TW202111853A - Plasma processor, wafer lifting device and lifting method thereof in which the high of the top ends of a plurality of lift pins are flush with each other, and the height of the lift pins in the reactor can be adjusted directly - Google Patents

Plasma processor, wafer lifting device and lifting method thereof in which the high of the top ends of a plurality of lift pins are flush with each other, and the height of the lift pins in the reactor can be adjusted directly Download PDF

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TW202111853A
TW202111853A TW109128060A TW109128060A TW202111853A TW 202111853 A TW202111853 A TW 202111853A TW 109128060 A TW109128060 A TW 109128060A TW 109128060 A TW109128060 A TW 109128060A TW 202111853 A TW202111853 A TW 202111853A
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height
thimble
wafer
lifting
mounting plate
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TW109128060A
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TWI771738B (en
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蘇宜龍
蔡楚洋
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大陸商中微半導體設備（上海）股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention discloses a plasma processor, a wafer lifting device and a lifting method thereof. There is a base disposed in a reaction chamber. A mounting plate is disposed under the base, and the base and the mounting plate are provided with through holes to form a guide channel. The wafer lifting device includes a lift pin assembly at least partially located in the guide channel, in which the lift pin assembly includes a lift pin and a lift-pin central shaft that drives the lift pin to move up and down and has a sealing corrugated pipe disposed on the outside; a driving assembly for driving the lift pin to move up and down in the guide channel; a height adjusting assembly including a height adjustable bracket, which is connected to the lift-pin central shaft and an adjusting screw; and a height adjustment hole provided to pass through the mounting plate for receiving a height adjusting tool to rotate the adjusting screw so as to realize the height adjustment of the height-adjustable bracket, in which the height adjusting tool can be detachably positioned in the height adjustment hole. The present invention can ensure the high of the top ends of a plurality of lift pins are flushed with each other, and the height of the lift pins above the mounting plate in the reactor can be directly adjusted to improve work efficiency.

Description

一種電漿處理器、晶片頂升裝置及其頂升方法Plasma processor, wafer lifting device and lifting method thereof

本發明涉及電漿處理，特別涉及一種電漿處理器、晶片頂升裝置及其頂升方法。The invention relates to plasma processing, in particular to a plasma processor, a wafer lifting device and a lifting method thereof.

在半導體晶片處理設備中，當晶片在傳輸腔和真空處理腔之間傳輸時，需要用頂升裝置將晶片升起或降落，以實現晶片離開靜電吸盤表面或落到機械臂的表面，從而實現與靜電吸盤脫離或為機械臂取片留出高度空間。In semiconductor wafer processing equipment, when the wafer is transferred between the transfer chamber and the vacuum processing chamber, a jacking device is required to lift or lower the wafer, so that the wafer leaves the surface of the electrostatic chuck or falls on the surface of the robotic arm. Separate from the electrostatic chuck or leave a high space for the robotic arm to pick up the film.

而在晶片與靜電吸盤的靜電吸附和脫離的過程中對晶片與靜電吸盤表面的平行度和高度有很高的要求，也就對支撐晶片的頂升裝置的高度和三根頂針的頂端形成的平面與靜電吸盤上平面的平行度有非常高的要求；同時頂升裝置需要上下移動，而非常輕薄的晶片在跟隨頂升裝置移動的過程中會因為頂升裝置移動時的輕微的抖動或運動不一致發生偏移，這同樣對於整個結構製造和安裝具有很高的精度要求；另外，頂升裝置在真空的一側是在蝕刻環境中，不能在其上下移動的過程中為高純度的環境帶來粒子。In the process of electrostatic adsorption and detachment between the wafer and the electrostatic chuck, there are high requirements for the parallelism and height of the surface of the wafer and the electrostatic chuck, which also requires the height of the lifting device supporting the wafer and the plane formed by the top of the three thimble pins. There are very high requirements for the parallelism with the plane on the electrostatic chuck; at the same time, the lifting device needs to move up and down, and the very thin wafer will follow the lifting device to move due to the slight jitter or inconsistent movement when the lifting device moves. Offset occurs, which also has high precision requirements for the manufacturing and installation of the entire structure; in addition, the lifting device is in the etching environment on the side of the vacuum, and cannot bring high purity to the environment during its up and down movement. particle.

如圖1所示，傳統的頂升裝置101透過其下方的氣缸106的氣體整體推動以進行上下移動，但是頂升裝置101的高度無法單獨調節。同時，頂升裝置101上下移動的波紋管104與其導向襯套105是分體組裝的，在實際的安裝中無法很好地保證波紋管104和導向襯套105之間的同心度，但是為了保證三個波紋管104的可移動性，波紋管104的導向端與導向襯套105之間被迫留有較大的間隙（gap），在安裝過程中難以保證三個頂針的間隙一致，也就難以保證波紋管104上部固定密封端和下部導向端的同心度，將造成頂升裝置傾斜、晃動及運動不平穩。另外，頂升裝置101傾斜後會與安裝板103和基板102上的靜電吸盤之間摩擦，且頂升裝置101與波紋管104的固定小孔之間也會產生摩擦以及脫落，這些都會成為高純度的環境中的顆粒源，形成污染物；傳統的設計依靠現有的工業製造水準難和安裝精度都難以避免這些問題。As shown in FIG. 1, the conventional jacking device 101 is pushed by the gas of the cylinder 106 below it to move up and down, but the height of the jacking device 101 cannot be adjusted individually. At the same time, the corrugated pipe 104 that moves up and down by the jacking device 101 and its guide bushing 105 are assembled separately. In actual installation, the concentricity between the corrugated pipe 104 and the guide bushing 105 cannot be well ensured, but in order to ensure Due to the mobility of the three bellows 104, a large gap (gap) is forced to be left between the guiding end of the bellows 104 and the guiding bush 105. It is difficult to ensure that the gaps of the three thimble are consistent during the installation process. It is difficult to ensure the concentricity of the upper fixed sealing end and the lower guiding end of the bellows 104, which will cause the jacking device to tilt, shake and move unevenly. In addition, after the jacking device 101 is tilted, it will rub against the electrostatic chuck on the mounting plate 103 and the base plate 102, and friction and falling off will also occur between the jacking device 101 and the fixing holes of the bellows 104, which will become high The source of particles in a pure environment forms pollutants; traditional designs rely on the existing industrial manufacturing standards and installation accuracy are difficult to avoid these problems.

基於上述可知，先前技術中的頂升裝置沒有獨立地高度調節功能，因此研發一種高度獨立可調且真空密封的晶片頂升裝置實為必要。Based on the foregoing, the prior art jacking device does not have an independent height adjustment function, so it is necessary to develop an independently adjustable and vacuum-sealed wafer jacking device.

本發明的目的在於提供一種電漿處理器、晶片頂升裝置及其頂升方法，透過高度調節組件調節和固定頂針高度，實現複數個頂針的頂端的高齊平度；調節工具穿過基座和安裝板上的開孔直至反應腔體外，則不用將整個下陰極從反應腔中拆出在外部調節，可以直接在反應器內的安裝板上方調節頂針的高度，大大提高安裝和工作效率，減少下陰極拆卸過程中帶來的各種風險；透過支架將頂針中心軸和導向襯套進行過盈配合形成一個剛性的整體，同軸度好且不受安裝影響，限制頂針中心軸僅在垂直方向移動，而不會發生傾斜，頂針不會與波紋管觸碰摩擦，也不會造成頂針與靜電吸盤發生刮擦而產生污染顆粒。The purpose of the present invention is to provide a plasma processor, a wafer lifting device and a lifting method thereof. The height of the thimble is adjusted and fixed through a height adjustment component to achieve high flushness of the top ends of a plurality of thimbles; the adjustment tool passes through the base and is installed The hole on the plate reaches the outside of the reaction chamber, so you don’t need to remove the entire lower cathode from the reaction chamber and adjust it outside. The height of the thimble can be adjusted directly above the mounting plate in the reactor, which greatly improves the installation and work efficiency and reduces Various risks brought by the cathode disassembly process; through the bracket, the center shaft of the thimble and the guide bush are interference fit to form a rigid whole, with good coaxiality and not affected by the installation, restricting the center axis of the thimble to move only in the vertical direction, and There will be no tilting, the thimble will not touch and rub with the bellows, and it will not cause the thimble and the electrostatic chuck to scrape and produce pollution particles.

