TW202115773A - Substrate treatment device and substrate treatment method - Google Patents

Substrate treatment device and substrate treatment method Download PDF

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TW202115773A
TW202115773A TW109119765A TW109119765A TW202115773A TW 202115773 A TW202115773 A TW 202115773A TW 109119765 A TW109119765 A TW 109119765A TW 109119765 A TW109119765 A TW 109119765A TW 202115773 A TW202115773 A TW 202115773A
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substrate
processing liquid
liquid
discharge path
processing
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TWI803755B (en
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中井仁司
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日商斯庫林集團股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

This substrate treatment device includes: an opposing member that has a disk part having an opposing surface opposing, from above, a substrate held by a substrate holding unit and an extension part extending from the disk part to the outside in the radial direction centered on a vertical axis; an annular member that encircles the substrate held by the substrate holding unit in a plan view; and an opposing member lifting and lowering unit for lifting and lowering, in cooperation with the annular member, the opposing member such that a blocked space to which the inflow of atmosphere from the outside is restricted is demarcated by the substrate, the opposing member, and the annular member. The annular member has a guiding surface for, when a substrate rotation unit rotates the substrate held by the substrate holding unit, guiding a treatment liquid present on the upper surface of the substrate, by centrifugal force, radially outward relative to a circumferential edge section of the substrate. The extension part and the annular member demarcate a treatment liquid discharge path from which the treatment liquid present on the guiding surface is discharged to the outside of the blocking space.

Description

基板處理裝置以及基板處理方法Substrate processing device and substrate processing method

本發明係有關於一種用以處理基板之基板處理裝置以及基板處理方法。成為處理對象之基板係例如包括半導體晶圓、液晶顯示裝置用基板、有機EL(electroluminescence；電致發光)顯示裝置等FPD(Flat Panel Display；平板顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩(photomask)用基板、陶瓷基板、太陽電池用基板等基板。The present invention relates to a substrate processing device and a substrate processing method for processing substrates. The substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, organic EL (electroluminescence; electroluminescence) display devices, such as FPD (Flat Panel Display) substrates, substrates for optical disks, and substrates for magnetic disks. , Optical magnetic disk substrates, photomask substrates, ceramic substrates, solar cell substrates and other substrates.

在藉由藥液等處理液處理基板的表面時，會有因為溶入至處理液中的氧導致形成於基板的表面的圖案(pattern)氧化之虞。為了抑制圖案的氧化，需要降低基板的表面附近的氛圍(atmosphere)的氧濃度。When the surface of the substrate is treated with a treatment liquid such as a chemical liquid, there is a possibility that a pattern formed on the surface of the substrate may be oxidized due to oxygen dissolved in the treatment liquid. In order to suppress the oxidation of the pattern, it is necessary to reduce the oxygen concentration of the atmosphere near the surface of the substrate.

因此，在下述專利文獻1中揭示了：設置有與被自轉夾具(spin chuck)保持之基板的上表面對向之阻隔構件，藉由氮氣充滿阻隔構件與基板之間的空間，藉此能降低基板的上表面附近的氛圍的氧濃度。 [先前技術文獻] [專利文獻]Therefore, Patent Document 1 below discloses that a barrier member opposed to the upper surface of a substrate held by a spin chuck is provided, and the space between the barrier member and the substrate is filled with nitrogen gas, thereby reducing The oxygen concentration of the atmosphere near the upper surface of the substrate. [Prior Technical Literature] [Patent Literature]

[專利文獻1]美國發明申請案公開第2015/14610009號公報。[Patent Document 1] U.S. Invention Application Publication No. 2015/14610009.

[發明所欲解決之課題][The problem to be solved by the invention]

專利文獻1所記載的基板處理裝置所具備之阻隔構件係包含：圓板部，係與基板的上表面對向；以及圓筒部，係從圓板部的外周部朝下方延伸。由於藉由圓筒部圍繞基板，因此容易藉由氮氣降低基板的上表面附近的氛圍的氧濃度。當在藉由圓筒部圍繞基板的狀態下對基板的上表面供給處理液時，基板上的處理液係從基板的上表面的周緣部朝外側方向飛散並被圓筒部接住。因此，會有從圓筒部濺回的處理液再次附著於基板的上表面的周緣部從而產生微粒(particle)之虞。The barrier member included in the substrate processing apparatus described in Patent Document 1 includes a circular plate portion opposed to the upper surface of the substrate, and a cylindrical portion extending downward from the outer peripheral portion of the circular plate portion. Since the cylindrical portion surrounds the substrate, it is easy to reduce the oxygen concentration of the atmosphere in the vicinity of the upper surface of the substrate by nitrogen gas. When the processing liquid is supplied to the upper surface of the substrate in a state where the substrate is surrounded by the cylindrical portion, the processing liquid on the substrate scatters outward from the peripheral portion of the upper surface of the substrate and is caught by the cylindrical portion. Therefore, the processing liquid splashed back from the cylindrical portion may re-attach to the peripheral portion of the upper surface of the substrate, thereby generating particles.

因此，本發明的目的之一在於提供一種基板處理裝置以及基板處理方法，係能降低基板的上表面附近的氛圍中的氧濃度，且能抑制基板的上表面中的微粒的產生。 [用以解決課題之手段]Therefore, one of the objects of the present invention is to provide a substrate processing apparatus and a substrate processing method that can reduce the oxygen concentration in the atmosphere near the upper surface of the substrate and can suppress the generation of particles on the upper surface of the substrate. [Means to solve the problem]

本發明的實施形態之一提供一種基板處理裝置，係包含：基板保持單元，係水平地保持基板；基板旋轉單元，係使前述基板保持單元繞著通過被前述基板保持單元保持之前述基板的中央部之鉛直軸線旋轉；處理液供給單元，係朝被前述基板保持部保持之前述基板的上表面供給處理液；惰性氣體供給單元，係朝被前述基板保持單元保持之前述基板的上表面供給惰性氣體；對向構件，係包含：圓板部，係具有對向面，前述對向面係從上方與被前述基板保持單元保持之前述基板對向；以及延伸設置部，係從前述圓板部朝以前述鉛直軸線作為中心之徑方向的外側方向延伸；環狀構件，係俯視觀看時圍繞被前述基板保持單元保持之前述基板；以及對向構件升降單元，係使前述對向構件與前述環狀構件一起升降，從而藉由被前述基板保持單元保持之前述基板、前述對向構件以及前述環狀構件區劃阻隔空間，前述阻隔空間係限制了來自外部的氛圍的流入。One of the embodiments of the present invention provides a substrate processing apparatus including: a substrate holding unit that holds a substrate horizontally; and a substrate rotation unit that makes the substrate holding unit pass around the center of the substrate held by the substrate holding unit The vertical axis of the portion rotates; the processing liquid supply unit supplies the processing liquid to the upper surface of the substrate held by the substrate holding portion; the inert gas supply unit supplies inert gas to the upper surface of the substrate held by the substrate holding unit The opposed member includes: a circular plate portion having an opposed surface, and the opposed surface is opposed to the substrate held by the substrate holding unit from above; and an extension portion is formed from the circular plate portion Extending in the outer direction of the radial direction with the vertical axis as the center; a ring-shaped member that surrounds the substrate held by the substrate holding unit when viewed from above; and an opposing member elevating unit that connects the opposing member and the ring The shaped member is raised and lowered together, so that the blocking space is partitioned by the substrate held by the substrate holding unit, the facing member, and the annular member, and the blocking space restricts the inflow of the atmosphere from the outside.

前述環狀構件係具有導引面，前述導引面係在前述基板旋轉單元使被前述基板保持單元保持之前述基板旋轉時藉由離心力將存在於前述基板的上表面的處理液導引至比前述基板的周緣部還更前述徑方向的外側方向。而且，藉由前述延伸設置部以及前述環狀構件區劃處理液排出路徑，前述處理液排出路徑係將存在於前述導引面的處理液朝前述阻隔空間外排出。The ring-shaped member has a guide surface, and the guide surface guides the processing liquid on the upper surface of the substrate by centrifugal force when the substrate rotating unit rotates the substrate held by the substrate holding unit. The peripheral edge part of the said board|substrate is further the outer direction of the said radial direction. Furthermore, the processing liquid discharge path is partitioned by the extension portion and the annular member, and the processing liquid discharge path discharges the processing liquid existing on the guide surface to the outside of the blocking space.

依據此種基板處理裝置，使對向構件與環狀構件一起升降，藉此藉由基板、對向構件以及環狀構件區劃阻隔空間。在區劃了阻隔空間的狀態下朝基板的上表面供給惰性氣體，藉此能將阻隔空間內的氛圍置換成惰性氣體。藉此，能降低阻隔空間內的氧濃度，亦即能降低基板的上表面附近的氛圍的氧濃度。由於阻隔空間係限制氛圍從外部的空間流入，因此當阻隔空間內的氛圍被一次性地置換成惰性氣體時，容易維持在阻隔空間內的氛圍中的氧濃度已被降低的狀態。According to this substrate processing apparatus, the facing member and the ring member are raised and lowered together, whereby the blocking space is partitioned by the substrate, the facing member, and the ring member. By supplying an inert gas to the upper surface of the substrate in a state where the barrier space is divided, the atmosphere in the barrier space can be replaced with an inert gas. Thereby, the oxygen concentration in the barrier space can be reduced, that is, the oxygen concentration of the atmosphere near the upper surface of the substrate can be reduced. Since the barrier space restricts the inflow of atmosphere from the external space, when the atmosphere in the barrier space is replaced with an inert gas at one time, it is easy to maintain a state where the oxygen concentration in the atmosphere in the barrier space has been reduced.

在阻隔空間內的氛圍已被置換成惰性氣體的狀態下對基板的上表面供給處理液，藉此能一邊抑制處理液中的氧濃度的上升一邊藉由處理液處理基板的上表面。Supplying the processing liquid to the upper surface of the substrate in a state where the atmosphere in the barrier space has been replaced with an inert gas, the upper surface of the substrate can be processed by the processing liquid while suppressing an increase in the oxygen concentration in the processing liquid.

環狀構件的導引面係藉由基於基板的旋轉所致使的離心力將存在於基板的上表面的處理液導引至比基板的周緣部還更徑方向的外側方向。而且，於導引面上移動的處理液係不會從基板飛散，而是被導引至處理液排出路徑並被排出至阻隔空間外。由於在基板的周緣部與處理液排出路徑之間存在導引面，因此基板的周緣部係從對向構件的延伸設置部充分地離開。因此，能抑制從基板的上表面排出的處理液從對向構件濺回並再次附著於基板的上表面。假設即使從基板的上表面排出的處理液從對向構件濺回，濺回的處理液的大部分亦會附著於比基板的上表面還更位於徑方向的外側方向的導引面。因此，能抑制處理液再次附著於基板的上表面。因此，能抑制於基板的上表面產生微粒。The guide surface of the ring-shaped member guides the processing liquid present on the upper surface of the substrate to a radially outer direction than the peripheral edge of the substrate by centrifugal force caused by the rotation of the substrate. Furthermore, the processing liquid system moving on the guide surface does not scatter from the substrate, but is guided to the processing liquid discharge path and discharged to the outside of the blocking space. Since there is a guide surface between the peripheral edge portion of the substrate and the processing liquid discharge path, the peripheral edge portion of the substrate is sufficiently separated from the extended portion of the opposing member. Therefore, it is possible to prevent the processing liquid discharged from the upper surface of the substrate from being splashed back from the opposing member and attached to the upper surface of the substrate again. It is assumed that even if the processing liquid discharged from the upper surface of the substrate splashes back from the opposing member, most of the splashed processing liquid adheres to the guide surface located in the radially outer direction than the upper surface of the substrate. Therefore, it is possible to prevent the processing liquid from reattaching to the upper surface of the substrate. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

藉由以上的結果，能降低基板的上表面附近的氛圍中的氧濃度，且能抑制基板的上表面中的微粒的產生。As a result of the above, the oxygen concentration in the atmosphere near the upper surface of the substrate can be reduced, and the generation of particles on the upper surface of the substrate can be suppressed.

在本發明的實施形態之一中，前述處理液排出路徑的寬度係比鉛直方向中的前述阻隔空間的寬度還小。因此，能通過處理液排出路徑之流體的流量為較小的流量。因此，能抑制在處理液經由處理液排出路徑排出至阻隔空間外之期間阻隔空間外的氛圍經由處理液排出路徑流入。因此，能一邊抑制處理液中的氧濃度的上升一邊藉由處理液處理基板的上表面。In one embodiment of the present invention, the width of the processing liquid discharge path is smaller than the width of the blocking space in the vertical direction. Therefore, the flow rate of the fluid that can pass through the treatment liquid discharge path is a small flow rate. Therefore, it is possible to suppress the inflow of the atmosphere outside the barrier space through the process liquid discharge path while the process liquid is discharged to the outside of the barrier space through the process liquid discharge path. Therefore, the upper surface of the substrate can be processed by the processing liquid while suppressing the increase in the oxygen concentration in the processing liquid.

在本發明的實施形態之一中，前述環狀構件係具有：排出路徑區劃面，係連結於前述徑方向中的前述導引面的外側方向端，並區劃前述處理液排出路徑。而且，前述處理液排出路徑係於前述導引面與前述排出路徑區劃面之間的交界具有流入口。In one embodiment of the present invention, the ring-shaped member has a discharge path dividing surface which is connected to the outer direction end of the guide surface in the radial direction and divides the processing liquid discharge path. In addition, the processing liquid discharge path has an inflow port at the boundary between the guide surface and the discharge path partition surface.

會有處理液在處理液排出路徑的流入口附近碰撞至延伸設置部之情形。於碰撞至延伸設置部的處理液中產生逆流(朝向基板的徑方向的內側方向之處理液的流動)。只要為未設置有導引面之構成，則由於處理液排出路徑的流入口配置於基板的上表面的周緣部的附近，因此會有在基板上產生處理液中的逆流之虞。當產生逆流時，會有朝向徑方向的內側方向之處理液與朝向徑方向的外側方向之處理液碰撞導致處理液在阻隔空間內飛散之虞。當在阻隔空間內飛散的處理液再次附著於基板的上表面時，會於基板上產生微粒。The processing liquid may collide with the extension part near the inflow port of the processing liquid discharge path. A reverse flow (a flow of the processing liquid toward the inner side of the radial direction of the substrate) is generated in the processing liquid that has collided with the extension portion. As long as the guide surface is not provided, since the inflow port of the processing liquid discharge path is arranged near the periphery of the upper surface of the substrate, there is a possibility that a backflow in the processing liquid may occur on the substrate. When a backflow occurs, there is a possibility that the treatment liquid facing the inner direction of the radial direction collides with the treatment liquid facing the outer direction of the radial direction, causing the treatment liquid to scatter in the blocking space. When the processing liquid scattered in the barrier space adheres to the upper surface of the substrate again, particles are generated on the substrate.

因此，只要為處理液排出路徑的流入口設置於連結於徑方向中的導引面的外側方向端之排出路徑區劃面與導引面之間的交界之構成，則處理液中的逆流的產生部位為導引面上。因此，能抑制於基板上的處理液中產生逆流。因此，能抑制於基板的上表面產生微粒。Therefore, as long as the inflow port of the treatment liquid discharge path is provided at the boundary between the discharge path partition surface and the guide surface connected to the outer direction end of the guide surface in the radial direction, the backflow in the treatment liquid will be generated. The part is the guide surface. Therefore, it is possible to suppress the occurrence of backflow in the processing liquid on the substrate. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

在本發明的實施形態之一中，前述排出路徑區劃面以及前述導引面係構成於水平方向平坦的單一個平坦面。在導引面與排出路徑區劃面之間設置有段差之情形中，會有因為段差而濺起的處理液再次附著於基板的上表面之虞。因此，會有於基板的上表面產生微粒之虞。In one embodiment of the present invention, the discharge path dividing surface and the guide surface are formed on a single flat surface that is flat in the horizontal direction. In the case where a step is provided between the guide surface and the delimiting surface of the discharge path, the processing liquid splashed due to the step may reattach to the upper surface of the substrate. Therefore, there is a risk of generating particles on the upper surface of the substrate.

因此，只要導引面與排出路徑區劃面之間無段差且導引面與排出路徑區劃面構成於水平方向平坦的單一個平坦面，即能使於導引面上流動的處理液順暢地流入至處理液排出路徑。因此，能抑制處理液在阻隔空間內飛散，從而能抑制因為處理液的飛散導致產生微粒。Therefore, as long as there is no step difference between the guide surface and the discharge path partition surface and the guide surface and the discharge path partition surface are formed on a single flat surface that is flat in the horizontal direction, the processing liquid flowing on the guide surface can flow smoothly. To the treatment liquid discharge path. Therefore, it is possible to prevent the treatment liquid from scattering in the barrier space, and it is possible to suppress the generation of particles due to the scattering of the treatment liquid.

在本發明的實施形態之一中，前述基板處理裝置進一步包含：對向構件旋轉單元，係使前述對向構件與前述環狀構件一起繞著前述鉛直軸線與被前述基板保持單元保持之前述基板同步旋轉。所謂同步旋轉係指以相同的旋轉速度朝相同的方向旋轉。在基板的旋轉速度與對向構件以及環狀構件的旋轉速度之間的差異大之情形中，會有阻隔空間內的氣流吝亂之虞。當阻隔空間內的氣流吝亂時，氣流的噴吹力作用於基板的上表面的處理液，基板的上表面局部性地露出，處理液在阻隔空間內飛散。因此，只要為用以區劃阻隔空間之基板、環狀構件以及對向構件同步旋轉之構成，即能抑制阻隔空間內的氣流的吝亂。In one embodiment of the present invention, the substrate processing apparatus further includes: an opposing member rotating unit that makes the opposing member and the ring-shaped member go around the vertical axis and the substrate held by the substrate holding unit Synchronous rotation. The so-called synchronous rotation refers to rotation at the same rotation speed in the same direction. In the case where the difference between the rotation speed of the substrate and the rotation speeds of the opposing member and the annular member is large, the airflow in the blocking space may be stingy. When the airflow in the barrier space is stiff, the blowing force of the airflow acts on the processing liquid on the upper surface of the substrate, and the upper surface of the substrate is partially exposed, and the processing liquid is scattered in the barrier space. Therefore, as long as the substrate, the ring member, and the opposed member that are used to partition the obstructing space are synchronously rotated, the airflow in the obstructing space can be restrained from being stingy.

在本發明的實施形態之一中，前述基板處理裝置進一步包含：複數個連結構件，係連結前述環狀構件與前述對向構件。而且，各個前述連結構件係以下述方式形成：俯視觀看時，隨著朝向前述徑方向的外側方向而朝向被前述基板保持單元保持之前述基板的旋轉方向的下流側。In one embodiment of the present invention, the substrate processing apparatus further includes a plurality of connecting members that connect the ring-shaped member and the opposing member. In addition, each of the connecting members is formed in such a manner that when viewed in plan, it faces the downstream side of the rotation direction of the substrate held by the substrate holding unit as it faces the outer direction of the radial direction.

容易於阻隔空間產生隨著朝向徑方向的外側方向而朝向旋轉方向的下游測之氣流。因此，依據此種基板處理裝置，用以連結對向構件與環狀構件之複數個連結構件各者係以俯視觀看時隨著朝向徑方向的外側方向而朝向旋轉方向的下游側之方式形成。因此，能促進產生隨著朝向徑方向的外側方向而朝向旋轉方向的下游側之氣流。因此，能更抑制阻隔空間內的氣流的吝亂。It is easy to generate an airflow in the obstructed space, which is measured toward the downstream of the rotation direction as it goes toward the outer direction of the radial direction. Therefore, according to this substrate processing apparatus, each of the plurality of connecting members for connecting the opposing member and the ring member is formed so as to face the downstream side of the rotation direction as it goes toward the radially outer direction when viewed in plan. Therefore, it is possible to promote the generation of the airflow that goes toward the downstream side of the rotation direction as it goes toward the outer direction of the radial direction. Therefore, it is possible to more suppress the stinginess of the airflow in the blocking space.

在本發明的實施形態之一中，前述基板處理裝置進一步包含：控制器，係控制前述基板旋轉單元、前述處理液供給單元、前述惰性氣體供給單元以及前述對向構件升降單元。In one embodiment of the present invention, the substrate processing apparatus further includes a controller that controls the substrate rotating unit, the processing liquid supply unit, the inert gas supply unit, and the facing member elevating unit.

而且，前述控制器係編程為執行：阻隔空間區劃工序，係藉由前述對向構件升降單元使前述對向構件以及前述環狀構件移動並區劃前述阻隔空間；氛圍置換工序，係從前述惰性氣體供給單元朝前述基板的上表面供給惰性氣體，藉此藉由惰性氣體置換前述阻隔空間內的氛圍；處理液供給工序，係在已藉由惰性氣體置換前述阻隔空間內的氛圍的狀態下，從前述處理液供給單元對前述基板的上表面供給處理液；以及處理液排出工序，係使前述基板旋轉單元旋轉前述基板，藉此將前述基板的上表面的處理液經由前述導引面以及前述處理液排出路徑排出至前述阻隔空間外。Furthermore, the aforementioned controller is programmed to execute: the blocking space division step, by using the facing member lifting unit to move the facing member and the ring member to partition the blocking space; the atmosphere replacement step is based on the inert gas The supply unit supplies an inert gas to the upper surface of the substrate, thereby replacing the atmosphere in the barrier space with the inert gas; the process liquid supply process is in a state where the atmosphere in the barrier space has been replaced by the inert gas. The processing liquid supply unit supplies the processing liquid to the upper surface of the substrate; and the processing liquid discharge step is to rotate the substrate by the substrate rotating unit, thereby passing the processing liquid on the upper surface of the substrate through the guide surface and the processing The liquid discharge path is discharged to the outside of the aforementioned blocking space.

因此，能藉由惰性氣體確實地置換阻隔空間內的氛圍。藉此，能降低阻隔空間內的氧濃度，亦即能降低基板的上表面附近的氛圍的氧濃度。而且，使基板旋轉，藉此離心力作用於存在於基板的上表面的處理液，存在於基板的上表面的處理液係能經由導引面以及處理液排出路徑確實地排出至阻隔空間外。因此，能一邊抑制處理液在阻隔空間內飛散一邊將處理液從阻隔空間內排除。因此，能抑制從基板的上表面排出的處理液從對向構件濺回並再次附著於基板的上表面。因此，能抑制於基板的上表面產生微粒。Therefore, the atmosphere in the barrier space can be reliably replaced by the inert gas. Thereby, the oxygen concentration in the barrier space can be reduced, that is, the oxygen concentration of the atmosphere near the upper surface of the substrate can be reduced. Furthermore, by rotating the substrate, centrifugal force acts on the processing liquid on the upper surface of the substrate, and the processing liquid on the upper surface of the substrate can be reliably discharged to the outside of the barrier space via the guide surface and the processing liquid discharge path. Therefore, it is possible to exclude the treatment liquid from the blocking space while suppressing the treatment liquid from scattering in the blocking space. Therefore, it is possible to prevent the processing liquid discharged from the upper surface of the substrate from being splashed back from the opposing member and attached to the upper surface of the substrate again. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

藉由以上的結果，能降低基板的上表面附近的氛圍中的氧濃度，且能抑制在基板的上表面中產生微粒。As a result of the above, the oxygen concentration in the atmosphere near the upper surface of the substrate can be reduced, and the generation of particles on the upper surface of the substrate can be suppressed.

在本發明的實施形態之一中，前述導引面係具有：傾斜面，係以隨著朝向前述徑方向的外側方向而朝向上方之方式傾斜。In one embodiment of the present invention, the guide surface has an inclined surface that is inclined so as to go upward as it goes to the outer direction of the radial direction.

而且，前述控制器係編程為執行：蓄液形成工序，係在前述處理液供給工序中對被前述基板保持單元保持之前述基板的上表面供給處理液，藉此藉由前述傾斜面與前述基板的上表面接住處理液並形成處理液的蓄液；以及　　蓄液排除工序，係在前述處理液排出工序中藉由前述基板旋轉單元使前述基板的旋轉加速並從前述基板的上表面排除前述蓄液。In addition, the controller is programmed to execute: the reservoir forming step, in which the processing liquid is supplied to the upper surface of the substrate held by the substrate holding unit in the processing liquid supply step, whereby the inclined surface and the substrate The upper surface of the processing liquid receives the processing liquid and forms the liquid storage of the processing liquid; and the liquid storage removal step is in the processing liquid discharge step, the rotation of the substrate is accelerated by the substrate rotating unit and the substrate is removed from the upper surface of the substrate. Reservoir.

依據此種基板處理裝置，對基板的上表面供給處理液，藉此能藉由傾斜面以及基板的上表面形成處理液的蓄液。因此，由於處理液未被排出至基板的外側方向，因此能藉由用以形成蓄液所需要的量的處理液來處理基板的上表面。因此，能降低處理液的消耗量。According to such a substrate processing apparatus, the processing liquid is supplied to the upper surface of the substrate, whereby a reservoir of the processing liquid can be formed by the inclined surface and the upper surface of the substrate. Therefore, since the processing liquid is not discharged to the outer direction of the substrate, the upper surface of the substrate can be processed with the amount of processing liquid required to form the reservoir. Therefore, the consumption of the treatment liquid can be reduced.

傾斜面係以隨著朝向徑方向的外側方向而朝向上方之方式傾斜。因此，使基板的旋轉加速從而使離心力作用於蓄液，藉此能使處理液順暢地躍上傾斜面。已躍上傾斜面的處理液係順暢地流入至處理液排出路徑。因此，能抑制於基板的上表面產生微粒。The inclined surface is inclined so as to go upward as it goes to the outer direction of the radial direction. Therefore, the rotation of the substrate is accelerated to cause centrifugal force to act on the liquid accumulation, thereby enabling the processing liquid to smoothly jump onto the inclined surface. The processing liquid system that has jumped onto the inclined surface smoothly flows into the processing liquid discharge path. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

本發明的另一個實施形態為一種基板處理方法，係包含：基板保持工序，係水平地保持俯視觀看時為圓形狀的基板；空間區劃工序，係使具有圓板部以及延伸設置部的對向構件以及環狀構件朝上下方向移動並藉由前述對向構件、前述環狀構件以及前述基板區劃阻隔空間，前述圓板部係具有從上方與前述基板對向之對向面，前述延伸設置部係從前述圓板部朝以通過前述基板的中央部之鉛直軸線作為中心之徑方向的外側方向延伸，前述環狀構件係俯視觀看時圍繞前述基板，前述阻隔空間係限制了來自外部的氛圍的流入；氛圍置換工序，係朝前述阻隔空間供給惰性氣體，藉此藉由惰性氣體置換前述阻隔空間內的氛圍；處理液供給工序，係在已藉由惰性氣體置換前述阻隔空間內的氛圍的狀態下，對前述基板的上表面供給處理液；以及處理液排出工序，係在前述基板的上表面存在處理液的狀態下使前述基板繞著前述鉛直軸線的旋轉方向旋轉，藉此將存在於前述基板的上表面的周緣部的處理液經由設置於前述環狀構件的導引面導引至被前述延伸設置部與前述環狀構件區劃的處理液排出路徑，並將處理液從前述處理液排出路徑朝前述阻隔空間外排出。Another embodiment of the present invention is a substrate processing method, which includes: a substrate holding step of horizontally holding a circular substrate in a plan view; a space division step of opposing a circular plate portion and an extended portion The member and the ring-shaped member move in the up-down direction and the blocking space is partitioned by the opposed member, the ring-shaped member, and the substrate, the disc portion has an opposing surface facing the substrate from above, and the extension portion It extends from the circular plate portion toward the outer direction of the radial direction centered on the vertical axis passing through the center portion of the substrate. The ring-shaped member surrounds the substrate when viewed from above, and the barrier space restricts the atmosphere from the outside. Inflow; the atmosphere replacement step is to supply an inert gas to the barrier space, thereby replacing the atmosphere in the barrier space with the inert gas; the processing liquid supply step is in a state where the atmosphere in the barrier space has been replaced by an inert gas Next, the processing liquid is supplied to the upper surface of the substrate; and the processing liquid discharge step is to rotate the substrate around the rotation direction of the vertical axis in the state where the processing liquid exists on the upper surface of the substrate, thereby making the substrate present in the The processing liquid on the peripheral edge portion of the upper surface of the substrate is guided to the processing liquid discharge path partitioned by the extension portion and the annular member via the guide surface provided on the annular member, and the processing liquid is discharged from the processing liquid The path is discharged to the outside of the aforementioned blocking space.

依據此種基板處理方法，使環狀構件以及對向構件一起升降，藉此藉由基板、對向構件以及環狀構件區劃阻隔空間。在區劃了阻隔空間的狀態下朝基板的上表面供給惰性氣體，藉此能藉由惰性氣體置換阻隔空間內的氛圍。藉此，能降低阻隔空間內的氧濃度，亦即能降低基板的上表面附近的氛圍的氧濃度。由於阻隔空間係限制氛圍從外部的空間流入，因此當阻隔空間內的氛圍被一次性地置換成惰性氣體時，容易維持在阻隔空間內的氛圍中的氧濃度已被降低的狀態。According to this substrate processing method, the ring-shaped member and the opposite member are raised and lowered together, whereby the blocking space is partitioned by the substrate, the opposite member, and the ring-shaped member. The inert gas is supplied to the upper surface of the substrate in a state where the barrier space is divided, whereby the atmosphere in the barrier space can be replaced by the inert gas. Thereby, the oxygen concentration in the barrier space can be reduced, that is, the oxygen concentration of the atmosphere near the upper surface of the substrate can be reduced. Since the barrier space restricts the inflow of atmosphere from the external space, when the atmosphere in the barrier space is replaced with an inert gas at one time, it is easy to maintain a state where the oxygen concentration in the atmosphere in the barrier space has been reduced.

