TW202043516A - Cooling chamber, ALN buffer layer growth processing equipment and cooling treatment method - Google Patents

Cooling chamber, ALN buffer layer growth processing equipment and cooling treatment method Download PDF

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TW202043516A
TW202043516A TW109111549A TW109111549A TW202043516A TW 202043516 A TW202043516 A TW 202043516A TW 109111549 A TW109111549 A TW 109111549A TW 109111549 A TW109111549 A TW 109111549A TW 202043516 A TW202043516 A TW 202043516A
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cooling
tray
temperature
chamber
stage
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TW109111549A
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TWI796558B (en
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郭冰亮
董博宇
武學偉
馬迎功
趙晨光
武樹波
楊依龍
李新穎
李麗
宋玲彥
張璐
陳玉靜
劉玉傑
張家昊
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大陸商北京北方華創微電子裝備有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates

Abstract

The embodiment of the invention discloses a cooling chamber, ALN buffer layer growth processing equipment and a cooling treatment method adopting the cooling chamber. The cooling chamber includes a chamber body, a water cooling disc arranged in the chamber body, a tray and an adjustment mechanism; and the tray is used for carrying wafers, the water cooling disc is used for cooling the tray, and the adjustment mechanism is used for adjusting the distance between the tray and the water cooling disc. By means of the cooling chamber, the equipment and the cooling treatment method, the temperature uniformity of cooling of the tray and the wafers can be increased, the stability and consistency of the process result are ensured, and the tray can be cooled to a lower temperature under the condition that the tray is not broken; and the target temperature can be reached within less time, and the capacity of the device is increased.

Description

冷卻腔室、物理氣相沉積設備和冷卻方法Cooling chamber, physical vapor deposition equipment and cooling method

本創作是關於一種半導體製造技術領域，特別是關於一種冷卻腔室、物理氣相沉積設備和冷卻方法。This creation is about a semiconductor manufacturing technology field, especially about a cooling chamber, physical vapor deposition equipment and cooling method.

物理氣相沉積(Physical Vapor Deposition，以下簡稱PVD)技術被廣泛應用於半導體領域，其採用濺射（Sputtering）沉積技術，在襯底和靶材之間通入氬氣等惰性氣體，高電壓將惰性氣體電離產生等離子體，藉由磁場增強束縛電子的能力使產生的等離子體轟擊靶材，將靶材材料的原子或離子沉積在襯底上形成薄膜。Physical Vapor Deposition (hereinafter referred to as PVD) technology is widely used in the semiconductor field. It uses sputtering (Sputtering) deposition technology to pass inert gas such as argon between the substrate and the target. The high voltage will The ionization of inert gas generates plasma. The magnetic field enhances the ability to bind electrons to bombard the target with the generated plasma, depositing atoms or ions of the target material on the substrate to form a thin film.

採用濺射設備製備AlN（氮化鋁）緩衝層在LED領域已經成為標準的工藝製程。由於AlN緩衝層的加入，LED顯示裝置的亮度、良率等電性指標得到較大提升，並且能夠有效降低LED結構的厚度，降低了成本。由於AlN的結晶溫度較高，通常為600℃至00℃，襯底在經過高溫濺射工藝之後必須經過有效的冷卻才可以從濺射設備取出。Using sputtering equipment to prepare AlN (aluminum nitride) buffer layer has become a standard process in the LED field. Due to the addition of the AlN buffer layer, the electrical indicators such as the brightness and yield of the LED display device have been greatly improved, and the thickness of the LED structure can be effectively reduced, and the cost can be reduced. Since the crystallization temperature of AlN is relatively high, usually 600°C to 00°C, the substrate must be effectively cooled after the high-temperature sputtering process before it can be taken out of the sputtering equipment.

如圖1所示，典型的PVD設備包括裝卸載腔室、傳輸腔室、工藝腔室和冷卻腔室。採用該PVD設備製備AlN薄膜的完整過程為：首先將承載晶圓（Wafer）的托盤經過裝載腔室裝載，再經由傳輸腔室中的機械手傳輸至工藝腔室中，進行高溫濺鍍工藝，以在晶圓上形成AlN薄膜；待工藝完成中，將晶圓經由傳輸腔室中的機械手傳輸至冷卻腔室，對晶圓進行冷卻；最後，再由機械手將晶圓傳至裝卸載腔室，以卸載取出晶圓。As shown in Figure 1, a typical PVD equipment includes a loading and unloading chamber, a transfer chamber, a process chamber, and a cooling chamber. The complete process of using the PVD equipment to prepare AlN thin film is: first load the wafer-bearing tray through the loading chamber, and then transfer it to the process chamber via the robot in the transfer chamber for high-temperature sputtering. To form an AlN film on the wafer; when the process is completed, the wafer is transferred to the cooling chamber via the robot in the transfer chamber to cool the wafer; finally, the robot transfers the wafer to loading and unloading To unload the chamber to remove the wafer.

當前，對PVD設備進行冷卻的工藝時間以及冷卻後托盤的溫度均有較高的要求，冷卻時間一般要求為6至10分鐘；冷卻後托盤的溫度要求為 60℃以下。但是，現有的冷卻腔室在整個冷卻過程中的托盤高度是固定的，在這種情況下，若托盤設置在距離冷卻盤較近的位置處，或者直接放置在冷卻盤上，會導致托盤的冷卻速率過快，可能會造成托盤碎裂；若托盤設置在距離冷卻盤較遠的位置處，則無法同時滿足對冷卻時間和冷卻溫度的要求。另外，由由於冷卻腔室的結構和冷卻水分佈無法保證完全對稱，導致無法對托盤的不同位置以同等的速度進行冷卻，從而造成托盤的溫度均勻性較差。At present, the process time for cooling PVD equipment and the temperature of the tray after cooling have high requirements. The cooling time is generally required to be 6 to 10 minutes; the temperature of the tray after cooling is required to be below 60°C. However, the existing cooling chamber has a fixed tray height during the entire cooling process. In this case, if the tray is placed closer to the cooling tray, or placed directly on the cooling tray, it will cause the tray to become unstable. If the cooling rate is too fast, the tray may break; if the tray is set far away from the cooling plate, the requirements for cooling time and cooling temperature cannot be met at the same time. In addition, because the structure of the cooling chamber and the cooling water distribution cannot guarantee complete symmetry, it is impossible to cool different positions of the tray at the same speed, resulting in poor temperature uniformity of the tray.

有鑑於此，提出一種更佳的改善方案，乃為此業界亟待解決的問題。In view of this, proposing a better improvement plan is an urgent problem in the industry.

本創作的主要目的在於，提出一種冷卻腔室、物理氣相沉積設備和冷卻方法，其不僅可以避免發生碎盤，而且還可以同時滿足對冷卻時間和冷卻溫度的要求，另外還可以提高托盤和晶圓的溫度均勻性，從而保證工藝結果的穩定性和一致性。The main purpose of this creation is to propose a cooling chamber, physical vapor deposition equipment, and cooling method, which can not only avoid the occurrence of broken disks, but also meet the requirements for cooling time and cooling temperature at the same time, and can also improve the tray and The temperature uniformity of the wafer ensures the stability and consistency of the process results.

為達上述目的，本創作所提出的冷卻腔室，其用於冷卻一能承載晶圓的托盤；該冷卻腔室包含： 一腔室本體； 一冷卻盤，其設置在該腔室本體內，並用於承載並冷卻該托盤及該托盤所承載的晶圓；以及 一調節機構，其設置在該腔室本體內，並用於調節該托盤與該冷卻盤之間的一垂直距離，且該調節機構採用以該腔室本體的軸線為中心線的軸對稱結構。To achieve the above purpose, the cooling chamber proposed in this creation is used to cool a tray that can hold wafers; the cooling chamber includes: A chamber body; A cooling tray, which is arranged in the chamber body and used to carry and cool the tray and the wafers carried by the tray; and An adjustment mechanism is arranged in the chamber body and used to adjust a vertical distance between the tray and the cooling plate, and the adjustment mechanism adopts an axisymmetric structure with the axis of the chamber body as the centerline.

為達上述目的，本創作所提出的物理氣相沉積設備，包含如前所述的冷卻腔室。To achieve the above purpose, the physical vapor deposition equipment proposed in this creation includes the cooling chamber as described above.

為達上述目的，本創作所提出的冷卻方法，其採用如前所述的冷卻腔室對一托盤進行冷卻處理，該冷卻方法包含： 依次進行的多個冷卻階段，以對該托盤進行冷卻； 在依次進行該多個冷卻階段的過程中，藉由調節各該等冷卻階段的冷卻時間及該托盤與該冷卻盤之間的該垂直距離，來避免該托盤碎盤，以使冷卻效率和冷卻後的托盤溫度滿足預設要求。To achieve the above objective, the cooling method proposed in this creation uses the cooling chamber as described above to cool a tray. The cooling method includes: Several cooling stages are carried out in sequence to cool the tray; In the process of performing the multiple cooling stages in sequence, by adjusting the cooling time of each cooling stage and the vertical distance between the tray and the cooling plate, the tray is prevented from shattering, so that the cooling efficiency and cooling The temperature of the rear tray meets the preset requirements.

如前所述之冷卻腔室中，該調節機構包含： 一升降托盤支架，其包含： 一支撐面，其能夠支撐該托盤； 其中，該升降托盤支架被設置為能夠藉由帶動該托盤升降來調節該托盤與該冷卻盤之間的該垂直距離。In the aforementioned cooling chamber, the adjustment mechanism includes: A lifting tray support, which includes: A supporting surface capable of supporting the tray; Wherein, the lifting tray support is configured to be able to adjust the vertical distance between the tray and the cooling tray by driving the tray to lift.

