TW202112066A - Bulk-acoustic wave resonator - Google Patents

Bulk-acoustic wave resonator Download PDF

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TW202112066A
TW202112066A TW109117850A TW109117850A TW202112066A TW 202112066 A TW202112066 A TW 202112066A TW 109117850 A TW109117850 A TW 109117850A TW 109117850 A TW109117850 A TW 109117850A TW 202112066 A TW202112066 A TW 202112066A
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electrode
layer
inclined surface
resonator
bulk acoustic
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TW109117850A
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TWI841740B (en
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李泰勳
林昶賢
尹湘基
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南韓商三星電機股份有限公司
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/0211—Means for compensation or elimination of undesirable effects of reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0504—Holders; Supports for bulk acoustic wave devices

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  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

A bulk-acoustic wave resonator includes: a resonator comprising a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion to raise the piezoelectric layer. The insertion layer may have a first inclined surface formed along a side surface facing the central portion, and the first electrode may have a second inclined surface extending from a lower end of the first inclined surface of the insertion layer.

Description

整體聲波共振器Integral Acoustic Resonator

本發明是關於一種體聲波共振器。The present invention relates to a bulk acoustic wave resonator.

根據無線通信裝置之小型化趨勢，對高頻組件技術之小型化的需求越來越大。舉例而言，可使用利用半導體薄膜晶圓製造技術的體聲波（BAW）型濾波器。According to the miniaturization trend of wireless communication devices, there is an increasing demand for the miniaturization of high-frequency component technology. For example, a bulk acoustic wave (BAW) filter using semiconductor thin film wafer manufacturing technology can be used.

體聲波（BAW）共振器為薄膜型元件，其藉由將壓電介電材料沈積於矽晶圓、半導體基板上及使用其壓電特徵來產生共振以便實施為濾波器。A bulk acoustic wave (BAW) resonator is a thin-film element that is implemented as a filter by depositing piezoelectric dielectric materials on silicon wafers and semiconductor substrates and using its piezoelectric features to generate resonance.

近來，對5G通信之技術關注遞增，且正積極地執行可在候選頻帶中實施之技術的開發。Recently, there has been increasing interest in the technology of 5G communication, and the development of technologies that can be implemented in candidate frequency bands is being actively carried out.

然而，在使用Sub 6 GHz（4GHz至6 GHz）頻帶之5G通信之情況下，由於頻寬增加且通信距離縮短，因此信號之強度或功率可增加。另外，隨著頻率增加，壓電層或共振器中產生之損耗可增加。However, in the case of 5G communication using the Sub 6 GHz (4 GHz to 6 GHz) frequency band, as the bandwidth increases and the communication distance decreases, the strength or power of the signal can be increased. In addition, as the frequency increases, the loss generated in the piezoelectric layer or resonator may increase.

因此，存在對能夠最小化共振器中之能量洩漏的體聲波共振器之需求。Therefore, there is a need for a bulk acoustic wave resonator that can minimize the energy leakage in the resonator.

以上資訊僅作為背景資訊而呈現以輔助理解本發明。未進行關於上述中的任一者可能適用於關於本發明的先前技術的判定以及聲明。The above information is presented only as background information to assist the understanding of the present invention. No judgment and statement regarding any of the foregoing may be applicable to the prior art regarding the present invention.

提供此發明內容來以簡化形式引入下文在實施方式中進一步描述之一系列概念。此發明內容並不意欲識別所主張主題的關鍵特徵或基本特徵，亦不意欲在判定所主張主題的範疇過程中用作輔助。This content of the invention is provided to introduce in a simplified form a series of concepts that are further described in the embodiments below. This summary of the invention is not intended to identify the key features or basic features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.

在一個通用態樣中，一種體聲波共振器包含：共振器，其包含其中第一電極、壓電層以及第二電極依序堆疊於基板上的中心部分及沿著所述中心部分之周邊配置的延伸部分；及***層，其配置於所述延伸部分中之壓電層下方以使壓電層升高。***層具有面向中心部分之側表面形成的第一傾斜表面，且第一電極具有自***層之第一傾斜表面之下端延伸的第二傾斜表面。In a general aspect, a bulk acoustic wave resonator includes: a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate and arranged along the periphery of the central portion The extension portion; and the insertion layer, which is disposed under the piezoelectric layer in the extension portion to raise the piezoelectric layer. The insertion layer has a first inclined surface formed facing the side surface of the central portion, and the first electrode has a second inclined surface extending from the lower end of the first inclined surface of the insertion layer.

第二傾斜表面的傾斜角可低於第一傾斜表面。The inclination angle of the second inclined surface may be lower than that of the first inclined surface.

第一電極可包含小於第二傾斜表面之上端部分的厚度的第二傾斜表面之下端部分之厚度。The first electrode may include a thickness of a lower end portion of the second inclined surface that is smaller than a thickness of an upper end portion of the second inclined surface.

第二傾斜表面可配置於中心部分中。The second inclined surface may be arranged in the central part.

第一電極可為中心部分中之上表面及延伸部分中之上表面，所述上表面配置於彼此不同之平面上。The first electrode may be an upper surface in the central part and an upper surface in the extension part, and the upper surfaces are arranged on different planes.

體聲波共振器可更包含配置於第一電極及***層下方以支撐共振器之膜片層及將共振器與基板分離之空腔。The bulk acoustic wave resonator may further include a diaphragm layer disposed under the first electrode and the insertion layer to support the resonator and a cavity separating the resonator from the substrate.

第三傾斜表面可沿著第一電極之末端配置，且膜片層可具有自第三傾斜表面之下端延伸的第四傾斜表面。The third inclined surface may be arranged along the end of the first electrode, and the membrane layer may have a fourth inclined surface extending from the lower end of the third inclined surface.

第四傾斜表面可包含比第三傾斜表面低之傾斜角。The fourth inclined surface may include a lower inclination angle than the third inclined surface.

***層之末端可接觸第一電極之第三傾斜表面。The end of the insertion layer can contact the third inclined surface of the first electrode.

***層可比第一電極厚。The insertion layer may be thicker than the first electrode.

體聲波共振器可更包含將共振器容納於其中且接合至基板之罩蓋。The bulk acoustic wave resonator may further include a cover that accommodates the resonator and is bonded to the substrate.

體聲波共振器可更包含經配置以穿透罩蓋之多個通路孔，及配置於多個通路孔中以將第一電極及第二電極電連接至外部之多個連接導體。The bulk acoustic wave resonator may further include a plurality of via holes configured to penetrate the cover, and a plurality of connecting conductors arranged in the plurality of via holes to electrically connect the first electrode and the second electrode to the outside.

體聲波共振器可更包含接合至暴露於罩蓋之外部表面之多個連接導體的外部電極。The bulk acoustic wave resonator may further include external electrodes bonded to a plurality of connection conductors exposed on the external surface of the cover.

體聲波共振器可更包含第一金屬層及第二金屬層，所述第一金屬層及所述第二金屬層配置於共振器之外部且分別接合至第一電極及第二電極。多個連接導體可分別經由第一金屬層及第二金屬層電連接至第一電極及第二電極。The bulk acoustic wave resonator may further include a first metal layer and a second metal layer. The first metal layer and the second metal layer are disposed outside the resonator and are respectively connected to the first electrode and the second electrode. The plurality of connecting conductors may be electrically connected to the first electrode and the second electrode through the first metal layer and the second metal layer, respectively.

壓電層可包含配置於第一傾斜表面上之傾斜部分，且第二電極之末端可配置於壓電層之傾斜部分上。The piezoelectric layer may include an inclined portion arranged on the first inclined surface, and the end of the second electrode may be arranged on the inclined portion of the piezoelectric layer.

在另一通用態樣中，一種體聲波共振器包含：共振器，其包含其中第一電極、壓電層以及第二電極依序堆疊於基板上的中心部分及沿著所述中心部分之周邊配置的延伸部分；及***層，其配置於所述延伸部分中之壓電層下方以使壓電層升高，其中第一電極在中心部分中之厚度小於在延伸部分中之厚度。In another general aspect, a bulk acoustic wave resonator includes: a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate and a periphery along the central portion Configured extension portion; and an insertion layer disposed under the piezoelectric layer in the extension portion to raise the piezoelectric layer, wherein the thickness of the first electrode in the central portion is smaller than the thickness in the extension portion.

在另一通用態樣中，體聲波共振器包含：中心部分，其包括依序堆疊於基板上之第一電極、壓電層以及第二電極；以及沿著所述中心部分之周邊配置的延伸部分，其包含依序堆疊於基板上之第一電極、***層、壓電層以及第二電極，其中第一電極包含在中心部分中之第一反射界面。In another general aspect, the bulk acoustic wave resonator includes: a central portion including a first electrode, a piezoelectric layer, and a second electrode stacked on a substrate in sequence; and an extension arranged along the periphery of the central portion Part, which includes a first electrode, an insertion layer, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, wherein the first electrode includes a first reflective interface in the central part.

第一反射界面可包含自***層之下端朝向中心部分延伸之傾斜表面。The first reflective interface may include an inclined surface extending from the lower end of the insertion layer toward the central portion.

體聲波共振器可更包含配置於第一電極下方以支撐第一電極之膜片層及將第一電極與基板分離之空腔，其中膜片層可包含在延伸部分中之第二反射界面。The bulk acoustic resonator may further include a diaphragm layer disposed under the first electrode to support the first electrode and a cavity separating the first electrode from the substrate, wherein the diaphragm layer may include a second reflective interface in the extension portion.

第二反射界面可包含自第一電極之下端遠離中心部分延伸的傾斜表面。The second reflective interface may include an inclined surface extending away from the central portion from the lower end of the first electrode.

其他特徵及態樣將自以下實施方式、圖式以及申請專利範圍顯而易見。Other features and aspects will be apparent from the following embodiments, drawings, and scope of patent application.

