TW202045746A - Methods and systems for coating a steel substrate - Google Patents
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- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
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- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/26—Methods of annealing
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- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
- C21D1/76—Adjusting the composition of the atmosphere
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- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D11/00—Process control or regulation for heat treatments
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
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- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
- C21D9/46—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for sheet metals
- C21D9/48—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for sheet metals deep-drawing sheets
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
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- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
- B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
- B22F2007/047—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method non-pressurised baking of the paste or slurry containing metal powder
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
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- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/22—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces for producing castings from a slip
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/001—Ferrous alloys, e.g. steel alloys containing N
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- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/004—Very low carbon steels, i.e. having a carbon content of less than 0,01%
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C38/02—Ferrous alloys, e.g. steel alloys containing silicon
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- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/04—Ferrous alloys, e.g. steel alloys containing manganese
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- C22C38/12—Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium, or niobium
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Abstract
Description
本發明提供用於鄰接基材或在基材上沉積金屬層之方法及系統。The present invention provides methods and systems for adjoining a substrate or depositing a metal layer on the substrate.
鋼可係鐵及其他元素(包括碳)之合金。當碳係主要合金化元素時,其在鋼中之含量可係約0.002重量%至2.1重量%。非限制性地,鋼中可存在以下元素:碳、錳、磷、硫、矽、氧、氮及鋁。為修改鋼之特徵而添加的合金化元素可包括但不限於:錳、鎳、鉻、鉬、硼、鈦、釩及鈮。Steel can be an alloy of iron and other elements (including carbon). When carbon is the main alloying element, its content in steel can be about 0.002 wt% to 2.1 wt%. Without limitation, the following elements may be present in steel: carbon, manganese, phosphorus, sulfur, silicon, oxygen, nitrogen, and aluminum. The alloying elements added to modify the characteristics of the steel may include but are not limited to: manganese, nickel, chromium, molybdenum, boron, titanium, vanadium and niobium.
不銹鋼可係不易被水腐蝕、生銹(或氧化)或沾污之材料。存在不同等級及表面修整之不銹鋼以適應所給定環境。在鋼之性質及耐腐蝕性均有益之情況下,可使用不銹鋼。Stainless steel can be a material that is not easily corroded, rusted (or oxidized) or contaminated by water. There are different grades and surface finishes of stainless steel to suit the given environment. Stainless steel can be used when the properties and corrosion resistance of steel are beneficial.
本發明提供用於鄰接基材沉積金屬層之系統及方法。該基材可係鋼基材。此種金屬層之實例包括但不限於不銹鋼、矽鋼及噪音振動粗糙度阻尼鋼(noise vibration harshness damping steel)。此類基材可包括(例如)鐵、鉻、鎳、矽、釩、鈦、硼、鎢、鋁、鉬、鈷、錳、鋯及鈮、其氧化物、其氮化物、其硫化物或其任何組合中之一者或多者。系統及基材可產生期望之所得微結構。The present invention provides a system and method for depositing a metal layer adjacent to a substrate. The substrate can be a steel substrate. Examples of such metal layers include, but are not limited to, stainless steel, silicon steel, and noise vibration harshness damping steel. Such substrates may include, for example, iron, chromium, nickel, silicon, vanadium, titanium, boron, tungsten, aluminum, molybdenum, cobalt, manganese, zirconium and niobium, their oxides, their nitrides, their sulfides or their Any combination of one or more. The system and substrate can produce the desired resulting microstructure.
在一個態樣中,本文提供一種用於形成鄰接基材之至少一個金屬層之方法,該方法包括使該基材與包含金屬氧化物、還原金屬劑及金屬轉移活化劑之漿液接觸,以提供鄰接該基材之含金屬層,及退火該基材及該至少一個含金屬層,以使該金屬氧化物及該金屬轉移活化劑經歷金屬熱還原反應以產生該至少一個金屬層及水,其中該水係經該還原金屬劑還原。In one aspect, provided herein is a method for forming at least one metal layer adjacent to a substrate, the method comprising contacting the substrate with a slurry comprising a metal oxide, a reducing metal agent, and a metal transfer activator to provide Adjacent to the metal-containing layer of the substrate, and annealing the substrate and the at least one metal-containing layer so that the metal oxide and the metal transfer activator undergo a metal thermal reduction reaction to generate the at least one metal layer and water, wherein The water system is reduced by the reducing metal agent.
在一些實施例中,該至少一個金屬層具有約ASTM 000至ASTM 30之晶粒尺寸。In some embodiments, the at least one metal layer has a grain size of about ASTM 000 to ASTM 30.
在一些實施例中,該基材包含以下中之至少一者:(i)小於或等於約0.1重量%之碳、(ii)約0.1重量%至3重量%之錳、(iii)小於或等於約1重量%之矽、(iv)小於或等於約0.1重量%之釩、及(v)小於或等於約0.5重量%之鈦。在一些實施例中,該基材包含以下中之至少二者:(i)小於或等於約0.1重量%之碳、(ii)約0.1重量%至3重量%之錳、(iii)小於或等於約1重量%之矽、(iv)小於或等於約0.1重量%之釩、及(v)小於或等於約0.5重量%之鈦。在一些實施例中,該基材包含以下中之至少三者:(i)小於或等於約0.1重量%之碳、(ii)約0.1重量%至3重量%之錳、(iii)小於或等於約1重量%之矽、(iv)小於或等於約0.1重量%之釩、及(v)小於或等於約0.5重量%之鈦。在一些實施例中,該基材包含以下中之至少四者:(i)小於或等於約0.1重量%之碳、(ii)約0.1重量%至3重量%之錳、(iii)小於或等於約1重量%之矽、(iv)小於或等於約0.1重量%之釩、及(v)小於或等於約0.5重量%之鈦。在一些實施例中,該基材包含(i)小於或等於約0.1重量%之碳、(ii)約0.1重量%至3重量%之錳、(iii)小於或等於約1重量%之矽、(iv)小於或等於約0.1重量%之釩、及(v)小於或等於約0.5重量%之鈦。In some embodiments, the substrate includes at least one of the following: (i) less than or equal to about 0.1% by weight of carbon, (ii) about 0.1% to 3% by weight of manganese, (iii) less than or equal to About 1% by weight of silicon, (iv) less than or equal to about 0.1% by weight of vanadium, and (v) less than or equal to about 0.5% by weight of titanium. In some embodiments, the substrate comprises at least two of the following: (i) less than or equal to about 0.1% by weight of carbon, (ii) about 0.1% to 3% by weight of manganese, (iii) less than or equal to About 1% by weight of silicon, (iv) less than or equal to about 0.1% by weight of vanadium, and (v) less than or equal to about 0.5% by weight of titanium. In some embodiments, the substrate includes at least three of the following: (i) less than or equal to about 0.1% by weight of carbon, (ii) about 0.1% to 3% by weight of manganese, (iii) less than or equal to About 1% by weight of silicon, (iv) less than or equal to about 0.1% by weight of vanadium, and (v) less than or equal to about 0.5% by weight of titanium. In some embodiments, the substrate comprises at least four of the following: (i) less than or equal to about 0.1% by weight of carbon, (ii) about 0.1% to 3% by weight of manganese, (iii) less than or equal to About 1% by weight of silicon, (iv) less than or equal to about 0.1% by weight of vanadium, and (v) less than or equal to about 0.5% by weight of titanium. In some embodiments, the substrate includes (i) less than or equal to about 0.1% by weight of carbon, (ii) about 0.1% to 3% by weight of manganese, (iii) less than or equal to about 1% by weight of silicon, (iv) Less than or equal to about 0.1% by weight of vanadium, and (v) less than or equal to about 0.5% by weight of titanium.
在一些實施例中,該金屬層係在約0℃至1000℃之退火溫度下形成。在一些實施例中,該金屬層係在具有低於約10托之水分含量之退火氛圍中形成。在一些實施例中,退火包括以至少約0.1℃/秒之速率加熱該基材。在一些實施例中,退火係在高於約500℃之溫度下進行。在一些實施例中,該方法進一步包括在該退火之後冷卻該基材。In some embodiments, the metal layer is formed at an annealing temperature of about 0°C to 1000°C. In some embodiments, the metal layer is formed in an annealing atmosphere with a moisture content of less than about 10 Torr. In some embodiments, annealing includes heating the substrate at a rate of at least about 0.1°C/sec. In some embodiments, annealing is performed at a temperature higher than about 500°C. In some embodiments, the method further includes cooling the substrate after the annealing.
在一些實施例中,在該退火期間,該基材從鐵氧體轉變成奧氏體。在一些實施例中,該退火之溫度係由鐵氧體轉變成奧氏體之轉變溫度確定。在一些實施例中,添加至少一種奧氏體穩定劑降低該轉變溫度。In some embodiments, during the annealing, the substrate transforms from ferrite to austenite. In some embodiments, the annealing temperature is determined by the transformation temperature of ferrite to austenite. In some embodiments, the addition of at least one austenite stabilizer reduces the transformation temperature.
在一些實施例中,金屬轉移活化劑包含鹵化物、金屬鹵化物、金屬硫化物或氣態物質。在一些實施例中,金屬轉移活化劑包含氫氣。在一些實施例中,該金屬轉移活化劑包含選自由以下組成之群之物質:氯化鎂(MgCl2 )、氯化鐵(II) (FeCl2 )、氯化鈣(CaCl2 )、氯化鋯(IV) (ZrCl4 )、氯化鈦(IV) (TiCl4 )、氯化鈮(V) (NbCl5 )、氯化鈦(III) (TiCl3 )、四氯化矽(SiCl4 )、氯化釩(III) (VCl3 )、氯化鉻(III) (CrCl3 )、三氯矽烷(SiHCl3 )、氯化錳(II) (MnCl2 )、氯化鉻(II) (CrCl2 )、氯化鈷(II) (CoCl2 )、氯化銅(II) (CuCl2 )、氯化鎳(II) (NiCl2 )、氯化釩(II) (VCl2 )、氯化銨(NH4 Cl)、氯化鈉(NaCl)、氯化鉀(KCl)、硫化鉬(MoS)、硫化錳(MnS)、二硫化鐵(FeS2 )、硫化鉻(CrS)、硫化鐵(FeS)、硫化銅(CuS)、硫化鎳(NiS)及其組合。In some embodiments, the metal transfer activator includes a halide, metal halide, metal sulfide, or gaseous substance. In some embodiments, the metal transfer activator includes hydrogen gas. In some embodiments, the metal transfer activator includes a substance selected from the group consisting of magnesium chloride (MgCl 2 ), iron (II) chloride (FeCl 2 ), calcium chloride (CaCl 2 ), zirconium chloride ( IV) (ZrCl 4 ), titanium(IV) chloride (TiCl 4 ), niobium(V) chloride (NbCl 5 ), titanium(III) chloride (TiCl 3 ), silicon tetrachloride (SiCl 4 ), chlorine Vanadium (III) (VCl 3 ), Chromium (III) Chloride (CrCl 3 ), Trichlorosilane (SiHCl 3 ), Manganese (II) Chloride (MnCl 2 ), Chromium (II) Chloride (CrCl 2 ) , Cobalt(II) chloride (CoCl 2 ), copper(II) chloride (CuCl 2 ), nickel(II) chloride (NiCl 2 ), vanadium(II) chloride (VCl 2 ), ammonium chloride (NH 4 Cl), sodium chloride (NaCl), potassium chloride (KCl), molybdenum sulfide (MoS), manganese sulfide (MnS), iron disulfide (FeS 2 ), chromium sulfide (CrS), iron sulfide (FeS), Copper sulfide (CuS), nickel sulfide (NiS) and combinations thereof.
在一些實施例中,該方法進一步包括在該退火之後乾燥該基材。In some embodiments, the method further includes drying the substrate after the annealing.
在一個態樣中,本文提供一種鋼組合物,其包含選自由以下組成之群之構成金屬:i)大於約0.2重量%之鈦、及ii)大於約0.8重量%之錳,其中該鋼組合物具有超過1.8之塑性應變比測量值。在一些實施例中,鋼組合物具有超過2之塑性應變比測量值。In one aspect, provided herein is a steel composition comprising a constituent metal selected from the group consisting of: i) greater than about 0.2% by weight of titanium, and ii) greater than about 0.8% by weight of manganese, wherein the steel composition The object has a measured value of plastic strain ratio exceeding 1.8. In some embodiments, the steel composition has a plastic strain ratio measurement value exceeding 2.
在一些實施例中,鋼組合物在介於約750℃與約1100℃之間的溫度下經歷退火。在一些實施例中,在該退火期間,該鋼組合物從鐵氧體轉變成奧氏體。在一些實施例中,該鋼組合物包含介於約ASTM 000與ASTM 30之間的晶粒尺寸。在一些實施例中,該鋼組合物包含大於約0.2重量%之鈦、及選自以下之兩種或更多種組成元素:i)大於約0.01重量%之碳、ii)大於約0.02重量%之鋁、及iii)不多於約0.004重量%之硫、及iv)小於約0.02重量%之鈮。在一些實施例中,該鋼組合物包含大於約0.8重量%之錳、及選自以下之兩種或更多種組成元素:i)小於約0.01重量%之碳、ii)小於約0.02重量%之鋁、及iii)大於約0.004重量%之硫、及iv)大於約0.02重量%之鈮。In some embodiments, the steel composition undergoes annealing at a temperature between about 750°C and about 1100°C. In some embodiments, during the annealing, the steel composition transforms from ferrite to austenite. In some embodiments, the steel composition includes a grain size between about ASTM 000 and ASTM 30. In some embodiments, the steel composition includes more than about 0.2% by weight of titanium, and two or more constituent elements selected from: i) more than about 0.01% by weight of carbon, ii) more than about 0.02% by weight And iii) not more than about 0.004% by weight of sulfur, and iv) less than about 0.02% by weight of niobium. In some embodiments, the steel composition includes more than about 0.8% by weight of manganese, and two or more constituent elements selected from: i) less than about 0.01% by weight of carbon, ii) less than about 0.02% by weight And iii) more than about 0.004% by weight of sulfur, and iv) more than about 0.02% by weight of niobium.
在另一個態樣中,本文提供一種用於形成鄰接基材之至少一個金屬層之組合物,該組合物包含漿液,該漿液包含金屬氧化物、還原性金屬試劑及金屬轉移活化劑,其中該漿液係經組態以提供鄰接該基材之含金屬層,其中該金屬氧化物及該金屬轉移活化劑係經組態以經歷金屬熱還原反應以產生該至少一個金屬層及水。In another aspect, provided herein is a composition for forming at least one metal layer adjacent to a substrate, the composition comprising a slurry comprising a metal oxide, a reducing metal reagent and a metal transfer activator, wherein the The slurry is configured to provide a metal-containing layer adjacent to the substrate, wherein the metal oxide and the metal transfer activator are configured to undergo a metal thermal reduction reaction to generate the at least one metal layer and water.
在一些實施例中,金屬氧化物係選自由Cr2 O3 、TiO2 、FeCr2 O4 、SiO2 、Ta2 O5 及MgCr2 O4 組成之群。In some embodiments, the metal oxide is selected from the group consisting of Cr 2 O 3 , TiO 2 , FeCr 2 O 4 , SiO 2 , Ta 2 O 5 and MgCr 2 O 4 .
在一些實施例中,還原金屬劑包含選自由鐵、鉻、鎳、矽、釩、鈦、硼、鎢、鋁、鉬、鈷、錳、鋯及鈮組成之群之元素。In some embodiments, the reducing metal agent includes an element selected from the group consisting of iron, chromium, nickel, silicon, vanadium, titanium, boron, tungsten, aluminum, molybdenum, cobalt, manganese, zirconium, and niobium.
在一些實施例中,金屬轉移活化劑包含鹵化物、金屬鹵化物、金屬硫化物或氣態物質。在一些實施例中,金屬轉移活化劑包含氫氣。在一些實施例中,該金屬轉移活化劑包含選自由以下組成之群之物質:氯化鎂(MgCl2 )、氯化鐵(II) (FeCl2 )、氯化鈣(CaCl2 )、氯化鋯(IV) (ZrCl4 )、氯化鈦(IV) (TiCl4 )、氯化鈮(V) (NbCl5 )、氯化鈦(III) (TiCl3 )、四氯化矽(SiCl4 )、氯化釩(III) (VCl3 )、氯化鉻(III) (CrCl3 )、三氯矽烷(SiHCl3 )、氯化錳(II) (MnCl2 )、氯化鉻(II) (CrCl2 )、氯化鈷(II) (CoCl2 )、氯化銅(II) (CuCl2 )、氯化鎳(II) (NiCl2 )、氯化釩(II) (VCl2 )、氯化銨(NH4 Cl)、氯化鈉(NaCl)、氯化鉀(KCl)、硫化鉬(MoS)、硫化錳(MnS)、二硫化鐵(FeS2 )、硫化鉻(CrS)、硫化鐵(FeS)、硫化銅(CuS)、硫化鎳(NiS)及其組合。In some embodiments, the metal transfer activator includes a halide, metal halide, metal sulfide, or gaseous substance. In some embodiments, the metal transfer activator includes hydrogen gas. In some embodiments, the metal transfer activator includes a substance selected from the group consisting of magnesium chloride (MgCl 2 ), iron (II) chloride (FeCl 2 ), calcium chloride (CaCl 2 ), zirconium chloride ( IV) (ZrCl 4 ), titanium(IV) chloride (TiCl 4 ), niobium(V) chloride (NbCl 5 ), titanium(III) chloride (TiCl 3 ), silicon tetrachloride (SiCl 4 ), chlorine Vanadium (III) (VCl 3 ), Chromium (III) Chloride (CrCl 3 ), Trichlorosilane (SiHCl 3 ), Manganese (II) Chloride (MnCl 2 ), Chromium (II) Chloride (CrCl 2 ) , Cobalt(II) chloride (CoCl 2 ), copper(II) chloride (CuCl 2 ), nickel(II) chloride (NiCl 2 ), vanadium(II) chloride (VCl 2 ), ammonium chloride (NH 4 Cl), sodium chloride (NaCl), potassium chloride (KCl), molybdenum sulfide (MoS), manganese sulfide (MnS), iron disulfide (FeS 2 ), chromium sulfide (CrS), iron sulfide (FeS), Copper sulfide (CuS), nickel sulfide (NiS) and combinations thereof.
在一些實施例中,該組合物進一步包含溶劑。在一些實施例中,該溶劑包含水。在一些實施例中,該溶劑包含有機物質。In some embodiments, the composition further includes a solvent. In some embodiments, the solvent includes water. In some embodiments, the solvent contains organic substances.
本發明之另一個態樣提供一種包括機器可執行代碼之非暫時性電腦可讀介質,該機器可執行代碼在藉由一或多個電腦處理器執行時實施本文以上或其他地方之任何方法。Another aspect of the present invention provides a non-transitory computer-readable medium including machine-executable code that, when executed by one or more computer processors, implements any of the methods above or elsewhere.
本發明之另一個態樣提供一種系統,其包括一或多個電腦處理器及耦合至其之電腦記憶體。該電腦記憶體包括機器可執行代碼,該機器可執行代碼在藉由一或多個電腦處理器執行時實施以上或本文其他地方之任何方法。Another aspect of the present invention provides a system including one or more computer processors and computer memory coupled thereto. The computer memory includes machine-executable code that, when executed by one or more computer processors, implements any of the methods above or elsewhere in this document.
熟習此項技術者從以下詳細描述輕易地明瞭本發明之另外態樣及優點,其中僅顯示並描述本發明之說明性實施例。如將明瞭,本發明能夠具有其他及不同實施例,且其若干詳細內容能夠在各種明顯態樣進行修改,全部不脫離本發明。因此,附圖及描述本質上應被認為說明性,而不應被認為限制性。 以引用方式併入Those skilled in the art can easily understand other aspects and advantages of the present invention from the following detailed description, in which only illustrative embodiments of the present invention are shown and described. As will be clear, the present invention is capable of other and different embodiments, and some of its details can be modified in various obvious ways, all without departing from the present invention. Therefore, the drawings and description should be regarded as illustrative in nature and not restrictive. Incorporated by reference
本說明書中所提及的所有公開案及專利申請案係以引用之方式併入本文中,併入程度如同特定且個別地指明各個別公開案或專利申請案以引用之方式併入般。All publications and patent applications mentioned in this specification are incorporated herein by reference, and the degree of incorporation is as if each individual publication or patent application was specifically and individually indicated to be incorporated by reference.
交叉參考 本申請案主張2019年2月14日申請之美國臨時申請案第62/805,729號及2019年7月12日申請之美國臨時申請案第62/873,640號之權益,該等申請案係以引用之方式併入本文中。 Cross-reference This application claims the rights of U.S. Provisional Application No. 62/805,729 filed on February 14, 2019 and U.S. Provisional Application No. 62/873,640 filed on July 12, 2019. These applications are based on The way of reference is incorporated into this article.
儘管已在本文中顯示並描述本發明之各種實施例,但熟習此項技術者顯然明瞭此等實施例僅以舉例方式提供。熟習此項技術者在不脫離本發明下可進行許多改變、變化及取代。應瞭解,可採用本文所述之本發明之實施例之各種替代例。Although various embodiments of the present invention have been shown and described herein, those skilled in the art will obviously understand that these embodiments are provided by way of example only. Those skilled in the art can make many changes, changes and substitutions without departing from the present invention. It should be understood that various alternatives to the embodiments of the invention described herein may be employed.
如本文所用,術語「漿液」一般係指包含液相及固相之溶液。固相可係含在液相中。漿液可具有一或多個液相及一或多個固相。As used herein, the term "slurry" generally refers to a solution containing a liquid phase and a solid phase. The solid phase may be contained in the liquid phase. The slurry may have one or more liquid phases and one or more solid phases.
如本文所用,術語「鄰接(adjacent/adjacent to)」一般係指「靠近」、「相鄰」、「接觸」及「近接」。在一些情況下,鄰接可係「以上」或「以下」。鄰接第二層之第一層可與第二層直接接觸,或在第一層與第二層之間可存在一或多個介入層。As used herein, the term "adjacent/adjacent to" generally refers to "close", "adjacent", "contact" and "close". In some cases, the adjacency can be "above" or "below". The first layer adjacent to the second layer may be in direct contact with the second layer, or there may be one or more intervening layers between the first layer and the second layer.
每當術語「至少」、「大於」或「大於或等於」在一系列兩個或更多個數值中的第一個數值之前時,術語「至少」、「大於」或「大於或等於」應用於該一系列數值中的每個數值。例如,大於或等於1、2或3係等效於大於或等於1、大於或等於2、或大於或等於3。The term "at least", "greater than" or "greater than or equal to" applies whenever the term "at least", "greater than" or "greater than or equal to" precedes the first number in a series of two or more numbers For each value in the series of values. For example, greater than or equal to 1, 2, or 3 is equivalent to greater than or equal to 1, greater than or equal to 2, or greater than or equal to 3.
每當術語「不大於」、「小於」或「小於或等於」在一系列兩個或更多個數值中的第一個數值之前時,術語「不大於」、「小於」或「小於或等於」應用於該一系列數值中的每個數值。例如,小於或等於3、2或1係等效於小於或等於3、小於或等於2、或小於或等於1。Whenever the term "not greater than", "less than" or "less than or equal to" precedes the first number in a series of two or more numbers, the term "not greater than", "less than" or "less than or equal to" "Apply to each value in the series. For example, less than or equal to 3, 2 or 1 is equivalent to less than or equal to 3, less than or equal to 2, or less than or equal to 1.
本發明提供塗佈有一或多個金屬層之部件、製品或物件(例如,片材、管材或線)。部件可係物件之至少一部分或可係物件之整體。金屬層可包含一或多種金屬。在一些情況下,基材可塗佈有金屬層。塗層可包含具有至少一種元素金屬之合金化劑。當用包含具有至少一種元素金屬之合金化劑之漿液塗佈基材時,可形成經漿液塗佈之基材。可使已塗佈有合金化劑之基材經受退火條件以產生鄰接基材之金屬層。可藉助於介於金屬層與基材之間的擴散層將金屬層耦合至基材。The present invention provides parts, articles or articles (for example, sheets, pipes or wires) coated with one or more metal layers. The component can be at least a part of the object or can be the whole of the object. The metal layer may include one or more metals. In some cases, the substrate may be coated with a metal layer. The coating may include an alloying agent having at least one elemental metal. When a substrate is coated with a slurry containing an alloying agent having at least one elemental metal, a slurry-coated substrate can be formed. The substrate that has been coated with the alloying agent can be subjected to annealing conditions to produce a metal layer adjacent to the substrate. The metal layer can be coupled to the substrate by means of a diffusion layer between the metal layer and the substrate.
基材可產生>50微米之合金層同時仍在基材中保留細晶粒(>7 ASTM晶粒尺寸)。以上開發並提出的等級係可能非標準等級之等級。該等等級可用於高溫退火或與金屬化製程無關之高溫應用。基材及漿液 The substrate can produce alloy layers >50 microns while still retaining fine grains (>7 ASTM grain size) in the substrate. The levels developed and proposed above may be non-standard levels. These grades can be used for high temperature annealing or high temperature applications that are not related to the metallization process. Substrate and slurry
本發明提供基材及採用鄰接基材沉積金屬層之方法。此類基材可包括(例如)以下元素中之一者或多者:碳、錳、矽、釩、鈦、鎳、鉻、鉬、硼及鈮。基材之實例包括但不限於不銹鋼、矽鋼及噪音振動粗糙度阻尼鋼。The present invention provides a substrate and a method for depositing a metal layer adjacent to the substrate. Such substrates may include, for example, one or more of the following elements: carbon, manganese, silicon, vanadium, titanium, nickel, chromium, molybdenum, boron, and niobium. Examples of substrates include, but are not limited to, stainless steel, silicon steel, and noise, vibration and roughness damping steel.
基材可經提供為線圈、捲繞網、線、管道(pipe)、管材(tube)、板條(slab)、網、浸漬成型部件、箔、板、鋼絲繩、桿或螺紋桿(其中已將螺釘圖案應用至桿之任何長度或厚度)、片材或平坦表面。例如,片材可具有0.001英寸至1英寸之任何厚度。The base material can be provided as coils, wound nets, wires, pipes, tubes, slabs, nets, dip-molded parts, foils, plates, wire ropes, rods or threaded rods (which have been The screw pattern is applied to any length or thickness of the rod, sheet or flat surface. For example, the sheet may have any thickness from 0.001 inch to 1 inch.
