大，但本發明不以此為限。在一實施例中，扇形X射線的入射張角δθ通過入射狹縫200的開口202大小來控制，且扇形X射線的一發散張角

通過入射狹縫200的寬度來控制。另外，偵測器狹縫201位在X射線偵測器300和樣品400之間，用以調整反射X射線的張角。In addition, the incident slit 200 is located between the X-ray reflector 102 and the sample 400, and its width is perpendicular to the X-ray reflection plane. The width of the entrance slit 200 is, for example, 10 times or more larger than that of the opening 202, but the present invention is not limited to this. In one embodiment, the incident opening angle δθ of the fan-shaped X-ray is controlled by the size of the opening 202 of the incident slit 200, and a divergent opening angle of the fan-shaped X-ray

It is controlled by the width of the entrance slit 200. In addition, the detector slit 201 is located between the X-ray detector 300 and the sample 400 to adjust the opening angle of the reflected X-rays.

另外，X射線偵測器300具有良好像素解析度，用於收集樣品400的表面反射之扇形X射線。在一實施例中，在X射線偵測器300上收集的扇形X射線的每個方位角ω中，計算非鏡面反射值，並將非鏡面反射值從反射X射線強度中去除。In addition, the X-ray detector 300 has good pixel resolution and is used to collect fan-shaped X-rays reflected on the surface of the sample 400. In one embodiment, in each azimuth angle ω of the fan-shaped X-rays collected on the X-ray detector 300, the non-specular reflection value is calculated, and the non-specular reflection value is removed from the reflected X-ray intensity.

請參照第2A圖，其繪示樣品400上反射之扇形入射光束。入射光束與xy平面之間的角度為θ，與反射光束與xy平面之間的角度相同。Please refer to Figure 2A, which shows a fan-shaped incident beam reflected on the sample 400. The angle between the incident beam and the xy plane is θ, which is the same as the angle between the reflected beam and the xy plane.

請參照第2B圖，其繪示第2A圖的俯視圖。在第2A圖中，

是入射光和反射光的發散張角。i代表被樣品400鏡面反射到i'的光束；j表示被樣品400鏡面反射到j'的光束。圖中的另一個標示為光束m，光束m相對於y軸的角度為

，經由樣品400鏡面反射到m’，ij線和i’j’線分別代表入射光波前和反射光波前。Please refer to FIG. 2B, which shows a top view of FIG. 2A. In Figure 2A,

Is the divergence angle of incident light and reflected light. i represents the light beam that is specularly reflected by the sample 400 to i'; j represents the light beam that is specularly reflected by the sample 400 to j'. The other label in the figure is beam m, and the angle of beam m relative to the y axis is

, Through the specular reflection of the sample 400 to m', the ij line and the i'j' line represent the wavefront of the incident light and the wavefront of the reflected light, respectively.

第3圖表示入射光波前ij被鏡面反射在樣品400表面上，並且反射波前記錄在2D偵測器上畫作線i’j’。線i’j’上的每個點m’表示從入射波面上點m之鏡面反射，如第2B圖所示。鏡面反射線可以解釋為許多鏡面反射點m’之集合。Figure 3 shows that the incident light wavefront ij is specularly reflected on the surface of the sample 400, and the reflected wavefront is recorded on the 2D detector as a line i'j'. Each point m'on the line i'j' represents a specular reflection from a point m on the incident wave surface, as shown in Figure 2B. The specular reflection line can be interpreted as a collection of many specular reflection points m'.

第4A圖表示來自矽基底上之3D奈米多孔薄膜之2D偵測器之散射圖，其光源為良好准直之筆尖入射光(pencil beam)。第4B圖表示當第2A圖中所示的扇形入射光束打入如第4A圖所述的3D奈米多孔薄膜樣品400時的2D偵測器之散射圖。Figure 4A shows the scattering image of a 2D detector from a 3D nanoporous film on a silicon substrate. The light source is a well-collimated pencil beam. FIG. 4B shows the scattering pattern of the 2D detector when the fan-shaped incident beam shown in FIG. 2A strikes the 3D nanoporous film sample 400 as shown in FIG. 4A.