提供以下詳細描述以幫助讀者獲得對本文中所描述的方法、設備及/或系統的全面理解。然而，在理解本發明之後，本文中所描述之方法、設備及/或系統的各種變化、修改及等效物將顯而易見。舉例而言，本文所描述的操作順序僅為實例，且不限於本文所闡述的實例，但除了必須按某一次序發生的操作以外，可改變操作順序，如在理解本發明之後顯而易見的。又，出於提高清晰性及簡潔性目的，可省略為此項技術中已知的特徵之描述。The following detailed description is provided to help readers gain a comprehensive understanding of the methods, devices and/or systems described in this article. However, after understanding the present invention, various changes, modifications and equivalents of the methods, devices and/or systems described herein will be apparent. For example, the order of operations described herein is only an example, and is not limited to the examples set forth herein, but in addition to operations that must occur in a certain order, the order of operations can be changed, as will be apparent after understanding the present invention. Moreover, for the purpose of improving clarity and conciseness, the description of the features known in the art may be omitted.

本文中所描述的特徵可以不同形式體現，且不應將所述特徵解釋為限於本文中所描述的實例。實情為，僅提供本文中所描述之實例以說明實施本文中所描述之方法、設備及/或系統之許多可能方式中的在理解本發明之後將會顯而易見的一些方式。The features described herein may be embodied in different forms, and the features should not be construed as being limited to the examples described herein. In fact, only the examples described herein are provided to illustrate some of the many possible ways of implementing the methods, devices and/or systems described herein, which will be obvious after understanding the present invention.

在本說明書通篇中，當諸如層、區域或基板之元件被描述為「位於另一元件上」、「連接至另一元件」或「耦接至另一元件」時，所述元件可直接「位於另一元件上」、「連接至另一元件」或「耦接至另一元件」，或其間可介入一或多個其他元件。相比之下，當元件被描述為「位於另一元件正上方」、「直接連接至另一元件」或「直接耦接至另一元件」時，其間可不介入其他元件。如本文中所使用，元件之「部分」可包含整個元件或少於整個元件。Throughout this specification, when an element such as a layer, region, or substrate is described as being "on another element," "connected to another element," or "coupled to another element," the element may be directly "On another element", "connected to another element" or "coupled to another element", or one or more other elements may be intervened in between. In contrast, when an element is described as being "directly above another element," "directly connected to another element," or "directly coupled to another element," other elements may not be intervened therebetween. As used herein, a "portion" of an element may include the entire element or less than the entire element.

如本文中所使用，術語「及/或」包含任何兩個或更多個相關所列項目中之任一者及任何組合；同樣，「…中之至少一者」包含任何兩個或更多個相關所列項目中之任一者及任何組合。As used herein, the term "and/or" includes any one and any combination of any two or more related listed items; likewise, "at least one of" includes any two or more Any one and any combination of the relevant listed items.

儘管諸如「第一」、「第二」、及「第三」之術語可在本文中用以描述各個構件、組件、區域、層或區段，但這些構件、組件、區域、層或區段並非受限於這些術語。實情為，這些術語僅用於區分一個構件、組件、區域、層或區段與另一構件、組件、區域、層或區段。因此，在不背離實例之教示的情況下，本文中所描述之實例中所參考的第一構件、組件、區域、層或區段亦可被稱作第二構件、組件、區域、層或區段。Although terms such as "first", "second", and "third" may be used herein to describe various members, components, regions, layers or sections, these members, components, regions, layers or sections Not limited to these terms. In fact, these terms are only used to distinguish one component, component, region, layer or section from another component, component, region, layer or section. Therefore, without departing from the teachings of the examples, the first member, component, region, layer or section referred to in the examples described herein can also be referred to as a second member, component, region, layer or section segment.

為了便於描述，在本文中可使用空間相對術語（諸如「在…上方」、「上部」、「在…下方」、「下部」以及類似者），以描述如諸圖中所示的一個元件與另一元件之間的關係。除諸圖中所描繪之定向以外，這些空間相對術語意欲涵蓋裝置在使用或操作中之不同定向。舉例而言，若圖中的裝置翻轉，則被描述為相對於另一元件「在…上方」或在「上部」的元件隨後將被描述為相對於另一元件「在…下方」或「下方」。因此，術語「在…上方」涵蓋視裝置之空間定向而定的上方及下方定向兩者。裝置亦可以其他方式定向（旋轉90度或呈其他定向），且相應地解釋本文所使用之空間相對術語。For ease of description, spatially relative terms (such as "above", "upper", "below", "lower" and the like may be used herein to describe an element as shown in the figures and The relationship between another element. In addition to the orientations depicted in the figures, these spatial relative terms are intended to cover different orientations of the device in use or operation. For example, if the device in the figure is turned over, the element described as "above" or "upper" with respect to another element will then be described as "below" or "below" with respect to another element ". Therefore, the term "above" encompasses both an upper and a lower orientation depending on the spatial orientation of the device. The device can also be oriented in other ways (rotated by 90 degrees or in other orientations), and the spatial relative terms used herein are explained accordingly.

本文所使用之術語僅用於描述各種實例，且並非用以限制本發明。除非上下文另有明確指示，否則冠詞「一（a/an）」及「所述（the）」亦意欲包含複數形式。術語「包括」、「包含」及「具有」指定存在所陳述之特徵、數目、操作、構件、元件及/或其組合，但並不排除存在或添加一或多個其他特徵、數目、操作、構件、元件及/或其組合。The terms used herein are only used to describe various examples, and are not used to limit the present invention. Unless the context clearly indicates otherwise, the articles "a/an" and "the" are also intended to include plural forms. The terms "including", "including" and "having" designate the presence of stated features, numbers, operations, components, elements, and/or combinations thereof, but do not exclude the presence or addition of one or more other features, numbers, operations, Components, elements and/or combinations thereof.

如在理解本發明之後將顯而易見的，本文中所描述之實例的特徵可以各種方式組合。此外，儘管本文中所描述之實例具有多種組態，但如在理解本發明之後將顯而易見的，其他組態亦是可能的。As will be apparent after understanding the present invention, the features of the examples described herein can be combined in various ways. In addition, although the examples described herein have multiple configurations, as will be apparent after understanding the present invention, other configurations are also possible.

在本文中，應注意，關於實例（例如關於實例可包含或實施何實例）使用術語「可」意謂存在至少一個實例，其中包含或實施此特徵，但所有實例不限於此。In this context, it should be noted that the use of the term "may" with respect to examples (for example, with regard to what examples an example may include or implement) means that there is at least one example in which this feature is included or implemented, but all examples are not limited thereto.

本發明之一態樣為提供能夠減少能量洩漏之體聲波共振器。One aspect of the present invention is to provide a bulk acoustic resonator capable of reducing energy leakage.

圖1為根據本發明之實施例的聲波共振器之平面圖，且圖2為沿圖1之線I-I'截取的橫截面圖。圖3為沿圖1之線II-II'截取的橫截面圖，圖4為沿圖1之線III-III'截取的橫截面圖，且圖5為圖2之一部分A的放大視圖。FIG. 1 is a plan view of an acoustic wave resonator according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line II′ of FIG. 1. 3 is a cross-sectional view taken along the line II-II' of FIG. 1, FIG. 4 is a cross-sectional view taken along the line III-III' of FIG. 1, and FIG. 5 is an enlarged view of a part A of FIG. 2.

參看圖1至圖5，根據本發明之實施例的聲波共振器100可為體聲波（bulk-acoustic wave, BAW）共振器，且可包含基板110、犧牲層140、共振器120以及***層170。1 to 5, the acoustic wave resonator 100 according to an embodiment of the present invention may be a bulk-acoustic wave (BAW) resonator, and may include a substrate 110, a sacrificial layer 140, a resonator 120, and an insertion layer 170 .

基板110可為矽基板。舉例而言，矽晶圓可用作基板110，或可使用絕緣體上矽（silicon on insulator, SOI）類型基板。The substrate 110 may be a silicon substrate. For example, a silicon wafer can be used as the substrate 110, or a silicon on insulator (SOI) type substrate can be used.

絕緣層115可提供於基板110之上表面上以將基板110與共振器120電隔離。另外，絕緣層115防止基板110在空腔C形成於聲波共振器之製造製程中時由蝕刻氣體蝕刻。The insulating layer 115 may be provided on the upper surface of the substrate 110 to electrically isolate the substrate 110 from the resonator 120. In addition, the insulating layer 115 prevents the substrate 110 from being etched by the etching gas when the cavity C is formed in the manufacturing process of the acoustic resonator.

在此情況下，絕緣層115可由二氧化矽（SiO2 ）、氮化矽（Si3 N4 ）、氧化鋁（Al2 O3 ）以及氮化鋁（AlN）中的至少一者形成，且可經由化學氣相沈積、RF磁控濺鍍以及蒸發的任一個製程形成。In this case, the insulating layer 115 may be formed of at least one of silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), and aluminum nitride (AlN), and It can be formed by any process of chemical vapor deposition, RF magnetron sputtering and evaporation.

犧牲層140形成於絕緣層115上，且空腔C及蝕刻終止部分145配置於犧牲層140中。The sacrificial layer 140 is formed on the insulating layer 115, and the cavity C and the etching stop portion 145 are disposed in the sacrificial layer 140.

空腔C形成為空白空間，且可藉由移除犧牲層140的一部分而形成。The cavity C is formed as a blank space, and may be formed by removing a part of the sacrificial layer 140.

當空腔C形成於犧牲層140中時，形成於犧牲層140上方之共振器120可形成為完全平坦的。When the cavity C is formed in the sacrificial layer 140, the resonator 120 formed above the sacrificial layer 140 may be formed completely flat.

蝕刻終止部分145沿腔體C之邊界配置。提供蝕刻終止部分145以防止蝕刻的執行在形成空腔C之製程中超出空腔區。The etching stop portion 145 is arranged along the boundary of the cavity C. The etching stop portion 145 is provided to prevent the execution of the etching from exceeding the cavity area during the process of forming the cavity C.

