TW202040661A - Breaking method and breaking device of wafer characterized in that the high quality chips can be obtained by maintaining a wafer in a stable situation during breaking to reduce the formation of oblique breaks, nicks, etc. at the dicing surface - Google Patents

Breaking method and breaking device of wafer characterized in that the high quality chips can be obtained by maintaining a wafer in a stable situation during breaking to reduce the formation of oblique breaks, nicks, etc. at the dicing surface Download PDF

Info

Publication number
TW202040661A
TW202040661A TW109104168A TW109104168A TW202040661A TW 202040661 A TW202040661 A TW 202040661A TW 109104168 A TW109104168 A TW 109104168A TW 109104168 A TW109104168 A TW 109104168A TW 202040661 A TW202040661 A TW 202040661A
Authority
TW
Taiwan
Prior art keywords
wafer
tape
breaking
dicing
attached
Prior art date
Application number
TW109104168A
Other languages
Chinese (zh)
Other versions
TWI842825B (en
Inventor
田村健太
武田真和
市川克則
Original Assignee
日商三星鑽石工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商三星鑽石工業股份有限公司 filed Critical 日商三星鑽石工業股份有限公司
Publication of TW202040661A publication Critical patent/TW202040661A/en
Application granted granted Critical
Publication of TWI842825B publication Critical patent/TWI842825B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Abstract

The purpose of this invention is to provide a breaking method and a breaking device, which can obtain high quality chips by maintaining a wafer in a stable situation during breaking to reduce the formation of oblique breaks, nicks, etc. at the dicing surface. This invention is a breaking method for the wafer W with a single-sided substrate with lines S1 and S2, which are attached to a cutting tape 2 made of resin and having adhesive. Before the wafer W is broken, the coating tape 3 made of resin and having adhesive is attached to the opposite surface to the surface which the cutting tape is attached on the wafer, and the wafer W is clamped and fixed by the cover tape 3 and the cutting tape 2 from the top and bottom sides, and then the wafer W is warped by pressing the breaking bar 6 from the top of the scribing lines, so as to break the wafer along the scribing line.

Description

晶圓之裂斷方法及裂斷裝置Wafer cracking method and cracking device

本發明係關於一種包含玻璃或矽等之脆性材料之晶圓(亦稱為基板)之裂斷方法以及裂斷裝置。尤其，本發明係關於一種將玻璃或矽等脆性材料基板之表面或內部，組入有電子電路或電子零件之MEMS(Micro Electro Mechanical Systems：微電子機械系統)用之晶圓，沿其表面加工之劃線分斷而切出各個晶片(元件)的裂斷方法以及裂斷裝置。The present invention relates to a method and device for breaking a wafer (also called a substrate) containing brittle materials such as glass or silicon. In particular, the present invention relates to a wafer for MEMS (Micro Electro Mechanical Systems) in which electronic circuits or electronic parts are integrated into the surface or inside of a brittle material substrate such as glass or silicon, and processed along the surface. The scribing and breaking to cut out the breaking method and breaking device of each chip (component).

一般於自母基板之晶圓切出晶片之步驟中，首先，於晶圓之表面使用切割輪或雷射，形成相互正交之X方向以及Y方向之劃線(沿基板厚度方向滲透之裂紋)。隨後，藉由自劃線之相反側之面抵住裂斷桿使晶圓撓曲，而分斷為方形或矩形狀之晶片(單位製品)(參照專利文獻1)。Generally, in the step of cutting out the chip from the wafer of the mother substrate, first, a cutting wheel or laser is used on the surface of the wafer to form scribe lines in the X and Y directions orthogonal to each other (cracks penetrating along the thickness of the substrate) ). Subsequently, the wafer is flexed by the surface opposite to the scribe line against the rupture bar, and the wafer (unit product) is broken into a square or rectangular shape (refer to Patent Document 1).