第4C圖表示沿第4B圖所示的線m’n’的散射強度分佈。陰影部分代表非鏡面反射的分布，應積分後減去，以獲得在第2A圖中所示的入射角θ下之鏡面反射值。在預設的入射角θ範圍內測量鏡面反射強度可得到XRR訊號之結果。Figure 4C shows the scattering intensity distribution along the line m'n' shown in Figure 4B. The shaded part represents the distribution of non-specular reflection, which should be integrated and subtracted to obtain the specular reflection value at the incident angle θ shown in Figure 2A. The result of XRR signal can be obtained by measuring the intensity of specular reflection within the range of the preset incident angle θ.

請參照第1及5圖，其中第5圖繪示依照本發明一實施例之用於X射線反射儀10的方法的流程圖。此方法包括下列步驟，首先，在步驟S210中，將一扇形X射線點聚焦到一樣品400的一表面401上，其中，扇形X射線的入射角θ在預設的角度範圍內可調整，並且扇形X射線的光波長大於0.154奈米。在步驟S220中，當入射角θ改變時，根據入射角θ調整扇形X射線的入射張角δθ，其中扇形X射線的入射張角δθ通過一入射狹縫200的開口202大小來控制，入射張角δθ例如為入射角θ之正切函數。在步驟S230中，通過此入射狹縫200的寬度W（參見第2B圖）來調節扇形X射線的發散張角

。在步驟S240中，使用一X射線偵測器300收集扇形反射之X射線。在步驟S250中，在X射線偵測器300上收集的扇形X射線的每個方位角ω中，計算非鏡面反射值，並將非鏡面反射值從反射X射線強度中去除，如第4C圖所示。在步驟S260中，在每個方位角ω中剩餘的反射X射線強度的鏡面反射分量，將其積分以獲得每個入射角θ之鏡面反射強度。在步驟S270中，在預定的入射角θ範圍內，收集鏡面反射強度與入射光束的總強度之比，用以分析樣品400之表面結構訊息。Please refer to FIGS. 1 and 5. FIG. 5 shows a flowchart of a method for the X-ray reflectometer 10 according to an embodiment of the present invention. This method includes the following steps. First, in step S210, a fan-shaped X-ray spot is focused on a surface 401 of a sample 400, wherein the incident angle θ of the fan-shaped X-ray is adjustable within a preset angle range, and The light wavelength of fan-shaped X-rays is greater than 0.154 nm. In step S220, when the incident angle θ changes, adjust the incident opening angle δθ of the fan-shaped X-ray according to the incident angle θ, where the incident opening angle δθ of the fan-shaped X-ray is controlled by the size of the opening 202 of an incident slit 200, and the incident opening angle δθ is, for example, Is the tangent function of the incident angle θ. In step S230, the divergence angle of the fan-shaped X-ray is adjusted by the width W of the entrance slit 200 (see Fig. 2B)

. In step S240, an X-ray detector 300 is used to collect fan-shaped X-rays. In step S250, in each azimuth angle ω of the fan-shaped X-rays collected on the X-ray detector 300, the non-specular reflection value is calculated, and the non-specular reflection value is removed from the reflected X-ray intensity, as shown in Figure 4C. Shown. In step S260, the specular reflection component of the reflected X-ray intensity remaining in each azimuth angle ω is integrated to obtain the specular reflection intensity of each incident angle θ. In step S270, the ratio of the intensity of the specular reflection to the total intensity of the incident beam is collected within a predetermined range of the incident angle θ to analyze the surface structure information of the sample 400.

在一實施例中，上述光波長不超過沿樣品400的結構表面法線的特徵長度之兩倍。In one embodiment, the aforementioned light wavelength does not exceed twice the characteristic length along the normal to the structure surface of the sample 400.

在一實施例中，上述特徵長度選自樣品400表面之膜厚度和樣品400表面之奈米結構高度。In one embodiment, the aforementioned characteristic length is selected from the thickness of the film on the surface of the sample 400 and the height of the nanostructure on the surface of the sample 400.

在一實施例中，上述X射線反射器102選自單晶單色儀和多層鏡之組合，X射線反射器102之多層鏡波長色散小於0.01。In one embodiment, the above-mentioned X-ray reflector 102 is selected from a combination of a single crystal monochromator and a multilayer mirror, and the wavelength dispersion of the multilayer mirror of the X-ray reflector 102 is less than 0.01.

