TW202110576A - Use of steam for pre-heating or cleaning of cmp components - Google Patents

Use of steam for pre-heating or cleaning of cmp components Download PDF

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TW202110576A
TW202110576A TW109117455A TW109117455A TW202110576A TW 202110576 A TW202110576 A TW 202110576A TW 109117455 A TW109117455 A TW 109117455A TW 109117455 A TW109117455 A TW 109117455A TW 202110576 A TW202110576 A TW 202110576A
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polishing pad
temperature
component
polishing
steam
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TW109117455A
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Chinese (zh)
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輝 陳
卓志忠
吳昊晟
建設 唐
海力 桑達拉拉珍
張壽松
亞歷山大約翰 費雪
保羅Ｄ 巴特菲爾德
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美商應用材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A method of temperature control for a chemical mechanical polishing system includes directing a gas that includes steam from an orifice onto the component in the polishing system while the component is spaced away from a polishing pad of the polishing system to clean the component or raise a temperature of the component to an elevated temperature. The component is moved into contact with the polishing pad, which can occur before the component returns to an ambient temperature.

Description

使用蒸氣以預熱或清潔CMP元件Use steam to preheat or clean CMP components

本揭示案係關於化學機械研磨（CMP），且更具體地係關於在CMP期間針對清潔或預熱使用蒸氣。This disclosure relates to chemical mechanical polishing (CMP), and more specifically to the use of steam for cleaning or preheating during CMP.

通常藉由在半導體晶圓上依序沉積導電性、半導電或絕緣層而在基板上形成積體電路。各種製造製程需要對基板上的層作平坦化。例如，一個製造步驟包括在非平坦表面上沉積填料層並使該填料層平坦化。對於某些應用，將填充層平坦化，直到暴露出圖案化層的頂表面。例如，可以在圖案化的絕緣層上沉積金屬層以填充絕緣層中的溝槽和孔。在平坦化之後，圖案化層的孔與溝槽中的金屬的剩餘部分形成通孔、插塞和線，以在基板上的薄膜電路之間提供導電路徑。作為另一實例，可以在圖案化的導電層上沉積介電層，然後對介電層平坦化而能夠作後續的光刻步驟。An integrated circuit is usually formed on a substrate by sequentially depositing conductive, semiconductive or insulating layers on a semiconductor wafer. Various manufacturing processes require planarization of the layers on the substrate. For example, one manufacturing step includes depositing a filler layer on an uneven surface and planarizing the filler layer. For some applications, the filling layer is planarized until the top surface of the patterned layer is exposed. For example, a metal layer can be deposited on the patterned insulating layer to fill trenches and holes in the insulating layer. After planarization, the holes of the patterned layer and the remaining part of the metal in the trenches form through holes, plugs and wires to provide conductive paths between the thin film circuits on the substrate. As another example, a dielectric layer can be deposited on the patterned conductive layer, and then the dielectric layer can be planarized to enable subsequent photolithography steps.

化學機械研磨（CMP）是一種可以接受的平坦化方法。此平坦化方法通常需要將基板安裝在承載頭上。基板的暴露表面通常抵靠旋轉研磨墊放置。承載頭在基板上提供可控制的負載，以將其推向研磨墊。通常將具有磨料顆粒的研磨漿料供應到研磨墊的表面。Chemical mechanical polishing (CMP) is an acceptable method of planarization. This planarization method usually requires mounting the substrate on the carrier head. The exposed surface of the substrate is usually placed against the rotating polishing pad. The carrier head provides a controllable load on the substrate to push it toward the polishing pad. The polishing slurry with abrasive particles is usually supplied to the surface of the polishing pad.

在一個態樣中，一種用於化學機械研磨系統的溫度控制之方法，包括以下步驟：當該研磨系統中的一部件與該研磨系統中的一研磨墊分隔開時，引導一氣體，該氣體包含從一孔口（orifice）到該研磨系統中的該部件的蒸氣，以將該部件的溫度上升到一升高的溫度，及在該部件回到周圍溫度前，移動該部件與該研磨墊接觸。In one aspect, a method for temperature control of a chemical mechanical polishing system includes the following steps: when a component in the polishing system is separated from a polishing pad in the polishing system, introducing a gas, the The gas contains vapor from an orifice to the part in the grinding system to raise the temperature of the part to an elevated temperature, and before the part returns to ambient temperature, move the part and the grinding Mat contact.

實施可以包括以下特徵中的一個或多個。Implementations can include one or more of the following features.

當該蒸氣被引導到該部件上時，可以測量該部件的溫度，以及當該部件到達目標溫度時，停止該蒸氣。可以測量該研磨墊的溫度，以及可以基於該測量到的溫度來計算該目標溫度。When the steam is directed to the part, the temperature of the part can be measured, and when the part reaches the target temperature, the steam is stopped. The temperature of the polishing pad can be measured, and the target temperature can be calculated based on the measured temperature.

可以設置計時器，以及當該計時器時間到（expiration）時，停止該蒸氣。A timer can be set, and when the timer expires, the vapor is stopped.

當放置該部件接觸該研磨墊時，該部件的溫度可以近乎等於該研磨墊的溫度。該升高的溫度可以大於該研磨墊的溫度。When the component is placed in contact with the polishing pad, the temperature of the component can be almost equal to the temperature of the polishing pad. The elevated temperature may be greater than the temperature of the polishing pad.

該氣體可以具有70至100ºC的溫度。該蒸氣可以係乾蒸氣。該氣體可以由蒸氣組成。The gas can have a temperature of 70 to 100ºC. The steam may be dry steam. The gas may consist of vapor.

可以將該部件定位成與該研磨墊分隔開，以將蒸氣引導至該處置站處的該部件上。當蒸氣被引導至該部件上時，該部件可以在處置站中旋轉。當蒸氣被引導至該部件上時，該部件可以在處置站中垂直地移動。The component can be positioned separate from the polishing pad to direct vapor onto the component at the disposal station. When vapor is directed onto the part, the part can be rotated in the disposal station. When vapor is directed onto the part, the part can move vertically in the disposal station.

該部件可以包括承載頭或待研磨的基板。該蒸氣可以被引導至在基板移送站處的該部件上。該蒸氣可以被引導至在壓板間（inter-platen）站處的該部件上。The part may include a carrier head or a substrate to be polished. The vapor can be directed to the part at the substrate transfer station. The vapor can be directed to the component at the inter-platen station.

該部件可以包括調節器盤或調節器頭。該蒸氣可以被引導至在調節器盤清潔杯（conditioner disk cleaning cup）處的該部件上。This component may include an adjuster disc or an adjuster head. The vapor can be directed to the part at the conditioner disk cleaning cup.

在另一個態樣中，一種化學機械研磨系統包括壓板、鍋爐、處置站、致動器及控制器，該壓板支撐一研磨墊，該處置站與該研磨墊分隔開，且該處置站具有複數個噴嘴，以將蒸氣從該鍋爐引導至定位於該處置站中的一主體上，該致動器將該部件從該處置站移動至接觸該研磨墊，及該控制器經配置使該處置站將該蒸氣引導至該部件上，以將該部件的溫度上升至一升高的溫度，及該控制器經配置在該部件回到周圍溫度前，使該致動器將該部件從該處置站移動至接觸該研磨墊。In another aspect, a chemical mechanical polishing system includes a pressure plate, a boiler, a treatment station, an actuator, and a controller. The pressure plate supports a polishing pad, the treatment station is separated from the polishing pad, and the treatment station has A plurality of nozzles to direct steam from the boiler to a body positioned in the treatment station, the actuator moves the part from the treatment station to contact the polishing pad, and the controller is configured to make the treatment The station directs the vapor to the part to raise the temperature of the part to an elevated temperature, and the controller is configured to cause the actuator to remove the part from the disposal before the part returns to the ambient temperature. The station moves to touch the polishing pad.

實施可以包括以下特徵中的一個或多個。Implementations can include one or more of the following features.

該部件可以包括承載頭或基板。該部件可以包括調節器頭或調節器盤。The component may include a carrier head or a substrate. This component may include an adjuster head or an adjuster disk.

在另一個態樣中，一種用於一化學機械研磨系統之清潔方法包括以下步驟：當一部件與該研磨系統中的一研磨墊分隔開時，引導一氣體，該氣體包含從一孔口到該研磨系統中的一部件上的蒸氣，以清潔該部件，及移動該部件與該研磨墊接觸。In another aspect, a cleaning method for a chemical mechanical polishing system includes the following steps: when a component is separated from a polishing pad in the polishing system, a gas is introduced, and the gas includes an orifice The vapor onto a component in the polishing system to clean the component and move the component into contact with the polishing pad.

實施可以包括以下特徵中的一個或多個。Implementations can include one or more of the following features.

可以設置計時器，以及當該計時器時間到時，停止蒸氣。You can set a timer and stop the steam when the timer expires.

該氣體可以具有70至100ºC的溫度。該氣體可以具有80至100ºC的溫度。該蒸氣可以包括乾蒸氣。該氣體可以由蒸氣組成。該氣體可以包括蒸氣與大氣的混合物。The gas can have a temperature of 70 to 100ºC. The gas can have a temperature of 80 to 100ºC. The vapor may include dry vapor. The gas may consist of vapor. The gas may include a mixture of vapor and atmosphere.

可以將該部件定位在處置站中並可以與該研磨墊分隔開，以將蒸氣引導至該處置站處的該部件上。當蒸氣被引導至該部件上時，該部件可以在處置站中旋轉。當蒸氣被引導至該部件上時，該部件可以在處置站中垂直地移動。The part can be positioned in a disposal station and can be separated from the polishing pad to direct vapor onto the part at the disposal station. When vapor is directed onto the part, the part can be rotated in the disposal station. When vapor is directed onto the part, the part can move vertically in the disposal station.

該部件可以包括承載頭或待研磨的基板。該蒸氣可以被引導至在基板移送站處的該部件上。該蒸氣可以被引導至在壓板間（inter-platen）站處的該部件上。The part may include a carrier head or a substrate to be polished. The vapor can be directed to the part at the substrate transfer station. The vapor can be directed to the component at the inter-platen station.

該部件可以包括調節器盤或調節器頭。蒸氣可以被引導至在調節器盤清潔杯處的該部件上。This component may include an adjuster disc or an adjuster head. The steam can be directed to this part at the regulator disc cleaning cup.

清潔部件的步驟包括以下步驟：去除凝結的漿料。清潔部件的步驟包括以下步驟：去除凝結的研磨碎屑。The step of cleaning the parts includes the following steps: removing the condensed slurry. The steps of cleaning the parts include the following steps: removing condensed grinding debris.

在一個態樣中，一種化學機械研磨系統包括壓板、鍋爐、處置站、致動器、控制器，該壓板支撐一研磨墊，該處置站與該研磨墊分隔開，該處置站具有複數個噴嘴，以將蒸氣從該鍋爐引導至定位於該處置站中的一主體上，該致動器將該部件從該處置站移動至接觸該研磨墊，該控制器經配置使該處置站將該蒸氣引導至該部件上，以將該部件的溫度上升至一升高的溫度，及該控制器經配置使該致動器將該部件從該處置站移動至接觸該研磨墊。In one aspect, a chemical mechanical polishing system includes a pressure plate, a boiler, a treatment station, an actuator, and a controller. The pressure plate supports a polishing pad, the treatment station is separated from the polishing pad, and the treatment station has a plurality of Nozzles to direct steam from the boiler to a body positioned in the treatment station, the actuator moves the part from the treatment station to contact the polishing pad, and the controller is configured to cause the treatment station to Steam is directed onto the part to raise the temperature of the part to an elevated temperature, and the controller is configured to cause the actuator to move the part from the disposal station to contact the polishing pad.

