TW202109022A - Wafer appearance inspection device and method - Google Patents
Wafer appearance inspection device and method Download PDFInfo
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Abstract
Description
本發明係關於一種將拍攝到形成於晶圓上之器件晶片之重複外觀圖案之檢查圖像與基準圖像進行比較,而進行該器件晶片之檢查之晶圓外觀檢查裝置及方法。The present invention relates to a wafer appearance inspection device and method for comparing an inspection image of a repeated appearance pattern of a device wafer formed on a wafer with a reference image to inspect the device wafer.
半導體器件當在1片半導體晶圓上形成多數個半導體器件電路(即器件晶片之重複外觀圖案)後,單片化為一個一個之晶片零件,該晶片零件被封裝,作為電子零件以單體出貨或組裝入電氣產品。When semiconductor devices are formed on a semiconductor wafer with a plurality of semiconductor device circuits (ie, the repeated appearance pattern of the device chip), they are singulated into chip parts one by one, and the chip parts are packaged as electronic parts. Goods or assembly into electrical products.
而且,將拍攝到在各個晶片零件單片化前,形成於晶圓上之器件晶片之重複外觀圖案之檢查圖像與基準圖像進行比較而進行檢查(例如專利文獻1),或進行使用探針之電性檢查(例如專利文獻2)。In addition, the inspection image of the repeated appearance pattern of the device wafer formed on the wafer before the individual wafer parts is singulated is compared with the reference image for inspection (for example, Patent Document 1), or use probe Electrical inspection of the needle (for example, Patent Document 2).
在晶圓上呈縱橫矩陣狀以重複圖案形成之器件晶片存在經切割而產品化之「完整晶片」、及因圖案之一部分殘缺而無法產品化之「不完整晶片」。而且,對於完整晶片拍攝外觀,與基準圖像進行比較而進行好壞判定(所謂之檢查),但另一方面,為了縮短處理時間而對於不完整晶片,省略檢查(例如,專利文獻3)。 [先前技術文獻] [專利文獻]Device chips formed in a repeating pattern in a vertical and horizontal matrix on a wafer include "complete chips" that are productized by dicing, and "incomplete chips" that cannot be productized due to partial defects in the pattern. In addition, the photographed appearance of a complete wafer is compared with a reference image to determine whether it is good or bad (so-called inspection). On the other hand, in order to shorten the processing time, the inspection is omitted for incomplete wafers (for example, Patent Document 3). [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本特開2007-155610號公報 [專利文獻2]日本特開平2-290036號公報 [專利文獻3]日本特開平4-276642號公報[Patent Document 1] JP 2007-155610 A [Patent Document 2] Japanese Patent Application Laid-Open No. 2-290036 [Patent Document 3] Japanese Patent Application Laid-Open No. 4-276642
[發明所欲解決之課題][The problem to be solved by the invention]
然而,若對於完整晶片進行外觀檢查,但另一方面省略不完整晶片,則即便在不完整晶片上附帶瑕疵或異物等,該晶圓亦被投入下一工序。However, if the appearance inspection is performed on a complete wafer, but the incomplete wafer is omitted on the other hand, even if defects or foreign objects are attached to the incomplete wafer, the wafer is put into the next process.
因而,若之後存在探針檢查,則有不完整晶片上之瑕疵或異物等與探針(probe)接觸,引起探針破損或晶圓破裂、缺損等諸多問題之虞。Therefore, if there is a probe inspection afterwards, defects or foreign objects on the incomplete wafer may come into contact with the probe, which may cause damage to the probe or wafer cracks, defects, and many other problems.
另一方面,根據先前之外觀檢查手法,在拍攝到不完整晶片之檢查圖像之一部分包含缺損,在與基準圖像進行比較時,該部分被判定為異常,成為疑似缺陷檢測之要因。又,因該疑似缺陷檢測,而處理時間增加。On the other hand, according to the previous visual inspection method, a part of the inspection image of the incomplete wafer contains a defect. When compared with the reference image, the part is judged to be abnormal, which becomes the main cause of suspected defect detection. In addition, the processing time is increased due to the detection of the suspected defect.