在阻隔空間內的氛圍已被置換成惰性氣體的狀態下對基板的上表面供給處理液，藉此能一邊抑制處理液中的氧濃度的上升一邊藉由處理液處理基板的上表面。Supplying the processing liquid to the upper surface of the substrate in a state where the atmosphere in the barrier space has been replaced with an inert gas, the upper surface of the substrate can be processed by the processing liquid while suppressing an increase in the oxygen concentration in the processing liquid.

存在於基板的上表面的處理液係接受基板旋轉所致使的離心力而從基板的上表面的周緣部移動並經由導引面被導引至處理液排出路徑。被導引至處理液排出路徑的處理液係被排出至阻隔空間外。由於在基板的周緣部與處理液排出路徑之間存在導引面，因此基板的周緣部係從對向構件的延伸設置部充分地離開。因此，能抑制從基板的上表面排出的處理液從對向構件濺回並再次附著於基板的上表面。假設即使從基板的上表面排出的處理液從對向構件濺回，濺回的處理液的大部分亦會附著於比基板的上表面還更位於徑方向的外側方向的導引面。因此，能抑制處理液再次附著於基板的上表面。因此，能抑制於基板的上表面產生微粒。The processing liquid present on the upper surface of the substrate receives centrifugal force caused by the rotation of the substrate, moves from the peripheral portion of the upper surface of the substrate, and is guided to the processing liquid discharge path via the guide surface. The processing liquid system guided to the processing liquid discharge path is discharged to the outside of the blocking space. Since there is a guide surface between the peripheral edge portion of the substrate and the processing liquid discharge path, the peripheral edge portion of the substrate is sufficiently separated from the extended portion of the opposing member. Therefore, it is possible to prevent the processing liquid discharged from the upper surface of the substrate from being splashed back from the opposing member and attached to the upper surface of the substrate again. It is assumed that even if the processing liquid discharged from the upper surface of the substrate splashes back from the opposing member, most of the splashed processing liquid adheres to the guide surface located in the radially outer direction than the upper surface of the substrate. Therefore, it is possible to prevent the processing liquid from reattaching to the upper surface of the substrate. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

藉由以上的結果，能降低基板的上表面附近的氛圍中的氧濃度，且能抑制基板的上表面中的微粒的產生。As a result of the above, the oxygen concentration in the atmosphere near the upper surface of the substrate can be reduced, and the generation of particles on the upper surface of the substrate can be suppressed.

在本發明的其他的實施形態中，前述處理液排出路徑的寬度係比鉛直方向中的前述阻隔空間的寬度還小。因此，能通過處理液排出路徑之流體的流量為較小的流量。因此，能抑制在處理液經由處理液排出路徑排出至阻隔空間外之期間阻隔空間外的氛圍經由處理液排出路徑流入。因此，能一邊抑制處理液中的氧濃度的上升一邊藉由處理液處理基板的上表面。In another embodiment of the present invention, the width of the processing liquid discharge path is smaller than the width of the blocking space in the vertical direction. Therefore, the flow rate of the fluid that can pass through the treatment liquid discharge path is a small flow rate. Therefore, it is possible to suppress the inflow of the atmosphere outside the barrier space through the process liquid discharge path while the process liquid is discharged to the outside of the barrier space through the process liquid discharge path. Therefore, the upper surface of the substrate can be processed by the processing liquid while suppressing the increase in the oxygen concentration in the processing liquid.

在本發明的其他的實施形態中，前述環狀構件係具有：排出路徑區劃面，係連結於前述徑方向中的前述導引面的外側方向端，並區劃前述處理液排出路徑。而且，前述處理液排出路徑係於前述導引面與前述排出路徑區劃面之間的交界具有流入口。In another embodiment of the present invention, the ring-shaped member has a discharge path partition surface connected to an outer direction end of the guide surface in the radial direction, and partitions the processing liquid discharge path. In addition, the processing liquid discharge path has an inflow port at the boundary between the guide surface and the discharge path partition surface.

依據此種基板處理方法，處理液排出路徑的流入口係設置於連結於徑方向中的導引面的外側方向端之排出路徑區劃面與導引面之間的交界。因此，處理液中的逆流的產生部位為導引面上而非是基板的上表面上。因此，能抑制於基板上的處理液中產生逆流。因此，能抑制於基板的上表面產生微粒。According to this substrate processing method, the inflow port of the processing liquid discharge path is provided at the boundary between the discharge path partition surface connected to the outer direction end of the guide surface in the radial direction and the guide surface. Therefore, the backflow in the treatment liquid is generated on the guide surface instead of on the upper surface of the substrate. Therefore, it is possible to suppress the occurrence of backflow in the processing liquid on the substrate. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

在本發明的其他的實施形態中，前述排出路徑區劃面以及前述導引面係構成於水平方向平坦的單一個平坦面。依據此種基板處理方法，導引面與排出路徑區劃面之間無段差且導引面與排出路徑區劃面構成於水平方向平坦的單一個平坦面。因此，能使於導引面上流動的處理液順暢地流入至處理液排出路徑。因此，能抑制處理液在阻隔空間內飛散，從而能抑制因為處理液的飛散導致產生微粒。In another embodiment of the present invention, the discharge path dividing surface and the guide surface are formed on a single flat surface that is flat in the horizontal direction. According to this substrate processing method, there is no step difference between the guide surface and the discharge path partition surface, and the guide surface and the discharge path partition surface constitute a single flat surface that is flat in the horizontal direction. Therefore, the processing liquid flowing on the guide surface can smoothly flow into the processing liquid discharge path. Therefore, it is possible to prevent the treatment liquid from scattering in the barrier space, and it is possible to suppress the generation of particles due to the scattering of the treatment liquid.

在本發明的其他的實施形態中，前述基板處理方法進一步包含：同步旋轉工序，係在前述處理液排出工序中使前述環狀構件以及前述對向構件繞著前述鉛直軸線與前述基板同步旋轉。因此，能抑制阻隔空間內的氣流的吝亂。In another embodiment of the present invention, the substrate processing method further includes a synchronous rotation step in which the annular member and the opposing member are rotated in synchronization with the substrate around the vertical axis in the processing liquid discharge step. Therefore, it is possible to suppress the stinginess of the airflow in the blocking space.

在本發明的其他的實施形態中，前述環狀構件與前述對向構件係藉由連結構件而連結。而且，前述連結構件係以下述方式形成：俯視觀看時，隨著朝向前述徑方向的外側方向而朝向前述基板的旋轉方向的下流側。因此，能促進產生隨著朝向徑方向的外側方向而朝向旋轉方向的下游側之氣流。因此，能更抑制阻隔空間內的氣流的吝亂。In another embodiment of the present invention, the annular member and the opposing member are connected by a connecting member. In addition, the connecting member is formed in such a manner that, in a plan view, it faces the downstream side of the rotation direction of the substrate as it faces the outer direction of the radial direction. Therefore, it is possible to promote the generation of the airflow that goes toward the downstream side of the rotation direction as it goes toward the outer direction of the radial direction. Therefore, it is possible to more suppress the stinginess of the airflow in the blocking space.

在本發明的其他的實施形態中，前述導引面係具有：傾斜面，係以隨著朝向前述徑方向的外側方向而朝向上方之方式傾斜。前述處理液供給工序係包含：蓄液形成工序，係對前述基板的上表面供給處理液，藉此藉由前述傾斜面與前述基板的上表面接住處理液並形成處理液的蓄液。而且，前述處理液排出工序係包含：蓄液排除工序，係使前述基板的旋轉加速並從前述基板的上表面排除前述蓄液。In another embodiment of the present invention, the guide surface has an inclined surface that is inclined so as to go upward as it goes to the outer direction of the radial direction. The process liquid supply step includes a reservoir forming process of supplying a process liquid to the upper surface of the substrate, whereby the inclined surface and the upper surface of the substrate catch the process liquid to form a reservoir of the process liquid. In addition, the process liquid discharge step includes a reservoir liquid removal step of accelerating the rotation of the substrate and removing the reservoir liquid from the upper surface of the substrate.

依據此種基板處理方法，對基板的上表面供給處理液，藉此能藉由傾斜面以及基板的上表面形成處理液的蓄液。因此，由於處理液未被排出至基板的外側方向，因此能藉由用以形成蓄液所需要的量的處理液來處理基板的上表面。因此，能降低處理液的消耗量。According to this substrate processing method, the processing liquid is supplied to the upper surface of the substrate, whereby a reservoir of the processing liquid can be formed by the inclined surface and the upper surface of the substrate. Therefore, since the processing liquid is not discharged to the outer direction of the substrate, the upper surface of the substrate can be processed with the amount of processing liquid required to form the reservoir. Therefore, the consumption of the treatment liquid can be reduced.

傾斜面係以隨著朝向徑方向的外側方向而朝向上方之方式傾斜。因此，使基板的旋轉加速從而使離心力作用於蓄液，藉此能使處理液順暢地躍上傾斜面。已躍上傾斜面的處理液係順暢地流入至處理液排出路徑。因此，能抑制於基板的上表面產生微粒。The inclined surface is inclined so as to go upward as it goes to the outer direction of the radial direction. Therefore, the rotation of the substrate is accelerated to cause centrifugal force to act on the liquid accumulation, thereby enabling the processing liquid to smoothly jump onto the inclined surface. The processing liquid system that has jumped onto the inclined surface smoothly flows into the processing liquid discharge path. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

在本發明的其他的實施形態中，前述徑方向中的前述環狀構件的內側方向端面係朝鉛直方向延伸。前述內側方向端面的上端部係連結於前述導引面。而且，前述處理液供給工序係包含：蓄液形成工序，係以前述環狀構件的前述內側方向端面的前述上端部位於比前述基板的上表面還更上方之方式已使前述環狀構件移動的狀態下朝前述基板的上表面供給處理液，藉此藉由前述環狀構件的前述內側方向端面與前述基板的上表面接住處理液並形成處理液的蓄液。前述處理液排出工序係包含：蓄液排除工序，係以前述環狀構件的前述內側方向端面的前述上端部位於與前述基板的上表面相同的高度之方式使前述環狀構件移動，藉此從前述基板的上表面排除前述蓄液。In another embodiment of the present invention, the inner end surface of the annular member in the radial direction extends in the vertical direction. The upper end of the inner end surface is connected to the guide surface. Furthermore, the process liquid supply step includes: a reservoir forming step in which the ring member is moved so that the upper end portion of the inner end surface of the ring member is located above the upper surface of the substrate In the state, the processing liquid is supplied to the upper surface of the substrate, whereby the inner end surface of the ring member and the upper surface of the substrate catch the processing liquid and form a reservoir of the processing liquid. The process liquid discharge step includes: a liquid accumulation removal step of moving the ring member so that the upper end portion of the inner side end surface of the ring member is at the same height as the upper surface of the substrate. The upper surface of the substrate removes the liquid accumulation.

依據此種基板處理方法，對基板的上表面供給處理液，藉此能藉由環狀構件的內側方向端面以及基板的上表面形成處理液的蓄液。因此，藉由蓄液中的處理液處理基板的上表面。因此，只要將形成蓄液所需要的量的處理液供給至基板的上表面即能處理基板的上表面。因此，與供給至基板的上表面的處理液未被內側方向端面接住而是被排出至基板外之構成相比，能降低處理液的消耗量。According to this substrate processing method, by supplying the processing liquid to the upper surface of the substrate, it is possible to form a reservoir of the processing liquid by the inner end surface of the ring member and the upper surface of the substrate. Therefore, the upper surface of the substrate is processed by the processing liquid in the reservoir. Therefore, the upper surface of the substrate can be processed as long as the processing liquid in the amount required to form the reservoir is supplied to the upper surface of the substrate. Therefore, compared with a configuration in which the processing liquid supplied to the upper surface of the substrate is discharged to the outside of the substrate without being caught by the inner end surface, the consumption of the processing liquid can be reduced.

當以環狀構件的內側方向端面的上端部位於與基板的上表面相同的高度位置之方式使環狀構件移動時，處理液從內側方向端面所為的液體接住狀態被解放。因此，能使存在於基板的上表面的處理液順暢地流入至處理液排出路徑。因此，能抑制於基板的上表面產生微粒。When the ring member is moved so that the upper end of the inner end surface of the ring member is at the same height position as the upper surface of the substrate, the liquid receiving state of the processing liquid from the inner end surface is released. Therefore, the processing liquid existing on the upper surface of the substrate can smoothly flow into the processing liquid discharge path. Therefore, it is possible to suppress the generation of particles on the upper surface of the substrate.

在本發明的其他的實施形態中，前述基板處理方法進一步包含：防護罩(guard)移動工序，係使包含第一圓筒部與第一圓環部之第一防護罩以及包含第二圓筒部與第二圓環部之第二防護罩個別地上下動作，前述第一圓筒部係俯視觀看時圍繞前述對向構件以及前述環狀構件，前述第一圓環部係從前述第一圓筒部朝前述徑方向的內側方向延伸，前述第二圓筒部係俯視觀看時圍繞前述對向構件以及前述環狀構件，前述第二圓環部係從前述第二圓筒部朝前述徑方向的內側方向延伸並從下方與前述第一圓環部對向。前述處理液排出路徑係具有：排出口，係朝前述徑方向的外側方向排出處理液。而且，前述防護罩移動工序係包含下述工序：在從前述排出口排出處理液時，在鉛直方向中以前述處理液排出路徑位於前述徑方向中的前述第一圓環部的內側方向端與前述徑方向中的前述第二圓環部的內側方向端之間之方式使前述第一防護罩以及前述第二防護罩移動。In other embodiments of the present invention, the aforementioned substrate processing method further includes: a guard moving step of making a first guard including a first cylindrical portion and a first annular portion and a second cylindrical Part and the second protective cover of the second ring part move up and down separately. The first cylindrical part surrounds the opposing member and the ring member when viewed from above, and the first ring part starts from the first ring. The cylindrical portion extends toward the inner side of the radial direction, the second cylindrical portion surrounds the opposed member and the annular member in plan view, and the second annular portion extends from the second cylindrical portion toward the radial direction It extends in the inner direction and faces the first annular portion from below. The processing liquid discharge path has a discharge port for discharging the processing liquid in the outer direction of the radial direction. Furthermore, the protective cover moving step includes the following step: when the processing liquid is discharged from the discharge port, the processing liquid discharge path is located in the vertical direction with the inner direction end of the first annular portion in the radial direction and The first protective cover and the second protective cover are moved between the inner ends of the second annular portion in the radial direction.

依據此種基板處理方法，在從排出口排出處理液時，第二防護罩的第二圓環部係在鉛直方向中位於比排出口還更下側。因此，從第一防護罩濺回的處理液係不會朝比第二防護罩還更徑方向的內側方向移動而是附著於第二防護罩。因此，能抑制從第一防護罩濺回的處理液附著於基板的下表面。According to this substrate processing method, when the processing liquid is discharged from the discharge port, the second annular portion of the second protective cover is positioned below the discharge port in the vertical direction. Therefore, the treatment liquid system splashed back from the first protective cover does not move in a radially inner direction than the second protective cover, but adheres to the second protective cover. Therefore, it is possible to prevent the processing liquid splashed back from the first protective cover from adhering to the lower surface of the substrate.

在本發明的實施形態中，前述基板處理方法進一步包含：保護液供給工序，係與前述處理液排出工序並行地執行，用以朝前述基板的下表面供給用以保護前述基板的下表面之保護液。而且，前述防護罩移動工序係包含下述工序：以前述第二圓環部的徑方向內側方向端位於比前述排出口還更下側且比前述環狀構件的下端還更上側之方式使前述第二防護罩移動。In the embodiment of the present invention, the substrate processing method further includes: a protection liquid supply step, which is performed in parallel with the processing liquid discharge step, and is used to supply a protection for protecting the lower surface of the substrate to the lower surface of the substrate. liquid. In addition, the protective cover moving step includes the step of making the radially inner end of the second annular portion lower than the discharge port and higher than the lower end of the annular member. The second protective cover moves.

依據此種基板處理方法，與處理液排出工序並行地朝基板的下表面供給保護液。因此，即使在處理液的霧氣(mist)越過第二防護罩到達至基板的下表面附近之情形中，亦能保護基板的下表面不受該霧氣的影響。According to this substrate processing method, the protection liquid is supplied to the lower surface of the substrate in parallel with the processing liquid discharge step. Therefore, even in the case where the mist of the treatment liquid passes over the second protective cover and reaches the vicinity of the lower surface of the substrate, the lower surface of the substrate can be protected from the mist.

再者，第二防護罩係以徑方向中的第二圓環部的內側方向端位於比排出口還更下方且比環狀構件的下端還更上方之方式移動。因此，能使第二防護罩接住從基板的下表面排出至外側方向的保護液。亦即，能使第一防護罩接住從基板的上表面排出的處理液且能使第二防護罩接住從基板的下表面排出至外側方向的保護液。因此，能避免從基板排出的處理液與保護液的混合。從而，能不使處理液以及保護液混合地回收處理液以及保護液。Furthermore, the second shield moves in such a manner that the inner direction end of the second annular portion in the radial direction is located below the discharge port and above the lower end of the ring member. Therefore, the second protective cover can catch the protective liquid discharged from the lower surface of the substrate to the outer direction. That is, the first protective cover can catch the processing liquid discharged from the upper surface of the substrate, and the second protective cover can catch the protective liquid discharged from the lower surface of the substrate to the outside. Therefore, mixing of the processing liquid discharged from the substrate and the protection liquid can be avoided. Therefore, the processing liquid and the protection liquid can be recovered without mixing the processing liquid and the protection liquid.

在本發明的其他的實施形態中，前述基板處理方法進一步包含：預清洗(prerinse)工序，係在前述處理液供給工序之前對前述基板的上表面供給清洗(rinse)液。在前述預清洗工序中供給至前述基板的上表面的清洗液係塞住前述環狀構件與前述基板之間的間隙並從前述處理液排出路徑排出。而且，前述預清洗工序係與前述氛圍置換工序並行地執行。In another embodiment of the present invention, the substrate processing method further includes a prerinse step of supplying a rinse liquid to the upper surface of the substrate before the processing liquid supply step. The cleaning liquid supplied to the upper surface of the substrate in the pre-cleaning step closes the gap between the annular member and the substrate and is discharged from the processing liquid discharge path. Furthermore, the aforementioned pre-cleaning step is performed in parallel with the aforementioned atmosphere replacement step.

環狀構件與基板之間的間隙係被清洗液塞住。因此，抑制惰性氣體經由該間隙移動。此外，清洗液係經由處理液排出路徑從阻隔空間朝外部的空間排出。因此，只要未作用壓退處理液排出路徑內的清洗液這種程度的大的力量，即不會導致氛圍經由處理液排出路徑朝阻隔空間流入。另一方面，由於對阻隔空間供給惰性氣體，因此阻隔空間內的空氣係與清洗液一起經由處理液排出路徑被排出至外部的空間，以使阻隔空間內的壓力不會過度上升。The gap between the ring member and the substrate is blocked by the cleaning liquid. Therefore, the inert gas is suppressed from moving through the gap. In addition, the cleaning liquid is discharged from the blocking space to the outside space via the processing liquid discharge path. Therefore, as long as a large force of such a degree as to suppress the cleaning liquid in the treatment liquid discharge path is not applied, the atmosphere will not flow into the obstructed space through the treatment liquid discharge path. On the other hand, since the inert gas is supplied to the barrier space, the air in the barrier space is discharged to the external space through the processing liquid discharge path together with the cleaning liquid, so that the pressure in the barrier space does not increase excessively.

因此，能更限制氛圍從外部的空間朝阻隔空間流入，並能將阻隔空間內的氛圍置換成惰性氣體。Therefore, the inflow of the atmosphere from the external space into the barrier space can be more restricted, and the atmosphere in the barrier space can be replaced with an inert gas.

參照隨附的圖式並藉由下述實施形態的說明而能更明瞭本發明的上面所說明的目的以及其他的目的、特徵以及功效。With reference to the attached drawings and the description of the following embodiments, the above-described object and other objects, features, and effects of the present invention can be more clarified.

[第一實施形態][First Embodiment]

圖1係顯示本發明的第一實施形態的基板處理裝置1的佈局之示意性的俯視圖。FIG. 1 is a schematic plan view showing the layout of a substrate processing apparatus 1 according to the first embodiment of the present invention.

基板處理裝置1為葉片式的裝置，用以逐片地處理矽晶圓等基板W。在本實施形態中，基板W為圓板狀的基板。The substrate processing device 1 is a blade-type device for processing substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disc-shaped substrate.

基板處理裝置1係包含：複數個處理單元2，係藉由流體處理基板W；裝載埠(load port)LP，係載置有承載器(carrier)C，該承載器C係收容將在處理單元2進行處理的複數片基板W；搬運機器人IR、CR，係在裝載埠LP與處理單元2之間搬運基板W；以及控制器3，係控制基板處理裝置1。The substrate processing apparatus 1 includes: a plurality of processing units 2 for processing a substrate W by fluid; a load port LP is mounted with a carrier C, and the carrier C is accommodated in the processing unit 2. A plurality of substrates W to be processed; transport robots IR and CR, which transport the substrate W between the load port LP and the processing unit 2; and a controller 3, which controls the substrate processing apparatus 1.

搬運機器人IR係在承載器C與搬運機器人CR之間搬運基板W。搬運機器人CR係在搬運機器人IR與處理單元2之間搬運基板W。複數個處理單元2係例如具有同樣的構成。在處理單元2內被供給至基板W之處理液係包括藥液、清洗液、置換液等，將於後面詳細說明。The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plural processing units 2 have the same configuration, for example. The processing liquid system supplied to the substrate W in the processing unit 2 includes a chemical liquid, a cleaning liquid, a replacement liquid, etc., which will be described in detail later.

各個處理單元2係具備腔室(chamber)4以及配置於腔室4內的處理罩(processing cup)7，並在處理罩7內執行對於基板W的處理。於腔室4形成有出入口(未圖示)，該出入口係用以使搬運機器人CR搬入基板W以及搬出基板W。腔室4係具備有用以將出入口予以開閉之擋門(shutter)單元(未圖示)。Each processing unit 2 includes a chamber 4 and a processing cup 7 arranged in the chamber 4, and processes the substrate W in the processing cup 7. An entrance (not shown) is formed in the chamber 4 for carrying the substrate W in and carrying out the substrate W by the transfer robot CR. The chamber 4 is provided with a shutter unit (not shown) for opening and closing the entrance and exit.

圖2係用以說明處理單元2的構成例之示意圖。處理單元2係包含自轉夾具5、對向構件6、處理罩7、環狀構件8、中央噴嘴11、複數個第一下表面噴嘴12以及複數個第二下表面噴嘴13。FIG. 2 is a schematic diagram for explaining a configuration example of the processing unit 2. The processing unit 2 includes a rotation jig 5, a facing member 6, a processing cover 7, an annular member 8, a center nozzle 11, a plurality of first lower surface nozzles 12 and a plurality of second lower surface nozzles 13.

自轉夾具5係一邊水平地保持基板W一邊使基板W繞著通過基板W的中央部之鉛直的旋轉軸線A1(鉛直軸線)旋轉。自轉夾具5係包含自轉基座(spin base)21、旋轉軸22以及自轉馬達(spin motor)23，自轉馬達23係對旋轉軸22賦予旋轉力。旋轉軸22為中空軸。旋轉軸22係沿著旋轉軸線A1朝鉛直方向延伸。旋轉軸線A1為通過基板W的中央部之鉛直軸線。於旋轉軸22的上端結合有自轉基座21。自轉基座21係外嵌於旋轉軸22的上端。俯視觀看時自轉基座21的上表面為圓形狀。自轉基座21的上表面的直徑係比基板W的直徑還小。The rotation jig 5 rotates the substrate W around the vertical rotation axis A1 (vertical axis) passing through the center of the substrate W while holding the substrate W horizontally. The rotation jig 5 includes a spin base 21, a rotating shaft 22, and a spin motor 23, and the spin motor 23 applies a rotational force to the rotating shaft 22. The rotating shaft 22 is a hollow shaft. The rotation shaft 22 extends in the vertical direction along the rotation axis A1. The rotation axis A1 is a vertical axis passing through the center of the substrate W. A rotation base 21 is connected to the upper end of the rotating shaft 22. The rotation base 21 is externally embedded on the upper end of the rotating shaft 22. The upper surface of the rotation base 21 has a circular shape when viewed from above. The diameter of the upper surface of the rotation base 21 is smaller than the diameter of the substrate W.

自轉夾具5係進一步包含：吸引單元27，係吸引配置於自轉基座21的上表面的基板W，從而使自轉基座21保持基板W。The rotation jig 5 further includes a suction unit 27 that sucks the substrate W arranged on the upper surface of the rotation base 21 so that the rotation base 21 holds the substrate W.

於自轉基座21以及旋轉軸22插通有吸引路徑25。吸引路徑25係具有從自轉基座21的上表面的中心露出之吸引口24。吸引路徑25係連結於吸引管26。吸引管26係連接於真空泵等吸引單元27。於吸引管26夾設有用以將吸引管26的路徑予以開閉之吸引閥28。A suction path 25 is inserted through the rotation base 21 and the rotating shaft 22. The suction path 25 has a suction port 24 exposed from the center of the upper surface of the rotation base 21. The suction path 25 is connected to the suction tube 26. The suction pipe 26 is connected to a suction unit 27 such as a vacuum pump. A suction valve 28 for opening and closing the path of the suction pipe 26 is sandwiched between the suction pipe 26.

自轉夾具5為基板保持單元的一例，用以水平地保持基板W。能使用未圖示的偏心感測器將基板W配置於自轉基座21上的正確的位置。The rotation jig 5 is an example of a substrate holding unit for holding the substrate W horizontally. The substrate W can be arranged at the correct position on the rotation base 21 using an eccentric sensor not shown.

藉由自轉馬達23使旋轉軸22旋轉，藉此旋轉自轉基座21。藉此，基板W係與自轉基座21一起繞著旋轉軸線A1旋轉。自轉馬達23為基板旋轉單元的一例，用以使基板W繞著旋轉軸線A1旋轉。The rotation shaft 22 is rotated by the rotation motor 23 to thereby rotate the rotation base 21. Thereby, the substrate W rotates about the rotation axis A1 together with the rotation base 21. The rotation motor 23 is an example of a substrate rotating unit for rotating the substrate W around the rotation axis A1.

以下將以旋轉軸線A1作為中心之徑方向的內側方向稱為「徑方向內側方向」，將以旋轉軸線A1作為中心之徑方向的外側方向稱為「徑方向外側方向」。Hereinafter, the inner direction of the radial direction with the rotation axis A1 as the center is referred to as the "radial inner direction", and the outer direction of the radial direction with the rotation axis A1 as the center is referred to as the "radial outer direction".

對向構件6係包含：圓板部65，係從上方與被自轉夾具5保持之基板W對向；以及凸緣(flange)狀(圓筒狀)的延伸設置部66，係從圓板部65朝徑方向外側方向延伸。The opposing member 6 includes: a circular plate portion 65 opposed to the substrate W held by the rotation jig 5 from above; and a flange-shaped (cylindrical) extension portion 66 from the circular plate portion 65 extends radially outward.

圓板部65係形成為圓板狀，具有與基板W大致相同的直徑或者基板W的直徑以上的直徑。圓板部65係具有與基板W的上表面(上側的表面)對向之對向面6a。對向面6a係在比自轉夾具5還更上方沿著大致水平方向配置。The disc portion 65 is formed in a disc shape, and has a diameter substantially the same as that of the substrate W or a diameter greater than or equal to the diameter of the substrate W. The disc portion 65 has a facing surface 6a facing the upper surface (the upper surface) of the substrate W. The facing surface 6a is arranged in a substantially horizontal direction above the rotation jig 5.

由於延伸設置部66係從圓板部65朝徑方向外側方向延伸，因此位於比基板W的周緣還更徑方向外側方向。Since the extension portion 66 extends from the circular plate portion 65 in the radially outer direction, it is located in the radially outer direction than the peripheral edge of the substrate W.

於圓板部65中之對向面6a的相反側固定有中空軸60。於圓板部65中之俯視觀看時與旋轉軸線A1重疊之部分形成有連通孔6b，連通孔6b係上下地貫通圓板部65並與中空軸60的內部空間連通。A hollow shaft 60 is fixed to the opposite side of the facing surface 6a in the circular plate portion 65. A communication hole 6 b is formed in the portion of the circular plate portion 65 that overlaps the rotation axis A1 in a plan view. The communication hole 6 b penetrates the circular plate portion 65 up and down and communicates with the inner space of the hollow shaft 60.

中央噴嘴11係收容於對向構件6的中空軸60的內部空間。設置於中央噴嘴11的前端的噴出口11a係從上方與基板W的上表面的中央區域對向。所謂基板W的上表面的中央區域係指基板W的上表面中之包含基板W的旋轉中心及其周圍之區域。The central nozzle 11 is housed in the internal space of the hollow shaft 60 of the opposing member 6. The ejection port 11a provided at the tip of the central nozzle 11 is opposed to the central area of the upper surface of the substrate W from above. The so-called central area of the upper surface of the substrate W refers to the area of the upper surface of the substrate W including the center of rotation of the substrate W and its surroundings.