實施可以包括以下特徵中的一個或多個。Implementations can include one or more of the following features.

該部件可以包括承載頭或基板。The component may include a carrier head or a substrate.

該部件可以包括調節器頭或調節器盤。This component may include an adjuster head or an adjuster disk.

可能的優點可包括但不限於以下一個或多個。The possible advantages may include, but are not limited to, one or more of the following.

可以在低程度污染下，產生足夠量的蒸氣（即藉由沸騰產生的氣態H2 O）。此外，蒸氣產生器可以產生實質純氣體的蒸氣，例如，在蒸氣中具有很少懸浮的液體至沒有（little to no）懸浮的液體。這種蒸氣（也稱為乾蒸氣）可以提供H2 O的氣態形式，其與其他蒸氣替代品（如閃蒸（flash steam））相比，具有更高的能量傳遞和更低的液體含量。It can produce a sufficient amount of steam (that is, gaseous H 2 O produced by boiling) with a low degree of pollution. In addition, the vapor generator can generate vapor of a substantially pure gas, for example, a liquid with little to no suspension in the vapor. This vapor (also called dry vapor) can provide a gaseous form of H 2 O, which has higher energy transfer and lower liquid content than other vapor alternatives such as flash steam.

可以快速且有效率地清潔CMP設備的各種部件。在溶解或以其他方式從研磨系統表面去除研磨副產品、乾燥的漿料、碎屑等方面，蒸氣可以比液態水更有效率。因此，可以減少基板上的缺陷。Various parts of CMP equipment can be cleaned quickly and efficiently. Steam can be more efficient than liquid water in dissolving or otherwise removing grinding by-products, dried slurries, debris, etc. from the surface of the grinding system. Therefore, defects on the substrate can be reduced.

可以預熱CMP設備的各種部件。可以減小整個研磨墊的溫度變化，從而減小整個基板的溫度變化，從而減少晶圓內的不均勻性（WIWNU）。可以減小研磨操作期間的溫度變化。這可以改善CMP製程期間研磨的可預測性。可以減小從一個研磨操作到另一研磨操作的溫度變化。這樣可以改善晶圓間的均勻性。Various parts of the CMP equipment can be preheated. It can reduce the temperature change of the entire polishing pad, thereby reducing the temperature change of the entire substrate, thereby reducing the unevenness within the wafer (WIWNU). The temperature change during the grinding operation can be reduced. This can improve the predictability of polishing during the CMP process. The temperature change from one grinding operation to another grinding operation can be reduced. This can improve the uniformity between wafers.

在所附圖示和以下說明中描述一個或多個實施的細節。根據說明書和圖式以及專利申請範圍，其他態樣、特徵和優點將得以彰顯。The details of one or more implementations are described in the accompanying drawings and the following description. According to the specification and drawings and the scope of patent application, other aspects, features and advantages will be highlighted.

化學機械研磨藉由在基板、研磨液和研磨墊之間的介面處的機械磨蝕和化學蝕刻的組合來操作。在研磨製程期間，由於基板表面和研磨墊之間的摩擦而產生大量的熱。此外，一些製程亦包括原位墊調節步驟，在原位墊調節步驟中將調節盤（如塗有磨料鑽石顆粒的盤）壓抵在旋轉研磨墊以調節和紋理化研磨墊表面。調節製程的磨蝕也可能產生熱。例如，在典型的一分鐘銅CMP製程中，標稱下壓力為2psi、去除速率為8000Å/min，聚氨酯研磨墊的表面溫度可以升高約30˚C。Chemical mechanical polishing is performed by a combination of mechanical abrasion and chemical etching at the interface between the substrate, the polishing liquid and the polishing pad. During the polishing process, a large amount of heat is generated due to the friction between the surface of the substrate and the polishing pad. In addition, some manufacturing processes also include an in-situ pad adjustment step. In the in-situ pad adjustment step, an adjustment disk (such as a disk coated with abrasive diamond particles) is pressed against the rotating polishing pad to adjust and texture the surface of the polishing pad. The abrasion of the adjustment process may also generate heat. For example, in a typical one-minute copper CMP process, with a nominal down pressure of 2 psi and a removal rate of 8000 Å/min, the surface temperature of the polyurethane polishing pad can increase by about 30˚C.

另一方面，如果研磨墊已經藉由先前的研磨操作被加熱，則當新的基板最初降低到與研磨墊接觸時，它處於較低的溫度，因此可以用作散熱器。類似地，分配到研磨墊上的漿料可以用作散熱器。總體而言，這些影響導致研磨墊的溫度在空間上和時間上變化。On the other hand, if the polishing pad has been heated by the previous polishing operation, when the new substrate is initially lowered into contact with the polishing pad, it is at a lower temperature and can therefore be used as a heat sink. Similarly, the slurry dispensed on the polishing pad can be used as a heat sink. In general, these effects cause the temperature of the polishing pad to vary in space and time.

CMP製程中的化學相關變數（如作為參與反應的初始（initiation）和速率）和機械相關變數（如研磨墊的表面摩擦係數和黏彈性）都是高度依賴於溫度的。因此，研磨墊表面溫度的變化可能導致去除速率、研磨均勻性、侵蝕、凹陷和殘留物的變化。藉由在研磨期間更嚴格地控制研磨墊表面的溫度，可以降低溫度的變化，且可以改善如晶圓內不均勻性或晶圓到晶圓的不均勻性所測量的研磨性能。The chemically related variables (such as the initiation and rate of participation in the reaction) and mechanically related variables (such as the surface friction coefficient and viscoelasticity of the polishing pad) in the CMP process are highly dependent on temperature. Therefore, changes in the surface temperature of the polishing pad may result in changes in the removal rate, polishing uniformity, erosion, pits, and residues. By more strictly controlling the temperature of the polishing pad surface during polishing, temperature variations can be reduced, and polishing performance as measured by wafer-to-wafer non-uniformity or wafer-to-wafer non-uniformity can be improved.

此外，在CMP期間，碎屑和漿料可能積聚在CMP設備的各種部件上。如果這些研磨副產品後來從部件上脫落，它們可能會刮傷或損壞基板，而導致研磨缺陷增加。水噴流（water jets）已用於清潔CMP設備系統的各種部件。然而，施行此任務需要大量的水。In addition, during CMP, debris and slurry may accumulate on various components of the CMP equipment. If these grinding by-products later fall off the part, they may scratch or damage the substrate, leading to increased grinding defects. Water jets have been used to clean various parts of the CMP equipment system. However, performing this task requires a lot of water.

可以解決這些問題中的一個或多個問題的技術是使用蒸氣（即藉由沸騰產生的氣態H2O）清潔和/或預熱CMP設備的各種部件。例如，由於蒸氣的潛熱，可能需要較少的蒸氣來提供與熱水等量的能量。另外，可以以高速噴灑蒸氣以清潔和/或預熱部件。此外，蒸氣在溶解或去除研磨副產物方面比液態水更有效率。The technology that can solve one or more of these problems is to use steam (that is, gaseous H2O produced by boiling) to clean and/or preheat various parts of the CMP equipment. For example, due to the latent heat of steam, less steam may be required to provide the same amount of energy as hot water. In addition, steam can be sprayed at high speeds to clean and/or preheat parts. In addition, steam is more efficient than liquid water in dissolving or removing grinding by-products.

圖1是用於處理一個或多個基板的化學機械研磨設備2的平面圖。研磨設備2包括研磨平臺4，該研磨平臺至少部分地支撐並容納複數個研磨站20。例如，研磨設備可以包括四個研磨站20a、20b、20c和20d。每個研磨站20適於研磨固持在承載頭70中的基板。圖1中未繪示每個工作站的所有組件。Fig. 1 is a plan view of a chemical mechanical polishing apparatus 2 for processing one or more substrates. The grinding equipment 2 includes a grinding platform 4 that at least partially supports and accommodates a plurality of grinding stations 20. For example, the grinding equipment may include four grinding stations 20a, 20b, 20c, and 20d. Each polishing station 20 is suitable for polishing the substrate held in the carrier head 70. Not all components of each workstation are shown in Figure 1.

研磨設備2亦包括多個承載頭70，每個承載頭經配置承載基板。研磨設備2亦包括用於從承載頭裝載和卸載基板的移送站6。移送站6可以包括複數個裝載罩8（如兩個裝載罩8a、8b），其適於促進藉由移送機器人9在承載頭70與工廠介面（未圖示）或其他裝置（未圖示）之間的移送基板。裝載罩8通常藉由裝載和卸載裝載頭70來促進機器人9和每個裝載頭70之間的移送。The polishing device 2 also includes a plurality of carrying heads 70, each of which is configured to carry a substrate. The polishing equipment 2 also includes a transfer station 6 for loading and unloading substrates from the carrier head. The transfer station 6 may include a plurality of loading covers 8 (such as two loading covers 8a, 8b), which are suitable for facilitating the interface between the loading head 70 and the factory (not shown) or other devices (not shown) by the transfer robot 9 Transfer substrates between. The loading cover 8 generally facilitates the transfer between the robot 9 and each loading head 70 by loading and unloading the loading head 70.

研磨設備2的站（包括移送站6和研磨站20）可以繞平臺4的中心以實質相等的角度間隔定位。這不是必需的，但是可以為研磨設備提供良好的佔地面積。The stations of the grinding equipment 2 (including the transfer station 6 and the grinding station 20) can be positioned at substantially equal angular intervals around the center of the platform 4. This is not necessary, but can provide a good footprint for the grinding equipment.

為了研磨操作，一個承載頭70定位於每個研磨站處。兩個額外的承載頭可以定位在裝載和卸載站6中，以將研磨過的基板替換為未研磨的基板，而其他基板在研磨站20處被研磨。For the grinding operation, a carrier head 70 is positioned at each grinding station. Two additional carrier heads can be positioned in the loading and unloading station 6 to replace the polished substrates with unpolished substrates, while the other substrates are polished at the polishing station 20.

承載頭70由支撐結構固持，該支撐結構可以使每個承載頭沿著依序經過第一研磨站20a、第二研磨站20b、第三研磨站20c和第四研磨站20d的一路徑移動。這允許將每個承載頭選擇性地定位在研磨站20和裝載罩8上方。The carrying head 70 is held by a supporting structure that can move each carrying head along a path that sequentially passes through the first polishing station 20a, the second polishing station 20b, the third polishing station 20c, and the fourth polishing station 20d. This allows each carrier head to be selectively positioned above the grinding station 20 and the loading hood 8.

在一些實施中，每個承載頭70耦接至托架78，托架78安裝至支撐結構72。藉由沿著支撐結構72（如軌道）移動托架78，可以將承載頭70定位在選定的研磨站20或裝載罩8上方。或者，承載頭70可以從旋轉料架懸掛（suspended from），且旋轉料架的旋轉使所有的承載頭同時沿著圓形路徑移動。In some implementations, each carrier head 70 is coupled to a bracket 78, and the bracket 78 is mounted to the support structure 72. By moving the carriage 78 along the supporting structure 72 (such as a track), the carrier head 70 can be positioned above the selected grinding station 20 or the loading hood 8. Alternatively, the carrying head 70 may be suspended from a rotating material rack, and the rotation of the rotating material rack causes all the carrying heads to move along a circular path at the same time.

研磨設備2的每個研磨站20可以包括例如在漿料供應臂39的端部處的埠，以將諸如研磨漿料的研磨液38（見圖3A）分配到研磨墊30上。研磨設備2的每個研磨站20亦可以包括墊調節器93，以研磨研磨墊30以將研磨墊30保持在一致的研磨狀態。Each polishing station 20 of the polishing apparatus 2 may include, for example, a port at the end of the slurry supply arm 39 to distribute a polishing liquid 38 such as a polishing slurry (see FIG. 3A) onto the polishing pad 30. Each polishing station 20 of the polishing device 2 may also include a pad adjuster 93 to polish the polishing pad 30 to maintain the polishing pad 30 in a consistent polishing state.