多數情況下，待裂斷之晶圓如圖1所示，貼付固定於由環狀之切割框架1保持之具有黏著性之樹脂製之切割膠帶2。於晶圓W之上表面以先行之劃線步驟加工相互正交之X方向(縱向)劃線S1以及Y方向(橫向)劃線S2。In most cases, the wafer to be cracked is shown in Fig. 1 and is attached and fixed to a dicing tape 2 made of adhesive resin held by a ring-shaped dicing frame 1. The X-direction (longitudinal) scribing line S1 and the Y-direction (horizontal) scribing line S2 orthogonal to each other are processed by the preceding scribing step on the upper surface of the wafer W.

裂斷時，為不傷及晶圓之開放之上表面，而以由薄樹脂製之保護膜(專利文獻1中之保護片材(8))覆蓋之狀態，使晶圓W反轉，以劃線S1位於設置於作業載台之中間之左右一對之承托刃間之方式，載置於作業載台上。 如此，藉由自上方將裂斷桿朝劃線S1按壓，而使基板W因3點支持彎曲方式於左右承托刃之間撓曲，且先沿X方向之劃線S1裂斷並分斷成長條狀之基板，接著，藉由同樣之方法，沿Y方向之劃線S2裂斷且分斷成方形或矩形狀之晶片。 [先前技術文獻] [專利文獻]In order not to damage the open upper surface of the wafer when cracked, the wafer W is reversed in a state covered with a thin resin protective film (protective sheet (8) in Patent Document 1) The marking S1 is located between the left and right pair of supporting blades arranged in the middle of the work platform and placed on the work platform. In this way, by pressing the breaking rod from above toward the scribe line S1, the substrate W is bent between the left and right supporting blades due to the 3-point support bending method, and the substrate W is first cracked and broken along the scribe line S1 in the X direction The long strip substrate is then, by the same method, the scribe line S2 along the Y direction is broken and broken into square or rectangular chips. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開2016-68393號公報[Patent Document 1] Japanese Patent Laid-Open No. 2016-68393

[發明所欲解決之問題] 然而，於先前之方法中，晶圓W貼付固定於具有黏著性之切割膠帶2，但保護膜僅以面接觸覆蓋，且為極薄之膜(一般為20～30 μm)，故裂斷時之基板保持不穩定，而時長產生分斷面之一部分傾斜之「斜裂」、或邊緣部缺失之「缺口」等之不良。尤其，將晶圓W沿X方向劃線S1分斷成長條狀後，於Y方向之劃線S2進行裂斷時，由於長條狀之晶圓(長條狀基板)之沿X方向之左右兩邊已被切離，故極其不穩定，因此，存在上述「斜裂」或「缺口」多發而商品品質顯著劣化之問題點。[The problem to be solved by the invention] However, in the previous method, the wafer W is attached and fixed to the adhesive dicing tape 2, but the protective film is only covered by surface contact and is a very thin film (usually 20-30 μm), so when it is broken The substrate remains unstable, and the length of time produces defects such as "oblique cracks" where part of the section is inclined, or "notches" where the edges are missing. In particular, after the wafer W is broken along the X-direction scribe line S1 into a long strip, when the wafer W is broken along the Y-direction scribe line S2, the long wafer (long substrate) is left and right along the X direction. The two sides have been cut apart, so it is extremely unstable. Therefore, there is a problem that the above-mentioned "oblique cracks" or "nicks" frequently occur and the product quality is significantly degraded.

因此，本發明之目的在於提供一種裂斷時，可以穩定之狀態保持晶圓減少產生分斷面中之「斜裂」或「缺口」等，而獲得高品質之晶片的裂斷方法以及裂斷裝置。 [解決問題之技術手段]Therefore, the object of the present invention is to provide a cracking method and cracking method that can maintain the wafer in a stable state and reduce the occurrence of "oblique cracks" or "nicks" in the fractured section during cracking, and obtain high-quality wafers. Device. [Technical means to solve the problem]