基材可包含元素物質,該元素物質為過渡金屬、非金屬元素、金屬氧化物、還原金屬元素、金屬鹵化物、活化劑、類金屬或其組合(例如,複數種元素金屬)。基材可包含過渡金屬。基材可包含非金屬元素。基材可包含類金屬。基材可包含選自例如鉻、鎳、鋁、矽、釩、鈦、硼、鎢、鉬、鈷、錳、鋯、鈮、碳、氮、硫、氧、磷、銅、錫、鈣、砷、鉛、銻、鉭、鋅或其任何組合之元素物質。基材可包含經組態為還原金屬劑之元素物質。還原金屬劑可包含鋁、鈦、鋯、矽或鎂。基材可包含載劑溶劑,諸如水、異丙醇或甲基乙基酮。The substrate may include an element material, which is a transition metal, a non-metal element, a metal oxide, a reduced metal element, a metal halide, an activator, a metalloid, or a combination thereof (for example, a plurality of element metals). The substrate may include a transition metal. The substrate may contain non-metallic elements. The substrate may include a metalloid. The substrate may comprise selected from, for example, chromium, nickel, aluminum, silicon, vanadium, titanium, boron, tungsten, molybdenum, cobalt, manganese, zirconium, niobium, carbon, nitrogen, sulfur, oxygen, phosphorus, copper, tin, calcium, arsenic , Lead, antimony, tantalum, zinc or any combination of element substances. The substrate may include an element substance configured as a reducing metal agent. The reducing metal agent may include aluminum, titanium, zirconium, silicon, or magnesium. The substrate may include a carrier solvent such as water, isopropanol, or methyl ethyl ketone.
基材可包含金屬,諸如鐵、銅、鋁或其任何組合。基材可包含金屬及/或非金屬之合金。合金可包含雜質。基材可包含鋼。基材可係鋼基材。基材可包含陶瓷。基材可不含游離碳。基材可由熔融相製成。基材可處於冷還原狀態,處於完全硬質狀態(例如,在冷還原後未經受退火步驟),或處於熱軋酸洗狀態。The substrate may comprise metal, such as iron, copper, aluminum, or any combination thereof. The substrate may include metal and/or non-metal alloys. The alloy may contain impurities. The substrate may comprise steel. The substrate may be a steel substrate. The substrate may include ceramic. The substrate may not contain free carbon. The substrate can be made from the molten phase. The substrate may be in a cold reduced state, in a completely hard state (for example, without an annealing step after cold reduction), or in a hot rolled and pickled state.
基材可包含金屬氧化物。金屬氧化物可包括但不限於Al2 O3 、MgO、CaO、Cr2 O3 、TiO2 、FeCr2 O4 、SiO2 、Ta2 O5 或MgCr2 O4 、或其組合。可將金屬氧化物直接併入至基材中。金屬氧化物可藉由元素金屬與熱力學上較不穩定的金屬氧化物之間的金屬熱還原反應在基材中形成。適宜之元素金屬及熱力學上較不穩定之金屬氧化物對可選自其吉布斯(Gibbs)自由形成能因金屬氧化物氧化元素金屬而減少之對。金屬熱還原反應可自發發生。金屬熱還原反應可在金屬轉移活化劑(諸如鹵化物、金屬鹵化物、金屬硫化物或氫氣)之存在下發生。金屬氧化物可包含粉末。The substrate may include a metal oxide. The metal oxide may include, but is not limited to, Al 2 O 3 , MgO, CaO, Cr 2 O 3 , TiO 2 , FeCr 2 O 4 , SiO 2 , Ta 2 O 5, or MgCr 2 O 4 , or a combination thereof. The metal oxide can be directly incorporated into the substrate. The metal oxide can be formed in the substrate by the metal thermal reduction reaction between the elemental metal and the thermodynamically unstable metal oxide. Suitable elemental metals and thermodynamically unstable metal oxide pairs can be selected from the pairs whose Gibbs free formation can be reduced by the oxidation of elemental metals by metal oxides. The thermal reduction of metals can occur spontaneously. The metal thermal reduction reaction can occur in the presence of a metal transfer activator such as a halide, metal halide, metal sulfide, or hydrogen. The metal oxide may include powder.
粉末(例如,包含金屬、金屬氧化物、金屬鹵化物或其他基材組分)可包含具有約0.01微米(μm)至1 mm之顆粒尺寸(例如,平均顆粒尺寸)之個別顆粒。粉末可具有至少約0.01 µm、0.1 µm、1 µm、20 µm、30 µm、50 µm、100 µm、250 µm、500 µm或約1 mm之平均顆粒尺寸。粉末可具有不大於約1 mm、500 µm、250 µm、100 µm、50 µm、30 µm、20 µm、10 µm、1 µm、0.1 µm或約0.01 µm之平均顆粒尺寸。粉末可具有約0.01 µm至0.1 µm、0.01 µm至1 µm、0.01 µm至20 µm、0.01 µm至30 µm、0.01 µm至50 µm、0.01 µm至100 µm、0.01 µm至250 µm、0.01 µm至500 µm、0.01 µm至1 mm、0.1 µm至1 µm、0.1 µm至20 µm、0.1 µm至30 µm、0.1 µm至50 µm、0.1 µm至100 µm、0.1 µm至250 µm、0.1 µm至500 µm、0.1 µm至1 mm、1 µm至20 µm、1 µm至30 µm、1 µm至50 µm、1 µm至100 µm、1 µm至250 µm、1 µm至500 µm、1 µm至1 mm、10 µm至100 µm、10 µm至250 µm、10 µm至500 µm、10 µm至1 mm、100 µm至250 µm、100 µm至500 µm、100 µm至1 mm、250 µm至500 µm、250 µm至1 mm或500 µm至1 mm之平均顆粒尺寸。粉末可具有具有至少約0.01 µm、0.1 µm、1 µm、20 µm、30 µm、50 µm、100 µm、250 µm、500 µm、1 mm或更大之平均顆粒尺寸之個別顆粒。粉末可具有具有至多約1毫米(mm)、500 µm、250 µm、100 µm、50 µm、30 µm、20 µm、1 µm、0.1 µm或0.01 µm或更小之顆粒尺寸之個別顆粒。粉末可包含可通過具有至少325或更小之篩孔尺寸之篩之顆粒。包含金屬、金屬氧化物、金屬鹵化物或其他基材組分之粉末可包含可通過具有至少約18、20、25、30、35、40、45、50、60、65、80、100、115、150、170、200、250、270之篩孔尺寸或至少約400或更大之篩孔尺寸之篩之顆粒。The powder (e.g., containing metals, metal oxides, metal halides, or other substrate components) may include individual particles having a particle size (e.g., average particle size) of about 0.01 microns (μm) to 1 mm. The powder may have an average particle size of at least about 0.01 µm, 0.1 µm, 1 µm, 20 µm, 30 µm, 50 µm, 100 µm, 250 µm, 500 µm, or about 1 mm. The powder may have an average particle size of no greater than about 1 mm, 500 µm, 250 µm, 100 µm, 50 µm, 30 µm, 20 µm, 10 µm, 1 µm, 0.1 µm, or about 0.01 µm. The powder can have about 0.01 µm to 0.1 µm, 0.01 µm to 1 µm, 0.01 µm to 20 µm, 0.01 µm to 30 µm, 0.01 µm to 50 µm, 0.01 µm to 100 µm, 0.01 µm to 250 µm, 0.01 µm to 500 µm, 0.01 µm to 1 mm, 0.1 µm to 1 µm, 0.1 µm to 20 µm, 0.1 µm to 30 µm, 0.1 µm to 50 µm, 0.1 µm to 100 µm, 0.1 µm to 250 µm, 0.1 µm to 500 µm, 0.1 µm to 1 mm, 1 µm to 20 µm, 1 µm to 30 µm, 1 µm to 50 µm, 1 µm to 100 µm, 1 µm to 250 µm, 1 µm to 500 µm, 1 µm to 1 mm, 10 µm To 100 µm, 10 µm to 250 µm, 10 µm to 500 µm, 10 µm to 1 mm, 100 µm to 250 µm, 100 µm to 500 µm, 100 µm to 1 mm, 250 µm to 500 µm, 250 µm to 1 mm or 500 µm to 1 mm average particle size. The powder may have individual particles having an average particle size of at least about 0.01 µm, 0.1 µm, 1 µm, 20 µm, 30 µm, 50 µm, 100 µm, 250 µm, 500 µm, 1 mm or greater. The powder may have individual particles with a particle size of at most about 1 millimeter (mm), 500 µm, 250 µm, 100 µm, 50 µm, 30 µm, 20 µm, 1 µm, 0.1 µm, or 0.01 µm or less. The powder may comprise particles that can pass through a sieve having a mesh size of at least 325 or less. Powders containing metals, metal oxides, metal halides, or other substrate components may contain at least about 18, 20, 25, 30, 35, 40, 45, 50, 60, 65, 80, 100, 115 , 150, 170, 200, 250, 270 mesh size or at least about 400 or larger mesh size sieve particles.
漿液混合物可包含佔漿液總重量約30重量百分比(重量%)、35重量%、40重量%、45重量%、50重量%、55重量%、60重量%、65重量%、70重量%、75重量%、80重量%、85重量%、90重量%或約95重量%之金屬氧化物。漿液混合物可包含佔漿液總重量至少約30重量%、35重量%、40重量%、45重量%、50重量%、55重量%、60重量%、65重量%、70重量%、75重量%、80重量%、85重量%、90重量%或約95重量%或更多之金屬氧化物。漿液混合物可包含佔漿液總重量不大於約95重量%、90重量%、85重量%、80重量%、75重量%、70重量%、65重量%、60重量%、55重量%、50重量%、45重量%、40重量%、35重量%或不大於約30重量%或更小之金屬氧化物。漿液混合物可包含在佔漿液總重量約30至約95重量%之範圍內的金屬氧化物。金屬氧化物可佔漿液總重量約1至約95重量%、約1至約85重量%、約1至約75重量%、約1至約60重量%、約1至約50重量%、約1至約40重量%、約1至約30重量%、約1至約20重量%、約1至約10重量%、約5至約95重量%、約5至約85重量%、約5至約75重量%、約5至約60重量%、約5至約50重量%、約5至約40重量%、約5至約30重量%、約5至約20重量%、約5至約10重量%、約10至95重量%、約10至約85重量%、約10至約75重量%、約10至約60重量%、約10至約50重量%、約10至約40重量%、約10至約30重量%、約10至約20重量%、約20至約95重量%、約20至約85重量%、約20至約75重量%、約20至約60重量%、約20至約50重量%、約20至約40重量%、約20至約30重量%、約30至約85重量%、約30至約75重量%、約30至約60重量%、約30至約50重量%、約30至約40重量%、約1至約95重量%、約40至約85重量%、約40至約75重量%、約40至約60重量%、約40至約50重量%、約50至約95重量%、約50至約85重量%、約50至約75重量%或約50至約60重量%。可針對於其相對純度選擇金屬氧化物或還原金屬。金屬氧化物或還原金屬可包含基於重量計至少約25%、30%、35%、40%、45%、50%、55%、60%、65%、70%、75%、80%、85%、90%、95%、99%、99.9%或至少約99.99%或更大之純度。金屬氧化物或還原金屬可包含基於重量計不大於約99.99%、99%、95%、90%、85%、80%、75%、70%、65%、60%、55%、50%、45%、40%、35%、30%或不大於約25%或更小之純度。The slurry mixture may comprise about 30% by weight (weight%), 35% by weight, 40% by weight, 45% by weight, 50% by weight, 55% by weight, 60% by weight, 65% by weight, 70% by weight, 75% by weight of the total weight of the slurry. % By weight, 80% by weight, 85% by weight, 90% by weight or about 95% by weight of metal oxide. The slurry mixture may comprise at least about 30% by weight, 35% by weight, 40% by weight, 45% by weight, 50% by weight, 55% by weight, 60% by weight, 65% by weight, 70% by weight, 75% by weight, 80% by weight, 85% by weight, 90% by weight, or about 95% by weight or more of metal oxide. The slurry mixture may comprise not more than about 95%, 90%, 85%, 80%, 75%, 70%, 65%, 60%, 55%, 50% by weight of the total weight of the slurry. , 45% by weight, 40% by weight, 35% by weight or not more than about 30% by weight or less of metal oxide. The slurry mixture may include metal oxides in the range of about 30 to about 95% by weight of the total weight of the slurry. The metal oxide may account for about 1 to about 95% by weight, about 1 to about 85% by weight, about 1 to about 75% by weight, about 1 to about 60% by weight, about 1 to about 50% by weight, about 1% by weight of the total weight of the slurry. To about 40% by weight, about 1 to about 30% by weight, about 1 to about 20% by weight, about 1 to about 10% by weight, about 5 to about 95% by weight, about 5 to about 85% by weight, about 5 to about 75% by weight, about 5 to about 60% by weight, about 5 to about 50% by weight, about 5 to about 40% by weight, about 5 to about 30% by weight, about 5 to about 20% by weight, about 5 to about 10% by weight %, about 10 to 95% by weight, about 10 to about 85% by weight, about 10 to about 75% by weight, about 10 to about 60% by weight, about 10 to about 50% by weight, about 10 to about 40% by weight, about 10 to about 30% by weight, about 10 to about 20% by weight, about 20 to about 95% by weight, about 20 to about 85% by weight, about 20 to about 75% by weight, about 20 to about 60% by weight, about 20 to about About 50% by weight, about 20 to about 40% by weight, about 20 to about 30% by weight, about 30 to about 85% by weight, about 30 to about 75% by weight, about 30 to about 60% by weight, about 30 to about 50 Weight%, about 30 to about 40% by weight, about 1 to about 95% by weight, about 40 to about 85% by weight, about 40 to about 75% by weight, about 40 to about 60% by weight, about 40 to about 50% by weight , About 50 to about 95% by weight, about 50 to about 85% by weight, about 50 to about 75% by weight, or about 50 to about 60% by weight. The metal oxide or reduced metal can be selected for its relative purity. The metal oxide or reduced metal may comprise at least about 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 85% by weight. %, 90%, 95%, 99%, 99.9% or at least about 99.99% or greater purity. The metal oxide or reduced metal may contain no more than about 99.99%, 99%, 95%, 90%, 85%, 80%, 75%, 70%, 65%, 60%, 55%, 50%, 45%, 40%, 35%, 30% or not more than about 25% or less purity.
還原金屬可包含約0.6至2.0與氧化物源之原子比。還原金屬可包含約0.01至10.0與氧化物源之原子比、約0.01至1.0原子比、約0.01至1.5原子比、約0.01至3.0原子比、約0.01至4.0原子比、約0.01至5.0原子比、約0.1至1.0原子比、約0.1至1.5原子比、約0.1至3.0原子比、約0.1至4.0原子比、約0.1至5.0原子比、約0.1至10.0原子比、約0.5至1.0原子比、約0.5至1.5原子比、約0.5至3.0原子比、約0.5至4.0原子比、約0.5至5.0原子比、約0.5至10.0原子比、約1.0至1.5原子比、約1.0至3.0原子比、約1.0至4.0原子比、約1.0至5.0原子比、約1.0至10.0原子比、約2.0至3.0原子比、約2.0至4.0原子比、約2.0至5.0原子比、約2.0至10.0原子比、約3.0至4.0原子比、約4.0至5.0原子比、約4.0至10.0原子比或約5.0至10.0原子比。The reducing metal may comprise an atomic ratio of about 0.6 to 2.0 to the oxide source. The reducing metal may comprise an atomic ratio of about 0.01 to 10.0 and an oxide source, about 0.01 to 1.0 atomic ratio, about 0.01 to 1.5 atomic ratio, about 0.01 to 3.0 atomic ratio, about 0.01 to 4.0 atomic ratio, about 0.01 to 5.0 atomic ratio , About 0.1 to 1.0 atomic ratio, about 0.1 to 1.5 atomic ratio, about 0.1 to 3.0 atomic ratio, about 0.1 to 4.0 atomic ratio, about 0.1 to 5.0 atomic ratio, about 0.1 to 10.0 atomic ratio, about 0.5 to 1.0 atomic ratio, About 0.5 to 1.5 atomic ratio, about 0.5 to 3.0 atomic ratio, about 0.5 to 4.0 atomic ratio, about 0.5 to 5.0 atomic ratio, about 0.5 to 10.0 atomic ratio, about 1.0 to 1.5 atomic ratio, about 1.0 to 3.0 atomic ratio, about 1.0 to 4.0 atomic ratio, about 1.0 to 5.0 atomic ratio, about 1.0 to 10.0 atomic ratio, about 2.0 to 3.0 atomic ratio, about 2.0 to 4.0 atomic ratio, about 2.0 to 5.0 atomic ratio, about 2.0 to 10.0 atomic ratio, about 3.0 To 4.0 atomic ratio, about 4.0 to 5.0 atomic ratio, about 4.0 to 10.0 atomic ratio, or about 5.0 to 10.0 atomic ratio.
金屬基材可包含金屬轉移活化劑組分。金屬轉移活化劑可佔總基材約0.001重量%、0.01重量%、0.1重量%、0.5重量%、1重量%、2重量%、3重量%、4重量%、5重量%、10重量%、15重量%、20重量%、30重量%或約50重量%。金屬轉移活化劑可佔總基材至少約0.001重量%、0.01重量%、0.1重量%、0.5重量%、1重量%、2重量%、3重量%、4重量%、5重量%、10重量%、15重量%、20重量%、30重量%或至少約50重量%或更多。金屬轉移活化劑可佔總基材不大於約50重量%、30重量%、20重量%、15重量%、10重量%、5重量%、4重量%、3重量%、2重量%、1重量%、0.5重量%、0.1重量%、0.01重量%或不大於約0.001重量%或更小。金屬轉移活化劑可佔總基材約0.001至1重量%、約0.001至2重量%、約0.001至3重量%、約0.001至4重量%、約0.001至5重量%、約0.001至10重量%、約0.001至15重量%、約0.001至20重量%、約0.001至30重量%、約0.001至50重量%、約0.01至1重量%、約0.01至2重量%、約0.01至3重量%、約0.01至4重量%、約0.01至10重量%、約0.01至15重量%、約0.01至20重量%、約0.01至30重量%、約0.01至50重量%、約0.1至1重量%、約0.1至2重量%、約0.1至3重量%、約0.1至4重量%、約0.1至5重量%、約0.1至10重量%、約0.1至15重量%、約0.1至20重量%、約0.1至30重量%、約0.1至50重量%、約1.0至2重量%、約1.0至3重量%、約1.0至4重量%、約1.0至10重量%、約1.0至15重量%、約1.0至20重量%、約1.0至30重量%、約1.0至50重量%或約10至50重量%。The metal substrate may include a metal transfer activator component. The metal transfer activator can account for about 0.001% by weight, 0.01% by weight, 0.1% by weight, 0.5% by weight, 1% by weight, 2% by weight, 3% by weight, 4% by weight, 5% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight, or about 50% by weight. The metal transfer activator may account for at least about 0.001%, 0.01%, 0.1%, 0.5%, 1%, 2%, 3%, 4%, 5%, 10% by weight of the total substrate , 15% by weight, 20% by weight, 30% by weight, or at least about 50% by weight or more. The metal transfer activator may account for no more than about 50%, 30%, 20%, 15%, 10%, 5%, 4%, 3%, 2%, 1% by weight of the total substrate %, 0.5% by weight, 0.1% by weight, 0.01% by weight, or not more than about 0.001% by weight or less. The metal transfer activator may account for about 0.001 to 1% by weight, about 0.001 to 2% by weight, about 0.001 to 3% by weight, about 0.001 to 4% by weight, about 0.001 to 5% by weight, about 0.001 to 10% by weight of the total substrate , About 0.001 to 15% by weight, about 0.001 to 20% by weight, about 0.001 to 30% by weight, about 0.001 to 50% by weight, about 0.01 to 1% by weight, about 0.01 to 2% by weight, about 0.01 to 3% by weight, About 0.01 to 4% by weight, about 0.01 to 10% by weight, about 0.01 to 15% by weight, about 0.01 to 20% by weight, about 0.01 to 30% by weight, about 0.01 to 50% by weight, about 0.1 to 1% by weight, about 0.1 to 2% by weight, about 0.1 to 3% by weight, about 0.1 to 4% by weight, about 0.1 to 5% by weight, about 0.1 to 10% by weight, about 0.1 to 15% by weight, about 0.1 to 20% by weight, about 0.1 To 30% by weight, about 0.1 to 50% by weight, about 1.0 to 2% by weight, about 1.0 to 3% by weight, about 1.0 to 4% by weight, about 1.0 to 10% by weight, about 1.0 to 15% by weight, about 1.0 to 20% by weight, about 1.0 to 30% by weight, about 1.0 to 50% by weight, or about 10 to 50% by weight.
本發明提供塗佈有一或多個金屬層之基材。在一些情況下,基材可塗佈有至少一個金屬層。基材可塗佈有約1、2、3、4、5、6、7、8、9、10個或更多個金屬層。基材可塗佈有至少約1、2、3、4、5、6、7、8、9、10個或更多個金屬層。基材可塗佈有不大於約10、9、8、7、6、5、4、3、2或1個金屬層。塗層可包含具有至少一種元素金屬之合金化劑。可藉助於介於金屬層與基材之間的擴散層將金屬層耦合至基材。The present invention provides a substrate coated with one or more metal layers. In some cases, the substrate may be coated with at least one metal layer. The substrate may be coated with about 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or more metal layers. The substrate may be coated with at least about 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or more metal layers. The substrate may be coated with no more than about 10, 9, 8, 7, 6, 5, 4, 3, 2, or 1 metal layers. The coating may include an alloying agent having at least one elemental metal. The metal layer can be coupled to the substrate by means of a diffusion layer between the metal layer and the substrate.
金屬層可具有至少約1奈米、10奈米、100奈米、500奈米、1微米、5微米、10微米、25微米、50微米、60微米、70微米、80微米、90微米或至少100微米或更大之厚度。金屬層可具有不大於約100微米、90微米、80微米、70微米、60微米、50微米、25微米、10微米、5微米、1微米、500奈米、100奈米、10奈米或不大於約1奈米或更小之厚度。金屬層之厚度可大於單原子層。該厚度可係多層。The metal layer may have at least about 1 nanometer, 10 nanometers, 100 nanometers, 500 nanometers, 1 micrometer, 5 micrometers, 10 micrometers, 25 micrometers, 50 micrometers, 60 micrometers, 70 micrometers, 80 micrometers, 90 micrometers or at least Thickness of 100 microns or greater. The metal layer may have a thickness not greater than about 100 microns, 90 microns, 80 microns, 70 microns, 60 microns, 50 microns, 25 microns, 10 microns, 5 microns, 1 microns, 500 nanometers, 100 nanometers, 10 nanometers, or not Thickness greater than about 1 nanometer or less. The thickness of the metal layer can be greater than the single atomic layer. The thickness can be multiple layers.
基材可包含約2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19或約20種或更多種元素物質。基材可包含至少約2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19或約20種或更多種元素物質。基材可包含不超過約20、19、18、17、16、15、14、13、12、11、10、9、8、7、6、5、4、3種或不超過約2種或更少種元素物質。基材可包含以下元素中之至少兩者:碳、錳、矽、釩及鈦。基材可包含以下元素中之至少三者:碳、錳、矽、釩及鈦。基材可包含以下元素中之至少四者:碳、錳、矽、釩及鈦。The substrate may contain about 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19 or about 20 or more element substances . The substrate may include at least about 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, or about 20 or more elements substance. The substrate may comprise no more than about 20, 19, 18, 17, 16, 15, 14, 13, 12, 11, 10, 9, 8, 7, 6, 5, 4, 3 or no more than about 2 or Fewer kinds of elemental substances. The substrate may include at least two of the following elements: carbon, manganese, silicon, vanadium, and titanium. The substrate may include at least three of the following elements: carbon, manganese, silicon, vanadium, and titanium. The substrate may include at least four of the following elements: carbon, manganese, silicon, vanadium, and titanium.
基材可包含多種元素。基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之碳(C)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之碳。The substrate may contain multiple elements. The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of carbon (C). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less carbon.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之錳(Mn)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之錳。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of manganese (Mn). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of manganese.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之铌(Nb)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之铌。可添加鈮至基材,使得基材可包含至少約0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.003重量%、0.004重量%、0.005重量%、0.006重量%、0.007重量%、0.008重量%、0.009重量%、0.01重量%、0.02重量%、0.03重量%、0.04重量%、0.05重量%、0.06重量%、0.07重量%、0.08重量%、0.09重量%、0.1重量%或更多之量之铌。在不希望受理論約束下,基材中之鈮可防止基材中之鉻耗盡。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of niobium (Nb). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of niobium. Niobium can be added to the substrate so that the substrate can contain at least about 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.003% by weight, 0.004% by weight, 0.005% by weight, 0.006% by weight, 0.007% by weight, 0.008% by weight, 0.009% by weight, 0.01% by weight, 0.02% by weight, 0.03% by weight, 0.04% by weight, 0.05% by weight, 0.06% by weight, 0.07% by weight, 0.08% by weight, 0.09% by weight, 0.1% by weight or more The amount of niobium. Without wishing to be bound by theory, the niobium in the base material can prevent the depletion of chromium in the base material.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之釩(V)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之釩。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of vanadium (V). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of vanadium.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之鈦(Ti)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或少於約0.0001重量%或更少之鈦。在一些情況下,基材可包含至少約0.015重量%鈦。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of titanium (Ti). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of titanium. In some cases, the substrate may include at least about 0.015% by weight titanium.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之氮(N)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之氮。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more nitrogen (N). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less nitrogen.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之磷(P)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之磷。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of phosphorus (P). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less phosphorus.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之硫(S)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之硫。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more sulfur (S). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less sulfur.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之鋁(Al)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之鋁。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of aluminum (Al). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less aluminum.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之銅(Cu)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之銅。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of copper (Cu). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less copper.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之鎳(Ni)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之鎳。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of nickel (Ni). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less nickel.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之鉻(Cr)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之鉻。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of chromium (Cr). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of chromium.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之鉬(Mo)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之鉬。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more molybdenum (Mo). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of molybdenum.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之錫(Sn)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或少於約0.0001重量%或更少之錫。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more tin (Sn). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less tin.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之硼(B)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之硼。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of boron (B). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less boron.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之鈣(Ca)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之鈣。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of calcium (Ca). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less calcium.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之砷(As)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或少於約0.0001重量%或更少之砷。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of arsenic (As). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of arsenic.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之鈷(Co)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之鈷。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of cobalt (Co). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of cobalt.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之鉛(Pb)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之鉛。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of lead (Pb). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of lead.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更大之銻(Sb)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之銻。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or greater antimony (Sb). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of antimony.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之鉭(Ta)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之鉭。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of tantalum (Ta). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of tantalum.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之鎢(W)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或少於約0.0001重量%或更少之鎢。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of tungsten (W). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less tungsten.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之鋅(Zn)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之鋅。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of zinc (Zn). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of zinc.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之鋯(Zr)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或小於約0.0001重量%或更少之鋯。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of zirconium (Zr). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of zirconium.