圖3A和3B繪示化學機械研磨系統的研磨站20的實例。研磨站20包括可旋轉的盤形平臺24，研磨墊30位於該盤形平臺24上。壓板（platen）24可操作以繞軸25旋轉（見圖3B中的箭頭A）。例如，馬達22可以轉動驅動軸28以旋轉壓板24。研磨墊30可以是雙層研磨墊，其具有外研磨層34和較軟的背托層32。3A and 3B show examples of the polishing station 20 of the chemical mechanical polishing system. The grinding station 20 includes a rotatable disk-shaped platform 24 on which the polishing pad 30 is located. A platen 24 is operable to rotate about a shaft 25 (see arrow A in 3B). For example, the motor 22 can rotate the drive shaft 28 to rotate the platen 24. The polishing pad 30 may be a double-layer polishing pad, which has an outer polishing layer 34 and a softer backing layer 32.

參照圖1、3A和3B，研磨站20可以包括例如在漿料供應臂39的端部處的供應埠，以將諸如研磨漿料的研磨液38分配到研磨墊30上。Referring to FIGS. 1, 3A, and 3B, the polishing station 20 may include, for example, a supply port at the end of the slurry supply arm 39 to distribute a polishing liquid 38 such as a polishing slurry onto the polishing pad 30.

研磨站20可以包括墊調節器90，其具有調節盤92（見圖2）以保持研磨墊30的表面粗糙度。調節器盤92可以定位於臂94的端部處的調節器頭93中。臂94和調節器頭93由基部96支撐。臂94可以擺動，以將調節器頭93和調節器盤92橫向掃過（sweep）研磨墊30。清潔杯255可以位於鄰近壓板24的位置，臂94可以將調節器頭93移動至該位置。The polishing station 20 may include a pad adjuster 90 having an adjustment disc 92 (see FIG. 2) to maintain the surface roughness of the polishing pad 30. The adjuster disc 92 may be positioned in the adjuster head 93 at the end of the arm 94. The arm 94 and the adjuster head 93 are supported by the base 96. The arm 94 can swing to sweep the adjuster head 93 and the adjuster disk 92 laterally across the polishing pad 30. The cleaning cup 255 may be located adjacent to the pressure plate 24, and the arm 94 may move the adjuster head 93 to this position.

承載頭70可操作以將基板10固持抵靠研磨墊30。承載頭70自支撐結構72（如旋轉料架或軌道）懸掛，且承載頭70藉由驅動軸74連接到承載頭旋轉馬達76，使得承載頭可以繞軸71旋轉。可選地，承載頭70可以橫向擺動（oscillate），如，在旋轉料架上的滑塊上，藉由沿著軌道的運動，或藉由旋轉料架本身的旋轉擺動。The carrying head 70 is operable to hold the substrate 10 against the polishing pad 30. The carrying head 70 is suspended from a supporting structure 72 (such as a rotating material rack or a rail), and the carrying head 70 is connected to the carrying head rotation motor 76 by a drive shaft 74 so that the carrying head can rotate around the shaft 71. Optionally, the carrying head 70 can be oscillate, for example, on a slider on the rotating material rack, by movement along the track, or by the rotation of the rotating material rack itself.

承載頭70可以包括彈性膜80及複數個可加壓的腔室82，彈性膜80具有與基板10的背面接觸的基板安裝表面，複數個可加壓的腔室82將不同的壓力施加到基板10上的不同區域，如不同的徑向區域。承載頭70可以包括固持環84，以固持基板。在一些實施中，固持環84可包括與研磨墊接觸的下部塑膠部分86以及較硬材料（如金屬）的上部88。The carrier head 70 may include an elastic membrane 80 and a plurality of pressurizable chambers 82. The elastic membrane 80 has a substrate mounting surface in contact with the back surface of the substrate 10, and the plurality of pressurizable chambers 82 apply different pressures to the substrate. Different areas on 10, such as different radial areas. The carrier head 70 may include a holding ring 84 to hold the substrate. In some implementations, the holding ring 84 may include a lower plastic part 86 that is in contact with the polishing pad and an upper part 88 of a harder material (such as metal).

在操作中，平臺繞其中心軸25旋轉，且承載頭繞其中心軸71旋轉（見圖3B中的箭頭B）以及橫向地平移（見圖3B中的箭頭C）越過研磨墊30的頂表面。In operation, the platform rotates around its central axis 25, and the carrier head rotates around its central axis 71 (see arrow B in Figure 3B) and translates laterally (see arrow C in Figure 3B) across the top surface of the polishing pad 30 .

參照圖3A和3B，當承載頭70掃過研磨墊30時，承載頭70的任何暴露表面趨於被漿料覆蓋。例如，漿料可能黏附於固持環84的外直徑表面或內直徑表面。一般來說，對於任何未保持在濕潤狀態的表面，漿料將趨於凝結和/或變乾。如此一來，可以在承載頭70上形成微粒。如果這些微粒脫落，這些微粒會刮傷基板，導致研磨缺陷。3A and 3B, when the carrier head 70 sweeps over the polishing pad 30, any exposed surface of the carrier head 70 tends to be covered by the slurry. For example, the slurry may adhere to the outer diameter surface or the inner diameter surface of the retaining ring 84. Generally speaking, for any surface that is not kept in a wet state, the slurry will tend to coagulate and/or dry out. In this way, particles can be formed on the carrying head 70. If these particles fall off, these particles will scratch the substrate and cause grinding defects.

此外，漿料可能在承載頭70上結塊（cake），或者漿料中的氫氧化鈉可能在承載頭70和/或基板10的表面之一上結晶並且導致承載頭70的表面被腐蝕。結塊的漿液難以去除，且結晶的氫氧化鈉難以返回成溶液。In addition, the slurry may cake on the carrier head 70, or the sodium hydroxide in the slurry may crystallize on one of the surfaces of the carrier head 70 and/or the substrate 10 and cause the surface of the carrier head 70 to be corroded. The agglomerated slurry is difficult to remove, and the crystallized sodium hydroxide is difficult to return to solution.

調節器頭92也會發生類似的問題，例如，微粒可能在調節器頭92上形成，漿料可能會在調節器頭92上結塊，或者漿料中的氫氧化鈉可能會在調節器頭92的一個表面上結晶。The regulator head 92 also has similar problems. For example, particles may form on the regulator head 92, the slurry may agglomerate on the regulator head 92, or the sodium hydroxide in the slurry may be on the regulator head 92. 92 crystals on one surface.

一種解決方案是用液體水噴流清潔部件，如承載頭70和調節器頭92。然而，僅使用水噴流可能難以清洗部件，且可能需要大量的水。另外，與研磨墊30接觸的部件（如承載頭70、基板10和調節盤92）可以用作散熱器，其阻礙研磨墊溫度的均勻性。One solution is to clean the components, such as the carrier head 70 and the regulator head 92, with a jet of liquid water. However, it may be difficult to clean the parts using only the water jet, and a large amount of water may be required. In addition, the parts in contact with the polishing pad 30 (such as the carrier head 70, the substrate 10, and the adjustment disk 92) can be used as a heat sink, which hinders the uniformity of the temperature of the polishing pad.

為了解決這些問題，如圖2A所示，研磨設備2包括一個或多個承載頭蒸氣處置組件200。每個蒸氣處置組件200可以用於清潔和/或預加熱承載頭70和基板10。In order to solve these problems, as shown in FIG. 2A, the grinding apparatus 2 includes one or more carrier head vapor treatment assemblies 200. Each vapor treatment assembly 200 can be used to clean and/or preheat the carrier head 70 and the substrate 10.

蒸氣處置組件200可以是裝載罩8的部分，例如，裝載罩8a或8b的部分。或者或甚者，可以在位於相鄰研磨站20之間的一個或多個壓板間（inter-platen）站9處提供蒸氣處置組件200。The vapor treatment assembly 200 may be part of the loading cover 8, for example, part of the loading cover 8a or 8b. Alternatively or even more, the vapor treatment assembly 200 may be provided at one or more inter-platen stations 9 located between adjacent grinding stations 20.

裝載罩8包括在裝載/卸載製程期間固持基板10的基座204。裝載罩8亦包括殼體206，該殼體206圍繞或實質圍繞基座204。多個噴嘴225由殼體206或單獨的支撐件支撐，以將蒸氣245輸送至位於殼體206所界定的凹部208中的承載頭和/或基板。例如，噴嘴225可以定位在殼體206的一個或多個內表面上，例如，底板206a和/或側壁206b和/或凹部的頂板。噴嘴225可以經定向將蒸氣向內引導到凹部206中。可以藉由使用蒸氣產生器410產生蒸氣245，例如，鍋爐（諸如閃蒸鍋爐或傳統鍋爐）。排放口235可以允許過量的水、清潔溶液和清潔副產物通過以防止在裝載罩8中積聚。The loading cover 8 includes a base 204 that holds the substrate 10 during the loading/unloading process. The loading cover 8 also includes a housing 206 that surrounds or substantially surrounds the base 204. The plurality of nozzles 225 are supported by the housing 206 or a separate support to deliver the vapor 245 to the carrier head and/or the substrate located in the recess 208 defined by the housing 206. For example, the nozzle 225 may be positioned on one or more inner surfaces of the housing 206, for example, the bottom plate 206a and/or the side wall 206b and/or the top plate of the recess. The nozzle 225 may be oriented to direct the vapor inwardly into the recess 206. The steam 245 may be generated by using the steam generator 410, for example, a boiler (such as a flash boiler or a traditional boiler). The discharge port 235 may allow excess water, cleaning solution, and cleaning by-products to pass through to prevent accumulation in the loading cover 8.

致動器提供在殼體206和承載頭70之間的相對垂直運動。例如，軸210可以支撐殼體206且垂直可致動地以升高和降低殼體206。或者，承載頭70可以垂直移動。基座205可以與軸210同軸（on-axis）。基座204可以相對於殼體206垂直地移動。The actuator provides relative vertical movement between the housing 206 and the carrier head 70. For example, the shaft 210 may support the housing 206 and be vertically actuatable to raise and lower the housing 206. Alternatively, the carrying head 70 may move vertically. The base 205 may be on-axis with the shaft 210. The base 204 can move vertically relative to the housing 206.

在操作中，承載頭70可以定位在裝載罩8上方，且殼體206可以升高（或者承載頭70降低），使得承載頭70部分地位於凹部208內。基板10可以在基座204上開始以及被卡緊（chucked）在承載頭70上，和/或在承載頭70上開始以及被解卡緊（dechucked）在基座204上。In operation, the carrying head 70 can be positioned above the loading cover 8 and the housing 206 can be raised (or the carrying head 70 can be lowered) so that the carrying head 70 is partially located in the recess 208. The substrate 10 may start on the base 204 and be chucked on the carrier head 70, and/or start on the carrier head 70 and be dechucked on the base 204.