因而,本發明係鑒於上述問題點而完成者, 目的在於提供一種晶圓外觀檢查裝置及方法,其即便在晶圓上存在跨檢查區域及非檢查區域而形成之不完整晶片,但只要是晶圓之檢查區域則進行以完整晶片為準之檢查,可對於晶圓之檢查區域整體獲得所期望之檢查結果,亦可防止處理時間增加。 [解決問題之技術手段]Therefore, the present invention was completed in view of the above-mentioned problems, The purpose is to provide a wafer appearance inspection device and method, which even if there are incomplete wafers formed across the inspection area and non-inspection area on the wafer, as long as the inspection area of the wafer is inspected based on the complete wafer , Can obtain the desired inspection result for the entire inspection area of the wafer, and can also prevent the processing time from increasing. [Technical means to solve the problem]
為了解決以上之問題,本發明之一態樣係一種晶圓外觀檢查裝置, 其係拍攝形成於晶圓上之器件晶片之重複外觀圖案之檢查對象部位,且與基準圖像進行比較而進行該器件晶片之檢查者,且具備: 晶圓保持部,其保持晶圓; 攝像部,其拍攝包含檢查對象部位之圖像; 相對移動部,其使晶圓保持部與攝像部相對移動; 基準圖像登錄部,其登錄基準圖像; 晶片布局登錄部,其登錄晶片布局,該晶片布局係規定相對於晶圓之基準姿勢及基準位置的該晶圓之檢查區域及非檢查區域;及 圖像處理部,其對由攝像部拍攝到之圖像進行處理;且 圖像處理部具備: 動態遮罩處理部,其對於拍攝到跨檢查區域及非檢查區域而形成之不完整晶片之檢查對象部位的圖像,基於該圖像被拍攝到之晶圓上之位置資訊及晶片布局,將構成該圖像之像素中相當於非檢查區域之像素之亮度值置換處理為基準圖像之亮度值,而產生檢查圖像;及 比較檢查部,其將由動態遮罩處理部產生之檢查圖像與基準圖像進行比較,而對檢查對象部位進行檢查。In order to solve the above problems, one aspect of the present invention is a wafer appearance inspection device, It is to photograph the inspection target part of the repeated appearance pattern of the device wafer formed on the wafer, and compare it with the reference image to perform the inspection of the device wafer, and has: Wafer holding part, which holds the wafer; The camera part, which takes images containing the part of the inspection object; The relative moving part, which makes the wafer holding part and the imaging part move relatively; The reference image registration section, which registers the reference image; The chip layout registration section, which registers the chip layout, which defines the inspection area and non-inspection area of the wafer relative to the reference posture and reference position of the wafer; and The image processing unit, which processes the image captured by the camera unit; and The image processing department has: The dynamic mask processing section, which captures the image of the inspection target part of the incomplete wafer formed across the inspection area and the non-inspection area, based on the position information and the wafer layout on the wafer where the image is captured The brightness value of the pixels corresponding to the non-inspection area among the pixels constituting the image is replaced by the brightness value of the reference image to generate an inspection image; and The comparison inspection unit compares the inspection image generated by the dynamic mask processing unit with the reference image, and inspects the inspection target part.
又,本發明之另一態樣係一種晶圓外觀檢查方法, 其係拍攝形成於晶圓上之器件晶片之重複外觀圖案之檢查對象部位,且與基準圖像進行比較而進行該器件晶片之檢查者,且具有: 預先登錄基準圖像之步驟; 預先登錄晶片布局之步驟,該晶片布局係規定相對於晶圓之基準姿勢及基準位置的之該晶圓之檢查區域及非檢查區域; 一面使晶圓與攝像機構相對移動,一面拍攝包含檢查對象部位之圖像之步驟;及 處理圖像之步驟;且具有如下步驟: 對於拍攝到跨檢查區域及非檢查區域而形成之不完整晶片的圖像,基於該圖像被拍攝到之晶圓上之位置資訊及晶片布局,將構成該圖像之像素中相當於非檢查區域之像素之亮度值置換處理為基準圖像之亮度值,而產生檢查圖像;及 將檢查圖像與基準圖像進行比較,而對檢查對象部位進行檢查。Moreover, another aspect of the present invention is a wafer appearance inspection method, It is the inspection object part of the repeated appearance pattern of the device wafer formed on the wafer, and the inspection of the device wafer is compared with the reference image, and has: Steps to register the reference image in advance; The step of registering the chip layout in advance. The chip layout specifies the inspection area and non-inspection area of the wafer relative to the reference posture and reference position of the wafer; Steps of moving the wafer and the camera mechanism relative to each other, and taking an image of the inspection object on the other side; and Steps to process images; and have the following steps: For an image of an incomplete wafer formed across the inspection area and the non-inspection area, based on the position information on the wafer where the image was shot and the wafer layout, the pixels constituting the image are equivalent to the non-inspection The brightness value of the pixels of the area is replaced by the brightness value of the reference image to generate the inspection image; and The inspection image is compared with the reference image, and the inspection target part is inspected.
根據此晶圓外觀檢查裝置及方法, 即便為外緣形狀在每一拍攝位置不同之不完整晶片,亦可相應於拍攝位置,進行動態的遮罩處理,產生檢查圖像,並將檢查圖像與基準圖像進行比較,而進行所期望之檢查。 [發明之效果]According to the wafer appearance inspection device and method, Even if it is an incomplete chip whose outer edge shape is different at each shooting position, it can also perform dynamic mask processing corresponding to the shooting position to generate an inspection image, and compare the inspection image with the reference image to perform all Expectation check. [Effects of Invention]
本發明即便在晶圓上存在跨檢查區域及非檢查區域而形成之不完整晶片,但只要是晶圓之檢查區域則進行以完整晶片為準之檢查,可對於晶圓之檢查區域整體獲得所期望之檢查結果,亦可防止處理時間增加。In the present invention, even if there are incomplete wafers formed across the inspection area and the non-inspection area on the wafer, as long as the inspection area of the wafer is inspected based on the complete wafer, the entire inspection area of the wafer can be obtained. Expected inspection results can also prevent processing time from increasing.