膜片層150形成於犧牲層140上，且形成空腔C之上部表面。因此，膜片層150亦由在形成空腔C之製程中不易於移除之材料形成。The diaphragm layer 150 is formed on the sacrificial layer 140 and forms the upper surface of the cavity C. Therefore, the diaphragm layer 150 is also formed of a material that is not easily removed during the process of forming the cavity C.

舉例而言，當使用諸如氟（F）、氯（Cl）或其類似者之鹵化物類蝕刻氣體來移除犧牲層140之一部分（例如，空腔區）時，膜片層150可由與蝕刻氣體具有低反應性之材料製成。在此情況下，膜片層150可包含二氧化矽（SiO2 ）及氮化矽（Si3 N4 ）中之至少一者。For example, when a halide etching gas such as fluorine (F), chlorine (Cl) or the like is used to remove a part of the sacrificial layer 140 (for example, the cavity region), the diaphragm layer 150 can be etched with Made of materials with low gas reactivity. In this case, the diaphragm layer 150 may include at least one of silicon dioxide (SiO 2 ) and silicon nitride (Si 3 N 4 ).

膜片層150可由含有氧化鎂（MgO）、氧化鋯（ZrO2）、氮化鋁（AlN）、鋯鈦酸鉛（PZT）、砷化鎵（GaAs）、氧化鉿（HfO2 ）及氧化鋁（Al2 O3 ）、氧化鈦（TiO2 ）以及氧化鋅（ZnO）中之至少一種材料的介電層及含有鋁（Al）、鎳（Ni）、鉻（Cr）、鉑（Pt）、鎵（Ga）以及鉿（Hf）中之至少一種材料的金屬層製成。然而，本發明不限於此。The membrane layer 150 may contain magnesium oxide (MgO), zirconium oxide (ZrO2), aluminum nitride (AlN), lead zirconate titanate (PZT), gallium arsenide (GaAs), hafnium oxide (HfO 2 ) and aluminum oxide ( A dielectric layer of at least one of Al 2 O 3 ), titanium oxide (TiO 2 ), and zinc oxide (ZnO) and a dielectric layer containing aluminum (Al), nickel (Ni), chromium (Cr), platinum (Pt), and gallium (Ga) and hafnium (Hf) are made of a metal layer of at least one material. However, the present invention is not limited to this.

共振器120包含第一電極121、壓電層123以及第二電極125。共振器120經組態使得第一電極121、壓電層123以及第二電極125自底部按次序堆疊。因此，共振器120中之壓電層123配置於第一電極121與第二電極125之間。The resonator 120 includes a first electrode 121, a piezoelectric layer 123 and a second electrode 125. The resonator 120 is configured such that the first electrode 121, the piezoelectric layer 123, and the second electrode 125 are sequentially stacked from the bottom. Therefore, the piezoelectric layer 123 in the resonator 120 is disposed between the first electrode 121 and the second electrode 125.

由於共振器120形成於膜片層150上，因此膜片層150、第一電極121、壓電層123以及第二電極125依序堆疊於基板110上以形成共振器120。Since the resonator 120 is formed on the diaphragm layer 150, the diaphragm layer 150, the first electrode 121, the piezoelectric layer 123, and the second electrode 125 are sequentially stacked on the substrate 110 to form the resonator 120.

共振器120可根據施加至第一電極121及第二電極125之信號使壓電層123共振以產生共振頻率及抗共振頻率。The resonator 120 can resonate the piezoelectric layer 123 according to the signals applied to the first electrode 121 and the second electrode 125 to generate a resonance frequency and an anti-resonance frequency.

共振器120可劃分成：中心部分S，其中第一電極121、壓電層123以及第二電極125堆疊成實質上平坦的；及延伸部分E，其中***層170***於第一電極121與壓電層123之間。The resonator 120 can be divided into: a central part S, in which the first electrode 121, the piezoelectric layer 123, and the second electrode 125 are stacked to be substantially flat; and an extension part E, in which the insertion layer 170 is inserted into the first electrode 121 and the pressure Between electrical layers 123.

中心部分S為配置於共振器120之中心處的區域，且延伸部分E為沿著中心部分S之周邊配置的區域。因此，延伸部分E為自中心部分S向外延伸的區域，且是指形成為沿著中心部分S之周邊具有連續環形形狀的區域。然而，必要時，延伸部分E可經組態以具有不連續環形形狀，其中一些區域分離。The central part S is an area arranged at the center of the resonator 120, and the extension part E is an area arranged along the periphery of the central part S. Therefore, the extension portion E is an area extending outward from the central portion S, and refers to an area formed to have a continuous annular shape along the periphery of the central portion S. However, if necessary, the extension portion E may be configured to have a discontinuous ring shape, in which some areas are separated.

因此，如圖2中所示，在共振器120的經切割以與中心部分S交叉的橫截面中，延伸部分E分別配置於中心部分S之兩端處。***層170配置於延伸部分E中之中心部分S之兩側上，所述延伸部分E配置於中心部分S之兩端上。Therefore, as shown in FIG. 2, in the cross section of the resonator 120 cut to cross the central part S, the extension parts E are arranged at both ends of the central part S, respectively. The insertion layer 170 is disposed on both sides of the central part S in the extension part E, and the extension part E is disposed on both ends of the central part S.

***層170具有傾斜表面L，其厚度隨著距中心部分S之距離增加而變得更大。The insertion layer 170 has an inclined surface L whose thickness becomes larger as the distance from the center portion S increases.

在延伸部分E中，壓電層123及第二電極125配置於***層170上。因此，位於延伸部分E中之壓電層123及第二電極125沿***層170之形狀具有傾斜表面。In the extension part E, the piezoelectric layer 123 and the second electrode 125 are disposed on the insertion layer 170. Therefore, the piezoelectric layer 123 and the second electrode 125 located in the extension portion E have inclined surfaces along the shape of the insertion layer 170.

在本發明實施例中，延伸部分E包含於共振器120中，且因此，共振可發生在延伸部分E中。然而，本發明不限於此，且共振可取決於延伸部分E之結構而不存在於延伸部分E中，但共振可僅在中心部分S中進行。In the embodiment of the present invention, the extension part E is included in the resonator 120, and therefore, resonance may occur in the extension part E. However, the present invention is not limited to this, and resonance may not exist in the extension E depending on the structure of the extension E, but the resonance may only be performed in the central part S.

第一電極121及第二125可由導體形成，例如，可由以下各者形成：金、鉬、釕、銥、鋁、鉑、鈦、鎢、鈀、鉭、鉻、鎳或含有其中至少一者之金屬，但不限於此。The first electrode 121 and the second electrode 125 may be formed of a conductor, for example, may be formed of any of the following: gold, molybdenum, ruthenium, iridium, aluminum, platinum, titanium, tungsten, palladium, tantalum, chromium, nickel, or one containing at least one of them Metal, but not limited to this.

在共振器120中，第一電極121形成為面積大於第二電極125，且第一金屬層180沿著第一電極121之周邊配置於第一電極121上。因此，第一金屬層180可配置成與第二電極125間隔預定距離，且可配置成圍繞共振器120之形式。In the resonator 120, the first electrode 121 is formed to have an area larger than the second electrode 125, and the first metal layer 180 is disposed on the first electrode 121 along the periphery of the first electrode 121. Therefore, the first metal layer 180 may be configured to be separated from the second electrode 125 by a predetermined distance, and may be configured to surround the resonator 120.

由於第一電極121配置於膜片層150上，因此第一電極121整體上形成為扁平的。由於第二電極125配置於壓電層123上，因此可形成對應於壓電層123之形狀的彎曲部（curving）。Since the first electrode 121 is disposed on the diaphragm layer 150, the first electrode 121 is formed flat as a whole. Since the second electrode 125 is disposed on the piezoelectric layer 123, a curve corresponding to the shape of the piezoelectric layer 123 can be formed.

第一電極121可用作輸入電極及輸出電極中之一者以用於輸入及輸出諸如射頻（radio frequency, RF）信號之電信號。The first electrode 121 can be used as one of an input electrode and an output electrode for inputting and outputting electrical signals such as radio frequency (RF) signals.

第二電極125完全配置於中心部分S中且部分地配置於延伸部分E中。因此，第二電極125可劃分成配置於稍後將描述之壓電層123之壓電部分123a上的一部分及配置於壓電層123之彎曲部分123b上的一部分。The second electrode 125 is completely disposed in the central portion S and partially disposed in the extension portion E. Therefore, the second electrode 125 can be divided into a part arranged on the piezoelectric part 123a of the piezoelectric layer 123, which will be described later, and a part arranged on the curved part 123b of the piezoelectric layer 123.

更具體言之，在本發明實施例中，第二電極125配置成覆蓋整個壓電部分123a及壓電層123之傾斜部分1231之一部分。因此，配置於延伸部分E中之第二電極（圖4中之第二電極125a）形成為面積小於傾斜部分1231之傾斜表面，且共振器120中之第二電極125形成為面積小於壓電層123。More specifically, in the embodiment of the present invention, the second electrode 125 is configured to cover the entire piezoelectric portion 123 a and a part of the inclined portion 1231 of the piezoelectric layer 123. Therefore, the second electrode (the second electrode 125a in FIG. 4) disposed in the extension portion E is formed to have an area smaller than the inclined surface of the inclined portion 1231, and the second electrode 125 in the resonator 120 is formed to have an area smaller than that of the piezoelectric layer 123.

因此，如圖2中所說明，在共振器120經切割以與中心部分S交叉的橫截面中，第二電極125之末端配置於延伸部分E中。另外，配置於延伸部分E中的第二電極125之末端之至少一部分配置成與***層170重疊。此處，「重疊」意謂當第二電極125投影在***層170所配置在之平面上時，投影在所述平面上之第二電極125之形狀與***層170重疊。Therefore, as illustrated in FIG. 2, in the cross section where the resonator 120 is cut to cross the central portion S, the end of the second electrode 125 is disposed in the extension portion E. In addition, at least a part of the end of the second electrode 125 arranged in the extension portion E is arranged to overlap the insertion layer 170. Here, “overlap” means that when the second electrode 125 is projected on the plane where the insertion layer 170 is arranged, the shape of the second electrode 125 projected on the plane overlaps the insertion layer 170.