中央噴嘴11係包含：複數個管部(tube)(第一管部31、第二管部32、第三管部33以及第四管部34)，係朝下方噴出流體；以及筒狀的殼體(casing)30，係圍繞複數個管部。殼體30以及複數個管部係沿著旋轉軸線A1朝上下方向延伸。中央噴嘴11的噴出口11a亦為各個管部的噴出口。The central nozzle 11 includes: a plurality of tubes (the first tube 31, the second tube 32, the third tube 33, and the fourth tube 34), which eject fluid downward; and a cylindrical shell The casing 30 is around a plurality of tubes. The housing 30 and the plurality of pipes extend in the vertical direction along the rotation axis A1. The ejection port 11a of the central nozzle 11 is also the ejection port of each pipe part.

第一管部31(中央噴嘴11)為藥液供給單元的一例，用以將DHF(dilute hydrofluoric acid；稀釋氫氟酸)等藥液供給至基板W的上表面。第二管部32(中央噴嘴11)為清洗液供給單元的一例，用以將DIW(deionized water；去離子水)等清洗液供給至基板W的上表面。第三管部33(中央噴嘴11)為置換液供給單元的一例，用以將IPA(isopropyl alcohol；異丙醇)等置換液供給至基板W的上表面。亦即，中央噴嘴11為處理液供給單元的一例，用以將藥液、清洗液、置換液等處理液供給至基板W的上表面。The first pipe portion 31 (central nozzle 11) is an example of a chemical liquid supply unit, and is used to supply chemical liquids such as DHF (dilute hydrofluoric acid) to the upper surface of the substrate W. The second pipe portion 32 (central nozzle 11) is an example of a cleaning liquid supply unit for supplying cleaning liquid such as DIW (deionized water) to the upper surface of the substrate W. The third pipe portion 33 (central nozzle 11) is an example of a replacement liquid supply unit for supplying replacement liquid such as IPA (isopropyl alcohol) to the upper surface of the substrate W. That is, the central nozzle 11 is an example of a processing liquid supply unit for supplying processing liquids such as a chemical liquid, a cleaning liquid, and a replacement liquid to the upper surface of the substrate W.

第四管部34(中央噴嘴11)為惰性氣體供給單元的一例，用以朝基板W的上表面供給氮氣等惰性氣體。The fourth pipe portion 34 (central nozzle 11) is an example of an inert gas supply unit for supplying an inert gas such as nitrogen to the upper surface of the substrate W.

第一管部31係連接於藥液配管40，藥液配管40係用以將藥液導引至第一管部31。當打開夾設於藥液配管40的藥液閥50時，從第一管部31(中央噴嘴11)以連續流動之方式朝基板W的上表面的中央區域噴出藥液。The first pipe portion 31 is connected to the medical solution pipe 40, and the medical solution pipe 40 is used to guide the medical solution to the first pipe portion 31. When the chemical liquid valve 50 interposed between the chemical liquid pipe 40 is opened, the chemical liquid is sprayed from the first pipe portion 31 (central nozzle 11) toward the center area of the upper surface of the substrate W in a continuous flow.

從第一管部31噴出的藥液並未限定於DHF。亦即，從第一管部31噴出的藥液亦可為包含硫酸、醋酸、硝酸、鹽酸、氫氟酸、氨水、過氧化氫水、有機酸(例如檸檬酸、草酸等)、有機鹼(例如TMAH(tetramethyl ammonium hydroxide；氫氧化四甲銨)等)、界面活性劑以及防腐蝕劑中的至少一者的液體。作為混合了這些液體的藥液的例子，能例舉SPM(sulfuric acid / hydrogen peroxide mixture；硫酸過氧化氫混合液)、SC1(Standard clean-1；第一標準清洗液；亦即氨水過氧化氫混和液(ammonia-hydrogen peroxide mixture))等。The chemical liquid ejected from the first tube portion 31 is not limited to DHF. That is, the chemical liquid sprayed from the first pipe portion 31 may contain sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acid (such as citric acid, oxalic acid, etc.), organic alkali ( For example, a liquid of at least one of TMAH (tetramethyl ammonium hydroxide; tetramethyl ammonium hydroxide, etc.), a surfactant, and an anticorrosive agent. As an example of a chemical solution mixed with these liquids, SPM (sulfuric acid / hydrogen peroxide mixture), SC1 (Standard clean-1; the first standard cleaning solution; that is, ammonia hydrogen peroxide) can be cited. Mixture (ammonia-hydrogen peroxide mixture) and so on.

第二管部32係連接於上側清洗液配管41，上側清洗液配管41係用以將清洗液導引至第二管部32。當打開夾設於上側清洗液配管41的上側清洗液閥51時，從第二管部32(中央噴嘴11)以連續流動之方式朝基板W的上表面的中央區域噴出清洗液。The second pipe portion 32 is connected to the upper cleaning liquid pipe 41, and the upper cleaning liquid pipe 41 is used to guide the cleaning liquid to the second pipe portion 32. When the upper cleaning liquid valve 51 interposed between the upper cleaning liquid pipe 41 is opened, the cleaning liquid is sprayed from the second pipe portion 32 (central nozzle 11) toward the center area of the upper surface of the substrate W in a continuous flow.

作為清洗液，能例舉DIW、碳酸水、電解離子水、稀釋濃度(例如1ppm至100ppm左右)的鹽酸水、稀釋濃度(例如1ppm至100ppm左右)的氨水、還原水(氫水)等。As the cleaning liquid, DIW, carbonated water, electrolyzed ionized water, hydrochloric acid water with a dilution concentration (for example, about 1 ppm to 100 ppm), ammonia water with a dilution concentration (for example, about 1 ppm to 100 ppm), reduced water (hydrogen water), etc. can be exemplified.

第三管部33係連接於上側置換液配管42，上側置換液配管42係用以將置換液導引至第三管部33。當打開夾設於上側置換液配管42的上側置換液閥52打開時，從第三管部33(中央噴嘴11)以連續流動之方向朝基板W的上表面的中央區域噴出置換液。The third pipe portion 33 is connected to the upper replacement liquid pipe 42, and the upper replacement liquid pipe 42 is used to guide the replacement liquid to the third pipe portion 33. When the upper replacement liquid valve 52 sandwiched between the upper replacement liquid piping 42 is opened, the replacement liquid is ejected from the third pipe portion 33 (central nozzle 11) toward the center area of the upper surface of the substrate W in a continuous flow direction.

從第三管部33噴出的置換液為用以置換基板W的上表面的清洗液之液體。置換液較佳為揮發性比清洗液還高之液體。從第二管部32噴出的置換液較佳為具有與清洗液相溶之相溶性。The replacement liquid ejected from the third pipe portion 33 is a liquid for replacing the cleaning liquid on the upper surface of the substrate W. The replacement liquid is preferably a liquid with higher volatility than the cleaning liquid. The replacement liquid sprayed from the second pipe portion 32 preferably has compatibility with the cleaning liquid phase.

從第三管部33噴出的置換液係例如為有機溶劑。作為從第三管部33噴出的置換液，能例舉包含IPA、HFE(hydrofluoroether；氫氟醚)、甲醇、乙醇、丙酮以及反-1,2-二氯乙烯(Trans-1,2-Dichloroethylene)中的至少一者之液體等。The replacement liquid system ejected from the third pipe portion 33 is, for example, an organic solvent. Examples of the replacement fluid ejected from the third pipe portion 33 include IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, and trans-1,2-dichloroethylene (Trans-1,2-Dichloroethylene). ) At least one of the liquids, etc.

此外，從第三管部33噴出的置換液並無須僅由單體成分所構成，亦可為已與其他的成分混合的液體。例如，從第三管部33噴出的置換液亦可為IPA與DIW的混合液，或亦可為IPA與HFE的混合液。In addition, the replacement liquid ejected from the third pipe portion 33 does not need to be composed only of a monomer component, and may be a liquid that has been mixed with other components. For example, the replacement liquid ejected from the third pipe portion 33 may be a mixed liquid of IPA and DIW, or a mixed liquid of IPA and HFE.

第四管部34係連接於惰性氣體配管43，惰性氣體配管43係用以將惰性氣體導引至第四管部34。當打開夾設於惰性氣體配管43的惰性氣體閥53時，從第四管部34(中央噴嘴11)朝下方連續地噴出惰性氣體。The fourth pipe portion 34 is connected to the inert gas pipe 43, and the inert gas pipe 43 is used to guide the inert gas to the fourth pipe portion 34. When the inert gas valve 53 interposed between the inert gas pipe 43 is opened, the inert gas is continuously ejected downward from the fourth pipe portion 34 (central nozzle 11).

從第四管部34噴出的惰性氣體係例如為氮氣(N2 )等惰性氣體。惰性氣體為相對於基板W的上表面以及形成於基板W的上表面的圖案為惰性的氣體。作為惰性氣體，並未限定於氮氣，亦可使用氬等稀有氣體類。The inert gas system ejected from the fourth pipe portion 34 is, for example, an inert gas such as nitrogen (N 2 ). The inert gas is a gas that is inert with respect to the upper surface of the substrate W and the pattern formed on the upper surface of the substrate W. The inert gas is not limited to nitrogen, and rare gases such as argon may also be used.

雖然於圖2僅圖示一個第一下表面噴嘴12，然而複數個第一下表面噴嘴12係彼此隔著間隔配置於基板W的旋轉方向R。第一下表面噴嘴12為下側清洗液供給單元的一例，用以將DIW等清洗液供給至基板W的下表面。Although only one first lower surface nozzle 12 is shown in FIG. 2, a plurality of first lower surface nozzles 12 are arranged in the rotation direction R of the substrate W at intervals. The first lower surface nozzle 12 is an example of a lower cleaning liquid supply unit, and is used to supply a cleaning liquid such as DIW to the lower surface of the substrate W.

複數個第一下表面噴嘴12係分別連接於複數個下側清洗液配管44，下側清洗液配管44係用以將清洗液導引至第一下表面噴嘴12。當打開夾設於下側清洗液配管44的下側清洗液閥54時，從第一下表面噴嘴12以連續流動之方式朝基板W的下表面的外周區域噴出清洗液。The plurality of first lower surface nozzles 12 are respectively connected to the plurality of lower cleaning liquid pipes 44, and the lower cleaning liquid pipes 44 are used to guide the cleaning liquid to the first lower surface nozzles 12. When the lower cleaning liquid valve 54 interposed between the lower cleaning liquid pipe 44 is opened, the cleaning liquid is sprayed from the first lower surface nozzle 12 toward the outer peripheral area of the lower surface of the substrate W in a continuous flow.

所謂基板W的下表面的外周區域係指基板W的下表面的中央區域與周緣區域之間的環狀區域。所謂基板W的下表面的中央區域係指基板W的下表面中之包含基板W的旋轉中心及其周圍之區域。所謂基板W的下表面的周緣區域係指包含基板W的下表面的周緣及其周圍之區域。The outer peripheral area of the lower surface of the substrate W refers to an annular area between the central area and the peripheral area of the lower surface of the substrate W. The so-called central area of the lower surface of the substrate W refers to the area of the lower surface of the substrate W including the center of rotation of the substrate W and its surroundings. The so-called peripheral area of the lower surface of the substrate W refers to the area including the peripheral edge of the lower surface of the substrate W and the surrounding area.

作為從第一下表面噴嘴12噴出的清洗液，能例舉與從第二管部32噴出的清洗液同樣的清洗液。亦即，作為從第一下表面噴嘴12噴出的清洗液係能例舉DIW、碳酸水、電解離子水、稀釋濃度(例如1ppm至100ppm左右)的鹽酸水、稀釋濃度(例如1ppm至100ppm左右)的氨水、還原水(氫水)等。As the cleaning liquid sprayed from the first lower surface nozzle 12, the same cleaning liquid as the cleaning liquid sprayed from the second pipe portion 32 can be exemplified. That is, as the cleaning liquid system sprayed from the first lower surface nozzle 12, DIW, carbonated water, electrolyzed ionized water, hydrochloric acid water with a dilution concentration (for example, about 1 ppm to 100 ppm), and a dilution concentration (for example, about 1 ppm to about 100 ppm) Ammonia water, reduced water (hydrogen water), etc.

雖然於圖2僅圖示一個第二下表面噴嘴13，然而複數個第二下表面噴嘴13係彼此隔著間隔配置於基板W的旋轉方向R。第二下表面噴嘴13為下側置換液供給單元的一例，用以將IPA等置換液供給至基板W的下表面。Although only one second lower surface nozzle 13 is shown in FIG. 2, a plurality of second lower surface nozzles 13 are arranged in the rotation direction R of the substrate W at intervals. The second lower surface nozzle 13 is an example of a lower replacement liquid supply unit for supplying a replacement liquid such as IPA to the lower surface of the substrate W.

複數個第二下表面噴嘴13係分別連接於複數個下側置換液配管45，複數個下側置換液配管45係用以分別將置換液導引至第二下表面噴嘴13。當打開夾設於下側置換液配管45的下側置換液閥55時，從第二下表面噴嘴13以連續流動之方式朝基板W的下表面的外周區域噴出置換液。The plurality of second lower surface nozzles 13 are respectively connected to the plurality of lower replacement liquid pipes 45, and the plurality of lower replacement liquid pipes 45 are used to guide the replacement liquid to the second lower surface nozzles 13 respectively. When the lower replacement liquid valve 55 interposed between the lower replacement liquid piping 45 is opened, the replacement liquid is sprayed from the second lower surface nozzle 13 toward the outer peripheral area of the lower surface of the substrate W in a continuous flow.

作為從第二下表面噴嘴13噴出的置換液，能例舉與從第三管部33噴出的置換液同樣的置換液。亦即，作為從第三管部33噴出的置換液，能例舉包含IPA、HFE、甲醇、乙醇、丙酮以及反-1,2-二氯乙烯中的至少一者之液體等。As the replacement liquid sprayed from the second lower surface nozzle 13, the same replacement liquid as the replacement liquid sprayed from the third pipe portion 33 can be exemplified. That is, as the replacement liquid ejected from the third pipe portion 33, a liquid containing at least one of IPA, HFE, methanol, ethanol, acetone, and trans-1,2-dichloroethylene can be exemplified.

從第二下表面噴嘴13噴出的置換液並無須僅由單體成分所構成，亦可為已與其他的成分混合的液體。例如，從第二下表面噴嘴13噴出的置換液亦可為IPA與DIW的混合液，或亦可為IPA與HFE的混合液。The replacement liquid ejected from the second lower surface nozzle 13 does not need to be composed only of a monomer component, and may be a liquid that has been mixed with other components. For example, the replacement liquid ejected from the second lower surface nozzle 13 may be a mixed liquid of IPA and DIW, or a mixed liquid of IPA and HFE.

處理單元2係進一步包含：對向構件升降單元61，係驅動對向構件6的升降；以及對向構件旋轉單元62，係使對向構件6繞著旋轉軸線A1旋轉。對向構件升降單元61係能使對向構件6位於下位置至上位置中的任意的位置(高度)。The processing unit 2 further includes: an opposite member lifting unit 61 that drives the lifting of the opposite member 6; and an opposite member rotating unit 62 that rotates the opposite member 6 around the rotation axis A1. The facing member raising and lowering unit 61 can position the facing member 6 at any position (height) from the lower position to the upper position.

所謂下位置係指在對向構件6的可動範圍中對向面6a最接近基板W之位置。所謂上位置係指在對向構件6的可動範圍中對向面6a最遠離基板W之位置。The so-called lower position refers to the position where the facing surface 6a is closest to the substrate W in the movable range of the facing member 6. The upper position refers to the position where the facing surface 6a is farthest from the substrate W in the movable range of the facing member 6.

為了使搬運機器人CR存取(access)自轉基座21的附近且使搬運機器人CR將基板W搬入至腔室4內以及從腔室4內搬出基板W，對向構件6需要位於上位置。In order for the transfer robot CR to access the vicinity of the rotation base 21 and for the transfer robot CR to carry the substrate W into the chamber 4 and unload the substrate W from the chamber 4, the facing member 6 needs to be in the upper position.

對向構件升降單元61係例如包含：滾珠螺桿(ball screw)機構(未圖示)，係結合於支撐構件(未圖示)，該支撐構件係支撐中空軸60；以及電動馬達(未圖示)，係對該滾珠螺桿機構賦予驅動力。對向構件升降機構單元61亦稱為對向構件升降器(阻隔板升降器)。The opposite member lifting unit 61 includes, for example, a ball screw mechanism (not shown), which is coupled to a support member (not shown) that supports the hollow shaft 60; and an electric motor (not shown) ), which imparts driving force to the ball screw mechanism. The facing member lifting mechanism unit 61 is also called a facing member lifter (barrier plate lifter).

對向構件旋轉單元62係例如包含用以使中空軸60旋轉之電動馬達(未圖示)。電動馬達係例如內置於用以支撐中空軸60之支撐構件。對向構件旋轉單元62係使中空軸60旋轉，藉此使對向構件6旋轉。The opposing member rotating unit 62 includes, for example, an electric motor (not shown) for rotating the hollow shaft 60. The electric motor is built in a supporting member for supporting the hollow shaft 60, for example. The opposing member rotating unit 62 rotates the hollow shaft 60 to thereby rotate the opposing member 6.

俯視觀看時環狀構件8係圍繞基板W。環狀構件8係配置於對向構件6的延伸設置部66的下方。環狀構件8係藉由複數個連結構件9連結於延伸設置部66。由於環狀構件8連結於對向構件6，因此環狀構件8係藉由對向構件6的升降而升降。亦即，對向構件升降單元61亦作為環狀構件升降單元發揮作用，使環狀構件8與對向構件6一起升降。The ring member 8 surrounds the substrate W when viewed from above. The ring member 8 is arranged below the extended portion 66 of the opposing member 6. The ring member 8 is connected to the extension portion 66 by a plurality of connecting members 9. Since the ring member 8 is connected to the opposing member 6, the ring member 8 is raised and lowered by the raising and lowering of the opposing member 6. That is, the facing member raising and lowering unit 61 also functions as a ring member raising and lowering unit, and the ring member 8 is raised and lowered together with the facing member 6.

對向構件升降單元61係能使對向構件6移動至阻隔空間區劃位置，阻隔空間區劃位置係用以使基板W、對向構件6以及環狀構件8區劃阻隔空間SS(參照後述的圖3)，阻隔空間SS係限制了氛圍從外部的空間流入。阻隔空間區劃位置亦可位於上位置與下位置之間的位置，阻隔空間區劃位置亦可為下位置。The facing member lifting unit 61 is capable of moving the facing member 6 to the blocking space division position, and the blocking space division position is used to partition the blocking space SS by the substrate W, the facing member 6 and the ring member 8 (refer to FIG. 3 described later). ), the barrier space SS restricts the inflow of atmosphere from the external space. The blocking space division position may also be located between the upper position and the lower position, and the blocking space division position may also be the lower position.

圖3係對向構件6的延伸設置部66的周邊的剖視圖。如圖3所示，藉由延伸設置部66以及環狀構件8區劃處理液排出路徑10，處理液排出路徑10係用以將處理液從阻隔空間SS朝外部空間OS排出。於外部空間OS包含有比對向構件6還更上方的空間、比基板W的下表面還更下方的空間以及比對向構件6與環狀構件8還更徑方向外側方向的空間。FIG. 3 is a cross-sectional view of the periphery of the extended portion 66 of the facing member 6. As shown in FIG. 3, the processing liquid discharge path 10 is divided by the extension portion 66 and the ring member 8, and the processing liquid discharge path 10 is used to discharge the processing liquid from the blocking space SS to the external space OS. The external space OS includes a space above the opposed member 6, a space below the lower surface of the substrate W, and a space radially outward from the opposed member 6 and the ring member 8.

延伸設置部66係包含：寬幅部80，係鉛直方向的寬度比圓板部65還大；以及連結部81，係連結圓板部65與寬幅部80。鉛直方向中的連結部81的寬度係隨著朝向徑方向外側方向而變大。連結部81係具有：傾斜下表面81a，係連結於對向面6a，並以隨著朝向徑方向外側方向而朝向下方之方式傾斜。寬幅度80係具有：平坦下表面80a，係連結於傾斜下表面81a，並在比對向面6a還更下方朝水平方向平坦地延伸。The extension portion 66 includes a wide portion 80 whose width in the vertical direction is larger than that of the circular plate portion 65; and a connecting portion 81 which connects the circular plate portion 65 and the wide portion 80. The width of the connecting portion 81 in the vertical direction increases as it goes to the radially outer direction. The connecting portion 81 has an inclined lower surface 81a, is connected to the facing surface 6a, and is inclined so as to go downward as it goes toward the radially outer direction. The width 80 has a flat lower surface 80a, is connected to the inclined lower surface 81a, and extends flat in the horizontal direction below the facing surface 6a.

阻隔空間SS為對向構件6的圓板部65的對向面6a以及延伸設置部66的傾斜下表面81a與基板W的上表面之間的空間。藉由處理液排出路徑10連通阻隔空間SS與外部空間OS。The blocking space SS is a space between the facing surface 6 a of the disc portion 65 of the facing member 6 and the inclined lower surface 81 a of the extension portion 66 and the upper surface of the substrate W. The blocking space SS and the external space OS are connected through the processing liquid discharge path 10.

環狀構件8係具有上表面、下表面、徑方向內側方向的端面(內側方向端面84)以及徑方向外側方向的端面。俯視觀看時環狀構件8的上表面以及下表面係分別為圓環狀。環狀構件8的上表面係具有：環狀的導引面85，係將存在於基板W的上表面的周緣部之處理液導引至比基板W的上表面的周緣部還更徑方向外側方向；以及環狀的排出路徑區劃面86，係與延伸設置部66一起區劃處理液排出路徑10。內側方向端面84為朝鉛直方向延伸的圓筒狀。The ring member 8 has an upper surface, a lower surface, an end surface in the radially inner direction (inner direction end surface 84), and an end surface in the radial outer direction. The upper surface and the lower surface of the ring-shaped member 8 are each annular|circular shaped in a plan view. The upper surface of the ring member 8 has an annular guide surface 85 that guides the processing liquid present on the peripheral edge portion of the upper surface of the substrate W to the outer side in the radial direction than the peripheral edge portion of the upper surface of the substrate W Direction; and a ring-shaped discharge path division surface 86, which divides the processing liquid discharge path 10 together with the extension portion 66. The inner end surface 84 has a cylindrical shape extending in the vertical direction.

導引面85係連結於內側方向端面84的上方端以及排出路徑區劃面86的徑方向內側方向端。導引面85以及排出路徑區劃面86係分別於水平方向呈平坦。導引面85係與排出路徑區劃面86齊平。亦即，導引面85以及排出路徑區劃面86係構成於水平方向平坦且環狀的單一個平坦面。The guide surface 85 is connected to the upper end of the inner end surface 84 and the radial inner end of the discharge path division surface 86. The guide surface 85 and the discharge path division surface 86 are respectively flat in the horizontal direction. The guide surface 85 is flush with the discharge path division surface 86. That is, the guide surface 85 and the discharge path division surface 86 are formed on a single flat surface that is flat and ring-shaped in the horizontal direction.

在第一實施形態中，在對向構件6位於阻隔空間區劃位置時，環狀構件8係從徑方向外側方向與基板W對向。在對向構件6位於阻隔空間區劃位置時，內側方向端面84的上方端以及導引面85係位於與基板W的上表面相同的高度。In the first embodiment, when the facing member 6 is located at the blocking space division position, the ring-shaped member 8 faces the substrate W from the radially outer direction. When the facing member 6 is located at the blocking space division position, the upper end of the inner end surface 84 and the guide surface 85 are located at the same height as the upper surface of the substrate W.

環狀構件8的下表面係具有環狀的下側傾斜面87以及環狀的下側平坦面88。下側傾斜面87係連結於內側方向端面84的下方端，並以隨著朝向徑方向外側方向而朝向下方之方式傾斜。下側平坦面88係連結於下側傾斜面87的徑方向外側方向端，且於水平方向呈平坦。The lower surface of the ring member 8 has an annular lower inclined surface 87 and an annular lower flat surface 88. The lower inclined surface 87 is connected to the lower end of the inner direction end surface 84, and is inclined so as to face downward as it goes toward the radially outer direction. The lower flat surface 88 is connected to the radially outer end of the lower inclined surface 87 and is flat in the horizontal direction.

處理液排出路徑10係被於水平方向平坦的排出路徑區劃面86以及平坦下表面80a區劃。因此，處理液排出路徑10係俯視觀看時為環狀，且朝水平方向延伸。The processing liquid discharge path 10 is divided by a horizontally flat discharge path division surface 86 and a flat lower surface 80a. Therefore, the processing liquid discharge path 10 is annular in plan view and extends in the horizontal direction.

處理液排出路徑10係具有：流入口10a，係使導引面85上的處理液流入；以及排出口10b，係朝徑方向外側方向排出處理液。流入口10a係設置於導引面85與排出路徑區劃面86之間的交界。流入口10a係位於處理液排出路徑10的徑方向內側方向端，排出口10b係位於處理液排出路徑10的徑方向外側方向端。The processing liquid discharge path 10 has an inflow port 10a for allowing the processing liquid on the guide surface 85 to flow in, and a discharge port 10b for discharging the processing liquid in the radially outer direction. The inflow port 10a is provided at the boundary between the guide surface 85 and the discharge path division surface 86. The inflow port 10 a is located at the radially inner end of the processing liquid discharge path 10, and the discharge port 10 b is located at the radially outer end of the processing liquid discharge path 10.

鉛直方向中的阻隔空間SS的寬度(阻隔空間寬度D1)係比水平方向中的基板W的周緣與環狀構件8的內側方向端面84之間的間隙G的寬度(間隙寬度D2)還大。阻隔空間寬度D1係比鉛直方向中的處理液排出路徑10的寬度(排出路徑寬度D3)還大。The width of the barrier space SS in the vertical direction (the barrier space width D1) is larger than the width of the gap G (gap width D2) between the peripheral edge of the substrate W and the inner end surface 84 of the ring member 8 in the horizontal direction. The barrier space width D1 is larger than the width of the processing liquid discharge path 10 in the vertical direction (discharge path width D3).

在此，於阻隔空間寬度D1包含有鉛直方向中的對向面6a與基板W的上表面之間的距離以及鉛直方向中的傾斜下表面81a與導引面85之間的距離。因此，在導引面85與排出路徑區劃面86之間的交界中，阻隔空間寬度D1係與排出路徑寬度D3相等。然而，在俯視觀看時的大部分的地方中，阻隔空間寬度D1係比排出路徑寬度D3還大，阻隔空間寬度D1的平均值係比排出路徑寬度D3還大。Here, the barrier space width D1 includes the distance between the facing surface 6 a in the vertical direction and the upper surface of the substrate W and the distance between the inclined lower surface 81 a and the guide surface 85 in the vertical direction. Therefore, in the boundary between the guide surface 85 and the discharge path division surface 86, the barrier space width D1 is equal to the discharge path width D3. However, in most places when viewed from above, the barrier space width D1 is larger than the discharge path width D3, and the average value of the barrier space width D1 is larger than the discharge path width D3.

鉛直方向中的對向面6a與基板W的上表面之間的距離係例如為10mm。間隙寬度D2以及排出路徑寬度D3係分別為例如1mm。亦即，由於間隙寬度D2以及排出路徑寬度D3係遠小於阻隔空間寬度D1，因此限制氛圍從外部空間OS流入。The distance between the facing surface 6a in the vertical direction and the upper surface of the substrate W is, for example, 10 mm. The gap width D2 and the discharge path width D3 are each, for example, 1 mm. That is, since the gap width D2 and the discharge path width D3 are much smaller than the barrier space width D1, the inflow of the atmosphere from the external space OS is restricted.

連結構件9係設置於處理液排出路徑10內，並連結於延伸設置部66的寬幅部80的平坦下表面80a與環狀構件8的排出路徑區劃面86。圖4係沿著圖2所示的Ⅳ－Ⅳ線之剖視圖。如圖4所示，複數個連結構件9係以等間隔配置於基板W的旋轉方向R。在本實施形態中連結構件9係設置六個。各個連結構件9為朝鉛直方向延伸的圓柱狀。The connecting member 9 is provided in the processing liquid discharge path 10, and is connected to the flat lower surface 80 a of the wide portion 80 of the extension portion 66 and the discharge path division surface 86 of the ring member 8. Fig. 4 is a cross-sectional view taken along the line IV-IV shown in Fig. 2. As shown in FIG. 4, a plurality of connecting members 9 are arranged in the rotation direction R of the substrate W at equal intervals. In this embodiment, six connecting members 9 are provided. Each connecting member 9 has a cylindrical shape extending in the vertical direction.

再次參照圖2，處理罩7係包含：複數個防護罩71，係接住從被自轉夾具5保持之基板W朝外側方向飛散的液體；以及複數個罩72，係接住被複數個防護罩71導引至下方的液體。2 again, the processing cover 7 includes: a plurality of protective covers 71, which catch the liquid scattered outward from the substrate W held by the rotation jig 5; and a plurality of covers 72, which catch the plurality of protective covers 71 guide to the liquid below.

在本實施形態中顯示設置了兩個防護罩71(第一防護罩71A以及第二防護罩71B)以及兩個罩72(第二罩72A以及第二罩72B)的例子。In this embodiment, an example is shown in which two protective covers 71 (first protective cover 71A and second protective cover 71B) and two covers 72 (second cover 72A and second cover 72B) are provided.