為達成上述目的，本發明中謀求如下之技術機構。即，本發明之裂斷方法係將單面加工有劃線之晶圓貼付固定於具有黏著性之切割膠帶的晶圓裂斷方法，於上述晶圓之裂斷之前，將具有黏著性之被覆膠帶貼付於該晶圓之與貼付有上述切割膠帶之面相反側之面，藉由上述被覆膠帶與上述切割膠帶自上下兩面夾住固定上述晶圓，接著，自上述劃線之上方按壓裂斷桿使晶圓撓曲，藉此，沿上述劃線將晶圓裂斷。 此處，上述切割膠帶以及被覆膠帶可保持於環狀之切割框架。In order to achieve the above-mentioned object, the following technical mechanism is sought in the present invention. That is, the rupture method of the present invention is a wafer rupture method in which a wafer processed with a scribe on one side is attached and fixed to an adhesive dicing tape. Before the above-mentioned wafer is ruptured, an adhesive coating is applied The tape is applied to the surface of the wafer opposite to the surface on which the dicing tape is applied, and the wafer is clamped and fixed from the upper and lower sides by the covering tape and the dicing tape, and then pressed from above the scribe line to break The rod flexes the wafer, thereby breaking the wafer along the scribe line. Here, the above-mentioned dicing tape and coating tape may be held in a ring-shaped dicing frame.

又，根據其他觀點之發明為一種晶圓之裂斷裝置，其特徵在於其係將單面加工有劃線之晶圓貼付固定於具有黏著性之切割膠帶的晶圓之裂斷裝置，且具備：被覆膠帶貼付部，其將具有黏著性之被覆膠帶貼付固定於上述晶圓之與貼付於上述切割膠帶之面相反側之面；及裂斷部，其自上述劃線之上方按壓裂斷桿使晶圓撓曲，藉此沿上述劃線將晶圓裂斷。 [發明之效果]In addition, the invention according to other viewpoints is a wafer breaking device characterized in that it is a wafer breaking device that attaches and fixes a single-sided scribed wafer to a wafer with adhesive dicing tape, and has : Covered tape attaching part, which attaches and fixes the adhesive covering tape to the surface of the wafer opposite to the surface attached to the dicing tape; and the fractured part, which presses the fracture rod from above the scribe line The wafer is flexed, thereby breaking the wafer along the scribe line. [Effects of Invention]

根據本發明，由於藉由具有黏著性之切割膠帶與被覆膠帶自上下兩面夾住而更穩定地固定保持晶圓，故可減少裂斷時產生「斜裂」或「缺口」等不良而獲得高品質之晶片。According to the present invention, the wafer is more stably fixed and held by sandwiching the adhesive dicing tape and the covering tape from the upper and lower sides, so that defects such as "oblique cracks" or "notches" during cracking can be reduced to obtain high Quality chips.

本發明中，可將被覆膠帶以圍繞晶圓之周圍之方式經由環狀接合部分接合於切割膠帶。 藉此，可於切割膠帶與被覆膠帶間如真空包裝般夾住晶圓而更穩定地固定保持。In the present invention, the covering tape can be bonded to the dicing tape via the ring-shaped bonding portion so as to surround the periphery of the wafer. Thereby, the wafer can be clamped between the dicing tape and the coating tape like a vacuum packaging, and the wafer can be fixed and held more stably.

以下，基於圖示之實施形態說明本發明之詳情。本發明之裂斷方法中，主要係將於玻璃或矽等脆性材料基板之表面或內部組入了電子電路或電子零件之MEMS(Micro Electro Mechanical Systems)用之晶圓，作為裂斷對象。此處，以成為母材之一片玻璃晶圓W，切出20000個左右1.25 mm見方之晶片之直徑200 mm、厚度0.8 mm之玻璃晶圓為實施對象。Hereinafter, the details of the present invention will be explained based on the illustrated embodiment. In the rupture method of the present invention, a wafer used for MEMS (Micro Electro Mechanical Systems) in which electronic circuits or electronic parts are integrated into the surface or inside of a brittle material substrate such as glass or silicon is used as the fracture target. Here, the glass wafer W, which becomes a base material, is cut into 20,000 pieces of about 1.25 mm square wafers with a diameter of 200 mm and a thickness of 0.8 mm.