以下,針對用於實施本發明之形態,一面利用圖一面進行說明。此外,在以下之說明中,將正交座標系之3軸設為X、Y、Z,將水平方向表現為X方向、Y方向,將與XY平面垂直之方向(即重力方向)表現為Z方向。又,Z方向將與重力相反之方向表現為上,將重力作用之方向表現為下。又,將以Z方向為中心軸旋轉之方向設為θ方向。Hereinafter, the mode for implementing the present invention will be described with reference to the drawings. In addition, in the following description, the three axes of the orthogonal coordinate system are X, Y, Z, the horizontal direction is expressed as the X direction and Y direction, and the direction perpendicular to the XY plane (ie, the direction of gravity) is expressed as Z direction. In addition, the Z direction represents the direction opposite to gravity as upward, and the direction of gravity as downward. Also, let the direction of rotation with the Z direction as the central axis be the θ direction.
圖1係顯示將本發明具現化之形態之一例之整體構成的概略圖。在圖1中概略地顯示構成本發明之晶圓外觀檢查裝置1之各部。Fig. 1 is a schematic diagram showing the overall structure of an example of the embodiment of the present invention. FIG. 1 schematically shows the various parts constituting the wafer
晶圓外觀檢查裝置1拍攝形成於晶圓W上之器件晶片C之重複外觀圖案之檢查對象部位,與基準圖像Pf進行比較,而進行該器件晶片C之檢查。The wafer
具體而言,晶圓外觀檢查裝置1一面逐次變更攝像場所,一面拍攝檢查對象部位,對拍攝到之圖像Ps進行處理,產生檢查圖像Pk,藉由將檢查圖像Pk與基準圖像Pf進行比較,而遍及晶圓W全面,進行在器件晶片C之電路圖案是否無短路或斷線等、或是否未附帶異物或瑕疵等所期望之檢查。晶圓外觀檢查裝置1具備:晶圓保持部2、攝像部3、相對移動部4、晶片布局登錄部5、基準圖像登錄部6、圖像處理部7、及控制部CN等。Specifically, the wafer
晶圓保持部2保持晶圓W。具體而言,晶圓保持部2對晶圓W自下表面側一面保持水平狀態一面予以支撐。更具體而言,晶圓保持部2具備上表面水平之載置台20。載置台20在與晶圓W接觸之部分設置有槽部及孔部,該等槽部及孔部經由切換閥等與真空泵等之負壓產生機構連接。而且,晶圓保持部2藉由將該等槽部及孔部切換為負壓狀態或大氣釋放狀態,而可保持晶圓W或解除保持。The
攝像部3拍攝包含檢查對象部位之圖像Ps。此處,所謂包含檢查對象部位之圖像Ps係包含成為檢查對象之器件晶片C之重複外觀圖案之一部分或全部之部位而拍攝到之圖像,係指將每一器件晶片C之檢查對象部位分割而拍攝到之圖像、或拍攝到包含1個或複數個器件晶片C之檢查對象部位之寬廣之範圍(攝像區域F)之圖像。The
具體而言,因器件晶片C之排列(個數或節距等)及所要求之檢查精度等就每一檢查類型不同,而以攝像部3拍攝之範圍(即攝像區域)之尺寸及位置、間隔等與各個檢查類型相適應地登錄。
更具體而言,攝像部3具備:鏡筒30、照明部31、半反射鏡32、複數個物鏡33a、33b、旋轉器機構34、及攝像相機35等。Specifically, because the arrangement (number or pitch, etc.) of the device chips C and the required inspection accuracy are different for each inspection type, the size and position of the range (ie, the imaging area) photographed by the
鏡筒30以特定之姿勢將照明部31、半反射鏡32、物鏡33a、33b、旋轉器機構34、攝像相機35等固定,對照明光及觀察光予以導光。鏡筒30經由連結金屬件等(未圖示)安裝於裝置框架1f。The
照明部31放出拍攝所需之照明光L1。具體而言,照明部31可例示雷射二極體或金屬鹵素燈、氙氣燈、LED照明等。The
半反射鏡32使自照明部31放出之照明光L1反射而朝晶圓W側照射,且使自晶圓W側入射之光(反射光、散射光)L2朝攝像相機35側通過。The
物鏡33a、33b使工件W上之攝像區域之像以互不相同之特定之觀察倍率在攝像相機35之攝像元件36成像。The
旋轉器機構34使用或切換物鏡33a、33b之任一者。具體而言,旋轉器機構34基於手動或來自外部之信號控制,按每特定之角度旋轉及靜止。The
攝像相機35拍攝工件W上之攝像區域F,取得在攝像元件36成像之圖像。取得之圖像Ps作為映像信號及映像資料被輸出至外部,由圖像處理部7予以處理而產生檢查圖像Pk。The
相對移動部4使晶圓保持部2與攝像部3相對移動。具體而言,相對移動部4具備X軸滑件41、Y軸滑件42、及旋轉機構43而構成。The
X軸滑件41安裝於裝置框架1f上,使Y軸滑件42在X方向以任意之速度移動,且在任意之位置靜止。具體而言,X軸滑件係由在X方向延伸之一對軌道、在該軌道上移動之滑件部、及使滑件部移動及靜止之滑件驅動部構成。滑件驅動部可包含:藉由來自控制部CN之信號控制而旋轉、靜止之伺服馬達或脈衝馬達與滾珠螺桿機構組合而成者,或線性馬達機構等。又,X軸滑件41中具備用於檢測滑件部之當前位置及移動量之編碼器。此外,該編碼器可例示在被稱為線性標度尺之直線狀之構件以特定節距刻出細小之凹凸者、或檢測使滾珠螺桿旋轉之馬達之旋轉角度的旋轉編碼器等。The X-axis slider 41 is installed on the
Y軸滑件42基於自控制部CN輸出之控制信號,使旋轉機構43在Y方向以任意之速度移動,且在任意之位置靜止。具體而言,Y軸滑件係由在Y方向延伸之一對軌道、在該軌道上移動之滑件部、及使滑件部移動及靜止之滑件驅動部構成。滑件驅動部可包含:藉由來自控制部CN之信號控制而旋轉、靜止之伺服馬達或脈衝馬達與滾珠螺桿機構組合而成者,或線性馬達機構等。又,在Y軸滑件42具備用於檢測滑件部之當前位置及移動量之編碼器。此外,該編碼器可例示在被稱為線性標度尺之直線狀之構件以特定節距刻出細小之凹凸者、或檢測使滾珠螺桿旋轉之馬達之旋轉角度之旋轉編碼器等。The Y-