為了達到上述目的，本發明透過以下技術方案實現：In order to achieve the above objectives, the present invention is achieved through the following technical solutions:

一種用於電漿處理器的晶片頂升裝置，電漿處理器包括反應腔，反應腔內設置有基座，用於支撐處理晶片，基座下方設置有安裝板，用於承載基座，基座和安裝板設置有複數個通孔以形成對應的複數個導向通道，晶片頂升裝置包含： 頂針組件，至少部分位於導向通道內，頂針組件包括升降頂針和驅動升降頂針升降的頂針中心軸，頂針中心軸外設有密封波紋管； 驅動組件，用於驅動頂針組件的升降頂針在導向通道內升降； 高度調節組件，包括高度可調支架，高度可調支架一端與頂針中心軸相連，另一端連接調節螺釘；貫穿安裝板設有高度調節孔，高度調節孔用於容納高度調節工具以對調節螺釘進行旋轉，實現對高度可調支架的高度調節，高度調節工具可拆卸地位於高度調節孔內。A wafer jacking device for a plasma processor. The plasma processor includes a reaction chamber. A susceptor is arranged in the reaction chamber to support the processing wafer. A mounting plate is arranged below the susceptor to carry the susceptor. The base and the mounting plate are provided with a plurality of through holes to form a plurality of corresponding guide channels, and the wafer lifting device includes: The thimble assembly is at least partially located in the guide channel, the thimble assembly includes a lift thimble and a thimble center shaft that drives the lift thimble to go up and down, and a sealed bellows is provided outside the thimble center shaft; The driving assembly is used to drive the lifting thimble of the thimble assembly to move up and down in the guide channel; The height adjustment component includes a height-adjustable bracket. One end of the height-adjustable bracket is connected with the center shaft of the thimble, and the other end is connected with an adjustment screw; a height adjustment hole is provided through the mounting plate, and the height adjustment hole is used to accommodate a height adjustment tool to adjust the adjustment screw. Rotate to realize the height adjustment of the height-adjustable bracket, and the height adjustment tool is detachably located in the height adjustment hole.

較佳地，高度可調支架設置在驅動組件的上方，高度可調支架透過調節螺釘與驅動組件連接。Preferably, the height-adjustable support is arranged above the drive assembly, and the height-adjustable support is connected to the drive assembly through an adjustment screw.

較佳地，高度調節工具包含調節工具芯部，高度調節工具芯部穿過高度調節孔與調節螺釘接觸，用於旋轉調節螺釘以緊固或鬆脫調節螺釘。Preferably, the height adjustment tool includes an adjustment tool core, and the height adjustment tool core passes through the height adjustment hole to contact the adjustment screw, and is used to rotate the adjustment screw to fasten or loosen the adjustment screw.

較佳地，高度調節工具進一步包含調節工具外圈，位於調節工具芯部外側，調節工具外圈用於旋轉調節螺釘外側的鎖緊螺母以緊固或鬆脫鎖緊螺母。Preferably, the height adjustment tool further includes an adjustment tool outer ring located outside the adjustment tool core, and the adjustment tool outer ring is used to rotate the lock nut on the outer side of the adjustment screw to tighten or loosen the lock nut.

較佳地，高度可調支架和驅動組件上下之間設有複數個導銷，防止高度可調支架與驅動組件發生相對滑動或傾斜。Preferably, a plurality of guide pins are arranged between the height-adjustable bracket and the driving assembly to prevent relative sliding or tilting of the height-adjustable bracket and the driving assembly.

較佳地，高度可調支架與頂針中心軸的下部固定連接；頂針中心軸的下部選取一段加工成扁平段，高度可調支架設有與扁平段相匹配的U型缺口，U型缺口的開口方向朝向扁平段一側，U型缺口插向扁平段並卡設在扁平段的外側實現固定連接。Preferably, the height-adjustable bracket is fixedly connected to the lower part of the center shaft of the thimble; the lower part of the center shaft of the thimble is selected and processed into a flat section, and the height-adjustable bracket is provided with a U-shaped notch that matches the flat section, and an opening of the U-shaped notch. The direction is toward one side of the flat section, and the U-shaped notch is inserted into the flat section and clamped on the outside of the flat section to realize a fixed connection.

較佳地，升降頂針的下部嵌設在頂針中心軸內。Preferably, the lower part of the lifting thimble is embedded in the center shaft of the thimble.

較佳地，安裝板上方設有高度校準件，選取高度校準件的一定高度的水平面與各升降頂針的目標位置進行高度比較，適應性調節對應高度可調支架的高度，並校準所有的升降頂針在同一高度；高度校準件可拆卸地位於安裝板上方。Preferably, a height calibration piece is arranged above the mounting plate, a certain height level of the height calibration piece is selected to compare the height with the target position of each lifting thimble, the height of the corresponding height adjustable bracket is adjusted adaptively, and all the lifting thimble is calibrated At the same height; the height calibration piece is detachably located above the mounting plate.

較佳地，密封波紋管外側套設有導向套筒，導向套筒和其上方的基座之間設有法蘭盤，法蘭盤位於頂針中心軸外側；導向套筒和頂針中心軸之間設有至少一個導向部件；法蘭盤和導向套筒之間，以及導向套筒和頂針中心軸外側的導向部件之間利用過盈配合形成整體，使得頂針中心軸沿垂直方向移動。Preferably, a guide sleeve is sleeved on the outer side of the sealing bellows, a flange is arranged between the guide sleeve and the base above it, and the flange is located outside the center axis of the thimble; between the guide sleeve and the center axis of the thimble At least one guide part is provided; the flange and the guide sleeve, and the guide sleeve and the guide part outside the center axis of the thimble form a whole by interference fit, so that the center axis of the thimble moves in the vertical direction.

較佳地，密封波紋管下方的部分頂針中心軸的外側連接有密封件，用以保持升降頂針上方的真空腔體與外界其他氣體的隔離密封。Preferably, a sealing member is connected to the outer side of the central axis of the part of the thimble below the sealing bellows to keep the vacuum chamber above the lifting thimble and other outside air sealed.

較佳地，導向部件為導向襯套，導向襯套為無油免潤滑軸承，其材料為塑膠、軸承青銅、石墨鑲嵌軸瓦中的任意一種或多種。Preferably, the guide component is a guide bush, and the guide bush is an oil-free and lubrication-free bearing, and its material is any one or more of plastic, bearing bronze, and graphite inlaid bushes.

較佳地，高度校準件與法蘭盤之間透過密封圈實現密封。Preferably, the height calibration element and the flange are sealed through a sealing ring.

較佳地，高度校準件和安裝板之間設有固定件，固定件的內側壓在法蘭盤的上端且外側壓在安裝板的上端，用於緊固高度校準件、法蘭盤和安裝板。Preferably, a fixing piece is provided between the height calibration piece and the mounting plate, and the inner side of the fixing piece is pressed on the upper end of the flange and the outer side is pressed on the upper end of the mounting plate to fasten the height calibrator, the flange and the installation board.