蒸氣被引導通過噴嘴225以清潔和/或預熱基板10和/或承載頭70的一個或多個表面。例如，一個或多個噴嘴可已經定位將蒸氣引導到承載頭70的外表面、固持環84的外表面84a和/或固持環84的底表面84b上。可以定位一個或多個噴嘴以將蒸氣引導到由承載頭70固持的基板10的前表面（即，待研磨的表面上）上，或者如果沒有基板10被支撐在承載頭70上，則將蒸氣引導到膜80的底表面上。可以將一個或多個噴嘴定位在基座204下方，以將蒸氣向上引導到定位於基座204上的基板10的前表面上。可以將一個或多個噴嘴定位在基座204上方，以將蒸氣向下引導到定位於基座204上的基板10的背表面上。承載頭70可以在裝載罩8內旋轉和/或相對於裝載罩8垂直移動，以允許噴嘴225處置承載頭70和/或基板10的不同區域。基板10可以靜置在基座205上，以允許對承載頭70的內表面作蒸氣處置，例如，膜82的底表面或固持環84的內表面。The steam is directed through the nozzle 225 to clean and/or preheat one or more surfaces of the substrate 10 and/or the carrier head 70. For example, one or more nozzles may have been positioned to direct vapor onto the outer surface of the carrier head 70, the outer surface 84a of the holding ring 84, and/or the bottom surface 84b of the holding ring 84. One or more nozzles can be positioned to direct the vapor to the front surface (ie, the surface to be polished) of the substrate 10 held by the carrier head 70, or if no substrate 10 is supported on the carrier head 70, the vapor Guide to the bottom surface of the film 80. One or more nozzles may be positioned below the susceptor 204 to direct vapor upward onto the front surface of the substrate 10 positioned on the susceptor 204. One or more nozzles may be positioned above the susceptor 204 to direct vapor downward onto the back surface of the substrate 10 positioned on the susceptor 204. The carrier head 70 can rotate within the loading hood 8 and/or move vertically relative to the loading hood 8 to allow the nozzle 225 to handle different areas of the carrier head 70 and/or the substrate 10. The substrate 10 may rest on the base 205 to allow vapor treatment of the inner surface of the carrier head 70, for example, the bottom surface of the membrane 82 or the inner surface of the holding ring 84.

蒸氣從蒸氣源通過供應管線230通過殼體206循環到噴嘴225。噴嘴225可以噴灑蒸氣245以去除在每次研磨操作之後留在承載頭70和基板10上的有機殘留物、副產物、碎屑和漿料顆粒。噴嘴225可以噴灑蒸氣245以加熱基板10和/或承載頭70。The steam is circulated from the steam source through the supply line 230 through the housing 206 to the nozzle 225. The nozzle 225 may spray steam 245 to remove organic residues, by-products, debris, and slurry particles left on the carrier head 70 and the substrate 10 after each grinding operation. The nozzle 225 may spray steam 245 to heat the substrate 10 and/or the carrier head 70.

壓板間站9可以類似地構造和操作，但是不需要具有基板支撐基座。The platen station 9 can be similarly constructed and operated, but does not need to have a substrate support base.

由噴嘴225輸送的蒸氣245可以具有可調節的溫度、壓力和流速，以改變承載頭70和基板10的清潔和預熱。在一些實施中，可以針對每個噴嘴或在噴嘴群組之間，獨立地調整溫度、壓力和/或流速。The vapor 245 delivered by the nozzle 225 may have an adjustable temperature, pressure, and flow rate to change the cleaning and preheating of the carrier head 70 and the substrate 10. In some implementations, the temperature, pressure, and/or flow rate can be adjusted independently for each nozzle or between nozzle groups.

例如，當產生蒸氣245時（例如，在蒸氣產生器410中），蒸氣245的溫度可以為90至200℃。例如，由於在輸送中的熱損失，當藉由噴嘴225分配蒸氣245時，蒸氣245的溫度可以在90至150℃之間。在一些實施中，藉由噴嘴225在70-100℃的溫度下輸送蒸氣，例如80-90℃。在一些實施中，由噴嘴所輸送的蒸氣被過度加熱（superheated），即處於高於沸點的溫度。For example, when the steam 245 is generated (for example, in the steam generator 410), the temperature of the steam 245 may be 90 to 200°C. For example, due to heat loss during transportation, when the vapor 245 is distributed through the nozzle 225, the temperature of the vapor 245 may be between 90 and 150°C. In some implementations, the nozzle 225 delivers steam at a temperature of 70-100°C, such as 80-90°C. In some implementations, the vapor delivered by the nozzle is superheated, that is, at a temperature above the boiling point.

當蒸氣245藉由噴嘴225輸送時，蒸氣245的流速可以是1-1000cc/分鐘，這取決於加熱器功率和壓力。在一些實施中，蒸氣與其他氣體混合，例如，與正常大氣或與N2 混合。或者，由噴嘴225輸送的流體是實質純水。在一些實施中，由噴嘴225輸送的蒸氣245與液態水（如霧化（aerosolized）水）混合。例如，液態水和蒸氣可以以1:1到1:10的相對流量比率（如，以sccm為單位的流速）合併。然而，如果液態水的量低，例如小於5重量百分比（wt%），例如小於3重量百分比，例如小於1重量百分比，則蒸氣將具有優異的傳熱能力。因此，在一些實施中，蒸氣是乾蒸氣，即，實質上沒有水滴。When the steam 245 is delivered by the nozzle 225, the flow rate of the steam 245 can be 1-1000 cc/min, depending on the heater power and pressure. In some implementations, the vapor is mixed with other gases, for example, with normal atmosphere or with N 2 . Alternatively, the fluid delivered by the nozzle 225 is substantially pure water. In some implementations, the vapor 245 delivered by the nozzle 225 is mixed with liquid water (such as aerosolized water). For example, liquid water and steam can be combined at a relative flow ratio of 1:1 to 1:10 (eg, flow rate in sccm). However, if the amount of liquid water is low, for example, less than 5 weight percent (wt%), for example, less than 3 weight percent, for example, less than 1 weight percent, the steam will have excellent heat transfer capability. Therefore, in some implementations, the vapor is dry vapor, that is, there are substantially no water droplets.

為了避免用熱降解（degrade）膜，可以將水與蒸氣245混合以降低溫度，例如降低到約40-50ºC。可以藉由將冷卻的水混合到蒸氣245中或者將相同或實質相同的溫度的水混合到蒸氣245中來降低蒸氣245的溫度（因為液態水比氣態水傳遞較少的能量）。In order to avoid thermal degradation (degrade) the membrane, water can be mixed with steam 245 to lower the temperature, for example to about 40-50ºC. The temperature of the vapor 245 can be lowered by mixing cooled water into the vapor 245 or mixing water of the same or substantially the same temperature into the vapor 245 (because liquid water transfers less energy than gaseous water).

在一些實施中，溫度感測器214可以安裝在蒸氣處置組件200中或附近，以偵測承載頭70和/或基板10的溫度。控制器12可以接收來自感測器214的訊號，以監控承載頭70和/或基板10的溫度。控制器12可以基於來自溫度感測器214的溫度量測來控制組件100對蒸氣的輸送。例如，控制器可以接收目標溫度值。如果控制器12偵測到溫度測量值超過目標值，則控制器12停止蒸氣流。作為另一個實例，控制器12可以降低蒸氣輸送流速和/或降低蒸氣溫度，例如以防止在清潔和/或預熱期間部件的過熱。In some implementations, the temperature sensor 214 may be installed in or near the vapor treatment assembly 200 to detect the temperature of the carrier head 70 and/or the substrate 10. The controller 12 can receive signals from the sensor 214 to monitor the temperature of the carrier head 70 and/or the substrate 10. The controller 12 may control the delivery of vapor by the assembly 100 based on the temperature measurement from the temperature sensor 214. For example, the controller can receive the target temperature value. If the controller 12 detects that the temperature measurement value exceeds the target value, the controller 12 stops the vapor flow. As another example, the controller 12 may reduce the vapor delivery flow rate and/or reduce the vapor temperature, for example, to prevent overheating of components during cleaning and/or preheating.

在一些實施中，控制器12包括計時器。在這種情況下，控制器12可以在開始輸送蒸氣時啟動，並且可以在計時器時間到時停止輸送蒸氣。可以基於經驗測試來設置計時器，以在清潔和/或預熱期間達到承載頭70和基板10的期望溫度。In some implementations, the controller 12 includes a timer. In this case, the controller 12 can be activated when the steam delivery starts, and can stop the steam delivery when the timer expires. A timer can be set based on empirical tests to reach the desired temperature of the carrier head 70 and the substrate 10 during cleaning and/or preheating.

圖2B表示包括殼體255的調節器蒸氣處置組件250。殼體255可以形成為「杯（cup）」的形式以接收調節器盤92和調節器頭93。蒸氣通過殼體255中的供應管線280循環到一個或多個噴嘴275。噴嘴275可以噴灑蒸氣295以去除在每次調節操作之後留在調節器盤92和/或調節器頭93上的研磨副產物，例如碎屑或漿料顆粒。噴嘴275可以位於殼體255中，例如，在殼體255內部的底板、側壁或頂板上。可以將一個或多個噴嘴定位以清潔墊調節器盤的底表面和/或調節器頭93的底表面、側壁和/或頂表面。可以使用蒸氣產生器410產生蒸氣295。排放口285可以允許過量的水、清潔溶液和清潔副產物通過以防止在殼體255中積聚。FIG. 2B shows the regulator vapor treatment assembly 250 including the housing 255. The housing 255 may be formed in the form of a “cup” to receive the regulator plate 92 and the regulator head 93. The steam circulates to one or more nozzles 275 through a supply line 280 in the housing 255. The nozzle 275 may spray steam 295 to remove grinding by-products, such as debris or slurry particles, left on the regulator disk 92 and/or the regulator head 93 after each conditioning operation. The nozzle 275 may be located in the housing 255, for example, on the bottom, side walls, or top plate inside the housing 255. One or more nozzles may be positioned to clean the bottom surface of the pad conditioner disc and/or the bottom surface, side walls, and/or top surface of the conditioner head 93. The steam generator 410 may be used to generate the steam 295. The discharge port 285 may allow excess water, cleaning solution, and cleaning by-products to pass through to prevent accumulation in the housing 255.

調節器頭93和調節器盤92可以至少部分地下降到殼體255中以待作蒸氣處置。當調節器盤92要恢復操作時，調節器頭93和調節盤92被從殼體255中抬起並定位在研磨墊30上以調節研磨墊30。當調節操作完成時，將調節器頭93和調節盤92從研磨墊上抬起，並擺動回到殼體杯255中，以待用於去除調節器頭93和調節器盤92上的研磨副產物。在一些實施中，殼體255是垂直可致動的，例如，安裝至垂直驅動軸260。The regulator head 93 and the regulator disc 92 can be at least partially lowered into the housing 255 for steam treatment. When the adjuster disc 92 is about to resume operation, the adjuster head 93 and the adjustment disc 92 are lifted from the housing 255 and positioned on the polishing pad 30 to adjust the polishing pad 30. When the adjustment operation is completed, lift the adjuster head 93 and the adjuster disc 92 from the polishing pad and swing back into the housing cup 255 to be used to remove the by-products on the adjuster head 93 and the adjuster disc 92 . In some implementations, the housing 255 is vertically actuatable, for example, mounted to the vertical drive shaft 260.

殼體255經定位接收墊調節器盤92和調節器頭93。調節器盤92和調節器頭93可以在殼體255內旋轉，和/或在殼體255中垂直移動，以允許噴嘴275對調節盤92和調節器頭93的各個表面作蒸氣處置。The housing 255 is positioned to receive the pad adjuster plate 92 and the adjuster head 93. The regulator disc 92 and the regulator head 93 can rotate within the housing 255 and/or move vertically in the housing 255 to allow the nozzle 275 to steam the respective surfaces of the regulator disc 92 and the regulator head 93.