基材可包含大於0.0001重量%、0.0005重量%、0.001重量%、0.002重量%、0.004重量%、0.005重量%、0.01重量%、0.05重量%、0.1重量%、0.2重量%、0.3重量%、0.4重量%、0.5重量%、0.6重量%、0.7重量%、0.8重量%、0.9重量%、1重量%、1.1重量%、1.2重量%、1.3重量%、1.4重量%、1.5重量%、1.6重量%、1.7重量%、1.8重量%、1.9重量%、2重量%、2.5重量%、3重量%、5重量%、7重量%、10重量%、15重量%、20重量%、30重量%或大於約40重量%或更多之矽(Si)。基材可包含小於或等於約40重量%、30重量%、20重量%、15重量%、10重量%、7重量%、5重量%、3重量%、2.5重量%、2重量%、1.9重量%、1.8重量%、1.7重量%、1.6重量%、1.5重量%、1.4重量%、1.3重量%、1.2重量%、1.1重量%、1重量%、0.9重量%、0.8重量%、0.7重量%、0.6重量%、0.5重量%、0.4重量%、0.3重量%、0.2重量%、0.1重量%、0.05重量%、0.01重量%、0.005重量%、0.004重量%、0.002重量%、0.001重量%、0.0005重量%或少於約0.0001重量%或更少之矽。The substrate may contain more than 0.0001% by weight, 0.0005% by weight, 0.001% by weight, 0.002% by weight, 0.004% by weight, 0.005% by weight, 0.01% by weight, 0.05% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4 Weight%, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 1.1% by weight, 1.2% by weight, 1.3% by weight, 1.4% by weight, 1.5% by weight, 1.6% by weight , 1.7% by weight, 1.8% by weight, 1.9% by weight, 2% by weight, 2.5% by weight, 3% by weight, 5% by weight, 7% by weight, 10% by weight, 15% by weight, 20% by weight, 30% by weight or more About 40% by weight or more of silicon (Si). The substrate may comprise less than or equal to about 40% by weight, 30% by weight, 20% by weight, 15% by weight, 10% by weight, 7% by weight, 5% by weight, 3% by weight, 2.5% by weight, 2% by weight, 1.9% by weight %, 1.8% by weight, 1.7% by weight, 1.6% by weight, 1.5% by weight, 1.4% by weight, 1.3% by weight, 1.2% by weight, 1.1% by weight, 1% by weight, 0.9% by weight, 0.8% by weight, 0.7% by weight, 0.6 wt%, 0.5 wt%, 0.4 wt%, 0.3 wt%, 0.2 wt%, 0.1 wt%, 0.05 wt%, 0.01 wt%, 0.005 wt%, 0.004 wt%, 0.002 wt%, 0.001 wt%, 0.0005 wt % Or less than about 0.0001% by weight or less of silicon.
基材形成期間可存在自由間隙,諸如氮、碳及硫。基材中之鈮可結合至基材中之此等自由間隙(例如氮、碳及硫)。鈮之添加可防止晶界沉澱,例如鉻晶界沉澱。晶界沉澱之減少可導致腐蝕性能之提高,該腐蝕性能可係基材之所需性質。圖3說明在以金屬層塗佈之後的鋼基材,其中未觀察到晶界鉻沉澱。There may be free gaps during the formation of the substrate, such as nitrogen, carbon, and sulfur. The niobium in the substrate can bond to these free gaps in the substrate (for example, nitrogen, carbon, and sulfur). The addition of niobium can prevent grain boundary precipitation, such as chromium grain boundary precipitation. The reduction of grain boundary precipitation can lead to an increase in corrosion performance, which can be a required property of the substrate. Figure 3 illustrates the steel substrate after coating with a metal layer, in which no grain boundary chromium precipitation is observed.
可測量基材表面上鉻之重量%。鉻重量%可係經塗佈基材或未塗佈基材之鉻重量%。在一些情況下,基材之鉻重量%可係至少約5%、10%、15%、16%、17%、18%、19%、20%、21%、22%、23%、24%、25%或26%或更多。基材之鉻重量%可係不大於約26%、25%、24%、23%、22%、21%、20%、19%、18%、17%、16%、15%、10%、或不大於約5%或更小。基材之鉻重量%可係約16%、17%、18%、19%、20%、21%、22%或23%。經塗佈基材之鉻重量%可係大於、約或小於未塗佈基材之鉻重量%。It can measure the weight% of chromium on the surface of the substrate. The chromium weight% can be the chromium weight% of the coated substrate or the uncoated substrate. In some cases, the weight% of chromium of the substrate may be at least about 5%, 10%, 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24% , 25% or 26% or more. The chromium weight% of the substrate can be no more than about 26%, 25%, 24%, 23%, 22%, 21%, 20%, 19%, 18%, 17%, 16%, 15%, 10%, Or not more than about 5% or less. The weight% of chromium of the substrate can be about 16%, 17%, 18%, 19%, 20%, 21%, 22% or 23%. The chromium weight% of the coated substrate can be greater than, about, or less than the chromium weight% of the uncoated substrate.
可從供應商購買基材。可在製備基材的同一天以含金屬層塗佈基材。可在塗佈含金屬層之前大於約2天、3天、1週、1個月或1年或更長時間來製備基材。可在塗佈含金屬層之前少於約1年、1個月、1週、3天或少於2天來製備基材。可在添加金屬層至基材的至少約30秒、1分鐘、5分鐘、10分鐘、30分鐘、1小時、2小時、3小時、4小時、5小時、6小時、7小時、8小時、9小時、10小時、11小時、12小時或更長時間內添加還原金屬至基材。可在添加金屬層至基材的不超過約12小時、11小時、10小時、9小時、8小時、7小時、6小時、或少於約5小時、4小時、3小時、2小時、1小時、30分鐘、10分鐘、5分鐘、1分鐘、30秒或更短時間內添加還原金屬至基材。在一些實例中,在添加金屬層至基材的約10秒、20秒、30秒、1分鐘、5分鐘、10分鐘、20分鐘、30分鐘、45分鐘、60分鐘、1小時、2小時、3小時、4小時、6小時、8小時、10小時、12小時、18小時、24小時內或在約2天內添加還原金屬至基材。Substrates can be purchased from suppliers. The substrate can be coated with the metal-containing layer on the same day the substrate is prepared. The substrate can be prepared more than about 2 days, 3 days, 1 week, 1 month, or 1 year or more before coating the metal-containing layer. The substrate can be prepared less than about 1 year, 1 month, 1 week, 3 days, or less than 2 days before coating the metal-containing layer. The metal layer can be added to the substrate at least about 30 seconds, 1 minute, 5 minutes, 10 minutes, 30 minutes, 1 hour, 2 hours, 3 hours, 4 hours, 5 hours, 6 hours, 7 hours, 8 hours, Add reducing metal to the substrate for 9 hours, 10 hours, 11 hours, 12 hours or longer. Can add the metal layer to the substrate no more than about 12 hours, 11 hours, 10 hours, 9 hours, 8 hours, 7 hours, 6 hours, or less than about 5 hours, 4 hours, 3 hours, 2 hours, 1 Add reducing metal to the substrate in hours, 30 minutes, 10 minutes, 5 minutes, 1 minute, 30 seconds or less. In some examples, after adding the metal layer to the substrate about 10 seconds, 20 seconds, 30 seconds, 1 minute, 5 minutes, 10 minutes, 20 minutes, 30 minutes, 45 minutes, 60 minutes, 1 hour, 2 hours, Add the reduced metal to the substrate within 3 hours, 4 hours, 6 hours, 8 hours, 10 hours, 12 hours, 18 hours, 24 hours, or within about 2 days.
本發明提供用於在鄰接基材形成金屬層之方法。金屬層可藉由施覆鄰接基材之漿液來形成。沉積鄰接基材之漿液可形成鄰接基材之含金屬層。在一些情況下,漿液包含合金化劑、金屬轉移活化劑及溶劑,且其中該合金化劑包含金屬。The present invention provides a method for forming a metal layer adjacent to a substrate. The metal layer can be formed by applying a slurry adjacent to the substrate. Depositing the slurry adjacent to the substrate can form a metal-containing layer adjacent to the substrate. In some cases, the slurry includes an alloying agent, a metal transfer activator, and a solvent, and wherein the alloying agent includes a metal.
在一些情況下,含金屬層包含碳。在一些情況下,含金屬層包含鐵、鉻、鎳、矽、釩、鈦、硼、鎢、鋁、鉬、鈷、錳、鋯、鈮及其組合中之一者或多者。該合金化劑可選自由矽鐵(FeSi)、鉻鐵(FeCr)、鉻及其組合組成之群。In some cases, the metal-containing layer contains carbon. In some cases, the metal-containing layer includes one or more of iron, chromium, nickel, silicon, vanadium, titanium, boron, tungsten, aluminum, molybdenum, cobalt, manganese, zirconium, niobium, and combinations thereof. The alloying agent can be selected from the group consisting of FeSi, FeCr, chromium and combinations thereof.
漿液可包含金屬氧化物。金屬氧化物可包括但不限於Al2 O3 、MgO、CaO、Cr2 O3 、TiO2 、FeCr2 O4 、SiO2 、Ta2 O5 或MgCr2 O4 或其組合。可將金屬氧化物直接併入至漿液中。金屬氧化物可藉由元素金屬與熱力學上較不穩定的金屬氧化物之間的金屬熱還原反應在漿液中形成。適宜之元素金屬及熱力學上較不穩定之金屬氧化物對可選自其吉布斯自由形成能因金屬氧化物氧化元素金屬而減少之對。金屬熱還原反應可自發發生。金屬熱還原反應可在金屬轉移活化劑(諸如鹵化物、金屬鹵化物、金屬硫化物或氣態物質)之存在下發生。金屬氧化物可包含粉末。The slurry may contain metal oxides. The metal oxide may include, but is not limited to, Al 2 O 3 , MgO, CaO, Cr 2 O 3 , TiO 2 , FeCr 2 O 4 , SiO 2 , Ta 2 O 5, or MgCr 2 O 4 or a combination thereof. The metal oxide can be incorporated directly into the slurry. The metal oxide can be formed in the slurry by the metal thermal reduction reaction between the elemental metal and the thermodynamically unstable metal oxide. Suitable elemental metal and thermodynamically unstable metal oxide pairs can be selected from the pairs whose Gibbs free formation energy is reduced by the oxidation of elemental metals by metal oxides. The thermal reduction of metals can occur spontaneously. The metal thermal reduction reaction can occur in the presence of a metal transfer activator (such as a halide, a metal halide, a metal sulfide, or a gaseous substance). The metal oxide may include powder.
漿液可包括金屬轉移活化劑,該金屬轉移活化劑係經組態以將金屬物質自漿液攜帶至基材之表面。金屬轉移活化劑可包含鹵化物、金屬鹵化物、硫化物或氫氣。可在漿液製備期間例如藉由添加一或多種粉末來引入金屬轉移活化劑。可在自外源來源形成漿液之後引入金屬轉移活化劑,諸如在將漿液層施加至基材之後使氫氣擴散至漿液層中。在一些情況下,金屬轉移活化劑包含一價金屬、二價金屬或三價金屬。在一些情況下,該金屬轉移活化劑係選自由以下組成之群:氯化鎂(MgCl2 )、氯化鐵(II) (FeCl2 )、氯化鈣(CaCl2 )、氯化鋯(IV) (ZrCl4 )、氯化鈦(IV) (TiCl4 )、氯化鈮(V) (NbCl5 )、氯化鈦(III) (TiCl3 )、四氯化矽(SiCl4 )、氯化釩(III) (VCl3 )、氯化鉻(III) (CrCl3 )、三氯矽烷(SiHCl3 )、氯化錳(II) (MnCl2 )、氯化鉻(II) (CrCl2 )、氯化鈷(II) (CoCl2 )、氯化銅(II) (CuCl2 )、氯化鎳(II) (NiCl2 )、氯化釩(II) (VCl2 )、氯化銨(NH4 Cl)、氯化鈉(NaCl)、氯化鉀(KCl)、硫化鉬(MoS)、硫化錳(MnS)、二硫化鐵(FeS2 )、硫化鉻(CrS)、硫化鐵(FeS)、硫化銅(CuS)、硫化鎳(NiS)及其組合。在一些實施例中,鹵化物活化劑係水合的。在一些實施例中,鹵化物活化劑係選自由四水合氯化鐵(FeCl2 ·4H2 O)、六水合氯化鐵(FeCl2 ·6H2 O)及六水合氯化鎂(MgCl2 ·6H2 O)組成之群。在一些實施例中,鹵化物活化劑係水合的。在一些實施例中,鹵化物活化劑係選自由四水合氯化鐵(FeCl2 ·4H2 O)、六水合氯化鐵(FeCl2 ·6H2 O)及六水合氯化鎂(MgCl2 ·6H2 O)組成之群。The slurry may include a metal transfer activator that is configured to carry the metal material from the slurry to the surface of the substrate. The metal transfer activator may include halide, metal halide, sulfide, or hydrogen. The metal transfer activator can be introduced during slurry preparation, for example, by adding one or more powders. The metal transfer activator may be introduced after the slurry is formed from an external source, such as to diffuse hydrogen gas into the slurry layer after the slurry layer is applied to the substrate. In some cases, the metal transfer activator includes a monovalent metal, a divalent metal, or a trivalent metal. In some cases, the metal transfer activator is selected from the group consisting of magnesium chloride (MgCl 2 ), iron (II) chloride (FeCl 2 ), calcium chloride (CaCl 2 ), zirconium (IV) chloride ( ZrCl 4 ), titanium (IV) chloride (TiCl 4 ), niobium (V) chloride (NbCl 5 ), titanium (III) chloride (TiCl 3 ), silicon tetrachloride (SiCl 4 ), vanadium chloride ( III) (VCl 3 ), chromium(III) chloride (CrCl 3 ), trichlorosilane (SiHCl 3 ), manganese(II) chloride (MnCl 2 ), chromium(II) chloride (CrCl 2 ), chlorinated Cobalt(II) (CoCl 2 ), copper(II) chloride (CuCl 2 ), nickel(II) chloride (NiCl 2 ), vanadium(II) chloride (VCl 2 ), ammonium chloride (NH 4 Cl) , Sodium chloride (NaCl), potassium chloride (KCl), molybdenum sulfide (MoS), manganese sulfide (MnS), iron disulfide (FeS 2 ), chromium sulfide (CrS), iron sulfide (FeS), copper sulfide ( CuS), nickel sulfide (NiS) and combinations thereof. In some embodiments, the halide activator is hydrated. In some embodiments, the halide activator is selected from the group consisting of iron chloride tetrahydrate (FeCl 2 ·4H 2 O), iron chloride hexahydrate (FeCl 2 ·6H 2 O) and magnesium chloride hexahydrate (MgCl 2 ·6H 2 O) Group of composition. In some embodiments, the halide activator is hydrated. In some embodiments, the halide activator is selected from the group consisting of iron chloride tetrahydrate (FeCl 2 ·4H 2 O), iron chloride hexahydrate (FeCl 2 ·6H 2 O) and magnesium chloride hexahydrate (MgCl 2 ·6H 2 O) Group of composition.
在一些情況下,在將含金屬層退火至基材之後,鄰接基材形成金屬層。在一些情況下,金屬層包含碳。在一些情況下,金屬層包含鐵、鉻、鎳、矽、釩、鈦、硼、鎢、鋁、鉬、鈷、錳、鋯、鈮及其組合中之一者或多者。在一些實施例中,合金化劑係選自由矽鐵(FeSi)、鉻鐵(FeCr)、鉻及其組合組成之群。In some cases, after annealing the metal-containing layer to the substrate, the metal layer is formed adjacent to the substrate. In some cases, the metal layer contains carbon. In some cases, the metal layer includes one or more of iron, chromium, nickel, silicon, vanadium, titanium, boron, tungsten, aluminum, molybdenum, cobalt, manganese, zirconium, niobium, and combinations thereof. In some embodiments, the alloying agent is selected from the group consisting of ferrosilicon (FeSi), ferrochromium (FeCr), chromium, and combinations thereof.
漿液可包含溶劑。溶劑可係水性或有機。溶劑可包括水、甲醇、乙醇、異丙醇、丙酮或甲基乙基酮。溶劑之沸點(或沸騰溫度)可係低於或等於約200℃、190℃、180℃、170℃、160℃、150℃、140℃、130℃、120℃、110℃或100℃或更低。溶劑之沸點可係高於或等於約100℃、110℃、120℃、130℃、140℃、150℃、160℃、170℃、180℃、190℃、或高於約200℃或更高。The slurry may contain a solvent. The solvent can be water-based or organic. The solvent may include water, methanol, ethanol, isopropanol, acetone, or methyl ethyl ketone. The boiling point (or boiling temperature) of the solvent can be lower than or equal to about 200℃, 190℃, 180℃, 170℃, 160℃, 150℃, 140℃, 130℃, 120℃, 110℃ or 100℃ or lower . The boiling point of the solvent may be higher than or equal to about 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, 170°C, 180°C, 190°C, or higher than about 200°C or higher.
在一些情況下,漿液包含惰性物質。漿液可藉由在混合腔室(或容器)中混合各種組分來形成。各種組分可在相同時間或依序混合。例如,在腔室中提供溶劑且於隨後將元素物質添加至腔室中。為防止結塊,可將乾成分以受控量添加至溶劑。一些元素金屬可呈乾粉末形式。In some cases, the slurry contains inert materials. The slurry can be formed by mixing various components in a mixing chamber (or container). The various components can be mixed at the same time or sequentially. For example, a solvent is provided in the chamber and then elemental substances are added to the chamber. To prevent caking, dry ingredients can be added to the solvent in controlled amounts. Some elemental metals may be in dry powder form.
用於混合含金屬層組分之葉片可呈攪動件、叉子或槳之形狀。可使用超過一個葉片來混合漿液組分。每個葉片可具有不同形狀或相同形狀。乾成分可以受控量添加至溶劑以防止結塊。高剪切速率可用於幫助控制黏度。在漿液中,鉻顆粒之尺寸可比其他顆粒大,且可在不添加高聚合物下懸浮。The blade used for mixing the components of the metal-containing layer may be in the shape of a stirring member, fork or paddle. More than one blade can be used to mix the slurry components. Each blade may have a different shape or the same shape. Dry ingredients can be added to the solvent in controlled amounts to prevent caking. High shear rates can be used to help control viscosity. In the slurry, the size of chromium particles can be larger than other particles, and can be suspended without adding high polymer.
漿液之性質可係用於形成該漿液、維持該漿液或沉積該漿液之一或多個參數之函數。此類性質可包括黏度、剪切稀薄指數及屈服應力。此類性質可包括雷諾數(Reynolds number)、黏度、pH及漿液組分濃度。可影響漿液之性質之參數可包括水含量、元素物質身份及含量、溫度、剪切速率及混合時間。The properties of the slurry can be a function of one or more parameters used to form the slurry, maintain the slurry, or deposit the slurry. Such properties can include viscosity, shear thinness index, and yield stress. Such properties may include Reynolds number, viscosity, pH, and slurry component concentration. The parameters that can affect the properties of the slurry can include water content, element identity and content, temperature, shear rate, and mixing time.
圖1說明一種形成鄰接基材之金屬層之方法。在操作110
中,提供金屬組合物。接下來,在操作120
中,可將漿液從混合容器施加至基材以形成金屬層。在操作130
中,施塗後,藉由在約90℃至175℃下加熱或真空乾燥約10至60秒,除去漿液中之溶劑。在操作140
中,軋製或以其他方式製備網狀物或基材材料以進行熱處理。在操作150
中,鄰接基材退火金屬層。Figure 1 illustrates a method of forming a metal layer adjacent to a substrate. In
圖2說明以金屬層塗佈之後的鋼基材之圖像。晶粒尺寸及變異係數可根據美國國際測試與材料協會(American Society of the International Association for Testing and Materials) (ASTM)標准進行計算。Figure 2 illustrates an image of a steel substrate after coating with a metal layer. The grain size and coefficient of variation can be calculated according to the American Society of the International Association for Testing and Materials (ASTM) standard.
該漿液可展現觸變行為,其中該漿液在經受剪切應變時展現降低之黏度。漿液之剪切稀薄指數可為約1至約8。為達到靶黏度,可以高剪切速率發生混合。剪切速率可為約1 s-1 至約10,000 s-1 (或Hz)。剪切速率可為約1 s-1 、約10 s-1 、約100 s-1 、約1,000 s-1 、約5,000 s-1 或約10,000 s-1 。剪切速率可為至少約1 s-1 、約10 s-1 、約100 s-1 、約1,000 s-1 、約5,000 s-1 或至少約10,000 s-1 或更大。剪切速率可為小於約10,000 s-1 、5,000 s-1 、1,000 s-1 、100 s-1 、10 s-1 、或小於約1 s-1 或更小。The slurry can exhibit thixotropic behavior, where the slurry exhibits a reduced viscosity when subjected to shear strain. The shear thinness index of the slurry can be from about 1 to about 8. To achieve the target viscosity, mixing can occur at a high shear rate. The shear rate may be about 1 s -1 to about 10,000 s -1 (or Hz). The shear rate may be about 1 s -1 , about 10 s -1 , about 100 s -1 , about 1,000 s -1 , about 5,000 s -1, or about 10,000 s -1 . The shear rate may be at least about 1 s -1 , about 10 s -1 , about 100 s -1 , about 1,000 s -1 , about 5,000 s -1, or at least about 10,000 s -1 or greater. The shear rate may be less than about 10,000 s -1 , 5,000 s -1 , 1,000 s -1 , 100 s -1 , 10 s -1 , or less than about 1 s -1 or less.
漿液之剪切速率可在各種儀器上進行測量。剪切速率可在例如TA Instruments DHR-2流變儀上進行測量。漿液之剪切速率可取決於用於進行測量之儀器而不同。The shear rate of the slurry can be measured on various instruments. The shear rate can be measured on, for example, a TA Instruments DHR-2 rheometer. The shear rate of the slurry can vary depending on the instrument used to make the measurement.
為達成靶黏度或預定黏度,可進行混合約1分鐘至2小時之時間。混合時間可為少於約30分鐘。漿液混合之時間越長,漿液之黏度會降低。混合時間可對應於均質化漿液所用的時間長度。In order to achieve the target viscosity or predetermined viscosity, mixing can be carried out for a period of about 1 minute to 2 hours. The mixing time can be less than about 30 minutes. The longer the slurry is mixed, the viscosity of the slurry will decrease. The mixing time may correspond to the length of time used to homogenize the slurry.
適當混合狀態可係漿液在表面上不具有水之狀態。適當混合狀態可係在容器底部上無固體之狀態。該漿液看起來在顏色及質地上係均勻的。The proper mixing state can be a state where the slurry does not have water on the surface. The proper mixing state can be the state without solids on the bottom of the container. The slurry appears to be uniform in color and texture.