玻璃晶圓W如圖1所示，安裝在於周緣部分由呈環狀之切割框架1所張設保持之切割膠帶2上。切割膠帶2以厚度90～120 μm，較佳為95 μm之聚氯乙烯或聚烯烴等可伸展之樹脂形成，其上表面形成於具有黏著性之接著面，且於該接著面接合有玻璃晶圓W。As shown in FIG. 1, the glass wafer W is mounted on the dicing tape 2 stretched and held by the ring-shaped dicing frame 1 at its periphery. The dicing tape 2 is formed of a stretchable resin such as polyvinyl chloride or polyolefin with a thickness of 90-120 μm, preferably 95 μm, and its upper surface is formed on an adhesive surface, and glass crystal is bonded to the adhesive surface Round W.

於玻璃晶圓W之上表面，於先行之劃線步驟中使用切割輪或雷射等，且格柵狀地加工相互正交之X方向(縱向)之劃線S1及Y方向(橫向)之劃線S2。由該縱、橫劃線S1、S2包圍之方格之各者為1.25 mm見方之晶片。一般係於將玻璃晶圓W安裝於切割膠帶2後實施劃線S1、S2之加工，但亦有於安裝前加工之情形。On the upper surface of the glass wafer W, a cutting wheel or a laser is used in the preceding scribing step, and the X-direction (longitudinal) scribing lines S1 and the Y-direction (horizontal) orthogonal to each other are processed in a grid shape. Underline S2. Each of the squares surrounded by the vertical and horizontal scribe lines S1 and S2 is a 1.25 mm square chip. Generally, the processing of scribing S1 and S2 is performed after the glass wafer W is mounted on the dicing tape 2, but it may also be processed before mounting.

本發明方法中，於玻璃晶圓W之開放之上表面，即加工有劃線S1、S2之上表面，貼付與上述切割膠帶2同樣之材質之具有黏著性之被覆膠帶3。被覆膠帶如圖2(a)所示，於周緣部被保持於切割框架1，且以包圍玻璃晶圓W之周圍之方式，以環狀之接合部3a與切割膠帶2接合。藉此，如真空包裝般將玻璃晶圓W夾於切割膠帶2與被覆膠帶3間穩定地予以固定。另，被覆膠帶3之厚度為70～90 μm，較佳為80 μm。 將上述被覆膠帶3貼付於玻璃晶圓W時，例如圖2(b)所示，可藉由將玻璃晶圓W載置於被覆膠帶貼付裝置A之台板7上，將被覆膠帶3以黏著面朝下地載置於其之上表面，並自其上方以按壓模具8輕輕按壓來進行。In the method of the present invention, on the open upper surface of the glass wafer W, that is, the upper surface with the scribe lines S1 and S2 processed, an adhesive covering tape 3 of the same material as the dicing tape 2 is attached. As shown in FIG. 2( a ), the coating tape is held by the dicing frame 1 at the peripheral edge portion, and is bonded to the dicing tape 2 by a ring-shaped bonding portion 3 a so as to surround the periphery of the glass wafer W. Thereby, the glass wafer W is sandwiched between the dicing tape 2 and the covering tape 3 like vacuum packaging, and is stably fixed. In addition, the thickness of the coated tape 3 is 70-90 μm, preferably 80 μm. When attaching the above-mentioned covering tape 3 to the glass wafer W, for example, as shown in FIG. 2(b), the glass wafer W can be placed on the platen 7 of the covering tape attaching device A to attach the covering tape 3 Place it face down on the upper surface, and lightly press it with the pressing mold 8 from above.

