TW202110540A - Showerhead assembly with multiple fluid delivery zones - Google Patents
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- TW202110540A TW202110540A TW109139455A TW109139455A TW202110540A TW 202110540 A TW202110540 A TW 202110540A TW 109139455 A TW109139455 A TW 109139455A TW 109139455 A TW109139455 A TW 109139455A TW 202110540 A TW202110540 A TW 202110540A
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- 239000012530 fluid Substances 0.000 title abstract description 8
- 239000007789 gas Substances 0.000 claims abstract description 190
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000011261 inert gas Substances 0.000 claims abstract description 30
- 238000009792 diffusion process Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 3
- 238000007865 diluting Methods 0.000 claims description 2
- 238000004891 communication Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 235000012149 noodles Nutrition 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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Abstract
Description
本揭示的實施方式大體涉及一種用於半導體處理裝置的噴淋頭組件,並且更具體地涉及一種具有用於獨立控制從噴淋頭組件穿過的流體的多個區域的噴淋頭組件。The embodiments of the present disclosure generally relate to a shower head assembly for a semiconductor processing device, and more particularly to a shower head assembly having multiple regions for independently controlling fluid passing through the shower head assembly.
可靠產生亞半微米和更小的特徵是下一代超大型積體電路(VLSI)和特大型積體電路(ULSI)的半導體設備的關鍵技術挑戰之一。然而,隨著電路技術的極限推進,收縮尺寸的VLSI和ULSI技術對處理能力有另外需求。在基板上可靠形成閘極結構對VLSI和ULSI成功並且對於繼續努力增加電路密度來說是有用的。Reliably generating sub-half micron and smaller features is one of the key technical challenges for the next generation of very large integrated circuit (VLSI) and ultra-large integrated circuit (ULSI) semiconductor devices. However, as the limits of circuit technology advance, shrinking VLSI and ULSI technologies have additional requirements for processing capabilities. Reliable formation of the gate structure on the substrate is useful for VLSI and ULSI success and for continued efforts to increase circuit density.
隨著下一代設備的電路密度增加,互連件(諸如通孔、溝槽、觸點、閘極結構和其他特徵,以及在它們之間的介電材料)的寬度減至45 nm和32 nm尺寸以及更小。為了能夠製造下一代設備和結構,通常在半導體晶片中使用三維(3D)特徵堆疊。具體來說,鰭式場效應電晶體(FinFET)通常用於在半導體晶片中形成三維(3D)結構。藉由以三維而非常規二維的方式佈置電晶體,多個電晶體可在積體電路(IC)中非常靠近彼此放置。隨著電路密度和堆疊的增加,用以選擇性地將後續材料沉積在先前沉積材料上的能力變得重要。控制透過噴淋頭組件來輸送到基板的流體的能力在輔助來成功製造下一代設備方面變為越來越為有用。As the circuit density of next-generation devices increases, the width of interconnects (such as vias, trenches, contacts, gate structures and other features, and the dielectric materials between them) is reduced to 45 nm and 32 nm Size and smaller. In order to be able to manufacture next-generation devices and structures, three-dimensional (3D) feature stacks are often used in semiconductor wafers. Specifically, FinFETs are commonly used to form three-dimensional (3D) structures in semiconductor wafers. By arranging transistors in a three-dimensional rather than conventional two-dimensional manner, multiple transistors can be placed very close to each other in an integrated circuit (IC). As circuit density and stacking increase, the ability to selectively deposit subsequent materials on previously deposited materials becomes important. The ability to control the fluid delivered to the substrate through the showerhead assembly has become increasingly useful in assisting in the successful manufacture of next-generation devices.
因此,需要一種改良的噴淋頭組件。Therefore, there is a need for an improved shower head assembly.
在一個實施方式中,在本文中揭示一種噴淋頭組件。所述噴淋頭組件包括面板材和底板材。面板材具有第一側和第二側。面板材具有多個孔,所述多個孔被配置成將製程氣體從所述第一側輸送到所述第二側。底板材被定位在面板材的第一側的相鄰位置。底板材具有多個區域,其中每個區域具有多個孔,所述多個孔被配置成使惰性氣體穿過所述底板材來流入限定在所述面板材與所述底板材之間的氣室。惰性氣體會與製程氣體在氣室中混合。In one embodiment, a shower head assembly is disclosed herein. The shower head assembly includes a face plate and a bottom plate. The face plate has a first side and a second side. The face plate has a plurality of holes configured to transport process gas from the first side to the second side. The bottom plate is positioned adjacent to the first side of the face plate. The bottom plate has a plurality of regions, wherein each region has a plurality of holes configured to allow inert gas to pass through the bottom plate to flow into the gas defined between the top plate and the bottom plate. room. The inert gas is mixed with the process gas in the gas chamber.