本發明進一步提供了一種採用如上文所述的晶片頂升裝置的晶片頂升方法，該方法包含以下步驟：選取高度校準件的一定高度的參考水平面與各升降頂針的目標位置比較，判斷升降頂針是否齊平；高度調節組件的高度可調支架的一端與頂針中心軸連接，高度可調支架的另一端與調節螺釘連接，當存在目標位置未與高度校準件的參考水平面平齊的待調整頂針時，利用高度校準件下方的安裝板上開設的高度調節孔內容納的調節工具來旋轉調節螺釘，帶動高度可調支架升降，進而帶動頂針中心軸升降，待調整頂針在導向通道內升降，使得各升降頂針目標位置的高度與高度校準的參考水平面平齊，所有的升降頂針被校準到在同一高度；升降頂針的高度調節過程完成後，移除調節工具和高度校準件，透過驅動組件驅動高度可調支架向上運動，帶動頂針中心軸上升以及升降頂針上升，升降頂針的頂端接觸晶片並將晶片頂起。The present invention further provides a wafer lifting method using the wafer lifting device as described above. The method includes the following steps: selecting a reference level of a certain height of the height calibration piece and comparing it with the target position of each lifting thimble, and judging the lifting thimble Whether it is flush; one end of the height-adjustable bracket of the height adjustment component is connected with the center axis of the thimble, and the other end of the height-adjustable bracket is connected with the adjustment screw. When there is a thimble to be adjusted whose target position is not flush with the reference level of the height calibration part At the same time, use the adjustment tool contained in the height adjustment hole opened on the mounting plate under the height calibration piece to rotate the adjustment screw to drive the height-adjustable bracket up and down, and then drive the center axis of the thimble to rise and fall. The thimble to be adjusted will rise and fall in the guide channel so that The height of the target position of each lifting thimble is flush with the reference horizontal plane for height calibration, and all the lifting thimble is calibrated to the same height; after the height adjustment process of the lifting thimble is completed, the adjustment tool and height calibration piece are removed, and the height is driven through the drive assembly The adjustable support moves upwards to drive the center axis of the thimble to rise and the lift thimble to rise, and the top of the lift thimble contacts the wafer and lifts the wafer.

本發明又提供了一種電漿處理器，包括反應腔，反應腔內設置有基座，用於支撐處理晶片，基座下方設置有安裝板，用於承載基座，基座和安裝板設置有複數個通孔以形成對應的複數個導向通道，用於使上文所述的晶片頂升裝置中的升降頂針在導向通道內升降，最終將晶片頂升至設定位置。The present invention also provides a plasma processor, including a reaction chamber. A susceptor is arranged in the reaction chamber to support the processing wafer. A mounting plate is arranged under the susceptor for carrying the susceptor. The susceptor and the mounting plate are provided with A plurality of through holes form a plurality of corresponding guide passages, which are used to lift the lifting thimble in the above-mentioned wafer lifting device in the guide passage, and finally lift the wafer to a set position.

與先前技術相比，本發明的有益效果為：Compared with the prior art, the beneficial effects of the present invention are:

本發明的頂針組件連接有高度調節組件，高度調節組件包含調節支架和高度調節工具，可調支架分別與頂針組件和調節螺釘連接，高度調節工具對調節螺釘進行旋轉，實現對高度可調支架的高度調節，可以調節頂針高度，從而實現複數個頂針的頂端的高齊平度，保證晶片與靜電吸盤的安全分離；The thimble assembly of the present invention is connected with a height adjustment assembly. The height adjustment assembly includes an adjustment bracket and a height adjustment tool. The adjustable brackets are respectively connected with the thimble assembly and an adjustment screw. The height adjustment tool rotates the adjustment screw to realize the adjustment of the height adjustment bracket. Height adjustment, you can adjust the height of the thimble, so as to realize the high level of the top of a plurality of thimble, and ensure the safe separation of the wafer and the electrostatic chuck;

本發明的調節工具可以在安裝板的上方對頂針的高度進行調節，透過在安裝板上設置容納調節工具的開孔，使得本發明不用將整個下陰極從反應腔中拆出在外部調節，可以在頂針組件安裝到安裝板後在安裝板上方進行調節，大大提高安裝和工作效率，減少下陰極拆卸過程中帶來的各種風險；The adjusting tool of the present invention can adjust the height of the thimble above the mounting plate. By providing an opening for accommodating the adjusting tool on the mounting plate, the present invention does not need to remove the entire lower cathode from the reaction chamber for external adjustment. After the thimble assembly is installed on the mounting plate, adjust it above the mounting plate, which greatly improves the installation and work efficiency, and reduces various risks caused by the removal of the lower cathode;

本發明的頂針中心軸的外側套設有導向襯套，且導向襯套位於支架與頂針中心軸之間，透過支架將頂針中心軸和導向襯套進行過盈配合形成一個剛性的整體，則兩者的同軸度好且不受安裝影響，頂針中心軸和導向襯套之間間隙非常小，可限制頂針中心軸僅在垂直方向移動，不發生傾斜，頂針不會與波紋管觸碰摩擦，也不會造成頂針與靜電吸盤發生刮擦而產生污染顆粒，不會給反應器中高純度的環境帶來污染顆粒。The outer side of the center shaft of the thimble of the present invention is provided with a guide bushing, and the guide bush is located between the bracket and the center shaft of the thimble. Through the bracket, the center shaft of the thimble and the guide bush are interference fit to form a rigid whole. The concentricity of the thimble is good and is not affected by the installation. The gap between the center axis of the thimble and the guide bush is very small, which can limit the center axis of the thimble to move only in the vertical direction without tilting, and the thimble will not touch and rub against the bellows. It will not cause the thimble and the electrostatic chuck to scrape and produce pollution particles, and will not bring pollution particles to the high-purity environment in the reactor.

為了使本發明實施例的目的、技術方案和優點更加清楚，下面將結合本發明實施例中的附圖，對本發明實施例中的技術方案進行清楚、完整地說明。顯而易見的是，所說明的實施例僅僅是本發明一部分實施例，而不是全部的實施例。基於本發明中的實施例，本領域具有通常知識者在沒有做出創造性勞動前提下所獲得的所有其他實施例，都屬本發明保護的範圍。In order to make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely in conjunction with the accompanying drawings in the embodiments of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work shall fall within the protection scope of the present invention.

如圖2所示，本發明的電漿處理器包含真空反應腔100，真空反應腔100包括由金屬材料製成的大致為圓柱形的反應腔側壁。反應腔側壁上方設置有氣體噴淋裝置120，氣體噴淋裝置120與氣體供應裝置110相連。氣體供應裝置110中的反應氣體經過氣體噴淋裝置120進入真空反應腔100。真空反應腔100內的下方設有用於支撐處理晶片的基座230，基座230下方設置有安裝板310，其用於承載基座230。反應腔100內設有晶片頂升裝置，晶片頂升裝置包含複數個頂針組件210。基座230和安裝板310都具有複數個通孔，安裝板310上的各通孔與基座230上對應的通孔形成豎直方向的導向通道313。各頂針組件210的至少一部分設置在對應的導向通道313內。As shown in FIG. 2, the plasma processor of the present invention includes a vacuum reaction chamber 100, and the vacuum reaction chamber 100 includes a substantially cylindrical reaction chamber side wall made of a metal material. A gas spray device 120 is arranged above the side wall of the reaction chamber, and the gas spray device 120 is connected to the gas supply device 110. The reaction gas in the gas supply device 110 enters the vacuum reaction chamber 100 through the gas spray device 120. A susceptor 230 for supporting processing wafers is provided under the vacuum reaction chamber 100, and a mounting plate 310 is provided under the susceptor 230 for supporting the susceptor 230. A wafer lifting device is provided in the reaction chamber 100, and the wafer lifting device includes a plurality of ejector pin assemblies 210. Both the base 230 and the mounting plate 310 have a plurality of through holes, and each through hole on the mounting plate 310 and a corresponding through hole on the base 230 form a vertical guide channel 313. At least a part of each thimble assembly 210 is disposed in the corresponding guide channel 313.