含金屬層之所需黏度可係適於輥塗之黏度。漿液之黏度可為約1厘泊(cP)、5 cP、10 cP、50 cP、100 cP、200 cP、500 cP、1,000 cP、10,000 cP、100,000 cP、1,000,000 cP或約5,000,000 cP。漿液之黏度可為至少約1 cP、5 cP、10 cP、50 cP、100 cP、200 cP、500 cP、1,000 cP、10,000 cP、100,000 cP、1,000,000 cP或約5,000,000 cP。漿液之黏度可為不大於約5,000,000 cP、1,000,000 cP、100,000 cP、10,000 cP、5,000 cP、1,000 cP、500 cP、200 cP、100 cP、50 cP、10 cP、5 cP或不大於約1 cP。漿液之黏度可為約1 cP至5,000,000 cP。漿液之黏度可為約1 cP、約5 cP、約10 cP、約50 cP、約100 cP、約200 cP、約500 cP、約1,000 cP、約10,000 cP、約100,000 cP、約1,000,000 cP或約5,000,000 cP。漿液之黏度可為約1 cP至1,000,000 cP或100厘泊(cP)至100,000 cP。漿液之黏度可取決於剪切速率。漿液之黏度可為約200 cP至約10,000 cP或約600 cP至約800 cP。在具有約1000 s-1 至約1000000 s-1 之剪切速率之應用剪切窗中,漿液可為約100 cP至約200 cP。漿液之毛細管數可為約0.01、0.05、0.1、0.5、1、2、3、4、5、6、7、8、9或約10。漿液之毛細管數可為至少約0.01、0.05、0.1、0.5、1、2、3、4、5、6、7、8、9或約10或更大。漿液之毛細管數可為不大於約10、9、8、7、6、5、4、3、2、1、0.5、0.1、0.05或不大於約0.01或更小。漿液之屈服應力可為約0.0001帕斯卡(Pa)、0.001 Pa、0.01 Pa、0.1 Pa、0.2 Pa、0.3 Pa、0.4 Pa、0.5 Pa、0.6 Pa、0.7 Pa、0.8 Pa、0.9 Pa或約1 Pa。漿液之屈服應力可為至少約0.0001帕斯卡(Pa)、0.001 Pa、0.01 Pa、0.1 Pa、0.2 Pa、0.3 Pa、0.4 Pa、0.5 Pa、0.6 Pa、0.7 Pa、0.8 Pa、0.9 Pa或至少約1 Pa或更大。漿液之屈服應力可為不大於1 Pa、0.9 Pa、0.8 Pa、0.7 Pa、0.6 Pa、0.5 Pa、0.4 Pa、0.3 Pa、0.2 Pa、0.1 Pa、0.01 Pa、0.001 Pa或不大於0.001 Pa或更小。The required viscosity of the metal-containing layer can be the viscosity suitable for roll coating. The viscosity of the slurry can be about 1 centipoise (cP), 5 cP, 10 cP, 50 cP, 100 cP, 200 cP, 500 cP, 1,000 cP, 10,000 cP, 100,000 cP, 1,000,000 cP, or about 5,000,000 cP. The viscosity of the slurry can be at least about 1 cP, 5 cP, 10 cP, 50 cP, 100 cP, 200 cP, 500 cP, 1,000 cP, 10,000 cP, 100,000 cP, 1,000,000 cP, or about 5,000,000 cP. The viscosity of the slurry can be no more than about 5,000,000 cP, 1,000,000 cP, 100,000 cP, 10,000 cP, 5,000 cP, 1,000 cP, 500 cP, 200 cP, 100 cP, 50 cP, 10 cP, 5 cP, or no more than about 1 cP. The viscosity of the slurry can be about 1 cP to 5,000,000 cP. The viscosity of the slurry can be about 1 cP, about 5 cP, about 10 cP, about 50 cP, about 100 cP, about 200 cP, about 500 cP, about 1,000 cP, about 10,000 cP, about 100,000 cP, about 1,000,000 cP, or about 5,000,000 cP. The viscosity of the slurry can be about 1 cP to 1,000,000 cP or 100 centipoise (cP) to 100,000 cP. The viscosity of the slurry can depend on the shear rate. The viscosity of the slurry may be about 200 cP to about 10,000 cP or about 600 cP to about 800 cP. In an application shear window having a shear rate of about 1000 s -1 to about 1,000,000 s -1 , the slurry may be about 100 cP to about 200 cP. The number of capillaries of the slurry can be about 0.01, 0.05, 0.1, 0.5, 1, 2, 3, 4, 5, 6, 7, 8, 9, or about 10. The number of capillaries of the slurry can be at least about 0.01, 0.05, 0.1, 0.5, 1, 2, 3, 4, 5, 6, 7, 8, 9, or about 10 or more. The number of capillaries of the slurry can be no more than about 10, 9, 8, 7, 6, 5, 4, 3, 2, 1, 0.5, 0.1, 0.05, or no more than about 0.01 or less. The yield stress of the slurry can be about 0.0001 Pascal (Pa), 0.001 Pa, 0.01 Pa, 0.1 Pa, 0.2 Pa, 0.3 Pa, 0.4 Pa, 0.5 Pa, 0.6 Pa, 0.7 Pa, 0.8 Pa, 0.9 Pa, or about 1 Pa. The yield stress of the slurry may be at least about 0.0001 Pascal (Pa), 0.001 Pa, 0.01 Pa, 0.1 Pa, 0.2 Pa, 0.3 Pa, 0.4 Pa, 0.5 Pa, 0.6 Pa, 0.7 Pa, 0.8 Pa, 0.9 Pa or at least about 1. Pa or greater. The yield stress of the slurry can be no more than 1 Pa, 0.9 Pa, 0.8 Pa, 0.7 Pa, 0.6 Pa, 0.5 Pa, 0.4 Pa, 0.3 Pa, 0.2 Pa, 0.1 Pa, 0.01 Pa, 0.001 Pa or no more than 0.001 Pa or more small.
漿液之沉降速率對於分離或沉降可係穩定持續大於約一分鐘、大於約15分鐘、大於約1小時、大於約1天、大於約1個月或大於約1年。漿液之沉降速率可指在沉降發生之前,或在黏度增加至不適於輥塗之值之前,漿液在不混合下能夠經受之時間。類似地,漿液之貨架期可指在漿液增稠至不適於輥塗之程度之前,漿液在不混合下可經受之時間。然而,即使漿液沉降並增稠,漿液可經再混合至其初始黏度。漿液之觸變指數可係穩定的,使得漿液不會在輥塗組件之鍋中之死點(dead spot)處稠化至不適宜水平。The sedimentation rate of the slurry can be stable for separation or sedimentation for greater than about one minute, greater than about 15 minutes, greater than about 1 hour, greater than about 1 day, greater than about 1 month, or greater than about 1 year. The sedimentation rate of the slurry can refer to the time that the slurry can withstand without mixing before the sedimentation occurs, or before the viscosity increases to a value that is not suitable for roll coating. Similarly, the shelf life of a slurry can refer to the time the slurry can withstand without mixing before the slurry thickens to an extent unsuitable for roll coating. However, even if the slurry settles and thickens, the slurry can be remixed to its original viscosity. The thixotropic index of the slurry can be stable, so that the slurry will not thicken to an unsuitable level at the dead spot in the pan of the roller coating component.
漿液之黏度可藉由在混合期間添加酸至漿液來控制氫結合之程度來控制。此外,可在混合期間添加酸或鹼至漿液以控制漿液之pH水平。漿液之pH可為約3、4、5、6、7、8、9、10、11或約12。漿液之pH水平可為至少約3、4、5、6、7、8、9、10、11或至少約12或更高。漿液之pH水平可為不大於約12、11、10、9、8、7、6、5、4或不大於約3或更小。漿液之pH水平可為約3至約12。漿液之pH水平可為約5至約8。漿液之pH水平可為約3、約4、約5、約6、約7、約8、約9、約10、約11或約12。漿液之pH水平可隨著漿液之沉降而變化。在漿液沉降之後再混合漿液可使漿液之pH水平恢復至初始pH水平。可添加不同含量之黏結劑(例如金屬乙酸鹽)至漿液以增加漿液中之生坯強度。漿液可不包含黏結劑。漿液可包括經組態以充當黏結劑之金屬轉移活化劑。The viscosity of the slurry can be controlled by adding acid to the slurry during mixing to control the degree of hydrogen bonding. In addition, acid or alkali can be added to the slurry during mixing to control the pH level of the slurry. The pH of the slurry can be about 3, 4, 5, 6, 7, 8, 9, 10, 11, or about 12. The pH level of the slurry can be at least about 3, 4, 5, 6, 7, 8, 9, 10, 11, or at least about 12 or higher. The pH level of the slurry may be no greater than about 12, 11, 10, 9, 8, 7, 6, 5, 4, or no greater than about 3 or less. The pH level of the slurry can be from about 3 to about 12. The pH level of the slurry can be from about 5 to about 8. The pH level of the slurry can be about 3, about 4, about 5, about 6, about 7, about 8, about 9, about 10, about 11, or about 12. The pH level of the slurry can change as the slurry settles. After the slurry settles, mixing the slurry can restore the pH level of the slurry to the initial pH level. Different amounts of binder (such as metal acetate) can be added to the slurry to increase the green strength in the slurry. The slurry may not contain a binder. The slurry may include a metal transfer activator configured to act as a binder.
漿液之流動性可藉由傾斜試驗來測量。傾斜試驗可指示屈服應力及黏度。作為替代,流變儀可用於測量漿液之流動性。The fluidity of the slurry can be measured by the tilt test. Tilt test can indicate yield stress and viscosity. As an alternative, a rheometer can be used to measure the fluidity of the slurry.
漿液之乾燥時間可係足夠長,使得漿液在輥塗製程期間保持為濕潤且直至將漿液之塗層施覆至基材之後才會乾燥。漿液在室溫下可能不會乾燥。在對輥塗線之乾燥區進行加熱約十秒之後,漿液可變得乾燥。所施加熱量之溫度可為約120℃。The drying time of the slurry can be long enough so that the slurry remains wet during the roll coating process and will not dry until the coating of the slurry is applied to the substrate. The slurry may not dry out at room temperature. After heating the drying zone of the roll coating line for about ten seconds, the slurry can become dry. The temperature of the applied heat may be about 120°C.
漿液之比重可為約1、2、3、4、5、6、7、8、9或約10 g/cm3 。漿液之比重可為至少約1、2、3、4、5、6、7、8、9、或至少約10 g/cm3 或更高。漿液之比重可為不大於約10、9、8、7、6、5、4、3、2、或不大於約1 g/cm3 或更低。漿液之生坯強度可係使得漿液能夠承受輥塗從使得經漿液塗佈之基材不損壞。例如,輥塗後,在鄰接塗裝室之乾燥烘箱中乾燥的漿液之乾膜可具有允許膜承受力之生坯強度,該力以交替負方向及正方向彎曲膜成直徑約20英寸之弧二十次。漿液之乾膜之生坯強度可進一步允許該膜以少量粉末化通過膠帶試驗。膠帶試驗可涉及使一片膠帶與經塗佈材料之表面接觸。一旦從經塗佈材料之表面除去,膠帶可能足夠透明以可透視已黏附至膠帶之任何粉末。The specific gravity of the slurry can be about 1, 2, 3, 4, 5, 6, 7, 8, 9, or about 10 g/cm 3 . The specific gravity of the slurry may be at least about 1, 2, 3, 4, 5, 6, 7, 8, 9, or at least about 10 g/cm 3 or higher. The specific gravity of the slurry can be no more than about 10, 9, 8, 7, 6, 5, 4, 3, 2, or no more than about 1 g/cm 3 or less. The green strength of the slurry can be such that the slurry can withstand roll coating so that the substrate coated with the slurry is not damaged. For example, after roll coating, the dry film of the slurry dried in the drying oven adjacent to the coating room can have a green strength that allows the film to withstand a force that bends the film into an arc with a diameter of about 20 inches in alternating negative and positive directions Twenty times. The green strength of the dry film of the slurry can further allow the film to pass the tape test with a small amount of powder. The tape test may involve contacting a piece of tape with the surface of the coated material. Once removed from the surface of the coated material, the tape may be transparent enough to see through any powder that has adhered to the tape.
可在基材上形成金屬層之前將漿液施覆至基材。可將漿液以均勻厚度施覆於基材上方。可將漿液以不同厚度施覆於基材上方。所施覆漿液塗層之平均厚度可為約0.0001”、0.0005”、0.001”、0.002”、0.003”、0.004”、0.005”、0.006”、0.007”、0.008”、0.009”、0.01”、0.02”、0.03”、0.04”、0.05”、0.06”、0.07”、0.08”、0.09”、0.1”、0.125、0.25、0.5”。所施覆漿液塗層之平均厚度可為至少約0.0001”、0.0005”、0.001”、0.002”、0.003”、0.004”、0.005”、0.006”、0.007”、0.008”、0.009”、0.01”、0.02”、0.03”、0.04”、0.05”、0.06”、0.07”、0.08”、0.09”、0.1”、0.125、0.25、0.5或更大。所施覆漿液塗層之平均厚度可為不大於約0.5”、0.25”、0.125”、0.1”、0.09”、0.08”、0.07”、0.06”、0.05”、0.04”、0.03”、0.02”、0.01”、0.009”、0.008”、0.007”、0.006”、0.005”、0.004”、0.003”、0.002”、0.001”、0.0005”、0.0001”或更小。The slurry can be applied to the substrate before the metal layer is formed on the substrate. The slurry can be applied to the substrate with a uniform thickness. The slurry can be applied over the substrate in different thicknesses. The average thickness of the applied slurry coating can be about 0.0001", 0.0005", 0.001", 0.002", 0.003", 0.004", 0.005", 0.006", 0.007", 0.008", 0.009", 0.01", 0.02" , 0.03", 0.04", 0.05", 0.06", 0.07", 0.08", 0.09", 0.1", 0.125, 0.25, 0.5". The average thickness of the applied slurry coating can be at least about 0.0001", 0.0005", 0.001", 0.002", 0.003", 0.004", 0.005", 0.006", 0.007", 0.008", 0.009", 0.01", 0.02 ", 0.03", 0.04", 0.05", 0.06", 0.07", 0.08", 0.09", 0.1", 0.125, 0.25, 0.5 or greater. The average thickness of the applied slurry coating can be no more than about 0.5 ", 0.25", 0.125", 0.1", 0.09", 0.08", 0.07", 0.06", 0.05", 0.04", 0.03", 0.02", 0.01", 0.009", 0.008", 0.007", 0.006", 0.005", 0.004", 0.003", 0.002", 0.001", 0.0005", 0.0001" or less.
漿液可以特定厚度鄰接基材之一或多個表面施覆。所施覆漿液塗層之厚度可於表面上方相對均勻或可變化。所施覆漿液塗層之厚度可從基材之一個表面至另一個表面變化。可在任何時間,包括緊接於施覆之後,乾燥期間,或在已除去所有溶劑之後,測量鄰接基材之所施覆漿液塗層之厚度。若基材表面之至少90%、95%、99%或更多具有與所施覆漿液塗層之平均厚度偏差不大於約1%、2%、3%、4%、5%、6%、7%、8%、9%、10%、11%、12%、13%、14%、15%、16%、17%、18%、19%或約20%之漿液塗層,則所施覆漿液塗層可視作實質上均勻。The slurry can be applied adjacent to one or more surfaces of the substrate in a specific thickness. The thickness of the applied slurry coating can be relatively uniform or variable over the surface. The thickness of the applied slurry coating can vary from one surface of the substrate to another surface. The thickness of the applied slurry coating adjacent to the substrate can be measured at any time, including immediately after application, during drying, or after all solvents have been removed. If at least 90%, 95%, 99% or more of the surface of the substrate has a deviation from the average thickness of the applied slurry coating not more than about 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19% or about 20% of the slurry coating is applied The slurry coating can be regarded as substantially uniform.
鄰接基材之一或多個表面施覆的漿液塗層在乾燥之前或之後之平均施覆厚度可為約5 µm、10 µm、15 µm、20 µm、25 µm、30 µm、40 µm、50 µm、60 µm、70 µm、80 µm、90 µm、100 µm、150 µm、200 µm、250 µm、300 µm、400 µm、500 µm、600 µm、700 µm、800 µm、900 µm、1 mm、2 mm、5 mm或約1 cm。鄰接基材之一或多個表面施覆的漿液塗層在乾燥之前或之後之平均施覆厚度可為至少約5 µm、10 µm、15 µm、20 µm、25 µm、30 µm、40 µm、50 µm、60 µm、70 µm、80 µm、90 µm、100 µm、150 µm、200 µm、250 µm、300 µm、400 µm、500 µm、600 µm、700 µm、800 µm、900 µm、1 mm、2 mm、5 mm或約1 cm。鄰接基材之一或多個表面施覆的漿液塗層在乾燥之前或之後之塗覆厚度可為不大於約1 cm、5 mm、2 mm、1 mm、900 µm、800 µm、700 µm、600 µm、500 µm、400 µm、300 µm、250 µm、200 µm、150 µm、100 µm、90 µm、80 µm、70 µm、60 µm、50 µm、40 µm、30 µm、25 µm、20 µm、15 µm、10 µm、或5 µm或更小。The average coating thickness of the slurry coating applied on one or more surfaces adjacent to the substrate before or after drying can be about 5 µm, 10 µm, 15 µm, 20 µm, 25 µm, 30 µm, 40 µm, 50 µm, 60 µm, 70 µm, 80 µm, 90 µm, 100 µm, 150 µm, 200 µm, 250 µm, 300 µm, 400 µm, 500 µm, 600 µm, 700 µm, 800 µm, 900 µm, 1 mm, 2 mm, 5 mm, or about 1 cm. The average application thickness of the slurry coating applied on one or more surfaces adjacent to the substrate before or after drying can be at least about 5 µm, 10 µm, 15 µm, 20 µm, 25 µm, 30 µm, 40 µm, 50 µm, 60 µm, 70 µm, 80 µm, 90 µm, 100 µm, 150 µm, 200 µm, 250 µm, 300 µm, 400 µm, 500 µm, 600 µm, 700 µm, 800 µm, 900 µm, 1 mm , 2 mm, 5 mm, or about 1 cm. The coating thickness of the slurry coating applied on one or more surfaces adjacent to the substrate before or after drying can be no more than about 1 cm, 5 mm, 2 mm, 1 mm, 900 µm, 800 µm, 700 µm, 600 µm, 500 µm, 400 µm, 300 µm, 250 µm, 200 µm, 150 µm, 100 µm, 90 µm, 80 µm, 70 µm, 60 µm, 50 µm, 40 µm, 30 µm, 25 µm, 20 µm , 15 µm, 10 µm, or 5 µm or less.
漿液中之元素物質可根據濃度梯度擴散至基材或擴散進入至基材中。例如,含金屬層中元素物質之濃度在基材之表面上可係最高且可根據沿著基材之深度之梯度而降低。濃度之降低可係線性、拋物線、高斯或其任何組合。含金屬層中元素物質之濃度可基於意欲形成於基材上之合金層之所需厚度來選擇。The element substances in the slurry can diffuse into the substrate or diffuse into the substrate according to the concentration gradient. For example, the concentration of the elemental substance in the metal-containing layer may be highest on the surface of the substrate and may decrease according to the gradient along the depth of the substrate. The decrease in concentration can be linear, parabolic, Gaussian, or any combination thereof. The concentration of the elemental substance in the metal-containing layer can be selected based on the desired thickness of the alloy layer to be formed on the substrate.
漿液中之元素物質可影響含金屬層對基材之黏附。此外,元素物質可影響含金屬層組合物之黏度。另外,元素物質可影響經含金屬層塗佈之基材之生坯強度。一般而言,生坯強度係指經含金屬層塗佈之基材在含金屬層完全固化之前承受處理或機器加工之能力。因此,可基於含金屬層對基材之所需黏附程度、含金屬層之所需黏度、及元素物質增加經含金屬層塗佈之基材之生坯強度之能力來選擇元素物質。此外,一些含金屬鹵化物可腐蝕輥塗組件之組件,該輥塗組件將含金屬層施覆至基材。此種腐蝕可能係非所欲的。元素物質可防止在含金屬層及基材之邊界界面形成柯肯德爾(Kirkendall)孔隙。加熱時,元素物質可分解為氧化物。此外,退火後,元素物質可變為惰性。各種元素物質之濃度可變化。Elemental substances in the slurry can affect the adhesion of the metal-containing layer to the substrate. In addition, elemental substances can affect the viscosity of the metal-containing layer composition. In addition, elemental substances can affect the green strength of the substrate coated with the metal-containing layer. Generally speaking, green strength refers to the ability of a substrate coated with a metal-containing layer to withstand treatment or machining before the metal-containing layer is fully cured. Therefore, the element material can be selected based on the required degree of adhesion of the metal-containing layer to the substrate, the required viscosity of the metal-containing layer, and the ability of the element material to increase the green strength of the substrate coated with the metal-containing layer. In addition, some metal-containing halides can corrode the components of the roll-coated components that apply the metal-containing layer to the substrate. Such corrosion may be undesirable. The element substance can prevent the formation of Kirkendall pores at the boundary interface between the metal-containing layer and the substrate. When heated, elemental substances can be decomposed into oxides. In addition, after annealing, the element material can become inert. The concentration of various element substances can vary.
可在施覆漿液至基材之前預處理該基材。可藉由使用化學品預處理基材以改性基材之表面以改良含金屬層對基材之表面之黏附。此類化學品之實例包括鉻酸鹽及磷酸鹽。The substrate can be pre-treated before applying the slurry to the substrate. The surface of the substrate can be modified by pretreating the substrate with chemicals to improve the adhesion of the metal-containing layer to the surface of the substrate. Examples of such chemicals include chromate and phosphate.
基材之表面可不含加工氧化物。此可藉由習知酸洗來達成。基材之表面可合理地不含有機材料。用市售清潔劑處理後,基材之表面可合理地不含有機材料。The surface of the substrate may not contain processing oxides. This can be achieved by conventional pickling. The surface of the substrate can be reasonably free of organic materials. After treatment with commercially available cleaners, the surface of the substrate can be reasonably free of organic materials.
可在製備基材期間從基材添加、去除或扣留晶粒釘扎顆粒以控制基材之晶粒尺寸。例如,可添加晶粒釘扎至基材以保持晶粒尺寸小並形成釘扎點。作為另一個實例,可將晶粒釘扎劑從基材扣留以允許晶粒生長大並允許進行電機層壓。晶粒釘扎劑在退火溫度下可不溶。Die pinning particles can be added, removed or detained from the substrate during the preparation of the substrate to control the grain size of the substrate. For example, die pinning can be added to the substrate to keep the die size small and form pinning points. As another example, a die pinning agent can be withheld from the substrate to allow the die to grow large and allow motor lamination. The grain pinning agent is insoluble at the annealing temperature.
晶粒釘扎顆粒之實例包括金屬間物、氮化物、碳化物、鈦之碳氮化物、鋁、鈮、釩及其任何組合。晶粒釘扎顆粒之非限制性實例包括氮化鈦(TiN)、碳化鈦(TiC)及氮化鋁(AlN)。鄰接基材之金屬層之形成 Examples of grain pinning particles include intermetallics, nitrides, carbides, carbonitrides of titanium, aluminum, niobium, vanadium, and any combination thereof. Non-limiting examples of grain pinning particles include titanium nitride (TiN), titanium carbide (TiC), and aluminum nitride (AlN). Formation of the metal layer adjacent to the substrate
漿液可鄰接基材施覆或沉積且鄰接該表面形成含金屬層。可退火含金屬層以形成鄰接基材之金屬層。漿液可藉由輥塗、分離塗佈、旋塗、狹縫塗佈、幕塗、滑動塗佈、擠出塗佈、漆塗、噴塗、靜電機制、印刷(例如,2-D印刷、3-D印刷、絲網印刷、圖案印刷)、氣相沉積(例如,化學氣相沉積)、電化學沉積、漿液沉積、浸塗、噴灑、其任何組合、或藉由任何其他適宜方法來施覆。The slurry can be applied or deposited adjacent to the substrate and form a metal-containing layer adjacent to the surface. The metal-containing layer can be annealed to form a metal layer adjacent to the substrate. The slurry can be applied by roller coating, split coating, spin coating, slit coating, curtain coating, sliding coating, extrusion coating, paint coating, spraying, electrostatic mechanism, printing (for example, 2-D printing, 3- D printing, screen printing, pattern printing), vapor deposition (for example, chemical vapor deposition), electrochemical deposition, slurry deposition, dip coating, spraying, any combination thereof, or application by any other suitable method.
漿液可藉由輥塗來施覆。輥塗製程可藉由提供基材(諸如鋼基材)開始。接下來,可退繞捲繞之基材。接下來,可將退繞鋼基材提供至輥塗機,該輥塗機可塗佈有含金屬層。接下來,可活化輥塗機使得輥塗機以含金屬層塗佈基材。可將基材饋送通過輥塗機經多個循環使得多次施覆含金屬層至基材。取決於含金屬層之性質,可能希望施覆多個塗層至基材。可施覆含金屬層之多個塗層至基材以達成所需漿液厚度。在多個塗層中之每一者中可使用不同調配物或含金屬層。含金屬層可以諸如形成圖案於基材上之方式進行施覆。圖案可呈例如網格、條紋、點、焊接標記或其任何組合之形式。相同基材上之多個塗層可在基材上形成分離塗層。The slurry can be applied by roller coating. The roll coating process can be started by providing a substrate (such as a steel substrate). Next, the wound substrate can be unwound. Next, the unwound steel substrate can be provided to a roll coater, which can be coated with a metal-containing layer. Next, the roll coater can be activated so that the roll coater coats the substrate with the metal-containing layer. The substrate can be fed through a roll coater through multiple cycles so that the metal-containing layer is applied to the substrate multiple times. Depending on the nature of the metal-containing layer, it may be desirable to apply multiple coatings to the substrate. Multiple coatings containing metal layers can be applied to the substrate to achieve the desired slurry thickness. Different formulations or metal-containing layers can be used in each of the multiple coatings. The metal-containing layer can be applied in a manner such as forming a pattern on the substrate. The pattern may be in the form of, for example, a grid, stripes, dots, welding marks, or any combination thereof. Multiple coatings on the same substrate can form separate coatings on the substrate.
漿液可鄰接基材進行施覆、沉積或退火。可在約0℃、25℃、50℃、75℃、100℃、200℃、300℃、400℃、500℃、600℃、700℃、800℃、900℃或1000℃之溫度下沉積漿液。可在至少約0℃、25℃、50℃、75℃、100℃、200℃、300℃、400℃、500℃、600℃、700℃、800℃、900℃或1000℃或更高之溫度下沉積漿液。可在不高於約1000℃、900℃、800℃、700℃、600℃、500℃、400℃、300℃、200℃、100℃、75℃、50℃、25℃或不高於約0℃或更低之溫度下沉積漿液。可在約0℃至1000℃之溫度下沉積漿液。可在約10℃至100℃之溫度下沉積漿液。可在約100℃至500℃之溫度下沉積漿液。可在約500℃至1000℃之溫度下沉積漿液。The slurry can be applied, deposited or annealed adjacent to the substrate. The slurry can be deposited at a temperature of about 0℃, 25℃, 50℃, 75℃, 100℃, 200℃, 300℃, 400℃, 500℃, 600℃, 700℃, 800℃, 900℃ or 1000℃. Can be at least about 0℃, 25℃, 50℃, 75℃, 100℃, 200℃, 300℃, 400℃, 500℃, 600℃, 700℃, 800℃, 900℃ or 1000℃ or higher temperature The slurry is deposited under. Can be at no higher than about 1000℃, 900℃, 800℃, 700℃, 600℃, 500℃, 400℃, 300℃, 200℃, 100℃, 75℃, 50℃, 25℃ or not higher than about 0 Deposit the slurry at a temperature of ℃ or lower. The slurry can be deposited at a temperature of about 0°C to 1000°C. The slurry can be deposited at a temperature of about 10°C to 100°C. The slurry can be deposited at a temperature of about 100°C to 500°C. The slurry can be deposited at a temperature of about 500°C to 1000°C.