在一實施例中，上述入射張角δθ是入射角θ之函數。也就是說，入射張角δθ可隨不同入射角θ而改變。In one embodiment, the aforementioned incident opening angle δθ is a function of the incident angle θ. That is, the incident opening angle δθ can be changed with different incident angles θ.

在一實施例中，上述入射張角δθ等於入射角θ之正切函數乘上一個常數K（即δθ=K*tanθ）。In one embodiment, the aforementioned incident opening angle δθ is equal to the tangent function of the incident angle θ multiplied by a constant K (ie δθ=K*tanθ).

在一實施例中，上述X射線光源100包括良好聚焦之鋁靶材。In one embodiment, the above-mentioned X-ray light source 100 includes a well-focused aluminum target.

在一實施例中，上述分析儀301用於在X射線被X射線偵測器300收集期間，分析儀301包括X射線光電子能譜儀（X-ray photoelectron spectrometer, XPS）和/或X射線螢光光譜儀（X-ray fluorescence spectrometer）。In one embodiment, the analyzer 301 is used to collect X-rays by the X-ray detector 300. The analyzer 301 includes an X-ray photoelectron spectrometer (XPS) and/or an X-ray fluorescence spectrometer (X-ray photoelectron spectrometer, XPS). X-ray fluorescence spectrometer.

在上述步驟S230中，樣品台500還可沿著樣品400的表面法線旋轉，使X射線在不同的方位角ω進行，方位角ω為樣品400表面的給定軸線（例如y軸）與X射線之反射平面間之夾角。In the above step S230, the sample stage 500 can also be rotated along the surface normal of the sample 400, so that the X-rays are performed at different azimuth angles ω. The azimuth angle ω is a given axis (such as the y axis) of the sample 400 surface and X The angle between the reflection planes of the rays.

在上述步驟S240中，在收集反射之X射線期間，可收集X射線光電子能譜（X-ray photoelectron spectroscopy, XPS）訊號；在收集反射的X射線期間，收集X射線螢光(X-ray fluorescence, XRF)光譜訊號，並從XPS訊號、XRF訊號和XRR訊號分析樣品400之表面結構訊息。In the above step S240, during the collection of reflected X-rays, X-ray photoelectron spectroscopy (XPS) signals can be collected; during the collection of reflected X-rays, X-ray fluorescence (X-ray fluorescence) can be collected. , XRF) spectrum signal, and analyze the surface structure information of sample 400 from XPS signal, XRF signal and XRR signal.

根據本發明上述實施例之X射線反射儀及其方法，藉由採用不同的入射角θ，可以分析樣品在z方向上的關鍵尺寸。由於本發明將樣品的Qx、Qy訊號與反射訊號Qz集合在一起，只取Qz方向之光強度，通過分析沿z方向的電子密度對深度圖，並結合已知外部之線距值可成功分析不同深度之關鍵尺寸。此外，本發明之X射線反射儀使用長波長聚光X射線，其波長大於一般商業銅靶材0.154 nm，且小於沿膜厚度方向的特徵尺寸之兩倍，並在入射光出口加裝適當的准直器，可測量微區和有限散射體積之樣品，例如是平面基板（半導體基板）上之三維奈米結構樣品，以解決X射線反射儀沿三個座標方向檢測都具有複雜奈米結構時所遇到的困難，複雜結構例如為具有奈米尺度之桿或軸陣列。According to the X-ray reflectometer and method of the above embodiment of the present invention, by using different incident angles θ, the critical dimensions of the sample in the z direction can be analyzed. Since the present invention combines the Qx, Qy signals and the reflection signal Qz of the sample, only the light intensity in the Qz direction is taken, and the analysis can be successfully performed by analyzing the electron density vs. depth map along the z direction and combining the known external line distance value. Key dimensions of different depths. In addition, the X-ray reflectometer of the present invention uses long-wavelength concentrated X-rays, whose wavelength is greater than 0.154 nm for general commercial copper targets and less than twice the feature size along the thickness of the film, and an appropriate The collimator can measure samples with micro-area and limited scattering volume, such as a three-dimensional nanostructure sample on a flat substrate (semiconductor substrate), to solve the problem of X-ray reflectometer detection of complex nanostructures along the three coordinate directions The difficulties encountered are complex structures such as rods or axis arrays with nanometer scales.