第一罩72A以及第二罩72B係分別具有朝上方開放的環狀溝槽的形態。The first cover 72A and the second cover 72B each have a form of an annular groove opened upward.

第一防護罩71A係以圍繞自轉基座21之方式配置。第二防護罩71B(內側防護罩)係以在比第一防護罩71A(外側防護罩)還更基板W的徑方向內側方向圍繞自轉基座21之方式配置。The first protective cover 71A is arranged to surround the rotation base 21. The second protective cover 71B (inner protective cover) is arranged so as to surround the rotation base 21 in the radially inner direction of the substrate W further than the first protective cover 71A (outer protective cover).

第一防護罩71A以及第二防護罩71B係分別具有大致圓筒形狀，各個防護罩71的上端部係以朝向徑方向內側方向之方式朝內側方向傾斜。The first protection cover 71A and the second protection cover 71B each have a substantially cylindrical shape, and the upper end of each protection cover 71 is inclined inwardly so as to face the radially inward direction.

詳細而言，第一防護罩71A係具有：第一圓筒部75A，係俯視觀看時圍繞對向構件6以及環狀構件8；以及第一圓環部76A，係從第一圓筒部75A的上端朝徑方向內側方向延伸。第一圓環部76A係以隨著朝向徑方向內側方向而朝向上方之方式相對於水平方向傾斜。In detail, the first protective cover 71A has: a first cylindrical portion 75A that surrounds the opposed member 6 and the ring member 8 in a plan view; and a first annular portion 76A that extends from the first cylindrical portion 75A The upper end of the tube extends radially inward. The first annular portion 76A is inclined with respect to the horizontal direction so as to go upward as it goes to the radially inner direction.

第二防護罩71B係包含：第二圓筒部75B，係配置於比第一圓筒部75A還更內側方向，俯視觀看時圍繞對向構件6以及環狀構件8；以及第二圓環部76B，係從第二圓筒部75B的上端朝徑方向內側方向延伸。第二圓環部76B係從下方與第一圓環部76A對向。第二圓環部76B係以隨著朝向徑方向內側方向而朝向上方之方式相對於水平方向傾斜。The second protective cover 71B includes: a second cylindrical portion 75B, which is arranged in a further inner direction than the first cylindrical portion 75A, and surrounds the opposing member 6 and the annular member 8 in a plan view; and a second annular portion 76B extends from the upper end of the second cylindrical portion 75B in the radially inward direction. The second annular portion 76B opposes the first annular portion 76A from below. The second annular portion 76B is inclined with respect to the horizontal direction so as to go upward as it goes to the radially inner direction.

第一罩72A係接住被第一防護罩71A導引至下方的處理液。第二罩72B係與第一防護罩71A一體地形成，並接住被第二防護罩71B導引至下方的處理液。被第一罩72A接住的處理液係被連結於第一罩72A的下端的第一處理液回收路徑(未圖示)回收。被第二罩72B接住的處理液係被連結於第二罩72B的下端的第二處理液回收路徑(未圖示)回收。The first cover 72A catches the processing liquid guided downward by the first protective cover 71A. The second cover 72B is formed integrally with the first protection cover 71A, and catches the processing liquid guided downward by the second protection cover 71B. The processing liquid system received by the first cover 72A is recovered by a first processing liquid recovery path (not shown) connected to the lower end of the first cover 72A. The processing liquid system received by the second cover 72B is recovered by a second processing liquid recovery path (not shown) connected to the lower end of the second cover 72B.

處理單元2係包含防護罩升降單元74，防護罩升降單元74係分別使第一防護罩71A以及第二防護罩71B升降。防護罩升降單元74係使第一防護罩71A在下位置與上位置之間升降。防護罩升降單元74係使第二防護罩71B在下位置與上位置之間升降。The processing unit 2 includes a protective cover lifting unit 74, and the protective cover lifting unit 74 lifts and lowers the first protective cover 71A and the second protective cover 71B, respectively. The shield raising and lowering unit 74 raises and lowers the first shield 71A between the lower position and the upper position. The shield raising and lowering unit 74 raises and lowers the second shield 71B between the lower position and the upper position.

在第一防護罩71A以及第二防護罩71B皆位於上位置時，從基板W飛散的處理液係被第二防護罩71B接住。在第二防護罩71B位於下位置且第一防護罩71A位於上位置時，從基板W飛散的處理液係被第一防護罩71A接住。When both the first protective cover 71A and the second protective cover 71B are in the upper position, the processing liquid system scattered from the substrate W is caught by the second protective cover 71B. When the second protective cover 71B is in the lower position and the first protective cover 71A is in the upper position, the processing liquid system scattered from the substrate W is caught by the first protective cover 71A.

在第一防護罩71A以及第二防護罩71B皆為於下位置且對向構件6位於上位置時，搬運機器人CR係能將基板W搬入至腔室4內以及從腔室4內搬出基板W。When the first protective cover 71A and the second protective cover 71B are in the lower position and the facing member 6 is in the upper position, the transfer robot CR can carry the substrate W into the chamber 4 and unload the substrate W from the chamber 4 .

防護罩升降單元74係例如包含：第一滾珠螺桿機構(未圖示)，係結合於第一防護罩71A；第一馬達(未圖示)，係對第一滾珠螺桿機構賦予驅動力；第二滾珠螺桿機構(未圖示)，係結合於第二防護罩71B；以及第二馬達(未圖示)，係對第二滾珠螺桿機構賦予驅動力。防護罩升降單元74亦稱為防護罩升降器。The protective cover lifting unit 74 includes, for example, a first ball screw mechanism (not shown), which is coupled to the first protective cover 71A; a first motor (not shown), which imparts a driving force to the first ball screw mechanism; The second ball screw mechanism (not shown) is coupled to the second shield 71B; and the second motor (not shown) is used to impart driving force to the second ball screw mechanism. The shield lift unit 74 is also called a shield lifter.

圖5係顯示基板處理裝置1的主要部分的電性構成之方塊圖。控制器3係具備微電腦(microcomputer)，並依循預定的控制程式控制基板處理裝置1所具備的控制對象。FIG. 5 is a block diagram showing the electrical configuration of the main part of the substrate processing apparatus 1. The controller 3 is equipped with a microcomputer, and controls the control target of the substrate processing apparatus 1 according to a predetermined control program.

具體而言，控制器3係包含處理器(CPU(Central Processing Unit；中央處理單元))3A以及儲存有控制程式的記憶體3B。控制器3係構成為：處理器3A執行控制程式，藉此執行基板處理用的各種控制。Specifically, the controller 3 includes a processor (CPU (Central Processing Unit; central processing unit)) 3A and a memory 3B storing a control program. The controller 3 is configured such that the processor 3A executes a control program, thereby executing various controls for substrate processing.

尤其是，控制器3係編程為控制搬運機器人IR、CR、吸引單元27、自轉馬達23、防護罩升降單元74、對向構件旋轉單元62、對向構件升降單元61、吸引閥28、藥液閥50、上側清洗液閥51、上側置換液閥52、惰性氣體閥53、下側清洗液閥54以及下側置換液閥55。In particular, the controller 3 is programmed to control the transport robot IR, CR, the suction unit 27, the rotation motor 23, the shield lifting unit 74, the opposing member rotating unit 62, the opposing member lifting unit 61, the suction valve 28, and the liquid medicine. The valve 50, the upper cleaning liquid valve 51, the upper replacement liquid valve 52, the inert gas valve 53, the lower cleaning liquid valve 54, and the lower replacement liquid valve 55.

藉由控制器3控制閥，藉此控制有無從對應的噴嘴噴出處理液或者惰性氣體以及控制從對應的噴嘴噴出的處理液或者惰性氣體的噴出流量。The controller 3 controls the valve to control whether or not the processing liquid or inert gas is sprayed from the corresponding nozzle, and to control the spray flow rate of the processing liquid or inert gas from the corresponding nozzle.

圖6係用以說明基板處理裝置1所為的基板處理的一例之流程圖。圖6主要顯示藉由控制器3執行程式所實現的處理。圖7A至圖7F係用以說明前述基板處理的各個工序的樣子之示意圖。以下主要參照圖2以及圖6。適當地參照圖7A至圖7F。FIG. 6 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus 1. FIG. 6 mainly shows the processing realized by the controller 3 executing the program. 7A to 7F are schematic diagrams for explaining the state of each step of the aforementioned substrate processing. The following mainly refers to FIG. 2 and FIG. 6. Refer to FIGS. 7A to 7F as appropriate.

如圖6所示，在基板處理裝置1所為的基板處理中例如執行基板搬入工序(步驟S1)、阻隔空間區劃工序(步驟S2)、氛圍置換工序(步驟S3)、預清洗工序(步驟S4)、藥液供給工序(步驟S5)、清洗工序(步驟S6)、置換液供給工序(步驟S7)、旋乾(spin drying)工序(步驟S8)以及基板搬出工序(步驟S9)。As shown in FIG. 6, in the substrate processing performed by the substrate processing apparatus 1, for example, a substrate loading process (step S1), a barrier space division process (step S2), an atmosphere replacement process (step S3), and a pre-cleaning process (step S4) are executed. , The chemical liquid supply step (step S5), the cleaning step (step S6), the replacement liquid supply step (step S7), the spin drying step (step S8), and the substrate unloading step (step S9).

首先，如圖7A所示，未處理的基板W係被搬運機器人CR從承載器C搬入至處理單元2並被傳遞至自轉夾具5(步驟S1)。藉此，基板W係被自轉夾具5水平地保持(基板保持工序)。在搬入基板W時，對向構件6係退避至上位置，複數個防護罩71係退避至下位置。First, as shown in FIG. 7A, the unprocessed substrate W is carried in from the carrier C to the processing unit 2 by the transfer robot CR, and is transferred to the rotation jig 5 (step S1). Thereby, the substrate W is held horizontally by the rotation jig 5 (substrate holding step). When the substrate W is carried in, the facing member 6 is retracted to the upper position, and the plurality of protective covers 71 is retracted to the lower position.

自轉夾具5對於基板W的保持係持續至旋乾工序(步驟S8)結束為止。防護罩升降單元74係在基板保持工序開始後至旋乾工序(步驟S8)結束為止的期間調整第一防護罩71A以及第二防護罩71B的高度位置，以使至少一個防護罩71位於上位置。The holding system of the substrate W by the rotation jig 5 continues until the spin-drying process (step S8) is completed. The protective cover raising and lowering unit 74 adjusts the height positions of the first protective cover 71A and the second protective cover 71B during the period from the start of the substrate holding process to the end of the spin-drying process (step S8) so that at least one protective cover 71 is located at the upper position .

接著，搬運機器人CR退避至處理單元2外後，執行用以區劃阻隔空間SS之阻隔空間區劃工序(步驟S2)。具體而言，如圖7B所示，對向構件升降單元61係使對向構件6移動至阻隔空間區劃位置。藉此，藉由基板W、對向構件6以及環狀構件8區劃阻隔空間SS。Next, after the transfer robot CR retreats to the outside of the processing unit 2, a barrier space partitioning process for partitioning the barrier space SS is performed (step S2). Specifically, as shown in FIG. 7B, the facing member lifting unit 61 moves the facing member 6 to the blocking space division position. Thereby, the blocking space SS is partitioned by the substrate W, the facing member 6 and the ring member 8.

接著，並行地執行氛圍置換工序(步驟S3)以及預清洗工序(步驟S4)，氛圍置換工序(步驟S3)係藉由惰性氣體置換阻隔空間SS的氛圍，預清洗工序(步驟S4)係藉由清洗液洗淨基板W的上表面。Next, the atmosphere replacement step (step S3) and the pre-cleaning step (step S4) are performed in parallel. The atmosphere replacement step (step S3) replaces the atmosphere of the barrier space SS with an inert gas, and the pre-cleaning step (step S4) is performed by The cleaning liquid cleans the upper surface of the substrate W.

具體而言，自轉馬達23開始旋轉基板W。接著，對向構件旋轉單元62開始旋轉對向構件6以及環狀構件8。對向構件旋轉單元62係使對向構件6以及環狀構件8與基板W同步旋轉(同步旋轉工序)。基板W、對向構件6以及環狀構件8的同步旋轉係持續至旋乾工序(步驟S8)結束為止。Specifically, the rotation motor 23 starts to rotate the substrate W. Next, the opposing member rotating unit 62 starts to rotate the opposing member 6 and the ring member 8. The opposing member rotation unit 62 rotates the opposing member 6 and the ring member 8 in synchronization with the substrate W (synchronized rotation step). The synchronous rotation system of the substrate W, the facing member 6 and the ring member 8 continues until the spin-drying process (step S8) is completed.

接著，在對向構件6位於阻隔空間區劃位置的狀態下打開惰性氣體閥53以及上側清洗液閥51。打開惰性氣體閥53，藉此如圖7C所示從中央噴嘴11噴出惰性氣體並對阻隔空間SS供給惰性氣體。打開上側清洗液閥51，藉此對基板W的上表面噴出DIW等清洗液，亦即如圖7C所示從中央噴嘴11朝基板W噴出DIW等清洗液。被噴出的清洗液係著液於基板W的上表面的中央區域。Next, the inert gas valve 53 and the upper cleaning liquid valve 51 are opened in a state where the opposing member 6 is located at the blocking space division position. The inert gas valve 53 is opened, whereby the inert gas is ejected from the central nozzle 11 and the inert gas is supplied to the blocking space SS as shown in FIG. 7C. When the upper cleaning liquid valve 51 is opened, the cleaning liquid such as DIW is sprayed to the upper surface of the substrate W, that is, the cleaning liquid such as DIW is sprayed from the central nozzle 11 toward the substrate W as shown in FIG. 7C. The sprayed cleaning liquid is deposited on the central area of the upper surface of the substrate W.

基板W的旋轉所致使的離心力係作用於著液於基板W的上表面的清洗液。因此，清洗液係藉由離心力遍及至基板W的上表面的整體。已到達至基板W的上表面的周緣部之清洗液係經由導引面85流入至處理液排出路徑10。接著，已流入至處理液排出路徑10之清洗液係被排出至阻隔空間SS外。藉由從基板W的上表面的周緣部移動至導引面85之清洗液塞住間隙G。The centrifugal force caused by the rotation of the substrate W acts on the cleaning liquid impinging on the upper surface of the substrate W. Therefore, the cleaning liquid spreads to the entire upper surface of the substrate W by centrifugal force. The cleaning liquid that has reached the peripheral edge of the upper surface of the substrate W flows into the processing liquid discharge path 10 via the guide surface 85. Next, the cleaning liquid that has flowed into the processing liquid discharge path 10 is discharged to the outside of the blocking space SS. The gap G is blocked by the cleaning liquid that moves from the peripheral edge portion of the upper surface of the substrate W to the guide surface 85.

當開始朝阻隔空間SS供給惰性氣體時，藉由惰性氣體開始將阻隔空間SS內的空氣從間隙G以及處理液排出路徑10推出。持續朝阻隔空間SS供給惰性氣體，藉此完全排出阻隔空間SS內的空氣，於阻隔空間SS內充滿惰性氣體。亦即，藉由惰性氣體置換阻隔空間SS內的氛圍。惰性氣體閥53係維持在打開的狀態直至旋乾工序(步驟S8)結束為止。When the inert gas is started to be supplied to the barrier space SS, the inert gas starts to push out the air in the barrier space SS from the gap G and the processing liquid discharge path 10. The inert gas is continuously supplied to the blocking space SS, thereby completely exhausting the air in the blocking space SS, and the blocking space SS is filled with inert gas. That is, the atmosphere in the barrier space SS is replaced by the inert gas. The inert gas valve 53 is maintained in an open state until the spin-drying process (step S8) ends.

在預清洗工序中，環狀構件8與基板W之間的間隙G係被清洗液塞住。因此，抑制惰性氣體經由間隙G移動。此外，清洗液係經由處理液排出路徑10從阻隔空間SS朝外部空間OS排出。因此，只要未作用壓退處理液排出路徑10內的清洗液這種程度的大的力量，即不會導致氛圍經由處理液排出路徑10朝阻隔空間SS流入。另一方面，由於對阻隔空間SS供給惰性氣體，因此阻隔空間SS內的空氣係經由處理液排出路徑10被排出至外部空間OS，以使阻隔空間SS內的壓力不會過度上升。In the pre-cleaning step, the gap G between the ring member 8 and the substrate W is blocked by the cleaning liquid. Therefore, the movement of the inert gas through the gap G is suppressed. In addition, the cleaning liquid system is discharged from the blocking space SS to the external space OS via the processing liquid discharge path 10. Therefore, as long as a large force of such a degree as to suppress the cleaning liquid in the processing liquid discharge path 10 is not applied, the atmosphere will not flow into the blocking space SS via the processing liquid discharge path 10. On the other hand, since the inert gas is supplied to the barrier space SS, the air in the barrier space SS is discharged to the external space OS via the processing liquid discharge path 10 so that the pressure in the barrier space SS does not increase excessively.

因此，能更限制氛圍從外部空間OS朝阻隔空間SS流入，並能將阻隔空間SS內的氛圍置換成惰性氣體。Therefore, the inflow of the atmosphere from the external space OS into the barrier space SS can be more restricted, and the atmosphere in the barrier space SS can be replaced with an inert gas.

此外，雖然在圖7C中圖示處理液排出路徑10被清洗液填充的狀態，然而在惰性氣體通過處理液排出路徑10移動至外部空間OS時，將清洗液(處理液)的一部分壓退並於處理液排出路徑10移動(在圖7D以後的圖式中亦同樣)。In addition, although FIG. 7C illustrates a state in which the processing liquid discharge path 10 is filled with the cleaning liquid, when the inert gas moves to the external space OS through the processing liquid discharge path 10, a part of the cleaning liquid (processing liquid) is pushed back and merged. It moves in the processing liquid discharge path 10 (the same is true in the drawings after FIG. 7D).

接著，執行藥液供給工序(步驟S5)，藥液供給工序(步驟S5)係對基板W的上表面供給藥液，以藉由藥液處理基板W的上表面。Next, a chemical liquid supply step (step S5) is performed. The chemical liquid supply step (step S5) supplies the chemical liquid to the upper surface of the substrate W to treat the upper surface of the substrate W with the chemical liquid.

具體而言，在阻隔空間內SS充滿惰性氣體的狀態下，關閉上側清洗液閥51並打開藥液閥50。藉此，停止從中央噴嘴11噴出清洗液，從中央噴嘴11朝基板W的上表面噴出DHF等藥液。Specifically, in a state where the barrier space SS is filled with inert gas, the upper cleaning liquid valve 51 is closed and the chemical liquid valve 50 is opened. Thereby, the spraying of the cleaning liquid from the central nozzle 11 is stopped, and the chemical liquid such as DHF is sprayed from the central nozzle 11 toward the upper surface of the substrate W.

如圖7D所示，被噴出的藥液係著液於基板W的上表面的中央區域。藥液供給工序為處理液供給工序的一例，用以在已藉由惰性氣體置換阻隔空間SS內的氛圍的狀態下對基板W的上表面供給處理液。預清洗工序係在處理液供給工序之前執行。As shown in FIG. 7D, the sprayed chemical liquid is attached to the central area of the upper surface of the substrate W. As shown in FIG. The chemical liquid supply step is an example of the processing liquid supply step for supplying the processing liquid to the upper surface of the substrate W in a state where the atmosphere in the barrier space SS has been replaced by an inert gas. The pre-cleaning process is performed before the process liquid supply process.

基板W的旋轉所致使的離心力係作用於已附著於基板W的上表面的藥液。因此，藥液係藉由離心力遍及至基板W的上表面的整體從而置換存在於基板W的上表面的清洗液。已到達至基板W的上表面的周緣部的藥液係經由導引面85流入至處理液排出路徑10。接著，藥液係經由處理液排出路徑10排出至阻隔空間SS外(藥液排出工序、處理液排出工序)。The centrifugal force caused by the rotation of the substrate W acts on the chemical solution that has adhered to the upper surface of the substrate W. Therefore, the chemical liquid spreads to the entire upper surface of the substrate W by centrifugal force to replace the cleaning liquid present on the upper surface of the substrate W. The medicinal solution that has reached the peripheral edge portion of the upper surface of the substrate W flows into the processing solution discharge path 10 via the guide surface 85. Next, the chemical liquid system is discharged to the outside of the barrier space SS via the processing liquid discharge path 10 (the chemical liquid discharge step, the processing liquid discharge step).

此外，在藥液供給工序中，打開複數個下側清洗液閥54。藉此，開始從複數個第一下表面噴嘴12噴出清洗液。從複數個第一下表面噴嘴12噴出的清洗液係著液於基板W的下表面。In addition, in the chemical liquid supply step, a plurality of lower cleaning liquid valves 54 are opened. Thereby, the cleaning liquid starts to be sprayed from the plurality of first lower surface nozzles 12. The cleaning liquid sprayed from the plurality of first lower surface nozzles 12 is attached to the lower surface of the substrate W.

基板W的旋轉所致使的離心力係作用於已附著於基板W的下表面的清洗液。藉此，清洗液係擴展至基板W的下表面的周緣部。藉由清洗液擴展至基板W的下表面的周緣部從而保護基板W的下表面(下表面保護工序、保護液供給工序)。清洗液係作為用以保護基板W的下表面之保護液發揮作用。因此，第一下表面噴嘴12係作為保護液供給單元發揮作用。The centrifugal force caused by the rotation of the substrate W acts on the cleaning liquid that has adhered to the lower surface of the substrate W. Thereby, the cleaning liquid spreads to the peripheral edge portion of the lower surface of the substrate W. The cleaning liquid spreads to the peripheral edge of the lower surface of the substrate W to protect the lower surface of the substrate W (lower surface protection step, protective liquid supply step). The cleaning liquid functions as a protective liquid for protecting the lower surface of the substrate W. Therefore, the first lower surface nozzle 12 functions as a protection liquid supply unit.

已到達至基板W的下表面的周緣部之清洗液係被導引至環狀構件8的下表面後從環狀構件8朝徑方向外側方向飛散。The cleaning liquid system that has reached the peripheral edge portion of the lower surface of the substrate W is guided to the lower surface of the ring member 8 and then scattered from the ring member 8 in the radially outer direction.

接著，執行清洗工序(步驟S6)，清洗工序(步驟S6)係對基板W的上表面供給清洗液並沖洗存在於基板W的上表面的藥液。具體而言，在阻隔空間SS內充滿惰性氣體的狀態下關閉藥液閥50並打開上側清洗液閥51。藉此，停止從中央噴嘴11噴出藥液，從中央噴嘴11朝基板W的上表面噴出DIW等清洗液。如圖7E所示，被噴出的清洗液係著液於基板W的上表面的中央區域。清洗液供給工序為處理液供給工序的一例，用以在已藉由惰性氣體置換阻隔空間SS內的氛圍的狀態下對基板W的上表面供給處理液。Next, a cleaning step (step S6) is performed. The cleaning step (step S6) is to supply a cleaning liquid to the upper surface of the substrate W and rinse the chemical liquid existing on the upper surface of the substrate W. Specifically, in a state where the barrier space SS is filled with inert gas, the chemical liquid valve 50 is closed and the upper cleaning liquid valve 51 is opened. As a result, the spraying of the chemical liquid from the center nozzle 11 is stopped, and the cleaning liquid such as DIW is sprayed toward the upper surface of the substrate W from the center nozzle 11. As shown in FIG. 7E, the sprayed cleaning liquid is deposited on the central area of the upper surface of the substrate W. As shown in FIG. The cleaning liquid supply step is an example of the processing liquid supply step for supplying the processing liquid to the upper surface of the substrate W in a state where the atmosphere in the barrier space SS has been replaced by an inert gas.

基板W的旋轉所致使的離心力係作用於已著液於基板W的上表面的清洗液。因此，清洗液係藉由離心力遍及至基板W的上表面的整體並置換存在於基板W的上表面的藥液。已到達至基板W的上表面的周緣部之清洗液係經由導引面85流入至處理液排出路徑10。接著，清洗液係經由處理液排出路徑10排出至阻隔空間SS外(清洗液排出工序、處理液排出工序)。在清洗工序中，複數個下側清洗液閥54係維持在被打開的狀態。The centrifugal force caused by the rotation of the substrate W acts on the cleaning liquid that has been deposited on the upper surface of the substrate W. Therefore, the cleaning liquid spreads to the entire upper surface of the substrate W by centrifugal force and replaces the chemical liquid existing on the upper surface of the substrate W. The cleaning liquid that has reached the peripheral edge of the upper surface of the substrate W flows into the processing liquid discharge path 10 via the guide surface 85. Next, the cleaning liquid system is discharged to the outside of the barrier space SS via the processing liquid discharge path 10 (washing liquid discharge step, processing liquid discharge step). In the cleaning process, the plurality of lower cleaning liquid valves 54 are maintained in an opened state.

接著，執行置換液供給工序(步驟S7)，置換液供給工序(步驟S7)係對基板W的上表面供給置換液，從而藉由置換液置換存在於基板W的上表面的清洗液。具體而言，在阻隔空間SS內充滿惰性氣體的狀態下關閉上側清洗液閥51並打開上側置換液閥52。藉此，停止從中央噴嘴11噴出清洗液，從中央噴嘴11朝基板W的上表面噴出IPA等置換液。如圖7F所示，被噴出的置換液係著液於基板W的上表面的中央區域。置換液供給工序為處理液供給工序的一例，用以在已藉由惰性氣體置換阻隔空間SS內的氛圍的狀態下對基板W的上表面供給處理液。Next, a replacement liquid supply step (step S7) is performed. The replacement liquid supply step (step S7) supplies a replacement liquid to the upper surface of the substrate W to replace the cleaning liquid existing on the upper surface of the substrate W with the replacement liquid. Specifically, in a state where the barrier space SS is filled with inert gas, the upper cleaning liquid valve 51 is closed and the upper replacement liquid valve 52 is opened. As a result, the spraying of the cleaning liquid from the central nozzle 11 is stopped, and the replacement liquid such as IPA is sprayed toward the upper surface of the substrate W from the central nozzle 11. As shown in FIG. 7F, the ejected replacement fluid is deposited on the central area of the upper surface of the substrate W. As shown in FIG. The replacement liquid supply step is an example of the processing liquid supply step for supplying the processing liquid to the upper surface of the substrate W in a state where the atmosphere in the barrier space SS has been replaced by an inert gas.

基板W的旋轉所致使的離心力係作用於已著液於基板W的上表面的置換液。因此，置換液係藉由離心力遍及至基板W的上表面的整體並置換存在於基板W的上表面的清洗液。已到達至基板W的上表面的周緣部之置換液係經由導引面85流入至處理液排出路徑10。接著，置換液係經由處理液排出路徑10排出至阻隔空間SS外(置換液排出工序、處理液排出工序)。The centrifugal force caused by the rotation of the substrate W acts on the replacement liquid that has been deposited on the upper surface of the substrate W. Therefore, the replacement liquid spreads to the entire upper surface of the substrate W by centrifugal force and replaces the cleaning liquid present on the upper surface of the substrate W. The replacement liquid system that has reached the peripheral edge portion of the upper surface of the substrate W flows into the processing liquid discharge path 10 via the guide surface 85. Next, the replacement liquid system is discharged to the outside of the barrier space SS via the treatment liquid discharge path 10 (a replacement liquid discharge step, a treatment liquid discharge step).

在置換液供給工序中，關閉複數個下側清洗液閥54並打開複數個下側置換液閥55。藉此，停止從複數個第一下表面噴嘴12噴出清洗液，開始從複數個第二下表面噴嘴13噴出IPA等置換液。從複數個第二下表面噴嘴13噴出的置換液係著液於基板W的下表面。In the replacement liquid supply step, the plurality of lower cleaning liquid valves 54 are closed and the plurality of lower replacement liquid valves 55 are opened. Thereby, the spraying of the cleaning liquid from the plurality of first lower surface nozzles 12 is stopped, and the spraying of replacement liquid such as IPA from the plurality of second lower surface nozzles 13 is started. The replacement liquid ejected from the plurality of second lower surface nozzles 13 is attached to the lower surface of the substrate W.

基板W的旋轉所致使的離心力係作用於已附著於基板W的下表面的置換液。藉此，置換液係擴展至基板W的下表面的周緣部(下表面保護工序、保護液供給工序)。置換液係作為用以保護基板W的下表面之保護液發揮作用。因此，第二下表面噴嘴13係作為保護液供給單元發揮作用。The centrifugal force caused by the rotation of the substrate W acts on the replacement liquid that has adhered to the lower surface of the substrate W. Thereby, the replacement liquid system spreads to the peripheral edge portion of the lower surface of the substrate W (lower surface protection step, protection liquid supply step). The replacement liquid functions as a protective liquid for protecting the lower surface of the substrate W. Therefore, the second lower surface nozzle 13 functions as a protection liquid supply unit.

置換液係擴展至基板W的下表面的周緣部，藉此置換存在於基板W的下表面的清洗液。已到達至基板W的下表面的周緣部之置換液係被導引至環狀構件8的下表面後從環狀構件8朝徑方向外側方向飛散。The replacement liquid spreads to the peripheral edge portion of the lower surface of the substrate W, thereby replacing the cleaning liquid present on the lower surface of the substrate W. The replacement fluid system that has reached the peripheral edge portion of the lower surface of the substrate W is guided to the lower surface of the ring member 8 and then scattered from the ring member 8 in the radially outer direction.