可在相對濕度為約0%、5%、10%、20%、30%、40%、50%、60%、70%、80%、90%、95%或約99%之氛圍中發生基材上漿液之沉積。可在相對濕度為至少約0%、5%、10%、20%、30%、40%、50%、60%、70%、80%、90%、95%或至少約99%或更高之氛圍中發生基材上漿液之沉積。可在相對濕度為不大於約99%、95%、90%、80%、70%、60%、50%、40%、30%、20%、10%或不大於約5%或更小之氛圍中發生基材上漿液之沉積。可在絕對水分含量為至少約0.5托、1托、2托、5托、10托、20托、50托、100托、250托或至少約500托或更大之氛圍中發生基材上漿液之沉積。可在絕對水分含量為不大於約760托、500托、250托、100托、50托、20托、10托、5托、2托、1托或0.5托或更小之氛圍中發生基材上漿液之沉積。在一些實施例中,在含金屬層之沉積期間,相對濕度為約50%。It can occur in an atmosphere with a relative humidity of about 0%, 5%, 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, 95%, or about 99%. Deposition of sizing liquid on wood. Can be at least about 0%, 5%, 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, 95%, or at least about 99% or higher relative humidity The deposition of slurry on the substrate occurs in the atmosphere. It can be used when the relative humidity is not more than about 99%, 95%, 90%, 80%, 70%, 60%, 50%, 40%, 30%, 20%, 10% or not more than about 5% or less. The deposition of slurry on the substrate occurs in the atmosphere. The substrate sizing can occur in an atmosphere with an absolute moisture content of at least about 0.5 Torr, 1 Torr, 2 Torr, 5 Torr, 10 Torr, 20 Torr, 50 Torr, 100 Torr, 250 Torr, or at least about 500 Torr or more The deposition. The substrate can be produced in an atmosphere with an absolute moisture content of not more than about 760 Torr, 500 Torr, 250 Torr, 100 Torr, 50 Torr, 20 Torr, 10 Torr, 5 Torr, 2 Torr, 1 Torr, or 0.5 Torr or less Deposition of sizing liquid. In some embodiments, during the deposition of the metal-containing layer, the relative humidity is about 50%.
可在氧氣含量大於或等於約0.001托、0.01托、0.05托、0.1托、0.5托、1托、2托、5托、10托或大於約20托或更大之氛圍中發生基材上漿液之沉積。可在氧氣含量為不大於約20托、10托、5托、2托、1托、0.5托、0.1托、0.05托、0.01托、0.005托或0.001托或更小之氛圍中發生基材上漿液之沉積。可在周圍空氣條件下發生基材上漿液之乾燥。The substrate sizing can occur in an atmosphere where the oxygen content is greater than or equal to about 0.001 Torr, 0.01 Torr, 0.05 Torr, 0.1 Torr, 0.5 Torr, 1 Torr, 2 Torr, 5 Torr, 10 Torr, or greater than about 20 Torr or more The deposition. It can occur on the substrate in an atmosphere where the oxygen content is not more than about 20 Torr, 10 Torr, 5 Torr, 2 Torr, 1 Torr, 0.5 Torr, 0.1 Torr, 0.05 Torr, 0.01 Torr, 0.005 Torr, or 0.001 Torr or less The deposition of slurry. The drying of the slurry on the substrate can occur under ambient air conditions.
可在低氧氣含量(諸如不大於約0.5托、0.1托、0.05托、0.01托、0.005托或0.001托或更小)之氛圍中發生基材上漿液之退火。可在氧氣含量大於約0.001托、0.005托、0.01托、0.05托、0.1托或大於約0.5托或更大之氛圍中發生基材上漿液之退火。Annealing of the slurry on the substrate can occur in an atmosphere with a low oxygen content (such as not greater than about 0.5 Torr, 0.1 Torr, 0.05 Torr, 0.01 Torr, 0.005 Torr, or 0.001 Torr or less). The annealing of the sizing liquid on the substrate can occur in an atmosphere with an oxygen content greater than about 0.001 Torr, 0.005 Torr, 0.01 Torr, 0.05 Torr, 0.1 Torr, or greater than about 0.5 Torr or more.
可在氫氣含量大於約0.001托、0.005托、0.01托、0.05托或大於或約0.1托或更大之氛圍中發生含金屬層之乾燥。可在氫氣含量小於或約0.1托、0.05托、0.01托、0.005托或0.001托或更小之氛圍中發生基材上含金屬層之乾燥。可在純氫氣、純氬氣或氫氣及氬氣之混合物之氛圍中發生基材上含金屬層之退火。The drying of the metal-containing layer can occur in an atmosphere where the hydrogen content is greater than about 0.001 Torr, 0.005 Torr, 0.01 Torr, 0.05 Torr, or greater than or about 0.1 Torr or greater. The drying of the metal-containing layer on the substrate can occur in an atmosphere with a hydrogen content of less than or about 0.1 Torr, 0.05 Torr, 0.01 Torr, 0.005 Torr, or 0.001 Torr or less. The annealing of the metal-containing layer on the substrate can occur in an atmosphere of pure hydrogen, pure argon, or a mixture of hydrogen and argon.
在施覆漿液至基材之後,可藉由加熱、汽化、抽真空或其任何組合來去除含金屬層中之溶劑。驅除溶劑後,可將基材重新捲繞。在沉積之後且在退火之前,可將經漿液塗佈之基材在真空或大氣條件下培養或儲存。此發生在退火之前且可用於自塗層去除殘餘污染物,例如,自塗佈製程去除殘留的溶劑或黏結劑。培養期可為約10秒、20秒、30秒、40秒、50秒、1分鐘、2分鐘、3分鐘、4分鐘或5分鐘。培養期可為至少約10秒、20秒、30秒、40秒、50秒、1分鐘、2分鐘、3分鐘、4分鐘或5分鐘或更長時間。培養期可為不超過約5分鐘、4分鐘、3分鐘、2分鐘、1分鐘、50秒、40秒、30秒、20秒、或不超過約10秒或更短時間。培養期可係塗佈與退火之間的時間,且可係用於將經塗佈製品運輸至熱處理設施或設備之時間長度。例如,培養期可持續約10秒、約30秒、約1分鐘、約2分鐘、約3分鐘、約4分鐘或約5分鐘。培養溫度可為約50℃、75℃℃、100℃、125℃、150℃、175℃、200℃、225℃、250℃、275℃或約300℃。培養溫度可為至少約50℃、75℃、100℃、125℃、150℃℃、175℃、200℃、225℃、250℃、275℃或至少約300℃或更高。培養溫度可為不超過約300℃、275℃、250℃、225℃、200℃、175℃、150℃、125℃、100℃℃、75℃、或不超過約50℃或更低。培養溫度可在約50℃至約300℃之範圍內。例如,培養溫度可為大於約50℃、約75℃、約100℃、約125℃、約150℃、約175℃、約200℃、約225℃、約250℃、約275℃或約300℃或更高。在培養後且在退火之前,可將基材上之漿液之乾膜維持在真空條件下。塗層可在輥塗製程之後遵循乾燥步驟立刻變乾。在輥塗與退火之間的任何時間,吸收的水或其他污染物可與塗層一起存在。After applying the slurry to the substrate, the solvent in the metal-containing layer can be removed by heating, vaporizing, vacuuming, or any combination thereof. After the solvent is driven off, the substrate can be rewinded. After deposition and before annealing, the slurry-coated substrate can be cultured or stored under vacuum or atmospheric conditions. This occurs before annealing and can be used to remove residual contaminants from the coating, for example, to remove residual solvents or binders from the coating process. The incubation period can be about 10 seconds, 20 seconds, 30 seconds, 40 seconds, 50 seconds, 1 minute, 2 minutes, 3 minutes, 4 minutes, or 5 minutes. The incubation period can be at least about 10 seconds, 20 seconds, 30 seconds, 40 seconds, 50 seconds, 1 minute, 2 minutes, 3 minutes, 4 minutes, or 5 minutes or longer. The incubation period can be no more than about 5 minutes, 4 minutes, 3 minutes, 2 minutes, 1 minute, 50 seconds, 40 seconds, 30 seconds, 20 seconds, or no more than about 10 seconds or less. The incubation period can be the time between coating and annealing, and can be the length of time used to transport the coated product to a heat treatment facility or equipment. For example, the incubation period may last for about 10 seconds, about 30 seconds, about 1 minute, about 2 minutes, about 3 minutes, about 4 minutes, or about 5 minutes. The culture temperature can be about 50°C, 75°C, 100°C, 125°C, 150°C, 175°C, 200°C, 225°C, 250°C, 275°C, or about 300°C. The culture temperature may be at least about 50°C, 75°C, 100°C, 125°C, 150°C, 175°C, 200°C, 225°C, 250°C, 275°C, or at least about 300°C or higher. The culture temperature can be no more than about 300°C, 275°C, 250°C, 225°C, 200°C, 175°C, 150°C, 125°C, 100°C, 75°C, or no more than about 50°C or lower. The culture temperature can be in the range of about 50°C to about 300°C. For example, the culture temperature may be greater than about 50°C, about 75°C, about 100°C, about 125°C, about 150°C, about 175°C, about 200°C, about 225°C, about 250°C, about 275°C, or about 300°C Or higher. After incubation and before annealing, the dry film of the slurry on the substrate can be maintained under vacuum. The coating can be dried immediately following the drying step after the roll coating process. At any time between roll coating and annealing, absorbed water or other contaminants can be present with the coating.
空間上分隔之合金可使用合金化金屬沉積在金屬基材之表面上,該合金化金屬已利用金屬熱還原(或還原)反應從其金屬氧化物原位生成。當在還原金屬劑之存在下帶入熱力學上較不穩定之金屬氧化物時,可發生金屬熱還原反應,其形成熱力學上更穩定之金屬氧化物。還原金屬劑可包含任何元素物質,包括鐵、鉻、鎳、矽、釩、鈦、硼、鎢、鋁、鉬、鈷、錳、鋯、鈮及其組合。The spatially separated alloy can be deposited on the surface of the metal substrate using alloying metal, which has been generated in situ from its metal oxide by metal thermal reduction (or reduction) reaction. When a thermodynamically unstable metal oxide is introduced in the presence of a reducing metal agent, a metal thermal reduction reaction can occur, which forms a thermodynamically more stable metal oxide. The reducing metal agent may include any elemental substance, including iron, chromium, nickel, silicon, vanadium, titanium, boron, tungsten, aluminum, molybdenum, cobalt, manganese, zirconium, niobium, and combinations thereof.
在一些實施例中,金屬熱還原反應可藉由金屬轉移活化劑引發或增強。可選擇還原金屬化合物使得其對應之金屬氧化物之吉布斯自由形成能相對較大,例如,鋁至氧化鋁。此類還原金屬可用作有效之氧氣及水清除劑,從而消除會阻礙金屬氧化物與活化劑化合物之正向反應之氧化物質。總體金屬熱還原反應之一個實例可包括氧化鉻與鋁金屬之反應,諸如: 1) Cr2 O3 + 3H2 --> 2Cr + 3H2 O 2) 2Al + 3H2 O --> Al2 O3 + 3H2 其中上述反應可係用於在基材之表面上沉積金屬層中之鉻之來源。利用金屬氧化物作為用於沉積之來源材料可免除在反應中使用另外惰性粉末,該惰性粉末充當金屬層之支架且在燒結製程期間充當使金屬粉末合金化之隔離器。例如,藉由包括第二元素粉末,或使還原元素與增加還原元素之熔點至高於用於沉積之溫度之溫度的物質合金化,可降低所得金屬層之缺陷率。藉由後熱處理清潔製程,可更容易地去除來自還原金屬劑之反應的所得金屬氧化物。空間上分隔之合金可在淨形狀部件(諸如金屬管、棒、線或其他形式之內徑)上包括合金金屬層。In some embodiments, the metal thermal reduction reaction can be initiated or enhanced by a metal transfer activator. The metal compound can be reduced so that the Gibbs free formation energy of its corresponding metal oxide is relatively large, for example, aluminum to aluminum oxide. Such reduced metals can be used as effective oxygen and water scavengers to eliminate oxidizing substances that would hinder the positive reaction of metal oxides and activator compounds. An example of the overall metal thermal reduction reaction may include the reaction of chromium oxide and aluminum metal, such as: 1) Cr 2 O 3 + 3H 2 --> 2Cr + 3H 2 O 2) 2Al + 3H 2 O --> Al 2 O 3 + 3H 2 wherein the above reaction can be used to deposit the source of chromium in the metal layer on the surface of the substrate. The use of metal oxides as the source material for deposition can eliminate the need for additional inert powders in the reaction, which serve as a support for the metal layer and as a separator for alloying the metal powder during the sintering process. For example, by including the powder of the second element, or alloying the reducing element with a substance that increases the melting point of the reducing element to a temperature higher than the temperature used for deposition, the defect rate of the resulting metal layer can be reduced. The post-heat treatment cleaning process can more easily remove the resulting metal oxide from the reaction of the reducing metal agent. The spatially separated alloy may include an alloy metal layer on a net shape part (such as a metal tube, rod, wire, or other form of inner diameter).
基材之表面上的金屬層可包括施覆至基材之表面之漿液。漿液可包含金屬氧化物粉末、還原金屬劑、金屬鹵化物前驅物或溶劑。可對包含金屬氧化物粉末之漿液之化學及流變性質進行最佳化。增加之流變控制可提供更均勻之塗佈,包括減少非所欲流變效應,諸如肋紋、級聯或其他缺陷,及增加基材之表面上的表面覆蓋率,且可導致金屬之利用度提高。可至少基於組分之相對濃度、組分之顆粒尺寸、pH、離子強度、減少之沉降、漿液屈服強度、漿液黏度及可影響漿液作為用於在基材表面上沉積金屬層之來源之性能的任何其他性質來調整漿液組成。The metal layer on the surface of the substrate may include a slurry applied to the surface of the substrate. The slurry may contain metal oxide powder, reducing metal agent, metal halide precursor or solvent. The chemical and rheological properties of the slurry containing metal oxide powder can be optimized. Increased rheology control can provide more uniform coating, including reducing undesired rheological effects such as ribs, cascades or other defects, and increasing surface coverage on the substrate surface, and can lead to metal utilization度 Increase. It can be based at least on the relative concentration of the components, the particle size of the components, pH, ionic strength, reduced sedimentation, slurry yield strength, slurry viscosity, and can affect the performance of the slurry as a source for depositing a metal layer on the substrate surface Any other properties to adjust the slurry composition.
可基於金屬氧化物與還原金屬劑之間的金屬熱還原反應的大吉布斯自由形成能來選擇金屬氧化物與還原金屬劑對。在一些情況下,金屬氧化物及還原金屬劑可經歷自發金屬熱還原反應。金屬熱還原反應可具有至少約-50 kJ、-100 kJ、-150 kJ、-200 kJ、-250 kJ、-300 kJ、- 350 kJ、-400 kJ、-450 kJ、-500 kJ、-550 kJ、-600 kJ、-650 kJ、-700 kJ、- 750 kJ、-800 kJ、-850 kJ、-900 kJ、-950 kJ、-1000 kJ或大於約-1000 kJ之吉布斯自由形成能。金屬熱還原反應可具有不大於約-1000 kJ、-950 kJ、-900 kJ、-850 kJ、-800 kJ、- 750 kJ、-700 kJ、-650 kJ、-600 kJ、-550 kJ、-500 kJ、-450 kJ、-400 kJ、- 350 kJ、-300 kJ、-250 kJ、-200 kJ、-150 kJ、-100 kJ、-50 kJ或小於約-50 kJ之吉布斯自由形成能。The metal oxide and reducing metal agent pair can be selected based on the large Gibbs free formation energy of the metal thermal reduction reaction between the metal oxide and the reducing metal agent. In some cases, the metal oxide and the reducing metal agent may undergo a spontaneous metal thermal reduction reaction. The metal thermal reduction reaction may have at least about -50 kJ, -100 kJ, -150 kJ, -200 kJ, -250 kJ, -300 kJ, -350 kJ, -400 kJ, -450 kJ, -500 kJ, -550 kJ, -600 kJ, -650 kJ, -700 kJ, -750 kJ, -800 kJ, -850 kJ, -900 kJ, -950 kJ, -1000 kJ or greater than approximately -1000 kJ Gibbs free formation energy . The thermal reduction reaction of metals may have a temperature not greater than about -1000 kJ, -950 kJ, -900 kJ, -850 kJ, -800 kJ, -750 kJ, -700 kJ, -650 kJ, -600 kJ, -550 kJ,- 500 kJ, -450 kJ, -400 kJ, -350 kJ, -300 kJ, -250 kJ, -200 kJ, -150 kJ, -100 kJ, -50 kJ or less than about -50 kJ Gibbs free formation can.
經漿液塗佈之基材可在退火之前重新捲繞。在熱處理期間可將經漿液塗佈之基材置於乾餾爐(retort)中且處於受控氛圍。可去除水。可抽真空以迫使氫氣在包覆物之間。退火製程可藉由緊捲或鬆捲退火。使經漿液層塗佈之基材退火可允許漿液中之元素物質擴散進入至基材中或穿過基材。退火後,少於約100重量%、90重量%、80重量%、70重量%、60重量%、50重量%、40重量%、30重量%、20重量%、10重量%或5重量%或更少之元素物質可擴散至基材或擴散進入至基材中。退火後至少約5重量%、10重量%、20重量%、30重量%、40重量%、50重量%、60重量%、70重量%、80重量%或至少約90重量%或更多之元素物質可擴散至基材或擴散進入至基材中。某些製程條件可提供約1至5%之元素物質從塗層擴散進入至基材中。元素物質擴散至基材可藉由漿液層中之組分來輔助。退火製程可係連續退火製程。退火製程可係非連續退火製程。經漿液塗佈之基材可經歷超過一種退火製程以增加元素物質之利用度或改變鄰接基材之金屬層中元素物質之濃度梯度。The slurry-coated substrate can be rewinded before annealing. During the heat treatment, the slurry-coated substrate can be placed in a retort and in a controlled atmosphere. Can remove water. A vacuum can be drawn to force hydrogen between the claddings. The annealing process can be either tight coil or loose coil annealing. Annealing the substrate coated with the slurry layer can allow elemental substances in the slurry to diffuse into or through the substrate. After annealing, less than about 100% by weight, 90% by weight, 80% by weight, 70% by weight, 60% by weight, 50% by weight, 40% by weight, 30% by weight, 20% by weight, 10% by weight or 5% by weight or Less elemental substances can diffuse into or into the substrate. After annealing, at least about 5 wt%, 10 wt%, 20 wt%, 30 wt%, 40 wt%, 50 wt%, 60 wt%, 70 wt%, 80 wt% or at least about 90 wt% or more elements The substance can diffuse into or into the substrate. Certain process conditions can provide about 1 to 5% of the element material diffused from the coating into the substrate. The diffusion of elemental substances to the substrate can be assisted by the components in the slurry layer. The annealing process may be a continuous annealing process. The annealing process may be a discontinuous annealing process. The slurry-coated substrate can undergo more than one annealing process to increase the utilization of elemental substances or change the concentration gradient of elemental substances in the metal layer adjacent to the substrate.
基材可以大於約0.01℃/秒、0.1℃/秒、1℃/秒、5℃/秒、10℃/秒、15℃/秒、20℃/秒、25℃/秒或30℃/秒或更大之速率進行加熱。基材可以大於約0.01℃/分鐘、0.1℃/分鐘、1℃/分鐘、5℃/分鐘、10℃/分鐘、15℃/分鐘、20℃/分鐘、25℃/分鐘或30℃/分鐘或更大之速率進行加熱。基材可以小於約30℃/分鐘、25℃/分鐘、20℃/分鐘、15℃/分鐘、10℃/分鐘、5℃/分鐘、1℃/分鐘、0.1℃/分鐘或小於約0.01℃/分鐘或更小之速率進行加熱。基材可以小於約30℃/秒、25℃/秒、20℃/秒、15℃/秒、10℃/秒、5℃/秒、1℃/秒、0.1℃/秒、或小於約0.01℃/秒或更小之速率進行加熱。已塗佈有漿液之基材可在至少約0℃、25℃、50℃、75℃、100℃、200℃、300℃、400℃、500℃、600℃、700℃、800℃、900℃、1000℃、1100℃、1200℃或1300℃或更高之溫度下進行退火。退火溫度可為不超過約1300℃、1200℃、1100℃、1000℃、900℃、800℃、700℃、600℃、500℃、400℃、300℃、200℃、100℃、75℃、50℃、25℃或不超過約0℃或更低。退火溫度可為約800℃、900℃、1000℃、1100℃、1200℃或1300℃。退火期間的加熱溫度可為約800℃至約1300℃,諸如約900℃至約1000℃。退火溫度可為約900℃、925℃、950℃或1000℃。The substrate may be greater than about 0.01°C/sec, 0.1°C/sec, 1°C/sec, 5°C/sec, 10°C/sec, 15°C/sec, 20°C/sec, 25°C/sec or 30°C/sec or Heating at a greater rate. The substrate can be greater than about 0.01°C/minute, 0.1°C/minute, 1°C/minute, 5°C/minute, 10°C/minute, 15°C/minute, 20°C/minute, 25°C/minute or 30°C/minute or Heating at a greater rate. The substrate can be less than about 30°C/minute, 25°C/minute, 20°C/minute, 15°C/minute, 10°C/minute, 5°C/minute, 1°C/minute, 0.1°C/minute, or less than about 0.01°C/minute Heating at a rate of minutes or less. The substrate may be less than about 30°C/sec, 25°C/sec, 20°C/sec, 15°C/sec, 10°C/sec, 5°C/sec, 1°C/sec, 0.1°C/sec, or less than about 0.01°C /Sec or less for heating. The substrate coated with the slurry can be at least about 0℃, 25℃, 50℃, 75℃, 100℃, 200℃, 300℃, 400℃, 500℃, 600℃, 700℃, 800℃, 900℃ , 1000℃, 1100℃, 1200℃ or 1300℃ or higher temperature for annealing. The annealing temperature can be no more than about 1300℃, 1200℃, 1100℃, 1000℃, 900℃, 800℃, 700℃, 600℃, 500℃, 400℃, 300℃, 200℃, 100℃, 75℃, 50 °C, 25 °C or no more than about 0 °C or lower. The annealing temperature can be about 800°C, 900°C, 1000°C, 1100°C, 1200°C, or 1300°C. The heating temperature during annealing may be about 800°C to about 1300°C, such as about 900°C to about 1000°C. The annealing temperature may be about 900°C, 925°C, 950°C, or 1000°C.
在加熱期間,基材或含金屬層中之鐵可從鐵氧體轉變至奧氏體。轉變發生之溫度可稱為鐵氧體-奧氏體轉變溫度。基材或含金屬層之鐵氧體-奧氏體轉變溫度可為不超過約1600℃、1500℃、1400℃、1300℃、1200℃、1100℃、1000℃、900℃、800℃、700℃、600℃或不超過約500℃或更低。基材或含金屬層之鐵氧體-奧氏體轉變溫度可為高於約500℃、600℃、700℃、800℃、900℃、1000℃、1100℃、1200℃、1300℃、1400℃、1500℃或1600℃或更高。基材之鐵氧體-奧氏體轉變溫度可為約900℃、1000℃、1100℃、1200℃或1300℃。基材之鐵氧體-奧氏體轉變溫度可為約900℃至約1300℃、約1000℃至約1200℃、或約1100℃至約1200℃。During heating, the iron in the substrate or metal-containing layer can transform from ferrite to austenite. The temperature at which the transformation occurs can be referred to as the ferrite-austenite transformation temperature. The ferrite-austenite transition temperature of the substrate or the metal-containing layer can be no more than about 1600℃, 1500℃, 1400℃, 1300℃, 1200℃, 1100℃, 1000℃, 900℃, 800℃, 700℃ , 600°C or no more than about 500°C or lower. The ferrite-austenite transition temperature of the base material or the metal-containing layer can be higher than about 500℃, 600℃, 700℃, 800℃, 900℃, 1000℃, 1100℃, 1200℃, 1300℃, 1400℃ , 1500℃ or 1600℃ or higher. The ferrite-austenite transition temperature of the base material can be about 900°C, 1000°C, 1100°C, 1200°C, or 1300°C. The ferrite-austenite transition temperature of the substrate may be about 900°C to about 1300°C, about 1000°C to about 1200°C, or about 1100°C to about 1200°C.
總退火時間可為約5小時、10小時、20小時、40小時、60小時、80小時、100小時、120小時、140小時、160小時、180小時或約200小時。總退火時間可為至少約5小時、10小時、20小時、40小時、60小時、80小時、100小時、120小時、140小時、160小時、180小時或約200小時或更長時間。總退火時間可為短於約200小時、180小時、160小時、140小時、120小時、100小時、80小時、60小時、40小時、20小時、10小時或短於約5小時或更短時間。總退火時間(包括加熱)可在約5小時至約200小時之範圍內。例如,總退火時間可為超過約5小時、約20小時、約40小時、約60小時、約80小時、約100小時、約120小時、約140小時、約160小時、約180小時或約200小時或更長時間。退火製程期間之最高溫度可在約1小時至100小時內達成。例如,退火製程期間之最高溫度可在約1小時、10小時、20小時、30小時、40小時、50小時、60小時、70小時、80小時、90小時或100小時內達成。退火製程期間之最高溫度可在至少約1小時、10小時、20小時、30小時、40小時、50小時、60小時、70小時、80小時、90小時或至少約100小時或更長時間內達成。退火製程期間之最高溫度可在不超過約100小時、90小時、80小時、70小時、60小時、50小時、40小時、30小時、20小時、10小時或不超過約1小時或更短時間內達成。在一些情況下,基材可在約950℃之溫度下退火至少約5小時。在一些情況下,基材可在約950℃之溫度下退火至少約20小時。在一些情況下,基材可在約950℃之溫度下退火至少約40小時。在一些情況下,基材可在約900℃之溫度下退火至少約20小時。在一些情況下,基材可在約900℃之溫度下退火至少約40小時。在一些情況下,基材可在約900℃之溫度下退火至少約60小時。在一些情況下,基材可在約900℃之溫度下退火至少約80小時。The total annealing time may be about 5 hours, 10 hours, 20 hours, 40 hours, 60 hours, 80 hours, 100 hours, 120 hours, 140 hours, 160 hours, 180 hours, or about 200 hours. The total annealing time may be at least about 5 hours, 10 hours, 20 hours, 40 hours, 60 hours, 80 hours, 100 hours, 120 hours, 140 hours, 160 hours, 180 hours, or about 200 hours or more. The total annealing time can be less than about 200 hours, 180 hours, 160 hours, 140 hours, 120 hours, 100 hours, 80 hours, 60 hours, 40 hours, 20 hours, 10 hours, or less than about 5 hours or less . The total annealing time (including heating) can range from about 5 hours to about 200 hours. For example, the total annealing time can be more than about 5 hours, about 20 hours, about 40 hours, about 60 hours, about 80 hours, about 100 hours, about 120 hours, about 140 hours, about 160 hours, about 180 hours, or about 200 hours. Hours or more. The maximum temperature during the annealing process can be reached within about 1 hour to 100 hours. For example, the maximum temperature during the annealing process can be reached within about 1 hour, 10 hours, 20 hours, 30 hours, 40 hours, 50 hours, 60 hours, 70 hours, 80 hours, 90 hours or 100 hours. The maximum temperature during the annealing process can be reached in at least about 1 hour, 10 hours, 20 hours, 30 hours, 40 hours, 50 hours, 60 hours, 70 hours, 80 hours, 90 hours, or at least about 100 hours or longer . The maximum temperature during the annealing process can be no more than about 100 hours, 90 hours, 80 hours, 70 hours, 60 hours, 50 hours, 40 hours, 30 hours, 20 hours, 10 hours, or no more than about 1 hour or less Reached within. In some cases, the substrate may be annealed at a temperature of about 950°C for at least about 5 hours. In some cases, the substrate may be annealed at a temperature of about 950°C for at least about 20 hours. In some cases, the substrate may be annealed at a temperature of about 950°C for at least about 40 hours. In some cases, the substrate may be annealed at a temperature of about 900°C for at least about 20 hours. In some cases, the substrate may be annealed at a temperature of about 900°C for at least about 40 hours. In some cases, the substrate may be annealed at a temperature of about 900°C for at least about 60 hours. In some cases, the substrate may be annealed at a temperature of about 900°C for at least about 80 hours.