第二電極125可用作輸入電極及輸出電極中之一者以用於輸入及輸出諸如射頻（RF）信號或其類似者之電信號。亦即，當第一電極121用作輸入電極時，第二電極125可用作輸出電極，且當第一電極121用作輸出電極時，第二電極125可用作輸入電極。The second electrode 125 may be used as one of an input electrode and an output electrode for inputting and outputting electrical signals such as radio frequency (RF) signals or the like. That is, when the first electrode 121 is used as an input electrode, the second electrode 125 may be used as an output electrode, and when the first electrode 121 is used as an output electrode, the second electrode 125 may be used as an input electrode.

如圖4中所說明，當第二電極125之末端定位於稍後將描述之壓電層123之傾斜部分1231上時，由於共振器120之聲波阻抗的局部結構形成於來自中心部分S之稀疏/密集/密集結構中，因此自共振器120向內反射側向波的反射界面增加。因此，由於大部分側向波不自共振器向外流動，且被反射且接著流動至共振器120之內部，因此可改良聲學共振器之效能。As illustrated in FIG. 4, when the end of the second electrode 125 is positioned on the inclined portion 1231 of the piezoelectric layer 123 to be described later, the local structure of the acoustic impedance of the resonator 120 is formed from the sparseness of the central portion S. In the /dense/dense structure, the reflection interface at which the side wave is reflected inward from the resonator 120 increases. Therefore, since most of the side waves do not flow outward from the resonator, and are reflected and then flow into the interior of the resonator 120, the performance of the acoustic resonator can be improved.

壓電層123為經由壓電效應將電能轉換成呈彈性波形式之機械能的部分，且形成於稍後將描述之第一電極121及***層170上。The piezoelectric layer 123 is a part that converts electrical energy into mechanical energy in the form of elastic waves through a piezoelectric effect, and is formed on the first electrode 121 and the insertion layer 170 which will be described later.

作為壓電層123之材料，可選擇性地使用氧化鋅（ZnO）、氮化鋁（AlN）、摻雜氮化鋁、鋯鈦酸鉛、石英及其類似者。在摻雜氮化鋁之情況下，可更包含稀土金屬、過渡金屬或鹼土金屬。稀土金屬可包含鈧（Sc）、鉺（Er）、釔（Y）及鑭（La）中之至少一者。過渡金屬可包含鉿（Hf）、鈦（Ti）、鋯（Zr）、鉭（Ta）以及鈮（Nb）中之至少一者。另外，鹼土金屬可包含鎂（Mg）。As the material of the piezoelectric layer 123, zinc oxide (ZnO), aluminum nitride (AlN), doped aluminum nitride, lead zirconate titanate, quartz, and the like can be selectively used. In the case of doped aluminum nitride, it may further contain rare earth metals, transition metals or alkaline earth metals. The rare earth metal may include at least one of scandium (Sc), erbium (Er), yttrium (Y), and lanthanum (La). The transition metal may include at least one of hafnium (Hf), titanium (Ti), zirconium (Zr), tantalum (Ta), and niobium (Nb). In addition, the alkaline earth metal may contain magnesium (Mg).

為了改良壓電性質，當摻雜有氮化鋁（AlN）之元素的含量小於0.1原子%時，不能實現高於氮化鋁（AlN）之壓電性質。當元素之含量超過30原子%時，難以製造及控制用於沈積之組成物，使得可形成不均勻或非所需結晶相。In order to improve the piezoelectric properties, when the content of the element doped with aluminum nitride (AlN) is less than 0.1 at%, the piezoelectric properties higher than that of aluminum nitride (AlN) cannot be achieved. When the content of the element exceeds 30 atomic %, it is difficult to manufacture and control the composition for deposition, so that an uneven or undesirable crystalline phase can be formed.

因此，在本發明實施例中，摻雜有氮化鋁（AlN）的元素的含量在0.1原子%至30原子%的範圍內。Therefore, in the embodiment of the present invention, the content of the element doped with aluminum nitride (AlN) is in the range of 0.1 atomic% to 30 atomic %.

在本發明實施例中，壓電層在氮化鋁（AlN）中摻雜有鈧（Sc）。在此情況下，可增加壓電常數以增加聲學共振器之Kt 2 。然而，本發明之組態不限於此。In the embodiment of the present invention, the piezoelectric layer is doped with scandium (Sc) in aluminum nitride (AlN). In this case, the piezoelectric constant can be increased to increase the K t 2 of the acoustic resonator. However, the configuration of the present invention is not limited to this.

根據本發明實施例之壓電層123包含配置於中心部分S中之壓電部分123a及配置於延伸部分E中之彎曲部分123b。The piezoelectric layer 123 according to the embodiment of the present invention includes a piezoelectric part 123a arranged in the central part S and a curved part 123b arranged in the extension part E.

壓電部分123a為直接堆疊於第一電極121之上表面上的部分。因此，壓電部分123a***第一電極121與第二電極125之間以與第一電極121及第二電極125一起形成扁平形狀。The piezoelectric portion 123a is a portion directly stacked on the upper surface of the first electrode 121. Therefore, the piezoelectric portion 123a is inserted between the first electrode 121 and the second electrode 125 to form a flat shape together with the first electrode 121 and the second electrode 125.

彎曲部分123b可理解為自壓電部分123a延伸至外部且定位於延伸部分E中之區域。The curved portion 123b can be understood as a region extending from the piezoelectric portion 123a to the outside and positioned in the extending portion E.

彎曲部分123b配置於稍後將描述的***層170上，且形成為上表面沿著***層170的形狀升高的形狀。因此，壓電層123在壓電部分123a與彎曲部分123b之間的邊界處彎曲，且彎曲部分123b對應於***層170之厚度及形狀而升高。The bent portion 123b is disposed on the insertion layer 170 to be described later, and is formed in a shape in which the upper surface is raised along the shape of the insertion layer 170. Therefore, the piezoelectric layer 123 is bent at the boundary between the piezoelectric portion 123a and the bent portion 123b, and the bent portion 123b is raised corresponding to the thickness and shape of the insertion layer 170.

彎曲部分123b可劃分成傾斜部分1231及延伸部分1232。The curved portion 123b can be divided into an inclined portion 1231 and an extending portion 1232.

傾斜部分1231是指沿著稍後將描述的***層170的傾斜表面L傾斜的部分。延伸部分1232是指自傾斜部分1231延伸至外部的部分。The inclined portion 1231 refers to a portion inclined along an inclined surface L of the insertion layer 170 which will be described later. The extending portion 1232 refers to a portion extending from the inclined portion 1231 to the outside.

傾斜部分1231平行於***層170之傾斜表面L而形成，且傾斜部分1231之傾斜角可形成為與***層170之傾斜表面L的傾斜角相同。The inclined portion 1231 is formed parallel to the inclined surface L of the insertion layer 170, and the inclined angle of the inclined portion 1231 may be formed to be the same as the inclined angle of the inclined surface L of the insertion layer 170.

***層170沿著由膜片層150、第一電極121以及蝕刻終止部分145形成之表面配置。因此，***層170部分地配置於共振器120中，且配置於第一電極121與壓電層123之間。The insertion layer 170 is arranged along the surface formed by the diaphragm layer 150, the first electrode 121 and the etching stop portion 145. Therefore, the insertion layer 170 is partially disposed in the resonator 120 and is disposed between the first electrode 121 and the piezoelectric layer 123.

***層170配置於中心部分S周圍以支撐壓電層123之彎曲部分123b。因此，壓電層123之彎曲部分123b可沿著***層170之形狀劃分成傾斜部分1231及延伸部分1232。The insertion layer 170 is disposed around the central portion S to support the bent portion 123 b of the piezoelectric layer 123. Therefore, the bent portion 123b of the piezoelectric layer 123 can be divided into an inclined portion 1231 and an extended portion 1232 along the shape of the insertion layer 170.

***層170配置於除了中心部分S以外的區域中。舉例而言，***層170可在除了中心部分S以外的整個區域中或在一些區域中配置於基板110上。The insertion layer 170 is arranged in an area other than the central portion S. For example, the insertion layer 170 may be disposed on the substrate 110 in the entire area except the central portion S or in some areas.

***層170形成為厚度隨著面向中心部分S之側表面移動遠離中心部分S而變大。由此，***層170由具有恆定傾斜角θ之傾斜表面L及面向中心部分S之側表面形成。The insertion layer 170 is formed so that the thickness becomes larger as the side surface facing the central portion S moves away from the central portion S. Thus, the insertion layer 170 is formed by the inclined surface L having a constant inclination angle θ and the side surface facing the central portion S.

當***層170之側表面的傾斜角θ形成為小於5°時，為了製造所述***層170，由於***層170應該形成為厚度極薄的或傾斜表面L的面積應該特別大，所以實際上難以實施。When the inclination angle θ of the side surface of the insertion layer 170 is formed to be less than 5°, in order to manufacture the insertion layer 170, the insertion layer 170 should be formed to be extremely thin or the area of the inclined surface L should be particularly large, so in fact Difficult to implement.

另外，當***層170之側表面的傾斜角θ大於70°時，堆疊在***層170上之壓電層123或第二電極125的傾斜角亦形成為大於70°。在此情況下，由於堆疊於傾斜表面L上之壓電層123或第二電極125為過度彎曲的，因此可在彎曲部分中產生裂紋。In addition, when the inclination angle θ of the side surface of the insertion layer 170 is greater than 70°, the inclination angle of the piezoelectric layer 123 or the second electrode 125 stacked on the insertion layer 170 is also formed to be greater than 70°. In this case, since the piezoelectric layer 123 or the second electrode 125 stacked on the inclined surface L is excessively bent, cracks may be generated in the bent portion.