如圖2至圖3所示，各頂針組件210均包含頂針中心軸318和升降頂針314，升降頂針314下部嵌設在頂針中心軸318上部以實現固定連接。當頂針中心軸318向上運動時，帶動升降頂針314上升，升降頂針314的頂端會接觸晶片並將晶片頂起。晶片頂升裝置進一步包含驅動組件304，用於驅動頂針組件210的升降頂針314在導向通道313內升降。As shown in FIGS. 2 to 3, each thimble assembly 210 includes a thimble center shaft 318 and a lifting thimble 314. The lower part of the lift thimble 314 is embedded in the upper part of the thimble center shaft 318 to achieve a fixed connection. When the center axis of the ejector pin 318 moves upward, the elevator ejector pin 314 is driven to rise, and the top of the ejector pin 314 will contact the wafer and lift the wafer. The wafer lifting device further includes a driving assembly 304 for driving the lifting thimble 314 of the thimble assembly 210 to move up and down in the guide channel 313.

本發明的晶片頂升裝置進一步包含用於在蝕刻開始之前調節頂針組件210高度的高度調節組件200，以及在靜電吸盤安裝之前用於校準升降頂針314高度齊平度的高度校準件311。高度校準件311可拆卸地位於安裝板310上方，當升降頂針314高度齊平度校準完成後，將高度校準件311移除，並安裝基座230等，然後開始蝕刻工作。The wafer lifting device of the present invention further includes a height adjustment assembly 200 for adjusting the height of the ejector pin assembly 210 before the etching starts, and a height calibration member 311 for adjusting the height and flushness of the ejector pin 314 before the electrostatic chuck is installed. The height calibration piece 311 is detachably located above the mounting plate 310. After the height alignment of the lifting thimble 314 is completed, the height calibration piece 311 is removed and the base 230 is installed, and then the etching work is started.

頂針中心軸318的外側從上至下依次設有導向套管315、中間法蘭盤319和導向套筒302，與由高度校準件311以及安裝板310的通孔形成的階梯狀通道相匹配，用於支撐頂針組件210；當移除高度校準件311後，導向套管315、中間法蘭盤319和導向套筒302與基座230以及安裝板310的通孔形成的階梯狀通道相匹配。其中，導向套筒302內的中間位置設有密封波紋管301，且密封波紋管301設置在頂針中心軸318的外側。A guide sleeve 315, an intermediate flange 319, and a guide sleeve 302 are sequentially arranged on the outer side of the thimble center shaft 318 from top to bottom, which are matched with the stepped passage formed by the height calibration piece 311 and the through hole of the mounting plate 310, Used to support the thimble assembly 210; when the height calibration member 311 is removed, the guide sleeve 315, the intermediate flange 319 and the guide sleeve 302 match the stepped passage formed by the base 230 and the through hole of the mounting plate 310. Wherein, a sealing bellows 301 is provided at an intermediate position in the guide sleeve 302, and the sealing bellows 301 is provided on the outside of the center shaft 318 of the thimble.

如圖2至圖3所示，本發明的頂針組件210與高度調節組件200連接，用於調整複數個升降頂針314的頂端的齊平度，高度調節組件200包含用於調節升降頂針314頂端高度的可調支架305，可調支架305的一端與頂針中心軸318相連，另一端連接調節螺釘307。可調支架305透過調節螺釘307與驅動組件304連接，驅動組件304用於驅動可調支架305升降運動，從而可以驅動頂針中心軸318帶動升降頂針314在導向通道內313升降。在另外的實施例中，驅動組件304可以直接和頂針組件210相連接，而非透過可調支架305實現二者的連接。在本發明中，驅動組件304驅動複數個升降頂針314同時升降，高度調節組件200分別實現對各升降頂針314的獨立高度調節。其中，可調支架305和驅動組件304均位於安裝板310的下方。As shown in Figures 2 to 3, the thimble assembly 210 of the present invention is connected to the height adjustment assembly 200 for adjusting the flushness of the top ends of a plurality of elevating thimble pins 314. The height adjustment assembly 200 includes a height adjustment assembly for adjusting the height of the top ends of the elevating thimble 314. One end of the adjustable bracket 305 is connected with the center shaft 318 of the thimble, and the other end is connected with an adjustment screw 307. The adjustable bracket 305 is connected with the driving assembly 304 through the adjusting screw 307, and the driving assembly 304 is used to drive the adjustable bracket 305 to move up and down, so as to drive the thimble central shaft 318 to drive the elevating thimble 314 to move up and down in the guide channel 313. In another embodiment, the driving assembly 304 may be directly connected to the thimble assembly 210, instead of connecting the two through the adjustable bracket 305. In the present invention, the driving assembly 304 drives a plurality of lifting thimbles 314 to move up and down at the same time, and the height adjustment assembly 200 realizes the independent height adjustment of each lifting thimble 314 respectively. Wherein, the adjustable bracket 305 and the driving assembly 304 are both located below the mounting plate 310.

較佳地，頂針中心軸318下部的某一段加工成扁平段3181，可調支架305的一側設置為U型缺口3051，U型缺口3051的開口方向朝向扁平段3181一側，將U型缺口3051插向扁平段3181並卡設在扁平段3181的外側實現固定連接，便於頂針組件210和高度調節組件200的安裝配合。Preferably, a certain section of the lower part of the thimble central shaft 318 is processed into a flat section 3181, one side of the adjustable bracket 305 is set as a U-shaped notch 3051, and the opening direction of the U-shaped notch 3051 faces the side of the flat section 3181, and the U-shaped notch 3051 is inserted into the flat section 3181 and clamped on the outside of the flat section 3181 to achieve a fixed connection, which facilitates the installation and cooperation of the thimble assembly 210 and the height adjustment assembly 200.

如圖3所示，驅動組件304設置在可調支架305的下方，可調支架305上的第二側加工有第一螺紋孔，驅動組件304上對應的位置也設有與第一螺紋孔相匹配的第二螺紋孔，調節螺釘307穿過第一螺紋孔和第二螺紋孔將可調支架305與驅動組件304進行連接。同時，為防止長期使用出現可調支架305與調節螺釘307連接鬆動，則在可調支架305的上方的調節螺釘307上加裝鎖緊螺母308。As shown in Figure 3, the drive assembly 304 is arranged below the adjustable bracket 305, the second side of the adjustable bracket 305 is machined with a first threaded hole, and the corresponding position on the drive assembly 304 is also provided with a first threaded hole. With the matching second threaded hole, the adjusting screw 307 passes through the first threaded hole and the second threaded hole to connect the adjustable bracket 305 with the driving assembly 304. At the same time, in order to prevent loose connection between the adjustable bracket 305 and the adjusting screw 307 during long-term use, a lock nut 308 is added to the adjusting screw 307 above the adjustable bracket 305.

本發明為了實現可以在安裝板310上方調節升降頂針314頂端的高度，高度調節組件200進一步包含調節工具312。調節工具312穿過開設在安裝板310上的開孔（高度調節孔330），以實現對調節螺釘307的旋轉調節。In order to realize that the height of the top end of the lifting thimble 314 can be adjusted above the mounting plate 310 in the present invention, the height adjustment assembly 200 further includes an adjustment tool 312. The adjustment tool 312 passes through the opening (the height adjustment hole 330) opened on the mounting plate 310 to realize the rotation adjustment of the adjustment screw 307.