退火氛圍可包含氣態物質,諸如惰性或反應性氣體,例如氫氣、氦氣、甲烷、乙烯、氮氣或氬氣。退火氛圍可包含氣體之混合物。退火氛圍可係真空。為防止在退火期間元素物質之損失,可添加鹽酸至退火氣體。在高溫下使反應器內的含金屬層中之組分之分壓最小化可維持低沉積速率,此係最小化或停止形成柯肯德爾(Kirkendall)孔所必需的。在含金屬層中添加過多酸性成分亦可導致塗佈設備或基材之腐蝕。The annealing atmosphere may contain gaseous substances, such as inert or reactive gases, such as hydrogen, helium, methane, ethylene, nitrogen, or argon. The annealing atmosphere may include a mixture of gases. The annealing atmosphere can be vacuum. To prevent the loss of elemental substances during annealing, hydrochloric acid can be added to the annealing gas. Minimizing the partial pressure of the components in the metal-containing layer in the reactor at high temperatures can maintain a low deposition rate, which is necessary to minimize or stop the formation of Kirkendall holes. Adding too much acidic components to the metal-containing layer can also cause corrosion of coating equipment or substrates.
退火之後,可乾燥經金屬層塗佈之基材。經金屬層塗佈之基材之乾燥可在真空或接近真空之氛圍中發生。經金屬層塗佈之基材之乾燥可在惰性氣體之氛圍中進行。惰性氣體之實例包括氫氣、氦氣、氬氣、氮氣或其任何組合。After annealing, the substrate coated with the metal layer can be dried. The drying of the substrate coated with the metal layer can occur in a vacuum or an atmosphere close to vacuum. The drying of the substrate coated with the metal layer can be carried out in an atmosphere of inert gas. Examples of inert gases include hydrogen, helium, argon, nitrogen, or any combination thereof.
退火之後,可冷卻基材一段時間。冷卻時間可在約1小時至約100小時之範圍內。例如,冷卻時間可為至少約1小時、2小時、3小時、4小時、5小時、6小時、7小時、8小時、9小時、10小時、15小時、20小時、25小時、30小時、35小時、40小時、50小時、60小時、70小時、80小時、90小時或至少約100小時或更長時間。冷卻時間可為短於約100小時、90小時、80小時、70小時、60小時、50小時、40小時、35小時、25小時、20小時、15小時、10小時、9小時、8小時、7小時、6小時、5小時、4小時、3小時、2小時或短於約1小時或更短。例如,冷卻時間可為約1小時至約100小時、約5小時至約50小時、或約10小時至約20小時。After annealing, the substrate can be cooled for a period of time. The cooling time can range from about 1 hour to about 100 hours. For example, the cooling time can be at least about 1 hour, 2 hours, 3 hours, 4 hours, 5 hours, 6 hours, 7 hours, 8 hours, 9 hours, 10 hours, 15 hours, 20 hours, 25 hours, 30 hours, 35 hours, 40 hours, 50 hours, 60 hours, 70 hours, 80 hours, 90 hours or at least about 100 hours or more. The cooling time can be shorter than about 100 hours, 90 hours, 80 hours, 70 hours, 60 hours, 50 hours, 40 hours, 35 hours, 25 hours, 20 hours, 15 hours, 10 hours, 9 hours, 8 hours, 7 Hours, 6 hours, 5 hours, 4 hours, 3 hours, 2 hours or less than about 1 hour or less. For example, the cooling time may be about 1 hour to about 100 hours, about 5 hours to about 50 hours, or about 10 hours to about 20 hours.
大型製品在熱處理期間可具有熱點或冷點,其中製品可經均勻地塗佈但經不均勻地加熱。可指示熱點或冷點以控制合金化元素儘可能均勻地擴散至製品中。Large-scale products can have hot or cold spots during heat treatment, where the product can be uniformly coated but unevenly heated. Hot or cold spots can be indicated to control the diffusion of alloying elements into the product as uniformly as possible.
退火之後,可在基材上形成金屬層。該金屬層可具有選自碳、錳、矽、釩、鈦、鈮、磷、硫、鋁、銅、鎳、鉻、鉬、錫、硼、鈣、砷、鈷、鉛、銻、鉭、鎢、鋅、矽及鋯之至少一種元素物質,其中外層中該元素物質具有變化小於約20重量%、約15重量%、約10重量%、約5重量%、約4重量%、約3重量%、約2重量%、約1重量%或約0.5重量%或更小之濃度。該金屬層可具有選自碳、錳、矽、釩、鈦、鈮、磷、硫、鋁、銅、鎳、鉻、鉬、錫、硼、鈣、砷、鈷、鉛、銻、鉭、鎢、鋅、矽及鋯之至少一種元素物質,其中外層中該元素物質具有變化至少約0.5重量%、1重量%、2重量%、3重量%、4重量%、5重量%、10重量%、15重量%或至少約20重量%之濃度。基材可包括鄰接金屬層之黏結層。黏結層中元素物質之濃度可降低小於約1.0重量%。金屬或合金層之外觀可係均勻的。金屬或合金層在該層之至少一部分之表面上之外觀、重量及厚度可係平坦、不變、光滑、平整且均勻的。金屬或合金層可具有可係可見的晶界沉澱。或者,用本文所述的組合物或藉由本文所述的方法形成之金屬或合金層可具有幾乎沒有或很少的晶界沉澱,其在約10x、50x、100x、250x、500x、1000x或更高放大倍數下係可見的。After annealing, a metal layer can be formed on the substrate. The metal layer can be selected from carbon, manganese, silicon, vanadium, titanium, niobium, phosphorus, sulfur, aluminum, copper, nickel, chromium, molybdenum, tin, boron, calcium, arsenic, cobalt, lead, antimony, tantalum, tungsten At least one element material of zinc, silicon and zirconium, wherein the element material in the outer layer has a change of less than about 20% by weight, about 15% by weight, about 10% by weight, about 5% by weight, about 4% by weight, about 3% by weight , About 2% by weight, about 1% by weight, or about 0.5% by weight or less. The metal layer can be selected from carbon, manganese, silicon, vanadium, titanium, niobium, phosphorus, sulfur, aluminum, copper, nickel, chromium, molybdenum, tin, boron, calcium, arsenic, cobalt, lead, antimony, tantalum, tungsten , Zinc, silicon and zirconium at least one element material, wherein the element material in the outer layer has a change of at least about 0.5 wt%, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 10 wt%, A concentration of 15% by weight or at least about 20% by weight. The substrate may include an adhesive layer adjacent to the metal layer. The concentration of elemental substances in the bonding layer can be reduced by less than about 1.0% by weight. The appearance of the metal or alloy layer can be uniform. The appearance, weight and thickness of the metal or alloy layer on at least a part of the surface of the layer can be flat, constant, smooth, even and uniform. The metal or alloy layer may have visible grain boundary precipitation. Alternatively, a metal or alloy layer formed with the composition described herein or by the method described herein may have little or no grain boundary precipitation, which is about 10x, 50x, 100x, 250x, 500x, 1000x or Visible at higher magnifications.
含金屬層可包含金屬氧化物。金屬氧化物可包括但不限於Al2 O3 、MgO、CaO、Cr2 O3 、TiO2 、FeCr2 O4 、SiO2 、Ta2 O5 或MgCr2 O4 或其組合。可藉由元素金屬與熱力學上較不穩定的金屬氧化物之間的金屬熱還原反應在含金屬層中形成金屬氧化物。適宜之元素金屬及熱力學上較不穩定之金屬氧化物對可選自其吉布斯自由形成能因金屬氧化物氧化元素金屬而減少之對。The metal-containing layer may include a metal oxide. The metal oxide may include, but is not limited to, Al 2 O 3 , MgO, CaO, Cr 2 O 3 , TiO 2 , FeCr 2 O 4 , SiO 2 , Ta 2 O 5, or MgCr 2 O 4 or a combination thereof. The metal oxide can be formed in the metal-containing layer through the metal thermal reduction reaction between the elemental metal and the thermodynamically unstable metal oxide. Suitable elemental metal and thermodynamically unstable metal oxide pairs can be selected from the pairs whose Gibbs free formation energy is reduced by the oxidation of elemental metals by metal oxides.
在退火製程之後,殘餘物可殘留在基材上。金屬層中之某些組分可被消耗或去除(例如,沉積在乾餾爐之壁上),或其濃度由於其擴散至基材或擴散進入至基材中而降低。然而,在退火之後,呈例如粉末之形式之其他殘餘物可殘留在基材上。殘餘物可包含來自含金屬層之惰性材料。可在進一步處理(例如平整軋製)之前除去該殘餘物。可用HCl氣體吹洗反應以停止該反應。用HCl氣體吹洗可允許形成平坦輪廓。After the annealing process, the residue may remain on the substrate. Certain components in the metal layer can be consumed or removed (for example, deposited on the wall of a retort furnace), or their concentration is reduced due to their diffusion into the substrate or into the substrate. However, after annealing, other residues in the form of, for example, powder may remain on the substrate. The residue may contain inert materials from the metal-containing layer. This residue can be removed before further processing (e.g. temper rolling). The reaction can be stopped by purging the reaction with HCl gas. Purge with HCl gas allows a flat profile to be formed.
在鄰接基材形成金屬層之後,基材可具有可測量之晶粒尺寸。可根據美國國際材料試驗協會(ASTM)標準來測量及記錄晶粒尺寸。基材可具有約ASTM 000、00、0、1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、20、21、22、23、24、25、26、27、28、39或30之晶粒尺寸。基材可具有大於約ASTM 000、00、0、1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、20、21、22、23、24、25、26、27、28、39或30或更大之晶粒尺寸。基材可具有不大於約30、29、28、27、26、25、24、23、22、21、20、19、18、17、16、15、14、13、12、11、10、9、8、7、6、5、4、3、2、1、0、00或不大於約000或更小之晶粒尺寸。在一些情況下,金屬層可具有約ASTM 000至約ASTM 30、約ASTM 5至約ASTM 16、約ASTM 6至約ASTM 14或約ASTM 8至約ASTM 12之晶粒尺寸。基材可具有約ASTM 7至ASTM 9之晶粒尺寸。基材可具有約ASTM 7之晶粒尺寸。After the metal layer is formed adjacent to the substrate, the substrate may have a measurable grain size. The grain size can be measured and recorded according to ASTM standards. The substrate may have about
漿液中之元素物質可降低奧氏體至鐵氧體之轉變溫度。基材中之元素物質可降低奧氏體至鐵氧體之轉變溫度。元素物質可實質上不改變奧氏體至鐵氧體之轉變溫度。在一些情況下,元素物質可提高奧氏體至鐵氧體之轉變溫度。可降低奧氏體至鐵氧體之轉變溫度之元素物質可係錳、氮、銅或金。The element substances in the slurry can lower the transition temperature from austenite to ferrite. The element material in the base material can lower the transition temperature from austenite to ferrite. The element substance may not substantially change the transformation temperature from austenite to ferrite. In some cases, elemental substances can increase the austenite to ferrite transition temperature. The element substance that can lower the transition temperature from austenite to ferrite can be manganese, nitrogen, copper or gold.
可測量奧氏體之晶粒尺寸及鐵氧體之晶粒尺寸。奧氏體晶粒尺寸與鐵氧體晶粒尺寸之比可為大於約0.1、0.5、1、2、5或10或更大。奧氏體晶粒尺寸與鐵氧體晶粒尺寸之比可為小於約10、5、2、1、0.5或0.1或更小。奧氏體晶粒尺寸與鐵氧體晶粒尺寸之比可為約0.1、0.5、1、2、5或10。奧氏體晶粒尺寸與鐵氧體晶粒尺寸之比可為約1。奧氏體晶粒尺寸與鐵氧體晶粒尺寸之比可根據以下公式計算: Dγ /Dα =1+(0.0026+0.053重量% C+0.006重量% Mn+0.009重量% Nb+4.23重量% V*N-0.081重量% Ti)*(1.5+α1/2 )*Dγ 其中Dγ 係奧氏體晶粒尺寸,單位為μm,Dα 係鐵氧體晶粒尺寸,單位為μm,α係冷卻速率,單位為℃/s。It can measure the grain size of austenite and the grain size of ferrite. The ratio of austenite grain size to ferrite grain size may be greater than about 0.1, 0.5, 1, 2, 5, or 10 or more. The ratio of the austenite grain size to the ferrite grain size may be less than about 10, 5, 2, 1, 0.5, or 0.1 or less. The ratio of the austenite grain size to the ferrite grain size may be about 0.1, 0.5, 1, 2, 5, or 10. The ratio of the austenite grain size to the ferrite grain size may be about 1. The ratio of austenite grain size to ferrite grain size can be calculated according to the following formula: D γ /D α =1+(0.0026+0.053wt% C+0.006wt% Mn+0.009wt% Nb+4.23wt% V*N-0.081% by weight Ti)*(1.5+α 1/2 )*D γ where D γ system austenite grain size, unit is μm, D α system ferrite grain size, unit is μm, α is the cooling rate, the unit is °C/s.
鈦當量穩定化的量可根據以下公式計算: Ti當量穩定化=重量% Ti–3.42*重量% N–1.49重量% S–4重量% C+0.516重量% Nb。The stabilized amount of titanium equivalent can be calculated according to the following formula: Ti equivalent stabilization = weight% Ti-3.42 * weight% N-1.49 weight% S-4 weight% C + 0.516 weight% Nb.
在不希望受理論約束下,金屬層中一定量之鈦(Ti)當量穩定化可導致更耐受晶界沉澱之層。金屬層可包含至少約0.001 Ti當量、0.005 Ti當量、0.01 Ti當量、0.015 Ti當量、0.017 Ti當量、0.02 Ti當量、0.03 Ti當量、0.04 Ti當量、0.05 Ti當量、0.06 Ti當量、0.07 Ti當量、0.08 Ti當量、0.09 Ti當量或更大。金屬層可包含小於約0.09 Ti當量、0.08 Ti當量、0.07 Ti當量、0.06 Ti當量、0.05 Ti當量、0.04 Ti當量、0.03 Ti當量、0.02 Ti當量、0.017 Ti當量、0.015 Ti當量、0.01 Ti當量、0.005 Ti當量或小於約0.001 Ti當量或更小。Without wishing to be bound by theory, the stabilization of a certain amount of titanium (Ti) equivalent in the metal layer can result in a layer that is more resistant to grain boundary precipitation. The metal layer may include at least about 0.001 Ti equivalent, 0.005 Ti equivalent, 0.01 Ti equivalent, 0.015 Ti equivalent, 0.017 Ti equivalent, 0.02 Ti equivalent, 0.03 Ti equivalent, 0.04 Ti equivalent, 0.05 Ti equivalent, 0.06 Ti equivalent, 0.07 Ti equivalent, 0.08 Ti equivalent, 0.09 Ti equivalent or more. The metal layer may contain less than about 0.09 Ti equivalent, 0.08 Ti equivalent, 0.07 Ti equivalent, 0.06 Ti equivalent, 0.05 Ti equivalent, 0.04 Ti equivalent, 0.03 Ti equivalent, 0.02 Ti equivalent, 0.017 Ti equivalent, 0.015 Ti equivalent, 0.01 Ti equivalent, 0.005 Ti equivalent or less than about 0.001 Ti equivalent or less.
基材上之金屬層中之元素金屬的量可隨深度而變化。金屬層中元素金屬之量可以特定速率隨深度變化,諸如至少約-0.0001%/微米、至少約-0.001%/微米、至少約-0.01%/微米、至少約-0.05%/微米、至少約-0.1%/微米、至少約-0.5%/微米、至少約-1.0%/微米、至少約-3.0%/微米、至少約-5.0%/微米、至少約-7.0%/微米或至少約-9.0%/微米或更大。金屬層中金屬之量可以特定速率隨深度變化,諸如小於約-9.0%/微米、-7.0%/微米、-5.0%/微米、-3.0%/微米、-1.0%/微米、-0.5%/微米、-0.1%/微米、-0.05%/微米、-0.01%/微米、-0.001%/微米或小於約-0.001%/微米或更小。金屬層中元素金屬之量可隨深度從約-0.01%/微米至-5.0%/微米、或從-0.01%/微米至-3.0%/微米變化。The amount of elemental metal in the metal layer on the substrate can vary with depth. The amount of elemental metal in the metal layer can vary with depth at a specific rate, such as at least about -0.0001%/micron, at least about -0.001%/micron, at least about -0.01%/micron, at least about -0.05%/micron, at least about- 0.1%/micron, at least about -0.5%/micron, at least about -1.0%/micron, at least about -3.0%/micron, at least about -5.0%/micron, at least about -7.0%/micron, or at least about -9.0% /Micron or larger. The amount of metal in the metal layer can vary with depth at a specific rate, such as less than about -9.0%/micron, -7.0%/micron, -5.0%/micron, -3.0%/micron, -1.0%/micron, -0.5%/ Micron, -0.1%/micron, -0.05%/micron, -0.01%/micron, -0.001%/micron, or less than about -0.001%/micron or less. The amount of elemental metal in the metal layer can vary with depth from about -0.01%/micron to -5.0%/micron, or from -0.01%/micron to -3.0%/micron.
金屬層中元素金屬之量可以特定速率隨深度變化,諸如至少約-0.0001%/微米、-0.001%/微米、-0.01%/微米、-0.05%/微米、-0.1%/微米、-0.5%/微米、-1.0%/微米、-3.0%/微米、-5.0%/微米、-7.0%/微米或至少約-9.0%/微米或更大。金屬層中元素金屬之量可以特定速率隨深度變化,諸如不大於約-9.0%/微米、-7.0%/微米、-5.0%/微米、-3.0%/微米、-1.0%/微米、-0.5%/微米、-0.1%/微米、-0.05%/微米、-0.01%/微米、-0.001%/微米或不大於約-0.0001%/微米或更小。The amount of elemental metal in the metal layer can vary with depth at a specific rate, such as at least about -0.0001%/micron, -0.001%/micron, -0.01%/micron, -0.05%/micron, -0.1%/micron, -0.5% /Micron, -1.0%/micron, -3.0%/micron, -5.0%/micron, -7.0%/micron, or at least about -9.0%/micron or more. The amount of elemental metal in the metal layer can vary with depth at a specific rate, such as not greater than about -9.0%/micron, -7.0%/micron, -5.0%/micron, -3.0%/micron, -1.0%/micron, -0.5 %/Micron, -0.1%/micron, -0.05%/micron, -0.01%/micron, -0.001%/micron, or not more than about -0.0001%/micron or less.
元素金屬在距基材之表面小於或等於100微米之深度可具有至少約5重量%之濃度,在距基材之表面小於或等於50微米之深度可具有約5重量%之濃度,在距基材之表面小於或等於50微米之深度可具有約10重量%之濃度、在距基材之表面小於或等於40微米之深度可具有約10重量%之濃度、在距基材之表面小於或等於30微米之深度可具有約10重量%之濃度、在距基材之表面小於或等於50微米之深度可具有約15重量%之濃度、在距基材之表面小於或等於40微米之深度可具有約15重量%之濃度、在距基材之表面小於或等於30微米之深度可具有約15重量%之濃度、或在距基材之表面小於或等於10微米之深度可具有約15重量%之濃度。X射線光電子光譜可用於測量在量、濃度或重量%方面隨深度之此種變化。The element metal can have a concentration of at least about 5 wt% at a depth less than or equal to 100 microns from the surface of the substrate, and a concentration of about 5 wt% at a depth less than or equal to 50 microns from the surface of the substrate. The surface of the material can have a concentration of about 10% by weight at a depth less than or equal to 50 microns, and a concentration of about 10% by weight at a depth less than or equal to 40 microns from the surface of the substrate. A depth of 30 microns can have a concentration of about 10% by weight, a depth of less than or equal to 50 microns from the surface of the substrate can have a concentration of about 15% by weight, and a depth of less than or equal to 40 microns from the surface of the substrate can have a concentration of about 15% by weight. A concentration of about 15% by weight, a concentration of about 15% by weight at a depth less than or equal to 30 microns from the surface of the substrate, or a concentration of about 15% by weight at a depth less than or equal to 10 microns from the surface of the substrate concentration. X-ray photoelectron spectroscopy can be used to measure this change in amount, concentration or weight% with depth.
鄰接基材塗佈之金屬層可具有小於約1毫米、約900微米、約800微米、約700微米、約600微米、約500微米、約400微米、約300微米、約200微米或約100微米或更小之厚度。The metal layer coated adjacent to the substrate may have a size of less than about 1 mm, about 900 microns, about 800 microns, about 700 microns, about 600 microns, about 500 microns, about 400 microns, about 300 microns, about 200 microns, or about 100 microns. Or smaller thickness.
鄰接基材塗佈之金屬層可具有至少約1微米、5微米、10微米、20微米、30微米、40微米、50微米、60微米、70微米、80微米、90微米、100微米、200微米、300微米、400微米、500微米、600微米、700微米、800微米、900微米或更大之厚度。The metal layer coated adjacent to the substrate can have at least about 1 micron, 5 microns, 10 microns, 20 microns, 30 microns, 40 microns, 50 microns, 60 microns, 70 microns, 80 microns, 90 microns, 100 microns, 200 microns , 300 microns, 400 microns, 500 microns, 600 microns, 700 microns, 800 microns, 900 microns or greater thickness.
在以金屬層塗佈之前或在以金屬層塗佈之後,基材之性質可藉由各種技術及儀器來測定。技術及儀器包括(例如)晶粒尺寸計算、掃描電子顯微鏡(SEM)、掃描電子顯微鏡/能量分散光譜(SEM/EDS)、微探針分析及恆電位儀測量。Before coating with the metal layer or after coating with the metal layer, the properties of the substrate can be measured by various techniques and instruments. Technologies and instruments include, for example, grain size calculation, scanning electron microscope (SEM), scanning electron microscope/energy dispersive spectroscopy (SEM/EDS), microprobe analysis, and potentiostat measurement.
可測量在以金屬層塗佈之後的基材之性質。基材之性質包括(例如)化學組成、屈服強度、極限抗拉強度及伸長率百分比。The properties of the substrate after coating with the metal layer can be measured. The properties of the substrate include, for example, chemical composition, yield strength, ultimate tensile strength, and percent elongation.
在退火之後,基材可實質上不含柯肯德爾孔隙。該層可在基材上賦予該基材先前所不包含之特性。例如,該層可使基材更硬、更耐磨、更美觀、更具電阻、更小電阻、更導熱、更不導熱、或其任何組合。此外,該層可導致基材中之聲速更快或更慢。After annealing, the substrate may be substantially free of Kirkendall porosity. This layer can impart characteristics on the substrate that the substrate did not previously contain. For example, the layer can make the substrate harder, more wear-resistant, more beautiful, more resistive, less resistive, more conductive, less conductive, or any combination thereof. In addition, this layer can cause the speed of sound in the substrate to be faster or slower.
基材之屈服強度可為大於約100 psi、1 ksi(千磅/平方英寸)、2 ksi、5 ksi、10 ksi、15 ksi、20 ksi、21 ksi、22 ksi、23 ksi、24 ksi、25 ksi、26 ksi、27 ksi、28 ksi、29 ksi、30 ksi、31 ksi、32 ksi、33 ksi、34 ksi、35 ksi、36 ksi、37 ksi、38 ksi、39 ksi或大於約40 ksi或更大。基材之屈服強度可為小於或等於約40 ksi、39 ksi、38 kis、37 ksi、36 ksi、35 ksi、34 ksi、33 ksi、32 ksi、31 ksi、30 ksi、29 ksi、28 kis、27 ksi、26 ksi、25 ksi、24 ksi、23 ksi、22 ksi、21 ksi、20 ksi、15 ksi、10 kis、5 ksi、2 ksi、1 ksi或小於或等於約100 psi或更小。基材之屈服強度可為約20 ksi、21 ksi、22 ksi、23 ksi、24 ksi、25 ksi、26 ksi、27 ksi、28 ksi、29 ksi、30 ksi、31 ksi、32 ksi、33 ksi、34 ksi、35 ksi、36 ksi、37 ksi、38 ksi、39 ksi、40 ksi、45 ksi或約50 ksi。The yield strength of the substrate can be greater than about 100 psi, 1 ksi (thousand pounds per square inch), 2 ksi, 5 ksi, 10 ksi, 15 ksi, 20 ksi, 21 ksi, 22 ksi, 23 ksi, 24 ksi, 25 ksi, 26 ksi, 27 ksi, 28 ksi, 29 ksi, 30 ksi, 31 ksi, 32 ksi, 33 ksi, 34 ksi, 35 ksi, 36 ksi, 37 ksi, 38 ksi, 39 ksi or greater than about 40 ksi or more Big. The yield strength of the substrate can be less than or equal to about 40 ksi, 39 ksi, 38 kis, 37 ksi, 36 ksi, 35 ksi, 34 ksi, 33 ksi, 32 ksi, 31 ksi, 30 ksi, 29 ksi, 28 kis, 27 ksi, 26 ksi, 25 ksi, 24 ksi, 23 ksi, 22 ksi, 21 ksi, 20 ksi, 15 ksi, 10 kis, 5 ksi, 2 ksi, 1 ksi or less than or equal to about 100 psi or less. The yield strength of the substrate can be about 20 ksi, 21 ksi, 22 ksi, 23 ksi, 24 ksi, 25 ksi, 26 ksi, 27 ksi, 28 ksi, 29 ksi, 30 ksi, 31 ksi, 32 ksi, 33 ksi, 34 ksi, 35 ksi, 36 ksi, 37 ksi, 38 ksi, 39 ksi, 40 ksi, 45 ksi, or about 50 ksi.