綜上所述，雖然本發明已以實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。In summary, although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to those defined by the attached patent application scope.

10:X射線反射儀 100:X射線光源 102:X射線反射器 200:入射狹縫 201:偵測器狹縫 202:開口 300:X射線偵測器 301:分析儀 400:樣品 401:表面 410:平面基板 500:樣品台 ω:方位角 δθ:入射張角

:發散張角 θ:入射角 m’:鏡面反射點 ij:入射光波前 i’j’:反射光波前 W:狹縫寬度10: X-ray reflectometer 100: X-ray source 102: X-ray reflector 200: Incident slit 201: Detector slit 202: Opening 300: X-ray detector 301: Analyzer 400: Sample 401: Surface 410 : Planar substrate 500: Sample stage ω: Azimuth angle δθ: Incident opening angle

: Divergence angle θ: incident angle m': specular reflection point ij: incident light wavefront i'j': reflected light wavefront W: slit width

第1圖繪示依照本發明一實施例之X射線反射儀的示意圖；第2A圖繪示樣品上反射之扇形入射光束；第2B圖繪示第2A圖的俯視圖；第3圖表示入射波前ij被鏡面反射在樣品表面上；第4A圖表示來自矽基底上之3D奈米多孔薄膜之2D偵測器之散射圖；第4B圖表示當第2A圖中所示的扇形入射光束打入如第4A圖所述的3D奈米多孔薄膜樣品時的2D偵測器之散射圖；第4C圖表示沿第4B圖所示的線m’n’的散射強度分佈；及第5圖繪示依照本發明一實施例之用於X射線反射儀的方法的流程圖。Figure 1 shows a schematic diagram of an X-ray reflectometer according to an embodiment of the invention; Figure 2A shows the fan-shaped incident beam reflected on the sample; Figure 2B shows a top view of Figure 2A; Figure 3 shows that the incident wavefront ij is specularly reflected on the sample surface; Figure 4A shows the scattering pattern of the 2D detector from the 3D nanoporous film on the silicon substrate; Figure 4B shows the scatter diagram of the 2D detector when the fan-shaped incident beam shown in Figure 2A strikes the 3D nanoporous film sample as described in Figure 4A; Figure 4C shows the scattering intensity distribution along the line m'n' shown in Figure 4B; and Figure 5 shows a flowchart of a method for an X-ray reflectometer according to an embodiment of the present invention.

10:X射線反射儀10: X-ray reflectometer

100:X射線光源100: X-ray light source

102:X射線反射器102: X-ray reflector

200:入射狹縫200: entrance slit

201:偵測器狹縫201: Detector slit

202:開口202: open

300:X射線偵測器300: X-ray detector

301:分析儀301: Analyzer

400:樣品400: sample

401:表面401: Surface

410:平面基板410: Planar substrate

500:樣品台500: sample table

δθ:入射張角δθ: Incident opening angle

θ:入射角θ: incident angle

Claims

一種用於檢測平面基板上之三維奈米結構的X光反射儀，包括： X射線光源，用以發出光波長大於0.154奈米之X射線； X射線反射器，用於將一扇形X射線聚焦於一樣品的一表面；一入射狹縫，位在該X射線反射器和該樣品之間，該入射狹縫的寬度比其開口大10倍或更大，且其寬度垂直於該X射線的反射平面；以及 X射線偵測器，具有良好像素解析度，用於收集該樣品的該表面反射之該扇形X射線，其中，該扇形X射線具有在預定範圍內可調節之一入射角，該扇形X射線的入射張角通過該入射狹縫的開口大小來控制，該扇形X射線的一發散張角通過該入射狹縫的寬度來控制，其中，在該X射線偵測器上收集的該扇形X射線的每個方位角中，計算非鏡面反射值，並將該非鏡面反射值從反射X射線強度中去除。An X-ray reflectometer for detecting three-dimensional nanostructures on a flat substrate, including: X-ray light source, used to emit X-rays with a light wavelength greater than 0.154 nanometers; X-ray reflector, used to focus a fan-shaped X-ray on a surface of a sample; An entrance slit located between the X-ray reflector and the sample, the width of the entrance slit is 10 times or more larger than its opening, and its width is perpendicular to the X-ray reflection plane; and An X-ray detector with good pixel resolution is used to collect the fan-shaped X-rays reflected on the surface of the sample, Wherein, the fan-shaped X-ray has an angle of incidence that can be adjusted within a predetermined range, The incident opening angle of the fan-shaped X-ray is controlled by the opening size of the incident slit, A divergent opening angle of the fan-shaped X-ray is controlled by the width of the incident slit, Wherein, in each azimuth angle of the fan-shaped X-ray collected on the X-ray detector, a non-specular reflection value is calculated, and the non-specular reflection value is removed from the reflected X-ray intensity.