由噴嘴275輸送的蒸氣295可以具有可調整的溫度、壓力和/或流速。在一些實施中，可以針對每個噴嘴或在噴嘴群組之間，獨立地調整溫度、壓力和/或流速。這允許變化並因此更有效率地清潔調節劑盤92或調節劑頭93。The vapor 295 delivered by the nozzle 275 may have an adjustable temperature, pressure, and/or flow rate. In some implementations, the temperature, pressure, and/or flow rate can be adjusted independently for each nozzle or between nozzle groups. This allows for changes and therefore more efficient cleaning of the conditioner pan 92 or conditioner head 93.

例如，當（例如，在蒸氣產生器410中）產生蒸氣295時，蒸氣295的溫度可以為90至200℃。例如，由於在輸送中的熱損失，當藉由噴嘴275分配蒸氣295時，蒸氣295的溫度可以在90至150℃之間。在一些實施中，可以藉由噴嘴275在70-100℃的溫度下輸送蒸氣，例如80-90℃。在一些實施中，由噴嘴所輸送的蒸氣被過度加熱（superheated），即處於高於沸點的溫度。For example, when the steam 295 is generated (for example, in the steam generator 410), the temperature of the steam 295 may be 90 to 200°C. For example, due to heat loss during transportation, when the vapor 295 is dispensed through the nozzle 275, the temperature of the vapor 295 may be between 90 and 150°C. In some implementations, the nozzle 275 may be used to deliver steam at a temperature of 70-100°C, such as 80-90°C. In some implementations, the vapor delivered by the nozzle is superheated, that is, at a temperature above the boiling point.

當藉由噴嘴275輸送蒸氣295時，蒸氣2945的流速可以是1-1000cc/分鐘。在一些實施中，蒸氣與其他氣體混合，例如，與正常大氣或與N2 混合。或者，由噴嘴275輸送的流體是實質純水。在一些實施中，由噴嘴275輸送的蒸氣295與液態水（如霧化水）混合。例如，液態水和蒸氣可以以1:1到1:10的相對流量比率（如，以sccm為單位的流速）合併。然而，如果液態水的量低，例如小於5重量百分比（wt%），例如小於3重量百分比，例如小於1重量百分比，則蒸氣將具有優異的傳熱能力。因此，在一些實施中，蒸氣是乾蒸氣，即，不包括水滴。When the steam 295 is delivered through the nozzle 275, the flow rate of the steam 2945 can be 1-1000 cc/min. In some implementations, the vapor is mixed with other gases, for example, with normal atmosphere or with N 2 . Alternatively, the fluid delivered by the nozzle 275 is substantially pure water. In some implementations, the vapor 295 delivered by the nozzle 275 is mixed with liquid water (such as atomized water). For example, liquid water and steam can be combined at a relative flow ratio of 1:1 to 1:10 (eg, flow rate in sccm). However, if the amount of liquid water is low, for example, less than 5 weight percent (wt%), for example, less than 3 weight percent, for example, less than 1 weight percent, the steam will have excellent heat transfer capability. Therefore, in some implementations, the vapor is dry vapor, that is, does not include water droplets.

在一些實施中，溫度感測器264可以安裝在殼體255中或其附近以偵測調節器頭93和/或調節器盤92的溫度。控制器12可以接收來自溫度感測器264的訊號以監控調節器頭93或調節器盤92的溫度，例如以偵測墊調節器盤92的溫度。控制器12可以基於來自溫度感測器264的溫度量測來控制組件250對蒸氣的輸送。例如，控制器可以接收目標溫度值。如果控制器12偵測到溫度測量值超過目標值，則控制器12停止蒸氣流。作為另一個實例，控制器12可以降低蒸氣輸送流速和/或降低蒸氣溫度，例如以防止在清潔和/或預熱期間部件的過熱。In some implementations, the temperature sensor 264 may be installed in or near the housing 255 to detect the temperature of the regulator head 93 and/or the regulator plate 92. The controller 12 can receive the signal from the temperature sensor 264 to monitor the temperature of the regulator head 93 or the regulator disk 92, for example, to detect the temperature of the pad regulator disk 92. The controller 12 may control the delivery of vapor by the assembly 250 based on the temperature measurement from the temperature sensor 264. For example, the controller can receive the target temperature value. If the controller 12 detects that the temperature measurement value exceeds the target value, the controller 12 stops the vapor flow. As another example, the controller 12 may reduce the vapor delivery flow rate and/or reduce the vapor temperature, for example, to prevent overheating of components during cleaning and/or preheating.

在一些實施中，控制器12使用計時器。在這種情況下，控制器12可以在開始輸送蒸氣時啟動時間，並且在計時器時間一到就停止輸送蒸氣。可以基於經驗測試來設置計時器，以在清潔和/或預熱期間達到調節器盤92的期望溫度，例如，以防止過熱。In some implementations, the controller 12 uses a timer. In this case, the controller 12 may start the time when the steam is started, and stop the steam as soon as the timer expires. The timer may be set based on empirical testing to reach the desired temperature of the regulator plate 92 during cleaning and/or warm-up, for example, to prevent overheating.

參照圖3A，在一些實施中，研磨站20包括溫度感測器64，以監控研磨站中的溫度或者研磨站的部件的溫度或研磨站中的部件的溫度，例如研磨墊30的溫度和/或研磨墊30上的漿料38的溫度。例如，溫度感測器64可以是紅外（IR）感測器（如IR相機），其位於研磨墊30上方且經配置測量研磨墊30和/或研磨墊上的漿料38的溫度。具體言之，溫度感測器64可以經配置測量沿著研磨墊30的半徑的多個點處的溫度，以產生徑向溫度分佈。例如，IR相機可以具有跨越研磨墊30的半徑的視野。3A, in some implementations, the polishing station 20 includes a temperature sensor 64 to monitor the temperature in the polishing station or the temperature of the components of the polishing station or the temperature of the components in the polishing station, such as the temperature of the polishing pad 30 and/ Or the temperature of the slurry 38 on the polishing pad 30. For example, the temperature sensor 64 may be an infrared (IR) sensor (such as an IR camera) located above the polishing pad 30 and configured to measure the temperature of the polishing pad 30 and/or the slurry 38 on the polishing pad. Specifically, the temperature sensor 64 may be configured to measure the temperature at multiple points along the radius of the polishing pad 30 to generate a radial temperature distribution. For example, the IR camera may have a field of view spanning the radius of the polishing pad 30.

在一些實施中，溫度感測器是接觸感測器而不是非接觸感測器。例如，溫度感測器64可以是位於壓板24上或壓板24中的熱電偶或IR溫度計。另外，溫度感測器64可以與研磨墊直接接觸。In some implementations, the temperature sensor is a contact sensor rather than a non-contact sensor. For example, the temperature sensor 64 may be a thermocouple or an IR thermometer located on or in the pressure plate 24. In addition, the temperature sensor 64 may be in direct contact with the polishing pad.

在一些實施中，多個溫度感測器可以在研磨墊30上的不同徑向位置處間隔開，以在沿著研磨墊30的半徑的多個點處提供溫度。此技術可以用於IR相機的替代或附加。In some implementations, multiple temperature sensors may be spaced apart at different radial positions on the polishing pad 30 to provide temperature at multiple points along the radius of the polishing pad 30. This technique can be used as an alternative or addition to IR cameras.

儘管為了監測研磨墊30和/或墊30上的漿料38的溫度而如圖3A所示定位，但溫度感測器64可以定位在承載頭70內，以測量基板10的溫度。溫度感測器64可以與基板10的半導體晶圓直接接觸（即，接觸感測器）。在一些實施中，多個溫度感測器包括於研磨站22中，如，以測量研磨站的溫度或研磨站中的不同部件的溫度。Although it is positioned as shown in FIG. 3A in order to monitor the temperature of the polishing pad 30 and/or the slurry 38 on the pad 30, the temperature sensor 64 may be positioned in the carrier head 70 to measure the temperature of the substrate 10. The temperature sensor 64 may be in direct contact with the semiconductor wafer of the substrate 10 (ie, a contact sensor). In some implementations, a plurality of temperature sensors are included in the polishing station 22, for example, to measure the temperature of the polishing station or the temperature of different parts in the polishing station.

研磨系統20亦包括溫度控制系統100，以控制研磨墊30和/或研磨墊上的漿料38的溫度。溫度控制系統100可以包括冷卻系統102和/或加熱系統104。冷卻系統102和加熱系統104中的至少一個以及在兩者的一些實施中，藉由將溫度控制介質（如液體、蒸氣或噴霧）輸送到研磨墊30的研磨表面36上（或輸送到已經存在於研磨墊上的研磨液上）。The polishing system 20 also includes a temperature control system 100 to control the temperature of the polishing pad 30 and/or the slurry 38 on the polishing pad. The temperature control system 100 may include a cooling system 102 and/or a heating system 104. At least one of the cooling system 102 and the heating system 104 and in some implementations of both, by delivering a temperature control medium (such as liquid, vapor, or spray) to the polishing surface 36 of the polishing pad 30 (or to the existing On the polishing liquid on the polishing pad).

對於冷卻系統102，冷卻介質可以是氣體（如，空氣）或液體（如，水）。介質可以在室溫下或低於室溫冷卻（chilled），例如在5-15ºC下冷卻。在一些實施中，冷卻系統102使用空氣和液體的噴霧，例如液體（如水）的霧化噴霧。具體言之，冷卻系統可以具有產生水的霧化噴霧之噴嘴，該水的霧化噴霧在低於室溫下被冷卻。在一些實施中，固體材料可以與氣體和/或液體混合。固體材料可以是冷卻的材料，例如冰，或者是當溶解在水中時例如藉由化學反應吸收熱的材料。For the cooling system 102, the cooling medium may be gas (eg, air) or liquid (eg, water). The medium can be chilled at or below room temperature, for example at 5-15ºC. In some implementations, the cooling system 102 uses a spray of air and liquid, such as an atomized spray of liquid (such as water). Specifically, the cooling system may have a nozzle that generates an atomized spray of water, and the atomized spray of water is cooled below room temperature. In some implementations, the solid material can be mixed with gas and/or liquid. The solid material may be a cooled material, such as ice, or a material that absorbs heat when dissolved in water, for example, by a chemical reaction.

可以藉由流過冷卻劑輸送臂中一個或多個孔（例如，可選地形成在噴嘴中的孔或槽）來輸送冷卻介質。孔可以由連接到冷卻劑源的歧管提供。The cooling medium may be conveyed by flowing through one or more holes in the coolant conveying arm (for example, holes or grooves optionally formed in the nozzle). The holes may be provided by a manifold connected to a source of coolant.

如圖3A和3B所示，示例性冷卻系統102包括臂110，該臂110在壓板24和研磨墊30上方從研磨墊的邊緣延伸到研磨墊30的中心或至少延伸接近研磨墊30的中心（例如，在研磨墊的總半徑的5％以內）。臂110可以由基部112支撐，且基部112可以與壓板24相同被支撐在相同框架40上。基部112可以包括一個或多個致動器，例如，線性致動器以升高或降低臂110和/或旋轉致動器，以使臂110在壓板24上橫向擺動。臂110經定位避免與其他硬體部件碰撞，如研磨頭70、墊調節盤92和漿料分配臂39。As shown in FIGS. 3A and 3B, the exemplary cooling system 102 includes an arm 110 that extends above the platen 24 and the polishing pad 30 from the edge of the polishing pad to the center of the polishing pad 30 or at least extends close to the center of the polishing pad 30 ( For example, within 5% of the total radius of the polishing pad). The arm 110 may be supported by the base 112, and the base 112 may be supported on the same frame 40 as the pressing plate 24. The base 112 may include one or more actuators, for example, a linear actuator to raise or lower the arm 110 and/or a rotary actuator to swing the arm 110 laterally on the pressure plate 24. The arm 110 is positioned to avoid collision with other hardware components, such as the polishing head 70, the pad adjustment disc 92, and the slurry distribution arm 39.