如此，將貼付有被覆膠帶3之玻璃晶圓W，以後續之裂斷裝置B沿劃線S1、S2分斷。具體而言，如圖3所示，以使加工有劃線S1之面，即被覆膠帶3成為下側之方式使玻璃晶圓W反轉，並以使劃線S1位於裂斷裝置B之設置於載台4之中間之左右一對承托刃5、5間之方式，載置於載台4。 接著，藉由自上方朝劃線S1按壓前端較細之裂斷桿6，而使基板W於承托刃5、5間因三點支持彎曲方式而撓曲，且先沿X方向之劃線S1裂斷並分斷成長條狀之基板。接著，使載台4旋轉90度，藉由與上述同樣之方法於Y方向之劃線S2進行裂斷，而分斷成1.25 mm見方之晶片。另，由於上述之承托刃與裂斷桿之3點支持彎曲方式之裂斷方法係眾所周知，故此處省略裂斷桿升降機構等之詳細說明。In this way, the glass wafer W attached with the covering tape 3 is broken along the scribe lines S1 and S2 by the subsequent breaking device B. Specifically, as shown in FIG. 3, the glass wafer W is reversed so that the surface on which the scribe line S1 is processed, that is, the coating tape 3 becomes the lower side, and the scribe line S1 is positioned on the cleaving device B. A pair of left and right supporting blades 5 and 5 in the middle of the carrier 4 are placed on the carrier 4. Then, by pressing the rupture rod 6 with a thinner tip toward the scribe line S1 from above, the substrate W is bent between the supporting blades 5 and 5 due to the three-point support bending method, and the scribe line is first along the X direction S1 cracks and breaks the long strip substrate. Next, the stage 4 is rotated 90 degrees, and the scribe line S2 in the Y direction is broken by the same method as described above, and the wafer is broken into a 1.25 mm square wafer. In addition, since the three-point support bending method of the supporting blade and the breaking rod described above is well known, the detailed description of the breaking rod lifting mechanism and the like are omitted here.

於該裂斷時，玻璃晶圓W藉由具有黏著性之切割膠帶2與被覆膠帶3自上下兩面被保持，且將被覆膠帶3於玻璃晶圓W之周片部分經由環狀接合部分3a接合於切割膠帶2，藉此，如真空包裝般將玻璃晶圓W夾於切割膠帶2與被覆膠帶3間穩定地予以固定，因此，即便切出之晶片為1.25 mm見方之小尺寸，亦可將厚度為0.8 mm之基板沿劃線精度良好地分斷。 尤其，將沿X方向劃線S1分斷玻璃晶圓W後之長條狀之基板沿Y方向劃線S2裂斷時，先前，因長條狀基板之沿X方向之左右兩邊被切離，基板不穩定，而多產生「斜裂」或「缺口」等不良，但本發明方法中，藉由穩定之固持保持，可抑制產生如上所述之不良而獲得高品質之晶片。At the time of the fracture, the glass wafer W is held from the upper and lower sides by the adhesive dicing tape 2 and the covering tape 3, and the covering tape 3 is bonded to the peripheral part of the glass wafer W via the ring-shaped bonding portion 3a In the dicing tape 2, by this, the glass wafer W is sandwiched between the dicing tape 2 and the coating tape 3 like a vacuum package to be stably fixed. Therefore, even if the cut chip is a small size of 1.25 mm square, A substrate with a thickness of 0.8 mm can be accurately broken along the scribing line. In particular, when the long substrate after the glass wafer W is cut along the X-direction scribe line S1 is split along the Y-direction scribe line S2, previously, the left and right sides of the long substrate in the X direction were cut away. The substrate is unstable, and defects such as "oblique cracks" or "notches" are often generated. However, in the method of the present invention, through stable holding, the occurrence of such defects can be suppressed and high-quality chips can be obtained.

分斷後，除去被覆膠帶3後，拉伸切割膠帶2，藉此於各晶片間產生間隙而自切割膠帶2拾取晶片。After severing, after removing the covering tape 3, the dicing tape 2 is stretched, thereby creating a gap between the wafers and picking up the wafers from the dicing tape 2.