旋轉機構43使載置台20在θ方向以任意之速度旋轉,且以任意之角度靜止。具體而言,旋轉機構43可例示藉由來自直驅馬達等之外部機器之信號控制而以任意之角度旋轉/靜止者。在旋轉機構43之旋轉之側之構件之上,安裝晶圓保持部2之載置台20。The
相對移動部4因具有此種構成,而可在保持著成為檢查對象之晶圓W之狀態下,使晶圓W相對於攝像部3在XYθ方向分別獨立地或複合地以特定之速度或角度相對移動,或在任意之位置、角度靜止。Due to the structure of the relative moving
圖2係顯示將本發明具現化之形態之一例之拍攝情形的概念圖。在圖2中顯示一面使攝像部3之攝像相機35相對於晶圓W在箭頭Vs所示之方向相對移動,逐次變更在晶圓W上分開配置之複數個器件晶片C(2,2)~C(5,2)之攝像場所,而一面拍攝檢查對象部位之情形。此外並圖示在當前時刻,以攝像相機35拍攝包含器件晶片C(4,2)之檢查對象部位之攝像區域F之情形。Fig. 2 is a conceptual diagram showing an example of a shooting situation in which the present invention is realized. FIG. 2 shows that the
圖3係顯示將本發明具現化之形態之一例之器件晶片C各者之位置關係的俯視圖。在圖3中顯示形成於某一檢查類型之晶圓W上之器件晶片C之重複外觀圖案之配置影像,且例示配置有形成於晶圓W之檢查區域Ri內之完整晶片Cn、及跨檢查區域Ri及非檢查區域Rn而形成之不完整晶片Cb之情形。FIG. 3 is a plan view showing the positional relationship of each of the device wafer C as an example of the embodiment of the present invention. 3 shows the arrangement image of the repeated appearance pattern of the device wafer C formed on the wafer W of a certain inspection type, and exemplifies the arrangement of the complete wafer Cn formed in the inspection area Ri of the wafer W and the cross inspection In the case of an incomplete wafer Cb formed by the region Ri and the non-inspection region Rn.
晶片布局登錄部5登錄晶片布局,該晶片布局係規定相對於晶圓W之基準姿勢及基準位置的該晶圓之檢查區域Ri及非檢查區域Rn之位置資訊、以及器件晶片C之配置資訊。The chip
此外,於晶片布局中,將使晶圓W之缺口Wk朝向正下方之狀態設為基準姿勢,將該姿勢下之晶圓W之中心設為XY方向之基準位置(亦稱為原點),而規定檢查區域Ri之外緣(即與非檢查區域Rn之邊界)位於半徑幾毫米之位置(即位置資訊)、及器件晶片C之重複外觀圖案之縱橫排列及節距、偏移資訊等(即配置資訊)。In addition, in the chip layout, the state where the notch Wk of the wafer W faces directly below is set as the reference posture, and the center of the wafer W in this posture is set as the reference position (also referred to as the origin) in the XY direction. It is stipulated that the outer edge of the inspection area Ri (that is, the boundary with the non-inspection area Rn) is located at a position of a few millimeters in radius (that is, position information), and the vertical and horizontal arrangement and pitch, offset information of the repeated appearance pattern of the device chip C ( That is, configuration information).
具體而言,在晶片布局登錄部5中,登錄就每一檢查類型所規定晶片布局之資料。Specifically, in the wafer
基準圖像登錄部6登錄基準圖像Pf。The reference
此外,基準圖像Pf係表示形成於晶圓W上之器件晶片C之重複外觀圖案為正常狀態之基準。具體而言,基準圖像Pf係用於與拍攝到之檢查圖像Ps進行比較,而針對各像素或像素群進行下述判定之基準者,即:若亮度值之差分或方差值等在預設之範圍內則判定為正常,若在該範圍外則判定為異常。更具體而言,基準圖像Pf可例示:代表預先選定之良品圖像之1個圖像、或預先選定複數個良品圖像並將其等平均化之圖像、基於良品學習法而產生之圖像等。In addition, the reference image Pf is a reference indicating that the repeated appearance pattern of the device wafer C formed on the wafer W is in a normal state. Specifically, the reference image Pf is used for comparison with the photographed inspection image Ps, and for each pixel or pixel group, the following determination is made, that is, if the difference or variance of the brightness value is equal to If it is within the preset range, it is judged as normal, and if it is outside the range, it is judged as abnormal. More specifically, the reference image Pf can be exemplified: an image representing a preselected good product image, or an image that is preselected and averaged among a plurality of good product images, and is generated based on the good product learning method Images etc.