接著，執行旋乾工序(步驟S8)。具體而言，關閉上側置換液閥52以及複數個下側置換液閥55。藉此，停止朝基板W的上表面以及下表面供給置換液。Next, the spin-drying process is performed (step S8). Specifically, the upper replacement liquid valve 52 and the plurality of lower replacement liquid valves 55 are closed. Thereby, the supply of the replacement liquid to the upper surface and the lower surface of the substrate W is stopped.

接著，自轉馬達23加速基板W的旋轉從而使基板W高速旋轉。藉此，大的離心力作用於殘留在基板W上的置換液，基板W上的置換液係被甩離至基板W的周圍。在旋乾工序中持續朝阻隔空間SS供給惰性氣體，藉此促進置換液的蒸發。Next, the rotation motor 23 accelerates the rotation of the substrate W to rotate the substrate W at a high speed. Thereby, a large centrifugal force acts on the replacement fluid remaining on the substrate W, and the replacement fluid on the substrate W is thrown away to the periphery of the substrate W. In the spin-drying process, the inert gas is continuously supplied to the blocking space SS, thereby promoting the evaporation of the replacement liquid.

接著，自轉馬達23係使基板W停止旋轉，從而使對向構件旋轉單元62停止旋轉對向構件6以及環狀構件8。防護罩升降單元74係使第一防護罩71A以及第二防護罩71B移動至下位置。關閉惰性氣體閥53。接著，對向構件升降單元61係使對向構件6移動至上位置。Next, the autorotation motor 23 stops the rotation of the substrate W, thereby stopping the rotation of the opposing member 6 and the ring member 8 by the opposing member rotating unit 62. The protective cover lifting unit 74 moves the first protective cover 71A and the second protective cover 71B to the lower position. Close the inert gas valve 53. Next, the facing member elevating unit 61 moves the facing member 6 to the upper position.

搬運機器人CR係進入至處理單元2，從自轉夾具5的夾具銷(chuck pin)20拾取處理完畢的基板W並朝處理單元2外搬出(步驟S9)。該基板W係從搬運機器人CR被傳遞至搬運機器人IR並藉由搬運機器人IR收容於承載器C。The transfer robot CR enters the processing unit 2, picks up the processed substrate W from the chuck pin 20 of the rotation jig 5, and carries it out of the processing unit 2 (step S9). The substrate W is transferred from the transfer robot CR to the transfer robot IR, and is stored in the carrier C by the transfer robot IR.

接著，說明基板處理中的環狀構件8附近的處理液的樣子。環狀構件8附近的處理液的樣子係不論處理液的種類為何皆相同。亦即，在預清洗工序、藥液供給工序、清洗工序以及置換液供給工序中的任一個工序中皆能為相同的說明。Next, the state of the processing liquid in the vicinity of the ring member 8 during substrate processing will be described. The state of the treatment liquid in the vicinity of the ring member 8 is the same regardless of the type of the treatment liquid. That is, the same description can be applied to any one of the pre-cleaning step, the chemical solution supply step, the cleaning step, and the replacement liquid supply step.

圖8係用以說明處理液從阻隔空間SS排出時的環狀構件8附近的處理液的樣子之示意圖。作用力作用於存在於基板W的上表面的處理液，環狀構件8係接近地配置於基板W的上表面的周緣部。因此，已到達至基板W的上表面的周緣部之處理液係不會從基板W的周緣與環狀構件8之間的間隙G朝下方落下，而是從基板W的上表面的周緣部移動至徑方向外側方向並到達至導引面85。亦即，導引面85係藉由基板W的旋轉所致使的離心力使存在於基板W的上表面的處理液移動至比基板W的上表面的周緣部還更徑方向外側方向。FIG. 8 is a schematic diagram for explaining the state of the processing liquid in the vicinity of the annular member 8 when the processing liquid is discharged from the blocking space SS. The urging force acts on the processing liquid present on the upper surface of the substrate W, and the ring-shaped member 8 is arranged close to the peripheral edge portion of the upper surface of the substrate W. Therefore, the processing liquid system that has reached the peripheral edge of the upper surface of the substrate W does not fall downward from the gap G between the peripheral edge of the substrate W and the ring member 8, but moves from the peripheral edge of the upper surface of the substrate W To the outer direction in the radial direction and reach the guide surface 85. That is, the guide surface 85 moves the processing liquid present on the upper surface of the substrate W to a radially outer direction than the peripheral edge portion of the upper surface of the substrate W due to the centrifugal force caused by the rotation of the substrate W.

已於導引面85上移動的處理液係於導引面85上朝徑方向外側方向移動並流入至處理液排出路徑10的流入口10a。已流入至處理液排出路徑10的流入口10a之處理液係於處理液排出路徑10朝徑方向外側方向水平地移動並從排出口10b排出。The processing liquid that has moved on the guide surface 85 moves in the radially outer direction on the guide surface 85 and flows into the inflow port 10 a of the processing liquid discharge path 10. The processing liquid that has flowed into the inflow port 10a of the processing liquid discharge path 10 moves horizontally in the radially outer direction along the processing liquid discharge path 10 and is discharged from the discharge port 10b.

在處理液流入至處理液排出路徑10之前，導引面85上的處理液會碰撞至對向構件6的延伸設置部66的傾斜下表面81a。在此情形中，於導引面85上的處理液中產生逆流(朝向徑方向內側方向的流動)，並藉由該逆流的產生而形成覆液100。Before the processing liquid flows into the processing liquid discharge path 10, the processing liquid on the guide surface 85 collides with the inclined lower surface 81 a of the extension portion 66 of the facing member 6. In this case, a backflow (a flow toward the inner side of the radial direction) is generated in the treatment liquid on the guide surface 85, and the coating liquid 100 is formed by the generation of the backflow.

當產生逆流時，會有朝向徑方向內側方向之處理液與朝向徑方向外側方向之處理液碰撞從而處理液在阻隔空間SS內飛散之虞。當在阻隔空間SS內飛散的處理液再次附著於基板W的上表面時，於基板W上產生微粒。When a backflow occurs, there is a possibility that the treatment liquid facing the radially inner direction collides with the treatment liquid facing the radially outer direction, and the treatment liquid may scatter in the blocking space SS. When the processing liquid scattered in the barrier space SS adheres to the upper surface of the substrate W again, particles are generated on the substrate W.

與此實施形態不同，當為未設置有導引面85之構成時，由於處理液排出路徑10的流入口10a配置於基板W的周緣部附近，因此會在基板W的上表面上產生處理液中的逆流。Unlike this embodiment, when the guide surface 85 is not provided, since the inflow port 10a of the processing liquid discharge path 10 is arranged near the periphery of the substrate W, the processing liquid is generated on the upper surface of the substrate W. In the upstream.

在本實施形態中，處理液排出路徑10的流入口10a設置於徑方向中之連接於導引面85的外側方向端之排出路徑區劃面86與導引面85之間的交界。因此，即使產生處理液中的逆流，逆流的發生部位亦非是在基板W上而是在導引面85上。因此，能抑制於基板W上的處理液中產生逆流。因此，能抑制於基板W的上表面產生微粒。In the present embodiment, the inflow port 10a of the processing liquid discharge path 10 is provided at the boundary between the discharge path division surface 86 and the guide surface 85 connected to the outer direction end of the guide surface 85 in the radial direction. Therefore, even if a backflow in the processing liquid occurs, the location where the backflow occurs is not on the substrate W but on the guide surface 85. Therefore, it is possible to suppress the occurrence of backflow in the processing liquid on the substrate W. Therefore, the generation of particles on the upper surface of the substrate W can be suppressed.

在上述基板處理中，在從基板保持工序開始後直至旋乾工序(步驟S8)結束為止的期間中調整第一防護罩71A以及第二防護罩71B的高度位置，以使至少一個防護罩71位於上位置。然而，尤其是在藥液供給工序(步驟S4)中，防護罩71較佳為以下述說明的方式配置。圖9係用以說明在基板處理中防護罩71接住處理液的樣子之示意圖。In the above-mentioned substrate processing, the height positions of the first protective cover 71A and the second protective cover 71B are adjusted during the period from the start of the substrate holding process to the end of the spin-drying process (step S8) so that at least one of the protective covers 71 is located上位。 On position. However, especially in the chemical liquid supply process (step S4), the protective cover 71 is preferably arranged in the manner described below. FIG. 9 is a schematic diagram for explaining how the protective cover 71 catches the processing liquid during substrate processing.

具體而言，在從排出口10b排出處理液(DHF)之期間，使處理液排出路徑10在鉛直方向中位於第一防護罩71A的第一圓環部76A的徑方向內側方向端76a與第二防護罩71B的第二圓環部76B的徑方向內側方向端76b之間。具體而言，防護罩升降單元74係使第一防護罩71A以及第二防護罩71B在鉛直方向中移動，以使處理液排出路徑10位於第一圓環部76A的徑方向內側方向端76a與第二圓環部76B的徑方向內側方向端76b之間(防護罩移動工序)。Specifically, while the processing liquid (DHF) is discharged from the discharge port 10b, the processing liquid discharge path 10 is positioned in the vertical direction at the radially inner end 76a of the first annular portion 76A of the first shield 71A and the first Between the radially inward ends 76b of the second annular portion 76B of the two shields 71B. Specifically, the protective cover raising and lowering unit 74 moves the first protective cover 71A and the second protective cover 71B in the vertical direction so that the processing liquid discharge path 10 is located at the radially inner end 76a of the first annular portion 76A and Between the radially inward ends 76b of the second annular portion 76B (shield moving step).

更詳細而言，使第一防護罩71A移動至上位置或者使第一防護罩71A維持在上位置。藉此，第一防護罩71A係以第一圓環部76A的徑方向內側方向端76a位於比排出口10b還更上方且比延伸設置部66的上端還更下方之方式在鉛直方向中移動。第二防護罩71B係以第二圓環部76B的徑方向內側方向端76b位於比排出口10b還更下方且比環狀構件8的下端還更上方之方式在鉛直方向中移動。In more detail, the first protective cover 71A is moved to the upper position or the first protective cover 71A is maintained in the upper position. Thereby, the first shield 71A moves in the vertical direction such that the radially inner end 76a of the first annular portion 76A is located above the discharge port 10b and below the upper end of the extension portion 66. The second shield 71B moves in the vertical direction so that the radially inner end 76b of the second annular portion 76B is located below the discharge port 10b and above the lower end of the ring member 8.

在處理液從處理液排出路徑10的排出口10b排出時，第一防護罩71A的第一圓環部76A係在鉛直方向中位於比排出口10b還更上方。因此，從排出口10b排出的處理液係通過第一圓環部76A以及第二圓環部76B之間被第一圓筒部75A接住。被第一圓筒部75A接住的處理液會從第一圓筒部75A濺回。When the processing liquid is discharged from the discharge port 10b of the processing liquid discharge path 10, the first annular portion 76A of the first shield 71A is positioned above the discharge port 10b in the vertical direction. Therefore, the processing liquid system discharged from the discharge port 10b passes between the first annular portion 76A and the second annular portion 76B and is caught by the first cylindrical portion 75A. The processing liquid caught by the first cylindrical portion 75A splashes back from the first cylindrical portion 75A.

第二圓環部76B的徑方向內側方向端76b係在鉛直方向中位於比排出口10b還更下方。因此，從第一防護罩71A濺回的處理液係不會移動至比第二防護罩71B還更徑方向內側方向，而是從上方附著於第二圓環部76B或者從徑方向外側方向附著於第二圓筒部75B。因此，能抑制從第一防護罩71A濺回的處理液附著於基板W的下表面。The radially inner end 76b of the second annular portion 76B is located below the discharge port 10b in the vertical direction. Therefore, the processing liquid system splashed back from the first protective cover 71A does not move to the radially inner direction than the second protective cover 71B, but adheres to the second annular portion 76B from above or from the radially outer direction. In the second cylindrical portion 75B. Therefore, it is possible to prevent the processing liquid splashed back from the first protective cover 71A from adhering to the lower surface of the substrate W.

由於第二圓環部76B的徑方向內側方向端76b在鉛直方向中位於比環狀構件8的下端還更上方，因此能抑制從第一防護罩71A濺回的處理液從第二圓環部76B與環狀構件8之間的間隙朝徑方向內側方向移動。Since the radially inner end 76b of the second annular portion 76B is located above the lower end of the ring member 8 in the vertical direction, it is possible to suppress the processing liquid splashed back from the first protective cover 71A from the second annular portion The gap between 76B and the ring member 8 moves in the radially inner direction.

此外，基板W的下表面係被保護液(DIW)保護。因此，能保護基板W的下表面不受於基板W的下表面附近漂浮的處理液的霧氣等影響。再者，在從排出口10b噴出處理液之期間，由於第二圓環部76B的徑方向內側方向端76b位於比排出口10b還更下方且比環狀構件8的下端還更上方，因此能使第二防護罩71B接住從基板W的下表面排出至外側方向的保護液。亦即，能藉由第一防護罩71A接住從基板W的上表面排出的處理液，且能藉由第二防護罩71B接住從基板W的下表面朝外側方向排出的保護液。因此，能一邊避免處理液與保護液混合一邊分別回收處理液以及保護液。In addition, the lower surface of the substrate W is protected by a protective liquid (DIW). Therefore, the lower surface of the substrate W can be protected from the mist or the like of the processing liquid floating in the vicinity of the lower surface of the substrate W. Furthermore, while the treatment liquid is being discharged from the discharge port 10b, since the radially inward end 76b of the second annular portion 76B is located below the discharge port 10b and above the lower end of the ring member 8, it is possible to The second protective cover 71B is caused to catch the protective liquid discharged from the lower surface of the substrate W to the outer direction. That is, the processing liquid discharged from the upper surface of the substrate W can be caught by the first protective cover 71A, and the protective liquid discharged outwardly from the lower surface of the substrate W can be caught by the second protective cover 71B. Therefore, it is possible to separately recover the treatment liquid and the protection liquid while avoiding the mixing of the treatment liquid and the protection liquid.

保護液係藉由離心力朝徑方向外側方向移動並從基板W的下表面到達至環狀構件8的下側傾斜面87。下側傾斜面87係以隨著朝向徑方向外側方向而朝向下方之方式傾斜。The protective liquid is moved in the radially outer direction by centrifugal force, and reaches the lower inclined surface 87 of the ring member 8 from the lower surface of the substrate W. The lower inclined surface 87 is inclined so as to go downward as it goes to the radially outer direction.

因此，保護液係從環狀構件8朝向沿著下側傾斜面87之方向亦即朝向斜下方向飛散並被第二防護罩71B的第二圓筒部75B接住。因此，能抑制保護液從斜上方向飛散。結果，能抑制朝斜上方飛散的處理液進入至第一防護罩71A的第一圓環部76A與第二防護罩71B的第二圓環部76B之間。Therefore, the protective liquid is scattered from the ring member 8 in the direction along the lower inclined surface 87, that is, in the obliquely downward direction, and is caught by the second cylindrical portion 75B of the second shield 71B. Therefore, it is possible to prevent the protective liquid from scattering diagonally upward. As a result, it is possible to suppress that the processing liquid scattered obliquely upward enters between the first annular portion 76A of the first protective cover 71A and the second annular portion 76B of the second protective cover 71B.

依據第一實施形態，使對向構件6與環狀構件8一起移動至阻隔空間區劃位置，藉此藉由基板W、對向構件6以及環狀構件8區劃阻隔空間SS。在形成了阻隔空間SS的狀態下朝基板W的上表面供給惰性氣體，藉此能將阻隔空間SS內的氛圍置換成惰性氣體。藉此，能降低阻隔空間SS內的氧濃度，亦即能降低基板W的上表面附近的氛圍的氧濃度。According to the first embodiment, the opposing member 6 and the ring member 8 are moved to the blocking space division position, whereby the blocking space SS is partitioned by the substrate W, the opposing member 6 and the ring member 8. In the state where the barrier space SS is formed, an inert gas is supplied to the upper surface of the substrate W, whereby the atmosphere in the barrier space SS can be replaced with the inert gas. Thereby, the oxygen concentration in the barrier space SS can be reduced, that is, the oxygen concentration of the atmosphere near the upper surface of the substrate W can be reduced.

阻隔空間SS係限制了氛圍從外部空間OS流入。因此，當將阻隔空間SS內的氛圍一次性地置換成惰性氣體時，容易維持在阻隔空間SS內的氛圍中的氧濃度已被降低的狀態。The barrier space SS restricts the inflow of atmosphere from the external space OS. Therefore, when the atmosphere in the barrier space SS is replaced with an inert gas at once, it is easy to maintain a state where the oxygen concentration in the atmosphere in the barrier space SS has been reduced.

在阻隔空間SS內的氛圍已被置換成惰性氣體的狀態下對基板W的上表面供給處理液，藉此能一邊抑制處理液中的氧濃度的上升一邊藉由處理液處理基板W的上表面。The upper surface of the substrate W is supplied with the processing liquid in a state where the atmosphere in the barrier space SS has been replaced with an inert gas, whereby the upper surface of the substrate W can be processed by the processing liquid while suppressing the increase in oxygen concentration in the processing liquid. .

被供給至基板W的上表面之處理液係藉由離心力朝基板W的上表面的周緣部移動。已到達至基板W的上表面的周緣部之處理液係不會從基板W飛散而是在環狀構件8的導引面85上移動。存在於導引面85的處理液係經由處理液排出路徑10排出至阻隔空間SS外。由於基板W的周緣部與處理液排出路徑10之間存在導引面85，因此基板W的周緣部係充分地遠離對向構件6的延伸設置部66。因此，能抑制從基板W的上表面排出的處理液從對向構件6濺回並再次附著於基板W的上表面。即使假設從基板W的上表面排出的處理液從對向構件6濺回，濺回的處理液的大部分亦會附著於位於比基板W的上表面還更徑方向的外側方向的導引面85。因此，能抑制於基板W的上表面產生微粒。The processing liquid supplied to the upper surface of the substrate W moves toward the peripheral edge of the upper surface of the substrate W by centrifugal force. The processing liquid system that has reached the peripheral edge portion of the upper surface of the substrate W does not scatter from the substrate W but moves on the guide surface 85 of the ring member 8. The processing liquid system existing on the guide surface 85 is discharged to the outside of the blocking space SS via the processing liquid discharge path 10. Since there is a guide surface 85 between the peripheral edge portion of the substrate W and the processing liquid discharge path 10, the peripheral edge portion of the substrate W is sufficiently away from the extended portion 66 of the opposed member 6. Therefore, it is possible to prevent the processing liquid discharged from the upper surface of the substrate W from splashing back from the opposed member 6 and attaching to the upper surface of the substrate W again. Even if it is assumed that the processing liquid discharged from the upper surface of the substrate W is splashed back from the counter member 6, most of the splashed processing liquid will adhere to the guide surface located in a radially outer direction than the upper surface of the substrate W. 85. Therefore, the generation of particles on the upper surface of the substrate W can be suppressed.

藉由以上的結果，能降低基板W的上表面附近的氛圍中的氧濃度，且能抑制基板W的上表面中的微粒的產生。As a result of the above, the oxygen concentration in the atmosphere near the upper surface of the substrate W can be reduced, and the generation of particles on the upper surface of the substrate W can be suppressed.

此外，與第一實施形態不同，在基板W的上表面的周緣部與環狀構件8未充分地接近之情形中，處理液不僅從導引面85以及處理液排出路徑10排出，亦會從間隙G排出。如此，會有導引面85上的處理液分散而成為液滴並從導引面85濺起而再次附著於基板W之虞。在第一實施形態中，由於間隙寬度D2充分地小且基板W的上表面的周緣部與環狀構件8充分地接近，因此處理液不會成為液滴而能從基板W的上表面移動至導引面85。因此，能抑制微粒的產生。In addition, unlike the first embodiment, when the peripheral edge portion of the upper surface of the substrate W and the annular member 8 are not sufficiently close, the processing liquid is not only discharged from the guide surface 85 and the processing liquid discharge path 10, but also from The gap G is discharged. In this way, the processing liquid on the guide surface 85 may be dispersed into droplets, splashed from the guide surface 85 and attached to the substrate W again. In the first embodiment, since the gap width D2 is sufficiently small and the peripheral edge portion of the upper surface of the substrate W is sufficiently close to the ring member 8, the processing liquid does not become droplets and can move from the upper surface of the substrate W to导引面85。 Guide surface 85. Therefore, the generation of particles can be suppressed.

依據第一實施形態，排出路徑寬度D3係比阻隔空間寬度D1還小。因此，能通過處理液排出路徑10之流體的流量為較小的流量。因此，能抑制在處理液經由處理液排出路徑10排出至阻隔空間SS外之期間阻隔空間SS外的氛圍經由處理液排出路徑10流入。因此，在阻隔空間SS內的氛圍已被置換成惰性氣體的狀態下對基板W的上表面供給處理液，藉此能一邊抑制處理液中的氧濃度的上升一邊藉由處理液處理基板W的上表面。According to the first embodiment, the discharge path width D3 is smaller than the barrier space width D1. Therefore, the flow rate of the fluid that can pass through the processing liquid discharge path 10 is a small flow rate. Therefore, it is possible to suppress the inflow of the atmosphere outside the barrier space SS through the process liquid discharge path 10 while the process liquid is discharged to the outside of the barrier space SS through the process liquid discharge path 10. Therefore, by supplying the processing liquid to the upper surface of the substrate W in a state where the atmosphere in the barrier space SS has been replaced with an inert gas, it is possible to treat the substrate W by the processing liquid while suppressing an increase in the oxygen concentration in the processing liquid. Upper surface.

在第一實施形態中，處理液排出路徑10的流入口10a設置於連結於徑方向中的導引面85的外側方向端之排出路徑區劃面86與導引面85之間的交界。因此，即使產生處理液中的逆流，逆流的產生部位亦非為基板W上而是導引面85上。因此，能抑制於基板W上的處理液中產生逆流。因此，能抑制於基板W的上表面產生微粒。In the first embodiment, the inflow port 10a of the processing liquid discharge path 10 is provided at the boundary between the discharge path dividing surface 86 and the guide surface 85 connected to the outer direction end of the guide surface 85 in the radial direction. Therefore, even if a backflow in the treatment liquid occurs, the location where the backflow occurs is not on the substrate W but on the guide surface 85. Therefore, it is possible to suppress the occurrence of backflow in the processing liquid on the substrate W. Therefore, the generation of particles on the upper surface of the substrate W can be suppressed.

與此實施形態不同，亦可於導引面85與排出路徑區劃面86之間設置段差。即使在此種情形中，與未設置導引面85之構成相比，亦能抑制處理液再次附著。然而，會有因為段差而濺起的處理液再次附著於基板W的上表面之虞。如此，會有於基板W的上表面產生微粒之虞。Different from this embodiment, a step can also be provided between the guide surface 85 and the discharge path division surface 86. Even in this case, compared with a configuration where the guide surface 85 is not provided, it is possible to suppress reattachment of the treatment liquid. However, there is a possibility that the processing liquid splashed due to the step difference may adhere to the upper surface of the substrate W again. In this way, there is a risk of generating particles on the upper surface of the substrate W.

因此，依據第一實施形態，環狀構件8具有排出路徑區劃面86，排出路徑區劃面86係與延伸設置部66一起區劃處理液排出路徑10。排出路徑區劃面86以及導引面85係構成於水平方向平坦的單一個平坦面。因此，能使於導引面85上流動的處理液順暢地流入至處理液排出路徑10。因此，能抑制處理液在阻隔空間SS內飛散，從而能抑制因為處理液的飛散導致產生微粒。Therefore, according to the first embodiment, the annular member 8 has the discharge path partition surface 86, and the discharge path partition surface 86 partitions the processing liquid discharge path 10 together with the extension portion 66. The discharge path division surface 86 and the guide surface 85 are formed on a single flat surface that is flat in the horizontal direction. Therefore, the processing liquid flowing on the guide surface 85 can smoothly flow into the processing liquid discharge path 10. Therefore, it is possible to prevent the treatment liquid from scattering in the blocking space SS, and it is possible to suppress the generation of particles due to the scattering of the treatment liquid.

在基板W的旋轉速度與對向構件6以及環狀構件8的旋轉速度之間的差異大之情形中，會有阻隔空間SS內的氣流吝亂之虞。當氣流吝亂時，因為氣流導致力量作用於基板W的上表面的處理液，基板W的上表面會局部性地露出且處理液會在阻隔空間SS內飛散。依據第一實施形態，用以區劃阻隔空間SS之基板W、環狀構件8以及對向構件6係同步旋轉。因此，能抑制在阻隔空間SS內產生氣流的吝亂。In the case where the difference between the rotation speed of the substrate W and the rotation speeds of the opposing member 6 and the annular member 8 is large, the airflow in the blocking space SS may be stingy. When the air flow is stingy, the upper surface of the substrate W will be partially exposed and the processing liquid will be scattered in the blocking space SS due to the force acting on the processing liquid on the upper surface of the substrate W due to the air flow. According to the first embodiment, the substrate W, the ring member 8 and the opposing member 6 for dividing the blocking space SS are synchronously rotated. Therefore, it is possible to suppress the generation of stinginess in the air flow in the blocking space SS.

在第一實施形態中執行預清洗工序，藉此間隙G係被清洗液塞住。因此，在預清洗工序之後開始藥液供給工序時，維持間隙G被清洗液塞住的狀態直至藥液到達至間隙G的附近為止。因此，從開始供給藥液時限制空氣從間隙G流入。因此，在藥液供給時降低阻隔空間SS內的氧濃度。In the first embodiment, the pre-cleaning process is performed, whereby the gap G is blocked by the cleaning liquid. Therefore, when the chemical solution supply process is started after the pre-cleaning process, the state where the gap G is blocked by the cleaning solution is maintained until the chemical solution reaches the vicinity of the gap G. Therefore, the inflow of air from the gap G is restricted from the start of the supply of the chemical solution. Therefore, the oxygen concentration in the barrier space SS is reduced when the chemical solution is supplied.

此外，在後續的清洗工序以及置換液供給工序中，間隙G亦分別被清洗液以及置換液塞住。因此，在對基板W的上表面供給處理液之期間抑制空氣從間隙G流入。In addition, in the subsequent cleaning process and replacement liquid supply process, the gap G is also blocked by the cleaning liquid and the replacement liquid, respectively. Therefore, the inflow of air from the gap G is suppressed while the processing liquid is supplied to the upper surface of the substrate W.

與第一實施形態不同，在未設置有對向構件6之構成中，環狀構件8不會旋轉。因此，會有從基板W的周緣朝徑方向外側方向移動的處理液殘留於導引面85上之虞。會有因為殘留於導引面85上的處理液飛散至氛圍中導致於基板W上產生微粒之虞。Unlike the first embodiment, in the configuration where the facing member 6 is not provided, the ring member 8 does not rotate. Therefore, there is a possibility that the processing liquid that has moved from the peripheral edge of the substrate W toward the outer side in the radial direction may remain on the guide surface 85. There is a possibility that particles may be generated on the substrate W because the processing liquid remaining on the guide surface 85 is scattered into the atmosphere.

因此，在第一實施形態中，由於環狀構件8連結於對向構件6，因此能在排除基板W上的處理液時使環狀構件8與對向構件6一起旋轉。因此，由於處理液難以殘留於導引面85上，因此難以於基板W上產生微粒。此外，用以連結對向構件6以及環狀構件8之複數個連結構件9係設置於處理液排出路徑10內。因此，與連結構件9設置於比處理液排出路徑10還更徑方向內側方向之構成相比，在碰撞至連結構件9的處理液濺回之情形中，該濺回的處理液難以附著於基板W的上表面。Therefore, in the first embodiment, since the ring member 8 is connected to the opposed member 6, the ring member 8 can be rotated together with the opposed member 6 when the processing liquid on the substrate W is removed. Therefore, since the processing liquid is unlikely to remain on the guide surface 85, it is difficult to generate particles on the substrate W. In addition, a plurality of connecting members 9 for connecting the opposing member 6 and the ring member 8 are provided in the processing liquid discharge path 10. Therefore, compared with the configuration in which the connecting member 9 is provided in a radially inner direction than the processing liquid discharge path 10, when the processing liquid hitting the connecting member 9 splashes back, the splashed processing liquid is less likely to adhere to the substrate The upper surface of W.

圖10A以及圖10B係用以說明基板處理的其他例子之示意圖。為了方便說明，在圖10A以及圖10B中省略了連結構件9的圖示。如圖10B所示，在該其他例子的基板處理中，將環狀構件8的內側方向端面84的上端部為與基板W的上表面相同的高度位置時之對向構件6的位置稱為第一阻隔空間區劃位置。第一阻隔空間區劃位置為與圖3所示的阻隔空間區劃位置相同的位置。10A and 10B are schematic diagrams for explaining other examples of substrate processing. For the convenience of description, the illustration of the connecting member 9 is omitted in FIGS. 10A and 10B. As shown in FIG. 10B, in the substrate processing of this other example, the position of the opposed member 6 when the upper end portion of the inner side end surface 84 of the ring member 8 is at the same height position as the upper surface of the substrate W is called the first The location of a blocking space. The first barrier space division position is the same position as the barrier space division position shown in FIG. 3.

如圖10A所示，在該其他例子的基板處理中，在處理液供給工序中對向構件升降單元61(參照圖2)係將對向構件6配置於第二阻隔空間區劃位置。As shown in FIG. 10A, in the substrate processing of this other example, the facing member elevating unit 61 (refer to FIG. 2) arranges the facing member 6 at the second blocking space division position in the processing liquid supply step.