因此，在本發明實施例中，傾斜表面L之傾斜角θ形成於5°或大於5°及70°或小於70°之範圍內。Therefore, in the embodiment of the present invention, the inclination angle θ of the inclined surface L is formed in the range of 5° or more than 5° and 70° or less than 70°.

在本發明實施例中，壓電層123之傾斜部分1231沿***層170之傾斜表面L形成，且因此形成為與***層170之傾斜表面L具有相同傾斜角。因此，傾斜部分1231之傾斜角亦形成於5°或大於5°及70°或小於70°之範圍內，與***層170之傾斜表面L類似。所述組態同樣適用於堆疊在***層170之傾斜表面L上之第二電極125。In the embodiment of the present invention, the inclined portion 1231 of the piezoelectric layer 123 is formed along the inclined surface L of the insertion layer 170 and is therefore formed to have the same inclination angle as the inclined surface L of the insertion layer 170. Therefore, the inclination angle of the inclined portion 1231 is also formed in the range of 5° or more and 70° or less than 70°, which is similar to the inclined surface L of the insertion layer 170. The configuration is also applicable to the second electrode 125 stacked on the inclined surface L of the insertion layer 170.

***層170可由諸如以下各者的介電材料形成：氧化矽（SiO2 ）、氮化鋁（AlN）、氧化鋁（Al2 O3 ）、氮化矽（Si3 N4 ）、氧化鎂（MgO）、氧化鋯（ZrO2 ）、鋯鈦酸鉛（PZT）以及砷化鎵（GaAs）、氧化鉿（HfO2 ）、氧化鈦（TiO2 ）以及氧化鋅（ZnO），但可由來自壓電層123的材料形成。The insertion layer 170 may be formed of a dielectric material such as: silicon oxide (SiO 2 ), aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), silicon nitride (Si 3 N 4 ), magnesium oxide ( MgO), zirconium oxide (ZrO 2 ), lead zirconium titanate (PZT) and gallium arsenide (GaAs), hafnium oxide (HfO 2 ), titanium oxide (TiO 2 ) and zinc oxide (ZnO), but can be derived from piezoelectric The material of layer 123 is formed.

另外，***層170可藉由金屬材料實施。當本發明實施例之體積聲學共振器用於5G通信時，藉由共振器產生大量熱量，且因此需要平滑地釋放由共振器120產生之熱量。為此目的，此實施例之***層170可由含有鈧（Sc）之鋁合金材料製成。In addition, the insertion layer 170 may be implemented by a metal material. When the volume acoustic resonator of the embodiment of the present invention is used for 5G communication, a large amount of heat is generated by the resonator, and therefore, the heat generated by the resonator 120 needs to be smoothly released. For this purpose, the insertion layer 170 of this embodiment may be made of an aluminum alloy material containing scandium (Sc).

共振器120配置成經由配置於膜片層150下方之空腔C與基板110間隔開。因此，膜片層150配置於第一電極121及***層170下方以支撐共振器120。The resonator 120 is configured to be spaced apart from the substrate 110 via a cavity C disposed under the diaphragm layer 150. Therefore, the diaphragm layer 150 is disposed under the first electrode 121 and the insertion layer 170 to support the resonator 120.

空腔C形成為空白空間，且可藉由在製造聲學共振器之製程中將蝕刻氣體（或蝕刻溶液）供應至吸入孔（圖1中的吸入孔H）來移除一部分犧牲層140而形成。The cavity C is formed as a blank space, and can be formed by supplying etching gas (or etching solution) to the suction hole (the suction hole H in FIG. 1) during the process of manufacturing the acoustic resonator to remove a part of the sacrificial layer 140 .

保護層127沿著聲學共振器100之表面配置以從外部保護聲學共振器100。保護層127可沿由第二電極125及壓電層123之彎曲部分123b形成之表面配置。The protective layer 127 is disposed along the surface of the acoustic resonator 100 to protect the acoustic resonator 100 from the outside. The protective layer 127 may be disposed along the surface formed by the second electrode 125 and the bent portion 123b of the piezoelectric layer 123.

保護層127可形成為含有氮化矽（Si3 N4 ）、氧化矽（SiO2 ）、氧化鎂（MgO）、氧化鋯（ZrO2 ）、氮化鋁（AlN）、矽鈦酸鉛（PZT）、砷化鎵（GaAs）、氧化鉿（HfO2 ）、氧化鋁（Al2 O3 ）、氧化鈦（TiO2 ）以及氧化鋅（ZnO）中之任一者的介電層，但不限於此。The protective layer 127 may be formed to contain silicon nitride (Si 3 N 4 ), silicon oxide (SiO 2 ), magnesium oxide (MgO), zirconium oxide (ZrO 2 ), aluminum nitride (AlN), lead silicate titanate (PZT) ), gallium arsenide (GaAs), hafnium oxide (HfO 2 ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), and zinc oxide (ZnO) dielectric layer, but not limited to this.

保護層127可形成為單層，但可藉由視需要堆疊具有不同材料之兩個層來形成。另外，可部分地移除保護層127以調整最終製程中的頻率。例如，可在頻率微調製程中調整保護層127之厚度。The protective layer 127 may be formed as a single layer, but may be formed by stacking two layers with different materials as necessary. In addition, the protective layer 127 can be partially removed to adjust the frequency in the final manufacturing process. For example, the thickness of the protective layer 127 can be adjusted in the frequency micro-modulation process.

第一電極121及第二電極125可延伸至共振器120之外。第一金屬層180及第二金屬層190可分別配置於延伸部分的上表面上。The first electrode 121 and the second electrode 125 may extend beyond the resonator 120. The first metal layer 180 and the second metal layer 190 may be respectively disposed on the upper surface of the extension portion.

第一金屬層180及第二金屬層190可由金（Au）、金-錫（Au-Sn）合金、銅（Cu）、銅-錫（Cu-Sn）合金、鋁（Al）、鋁合金或其組合製成。此處，鋁合金可為鋁-鍺（Al-Ge）合金或鋁-鈧（Al-Sc）合金。The first metal layer 180 and the second metal layer 190 may be made of gold (Au), gold-tin (Au-Sn) alloy, copper (Cu), copper-tin (Cu-Sn) alloy, aluminum (Al), aluminum alloy or The combination is made. Here, the aluminum alloy may be an aluminum-germanium (Al-Ge) alloy or an aluminum-scandium (Al-Sc) alloy.

第一金屬層180及第二金屬層190可充當分別電連接基板110上之根據本發明實施例之聲學共振器的第一電極121及第二電極125並電連接彼此鄰接配置之其他聲學共振器的電極的連接佈線，或充當用於外部連接之端子。然而，其不限於此。The first metal layer 180 and the second metal layer 190 can be used to electrically connect the first electrode 121 and the second electrode 125 of the acoustic resonator according to the embodiment of the present invention on the substrate 110 and electrically connect to other acoustic resonators arranged adjacent to each other. The connection wiring of the electrode, or as a terminal for external connection. However, it is not limited to this.

第一金屬層180可穿透保護層127且接合至第一電極121。The first metal layer 180 may penetrate the protective layer 127 and be bonded to the first electrode 121.

另外，在共振器120中，第一電極121形成為面積比第二電極125大，且第一金屬層180形成於第一電極121之周邊上。In addition, in the resonator 120, the first electrode 121 is formed to have a larger area than the second electrode 125, and the first metal layer 180 is formed on the periphery of the first electrode 121.

因此，第一金屬層180沿共振器120之周邊配置，且因此配置成圍繞第二電極125之形式。然而，其不限於此。Therefore, the first metal layer 180 is arranged along the periphery of the resonator 120 and is therefore arranged in a form surrounding the second electrode 125. However, it is not limited to this.

在如上文所描述而組態的根據本發明實施例之體聲波共振器100中，如圖4至圖6中所說明，第二傾斜表面L2形成於第一電極121之上表面上。In the bulk acoustic resonator 100 according to the embodiment of the present invention configured as described above, as illustrated in FIGS. 4 to 6, the second inclined surface L2 is formed on the upper surface of the first electrode 121.

第二傾斜表面L2形成為自上述***層170之傾斜表面（下文稱為第一傾斜表面L）延伸，且形成為具有小於第一傾斜表面L之傾斜角θ的傾斜角θ2。The second inclined surface L2 is formed to extend from the inclined surface of the aforementioned insertion layer 170 (hereinafter referred to as the first inclined surface L), and is formed to have an inclination angle θ2 smaller than the inclination angle θ of the first inclined surface L.

在共振器120的經切割以與中心部分S交叉的橫截面中，***層170可分別配置於位於中心部分S之兩側上的延伸部分E中。第二傾斜表面L2以自第一傾斜表面L延伸之形式配置於中心部分S之兩側上。因而，第二傾斜表面L2可沿形成於***層170中之整個第一傾斜表面L形成。In the cross section of the resonator 120 cut to cross the central portion S, the insertion layers 170 may be respectively arranged in the extension portions E located on both sides of the central portion S. The second inclined surface L2 is arranged on both sides of the central portion S in a form extending from the first inclined surface L. Thus, the second inclined surface L2 may be formed along the entire first inclined surface L formed in the insertion layer 170.

由於***層170沿著中心部分S的邊界配置於延伸部分E中，因此第二傾斜表面L2沿著中心部分S的邊界配置於中心部分S中。另外，第一電極121的自第二傾斜表面L2之下端延伸的上表面形成為平坦表面。因此，在第一電極121中，中心部分S中之上表面及延伸部分E中之上表面配置於不同平面上。另外，關於第二傾斜表面L2，配置於中心部分S（其為第二傾斜表面L2之下端部分）中的第一電極121之厚度t1形成為小於配置於延伸部分E（其為第二傾斜表面L2之上端部分）中的第一電極121之厚度t2。Since the insertion layer 170 is arranged in the extension portion E along the boundary of the central portion S, the second inclined surface L2 is arranged in the central portion S along the boundary of the central portion S. In addition, the upper surface of the first electrode 121 extending from the lower end of the second inclined surface L2 is formed as a flat surface. Therefore, in the first electrode 121, the upper surface of the central portion S and the upper surface of the extension portion E are arranged on different planes. In addition, with regard to the second inclined surface L2, the thickness t1 of the first electrode 121 arranged in the central portion S (which is the lower end portion of the second inclined surface L2) is formed to be smaller than the thickness t1 arranged in the extension portion E (which is the second inclined surface). The thickness t2 of the first electrode 121 in the upper end portion of L2).