示例性冷卻系統102包括從臂110懸掛的多個噴嘴120。每個噴嘴120經配置將液體冷卻劑介質（例如水）噴灑到研磨墊30上。臂110可以由基座112支撐，使得噴嘴120藉由間隙126與研磨墊30分開。The exemplary cooling system 102 includes a plurality of nozzles 120 suspended from an arm 110. Each nozzle 120 is configured to spray a liquid coolant medium (such as water) onto the polishing pad 30. The arm 110 may be supported by the base 112 such that the nozzle 120 is separated from the polishing pad 30 by a gap 126.

每個噴嘴120可以經配置將噴霧（spray）122中的霧化水往研磨墊30引導。冷卻系統102可以包括液體冷卻劑介質的源130和氣體源132（見圖3B）。來自源130的液體和來自源132的氣體可以在例如臂110上或臂110中的混合腔室134中混合（見圖3A），然後引導通過噴嘴120以形成噴霧122。Each nozzle 120 may be configured to direct the atomized water in the spray 122 to the polishing pad 30. The cooling system 102 may include a source 130 of liquid coolant medium and a source 132 of gas (see FIG. 3B). The liquid from the source 130 and the gas from the source 132 may be mixed in, for example, a mixing chamber 134 on or in the arm 110 (see FIG. 3A), and then directed through the nozzle 120 to form a spray 122.

在一些實施中，可以針對每個噴嘴個別地控制製程參數，例如流量、壓力、溫度和/或液體與氣體的混合比。例如，用於每個噴嘴120的冷卻劑可以流過個別地可控的冷卻器以個別地控制噴霧的溫度。作為另一實例，可以將單獨的一對泵（其中一個泵用於氣體以及一個泵用於液體）連接到每個噴嘴，使得可以針對每個噴嘴個別地控制氣體和液體的流速、壓力和混合比。In some implementations, the process parameters, such as flow rate, pressure, temperature, and/or the mixing ratio of liquid to gas, can be individually controlled for each nozzle. For example, the coolant for each nozzle 120 may flow through an individually controllable cooler to individually control the temperature of the spray. As another example, a separate pair of pumps (one pump for gas and one pump for liquid) can be connected to each nozzle, so that the flow rate, pressure, and mixing of gas and liquid can be individually controlled for each nozzle ratio.

各種噴嘴可以噴灑到研磨墊30上的不同徑向區域124上。相鄰的徑向區域124可以重疊。在一些實施中，噴嘴120產生沿細長（elongated）區域128撞擊研磨墊30的噴霧。例如，噴嘴可以經配置以大致平坦的三角形體積的方式產生噴霧。Various nozzles can spray on different radial regions 124 on the polishing pad 30. Adjacent radial regions 124 may overlap. In some implementations, the nozzle 120 generates a spray that strikes the polishing pad 30 along an elongated area 128. For example, the nozzle may be configured to produce a spray in a generally flat triangular volume.

一個或多個細長區域128（例如細長區域128的全部）可以具有與延伸通過區域128的半徑平行的縱軸（見區域128a）。或者，噴嘴120產生錐形噴霧。One or more elongated regions 128 (eg, all of elongated regions 128) may have a longitudinal axis that is parallel to a radius extending through region 128 (see region 128a). Alternatively, the nozzle 120 produces a cone spray.

儘管圖1繪示噴霧本身重疊，但是噴嘴120可以經定向使得細長區域不重疊。例如，至少部分噴嘴120（例如所有噴嘴120）可以經定向使得細長區域128相對於穿過細長區域的半徑成一傾斜角（參見區域128b）。Although FIG. 1 illustrates that the sprays overlap themselves, the nozzle 120 may be oriented so that the elongated areas do not overlap. For example, at least a portion of the nozzles 120 (eg, all nozzles 120) may be oriented such that the elongated area 128 is at an oblique angle with respect to the radius passing through the elongated area (see area 128b).

至少部分噴嘴120可以經定向使得來自該噴嘴的噴霧的中心軸（見箭頭A）相對於研磨表面36成一傾斜角。具體言之，在，噴霧122可以從噴嘴120被引導以具有與由壓板24的旋轉引起的撞擊區域中研磨墊30的運動方向（見箭頭A）相反的方向上的一水平分量。At least part of the nozzle 120 may be oriented such that the central axis of the spray from the nozzle (see arrow A) is at an oblique angle with respect to the abrasive surface 36. Specifically, the spray 122 may be guided from the nozzle 120 to have a horizontal component in a direction opposite to the direction of movement of the polishing pad 30 (see arrow A) in the impact area caused by the rotation of the pressure plate 24.

儘管圖3A和3B將噴嘴120繪示為以均勻間隔隔開，但這不是必需的。噴嘴120可以在徑向上不均勻地分佈或角度上不均勻地分佈，或在兩者上皆不均勻地分佈。例如，噴嘴120可以沿朝向研磨墊30邊緣的徑向方向更密集地叢集。另外，儘管圖3A和3B繪示九個噴嘴，但是可以有更多或更少數量的噴嘴，例如三至二十個噴嘴。Although FIGS. 3A and 3B illustrate the nozzles 120 as being evenly spaced apart, this is not required. The nozzles 120 may be unevenly distributed in the radial direction or angularly, or unevenly distributed in both. For example, the nozzles 120 may be more densely clustered along the radial direction toward the edge of the polishing pad 30. In addition, although FIGS. 3A and 3B show nine nozzles, there may be a greater or lesser number of nozzles, such as three to twenty nozzles.

對於加熱系統104，加熱介質可以是氣體（例如，蒸氣（如來自蒸氣產生器410）或加熱的空氣）或液體（例如，加熱的水）或氣體和液體的組合。介質高於室溫，例如在40-120ºC，如在90-110ºC。介質可以是水，例如實質純的去離子水，或包含添加物或化學物質的水。在一些實施中，加熱系統104使用蒸氣噴霧。蒸氣可以包含添加物或化學物質。For the heating system 104, the heating medium may be a gas (for example, steam (such as from the steam generator 410) or heated air) or a liquid (for example, heated water) or a combination of gas and liquid. The medium is above room temperature, such as 40-120ºC, such as 90-110ºC. The medium can be water, such as substantially pure deionized water, or water containing additives or chemicals. In some implementations, the heating system 104 uses a vapor spray. The vapor may contain additives or chemicals.

可以藉由流過加熱輸送臂上的孔（例如，由一個或多個噴嘴提供的孔或槽）來輸送加熱介質。孔可以由連接到加熱介質源的歧管提供。The heating medium can be conveyed by flowing through holes in the heating conveying arm (for example, holes or grooves provided by one or more nozzles). The holes may be provided by a manifold connected to a source of heating medium.

示例性加熱系統104包括臂140，該臂140在壓板24和研磨墊30上方從研磨墊的邊緣延伸到研磨墊30的中心或至少延伸接近研磨墊30的中心（例如，在研磨墊的總半徑的5％以內）。臂140可以由基部142支撐，且基部142可以與壓板24相同被支撐在相同框架40上。基部142可以包括一個或多個致動器，例如，線性致動器以升高或降低臂140和/或旋轉致動器，以使臂140在壓板24上橫向擺動。臂140經定位避免與其他硬體部件碰撞，如研磨頭70、墊調節盤92和漿料分配臂39。The exemplary heating system 104 includes an arm 140 that extends above the platen 24 and the polishing pad 30 from the edge of the polishing pad to the center of the polishing pad 30 or at least extends close to the center of the polishing pad 30 (e.g., at the total radius of the polishing pad 30). Within 5%). The arm 140 may be supported by the base 142, and the base 142 may be supported on the same frame 40 as the pressing plate 24. The base 142 may include one or more actuators, for example, a linear actuator to raise or lower the arm 140 and/or a rotary actuator to swing the arm 140 laterally on the platen 24. The arm 140 is positioned to avoid collision with other hardware components, such as the polishing head 70, the pad adjustment disc 92, and the slurry distribution arm 39.

沿著壓板24的旋轉的方向，加熱系統104的臂140可以定位於冷卻系統110的臂110和承載頭70之間。沿著壓板24的旋轉方向，加熱系統104的臂140可以定位於冷卻系統110的臂110和漿料輸送臂39之間。例如，冷卻系統110的臂110、加熱系統104的臂140、漿料輸送臂39和承載頭70可以沿著壓板24的旋轉方向依序設置。Along the direction of rotation of the pressing plate 24, the arm 140 of the heating system 104 may be positioned between the arm 110 of the cooling system 110 and the carrying head 70. Along the rotation direction of the pressing plate 24, the arm 140 of the heating system 104 may be positioned between the arm 110 of the cooling system 110 and the slurry conveying arm 39. For example, the arm 110 of the cooling system 110, the arm 140 of the heating system 104, the slurry conveying arm 39, and the carrying head 70 may be arranged in order along the rotation direction of the pressing plate 24.

多個開口144形成在臂140的底表面中。每個開口144經配置將氣體或氣化物（vapor）（例如蒸氣（steam））引導到研磨墊30上。臂140可以由基部142支撐，使得開口144與研磨墊30隔開一間隙。間隙可以為0.5至5毫米。具體言之，可以選擇間隙，使得加熱流體的熱在流體到達研磨墊之前不會顯著消散。例如，可以選擇間隙，使得從開口排放的蒸氣在到達研磨墊之前不會冷凝。A plurality of openings 144 are formed in the bottom surface of the arm 140. Each opening 144 is configured to direct gas or vapor (eg, steam) onto the polishing pad 30. The arm 140 may be supported by the base 142 such that the opening 144 is separated from the polishing pad 30 by a gap. The gap can be 0.5 to 5 mm. Specifically, the gap can be selected so that the heat of the heating fluid will not be significantly dissipated before the fluid reaches the polishing pad. For example, the gap can be selected so that the vapor discharged from the opening does not condense before reaching the polishing pad.

加熱系統104可以包括蒸氣的源148（如蒸氣產生器410），其可以藉由管道連接到臂140。每個開口144可以經配置將蒸氣引導向研磨墊30。The heating system 104 may include a source 148 of steam (such as a steam generator 410), which may be connected to the arm 140 by a pipe. Each opening 144 may be configured to direct vapor toward the polishing pad 30.

在一些實施中，可以針對每個噴嘴個別地控制製程參數，例如流量、壓力、溫度和/或液體與氣體的混合比。例如，用於每個開口144的流體可以流過個別可控的加熱器，以個別地控制加熱流體的溫度，例如蒸氣的溫度。In some implementations, the process parameters, such as flow rate, pressure, temperature, and/or the mixing ratio of liquid to gas, can be individually controlled for each nozzle. For example, the fluid used for each opening 144 may flow through individual controllable heaters to individually control the temperature of the heated fluid, such as the temperature of the vapor.

各種開口144可以將蒸氣引導到研磨墊30上的不同徑向區域上。相鄰的徑向區域可以重疊。可選地，部分開口144可以經定向使得來自該開口的噴霧的中心軸相對於研磨表面36成一傾斜角。蒸氣可以從一個或多個開口144被引導，以具有與由壓板24的旋轉引起的撞擊區域中研磨墊30的運動方向相反的方向上的一水平分量。Various openings 144 can guide vapor to different radial regions on the polishing pad 30. Adjacent radial regions can overlap. Optionally, part of the opening 144 may be oriented such that the central axis of the spray from the opening is at an oblique angle with respect to the abrasive surface 36. The vapor may be guided from one or more openings 144 to have a horizontal component in a direction opposite to the direction of movement of the polishing pad 30 in the impact area caused by the rotation of the pressure plate 24.