在另一實施方式中,在本文中揭示一種噴淋頭組件。所述噴淋頭組件包括面板材和底板材。噴淋頭包括第一側和第二側。面板材具有多個孔,所述多個孔被配置成將製程氣體從所述第一側輸送到所述第二側。底板材被定位在面板材的第一側的相鄰位置,從而在所述面板材與所述底板材之間限定氣室,其中所述底板材具有多個區域。每個區域包括導通率控制器組件,所述導通率控制器組件從底板材延伸到氣室之中。所述導通率控制器組件被配置成控制氣室內的製程氣體的導通率。In another embodiment, a shower head assembly is disclosed herein. The shower head assembly includes a face plate and a bottom plate. The shower head includes a first side and a second side. The face plate has a plurality of holes configured to transport process gas from the first side to the second side. The bottom plate is positioned adjacent to the first side of the top plate so as to define an air chamber between the top plate and the bottom plate, wherein the bottom plate has a plurality of regions. Each area includes a conduction rate controller assembly that extends from the bottom plate into the air chamber. The conductivity controller component is configured to control the conductivity of the process gas in the gas chamber.
在另一實施方式中,在本文中揭示一種噴淋頭組件。所述噴淋頭組件包括面板材和底板材。噴淋頭包括第一側和第二側。面板材具有多個孔,所述多個孔被配置成將製程氣體從所述第一側輸送到所述第二側。底板材被定位在面板材的第一側的相鄰位置,從而在所述面板材與所述底板材之間限定氣室,其中多個氣體線路被形成為穿過所述底板材開口至所述氣室中。多個氣體線路在底板材中形成多個區域,其中每個區域被配置成將不同量的製程氣體提供到氣室。In another embodiment, a shower head assembly is disclosed herein. The shower head assembly includes a face plate and a bottom plate. The shower head includes a first side and a second side. The face plate has a plurality of holes configured to transport process gas from the first side to the second side. The bottom plate is positioned adjacent to the first side of the top plate so as to define an air chamber between the top plate and the bottom plate, wherein a plurality of gas lines are formed to pass through the bottom plate opening to all In the air chamber. A plurality of gas lines forms a plurality of regions in the bottom plate, and each region is configured to provide a different amount of process gas to the gas chamber.
圖1示出根據一個實施方式的化學氣相沉積(CVD)處理腔室100,所述處理腔室具有噴淋頭組件112。處理腔室100包括腔室主體102,所述腔室主體具有側壁104、底部105和蓋106。側壁104和蓋106限定內部容積108。基板傳送埠110可以形成在側壁104中,以將基板傳送進出內部容積108。FIG. 1 shows a chemical vapor deposition (CVD)
基板支撐組件126設置在處理腔室100的內部容積108內,位於噴淋頭組件112下方。基板支撐組件126被配置成在處理期間支撐基板101。基板支撐組件126可以包括可移動地設置成穿過其中的多個升降桿128。升降桿128可致動成從基板支撐組件126的支撐表面130突出,由此將基板101放置成與基板支撐組件126成間隔關係,以便促成利用傳送用機器人(未示出)傳送透過基板傳送埠110。The
噴淋頭組件112設置在內部容積108中,並耦接到蓋106。噴淋頭組件112包括底板材114和面板材118。底板材114被定位在蓋106下方,使得第一氣室120形成在底板材114與蓋106之間。在一個實施方式中,噴淋頭組件112還進一步包括擴散板材116,擴散板材定位在底板材114與面板材118之間。擴散板材116形成底板材114與擴散板材116之間的第二氣室124和在擴散板材116與面板材118之間的第三氣室122。The
第一氣室120由底板材114劃分成多個區域。例如,在圖1中示出的實施方式中,第一氣室120被劃分成區Z2和區Z3。第一氣室120被配置成從耦接到惰性氣源144的氣體輸送系統180接收惰性氣體。惰性氣體可被提供到每個區Z2和Z3。例如,相較於提供到Z3的惰性氣體,更大量的惰性氣體可被提供到Z2。在一個實施方式中,氣體輸送系統180使用流比控制技術相對於區域Z3來控制輸送到區域Z2的惰性氣體的量。在一個實施方式中,可以使用氣動閥和設定好大小的孔口的不同組合實現氣體分流。在另一實施方式中,當組合使用時,使用不同的輸氣閥(諸如壓電閥和ALD閥)可以實現至不同區域的相同氣體分流結果。The