基材之極限抗拉強度可為大於或等於約30 ksi、35 ksi、40 ksi、45 ksi、46 ksi、47 ksi、48 ksi、49 ksi、50 ksi、51 ksi、52 ksi、53 ksi、54 ksi、55 ksi、56 ksi、57 ksi、58 ksi、59 ksi、60 ksi、61 ksi、62 ksi、63 ksi、64 ksi、65 ksi、66 ksi、67 ksi、68 ksi、69 ksi、70 ksi、80 ksi、90 ksi、100 ksi或更大。基材之極限抗拉強度可為小於或等於約100 ksi、90 ksi、80 ksi、70 ksi、60 ksi、59 ksi、58 ksi、57 ksi、56 ksi、55 ksi、54 ksi、53 ksi、52 ksi、51 ksi、50 ksi、49 ksi、48 ksi、47 ksi、46 ksi、45 ksi、44 ksi、43 ksi、42 ksi、41 ksi、40 ksi、35 ksi或小於或等於約30 ksi。基材之極限抗拉強度可為約30 ksi、35 ksi、40 ksi、45 ksi、46 ksi、47 ksi、48 ksi、49 ksi、50 ksi、51 ksi、52 ksi、53 ksi、54 ksi、55 ksi、56 ksi、57 ksi、58 ksi、59 ksi、60 ksi、61 ksi、62 ksi、63 ksi、64 ksi、65 ksi、66 ksi、67 ksi、68 ksi、69 ksi、70 ksi、80 ksi、90 ksi、100 ksi或更大。The ultimate tensile strength of the substrate can be greater than or equal to about 30 ksi, 35 ksi, 40 ksi, 45 ksi, 46 ksi, 47 ksi, 48 ksi, 49 ksi, 50 ksi, 51 ksi, 52 ksi, 53 ksi, 54 ksi, 55 ksi, 56 ksi, 57 ksi, 58 ksi, 59 ksi, 60 ksi, 61 ksi, 62 ksi, 63 ksi, 64 ksi, 65 ksi, 66 ksi, 67 ksi, 68 ksi, 69 ksi, 70 ksi, 80 ksi, 90 ksi, 100 ksi or greater. The ultimate tensile strength of the substrate can be less than or equal to about 100 ksi, 90 ksi, 80 ksi, 70 ksi, 60 ksi, 59 ksi, 58 ksi, 57 ksi, 56 ksi, 55 ksi, 54 ksi, 53 ksi, 52 ksi, 51 ksi, 50 ksi, 49 ksi, 48 ksi, 47 ksi, 46 ksi, 45 ksi, 44 ksi, 43 ksi, 42 ksi, 41 ksi, 40 ksi, 35 ksi or less than or equal to about 30 ksi. The ultimate tensile strength of the substrate can be about 30 ksi, 35 ksi, 40 ksi, 45 ksi, 46 ksi, 47 ksi, 48 ksi, 49 ksi, 50 ksi, 51 ksi, 52 ksi, 53 ksi, 54 ksi, 55 ksi, 56 ksi, 57 ksi, 58 ksi, 59 ksi, 60 ksi, 61 ksi, 62 ksi, 63 ksi, 64 ksi, 65 ksi, 66 ksi, 67 ksi, 68 ksi, 69 ksi, 70 ksi, 80 ksi, 90 ksi, 100 ksi or greater.
基材可展現伸長率百分比,量規之最大伸長率除以原始量規長度或在塗佈鋼基材之前及之後斷裂前的距離差。伸長率百分比可為約5%、10%、20%、30%、40%、50%、60%、70%、80%、90%或100%。在一些情況下,伸長率百分比可為約20%、21%、22%、23%、24%、25%、26%、27%、28%、29%、30%、31%、32%、33%、34%、35%、36%、37%、38%、39%或40%。在一些情況下,伸長率百分比可為大於約5%、10%、 20%、21%、22%、23%、24%、25%、26%、27%、28%、29%、30%、31%、32%、33%、34%、35%、36%、37%、38%、39%、40%、50%、60%,70%、80%、90%或大於約100%或更大。在一些情況下,伸長率百分比可為小於約100%、90%、80%、70%、60%、50%、40%、39%、38%、37%、36%、35%、34%、33%、32%、31%、30%、29%、28%、27%、26%、25%、24%、23%、22%、21%、20%、10%或小於約5%或更小。The substrate can exhibit a percentage of elongation, the maximum elongation of the gauge divided by the original gauge length or the difference in distance before and after coating the steel substrate before breaking. The percent elongation can be about 5%, 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, or 100%. In some cases, the percent elongation may be about 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39% or 40%. In some cases, the percent elongation may be greater than about 5%, 10%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30% , 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 50%, 60%, 70%, 80%, 90% or greater than about 100% Or bigger. In some cases, the percent elongation may be less than about 100%, 90%, 80%, 70%, 60%, 50%, 40%, 39%, 38%, 37%, 36%, 35%, 34% , 33%, 32%, 31%, 30%, 29%, 28%, 27%, 26%, 25%, 24%, 23%, 22%, 21%, 20%, 10% or less than about 5% Or smaller.
基材可展現Ti/Nb穩定性。在一些情況下,Ti/Nb穩定性可為大於或等於約0.001、0.002、0.003、0.004、0.005、0.006、0.007、0.008、0.009、0.010、0.011、0.012、0.013、0.014、0.015、0.016、0.017、0.018、0.019、0.020、0.021、0.022、0.023、0.024、0.025、0.026、0.027、0.028、0.029、0.030、0.040或更大。在一些情況下,Ti/Nb穩定性可為小於或等於約0.040、0.030、0.029、0.028、0.027、0.026、0.025、0.024、0.023、0.022、0.021、0.020、0.019、0.018、0.017、0.016、0.015、0.014、0.013、0.012、0.011、0.010、0.009、0.008、0.007、0.006、0.005、0.004、0.003、0.002、0.001或更小。在一些情況下,Ti/Nb穩定性可為約0.001、0.002、0.003、0.004、0.005、0.006、0.007、0.008、0.009、0.010、0.011、0.012、0.013、0.014、0.015、0.016、0.017、0.018、0.019、0.020、0.021、0.022、0.023、0.024、0.025、0.026、0.027、0.028、0.029、0.030、0.040或更大。The substrate can exhibit Ti/Nb stability. In some cases, Ti/Nb stability may be greater than or equal to about 0.001, 0.002, 0.003, 0.004, 0.005, 0.006, 0.007, 0.008, 0.009, 0.010, 0.011, 0.012, 0.013, 0.014, 0.015, 0.016, 0.017, 0.018, 0.019, 0.020, 0.021, 0.022, 0.023, 0.024, 0.025, 0.026, 0.027, 0.028, 0.029, 0.030, 0.040 or more. In some cases, Ti/Nb stability may be less than or equal to about 0.040, 0.030, 0.029, 0.028, 0.027, 0.026, 0.025, 0.024, 0.023, 0.022, 0.021, 0.020, 0.019, 0.018, 0.017, 0.016, 0.015, 0.014, 0.013, 0.012, 0.011, 0.010, 0.009, 0.008, 0.007, 0.006, 0.005, 0.004, 0.003, 0.002, 0.001 or less. In some cases, Ti/Nb stability may be about 0.001, 0.002, 0.003, 0.004, 0.005, 0.006, 0.007, 0.008, 0.009, 0.010, 0.011, 0.012, 0.013, 0.014, 0.015, 0.016, 0.017, 0.018, 0.019 , 0.020, 0.021, 0.022, 0.023, 0.024, 0.025, 0.026, 0.027, 0.028, 0.029, 0.030, 0.040 or greater.
可使用任何適宜之分析技術來測量基材、漿液、漿液組分或金屬層之組成。測量可包括量、濃度或重量百分比、厚度或其他尺寸、組成及/或結構隨深度之變化、及晶粒尺寸。示例性分析技術可包括但不限於輝光放電質譜法、微探針分析、恆電位儀測量、掃描電子顯微鏡、透射電子顯微鏡、X射線光電子光譜、能量分散X射線光譜及電子能量損失光譜以測量量、濃度或重量%隨深度之變化。Any suitable analytical technique can be used to measure the composition of the substrate, slurry, slurry component, or metal layer. Measurements can include amount, concentration or weight percentage, thickness or other dimensions, composition and/or structure changes with depth, and grain size. Exemplary analysis techniques can include, but are not limited to, glow discharge mass spectrometry, microprobe analysis, potentiostat measurement, scanning electron microscope, transmission electron microscope, X-ray photoelectron spectroscopy, energy dispersive X-ray spectroscopy, and electron energy loss spectroscopy to measure the amount , Concentration or weight% changes with depth.
經金屬層塗佈之基材之其他性質可如例如美國專利公開案第2013/0171471號;美國專利公開案第2013/0309410號;美國專利公開案第2013/0252022號;美國專利公開案第2015/0167131號;美國專利公開案第2015/0345041號、美國專利公開案第2015/0345041號、美國專利公開案第2016/0230284號中所述,該等案各以全文引用之方式併入本文中。Other properties of the substrate coated with the metal layer can be, for example, U.S. Patent Publication No. 2013/0171471; U.S. Patent Publication No. 2013/0309410; U.S. Patent Publication No. 2013/0252022; U.S. Patent Publication No. 2015 /0167131; U.S. Patent Publication No. 2015/0345041, U.S. Patent Publication No. 2015/0345041, U.S. Patent Publication No. 2016/0230284, each of which is incorporated herein by reference in its entirety .
牽引、拉伸或兼而有之時,可改變鋼化學以增強材料之成形性質及性能。可藉由塑性應變比(通常稱為蘭克福德(Lankford)係數、r-bar、rm 、或本文中稱為r值)來測量鋼之可形成性。r值可經定義為片材之平面中之塑性應變與量規或片材厚度之塑性應變之比。r值可經計算為: 其中R0 、R45 及R90 係相對於片材之方向之塑性應變比。When pulling, stretching or both, the steel chemistry can be changed to enhance the forming properties and performance of the material. The formability of steel can be measured by the plastic strain ratio (commonly referred to as the Lankford coefficient, r-bar, r m , or r value herein). The r value can be defined as the ratio of the plastic strain in the plane of the sheet to the plastic strain of the gauge or sheet thickness. The r value can be calculated as: Among them, R 0 , R 45 and R 90 are the plastic strain ratios relative to the direction of the sheet.
可藉由操縱鋼化學及組成來改變鋼之r值以形成高度可形成鋼組合物。常見無間隙鋼可具有在約1.4至1.8之間的r值。改變的鋼可具有超過約2之r值。在一些實施例中,鋼可具有超過約2.2、2.4、2.6、2.8、3.0、3.2、3.4、3.6、3.8或超過約4.0或更大之r值。改變的鋼可具有不大於約4.0、3.8、3.6、3.4、3.2、3.0、2.8、2.6、2.4或不大於約2.2或更小之r值。The r value of steel can be changed by manipulating steel chemistry and composition to form highly formable steel composition. Common gapless steels can have an r value between about 1.4 and 1.8. The modified steel may have an r value in excess of about 2. In some embodiments, the steel may have an r value of more than about 2.2, 2.4, 2.6, 2.8, 3.0, 3.2, 3.4, 3.6, 3.8, or more than about 4.0 or more. The modified steel may have an r value not greater than about 4.0, 3.8, 3.6, 3.4, 3.2, 3.0, 2.8, 2.6, 2.4, or not greater than about 2.2 or less.
可採用幾種化學來提高高度可形成鋼組合物之r值。可選擇鋼化學以在退火鋼之前增加晶粒釘扎顆粒之總體併入。在一些實施例中,晶粒釘扎顆粒之存在抑制在退火製程期間形成增加之晶粒尺寸。可使用化學計量過量之鈦(Ti)。Ti之此種過量可允許在升高的溫度下形成TiC。TiC可在高溫下用來晶粒釘扎。無間隙鋼亦可使用更多錳及較少量之TiN、AlN、NbC、NbN或其他組分,其等在高溫下既可用作晶粒釘扎亦可用作間隙元素黏結劑。無間隙鋼可包含類似於實例7中所列的其等組成相似的組成。Several chemistries can be used to increase the r value of highly formable steel compositions. The steel chemistry can be selected to increase the overall incorporation of grain pinning particles before annealing the steel. In some embodiments, the presence of grain pinning particles inhibits the formation of increased grain size during the annealing process. A stoichiometric excess of titanium (Ti) can be used. This excess of Ti may allow TiC to form at elevated temperatures. TiC can be used for grain pinning at high temperatures. Non-interstitial steel can also use more manganese and a smaller amount of TiN, AlN, NbC, NbN or other components, which can be used as grain pinning at high temperatures and as interstitial element binders. The gapless steel may include a composition similar to that listed in Example 7.
用於形成高度可形成鋼組合物之方法可包括幾種中間製程。可根據上述化學構成鋼。無間隙鋼可經歷細晶粒實務以生成小的事先晶粒。可利用冷還原以獲得光滑修整及控制晶粒尺寸。在冷還原之後,隨後的處理步驟可包括高溫退火方法。高溫退火可包括在高於約900℃之溫度下進行退火。退火溫度可超過約950℃、1000℃、1050℃、1100℃、1150℃、1200℃、1250℃、1300℃、1350℃、1400℃、1500℃或更高。退火溫度可為不超過約1500℃、1450℃、1400℃、1350℃、1300℃、1250℃、1200℃、1150℃、1100℃、1050℃、1000℃或不超過約950℃或更低。退火溫度可允許鋼從鐵氧體相轉變至奧氏體相。所選擇的無間隙鋼之組成可防止晶粒生長。穩定化等級可防止應變熟化及可改良鋼之可形成性以進行進一步處理。The method used to form the highly formable steel composition may include several intermediate processes. Steel can be constructed according to the above chemistry. Interstitial steel can undergo fine-grain practice to generate small prior grains. Cold reduction can be used to obtain smooth trim and control grain size. After cold reduction, subsequent processing steps may include high temperature annealing methods. High temperature annealing may include annealing at a temperature higher than about 900°C. The annealing temperature may exceed about 950°C, 1000°C, 1050°C, 1100°C, 1150°C, 1200°C, 1250°C, 1300°C, 1350°C, 1400°C, 1500°C or higher. The annealing temperature can be no more than about 1500°C, 1450°C, 1400°C, 1350°C, 1300°C, 1250°C, 1200°C, 1150°C, 1100°C, 1050°C, 1000°C, or no more than about 950°C or lower. The annealing temperature may allow the steel to transform from the ferrite phase to the austenite phase. The composition of the selected gapless steel can prevent grain growth. The stabilization grade can prevent strain curing and can improve the formability of steel for further processing.
高度可形成鋼組合物可具有可測量之晶粒尺寸。可根據美國國際材料試驗協會(ASTM)標準來測量及記錄晶粒尺寸。基材可具有大於約ASTM 000、00、0、1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、20、21、22、23、24、25、26、27、28、39或30或更大之晶粒尺寸。高度可形成鋼組合物可具有大於約ASTM 000、00、0、1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、20、21、22、23、24、25、26、27、28、39或30或更大之晶粒尺寸。高度可形成鋼組合物可具有不大於約30、29、28、27、26、25、24、23、22、21、20、19、18、17、16、15、14、13、12、11、10、9、8、7、6、5、4、3、2、1、0、00或不大於約000或更小之晶粒尺寸。在一些實施例中,金屬層可具有約ASTM 000至約ASTM 10、約ASTM 000至約ASTM 15、約ASTM 000至約ASTM 20、約ASTM 000至約ASTM 25、約ASTM 000至約ASTM 30、約ASTM 5至約ASTM 16、約ASTM 5至約ASTM 18、ASTM 5至約ASTM 20、約ASTM 5至約ASTM 22、約ASTM 5至約ASTM 24、約ASTM 5至約ASTM 26、約ASTM 5至約ASTM 28、約ASTM 5至約ASTM 30、約ASTM 6至約ASTM 16、約ASTM 6至約ASTM 18、約ASTM 6至約ASTM 20、約ASTM 6至約ASTM 22、約ASTM 6至約ASTM 24、約ASTM 6至約ASTM 26、約ASTM 6至約ASTM 28、約ASTM 6至約ASTM 30、約ASTM 7至約ASTM 16、約ASTM 7至約ASTM 18、約ASTM 7至約ASTM 20、約ASTM 7至約ASTM 22、ASTM 7至約ASTM 24、約ASTM 7至約ASTM 26、約ASTM 7至約ASTM 28、約ASTM 7至約ASTM 30、約ASTM 8至約ASTM 16、約ASTM 8至約ASTM 18、約ASTM 8至約ASTM 20、約ASTM 8至約ASTM 22、約ASTM 8至約ASTM 24、約ASTM 8至約ASTM 26、約ASTM 8至約ASTM 28、約ASTM 8至約ASTM 30、約ASTM 9至約ASTM 16、約ASTM 9至約ASTM 18、約ASTM 9至約ASTM 20、約ASTM 9至約ASTM 22、約ASTM 9至約ASTM 24、約ASTM 9至約ASTM 26、約ASTM 9至約ASTM 28、約ASTM 9至約ASTM 30、約ASTM 10至約ASTM 16、約ASTM 10至約ASTM 18、約ASTM 10至約ASTM 20、約ASTM 10至約ASTM 22、約ASTM 10至約ASTM 24、約ASTM 10至約ASTM 26、約ASTM 10至約ASTM 28、約ASTM 10至約ASTM 30、約ASTM 15至約ASTM 20、約ASTM 15至約ASTM 25、約ASTM 15至約ASTM 30或ASTM 20至約ASTM 30之晶粒尺寸。高度可形成鋼組合物可具有約ASTM 7至ASTM 9、約ASTM 6至約ASTM 14或約ASTM 8至約ASTM 12之晶粒尺寸。高度可形成鋼組合物可具有約ASTM 7、約ASTM 8、約ASTM 9、約ASTM 10、約ASTM 11、約ASTM 12、約ASTM 13、約ASTM 14、約ASTM 15、約ASTM 16、約ASTM 17、約ASTM 18、約ASTM 19、約ASTM 20、約ASTM 21、約ASTM 22、約ASTM 23、約ASTM 24、約ASTM 25、約ASTM 26、約ASTM 27、約ASTM 28、約ASTM 29或約ASTM 30之晶粒尺寸。The highly formable steel composition can have a measurable grain size. The grain size can be measured and recorded according to ASTM standards. The substrate may have greater than about ASTM 000, 00, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19 , 20, 21, 22, 23, 24, 25, 26, 27, 28, 39 or 30 or larger grain size. The highly formable steel composition can have greater than about ASTM 000, 00, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17 , 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 39 or 30 or larger grain size. The height formable steel composition may have no more than about 30, 29, 28, 27, 26, 25, 24, 23, 22, 21, 20, 19, 18, 17, 16, 15, 14, 13, 12, 11 , 10, 9, 8, 7, 6, 5, 4, 3, 2, 1, 0, 00 or a grain size not greater than about 000 or less. In some embodiments, the metal layer may have from about ASTM 000 to about ASTM 10, from about ASTM 000 to about ASTM 15, from about ASTM 000 to about ASTM 20, from about ASTM 000 to about ASTM 25, from about ASTM 000 to about ASTM 30, About ASTM 5 to about ASTM 16, about ASTM 5 to about ASTM 18, ASTM 5 to about ASTM 20, about ASTM 5 to about ASTM 22, about ASTM 5 to about ASTM 24, about ASTM 5 to about ASTM 26, about ASTM 5 To about ASTM 28, about ASTM 5 to about ASTM 30, about ASTM 6 to about ASTM 16, about ASTM 6 to about ASTM 18, about ASTM 6 to about ASTM 20, about ASTM 6 to about ASTM 22, about ASTM 6 to about ASTM 24, about ASTM 6 to about ASTM 26, about ASTM 6 to about ASTM 28, about ASTM 6 to about ASTM 30, about ASTM 7 to about ASTM 16, about ASTM 7 to about ASTM 18, about ASTM 7 to about ASTM 20 , About ASTM 7 to about ASTM 22, ASTM 7 to about ASTM 24, about ASTM 7 to about ASTM 26, about ASTM 7 to about ASTM 28, about ASTM 7 to about ASTM 30, about ASTM 8 to about ASTM 16, about ASTM 8 to about ASTM 18, about ASTM 8 to about ASTM 20, about ASTM 8 to about ASTM 22, about ASTM 8 to about ASTM 24, about ASTM 8 to about ASTM 26, about ASTM 8 to about ASTM 28, about ASTM 8 to About ASTM 30, about ASTM 9 to about ASTM 16, about ASTM 9 to about ASTM 18, about ASTM 9 to about ASTM 20, about ASTM 9 to about ASTM 22, about ASTM 9 to about ASTM 24, about ASTM 9 to about ASTM 26, about ASTM 9 to about ASTM 28, about ASTM 9 to about ASTM 30, about ASTM 10 to about ASTM 16, about ASTM 10 to about ASTM 18, about ASTM 10 to about ASTM 20, about ASTM 10 to about ASTM 22, About ASTM 10 to about ASTM 24, about ASTM 10 to about ASTM 26, about ASTM 10 to about ASTM 28, about ASTM 10 to about ASTM 30, about ASTM 15 to about ASTM 20, about ASTM 15 to about ASTM 25, about ASTM 15 to about ASTM 30 or ASTM 20 to about ASTM 3 0 grain size. The highly formable steel composition may have a grain size of about ASTM 7 to ASTM 9, about ASTM 6 to about ASTM 14, or about ASTM 8 to about ASTM 12. The highly formable steel composition may have about ASTM 7, about ASTM 8, about ASTM 9, about ASTM 10, about ASTM 11, about ASTM 12, about ASTM 13, about ASTM 14, about
本文所述的基材、金屬層及包含金屬層之組合物可用於任何處理方法或一系列處理方法中。在沉積含金屬層之前、期間及/或之後,基材、金屬層及組合物可用於另外處理方法中。在退火金屬層之前、期間及/或之後,基材、金屬層及組合物可用於另外處理方法中。包含金屬層之組合物可為隨後的處理步驟提供增強之性質(例如,可形成性、可加工性、改良之導熱性)。在形成金屬層之後具有增強之性質之組合物可有利用於多種應用,諸如電合金、電子合金、高溫合金、高強度合金、耐腐蝕合金、建築合金、結構合金、消費類貨物合金、器具級合金、工業合金、生物醫療級合金、軍事級合金、海事級合金、航空級合金、運輸級合金、美學合金及汽車級合金。The substrate, metal layer, and composition containing the metal layer described herein can be used in any treatment method or series of treatment methods. Before, during, and/or after depositing the metal-containing layer, the substrate, metal layer, and composition can be used in additional processing methods. Before, during, and/or after annealing the metal layer, the substrate, metal layer, and composition can be used in additional processing methods. The composition comprising the metal layer can provide enhanced properties (eg, formability, processability, improved thermal conductivity) for subsequent processing steps. The composition with enhanced properties after forming the metal layer can be advantageously used in a variety of applications, such as electrical alloys, electronic alloys, high-temperature alloys, high-strength alloys, corrosion-resistant alloys, construction alloys, structural alloys, consumer goods alloys, appliance grades Alloys, industrial alloys, biomedical grade alloys, military grade alloys, maritime grade alloys, aviation grade alloys, transportation grade alloys, aesthetic alloys and automotive grade alloys.
基材、金屬層或包含金屬層之組合物可在沉積金屬層之前、期間及/或之後經歷任何處理方法。示例性製程可包括但不限於成形、軟或硬工具處理、緊固及接縫或切口邊緣保護。示例性成形、軟或硬工具處理製程可包括拉伸或牽引成形、再模壓、碰撞成形、旋壓成形、輥壓成形、液壓成形、CNC成形、翻邊、捲曲(crimping)、捲邊(hemming)、熱沖壓、擠出及鍛造。示例性緊固製程可包括肘節鎖定、弓形鎖定、點焊、焊接、棒焊、電弧焊接、MIG焊接、TIG焊接、乙炔氣焊接、電阻焊接、超音波焊接、摩擦焊接、雷射焊接、等離子焊接、鎖縫、鉚接、熱鍛造及化學黏附(例如,膠或環氧樹脂接合)。示例性接縫或切口邊緣保護製程可包括熱浸鍍鋅、電鍍鋅、鋁或鍍鋁、鋁矽化、冷噴塗(例如,Al、所有等級的不銹鋼、鋅、鍍鋅、鎳)、熱噴塗或電漿噴塗(例如,Al、所有等級的不銹鋼、鋅、鍍鋅、鎳、銅、青銅)、覆層、及液體施覆塗層(例如,漆、UV固化之,聚合物漆)。The substrate, the metal layer, or the composition containing the metal layer may undergo any treatment method before, during, and/or after the deposition of the metal layer. Exemplary manufacturing processes may include, but are not limited to, forming, soft or hard tool handling, fastening, and seam or cut edge protection. Exemplary forming, soft or hard tool processing processes may include stretching or pulling forming, re-molding, impact forming, spinning forming, roll forming, hydroforming, CNC forming, flanging, crimping, hemming ), hot stamping, extrusion and forging. Exemplary fastening processes may include toggle locking, bow locking, spot welding, welding, rod welding, arc welding, MIG welding, TIG welding, acetylene welding, resistance welding, ultrasonic welding, friction welding, laser welding, plasma Welding, seaming, riveting, hot forging and chemical adhesion (for example, glue or epoxy bonding). Exemplary seam or cut edge protection processes may include hot-dip galvanizing, electro-galvanizing, aluminum or aluminum plating, aluminum silicidation, cold spraying (e.g., Al, all grades of stainless steel, zinc, galvanized, nickel), thermal spraying or Plasma spraying (e.g., Al, all grades of stainless steel, zinc, galvanized, nickel, copper, bronze), cladding, and liquid applied coatings (e.g., lacquer, UV cured, polymer paint).