儘管圖3B繪示以均勻間隔隔開的開口144，但這不是必需的。噴嘴120可以在徑向上不均勻地分佈或角度上不均勻地分佈，或在兩者上皆不均勻地分佈。例如，開口144可以朝研磨墊30的中心更密集地叢集。作為另一實例，開口144可以在一半徑處更密集地叢集，該半徑對應於由漿料輸送臂39將研磨液39輸送到研磨墊30所在的半徑。另外，儘管圖3B繪示九個開口，但是可以有更多或更少數量的開口。Although FIG. 3B shows the openings 144 spaced at even intervals, this is not required. The nozzles 120 may be unevenly distributed in the radial direction or angularly, or unevenly distributed in both. For example, the openings 144 may be more densely clustered toward the center of the polishing pad 30. As another example, the openings 144 may be more densely clustered at a radius corresponding to the radius where the slurry 39 is transported to the polishing pad 30 by the slurry transport arm 39. In addition, although FIG. 3B shows nine openings, there may be more or fewer openings.

研磨系統20還可以包括高壓沖洗系統106。高壓沖洗系統106包括複數個噴嘴154（如三至二十個噴嘴），其以高強度的方式將清潔液（如水）引導到研磨墊30上，以清洗墊30並去除用過的漿料、研磨碎屑等。The grinding system 20 may also include a high pressure washing system 106. The high-pressure washing system 106 includes a plurality of nozzles 154 (such as three to twenty nozzles), which guide the cleaning liquid (such as water) to the polishing pad 30 in a high-strength manner to clean the pad 30 and remove the used slurry, Grinding debris, etc.

如圖3B所示，示例性沖洗系統106包括臂150，該臂150在壓板24和研磨墊30上方從研磨墊的邊緣延伸到研磨墊30的中心或至少延伸接近研磨墊30的中心（例如，在研磨墊的總半徑的5％以內）。臂150可以由基部152支撐，且基部152可以與壓板24相同被支撐在相同框架40上。基部152可以包括一個或多個致動器，例如，線性致動器以升高或降低臂150和/或旋轉致動器，以使臂150在壓板24上橫向擺動。臂150經定位避免與其他硬體部件碰撞，如研磨頭70、墊調節盤92和漿料分配臂39。As shown in FIG. 3B, the exemplary flushing system 106 includes an arm 150 that extends above the platen 24 and the polishing pad 30 from the edge of the polishing pad to the center of the polishing pad 30 or at least extending close to the center of the polishing pad 30 (e.g., Within 5% of the total radius of the polishing pad). The arm 150 may be supported by the base 152, and the base 152 may be supported on the same frame 40 as the pressing plate 24. The base 152 may include one or more actuators, for example, a linear actuator to raise or lower the arm 150 and/or a rotary actuator to swing the arm 150 laterally on the platen 24. The arm 150 is positioned to avoid collision with other hardware components, such as the polishing head 70, the pad adjustment disc 92, and the slurry distribution arm 39.

沿著壓板24的旋轉的方向，沖洗系統106的臂150可以在冷卻系統110的臂110和加熱系統140的臂140之間。例如，冷卻系統110的臂110、沖洗系統106的臂150、加熱系統104的臂140、漿料輸送臂39和承載頭70可以沿著壓板24的旋轉方向依序設置。或者，沿著壓板24的旋轉的方向，冷卻系統104的臂140可以在沖洗系統106的臂150和加熱系統140的臂140之間。例如，沖洗系統106的臂150、冷卻系統110的臂110、加熱系統104的臂140、漿料輸送臂39和承載頭70可以沿著壓板24的旋轉方向依序設置。In the direction of rotation of the pressing plate 24, the arm 150 of the flushing system 106 may be between the arm 110 of the cooling system 110 and the arm 140 of the heating system 140. For example, the arm 110 of the cooling system 110, the arm 150 of the washing system 106, the arm 140 of the heating system 104, the slurry conveying arm 39 and the carrying head 70 may be arranged in sequence along the rotation direction of the platen 24. Alternatively, along the direction of rotation of the pressing plate 24, the arm 140 of the cooling system 104 may be between the arm 150 of the flushing system 106 and the arm 140 of the heating system 140. For example, the arm 150 of the washing system 106, the arm 110 of the cooling system 110, the arm 140 of the heating system 104, the slurry conveying arm 39 and the carrying head 70 may be arranged in sequence along the rotation direction of the platen 24.

儘管圖3B繪示以均勻間隔隔開的噴嘴154，但這不是必需的。另外，儘管圖3A和3B繪示九個噴嘴，但是可以有更多或更少數量的噴嘴，例如三至二十個噴嘴。Although FIG. 3B shows nozzles 154 spaced at even intervals, this is not required. In addition, although FIGS. 3A and 3B show nine nozzles, there may be a greater or lesser number of nozzles, such as three to twenty nozzles.

研磨系統2還可以包括控制器12以控制各種部件的操作，如溫度控制系統100。控制器12經配置接收來自針對研磨墊的每個徑向區域之溫度感測器64的溫度測量值。控制器12可以將測量的溫度分佈與期望的溫度分佈比較，且為噴嘴或開口產生到控制機構（如致動器、電源、泵、閥等）的反饋訊號。控制器12如基於內反饋演算法計算反饋訊號，以使控制機構調整冷卻或加熱的量，使得研磨墊和/或漿料達到（或至少更接近）所期望的溫度分佈。The grinding system 2 may also include a controller 12 to control the operation of various components, such as the temperature control system 100. The controller 12 is configured to receive temperature measurements from the temperature sensors 64 for each radial region of the polishing pad. The controller 12 can compare the measured temperature distribution with the expected temperature distribution, and generate feedback signals for the nozzles or openings to the control mechanism (such as actuators, power supplies, pumps, valves, etc.). The controller 12 calculates the feedback signal based on an internal feedback algorithm, so that the control mechanism adjusts the amount of cooling or heating so that the polishing pad and/or slurry reach (or at least get closer to) the desired temperature distribution.

在一些實施中，研磨系統20包括刮刷片或主體170，以將研磨液38均勻地分佈在研磨墊30上。沿著壓板24的旋轉的方向，刮刷片170可以定位於漿料輸送臂39和承載頭70之間。In some implementations, the polishing system 20 includes a wiper blade or body 170 to evenly distribute the polishing liquid 38 on the polishing pad 30. Along the direction of rotation of the pressing plate 24, the wiper blade 170 may be positioned between the slurry conveying arm 39 and the carrying head 70.

圖3B繪示用於每個子系統（如加熱系統102、冷卻系統104和沖洗系統106）的個別的臂，各種子系統可以被包含在由共用臂支撐的單個組件中。例如，組件可以包括冷卻模組、沖洗模組、加熱模組、漿料輸送模組、以及可選地擦刷器模組。每個模組可以包括主體（如弧形主體），該主體可以固定於共用安裝板，且共用安裝板可以固定在臂的端部，使得組件定位於研磨墊30上方。各種流體輸送部件（如管道、通道等）可以在每個主體內部延伸。在一些實施中，模組可以與安裝板分開地拆卸。每個模組可以具有類似的部件，以執行上述相關聯系統的臂的功能。Figure 3B shows individual arms for each subsystem (such as heating system 102, cooling system 104, and flushing system 106). The various subsystems can be contained in a single assembly supported by a common arm. For example, the components may include a cooling module, a flushing module, a heating module, a slurry delivery module, and optionally a wiper module. Each module may include a main body (such as an arc-shaped main body), the main body may be fixed to a common mounting plate, and the common mounting plate may be fixed to the end of the arm, so that the assembly is positioned above the polishing pad 30. Various fluid transport components (such as pipes, channels, etc.) can extend inside each body. In some implementations, the module can be detached separately from the mounting plate. Each module may have similar components to perform the functions of the arms of the associated system described above.

參照圖1、2A、2B、3A和3B，控制器12可以監控由感測器64、214和264接收的溫度測量值，並且控制溫度控制系統100以及輸送到蒸氣處置組件200和250的蒸氣的量。控制器12可以連續地監控溫度量測並在反饋迴路中控制溫度，以調節研磨墊30、承載頭70和調節盤92的溫度。例如，控制器12可以從感測器64接收研磨墊30的溫度，並且控制蒸氣到承載頭70和/或調節器頭92上的輸送以升高承載頭70和/或調節器頭92的溫度，以匹配研磨墊30的溫度。減少溫度差可以幫助防止承載頭70和/或調節器頭92用作在相對較高溫度的研磨墊30上的散熱器，並且可以改善晶圓內均勻性。1, 2A, 2B, 3A and 3B, the controller 12 can monitor the temperature measurement values received by the sensors 64, 214, and 264, and control the temperature control system 100 and the vapor delivered to the vapor treatment components 200 and 250 the amount. The controller 12 can continuously monitor the temperature measurement and control the temperature in a feedback loop to adjust the temperature of the polishing pad 30, the carrier head 70 and the adjustment plate 92. For example, the controller 12 may receive the temperature of the polishing pad 30 from the sensor 64, and control the delivery of vapor to the carrier head 70 and/or the regulator head 92 to increase the temperature of the carrier head 70 and/or the regulator head 92 , To match the temperature of the polishing pad 30. Reducing the temperature difference can help prevent the carrier head 70 and/or the regulator head 92 from being used as a heat sink on the relatively high temperature polishing pad 30, and can improve in-wafer uniformity.

在一些實施例中，控制器12儲存針對研磨墊30、承載頭70和調節器盤92的期望溫度。控制器12可以監控來自感測器64、214和264的溫度量測，並且控制溫度控制系統100以及蒸氣處置組件200和/或250以使研磨墊30、承載頭70和/或調節盤92的溫度達到期望的溫度。藉由使溫度達到期望的溫度，控制器12可以改善晶圓內均勻性和晶圓到晶圓的均勻性。In some embodiments, the controller 12 stores the desired temperature for the polishing pad 30, the carrier head 70, and the regulator disk 92. The controller 12 can monitor the temperature measurements from the sensors 64, 214, and 264, and control the temperature control system 100 and the vapor treatment assembly 200 and/or 250 so that the polishing pad 30, the carrier head 70, and/or the adjustment disc 92 The temperature reaches the desired temperature. By bringing the temperature to a desired temperature, the controller 12 can improve the uniformity within the wafer and the uniformity from wafer to wafer.

或者，控制器12可以將承載頭70和/或調節器頭92的溫度升高到略高於研磨墊30的溫度，以允許承載頭70和/或調節器頭92冷卻到當它們從它們各自的清潔和預熱站移動到研磨墊30時研磨頭30的相同溫度或實質相同的溫度。Alternatively, the controller 12 may raise the temperature of the carrier head 70 and/or the regulator head 92 to slightly higher than the temperature of the polishing pad 30 to allow the carrier head 70 and/or the regulator head 92 to cool down to the point when they are removed from their respective The cleaning and preheating station moves to the same temperature or substantially the same temperature of the polishing head 30 when the polishing pad 30 is moved.

已經描述了本發明的數個實施例。然而，應該理解，在不背離本發明的精神和範圍的情況下，可進行各種修改。因此，其他實施例在以下專利申請範圍內。Several embodiments of the invention have been described. However, it should be understood that various modifications can be made without departing from the spirit and scope of the present invention. Therefore, other embodiments are within the scope of the following patent applications.