底板材114被配置成將惰性氣體從第一氣室120提供到第二氣室124。底板材114包括多個孔132。孔132允許第一氣室120與第二氣室124之間的流體連通。多個孔132被定位在區域Z2和Z3下方,並且因此孔132分成底板材114中的對應區域Z2、Z3。The
處理腔室100還進一步包括中心導管138。中心導管138被形成為穿過蓋106,並且通向第二氣室124。中心導管138被配置成將製程氣體從製程氣體源140提供到第二氣室124。在第二氣室124中,由中心導管138供應的製程氣體與從底板材114提供的惰性氣體混合。由於穿過底板材114中的每個區域進入第二氣室124的惰性氣體的量不同,因此,製程氣體與惰性氣體的比率在第二氣室124上並不均勻。因此,在第二氣室124中,存在由惰性氣體稀釋的三個製程氣體稀釋區(A1、A2、A3)。第一區A1位於中心導管138的正下方,其中製程氣體未受第一氣體稀釋;第二區域A2位於第一氣室120中的Z2下方;並且第三區域A3位於第一氣室120中的Z3下方。每個區域A1-A3可以包括惰性氣體與製程氣體的不同比率。在氣室120中形成製程氣體的多個區域允許離開面板材並輸送到基板的製程氣體的分佈存在梯度,以便改良薄膜沉積的性質。The
擴散板材116包括多個孔134。多個孔134允許第二氣室124和第三氣室122之間的流體流通。擴散板材116被配置成分散提供到第三氣室122的氣體混合物。第三氣室122藉由形成為穿過面板材118的多個孔136來與面板材118與基板支撐組件126之間限定的處理區域142流體連通。孔允許第三氣室122與處理區域142之間的流體連通。The
控制器190被耦接到處理腔室100。控制器190包括中央處理單元(CPU)192、記憶體194和支援電路196。控制器190用於控制供應到第一氣室120的每個區域Z2、Z3的惰性氣體的量。控制至每個區域的惰性氣體的量允許離開噴淋頭組件112的氣體分佈均勻性得以控制。CPU 192可為可用於工業環境的任何形式通用電腦處理器。軟體常式可以存儲在記憶體194(諸如隨機存取記憶體、唯讀記憶體、軟碟或硬碟,或者其他形式數位存儲裝置)中。支援電路196常規地耦接到CPU 192,並且可以包括快取記憶體、時鐘電路、輸入/輸出子系統、電源等等。軟體常式在由CPU 192執行時,將CPU 192轉變為專用電腦(控制器)190,從而控制處理腔室100,以使得這些製程根據本揭示來執行。軟體常式還可透過位於腔室的遠端位置的第二控制器(未示出)存儲和/或執行。The
圖2示出根據一個實施方式的氣體輸送系統180。氣體輸送系統180包括耦接到第一氣室120的每個區域Z2、Z3的流比控制設備200。流比控制設備200包括耦接到氣源144的供應線路202、多個閥204a、204b、多個孔口206a、206b,以及出口線路208。供應線路202將惰性氣體輸送到每個閥204a、204b。閥204a、204b被獨立地控制,並被配置成打開和關閉以控制供應到每個相應孔口206a、206b的惰性氣體的量。每個孔口206a、206b可設定成不同大小,以使得每個區域可以接收不同量的氣流。另外的閥和孔口可基於第一氣室120中期望的區域數量來添加或減少。Figure 2 shows a
圖3示出根據一個實施方式的CVD處理腔室300。處理腔室300包括腔室主體302,所述腔室主體具有側壁304、底部305和蓋306。側壁304和蓋306限定內部容積308。基板傳送埠310可以形成在側壁304中,以將基板傳送進出內部容積308。FIG. 3 shows a
處理腔室300還進一步包括噴淋頭組件312。噴淋頭組件312包括底板材314和面板材118。底板材314被定位在蓋306下方,以使得第一氣室320形成在底板材314與蓋306之間。在一個實施方式中,噴淋頭組件312還進一步包括擴散板材116,擴散板材定位在底板材314與面板材118之間。擴散板材116形成底板材314與擴散板材116之間的第二氣室324和擴散板材116與面板材118之間的第三氣室322。中心導管138被形成為穿過蓋306,並且通向第二氣室324。中心導管138被配置成將製程氣體從製程氣體源140提供到第二氣室324。惰性氣體線路380被形成為穿過蓋306和底板材314,並且通向第二氣室324。惰性氣體線路380被配置成將惰性氣體從惰性氣體源382提供到第二氣室324,使得惰性氣體與製程氣體在第二氣室324中混合。The
可移動的導通率控制器組件348設置在第一氣室320內,並且延伸穿過底板材314進入第二氣室324。可移動的導通率控制器組件348被配置成控制透過擴散板材116與底板材314之間限定的間隙的導通率,以便控制流過第二氣室324的不同區域(區)的氣體的量。可移動的導通率控制器組件348包括導通率控制器350和致動器352。在一個實施方式中,導通率控制器350可以包括軸354和板材356。軸354可以延伸穿過底板材314進入第二氣室324,以使得板材356在第二氣室324之內。在一個實施方式中,O形環358和波紋管360可以用於維持第一氣室320和第二氣室324之間的隔離。The movable conduction
致動器352(諸如電機或氣缸)可耦接到導通率控制器350。在一個實施方式中,電機可安裝到第一氣室320中設置的Z形台362。致動器352被配置成在z方向上移動導通率控制器350。使導通率控制器350升高和降低控制將分佈到第二氣室324的製程氣體混合物流的量。例如,導通率控制器350與擴散板材116之間的較大間隙允許在第二氣室324內實現更大量的製程氣體混合物。相反,導通率控制器350與擴散板材116之間的較小間隙允許在第二氣室324內實現更小量的製程氣體混合物。第一氣室320中設置的每個導通率控制器350可被獨立地控制,以便在第二氣室324中限定多個製程氣體混合物區域。多個孔134定位在多個區域下方。孔134分成擴散板材116中的對應區域。由於穿過擴散板材116中的每個區域進入第三腔室322的製程氣體混合物的濃度不同,因此,製程氣體混合物的濃度在第三腔室322上並不均勻。多個製程氣體混合物區域限定在第三氣室322中,從而允許離開面板材118並輸送到基板的製程氣體混合物的分佈存在梯度,以便改良薄膜沉積的性質。An actuator 352 (such as a motor or a cylinder) may be coupled to the