調節工具312包含調節工具外圈3121和調節工具芯部3122，調節工具外圈3121的下端與鎖緊螺母308相匹配，使得旋轉調節工具外圈3121時可以帶動鎖緊螺母308轉動，用以緊固或鬆脫鎖緊螺母308。同時，調節工具芯部3122的下端與調節螺釘307相匹配，使得旋轉調節工具芯部3122時可以帶動調節螺釘307轉動，用以緊固或鬆脫調節螺釘307，以實現可調支架305和驅動組件304的固定或鬆開作用。The adjustment tool 312 includes an adjustment tool outer ring 3121 and an adjustment tool core 3122. The lower end of the adjustment tool outer ring 3121 matches the lock nut 308, so that when the adjustment tool outer ring 3121 is rotated, the lock nut 308 can be rotated to tighten Fix or loosen the lock nut 308. At the same time, the lower end of the adjustment tool core 3122 is matched with the adjustment screw 307, so that when the adjustment tool core 3122 is rotated, the adjustment screw 307 can be driven to rotate, so as to tighten or loosen the adjustment screw 307 to realize the adjustable bracket 305 and the drive. The fixing or releasing function of the component 304.

本發明的調節螺釘307可以為兩個或兩個以上，對應地，鎖緊螺母308的數量與調節螺釘307相匹配。The adjusting screw 307 of the present invention may be two or more than two. Correspondingly, the number of the locking nut 308 matches the adjusting screw 307.

本實施例中，在可調支架305和驅動組件304上下之間設置複數個（例如兩個）導銷306，用於保證可調支架305在安裝和調節中不會與驅動組件304發生相對滑動，且不會對調節螺釘307造成阻擋，並且保證調節順暢。本發明的導銷306不僅限於本實施例中的兩個，可以進一步是其他數量。本發明對此不做限制。In this embodiment, a plurality of (for example, two) guide pins 306 are provided between the upper and lower sides of the adjustable bracket 305 and the drive assembly 304 to ensure that the adjustable bracket 305 will not slide relative to the drive assembly 304 during installation and adjustment. , And will not block the adjustment screw 307, and ensure smooth adjustment. The guide pins 306 of the present invention are not limited to two in this embodiment, and may further include other numbers. The present invention does not limit this.

本實施例中，在可調支架305和驅動組件304之間設置有穿過調節螺釘307的彈片309，以防止調節過程中由於過於鬆動出現迅速抖動或傾斜，對高度調節造成干擾。In this embodiment, an elastic piece 309 passing through the adjusting screw 307 is provided between the adjustable bracket 305 and the driving assembly 304 to prevent rapid shaking or tilting due to excessive looseness during the adjustment process, which may interfere with the height adjustment.

為了保證頂升力的均勻分佈，本發明的頂升裝置設置有複數個頂針組件210，數量為至少三個，各頂針組件210均對應一個高度調節組件200。本實施例中，頂針組件210的數量為三個，並呈等腰三角形分佈在靜電吸盤上的對應的各孔位。但是本發明的頂針組件210並不僅限於三個，分佈也不限於等腰三角形，對此不做限制。In order to ensure the uniform distribution of the lifting force, the lifting device of the present invention is provided with a plurality of thimble assemblies 210, the number is at least three, and each thimble assembly 210 corresponds to a height adjustment assembly 200. In this embodiment, the number of the thimble assembly 210 is three, and they are distributed in the corresponding holes on the electrostatic chuck in an isosceles triangle. However, the thimble assembly 210 of the present invention is not limited to three, and the distribution is not limited to an isosceles triangle, which is not limited.

如圖3所示，安裝板310上方的高度校準件311可以作為高度測量裝置，透過將各升降頂針314頂端位置與高度校準件311（將高度校準件311作為參考基準）的頂端進行比較判斷兩者是否齊平，從而判斷複數個升降頂針314高度的不一致性。當發現三個升降頂針314中存在未與高度校準件311頂端平齊的待調整的升降頂針314時，即其頂端高度比高度校準件311頂端位置低或者其高度比高度校準件311頂端位置高，則需要將該待調整的升降頂針314進行抬升或下降，使得該待調整的升降頂針314的頂端與高度校準件311頂端平齊，具體操作如下：As shown in Figure 3, the height calibration piece 311 above the mounting plate 310 can be used as a height measuring device. The top position of each lifting thimble 314 is compared with the top of the height calibration piece 311 (the height calibration piece 311 is used as a reference) to determine the two Whether they are flush or not, so as to determine the inconsistency of the height of the plurality of lifting thimble 314. When it is found that there is a lifting thimble 314 to be adjusted that is not flush with the top of the height calibration part 311 among the three lifting thimbles 314, that is, its top height is lower than the top position of the height calibration part 311 or its height is higher than the top position of the height calibration part 311 , The lifting thimble 314 to be adjusted needs to be raised or lowered so that the top of the lifting thimble 314 to be adjusted is flush with the top of the height calibration member 311. The specific operations are as follows:

將該待調整的升降頂針314對應的調節工具312穿過高度校準件311以及安裝板310上的高度調節孔330並伸入到安裝板310下方，先旋轉調節工具外圈3121來鬆開鎖緊螺母308，然後再透過旋轉調節工具芯部3122來鬆開調節螺釘307，並透過比較升降頂針314相對高度校準件311的高度位置，調整可調支架305的高度位置（例如抬高可調支架305或降低可調支架305），則可調支架305帶動頂針中心軸318上升或下降，則升降頂針314進行上升或下降，調節升降頂針314的高度，直至升降頂針314最上端與高度校準件311上平面齊平時，則透過反向旋轉調節工具芯部3122，緊固調節螺釘307，然後再反向旋轉調節工具外圈3121來緊固鎖緊螺母308，實現可調支架305和驅動組件304的固定作用，最終三個升降頂針314的高度一致，則這三個升降頂針314的頂端形成的平面與高度校準件311頂端平行。The adjustment tool 312 corresponding to the lifting thimble 314 to be adjusted passes through the height calibration piece 311 and the height adjustment hole 330 on the mounting plate 310 and extends under the mounting plate 310. First, rotate the outer ring 3121 of the adjustment tool to loosen the lock. Nut 308, then loosen the adjustment screw 307 by rotating the adjustment tool core 3122, and adjust the height position of the adjustable bracket 305 by comparing the height position of the lifting thimble 314 with respect to the height calibration piece 311 (for example, raising the adjustable bracket 305 Or lower the adjustable bracket 305), then the adjustable bracket 305 drives the thimble central axis 318 to rise or fall, and the elevating thimble 314 rises or descends, and the height of the elevating thimble 314 is adjusted until the uppermost end of the elevating thimble 314 is on the height calibration piece 311 When the plane is flush, the adjustment tool core 3122 is reversely rotated, the adjustment screw 307 is tightened, and then the outer ring 3121 of the adjustment tool is reversely rotated to tighten the lock nut 308 to realize the fixation of the adjustable bracket 305 and the drive assembly 304 As a result, the heights of the three lifting thimbles 314 are the same, and the plane formed by the top ends of the three lifting thimbles 314 is parallel to the top end of the height calibration member 311.