如請求項1所述之X射線反射儀，其中該光波長不超過沿該樣品的結構表面法線的特徵長度之兩倍。The X-ray reflectometer according to claim 1, wherein the wavelength of the light does not exceed twice the characteristic length along the surface normal of the structure of the sample.

如請求項2所述之X射線反射儀，其中該特徵長度選自該表面之膜厚度和該表面之奈米結構高度。The X-ray reflectometer according to claim 2, wherein the characteristic length is selected from the film thickness of the surface and the height of the nanostructure of the surface.

如請求項1所述之X射線反射儀，其中該X射線反射器選自單晶單色儀和多層鏡之組合，該X射線反射器之多層鏡波長色散小於0.01。The X-ray reflectometer according to claim 1, wherein the X-ray reflector is selected from a combination of a single crystal monochromator and a multilayer mirror, and the wavelength dispersion of the multilayer mirror of the X-ray reflector is less than 0.01.

如請求項1所述之X射線反射儀，其中該入射張角是該入射角之函數。The X-ray reflectometer according to claim 1, wherein the angle of incidence is a function of the angle of incidence.

如請求項5所述之X射線反射儀，其中該入射張角等於該入射角的正切函數乘上一常數。The X-ray reflectometer according to claim 5, wherein the incident opening angle is equal to the tangent function of the incident angle multiplied by a constant.

如請求項1所述之X射線反射儀，其中該X射線光源包括良好聚焦之鋁靶材。The X-ray reflectometer according to claim 1, wherein the X-ray light source includes a well-focused aluminum target.

如請求項1所述之X射線反射儀，更包括至少一個分析儀用於在該X射線被該X射線偵測器收集期間，該至少一個分析儀包括X射線光電子能譜儀和/或X射線螢光光譜儀。The X-ray reflectometer according to claim 1, further comprising at least one analyzer for collecting the X-ray by the X-ray detector, the at least one analyzer including an X-ray photoelectron spectrometer and/or X-ray Ray fluorescence spectrometer.

一種用於X射線反射儀（XRR）的方法，用於檢測平面基板上之三維奈米結構，包括：將一扇形X射線點聚焦到一樣品的一表面上，其中，該扇形X射線的入射角在預設的角度範圍內可調整，並且該扇形X射線的光波長大於0.154奈米；當該入射角改變時，根據該入射角調整該扇形X射線的入射張角，其中該扇形X射線的入射張角通過一入射狹縫的開口大小來控制；通過該入射狹縫的寬度來調節該扇形X射線的一發散張角；使用一X射線偵測器收集該扇形反射之X射線；在該X射線偵測器上收集的該扇形X射線的每個方位角中，計算非鏡面反射值，並將該非鏡面反射值從反射X射線強度中去除；在每個該方位角中剩餘的該反射X射線強度的鏡面反射分量，將其積分以獲得每個入射角之鏡面反射強度；以及在預定的該入射角範圍內，收集該鏡面反射強度與該入射光束的總強度之比，用以分析該樣品之表面結構訊息。A method used in X-ray reflectometer (XRR) to detect three-dimensional nanostructures on a flat substrate, including: Focusing a fan-shaped X-ray spot on a surface of a sample, wherein the incident angle of the fan-shaped X-ray is adjustable within a preset angle range, and the light wavelength of the fan-shaped X-ray is greater than 0.154 nm; When the incident angle changes, adjust the incident opening angle of the fan-shaped X-ray according to the incident angle, wherein the incident opening angle of the fan-shaped X-ray is controlled by the opening size of an incident slit; Adjust a divergent opening angle of the fan-shaped X-ray through the width of the incident slit; Use an X-ray detector to collect the X-rays reflected by the fan; Calculate the non-specular reflection value in each azimuth angle of the fan-shaped X-ray collected on the X-ray detector, and remove the non-specular reflection value from the reflected X-ray intensity; The specular reflection component of the reflected X-ray intensity remaining in each azimuth angle is integrated to obtain the specular reflection intensity of each incident angle; and Within the predetermined range of the incident angle, the ratio of the specular reflection intensity to the total intensity of the incident beam is collected to analyze the surface structure information of the sample.