控制器390被耦接到處理腔室300。控制器390包括中央處理單元(CPU)392、記憶體394和支援電路396。控制器390可耦接到致動器352,以便控制導通率控制器350。控制導通率控制器350允許噴淋頭組件312中的製程氣體的分佈存在梯度。CPU 392可為可用於工業環境的任何形式通用電腦處理器。軟體常式可以存儲在記憶體394(諸如隨機存取記憶體、唯讀記憶體、軟碟或硬碟),或者其他形式數位存儲裝置中。支援電路396常規地耦接到CPU 392,並且可以包括快取記憶體、時鐘電路、輸入/輸出子系統、電源等等。軟體常式在由CPU 392執行時,將CPU 392轉變為控制處理腔室300的專用電腦(控制器)390,以使得這些製程根據本揭示執行。軟體常式還可藉由位於腔室的遠端位置的第二控制器(未示出)存儲和/或執行。The
圖4示出根據另一實施方式的CVD處理腔室400。處理腔室400包括腔室主體402,所述腔室主體具有側壁404、底部405和蓋406。側壁404和蓋406限定內部容積408。基板傳送埠410可以形成在側壁404中,以將基板傳送進出內部容積408。FIG. 4 shows a
處理腔室400進一步包括噴淋頭組件412。噴淋頭組件412包括底板材414和面板材118。底板材414被定位在蓋406下方,以使得在底板材414與面板材118之間形成氣室420。耦接到氣源440的多個氣體線路424延伸穿過蓋406和底板材414,以向氣室420提供製程氣體。每個線路424可配置成將不同濃度製程氣體輸送到氣室420。例如,相較流過惰性氣體線路424的製程氣體的濃度來說,製程氣體的多個區域可藉由利用外部氣體線路424中的惰性氣體稀釋製程氣體濃度來形成在氣室420中。多個孔136被定位在這些區下方,並且因此孔136被分成對應區域。在氣室420中形成製程氣體濃度的多個區域允許輸送到基板的製程氣體的量存在梯度,以便改良薄膜沉積的性質。The
控制器490被耦接到處理腔室400。控制器490包括中央處理單元(CPU)492、記憶體494和支援電路496。控制器490可耦接到氣源440,以便控制供應到每個氣體線路424的製程氣體的濃度。控制每個相應氣體線路424允許調節噴淋頭組件中的氣體分佈。CPU 492可為可用於工業環境的任何形式通用電腦處理器。軟體常式可以存儲在記憶體494(諸如隨機存取記憶體、唯讀記憶體、軟碟或硬碟),或者其他形式數位存儲裝置中。支援電路496常規地耦接到CPU 492,並且可以包括快取記憶體、時鐘電路、輸入/輸出子系統、電源等等。軟體常式在由CPU 492執行時,將CPU 492轉變為控制處理腔室400的專用電腦(控制器)490,以使得這些製程根據本揭示執行。軟體常式還可藉由位於腔室的遠端位置的第二控制器(未示出)存儲和/或執行。The
儘管上述內容針對本揭示的實施方式,但也可在不脫離本揭示的基本範圍的情況下設計本揭示的其他和進一步實施方式,並且本揭示的範圍是由隨附申請專利範圍來確定。Although the above content is directed to the embodiments of the present disclosure, other and further embodiments of the present disclosure can also be designed without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the scope of the attached application.
100:處理腔室 101:基板 102:腔室主體 104:側壁 105:底部 106:蓋 108:內部容積 110:埠 112:噴淋頭組件 114:底板材 116:擴散板材 118:面板材 120:第一氣室 122:第三氣室 124:第二氣室 126:基板支撐組件 128:升降桿 130:支撐表面 132:孔 134:孔 136:孔 138:中心導管 140:製程氣源 142:處理區域 144:氣源 180:氣體輸送系統 190:控制器 192:CPU 194:記憶體 196:支援電路 200:流比控制設備 202:供應線路 204a:閥 204b:閥 206a:孔口 206b:孔口 208:出口線路 300:CVD處理腔室 302:腔室主體 304:側壁 306:蓋 308:內部容積 310:埠 312:噴淋頭組件 314:底板材 320:第一氣室 322:第三氣室 324:第二氣室 348:可移動的導通率控制器組件 350:導通率控制器 352:致動器 354:軸 356:板材 358:O形環 360:波紋管 362:Z形台 380:惰性氣體線路 382:惰性氣源 390:控制器 392:CPU 394:記憶體 396:支援電路 400:CVD處理腔室 402:腔室主體 404:側壁 406:蓋 408:內部容積 410:埠 412:噴淋頭組件 414:底板材 420:氣室 424:氣體線路 440:氣源 490:控制器 492:CPU 494:記憶體 496:支援電路100: processing chamber 101: substrate 102: Chamber body 104: sidewall 105: bottom 106: cover 108: internal volume 110: Port 112: Sprinkler head assembly 114: bottom plate 116: Diffusion sheet 118: Noodle Plate 120: first air chamber 122: third air chamber 124: second air chamber 126: Substrate support assembly 128: Lifting rod 130: support surface 132: Hole 134: Hole 136: Hole 138: Central catheter 140: Process gas source 142: Processing area 144: Air Source 180: Gas delivery system 190: Controller 192: CPU 194: Memory 196: Support Circuit 200: Flow ratio control equipment 202: supply line 204a: Valve 204b: Valve 206a: Orifice 206b: Orifice 208: Exit line 300: CVD processing chamber 302: Chamber body 304: side wall 306: cover 308: Internal volume 310: Port 312: Sprinkler head assembly 314: Bottom