如前所述之冷卻腔室中，該冷卻盤在該托盤被置於該支撐面上時位於該托盤的下方，且該升降托盤支架能夠藉由升降使該支撐面位於高於或低於該冷卻盤的位置，以實現將該托盤在該升降托盤支架與該冷卻盤之間傳遞。In the aforementioned cooling chamber, the cooling tray is located below the tray when the tray is placed on the supporting surface, and the lifting tray bracket can lift the supporting surface above or below the supporting surface. The position of the cooling tray to realize the transfer of the tray between the lifting tray support and the cooling tray.

如前所述之冷卻腔室中，該升降托盤支架包含一支架本體和一環形凸臺，該環形凸臺設置在該支架本體上，該環形凸臺與該腔室本體同軸設置，且該環形凸臺的上表面為該支撐面，且該環形凸臺的內徑大於該冷卻盤的外徑。In the aforementioned cooling chamber, the lifting tray bracket includes a bracket body and an annular boss, the annular boss is arranged on the bracket body, the annular boss is arranged coaxially with the chamber body, and the annular boss The upper surface of the boss is the supporting surface, and the inner diameter of the annular boss is larger than the outer diameter of the cooling plate.

如前所述之冷卻腔室中，該冷卻腔室還包含至少一測溫裝置，該至少一測溫裝置用於檢測位於該腔室本體內的該托盤的溫度。In the aforementioned cooling chamber, the cooling chamber further includes at least one temperature measuring device, and the at least one temperature measuring device is used to detect the temperature of the tray located in the chamber body.

如前所述之冷卻腔室中，該至少一測溫裝置的數量為多個，且沿該腔室本體的徑向間隔分佈，用以分別檢測該托盤的徑向上不同位置的托盤溫度。In the aforementioned cooling chamber, the number of the at least one temperature measuring device is multiple and distributed along the radial interval of the chamber body to detect the tray temperature at different positions in the radial direction of the tray.

如前所述之冷卻腔室中，該測溫裝置的數量為三個，分別用於檢測該托盤的中心、半徑中點、和外邊緣的位置相對應的托盤溫度。In the aforementioned cooling chamber, the number of the temperature measuring devices is three, which are respectively used to detect the tray temperature corresponding to the position of the center, the midpoint of the radius, and the outer edge of the tray.

如前所述之冷卻腔室中，該測溫裝置包含一紅外測溫裝置。In the aforementioned cooling chamber, the temperature measuring device includes an infrared temperature measuring device.

如前所述之冷卻腔室中，該冷卻腔室還包含一勻氣環，該勻氣環設置在該腔室本體內，且在該勻氣環具有一冷卻氣體通道，該冷卻氣體通道位於該勻氣環中，並用於向該腔室本體引入冷卻氣體。In the aforementioned cooling chamber, the cooling chamber further includes a homogenizing ring disposed in the chamber body, and having a cooling gas channel in the homogenizing ring, the cooling gas channel being located The uniform gas ring is used to introduce cooling gas into the chamber body.

如前所述之冷卻腔室中，該冷卻氣體通道具有多個出氣口，該多個出氣口沿該勻氣環的周向均勻分佈；並且，各該出氣口的出氣方向均朝向該腔室本體的軸線傾斜一預設的角度。In the aforementioned cooling chamber, the cooling gas channel has a plurality of air outlets, and the plurality of air outlets are evenly distributed along the circumferential direction of the uniform gas ring; and the air outlet direction of each air outlet faces the cavity The axis of the main body is inclined at a predetermined angle.

如前所述之冷卻方法中，在依次進行多個該冷卻階段的過程中，該垂直距離逐漸減小。In the aforementioned cooling method, the vertical distance gradually decreases during the process of performing a plurality of the cooling stages in sequence.

如前所述之冷卻方法中，該等冷卻階段為四個，分別為第一階段、第二階段、第三階段和第四階段，其中， 該第一階段對應的該垂直距離為4公釐，且冷卻時間為1.3分鐘至1.9分鐘； 該第二階段對應的該垂直距離為2公釐，且冷卻時間為1.1分鐘至1.4分鐘； 該第三階段對應的該垂直距離為1公釐，且冷卻時間為1.1分鐘至1.4分鐘； 該第四階段對應的該垂直距離為0公釐，且冷卻時間為2.4分鐘至2.6分鐘。In the aforementioned cooling method, there are four cooling stages, namely the first stage, the second stage, the third stage and the fourth stage. Among them, The vertical distance corresponding to the first stage is 4 mm, and the cooling time is 1.3 minutes to 1.9 minutes; The vertical distance corresponding to the second stage is 2 mm, and the cooling time is 1.1 minutes to 1.4 minutes; The vertical distance corresponding to the third stage is 1 mm, and the cooling time is 1.1 minutes to 1.4 minutes; The vertical distance corresponding to the fourth stage is 0 mm, and the cooling time is 2.4 minutes to 2.6 minutes.

如前所述之冷卻方法中，還包含： 檢測當前冷卻階段結束後的托盤溫度； 判斷當前冷卻階段結束後的托盤溫度是否低於一預設標準溫度； 如果是，則進行下一冷卻階段；如果否，則繼續冷卻一預設的補充冷卻時間，並重新檢測托盤溫度，然後判斷重新檢測的托盤溫度是否低於該預設標準溫度，如果是，則進行下一冷卻階段，如果否，則終止冷卻處理。The cooling method mentioned above also includes: Detect the tray temperature after the current cooling phase ends; Determine whether the tray temperature after the current cooling phase is over is lower than a preset standard temperature; If yes, proceed to the next cooling stage; if not, continue to cool for a preset supplementary cooling time, and re-detect the tray temperature, and then determine whether the re-detected tray temperature is lower than the preset standard temperature, if yes, then Proceed to the next cooling stage, if not, terminate the cooling process.

如前所述之冷卻方法中，還包含： 多個溫度採集時段，各該溫度採集時段中持續對托盤溫度進行檢測並記錄； 根據各該溫度採集時段採集到的多個托盤溫度，計算獲得各該溫度採集時段的一降溫速率； 判斷該降溫速率是否小於一安全速率； 如果是，則繼續進行冷卻處理；如果否，則終止冷卻處理並增加該托盤與該冷卻盤之間的距離，並停止向該腔室本體通入冷卻氣體。The cooling method mentioned above also includes: Multiple temperature collection periods, in each temperature collection period, the tray temperature is continuously detected and recorded; According to the multiple tray temperatures collected in each temperature collection period, calculate and obtain a temperature drop rate for each temperature collection period; Determine whether the cooling rate is less than a safe rate; If yes, continue the cooling process; if not, terminate the cooling process and increase the distance between the tray and the cooling plate, and stop passing cooling gas to the chamber body.

如前所述之冷卻方法中，還包含： 在進行冷卻處理的整個過程中，持續檢測該托盤的徑向上不同位置的多個托盤溫度； 基於該多個托盤溫度計算溫度平均值；其中，該溫度平均值等於該多個托盤溫度中的最大值與該多個托盤溫度中的最小值的差值的二分之一； 判斷該溫度平均值是否小於該溫度平均安全值； 如果是，則繼續進行冷卻處理；如果否，則終止冷卻處理並增加該托盤與該冷卻盤之間的距離，並停止向該腔室本體通入冷卻氣體。The cooling method mentioned above also includes: During the entire cooling process, continuously detect the temperature of multiple trays at different positions in the radial direction of the tray; Calculating an average temperature based on the temperatures of the plurality of trays; wherein the average temperature is equal to one half of the difference between the maximum value of the plurality of tray temperatures and the minimum value of the plurality of tray temperatures; Judge whether the average value of the temperature is less than the average safety value of the temperature; If yes, continue the cooling process; if not, terminate the cooling process and increase the distance between the tray and the cooling plate, and stop passing cooling gas to the chamber body.

本創作的有益效果：The beneficial effects of this creation:

本創作提供的冷卻腔室，其通過借助調節機構調節托盤與冷卻盤之間的垂直距離，可以隨著冷卻時間的累積，根據托盤的溫度變化調節該垂直距離，以避免因托盤在高溫時距離冷卻盤過近而導致降溫速率過快，發生碎盤，同時還能夠在托盤溫度下降至一定程度時通過減小托盤與冷卻盤之間的垂直距離來提高冷卻效率，從而可以同時滿足對冷卻時間和冷卻溫度的要求。另外，上述調節機構通過採用以腔室本體的軸線為中心線的軸對稱結構，可以提高對托盤和晶圓冷卻均勻性，進而可以提高托盤和晶圓的溫度均勻性，保證工藝結果的穩定性和一致性。The cooling chamber provided by this creation can adjust the vertical distance between the tray and the cooling plate with the help of an adjusting mechanism. As the cooling time accumulates, the vertical distance can be adjusted according to the temperature change of the tray to avoid the distance due to the tray at high temperature. The cooling plate is too close to cause the cooling rate to be too fast, and the plate is broken. At the same time, it can also improve the cooling efficiency by reducing the vertical distance between the tray and the cooling plate when the temperature of the tray drops to a certain extent, so that the cooling time can be met at the same time. And cooling temperature requirements. In addition, the above adjustment mechanism adopts an axisymmetric structure with the axis of the chamber body as the centerline, which can improve the uniformity of cooling the tray and the wafer, thereby improving the temperature uniformity of the tray and the wafer, and ensuring the stability of the process result And consistency.