如請求項9所述之方法，包括沿著該樣本的該表面法線旋轉，使其在不同的該方位角進行，該方位角為該樣品表面的給定軸線與一反射平面間之夾角。The method according to claim 9, including rotating along the normal of the surface of the sample to perform at different azimuth angles, the azimuth angle being the angle between a given axis of the sample surface and a reflection plane.

如請求項9所述之方法，其中該光波長不超過沿該樣品的結構表面法線的特徵長度之兩倍。The method according to claim 9, wherein the wavelength of the light does not exceed twice the characteristic length along the normal to the surface of the structure of the sample.

如請求項11所述之方法，其中該特徵長度選自該表面之膜厚度和該表面之奈米結構高度。The method according to claim 11, wherein the characteristic length is selected from the film thickness of the surface and the nanostructure height of the surface.

如請求項9所述之方法，其中該入射張角是該入射角之函數。The method of claim 9, wherein the angle of incidence is a function of the angle of incidence.

如請求項13所述之方法，其中該入射張角等於該入射角的正切函數乘上一常數。The method according to claim 13, wherein the angle of incidence is equal to the tangent function of the angle of incidence multiplied by a constant.

如請求項9所述之方法，在收集該反射之X射線期間，收集X射線光電子能譜（XPS）訊號；在收集該反射的X射線期間，收集X射線螢光(XRF)光譜訊號，並從XPS訊號、XRF訊號和XRR訊號分析該樣品之表面結構訊息。According to the method described in claim 9, during the collection of the reflected X-rays, X-ray photoelectron spectroscopy (XPS) signals are collected; during the collection of the reflected X-rays, X-ray fluorescence (XRF) spectrum signals are collected, and Analyze the surface structure information of the sample from the XPS signal, XRF signal and XRR signal.

一種用於X射線反射儀（XRR）的方法，用於檢測平面基板上之三維奈米結構，包括：使用一X射線偵測器收集鏡面反射和非鏡面反射的一扇形X射線；以及在該X射線偵測器上收集的該扇形X射線的每個方位角中，計算非鏡面反射值，並將該非鏡面反射值從反射X射線強度中去除。A method used in X-ray reflectometer (XRR) to detect three-dimensional nanostructures on a flat substrate, including: Use an X-ray detector to collect specular and non-specular X-rays; and In each azimuth angle of the fan-shaped X-rays collected on the X-ray detector, a non-specular reflection value is calculated, and the non-specular reflection value is removed from the reflected X-ray intensity.

如請求項16所述之方法，更包括在每個方位角中剩餘的該反射X射線強度的鏡面反射分量，將其積分以獲得每個入射角之鏡面反射強度。The method described in claim 16 further includes the remaining specular reflection component of the reflected X-ray intensity in each azimuth angle, and integrating it to obtain the specular reflection intensity of each incident angle.

如請求項17所述之方法，更包括在預定的該入射角範圍內，收集該鏡面反射強度與該扇形X射線的入射光束的總強度之比，用以分析一樣品之表面結構訊息。The method according to claim 17, further comprising collecting the ratio of the specular reflection intensity to the total intensity of the incident beam of the fan-shaped X-ray within the predetermined range of the incident angle to analyze the surface structure information of a sample.

如請求項16所述之方法，在收集該反射之X射線期間，收集X射線光電子能譜（XPS）訊號；在收集該反射的X射線期間，收集X射線螢光(XRF)光譜訊號，並從XPS訊號、XRF訊號和XRR訊號分析一樣品之表面結構訊息。According to the method described in claim 16, during the collection of the reflected X-rays, X-ray photoelectron spectroscopy (XPS) signals are collected; during the collection of the reflected X-rays, X-ray fluorescence (XRF) spectrum signals are collected, and Analyze the surface structure information of a sample from the XPS signal, XRF signal and XRR signal.