具體而言,在基準圖像登錄部6中,就每一檢查類型登錄有基準圖像Pf之資料。Specifically, in the reference
圖4係顯示將本發明具現化之形態之一例之圖像Ps、基準圖像Pf、檢查圖像Pk、檢查圖像Pk與基準圖像Pf之差分之影像的圖像圖。 在圖4(a)中例示拍攝到不完整晶片Cb之圖像Ps之影像,在該圖像Ps中包含電路圖案及檢測對象之缺陷X。 在圖4(b)中例示基準圖像Pf之影像。 在圖4(c)中例示檢查圖像Pk之影像。 在圖4(d)中例示檢查圖像Pk與基準圖像Pf之差分之影像。 此外,各圖像Ps、Pf、Pk顯示由縱橫7×7之矩陣狀之像素構成之例。又,作為缺陷X,例示在電路圖案上附著異物者。4 is an image diagram showing an image Ps, a reference image Pf, an inspection image Pk, and an image of the difference between the inspection image Pk and the reference image Pf as an example of the embodiment of the present invention. FIG. 4(a) illustrates an image of an image Ps of an incomplete wafer Cb, and the image Ps includes a circuit pattern and a defect X of the inspection object. The image of the reference image Pf is illustrated in FIG. 4(b). The image of the inspection image Pk is illustrated in FIG. 4(c). Fig. 4(d) illustrates an image of the difference between the inspection image Pk and the reference image Pf. In addition, each of the images Ps, Pf, and Pk shows an example in which pixels are formed in a matrix of 7×7 in vertical and horizontal directions. In addition, as the defect X, a foreign matter adhered to the circuit pattern is exemplified.
圖5係顯示將本發明具現化之形態之一例之圖像Ps、基準圖像Pf、檢查圖像Pk之各像素之亮度值、以及檢查圖像Pk與基準圖像Pf之亮度值之差分之影像的圖像圖。此外,圖4(a)~(d)之影像與圖5(a)~(d)所示之各像素之亮度值之位置關係分別對應。 在圖5(a)中例示拍攝到不完整晶片Cb之圖像Ps(包含電路圖案及檢測對象之缺陷X)之各像素之亮度值之影像。 在圖5(b)中例示基準圖像Pf之各像素之亮度值之影像。 在圖5(c)中例示檢查圖像Pk之各像素之亮度值之影像。 在圖5(d)中例示檢查圖像Pk與基準圖像Pf之亮度值之差分之影像。Fig. 5 shows the image Ps, the reference image Pf, the brightness value of each pixel of the inspection image Pk, and the difference between the brightness values of the inspection image Pk and the reference image Pf of an example of the embodiment of the present invention The image map of the image. In addition, the images in Figs. 4(a) to (d) correspond to the positional relationships of the brightness values of the pixels shown in Figs. 5(a) to (d), respectively. Fig. 5(a) illustrates an image of the brightness value of each pixel in the image Ps of the incomplete chip Cb (including the circuit pattern and the defect X of the inspection object). The image of the brightness value of each pixel of the reference image Pf is illustrated in FIG. 5(b). The image of the brightness value of each pixel of the inspection image Pk is illustrated in FIG. 5(c). FIG. 5(d) illustrates an image of the difference between the luminance value of the inspection image Pk and the reference image Pf.
圖像處理部7對由攝像部3拍攝到之圖像Ps進行處理。具體而言,圖像處理部7具備動態遮罩處理部71、及比較檢查部72等。The
動態遮罩處理部71對於拍攝到跨檢查區域Ri及非檢查區域Rn而形成之不完整晶片Cb之圖像Ps,將構成圖像Ps之像素中之相當於非檢查區域Rn之像素(以虛線Y表示之部位)之亮度值,基於拍攝到圖像Ps之晶圓W上之位置資訊及晶片布局,置換處理為基準圖像Pf之亮度值,並產生檢查圖像Pk。The dynamic
具體而言,取得拍攝到圖像Ps時之晶圓W與攝像部3之相對位置,將該位置資訊與晶片布局對照,判別拍攝到之圖像Ps內之哪一像素為位於檢查區域Ri之像素、或位於非檢查區域Rn之像素。而且,針對位於非檢查區域Rn之像素(以虛線Y表示之部位),置換處理為基準圖像Pf之對應之像素之亮度值,並產生檢查圖像Pk。此時,圖像Ps內之未覆蓋非檢查區域Rn之像素(亦稱為檢查對象像素)之亮度值被交接至檢查圖像Pk。即,若在該檢查對象像素存在缺陷X,則在檢查圖像Pk中反映拍攝到缺陷X之亮度值。Specifically, the relative position of the wafer W and the
比較檢查部72將由動態遮罩處理部71產生之檢查圖像Pk與基準圖像Pf進行比較,而對於檢查對象部位進行檢查。具體而言,比較檢查部72將包含器件晶片C之重複外觀圖案之檢查對象部位之檢查圖像Pk與基準圖像Pf之對應之像素彼此進行比較,針對各像素及像素群,若亮度值之差分或方差值等在預設之範圍內則判定為正常,若在該範圍外則判定為異常。The
因而,在比較檢查部72中將檢查圖像Pk與基準圖像Pf進行比較處理,藉由提取亮度值之差分位於基準範圍外之部位,而可檢測缺陷X。Therefore, the inspection image Pk is compared with the reference image Pf in the
