TW202105474A - 磊晶成長裝置及磊晶晶圓的製造方法 - Google Patents

磊晶成長裝置及磊晶晶圓的製造方法 Download PDF

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TW202105474A
TW202105474A TW109119457A TW109119457A TW202105474A TW 202105474 A TW202105474 A TW 202105474A TW 109119457 A TW109119457 A TW 109119457A TW 109119457 A TW109119457 A TW 109119457A TW 202105474 A TW202105474 A TW 202105474A
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semiconductor wafer
epitaxial
growth device
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epitaxial growth
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胡盛珀
楢原和宏
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日商Ｓｕｍｃｏ股份有限公司
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Abstract

本發明的課題係在於提供不會使預熱環破損，而可抑制預熱環與下部襯墊之間的發塵的磊晶成長裝置。 本發明的解決手段係在具備：腔體；配置在腔體內壁的環狀的上部襯墊及下部襯墊：設在腔體內部，用於載置半導體晶圓的基座；及載置在突出下部襯墊26的開口部的支持部26a上，同時配置在基座的外周的預熱環60的磊晶成長裝置，其中預熱環60，構成為在半導體晶圓W被搬入腔體內部到載置在基座4上的搬送途徑，在半導體晶圓W會通過的區域的正上的至少一部分的區域，不以支持部26a支持。

Description

磊晶成長裝置及磊晶晶圓的製造方法
本發明係關於磊晶成長裝置及磊晶晶圓的製造方法。
在代表性的半導體晶圓的矽晶圓上形成矽磊晶層的磊晶矽晶圓，使用於作為製作MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor：金氧半場效電晶體)、DRAM(Dynamic Random Access Memory：動態隨機存取記憶體)等各式各樣的半導體裝置的基板。
圖1係表示在半導體晶圓的表面上氣相成長磊晶層的枚葉式磊晶成長裝置的一例。此圖所示磊晶層成長裝置100，具有：上部圓頂11；下部圓頂12；及圓頂安裝體3的製程腔體10。上部圓頂11及下部圓頂12，係由透明的石英構成，藉由夾具14安裝在圓頂安裝體13。
在上述製程腔體10的內壁，配置有用於保護圓頂安裝體13的環狀上部襯墊15及下部襯墊16，分別以石英構成。然後，在上部襯墊15與下部襯墊16之間，在與製程腔體10相對的位置，設有對製程腔體10內供給反應氣體等等的氣體供給口17及排出未反應氣體等的氣體排放口18。
此外，在製程腔體10的內部，設置有載置半導體晶圓W的基座4。基座4，構成為藉由可轉動的支持軸7的主柱7a聯接的支持臂7b嵌合支持其下面的外周部，與支持臂7b一起旋轉。基座4，其構成係以Carbon graphite(石墨)作為母材，其表面以SiC塗層，在其表面上，形成收容載置半導體晶圓W的柱坑部。
在上述基座4及支持臂7b形成有貫通孔，在各貫通孔插通用於支持半導體晶圓W的背面使之升降的升降針5。升降針5，以升降軸6支持其基端，藉由使升降軸6在上下方向移動而使之升降。