本創作提供的物理氣相沉積設備，其通過採用本創作提供的上述冷卻腔室，不僅可以避免發生碎盤，而且還可以同時滿足對冷卻時間和冷卻溫度的要求，另外還可以提高托盤和晶圓的溫度均勻性，從而保證工藝結果的穩定性和一致性。The physical vapor deposition equipment provided by this creation can not only avoid the occurrence of disk shattering by using the above-mentioned cooling chamber provided by this creation, but also meet the requirements for cooling time and cooling temperature at the same time, and can also improve the tray and crystal The temperature uniformity of the circle ensures the stability and consistency of the process results.

本創作提供的冷卻方法，其通過採用本創作提供的上述冷卻腔室對托盤進行冷卻處理，不僅可以避免發生碎盤，而且還可以同時滿足對冷卻時間和冷卻溫度的要求，另外還可以提高托盤和晶圓的溫度均勻性，從而保證工藝結果的穩定性和一致性。The cooling method provided in this creation uses the above-mentioned cooling chamber provided by this creation to cool the tray, which can not only avoid the occurrence of broken disks, but also meet the requirements for cooling time and cooling temperature at the same time, and can also improve the tray And the temperature uniformity of the wafer to ensure the stability and consistency of the process results.

下面參照附圖對本創作進行更全面的描述，其中說明本創作的示例性實施例。下面將結合本創作實施例中的附圖，對本創作實施例中的技術特徵進行清楚、完整地描述，顯然，所描述的實施例僅僅是本創作一部分實施例，而不是全部的實施例。基於本創作中的實施例，本領域普通技術人員在沒有做出創造性勞動前提下所獲得的所有其他實施例，都屬於本創作保護的範圍。下面結合圖和實施例對本創作的技術方案進行多方面的描述。Hereinafter, the present creation will be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the present creation are illustrated. The technical features of the creative embodiment will be clearly and completely described below in conjunction with the accompanying drawings in the creative embodiment. Obviously, the described embodiments are only a part of the creative embodiments, not all the embodiments. Based on the embodiments in this creation, all other embodiments obtained by those of ordinary skill in the art without creative work are within the scope of protection of this creation. In the following, the technical solution of this creation will be described in various aspects with reference to the figures and embodiments.

下文為了敘述方便，下文中所稱的“左”、“右”、“上”、“下”與附圖本身的左、右、 上、下方向一致。下文中的“第一”、“第二”等，僅用於描述上相區別，並沒有其他特殊的含義。For the convenience of description hereinafter, the “left”, “right”, “up” and “down” referred to below are consistent with the left, right, up and down directions of the drawings themselves. The following "first", "second", etc., are only used to describe the difference, and have no other special meanings.

本創作實施例提供一種冷卻腔室，該冷卻腔室可應用在物理氣相沉積設備中，例如在採用該物理氣相沉積設備進行AlN緩衝層生長工藝的過程中，當晶圓在加工腔室中完成濺鍍處理之後，可將承載有晶圓的托盤傳入冷卻腔室中，對該托盤進行冷卻。This creative embodiment provides a cooling chamber, which can be used in physical vapor deposition equipment, for example, in the process of using the physical vapor deposition equipment to grow an AlN buffer layer, when the wafer is in the processing chamber After the sputtering process is completed, the tray carrying the wafer can be transferred into the cooling chamber to cool the tray.

在本實施例中，如圖2A和2B所示，冷卻腔室包括腔室本體1以及設置在該腔室本體1內的冷卻盤4和調節機構。其中，冷卻盤4用於冷卻托盤2，托盤2用於承載晶圓，具體地，該冷卻盤4設置在靠近腔室本體1的底部的位置處，且採用水冷的方式冷卻托盤2，如圖2A所示，在托盤2中設置有冷卻水道，該冷卻水道的進水口41和出水口42分別與冷卻水源的出水管和回水管連接，從而實現了冷卻水的迴圈。In this embodiment, as shown in FIGS. 2A and 2B, the cooling chamber includes a chamber body 1 and a cooling plate 4 and an adjustment mechanism provided in the chamber body 1. Among them, the cooling tray 4 is used to cool the tray 2, and the tray 2 is used to carry wafers. Specifically, the cooling tray 4 is arranged near the bottom of the chamber body 1, and the tray 2 is cooled by water cooling, as shown in the figure. As shown in 2A, a cooling water channel is provided in the tray 2, and the water inlet 41 and the water outlet 42 of the cooling water channel are respectively connected with the outlet pipe and the return pipe of the cooling water source, thereby realizing the loop of the cooling water.

調節機構用於調節托盤2與冷卻盤4之間的垂直距離，且該調節機構採用以腔室本體1的軸線為中心線的軸對稱結構。在本實施例中，該調節機構包括升降托盤支架3，該升降托盤支架3包括能夠支撐托盤2的支撐面33，且該升降托盤支架3被設置為能夠藉由帶動托盤2升降來調節托盤2與冷卻盤4之間的垂直距離。當然，在實際應用中，也可以使升降托盤支架3固定不動，而藉由使冷卻盤4升降來調節托盤2與冷卻盤4之間的垂直距離，或者還可以使升降托盤支架3和冷卻盤4均升降來調節托盤2與冷卻盤4之間的垂直距離。The adjustment mechanism is used to adjust the vertical distance between the tray 2 and the cooling plate 4, and the adjustment mechanism adopts an axisymmetric structure with the axis of the chamber body 1 as the center line. In this embodiment, the adjustment mechanism includes a lifting tray support 3, the lifting tray support 3 includes a supporting surface 33 capable of supporting the tray 2, and the lifting tray support 3 is configured to be able to adjust the tray 2 by driving the tray 2 to rise and fall. The vertical distance between the cooling plate 4. Of course, in practical applications, the lifting tray support 3 can also be fixed, and the vertical distance between the tray 2 and the cooling tray 4 can be adjusted by lifting the cooling tray 4, or the lifting tray support 3 and the cooling tray can be adjusted 4 are raised and lowered to adjust the vertical distance between the tray 2 and the cooling tray 4.

在本實施例中，冷卻盤4在托盤2被置於升降托盤支架3的支撐面33上時位於托盤2的下方，且升降托盤支架3能夠藉由升降使支撐面33位於高於或低於冷卻盤4的位置，以實現將托盤2在升降托盤支架3與冷卻盤4之間傳遞。當然，在實際應用中，也可以使冷卻盤4位於托盤2的上方，在這種情況下，升降托盤支架3可以藉由升降來調節托盤2與冷卻盤4之間的垂直距離，或者使托盤2與冷卻盤4相接觸。In this embodiment, the cooling tray 4 is located below the tray 2 when the tray 2 is placed on the supporting surface 33 of the lifting tray bracket 3, and the lifting tray bracket 3 can lift the supporting surface 33 above or below it. The position of the cooling tray 4 is to realize the transfer of the tray 2 between the lifting tray support 3 and the cooling tray 4. Of course, in practical applications, the cooling tray 4 can also be positioned above the tray 2. In this case, the lifting tray bracket 3 can adjust the vertical distance between the tray 2 and the cooling tray 4 by lifting, or make the tray 2 is in contact with the cooling plate 4.

升降托盤支架3可以有多種具體結構。例如，如圖2A所示，升降托盤支架3包括支架本體31和設置在該支架本體31上的環形凸臺32，其中，支架本體31由兩個直立設置的支撐板組成，兩個支撐板以腔室本體1的軸線為中心線對稱設置在腔室本體1的邊緣兩側；對應的，環形凸臺32由兩個水準設置的半環形平板組成，兩個半環形平板相對設置在兩個支撐板上，且各支撐板的上表面即為上述支撐面33，可與托盤2的下表面相接觸。並且，由兩個半環形平板組成的支撐面所在圓周的內徑大於冷卻盤4的外徑。這樣，升降托盤支架3能夠下降至使支撐面33低於冷卻盤4的位置，以實現托盤2的傳遞。The lifting tray support 3 can have various specific structures. For example, as shown in Figure 2A, the lifting tray bracket 3 includes a bracket body 31 and an annular boss 32 provided on the bracket body 31, wherein the bracket body 31 is composed of two upright support plates, and the two support plates are The axis of the chamber body 1 is symmetrically arranged on both sides of the edge of the chamber body 1 as the center line; correspondingly, the annular boss 32 is composed of two horizontally arranged semi-annular flat plates, and the two semi-annular flat plates are oppositely arranged on two supports The upper surface of each support plate is the above-mentioned support surface 33, which can be in contact with the lower surface of the tray 2. In addition, the inner diameter of the circumference of the supporting surface composed of two semi-annular flat plates is larger than the outer diameter of the cooling plate 4. In this way, the lifting tray support 3 can be lowered to a position where the supporting surface 33 is lower than the cooling tray 4 to realize the transfer of the tray 2.

需要說明的是，在本實施例中，環形凸臺32由兩個水準設置的半環形平板組成，但是，本創作並不局限於此，在實際應用中，環形凸臺32也可以由三個以上的平板組成，且三個以上的平板以腔室本體1的軸線為中心線對稱設置，或者由單個閉合的環形平板構成，該環形平板與腔室本體1同軸設置。It should be noted that in this embodiment, the annular boss 32 is composed of two horizontally arranged semi-annular flat plates. However, the present creation is not limited to this. In practical applications, the annular boss 32 can also consist of three The above flat plates are composed, and three or more flat plates are symmetrically arranged with the axis of the chamber body 1 as the center line, or are composed of a single closed annular flat plate, and the annular flat plate is arranged coaxially with the chamber body 1.