Plate 320: first air chamber 322: Third Air Chamber 324: second air chamber 348: Movable conduction rate controller assembly 350: Conductivity controller 352: Actuator 354: Axis 356: Plate 358: O-ring 360: bellows 362: Z-shaped table 380: Inert gas line 382: Inert Gas Source 390: Controller 392: CPU 394: Memory 396: Support Circuit 400: CVD processing chamber 402: Chamber body 404: Sidewall 406: cover 408: Internal volume 410: Port 412: Sprinkler head assembly 414: Bottom Plate 420: Air Chamber 424: Gas Line 440: Air Source 490: Controller 492: CPU 494: Memory 496: Support Circuit
因此,為了能夠詳細理解本揭示的上述特徵結構所用方式,上文所簡要概述的本揭示的更具體的描述可以參考各個實施方式獲得,一些實施方式例示出在附圖中。然而,應當注意,附圖僅僅示出本揭示的典型實施方式,並且因此不應視為限制本揭示的範圍,因為本揭示可允許其他等效實施方式。Therefore, in order to be able to understand in detail the manner in which the above-mentioned characteristic structure of the present disclosure is used, a more specific description of the present disclosure briefly summarized above can be obtained with reference to various embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings only show typical embodiments of the present disclosure, and therefore should not be considered as limiting the scope of the present disclosure because the present disclosure may allow other equivalent embodiments.
圖1示出根據一個實施方式的具有噴淋頭組件之處理腔室。Figure 1 shows a processing chamber with a shower head assembly according to one embodiment.
圖2示出根據一個實施方式的圖1的氣體輸送系統。Figure 2 shows the gas delivery system of Figure 1 according to one embodiment.
圖3示出根據一個實施方式的具有噴淋頭組件之處理腔室。Figure 3 shows a processing chamber with a shower head assembly according to one embodiment.
圖4示出根據一個實施方式的具有噴淋頭組件之處理腔室。Figure 4 shows a processing chamber with a shower head assembly according to one embodiment.
為了促進理解,已儘可能使用相同元件符號指定各圖所共有的相同元件。應預見到,一個實施方式的要素和特徵可有利地併入其他實施方式,而無需進一步敘述。In order to facilitate understanding, the same element symbols have been used as much as possible to designate the same elements common to each figure. It should be foreseen that the elements and features of one embodiment can be advantageously incorporated into other embodiments without further description.
然而,應當注意,附圖僅僅示出本揭示的示例性的實施方式,並且因此不應視為限制本揭示的範圍,因為本揭示可允許其他等效實施方式。However, it should be noted that the accompanying drawings only show exemplary embodiments of the present disclosure, and therefore should not be considered as limiting the scope of the present disclosure because the present disclosure may allow other equivalent embodiments.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無Domestic deposit information (please note in the order of deposit institution, date and number) no Foreign hosting information (please note in the order of hosting country, institution, date, and number) no
100:處理腔室 100: processing chamber
101:基板 101: substrate
102:腔室主體 102: Chamber body
104:側壁 104: sidewall
105:底部 105: bottom
106:蓋 106: cover