第二阻隔空間區劃位置為在環狀構件8的內側方向端面84的上端部位於比基板W的上表面還更上方的狀態下藉由基板W、對向構件6以及環狀構件8區劃阻隔空間SS時之對向構件6的位置。The second blocking space division position is to divide the blocking space by the substrate W, the facing member 6, and the ring member 8 in a state where the upper end of the inner end surface 84 of the ring member 8 is located above the upper surface of the substrate W. The position of the facing member 6 in SS.

在對向構件6位於第二阻隔空間區劃位置的狀態下，從中央噴嘴11朝基板W的上表面供給藥液等處理液。藉此，藉由環狀構件8的內側方向端面84與基板W的上表面接住處理液並形成有處理液的蓄液101(蓄液形成工序)。In a state where the opposing member 6 is positioned at the second blocking space division position, a processing liquid such as a chemical liquid is supplied from the center nozzle 11 to the upper surface of the substrate W. Thereby, the liquid reservoir 101 of the processing liquid is formed by receiving the processing liquid by the inner end surface 84 of the ring member 8 and the upper surface of the substrate W (a liquid storage forming step).

因此，藉由蓄液101中的處理液處理基板W的上表面。因此，只要將形成蓄液101所需要的量的處理液供給至基板W的上表面即能處理基板W的上表面。因此，與供給至基板W的上表面的處理液未被內側方向端面84接住而是被排出至基板W外之構成相比能降低處理液的消耗量。第二阻隔空間區劃位置亦稱為蓄液形成位置。Therefore, the upper surface of the substrate W is processed by the processing liquid in the reservoir 101. Therefore, the upper surface of the substrate W can be processed as long as the amount of processing liquid required to form the reservoir 101 is supplied to the upper surface of the substrate W. Therefore, compared with a configuration in which the processing liquid supplied to the upper surface of the substrate W is discharged to the outside of the substrate W without being caught by the inner end surface 84, the consumption of the processing liquid can be reduced. The second blocking space division position is also called the reservoir formation position.

而且，如圖10B所示，在形成蓄液101後經過預定時間後，對向構件升降單元61(參照圖2)係使對向構件6移動至第一阻隔空間區劃位置。亦即，使環狀構件8的內側方向端面84的上端部移動至與基板W的上表面相同的高度位置。圖10B係以二點鏈線圖示對向構件6位於第二阻隔空間區劃位置時之對向構件6以及環狀構件8。Furthermore, as shown in FIG. 10B, after a predetermined time has elapsed after the formation of the reservoir 101, the facing member lifting unit 61 (refer to FIG. 2) moves the facing member 6 to the first blocking space division position. That is, the upper end portion of the inner end surface 84 of the ring member 8 is moved to the same height position as the upper surface of the substrate W. FIG. 10B shows the opposing member 6 and the ring member 8 when the opposing member 6 is located at the second blocking space division position with a two-dot chain line.

使對向構件6移動至第一阻隔空間區劃位置，藉此存在於基板W的上表面之處理液係從內側方向端面84所為的液體接住狀態被解放。因此，處理液係藉由離心力朝徑方向外側方向移動，蓄液101係從基板W的上表面被排除(蓄液排除工序)。The opposing member 6 is moved to the first blocking space division position, whereby the processing liquid system present on the upper surface of the substrate W is released from the liquid receiving state of the end surface 84 in the inner direction. Therefore, the processing liquid system moves in the radially outer direction by the centrifugal force, and the reservoir liquid 101 is removed from the upper surface of the substrate W (liquid reservoir removal step).

藉由離心力移動至基板W的周緣部的外側方向之處理液係經由導引面85順暢地流入至處理液排出路徑10(參照圖8)。因此，能抑制於基板W的上表面產生微粒。The processing liquid system moved to the outer direction of the peripheral edge portion of the substrate W by the centrifugal force flows smoothly into the processing liquid discharge path 10 via the guide surface 85 (refer to FIG. 8 ). Therefore, the generation of particles on the upper surface of the substrate W can be suppressed.

接著，說明第一實施形態的基板處理裝置1的變化例。圖11A以及圖11B係用以說明第一實施形態的基板處理裝置1的變化例之示意圖。為了方便說明，在圖11A以及圖11B省略了連結構件9的圖示。Next, a modification example of the substrate processing apparatus 1 of the first embodiment will be described. 11A and 11B are schematic diagrams for explaining a modified example of the substrate processing apparatus 1 of the first embodiment. For convenience of description, the illustration of the connecting member 9 is omitted in FIGS. 11A and 11B.

如圖11A所示，在第一實施形態的變化例的環狀構件8中導引面85為傾斜面。變化例的導引面85係以隨著朝向徑方向外側方向而朝向上方之方式傾斜。此外，在第一實施形態的變化例的環狀構件8中，未設置下側傾斜面87，下側平坦面88係連結於內側方向端面84的下方端。As shown in FIG. 11A, the guide surface 85 is an inclined surface in the ring member 8 of the modification of the first embodiment. The guide surface 85 of the modified example is inclined so as to go upward as it goes to the radially outer direction. In addition, in the ring-shaped member 8 of the modification of the first embodiment, the lower inclined surface 87 is not provided, and the lower flat surface 88 is connected to the lower end of the inner end surface 84.

此外，在此變化例中，對向構件6的寬幅部80的平坦下表面80a與對向構件6的連結部81的傾斜下表面81a之間的交界6c係位於比環狀構件8的導引面85與環狀構件8的排出路徑區劃面86之間的交界8c還更徑方向內側方向。In addition, in this modification, the boundary 6c between the flat lower surface 80a of the wide portion 80 of the opposing member 6 and the inclined lower surface 81a of the connecting portion 81 of the opposing member 6 is located more than the guide of the ring member 8. The boundary 8c between the guide surface 85 and the discharge path dividing surface 86 of the ring member 8 is further radially inward.

在對向構件6位於阻隔空間區劃位置時，內側方向端面84的上方端係位於與基板W的上表面相同的高度。When the facing member 6 is located at the blocking space division position, the upper end of the inner end surface 84 is located at the same height as the upper surface of the substrate W.

此外，在此變化例中亦可明瞭：在俯視觀看時的大部分的部位中阻隔空間寬度D1係比排出路徑寬度D3還大，阻隔空間寬度D1的平均值係比排出路徑寬度D3還大。In addition, in this modification, it is also clear that the barrier space width D1 is greater than the discharge path width D3 in most parts when viewed from above, and the average value of the barrier space width D1 is greater than the discharge path width D3.

在第一實施形態的基板處理裝置1所為的基板處理中，在對向構件6位於阻隔空間區劃位置的狀態下，從中央噴嘴11朝基板W的上表面供給藥液等處理液。藉此，如圖11A所示，藉由環狀構件8的導引面85與基板W的上表面接住處理液並形成有處理液的蓄液101(蓄液形成工序)。因此，藉由蓄液101中的處理液處理基板W的上表面。因此，只要將形成蓄液101所需要的量的處理液供給至基板W的上表面即能處理基板W的上表面。因此，與供給至基板W的上表面的處理液未被傾斜的導引面85接住而是被排出至基板W外之構成相比能降低處理液的消耗量。In the substrate processing performed by the substrate processing apparatus 1 of the first embodiment, a processing liquid such as a chemical solution is supplied to the upper surface of the substrate W from the central nozzle 11 in a state where the opposed member 6 is located at the partitioned space. As a result, as shown in FIG. 11A, the guide surface 85 of the ring member 8 and the upper surface of the substrate W catch the processing liquid to form the processing liquid reservoir 101 (liquid reservoir forming step). Therefore, the upper surface of the substrate W is processed by the processing liquid in the reservoir 101. Therefore, the upper surface of the substrate W can be processed as long as the amount of processing liquid required to form the reservoir 101 is supplied to the upper surface of the substrate W. Therefore, compared with a configuration in which the processing liquid supplied to the upper surface of the substrate W is not caught by the inclined guide surface 85 but is discharged to the outside of the substrate W, the consumption of the processing liquid can be reduced.

而且，如圖11B所示，在形成蓄液101後經過預定時間後，自轉馬達23係使基板W的旋轉加速(基板加速工序)。具體而言，基板W的旋轉速度係從預定的蓄液形成速度(例如10rpm)變更成蓄液排出速度(例如1000rpm)。在此變化例中，導引面85係以隨著朝向徑方向外側方向而朝向上方之方式傾斜。因此，使基板W的旋轉加速從而使離心力作用於蓄液101，藉此能使處理液順暢地躍上導引面85。因此，處理液係朝徑方向外側方向移動，蓄液101係從基板W的上表面被排除(蓄液排除工序)。已躍上導引面85之處理液係順暢地流入至處理液排出路徑10。因此，能抑制於基板W的上表面產生微粒。Furthermore, as shown in FIG. 11B, after a predetermined time has elapsed after the formation of the reservoir 101, the rotation motor 23 accelerates the rotation of the substrate W (substrate acceleration step). Specifically, the rotation speed of the substrate W is changed from a predetermined liquid accumulation forming speed (for example, 10 rpm) to a liquid accumulation discharge speed (for example, 1000 rpm). In this modified example, the guide surface 85 is inclined so as to go upward as it goes to the radially outer direction. Therefore, the rotation of the substrate W is accelerated to cause centrifugal force to act on the liquid reservoir 101, whereby the processing liquid can be smoothly jumped onto the guide surface 85. Therefore, the processing liquid system moves toward the outer side in the radial direction, and the reservoir liquid 101 is removed from the upper surface of the substrate W (liquid reservoir removal step). The processing liquid that has jumped onto the guide surface 85 smoothly flows into the processing liquid discharge path 10. Therefore, the generation of particles on the upper surface of the substrate W can be suppressed.

在此，在平坦下表面80a與傾斜下表面81a之間的交界6c位於俯視觀看時與導引面85與排出路徑區劃面86之間的交界8c重疊的位置之情形以及交界6c比交界8c還更位於徑方向內側方向之情形中，躍上導引面85之處理液會有碰撞至傾斜下表面81a之虞。如此，會有處理液阻塞從而於導引面85上的處理液中產生逆流之虞，該逆流係成為產生微粒的原因。Here, the boundary 6c between the flat lower surface 80a and the inclined lower surface 81a is located at a position overlapping with the boundary 8c between the guide surface 85 and the discharge path division surface 86 when viewed from above, and the boundary 6c is further than the boundary 8c. In the case where it is located further in the radial direction, the treatment liquid leaping on the guide surface 85 may collide with the inclined lower surface 81a. In this way, there is a possibility that the treatment liquid will be blocked and a backflow may be generated in the treatment liquid on the guide surface 85, and this backflow may be a cause of the generation of particles.

如圖11A以及圖11B所示，只要構成為平坦下表面80a與傾斜下表面81a之間的交界6c比導引面85與排出路徑區劃面86之間的交界8c還更位於徑方向內側方向，則躍上導引面85之處理液不會碰撞至傾斜下表面81a而是碰撞至平坦下表面80a。如此，處理液不會阻塞而是順暢地流入至處理液排出路徑10。As shown in FIGS. 11A and 11B, as long as it is configured such that the boundary 6c between the flat lower surface 80a and the inclined lower surface 81a is located further in the radial direction than the boundary 8c between the guide surface 85 and the discharge path dividing surface 86, Then, the treatment liquid leaping on the guiding surface 85 does not collide with the inclined lower surface 81a but collides with the flat lower surface 80a. In this way, the processing liquid flows into the processing liquid discharge path 10 smoothly without clogging.

[第二實施形態][Second Embodiment]

圖12係顯示本發明的第二實施形態的基板處理裝置1所具備的處理單元2P的概略構成之示意性的局部剖視圖。在圖12以及後述的圖13中，針對於上面所說明的圖1至圖11B所示的構成同等的構成附上與圖1等相同的元件符號並省略說明。FIG. 12 is a schematic partial cross-sectional view showing the schematic configuration of the processing unit 2P included in the substrate processing apparatus 1 according to the second embodiment of the present invention. In FIG. 12 and FIG. 13 to be described later, the same reference numerals as those in FIG. 1 and the like are attached to the same structures as those shown in FIG. 1 to FIG. 11B described above, and descriptions thereof are omitted.

在第二實施形態的處理單元2P中，基板保持的形式係與第一實施形態的處理單元2(參照圖2)不同。In the processing unit 2P of the second embodiment, the form of substrate holding is different from that of the processing unit 2 (see FIG. 2) of the first embodiment.

具體而言，處理單元2P的自轉夾具5P係未包含吸引單元27，而是包含用以把持基板W的周緣之複數個夾具銷20。複數個夾具銷20係彼此於周方向(旋轉方向R)隔著間隔配置於自轉基座21的上表面。複數個夾具銷20係可在閉狀態與開狀態之間進行開閉，該閉狀態係複數個夾具銷20接觸至基板W的周端並把持基板W之狀態，該開狀態係複數個夾具銷20已從基板W的周端退避之狀態。Specifically, the rotation jig 5P of the processing unit 2P does not include the suction unit 27, but includes a plurality of jig pins 20 for holding the periphery of the substrate W. The plurality of clamp pins 20 are arranged on the upper surface of the rotation base 21 at intervals in the circumferential direction (rotation direction R). The plurality of clamp pins 20 can be opened and closed between a closed state and an open state. The closed state is a state in which the plurality of clamp pins 20 contact the peripheral end of the substrate W and hold the substrate W. The open state is a plurality of clamp pins 20 The state of retreating from the peripheral end of the substrate W.

再者，第二實施形態的處理單元2P係未包含複數個第一下表面噴嘴12以及複數個第二下表面噴嘴13，而是包含下表面噴嘴14。Furthermore, the processing unit 2P of the second embodiment does not include a plurality of first lower surface nozzles 12 and a plurality of second lower surface nozzles 13, but includes a lower surface nozzle 14.

下表面噴嘴14係***至中空的旋轉軸22以及在自轉基座21的上表面中央部呈開口之貫通孔21a。下表面噴嘴14的噴出口14a係從自轉基座21的上表面露出。下表面噴嘴14的噴出口14a係從下方與基板W的下表面(下側的表面)的中央區域對向。The lower surface nozzle 14 is inserted into the hollow rotating shaft 22 and the through hole 21 a that opens at the center of the upper surface of the rotation base 21. The ejection port 14 a of the lower surface nozzle 14 is exposed from the upper surface of the rotation base 21. The ejection port 14a of the lower surface nozzle 14 opposes the central area of the lower surface (lower surface) of the substrate W from below.

於下表面噴嘴14連接有共通配管46的一端，共通配管46係將清洗液以及置換液共通地導引至下表面噴嘴14。於共通配管46的另一端連接有下側清洗液配管47以及下側置換液配管48，下側清洗液配管47係將清洗液導引至共通配管46，下側置換液配管48係將置換液導引至共通配管46。One end of a common pipe 46 is connected to the lower surface nozzle 14, and the common pipe 46 commonly guides the cleaning liquid and the replacement liquid to the lower surface nozzle 14. The other end of the common pipe 46 is connected to a lower cleaning solution pipe 47 and a lower replacement solution pipe 48. The lower cleaning solution pipe 47 guides the cleaning solution to the common pipe 46, and the lower replacement solution pipe 48 takes the replacement solution. Lead to the common pipe 46.

當打開夾設於下側清洗液配管47的下側清洗液閥57時，從下表面噴嘴14以連續流動之方式朝基板W的下表面的中央區域噴出清洗液。當打開夾設於下側置換液配管48的下側置換液閥58時，從下表面噴嘴14以連續流動之方式朝基板W的下表面的中央區域噴出置換液。When the lower cleaning liquid valve 57 interposed between the lower cleaning liquid pipe 47 is opened, the cleaning liquid is sprayed from the lower surface nozzle 14 toward the center area of the lower surface of the substrate W in a continuous flow. When the lower replacement liquid valve 58 interposed between the lower replacement liquid piping 48 is opened, the replacement liquid is sprayed from the lower surface nozzle 14 toward the center area of the lower surface of the substrate W in a continuous flow.

藉由下表面噴嘴14與自轉基座21的貫通孔21a之間的空間形成下側氣體流路90。下側氣體流路90係連接於惰性氣體配管49，惰性氣體配管49係插通於旋轉軸22的內周面與下表面噴嘴14之間的空間。當打開夾設於惰性氣體配管49的惰性氣體閥59時，惰性氣體係從下側氣體流路90朝基板W的下表面的中央部的周圍的部分噴出。The lower gas flow path 90 is formed by the space between the lower surface nozzle 14 and the through hole 21 a of the rotation base 21. The lower gas flow path 90 is connected to the inert gas piping 49, and the inert gas piping 49 is inserted into the space between the inner peripheral surface of the rotating shaft 22 and the lower surface nozzle 14. When the inert gas valve 59 interposed between the inert gas piping 49 is opened, the inert gas system is ejected from the lower gas flow path 90 toward the periphery of the central portion of the lower surface of the substrate W.

下表面噴嘴14為下側清洗液供給單元的一例，用以對基板W的下表面供給清洗液。此外，下表面噴嘴14為下側置換液供給單元的一例，用以對基板W的下表面供給置換液。此外，下表面噴嘴14為下側惰性氣體供給單元的一例，用以對基板W的下表面供給惰性氣體。The lower surface nozzle 14 is an example of a lower cleaning liquid supply unit, and is used to supply a cleaning liquid to the lower surface of the substrate W. In addition, the lower surface nozzle 14 is an example of a lower replacement liquid supply unit for supplying a replacement liquid to the lower surface of the substrate W. In addition, the lower surface nozzle 14 is an example of a lower inert gas supply unit for supplying inert gas to the lower surface of the substrate W.

處理單元2P所具備的對向構件6、環狀構件8以及連結構件9係分別具有與第一實施形態的處理單元2所具備的對向構件6、環狀構件8以及連結構件9大致相同的形狀。然而，處理單元2P所具備的環狀構件8的構造係與第一實施形態的環狀構件8稍微不同。圖13係從上方觀看第二實施形態的處理單元2P所具備的環狀構件8的周邊之圖。The opposing member 6, the ring member 8, and the connecting member 9 included in the processing unit 2P are substantially the same as the opposing member 6, the ring member 8, and the connecting member 9 included in the processing unit 2 of the first embodiment. shape. However, the structure of the ring member 8 included in the processing unit 2P is slightly different from that of the ring member 8 of the first embodiment. FIG. 13 is a view of the periphery of the ring member 8 included in the processing unit 2P of the second embodiment viewed from above.

於處理單元2P所具備的環狀構件8形成有複數個凹部8a，複數個凹部8a係用以避免與複數個夾具銷20的干擾。複數個凹部8a係設置成與複數個夾具銷20相同的數量，並以與夾具銷20彼此之間的間隔相同的間隔於旋轉方向R排列。The annular member 8 provided in the processing unit 2P is formed with a plurality of recesses 8 a, and the plurality of recesses 8 a are used to avoid interference with the plurality of clamp pins 20. The plurality of recesses 8a are provided in the same number as the plurality of clamp pins 20, and are arranged in the rotation direction R at the same interval as the interval between the clamp pins 20.

在第二實施形態的基板處理裝置1中，能執行與第一實施形態的基板處理裝置1同樣的基板處理(參照圖6至圖9)。然而，在第二實施形態的基板處理裝置1所為的基板處理中，藉由從下表面噴嘴14噴出清洗液或者置換液從而保護基板W的下表面(下表面保護工序、保護液供給工序)。在第二實施形態中，下表面噴嘴14係作為保護液供給單元發揮作用。此外，亦可朝基板W的下表面噴吹惰性氣體，藉此藉由惰性氣體置換基板W的下表面與自轉基座21之間的空間中的氛圍。在此情形中，能更抑制空氣(氧)朝阻隔空間SS流入。In the substrate processing apparatus 1 of the second embodiment, the same substrate processing as the substrate processing apparatus 1 of the first embodiment can be performed (refer to FIGS. 6 to 9). However, in the substrate processing performed by the substrate processing apparatus 1 of the second embodiment, the lower surface of the substrate W is protected by spraying the cleaning liquid or the replacement liquid from the lower surface nozzle 14 (lower surface protection step, protection liquid supply step). In the second embodiment, the lower surface nozzle 14 functions as a protection liquid supply unit. In addition, an inert gas may also be sprayed toward the lower surface of the substrate W, thereby replacing the atmosphere in the space between the lower surface of the substrate W and the rotation base 21 by the inert gas. In this case, the inflow of air (oxygen) into the blocking space SS can be suppressed more.

依據第二實施形態，達成與第一實施形態同樣的功效。此外，在第二實施形態中亦能執行圖10A以及圖10B所示的基板處理，且亦能應用圖11A以及圖11B所示的變化例。According to the second embodiment, the same effect as the first embodiment is achieved. In addition, in the second embodiment, the substrate processing shown in FIGS. 10A and 10B can also be performed, and the modified example shown in FIGS. 11A and 11B can also be applied.

[第三實施形態][Third Embodiment]

圖14係顯示本發明的第三實施形態的基板處理裝置1所具備的處理單元2Q的概略構成之示意性的局部剖視圖。在圖14以及後述的圖15至圖17中，針對與上面所說明的圖1至圖13所示的構成同等的構成附上與圖1等相同的元件符號並省略說明。FIG. 14 is a schematic partial cross-sectional view showing the schematic configuration of the processing unit 2Q included in the substrate processing apparatus 1 according to the third embodiment of the present invention. In FIG. 14 and FIGS. 15 to 17 described later, the same reference numerals as those in FIG. 1 and the like are attached to the same configuration as the configuration shown in FIGS. 1 to 13 described above, and the description is omitted.

在第三實施形態的處理單元2Q中，對向構件6Q的延伸設置部66Q與環狀構件8Q係與第一實施形態的處理單元2(參照圖2)不同。圖15係第三實施形態的處理單元2Q所具備的對向構件6Q以及環狀構件8Q的周邊的剖視圖。In the processing unit 2Q of the third embodiment, the extended portion 66Q of the facing member 6Q and the ring member 8Q are different from the processing unit 2 (see FIG. 2) of the first embodiment. 15 is a cross-sectional view of the periphery of the facing member 6Q and the ring member 8Q included in the processing unit 2Q of the third embodiment.

第三實施形態的對向構件6Q的延伸設置部66Q係包含：寬幅部110，係鉛直方向的寬度比圓板部65還大；以及連結部111，係連結圓板部65與寬幅部110。鉛直方向中的連結部111的寬度係隨著朝向徑方向外側方向而變大。The extended portion 66Q of the opposing member 6Q of the third embodiment includes: a wide portion 110 whose width in the vertical direction is larger than that of the disc portion 65; and a connecting portion 111 that connects the disc portion 65 and the wide portion 110. The width of the connecting portion 111 in the vertical direction increases as it goes toward the radially outer direction.

連結部111係具有傾斜下表面111a，傾斜下表面111a係連結於對向面6a且以隨著朝向徑方向外側方向而朝向下方之方式傾斜。寬幅部110係具有：鉛直圓筒面110a，係連結於傾斜下表面111a並朝鉛直方向延伸；以及平坦下表面110b，係連結於鉛直圓筒面110a的下端且於水平方向呈平坦。The connecting portion 111 has an inclined lower surface 111a, and the inclined lower surface 111a is connected to the facing surface 6a and is inclined so as to go downward as it goes toward the radially outer direction. The wide portion 110 has a vertical cylindrical surface 110a which is connected to the inclined lower surface 111a and extends in the vertical direction; and a flat lower surface 110b which is connected to the lower end of the vertical cylindrical surface 110a and is flat in the horizontal direction.

導引面85係連結於內側方向端面84的上方端與排出路徑區劃面86的徑方向內側方向端。導引面85係於水平方向呈平坦。排出路徑區劃面86係包含：傾斜區劃面86A，係連結於導引面85的徑方向外側方向端，並以隨著朝向徑方向外側方向而朝向下方之方式傾斜；以及鉛直區劃面86B，係連結於傾斜區劃面86A的徑方向外側方向端並朝鉛直方向延伸。The guide surface 85 is connected to the upper end of the inner end surface 84 and the radial inner end of the discharge path division surface 86. The guide surface 85 is flat in the horizontal direction. The discharge path division surface 86 includes: an inclined division surface 86A, which is connected to the radially outer end of the guide surface 85, and is inclined downward as it goes toward the radial outer direction; and a vertical division surface 86B, which is It is connected to the radially outer end of the inclined partition surface 86A and extends in the vertical direction.

第三實施形態的處理液排出路徑10Q係包含：傾斜排出路徑120，係連接於阻隔空間SS，並被傾斜下表面111a與傾斜區劃面86A區劃；以及鉛直排出路徑121，係連接於傾斜排出路徑120，並被鉛直圓筒面110a與鉛直區劃面86B區劃。處理液排出路徑10Q的流入口10Qa係設置於傾斜排出路徑120的徑方向內側方向端。處理液排出路徑10Q的排出口10Qb係設置於鉛直排出路徑121的下方端。The processing liquid discharge path 10Q of the third embodiment includes: an inclined discharge path 120 connected to the blocking space SS and divided by the inclined lower surface 111a and the inclined partition surface 86A; and a vertical discharge path 121 connected to the inclined discharge path 120, and is divided by the vertical cylindrical surface 110a and the vertical division surface 86B. The inflow port 10Qa of the processing liquid discharge path 10Q is provided at the radially inner end of the inclined discharge path 120. The discharge port 10Qb of the processing liquid discharge path 10Q is provided at the lower end of the vertical discharge path 121.

處理液排出路徑10Q的寬度(排出路徑寬度D3)為傾斜區劃面86A與傾斜下表面111a之間的距離或者鉛直區劃面86B與鉛直圓筒面110a之間的距離。在第三實施形態中亦可明瞭：在俯視觀看時的大部分的部位中阻隔空間寬度D1係比排出路徑寬度D3還大，阻隔空間寬度D1的平均值係比排出路徑寬度D3還大。The width of the processing liquid discharge path 10Q (discharge path width D3) is the distance between the inclined section plane 86A and the inclined lower surface 111a or the distance between the vertical section plane 86B and the vertical cylindrical surface 110a. In the third embodiment, it is also clear that the barrier space width D1 is larger than the discharge path width D3 in most parts when viewed from above, and the average value of the barrier space width D1 is larger than the discharge path width D3.

在第三實施形態中，在對向構件6位於阻隔空間區劃位置時，內側方向端面84的上方端以及導引面85係位於與基板W的上表面相同的高度。In the third embodiment, when the facing member 6 is located at the blocking space division position, the upper end of the inner end surface 84 and the guide surface 85 are located at the same height as the upper surface of the substrate W.

在第三實施形態的基板處理裝置1中，能執行與第一實施形態的基板處理裝置1同樣的基板處理(參照圖6至圖7F)。In the substrate processing apparatus 1 of the third embodiment, the same substrate processing as the substrate processing apparatus 1 of the first embodiment can be performed (refer to FIGS. 6 to 7F).

接著，說明在第三實施形態的基板處理中處理液從阻隔空間SS排出時的樣子。圖16係用以說明使用了第三實施形態的基板處理裝置1的基板處理之示意圖。Next, a description will be given of how the processing liquid is discharged from the barrier space SS in the substrate processing of the third embodiment. FIG. 16 is a schematic diagram for explaining substrate processing using the substrate processing apparatus 1 of the third embodiment.

離心力作用於存在於基板W的上表面的處理液，環狀構件8Q係接近地配置於基板W的上表面的周緣部。因此，已到達至基板W的上表面的周緣部之處理液係不會從基板W的周緣與環狀構件8Q之間的間隙G落下至下方，而是從基板W的上表面的周緣部移動至徑方向外側方向並到達至導引面85。亦即，導引面85係藉由基板W的旋轉所致使的離心力使存在於基板W的上表面的處理液移動至比基板W的上表面的周緣部還更徑方向外側方向。間隙G係被處理液塞住。The centrifugal force acts on the processing liquid present on the upper surface of the substrate W, and the ring-shaped member 8Q is arranged close to the peripheral edge of the upper surface of the substrate W. Therefore, the processing liquid system that has reached the peripheral edge of the upper surface of the substrate W does not fall down from the gap G between the peripheral edge of the substrate W and the ring member 8Q, but moves from the peripheral edge of the upper surface of the substrate W To the outer direction in the radial direction and reach the guide surface 85. That is, the guide surface 85 moves the processing liquid present on the upper surface of the substrate W to a radially outer direction than the peripheral edge portion of the upper surface of the substrate W due to the centrifugal force caused by the rotation of the substrate W. The gap G is blocked by the treatment liquid.

已於導引面85上移動的處理液係於導引面85上朝徑方向外側方向移動並流入至處理液排出路徑10Q的流入口10Qa。流入至處理液排出路徑10Q的流入口10Qa之處理液係於傾斜排出路徑120內朝徑方向外側方向移動後，於鉛直排出路徑121內朝下方移動。之後，處理液係從排出口10Qb排出。The processing liquid that has moved on the guide surface 85 moves in the radially outer direction on the guide surface 85 and flows into the inflow port 10Qa of the processing liquid discharge path 10Q. The processing liquid flowing into the inflow port 10Qa of the processing liquid discharge path 10Q moves in the radially outer direction in the inclined discharge path 120 and then moves downward in the vertical discharge path 121. After that, the treatment liquid is discharged from the discharge port 10Qb.