此外，在基座4的外周，配置有用於預熱從氣體供給口17供給載置在基座4上的半導體晶圓W表面的反應氣體的環狀預熱環60。預熱環60，其構成係以Carbon graphite(石墨)作為母材，以碳化矽(SiC)塗層其表面，以突出下部襯墊16的開口部的支持部16a支持。
圖2係表示圖1所示磊晶層成長裝置100的晶圓搬入口附近的圖。再者，晶圓搬入口，將圖1所示磊晶層成長裝置100以上面視時，設在與設有氣體導入口17及氣體排放口18的位置，在周方向大致偏移90∘的位置。
如圖2所示，與磊晶裝置100的製程腔體10鄰接，設有用於將半導體晶圓W送到製程腔體10內部的搬送腔體20。然後，搬送腔體20與製程腔體10，經由略長方體的狹縫構件21連通。
狹縫構件21，區隔成搬送腔體20的內部與製程腔體10的內部的連通路22。此外，在狹縫構件21的搬送腔體20側，設有將製程腔體10內部密閉的狹縫閥23。
半導體晶圓W，如以下載置在基座4上。首先，藉由支持軸7使基座4下降。接著，開啟搬送腔體20內的狹縫閥23之後，將載置在搬送板B上的半導體晶圓W，通過連通路22，從晶圓搬入口24搬入製程腔體10內部，配置在基座4的上方。
接著，藉由升降軸6使升降針5上升，支持半導體晶圓W的背面。之後，使搬送板B從製程腔體10退出，關閉狹縫閥23。然後，藉由支持軸7使基座4上升，將半導體晶圓W載置在基座4上，使基座4上升到既定高度的位置，從氣體導入口17導入反應氣體，在半導體晶圓W的表面上成長磊晶層。
結束磊晶層的成長，將所得磊晶晶圓從製程腔體10搬出時，進行與上述程序相反的程序。
如上所述，預熱環60，係以下部襯墊16的突出部16a支持，惟在該等預熱環60與下部襯墊16，構成的材料不同。因此，將腔體10內升溫或降溫時，在預熱環60與下部襯墊16的突出部16a之間發生起因於熱膨脹係數差的摩擦，而有從該等構件發塵，使粒子附著在半導體晶圓W表面的問題。
伴隨著近幾年的半導體裝置的細微化．高積體化，要求降低結晶缺陷及附著在晶圓表面上的粒子。因此，有需要抑制如上所述的預熱環60與下部襯墊16間的發塵。
因此，在專利文獻1，記載有在預熱環的下部設突出部固定在下部襯墊，在使腔體升溫或降溫時，防止預熱環與下部襯墊間的發塵的技術。 ［先前技術文獻］ ［專利文獻］
［專利文獻1］國際公開第2015/076487號
［發明所欲解決的課題］
但是，在被專利文獻1所記載的技術，在腔體內升溫或降溫時，會有起因於預熱環與下部襯墊之間的熱膨脹係數差的力被負載，而有預熱環破損之虞。
因此，本發明的目標係以提供不會使預熱環破損，而可抑制預熱環與下部襯墊之間的發塵的磊晶成長裝置。 ［用於解決課題的手段］
解決上述課題的本發明，係如下所示。 [1]一種磊晶成長裝置，其特徵在於：其係在半導體晶圓的表面上氣相成長磊晶層的磊晶成長裝置，其具備： 腔體； 配置在上述腔體內壁的環狀的上部襯墊及下部襯墊： 設在上述腔體內部，用於載置上述半導體晶圓的基座；及 載置在突出上述下部襯墊的開口部的支持部上，同時配置在上述基座的外周的預熱環， 上述半導體晶圓，係以上述基座以下降的狀態，從設在上述腔體的晶圓搬入口搬入上述腔體內部，經由上述下部襯墊的支持部及上述預熱環的下方，載置在上述基座上的磊晶成長裝置， 上述預熱環，構成為在上述半導體晶圓被搬入上述腔體內部載置在上述基座上之間的搬送途徑，在上述半導體晶圓會通過的區域的正上的至少一部分的區域，不以上述支持部支持。
[2]如上述[1]之磊晶成長裝置，其中在上述至少一部分的區域，沒有設上述支持部。
[3]如上述[1]之磊晶成長裝置，其中在上述至少一部分的區域，在上述預熱環與上述支持部之間設有空隙。
[4]如上述[1]~[3]之任何一項之磊晶成長裝置，其中上述至少一部分的區域，係將上述磊晶成長裝置以上面視時，上述支持部的全周之中，對上述半導體晶圓的搬送方向的中心角為±10∘~90∘的區域。