此外,除上文以外,還根據需要,圖像處理部7具備下述功能,即:將分割圖像接合,或自包含邊際之整體圖像之中提取(亦稱為校正)檢查所需之部位,或進行各像素之亮度值之修正,或是進行圖像Ps之彎曲修正等,抑或進行運算處理等。In addition, in addition to the above, the
本發明之基準圖像登錄部6、晶片布局登錄部5、圖像處理部7係由具備圖像處理功能之電腦CP(即硬體)、及其執行程式等(即軟體)構成。更具體而言,晶片布局登錄部5及基準圖像登錄部6係由電腦CP之記憶部(暫存器、記憶體等)或記錄媒體(HDD、SSD等)等之一部分構成,圖像處理部7係由電腦CP之圖像處理部(所謂之GPU)構成。The reference
電腦CP例如擔負如以下之功能及作用: ・登錄每一檢查類型之攝像倍率及攝像位置、攝像路徑T、攝像間隔(節距、時間間隔)、給送速度等之資訊(所謂之檢查步序) ・登錄每一檢查類型之檢查條件(檢查對象部位之亮度值及方差值等之正常範圍等) ・與使用者介面(鍵盤、SW、監視器等)連接,進行各種資訊之輸入輸出 ・與控制部CN或外部之主電腦等連接,進行信號或資料之輸入輸出 此外,每一檢查類型之檢查步序及檢查條件亦被稱為處方資訊、檢查處方。The computer CP is responsible for the following functions and functions, for example: ・Registration of the imaging magnification and imaging position, imaging path T, imaging interval (pitch, time interval), feeding speed, etc. of each inspection type (the so-called inspection procedure) ・Register the inspection conditions for each inspection type (the normal range of the brightness value and variance value of the inspection target part, etc.) ・Connect to the user interface (keyboard, SW, monitor, etc.) for input and output of various information ・Connect to the control unit CN or external host computer, etc., for signal or data input and output In addition, the inspection procedures and inspection conditions of each inspection type are also called prescription information and inspection prescriptions.
控制部CN例如擔負如以下之功能及作用:
・對晶圓保持部2,輸出保持/解除晶圓W之信號
・控制旋轉器機構34,切換所使用之物鏡(攝像倍率)
・對照明部31輸出發光觸發
・對攝像相機35輸出攝像觸發
・相對移動部4之驅動控制:監視X軸滑件41、Y軸滑件42、旋轉機構43之當前位置,且輸出驅動用信號
・將相對移動部4(X軸滑件41、Y軸滑件42、旋轉機構43)之當前位置資訊輸出至電腦CP
・基於檢查處方控制各部The control unit CN is responsible for the following functions and roles, for example:
・To
此外,自控制部9向攝像部3輸出攝像觸發,可例示如下述之方式:
・使攝像部3在X方向進行掃描移動,並且每移動特定距離便使照明光L1進行極短時間發光(所謂之頻閃發光)。
・或,使攝像部3移動至特定位置並使其靜止,照射照明光L1而進行攝像(所謂之步進重複式)。In addition, the output of the imaging trigger from the control unit 9 to the
又,所謂攝像觸發意指對於攝像相機35及圖像處理部7之圖像擷取入指示、照明光L1之發光指示等。具體而言,作為攝像觸發,設為(情況1)在以攝像相機35可拍攝之時間(所謂之曝光時間)之期間,使照明光L1頻閃發光,或(情況2)在照射照明光L1之時間內進行攝像。或,攝像觸發並不限定於對於攝像相機35之指示,可為(情況3)對於取得圖像之圖像處理裝置之圖像擷取入指示。如此,亦可對應於自攝像相機35逐次輸出映像信號或映像資料之形態。In addition, the "imaging trigger" refers to an image capture instruction to the
更具體而言,控制部CN係由電腦或可程式化邏輯控制器等(即硬體)、及其執行程式等(即軟體)構成。More specifically, the control unit CN is composed of a computer or a programmable logic controller, etc. (ie, hardware), and an executable program, etc. (ie, software).
[檢查流程]
圖6係將本發明具現化之形態之一例之流程圖。在圖6中,作為一系列之流程,按每一步驟顯示使用晶圓外觀檢查裝置1拍攝、檢查配置於晶圓W之器件晶片C之檢查區域Ri及非檢查區域Rn之步序。[Check flow]
Fig. 6 is a flow chart showing an example of the embodiment of the present invention. In FIG. 6, as a series of processes, the steps of using the wafer
在檢查前,預先登錄規定相對於晶圓W之基準姿勢及基準位置的該晶圓W之檢查區域Ri及非檢查區域Rn的晶片布局(步驟s11),且預先登錄基準圖像Pf(步驟s12)。且,設定檢查處方,決定晶圓W之檢查模式、順序(步驟s13)。Before the inspection, the wafer layout that defines the inspection area Ri and the non-inspection area Rn of the wafer W relative to the reference posture and reference position of the wafer W is registered in advance (step s11), and the reference image Pf is registered in advance (step s12 ). In addition, the inspection recipe is set, and the inspection mode and sequence of the wafer W are determined (step s13).