第二傾斜表面L2可藉由蝕刻定位於中心部分S中的第一電極121之上表面之一部分而形成。在此製程中，***層170可用作遮罩。因此，第二傾斜表面L2是以自第一傾斜表面L延伸之形式形成。The second inclined surface L2 may be formed by etching a part of the upper surface of the first electrode 121 positioned in the central portion S. In this process, the insertion layer 170 can be used as a mask. Therefore, the second inclined surface L2 is formed in a form extending from the first inclined surface L.

當第二傾斜表面L2如上文所描述提供於第一電極121中時，反射界面Q1可沿著第一電極121之平坦表面與第二傾斜表面L2之間的邊界形成。因此，除了圖4中所示之稀疏/密集/稀疏/密集結構以外，由於提供另外的反射界面Q1，因此有可能進一步抑制共振器120中之能量洩漏至共振器120之外，由此改良體聲波共振器之效能。When the second inclined surface L2 is provided in the first electrode 121 as described above, the reflective interface Q1 may be formed along the boundary between the flat surface of the first electrode 121 and the second inclined surface L2. Therefore, in addition to the sparse/dense/sparse/dense structure shown in FIG. 4, since an additional reflective interface Q1 is provided, it is possible to further suppress the leakage of energy in the resonator 120 to the outside of the resonator 120, thereby improving the body The effectiveness of acoustic resonators.

另外，根據本發明實施例之體聲波共振器可包含形成於膜片層150中之第四傾斜表面L4，如圖5中所示。In addition, the bulk acoustic resonator according to the embodiment of the present invention may include a fourth inclined surface L4 formed in the diaphragm layer 150, as shown in FIG. 5.

第四傾斜表面L4形成為自形成於第一電極121之末端處的傾斜表面L3（在下文中稱作第三傾斜表面）延伸。The fourth inclined surface L4 is formed to extend from an inclined surface L3 (hereinafter referred to as a third inclined surface) formed at the end of the first electrode 121.

類似於第二傾斜表面L2，第四傾斜表面L4形成為具有小於第三傾斜表面L3之傾斜角θ3的傾斜角θ4。Similar to the second inclined surface L2, the fourth inclined surface L4 is formed to have an inclination angle θ4 smaller than the inclination angle θ3 of the third inclined surface L3.

關於第四傾斜表面L4，第四傾斜表面L4之下端部分中的膜片層150之厚度t3形成為小於第四傾斜表面L4之上端部分中的膜片層150之厚度t4。Regarding the fourth inclined surface L4, the thickness t3 of the diaphragm layer 150 in the lower end portion of the fourth inclined surface L4 is formed to be smaller than the thickness t4 of the diaphragm layer 150 in the upper end portion of the fourth inclined surface L4.

第四傾斜表面L4可沿著形成於第一電極121上之整個第三傾斜表面L3形成於膜片層150中。The fourth inclined surface L4 may be formed in the diaphragm layer 150 along the entire third inclined surface L3 formed on the first electrode 121.

第四傾斜表面L4可藉由部分地蝕刻膜片層150之上表面而形成。在此製程中，第一電極121可用作遮罩。因此，第四傾斜表面L4是自第三傾斜表面L3延伸而形成。The fourth inclined surface L4 may be formed by partially etching the upper surface of the diaphragm layer 150. In this manufacturing process, the first electrode 121 can be used as a mask. Therefore, the fourth inclined surface L4 is formed to extend from the third inclined surface L3.

當第四傾斜表面L4如上文所描述提供於膜片層150中時，反射界面Q2可沿著第四傾斜表面L4之邊界形成。因此，由於提供另外的反射界面Q2，因此有可能進一步抑制共振器120中之能量洩漏至共振器120之外。When the fourth inclined surface L4 is provided in the diaphragm layer 150 as described above, the reflective interface Q2 may be formed along the boundary of the fourth inclined surface L4. Therefore, since an additional reflective interface Q2 is provided, it is possible to further suppress the energy in the resonator 120 from leaking out of the resonator 120.

本發明不限於上述實施例，且各種修改是可能的。The present invention is not limited to the above-mentioned embodiment, and various modifications are possible.

圖7為示意性地說明根據本發明之另一實施例的體聲學共振器之橫截面圖。Fig. 7 is a cross-sectional view schematically illustrating a bulk acoustic resonator according to another embodiment of the present invention.

參考圖7，本發明實施例中所說明之體聲波共振器200的組態方式與圖3中所說明之體聲波共振器類似且配置於第一電極121之端側上之***層170之形狀差異最大。因此，可省略對與上述實施例中之組件相同的組件之詳細描述，且將主要進一步描述差異。Referring to FIG. 7, the configuration of the bulk acoustic wave resonator 200 described in the embodiment of the present invention is similar to that of the bulk acoustic wave resonator described in FIG. 3 and the shape of the insertion layer 170 disposed on the end side of the first electrode 121 The biggest difference. Therefore, a detailed description of the same components as those in the above-mentioned embodiment may be omitted, and the differences will mainly be further described.

如圖7中所示，在共振器120的經切割以與中心部分S交叉的橫截面中，***層170分別配置於分別位於中心部分S之兩側上的延伸部分E中，其中接觸第一電極121之末端的右側***層170經組態以僅接觸第三傾斜表面L3，所述第三傾斜表面L3是第一電極121之末端的傾斜表面而不覆蓋第一電極121之上表面。例如，在形成第三傾斜表面L3之部分中，***層170形成為僅接觸第三傾斜表面L3而不接觸第一電極121之上表面。As shown in FIG. 7, in the cross-section of the resonator 120 cut to cross the central portion S, the insertion layers 170 are respectively arranged in the extension portions E respectively located on both sides of the central portion S, where the first contact The right insertion layer 170 at the end of the electrode 121 is configured to only contact the third inclined surface L3, which is the inclined surface of the end of the first electrode 121 and does not cover the upper surface of the first electrode 121. For example, in the portion where the third inclined surface L3 is formed, the insertion layer 170 is formed to contact only the third inclined surface L3 and not the upper surface of the first electrode 121.

為此目的，本發明實施例之***層170可形成為比第一電極121厚。For this purpose, the insertion layer 170 of the embodiment of the present invention may be formed to be thicker than the first electrode 121.

如在上述實施例中，本發明實施例之體聲波共振器200的第一電極121具有自***層170之第一傾斜表面L延伸的第二傾斜表面L2及形成於末端處的第三傾斜表面L3，且膜片層150具有自第三傾斜表面L3延伸的第四傾斜表面L4。另外，第二傾斜表面L2形成為具有小於第一傾斜表面L之傾斜角的傾斜角，且第四傾斜表面L4形成為具有小於第三傾斜表面L3之傾斜角的傾斜角。As in the above embodiment, the first electrode 121 of the bulk acoustic wave resonator 200 of the embodiment of the present invention has a second inclined surface L2 extending from the first inclined surface L of the insertion layer 170 and a third inclined surface formed at the end L3, and the diaphragm layer 150 has a fourth inclined surface L4 extending from the third inclined surface L3. In addition, the second inclined surface L2 is formed to have an inclination angle smaller than that of the first inclined surface L, and the fourth inclined surface L4 is formed to have an inclination angle smaller than that of the third inclined surface L3.

另外，上述右側***層170配置為使得其末端接觸第一電極121的第三傾斜表面L3及膜片層150的第四傾斜表面L4。因此，配置成接觸第一電極121之末端的右側***層170具有在末端處具有不同傾斜角的三個傾斜表面。如上文所描述，可以各種形式修改本發明之***層170。In addition, the above-mentioned right insertion layer 170 is configured such that its end contacts the third inclined surface L3 of the first electrode 121 and the fourth inclined surface L4 of the diaphragm layer 150. Therefore, the right insertion layer 170 configured to contact the end of the first electrode 121 has three inclined surfaces having different inclination angles at the ends. As described above, the insertion layer 170 of the present invention can be modified in various forms.

圖8為示意性地說明根據本發明之另一實施例的體積聲學共振器之橫截面圖。參考圖8，本發明實施例中所示之體聲波共振器300包含圖2中所示之體聲波共振器及罩蓋50。Fig. 8 is a cross-sectional view schematically illustrating a volume acoustic resonator according to another embodiment of the present invention. Referring to FIG. 8, the bulk acoustic wave resonator 300 shown in the embodiment of the present invention includes the bulk acoustic wave resonator shown in FIG. 2 and the cover 50.

提供罩蓋50以保護共振器120免受外部環境影響。The cover 50 is provided to protect the resonator 120 from the external environment.

罩蓋50可形成為具有容納共振器120之內部空間的蓋板之形式。因此，罩蓋50是以側壁51圍繞共振器120之周邊之形式接合至基板110。The cover 50 may be formed in the form of a cover plate having an internal space for accommodating the resonator 120. Therefore, the cover 50 is joined to the substrate 110 in such a way that the side wall 51 surrounds the periphery of the resonator 120.

罩蓋50可經由接合構件接合至基板110。因此，側壁51之下表面用作與基板110之接合表面。The cover 50 may be bonded to the substrate 110 via a bonding member. Therefore, the lower surface of the side wall 51 serves as a bonding surface with the substrate 110.

罩蓋50可經由晶圓級之晶圓接合形成。亦即，上面配置有多個單元基板110之基板晶圓及上面配置有多個罩蓋50之罩蓋晶圓可藉由彼此接合而一體地形成。矽（Si）可用作罩蓋的材料，但不限於此。The cover 50 can be formed by wafer-level wafer bonding. That is, the substrate wafer on which the plurality of unit substrates 110 are arranged and the cover wafer on which the plurality of cover covers 50 are arranged can be integrally formed by bonding with each other. Silicon (Si) can be used as the material of the cover, but it is not limited to this.