[5]如上述[1]~[4]之任何一項之磊晶成長裝置，其中上述至少一部分的區域為所有區域。
[6]一種磊晶晶圓的製造方法，其特徵在於：對上述[1]~[5]之任何一項之磊晶成長裝置供給反應氣體，在半導體晶圓上成長磊晶層，得到磊晶晶圓。
[7]如上述[6]之磊晶晶圓的製造方法，其中上述半導體晶圓為矽晶圓。 ［發明的效果］
根據本發明，不會使預熱環破損，而可抑制預熱環與下部襯墊之間的發塵。
(磊晶層成長裝置) 以下參照圖面，說明關於本發明的磊晶層成長裝置。本發明的磊晶層成長裝置，其特徵在於：其係在半導體晶圓的表面上氣相成長磊晶層的磊晶成長裝置，其具備：腔體；配置在該腔體內壁的環狀的上部襯墊及下部襯墊：設在腔體內部，用於載置半導體晶圓的基座；及載置在突出下部襯墊的開口部的支持部上，同時配置在基座的外周的預熱環。然後，半導體晶圓，係以基座在下降的狀態，從設在腔體的晶圓搬入口搬入腔體內部，經由下部襯墊的支持部及預熱環的下方，載置在基座上地構成。在此，預熱環，係構成為在半導體晶圓被搬入腔體內部，到載置在基座上之間的搬送途徑，在半導體晶圓W會通過的區域的正上的至少一部分的區域，不以上述支持部支持。
圖3係表示先前的磊晶層成長裝置100的預熱環60周邊的構造的示意圖，(a)係沿著晶圓搬送方向的剖面圖，(b)係俯視圖。如圖3(a)所示，環狀預熱環60，其全周以下部襯墊16的支持部16a支持。
然後，如圖3(b)所示，半導體晶圓W，在從磊晶成長裝置100的晶圓搬人口24搬入到載置在基座4上之前的搬送途徑，通過預熱環60的下方。
在如此狀況下，在將腔體10內升溫或降溫時，當預熱環60與下部襯墊16的支持部16a之間發生摩擦而發塵，則通過預熱環60下方的半導體晶圓W的表面，有時會附著微粒。
因此本發明者們，銳意研究抑制上述微粒附著的原因的預熱環60與下部襯墊16的支持部16a之間的發塵的方法。結果，想到在半導體晶圓W從晶圓搬入口24導入到載置在基座4上之前的搬送途徑，在半導體晶圓W通過的區域(以下，有時單稱為「半導體晶圓的通過區域」。)正上的至少一部份區域，構成為預熱環60沒有以下部襯墊16的支持部16a支持，而完成本發明。
圖4係本發明的磊晶層成長裝置的預熱環周邊的構造的一例的示意圖，(a)係沿著晶圓搬送方向的剖面圖，(b)係俯視圖。在圖4(a)所示構成，預熱環60係構成為在所有半導體晶圓W的通過區域的正上的區域，下部襯墊26沒有以支持部26a支持。
圖5係表示圖4(a)所示下部襯墊26。如該圖所示，下部襯墊26，其環狀支持部26a，在所有半導體晶圓W的通過區域的正上的區域並沒有設置。藉此，在半導體晶圓W的通過區域的正上，可防止預熱環60與下部襯墊26的支持部26a之間的發塵。再者，在圖5所示下部襯墊26，支持部26a的全周之中，只有在對半導體晶圓W的搬送方向的中心角±40∘的區域沒有設置。
藉由將下部襯墊26的支持部26a構成為如上所述，如圖4(b)所示，在半導體晶圓W搬送到基座4上時，在搬送途徑的正上，由於不會發生預熱環60與下部襯墊26的支持部26a之間的發塵，故可抑制粒子附著在半導體晶圓W的表面。
此外，在半導體晶圓W的表面上成長磊晶層時，在預熱環60與下部襯墊26之間沉積多晶矽，則在搬送半導體晶圓W時，有時會掉到半導體晶圓W表面，但藉由圖5所示下部襯墊26，可防止上述多晶矽的沉積。
再者，在圖5所示下部襯墊26，係在半導體晶圓W的通過區域的正上的所有區域，預熱環60沒有以支持部26a支持，惟亦可構成為只有一部分的區域，預熱環60沒有以支持部26a支持。
圖6係本發明的磊晶層成長裝置的下部襯墊的其他例。在圖6(a)所示下部襯墊36，環狀支持部36a的全周之中，只有對半導體晶圓W的搬送方向的中心角±15∘的區域沒有設置。以如此之情形，與圖3所示使用先前的下部襯墊16的情形相比，可抑制預熱環60與下部襯墊36之間的發塵，而可抑制粒子附著在半導體晶圓W的表面。此外，與圖5所示下部襯墊26相比，可防止因預熱環60的自重的偏垂(變形)。上述中心角，以±10∘~90∘為佳，以±10∘~45∘為更佳。