上述實施例中，雖將玻璃晶圓W之加工有劃線之面朝向被覆膠帶3而構成，但亦可如圖4所示，於將玻璃晶圓W貼付於切割膠帶2前，預先加工劃線S1、S2，將加工有該劃線S1、S2之面朝下側地貼付於切割膠帶2，並於相反側之面貼付被覆膠帶3。於該情形時，無須如上述之實施例所示使玻璃晶圓W反轉，而可姿勢不變地藉由裂斷桿6裂斷。In the above embodiment, although the scribed surface of the glass wafer W is configured to face the coating tape 3, as shown in FIG. 4, the glass wafer W may be preprocessed and scribed before attaching the glass wafer W to the dicing tape 2. The lines S1 and S2 are applied to the dicing tape 2 with the surface processed with the scribe lines S1 and S2 facing down, and the covering tape 3 is applied to the opposite surface. In this case, it is not necessary to reverse the glass wafer W as shown in the above-mentioned embodiment, and it can be broken by the breaking rod 6 without changing its posture.

作為藉由本發明方法分斷之晶片尺寸，上述實施例中顯示厚度為0.8 mm且1.25 mm見方之情形，但其之數值無限定。又，若晶圓之厚度較薄，則可與其成比例地將基板裂斷成更小之尺寸。 再者，分斷之晶片之形狀不限定於方形，當然亦可為矩形狀。 又，關係到(與微細孔加工之縱橫比(深度Z/孔徑D)同樣之)加工難度之Y/Z比(基板厚度(Z方向)、與切出為長條狀基板後裂斷之側即Y方向之長度之比)於1.5/1～3/1之範圍內選擇。一般而言，該Y/Z比為3以下，則加工之難度增加，先前之基板固定方法(單面以黏著性膠帶貼付固定，僅單面為保護膜)中，斜裂多發，加工品質變差，但藉由採用本發明方法，即便為3以下，亦可大幅減少斜裂，可提高加工品質。As the size of the chip to be broken by the method of the present invention, the above embodiment shows the case where the thickness is 0.8 mm and the square is 1.25 mm, but the value is not limited. Moreover, if the thickness of the wafer is thinner, the substrate can be broken into smaller sizes in proportion to it. Furthermore, the shape of the broken chip is not limited to a square shape, of course, it may be a rectangular shape. In addition, the Y/Z ratio (substrate thickness (Z direction), which is related to the processing difficulty (the same as the aspect ratio (depth Z/aperture D) of micro-hole processing), and the side where the substrate is broken after being cut into a long strip That is, the length ratio in the Y direction) is selected in the range of 1.5/1 to 3/1. Generally speaking, if the Y/Z ratio is less than 3, the difficulty of processing increases. In the previous substrate fixing method (fixed with adhesive tape on one side, only one side is a protective film), diagonal cracks occur frequently, and the processing quality changes Poor, but by using the method of the present invention, even if it is 3 or less, diagonal cracks can be greatly reduced, and the processing quality can be improved.

以上，已對本發明之代表性實施例進行說明，但本發明並非特定於上述實施形態者。例如，上述實施形態中，以切割框架1保持切割膠帶2以及被覆膠帶3，亦可代替切割框架而以配置於載台附近之夾具等保持機構夾住保持。 又，上述實施例中，以利用左右一對之承托刃與裂斷桿(亦稱為裂斷板)之3點支持彎曲方式使基板撓曲而裂斷，亦可代替承托刃，將緩衝材配置於基板下方並按壓裂斷桿，藉此使基板撓曲。又可代替玻璃晶圓而為矽晶圓。 此外，本發明中，可於不脫離申請專利範圍之範圍內適當修正、變更並達成該目的。 [產業上之可利用性]The representative embodiments of the present invention have been described above, but the present invention is not specific to the above-mentioned embodiments. For example, in the above-mentioned embodiment, the dicing frame 1 holds the dicing tape 2 and the coating tape 3, and instead of the dicing frame, it may be clamped and held by a holding mechanism such as a clamp arranged near the stage. In addition, in the above-mentioned embodiment, the three-point supporting bending method of the left and right supporting blades and the rupture rod (also called the rupture plate) is used to flex and break the substrate, which can also replace the supporting blade. The buffer material is arranged under the substrate and presses the breaking rod, thereby bending the substrate. It can also replace glass wafers as silicon wafers. In addition, in the present invention, it is possible to appropriately modify and change within the scope of the patent application to achieve the object. [Industrial availability]

本發明之方法用於以裂斷桿將貼付於切割膠帶之晶圓裂斷。The method of the present invention is used for cracking the wafer attached to the dicing tape with the cracking rod.