在一個實施例中，可以將托盤2與冷卻盤4之間的垂直距離定義為高度H1 、高度H2 、高度H3 、及高度H4 ，其中，高度H1 為4公釐、高度H2 為2公釐、高度H3 為1公釐、高度H4 為0公釐（即托盤2與冷卻盤4接觸）。借助調節機構，即可實現托盤2與冷卻盤4之間的垂直距離的調節。In one embodiment, the vertical distance between the tray 2 and the cooling tray 4 can be defined as height H 1 , height H 2 , height H 3 , and height H 4 , where the height H 1 is 4 mm and the height H 2 is 2 mm, height H 3 is 1 mm, height H 4 is 0 mm (that is, tray 2 is in contact with cooling plate 4). With the help of the adjustment mechanism, the vertical distance between the tray 2 and the cooling tray 4 can be adjusted.

本實施例中，冷卻腔室還包括測溫裝置，該測溫裝置用於檢測位於腔室本體1內的托盤2的溫度。借助測溫裝置，可以對托盤溫度進行即時監控，從而不僅可以避免托盤2和晶圓因冷卻不充分而影響工藝結果，甚至產生人身安全風險，而且還可以避免托盤2因冷卻速率過快而發生碎盤。In this embodiment, the cooling chamber further includes a temperature measuring device, which is used to detect the temperature of the tray 2 in the chamber body 1. With the help of a temperature measuring device, the tray temperature can be monitored in real time, which not only prevents tray 2 and wafers from affecting the process results due to insufficient cooling, and even personal safety risks, but also avoids tray 2 from occurring due to excessive cooling rate Shredded disk.

測溫裝置可以有多種，例如為紅外測溫裝置等的非接觸式溫度測量裝置。紅外測溫裝置的測溫探頭可藉由設置在腔室本體1的上壁的通孔引入到腔室本體1內部，以採集托盤2的溫度。There are many types of temperature measuring devices, such as non-contact temperature measuring devices such as infrared temperature measuring devices. The temperature measuring probe of the infrared temperature measuring device can be introduced into the chamber body 1 through a through hole provided on the upper wall of the chamber body 1 to collect the temperature of the tray 2.

為了檢測托盤在徑向上的溫度均勻性，測溫裝置的數量為多個，且沿腔室本體1的徑向間隔分佈，用以分別檢測托盤2的徑向上不同位置的托盤溫度。例如，如圖2B所示，測溫裝置的數量可以為三個，且該測溫裝置的數量為紅外測溫裝置。三個紅外測溫裝置的測溫探頭61/62/63分別用於檢測托盤2外邊緣、托盤2半徑中點和托盤2中心的位置相對應的托盤溫度。這樣設置，可以較好地反映出托盤2徑向上的溫度均勻性。In order to detect the temperature uniformity of the tray in the radial direction, the number of temperature measuring devices is multiple, and they are distributed along the radial interval of the chamber body 1 to detect the tray temperature at different positions in the radial direction of the tray 2 respectively. For example, as shown in FIG. 2B, the number of temperature measuring devices may be three, and the number of temperature measuring devices is infrared temperature measuring devices. The temperature measuring probes 61/62/63 of the three infrared temperature measuring devices are respectively used to detect the tray temperature corresponding to the outer edge of the tray 2, the midpoint of the radius of the tray 2 and the position of the center of the tray 2. This arrangement can better reflect the temperature uniformity of the tray 2 in the radial direction.

在一個實施例中，冷卻腔室還包括勻氣環5，該勻氣環5設置在腔室本體1內，且位於冷卻盤4的下方，並且在勻氣環5中設置有用於向腔室本體1引入冷卻氣體的冷卻氣體通道，用於與冷卻盤4共同對托盤2進行冷卻。當然，在實際應用中，根據冷卻腔室的具體結構，勻氣環5也可以設置在冷卻盤4的上方或者周圍，例如，若冷卻盤4位於靠近腔室本體1頂部的位置處，勻氣環5也可以設置在冷卻盤4的上方。In one embodiment, the cooling chamber further includes a gas uniform ring 5, the gas uniform ring 5 is arranged in the chamber body 1, and is located below the cooling plate 4, and the uniform gas ring 5 is provided to the chamber The main body 1 introduces a cooling gas channel for cooling gas, and is used to cool the tray 2 together with the cooling plate 4. Of course, in practical applications, according to the specific structure of the cooling chamber, the gas uniforming ring 5 may also be arranged above or around the cooling plate 4, for example, if the cooling plate 4 is located near the top of the chamber body 1, the uniform gas The ring 5 may also be arranged above the cooling plate 4.

可選的，勻氣環5具有一個進氣口51和多個出氣口52，其中，多個出氣口52沿勻氣環5的周向均勻分佈，以能夠均勻地向腔室本體1內充入冷卻氣體。在實際應用中，可以根據具體需要設定出氣口52的數量，以能夠獲得合適的出氣口分佈密度。例如，出氣口52為72個，相鄰的兩個出氣口52之間的中心夾角為5°，這樣的出氣口分佈密度，可以滿足對冷卻速率和冷卻均勻性的要求。Optionally, the air homogenizing ring 5 has an air inlet 51 and a plurality of air outlets 52, wherein the plurality of air outlets 52 are evenly distributed along the circumferential direction of the air homogenizing ring 5 so as to be able to uniformly fill the chamber body 1 Into the cooling gas. In practical applications, the number of air outlets 52 can be set according to specific needs, so as to obtain a suitable air outlet distribution density. For example, there are 72 air outlets 52, and the center angle between two adjacent air outlets 52 is 5°. Such an air outlet distribution density can meet the requirements for cooling rate and cooling uniformity.

並且，各出氣口52的出氣方向均朝向腔室本體1的軸線傾斜預設角度θ，即，各出氣口52的出氣方向向內傾斜，且與水平面之間形成夾角，可選的，該角度θ可以為45度、60度等。In addition, the outlet direction of each outlet 52 is inclined toward the axis of the chamber body 1 by a predetermined angle θ, that is, the outlet direction of each outlet 52 is inclined inward and forms an angle with the horizontal plane. Optionally, the angle θ can be 45 degrees, 60 degrees, and so on.

下面採用上述勻氣環5和單一進氣口分別對托盤進行冷卻處理，並對冷卻處理後的溫度均勻性進行對比。具體地，上述勻氣環5的出氣口數量為72個，且相鄰的兩個出氣口52之間的中心夾角為5度，並且各出氣口52的出氣方向均朝向腔室本體1的軸線傾斜的角度θ為45°。在進行冷卻處理的過程中，利用三個紅外測溫裝置的測溫探頭61/62/63分別檢測托盤2外邊緣、托盤2半徑中點和托盤2中心的位置相對應的托盤溫度，並計算溫度平均值，該溫度平均值等於（最大值-最小值）/2。The following uses the above-mentioned uniform gas ring 5 and a single air inlet to cool the tray respectively, and compare the temperature uniformity after the cooling treatment. Specifically, the number of air outlets of the above-mentioned uniform gas ring 5 is 72, and the center angle between two adjacent air outlets 52 is 5 degrees, and the air outlet direction of each air outlet 52 faces the axis of the chamber body 1 The angle of inclination θ is 45°. During the cooling process, the temperature probes 61/62/63 of the three infrared temperature measuring devices are used to detect the tray temperature corresponding to the outer edge of the tray 2, the midpoint of the radius of the tray 2 and the center of the tray 2, and calculate The temperature average value is equal to (maximum-minimum)/2.

所得結果由下述表1所示，藉由對比可以看出，採用單一進氣口51對應的溫度均勻性的最大值為6.3%，最小值為5.5%，而採用勻氣環5對應的溫度均勻性的最大值為2.4%，最小值為2.1%。由此，借助勻氣環5，可以有效提高溫度均勻性。The results obtained are shown in Table 1 below. By comparison, it can be seen that the maximum temperature uniformity corresponding to a single air inlet 51 is 6.3% and the minimum value is 5.5%, while the temperature uniformity corresponding to the uniform gas ring 5 The maximum value of uniformity is 2.4%, and the minimum value is 2.1%. Therefore, with the help of the uniform gas ring 5, the temperature uniformity can be effectively improved.