導引面85上的處理液會有碰撞至對向構件6Q的延伸設置部66的傾斜下表面111a之情形。在此情形中，於導引面85上的處理液中產生逆流(朝向徑方向內側方向的流動)，並藉由該逆流的產生而形成覆液100。The processing liquid on the guide surface 85 may collide with the inclined lower surface 111a of the extending portion 66 of the facing member 6Q. In this case, a backflow (a flow toward the inner side of the radial direction) is generated in the treatment liquid on the guide surface 85, and the coating liquid 100 is formed by the generation of the backflow.

在第三實施形態中，處理液排出路徑10Q的流入口10Qa係設置於連結於徑方向中的導引面85的外側方向端之排出路徑區劃面86Q與導引面85之間的交界。因此，即使產生處理液中的逆流，逆流的產生部位亦非為基板W上而是導引面85上。因此，能抑制於基板W的處理液中產生逆流。因此，能抑制於基板W的上表面產生微粒。再者，依據第三實施形態，達成與第一實施形態同樣的功效。In the third embodiment, the inflow port 10Qa of the processing liquid discharge path 10Q is provided at the boundary between the discharge path division surface 86Q and the guide surface 85 connected to the outer direction end of the guide surface 85 in the radial direction. Therefore, even if a backflow in the treatment liquid occurs, the location where the backflow occurs is not on the substrate W but on the guide surface 85. Therefore, it is possible to suppress the occurrence of backflow in the processing liquid on the substrate W. Therefore, the generation of particles on the upper surface of the substrate W can be suppressed. Furthermore, according to the third embodiment, the same effect as the first embodiment is achieved.

與第一實施形態同樣地，在第三實施形態中亦可執行基板處理的其他例子。圖17係用以說明使用了第三實施形態的基板處理裝置1的基板處理的其他例子之示意圖。在其他例子的基板處理中，將上面所說明的圖16所示的對向構件6Q的位置稱為第一阻隔空間區劃位置。對向構件6Q位於第一阻隔空間區劃位置時，環狀構件8Q的內側方向端面84的上端部位於與基板W的上表面相同的高度位置。As in the first embodiment, other examples of substrate processing can also be performed in the third embodiment. FIG. 17 is a schematic diagram for explaining another example of substrate processing using the substrate processing apparatus 1 of the third embodiment. In the substrate processing of another example, the position of the opposed member 6Q shown in FIG. 16 described above is referred to as the first barrier space division position. When the facing member 6Q is located at the first blocking space division position, the upper end portion of the inner end surface 84 of the ring-shaped member 8Q is located at the same height position as the upper surface of the substrate W.

如圖17所示，在處理液供給工序中，對向構件升降單元61(參照圖14)係將對向構件6Q配置於第二阻隔空間區劃位置。第二阻隔空間區劃位置為環狀構件8Q的內側方向端面84的上端部位於比基板W的上表面還更上方的狀態下藉由基板W、對向構件6Q以及環狀構件8Q區劃阻隔空間SS時之對向構件6Q的位置。As shown in FIG. 17, in the process liquid supply process, the facing member raising and lowering unit 61 (refer to FIG. 14) arrange|positions the facing member 6Q in the 2nd blocking space division position. The second blocking space division position is such that the upper end of the inner end surface 84 of the ring member 8Q is located above the upper surface of the substrate W. The blocking space SS is divided by the substrate W, the facing member 6Q, and the ring member 8Q. The position of the facing member 6Q at the time.

在對向構件6Q位於第二阻隔空間區劃位置的狀態下，從中央噴嘴11(參照圖14)朝基板W的上表面供給藥液等處理液。藉此，藉由環狀構件8Q的內側方向端面84與基板W的上表面接住處理液從而形成處理液的蓄液101(蓄液形成工序)。因此，藉由蓄液101中的處理液處理基板W的上表面。因此，只要將形成蓄液101所需要的量的處理液供給至基板W的上表面即能處理基板W的上表面。因此，與供給至基板W的上表面的處理液未被內側方向端面84接住而是被排出至基板W外之構成相比能降低處理液的消耗量。In a state where the facing member 6Q is located at the second blocking space division position, a processing liquid such as a chemical liquid is supplied to the upper surface of the substrate W from the central nozzle 11 (refer to FIG. 14 ). Thereby, the liquid reservoir 101 of the processing liquid is formed by the inner side end surface 84 of the ring member 8Q and the upper surface of the substrate W receiving the processing liquid (liquid reservoir forming step). Therefore, the upper surface of the substrate W is processed by the processing liquid in the reservoir 101. Therefore, the upper surface of the substrate W can be processed as long as the amount of processing liquid required to form the reservoir 101 is supplied to the upper surface of the substrate W. Therefore, compared with a configuration in which the processing liquid supplied to the upper surface of the substrate W is discharged to the outside of the substrate W without being caught by the inner end surface 84, the consumption of the processing liquid can be reduced.

而且，在形成蓄液101後經過預定時間後，對向構件升降單元61係使對向構件6Q移動至第一阻隔空間區劃位置。亦即，使環狀構件8Q的內側方向端面84的上端部移動至與基板W的上表面相同的高度位置(參照圖16)。藉此，存在於基板W的上表面之處理液係從內側方向端面84所為的液體接住狀態被解放。因此，處理液係藉由離心力朝徑方向外側方向移動，蓄液101係從基板W的上表面被排除(蓄液排除工序)。Furthermore, after a predetermined time has elapsed after the formation of the reservoir 101, the facing member elevating unit 61 moves the facing member 6Q to the first blocking space division position. That is, the upper end portion of the inner end surface 84 of the ring member 8Q is moved to the same height position as the upper surface of the substrate W (see FIG. 16). Thereby, the processing liquid existing on the upper surface of the substrate W is released from the liquid receiving state of the end surface 84 in the inner direction. Therefore, the processing liquid system moves in the radially outer direction by the centrifugal force, and the reservoir liquid 101 is removed from the upper surface of the substrate W (liquid reservoir removal step).

藉由離心力移動至基板W的周緣部的外側方向之處理液係經由導引面85順暢地流入至處理液排出路徑10(參照圖16)。因此，能抑制於基板W的上表面產生微粒。The processing liquid system moved to the outer direction of the peripheral edge portion of the substrate W by the centrifugal force flows smoothly into the processing liquid discharge path 10 via the guide surface 85 (see FIG. 16). Therefore, the generation of particles on the upper surface of the substrate W can be suppressed.

[第四實施形態][Fourth Embodiment]

圖18係顯示本發明的第四實施形態的基板處理裝置1所具備的處理單元2R的概略構成之示意性的局部剖視圖。在圖18中，針對與上面所說明的圖1至圖17所示的構成同等的構成附上與圖1等相同的元件符號並省略說明。FIG. 18 is a schematic partial cross-sectional view showing the schematic configuration of the processing unit 2R included in the substrate processing apparatus 1 according to the fourth embodiment of the present invention. In FIG. 18, the same reference numerals as those in FIG. 1 and the like are attached to the configurations equivalent to the configurations shown in FIGS. 1 to 17 described above, and the description is omitted.

在第四實施形態的處理單元2R中，基板保持的形式係與第三實施形態的處理單元2Q(參照圖14)不同。第四實施形態的處理單元2R為組合了第三實施形態的對向構件6Q與環狀構件8Q以及第二實施形態的自轉夾具5P之構成。The processing unit 2R of the fourth embodiment differs from the processing unit 2Q (see FIG. 14) of the third embodiment in the form of substrate holding. The processing unit 2R of the fourth embodiment is a combination of the opposing member 6Q and the ring member 8Q of the third embodiment and the rotation jig 5P of the second embodiment.

在第四實施形態的基板處理裝置1中能執行與第一實施形態的基板處理裝置1同樣的基板處理(參照圖6至圖7F)。從阻隔空間SS排出處理液時的樣子係與第三實施形態的說明同樣(參照圖16)。In the substrate processing apparatus 1 of the fourth embodiment, the same substrate processing as the substrate processing apparatus 1 of the first embodiment can be performed (see FIGS. 6 to 7F). The state when the treatment liquid is discharged from the barrier space SS is the same as the description of the third embodiment (refer to FIG. 16).

在第四實施形態的基板處理裝置1所為的基板處理中，藉由從下表面噴嘴14噴出清洗液或者置換液從而保護基板W的下表面(下表面保護工序、保護液供給工序)。在此情形中，下表面噴嘴14係作為保護液供給單元發揮作用。In the substrate processing performed by the substrate processing apparatus 1 of the fourth embodiment, the lower surface of the substrate W is protected by spraying the cleaning liquid or the replacement liquid from the lower surface nozzle 14 (lower surface protection step, protection liquid supply step). In this case, the lower surface nozzle 14 functions as a protection liquid supply unit.

此外，亦可朝基板W的下表面噴吹惰性氣體，藉此藉由惰性氣體置換基板W的下表面與自轉基座21之間的空間中的氛圍。在此情形中，能更抑制氧朝阻隔空間SS流入。In addition, an inert gas may also be sprayed toward the lower surface of the substrate W, thereby replacing the atmosphere in the space between the lower surface of the substrate W and the rotation base 21 by the inert gas. In this case, the inflow of oxygen into the blocking space SS can be more suppressed.

依據第四實施形態，達成與第一實施形態同樣的功效。此外，與第三實施形態同樣地，在第四實施形態中可執行圖17所示的基板處理的其他例子。According to the fourth embodiment, the same effect as the first embodiment is achieved. In addition, similarly to the third embodiment, another example of the substrate processing shown in FIG. 17 can be performed in the fourth embodiment.

[第五實施形態][Fifth Embodiment]

圖19係顯示本發明的第五實施形態的基板處理裝置所具備的處理單元的概略構成之示意性的局部剖視圖。在圖19中，針對與上面所說明的圖1至圖18所示的構成同等的構成附上與圖1等相同的元件符號並省略說明。19 is a schematic partial cross-sectional view showing the schematic configuration of a processing unit included in a substrate processing apparatus according to a fifth embodiment of the present invention. In FIG. 19, the same reference numerals as those in FIG. 1 and the like are attached to the configurations equivalent to the configurations shown in FIGS. 1 to 18 described above, and the description is omitted.

第五實施形態的處理單元2S與第四實施形態的處理單元2R(參照圖18)的差異在於對向構件6Q以及環狀構件8Q的升降以及旋轉的結構。第五實施形態的處理單元2S的對向構件6Q以及環狀構件8Q係藉由支撐構件升降單元131而升降，且藉由自轉馬達23而旋轉。支撐構件升降單元131為用以使支撐構件130升降之單元，支撐構件130係用以垂吊地支撐對向構件6Q。The difference between the processing unit 2S of the fifth embodiment and the processing unit 2R of the fourth embodiment (refer to FIG. 18) lies in the lifting and rotating structures of the facing member 6Q and the ring member 8Q. The opposing member 6Q and the ring member 8Q of the processing unit 2S of the fifth embodiment are raised and lowered by the support member raising and lowering unit 131 and are rotated by the rotation motor 23. The supporting member lifting unit 131 is a unit for lifting the supporting member 130, and the supporting member 130 is used to suspend the opposing member 6Q.

以下詳細地說明第五實施形態的處理單元2S與第四實施形態的處理單元2R不同的點。The following describes in detail the differences between the processing unit 2S of the fifth embodiment and the processing unit 2R of the fourth embodiment.

第五實施形態的對向構件6Q係進一步包含複數個凸緣部63，複數個凸緣部63係從中空軸60的上端水平地延伸。對向構件6Q係例如可藉由磁力與自轉基座21嵌合。詳細而言，設置於環狀構件8Q的複數個第一嵌合部135與設置於自轉基座21的複數個第二嵌合部136係藉由磁力相互吸引且凹凸嵌合。The facing member 6Q of the fifth embodiment further includes a plurality of flange portions 63, and the plurality of flange portions 63 extend horizontally from the upper end of the hollow shaft 60. The opposing member 6Q can be fitted with the rotation base 21 by magnetic force, for example. In detail, the plurality of first fitting portions 135 provided on the ring member 8Q and the plurality of second fitting portions 136 provided on the rotation base 21 are attracted to each other by a magnetic force and are engaged with each other in a concave and convex manner.

複數個第一嵌合部135係從環狀構件8Q的下表面朝下方延伸。複數個第一嵌合部135係彼此隔著間隔配置於繞著旋轉軸線A1的周方向(旋轉方向R)。複數個第二嵌合部136係於繞著旋轉軸線A1的周方向(旋轉方向R)彼此隔著間隔且在比複數個夾具銷20還更徑方向外側方向處配置於自轉基座21的上表面。The plurality of first fitting portions 135 extend downward from the lower surface of the ring member 8Q. The plurality of first fitting portions 135 are arranged in the circumferential direction (rotation direction R) around the rotation axis A1 with an interval therebetween. The plurality of second fitting portions 136 are arranged on the rotation base 21 at a distance from each other in the circumferential direction (rotation direction R) around the rotation axis A1 and in a radially outer direction than the plurality of clamp pins 20 surface.

在環狀構件8Q的各個第一嵌合部135與自轉基座21中之對應的第二嵌合部136嵌合時，對向構件6Q以及環狀構件8Q係可與自轉基座21一體旋轉。自轉馬達23亦作為對向構件旋轉單元發揮作用，用以使對向構件6Q以及環狀構件8Q繞著旋轉軸線A1旋轉。在對向構件6Q位於阻隔空間區劃位置時，環狀構件8Q係與自轉基座21嵌合(參照圖19的二點鏈線)。When each first fitting portion 135 of the ring member 8Q is fitted with the corresponding second fitting portion 136 in the rotation base 21, the opposing member 6Q and the ring member 8Q can rotate integrally with the rotation base 21 . The autorotation motor 23 also functions as an opposing member rotating unit for rotating the opposing member 6Q and the annular member 8Q around the rotation axis A1. When the facing member 6Q is located at the blocking space division position, the ring member 8Q is fitted with the rotation base 21 (refer to the two-dot chain line in FIG. 19).

支撐構件130係包含：對向構件支撐部132，係支撐對向構件6Q；噴嘴支撐部133，係設置於比對向構件支撐部132還更上方，用以支撐中央噴嘴11的殼體30；以及壁部134，係連結對向構件支撐部132以及噴嘴支撐部133並朝鉛直方向延伸。The supporting member 130 includes: an opposing member support portion 132 for supporting the opposing member 6Q; a nozzle support portion 133, which is arranged above the opposing member support portion 132, and is used to support the housing 30 of the central nozzle 11; And the wall portion 134 connects the opposing member support portion 132 and the nozzle support portion 133 and extends in the vertical direction.

對向構件支撐部132係從下方支撐對向構件6Q(的凸緣部63)。於對向構件支撐部132的中央部形成有筒狀部插通孔132a，筒狀部插通孔132a係供中空軸60插通。The opposing member support portion 132 supports (the flange portion 63 of the opposing member 6Q) from below. A cylindrical portion insertion hole 132a is formed in the central portion of the opposing member support portion 132, and the cylindrical portion insertion hole 132a is for the hollow shaft 60 to pass through.

於各個凸緣部63形成有定位孔63a，定位孔63a係於上下方向貫通凸緣部63。於對向構件支撐部132形成有嵌合突起132b，嵌合突起132b係可嵌合至對應的凸緣部63的定位孔63a。各個定位孔63a係被對應的嵌合突起132b嵌合，藉此對向構件6Q以及環狀構件8Q係在旋轉方向R中相對於支撐構件130被定位。A positioning hole 63a is formed in each flange portion 63, and the positioning hole 63a penetrates the flange portion 63 in the vertical direction. A fitting protrusion 132b is formed on the opposing member support portion 132, and the fitting protrusion 132b can be fitted into the positioning hole 63a of the corresponding flange portion 63. Each positioning hole 63a is fitted by the corresponding fitting protrusion 132b, whereby the facing member 6Q and the ring member 8Q are positioned relative to the support member 130 in the rotation direction R.

支撐構件升降單元131係例如包含：滾珠螺桿機構(未圖示)，係使支撐構件130升降；以及電動馬達(未圖示)，係對滾珠螺桿機構賦予驅動力。支撐構件升降單元131係被控制器3控制(參照圖5的二點鏈線)。The support member raising and lowering unit 131 includes, for example, a ball screw mechanism (not shown) that raises and lowers the support member 130, and an electric motor (not shown) that applies driving force to the ball screw mechanism. The supporting member lifting unit 131 is controlled by the controller 3 (refer to the two-dot chain line in FIG. 5).

支撐構件升降單元131係能使支撐構件130位於上位置(圖19中以實線所示的位置)至下位置(圖19中以二點鏈線所示的位置)之間的預定的高度位置。下位置為在支撐構件130的可動範圍中支撐構件130最接近自轉基座21的上表面之位置。上位置為在支撐構件130的可動範圍中支撐構件130最遠離自轉基座21的上表面之位置。The supporting member lifting unit 131 is capable of positioning the supporting member 130 at a predetermined height position between the upper position (the position shown by the solid line in FIG. 19) to the lower position (the position shown by the two-dot chain line in FIG. 19) . The lower position is the position where the support member 130 is closest to the upper surface of the rotation base 21 in the movable range of the support member 130. The upper position is the position where the support member 130 is farthest away from the upper surface of the rotation base 21 in the movable range of the support member 130.

支撐構件130係在位於上位置時垂吊支撐對向構件6Q。支撐構件130係藉由支撐構件升降單元131而升降，並通過上位置與下位置之間的嵌合位置。When the supporting member 130 is in the upper position, the opposing member 6Q is suspended and supported. The supporting member 130 is raised and lowered by the supporting member lifting unit 131 and passes through the fitting position between the upper position and the lower position.

支撐構件130係與對向構件6Q以及環狀構件8Q一起從上位置下降至嵌合位置。當支撐構件130到達至嵌合位置時，將對向構件6Q以及環狀構件8Q傳遞至自轉基座21。當支撐構件130到達至比嵌合位置還更下方時則從對向構件6Q離開。The supporting member 130 is lowered from the upper position to the fitting position together with the opposing member 6Q and the ring member 8Q. When the support member 130 reaches the fitting position, the opposed member 6Q and the ring member 8Q are transferred to the rotation base 21. When the support member 130 reaches below the fitting position, it will move away from the opposing member 6Q.

當支撐構件130從下位置上升並到達至嵌合位置時，從自轉基座21接取對向構件6Q以及環狀構件8Q。支撐構件130係與對向構件6Q以及環狀構件8Q一起從嵌合位置上升至上位置。When the support member 130 rises from the lower position and reaches the fitting position, the opposing member 6Q and the ring member 8Q are picked up from the rotation base 21. The supporting member 130 is raised from the fitting position to the upper position together with the opposing member 6Q and the ring member 8Q.

如此，支撐構件130係藉由支撐構件升降單元131而升降，藉此對向構件6Q以及環狀構件8Q係相對於自轉基座21升降。因此，支撐構件升降單元131係作為對向構件升降單元發揮作用。In this way, the support member 130 is raised and lowered by the support member raising and lowering unit 131, whereby the facing member 6Q and the ring member 8Q are raised and lowered with respect to the rotation base 21. Therefore, the supporting member elevating unit 131 functions as a facing member elevating unit.

在第五實施形態的基板處理裝置1中能執行與第四實施形態的基板處理裝置1同樣的基板處理。然而，在第五實施形態的基板處理中，在支撐構件130位於下位置(圖19中以二點鏈線所示的位置)的狀態下執行氛圍置換工序(步驟S3)至旋乾工序(步驟S8)。因此，能在對基板W的上表面以及下表面供給處理液時使對向構件6Q以及環狀構件8Q確實地與基板W同步旋轉。In the substrate processing apparatus 1 of the fifth embodiment, the same substrate processing as the substrate processing apparatus 1 of the fourth embodiment can be performed. However, in the substrate processing of the fifth embodiment, the atmosphere replacement step (step S3) to the spin-drying step (step S3) are performed in a state where the support member 130 is located at the lower position (the position shown by the two-dot chain line in FIG. 19). S8). Therefore, when the processing liquid is supplied to the upper surface and the lower surface of the substrate W, the counter member 6Q and the ring member 8Q can be reliably rotated in synchronization with the substrate W.

依據第五實施形態的構成，達成與第一實施形態同樣的功效。According to the configuration of the fifth embodiment, the same effect as the first embodiment is achieved.

[其他實施形態][Other embodiments]

本發明並未限定於以上所說明的實施形態，亦可進一步以其他的形態來實施。The present invention is not limited to the embodiments described above, and may be implemented in other forms.

例如，與上面所說明的各個實施形態不同，能應用於將聚合物(polymer)層形成液作為處理液之基板處理，聚合物層形成液係用以於基板W的上表面形成聚合物層。作為聚合物層形成液，例如能例舉用以將基板W的表面予以疏水化之疏水化劑。聚合物層形成液為用以與形成於基板W的表面之圖案的表面的SiO2 膜反應並形成犧牲層之液體。For example, unlike the various embodiments described above, it can be applied to substrate processing in which a polymer layer forming liquid is used as a processing liquid. The polymer layer forming liquid is used to form a polymer layer on the upper surface of the substrate W. As the polymer layer forming liquid, for example, a hydrophobizing agent for hydrophobizing the surface of the substrate W can be exemplified. The polymer layer forming liquid is a liquid used to react with the SiO 2 film formed on the surface of the patterned surface of the substrate W to form a sacrificial layer.

作為疏水化劑，例如能使用矽系的疏水化劑或者金屬系的疏水化劑，矽系的疏水化劑係使矽本身以及含有矽之化合物疏水化，金屬系的疏水化劑係使金屬本身以及含有金屬之化合物疏水化。As the hydrophobizing agent, for example, a silicon-based hydrophobizing agent or a metal-based hydrophobizing agent can be used. The silicon-based hydrophobizing agent hydrophobizes silicon itself and silicon-containing compounds, and the metal-based hydrophobizing agent makes the metal itself And the hydrophobization of metal-containing compounds.

金屬系的疏水化劑係例如包含有機矽化合物以及具有疏水基之胺的至少一者。矽系的疏水化劑係例如為矽烷耦合劑(silane coupling agent)。矽烷耦合劑係例如包含HMDS(hexamethyldisilazane；六甲基二矽氮烷)、TMS(tetramethylsilane；四甲基矽烷)、氟化烷氯矽烷(fluorinated alkylchlorosilane)、烷基二矽氮烷(alkyl disilazane)以及無氯(non chlorine)系的疏水化劑的至少一者。無氯系的疏水化劑係例如包含二甲基甲矽烷基二甲胺(dimethylsilyldimethylamine)、二甲基甲矽烷基二乙胺(dimethylsilyldiethylamine)、六甲基二矽氮烷(HMDS)、四甲基二矽氮烷(tetramethyldisilazane)、雙(二甲基氨)二甲基矽烷(Bis(dimethylamino)dimethylsilane)、N,N-二甲基三甲基矽胺(N, N- dimethylamino trimethylsilane)、N-(三甲基矽基)二甲胺(N-(trimethylsilyl)dimethylamine)以及有機矽烷(organosilane)化合物的至少一者。The metal-based hydrophobizing agent includes, for example, at least one of an organosilicon compound and an amine having a hydrophobic group. The silicon-based hydrophobizing agent is, for example, a silane coupling agent. Silane coupling agents include, for example, HMDS (hexamethyldisilazane; hexamethyldisilazane), TMS (tetramethylsilane; tetramethylsilane), fluorinated alkylchlorosilane, alkyl disilazane, and At least one of non-chlorine-based hydrophobizing agents. Non-chlorine-based hydrophobizing agents include, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane (HMDS), and tetramethylsilyldimethylamine. Tetramethyldisilazane, Bis(dimethylamino)dimethylsilane, N, N- dimethylamino trimethylsilane, N- (Trimethylsilyl) dimethylamine (N-(trimethylsilyl)dimethylamine) and at least one of organosilane compounds.

由於聚合物層形成液較昂貴，因此希望減少消耗量。如上面所說明的實施形態般，於基板W的上表面形成聚合物層形成液的蓄液101並處理基板W的上表面之手法為有效之手法。Since the polymer layer forming liquid is expensive, it is desired to reduce the consumption. As in the embodiment described above, the method of forming the reservoir 101 of the polymer layer forming liquid on the upper surface of the substrate W and treating the upper surface of the substrate W is an effective method.

此外，在第一實施形態以及第二實施形態中，連結部81係具有以隨著朝向徑方向外側方向而朝向下方之方式傾斜之傾斜下表面81a。然而，連結部81亦可不具有以隨著朝向徑方向外側方向而朝向下方之方式傾斜之傾斜下表面81a，而是如圖3中以二點鏈線所示具有與對向面6a齊平的下表面。在此情形中，導引面85上的處理液係在流入至處理液排出路徑10之前碰撞至對向構件6的延伸設置部66的寬幅部80的徑方向內側方向端面80b，因此會於導引面85上的處理液中產生逆流。In addition, in the first embodiment and the second embodiment, the connecting portion 81 has an inclined lower surface 81a that is inclined downward as it goes toward the radially outer direction. However, the connecting portion 81 may not have an inclined lower surface 81a that is inclined downward as it goes to the radially outer direction, but has a two-dot chain line as shown in FIG. 3, which is flush with the facing surface 6a. lower surface. In this case, the processing liquid on the guide surface 85 hits the radially inner end surface 80b of the wide portion 80 of the extended portion 66 of the opposing member 6 before flowing into the processing liquid discharge path 10, so A countercurrent is generated in the treatment liquid on the guide surface 85.

此外，上面所說明的實施形態的連結構件9為朝鉛直方向延伸的圓柱狀。與上面所說明的實施形態不同，如圖20所示，各個連結構件9亦可以俯視觀看時隨著朝向徑方向外側方向而朝向基板W的旋轉方向R的下游側RD之方式形成。In addition, the connecting member 9 of the embodiment described above has a cylindrical shape extending in the vertical direction. Unlike the embodiment described above, as shown in FIG. 20, each connecting member 9 may be formed so as to face the downstream side RD of the rotation direction R of the substrate W as it goes toward the radially outer direction in a plan view.

在基板W正在旋轉之情形中，容易在阻隔空間SS中產生隨著朝向徑方向外側方向而朝向旋轉方向R的下游側RD之氣流F(參照圖9)。只要連結構件9以俯視觀看時隨著朝向徑方向外側方向而朝向基板W的旋轉方向R的下游側RD之方式形成，則能促使產生隨著朝向徑方向外側方向而朝向旋轉方向R的下游側RD之氣流。因此，能更抑制氣流的吝亂。When the substrate W is rotating, it is easy to generate an air flow F toward the downstream side RD of the rotation direction R as it goes to the radially outer direction in the blocking space SS (refer to FIG. 9). As long as the connecting member 9 is formed so as to face the downstream side RD of the rotation direction R of the substrate W as it goes toward the radially outer direction in a plan view, it can promote generation toward the downstream side RD of the rotation direction R as it goes toward the radially outer direction. The airflow of RD. Therefore, the stinginess of the airflow can be more suppressed.

此外，在上面所說明的實施形態中，雖然連結構件9設置於處理液排出路徑10內，然而連結構件9亦可設置於阻隔空間SS內；雖然未圖示，在連結構件9設置於阻隔空間SS內之情形中，連結構件9係連結於導引面85與傾斜下表面81a。In addition, in the embodiment described above, although the connecting member 9 is provided in the processing liquid discharge path 10, the connecting member 9 may also be provided in the blocking space SS; although not shown, the connecting member 9 is provided in the blocking space In the case of the SS, the connecting member 9 is connected to the guide surface 85 and the inclined lower surface 81a.

雖然已詳細地說明本發明的實施形態，但這些實施形態僅為用以明瞭本發明的技術性內容之具體例，本發明不應被這些具體例限定地解釋，本發明的範圍僅被隨附的申請專利範圍所限定。Although the embodiments of the present invention have been described in detail, these embodiments are only specific examples for clarifying the technical content of the present invention, and the present invention should not be limitedly interpreted by these specific examples. The scope of the present invention is merely enclosed. The scope of patent application is limited.

本發明係與2019年7月19日於日本特許廳所提出的日本特願2019-133864號對應，日本特願2019-133864號的全部內容皆被引用並記載於本發明。The present invention corresponds to Japanese Patent Application No. 2019-133864 filed by the Japan Patent Office on July 19, 2019, and the entire contents of Japanese Patent Application No. 2019-133864 are cited and described in the present invention.