本發明實施例之基板110在其下表面上具有穿透基板110之多個通路孔112。另外，連接導體113a及連接導體113b形成於通路孔112中之每一者內部。The substrate 110 of the embodiment of the present invention has a plurality of via holes 112 penetrating the substrate 110 on the lower surface thereof. In addition, the connecting conductor 113a and the connecting conductor 113b are formed inside each of the via holes 112.

連接導體113a及連接導體113b可形成於通路孔112的整個內表面上，但不限於此，或可部分地形成或以完全填充通路孔112的內部空間的形式形成。The connecting conductor 113a and the connecting conductor 113b may be formed on the entire inner surface of the via hole 112, but are not limited thereto, or may be partially formed or formed in a form of completely filling the inner space of the via hole 112.

另外，連接導體113a及連接導體113b連接導體的一端連接至形成於基板110之下表面上的外部電極117，且其另一端連接至第一電極121或第二電極125。In addition, one end of the connecting conductor 113 a and the connecting conductor 113 b is connected to the external electrode 117 formed on the lower surface of the substrate 110, and the other end is connected to the first electrode 121 or the second electrode 125.

例如，根據本發明實施例的第一連接導體113a電連接第一電極121與外部電極117，且第二連接導體113b電連接第二電極125與另一外部電極117。For example, the first connecting conductor 113a according to the embodiment of the present invention electrically connects the first electrode 121 and the external electrode 117, and the second connecting conductor 113b electrically connects the second electrode 125 and the other external electrode 117.

因此，第一連接導體113a可穿透基板110及膜片層150並電連接至第一電極121，且第二連接導體113b可穿透基板110及膜片層150並電連接至第二電極125。在此情況下，第二連接導體113b可經由第二金屬層190電連接至第二電極125。Therefore, the first connecting conductor 113a can penetrate the substrate 110 and the diaphragm layer 150 and is electrically connected to the first electrode 121, and the second connection conductor 113b can penetrate the substrate 110 and the diaphragm layer 150 and is electrically connected to the second electrode 125 . In this case, the second connection conductor 113b may be electrically connected to the second electrode 125 via the second metal layer 190.

在本發明實施例中，僅說明且描述兩個通路孔112及兩個連接導體113a及113b，但本發明不限於此，且必要時，可提供更大數目個通路孔112及連接導體113a及113b。In the embodiment of the present invention, only two via holes 112 and two connecting conductors 113a and 113b are illustrated and described, but the present invention is not limited to this, and if necessary, a larger number of via holes 112 and connecting conductors 113a and 113a can be provided. 113b.

圖9為示意性地說明根據本發明之另一實施例的體聲波共振器之橫截面圖。Fig. 9 is a cross-sectional view schematically illustrating a bulk acoustic wave resonator according to another embodiment of the present invention.

參考圖9，本發明實施例中所說明之體聲波共振器400的組態方式類似於圖8中所說明之體聲波共振器，不同之處在於通路孔112與連接導體113a及連接導體113b配置成穿透罩蓋50而非基板110之差異。Referring to FIG. 9, the configuration of the bulk acoustic wave resonator 400 described in the embodiment of the present invention is similar to the bulk acoustic wave resonator described in FIG. 8, except that the via hole 112 is configured with the connecting conductor 113a and the connecting conductor 113b. It is a difference that penetrates the cover 50 instead of the substrate 110.

因此，在本發明實施例中，通路孔112與連接導體113a及連接導體113b定位於第一金屬層180及第二金屬層190上方，且連接導體113a及連接導體113b經由通路孔112分別連接至第一金屬層180及第二金屬層190。Therefore, in the embodiment of the present invention, the via hole 112 and the connecting conductor 113a and the connecting conductor 113b are positioned above the first metal layer 180 and the second metal layer 190, and the connecting conductor 113a and the connecting conductor 113b are respectively connected to the via hole 112. The first metal layer 180 and the second metal layer 190.

因此，連接導體113a及連接導體113b分別經由第一金屬層180及第二金屬層190電連接至第一電極121及第二電極125。Therefore, the connecting conductor 113a and the connecting conductor 113b are electrically connected to the first electrode 121 and the second electrode 125 via the first metal layer 180 and the second metal layer 190, respectively.

在此情況下，第一金屬層180及第二金屬層190之上表面（或接合表面）可配置於相同平面上，使得罩蓋50可牢固地接合至第一金屬層180及第二金屬層190。In this case, the upper surfaces (or bonding surfaces) of the first metal layer 180 and the second metal layer 190 can be arranged on the same plane, so that the cover 50 can be firmly bonded to the first metal layer 180 and the second metal layer 190.

在如上文所描述組態的根據本發明實施例的體聲波共振器400中，外部電極117可配置於罩蓋50之外表面之上表面（參看圖9）上。在此情況下，罩蓋50之上表面可用作安裝表面。In the bulk acoustic wave resonator 400 according to the embodiment of the present invention configured as described above, the external electrode 117 may be disposed on the upper surface of the outer surface of the cover 50 (see FIG. 9). In this case, the upper surface of the cover 50 can be used as a mounting surface.

如上文所闡述，根據本發明，由於體聲波共振器經由提供於第一電極上之傾斜表面提供另外的反射界面，因此可儘可能地抑制共振器中之能量洩漏至共振器之外，由此改良體聲波共振器之效能。As explained above, according to the present invention, since the bulk acoustic wave resonator provides an additional reflection interface through the inclined surface provided on the first electrode, it is possible to suppress the energy in the resonator from leaking out of the resonator as much as possible, thereby Improve the performance of the bulk acoustic resonator.

雖然上文已示出及描述特定實例，但在理解本發明之後將顯而易見的是，可在不脫離申請專利範圍及其等效物之精神及範疇的情況下在這些實例中進行形式及細節之各種改變。應僅以描述性意義而非出於限制性目的考慮本文中所描述的實例。應將每一實例中的特徵或態樣的描述視為適用於其他實例中的類似特徵或態樣。若以不同次序執行所描述技術，及/或若以不同方式來組合及/或用其他組件或其等效物來替換或補充所描述系統、架構、裝置或電路中的組件，則可達成合適結果。因此，本發明的範疇並非由詳細描述定義，而是由申請專利範圍以及其等效物定義，且應將屬於申請專利範圍以及其等效物的範疇內的所有變化解釋為包含於本發明中。Although specific examples have been shown and described above, it will be obvious after understanding the present invention that forms and details can be made in these examples without departing from the scope of the patent application and the spirit and scope of its equivalents. Various changes. The examples described herein should be considered in a descriptive sense only and not for restrictive purposes. The description of the features or aspects in each example shall be regarded as applicable to similar features or aspects in other examples. If the described techniques are performed in a different order, and/or if they are combined in different ways and/or replaced or supplemented with other components or their equivalents, the appropriateness can be achieved. result. Therefore, the scope of the present invention is not defined by the detailed description, but by the scope of the patent application and its equivalents, and all changes within the scope of the patent application and its equivalents should be interpreted as being included in the present invention .

50:罩蓋 51:側壁 100:體聲波共振器/聲波共振器/共振器 200、300、400:體聲波共振器 110:基板 112:通路孔 113a、113b:連接導體 115:絕緣層 117:外部電極 120:共振器 121:第一電極 123:壓電層 123a:壓電部分 123b:彎曲部分 1231:傾斜部分 1232:延伸部分 125:第二電極 125a:第二電極 127:保護層 140:犧牲層 145:蝕刻終止部分 150:膜片層 170:***層 180:第一金屬層 190:第二金屬層 A、B:部分 C:空腔 E:延伸部分 H:吸入孔 I-I'、II-II'、III-III':線 L、L1、L2、L3、L4:傾斜表面 Q1、Q2:反射界面 S:中心部分 t1、t2、t3、t4:厚度 θ、θ1 、θ2 、θ3 、θ4 :傾斜角50: cover 51: side wall 100: bulk acoustic wave resonator/acoustic wave resonator/resonator 200, 300, 400: bulk acoustic wave resonator 110: substrate 112: via holes 113a, 113b: connecting conductor 115: insulating layer 117: exterior Electrode 120: resonator 121: first electrode 123: piezoelectric layer 123a: piezoelectric portion 123b: curved portion 1231: inclined portion 1232: extension portion 125: second electrode 125a: second electrode 127: protective layer 140: sacrificial layer 145: etching termination part 150: diaphragm layer 170: insertion layer 180: first metal layer 190: second metal layer A, B: part C: cavity E: extension part H: suction hole I-I', II- II', III-III': line L, L1, L2, L3, L4: inclined surface Q1, Q2: reflective interface S: central part t1, t2, t3, t4: thickness θ, θ 1 , θ 2 , θ 3 , Θ 4 : tilt angle

圖1為根據本發明之實施例的聲波共振器之平面圖。 圖2為沿著圖1的線I-I'截取的橫截面圖。 圖3為沿著圖1的線II-II'截取的橫截面圖。 圖4為沿著圖1的線III-III'截取的橫截面圖。 圖5為圖2之一部分A的放大視圖。 圖6為圖4之一部分B的放大視圖。 圖7為示意性地說明根據本發明之另一實施例的體聲波共振器之橫截面圖。 圖8為示意性地說明根據本發明之另一實施例的體聲波共振器之橫截面圖。 圖9為示意性地說明根據本發明之另一實施例的體聲波共振器之橫截面圖。 貫穿圖式及詳細描述，相同參考編號指代相同元件。圖式可未按比例繪製，且為了清楚說明以及便利起見，可放大圖式中的元件的相對大小、比例以及描述。Fig. 1 is a plan view of an acoustic resonator according to an embodiment of the present invention. Fig. 2 is a cross-sectional view taken along line II' of Fig. 1. Fig. 3 is a cross-sectional view taken along the line II-II' of Fig. 1. Fig. 4 is a cross-sectional view taken along the line III-III' of Fig. 1. Fig. 5 is an enlarged view of part A of Fig. 2. Fig. 6 is an enlarged view of a part B of Fig. 4. FIG. 7 is a cross-sectional view schematically illustrating a bulk acoustic wave resonator according to another embodiment of the present invention. Fig. 8 is a cross-sectional view schematically illustrating a bulk acoustic wave resonator according to another embodiment of the present invention. Fig. 9 is a cross-sectional view schematically illustrating a bulk acoustic wave resonator according to another embodiment of the present invention. Throughout the drawings and detailed description, the same reference numbers refer to the same elements. The drawings may not be drawn to scale, and for clarity and convenience, the relative sizes, proportions, and descriptions of the elements in the drawings may be enlarged.