108:內部容積 108: internal volume
110:埠 110: Port
112:噴淋頭組件 112: Sprinkler head assembly
114:底板材 114: bottom plate
116:擴散板材 116: Diffusion sheet
118:面板材 118: Noodle Plate
120:第一氣室 120: first air chamber
122:第三氣室 122: third air chamber
124:第二氣室 124: second air chamber
126:基板支撐組件 126: Substrate support assembly
128:升降桿 128: Lifting rod
130:支撐表面 130: support surface
132:孔 132: Hole
134:孔 134: Hole
136:孔 136: Hole
138:中心導管 138: Central catheter
140:製程氣源 140: Process gas source
142:處理區域 142: Processing area
144:氣源 144: Air Source
180:氣體輸送系統 180: Gas delivery system
190:控制器 190: Controller
192:CPU 192: CPU
194:記憶體 194: Memory
196:支援電路 196: Support Circuit
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US14/965,061 US10233543B2 (en) | 2015-10-09 | 2015-12-10 | Showerhead assembly with multiple fluid delivery zones |
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Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10233543B2 (en) | 2015-10-09 | 2019-03-19 | Applied Materials, Inc. | Showerhead assembly with multiple fluid delivery zones |
JP6696322B2 (en) * | 2016-06-24 | 2020-05-20 | 東京エレクトロン株式会社 | Gas processing apparatus, gas processing method and storage medium |
KR102546317B1 (en) * | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
KR102493945B1 (en) * | 2017-06-06 | 2023-01-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Deposition radial and edge profile tenability through independent control of teos flow |
JP6597732B2 (en) * | 2017-07-24 | 2019-10-30 | 東京エレクトロン株式会社 | Gas processing equipment |
US11535936B2 (en) * | 2018-07-23 | 2022-12-27 | Lam Research Corporation | Dual gas feed showerhead for deposition |
CN113924386A (en) * | 2019-05-15 | 2022-01-11 | 应用材料公司 | Dynamic multi-zone flow control for a processing system |
JP2023507111A (en) * | 2019-12-17 | 2023-02-21 | アプライド マテリアルズ インコーポレイテッド | High density plasma chemical vapor deposition chamber |
DE102020123076A1 (en) * | 2020-09-03 | 2022-03-03 | Aixtron Se | Gas inlet element of a CVD reactor with two feed points |
US20230074149A1 (en) * | 2021-09-09 | 2023-03-09 | Applied Materials, Inc. | Atomic layer deposition part coating chamber |
US20230374660A1 (en) * | 2022-05-17 | 2023-11-23 | Applied Materials, Inc. | Hardware to uniformly distribute active species for semiconductor film processing |
WO2024010295A1 (en) * | 2022-07-08 | 2024-01-11 | 주성엔지니어링(주) | Gas spraying apparatus, substrate processing apparatus, and thin film deposition method |
WO2024076477A1 (en) * | 2022-10-06 | 2024-04-11 | Lam Research Corporation | Showerhead for diffusion bonded, multi-zone gas dispersion |
WO2024076478A1 (en) * | 2022-10-06 | 2024-04-11 | Lam Research Corporation | Showerhead gas inlet mixer |
Family Cites Families (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05175135A (en) | 1991-10-03 | 1993-07-13 | Ulvac Japan Ltd | Optical cvd apparatus |