1:基板處理裝置 2,2P,2Q,2R,2S:處理單元 3:控制器 3A:處理器 3B:記憶體 4:腔室 5,5P:自轉夾具 6,6Q:對向構件 6a:對向面 6b:連通孔 6c,8c:交界 7:處理罩 8,8Q:環狀構件 8a:凹部 9:連結構件 10,10Q:處理液排出路徑 10a,10Qa:流入口 10b,10Qb:排出口 11:中央噴嘴 11a,14a:噴出口 12:第一下表面噴嘴 13:第二下表面噴嘴 14:下表面噴嘴 20:夾具銷 21:自轉基座 21a:貫通孔 22:旋轉軸 23:自轉馬達 24:吸引口 25:吸引路徑 26:吸引管 27:吸引單元 28:吸引閥 30:殼體 31:第一管部 32:第二管部 33:第三管部 34:第四管部 40:藥液配管 41:上側清洗液配管 42:上側置換液配管 43:惰性氣體配管 44,47:下側清洗液配管 45,48:下側置換液配管 46:共通配管 49:惰性氣體配管 50:藥液閥 51:上側清洗液閥 52:上側置換液閥 53:惰性氣體閥 54,57:下側清洗液閥 55,58:下側置換液閥 59:惰性氣體閥 60:中空軸 61:對向構件升降單元 62:對向構件旋轉單元 63:凸緣部 63a:定位孔 65:圓板部 66,66Q:延伸設置部 71:防護罩 71A:第一防護罩 71B:第二防護罩 72:罩 72A:第一罩 72B:第二罩 74:防護罩升降單元 75A:第一圓筒部 75B:第二圓筒部 76A:第一圓環部 76a,76b:徑方向內側方向端 76B:第二圓環部 80,110:寬幅部 80a,110b:平坦下表面 80b:徑方向內側方向端面 81,111:連結部 81a,111a:傾斜下表面 84:內側方向端面 85:導引面 86:排出路徑區劃面 86A:傾斜區劃面 86B:鉛直區劃面 86Q:排出路徑區劃面 87:下側傾斜面 88:下側平坦面 90:下側氣體流路 100: 覆液 101:蓄液 110a:鉛直圓筒面 120:傾斜排出路徑 121:鉛直排出路徑 130:支撐構件 131:支撐構件升降單元 132:對向構件支撐部 132a:筒狀部插通孔 132b:嵌合突起 133:噴嘴支撐部 134:壁部 135:第一嵌合部 136:第二嵌合部 A1:旋轉軸線 C:承載器 CR,IR:搬運機器人 D1:阻隔空間寬度 D2:間隙寬度 D3:排出路徑寬度 F:氣流 G:間隙 LP:裝載埠 OS:外部空間 R:旋轉方向 RD:下游測 SS:阻隔空間 W:基板1: Substrate processing equipment 2, 2P, 2Q, 2R, 2S: processing unit 3: Controller 3A: Processor 3B: Memory 4: chamber 5,5P: Rotating fixture 6,6Q: Opposite member 6a: Opposite side 6b: Connecting hole 6c, 8c: junction 7: Treatment hood 8,8Q: Ring member 8a: recess 9: Connecting components 10,10Q: Treatment liquid discharge path 10a, 10Qa: Inlet 10b, 10Qb: discharge outlet 11: Central nozzle 11a, 14a: spout 12: Nozzle on the first lower surface 13: The second lower surface nozzle 14: Nozzle on the lower surface 20: Fixture pin 21: Rotation base 21a: Through hole 22: Rotation axis 23: Rotating motor 24: suction mouth 25: Attraction path 26: Suction tube 27: Attraction unit 28: Suction valve 30: shell 31: The first pipe department 32: The second pipe 33: The third pipe department 34: The fourth pipe department 40: Chemical piping 41: Upper cleaning fluid piping 42: Upper replacement fluid piping 43: Inert gas piping 44, 47: Lower side cleaning fluid piping 45, 48: Lower replacement fluid piping 46: Common piping 49: Inert gas piping 50: Liquid valve 51: Upper cleaning fluid valve 52: Upper displacement fluid valve 53: Inert gas valve 54,57: Lower side cleaning fluid valve 55, 58: Lower side displacement fluid valve 59: Inert gas valve 60: Hollow shaft 61: Opposite member lifting unit 62: Opposite member rotation unit 63: Flange 63a: positioning hole 65: Disc section 66, 66Q: Extension setting part 71: Protective cover 71A: The first protective cover 71B: second protective cover 72: Hood 72A: The first cover 72B: second cover 74: Protective cover lifting unit 75A: The first cylinder 75B: The second cylindrical part 76A: The first ring part 76a, 76b: radial inner direction end 76B: The second ring part 80,110: Wide part 80a, 110b: flat bottom surface 80b: End face in radial direction inner direction 81,111: connecting part 81a, 111a: Inclined lower surface 84: End face in inner direction 85: guide surface 86: Discharge path zoning surface 86A: Oblique area 86B: Vertical zoning 86Q: Discharge path zoning 87: Lower side slope 88: Flat surface on the lower side 90: Lower gas flow path 100: Overlay 101: reservoir 110a: Vertical cylindrical surface 120: Inclined discharge path 121: Vertical discharge path 130: support member 131: Support member lifting unit 132: Opposing member support part 132a: Cylindrical part insertion hole 132b: Mating protrusion 133: Nozzle support 134: Wall 135: The first fitting part 136: The second fitting part A1: Rotation axis C: Carrier CR, IR: handling robot D1: Width of barrier space D2: gap width D3: width of discharge path F: Airflow G: gap LP: load port OS: External space R: Rotation direction RD: Downstream test SS: barrier space W: substrate

[圖1]係顯示本發明的第一實施形態的基板處理裝置的佈局(layout)之示意性的俯視圖。 [圖2]係顯示前述基板處理裝置所具備的處理單元的概略構成之局部剖視圖。 [圖3]係前述處理單元所具備的對向構件的延伸設置部的周邊的剖視圖。 [圖4]係沿著圖2所示的Ⅳ－Ⅳ線之剖視圖。 [圖5]係顯示前述基板處理裝置的主要部分的電性構成之方塊圖。 [圖6]係用以說明前述基板處理裝置所為的基板處理的一例之流程圖。 [圖7A]係用以說明前述基板處理的樣子之示意圖。 [圖7B]係用以說明前述基板處理的樣子之示意圖。 [圖7C]係用以說明前述基板處理的樣子之示意圖。 [圖7D]係用以說明前述處理處理的樣子之示意圖。 [圖7E] 係用以說明前述處理處理的樣子之示意圖。 [圖7F] 係用以說明前述處理處理的樣子之示意圖。 [圖8]係用以說明前述基板處理中的環狀構件附近的處理液的樣子之示意圖。 [圖9]係用以說明在前述基板處理中防護罩接住處理液的樣子之示意圖。 [圖10A]係用以說明前述基板處理裝置所為的基板處理的其他例子之示意圖。 [圖10B]係用以說明前述基板處理裝置所為的基板處理的其他例子之示意圖。 [圖11A]係用以說明前述基板處理裝置的變化例之示意圖。 [圖11B] 係用以說明前述基板處理裝置的變化例之示意圖。 [圖12]係顯示本發明的第二實施形態的基板處理裝置所具備的處理單元的概略構成之示意性的局部剖視圖。 [圖13]係從上方觀看第二實施形態的處理單元所具備的環狀構件的周邊之圖。 [圖14]係顯示本發明的第三實施形態的基板處理裝置所具備的處理單元的概略構成之示意性的局部剖視圖。 [圖15]係第三實施形態的處理單元所具備的對向構件以及環狀構件的周邊的剖視圖。 [圖16]係用以說明使用了第三實施形態的基板處理裝置的基板處理之示意圖。 [圖17]係用以說明使用了第三實施形態的基板處理裝置的基板處理的其他例子之示意圖。 [圖18]係顯示本發明的第四實施形態的基板處理裝置所具備的處理單元的概略構成之示意性的局部剖視圖。 [圖19]係顯示本發明的第五實施形態的基板處理裝置所具備的處理單元的概略構成之示意性的局部剖視圖。 [圖20]係用以說明連結於前述環狀構件之連結構件的變化例之示意圖。Fig. 1 is a schematic plan view showing the layout of the substrate processing apparatus according to the first embodiment of the present invention. [FIG. 2] A partial cross-sectional view showing the schematic configuration of a processing unit included in the substrate processing apparatus. [Fig. 3] is a cross-sectional view of the periphery of the extended portion of the opposed member included in the aforementioned processing unit. [Figure 4] is a cross-sectional view taken along the line IV-IV shown in Figure 2. [Fig. 5] is a block diagram showing the electrical configuration of the main part of the aforementioned substrate processing apparatus. Fig. 6 is a flowchart for explaining an example of substrate processing performed by the aforementioned substrate processing apparatus. [Fig. 7A] is a schematic diagram for explaining the state of the aforementioned substrate processing. [Fig. 7B] is a schematic diagram for explaining the state of the aforementioned substrate processing. [Fig. 7C] is a schematic diagram for explaining the state of the aforementioned substrate processing. [Fig. 7D] is a schematic diagram for explaining the state of the aforementioned processing. [Fig. 7E] is a schematic diagram for explaining the state of the aforementioned processing. [Fig. 7F] is a schematic diagram for explaining the state of the aforementioned processing. Fig. 8 is a schematic diagram for explaining the state of the processing liquid in the vicinity of the ring-shaped member in the aforementioned substrate processing. Fig. 9 is a schematic diagram for explaining how the protective cover catches the processing liquid during the aforementioned substrate processing. [FIG. 10A] is a schematic diagram for explaining another example of substrate processing performed by the aforementioned substrate processing apparatus. [FIG. 10B] is a schematic diagram for explaining another example of substrate processing performed by the aforementioned substrate processing apparatus. [FIG. 11A] is a schematic diagram for explaining a modified example of the aforementioned substrate processing apparatus. [FIG. 11B] A schematic diagram for explaining a modification of the aforementioned substrate processing apparatus. Fig. 12 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit included in a substrate processing apparatus according to a second embodiment of the present invention. Fig. 13 is a view of the periphery of a ring-shaped member included in the processing unit of the second embodiment viewed from above. Fig. 14 is a schematic partial cross-sectional view showing the schematic configuration of a processing unit included in a substrate processing apparatus according to a third embodiment of the present invention. Fig. 15 is a cross-sectional view of the periphery of the opposed member and the ring member included in the processing unit of the third embodiment. Fig. 16 is a schematic diagram for explaining substrate processing using the substrate processing apparatus of the third embodiment. Fig. 17 is a schematic diagram for explaining another example of substrate processing using the substrate processing apparatus of the third embodiment. Fig. 18 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit included in a substrate processing apparatus according to a fourth embodiment of the present invention. Fig. 19 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit included in a substrate processing apparatus according to a fifth embodiment of the present invention. [Fig. 20] is a schematic diagram for explaining a modification example of the connection member connected to the aforementioned ring member.

2:處理單元 2: processing unit

6:對向構件 6: Opposite member

6a:對向面 6a: Opposite side

8:環狀構件 8: Ring member

10:處理液排出路徑 10: Treatment liquid discharge path

10a:流入口 10a: Inlet

10b:排出口 10b: Outlet

65:圓板部 65: Disc section

66:延伸設置部 66: Extension

80:寬幅部 80: Wide part

80a:平坦下表面 80a: flat bottom surface

81:連結部 81: Connection

81a:傾斜下表面 81a: Inclined lower surface

85:導引面 85: guide surface

86:排出路徑區劃面 86: Discharge path zoning surface

87:下側傾斜面 87: Lower side slope

88:下側平坦面 88: Flat surface on the lower side

100:覆液 100: Cover liquid

G:間隙 G: gap

OS:外部空間 OS: External space

SS:阻隔空間 SS: barrier space

W:基板 W: substrate

Claims (19)

一種基板處理裝置，係包含： 基板保持單元，係水平地保持基板； 基板旋轉單元，係使前述基板保持單元繞著通過被前述基板保持單元保持之前述基板的中央部之鉛直軸線旋轉； 處理液供給單元，係朝被前述基板保持部保持之前述基板的上表面供給處理液； 惰性氣體供給單元，係朝被前述基板保持單元保持之前述基板的上表面供給惰性氣體； 對向構件，係包含：圓板部，係具有對向面，前述對向面係從上方與被前述基板保持單元保持之前述基板對向；以及延伸設置部，係從前述圓板部朝以前述鉛直軸線作為中心之徑方向的外側方向延伸； 環狀構件，係俯視觀看時圍繞被前述基板保持單元保持之前述基板；以及 對向構件升降單元，係使前述對向構件與前述環狀構件一起升降，從而藉由被前述基板保持單元保持之前述基板、前述對向構件以及前述環狀構件區劃阻隔空間，前述阻隔空間係限制了來自外部的氛圍的流入； 前述環狀構件係具有導引面，前述導引面係在前述基板旋轉單元使被前述基板保持單元保持之前述基板旋轉時藉由離心力將存在於前述基板的上表面的處理液導引至比前述基板的周緣部還更前述徑方向的外側方向； 藉由前述延伸設置部以及前述環狀構件區劃處理液排出路徑，前述處理液排出路徑係將存在於前述導引面的處理液朝前述阻隔空間外排出。A substrate processing device includes: The substrate holding unit is to hold the substrate horizontally; A substrate rotating unit that rotates the substrate holding unit around a vertical axis passing through the center of the substrate held by the substrate holding unit; The processing liquid supply unit supplies the processing liquid toward the upper surface of the substrate held by the substrate holding portion; The inert gas supply unit supplies inert gas toward the upper surface of the substrate held by the substrate holding unit; The opposing member includes: a disc portion having an opposing surface, and the opposing surface opposes the substrate held by the substrate holding unit from above; and an extension portion that faces from the disc portion The aforementioned vertical axis extends in the outer direction of the radial direction of the center; A ring-shaped member that surrounds the substrate held by the substrate holding unit when viewed from above; and The facing member raising and lowering unit raises and lowers the facing member together with the annular member, thereby partitioning the blocking space by the substrate, the facing member, and the annular member held by the substrate holding unit, and the blocking space is Limit the inflow of atmosphere from the outside; The ring-shaped member has a guide surface, and the guide surface guides the processing liquid on the upper surface of the substrate by centrifugal force when the substrate rotating unit rotates the substrate held by the substrate holding unit. The peripheral edge portion of the aforementioned substrate is further in the outer direction of the aforementioned radial direction; The processing liquid discharge path is partitioned by the extension portion and the annular member, and the processing liquid discharge path discharges the processing liquid existing on the guide surface to the outside of the blocking space. 如請求項1所記載之基板處理裝置，其中前述處理液排出路徑的寬度係比鉛直方向中的前述阻隔空間的寬度還小。The substrate processing apparatus according to claim 1, wherein the width of the processing liquid discharge path is smaller than the width of the blocking space in the vertical direction. 如請求項1或2所記載之基板處理裝置，其中前述環狀構件係具有：排出路徑區劃面，係連結於前述徑方向中的前述導引面的外側方向端，並區劃前述處理液排出路徑； 前述處理液排出路徑係於前述導引面與前述排出路徑區劃面之間的交界具有流入口。The substrate processing apparatus according to claim 1 or 2, wherein the ring-shaped member has: a discharge path partition surface connected to the outer direction end of the guide surface in the radial direction, and partitions the processing liquid discharge path ； The processing liquid discharge path has an inflow port at the boundary between the guide surface and the partition surface of the discharge path. 如請求項3所記載之基板處理裝置，其中前述排出路徑區劃面以及前述導引面係構成於水平方向平坦的單一個平坦面。The substrate processing apparatus according to claim 3, wherein the discharge path division surface and the guide surface are formed on a single flat surface that is flat in the horizontal direction. 如請求項1或2所記載之基板處理裝置，其中進一步包含：對向構件旋轉單元，係使前述對向構件與前述環狀構件一起繞著前述鉛直軸線與被前述基板保持單元保持之前述基板同步旋轉。The substrate processing apparatus according to claim 1 or 2, further comprising: an opposing member rotating unit that makes the opposing member and the ring-shaped member move around the vertical axis and the substrate held by the substrate holding unit Synchronous rotation. 如請求項5所記載之基板處理裝置，其中進一步包含：複數個連結構件，係連結前述環狀構件與前述對向構件； 各個前述連結構件係以下述方式形成：俯視觀看時，隨著朝向前述徑方向的外側方向而朝向被前述基板保持單元保持之前述基板的旋轉方向的下流側。The substrate processing apparatus according to claim 5, which further comprises: a plurality of connecting members connecting the aforementioned ring-shaped member and the aforementioned opposed member; Each of the connecting members is formed in such a way that when viewed in plan, it faces the downstream side of the rotation direction of the substrate held by the substrate holding unit as it faces the outer direction of the radial direction. 如請求項1或2所記載之基板處理裝置，其中進一步包含：控制器，係控制前述基板旋轉單元、前述處理液供給單元、前述惰性氣體供給單元以及前述對向構件升降單元； 前述控制器係編程為執行： 阻隔空間區劃工序，係藉由前述對向構件升降單元使前述對向構件以及前述環狀構件移動並區劃前述阻隔空間； 氛圍置換工序，係從前述惰性氣體供給單元朝前述基板的上表面供給惰性氣體，藉此藉由惰性氣體置換前述阻隔空間內的氛圍； 處理液供給工序，係在已藉由惰性氣體置換前述阻隔空間內的氛圍的狀態下，從前述處理液供給單元對前述基板的上表面供給處理液；以及 處理液排出工序，係使前述基板旋轉單元旋轉前述基板，藉此將前述基板的上表面的處理液經由前述導引面以及前述處理液排出路徑排出至前述阻隔空間外。The substrate processing apparatus according to claim 1 or 2, further comprising: a controller that controls the substrate rotating unit, the processing liquid supply unit, the inert gas supply unit, and the opposite member lifting unit; The aforementioned controller is programmed to execute: The blocking space partitioning step is to move the facing member and the annular member by the facing member lifting unit to partition the blocking space; The atmosphere replacement step is to supply inert gas from the inert gas supply unit to the upper surface of the substrate, thereby replacing the atmosphere in the barrier space with the inert gas; The processing liquid supply step is to supply the processing liquid from the processing liquid supply unit to the upper surface of the substrate in a state where the atmosphere in the barrier space has been replaced by an inert gas; and In the processing liquid discharge step, the substrate rotating unit rotates the substrate, thereby discharging the processing liquid on the upper surface of the substrate to the outside of the blocking space via the guide surface and the processing liquid discharge path. 如請求項7所記載之基板處理裝置，其中前述導引面係具有：傾斜面，係以隨著朝向前述徑方向的外側方向而朝向上方之方式傾斜； 前述控制器係編程為執行： 蓄液形成工序，係在前述處理液供給工序中對被前述基板保持單元保持之前述基板的上表面供給處理液，藉此藉由前述傾斜面與前述基板的上表面接住處理液並形成處理液的蓄液；以及 蓄液排除工序，係在前述處理液排出工序中藉由前述基板旋轉單元使前述基板的旋轉加速並從前述基板的上表面排除前述蓄液。The substrate processing apparatus according to claim 7, wherein the guide surface has: an inclined surface that is inclined upward as it goes to the outer direction of the radial direction; The aforementioned controller is programmed to execute: The reservoir forming step is to supply the treatment liquid to the upper surface of the substrate held by the substrate holding unit in the treatment liquid supply step, whereby the inclined surface and the upper surface of the substrate receive the treatment liquid and form treatment Liquid storage; and In the process liquid discharge step, the substrate rotating unit accelerates the rotation of the substrate and removes the liquid accumulation from the upper surface of the substrate in the process liquid discharge step. 一種基板處理方法，係包含： 基板保持工序，係水平地保持俯視觀看時為圓形狀的基板； 空間區劃工序，係使具有圓板部以及延伸設置部的對向構件以及環狀構件朝上下方向移動並藉由前述對向構件、前述環狀構件以及前述基板區劃阻隔空間，前述圓板部係具有從上方與前述基板對向之對向面，前述延伸設置部係從前述圓板部朝以通過前述基板的中央部之鉛直軸線作為中心之徑方向的外側方向延伸，前述環狀構件係俯視觀看時圍繞前述基板，前述阻隔空間係限制了來自外部的氛圍的流入； 氛圍置換工序，係朝前述阻隔空間供給惰性氣體，藉此藉由惰性氣體置換前述阻隔空間內的氛圍； 處理液供給工序，係在已藉由惰性氣體置換前述阻隔空間內的氛圍的狀態下，對前述基板的上表面供給處理液；以及 處理液排出工序，係在前述基板的上表面存在處理液的狀態下使前述基板繞著前述鉛直軸線的旋轉方向旋轉，藉此將存在於前述基板的上表面的周緣部的處理液經由設置於前述環狀構件的導引面導引至被前述延伸設置部與前述環狀構件區劃的處理液排出路徑，並將處理液從前述處理液排出路徑朝前述阻隔空間外排出。A substrate processing method includes: The substrate holding process is to horizontally hold the substrate that is circular in plan view; The space division step is to move the opposed member and the annular member having the circular plate portion and the extended portion in the vertical direction, and partition the obstructing space by the opposed member, the annular member, and the substrate, and the circular plate portion is It has an opposing surface facing the substrate from above, the extension portion extends from the circular plate portion toward the outside in the radial direction centered on the vertical axis passing through the center portion of the substrate, and the ring-shaped member is in a plan view Surround the aforementioned substrate when viewing, and the aforementioned blocking space restricts the inflow of atmosphere from the outside; The atmosphere replacement step is to supply inert gas to the aforementioned blocking space, thereby replacing the atmosphere in the aforementioned blocking space with the inert gas; The processing liquid supply step is to supply the processing liquid to the upper surface of the substrate in a state where the atmosphere in the barrier space has been replaced by an inert gas; and The processing liquid discharge step is to rotate the substrate around the rotation direction of the vertical axis in the state where the processing liquid exists on the upper surface of the substrate, thereby passing the processing liquid existing on the peripheral portion of the upper surface of the substrate. The guide surface of the annular member guides the processing liquid discharge path divided by the extension portion and the annular member, and discharges the processing liquid from the processing liquid discharge path to the outside of the blocking space. 如請求項9所記載之基板處理方法，其中前述處理液排出路徑的寬度係比鉛直方向中的前述阻隔空間的寬度還小。The substrate processing method according to claim 9, wherein the width of the processing liquid discharge path is smaller than the width of the blocking space in the vertical direction. 如請求項9或10所記載之基板處理方法，其中前述環狀構件係具有：排出路徑區劃面，係連結於前述徑方向中的前述導引面的外側方向端，並區劃前述處理液排出路徑； 前述處理液排出路徑係於前述導引面與前述排出路徑區劃面之間的交界具有流入口。The substrate processing method according to claim 9 or 10, wherein the ring-shaped member has: a discharge path partition surface which is connected to the outer direction end of the guide surface in the radial direction and partitions the processing liquid discharge path ； The processing liquid discharge path has an inflow port at the boundary between the guide surface and the partition surface of the discharge path. 如請求項11所記載之基板處理方法，其中前述排出路徑區劃面以及前述導引面係構成於水平方向平坦的單一個平坦面。The substrate processing method according to claim 11, wherein the discharge path partition surface and the guide surface are formed on a single flat surface that is flat in the horizontal direction. 如請求項9或10所記載之基板處理方法，其中進一步包含：同步旋轉工序，係在前述處理液排出工序中使前述環狀構件以及前述對向構件繞著前述鉛直軸線與前述基板同步旋轉。The substrate processing method according to claim 9 or 10, further comprising: a synchronous rotation step in which the annular member and the opposing member rotate in synchronization with the substrate around the vertical axis in the processing liquid discharge step. 如請求項13所記載之基板處理方法，其中前述環狀構件與前述對向構件係藉由連結構件而連結； 前述連結構件係以下述方式形成：俯視觀看時，隨著朝向前述徑方向的外側方向而朝向前述基板的旋轉方向的下流側。The substrate processing method according to claim 13, wherein the annular member and the opposing member are connected by a connecting member; The connecting member is formed in a manner that, in a plan view, it faces the downstream side of the rotation direction of the substrate as it faces the outer direction of the radial direction. 如請求項9或10所記載之基板處理方法，其中前述導引面係具有：傾斜面，係以隨著朝向前述徑方向的外側方向而朝向上方之方式傾斜； 前述處理液供給工序係包含：蓄液形成工序，係對前述基板的上表面供給處理液，藉此藉由前述傾斜面與前述基板的上表面接住處理液並形成處理液的蓄液； 前述處理液排出工序係包含：蓄液排除工序，係使前述基板的旋轉加速並從前述基板的上表面排除前述蓄液。The substrate processing method according to claim 9 or 10, wherein the guide surface has: an inclined surface that is inclined upward as it goes to the outer direction of the radial direction; The processing liquid supply step includes: a reservoir forming step, which is to supply the processing liquid to the upper surface of the substrate, whereby the inclined surface and the upper surface of the substrate catch the processing liquid and form a reservoir of the processing liquid; The process liquid discharging step includes a liquid storage removal step of accelerating the rotation of the substrate and removing the liquid storage from the upper surface of the substrate. 如請求項9或10所記載之基板處理方法，其中前述徑方向中的前述環狀構件的內側方向端面係朝鉛直方向延伸； 前述內側方向端面的上端部係連結於前述導引面； 前述處理液供給工序係包含：蓄液形成工序，係以前述環狀構件的前述內側方向端面的前述上端部位於比前述基板的上表面還更上方之方式已使前述環狀構件移動的狀態下朝前述基板的上表面供給處理液，藉此藉由前述環狀構件的前述內側方向端面與前述基板的上表面接住處理液並形成處理液的蓄液； 前述處理液排出工序係包含：蓄液排除工序，係以前述環狀構件的前述內側方向端面的前述上端部位於與前述基板的上表面相同的高度之方式使前述環狀構件移動，藉此從前述基板的上表面排除前述蓄液。The substrate processing method according to claim 9 or 10, wherein the inner end surface of the annular member in the radial direction extends in the vertical direction; The upper end of the inner end surface is connected to the guide surface; The process liquid supply step includes: a reservoir formation step, in which the ring member is moved so that the upper end portion of the inner side end surface of the ring member is located above the upper surface of the substrate Supplying the processing liquid to the upper surface of the substrate, whereby the inner end surface of the ring member and the upper surface of the substrate catch the processing liquid and form a reservoir of the processing liquid; The process liquid discharge step includes: a liquid accumulation removal step of moving the ring member so that the upper end portion of the inner side end surface of the ring member is at the same height as the upper surface of the substrate. The upper surface of the substrate removes the liquid accumulation. 如請求項9或10所記載之基板處理方法，其中進一步包含：防護罩移動工序，係使包含第一圓筒部與第一圓環部之第一防護罩以及包含第二圓筒部與第二圓環部之第二防護罩個別地上下動作，前述第一圓筒部係俯視觀看時圍繞前述對向構件以及前述環狀構件，前述第一圓環部係從前述第一圓筒部朝前述徑方向的內側方向延伸，前述第二圓筒部係俯視觀看時圍繞前述對向構件以及前述環狀構件，前述第二圓環部係從前述第二圓筒部朝前述徑方向的內側方向延伸並從下方與前述第一圓環部對向； 前述處理液排出路徑係具有：排出口，係朝前述徑方向的外側方向排出處理液； 前述防護罩移動工序係包含下述工序：在從前述排出口排出處理液時，在鉛直方向中以前述處理液排出路徑位於前述徑方向中的前述第一圓環部的內側方向端與前述徑方向中的前述第二圓環部的內側方向端之間之方式使前述第一防護罩以及前述第二防護罩移動。The substrate processing method according to claim 9 or 10, further comprising: a protective cover moving step of making a first protective cover including a first cylindrical portion and a first annular portion and a second cylindrical portion and a first protective cover The second shields of the two ring portions move up and down individually. The first cylindrical portion surrounds the opposing member and the ring member when viewed from above, and the first ring portion faces from the first cylindrical portion. The second cylindrical portion surrounds the opposing member and the annular member in a plan view, and the second annular portion extends from the second cylindrical portion toward the inner side of the radial direction. Extend and oppose the aforementioned first ring portion from below; The aforementioned treatment liquid discharge path has: a discharge port for discharging the treatment liquid in the outer direction of the aforementioned radial direction; The protective cover moving step includes the following steps: when the treatment liquid is discharged from the discharge port, the treatment liquid discharge path is located in the vertical direction along the inner direction end of the first annular portion in the radial direction and the diameter The first protective cover and the second protective cover are moved between the inner direction ends of the second annular portion in the direction. 如請求項17所記載之基板處理方法，其中進一步包含：保護液供給工序，係與前述處理液排出工序並行地執行，用以朝前述基板的下表面供給用以保護前述基板的下表面之保護液； 前述防護罩移動工序係包含下述工序：以前述第二圓環部的徑方向內側方向端位於比前述排出口還更下側且比前述環狀構件的下端還更上側之方式使前述第二防護罩移動。The substrate processing method according to claim 17, further comprising: a protection liquid supply step, which is performed in parallel with the processing liquid discharge step, and is used to supply a protection for protecting the lower surface of the substrate to the lower surface of the substrate liquid; The protective cover moving step includes the step of making the second ring part at a lower side than the discharge port and higher than the lower end of the ring member so that the radially inner end of the second ring part is located above the bottom end of the annular member. The protective cover moves. 如請求項9或10所記載之基板處理方法，其中進一步包含：預清洗工序，係在前述處理液供給工序之前對前述基板的上表面供給清洗液； 在前述預清洗工序中供給至前述基板的上表面的清洗液係塞住前述環狀構件與前述基板之間的間隙並從前述處理液排出路徑排出； 前述預清洗工序係與前述氛圍置換工序並行地執行。The substrate processing method as recited in claim 9 or 10, further comprising: a pre-cleaning step of supplying a cleaning liquid to the upper surface of the substrate before the processing liquid supply step; The cleaning liquid supplied to the upper surface of the substrate in the pre-cleaning process plugs the gap between the annular member and the substrate and is discharged from the processing liquid discharge path; The aforementioned pre-cleaning step is performed in parallel with the aforementioned atmosphere replacement step.
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JP6881922B2 (en) * 2016-09-12 2021-06-02 株式会社Ｓｃｒｅｅｎホールディングス Board processing method and board processing equipment

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TWI825994B (en) * 2021-09-22 2023-12-11 日商斯庫林集團股份有限公司 Substrate processing apparatus

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