100:體聲波共振器/聲波共振器/共振器100: Bulk acoustic wave resonator/acoustic resonator/resonator

110:基板110: substrate

115:絕緣層115: insulating layer

120:共振器120: Resonator

121:第一電極121: first electrode

123:壓電層123: Piezo layer

123a:壓電部分123a: Piezoelectric part

123b:彎曲部分123b: curved part

1231:傾斜部分1231: Inclined part

1232:延伸部分1232: Extension

125:第二電極125: second electrode

127:保護層127: Protective layer

140:犧牲層140: Sacrifice Layer

145:蝕刻終止部分145: Etching termination part

150:膜片層150: diaphragm layer

170:***層170: Insert layer

180:第一金屬層180: The first metal layer

190:第二金屬層190: second metal layer

A:部分A: Part

C:空腔C: cavity

E:延伸部分E: Extension

I-I':線I-I': line

L:傾斜表面L: Inclined surface

S:中心部分S: central part

Claims (20)

一種體聲波共振器，其包括： 共振器，其包括其中第一電極、壓電層以及第二電極依序堆疊於基板上的中心部分及沿著所述中心部分之周邊配置的延伸部分；以及 ***層，其配置於所述延伸部分中之所述壓電層下方以使所述壓電層升高， 其中所述***層包括沿著面向所述中心部分之側表面形成的第一傾斜表面，且所述第一電極包括自所述***層之所述第一傾斜表面之下端延伸的第二傾斜表面。A bulk acoustic wave resonator, which includes: A resonator including a central part in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate and an extension part arranged along the periphery of the central part; and An insertion layer disposed under the piezoelectric layer in the extension portion to raise the piezoelectric layer, Wherein the insertion layer includes a first inclined surface formed along a side surface facing the central portion, and the first electrode includes a second inclined surface extending from a lower end of the first inclined surface of the insertion layer . 如請求項1之體聲波共振器，其中所述第二傾斜表面包括比所述第一傾斜表面低之傾斜角。The bulk acoustic resonator of claim 1, wherein the second inclined surface includes a lower inclination angle than the first inclined surface. 如請求項1之體聲波共振器，其中所述第一電極包括小於所述第二傾斜表面之上端部分之厚度的所述第二傾斜表面之下端部分之厚度。The bulk acoustic resonator of claim 1, wherein the first electrode includes a thickness of a lower end portion of the second inclined surface that is smaller than a thickness of an upper end portion of the second inclined surface. 如請求項1之體聲波共振器，其中所述第二傾斜表面配置於中心部分中。The bulk acoustic resonator of claim 1, wherein the second inclined surface is disposed in the central portion. 如請求項1之體聲波共振器，其中所述第一電極包括在所述中心部分中之上表面及在所述延伸部分中之上表面，所述上表面配置於彼此不同之平面上。The bulk acoustic resonator of claim 1, wherein the first electrode includes an upper surface in the central portion and an upper surface in the extension portion, and the upper surfaces are arranged on planes different from each other. 如請求項1之體聲波共振器，其更包括： 膜片層，其配置於所述第一電極及所述***層下方以支撐所述共振器；以及 空腔，其將所述共振器與所述基板分離。Such as the bulk acoustic resonator of claim 1, which further includes: A diaphragm layer, which is disposed under the first electrode and the insertion layer to support the resonator; and A cavity that separates the resonator from the substrate. 如請求項1之體聲波共振器，其中第三傾斜表面沿著所述第一電極之末端配置，以及 其中所述膜片層包括自所述第三傾斜表面之下端延伸的第四傾斜表面。The bulk acoustic resonator of claim 1, wherein the third inclined surface is arranged along the end of the first electrode, and The diaphragm layer includes a fourth inclined surface extending from the lower end of the third inclined surface. 如請求項7之體聲波共振器，其中所述第四傾斜表面包括比所述第三傾斜表面低之傾斜角。The bulk acoustic resonator of claim 7, wherein the fourth inclined surface includes a lower inclination angle than the third inclined surface. 如請求項7之體聲波共振器，其中所述***層之末端接觸所述第一電極之所述第三傾斜表面。The bulk acoustic resonator of claim 7, wherein the end of the insertion layer contacts the third inclined surface of the first electrode. 如請求項9之體聲波共振器，其中所述***層比所述第一電極厚。The bulk acoustic resonator of claim 9, wherein the insertion layer is thicker than the first electrode. 如請求項1之體聲波共振器，其更包括罩蓋，所述罩蓋將所述共振器容納於其中並接合至所述基板。The bulk acoustic resonator of claim 1, which further includes a cover for accommodating the resonator therein and bonding to the substrate. 如請求項11之體聲波共振器，其更包括： 多個通路孔，其經配置以穿透所述罩蓋；以及 多個連接導體，其配置於所述多個通路孔中以將所述第一電極及所述第二電極電連接至外部。Such as the bulk acoustic resonator of claim 11, which further includes: A plurality of via holes configured to penetrate the cover; and A plurality of connecting conductors are arranged in the plurality of via holes to electrically connect the first electrode and the second electrode to the outside. 如請求項12之體聲波共振器，其更包括接合至暴露於所述罩蓋之外表面的所述多個連接導體的外部電極。The bulk acoustic resonator of claim 12, which further includes external electrodes joined to the plurality of connecting conductors exposed on the outer surface of the cover. 如請求項12之體聲波共振器，其更包括第一金屬層及第二金屬層，所述第一金屬層及所述第二金屬層配置於所述共振器外部並分別接合至所述第一電極及所述第二電極， 其中所述多個連接導體分別經由所述第一金屬層及所述第二金屬層電連接至所述第一電極及所述第二電極。According to claim 12, the bulk acoustic wave resonator further includes a first metal layer and a second metal layer, the first metal layer and the second metal layer are disposed outside the resonator and are respectively joined to the first metal layer An electrode and the second electrode, The plurality of connecting conductors are electrically connected to the first electrode and the second electrode through the first metal layer and the second metal layer, respectively. 如請求項1之體聲波共振器，其中所述壓電層包括配置於所述第一傾斜表面上之傾斜部分上，以及 其中所述第二電極之末端配置於所述壓電層之所述傾斜部分上。The bulk acoustic resonator of claim 1, wherein the piezoelectric layer includes an inclined portion disposed on the first inclined surface, and The end of the second electrode is arranged on the inclined portion of the piezoelectric layer. 一種體聲波共振器，其包括： 共振器，其包括其中第一電極、壓電層以及第二電極依序堆疊於基板上的中心部分及沿著所述中心部分之周邊配置的延伸部分；以及 ***層，其配置於所述延伸部分中之所述壓電層下方以使所述壓電層升高， 其中所述第一電極在所述中心部分中的厚度小於在所述延伸部分中的厚度。A bulk acoustic wave resonator, which includes: A resonator including a central part in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate and an extension part arranged along the periphery of the central part; and An insertion layer disposed under the piezoelectric layer in the extension portion to raise the piezoelectric layer, The thickness of the first electrode in the central portion is smaller than the thickness in the extension portion. 一種體聲波共振器，其包括： 中心部分，其包括依序堆疊於基板上之第一電極、壓電層以及第二電極；以及 沿著所述中心部分之周邊配置的延伸部分，其包括依序堆疊於所述基板上之所述第一電極、***層、所述壓電層以及所述第二電極， 其中所述第一電極包括在所述中心部分中之第一反射界面。A bulk acoustic wave resonator, which includes: The central part includes a first electrode, a piezoelectric layer, and a second electrode stacked on the substrate in sequence; and An extension part disposed along the periphery of the central part, which includes the first electrode, the insertion layer, the piezoelectric layer, and the second electrode sequentially stacked on the substrate, Wherein the first electrode includes a first reflective interface in the central portion. 如請求項17之體聲波共振器，其中所述第一反射界面包括自所述***層之下端面向所中心部分延伸之傾斜表面。The bulk acoustic resonator of claim 17, wherein the first reflection interface includes an inclined surface extending from the lower end surface of the insertion layer toward the center portion. 如請求項17之體聲波共振器，其更包括膜片層，所述膜片層配置於所述第一電極下方以支撐所述第一電極；以及 空腔，其將所述第一電極與所述基板分離， 其中所述膜片層包括在所述延伸部分中之第二反射界面。The bulk acoustic resonator of claim 17, further comprising a diaphragm layer, the diaphragm layer being disposed under the first electrode to support the first electrode; and A cavity, which separates the first electrode from the substrate, Wherein the diaphragm layer includes a second reflective interface in the extension portion. 如請求項19之體聲波共振器，其中所述第二反射界面包括自所述第一電極之下端遠離所述中心部分延伸之傾斜表面。The bulk acoustic resonator of claim 19, wherein the second reflection interface includes an inclined surface extending away from the central portion from the lower end of the first electrode.
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TWI794053B (en) * 2021-09-13 2023-02-21 南韓商三星電機股份有限公司 Bulk acoustic resonator
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Cited By (2)

* Cited by examiner, † Cited by third party
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TWI833158B (en) * 2021-07-20 2024-02-21 南韓商三星電機股份有限公司 Acoustic resonator
TWI794053B (en) * 2021-09-13 2023-02-21 南韓商三星電機股份有限公司 Bulk acoustic resonator

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