TW415970B (en) | 1997-01-08 | 2000-12-21 | Ebara Corp | Vapor-phase film growth apparatus and gas ejection head |
US6245192B1 (en) | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6415736B1 (en) | 1999-06-30 | 2002-07-09 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
AU2001247685A1 (en) | 2000-03-30 | 2001-10-15 | Tokyo Electron Limited | Method of and apparatus for tunable gas injection in a plasma processing system |
US6502530B1 (en) | 2000-04-26 | 2003-01-07 | Unaxis Balzers Aktiengesellschaft | Design of gas injection for the electrode in a capacitively coupled RF plasma reactor |
JP3982678B2 (en) | 2002-02-27 | 2007-09-26 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP4493932B2 (en) | 2003-05-13 | 2010-06-30 | 東京エレクトロン株式会社 | Upper electrode and plasma processing apparatus |
US20050011447A1 (en) | 2003-07-14 | 2005-01-20 | Tokyo Electron Limited | Method and apparatus for delivering process gas to a process chamber |
US7712434B2 (en) | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
KR100628888B1 (en) | 2004-12-27 | 2006-09-26 | 삼성전자주식회사 | Apparatus for controlling temperature of a showerhead and apparatus for forming a layer having the same |
JP2006324610A (en) * | 2005-05-20 | 2006-11-30 | Matsushita Electric Ind Co Ltd | Device and method of treating substrate |
JP4749785B2 (en) | 2005-07-19 | 2011-08-17 | 東京エレクトロン株式会社 | Gas processing equipment |
KR100599056B1 (en) * | 2005-07-21 | 2006-07-12 | 삼성전자주식회사 | Apparatus and method for removing photoresist |
KR20070021637A (en) * | 2005-08-19 | 2007-02-23 | 세메스 주식회사 | shower head and treating apparatus of a substrate with the shower head |
KR100695168B1 (en) * | 2006-01-10 | 2007-03-14 | 삼성전자주식회사 | Method of forming phase change material thin film, and method of manufacturing phase change memory device using the same |
US8440049B2 (en) * | 2006-05-03 | 2013-05-14 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
JP5211450B2 (en) * | 2006-08-15 | 2013-06-12 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
KR100849929B1 (en) * | 2006-09-16 | 2008-08-26 | 주식회사 피에조닉스 | Apparatus of chemical vapor deposition with a showerhead regulating the injection velocity of reactive gases positively and a method thereof |
US7732309B2 (en) * | 2006-12-08 | 2010-06-08 | Applied Materials, Inc. | Plasma immersed ion implantation process |
WO2008118483A1 (en) | 2007-03-27 | 2008-10-02 | Structured Materials Inc. | Showerhead for chemical vapor deposition (cvd) apparatus |
KR101119627B1 (en) | 2007-03-29 | 2012-03-07 | 도쿄엘렉트론가부시키가이샤 | Plasma process apparatus |
JP5008478B2 (en) | 2007-06-27 | 2012-08-22 | 東京エレクトロン株式会社 | Substrate processing apparatus and shower head |
US20090015599A1 (en) * | 2007-07-09 | 2009-01-15 | Yahoo! Inc. | Draggable mechanism for identifying and communicating the state of an application |