1:切割框架 2:切割膠帶 3:被覆膠帶 3a:接合部 4:載台 5:承托刃 6:裂斷桿 7:台板 8:按壓模具 A:被覆膠帶貼付裝置 B:裂斷裝置 S1:X方向之劃線 S2:X方向之劃線 W:晶圓 X:方向 Y:方向 Z:方向1: cutting frame 2: cutting tape 3: Coated tape 3a: Joint 4: carrier 5: supporting blade 6: Cracked rod 7: Platen 8: Press the mold A: Coated tape attaching device B: Breaking device S1: Scribe in X direction S2: Scribe in X direction W: Wafer X: direction Y: direction Z: direction

圖1係顯示將本發明之加工對象物之晶圓安裝於切割膠帶之狀態之立體圖。 圖2(a)係顯示將被覆膠帶安裝於上述晶圓之開放之上表面之狀態的剖視圖，圖2(b)係顯示被覆膠帶貼付機構之一例之剖視圖。 圖3係顯示本發明之裂斷機構之剖視圖。 圖4係顯示本發明之其他裂斷機構之剖視圖。Fig. 1 is a perspective view showing a state where the wafer of the object to be processed of the present invention is mounted on a dicing tape. Fig. 2(a) is a cross-sectional view showing a state in which a coating tape is mounted on the open upper surface of the wafer, and Fig. 2(b) is a cross-sectional view showing an example of a coating tape attaching mechanism. Figure 3 is a cross-sectional view showing the breaking mechanism of the present invention. Figure 4 is a cross-sectional view showing another breaking mechanism of the present invention.

1:切割框架 1: cutting frame

2:切割膠帶 2: cutting tape

3:被覆膠帶 3: Coated tape

4:載台 4: carrier

5:承托刃 5: supporting blade

6:裂斷桿 6: Cracked rod

B:裂斷裝置 B: Breaking device

S1:X方向之劃線 S1: Scribe in X direction

W:晶圓 W: Wafer

Claims (6)

一種晶圓裂斷方法，其係將單面加工有劃線之晶圓，貼付固定於具有黏著性之切割膠帶的晶圓裂斷方法； 於上述晶圓之裂斷之前，將具有黏著性之被覆膠帶，貼付於該晶圓之與貼付有上述切割膠帶之面為相反側之面，藉由上述被覆膠帶與上述切割膠帶自上下兩面夾住固定上述晶圓； 接著，自上述劃線之上方按壓裂斷桿使晶圓撓曲，藉此沿上述劃線將晶圓裂斷。A wafer cracking method, which is a wafer cracking method in which a scribed wafer processed on one side is attached and fixed on an adhesive dicing tape; Before the wafer is cracked, an adhesive coating tape is attached to the wafer on the opposite side to the surface on which the dicing tape is attached, and the coating tape and the dicing tape are sandwiched from the top and bottom. Fixed the above wafer; Then, the breaking rod is pressed from above the scribe line to bend the wafer, thereby breaking the wafer along the scribe line. 如請求項1之晶圓之裂斷方法，其中上述被覆膠帶以包圍上述晶圓之周圍之方式，經由環狀之接合部分與上述切割膠帶接合。The method for rupturing a wafer according to claim 1, wherein the covering tape is bonded to the dicing tape via a ring-shaped bonding portion in a manner to surround the periphery of the wafer. 如請求項1之晶圓之裂斷方法，其中上述切割膠帶與被覆膠帶被保持於環狀之切割框架。Such as claim 1, wherein the dicing tape and the coating tape are held in a ring-shaped dicing frame. 如請求項2之晶圓之裂斷方法，其中上述切割膠帶與被覆膠帶被保持於環狀之切割框架。The method for rupturing a wafer according to claim 2, wherein the dicing tape and the coating tape are held in a ring-shaped dicing frame. 如請求項1至4中任一項之晶圓之裂斷方法，其中上述被覆膠帶貼付於晶圓之形成有上述劃線之面。The method for cracking a wafer according to any one of claims 1 to 4, wherein the coating tape is attached to the surface of the wafer where the scribe line is formed. 一種晶圓裂斷裝置，其係將單面加工有劃線之晶圓，貼付固定於具有黏著性之切割膠帶的晶圓之裂斷裝置；且包含： 被覆膠帶貼付部，其將具有黏著性之被覆膠帶，貼付固定於上述晶圓之與貼付於上述切割膠帶之面為相反側之面；及 裂斷部，其自上述劃線之上方按壓裂斷桿使晶圓撓曲，藉此沿上述劃線將晶圓裂斷。A wafer cracking device, which is a wafer cracking device that attaches and fixes a wafer with a dicing tape with adhesive to a wafer processed with a scribe on one side; and includes: The covering tape attaching part, which attaches the adhesive covering tape to the above-mentioned wafer and the surface attached to the above-mentioned dicing tape on the opposite side; and The cracking part presses the cracking rod from above the scribe line to deflect the wafer, thereby breaking the wafer along the scribe line.
TW109104168A 2019-04-26 2020-02-11 Wafer Breaking Method TWI842825B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019085341A JP7340838B2 (en) 2019-04-26 2019-04-26 Wafer breaking method and breaking device
JP2019-085341 2019-04-26