表1，採用上述勻氣環5和單一進氣口51分別對托盤2進行冷卻處理的溫度均勻性對比表。 平均溫度 400℃ 250℃ 100℃ 50℃ 溫度平均值 單一進氣口 49.5℃ 28.0℃ 11.0℃ 6.3℃ 勻氣環 18.4℃ 10.6℃ 4.2℃ 2.4℃ 溫度均勻性 單一進氣口 6.2% 5.6% 5.5% 6.3% 勻氣環 2.3% 2.1% 2.1% 2.4% Table 1 is a comparison table of the temperature uniformity of the cooling treatment of the tray 2 using the above-mentioned uniform gas ring 5 and the single air inlet 51 respectively. average temperature 400°C 250°C 100℃ 50℃ Temperature average Single inlet 49.5°C 28.0°C 11.0℃ 6.3℃ Even gas ring 18.4°C 10.6℃ 4.2℃ 2.4℃ Temperature uniformity Single inlet 6.2% 5.6% 5.5% 6.3% Even gas ring 2.3% 2.1% 2.1% 2.4%

綜上所述，本創作實施例提供的冷卻腔室，其藉由利用調節機構調節托盤2與冷卻盤4之間的垂直距離，可以隨著冷卻時間的累積，根據托盤2的溫度變化調節該垂直距離，以避免因托盤2在高溫時距離冷卻盤4過近而導致降溫速率過快，發生碎盤，同時還能夠在托盤溫度下降至一定程度時藉由減小托盤2與冷卻盤4之間的垂直距離來提高冷卻效率，從而可以同時滿足對冷卻時間和冷卻溫度的要求。另外，上述調節機構採用以腔室本體的軸線為中心線的軸對稱結構，可以提高對托盤2和晶圓冷卻均勻性，進而可以提高托盤2和晶圓的溫度均勻性，保證工藝結果的穩定性和一致性。In summary, the cooling chamber provided by this creative embodiment uses an adjusting mechanism to adjust the vertical distance between the tray 2 and the cooling plate 4, which can be adjusted according to the temperature change of the tray 2 as the cooling time accumulates. Vertical distance to avoid too fast cooling rate due to the tray 2 being too close to the cooling plate 4 at high temperature, and the occurrence of disk shattering. At the same time, it can also reduce the difference between the tray 2 and the cooling plate 4 when the tray temperature drops to a certain extent. The vertical distance between the two can improve the cooling efficiency, so as to meet the requirements for cooling time and cooling temperature. In addition, the above adjustment mechanism adopts an axisymmetric structure with the axis of the chamber body as the center line, which can improve the uniformity of cooling of the tray 2 and the wafer, thereby improving the temperature uniformity of the tray 2 and the wafer, and ensuring the stability of the process result Sex and consistency.

作為另一個技術方案，本創作實施例還提供一種物理氣相沉積設備，其採用了本創作實施例提供的上述冷卻腔室。As another technical solution, this creative embodiment also provides a physical vapor deposition device that uses the aforementioned cooling chamber provided by this creative embodiment.

物理氣相沉積設備例如可以應用於AlN緩衝層的製備等等。The physical vapor deposition equipment can be applied to the preparation of an AlN buffer layer and so on.

本創作實施例提供的物理氣相沉積設備，其採用本創作實施例提供的上述冷卻腔室，不僅可以避免發生碎盤，而且還可以同時滿足對冷卻時間和冷卻溫度的要求，另外還可以提高托盤和晶圓的溫度均勻性，從而保證工藝結果的穩定性和一致性。The physical vapor deposition equipment provided by this creative embodiment adopts the above-mentioned cooling chamber provided by this creative embodiment, which can not only avoid the occurrence of shattering, but also meet the requirements for cooling time and cooling temperature at the same time, and can also improve The temperature uniformity of the tray and the wafer ensures the stability and consistency of the process results.

作為另一個技術方案，如圖3所示，本創作實施例還提供一種冷卻方法，其採用本創作實施例提供的上述冷卻腔室對托盤進行冷卻處理。該冷卻方法包括以下步驟：As another technical solution, as shown in FIG. 3, this creative embodiment also provides a cooling method, which uses the aforementioned cooling chamber provided by this creative embodiment to cool the tray. The cooling method includes the following steps:

步驟301：依次進行多個冷卻階段，以對托盤進行冷卻；Step 301: Perform multiple cooling stages in sequence to cool the tray;

在依次進行多個冷卻階段的過程中，藉由調節各冷卻階段的冷卻時間及托盤與冷卻盤之間的垂直距離，來避免發生碎盤，以使冷卻效率和冷卻後的托盤溫度滿足要求。In the process of performing multiple cooling stages in sequence, the cooling time of each cooling stage and the vertical distance between the tray and the cooling plate are adjusted to avoid disk shattering, so that the cooling efficiency and the cooled tray temperature meet the requirements.

在實際應用中，可以將整個冷卻時間劃分為相等或不等的多個時間段，各時間段稱為冷卻階段。In practical applications, the entire cooling time can be divided into equal or unequal time periods, and each time period is called a cooling phase.

可選的，在依次進行多個冷卻階段的過程中，托盤與冷卻盤之間的垂直距離逐漸減小。由於在整個冷卻過程中，隨著冷卻時間的累積，托盤的溫度由高至低，基於此，藉由調節托盤與冷卻盤之間的垂直距離，使之逐個階段逐漸減小，可以避免因托盤在高溫時距離冷卻盤過近而導致降溫速率過快，發生碎盤，同時還能夠在托盤溫度下降至一定程度時藉由減小托盤與冷卻盤之間的垂直距離來提高冷卻效率，從而可以同時滿足對冷卻時間和冷卻溫度的要求。Optionally, in the process of successively performing multiple cooling stages, the vertical distance between the tray and the cooling plate gradually decreases. In the whole cooling process, as the cooling time accumulates, the temperature of the tray changes from high to low. Based on this, by adjusting the vertical distance between the tray and the cooling tray to gradually reduce it step by step, it can avoid the tray When the temperature is too close to the cooling plate, the cooling rate is too fast and the plate is broken. At the same time, the cooling efficiency can be improved by reducing the vertical distance between the tray and the cooling plate when the temperature of the tray drops to a certain extent. At the same time meet the requirements for cooling time and cooling temperature.

例如，冷卻階段為四個，分別為第一階段、第二階段、第三階段和第四階段，四個冷卻階段的冷卻時間、托盤與冷卻盤之間的垂直距離以及氣體壓力的參數表如下述表2所示。For example, there are four cooling stages, namely the first stage, the second stage, the third stage and the fourth stage. The parameters of the cooling time, the vertical distance between the tray and the cooling plate and the gas pressure of the four cooling stages are as follows Described in Table 2.

表2，為四個冷卻階段的冷卻時間、托盤與冷卻盤之間的垂直距離以及氣體壓力的參數表。 冷卻階段的參數 第一階段 第二階段 第三階段 第四階段 冷卻時間 T1 T2 T3 T4 垂直距離 4公釐 2公釐 1公釐 0公釐 氣體壓力 P P P P Table 2 is the parameter table of the cooling time of the four cooling stages, the vertical distance between the tray and the cooling plate, and the gas pressure. Parameters of the cooling phase The first stage second stage The third phase Fourth stage Cooling time T1 T2 T3 T4 vertical distance 4 mm 2mm 1 mm 0 mm gas pressure P P P P

在表2中，第一階段對應的垂直距離為4公釐，且冷卻時間T1為1.3分鐘至1.9分鐘；第二階段對應的垂直距離為2公釐，且冷卻時間T2為1.1分鐘至1.4分鐘；第三階段對應的垂直距離為1公釐，且冷卻時間T3為1.1分鐘至1.4分鐘；第四階段對應的垂直距離為0公釐，且冷卻時間T4為2.4分鐘至2.6分鐘。腔室本體中的氣體壓力P均為10托(Torr)至50托。In Table 2, the vertical distance corresponding to the first stage is 4 mm, and the cooling time T1 is 1.3 minutes to 1.9 minutes; the vertical distance corresponding to the second stage is 2 mm, and the cooling time T2 is 1.1 minutes to 1.4 minutes ; The vertical distance corresponding to the third stage is 1 mm, and the cooling time T3 is 1.1 minutes to 1.4 minutes; the vertical distance corresponding to the fourth stage is 0 mm, and the cooling time T4 is 2.4 minutes to 2.6 minutes. The gas pressure P in the chamber body is 10 Torr to 50 Torr.

藉由將冷卻階段分為四個，且調節各冷卻階段的冷卻時間以及托盤與冷卻盤之間的垂直距離，可以在實現安全不碎盤的前提下，將托盤降溫至60℃以下；同時，四個冷卻階段的總冷卻時間控制在10分鐘n以內，由此可以同時滿足對冷卻時間和冷卻溫度的要求。By dividing the cooling stages into four, and adjusting the cooling time of each cooling stage and the vertical distance between the tray and the cooling tray, the tray can be cooled to below 60°C without breaking the tray; at the same time, The total cooling time of the four cooling stages is controlled within 10 minutes n, which can simultaneously meet the requirements for cooling time and cooling temperature.

在一個實施例中，圖4為本創作實施例提供的冷卻方法的一個實施例的流程示意圖。如圖4所示，本創作實施例提供的冷卻方法，其採用本創作實施例提供的冷卻腔室對托盤進行冷卻處理。該冷卻腔室的具體結構如圖2A和圖2B所示，其中，冷卻腔室還包括測溫裝置，該測溫裝置用於檢測位於腔室本體1內的托盤2的溫度。In an embodiment, FIG. 4 is a schematic flowchart of an embodiment of the cooling method provided by the creative embodiment. As shown in Fig. 4, the cooling method provided in this creative embodiment uses the cooling chamber provided in this creative embodiment to cool the tray. The specific structure of the cooling chamber is shown in FIGS. 2A and 2B. The cooling chamber further includes a temperature measuring device for detecting the temperature of the tray 2 located in the chamber body 1.

本創作實施例提供的冷卻方法還包括以下步驟：The cooling method provided in this creative embodiment further includes the following steps:

步驟401：檢測當前冷卻階段結束後的托盤溫度T。Step 401: Detect the tray temperature T after the current cooling phase ends.

若測溫裝置為多個，則在獲得各測溫裝置檢測的托盤溫度T之後，計算多個測溫裝置檢測的托盤溫度T的平均溫度值。If there are multiple temperature measuring devices, after obtaining the tray temperature T detected by each temperature measuring device, the average temperature value of the tray temperature T detected by the multiple temperature measuring devices is calculated.