可將包含金屬層之基材或組合物成形為一或多個部件、構件或組件。包含金屬層之部件、構件或組件可用於任何適宜應用中,包括但不限於汽車、航空、運輸、海事、家電、構件、工業、電氣、生物醫學、軍事、消費者、美學、電子及結構應用。汽車應用可包括汽車油箱、暴露的車身面板(例如,門、引擎蓋及翼子板)、排氣組件(例如,消音器、催化轉化器外殼、排氣管、隔熱板)及未暴露的車身面板(例如,儀表板、門內件、輪罩內件)。電器應用可包括暴露的面板(例如,門外件、通風櫥、防濺板)及未暴露的面板(例如,洗碗機內部面板、熱水器水箱)。建構及結構應用可包括建築鑲板、導流管、管道、橫梁、鉸鏈、平板及緊固件。電氣應用可包括電機疊層、發電機疊層及發電機核心疊層。電腦系統 The substrate or composition containing the metal layer can be formed into one or more parts, components, or assemblies. The parts, components or assemblies containing the metal layer can be used in any suitable applications, including but not limited to automotive, aviation, transportation, maritime, household appliances, components, industrial, electrical, biomedical, military, consumer, aesthetics, electronic and structural applications . Automotive applications can include automotive fuel tanks, exposed body panels (e.g., doors, hoods, and fenders), exhaust components (e.g., silencers, catalytic converter housings, exhaust pipes, heat shields), and unexposed Body panels (for example, instrument panels, door interiors, wheel house interiors). Electrical applications may include exposed panels (for example, door exteriors, fume hoods, splash guards) and unexposed panels (for example, dishwasher interior panels, water heater tanks). Construction and structural applications may include building panels, draft tubes, pipes, beams, hinges, plates, and fasteners. Electrical applications can include motor stacks, generator stacks, and generator core stacks. computer system
本發明提供經程式化以實施本發明之方法之電腦系統。圖4顯示電腦控制系統401,其係經程式化或以其他方式組態以產生漿液及/或將漿液之塗層施覆至基材。電腦控制系統401可調節本發明之方法之各個態樣,諸如,例如,製備漿液之方法及將漿液之塗層施覆至基材之方法。電腦控制系統401可在使用者之電子裝置或相對於電子裝置位於遠側的電腦系統上實施。該電子裝置可係移動電子裝置。The invention provides a computer system programmed to implement the method of the invention. Fig. 4 shows a
電腦系統401包括中央處理單元(CPU,本文亦稱為「處理器」及「電腦處理器」) 405,其可係單核或多核處理器、或用於平行處理之複數個處理器。電腦控制系統401亦包括用於與一或多個其他系統通訊之記憶體或記憶體位置410 (例如,隨機存取記憶體、唯讀記憶體、快閃記憶體)、電子存儲單元415 (例如,硬盤)、通訊界面420(例如,網路適配器)、及周邊裝置425 (諸如快取區、其他記憶體、數據存儲及/或電子顯示適配器)。記憶體410、存儲單元415、界面420及周邊裝置425藉由通訊匯流排(實線) (諸如主板)與CPU 405通訊。存儲單元415可係用於存儲數據之數據存儲單元(或數據存儲庫)。電腦控制系統401可藉助於通訊界面420可操作地耦合至電腦網路(「網路」) 430。網路430可係國際網路(Internet)、內部網(internet)及或外部網、或與國際網路通訊之內部網及/或外部網。在一些情況下,網路430係電信及/或數據網路。網路430可包括一或多個電腦伺服器,其可啟用分佈式計算,諸如雲計算。在一些情況下,藉助於電腦系統401,網路430可實施對等網路(peer-to-peer network),該對等網路可使耦合至電腦系統401之裝置能夠充當用戶端或伺服器。The
CPU 405可執行可在程式或軟體中實施的一系列機器可讀指令。指令可存儲在記憶體位置(諸如記憶體410)中。指令可指向CPU 405,其可於隨後經編程或以其他方式組態CPU 405以實施本發明之方法。藉由CPU 405進行之操作之實例可包括獲取、解碼、執行及寫回。The
CPU 405可係電路(諸如積體電路)之部分。電路中可包括系統401之一或多個其他組件。在一些情況下,該電路係應用特定積體電路(ASIC)。The
存儲單元415可存儲文件,諸如驅動器、庫及保存的程式。存儲單元415可存儲使用者數據,例如,使用者偏好及使用者程式。在一些情況下,電腦系統401可包括位於電腦系統401外部(諸如位於藉由內部網或國際網路與電腦系統401通訊之遠側伺服器上)之一或多個另外數據存儲單元。The
電腦系統401可藉由網路430與一或多個遠側電腦系統通訊。例如,電腦系統401可與使用者(例如,控制漿液塗佈基材之製造之使用者)之遠側電腦系統通訊。遠側電腦系統之實例包括個人電腦(例如,可攜式PC)、平板型或桌面型PC (例如,Apple® iPad、Samsung® Galaxy Tab)、電話、智慧型電話(例如,Apple® iPhone、Android啟動裝置、Blackberry®)或個人數位助理。使用者可藉由網路430存取電腦系統401。The
可藉由存儲在電腦系統401之電子存儲位置上(諸如(例如)存儲在記憶體410或電子存儲單元415上)之機器(例如,電腦處理器)可執行代碼來實施如本文所述的方法。機器可執行或機器可讀代碼可以軟體之形式提供。在使用期間,代碼可藉由處理器405執行。在一些情況下,可從存儲單元415檢索代碼並存儲在記憶體410上以供處理器405即時存取。在一些情況下,可不包括電子存儲單元415,且將機器可執行指令存儲在記憶體410上。The method as described herein can be implemented by machine (for example, a computer processor) executable code stored in an electronic storage location of the computer system 401 (such as, for example, stored on the
代碼可經預編譯並經組態以與具有適於執行代碼之處理器之機器一起使用,或可在運行期間進行編譯。可用可選擇之程式化語言來提供代碼以使代碼能夠以預編譯或編譯時之方式執行。The code can be pre-compiled and configured for use with a machine with a processor suitable for executing the code, or it can be compiled during runtime. The code can be provided in an optional programming language so that the code can be executed in a pre-compiled or compile-time manner.
本文所提供的系統及方法(諸如電腦系統401)之態樣可以程式化實施。技術之各種態樣可視為通常呈機器(或處理器)可執行代碼及/或關聯數據之形式之「產品」或「製品」,該等代碼及/或關聯數據攜載在機器可讀介質或以機器可讀介質之類型體現。機器可執行代碼可存儲在電子存儲單元上,諸如記憶體(例如,唯讀記憶體、隨機存取記憶體、快閃記憶體)或硬盤。「存儲」類型介質可包括電腦、處理器或類似者之任何或所有有形記憶體、或其相關模組,諸如各種半導體記憶體、磁帶驅動器、磁盤驅動器及類似者,其等可在任何時間提供非臨時性存儲以用於軟體程式化。軟體之所有或部分有時可藉由國際網路或各種其他電信網路進行通訊。例如,此類通訊可使得能夠將軟體從一個電腦或處理器加載至另一電腦或處理器中,例如,從管理伺服器或主體電腦加載至應用伺服器之電腦平臺。因此,可承載軟體元件之另一種類型之介質包括光波、電波及電磁波,諸如藉由有線及光學座機網路及在各種空中鏈路上跨本地裝置之間的物理界面上使用。攜帶此種波(諸如有線或無線鏈路、光鏈路或類似者)之物理元件亦可被視為承載軟體之介質。如本文所用,除非受限於非暫態有形「存儲」介質,否則術語(諸如電腦或機器「可讀介質」)係指參與對處理器提供指令以用於執行之任何介質。The aspect of the system and method (such as the computer system 401) provided herein can be implemented programmatically. Various aspects of technology can be regarded as "products" or "articles" usually in the form of machine (or processor) executable code and/or related data, which are carried on machine-readable media or Reflected in the type of machine-readable medium. The machine executable code may be stored on an electronic storage unit, such as a memory (for example, read-only memory, random access memory, flash memory) or hard disk. "Storage" type media can include any or all tangible memory of computers, processors or the like, or related modules, such as various semiconductor memories, tape drives, disk drives and the like, which can be provided at any time Non-temporary storage for software programming. All or part of the software can sometimes be communicated via an international network or various other telecommunication networks. For example, this type of communication may enable software to be loaded from one computer or processor to another computer or processor, for example, from a management server or a host computer to a computer platform of an application server. Therefore, another type of medium that can carry software components includes light waves, electric waves, and electromagnetic waves, such as through wired and optical landline networks, and across various air links across physical interfaces between local devices. The physical components that carry such waves (such as wired or wireless links, optical links, or the like) can also be regarded as media that carry software. As used herein, unless restricted to non-transitory tangible "storage" media, terms (such as computer or machine "readable media") refer to any medium that participates in providing instructions to a processor for execution.
因此,機器可讀介質(諸如電腦可執行代碼)可採取許多形式,包括但不限於有形存儲介質、載波介質或物理轉移介質。非易失性存儲介質包括(例如)諸如可用於實施附圖中所示的數據庫等之光盤或磁盤,諸如任何電腦或類似者中之任何存儲裝置。易失性存儲介質包括動態記憶體,諸如此種電腦平臺之主記憶體。有形轉移介質包括同軸電纜;銅線及光纖,包括構成電腦系統內匯流排之電線。載波轉移介質可採用電信號或電磁信號或聲波或光波(諸如在射頻(RF)及紅外(IR)數據通訊期間生成的其等聲波或光波)之形式。因此,電腦可讀介質之常見形式包括(例如):軟盤、可撓盤、硬盤、磁帶、任何其他磁性介質、CD-ROM、DVD或DVD-ROM、任何其他光學介質、打孔卡紙磁帶、具有孔圖案之任何其他物理存儲介質、RAM、ROM、PROM及EPROM、FLASH-EPROM、任何其他記憶體晶圓或盒帶、轉移數據或指令之載波、轉移此種載波之電纜或鏈路、或電腦可從其讀取程式化代碼及/或數據之任何其他介質。此等形式之電腦可讀介質中之許多形式可涉及將一或多個指令之一或多個序列攜帶至處理器以用於執行。Therefore, a machine-readable medium (such as computer executable code) may take many forms, including but not limited to tangible storage media, carrier wave media, or physical transfer media. The non-volatile storage medium includes, for example, an optical disk or a magnetic disk that can be used to implement the database shown in the drawings, and any storage device in any computer or the like. Volatile storage media include dynamic memory, such as the main memory of this computer platform. The tangible transfer medium includes coaxial cable; copper wire and optical fiber, including the wires that make up the bus in a computer system. The carrier transfer medium may take the form of electrical or electromagnetic signals, or acoustic or light waves (such as those generated during radio frequency (RF) and infrared (IR) data communications). Therefore, common forms of computer readable media include (for example): floppy disks, flexible disks, hard disks, magnetic tapes, any other magnetic media, CD-ROM, DVD or DVD-ROM, any other optical media, punched cardboard tape, Any other physical storage media with hole patterns, RAM, ROM, PROM and EPROM, FLASH-EPROM, any other memory wafer or cassette, carrier for transferring data or instructions, cable or link for transferring such carrier, or computer Any other medium from which programmed code and/or data can be read. Many of these forms of computer-readable media may involve carrying one or more sequences of one or more instructions to a processor for execution.
電腦系統401可包括電子顯示器435或與其通訊,該電子顯示器435包括用於提供例如用於產生漿液及/或將漿液施覆至基材之參數之使用者界面(UI) 440。UI之實例包括但不限於圖形使用者界面(GUI)及基於網站之使用者界面。The
可藉由一或多種算法之方式來實施本發明之方法及系統。可藉由中央處理單元405在執行時藉由軟體來實施算法。該算法可例如調節漿液之混合剪切速率、添加至漿液混合物之每種成分的量及將成分添加至漿液混合物之順序。作為另一個實例,該算法可調節將漿液施覆至基材之速度及施覆至基材之漿液之塗層數量。實例 實例 1 The method and system of the present invention can be implemented by one or more algorithms. The algorithm can be implemented by the
在一個實例中,藉由添加至混合腔室同時混合所得溶液來形成漿液。改變添加至漿液之水的量以形成多種漿液,並記錄所產生的對漿液性質之效應。接下來,藉由輥塗製程將漿液施覆至基材。然後在約200℃下退火漿液約2小時。然後將漿液乾燥至完全約2小時至約100小時或更長時間。鉻化製品之表面附近的氛圍可係低於約-20°F露點。實例 2 In one example, the slurry is formed by adding to the mixing chamber while mixing the resulting solution. The amount of water added to the slurry was changed to form a variety of slurries, and the effect on the properties of the slurry was recorded. Next, the slurry is applied to the substrate through a roll coating process. The slurry is then annealed at about 200°C for about 2 hours. The slurry is then dried to complete for about 2 hours to about 100 hours or more. The atmosphere near the surface of the chromed product can be below about -20°F dew point. Example 2
在另一個實例中,以約10℃/min之速率加熱基材至約500℃。保持該溫度恆定約2小時,在該時間期間,含金屬層鄰接基材沉積。然後以約10℃/min之速率加熱該基材至約950℃。在退火製程期間保持該溫度恆定。約30小時後,以約5℃/min之速度使該基材冷卻至室溫。在整個製程期間,氬氣之流量係恆定的。實例 3 In another example, the substrate is heated to about 500°C at a rate of about 10°C/min. The temperature is kept constant for about 2 hours, during which time the metal-containing layer is deposited adjacent to the substrate. The substrate is then heated to about 950°C at a rate of about 10°C/min. Keep this temperature constant during the annealing process. After about 30 hours, the substrate was cooled to room temperature at a rate of about 5°C/min. During the whole process, the flow rate of argon is constant. Example 3
在另一個實例中,基材經歷熱循環方案。以約10℃/min之速率加熱基材至約500℃。保持該溫度恆定約2小時,在該時間期間,含金屬層鄰接基材沉積。然後以約10℃/min之速率加熱該基材至約925℃,且保持該溫度恆定約30分鐘。以約5℃/min之速率使該基材冷卻至約500℃,其中保持該溫度恆定約30分鐘。再次以約5℃/min之速率加熱該基材至約925℃,保持在恆溫約30分鐘,然後以約5℃/min之速率冷卻至約500℃且保持恆定約30分鐘。在另一個循環中,再一次加熱並冷卻該基材。加熱該基材至約925℃,然後以約5℃/min之速率使該基材冷卻至室溫。在整個製程期間,氬氣之流量係恆定的。實例 4 In another example, the substrate undergoes a thermal cycling protocol. The substrate is heated to about 500°C at a rate of about 10°C/min. The temperature is kept constant for about 2 hours, during which time the metal-containing layer is deposited adjacent to the substrate. The substrate is then heated at a rate of about 10°C/min to about 925°C, and the temperature is kept constant for about 30 minutes. The substrate is cooled to about 500°C at a rate of about 5°C/min, where the temperature is kept constant for about 30 minutes. The substrate is heated again at a rate of about 5°C/min to about 925°C, kept at a constant temperature for about 30 minutes, and then cooled to about 500°C at a rate of about 5°C/min and kept constant for about 30 minutes. In another cycle, the substrate is heated and cooled again. Heat the substrate to about 925°C, and then cool the substrate to room temperature at a rate of about 5°C/min. During the whole process, the flow rate of argon is constant. Example 4
在另一個實例中,提供包含碳、矽、錳、鈦、釩、鋁及氮之基材。在一個實例中,基材具有以下組分,以重量%計:
在另一個實例中,提供包含碳、矽、錳、鈦、釩、鋁及氮之基材。在一個實例中,基材具有以下組分,以重量%計:
在另一個實例中,基材經形成且展現以下性質:
在另一個實例中,基材經形成且展現以下性質:
合金之鈮重量百分比計算如下: Nb重量%=(0.017-(Ti重量%-3.42*N重量%-1.49*S重量%-4*C重量%))/0.516The weight percentage of niobium in the alloy is calculated as follows: Nb weight%=(0.017-(Ti weight%-3.42*N weight%-1.49*S weight%-4*C weight%))/0.516
選擇基材化學使其具有0.017或更高之穩定化計算值,其中穩定化計算如下: 穩定化=Ti重量%-3.42*N重量%-1.49*S重量%-4*C重量%+0.516*Nb重量%。實例 8 The substrate chemistry is selected to have a stabilization calculation value of 0.017 or higher, where the stabilization calculation is as follows: Stabilization = Ti wt%-3.42*N wt%-1.49*S wt%-4*C wt%+0.516* Nb wt%. Example 8
在另一個實例中,基材經形成且展現構成金屬及其他元素之以下組成,以重量%測得:
在另一個實例中,對實例8中所列基材進行熱機械測試以確定其r值。測試結果如下:
在另一個實例中,藉由將MgCr2 O4 粉末及MgCl2 粉末在水中混合在一起來產生漿液懸浮液。將MgCr2 O4 粉末及MgCl2 粉末二者過篩以具有介於約0.1 μm與10 μm之間的顆粒尺寸。MgCr2 O4 粉末及MgCl2 粉末之乾重百分比分別為約95%及5%。將MgCr2 O4 粉末及MgCl2 粉末混合四小時後,添加鋁粉至該懸浮液。將鋁粉過篩使得其通過325網目篩網。將鋁混合至漿液粉末中使得其與氧化物粉末之原子比為約1.0。將包含鋁粉之漿液混合物立即輥塗至金屬片材之表面上。然後以約10℃/min之速率加熱該基材至約950℃。在退火製程期間保持溫度恆定。約30小時後,以約5℃/min之速度使該基材冷卻至室溫。在整個製程期間,氬氣之流量係恆定的。在退火之後,金屬基材經歷清潔製程以從基材表面去除Al2 O3 。實例 11 In another example, a slurry suspension is produced by mixing MgCr 2 O 4 powder and MgCl 2 powder together in water. Both the MgCr 2 O 4 powder and the MgCl 2 powder were sieved to have a particle size between about 0.1 μm and 10 μm. The dry weight percentages of MgCr 2 O 4 powder and MgCl 2 powder are about 95% and 5%, respectively. After mixing MgCr 2 O 4 powder and MgCl 2 powder for four hours, aluminum powder is added to the suspension. The aluminum powder is sieved so that it passes through a 325 mesh screen. The aluminum is mixed into the slurry powder so that its atomic ratio to the oxide powder is about 1.0. The slurry mixture containing aluminum powder was immediately roll-coated onto the surface of the metal sheet. The substrate is then heated to about 950°C at a rate of about 10°C/min. Keep the temperature constant during the annealing process. After about 30 hours, the substrate was cooled to room temperature at a rate of about 5°C/min. During the whole process, the flow rate of argon is constant. After annealing, the metal substrate undergoes a cleaning process to remove Al 2 O 3 from the surface of the substrate. Example 11
在另一個實例中,構成基材以展現高達80%之較高屈服強度及高達50%之較高抗拉強度。在一些情況下,基材經形成且展現構成金屬及其他元素之以下組成,以重量%測得:
在另一個實例中,對實例11中所列基材進行熱機械測試以確定其Ti/Nb穩定性、屈服強度、極限抗拉強度及伸長率。測試結果如下:
本文之材料、裝置、系統及方法(包括材料組合物(例如材料層))可與其他材料、裝置、系統及方法(包括材料組合物)組合或經其修改,諸如,例如,彼等描述於美國專利公開案第2013/0171471號;美國專利公開案第2013/0309410號;美國專利公開案第2013/0252022號;美國專利公開案第2015/0167131號;美國專利公開案第2015/0345041號;及專利合作條約申請案第PCT/US2016/017155號中者,該等案各以全文引用之方式併入本文中。The materials, devices, systems, and methods (including material compositions (such as material layers)) herein can be combined with or modified by other materials, devices, systems, and methods (including material compositions), such as, for example, they are described in U.S. Patent Publication No. 2013/0171471; U.S. Patent Publication No. 2013/0309410; U.S. Patent Publication No. 2013/0252022; U.S. Patent Publication No. 2015/0167131; U.S. Patent Publication No. 2015/0345041; And Patent Cooperation Treaty Application No. PCT/US2016/017155, each of which is incorporated herein by reference in its entirety.
雖然已在本文中顯示並描述本發明之較佳實施例,但熟習此項技術者明白此等實施例僅以舉例方式提供。並非意圖藉由本說明書中提供之特定實例來限制本發明。雖然已參考前述說明書來描述本發明,但本文中的實施例之描述及說明並不意味著以限制意義來解釋。熟習此項技術者現將在不脫離本發明下做出許多改變、變化及取代。此外,應明瞭,本發明之所有態樣不受限於本文所述的特定描繪、組態或相對比例,此取決於各種條件及變數。應明瞭,本文所述的本發明實施例之各種替代可用於實踐本發明。因此,可預期本發明亦應涵蓋任何此等替代、修改、變化或等效物。希望以下申請專利範圍限定本發明之範疇且因而涵蓋屬於該等申請專利範圍及其等效物之範疇內之方法及結構。Although the preferred embodiments of the present invention have been shown and described herein, those skilled in the art will understand that these embodiments are provided by way of example only. It is not intended to limit the present invention by the specific examples provided in this specification. Although the present invention has been described with reference to the foregoing specification, the description and description of the embodiments herein are not meant to be interpreted in a limiting sense. Those who are familiar with this technology will now make many changes, changes and substitutions without departing from the present invention. In addition, it should be understood that all aspects of the present invention are not limited to the specific depictions, configurations or relative proportions described herein, which depend on various conditions and variables. It should be understood that various alternatives to the embodiments of the invention described herein can be used to practice the invention. Therefore, it is expected that the present invention should also cover any such alternatives, modifications, changes or equivalents. It is hoped that the scope of the following patent applications will limit the scope of the present invention and thus cover the methods and structures within the scope of these patent applications and their equivalents.
110:操作 120:操作 130:操作 140:操作 401:電腦控制系統/電腦系統 405:中央處理單元 410:記憶體/記憶體位置 415:電子存儲單元 420:通訊界面 425:周邊裝置 430:網路 435:電子顯示器 440:使用者界面(UI)110: Operation 120: Operation 130: Operation 140: Operation 401: computer control system/computer system 405: Central Processing Unit 410: Memory/Memory Location 415: electronic storage unit 420: Communication interface 425: Peripheral Devices 430: Network 435: electronic display 440: User Interface (UI)
在隨附申請專利範圍中陳述具特定性之本發明之新穎特徵。藉由參考以下詳細說明及附圖(亦係本文中的「圖(figure)」及「圖(FIG.)」)將更佳地明瞭本發明之特徵及優點,該詳細說明陳述其中利用本發明原理之示例性實施例,該附圖為:The specific novel features of the present invention are stated in the scope of the attached patent application. The features and advantages of the present invention will be better understood by referring to the following detailed description and accompanying drawings (also referred to as "figure" and "FIG." in this article). The detailed description states that the present invention is utilized An exemplary embodiment of the principle, the drawing is:
圖1示意地說明一種用於形成鄰接基材之金屬層之方法;Figure 1 schematically illustrates a method for forming a metal layer adjacent to a substrate;
圖2說明以金屬層塗佈之後的鋼基材;Figure 2 illustrates the steel substrate after coating with a metal layer;
圖3說明以金屬層塗佈之後的鋼基材;及Figure 3 illustrates the steel substrate after coating with a metal layer; and
圖4示意性地說明電腦控制系統,該電腦控制系統係經程式化或以其他方式經組態以實施本文所提供之方法。Figure 4 schematically illustrates a computer control system, which is programmed or otherwise configured to implement the methods provided herein.
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EP1225242B1 (en) * | 2001-01-18 | 2004-04-07 | JFE Steel Corporation | Ferritic stainless steel sheet with excellent workability and method for making the same |
GB2399824A (en) * | 2002-09-21 | 2004-09-29 | Univ Birmingham | Metal coated metallurgical particles |
KR100499348B1 (en) * | 2002-11-05 | 2005-07-04 | 주식회사 엔비켐 | A Method for Coating Double-Layered Particles of Metal-Metal Oxide and Depositing Active Catalyst Particles onto Metal Substrates for Preparing Metal Monolith Catalyst Modules |
JP3757418B1 (en) * | 2005-01-19 | 2006-03-22 | 石川島播磨重工業株式会社 | Method for local application of diffusion aluminide coating |
WO2006089222A2 (en) * | 2005-02-18 | 2006-08-24 | Nanomat, Inc. | Metal nano-powder compositions and methods for preparing same |
DE102013207457B4 (en) * | 2013-04-24 | 2017-05-18 | MTU Aero Engines AG | Process for the preparation of a high temperature protective coating |
TWI471071B (en) * | 2013-05-21 | 2015-01-21 | Innolux Corp | Manufacturing method of conductive line, and device comprising conductive line |
WO2016130548A1 (en) * | 2015-02-10 | 2016-08-18 | Arcanum Alloy Design, Inc. | Methods and systems for slurry coating |
EP3426807A4 (en) * | 2016-03-08 | 2019-11-13 | Arcanum Alloy Design Inc. | Methods for metal coating |
WO2017201418A1 (en) * | 2016-05-20 | 2017-11-23 | Arcanum Alloys, Inc. | Methods and systems for coating a steel substrate |
-
2020
- 2020-02-14 EP EP20756560.7A patent/EP3924533A4/en not_active Withdrawn
- 2020-02-14 CN CN202080028565.4A patent/CN113748228A/en active Pending
- 2020-02-14 WO PCT/US2020/018243 patent/WO2020168163A1/en unknown
- 2020-02-14 TW TW109104832A patent/TW202045746A/en unknown
- 2020-02-14 JP JP2021547558A patent/JP2022520117A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
EP3924533A1 (en) | 2021-12-22 |
CN113748228A (en) | 2021-12-03 |
JP2022520117A (en) | 2022-03-28 |
EP3924533A4 (en) | 2023-07-12 |
WO2020168163A1 (en) | 2020-08-20 |
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