Publications (2)

Publication Number Publication Date
TW202040661A true TW202040661A (en) 2020-11-01
TWI842825B TWI842825B (en) 2024-05-21

Family

ID=

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115863226A (en) * 2023-02-28 2023-03-28 天津伍嘉联创科技发展股份有限公司 Folding machine capable of automatically breaking wafer for inspection and transferring

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115863226A (en) * 2023-02-28 2023-03-28 天津伍嘉联创科技发展股份有限公司 Folding machine capable of automatically breaking wafer for inspection and transferring

Also Published As

Publication number Publication date
CN111863612A (en) 2020-10-30
JP2020181931A (en) 2020-11-05
KR20200125444A (en) 2020-11-04
JP7340838B2 (en) 2023-09-08

Similar Documents

Publication Publication Date Title
JP6039363B2 (en) Method and apparatus for dividing brittle material substrate
JP5037138B2 (en) Work breaking method and device, scribing and breaking method, and scribing device with break function
TWI429604B (en) Method for breaking the brittle material substrate
TWI529790B (en) Breaking device
TWI650292B (en) Breaking method of brittle material substrate and breaking device
TWI620635B (en) Elastic support plate, breaking device and breaking method
TWI620634B (en) Expander, breaking device and breaking method
JP2011060985A (en) Method of manufacturing electronic component
KR20150044367A (en) Breaking apparatus and dividing method
TW201607715A (en) Breaking method and device of brittle material substrate
TW201603980A (en) Method and device to break laminated substrate
JP7340838B2 (en) Wafer breaking method and breaking device
CN110476224B (en) Method for manufacturing semiconductor
TW201417155A (en) Breaking jig and breaking method for brittle material substrates
TW201820440A (en) Breaking method and breaking device for brittle material substrate can retain the brittle material substrate on the flexible support board so that it can be closely attached to the flexible support board by pressing the roller
JP3461449B2 (en) Method for manufacturing semiconductor device
TWI842825B (en) Wafer Breaking Method
JP2012104644A (en) Wafer cutting method and wafer cutting device
JP6290010B2 (en) Wafer dividing method
TW201604156A (en) Laminate substrate dividing method and dividing device
JP5451720B2 (en) Substrate break method
JP5913483B2 (en) Method and apparatus for dividing brittle material substrate
JP7308549B2 (en) Processing method of bonded substrate
CN112809947B (en) Method for dividing bonded substrate and method for dividing stress substrate
CN110176396B (en) Cutting device, cutting method and cutting plate