步驟402：判斷當前冷卻階段結束後的托盤溫度T是否低於預設標準溫度T0；如果是，則進行步驟403；如果否，則進行步驟404；Step 402: Determine whether the tray temperature T after the current cooling phase ends is lower than the preset standard temperature T0; if yes, go to step 403; if not, go to step 404;

步驟403：進行下一冷卻階段；Step 403: proceed to the next cooling stage;

步驟404：繼續冷卻預設的一補充冷卻時間，並重新檢測托盤溫度T，然後判斷重新檢測的托盤溫度T是否低於預設標準溫度T0 ；如果是，則進行上述步驟403；如果否，則進行步驟405；Step 404: Continue to cool for a preset additional cooling time, and re-detect the tray temperature T, and then determine whether the re-detected tray temperature T is lower than the preset standard temperature T 0 ; if yes, proceed to the above step 403; if not, Go to step 405;

步驟405：終止冷卻處理。Step 405: Terminate the cooling process.

可選的，上述預設的補充冷卻時間時長為1分鐘。Optionally, the aforementioned preset supplemental cooling time duration is 1 minute.

利用上述步驟401至步驟405，在進行冷卻處理時，可以藉由軟體實現各相鄰的冷卻階段之間的溫度安全性互鎖流程，即，只有在托盤溫度T下降至預設的標準溫度以下，才能夠進行下一冷卻階段，從而可以避免在進行下一冷卻階段時，因托盤溫度T過高，托盤與冷卻盤之間的垂直距離減小，而發生碎盤。Using the above steps 401 to 405, during the cooling process, the temperature safety interlocking process between adjacent cooling stages can be realized by software, that is, only when the tray temperature T drops below the preset standard temperature , The next cooling stage can be carried out, so that when the next cooling stage is carried out, because the tray temperature T is too high, the vertical distance between the tray and the cooling tray is reduced, and the occurrence of disk shattering can be avoided.

可選的，在當前冷卻階段結束之後，且進行下一冷卻步驟之前，判斷是否進行各相鄰的冷卻階段之間的溫度安全性互鎖，即，是否執行上述步驟401至步驟405。Optionally, after the current cooling phase ends and before the next cooling step is performed, it is determined whether to perform temperature safety interlocking between adjacent cooling phases, that is, whether to perform the above steps 401 to 405.

圖5為本創作實施例提供的冷卻方法的一個實施例的流程示意圖。如圖5所示，本創作實施例提供的冷卻方法，其採用本創作實施例提供的冷卻腔室對托盤進行冷卻處理。該冷卻腔室的具體結構如圖2A和圖2B所示，其中，冷卻腔室還包括多個測溫裝置，且沿腔室本體1的徑向間隔分佈，用以分別檢測托盤2的徑向上不同位置的托盤溫度。FIG. 5 is a schematic flowchart of an embodiment of the cooling method provided by the creative embodiment. As shown in Fig. 5, the cooling method provided in this creative embodiment uses the cooling chamber provided in this creative embodiment to cool the tray. The specific structure of the cooling chamber is shown in Figures 2A and 2B. The cooling chamber also includes a plurality of temperature measuring devices, which are distributed along the radial interval of the chamber body 1 to detect the radial direction of the tray 2 respectively. Tray temperature at different positions.

本創作實施例提供的冷卻方法還包括以下步驟：The cooling method provided in this creative embodiment further includes the following steps:

步驟501：多個溫度採集時段，各溫度採集時段中持續對托盤溫度進行檢測並記錄；Step 501: In multiple temperature collection periods, the tray temperature is continuously detected and recorded during each temperature collection period;

步驟502：根據各溫度採集時段採集到的多個托盤溫度，計算獲得各溫度採集時段的降溫速率S；Step 502: According to the multiple tray temperatures collected in each temperature collection period, calculate and obtain the temperature drop rate S in each temperature collection period;

步驟503：判斷降溫速率S是否小於安全速率S0 ；如果是，則進行步驟504；如果否，則進行步驟505；Step 503: Judge whether the cooling rate S is less than the safe rate S 0 ; if yes, proceed to step 504; if not, proceed to step 505;

步驟504：繼續進行冷卻處理；Step 504: continue the cooling process;

步驟505：終止冷卻處理並增加托盤與冷卻盤之間的距離，並停止向腔室本體1通入冷卻氣體。Step 505: Terminate the cooling process, increase the distance between the tray and the cooling plate, and stop passing cooling gas to the chamber body 1.

上述溫度採集時段即為溫度採集週期，各週期為5秒。The aforementioned temperature collection period is the temperature collection period, and each period is 5 seconds.

利用上述步驟501至步驟505，在進行冷卻處理時，可以藉由軟體實現冷卻速率的安全性互鎖，即，若降溫速率S過大，則立即終止冷卻處理，以避免發生碎盤。Using the above steps 501 to 505, during the cooling process, the safety interlocking of the cooling rate can be realized by software, that is, if the cooling rate S is too large, the cooling process is immediately terminated to avoid the occurrence of disk shattering.

可選的，在進行上述步驟501之前，還包括：Optionally, before performing step 501, the method further includes:

判斷是否進行冷卻速率的安全性互鎖流程，即，是否執行上述步驟501至步驟505。It is judged whether to perform the safety interlocking process of the cooling rate, that is, whether to perform the above steps 501 to 505.

圖6為本創作實施例提供的冷卻方法的一個實施例的流程示意圖。如圖6所示，本創作實施例提供的冷卻方法，其採用本創作實施例提供的冷卻腔室對托盤進行冷卻處理。該冷卻腔室的具體結構如圖2A和圖2B所示，其中，冷卻腔室還包括多個測溫裝置，且沿腔室本體1的徑向間隔分佈，用以分別檢測托盤2的徑向上不同位置的托盤溫度。Fig. 6 is a schematic flowchart of an embodiment of the cooling method provided by the creative embodiment. As shown in Fig. 6, the cooling method provided by this creative embodiment uses the cooling chamber provided by this creative embodiment to cool the tray. The specific structure of the cooling chamber is shown in Figures 2A and 2B. The cooling chamber also includes a plurality of temperature measuring devices, which are distributed along the radial interval of the chamber body 1 to detect the radial direction of the tray 2 respectively. Tray temperature at different positions.

本創作實施例提供的冷卻方法還包括以下步驟：The cooling method provided in this creative embodiment further includes the following steps:

步驟601：在進行冷卻處理的整個過程中，持續檢測托盤的徑向上不同位置的多個托盤溫度；Step 601: During the entire cooling process, continuously detect the temperature of multiple trays at different positions in the radial direction of the tray;

步驟602：基於多個托盤溫度計算溫度平均值U；其中，該溫度平均值等於多個托盤溫度中的最大值與多個托盤溫度中的最小值的差值的二分之一；Step 602: Calculate an average temperature U based on the temperatures of the multiple trays; where the average temperature is equal to one half of the difference between the maximum value of the multiple tray temperatures and the minimum value of the multiple tray temperatures;

步驟603：判斷溫度平均值U是否小於溫度平均安全值U0 ；如果是，則進行步驟604；如果否，則進行步驟605；Step 603: Judge whether the temperature average U is less than the temperature average safety value U 0 ; if yes, go to step 604; if not, go to step 605;

步驟604：繼續進行冷卻處理；Step 604: continue the cooling process;

步驟605：終止冷卻處理並增加托盤與冷卻盤之間的距離，並停止向腔室本體通入冷卻氣體。Step 605: Terminate the cooling process, increase the distance between the tray and the cooling plate, and stop passing cooling gas to the chamber body.

利用上述步驟601至步驟605，在進行冷卻處理時，可以藉由軟體實現溫度均勻性的安全性互鎖，即，若溫度平均值過大，則立即終止冷卻處理，以避免溫度均勻性無法滿足要求。Using the above steps 601 to 605, during the cooling process, the safety interlock of temperature uniformity can be realized by software, that is, if the average temperature is too large, the cooling process will be immediately terminated to avoid the temperature uniformity from not meeting the requirements .

可選的，在進行上述步驟601之前，還包括：Optionally, before performing step 601, the method further includes:

判斷是否進行溫度均勻性的安全性互鎖流程，即，是否執行上述步驟601至步驟605。It is judged whether to perform the safety interlocking process of temperature uniformity, that is, whether to perform the above steps 601 to 605.

需要說明的是，在實際應用中，在進行上述步驟301的過程中，可以根據具體需要選擇是否進行上述多個安全性互鎖流程中的至少一個。It should be noted that, in actual applications, in the process of performing the foregoing step 301, it is possible to select whether to perform at least one of the foregoing multiple security interlocking procedures according to specific needs.

綜上所述，本創作實施例提供的冷卻方法，其藉由採用本創作實施例提供的上述冷卻腔室對托盤進行冷卻處理，不僅可以避免發生碎盤，而且還可以同時滿足對冷卻時間和冷卻溫度的要求，另外還可以提高托盤和晶圓的溫度均勻性，從而保證工藝結果的穩定性和一致性。In summary, the cooling method provided by this creative embodiment uses the above-mentioned cooling chamber provided by this creative embodiment to cool the tray, which can not only avoid the occurrence of broken disks, but also meet the requirements of cooling time and cooling time. The cooling temperature requirement can also improve the temperature uniformity of the tray and the wafer, thereby ensuring the stability and consistency of the process results.

上述本創作所公開的任一技術方案除另有聲明外，如果其公開了數值範圍，那麼公開的數值範圍均為優選的數值範圍，任何本領域的技術人員應該理解：優選的數值範圍僅僅是諸多可實施的數值中技術效果比較明顯或具有代表性的數值。由於數值較多，無法窮舉，所以本創作才公開部分數值以舉例說明本創作的技術方案，並且，上述列舉的數值不應構成對本創作創造保護範圍的限制。Unless otherwise stated, if any of the technical solutions disclosed in the present creation above discloses a numerical range, then the disclosed numerical range is a preferred numerical range. Any person skilled in the art should understand that the preferred numerical range is only Among the many feasible values, the technical effect is obvious or representative value. Due to the large number of values that cannot be exhaustively listed, this creation only discloses some of the values to illustrate the technical solutions of this creation, and the above-listed values should not constitute a limitation on the protection scope of this creation.