本發明不僅限於將高度校準件311的頂端與升降頂針314的頂端位置進行比較來判斷齊平度，可以進一步在升降頂針314上設置刻度及/或在高度校準件311上設置刻度，用以判斷複數個升降頂針314的高度齊平度。例如，將任意一個升降頂針314作為參考升降頂針314，當該參考升降頂針314的頂端位置低於高度校準件311的頂端時，此時記錄參考升降頂針314的頂端處於高度校準件311上的刻度值大小，透過抬升或降低其他的升降頂針314使得其他的升降頂針314也位於高度校準件311上的同樣刻度位置，最終複數個升降頂針314的高度一致。再例如，將任意一個升降頂針314作為參考升降頂針314，當該參考升降頂針314的頂端位置高於高度校準件311的頂端時，此時記錄高度校準件311的頂端處於參考升降頂針314上的刻度值大小，透過抬升或降低其他的升降頂針314使得高度校準件311的頂端也處於其他的升降頂針314上的同樣刻度位置，最終複數個升降頂針314的高度一致。本發明進一步包含其他類似的校準方法，在此不做贅述。The present invention is not limited to comparing the top end of the height calibration piece 311 with the top position of the lifting thimble 314 to determine the levelness. It is possible to further set a scale on the lifting thimble 314 and/or set a scale on the height calibration piece 311 to determine The height of the plurality of lifting thimble 314 is flush. For example, take any one of the lifting thimble 314 as the reference lifting thimble 314, when the top position of the reference lifting thimble 314 is lower than the top of the height calibration piece 311, at this time it is recorded that the top of the reference lifting thimble 314 is at the scale on the height calibration piece 311 By raising or lowering other lifting thimbles 314, the other lifting thimbles 314 are also located at the same scale position on the height calibration member 311, and finally the heights of the plurality of lifting thimbles 314 are the same. For another example, take any one of the lifting thimble 314 as the reference lifting thimble 314, when the top position of the reference lifting thimble 314 is higher than the top of the height calibration piece 311, at this time the top of the recording height calibration piece 311 is on the reference lifting thimble 314 The scale value is raised or lowered by raising or lowering the other lifting thimble 314 so that the top end of the height calibration member 311 is also at the same scale position on the other lifting thimble 314, and finally the height of the plurality of lifting thimble 314 is the same. The present invention further includes other similar calibration methods, which will not be repeated here.

上述調節過程完成後，移除調節工具312和高度校準件311，透過驅動力驅動驅動組件304向上運動，帶動可調支架305向上運動，進一步帶動頂針中心軸318上升，則升降頂針314上升，升降頂針314的頂端會接觸晶片並將晶片頂起。After the above adjustment process is completed, the adjustment tool 312 and the height calibration member 311 are removed, and the driving assembly 304 is driven to move upward through the driving force, which drives the adjustable bracket 305 to move upwards, and further drives the center shaft 318 of the thimble to rise, and the lift thimble 314 rises and lifts. The top of the ejector pin 314 will contact the wafer and lift the wafer.

另外，密封波紋管301下方的部分頂針中心軸318的外側連接有密封件320，用以保持升降頂針314上方的真空腔體與外界其他氣體的隔離密封作用。同時，位於密封件320下方的部分頂針中心軸318的外側套設有一個或兩個導向襯套303，且導向襯套303位於導向套筒302與頂針中心軸318之間。In addition, a sealing member 320 is connected to the outside of the part of the center shaft 318 of the thimble below the sealing bellows 301 to keep the vacuum chamber above the lifting thimble 314 and other outside air sealed. At the same time, one or two guide bushes 303 are sleeved on the outer side of the part of the thimble center shaft 318 under the seal 320, and the guide bushes 303 are located between the guide sleeve 302 and the thimble center shaft 318.

本實施例中，中間法蘭盤319和導向套筒302之間，以及導向套筒302和頂針中心軸318外側的導向襯套303之間利用過盈配合形成剛性的整體，使得頂針中心軸318和導向襯套303兩者的同軸度好且不受安裝影響。因此，頂針中心軸318和導向襯套303之間的間隙非常小，限制了頂針中心軸318僅在垂直方向移動，不發生傾斜，從而不會造成頂針組件210與靜電吸盤發生刮擦而產生污染顆粒。In this embodiment, between the intermediate flange 319 and the guide sleeve 302, and between the guide sleeve 302 and the guide bushing 303 outside the center shaft 318 of the thimble, an interference fit is used to form a rigid whole, so that the center shaft 318 of the thimble The coaxiality between the guide bushing 303 and the guide bushing 303 is good and is not affected by installation. Therefore, the gap between the thimble center shaft 318 and the guide bushing 303 is very small, which limits the thimble center shaft 318 to move only in the vertical direction without tilting, so that the thimble assembly 210 and the electrostatic chuck will not scratch and cause pollution. Particles.

本發明的導向襯套303為無油免潤滑軸承，其材料包括塑膠、軸承青銅或石墨鑲嵌軸瓦，承載能力大、耐磨性能好、使用壽命長。The guide bushing 303 of the present invention is an oil-free and lubrication-free bearing, and its materials include plastic, bearing bronze or graphite inlaid bushes, which have large bearing capacity, good wear resistance and long service life.

本實施例中，調節過程完成後，移除調節工具312和高度校準件311，並安裝用於支撐處理晶片的基座230，且中間法蘭盤319與基座230之間透過密封圈316實現密封。基座230和安裝板310之間設置有固定件317，固定件317的內側壓在中間法蘭盤319的上端且外側壓在安裝板310上端，以實現基座230、中間法蘭盤319和安裝板310之間緊固作用。In this embodiment, after the adjustment process is completed, the adjustment tool 312 and the height calibration member 311 are removed, and the base 230 for supporting the processing wafer is installed, and the intermediate flange 319 and the base 230 are realized through a sealing ring 316 seal. A fixing member 317 is arranged between the base 230 and the mounting plate 310. The inner side of the fixing member 317 is pressed on the upper end of the middle flange 319 and the outer side is pressed on the upper end of the mounting plate 310 to realize the base 230, the middle flange 319 and Fastening between the mounting plates 310.

綜上所述，本發明可以調節頂針高度，實現複數個頂針的頂端的高齊平度，保證晶片與靜電吸盤的安全分離；本發明不用將整個下陰極從反應腔中拆出在外部調節，可以在頂針組件安裝到安裝板後在安裝板上方進行調節，大大提高安裝和工作效率，減少下陰極拆卸過程中帶來的各種風險；本發明的頂針中心軸僅在垂直方向移動，不發生傾斜，頂針不會與波紋管觸碰摩擦，也不會造成頂針與靜電吸盤發生刮擦而產生污染顆粒，不會給反應器中高純度的環境帶來污染顆粒。In summary, the present invention can adjust the height of the thimble, realize the high flushness of the top ends of a plurality of thimbles, and ensure the safe separation of the wafer and the electrostatic chuck; the present invention does not need to remove the entire lower cathode from the reaction chamber and adjust it externally. After the thimble assembly is installed on the mounting plate, it is adjusted above the mounting plate, which greatly improves the installation and work efficiency and reduces various risks caused by the disassembly of the lower cathode; the center axis of the thimble of the present invention only moves in the vertical direction without tilting, and the thimble It will not touch and rub with the bellows, and will not cause the thimble and the electrostatic chuck to scrape and produce pollution particles, and will not bring pollution particles to the high-purity environment in the reactor.

儘管本發明的內容已經透過上述較佳實施例作了詳細介紹，但應當認識到上述的說明不應被認為是對本發明的限制。在本領域具有通常知識者閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的申請專利範圍來限定。Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as a limitation to the present invention. Various modifications and substitutions to the present invention will be obvious after reading the above content by those with ordinary knowledge in the field. Therefore, the scope of protection of the present invention should be limited by the scope of the attached patent application.