US8202393B2 (en) * | 2007-08-29 | 2012-06-19 | Lam Research Corporation | Alternate gas delivery and evacuation system for plasma processing apparatuses |
US7655564B2 (en) * | 2007-12-12 | 2010-02-02 | Asm Japan, K.K. | Method for forming Ta-Ru liner layer for Cu wiring |
US20090178763A1 (en) * | 2008-01-10 | 2009-07-16 | Applied Materials, Inc. | Showerhead insulator and etch chamber liner |
CN101499407B (en) * | 2008-02-02 | 2010-07-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas dispensing device and semiconductor process plant employing the same |
JP5224855B2 (en) | 2008-03-05 | 2013-07-03 | 東京エレクトロン株式会社 | Electrode unit, substrate processing apparatus, and temperature control method for electrode unit |
US8111978B2 (en) | 2008-07-11 | 2012-02-07 | Applied Materials, Inc. | Rapid thermal processing chamber with shower head |
CN101797530B (en) * | 2009-02-06 | 2014-08-20 | 昆山纳诺新材料科技有限公司 | Centrifugal separation device and method for preparing centrifugal separation solid particles |
US8587331B2 (en) * | 2009-12-31 | 2013-11-19 | Tommie E. Berry | Test systems and methods for testing electronic devices |
CN102234791B (en) * | 2010-05-05 | 2014-02-12 | 财团法人工业技术研究院 | Gas distribution shower module and coating equipment |
US8960235B2 (en) | 2011-10-28 | 2015-02-24 | Applied Materials, Inc. | Gas dispersion apparatus |
JP5848140B2 (en) | 2012-01-20 | 2016-01-27 | 東京エレクトロン株式会社 | Plasma processing equipment |
US9121097B2 (en) | 2012-08-31 | 2015-09-01 | Novellus Systems, Inc. | Variable showerhead flow by varying internal baffle conductance |
US10544508B2 (en) | 2012-09-26 | 2020-01-28 | Applied Materials, Inc. | Controlling temperature in substrate processing systems |
US9395993B2 (en) * | 2013-07-29 | 2016-07-19 | Intel Corporation | Execution-aware memory protection |
KR101560623B1 (en) * | 2014-01-03 | 2015-10-15 | 주식회사 유진테크 | Substrate processing apparatus and substrate processing method |
KR102386812B1 (en) * | 2014-05-16 | 2022-04-15 | 어플라이드 머티어리얼스, 인코포레이티드 | Showerhead design |
US10233543B2 (en) | 2015-10-09 | 2019-03-19 | Applied Materials, Inc. | Showerhead assembly with multiple fluid delivery zones |
-
2015
- 2015-12-10 US US14/965,061 patent/US10233543B2/en not_active Expired - Fee Related
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2016
- 2016-09-30 CN CN201720963683.XU patent/CN207320068U/en active Active
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- 2016-09-30 CN CN201710624010.6A patent/CN107359105B/en active Active
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KR102619494B1 (en) | 2023-12-28 |
TW201718100A (en) | 2017-06-01 |
US20190100839A1 (en) | 2019-04-04 |
TW202228849A (en) | 2022-08-01 |
US20170101712A1 (en) | 2017-04-13 |
TWI763118B (en) | 2022-05-01 |
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