此外，在圖6(b)所示的下部襯墊46之中，支持部46a，雖與圖5同樣，在中心角±40∘的部分沒有設置，惟在該範圍，部分設有支持部46a。藉此，與圖5所示下部襯墊26相比，可更穩定地支持預熱環60。
再者，在圖4~6所示下部襯墊26、36、46，俯視時完全去除沒有支持預熱環60的支持部26a、36a，46a的部分，惟未必需要如此構成。
即，亦可如圖7所示下部襯墊56，在其支持部56a的±40∘的區域的表面設凹部56b，在預熱環60與支持部56a之間設空隙。此時，在半導體晶圓W的通過區域的正上，亦可防止預熱環60與下部襯墊56之間的發塵。
此外，可如圖6所示下部襯墊36、46，僅在搬送途徑的上方的區域的一部分的區域，在支持部設凹部。具體而言，在圖8所示下部襯墊66，環狀支持部66a的全周之中，在中心角±15∘的部分設置凹部66b。此外，在圖9所示下部襯墊76，支持部76a，與圖7同樣地在中心角±40∘的部分斷斷續續地設置凹部76b。
如此，預熱環，在半導體晶圓的搬送區域的正上的至少一部分的區域，構成為沒有以下部襯墊的支持部支持，可抑制預熱環與下部襯墊的支持部之間的發塵。
由以上的說明可明瞭，本發明的磊晶層成長裝置，係在支持預熱環的下部襯墊的支持部的構成具有特徵，其他的構成並無限定，可適當地使用先前的構成。
(磊晶晶圓的製造方法) 本發明的磊晶晶圓的製造方法，其特徵在於：對上述本發明的磊晶成長裝置供給反應氣體，在半導體晶圓上成長磊晶層，得到磊晶晶圓。
如上所述，在本發明的磊晶層成長裝置，在半導體晶圓W的通過區域的正上的至少一部分的區域，預熱環，在半導體晶圓的搬送區域的正上的至少一部分的區域，構成為沒有以下部襯墊的支持部支持，而可抑制預熱環與下部襯墊之間的發塵。因此，對上述本發明的磊晶層成長裝置供給反應氣體，在半導體晶圓上形成磊晶層，可製造抑制粒子附著的磊晶晶圓。
磊晶晶圓的基板的半導體晶圓，並無特別限定，可良好地使用矽晶圓，可良好地在矽晶圓上成長矽磊晶層。半導體晶圓的直徑，並無特別限定，可為150mm以上，具體可為200mm、300mm、450mm等。 [產業上的可利性]
根據本發明，由於不會使預熱環破損，而可抑制預熱環與下部襯墊之間的發塵，故有用於半導體晶圓製造業。
4:基座 5:升降針 6:升降軸 7:支持軸 7a:主柱 7b:支持臂 10:製程腔體 11:上部圓頂 12:下部圓頂 13:圓頂安裝體 14:夾具 15:上部襯墊 16,26,36,46,56,66,76:下部襯墊 16a,26a,36a,46a,56a,66a,76a:支持部 17:氣體供給口 18:氣體排放口 20:搬送腔體 21:狹縫材 22:連通路 23:狹縫閥 24:晶圓搬入口 56b,66b,76b:凹部 60:預熱環 100:磊晶成長裝置 B:搬送板 W:半導體晶圓
［圖1］係磊晶成長裝置的一例的示意圖。 ［圖2］係表示在磊晶成長裝置的晶圓搬入口附近的構造的示意圖。 ［圖3］係先前的磊晶層成長裝置的預熱環周邊的構造的示意圖，(a)係沿著晶圓搬送方向的剖面圖，(b)係俯視圖。 ［圖4］係本發明的磊晶層成長裝置的預熱環周邊的構造的一例的示意圖，(a)係沿著晶圓搬送方向的剖面圖，(b)係俯視圖。 ［圖5］係本發明的磊晶層成長裝置的下部襯墊的一例的示意圖。 ［圖6］係本發明的磊晶層成長裝置的下部襯墊的其他例的示意圖。 ［圖7］係本發明的磊晶層成長裝置的下部襯墊的進一步其他例的示意圖。 ［圖8］係本發明的磊晶層成長裝置的下部襯墊的進一步其他例的示意圖。 ［圖9］係本發明的磊晶層成長裝置的下部襯墊的其他例的示意圖。
4:基座
11:上部圓頂
13:圓頂安裝體
14:夾具
26:下部襯墊
26a:支持部
60:預熱環
B:搬送板
W:半導體晶圓

Claims (8)