其次,將晶圓W載置於晶圓外觀檢查裝置1之載置台20(步驟s21),向形成於晶圓W上之基準遮罩(未圖示)之讀取位置移動,進行對準(步驟s22)。Next, the wafer W is placed on the mounting table 20 of the wafer appearance inspection apparatus 1 (step s21), and it is moved to the reading position of the reference mask (not shown) formed on the wafer W to perform alignment ( Step s22).
一面使晶圓W與攝像機構3相對移動,一面拍攝包含檢查對象部位之圖像Ps(步驟s23),且對拍攝到之圖像Ps進行以下之處理。While the wafer W and the
首先,對於拍攝到跨檢查區域Ri及非檢查區域Rn而形成之不完整晶片Cb之圖像Ps,基於該圖像Ps被拍攝到之晶圓W上之位置資訊及晶片布局,將構成該圖像Ps之像素中相當於非檢查區域Rn之像素之亮度值置換處理為基準圖像Pf之亮度值,而產生檢查圖像Pk(步驟s31)。First, for the image Ps of the incomplete wafer Cb formed across the inspection area Ri and the non-inspection area Rn, the image Ps will be constructed based on the position information on the wafer W where the image Ps is shot and the wafer layout. The luminance value of the pixel corresponding to the non-inspection area Rn among the pixels of the image Ps is replaced by the luminance value of the reference image Pf, and the inspection image Pk is generated (step s31).
而後,將檢查圖像Pk與基準圖像Pf進行比較,對檢查對象部位進行檢查(步驟s32)。具體而言,將檢查圖像Pk與基準圖像Pf之對應之像素彼此進行比較,針對各像素或像素群進行判定,若亮度值之差分或方差值等在預設之範圍內則判定為正常,若在該範圍外則判定為異常。而且,藉由提取亮度值之差分位於基準範圍外之部位,而檢測缺陷X。Then, the inspection image Pk is compared with the reference image Pf, and the inspection target part is inspected (step s32). Specifically, the corresponding pixels of the inspection image Pk and the reference image Pf are compared with each other, and the determination is made for each pixel or pixel group, and if the difference or variance value of the brightness value is within a preset range, it is determined as Normal, if it is outside this range, it is judged to be abnormal. In addition, the defect X is detected by extracting the position where the difference of the brightness value is outside the reference range.
而後,對於預先規定之全部檢查對象部位,判定攝像、檢查是否結束(步驟s41),若未結束,則繼續進行攝像、檢查。另一方面,若攝像、檢查結束,則朝裝置外送出晶圓W(步驟s42)。Then, for all predetermined inspection target parts, it is determined whether the imaging and inspection are completed (step s41), and if not, the imaging and inspection are continued. On the other hand, when the imaging and inspection are completed, the wafer W is sent out of the apparatus (step s42).
而後,判定是否有下一晶圓W(步驟s43),若有下一個要檢查之晶圓W,則重複上述之步驟s21~s43。另一方面,若無下一晶圓W,則結束一系列之流程。Then, it is determined whether there is the next wafer W (step s43), and if there is the next wafer W to be inspected, the above steps s21 to s43 are repeated. On the other hand, if there is no next wafer W, a series of processes are ended.
根據本發明之晶圓外觀檢查裝置1及檢查方法,即便在晶圓上W存在跨檢查區域Ri及非檢查區域Rn而形成之不完整晶片Cb,亦可根據拍攝位置進行動態的遮罩處理,產生檢查圖像Kp,且將檢查圖像Kp與基準圖像Kf進行比較,而進行期望之檢查。此時,即便為不完整晶片Cb,但只要為晶圓W之檢查區域Ri,則進行以完整晶片Cn為準之檢查,可對於晶圓W之檢查區域Ri整體獲得所期望之檢查結果。又,無須對於疑似缺陷進行特別之處理。即,無論是完整晶片Cn還是不完整晶片Cb,均可對於晶圓W之檢查區域Ri整體獲得所期望之檢查結果,亦可防止處理時間增加。According to the wafer
[變化例] 此外,在上文中,作為檢查之具體例,顯示檢測在電路圖案上附著異物之缺陷X之構成、步序。然而,在將本發明具現化上,檢查對象不僅為異物之附著,還決定是否無短路或斷線等、或是否未附帶瑕疵等適宜項目,只要決定拍攝條件或檢查條件等即可。 此外,在上文中,作為將本發明具現化之步序,顯示圖6,且例示以晶片布局之登錄(步驟s11)、基準圖像Pf之登錄(步驟s12)、檢查處方之設定(步驟s13)之順序執行登錄、設定之步序,但可以其以外之順序執行。例如,可先於晶片布局之登錄,進行基準圖像Pf之登錄,亦可先於檢查處方之設定而進行。[Change example] In addition, in the above, as a specific example of inspection, the structure and procedure for detecting the defect X of foreign matter attached to the circuit pattern are shown. However, in realizing the present invention, the inspection target is not only the adhesion of foreign matter, but also whether there is no short circuit or disconnection, or whether there is no defect or other suitable items, it is only necessary to determine the shooting conditions or inspection conditions. In addition, in the above, as a procedure for realizing the present invention, FIG. 6 is shown, and the registration of the chip layout (step s11), the registration of the reference image Pf (step s12), and the setting of the inspection prescription (step s13) are shown as examples. ) Is executed in the order of registration and setting, but it can be executed in other order. For example, the registration of the reference image Pf can be performed prior to the registration of the chip layout, or it can be performed prior to the setting of the inspection prescription.