2:化學機械研磨設備 4:研磨平臺 6:移送站 8:裝載罩 9:機器人 10:基板 12:控制器 20:研磨站 22:馬達 24:壓板 25:軸 28:驅動軸 30:研磨墊 32:背托層 34:外研磨層 36:研磨表面 38:研磨液 39:漿料供應臂 64:溫度感測器 70:裝載頭 71:軸 72:支撐結構 74:驅動軸 76:承載頭旋轉馬達 78:托架 80:彈性膜 82:可加壓的腔室 84:固持環 86:下部塑膠部分 88:上部 90:墊調節器 92:調節器盤 93:調節器頭 94:臂 96:基部 100:溫度控制系統 102:冷卻系統 104:加熱系統 106:高壓沖洗系統 110:冷卻系統 112:基部 120:噴嘴 122:噴霧 124:徑向區域 126:間隙 128:細長區域 130:液體冷卻劑介質的源 132:氣體源 140:加熱系統 142:基部 144:開口 148:蒸氣的源 150:臂 152:基部 154:噴嘴 170:刮刷片 200:蒸氣處置組件 204:基座 206:殼體 208:凹部 210:軸 214:溫度感測器 225:噴嘴 230:供應管線 235:排放口 245:蒸氣 250:蒸氣處置組件 255:清潔杯 260:垂直驅動軸 264:溫度感測器 275:噴嘴 280:供應管線 285:排放口 295:蒸氣 410:蒸氣產生器 128a:區域 128b:區域 206b:側壁 20a:第一研磨站 20b:第二研磨站 20c:第三研磨站 20d:第四研磨站 84a:外表面 84b:底表面 8a:裝載罩 8b:裝載罩2: Chemical mechanical grinding equipment 4: Grinding platform 6: Transfer station 8: Loading hood 9: Robot 10: substrate 12: Controller 20: Grinding station 22: Motor 24: pressure plate 25: axis 28: drive shaft 30: Grinding pad 32: back support layer 34: Outer grinding layer 36: Grinding surface 38: Grinding liquid 39: slurry supply arm 64: temperature sensor 70: loading head 71: Axis 72: Supporting structure 74: drive shaft 76: Carrying head rotation motor 78: bracket 80: Elastic membrane 82: pressurizable chamber 84: holding ring 86: Lower plastic part 88: upper part 90: pad adjuster 92: regulator plate 93: regulator head 94: arm 96: base 100: Temperature control system 102: Cooling system 104: heating system 106: High pressure flushing system 110: Cooling system 112: base 120: Nozzle 122: spray 124: Radial area 126: Gap 128: Slender area 130: Source of liquid coolant medium 132: Gas source 140: heating system 142: base 144: open 148: Source of Steam 150: arm 152: base 154: Nozzle 170: Scraper 200: Vapor disposal components 204: Pedestal 206: Shell 208: Concave 210: Axis 214: temperature sensor 225: Nozzle 230: supply pipeline 235: Drain 245: Steam 250: Vapor disposal components 255: Clean Cup 260: vertical drive shaft 264: temperature sensor 275: Nozzle 280: Supply pipeline 285: Drain 295: Steam 410: Steam Generator 128a: area 128b: area 206b: side wall 20a: The first grinding station 20b: Second grinding station 20c: Third grinding station 20d: Fourth grinding station 84a: outer surface 84b: bottom surface 8a: loading cover 8b: Loading hood

圖1是研磨設備的實例的示意性平面圖。Fig. 1 is a schematic plan view of an example of a grinding apparatus.

圖2A是示例性承載頭蒸氣處置組件的示意性截面圖。Figure 2A is a schematic cross-sectional view of an exemplary carrier head vapor treatment assembly.

圖2B是示例性調節頭蒸氣處置組件的示意性截面圖。Figure 2B is a schematic cross-sectional view of an exemplary conditioning head vapor treatment assembly.

圖3A是研磨設備的研磨站的實例的示意性截面圖。Fig. 3A is a schematic cross-sectional view of an example of a grinding station of a grinding apparatus.

圖3B是化學機械研磨設備的示例研磨站的示意性俯視圖。Figure 3B is a schematic top view of an example polishing station of a chemical mechanical polishing apparatus.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無Domestic deposit information (please note in the order of deposit institution, date and number) no Foreign hosting information (please note in the order of hosting country, institution, date, and number) no

8:裝載罩 8: Loading hood

10:基板 10: substrate

12:控制器 12: Controller

70:裝載頭 70: loading head

74:驅動軸 74: drive shaft

80:彈性膜 80: Elastic membrane

82:可加壓的腔室 82: pressurizable chamber

84:固持環 84: holding ring

84a:外表面 84a: outer surface

84b:底表面 84b: bottom surface

86:下部塑膠部分 86: Lower plastic part

88:上部 88: upper part

200:蒸氣處置組件 200: Vapor disposal components

204:基座 204: Pedestal

206:殼體 206: Shell

206b:側壁 206b: side wall

208:凹部 208: Concave

210:軸 210: Axis

214:溫度感測器 214: temperature sensor

225:噴嘴 225: Nozzle

230:供應管線 230: supply pipeline

235:排放口 235: Drain

245:蒸氣 245: Steam

410:蒸氣產生器 410: Steam Generator

Claims (19)

一種用於一化學機械研磨系統的溫度控制之方法，包括以下步驟： 當該研磨系統中的一部件與該研磨系統中的一研磨墊分隔開時，引導一氣體，該氣體包含從一孔口（orifice）到該部件的蒸氣，以將該部件的一溫度上升到一升高的溫度；及 在該加熱的部件回到一周圍溫度前，移動該加熱的部件與該研磨墊接觸。A method for temperature control of a chemical mechanical polishing system includes the following steps: When a component in the polishing system is separated from a polishing pad in the polishing system, a gas is introduced that contains vapor from an orifice to the component to increase a temperature of the component To an elevated temperature; and Before the heated part returns to an ambient temperature, the heated part is moved to contact the polishing pad. 如請求項1所述之方法，包括以下步驟：當該蒸氣被引導到該部件上時，測量該部件的一溫度，以及當該部件到達一目標溫度時，停止該蒸氣。The method according to claim 1, comprising the steps of measuring a temperature of the part when the steam is directed to the part, and stopping the steam when the part reaches a target temperature. 如請求項2所述之方法，包括以下步驟：測量該研磨墊的一溫度，以及基於該測量到的溫度計算該目標溫度。The method according to claim 2, including the following steps: measuring a temperature of the polishing pad, and calculating the target temperature based on the measured temperature. 如請求項1所述之方法，其中當放置該部件接觸該研磨墊時，該部件的該溫度近乎等於該研磨墊的一溫度。The method of claim 1, wherein when the component is placed in contact with the polishing pad, the temperature of the component is approximately equal to a temperature of the polishing pad. 一種用於一化學機械研磨系統之清潔方法，包括以下步驟： 當該研磨系統中的一部件與該研磨系統中的一研磨墊分隔開時，引導一氣體，該氣體包含從一孔口（orifice）到該部件的蒸氣，以將研磨副產物自該部件清潔掉；及 移動該經清潔的部件與該研磨墊接觸。A cleaning method for a chemical mechanical polishing system, including the following steps: When a component in the polishing system is separated from a polishing pad in the polishing system, a gas is introduced that contains vapor from an orifice to the component to remove the by-products of the polishing from the component Clean it out; and Move the cleaned part into contact with the polishing pad. 如請求項1或5所述之方法，包括以下步驟：設置一計時器以及該計時器時間到（expiration）時停止該蒸氣。The method according to claim 1 or 5 includes the following steps: setting a timer and stopping the steam when the timer expires. 如請求項1或5所述之方法，其中該氣體具有70至100ºC的一溫度。The method according to claim 1 or 5, wherein the gas has a temperature of 70 to 100ºC. 如請求項1或5所述之方法，其中該蒸氣包括乾蒸氣。The method according to claim 1 or 5, wherein the steam includes dry steam. 如請求項1或5所述之方法，包括以下步驟：將該部件定位於與該研磨墊分隔開的一處置站中，以及將蒸氣引導至該處置站處的該部件上。The method according to claim 1 or 5, comprising the steps of: positioning the part in a treatment station separated from the polishing pad, and directing steam to the part at the treatment station. 如請求項10所述之方法，包括以下步驟：當蒸氣被引導至該部件上時，旋轉該處置站中的該部件或垂直地移動該部件。The method according to claim 10, comprising the following steps: when steam is directed to the part, rotating the part in the treatment station or moving the part vertically. 如請求項1或5所述之方法，其中該部件包括一承載頭或待研磨的一基板。The method according to claim 1 or 5, wherein the component includes a carrier head or a substrate to be polished. 如請求項11所述之方法，其中該蒸氣被引導至在一基板移送站處或一壓板間（inter-platen）站處的該部件上。The method of claim 11, wherein the vapor is directed to the component at a substrate transfer station or an inter-platen station. 如請求項1或5所述之方法，其中該部件包括一調節器盤或調節器頭。The method according to claim 1 or 5, wherein the component includes an adjuster disc or an adjuster head. 如請求項13所述之方法，其中該蒸氣被引導至在一調節器盤清潔杯（conditioner disk cleaning cup）處的該部件上。The method of claim 13, wherein the vapor is directed to the component at a conditioner disk cleaning cup. 如請求項5所述之方法，其中清潔該部件的步驟包括以下步驟：去除凝結的漿料或研磨碎屑。The method according to claim 5, wherein the step of cleaning the part includes the following steps: removing condensed slurry or grinding debris. 一種化學機械研磨系統，包括： 一壓板，該壓板支撐一研磨墊； 一鍋爐（boiler）； 一處置站，該處置站與該研磨墊分隔開，該處置站具有複數個噴嘴，以將蒸氣從該鍋爐引導至定位於該處置站中的一主體上； 一致動器，該致動器將該部件從該處置站移動至接觸該研磨墊； 一控制器，該控制器經配置施行以下步驟： 使該處置站將該蒸氣引導至該部件上，以將該部件的一溫度上升至一升高的溫度，及 在該部件回到一周圍溫度前，使該致動器將該部件從該處置站移動至接觸該研磨墊。A chemical mechanical polishing system, including: A pressure plate, the pressure plate supports a polishing pad; A boiler (boiler); A treatment station separated from the polishing pad, the treatment station having a plurality of nozzles to guide steam from the boiler to a main body positioned in the treatment station; An actuator that moves the part from the disposal station to contact the polishing pad; A controller that is configured to perform the following steps: Cause the disposal station to direct the vapor to the component to raise a temperature of the component to an elevated temperature, and Before the part returns to an ambient temperature, the actuator is caused to move the part from the treatment station to contact the polishing pad. 一種化學機械研磨系統，包括： 一壓板，該壓板支撐一研磨墊； 一鍋爐； 一處置站，該處置站與該研磨墊分隔開，該處置站具有複數個噴嘴，以將蒸氣從該鍋爐引導至定位於該處置站中的一主體上； 一致動器，該致動器將該部件從該處置站移動至接觸該研磨墊； 一控制器，該控制器經配置施行以下步驟： 使該處置站將該蒸氣引導至該部件上，以將清潔該部件，及 使該致動器將該經清潔的部件從該處置站移動至接觸該研磨墊。A chemical mechanical polishing system, including: A pressure plate, the pressure plate supports a polishing pad; A boiler A treatment station separated from the polishing pad, the treatment station having a plurality of nozzles to guide steam from the boiler to a main body positioned in the treatment station; An actuator that moves the part from the disposal station to contact the polishing pad; A controller that is configured to perform the following steps: Cause the disposal station to direct the vapor to the part so that the part will be cleaned, and The actuator is caused to move the cleaned part from the disposal station to contact the polishing pad. 如請求項16或17所述之系統，其中該部件包括一承載頭或一基板。The system according to claim 16 or 17, wherein the component includes a carrier head or a substrate. 如請求項16或17所述之系統，其中該部件包括一調節器頭或調節器盤。The system according to claim 16 or 17, wherein the component includes a regulator head or regulator disc.
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