100:反應腔 101:頂升裝置 102:基板 103:安裝板 104:波紋管 105:導向襯套 106:氣缸 110:氣體供應裝置 120:氣體噴淋裝置 200:高度調節組件 210:頂針組件 230:基座 301:密封波紋管 302:導向套筒 303:導向襯套 304:驅動組件 305:可調支架 3051:U型缺口 306:導銷 307:調節螺釘 308:鎖緊螺母 309:彈片 310:安裝板 311:高度校準件 312:調節工具 3121:調節工具外圈 3122:調節工具芯部 313:導向通道 314:升降頂針 315:導向套管 316:密封圈 317:固定件 318:頂針中心軸 3181:扁平段 319:中間法蘭盤 330:高度調節孔100: reaction chamber 101: jacking device 102: substrate 103: mounting plate 104: bellows 105: Guide bushing 106: cylinder 110: Gas supply device 120: Gas spray device 200: height adjustment components 210: thimble assembly 230: Pedestal 301: Sealed bellows 302: Guide sleeve 303: Guide bushing 304: drive components 305: Adjustable bracket 3051: U-shaped notch 306: guide pin 307: adjustment screw 308: lock nut 309: Shrapnel 310: mounting plate 311: height calibration piece 312: Adjustment Tool 3121: Adjusting tool outer ring 3122: Adjusting tool core 313: Guiding Channel 314: Lifting thimble 315: Guide sleeve 316: Sealing ring 317: fixed parts 318: thimble center axis 3181: flat section 319: Intermediate flange 330: height adjustment hole

圖1為先前技術的高度不可獨立調節的晶片頂升裝置結構示意圖； 圖2為本發明具有高度獨立可調地晶片頂升裝置的電漿處理器結構示意圖； 圖3為本發明的高度可調和真空密封的晶片頂升裝置結構示意圖。FIG. 1 is a schematic diagram of the structure of a prior art wafer lifting device whose height cannot be adjusted independently; 2 is a schematic diagram of the structure of a plasma processor with an independently adjustable height wafer jacking device according to the present invention; Fig. 3 is a schematic diagram of the structure of the height-adjustable and vacuum-sealed wafer lifting device of the present invention.

301:密封波紋管301: Sealed bellows

302:導向套筒302: Guide sleeve

303:導向襯套303: Guide bushing

304:驅動組件304: drive components

305:可調支架305: Adjustable bracket

3051:U型缺口3051: U-shaped notch

306:導銷306: guide pin

307:調節螺釘307: adjustment screw

308:鎖緊螺母308: lock nut

309:彈片309: Shrapnel

310:安裝板310: mounting plate

311:高度校準件311: height calibration piece

312:調節工具312: Adjustment Tool

3121:調節工具外圈3121: Adjusting tool outer ring

3122:調節工具芯部3122: Adjusting tool core

313:導向通道313: Guiding Channel

314:升降頂針314: Lifting thimble

315:導向套管315: Guide sleeve

316:密封圈316: Sealing ring

317:固定件317: fixed parts

318:頂針中心軸318: thimble center axis

3181:扁平段3181: flat section

319:中間法蘭盤319: Intermediate flange

330:高度調節孔330: height adjustment hole

Claims (15)