此外,在上文中顯示攝像部3之攝像相機35之拍攝範圍設定為包含1個器件晶片C之檢查對象部位之攝像區域F之例。然而,攝像相機35之拍攝範圍可將每一器件晶片C之檢查對象部位分割,亦可設定為包含複數個器件晶片C之檢查對象部位之寬廣之範圍。In addition, the above shows that the imaging range of the
1:晶圓外觀檢查裝置
1f:裝置框架
2:晶圓保持部
3:攝像部
4:相對移動部
5:晶片布局登錄部
6:基準圖像登錄部
7:圖像處理部
20:載置台
30:鏡筒
31:照明部
32:半反射鏡
33a,33b:物鏡
34:旋轉器機構
35:攝像相機
36:攝像元件
41:X軸滑件
42:Y軸滑件
43:旋轉機構
71:動態遮罩處理部
72:比較檢查部
C:器件晶片
C(2,2)~C(5,2):器件晶片
Cb:不完整晶片
CN:控制部
Cn:完整晶片
CP:電腦
F:攝像區域(視野)
L1:照明光
L2:自晶圓側入射之光(反射光、散射光)
Pf:基準圖像
Pk:檢查圖像(處理後)
Ps:檢查圖像(處理前)
Ri:檢查區域
Rn:非檢查區域
T:拍攝路徑
Vs:箭頭
W:晶圓/工件
Wk:缺口
X:缺陷/軸/方向
Y:虛線/軸/方向
θ:方向1: Wafer
圖1係顯示將本發明具現化之形態之一例之整體構成的概略圖。 圖2係顯示將本發明具現化之形態之一例之拍攝之樣態的概念圖。 圖3係顯示將本發明具現化之形態之一例之器件晶片C各者之位置關係的俯視圖。 圖4(a)~(d)係顯示將本發明具現化之形態之一例之圖像Ps、基準圖像Pf、檢查圖像Pk、檢查圖像Pk與基準圖像Pf之差分之影像的圖像圖。 圖5(a)~(d)係顯示將本發明具現化之形態之一例之圖像Ps、基準圖像Pf、檢查圖像Pk之各像素之亮度值、以及檢查圖像Pk與基準圖像Pf之亮度值之差分之影像的圖像圖。 圖6係將本發明具現化之形態之一例之流程圖。Fig. 1 is a schematic diagram showing the overall structure of an example of the embodiment of the present invention. Fig. 2 is a conceptual diagram showing the shooting state of an example of the embodiment of the present invention. FIG. 3 is a plan view showing the positional relationship of each of the device wafer C as an example of the embodiment of the present invention. 4(a) to (d) are diagrams showing the image Ps, the reference image Pf, the inspection image Pk, and the difference between the inspection image Pk and the reference image Pf of an example of the embodiment of the present invention Like the picture. Figures 5 (a) to (d) show an example of the embodiment of the present invention, the image Ps, the reference image Pf, the brightness value of each pixel of the inspection image Pk, and the inspection image Pk and the reference image The image diagram of the image of the difference of the brightness value of Pf. Fig. 6 is a flow chart showing an example of the embodiment of the present invention.
1:晶圓外觀檢查裝置 1: Wafer appearance inspection device
1f:裝置框架 1f: device frame
2:晶圓保持部 2: Wafer holding part
3:攝像部 3: Camera department
4:相對移動部 4: Relative movement part
5:晶片布局登錄部 5: Chip layout registration department
6:基準圖像登錄部 6: Reference image registration department
7:圖像處理部 7: Image Processing Department
20:載置台 20: Mounting table
30:鏡筒 30: lens barrel
31:照明部 31: Lighting Department
32:半反射鏡 32: Half mirror
33a,33b:物鏡 33a, 33b: objective lens
34:旋轉器機構 34: Rotator mechanism
35:攝像相機 35: video camera
36:攝像元件 36: image sensor
41:X軸滑件 41: X-axis slider
42:Y軸滑件 42: Y-axis slider
43:旋轉機構 43: Rotating mechanism
71:動態遮罩處理部 71: Dynamic mask processing section
72:比較檢查部 72: Comparative Inspection Department
C:器件晶片 C: Device wafer
CN:控制部 CN: Control Department
CP:電腦 CP: Computer
F:攝像區域(視野) F: Camera area (field of view)
L1:照明光 L1: Illumination light
L2:自晶圓側入射之光(反射光、散射光) L2: Light incident from the wafer side (reflected light, scattered light)
Pf:基準圖像 Pf: reference image
Pk:檢查圖像(處理後) Pk: Check the image (after processing)
Ps:檢查圖像(處理前) Ps: Check the image (before processing)
W:晶圓/工件 W: Wafer/workpiece
θ:方向 θ: direction
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JP2019152538A JP7293046B2 (en) | 2019-08-23 | 2019-08-23 | Wafer visual inspection apparatus and method |
JP2019-152538 | 2019-08-23 |
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