同時，上述本創作如果公開或涉及了互相固定連接的零部件或結構件，那麼，除另有聲明外，固定連接可以理解為：能夠拆卸地固定連接（例如使用螺栓或螺釘連接），也可以理解為：不可拆卸的固定連接（例如鉚接、焊接），當然，互相固定連接也可以為一體式結構（例如使用鑄造工藝一體成形製造出來）所取代（明顯無法採用一體成形工藝除外）。At the same time, if the above creation discloses or involves parts or structures that are fixedly connected to each other, unless otherwise stated, fixed connection can be understood as a fixed connection that can be detached (for example, connected by bolts or screws), or It is understood as: non-detachable fixed connection (such as riveting, welding). Of course, the mutual fixed connection can also be replaced by an integrated structure (for example, manufactured by a casting process) (except obviously that the integrated forming process cannot be used).

另外，上述本創作公開的任一技術方案中所應用的用於表示位置關係或形狀的術語除另有聲明外其含義包括與其近似、類似或接近的狀態或形狀。本創作提供的任一部件既可以是由多個單獨的組成部分組裝而成，也可以為一體成形工藝製造出來的單獨部件。In addition, unless otherwise stated, the terms used in any of the technical solutions disclosed in the present invention to indicate a positional relationship or shape include a state or shape similar to, similar to, or close to it, unless otherwise stated. Any component provided in this creation can be assembled from multiple separate components, or can be a single component manufactured by an integrated forming process.

以上實施例僅用以說明本創作的技術方案而非對其限制；儘管參照較佳實施例對本創作進行了詳細的說明，所屬領域的普通技術人員應當理解：依然可以對本創作的具體實施方式進行修改或者對部分技術特徵進行等同替換；而不脫離本創作技術方案的精神，其均應涵蓋在本創作請求保護的技術方案範圍當中。The above embodiments are only used to illustrate the technical solutions of this creation, not to limit it; although the creation has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that the specific implementation of this creation can still be implemented Modification or equivalent replacement of some technical features; without departing from the spirit of this creative technical solution, all of them should be covered in the scope of the technical solution claimed by this creative.

本創作的描述是為了示例和描述起見而給出的，而並不是無遺漏的或者將本創作限於所公開的形式。很多修改和變化對於本領域的普通技術人員而言是顯然的。選擇和描述實施例是為了更好說明本創作的原理和實際應用，並且使本領域的普通技術人員能夠理解本創作從而設計適於特定用途的帶有各種修改的各種實施例。The description of this creation is given for the sake of example and description, and is not exhaustive or restricts this creation to the disclosed form. Many modifications and changes are obvious to those of ordinary skill in the art. The embodiments are selected and described in order to better illustrate the principles and practical applications of the creation, and to enable those of ordinary skill in the art to understand the creation and design various embodiments with various modifications suitable for specific purposes.

1:腔室本體 2:托盤 3:升降托盤支架 31:支架本體 32:環形凸臺 33:支撐面 4:冷卻盤 41:進水口 42:出水口 5:勻氣環 51:進氣口 52:出氣口 61,62,63:測溫探頭 401~405,501~505,601~605:步驟 H1,H2,H3,H4:高度 T:托盤溫度 T0:標準溫度 S:降溫速率 S0:安全速率 U:溫度平均值 U0:溫度平均安全值 θ:角度1: Chamber body 2: Tray 3: Lifting tray bracket 31: Bracket body 32: Ring boss 33: Support surface 4: Cooling plate 41: Water inlet 42: Water outlet 5: Uniform air ring 51: Air inlet 52: Outlet 61, 62, 63: temperature probe 401~405, 501~505, 601~605: steps H 1 , H 2 , H 3 , H 4 : height T: tray temperature T 0 : standard temperature S: cooling rate S 0 : safe Speed U: Average temperature U 0 : Average safety value of temperature θ: Angle

圖1為現有技術的PVD設備製備AlN緩衝層的工藝流程圖； 圖2A為本創作實施例提供的冷卻腔室的側視剖面示意圖； 圖2B為本創作實施例提供的冷卻腔室的俯視剖面示意圖； 圖3為本創作實施例提供的冷卻方法的流程圖； 圖4為本創作實施例採用的溫度安全性互鎖的流程圖； 圖5為本創作實施例採用的冷卻速率的安全性互鎖的流程圖； 圖6為本創作實施例採用的溫度均勻性的安全性互鎖的流程圖。Figure 1 is a process flow diagram of the prior art PVD equipment for preparing an AlN buffer layer; Figure 2A is a schematic side sectional view of the cooling chamber provided by the creative embodiment; 2B is a schematic top sectional view of the cooling chamber provided by the creative embodiment; Figure 3 is a flowchart of the cooling method provided by the creative embodiment; Figure 4 is a flow chart of the temperature safety interlock used in the creative embodiment; Figure 5 is a flow chart of the safety interlocking of the cooling rate adopted by the creative embodiment; Fig. 6 is a flow chart of the safety interlock of temperature uniformity adopted in the creative embodiment.

1:腔室本體 1: Chamber body

2:托盤 2: tray

3:升降托盤支架 3: Lifting tray bracket

31:支架本體 31: Bracket body

32:環形凸臺 32: Ring boss

33:支撐面 33: Support surface

4:冷卻盤 4: Cooling plate

41:進水口 41: water inlet

42:出水口 42: water outlet

5:勻氣環 5: Homogeneous ring

51:進氣口 51: air inlet

52:出氣口 52: air outlet

61,62,63:測溫探頭 61, 62, 63: temperature probe

H1,H2,H3,H4:高度 H 1 , H 2 , H 3 , H 4 : height

θ:角度 θ: Angle

Claims (17)