一種用於電漿處理器的晶片頂升裝置，該電漿處理器包括一反應腔，該反應腔內設置一基座，用於支撐處理晶片，該基座下方設置一安裝板，用於承載該基座，該基座和該安裝板設置複數個通孔形成對應的複數個導向通道，其中該晶片頂升裝置包含： 一頂針組件，至少部分位於該導向通道內，該頂針組件包括一升降頂針和驅動該升降頂針升降的一頂針中心軸，該頂針中心軸外設有一密封波紋管； 一驅動組件，用於驅動該頂針組件的該升降頂針在該導向通道內升降； 一高度調節組件，包括一高度可調支架，該高度可調支架的一端與該頂針中心軸相連，另一端連接一調節螺釘；貫穿該安裝板設有一高度調節孔，該高度調節孔用於容納一高度調節工具對該調節螺釘進行旋轉，實現對該高度可調支架的高度調節，該高度調節工具可拆卸地位於該高度調節孔內。A wafer lifting device for a plasma processor, the plasma processor comprising a reaction chamber, a susceptor is arranged in the reaction chamber for supporting the processing wafer, and a mounting plate is arranged under the susceptor for carrying The base, the base and the mounting plate are provided with a plurality of through holes to form a plurality of corresponding guide channels, wherein the wafer lifting device includes: A thimble assembly, at least partially located in the guide channel, the thimble assembly includes a lift thimble and a thimble center shaft driving the lift thimble up and down, and a sealing bellows outside the thimble center shaft; A driving assembly for driving the lifting thimble of the thimble assembly to move up and down in the guide channel; A height adjustment assembly includes a height adjustment bracket, one end of the height adjustment bracket is connected with the center shaft of the thimble, and the other end is connected with an adjustment screw; a height adjustment hole is provided through the mounting plate, and the height adjustment hole is used for receiving A height adjustment tool rotates the adjustment screw to realize the height adjustment of the height adjustment bracket, and the height adjustment tool is detachably located in the height adjustment hole. 如請求項1所述的晶片頂升裝置，其中， 該高度可調支架設置在該驅動組件的上方，該高度可調支架透過該調節螺釘與該驅動組件連接。The wafer lifting device according to claim 1, wherein: The height-adjustable bracket is arranged above the driving assembly, and the height-adjustable bracket is connected with the driving assembly through the adjusting screw. 如請求項1所述的晶片頂升裝置，其中， 該高度調節工具包含一調節工具芯部，該調節工具芯部穿過該高度調節孔與該調節螺釘接觸，用於旋轉該調節螺釘以緊固或鬆脫該調節螺釘。The wafer lifting device according to claim 1, wherein: The height adjustment tool includes an adjustment tool core that passes through the height adjustment hole to contact the adjustment screw, and is used to rotate the adjustment screw to fasten or loosen the adjustment screw. 如請求項3所述的晶片頂升裝置，其中， 該高度調節工具進一步包含一調節工具外圈，位於該調節工具芯部外側，該調節工具外圈用於旋轉該調節螺釘外側的一鎖緊螺母以緊固或鬆脫該鎖緊螺母。The wafer lifting device according to claim 3, wherein: The height adjustment tool further includes an adjustment tool outer ring located on the outer side of the adjustment tool core, and the adjustment tool outer ring is used to rotate a lock nut on the outer side of the adjustment screw to tighten or loosen the lock nut. 如請求項1或請求項2所述的晶片頂升裝置，其中， 該高度可調支架和該驅動組件上下之間設有複數個導銷，防止該高度可調支架與該驅動組件發生相對滑動或傾斜。The wafer lifting device according to claim 1 or 2, wherein: A plurality of guide pins are arranged between the height-adjustable bracket and the driving assembly to prevent relative sliding or tilting of the height-adjustable bracket and the driving assembly. 如請求項1所述的晶片頂升裝置，其中， 該高度可調支架與該頂針中心軸的下部固定連接； 該頂針中心軸的下部選取一段加工成一扁平段，該高度可調支架設有與該扁平段相匹配的一U型缺口，該U型缺口的開口方向朝向該扁平段的一側，該U型缺口插向該扁平段並卡設在該扁平段的外側實現固定連接。The wafer lifting device according to claim 1, wherein: The height-adjustable bracket is fixedly connected to the lower part of the center shaft of the thimble; The lower part of the center shaft of the thimble is processed into a flat section. The height-adjustable bracket is provided with a U-shaped notch matching the flat section. The opening direction of the U-shaped notch faces one side of the flat section. The notch is inserted into the flat section and clamped on the outside of the flat section to achieve a fixed connection. 如請求項1所述的晶片頂升裝置，其中， 該升降頂針的下部嵌設在該頂針中心軸內。The wafer jacking device according to claim 1, wherein: The lower part of the lifting thimble is embedded in the central axis of the thimble. 如請求項1所述的晶片頂升裝置，其中， 該安裝板上方設有一高度校準件，選取該高度校準件的一定高度的水平面與各該升降頂針的目標位置進行高度比較，適應性調節對應的該高度可調支架的高度，校準所有的該升降頂針在同一高度；該高度校準件可拆卸地位於該安裝板上方。The wafer lifting device according to claim 1, wherein: A height calibration piece is arranged above the mounting plate. A certain height of the height calibration piece is selected to compare the height with the target position of each lifting thimble, and the height of the corresponding height adjustable bracket is adjusted adaptively, and all the lifting devices are calibrated. The thimble is at the same height; the height calibration piece is detachably located above the mounting plate. 如請求項1所述的晶片頂升裝置，其中， 該密封波紋管外側套設有一導向套筒，該導向套筒和其上方的該基座之間設有一法蘭盤，該法蘭盤位於該頂針中心軸外側； 該導向套筒和該頂針中心軸之間設有至少一導向部件； 該法蘭盤和該導向套筒，該導向套筒和該頂針中心軸外側的該導向部件之間利用過盈配合形成整體，使得該頂針中心軸沿垂直方向移動。The wafer lifting device according to claim 1, wherein: A guide sleeve is sleeved on the outer side of the sealing bellows, a flange is provided between the guide sleeve and the base above it, and the flange is located on the outer side of the center axis of the thimble; At least one guide component is provided between the guide sleeve and the center shaft of the thimble; The flange, the guide sleeve, the guide sleeve and the guide component outside the center shaft of the thimble form a whole by interference fit, so that the center axis of the thimble moves in a vertical direction. 如請求項1所述的晶片頂升裝置，其中， 該密封波紋管下方的部分該頂針中心軸的外側連接一密封件，用以保持該升降頂針上方的真空腔體與外界其他氣體的隔離密封。The wafer lifting device according to claim 1, wherein: The part below the sealing bellows is connected to the outer side of the center axis of the thimble with a sealing element for keeping the vacuum cavity above the lifting thimble and other outside air sealed. 如請求項9所述的晶片頂升裝置，其中， 該導向部件為一導向襯套，該導向襯套為無油免潤滑軸承，其材料為塑膠、軸承青銅、石墨鑲嵌軸瓦中的任意一種或多種。The wafer jacking device according to claim 9, wherein: The guide component is a guide bush, the guide bush is an oil-free and lubrication-free bearing, and its material is any one or more of plastic, bearing bronze, and graphite inlaid bushes. 如請求項9所述的晶片頂升裝置，其中， 該基座與該法蘭盤之間透過一密封圈實現密封。The wafer jacking device according to claim 9, wherein: The base and the flange are sealed through a sealing ring. 如請求項9所述的晶片頂升裝置，其中， 該基座和該安裝板之間設有一固定件，該固定件的內側壓在該法蘭盤的上端且外側壓在該安裝板的上端，用於緊固該基座、該法蘭盤和該安裝板。The wafer jacking device according to claim 9, wherein: A fixing member is provided between the base and the mounting plate, the inner side of the fixing member is pressed on the upper end of the flange and the outer side is pressed on the upper end of the mounting plate, for fastening the base, the flange and The mounting plate. 一種採用如請求項1至請求項13中的任意一項所述的晶片頂升裝置的晶片頂升方法，該方法包含以下步驟： 選取該高度校準件的一定高度的參考水平面與各該升降頂針的目標位置比較，判斷該升降頂針是否齊平； 該高度調節組件的該高度可調支架的一端與該頂針中心軸連接，該高度可調支架的另一端與該調節螺釘連接，當存在目標位置未與該高度校準件的參考水平面平齊的待調整頂針時，利用該高度校準件下方的該安裝板上開設的該高度調節孔內容納的該高度調節工具來旋轉該調節螺釘，帶動該高度可調支架升降，進而帶動該頂針中心軸升降，待調整頂針在該導向通道內升降，使得各該升降頂針目標位置的高度與該高度校準件的參考水平面平齊，所有的該升降頂針被校準到在同一高度； 該升降頂針的高度調節過程完成後，移除該高度調節工具和該高度校準件，透過該驅動組件驅動該高度可調支架向上運動，帶動該頂針中心軸上升以及該升降頂針上升，該升降頂針的頂端接觸晶片並將晶片頂起。A wafer lifting method using the wafer lifting device according to any one of claim 1 to claim 13, the method comprising the following steps: Select a certain height reference level of the height calibration piece and compare it with the target position of each lifting thimble to determine whether the lifting thimble is flush; One end of the height-adjustable bracket of the height adjustment assembly is connected with the center shaft of the thimble, and the other end of the height-adjustable bracket is connected with the adjustment screw. When there is a target position that is not flush with the reference horizontal plane of the height calibration part When adjusting the thimble, use the height adjustment tool contained in the height adjustment hole opened on the mounting plate under the height calibration piece to rotate the adjustment screw to drive the height-adjustable bracket to rise and fall, thereby driving the central axis of the thimble to rise and fall. The thimble to be adjusted is raised and lowered in the guide channel, so that the height of the target position of the lifting thimble is flush with the reference horizontal plane of the height calibration piece, and all the lifting thimble is calibrated to the same height; After the height adjustment process of the lifting thimble is completed, the height adjustment tool and the height calibration piece are removed, and the height-adjustable support is driven to move upward through the drive assembly, which drives the center axis of the thimble to rise and the lift thimble to rise, the lifting thimble The top of the chip touches the wafer and lifts it up. 一種電漿處理器，包括一反應腔，該反應腔內設置一基座，用於支撐處理晶片，該基座下方設置一安裝板，用於承載該基座，該基座和該安裝板設置複數個通孔形成對應的複數個導向通道，用於請求項1至請求項13中的任意一項所述的晶片頂升裝置中的該升降頂針在該導向通道內升降，最終將晶片頂升至設定位置。A plasma processor includes a reaction chamber in which a pedestal is arranged for supporting a processing wafer, a mounting plate is arranged under the pedestal for carrying the pedestal, and the pedestal and the mounting plate are arranged A plurality of through holes form a plurality of corresponding guide passages for the lifting thimble in the wafer lifting device according to any one of claim 1 to claim 13 to lift in the guide passage, and finally lift the wafer To the set position.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115193605A (en) * 2021-04-14 2022-10-18 高山技术株式会社 Multiple needle and method of aligning ends of multiple needles and alignment device therefor
CN116230620A (en) * 2023-05-09 2023-06-06 上海陛通半导体能源科技股份有限公司 Horizontal adjusting device of thimble mechanism
CN116254599A (en) * 2023-05-16 2023-06-13 南京原磊纳米材料有限公司 Dynamic seal deposition device for epitaxy
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4836512B2 (en) * 2005-07-29 2011-12-14 東京エレクトロン株式会社 Substrate lifting apparatus and substrate processing apparatus
CN100517631C (en) * 2006-09-22 2009-07-22 北京北方微电子基地设备工艺研究中心有限责任公司 Method for uplifting device and adjusting plane degree of lifting device
JP5188385B2 (en) * 2008-12-26 2013-04-24 株式会社日立ハイテクノロジーズ Plasma processing apparatus and method of operating plasma processing apparatus
JP5757710B2 (en) * 2009-10-27 2015-07-29 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
TWI646869B (en) * 2011-10-05 2019-01-01 美商應用材料股份有限公司 Symmetric plasma processing chamber
CN104658957B (en) * 2013-11-18 2018-03-06 北京北方华创微电子装备有限公司 Ejector pin mechanism and plasma processing device
US9960072B2 (en) * 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
KR101791787B1 (en) * 2016-05-27 2017-10-30 세메스 주식회사 Ejector pin assembly and die ejecting apparatus having the same
EP3361316A1 (en) * 2017-02-14 2018-08-15 VAT Holding AG Pneumatic pin lifting device and pneumatic lifting cylinder
CN109192696B (en) * 2018-08-10 2021-06-08 北京北方华创微电子装备有限公司 Lift needle system, vacuum reaction chamber and semiconductor processing equipment

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115193605A (en) * 2021-04-14 2022-10-18 高山技术株式会社 Multiple needle and method of aligning ends of multiple needles and alignment device therefor
CN116441119A (en) * 2023-04-04 2023-07-18 深圳市丰源升科技有限公司 Perovskite film coating equipment
CN116441119B (en) * 2023-04-04 2024-01-23 深圳市丰源升科技有限公司 Perovskite film coating equipment
CN116230620A (en) * 2023-05-09 2023-06-06 上海陛通半导体能源科技股份有限公司 Horizontal adjusting device of thimble mechanism
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