  1. 一種磊晶成長裝置，其特徵在於：其係在半導體晶圓的表面上氣相成長磊晶層的磊晶成長裝置，其具備： 腔體； 配置在上述腔體內壁的環狀的上部襯墊及下部襯墊： 設在上述腔體內部，用於載置上述半導體晶圓的基座；及 載置在突出上述下部襯墊的開口部的支持部上，同時配置在上述基座的外周的預熱環， 上述半導體晶圓，係以上述基座以下降的狀態，從設在上述腔體的晶圓搬入口搬入上述腔體內部，經由上述下部襯墊的支持部及上述預熱環的下方，載置在上述基座上的磊晶成長裝置， 上述預熱環，構成為在上述半導體晶圓被搬入上述腔體內部載置在上述基座上之間的搬送途徑，在上述半導體晶圓會通過的區域的正上的至少一部分的區域，不以上述支持部支持。
  2. 如請求項1之磊晶成長裝置，其中在上述至少一部分的區域，沒有設上述支持部。
  3. 如請求項1之磊晶成長裝置，其中在上述至少一部分的區域，在上述預熱環與上述支持部之間設有空隙。
  4. 如請求項1至3之任何一項之磊晶成長裝置，其中上述至少一部分的區域，係將上述磊晶成長裝置以上面視時，上述支持部的全周之中，對上述半導體晶圓的搬送方向的中心角為±10∘~90∘的區域。
  5. 如請求項1至3之任何一項之磊晶成長裝置，其中上述至少一部分的區域為所有區域。
  6. 如請求項4之磊晶成長裝置，其中上述至少一部分的區域為所有區域。
  7. 一種磊晶晶圓的製造方法，其特徵在於：對請求項1至6之任何一項之磊晶成長裝置供給反應氣體，在半導體晶圓上成長磊晶層，得到磊晶晶圓。
  8. 如請求項7之磊晶晶圓的製造方法，其中上述半導體晶圓為矽晶圓。
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US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US6383330B1 (en) * 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
JP4348542B2 (ja) * 2004-08-24 2009-10-21 信越半導体株式会社 石英治具及び半導体製造装置
US9890455B2 (en) * 2010-10-29 2018-02-13 Applied Materials, Inc. Pre-heat ring designs to increase deposition uniformity and substrate throughput
DE102011007632B3 (de) * 2011-04-18 2012-02-16 Siltronic Ag Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe
JP5343162B1 (ja) * 2012-10-26 2013-11-13 エピクルー株式会社 エピタキシャル成長装置
KR101539298B1 (ko) * 2013-11-25 2015-07-29 주식회사 엘지실트론 에피택셜 웨이퍼 성장 장치
JP6330941B1 (ja) * 2017-03-07 2018-05-30 株式会社Sumco エピタキシャル成長装置およびプリヒートリングならびにそれらを用いたエピタキシャルウェーハの製造方法
KR102408720B1 (ko) * 2017-06-07 2022-06-14 삼성전자주식회사 상부 돔을 포함하는 반도체 공정 챔버

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DE112020003093T5 (de) 2022-03-10
CN114026273B (zh) 2024-01-09
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