一種冷卻腔室，其用於冷卻一能承載晶圓的托盤；該冷卻腔室包含： 一腔室本體； 一冷卻盤，其設置在該腔室本體內，並用於承載並冷卻該托盤及該托盤所承載的晶圓；以及 一調節機構，其設置在該腔室本體內，並用於調節該托盤與該冷卻盤之間的一垂直距離，且該調節機構採用以該腔室本體的軸線為中心線的軸對稱結構。A cooling chamber is used for cooling a tray capable of carrying wafers; the cooling chamber includes: A chamber body; A cooling tray, which is arranged in the chamber body and used to carry and cool the tray and the wafers carried by the tray; and An adjustment mechanism is arranged in the chamber body and used to adjust a vertical distance between the tray and the cooling plate, and the adjustment mechanism adopts an axisymmetric structure with the axis of the chamber body as the centerline. 如請求項1所述之冷卻腔室，其中，該調節機構包含： 一升降托盤支架，其包含： 一支撐面，其能夠支撐該托盤； 其中，該升降托盤支架被設置為能夠藉由帶動該托盤升降來調節該托盤與該冷卻盤之間的該垂直距離。The cooling chamber according to claim 1, wherein the adjustment mechanism includes: A lifting tray support, which includes: A supporting surface capable of supporting the tray; Wherein, the lifting tray support is configured to be able to adjust the vertical distance between the tray and the cooling tray by driving the tray to lift. 如請求項2所述之冷卻腔室，其中，該冷卻盤在該托盤被置於該支撐面上時位於該托盤的下方，且該升降托盤支架能夠藉由升降使該支撐面位於高於或低於該冷卻盤的位置，以實現將該托盤在該升降托盤支架與該冷卻盤之間傳遞。The cooling chamber according to claim 2, wherein the cooling tray is located below the tray when the tray is placed on the supporting surface, and the lifting tray bracket can lift the supporting surface above or It is lower than the position of the cooling tray to realize the transfer of the tray between the lifting tray support and the cooling tray. 如請求項3所述之冷卻腔室，其中，該升降托盤支架包含一支架本體和一環形凸臺，該環形凸臺設置在該支架本體上，該環形凸臺與該腔室本體同軸設置，且該環形凸臺的上表面為該支撐面，且該環形凸臺的內徑大於該冷卻盤的外徑。The cooling chamber according to claim 3, wherein the lifting tray bracket includes a bracket body and an annular boss, the annular boss is arranged on the bracket body, and the annular boss is arranged coaxially with the chamber body, And the upper surface of the annular boss is the supporting surface, and the inner diameter of the annular boss is larger than the outer diameter of the cooling plate. 如請求項1所述之冷卻腔室，其中，該冷卻腔室還包含至少一測溫裝置，該至少一測溫裝置用於檢測位於該腔室本體內的該托盤的溫度。The cooling chamber according to claim 1, wherein the cooling chamber further includes at least one temperature measuring device, and the at least one temperature measuring device is used to detect the temperature of the tray located in the chamber body. 如請求項5所述之冷卻腔室，其中，該至少一測溫裝置的數量為多個，且沿該腔室本體的徑向間隔分佈，用以分別檢測該托盤的徑向上不同位置的托盤溫度。The cooling chamber according to claim 5, wherein the number of the at least one temperature measuring device is multiple, and they are distributed along the radial interval of the chamber body, so as to respectively detect the trays at different positions in the radial direction of the tray temperature. 如請求項6所述之冷卻腔室，其中，該測溫裝置的數量為三個，分別用於檢測該托盤的中心、半徑中點、和外邊緣的位置相對應的托盤溫度。The cooling chamber according to claim 6, wherein the number of the temperature measuring devices is three, which are respectively used to detect the tray temperature corresponding to the position of the center, the midpoint of the radius, and the outer edge of the tray. 如請求項5至7中任一所述之冷卻腔室，其中，該測溫裝置包含一紅外測溫裝置。The cooling chamber according to any one of claims 5 to 7, wherein the temperature measuring device includes an infrared temperature measuring device. 如請求項1所述之冷卻腔室，其中，該冷卻腔室還包含一勻氣環，該勻氣環設置在該腔室本體內，且在該勻氣環具有一冷卻氣體通道，該冷卻氣體通道位於該勻氣環中，並用於向該腔室本體引入冷卻氣體。The cooling chamber according to claim 1, wherein the cooling chamber further comprises a homogenizing ring, the homogenizing ring is arranged in the chamber body, and the homogenizing ring has a cooling gas channel, the cooling The gas channel is located in the uniform gas ring and is used to introduce cooling gas into the chamber body. 如請求項9所述之冷卻腔室，其中，該冷卻氣體通道具有多個出氣口，該多個出氣口沿該勻氣環的周向均勻分佈；並且，各該出氣口的出氣方向均朝向該腔室本體的軸線傾斜一預設的角度。The cooling chamber according to claim 9, wherein the cooling gas passage has a plurality of air outlets, and the plurality of air outlets are evenly distributed along the circumferential direction of the uniform gas ring; and the air outlet direction of each air outlet is facing The axis of the chamber body is inclined at a predetermined angle. 一種物理氣相沉積設備，其包含如請求項1至10任一項所述的冷卻腔室。A physical vapor deposition equipment comprising the cooling chamber according to any one of claims 1 to 10. 一種冷卻方法，其採用如請求項1至10中任一項所述的冷卻腔室對一托盤進行冷卻處理，該冷卻方法包含： 依次進行的多個冷卻階段，以對該托盤進行冷卻； 在依次進行該多個冷卻階段的過程中，藉由調節各該等冷卻階段的冷卻時間及該托盤與該冷卻盤之間的該垂直距離，來避免該托盤碎盤，以使冷卻效率和冷卻後的托盤溫度滿足預設要求。A cooling method, which uses the cooling chamber according to any one of claims 1 to 10 to cool a tray, the cooling method comprising: Several cooling stages are carried out in sequence to cool the tray; In the process of performing the multiple cooling stages in sequence, by adjusting the cooling time of each cooling stage and the vertical distance between the tray and the cooling plate, the tray is prevented from shattering, so that the cooling efficiency and cooling The temperature of the rear tray meets the preset requirements. 如請求項12所述之冷卻方法，其中，在依次進行多個該冷卻階段的過程中，該垂直距離逐漸減小。The cooling method according to claim 12, wherein the vertical distance is gradually reduced in the process of sequentially performing a plurality of the cooling stages. 如請求項12或13所述之冷卻方法，其中，該等冷卻階段為四個，分別為第一階段、第二階段、第三階段和第四階段，其中， 該第一階段對應的該垂直距離為4公釐，且冷卻時間為1.3分鐘至1.9分鐘； 該第二階段對應的該垂直距離為2公釐，且冷卻時間為1.1分鐘至1.4分鐘； 該第三階段對應的該垂直距離為1公釐，且冷卻時間為1.1分鐘至1.4分鐘； 該第四階段對應的該垂直距離為0公釐，且冷卻時間為2.4分鐘至2.6分鐘。The cooling method according to claim 12 or 13, wherein there are four cooling stages, namely the first stage, the second stage, the third stage, and the fourth stage, wherein, The vertical distance corresponding to the first stage is 4 mm, and the cooling time is 1.3 minutes to 1.9 minutes; The vertical distance corresponding to the second stage is 2 mm, and the cooling time is 1.1 minutes to 1.4 minutes; The vertical distance corresponding to the third stage is 1 mm, and the cooling time is 1.1 minutes to 1.4 minutes; The vertical distance corresponding to the fourth stage is 0 mm, and the cooling time is 2.4 minutes to 2.6 minutes. 一種冷卻方法，其採用如請求項5至7中任一項所述的冷卻腔室對一托盤進行冷卻處理，該冷卻方法包含： 依次進行的多個冷卻階段，以對該托盤進行冷卻； 在依次進行該多個冷卻階段的過程中，藉由調節各該等冷卻階段的冷卻時間及該托盤與該冷卻盤之間的該垂直距離，來避免該托盤碎盤，以使冷卻效率和冷卻後的托盤溫度滿足預設要求； 檢測當前冷卻階段結束後的托盤溫度； 判斷當前冷卻階段結束後的托盤溫度是否低於一預設標準溫度； 如果是，則進行下一冷卻階段；如果否，則繼續冷卻一預設的補充冷卻時間，並重新檢測托盤溫度，然後判斷重新檢測的托盤溫度是否低於該預設標準溫度，如果是，則進行下一冷卻階段，如果否，則終止冷卻處理。A cooling method, which uses the cooling chamber according to any one of claims 5 to 7 to cool a tray, the cooling method comprising: Several cooling stages are carried out in sequence to cool the tray; In the process of performing the multiple cooling stages in sequence, by adjusting the cooling time of each cooling stage and the vertical distance between the tray and the cooling plate, the tray is prevented from shattering, so that the cooling efficiency and cooling The subsequent tray temperature meets the preset requirements; Detect the tray temperature after the current cooling phase ends; Determine whether the tray temperature after the current cooling phase is over is lower than a preset standard temperature; If yes, proceed to the next cooling stage; if not, continue to cool for a preset supplementary cooling time, and re-detect the tray temperature, and then determine whether the re-detected tray temperature is lower than the preset standard temperature, if yes, then Proceed to the next cooling stage, if not, terminate the cooling process. 一種冷卻方法，其採用如請求項5至8中任一項所述的冷卻腔室對一托盤進行冷卻處理，該冷卻方法包含： 依次進行的多個冷卻階段，以對該托盤進行冷卻； 在依次進行該多個冷卻階段的過程中，藉由調節各該等冷卻階段的冷卻時間及該托盤與該冷卻盤之間的該垂直距離，來避免該托盤碎盤，以使冷卻效率和冷卻後的托盤溫度滿足預設要求； 多個溫度採集時段，各該溫度採集時段中持續對托盤溫度進行檢測並記錄； 根據各該溫度採集時段採集到的多個托盤溫度，計算獲得各該溫度採集時段的一降溫速率； 判斷該降溫速率是否小於一安全速率； 如果是，則繼續進行冷卻處理；如果否，則終止冷卻處理並增加該托盤與該冷卻盤之間的距離，並停止向該腔室本體通入冷卻氣體。A cooling method, which uses the cooling chamber according to any one of claims 5 to 8 to perform cooling processing on a tray, the cooling method comprising: Several cooling stages are carried out in sequence to cool the tray; In the process of performing the multiple cooling stages in sequence, by adjusting the cooling time of each cooling stage and the vertical distance between the tray and the cooling plate, the tray is prevented from shattering, so that the cooling efficiency and cooling The subsequent tray temperature meets the preset requirements; Multiple temperature collection periods, in each temperature collection period, the tray temperature is continuously detected and recorded; According to the multiple tray temperatures collected in each temperature collection period, calculate and obtain a temperature drop rate for each temperature collection period; Determine whether the cooling rate is less than a safe rate; If yes, continue the cooling process; if not, terminate the cooling process and increase the distance between the tray and the cooling plate, and stop passing cooling gas to the chamber body. 一種冷卻方法，其採用如請求項7或8所述的冷卻腔室對一托盤進行冷卻處理，該冷卻方法還包含： 依次進行的多個冷卻階段，以對該托盤進行冷卻； 在依次進行該多個冷卻階段的過程中，藉由調節各該等冷卻階段的冷卻時間及該托盤與該冷卻盤之間的該垂直距離，來避免該托盤碎盤，以使冷卻效率和冷卻後的托盤溫度滿足預設要求； 在進行冷卻處理的整個過程中，持續檢測該托盤的徑向上不同位置的多個托盤溫度； 基於該多個托盤溫度計算溫度平均值；其中，該溫度平均值等於該多個托盤溫度中的最大值與該多個托盤溫度中的最小值的差值的二分之一； 判斷該溫度平均值是否小於該溫度平均安全值； 如果是，則繼續進行冷卻處理；如果否，則終止冷卻處理並增加該托盤與該冷卻盤之間的距離，並停止向該腔室本體通入冷卻氣體。A cooling method, which uses the cooling chamber as described in claim 7 or 8 to cool a tray, the cooling method further comprising: Several cooling stages are carried out in sequence to cool the tray; In the process of performing the multiple cooling stages in sequence, by adjusting the cooling time of each cooling stage and the vertical distance between the tray and the cooling plate, the tray is prevented from shattering, so that the cooling efficiency and cooling The subsequent tray temperature meets the preset requirements; During the entire cooling process, continuously detect the temperature of multiple trays at different positions in the radial direction of the tray; Calculating an average temperature based on the temperatures of the plurality of trays; wherein the average temperature is equal to one half of the difference between the maximum value of the plurality of tray temperatures and the minimum value of the plurality of tray temperatures; Judge whether the average value of the temperature is less than the average safety value of the temperature; If yes, continue the cooling process; if not, terminate the cooling process and increase the distance between the tray and the cooling plate, and stop passing cooling gas to the chamber body.
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